KR100829925B1 - Apparatus and method for processing substrate - Google Patents

Abstract

A substrate processing apparatus and method is provided to increase the process uniformity of a wafer by supplying sufficient amounts of source gas and plasma onto an edge of the wafer. A process chamber(100) provides an internal space for processing a substrate. A support member(200) is installed in the process chamber to support the substrate. A shower head(400) is positioned over the support member to supply a source gas onto the support member. A plasma generating member generates a plasma using the source gas supplied from the shower head. The shower head has a spray plate(420) having plural spray holes spraying the source gas, and plural spray nozzles(424) protruding from the spray plate towards the substrate.

Description

Apparatus and method for processing substrate

1A and 1B are cross-sectional views of a wafer showing a gap formed between metal lines.

2 is a schematic view showing a semiconductor manufacturing apparatus including a substrate processing apparatus according to the present invention.

3 is a diagram schematically illustrating the substrate processing apparatus of FIG. 2.

4 and 5 are views schematically showing the support member of FIG.

6 is a perspective view schematically illustrating the support member of FIG. 3.

FIG. 7 is a cross-sectional view taken along the line II ′ of FIG. 5.

8 is a perspective view illustrating the jet plate and the jet nozzle of FIG. 3.

9 is a view showing the distance between the jet plate and the jet nozzle and the wafer placed on the support plate, respectively.

10 is a flowchart illustrating a substrate processing method according to the present invention.

11 is a view illustrating a state in which the substrate processing apparatus of FIG.

<Description of Symbols for Main Parts of Drawings>

1: semiconductor manufacturing equipment 10: substrate processing apparatus (process chamber)

100: process chamber 200: support member

220: support plate 240: drive shaft

300: upper electrode 400: shower head

420: jet plate 424: jet nozzle

The present invention relates to an apparatus and method for processing a substrate, and more particularly, to an apparatus and method for processing a substrate using plasma.

The semiconductor device has many layers on a silicon substrate, and these layers are deposited on the substrate through a deposition process. This deposition process has several important issues, which are important in evaluating the deposited films and selecting the deposition method.

The first is the 'qulity' of the deposited film. This means composition, contamination levels, defect density, and mechanical and electrical properties. The composition of the films can vary depending on the deposition conditions, which is very important for obtaining a specific composition.

The second is uniform thickness across the wafer. In particular, the thickness of the film deposited on the nonplanar pattern on which the step is formed is very important. Whether the thickness of the deposited film is uniform may be determined through step coverage defined by dividing the minimum thickness deposited on the stepped portion by the thickness deposited on the upper surface of the pattern.

Another issue with deposition is filling space. This includes gap filling between the metal lines with an insulating film including an oxide film. The gap is provided to physically and electrically insulate the metal lines.

1A and 1B are cross-sectional views of a wafer showing a gap formed between metal lines a. 1A and 1B show an incomplete gap filling process. The gap between the metal lines a is filled with the insulating film b. At this time, while the insulating film b is filled in the gap, an overhang h grows in the form of breadloafing in the upper portion of the gap, and the growth rate of the overhang h is an insulating film filled in the gap. It is faster than the growth rate of b). As a result, the overhangs h meet with each other to close the top of the gap to form voids in the gap, preventing the insulating film b from being deposited in the gap. The formed voids result in high contact resistance and high sheet resistance, and also cause breakage. In addition, the voids may contain a treatment liquid or water, causing stability problems.

The High-Density Plasma Chemical Vapor Deposition (HDPCVD) method uses a deposition / etching / deposition method that deposits a film in a gap using plasma, etches overhang grown during deposition of the film, and then deposits the film again. To prevent the formation of voids. That is, the partially filled gap is reshaped to open the gap, and a film is deposited in the gap before voids are formed in the gap. This method can deposit a film without voids in a gap having a large Aspect Ratio (AR).

However, such a conventional substrate processing apparatus did not take into account uniformity problems, so that the resulting plasma was unevenly supplied on the wafer, and the thickness of the film deposited on the wafer was not uniform. In particular, since the source gas and the plasma generated from the source gas were not sufficiently supplied to the edge of the wafer W, the process for the edge of the wafer W was not sufficiently performed compared to the center of the wafer W. .

As previously seen, uniformity is one of the important issues associated with the deposition process, and non-uniform films resulted in high electrical resistance on the metal line and increased the probability of mechanical failure.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a method and apparatus for processing a substrate that can increase the process uniformity with respect to the entire surface of the wafer.

