KR19980061490A - Thin film type optical path control device which can prevent initial warpage and its manufacturing method - Google Patents

Abstract

Disclosed are a thin film type optical path adjusting device having an actuator having two supporting parts and a manufacturing method thereof. The device includes an active matrix having M × N transistors formed therein and a drain pad formed on one side thereof, and i) one side contacting an upper portion of the active matrix through two support parts, and the other side being interposed with a first air gap. A lower electrode stacked in parallel with the active matrix to which an image signal is applied, ii) a strained layer stacked on top of the lower electrode to cause strain according to an electric field, and iii) an upper portion formed on top of the strained layer to which a bias voltage is applied. An actuator having an electrode. According to the present invention, by forming an actuator having two support portions on the top of the active matrix, it is possible to minimize the initial tilting of the actuator to improve the horizontality of the actuator, and to improve the light efficiency of the light beam incident from the light source. Can be.

Description

Thin film type optical path control device which can prevent initial warpage and its manufacturing method

The present invention relates to Actuated Mirror Arrays (AMA), which is a thin film type optical path control device, and a method of manufacturing the same, and more particularly, by forming an actuator having two support portions on top of an active matrix, the initial tilt of the actuator ( The present invention relates to a thin film type optical path control apparatus and a method of manufacturing the same, which minimize the initial tilting, improve the horizontality of the actuator, and improve the light efficiency of the light beam incident from the light source.

In general, an optical path adjusting apparatus or an optical modulator capable of adjusting a light beam incident from a light source may be variously applied to optical communication, image processing, and information display apparatus. In general, such devices are classified into two types according to their optical properties.

One type is a direct view type image display device, such as a CRT (Cathode Ray Tube), and the other type is a projection type image display device, a liquid crystal display (LCD), an AMA, or a deformable mirror device (DMD). And the like. Although the CRT device has excellent image quality, there is a problem that the weight and volume of the device increase and the manufacturing cost increases as the screen is enlarged. On the other hand, the liquid crystal display (LCD) has an advantage in that the optical structure is simple to form a thin layer so that the weight of the device can be reduced and the volume can be reduced. However, the liquid crystal display has a disadvantage in that the efficiency is low enough to have a light efficiency of 1 to 2% due to polarization of light, the response speed of the liquid crystal material is slow, and the inside thereof is easily overheated. Therefore, an image display device such as AMA or DMD has been developed to solve the above problem. Currently, AMA has a light efficiency of 10% or more, compared to a DMD device having a light efficiency of about 5%.

The AMA is a device that can adjust the luminous flux so that each of the mirrors installed therein reflects the light incident from the light source at a predetermined angle, and the reflected light passes through a slit and is projected onto the screen to form an image. to be. Therefore, the structure and operation principle thereof are simple, and high light efficiency can be obtained compared to a liquid crystal display device or a DMD. In addition, the contrast is improved to obtain a bright and clear image. The mirrors built into the AMA are inclined by the electric field generated in correspondence with the slits. Therefore, the luminous flux incident from the light source is adjusted at a predetermined angle to form an image on the screen. In general, each actuator causes deformation in accordance with the electric field generated by the applied electric image signal and the bias voltage.

When the actuator causes deformation, each of the mirrors mounted on top of the actuator is inclined. Therefore, the inclined mirrors can reflect the light incident from the light source at a predetermined angle. Piezoelectric materials such as PZT (Pb (Zr, Ti) O ₃ ), or PLZT ((Pb, La) (Zr, Ti) O ₃ ) are used as actuators for driving the respective mirrors. In addition, the actuator can be configured as a warping material such as PMN (Pb (Mg, Nb) O ₃ ).

