KR102389260B1 - Composition for hard mask - Google Patents

Abstract

The composition for a hard mask of the present invention includes a linker compound having a specific structure and a polymer of an aromatic compound containing a hydroxyl group, an ether group, or a thioether group. A hard mask having improved etch resistance, solubility, and flatness can be formed from the composition for a hard mask.

Description

Composition for hard mask {COMPOSITION FOR HARD MASK}

The present invention relates to a composition for a hard mask. More particularly, the present invention relates to a composition for a hard mask comprising a polycondensate of at least one aromatic compound.

For example, in the fields of semiconductor manufacturing, microelectronics, etc., the degree of integration of structures such as circuits, wirings, and insulating patterns is continuously improved. Accordingly, a photolithography process for fine patterning of the structures is being developed together.

In general, a photoresist layer is formed by coating a photoresist on an etch target layer, and a photoresist pattern is formed through exposure and development processes. Then, a predetermined pattern may be formed by partially removing the etch target layer using the photoresist pattern as an etch mask. After image transfer to the etch target layer is performed, the photoresist pattern may be removed through an ashing and/or strip process.

An anti-reflective coating (ARC) layer may be formed between the etch target layer and the photoresist layer in order to suppress resolution degradation due to light reflection during the exposure process. In this case, etching of the ARC layer is added, and accordingly, consumption or etching amount of the photoresist layer or the photoresist pattern may be increased. In addition, when the thickness of the etch target layer increases or the etching amount required to form a desired pattern increases, sufficient etch resistance of the required photoresist layer or photoresist pattern may not be secured.

Accordingly, a resist lower layer may be added between the target layer to be etched and the photoresist layer in order to secure the etch resistance and etch selectivity of the photoresist for forming a desired pattern.

The resist underlayer has, for example, sufficient etch resistance (or etch resistance) and heat resistance to a high-temperature etching process, and also satisfies the characteristics for being formed to a uniform thickness by, for example, a spin-on coating process. desirable.

Korean Patent Application Laid-Open No. 10-2010-0082844 discloses an example of a composition for forming a resist underlayer.

Korean Patent Publication No. 10-2010-0082844

One object of the present invention is to provide a composition for a hard mask capable of forming a hard mask having excellent mechanical and chemical properties.

1. A polymer comprising at least one of repeating units represented by Formula 1-1 or Formula 1-2; And a composition for a hard mask comprising a solvent:

[Formula 1-1]

[Formula 1-2]

(In Formulas 1-1 and 1-2, Ar represents an arylene group including at least one of a hydroxyl group, an ether group, or a thioether group,

X represents oxygen (O), sulfur (S) or NR ₁ , R ₁ is an alkyl group having 1 to 4 carbon atoms, alkenyl or alkynyl having 2 to 4 carbon atoms, or an aryl group having 6 to 12 carbon atoms and n is an integer from 1 to 200).

2. The composition for a hard mask according to the above 1, wherein the polymer comprises a linker unit derived from at least one of the linker compounds represented by the following Chemical Formula 2-1 or 2-2:

[Formula 2-1]

[Formula 2-2]

3. The composition for a hard mask according to the above 2, wherein the linker compound comprises a compound represented by the following Chemical Formula 2-2-1:

[Formula 2-2-1]

4. The composition for a hard mask according to the above 1, wherein Ar in Formulas 1-1 and 1-2 is derived from an aromatic compound containing a hydroxyl group, an ether group, or a thioether group.

5. The composition for a hard mask according to 4 above, wherein the aromatic compound containing a hydroxyl group includes at least one of compounds represented by the following Chemical Formula 3 or Chemical Formula 4:

[Formula 3]

(in Formula 3, Ar ₁ and Ar ₂ are each independently a phenylene group or a biphenylene group, n ₁ and n ₂ are each independently an integer of 0 to 2, and at least one of n ₁ and n ₂ is 1 or 2)

[Formula 4]

(In Formula 4, n ₃ and n ₄ are each independently an integer of 0 or 1, and at least one of n ₃ and n ₄ is 1).