Another object of the present invention is to provide a method and apparatus for processing a substrate capable of depositing a film of uniform thickness on a wafer.

Another object of the present invention is to provide a method and apparatus for processing a substrate that can improve the performance of a semiconductor device.

Still other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

According to an embodiment of the present invention, a process chamber providing an internal space in which a process is performed on a substrate, a support member installed in the process chamber and supporting the substrate, and positioned on an upper portion of the support member, Shower head for supplying a source gas toward the head, and a plasma generating member for generating a plasma from the source gas supplied from the shower head, wherein the shower head is a spray plate formed with a plurality of injection holes for injecting the source gas, the It includes a plurality of injection nozzles coupled to the edge portion of the injection plate to protrude toward the substrate from the injection plate for injecting the source gas.

The plurality of injection holes may include center injection holes formed in the center portion of the injection plate and edge injection holes formed in the edge portion of the injection plate, and the edge injection holes may be in communication with the injection nozzles, respectively.

The shower head may further include a fixing holder holding the jet plate and a support shaft connected to an upper portion of the fixing holder.

The plasma generating member may include an upper electrode disposed on an upper portion of the support member and a lower electrode disposed to face the upper electrode, wherein the upper electrode may be coupled to the fixed holder to be parallel to the jet plate.

According to the present invention, a method of treating a substrate using plasma includes placing the substrate on a supporting member installed in the process chamber, supplying a source gas toward the substrate in the process chamber, and supplying the source gas. Generating the plasma from the substrate; and treating the substrate using the plasma, wherein supplying source gas toward the substrate comprises: a plurality of jet plates disposed side by side with the substrate on top of the substrate; And supplying the source gas by using injection holes of the plurality of injection nozzles and a plurality of injection nozzles coupled to the edge portion of the injection plate.

The injection nozzles may protrude from the injection plate toward the substrate, and lower ends of the injection nozzles may be closer to the substrate than lower ends of the injection holes.

Hereinafter, exemplary embodiments of the present invention will be described in more detail with reference to FIGS. 2 to 11. Embodiment of the present invention may be modified in various forms, the scope of the present invention should not be construed as limited to the embodiments described below. This embodiment is provided to explain in detail the present invention to those skilled in the art. Accordingly, the shape of each element shown in the drawings may be exaggerated to emphasize a more clear description.

Hereinafter, the wafer W will be described as an example of the substrate, but the present invention is not limited thereto. In addition, hereinafter, a semiconductor manufacturing apparatus 1 having a substrate processing apparatus (or process chamber) 10 performing a deposition process will be described as an example. However, the spirit and scope of the present invention is not limited thereto, and the present invention may be applied to an ashing process, an etching process, or a cleaning process. In addition, hereinafter, a capacitively coupled plasma (CCP) type plasma apparatus has been described as an example, but an inductively coupled plasma (ICP) type or an electron cyclotron resonance (ECR) type is described. It can be applied to various plasma devices including.

2 is a diagram schematically showing a semiconductor manufacturing facility 1 including a substrate processing apparatus 10 according to the present invention.

Referring to FIG. 2, the semiconductor manufacturing facility 1 includes a process facility 2, an Equipment Front End Module (EFEM) 3, and an interface wall 4. The plant front end module 3 is mounted in front of the process plant 2 to transfer the wafer W between the vessel (not shown) in which the wafers W are housed and the process plant 2. The facility front end module 3 has a plurality of loadports 60 and a frame 50. The frame 50 is located between the load port 60 and the process equipment 2. The container containing the wafer W is placed on the load port 60 by a transfer means (not shown), such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle. Is put on. The container may be a closed container such as a front open unified pod (FOUP). In the frame 50, a frame robot 70 for transferring the wafer W is installed between the vessel placed in the load port 60 and the process facility 2. In the frame 50, a door opener (not shown) for automatically opening and closing the door of the container may be installed. In addition, the frame 50 may be provided with a fan filter unit (FFU) (not shown) for supplying clean air into the frame 50 so that clean air flows from the top to the bottom in the frame 50. .