The optical path control device using AMA is largely classified into a bulk type and a thin film type. The bulk optical path control device is described, for example, in US Pat. Nos. 5,085, 497 (issued to Gregory Um, et al.), 5, 159, 225 (issued to Gregory Um, et al.), 5, 175. , Issued to Gregory Um, et al. The bulk optical path control device cuts a thin layer of multilayer ceramic, mounts a ceramic wafer having a metal electrode therein in an active matrix including a transistor, and then processes it by sawing and mirrors on the top. It is done by installation. However, bulk devices require high precision in design and manufacture because the actuators must be separated by a sawing method, and the response speed of the deformation part is slow. Therefore, a thin film type optical path control apparatus that can be manufactured using a semiconductor manufacturing process has been developed.

Such a thin film type optical path control device is disclosed in patent application No. 95-13353 (name of the invention: a method of manufacturing a light control device) filed by the applicant on May 26, 1995. FIG. 1 is a plan view of the thin film type optical path adjusting device described in the preceding application, and FIG. 2 is a cross-sectional view taken along line AA ′ of the device shown in FIG. 1.

As shown in Fig. 1 and Fig. 2, the thin film type optical path control device is composed of an active matrix 1 and an actuator 3 provided on the active matrix 1.

The active matrix 1 is composed of a semiconductor such as silicon (Si), and includes M × N (M, N is an integer) MOS (Metal Oxide Semiconductor) transistors (not shown). In addition, the active matrix 1 may be formed of an insulating material such as glass, alumina (Al ₂ O ₃ ), or the like. A pad 5 is formed on one side of the active matrix 1. The pad 5 is electrically connected to a transistor embedded in the active matrix 1.

The actuator 3 is composed of a membrane 7, a plug 9, a lower electrode 11, an active layer 15 and an upper electrode 17.

As shown in FIG. 1, the membrane 7 has a rectangular concave portion formed at one side of a center portion of the actuator 3, and a quadrangular protrusion portion corresponding to the concave portion is formed at the other side thereof. . The protrusion of the membrane of the actuator adjacent to the concave portion of the membrane 7 is fitted, and the protrusion of the membrane 7 is fitted into the concave portion of the adjacent actuator. 2, a portion of one side of the membrane 7 is in contact with an upper portion of the active matrix 1 in which the pad 5 is tongued, and the other side of the membrane 7 is disposed through an air gap 8. It is formed to be parallel to the active matrix 1.

The plug 9 is formed perpendicular to the portion of the membrane 7 in which the pad 5 is formed. The plug 9 is electrically connected to the pad 5. The lower electrode 11 is formed on the membrane 7, and the deformable part 15 is formed on the lower electrode 11. The upper electrode 17 is formed on the deformation part 15. The upper electrode 17 performs not only a function of the electrode but also a mirror reflecting a light beam incident from a light source.

Hereinafter, a manufacturing method of the thin film type optical path control device will be described with reference to the drawings.

3A to 3E show a manufacturing process diagram of the apparatus shown in FIG. Referring to FIG. 3A, a sacrificial layer 2 made of Phospho-Silicate Glass (PSG) is stacked on an active matrix 1 having a pad 5 formed on one side thereof. The sacrificial layer 2 is formed to have a thickness of about 1.0 to 2.0 μm by using a chemical vapor deposition (CVD) method. Subsequently, a photo resist (not shown) is applied on the sacrificial layer 2, and then a portion of the sacrificial layer 2 is etched to pad the top 5 of the active matrix 1. Expose the part in which is formed.

Referring to FIG. 3B, a membrane 7 having a thickness of about 0.1 μm to about 1.0 μm is stacked on the exposed portion of the active matrix 1 and the sacrificial layer 2. The membrane 7 is formed by sputtering or chemical vapor deposition (CVD) of silicon nitride (Si ₃ N ₄ ). Subsequently, a portion of the membrane 7 formed on the exposed portion of the active matrix 1 is etched by the conventional photolithography method to form the opening 6. Subsequently, a plug 9 made of a metal having good electrical conductivity such as tungsten (W) or titanium (Ti) is formed through the opening 6. The plug 9 is formed using a lift-off method to be electrically connected to the pad 5.