6. In the above 5, the aromatic compound containing a hydroxyl group is selected from the group consisting of compounds of the following Chemical Formulas 3-1, 3-2, 4-1, 4-2 and 4-3 A composition for a hard mask comprising at least one selected:

[Formula 3-1]

[Formula 3-2]

[Formula 4-1]

[Formula 4-2]

[Formula 4-3]

.

.

7. The composition for a hard mask according to 4 above, wherein the aromatic compound containing an ether group or a thioether group includes a compound represented by the following Chemical Formula 5:

[Formula 5]

(In Formula 5, X is oxygen (O) or sulfur (S), n ₅ and n ₆ are each an integer of 0 to 2, and n is an integer of 0 to 3).

8. The composition for a hard mask according to 7 above, wherein the aromatic compound containing an ether group or a thioether group includes at least one selected from the group consisting of compounds represented by the following Chemical Formulas 5-1 to 5-4:

[Formula 5-1]

[Formula 5-2]

[Formula 5-3]

[Formula 5-4]

9. The composition for a hard mask according to the above 1, comprising 5 to 30% by weight of the polymer and 70 to 95% by weight of the solvent based on the total weight of the composition

10. The composition for a hard mask according to 1 above, further comprising at least one of a crosslinking agent, a catalyst, or a surfactant.

By using the composition for a hard mask according to embodiments of the present invention, a hard mask having excellent etch resistance and improved film-forming properties such as solubility and coating property may be formed.

The composition for a hard mask according to embodiments of the present invention may include a polymer polycondensed using an aromatic compound containing a hydroxyl group, an ether group, or a thioether group, and a linker compound having a high carbon content. By improving the etch resistance from the linker compound in addition to the etch resistance basically secured from the aromatic compound, the mechanical properties of the hard mask can be remarkably improved.

In addition, by using a compound selected in consideration of solubility in a solvent as the aromatic compound, film-forming properties can be improved together.

A high-resolution photolithography process can be implemented using the hardmask formed from the hardmask composition, and a target pattern having a desired fine line width can be formed.

Embodiments of the present invention include a polymer including a linker unit having a high carbon content of a specific structure, and thus provide a composition for a hard mask with significantly improved etch resistance.

Using the hardmask composition, for example, a hardmask film used as a resist lower film may be formed by being applied between the photoresist layer and the etch target film. The hard mask layer may be partially removed through a photoresist pattern to form a hard mask, and the hard mask may be used as an additional etching mask.

The hardmask layer or hardmask may be used as, for example, a spin-on hardmask (SOH).

Hereinafter, the composition for a hard mask according to embodiments of the present invention will be described in detail. When there is an isomer of the compound or resin represented by the formula used in the present application, the compound or resin represented by the formula means the representative formula including the isomer.

As used herein, the term "aromatic" or "aromatic compound" is used to encompass not only a compound in which the entire compound satisfies the aromaticity, but also a compound in which some structures or groups of the compound satisfy the aromaticity.

As used herein, the term “arylene group” may refer to a divalent group derived from the aforementioned aromatic compound.

As used herein, the term “carbon content” may mean a ratio of the number of carbon masses to the total number of masses per molecule of a compound.

The composition for a hard mask according to embodiments of the present invention includes a polymer (or condensate) and a solvent, and may further include additional agents such as a crosslinking agent and a catalyst.

polymer

According to embodiments of the present invention, the composition for a hard mask includes a polymer including at least one of a repeating unit represented by the following Chemical Formula 1-1 or Chemical Formula 1-2.

[Formula 1-1]

[Formula 1-2]

In Formulas 1-1 and 2-1, Ar may represent an arylene group including at least one of a hydroxyl group, an ether group, and a thioether group. In Formula 2, X may represent oxygen (O), sulfur (S), or NR ₁ . R ₁ may be an alkyl group having 1 to 4 carbon atoms, alkenyl or alkynyl having 2 to 4 carbon atoms, or an aryl group having 6 to 12 carbon atoms. For example, n may be an integer from 1 to 200.

