KR102383692B1 - Composition for hard mask - Google Patents

Abstract

Embodiments of the present invention provide a composition for a hard mask comprising a solvent and a polymer including a repeating unit of a specific structure, thereby providing a composition for a hard mask excellent in flatness, coating uniformity, solubility and etch resistance. there is.

Description

Composition for hard mask {COMPOSITION FOR HARD MASK}

The present invention relates to a composition for a hard mask.

For example, in the fields of semiconductor manufacturing, microelectronics, etc., the degree of integration of structures such as circuits, wirings, and insulating patterns is continuously improved. Accordingly, a photolithography process for fine patterning of the structures is being developed together.

In general, a photoresist layer is formed by coating a photoresist on an etch target layer, and a photoresist pattern is formed through exposure and development processes. Then, a predetermined pattern may be formed by partially removing the etch target layer using the photoresist pattern as an etch mask. After image transfer to the etch target layer is performed, the photoresist pattern may be removed through an ashing and/or strip process.

An anti-reflective coating (ARC) layer may be formed between the etch target layer and the photoresist layer in order to suppress resolution degradation due to light reflection during the exposure process. In this case, etching of the ARC layer is added, and accordingly, consumption or etching amount of the photoresist layer or the photoresist pattern may be increased. In addition, when the thickness of the etch target layer increases or the etching amount required to form a desired pattern increases, sufficient etch resistance of the required photoresist layer or photoresist pattern may not be secured.

Accordingly, a resist lower layer may be added between the target layer to be etched and the photoresist layer in order to secure the etch resistance and etch selectivity of the photoresist for forming a desired pattern.

The resist underlayer needs to have sufficient etch resistance (or etch resistance) and heat resistance to, for example, a high-temperature etching process, and also needs to be formed to a uniform thickness by, for example, a spin-on coating process. .

Korean Patent Application Laid-Open No. 10-2010-0082844 discloses an example of a composition for forming a resist underlayer.

Korean Patent Publication No. 10-2010-0082844

One object of the present invention is to provide a composition for a hard mask capable of forming a hard mask having excellent solubility, coating property and etch resistance.

1. A composition for a hard mask comprising a polymer and a solvent including a repeating unit represented by the following formula (1):

[Formula 1]

(In Formula 1, Ar ₁ is a functional group derived from an aromatic compound having 10 to 40 carbon atoms, and Ar ₂ is a functional group derived from an aromatic compound having 6 to 40 carbon atoms).

2. The composition for a hard mask according to the above 1, wherein Ar ₂ of Formula 1 includes at least one selected from the group consisting of Formula Ar ₂ -1 to Formula Ar ₂ -5:

[Formula Ar ₂ -1]

[Formula Ar ₂ -2]

[Formula Ar ₂ -3]

[Formula Ar ₂ -4]

[Formula Ar ₂ -5]

.

.

3. The composition for a hard mask according to the above 1, wherein the polymer including the repeating unit represented by Formula 1 includes a condensation polymer of an aromatic compound having 10 to 40 carbon atoms and a compound represented by Formula 2 below:

[Formula 2]

(In Formula 2, Ar ₃ is a functional group derived from an aromatic compound having 6 to 40 carbon atoms).

4. The composition for a hard mask according to the above 3, wherein the aromatic compound having 6 to 40 carbon atoms includes at least one selected from the group consisting of a hydroxyl group, an alkoxy group, and an amine group.

5. The composition for a hard mask according to 1 above, wherein Ar ₁ is derived from at least one selected from the group consisting of aromatic compounds represented by the following formulas Ar _1-1 to Ar _1-4 :

[Formula Ar ₁ -1]

[Formula Ar ₁ -2]

(In Formula Ar _1-2 , X is -OH, -OR ¹ or -NR ² R ³ , and R ¹ , R ² and R ³ are each independently a hydrogen atom or an alkyl group having 1 to 20 carbon atoms)

[Formula Ar _1-3 ]

(In formula Ar _1-3 , Ar ₄ and Ar ₅ are each independently a phenylene group or a naphthylene group, and n ₁ and n ₂ are each independently an integer of 1 or 2)

[Formula Ar _1-4 ]

(In Formula Ar _1-4 , Y is a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, an alkynyl group having 1 to 20 carbon atoms, or an aryl group having 6 to 25 carbon atoms).