The lower electrode 11 is stacked on the membrane 7 in which the opening 6 is formed. The lower electrode 11 is formed to have a thickness of about 500 to 2000 kW using a vacuum evaporation or sputtering method of a metal such as platinum (Pt) or platinum-titanium (Pt-Ti). Form. The lower electrode 11 is electrically connected to the plug 9, and thus the pad 5, the plug 9 and the lower electrode 11 are electrically connected to each other.

Referring to FIG. 3C, the deformation part 15 is stacked on the lower electrode 11. The deformable portion 15 is formed to have a thickness of about 0.1 μm to 1.0 μm using piezoelectric materials such as PZT or PLZT, or electrostrictive materials such as PMN. The deformable portion 15 is formed using a sol-gel method or a chemical vapor deposition method (CVD).

The upper electrode 17 is stacked on the deformable portion 15. The upper electrode 17 is formed to have a thickness of about 500 to 1000 Å by sputtering or vacuum deposition. Subsequently, the upper electrode 17, the deformable portion 15, the lower electrode 11, and the membrane 7 are sequentially etched from the top by using a photolithography method to pattern the pattern. In this case, the upper electrode 17, the deformable part 15, and the lower electrode 11 are etched to be separated from the upper electrode, the deformable part, and the lower electrode of the adjacent actuator, respectively. At the same time, the membrane 7 is etched to be connected with the membrane of the adjacent actuator. The protective layer 18 is formed by coating a photoresist on a side surface generated when the upper electrode 17 and the actuators are separated from each other.

Referring to FIG. 3D, the sacrificial layer 2 is etched using an oxide buffered etchant (BOE) in which ammonium fluoride (NH ₄ F) and hydrogen fluoride (HF) are mixed to form an air gap. gap) 8 is formed. In addition, the protective layer 18 is removed by a wet etching method, and the remaining etching solution is washed with deionized water. Subsequently, a photoresist is coated on the upper electrode 17 to form a mask 19.

Referring to FIG. 3E, a portion of the membrane 7 connected to a membrane of an adjacent actuator is etched by using a reactive ion etching (RIE) method using the mask 19 as an etching mask. Then, the mask 19 is removed by an oxygen (O ₂ ) plasma method to complete the AMA device.

In the above-described thin film type optical path adjusting device, the image signal generated from the MOS transistor embedded in the active matrix 1 is applied to the lower electrode 11 through the pad 5 and the plug 9. At the same time, a bias voltage is applied to the upper electrode 17 to generate an electric field between the upper electrode 17 and the lower electrode 11. By this electric field, the deformation | transformation part 15 shrinks in the direction perpendicular | vertical to an electric field. Accordingly, the actuator 3 is bent in a direction opposite to the direction in which the membrane 7 is formed, and the upper electrode 17 on the actuator 3 reflects the light beam incident from the light source. The light beam reflected by the upper electrode 17 is projected onto the screen through the slit to form an image.

However, in the thin film type optical path adjusting device described in the preceding application, since the actuator is supported by one support portion, the horizontal portion on the other side of the unsupported actuator is inclined downward even without applying an electric field, thereby causing initial tilting. tilting). As a result, the reflection angle of the mirror reflecting the light beam incident from the light source is not constant, which causes a problem of lowering the light efficiency.

Accordingly, an object of the present invention is to form an actuator having two support portions on the top of the active matrix, thereby minimizing the initial tilt of the actuator to improve the flatness of the actuator, and to improve the light efficiency of the light beam incident from the light source. It is to provide an adjusting device and a method of manufacturing the same.

1 is a plan view of a thin film type optical path adjusting device described in the applicant's prior application.

2 is a cross-sectional view taken along line AA ′ of the apparatus shown in FIG. 1.

3A to 3E are manufacturing process diagrams of the apparatus shown in FIG.

4 is a cross-sectional view of a thin film type optical path control apparatus according to the present invention.

5A to 5E are manufacturing process diagrams of the apparatus shown in FIG. 4.

6 is a diagram illustrating a state in which the apparatus shown in FIG. 4 operates.