In some embodiments, the polymer comprising a repeating unit of Formula 1-1 or Formula 1-2 includes a linker unit derived from a linker compound having a high carbon content represented by Formula 2-1 or 2-2 below. may include

[Formula 2-1]

[Formula 2-2]

X in Formula 2-2 is as defined in Formula 1-2.

In the case of the linker compound of Formula 2-1, since four rings are fused to form a multicyclic aromatic unit, the etch resistance of the hard mask can be improved through the high carbon content structure.

In the case of the linker compound of Formula 2-2, it includes a unit derived from carbazole or an analog thereof, and can also implement improved etch resistance through a high carbon content.

In an embodiment, X in Formula 2-2 may include NR ₁ . In this case, R ₁ may be selected from ethyl, vinyl, or phenyl groups, and mechanical properties such as etch resistance may be further improved without excessively inhibiting the solubility of the polymer.

In a preferred embodiment, R ₁ may be a phenyl group. In this case, the high carbon content linker compound may be represented by the following Chemical Formula 2-2-1.

[Formula 2-2-1]

In Formula 1, "Ar" may serve as a main chain or backbone unit of the polymer. According to exemplary embodiments, Ar may be derived from an aromatic compound containing a hydroxyl group, an ether group, or a thioether group.

As an example of the aromatic compound containing a hydroxyl group, the compound represented by following Chemical formula 3 and/or Formula 4 can be mentioned.

[Formula 3]

In Formula 3, Ar ₁ and Ar ₂ may be each independently a phenylene group or a biphenylene group. n ₁ and n ₂ are each independently an integer of 0 to 2, and at least one of n ₁ and n ₂ is 1 or 2.

[Formula 4]

In Formula 4, n ₃ and n ₄ are each independently an integer of 0 or 1, and at least one of n ₃ and n ₄ is 1.

In the case of the compounds of Formula 3 or Formula 4, by including a hydroxyl group, solubility in a solvent, adhesion to a substrate, and reactivity with the above-described linker compound may be improved. In addition, by including the rotatable aryl ring, the flexibility of the hard mask or polymer may be improved, and film-forming properties such as solubility and coatability may be further improved.

For example, as the aromatic compounds containing a hydroxyl group, compounds of Formula 3-1, Formula 3-2, Formula 4-1, Formula 4-2, or Formula 4-3 below may be exemplified. These may be used alone or in combination of two or more.

[Formula 3-1]

[Formula 3-2]

[Formula 4-1]

[Formula 4-2]

[Formula 4-3]

For example, when two hydroxyl groups are staggered from each other through each phenyl ring as shown in Formula 4-3, the effect of increasing solubility through the hydroxyl group may be further improved.

The aromatic compound including the ether group or the thioether group may include a compound represented by the following Chemical Formula 5.

[Formula 5]

In Formula 5, X is oxygen (O) or sulfur (S), and n ₅ and n ₆ are each an integer of 0 to 2. n is an integer from 0 to 3.

The aromatic compound including the ether group or thioether group may have improved solubility in a solvent due to an increase in polarity through electrons around the ether group or thioether group. In addition, through the rotatable structure of an ether group or a thioether group, film-forming properties such as solubility and flatness of a polymer or hard mask can be further improved.

For example, the aromatic compound including an ether group or a thioether group may include at least one of compounds of Formulas 5-1 to 5-4 below.

[Formula 5-1]

[Formula 5-2]

[Formula 5-3]

[Formula 5-4]

In some embodiments, the polymer may be prepared using only the aforementioned hydroxyl group, ether group or thioether group-containing aromatic compound compound and the linker compound of Formula 2-1 or 2-2, and other aromatic compounds Alternatively, the linker compound may not be used in preparing the polymer. Accordingly, it is possible to prevent deterioration of flatness, etch resistance, and solubility due to the addition of other compounds, and to secure desired properties.