6. The composition for a hard mask according to 1 above, further comprising at least one of a crosslinking agent, a catalyst, or a surfactant.

By using the composition for a hard mask according to embodiments of the present invention, it is possible to form a hard mask with improved solubility, coating properties, and etch resistance at the same time.

The composition for a hard mask according to embodiments of the present invention may include a polymer prepared by condensing an aromatic compound and an aldehyde linker compound including an aromatic-derived functional group and an ether group. The flexibility of the polymer is increased by the rotational properties of the ether group, so that the coating uniformity or flatness of the hardmask film can be improved.

In addition, the composition for a hard mask according to embodiments of the present invention may include a polymer having a structure derived from an aromatic compound having a high carbon content, thereby improving heat resistance and etch resistance.

In addition, a high-resolution photolithography process can be implemented using the hardmask formed from the hardmask composition, and a target pattern having a desired fine line width can be formed.

Embodiments of the present invention provide a composition for a hard mask comprising a polymer and a solvent including a repeating unit of a specific structure.

The present invention can provide a composition for a hard mask excellent in flatness, coating uniformity, solubility and etch resistance by including the polymer including the repeating unit of the specific structure.

The composition for a hard mask may be applied between, for example, a photoresist layer and an etch target layer to form a hard mask layer used as a resist lower layer. The hard mask layer may be partially removed through a photoresist pattern to form a hard mask, and the hard mask may be used as an additional etching mask.

The hardmask layer or hardmask may be used as, for example, a spin-on hardmask (SOH).

Hereinafter, the composition for a hard mask according to embodiments of the present invention will be described in detail. When there is an isomer of the compound or resin represented by the formula used in the present application, the compound or resin represented by the formula means the representative formula including the isomer.

The composition for a hard mask according to embodiments of the present invention includes a polymer and a solvent including a repeating unit represented by the following Chemical Formula 1, and may further include additional agents such as a crosslinking agent, a catalyst, and a surfactant.

<Polymer containing a repeating unit represented by Formula 1>

In the composition for a hard mask according to embodiments of the present invention, a polymer or resin material included in a carbon-based SOH composition known in the art may be used without particular limitation.

According to exemplary embodiments, at least one aromatic compound polymer (eg, a condensation polymer) may be used as a base material of the hardmask composition to ensure heat resistance of the hardmask film.

In embodiments, the polymer may include a repeating unit represented by Formula 1.

[Formula 1]

In Formula 1, Ar ₁ is a functional group derived from an aromatic having 10 to 40 carbon atoms, and Ar ₂ is a functional group derived from an aromatic compound having 6 to 40 carbon atoms.

The present invention can have excellent flatness, coating uniformity, solubility and etch resistance at the same time by including the polymer including the repeating unit represented by Formula 1 above.

Specifically, the repeating unit represented by Formula 1 includes an ether group, and the flexibility of the compound or polymer including the ether group is increased due to the rotational properties of the ether group, so that the flatness of the hardmask film can be improved, and also, hydrogen to the polymer Instead of a hydrogen atom or a hydroxyl group capable of generating a relatively strong attraction such as a bond, an aryloxy group may be included, thereby lowering the viscosity of the composition and improving solubility.

In addition, the polymer including the repeating unit represented by Formula 1 includes an aromatic compound or a condensate of polycyclic aromatic compounds, and accordingly, the carbon content per unit molecule (C-contents: C%) may be increased. Accordingly, the etch resistance or etch resistance of the hard mask including the polymer to an etching gas or an etchant may be improved.