Explanation of symbols on the main parts of the drawings

131: active matrix 133: actuator

135: drain pad 137: protective layer

139: etch stop layer 141: plug

143: sacrificial layer 145: lower electrode

147: strained layer 149: upper electrode

151: first air gap 153: mirror

155: second air gap

In order to achieve the above object, the present invention provides an active matrix comprising an M × N transistor and a drain pad formed on one side thereof; And i) a lower electrode having one side contacting the upper portion of the active matrix through two support parts and the other side stacked in parallel with the active matrix via the first air gap 151 to which an image signal is applied, ii) the lower electrode. Provided is a thin film type optical path control apparatus including a strained layer stacked on top of an electrode to cause deformation according to an electric field, and iii) an actuator formed on top of the strained layer to which a bias voltage is applied.

In order to achieve the above object, the present invention provides a method comprising: providing an active matrix having M × N transistors embedded therein and a drain pad formed on one side thereof; And a lower electrode formed on the upper side of the active matrix, i) one side of which is in contact with the upper portion of the active matfix through two support parts, and the other side thereof parallel to the active matrix via a first air gap, ii) the lower electrode. It provides a method of manufacturing a thin film type optical path control device comprising the step of forming a strain layer and a iii) a strain causing a deformation formed on top of the deformation layer.

In the thin film type optical path adjusting device according to the present invention, an image signal is applied to a lower electrode which is a signal electrode through a drain pad and a plug from a transistor embedded in an active matrix. In addition, a bias voltage is applied to the upper electrode, which is a common electrode, to generate an electric field between the upper electrode and the lower electrode. By this electric field, the strained layer laminated between the upper electrode and the lower electrode causes deformation. The strained layer contracts in a direction perpendicular to the electric field. At this time, since both sides of the strained layer are supported by two support parts, when the electric field is applied, the strained layer expands and buckling occurs, causing convex upwards. In addition, the actuator including the strained layer also rises upward, so that the light path incident from the light source generates a light path difference when an electric field is applied or when an electric field is not applied. Accordingly, the light beam incident from the light source according to the optical path difference is reflected at a predetermined angle by a mirror formed on the upper electrode, and is then projected onto a screen to form an image.

Therefore, the present invention forms an actuator having two support portions on the top of the active matrix, thereby minimizing the initial tilt of the actuator, thereby improving the horizontality of the actuator, and consequently improving the light efficiency of the light beam incident from the light source.

Hereinafter, a method of manufacturing a thin film type optical path control apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

Figure 4 shows a cross-sectional view of the thin film type optical path control apparatus according to the present invention.

Referring to FIG. 4, in the thin film type optical path adjusting apparatus according to the present invention, an active matrix 131 having a drain pad 135 formed on one side and an actuator 133 formed on the active matrix 131 may be provided. It includes.

The active matrix 131 includes a passivation layer 137 stacked on the active matrix 131 and the drain pad 135 and an etch stop layer stacked on the passivation layer 137. (139). In the active matrix 131, M x N (M and N are integers) MOS transistors (not shown) are embedded.

The actuator 133 has two support parts formed at one lower side thereof to be in contact with the etch stop layer 139, and the other side is stacked in parallel with the etch stop layer 139 through a first air gap 151. The bottom electrode 145, an active layer 147 stacked on top of the lower electrode 145, and a top electrode stacked on top of the deformation layer 147 ( 149, and a plug 141 vertically formed from the bottom of the lower electrode 145 to the drain pad 135 through the etch stop layer 139.

Hereinafter, a method of manufacturing the above-described thin film type optical path control apparatus will be described in detail with reference to the accompanying drawings.

5A to 5E are manufacturing process diagrams of the apparatus shown in FIG. 4. 5A to 5E, the same reference numerals are used for the same members as in FIG.

Referring to FIG. 5A, a protective layer 137 is formed by using silicate glass PSG on an active matrix 131 having M × N transistors (not shown) and a drain pad 135 formed on one side thereof. )). The protective layer 137 is formed to have a thickness of about 0.1 μm to 1.0 μm using a chemical vapor deposition (CVD) method. The protective layer 137 prevents the active matrix 131 from being damaged during subsequent processing.