However, in one embodiment, other linkers within a range that does not inhibit the effect through the combination of the aforementioned hydroxyl group, ether group or thioether group-containing aromatic compound compound and the linker compound of Formula 2-1 or 2-2 Alternatively, a combination of a main chain unit may be included, and embodiments of the present invention do not necessarily exclude this.

In preparing the polymer, the above-mentioned hydroxyl group, ether group or thioether group-containing aromatic compound compound and the linker compound of Formula 2-1 or 2-2 are, for example, in a molar ratio range of about 1:0.5 to 1:1.5. may be used, but is not necessarily limited thereto.

As represented by Chemical Formula 1, the unit derived from the linker compound and the unit indicated by “Ar” may be substantially alternately repeated with each other and the length of the polymer may be extended. However, Formula 1 indicates that the above units are included together, and does not necessarily limit the bonding order and position.

In one embodiment, the polydispersity index (PDI, Polydispersity index) [weight average molecular weight (Mw) / number average molecular weight (Mn)] of the polymer may be about 1.5 to 6.0, preferably about 1.5 to 3.0 days can In the above range, film forming properties such as coatability and flatness may be improved together with desirable solubility and etch resistance.

The content of the polymer is not particularly limited, but may be, for example, about 5 to 30% by weight of the total weight of the composition for a hard mask, and in one embodiment, about 10 to 30% by weight.

menstruum

The solvent used in the composition for a hard mask according to embodiments of the present invention is not particularly limited, and may include an organic solvent having sufficient solubility in the polycondensate described above. For example, the solvent is propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, ethyl lactate, gamma-butyrolactone. (γ-butyrolactone; GBL), acetyl acetone, and the like.

The content of the solvent is not particularly limited, and may be included in the remaining amount excluding the polycondensate and additional agents to be described later. For example, the solvent may be included in an amount of about 70 to 95% by weight of the total weight of the composition for a hard mask.

additional formulation

Optionally, the composition for a hard mask according to embodiments of the present invention may further include an additional agent such as a crosslinking agent, a catalyst, and a surfactant.

The crosslinking agent is capable of crosslinking the repeating units included in the polymer with each other, and may react with, for example, a hydroxyl group included in the polymer. By the crosslinking agent, the curing characteristics of the composition for a hard mask may be further strengthened.

Examples of the crosslinking agent include melamine, an amino resin, a glycoluryl compound, or a bisepoxy compound.

The crosslinking agent is, for example, an etherified amino resin, such as a methylated or butylated melamine (specifically N-methoxymethyl-melamine or N-butoxymethyl-melamine) and a methylated or butylated melamine urea resin (specific example, Cymel U-65 Resin or UFR 80 Resin), glycoluryl derivative (see Formula 6, specific example, Powderlink 1174), bis (hydroxymethyl)-p represented by Formula 7 -cresol compounds and the like may be included. In addition, a bisepoxy-based compound represented by the following Chemical Formula 8 and a melamine-based compound represented by the following Chemical Formula 9 may also be used as a crosslinking agent.

[Formula 6]

[Formula 7]

[Formula 8]

[Formula 9]

An acid catalyst or a basic catalyst may be used as the catalyst.

The acid catalyst may be a thermally activated acid catalyst. As an example of the acid catalyst, an organic acid such as p-toluene sulfonic acid can be used. As the acid catalyst, a compound of a thermal acid generator (TAG) system may be used. Examples of the thermal acid generator system catalyst include pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadienone, benzointosylate, 2-nitrobenzyltosyl and alkyl esters of organic sulfonic acids.

As the basic catalyst, any one selected from ammonium hydroxide represented by NH ₄ OH or NR ₄ OH (R is an alkyl group) may be used.

