KR101364196B1 - Batch type ald apparatus and cluster type ald apparatus comprising the same - Google Patents

Abstract

A batch atomic layer deposition apparatus is disclosed. In the batch atomic layer deposition apparatus according to the present invention, a heater, a cooling water line, a vacuum suction pipe, a source gas inlet pipe, a reaction gas inlet pipe, and a gas discharge pipe are integrally formed in the enclosure, and the boat on which the substrate is stored is lifted and received. Removably coupled to. Therefore, when an abnormality occurs in the enclosure, since only the enclosure can be repaired separately, there is an effect of easy maintenance. In addition, when the substrate is loaded and processed, if an abnormality occurs in the housing, the housing itself may be replaced and used, which is very convenient.

Description

Batch type atomic layer deposition apparatus and cluster type atomic layer deposition apparatus including the same {BATCH TYPE ALD APPARATUS AND CLUSTER TYPE ALD APPARATUS COMPRISING THE SAME}

The present invention relates to a batch type atomic layer deposition apparatus for producing a semiconductor device having excellent productivity and easy maintenance, and a clustered atomic layer deposition apparatus including the same.

In order to manufacture a semiconductor device, a process of depositing a necessary thin film on a substrate such as a silicon wafer is essential. Sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD) and the like are mainly used in the thin film deposition process.

Sputtering is a technique in which argon ions generated in a plasma state collide with a surface of a target so that a target material deviated from the surface of the target is deposited as a thin film on a substrate. The sputtering method has an advantage that a high purity thin film having excellent adhesion can be formed, but there is a limit to form a fine pattern having a high aspect ratio.

Chemical vapor deposition is a technique of depositing a thin film on a substrate by injecting various gases into the reaction chamber and chemically reacting gases induced by high energy such as heat, light or plasma with the reaction gas. The chemical vapor deposition method has a problem in that the thermodynamic stability of the atoms is very difficult to control due to the rapid chemical reaction and the physical, chemical and electrical properties of the thin film are deteriorated.

The atomic layer deposition technique is a technique of alternately supplying a source gas and a purge gas, which are reactive gases, and depositing a thin film on an atomic layer basis on a substrate. Since atomic layer deposition utilizes surface reactions to overcome the limitations of step coverage, it is suitable for forming fine patterns having a high aspect ratio and has excellent electrical and physical properties of the thin film.

An apparatus for performing the atomic layer deposition method includes a sheet type apparatus that processes a process by loading substrates one by one into a chamber, and a batch apparatus that loads and processes a plurality of substrates in a chamber.

Prior art related to a batch atomic layer deposition apparatus is disclosed in Korea Patent Publication No. 10-2011-0111884. In the conventional batch atomic layer deposition apparatus as described above, the substrate placing table 20 is moved by the substrate moving means 30 in the chamber 10, and the gas injection means 40 and the gas discharge means 50 are provided. Since the chamber 10 is provided inside the chamber 10 separately from the chamber 10, there is a disadvantage in that the maintenance is inconvenient.

The present invention has been made to solve the problems of the prior art as described above, an object of the present invention is to provide a batch atomic layer deposition apparatus having a high productivity and easy maintenance, and a clustered atomic layer deposition apparatus comprising the same. .

The batch atomic layer deposition apparatus according to the present invention for achieving the above object is a boat having a plurality of substrates are spaced apart from each other and installed to be liftable; A lower surface is opened and the boat is detachably coupled to the boat, and when the boat is coupled to the open bottom surface, the substrate is loaded therein and includes a chamber in which a chamber is formed.

In addition, in the cluster-type batch atomic layer deposition apparatus according to the present invention for achieving the above object, a plurality of batch-type atomic layer deposition apparatus is disposed, the first load lock chamber in which the substrate before the treatment and the substrate after the treatment is stored And a second load lock chamber.

In the batch atomic layer deposition apparatus and the cluster type atomic layer deposition apparatus including the same according to the present invention, a heater, a coolant line, a vacuum suction pipe, a source gas inlet pipe, a reaction gas inlet pipe, and a gas discharge pipe are integrally formed in a housing, and a substrate The boat to be loaded and stored is detachably coupled to the enclosure while being lifted. Therefore, when an abnormality occurs in the enclosure, since only the enclosure can be repaired separately, there is an effect of easy maintenance.