In Formula 1, Ar ₁ may be a functional group derived from an aromatic compound having 10 to 40 carbon atoms, preferably a functional group derived from an aromatic compound having 10 to 25 carbon atoms, and Ar ₂ is a functional group derived from an aromatic compound having 6 to 40 carbon atoms, preferably It may be a functional group derived from an aromatic compound having 6 to 25 carbon atoms.

When the number of carbon atoms of the aromatic compound-derived functional groups Ar ₁ and Ar ₂ exceeds 40, the solubility of the polymer is excessively reduced, and thus flatness and coating uniformity of the hard mask may be reduced. When the number of carbon atoms of Ar ₁ is 10 or less, there is a concern that the etch resistance may decrease due to a decrease in the carbon content.

In some embodiments, Ar ₂ in Formula 1 may include at least one selected from the group consisting of Formulas Ar ₂ -1 to Formula Ar ₂ -5.

[Formula Ar ₂ -1]

[Formula Ar ₂ -2]

[Formula Ar ₂ -3]

[Formula Ar ₂ -4]

[Formula Ar ₂ -5]

.

.

The polymer including a functional group represented by Formula Ar ₂ -1 to Formula Ar ₂ -5 has a high carbon content per unit molecule, and thus is preferable in terms of etch resistance. In addition, since the functional group represented by Formula Ar ₂ -1 to Formula Ar ₂ -5 is connected to an oxygen atom to form an aryloxy group, it is possible to further improve solubility by maintaining an appropriate viscosity.

In some embodiments, the polymer including the repeating unit represented by Formula 1 may include a condensation polymer of an aromatic compound having 10 to 40 carbon atoms and a compound represented by Formula 2 below. The polymer comprises a condensation polymer of an aldehyde linker compound represented by the following formula (2) containing an aromatic-derived functional group and an ether group, thereby improving coating uniformity according to the rotational characteristics of the ether group and improving solubility due to the aryloxy group. Composition for a hard mask can be given to

[Formula 2]

In Formula 2, Ar ₃ is a functional group derived from an aromatic compound having 6 to 40 carbon atoms.

For example, the compound represented by Chemical Formula 2 may be exemplified by the following Chemical Formulas 2-1 to 2-5.

[Formula 2-1]

[Formula 2-2]

[Formula 2-3]

[Formula 2-4]

[Formula 2-5]

In some embodiments, the aromatic compound having 10 to 40 carbon atoms forming the condensate with the compound represented by Formula 2 may include a hydroxyl group, an alkoxy group and/or an amine group, and thus the above-described aldehyde linker compound A polycondensate can be easily prepared.

In an embodiment, Ar ₁ of Formula ₁ may be derived from at least one selected from the group consisting of aromatic compounds represented by Formulas Ar _1-1 to Ar 1-4.

[Formula Ar ₁ -1]

[Formula Ar ₁ -2]

In Formula Ar _1-2 , X is -OH, -OR ¹ or -NR ² R ³ , and R ¹ , R ² and R ³ are each independently a hydrogen atom or an alkyl group having 1 to 20 carbon atoms.

[Formula Ar _1-3 ]

In Formula Ar _1-3 , Ar ₄ and Ar ₅ are each independently a phenylene group or a naphthylene group, and n ₁ and n ₂ are each independently an integer of 1 or 2.

[Formula Ar _1-4 ]

In Formula Ar _1-4 , Y is a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, an alkynyl group having 1 to 20 carbon atoms, or an aryl group having 6 to 25 carbon atoms.

In embodiments of the present invention, the total amount of the polymer including the repeating unit represented by Formula 1 is not particularly limited, but may be, for example, about 5 to 30% by weight based on the total weight of the composition for a hard mask, When the range is satisfied, the effect of the present invention may be most excellent.