The wafer W is subjected to a predetermined process in the process facility 20. The process facility 2 has a loadlock chamber 20, a transfer chamber 30, and a process chamber 10. The transfer chamber 30 has a generally polygonal shape when viewed from the top. The load lock chamber 20 or the process chamber 10 is located at the side of the transfer chamber 30. The loadlock chamber 20 is located on the side adjacent to the facility front end module 3 of the sides of the transfer chamber 30, and the process chamber 10 is located on the other side. The load lock chamber 20 includes a loading chamber 20a in which the wafers W flowing into the process facility 2 temporarily stay in order to proceed with the process, and wafers W exiting the process facility 2 after the process is completed. ) Has an unloading chamber 20b that temporarily stays. The interior of the transfer chamber 30 and the process chamber 10 is maintained at a vacuum, and the interior of the load lock chamber 20 is converted to a vacuum and atmospheric pressure. The load lock chamber 20 prevents foreign contaminants from entering the transfer chamber 30 and the process chamber 10. A gate valve (not shown) is installed between the load lock chamber 20 and the transfer chamber 30 and between the load lock chamber 20 and the facility front end module 3. When the wafer W moves between the facility front end module 3 and the load lock chamber 20, the gate valve provided between the load lock chamber 20 and the transfer chamber 30 is closed and the load lock chamber 20 is closed. When the wafer W is moved between the transfer chamber 30 and the transfer chamber 30, the gate valve provided between the load lock chamber 20 and the facility front end module 3 is closed.

The transfer robot 40 is mounted in the transfer chamber 30. The transfer robot 40 loads the wafer W into the process chamber 10 or unloads the wafer W from the process chamber 10. In addition, the transfer robot 40 transfers the wafer W between the process chamber 10 and the load lock chamber 20.

The process chamber 10 performs a process such as deposition or etching on the wafer W. Hereinafter, the process chamber 10 will be referred to as a substrate processing apparatus 10. Detailed description of the substrate processing apparatus 10 will be described later.

3 is a front view schematically showing a substrate processing apparatus 10 according to the present invention. As shown in FIG. 3, the substrate processing apparatus 10 for performing a process on the wafer W includes a process chamber 100.

In the present embodiment, the process performed using the substrate processing apparatus 10 is a deposition process, and hereinafter, a high density plasma chemical vapor deposition (HDPCVD) process will be described as an example. As previously seen, the high density plasma chemical vapor deposition process involves the deposition process of depositing a film in a gap formed between metal lines by forming a plasma of high density, and etching etching overhangs on the gap. etching) process. Overhangs growing at the top of the gap close the inlet of the gap to form voids in the gap. Thus, by removing overhangs through the etching process, voids are prevented from forming in the gap.

The support member 200 for supporting the wafer W is installed in the internal space of the process chamber 100. The support member 200 may use an electrostatic chuck (ESC) that can fix the wafer (W) using electrostatic force, and selectively absorb the wafer (W) by a mechanical chuck or a vacuum that can be clamped through a mechanical structure. A vacuum chuck can be used. On the other hand, the biasing power may be applied to the support member 200 to guide the source gas in the plasma state to the wafer (W).

The support member 200 for supporting the wafer W is installed in the internal space of the process chamber 100. The support member 200 may use an electrostatic chuck (ESC) that can fix the wafer (W) using electrostatic force, and selectively absorb the wafer (W) by a mechanical chuck or a vacuum that can be clamped through a mechanical structure. A vacuum chuck can be used. On the other hand, the biasing power may be applied to the support member 200 to guide the source gas in the plasma state to the wafer (W).

4 and 5 are views schematically showing the support member 200 of FIG. 6 is a perspective view schematically illustrating the support member of FIG. 3, and FIG. 7 is a cross-sectional view taken along the line II ′ of FIG. 5.

As shown in FIGS. 4 and 5, the support member 200 includes a support plate 220, a drive shaft 240, a driver 260, and a controller 280.

The wafer W is placed side by side with the support plate 220 on the support plate 220. The support plate 220 is made of aluminum, so that the pattern formed on the wafer W may react with the support plate 220. Accordingly, the protective layer 221 of a ceramic material may be formed on the upper surface of the support plate 220, and the ceramic material may include aluminum oxide (Al ₂ O ₃ ).

One end of the drive shaft 240 is connected to the lower portion of the support plate 220, and the other end of the drive shaft 240 is connected to the driver 260. The driver 260 is a rotating device including a motor, and generates a rotating force by a current applied from the outside. The generated rotation force is transmitted to the drive shaft 240, the drive shaft 240 rotates together with the support plate 220.

A sealing member 241 is provided between the drive shaft 240 and the bottom wall of the process chamber 100. The sealing member 241 maintains the airtightness inside the process chamber 100 and at the same time helps the rotation of the drive shaft 240. The sealing member 241 includes a magnetic seal.