In addition, when the substrate is loaded and processed, if an abnormality occurs in the housing, the housing itself may be replaced and used, which is very convenient.

In addition, since a plurality of substrates are simultaneously loaded and processed, the productivity of the atomic layer deposition process is excellent.

1 is a perspective view of a batch atomic layer deposition apparatus according to an embodiment of the present invention.
Fig. 2 is an exploded perspective view of Fig. 1; Fig.
3 is a view showing the internal configuration of the enclosure shown in FIG.
4 is a plan sectional view of FIG.
Figure 5 is a plan view of a clustered batch atomic layer deposition apparatus according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION The following detailed description of the invention refers to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled, if properly explained. In the drawings, like reference numerals refer to the same or similar functions throughout the several views, and length and area, thickness, and the like may be exaggerated for convenience.

Hereinafter, a batch atomic layer deposition apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view of a batch atomic layer deposition apparatus according to an embodiment of the present invention, Figure 2 is an exploded perspective view of FIG.

As shown, the batch atomic layer deposition apparatus according to the present embodiment includes a boat 100 and a housing 200 which are detachably coupled to each other to form a chamber in which the substrate 50 is processed. do.

The boat 100 is installed to be liftable by a known elevator system (not shown), and includes a support 110, a protrusion 120, and a support bar 130.

The supporting part 110 is formed in a substantially cylindrical shape and placed on the bottom of the process chamber 310 (see FIG. 5), and a manifold 280 whose upper edge is coupled to the lower end of the housing 200 to be described later. ) Is hermetically coupled. Protruding portion 120 is formed in a substantially cylindrical shape is installed on the upper surface of the support 110, formed into a diameter smaller than the inner diameter of the inner housing 200b of the housing 200 to be described later inserted into the interior of the inner housing 200b do. The protrusion 120 is rotatably installed to allow the substrate 50 to rotate during the deposition process to ensure uniformity of the atomic layer deposition process, and the deposition process for securing the reliability of the atomic layer deposition process inside the protrusion 120. An auxiliary heater (not shown) may be installed to apply heat from the lower side of the substrate 50.

The support bar 130 is provided with a plurality of spaced apart from each other along the edge portion of the protrusion 120, a plurality of support grooves 131 are formed on the inner surface facing the center side of the protrusion 120, respectively. The edge portion side of the substrate 50 is inserted into and supported in the support groove 131, whereby the plurality of substrates 50 are stacked and stored in the boat 100 in a stacked form.

The substrate 50 loaded and stored in the boat 100 may be preheated before the deposition process by the auxiliary heater.

The enclosure 200 is formed in a cylindrical shape with an open lower surface, the upper surface side is supported by the process chamber 310 (see FIG. 5), and the boat 100 is detachably coupled. When the boat 100 is raised and the upper edge portion of the base 110 of the boat 100 is hermetically coupled to the open bottom surface of the enclosure 200, the substrate 50 is formed inside the enclosure 200. ) Is loaded and formed into a chamber.

The enclosure 200 will be described with reference to FIGS. 2 to 4. 3 is a view showing the internal configuration of the enclosure shown in Figure 2, Figure 4 is a plan cross-sectional view of FIG.

As shown, the enclosure 200 includes an outer enclosure 200a and an inner enclosure 200b having mutually spaced apart and open lower surfaces thereof, and an insulating material 210 between the outer enclosure 200a and the inner enclosure 200b. ) Is filled.

The enclosure 200 may be formed of an aluminum material which is light and has excellent corrosion resistance and workability. In addition, the enclosure 200 may be anodized so that the oxide film itself formed by intentionally oxidizing and eroding the surface of the enclosure 200 may protect the enclosure 200 from external influences.