When the crosslinking agent is included, the content of the crosslinking agent may be about 1 to 30 parts by weight, preferably about 5 to 20 parts by weight, more preferably about 5 to 10 parts by weight based on 100 parts by weight of the polycondensate.

When the catalyst is included, the content of the catalyst may be about 0.001 to 5 parts by weight, preferably about 0.1 to 2 parts by weight, and more preferably about 0.1 to 1 part by weight based on 100 parts by weight of the polycondensate. can

Within the content range of the crosslinking agent and the catalyst, appropriate crosslinking properties may be obtained without deteriorating etch resistance, heat resistance, solubility, and flatness of the polycondensate.

The composition for a hard mask according to embodiments of the present invention may further include a surfactant to improve surface properties and adhesion of the hard mask. The surfactant may include, but is not limited to, alkylbenzenesulfonate, alkylpyridinium salt, polyethylene glycol, quaternary ammonium salt, and the like. The content of the surfactant may be, for example, about 0.1 to 10 parts by weight based on 100 parts by weight of the polycondensate.

In addition, embodiments of the present invention provide a pattern forming method using the hard mask composition.

According to exemplary embodiments, an etch target layer may be formed on a substrate, and the hard mask composition may be coated and cured on the etch target layer to form a hard mask. A photoresist layer may be formed on the hard mask, and a photoresist pattern may be formed by selectively exposing and developing the photoresist layer. A hard mask pattern may be formed by selectively etching the hard mask using the photoresist pattern.

Thereafter, by selectively removing the etch target layer using the photoresist pattern and the hard mask pattern together as an etch mask, a predetermined target pattern may be formed.

For example, the substrate may include a semiconductor substrate manufactured from a silicon wafer or a germanium wafer. The etch target layer may include an insulating material such as silicon oxide or silicon nitride, a conductive material such as a metal or metal nitride, or a semiconductor material such as polysilicon.

Hereinafter, experimental examples including specific examples and comparative examples are presented to help the understanding of the present invention, but these are merely illustrative of the present invention and do not limit the appended claims, the scope and description of the present invention It is obvious to those skilled in the art that various changes and modifications to the embodiments are possible within the scope of the spirit, and it is natural that such variations and modifications fall within the scope of the appended claims.

Examples and Comparative Examples

A composition for a hard mask of the composition and content (% by weight) described in Table 1 was prepared. In Examples and Comparative Examples, paratoluenesulfonic acid (5 mol% relative to the hydroxyl group-containing aromatic compound) was used as an acid catalyst when forming the polymer (A).

division Polycondensate (A) Solvent (B) Crosslinking agent (C) Catalyst (D) Surfactants
(E) ingredient content ingredient content ingredient content ingredient content ingredient content Example 1 A-1 10 B-1 90 - - - - - - Example 2 A-2 10 B-1 90 - - - - - - Example 3 A-3 10 B-1 90 - - - - - - Example 4 A-4 10 B-1 90 - - - - - - Example 5 A-5 10 B-1 90 - - - - - - Example 6 A-6 10 B-1 90 - - - - - - Example 7 A-1 10 B-1 88 C-1 One D-1 One - - Example 8 A-1 10 B-1 89 - - - - E-1 One Comparative Example 1 A'-1 10 B-1 90 - - - - - - Comparative Example 2 A'-2 10 B-1 90 - - - - - - Comparative Example 3 A'-3 10 B-1 90 - - - - - - Comparative Example 4 A'-4 10 B-1 90 - - - - - -

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 3500)A-1:

,

(1:1 molar ratio) of the copolymer produced by the condensation reaction (weight average molecular weight: 3500)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 1750)A-2:

,

(1: 1 molar ratio) of the copolymer produced by the condensation reaction (weight average molecular weight: 1750)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 3300)A-3:

,

(1:1 molar ratio) of the copolymer produced by the condensation reaction (weight average molecular weight: 3300)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 2250)A-4:

,

(1:1 molar ratio) of the copolymer produced by the condensation reaction (weight average molecular weight: 2250)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 4900)A-5:

,

Copolymer (weight average molecular weight: 4900) produced by condensation reaction of (1:1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 5050)A-6:

,

Copolymer (weight average molecular weight: 5050) produced by condensation reaction of (1:1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 3100)A'-1:

,

(1:1 molar ratio) of the copolymer produced by the condensation reaction (weight average molecular weight: 3100)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 2150)A'-2:

,

Copolymer (weight average molecular weight: 2150) produced by a condensation reaction of (1:1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 1900)A'-3:

,

(1:1 molar ratio) of the copolymer produced by the condensation reaction (weight average molecular weight: 1900)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 4800)A'-4:

,

(1:1 molar ratio) of the copolymer produced by the condensation reaction (weight average molecular weight: 4800)

B: PGMEA

C: N-methoxymethyl-melamine resin

D: p-toluene sulfonic acid-pyridine salt

E: triethylene glycol

Experimental example

Etching resistance, solubility, and flatness of the hard mask layer or hard mask formed of the compositions of Table 1 were evaluated through an evaluation method to be described later. The evaluation results are shown in Table 2 below.

(1) Evaluation of etch resistance

The compositions according to Examples and Comparative Examples were coated on a silicon wafer by spin-coating, respectively, and baked at 200° C. for 60 seconds to form a hard mask layer having a thickness of 1500 Å. A photoresist for ArF is coated on each hard mask layer formed, and after baking at 110°C for 60 seconds, exposure is performed using ASML (XT:1450G, NA 0.93) exposure equipment, and then each is exposed with TMAH (2.38wt% aqueous solution). After development, a line-and-space pattern of 60 nm was obtained.

The photoresist pattern is further cured at 110° C. for 60 seconds, and dry etching is performed on the hard mask layer for 20 seconds using the photoresist pattern and CHF ₃ /CF ₄ mixed gas, respectively, and the cross section is cut with FE-SEM. Each was observed to measure the etching rate to determine the etch resistance to halogen plasma.

<Essence resistance determination>

◎: Etching rate less than 10A/Sec

○: Etching rate 10A/Sec or more and less than 11A/Sec

△: Etching rate 11A/Sec or more and less than 12A/Sec

×: Etching rate 12A/Sec or more

(2) solubility

After stirring the compositions of Examples and Comparative Examples at 50° C. for 1 hour, 1) confirming the dissolved state of the polymer in a warm state (50° C.), cooling to room temperature, 2) at room temperature (25° C.) The dissolved state of the polymer was confirmed, and the mixture was further stirred at room temperature for 6 hours, and 3) the dissolved state of the polymer at room temperature was reconfirmed (25° C.), and solubility was measured.

<Solubility determination>

(double-circle): Undissolved polymer was not visually confirmed in the state left at room temperature.

○: Undissolved polymer was not visually confirmed at room temperature, but a small amount of undissolved polymer was visually confirmed when left at room temperature.

△: Undissolved polymer was not visually confirmed in a warm state, but undissolved polymer was visually confirmed in a room temperature state.

x: A small amount of undissolved polymer was visually confirmed in a heated state.

(3) Flatness evaluation

The compositions of Examples and Comparative Examples were coated on a SiO ₂ wafer substrate including a trench having a width of 10 μm and a depth of 0.50 μm) and dried to form a hard mask film, and the thickness difference between the trench portion and the non-trench portion was measured using a scanning electron microscope. (SEM) was observed to evaluate the flatness.

<Flatness judgment>

◎: thickness difference less than 150 nm

○: thickness difference 150 to 175 nm

△: thickness difference 175 to 200 nm

×: thickness difference greater than 200 nm

division etch resistance solubility flatness Example 1 ◎ ○ ○ Example 2 ◎ ○ ○ Example 3 ◎ ○ ○ Example 4 ◎ ○ ○ Example 5 ○ ◎ ◎ Example 6 ○ ◎ ◎ Example 7 ◎ ○ ◎ Example 8 ◎ ○ ◎ Comparative Example 1 × ◎ ◎ Comparative Example 2 ◎ × × Comparative Example 3 ◎ × × Comparative Example 4 × ◎ ◎

Referring to Table 2, in the case of a hard mask using a linker compound and an aromatic compound according to embodiments of the present invention, etch resistance, solubility, and flatness were improved in a balanced overall manner.