The driver 260 is connected to the controller 280, which controls the operation of the driver 260. The controller 280 may control all operations of the driver 260 including the rotation speed, the rotation amount, and the rotation direction of the driver 260.

As shown in FIG. 5, the first cooling line through which the cooling gas flows and the second cooling line through which the cooling fluid flows are formed in the support plate 220.

The first cooling line supplies a cooling gas to the rear surface of the wafer W placed on the support plate 220, and the wafer W is cooled to a predetermined temperature by the cooling gas. High temperature heat is generated during the process, and particularly high temperature heat is generated in the etching process by sputtering during the high density plasma chemical vapor deposition process. As a result, the temperature of the wafer W may increase, and the first cooling line cools the wafer W using a cooling gas.

The first cooling line includes a cooling gas flow path 222, a distribution line 224, and a plurality of branch lines 226. As shown in FIG. 7, the cooling gas flow path 222 is formed at the center of the support plate 220, and the lower end of the cooling gas flow path 222 is formed of the cooling gas flow path 242 formed at the center of the driving shaft 240. Connected to the top. The distribution line 224 extends in the radial direction of the support plate 220 from the cooling gas flow path 222. The branch lines 226 branch from the distribution line 224 and extend toward the upper portion of the support plate 220, and are connected to the plurality of ejection openings 228 formed on the protective layer 221, respectively.

A lower end of the cooling gas flow path 242 formed at the center of the drive shaft 240 is connected to the cooling gas line 244, and the cooling gas supplied to the rear surface of the wafer W flows in the cooling gas line 244. The cooling gas contains an inert gas, and the inert gas contains helium (He).

The cooling gas supplied to the cooling gas passage 242 through the cooling gas line 244 is supplied to each branch line 226 through the cooling gas passage 222 and the distribution line 224, and the supplied cooling gas is It is supplied to the back surface of the wafer W through the jet holes 228.

As shown in FIG. 6, the plurality of support protrusions 229 are provided on the protective layer 221. The plurality of support protrusions 229 are disposed at equal intervals in four directions with respect to the center and the center of the support plate 220, and support the rear surface of the wafer W placed on the support plate 220.

Accordingly, the wafer W is supported by the plurality of support protrusions 229 to be kept at a predetermined distance from the upper surface of the protective layer 221, and the wafer W is supported by the cooling gas supplied to the rear surface. Controlled to a constant temperature.

The second cooling line 232 is located below the distribution line 224, and as shown in FIG. 7, the second cooling line 232 is spirally arranged to surround the cooling gas flow path 222. The second cooling line 232 cools the temperature of the support plate 220 to a predetermined temperature. As mentioned above, the temperature of the support plate 220 may increase due to the high temperature heat generated in the deposition process, particularly the high density plasma chemical vapor deposition process. Therefore, the support plate 220 is cooled using the second cooling line 232.

As shown in FIG. 5, one end of the second cooling line 232 is connected to the cooling fluid supply line 234, and the other end of the second cooling line 232 is connected to the cooling fluid recovery line 236. The cooling fluid supply line 234 is opened and closed by a valve 234a installed on the cooling fluid supply line 234. Cooling fluid flows in the cooling fluid supply line 234, and supplies cooling fluid to the second cooling line 232. The cooling fluid supplied through the cooling fluid supply line 234 cools the support plate 220 to a predetermined temperature while moving to the end to which the cooling fluid recovery line 236 is connected along the second cooling line 232. Thereafter, the cooling fluid is recovered through the cooling fluid recovery line 236, and the recovered cooling fluid is cooled to a predetermined temperature through a chiller (not shown) and then supplied to the cooling fluid supply line 234 again. Can be.

The sidewall of the process chamber 100 is formed with a passage 122 through which the wafer W can enter. The wafer W enters into the process chamber 100 through the passage 122 or exits to the outside of the process chamber 100.

On the passage 122, a door 130 for opening and closing the passage 122 is installed. The door 130 is connected to the driver 132 and opens and closes the passage 122 while moving in a direction substantially perpendicular to the longitudinal direction of the passage 122 by the operation of the driver 132.

A plurality of exhaust holes 102 are formed in the bottom wall of the process chamber 100, and exhaust lines 104 are connected to the exhaust holes 102, respectively. A pump (not shown) may be installed on the exhaust line 104. The exhaust lines 104 serve as a passage for discharging the gas inside the process chamber 100 to the outside. The reaction gas, the unreacted gas, and the reaction by-product generated in the process chamber 100 are discharged to the outside of the process chamber 100 through the exhaust lines 104, and the pressure inside the process chamber 100 is discharged. In order to maintain the vacuum state, the gas inside the process chamber 100 may be discharged to the outside through the exhaust lines 104.