The heat insulator 210 prevents the heater 220 for heating the inside of the enclosure 200 in which the substrate 50 is loaded and processed, and prevents the enclosure 200 from rising to a predetermined temperature or more. Coolant line 230 through which the coolant flows to cool the inside, and the vacuum suction tube 240 and the housing 200 for maintaining the interior of the enclosure 200 in a vacuum state when the boat 100 is hermetically coupled to the enclosure 200. Source gas inlet pipe 250 for introducing the source gas into the inside, the reaction gas inlet pipe 260 for introducing the reaction gas into the interior of the housing 200 and the source gas introduced into the housing 200 and the reaction The gas discharge pipe 270 for discharging the gas to the outside is supported.

The manifold 280 is coupled to the bottom surface between the outer housing 200a and the inner housing 200b. The manifold 280 is provided with a cooling water line 230, a vacuum suction pipe 240, a source gas inlet pipe 250, a reaction gas inlet pipe 260, and a gas discharge pipe 270, respectively.

In addition, a connector (not shown) for supplying external power to the heater 220 may be installed in the manifold 280.

The batch atomic layer deposition apparatus according to the present embodiment includes a heater 220, a coolant line 230, a vacuum suction pipe 240, a source gas inlet pipe 250, a reaction gas inlet pipe 260, and a gas discharge pipe 270. It is formed integrally with the enclosure 200, and the boat 100, on which the substrate 50 is stored, is lifted and detachably coupled to the enclosure 200. Therefore, when an abnormality occurs in the enclosure 200, since only the enclosure 200 can be separated and repaired separately, maintenance is easy. In addition, when an abnormality occurs in the enclosure 200 when the substrate 50 is loaded and processed, the enclosure 200 itself may be replaced and used, which is very convenient.

On the inner surface of the source gas inlet pipe 250 toward the center of the housing 200 and the inner surface of the reaction gas inlet pipe 260, a plurality of discharge holes for discharging the source gas and the reaction gas into the interior of the housing 200 ( 251 and 261 are formed, respectively. In addition, a plurality of suction holes 271 are formed on the inner surface of the gas discharge pipe 270 toward the center of the enclosure 200 to suck and discharge the source gas and the reaction gas introduced into the enclosure 200 to the outside. .

In this case, the discharge holes 251 and 261 are mutually supported by the support bar 130 so that when the boat 100 is coupled to the housing 200, the source gas and the reaction gas can be uniformly supplied to the substrate 50. It is preferably located at an interval between the adjacent substrate 50 and the substrate 50, respectively. In addition, when the boat 100 is coupled to the housing 200, the suction holes 271 are adjacent to each other supported by the support bar 130 so that the source gas and the reaction gas can be easily sucked and discharged to the outside. It is preferably located at a distance between the substrate 50 and the substrate 50.

On the other hand, by installing an air plasma cathode electrode (not shown) connected to the plasma power source (not shown) on the inner surface of the discharge holes (251, 261), for example, a remote plasma (atomic plasma deposition type atomic layer deposition apparatus can be implemented). . Using a remote plasma can reduce the formation temperature of the thin film to improve the reliability of the semiconductor device.

In addition, a sealing member (not shown) may be interposed between the manifold 280 of the enclosure 200 and the support part 110 of the boat 100 for stable sealing of the boat 100 and the enclosure 200. .

In addition, the distance between the inner surface of the inner housing 200b and the outer circumferential surface of the substrate 50 may be minimized. That is, the distance between the inner surface of the inner enclosure 200b and the outer circumferential surface of the substrate 50 is sufficient enough to allow the air flow to flow smoothly, so if the gap is minimized, the source gas per batch used in the atomic layer deposition process and Since the amount of reaction gas can be minimized, the process cost can be reduced.

Figure 5 is a plan view of a clustered batch atomic layer deposition apparatus according to an embodiment of the present invention, it will be described.

As shown, the clustered batch atomic layer deposition apparatus includes a plurality of process chambers 310 in which the boat 100 (see FIG. 2) and the enclosure 200 are set together in a set, and the substrate 50 before processing (FIG. 2) the first load lock chamber 320 is stored and the second load lock chamber 330 is stored radially centered around the robot chamber 340, the robot 345 is installed.