In one embodiment, the weight average molecular weight of the polymer including the repeating unit represented by Chemical Formula 1 may be, for example, in the range of about 1,500 to 10,000, and desirable solubility, etch resistance and flatness are ensured in the range. can be

In one embodiment, the polydispersity index (PDI, Polydispersity index) [weight average molecular weight (Mw) / number average molecular weight (Mn)] of the polymer including the repeating unit represented by Formula 1 may be about 1.5 to 6.0. and preferably about 1.5 to 3.0. In the above range, desirable solubility, etch resistance, and flatness may be secured together.

If the polydispersity index [weight average molecular weight (Mw) / number average molecular weight (Mn)] is included within the above range, it is preferable because the effect of the compound including the repeating unit represented by the above-mentioned formula 1 is more excellent. .

<solvent>

The solvent used in the composition for a hard mask according to embodiments of the present invention is not particularly limited, and may include an organic solvent having sufficient solubility in the polymer of the aromatic compound described above. For example, the solvent is propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, ethyl lactate, gamma-butyrolactone. (γ-butyrolactone; GBL), acetyl acetone, and the like.

The content of the solvent is not particularly limited, and may be included in the remaining amount excluding the polymer of the aromatic compound and additional agents to be described later. For example, the solvent may be included in an amount of 50 to 90% by weight of the total weight of the composition for a hard mask, and when the above range is satisfied, the above-described effects of the present invention may be effectively exhibited.

<Additional Agents>

Optionally, the composition for a hard mask according to embodiments of the present invention may further include an additional agent such as a crosslinking agent, a catalyst, and a surfactant.

The crosslinking agent is capable of crosslinking the repeating unit of the polymer of the aromatic compound, and may react with, for example, a hydroxyl group of the polymer. By the crosslinking agent, the curing characteristics of the composition for a hard mask may be further strengthened.

Examples of the crosslinking agent include melamine, an amino resin, a glycoluryl compound, or a bisepoxy compound.

The crosslinking agent is, for example, an etherified amino resin, such as a methylated or butylated melamine (specifically N-methoxymethyl-melamine or N-butoxymethyl-melamine) and a methylated or butylated melamine urea resin (specific example, Cymel U-65 Resin or UFR 80 Resin), glycoluryl derivative (see Formula 3, specific example, Powderlink 1174), bis (hydroxymethyl)-p represented by Formula 4 -cresol compounds and the like may be included. In addition, a bis-epoxy compound represented by the following Chemical Formula 5 and a melamine-based compound represented by the following Chemical Formula 6 may be used as a crosslinking agent.

[Formula 3]

[Formula 4]

[Formula 5]

[Formula 6]

An acid catalyst or a basic catalyst may be used as the catalyst.

The acid catalyst may be a thermally activated acid catalyst. As an example of the acid catalyst, an organic acid such as p-toluene sulfonic acid can be used. As the acid catalyst, a compound of a thermal acid generator (TAG) system may be used. Examples of the thermal acid generator system catalyst include pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadienone, benzointosylate, 2-nitrobenzyltosyl and alkyl esters of organic sulfonic acids.

As the basic catalyst, any one selected from ammonium hydroxide represented by NH ₄ OH or NR ₄ OH (R is an alkyl group) may be used.

When the crosslinking agent is included, the content of the crosslinking agent may be about 1 to 30 parts by weight, preferably about 5 to 20 parts by weight, more preferably about 5 to 10 parts by weight based on 100 parts by weight of the polymer of the aromatic compound. there is. When the catalyst is included, the amount of the catalyst may be about 0.001 to 5 parts by weight, preferably about 0.1 to 2 parts by weight, and more preferably about 0.1 to 1 parts by weight based on 100 parts by weight of the polymer of the aromatic compound. It may be parts by weight.

Within the content range of the crosslinking agent and the catalyst, appropriate crosslinking properties may be obtained without deteriorating the etch resistance, heat resistance, and flatness of the polymer of the aromatic compound.

The composition for a hard mask according to embodiments of the present invention may further include a surfactant to improve surface properties and adhesion of the hard mask. The surfactant may include, but is not limited to, alkylbenzenesulfonate, alkylpyridinium salt, polyethylene glycol, quaternary ammonium salt, and the like. The content of the surfactant may be, for example, about 0.1 to 10 parts by weight based on 100 parts by weight of the polymer of the aromatic compound.