In the upper portion of the process chamber 100, a gas supply member 400 is provided to supply a source gas into the process chamber 100 so as to perform a deposition or etching process. The gas supply member 400 includes a shower head, a support shaft 460 for supporting the shower head, and a gas supply line 460.

The shower head sprays the source gas toward the wafer W placed on the support plate 220. The shower head includes a spray plate 420 having a plurality of spray holes 422, a plurality of spray nozzles 424 coupled to an edge of the spray plate 420, and a fixing holder fixing the spray plate 420 ( 440). The fixed holder 440 has a shape in which the lower part is open, and the injection plate 420 is fixed to the lower part. A buffer space 426 is formed between the fixed holder 440 and the jet plate 420. The support shaft 460 is connected to the upper surface of the fixed holder 440.

A gas supply line 460 is connected to one end of the support shaft 460, and a source gas flows inside the gas supply line 460. The gas supply line 460 is opened and closed by the valve 660a. The source gas is a silicon-containing gas comprising silane (SiH ₄ ) and an oxygen-containing gas comprising oxygen (O ₂ ).

FIG. 8 is a perspective view illustrating the jet plate 420 and the jet nozzle 424 of FIG. 3, and FIG. 9 is between the jet plate 420 and the jet nozzle 424 and the wafer W placed on the support plate 220. It is a figure which shows the distance of each.

As shown in FIG. 8, the jet plate 420 generally has a disk shape corresponding to the wafer W, and the jet plate 420 is provided with a plurality of jet holes 422.

A plurality of jetting nozzles 424 are connected to the edge of the jetting plate 420. As shown in FIG. 9, the spray nozzle 424 is connected to the bottom surface of the spray plate 420 and protrudes toward the support plate 220 positioned under the spray plate 420. An internal flow path 424a is formed inside the injection nozzle, and the internal flow path 424a communicates with the injection hole 422 to which the injection nozzle 424 is connected. Therefore, the source gas introduced through the gas supply line 460 flows into the buffer space 426 through the internal flow path of the support shaft 460, and the injection holes 422 and the injection nozzles formed in the injection plate 420. It is discharged to the outside through 424.

As described above, the spray nozzle 424 connected to the edge of the spray plate 420 protrudes toward the support plate 220. Accordingly, the lower end of the injection nozzle 424 is closer to the support plate 220 than the lower end of the injection port 422. That is, as shown in FIG. 9, the distance d _e from the lower end of the injection nozzle 424 to the upper surface of the wafer W is the distance from the lower end of the injection port 422 to the upper surface of the wafer W. As shown in FIG. is less than (d _c ).

As shown in FIG. 9, the source gas supplied through the gas supply line 460 flows into the buffer space 426 through an internal flow path of the support shaft 460. Thereafter, the source gas is injected toward the center of the wafer W through the injection holes 422 formed in the injection plate 420, and is injected toward the edge portion of the wafer W through the injection nozzle 424. At this time, as described above, since the lower end of the injection nozzle 424 is closer to the support plate 220 than the lower end of the injection hole 422, the source gas injected from the injection nozzle 424 is the edge of the wafer (W) Can be focused on. Therefore, the injection nozzle 424 can supply a sufficient amount of source gas to the edge of the wafer W, thereby supplying a sufficient amount of plasma to the edge of the wafer W.

On the other hand, the source gas supplied into the process chamber 100 is discharged by the upper electrode 300, the plasma is generated by the discharge. The upper electrode 300 is installed inside the fixed holder 440. The upper electrode 300 is disposed to be parallel to the jet plate 420 and is disposed above the buffer space 426. An RF power is connected to the upper electrode 300, and the upper electrode 300 becomes a capacitively coupled plasma (CCP) source. On the other hand, as shown in Figure 3, the support plate 220 is grounded, and serves as a lower electrode corresponding to the upper electrode 300. Therefore, when a high frequency power is applied to the upper electrode 300, an electromagnetic field is formed between the upper electrode 300 and the support plate 220, and the source gas inside the process chamber 100 is discharged by the electromagnetic field.

10 is a flowchart illustrating a substrate processing method according to the present invention, and FIG. 11 is a view illustrating a state in which the substrate processing apparatus 10 of FIG. 3 operates. Hereinafter, a substrate treating method according to the present invention will be described with reference to FIGS. 10 and 11.