The robot 345 transfers the unprocessed substrate 50 stored in the first load lock chamber 320 to the process chamber 310 so that the robot 345 is installed in a linear motion, a rotation motion, and a lifting motion. The substrate 50 is transferred to the second load lock chamber 330.

During the processing of the substrate 50 in the plurality of process chambers 310, if an abnormality occurs in the enclosure 200 installed in any one of the process chambers 310, the process chamber 310 in which the abnormality occurs is identified. By installing an extra enclosure 200 can be restarted immediately. Therefore, not only can the repair be easily performed, but the time for stopping the process chamber 310 can be shortened.

The above-described embodiments of the present invention have been described in detail with reference to the accompanying drawings, in which detailed contour lines are omitted. It should be noted that the above-described embodiments are not intended to limit the technical spirit of the present invention and are merely a reference for understanding the technical scope of the present invention.

100: Boat
110:
120: protrusion
130: support bar
200: enclosure;
210: insulation
220: heater
280: manifold

Claims (13)

A boat in which a plurality of substrates are stacked and spaced apart from each other and installed to be liftable;
A lower surface is opened and the boat is detachably coupled to the boat, and when the boat is lifted up and coupled to an open bottom surface, the board includes a chamber in which the substrate is loaded and processed.
The enclosures are formed to have a mutual gap and each of which is formed of an outer enclosure and an inner enclosure having an open lower surface.
And a heater, a gas inlet tube, and a gas outlet tube are installed between the outer case and the inner case. The method of claim 1,
The gas inlet pipe includes a source gas inlet pipe and a reaction gas inlet pipe,
Insulation is filled between the outer housing and the inner housing,
The heat insulating material is a batch atomic layer deposition apparatus, characterized in that the heater, the source gas inlet pipe, the reaction gas inlet pipe and the gas discharge pipe is supported. 3. The method of claim 2,
The insulating material is a batch atomic layer deposition apparatus, characterized in that the cooling water line and the vacuum suction pipe is further supported. The method of claim 3,
A manifold connected to the heater, the cooling water line, the vacuum suction pipe, the source gas inlet pipe, the reaction gas inlet pipe, and the gas discharge pipe is installed on a lower surface between the outer container and the inner housing. A batch atomic layer deposition apparatus. 5. The method of claim 4,
The boat,
A support portion having an upper edge portion sealed to the manifold;
A cylindrical protrusion installed on an upper surface of the support part and formed to have a diameter smaller than an inner diameter of the inner housing and inserted into the inside of the housing;
A plurality of installed atomic layer deposition apparatus characterized in that it has a plurality of support bars formed along the edge portion side of the protruding portion, the support bar is formed to correspond to each of the plurality of support grooves are inserted into the edge portion of the substrate. The method of claim 5,
The protrusion is rotatably installed, the auxiliary heater is characterized in that the auxiliary heater is installed inside the protrusion. The method of claim 5,
One surface of the source gas inlet pipe and the reaction gas inlet pipe is formed with a plurality of discharge holes for discharging the source gas and the reaction gas, respectively, into the interior of the housing,
One surface of the gas discharge pipe is formed with a plurality of suction holes for sucking and discharging the source gas and the reaction gas discharged into the interior of the housing,
And the discharge hole and the suction hole are positioned at intervals between the substrate and the substrate adjacent to each other supported by the support bar when the boat is coupled to the enclosure. The method of claim 5,
And a sealing member is interposed between the manifold and the support. The method of claim 1,
The housing is a batch atomic layer deposition apparatus, characterized in that formed of aluminum. 10. The method of claim 9,
The housing is a batch atomic layer deposition apparatus, characterized in that the anodized (Anodizing) process. The batch atomic layer deposition apparatus of any one of Claims 1-10 is arrange | positioned, Comprising: The 1st load lock chamber in which the board | substrate before a process is stored, and the 2nd load lock chamber in which the board | substrate after a process is stored are characterized by the above-mentioned. Clustered batch atomic layer deposition apparatus. 12. The method of claim 11,
The batch atomic layer deposition apparatus is a cluster type batch atomic layer deposition apparatus, characterized in that four. The method of claim 12,
Clustered batch atomic layer deposition apparatus comprising a further one of said enclosure.

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