Hereinafter, experimental examples including specific examples and comparative examples are presented to help the understanding of the present invention, but these are merely illustrative of the present invention and do not limit the appended claims, the scope and description of the present invention It is obvious to those skilled in the art that various changes and modifications to the embodiments are possible within the scope of the spirit, and it is natural that such variations and modifications fall within the scope of the appended claims.

Examples and Comparative Examples

A composition for a hard mask of the composition and content (% by weight) described in Table 1 was prepared. In Examples and Comparative Examples, para-toluenesulfonic acid (5 mol% relative to the aromatic compound) was used as an acid catalyst when forming the polymer (A).

division Polymer (A) Solvent (B) Crosslinking agent (C) Catalyst (D) Surfactants
(E) ingredient content ingredient content ingredient content ingredient content ingredient content Example 1 A-1 10 B-1 90 - - - - - - Example 2 A-2 10 B-1 90 - - - - - - Example 3 A-3 10 B-1 90 - - - - - - Example 4 A-4 10 B-1 90 - - - - - - Example 5 A-5 10 B-1 90 - - - - - - Example 6 A-6 10 B-1 90 - - - - - - Example 7 A-7 10 B-1 90 - - - - - - Example 8 A-1 3 B-1 97 - - - - - - Example 9 A-1 35 B-1 65 - - - - - - Example 10 A-1 10 B-1 88 C-1 One D-1 One - - Example 11 A-1 10 B-1 89 - - - - E-1 One Comparative Example 1 A'-1 10 B-1 90 - - - - - - Comparative Example 2 A'-2 10 B-1 90 - - - - - - Comparative Example 3 A'-3 10 B-1 90 - - - - - - Comparative Example 4 A'-4 10 B-1 90 - - - - - - Comparative Example 5 A'-5 10 B-1 90 - - - - - -

,

를 축합 중합하여 생성된 중합체(중량평균분자량: 5,100, PDI: 2.3)A-1:

,

Polymer produced by condensation polymerization of (weight average molecular weight: 5,100, PDI: 2.3)

,

를 축합 중합하여 생성된 중합체(중량평균분자량: 5,500, PDI: 2.1)A-2:

,

Polymer produced by condensation polymerization of (weight average molecular weight: 5,500, PDI: 2.1)

,

를 축합 중합하여 생성된 중합체(중량평균분자량: 5,600, PDI: 2.7)A-3:

,

Polymer produced by condensation polymerization of (weight average molecular weight: 5,600, PDI: 2.7)

,

를 축합 중합하여 생성된 중합체(중량평균분자량: 4,800, PDI: 1.9)A-4:

,

Polymer produced by condensation polymerization of (weight average molecular weight: 4,800, PDI: 1.9)

,

를 축합 중합하여 생성된 중합체(중량평균분자량: 3,500, PDI: 1.8)A-5:

,

Polymer produced by condensation polymerization of (weight average molecular weight: 3,500, PDI: 1.8)

,

를 축합 중합하여 생성된 중합체(중량평균분자량: 2,300, PDI: 2.1)A-6:

,

Polymer produced by condensation polymerization of (weight average molecular weight: 2,300, PDI: 2.1)

,

를 축합 중합하여 생성된 중합체(중량평균분자량: 1,900, PDI: 2.5)A-7:

,

Polymer produced by condensation polymerization of (weight average molecular weight: 1,900, PDI: 2.5)

,

를 축합 중합하여 생성된 중합체(중량평균분자량: 3,800, PDI: 2.5)A'-1:

,

Polymer produced by condensation polymerization of (weight average molecular weight: 3,800, PDI: 2.5)

,

를 축합 중합하여 생성된 중합체(중량평균분자량: 2,800, PDI: 2.1)A'-2:

,

Polymer produced by condensation polymerization of (weight average molecular weight: 2,800, PDI: 2.1)