On the other hand, in Comparative Example 1 in which benzaldehyde was used, etch resistance was excessively deteriorated, and in Comparative Example 2 in which naphthyl aldehyde and an aryl-substituted carbazole compound were used, solubility and flatness were excessively reduced.

In Comparative Example 3 in which pyrenol and pyrene aldehyde were used, etch resistance was increased, but solubility and flatness were rapidly deteriorated.

In Comparative Example 4 in which biphenylol and biphenyl aldehyde were used together, solubility and flatness were improved, but etch resistance was excessively decreased.

Claims (10)

a polymer including at least one of repeating units represented by Formula 1-1 or Formula 1-2; and
containing a solvent;
The polymer is a composition for a hard mask comprising a linker unit derived from at least one of the linker compounds represented by the following Chemical Formula 2-1 or 2-2:
[Formula 1-1]

[Formula 1-2]

(In Formulas 1-1 and 1-2, Ar represents an arylene group including at least one of a hydroxyl group, an ether group, or a thioether group,
X represents oxygen (O), sulfur (S) or NR ₁ ,
R ₁ represents an alkyl group having 1 to 4 carbon atoms, alkenyl or alkynyl having 2 to 4 carbon atoms, or an aryl group having 6 to 12 carbon atoms,
n is an integer from 1 to 200)
[Formula 2-1]

[Formula 2-2]

.
delete The composition for a hard mask according to claim 1, wherein the linker compound comprises a compound represented by the following Chemical Formula 2-2-1:
[Formula 2-2-1]

The composition for a hard mask according to claim 1, wherein Ar in Formulas 1-1 and 1-2 is derived from an aromatic compound containing a hydroxyl group, an ether group, or a thioether group.
The composition for a hard mask according to claim 4, wherein the aromatic compound having a hydroxyl group comprises at least one of compounds represented by the following Chemical Formula 3 or Chemical Formula 4:
[Formula 3]

(in Formula 3, Ar ₁ and Ar ₂ are each independently a phenylene group or a biphenylene group, n ₁ and n ₂ are each independently an integer of 0 to 2, and at least one of n ₁ and n ₂ is 1 or 2)
[Formula 4]

(In Formula 4, n ₃ and n ₄ are each independently an integer of 0 or 1, and at least one of n ₃ and n ₄ is 1).
The method according to claim 5, wherein the aromatic compound containing a hydroxyl group is at least selected from the group consisting of compounds represented by the following Chemical Formulas 3-1, 3-2, 4-1, 4-2 and 4-3 A composition for a hard mask comprising one:
[Formula 3-1]

[Formula 3-2]

[Formula 4-1]

[Formula 4-2]

[Formula 4-3]

.
The composition for a hard mask according to claim 4, wherein the aromatic compound containing an ether group or a thioether group includes a compound represented by the following Chemical Formula 5:
[Formula 5]

(In Formula 5, X is oxygen (O) or sulfur (S), n ₅ and n ₆ are each an integer of 0 to 2, and n is an integer of 0 to 3).
The composition for a hard mask according to claim 7, wherein the aromatic compound containing an ether group or a thioether group includes at least one selected from the group consisting of compounds of Formulas 5-1 to 5-4 below:
[Formula 5-1]

[Formula 5-2]

[Formula 5-3]

[Formula 5-4]

The composition for a hard mask according to claim 1, comprising 5 to 30% by weight of the polymer and 70 to 95% by weight of the solvent based on the total weight of the composition.
The composition for a hard mask according to claim 1, further comprising at least one of a crosslinking agent, a catalyst, and a surfactant.