An etch stop layer 139 made of nitride is stacked on the passivation layer 137. The etch stop layer 139 is formed to have a thickness of about 1000 to 2000 kPa using a low pressure chemical vapor deposition (LPCVD) method. The etch stop layer 139 prevents the protective layer 137 and the active matrix 131 from being etched during the subsequent etching process. Subsequently, the etch stop layer 139 and the protective layer 137 are etched from the portion of the etch stop layer 139 where the drain pad 135 is formed below, and then the plug 141 is formed. The plug 141 is vertically formed from the etch stop layer 139 to the drain pad 135 using a tungsten, platinum, or the like lift-off method. Therefore, the image signal is applied to the lower electrode 145 through the drain pad 135 and the plug 141 from the transistor embedded in the active matrix 131.

Referring to FIG. 5B, a sacrificial layer 143 is stacked on the etch stop layer 139 and the plug 141. The sacrificial layer 143 is formed to have a thickness of about 0.5 μm to 2.0 μm by using an silicate glass (PSG) method using an atmospheric pressure chemical vapor deposition (APCVD) method. In this case, since the sacrificial layer 143 covers the upper portion of the active matrix 131 in which the transistor is embedded, the flatness of the surface thereof is very poor. Therefore, the surface of the sacrificial layer 143 is planarized by using a spin on glass (SOG) method or a chemical mechanical polishing (CMP) method.

After the surface of the sacrificial layer 143 is planarized, the sacrificial layer 143 is patterned to form two support portions of the actuator 133 which is subsequently formed. That is, a portion of the support layer of the actuator 133 is formed by exposing a portion of the etch stop layer 139 having the plug 141 formed below and a portion of the other side of the etch stop layer 139 in which the plug 141 is not formed. .

Referring to FIG. 5C, the lower electrode 145, which is a signal electrode, is stacked on top of the exposed etch stop layer 139 and on the sacrificial layer 143. The lower electrode 145 is formed to have a thickness of about 0.1 μm to about 1.0 μm using a metal such as platinum (Pt) or platinum-tantalum (Pt-Ta) using a sputtering method. The lower electrode 145 is formed on the sacrificial layer 143 on which the surface is planarized, and thus is stacked evenly. An image signal is applied to the lower electrode 145, which is a signal electrode, from the transistor embedded in the active matrix 131 through the drain pad 135 and the plug 141. The lower electrode 145 simultaneously performs the functions of the membrane and the lower electrode in the thin film type optical path adjusting device described in the previous application. This eliminates the need for a membrane manufacturing process and simplifies the manufacturing process. Subsequently, Iso-Cutting is performed to separate the lower electrode 145 into a predetermined pixel shape.

Subsequently, a strain layer 147 formed of PZT or PLZT is formed on the lower electrode 145. The strained layer 147 is formed to have a thickness of about 0.1 to 1.0 μm, preferably about 0.4 μm, by using a sol-gel method, sputtering method, or chemical vapor deposition (CVD) method, and then rapid thermal annealing. : Phase change by heat treatment by RTA) method. The strained layer 147 is deformed by an electric field generated between the upper electrode 149 and the lower electrode 145. Since the strained layer 147 is also formed on the flat bottom electrode 145, the surface is stacked evenly.

The upper electrode 149 is stacked on top of the strained layer 147. The upper electrode 149 is formed of a metal having excellent electrical conductivity such as aluminum (Al), platinum, or silver (Ag) to have a thickness of about 0.1 μm to 1.0 μm using a sputtering method. Subsequently, the upper electrode 149, the strained layer 147, and the lower electrode 145 are sequentially patterned from the upper portion of the upper electrode 149 to form a pixel having a predetermined shape.