First, the wafer W is loaded on the support member 200 in the process chamber 100 (S10). When the door 130 is opened by the driver 132, the wafer W is introduced into the process chamber 100 through the passage 122 and placed on the support protrusion 229 on the support member 200. Lose. As described above, the wafer W may be fixed on the support plate 220 by electrostatic force.

Next, plasma is generated in the process chamber 100 (S20). Specific methods for generating plasma are as follows. First, the source gas is supplied to the upper portion of the wafer W by using the gas supply member 400. Source gas flowing in the gas supply line 460 is supplied to the upper portion of the wafer W through the interior of the support shaft 460 and the buffer space 426. As described above, the source gas injected through the center injection holes 422 is directed toward the center of the wafer W, and the source gas injected through the edge injection holes 424 is toward the edge of the wafer W. Secondly, the supplied source gas is discharged. When a high frequency power is applied to the upper electrode 300, an electromagnetic field is formed between the upper electrode 300 and the support plate 220, and the source gas inside the process chamber 100 is discharged to generate plasma. This is a capacitively coupled plasma source method. At this time, as described above, since the lower end of the injection nozzle 424 is closer to the support plate 220 than the lower end of the injection hole 422, the source gas injected from the injection nozzle 424 is the edge of the wafer (W) Can be focused on. In addition, the injection nozzle 424 can supply a sufficient amount of source gas to the edge of the wafer (W), a sufficient amount of plasma can be supplied to the edge of the wafer (W).

Next, a film is deposited in the gap of the wafer W using the generated plasma (S30). The resulting plasma is supplied onto the wafer W, and a film is deposited in the gap of the wafer W. Thereafter, as described above, etching is performed to remove the overhang grown on the gap, and when the etching is completed, the deposition process is repeated in the same manner. Through this method, the gap of the wafer W is filled.

According to the method mentioned above, sufficient source gas and plasma can be supplied to the edge part of the wafer W. As shown in FIG. Process uniformity can be increased for the entire surface of the wafer. It is also possible to deposit a film of uniform thickness on the wafer.

Although the present invention has been described in detail with reference to preferred embodiments, other forms of embodiments are possible. Therefore, the spirit and scope of the claims set forth below are not limited to the preferred embodiments.

According to the present invention, sufficient source gas and plasma can be supplied to the edge portion of the wafer. In addition, process uniformity can be increased with respect to the entire surface of the wafer. It is also possible to deposit a film of uniform thickness on the wafer.

Claims (9)

A process chamber providing an internal space in which a process is performed on the substrate; A support member installed inside the process chamber and supporting the substrate; A shower head positioned at an upper portion of the support member and configured to supply a source gas toward the support member; And Including a plasma generating member for generating a plasma from the source gas supplied from the shower head, The shower head, A jet plate having a plurality of injection holes for injecting the source gas; And And a plurality of injection nozzles coupled to protrude from the jet plate toward the substrate and for injecting the source gas. The method of claim 1, And the spray nozzles are disposed to correspond to an edge portion of the substrate placed on the support member. The method according to claim 1 or 2, And the spray nozzles are coupled to an edge portion of the spray plate. The method of claim 3, The plurality of injection holes include center injection holes formed in the center portion of the injection plate and edge injection holes formed in the edge portion of the injection plate, And the edge injection ports are in communication with the injection nozzles, respectively. The method according to any one of claims 1 to 4, The shower head, A fixed holder holding the jet plate; And And a support shaft connected to an upper portion of the fixed holder. The method of claim 5, The plasma generating member, An upper electrode disposed on the support member; And A lower electrode disposed to face the upper electrode, And the upper electrode is coupled to the fixed holder to be parallel to the jet plate. In the method of processing a substrate using a plasma, Placing the substrate on a support member installed in the process chamber; Supplying a source gas toward the substrate in the process chamber and generating the plasma from the source gas; And Treating the substrate using the plasma, The supplying of the source gas toward the substrate may include supplying the source gas by using a plurality of injection holes of a jet plate disposed in parallel with the substrate and a plurality of injection nozzles coupled to the jet plate on the substrate. Substrate processing method comprising the step. The method of claim 7, wherein The spray nozzles are disposed to correspond to the edge portion of the substrate placed on the support member. The method according to claim 7 or 8, And the injection nozzles are coupled to an edge portion of the injection plate.

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