Referring to FIG. 5D, the actuator 133 is completed by forming a mirror 153 on the center of the upper electrode 149. That is, a photoresist (not shown) is coated on the upper electrode 149 and then patterned to expose a portion of the upper electrode 149. Subsequently, a portion of the exposed upper electrode 149 and an upper portion of the photoresist are formed to have a thickness of about 0.1 μm to about 1.0 μm using a sputtering method. Subsequently, the sputtered metal is patterned to form a mirror 153 having a support portion under the sputtered metal. Accordingly, the mirror 153 is formed of a flat plate formed so that the lower center of the mirror 153 contacts the upper portion of the upper electrode 149 through the supporting portion, and both sides thereof are horizontal to the upper electrode 149 via the second air gap 155. It has a shape. The photoresist is etched and removed.

Referring to FIG. 5E, the sacrificial layer 143 is etched using hydrogen fluoride (HF) vapor to form a first air gap 151, and then cleaned and dried to complete the actuator 133. Then, a rinse and dry treatment is performed to remove the remaining etching solution to complete the AMA device.

After completing the M × N thin film type AMA devices as described above, the active matrix 131 is formed by sputtering or evaporation of a metal such as chromium (Cr), nickel (Ni), or gold (Au). Is deposited at the bottom of the to form an ohmic contact (not shown). In addition, a bias (Tape Carrier Package) (not shown) bonding is applied to apply a bias voltage to a subsequent upper electrode 149 which is a common electrode and an image signal to a lower electrode 145 which is a signal electrode. The active matrix 131 is cut to a predetermined thickness. Subsequently, a photoresist layer (not shown) is formed on the pad of the AMA panel so that the pad of the AMA panel (not shown) has a sufficient height in preparation for TCP bonding. Next, the portion of the photoresist layer in which the pad is formed is patterned to expose the pad of the AMA panel. Subsequently, the photoresist layer is etched using a dry etching method or a wet etching method, and the active matrix 131 is completely cut into a predetermined shape, and then the pad of the AMA panel and the pad of TCP are ACF (Anisotropic Conductive Film). (Not shown) to complete the manufacture of the thin film AMA module (module).

6 is a diagram illustrating a state in which the apparatus operates when an electric field is applied to the apparatus shown in FIG. 4. Referring to FIG. 6, when an electric field is applied to the apparatus, since both sides of the strained layer 147 are supported by two supporting parts, the strained layer 147 is buckled while being expanded, and thus the strained layer 147. Actuator 133 comprising a) is bent convex upwards. The optical path of the light beam incident on the optical path of the incident light beam in the case would not apply an electric field to the device from the light source to the case of applying the d _1, the electric field from the light source as shown in Fig Speaking d _2, from the light source The incident light beam is reflected at a predetermined angle by the upward movement of the mirror 153 due to the buckling of the deformation layer 147. That is, the luminous flux moves by the difference between d ₂ and d ₁ and is projected onto the screen formed at the predetermined position. Therefore, the apparatus according to the present invention reflects the light beam incident from the light source at a predetermined angle by using the optical path difference due to the buckleing, and then projects the image onto the small green.

In the above-described thin film type optical path control apparatus according to the present invention, the image signal transmitted through the pad of the TCP and the pad of the AMA panel is transmitted through the transistor, the drain pad 135 and the plug 141 built in the active matrix 131. It is applied to the lower electrode 145 which is a signal electrode. At the same time, a bias voltage is applied to the upper electrode 149, which is a common electrode, to generate an electric field between the upper electrode 149 and the lower electrode 145. By this electric field, the strained layer 147 between the upper electrode 149 and the lower electrode 145 causes deformation.

Conventionally, since the strained layer is supported on one support, when the electric field is applied, the upper electrode of the upper part of the actuator is operated by the operating principle in which the strained layer contracts in a direction perpendicular to the electric field and tilts the actuator at a predetermined angle. The light beam incident from the light source was reflected. The light beam reflected by the upper electrode is projected onto the screen through the slit to form an image. On the other hand, in the present invention, since both sides of the strained layer 147 are supported by two supporting parts, when the electric field is applied, the strained layer 147 expands, causing buckling and convex upward. Use the principle. That is, when the electric field is applied, the strained layer 147 is buckled, and the actuator 133 including the strained layer 147 is also buckled upward and mounted on the upper electrode 149 of the actuator 133. The mirror 153 is moved by its axis by the upper electrode 149 raised to a predetermined height. Accordingly, the mirror 153 reflects the light beam incident from the light source through a different light path than when an electric field is not applied. The light beam incident from the light source may be adjusted by a predetermined angle and reflected by the optical path difference, and the light beam reflected by the mirror 153 may be projected onto a screen through a slit to form an image.

In the thin film type optical path control apparatus and its manufacturing method according to the present invention, by forming a support portion of the actuator having two support portions on top of the active matrix, the initial tilt of the actuator is minimized to improve the horizontality of the actuator, as a result It is possible to improve the light efficiency of the light beam incident from the.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified without departing from the spirit and scope of the invention described in the claims below. And can be changed.

Claims (10)

An active matrix 131 having M × N transistors embedded therein and a drain pad 135 formed on one side thereof; And i) a lower electrode having one side contacting the upper portion of the active matrix 131 through two supporting parts and the other side stacked in parallel with the active matrix 131 via the first air gap 151 to which an image signal is applied; 145 and ii) a strained layer 147 stacked on top of the lower electrode 145 and causing deformation according to an electric field; and iii) an upper electrode formed on the strained layer 147 and applied with a bias voltage. Thin film type optical path control device comprising an actuator (133) having a (149). The method of claim 1, wherein the active matrix 131 includes a passivation layer 137 formed on the active matrix 131 and the drain pad 135, and an etch stop layer 139 formed on the passivation layer 137. And a plug (141) vertically formed through the etch stop layer (139) and the protective layer (137) to the drain pad (135). 2. The upper electrode 149 of claim 1, wherein the upper electrode 149 is in contact with a central portion of the upper electrode 149 through a supporting part, and both sides thereof are parallel to the upper electrode 149 via a second air gap 155. Thin film type optical path control device, characterized in that it further comprises a mirror (155). The apparatus of claim 3, wherein the mirror (155) is a flat plate having a central portion in contact with an upper portion of one side of the upper electrode (149). The deformable layer 147 of claim 1, wherein the strained layer 147 is supported by the supporting portions of the two actuators 133 to form the active matrix by an electric field generated between the lower electrode 145 and the upper electrode 149. Thin-film optical path control device for causing deformation in the upward direction with respect to. Providing an active matrix having M × N transistors and a drain pad formed on one side thereof; And On the upper part of the active matrix, i) a lower electrode formed on one side of the active matrix in contact with the upper part of the active matrix through two support parts, and the other side of the active matrix being parallel to the active matrix by opening a first air gap; And iii) forming an actuator having an upper electrode formed on the deformation layer. The method of claim 6, wherein forming the actuator comprises: i) forming a protective layer over the drain pad and the active matrix, ii) forming an etch stop layer over the protective layer, iii) And forming a plug vertically through the etch stop layer and the passivation layer to the drain pad. The method of claim 6, wherein the forming of the lower electrode comprises: i) forming a sacrificial layer on top of the etch stop layer and the plug, and ii) spin-on glass on the surface of the sacrificial layer. Planarizing using a method of using, or a chemical mechanical polishing (CMP) method, and iii) etching and patterning the sacrificial layer to form a portion of the etch stop layer having a plug formed thereon and an etch stop layer having no plug formed thereon. A method of manufacturing a thin film type optical path control device, characterized in that it is carried out after exposing a portion of the other side of the actuator to form a portion in which the support portions of two actuators are to be formed. The method of claim 6, wherein the forming of the upper electrode comprises: applying a photoresist on the upper electrode, patterning the photoresist to expose a portion of the upper electrode, the exposed upper electrode and Sputtering a metal on top of the photoresist, and patterning the sputtered metal to form a mirror having a support formed on the bottom thereof. The method of claim 9, wherein the forming of the mirror is performed using any one selected from the group consisting of aluminum, silver, and platinum as the metal.