,

를 축합 중합하여 생성된 중합체(중량평균분자량: 1,900, PDI: 2.5)A'-3:

,

Polymer produced by condensation polymerization of (weight average molecular weight: 1,900, PDI: 2.5)

,

를 축합 중합하여 생성된 중합체(중량평균분자량: 2,300, PDI: 3.1)A'-4:

,

Polymer produced by condensation polymerization of (weight average molecular weight: 2,300, PDI: 3.1)

,

를 축합 중합하여 생성된 중합체(중량평균분자량: 5,900, PDI: 2.3)A'-5:

,

Polymer produced by condensation polymerization of (weight average molecular weight: 5,900, PDI: 2.3)

B-1: PGMEA

C-1: N-methoxymethyl-melamine resin

D-1: p-toluene sulfonic acid-pyridine salt

E-1: triethylene glycol

Experimental example

Solubility, flatness, and etch resistance of the hard mask layer or hard mask formed of the compositions of Table 1 were evaluated through an evaluation method to be described later. The evaluation results are shown in Table 2 below.

(1) solubility

After stirring the compositions of Examples and Comparative Examples at 50° C. for 1 hour, 1) confirming the dissolved state of the polymer in a warm state (50° C.), cooling to room temperature, and immediately, 2) at room temperature state (25° C.) ) was confirmed, and further stirred at room temperature for 6 hours, 3) reconfirmed by reconfirming the dissolved state of the polymer at room temperature (25° C.), and solubility was measured.

<Solubility determination>

(double-circle): Undissolved polymer was not visually confirmed in the state left at room temperature.

○: Undissolved polymer was not visually confirmed at room temperature, but a small amount of undissolved polymer was visually confirmed when left at room temperature.

△: Undissolved polymer was not visually confirmed in a warm state, but undissolved polymer was visually confirmed in a room temperature state.

x: A small amount of undissolved polymer was visually confirmed in a heated state.

(2) Flatness evaluation

The compositions of Examples and Comparative Examples were coated on a SiO ₂ wafer substrate including a trench having a width of 10 μm and a depth of 0.50 μm) and dried to form a hard mask film, and the thickness difference between the trench portion and the non-trench portion was measured using a scanning electron microscope. (SEM) was observed to evaluate the flatness.

<Flatness judgment>

◎: thickness difference less than 150 nm

○: thickness difference 150 to 175 nm

Δ: thickness difference 175 to 200 nm

×: thickness difference greater than 200 nm

(3) Evaluation of etch resistance

The compositions according to Examples and Comparative Examples were coated on a silicon wafer by spin-coating, respectively, and baked at 200° C. for 60 seconds to form a film having a thickness of 1500 Å. After coating the photoresist for ArF on each formed film, baking at 110°C for 60 seconds, exposure using ASML (XT:1450G, NA 0.93) exposure equipment, and developing each with TMAH (2.38wt% aqueous solution) A line-and-space pattern of 60 nm was obtained.

The obtained patterned specimen was further cured at 110° C. for 60 seconds, and the specimen was dry etched for 20 seconds using a CHF ₃ /CF ₄ mixed gas, respectively, and the etching rate was measured by observing the cross section with FE-SEM. Etching resistance to halogen plasma was determined.

<Determination of etch resistance>

◎: Etching rate less than 10A/Sec

○: Etching rate 10A/Sec or more and less than 11A/Sec

△: Etching rate 11A/Sec or more and less than 12A/Sec

×: Etching rate 12A/Sec or more

division solubility flatness etch resistance Example 1 ◎ ◎ ◎ Example 2 ◎ ◎ ○ Example 3 ◎ ◎ ◎ Example 4 ◎ ◎ ○ Example 5 ◎ ◎ ○ Example 6 ○ ○ ◎ Example 7 ○ ○ ◎ Example 8 ◎ ○ ○ Example 9 ○ ○ ◎ Example 10 ◎ ◎ ◎ Example 11 ◎ ◎ ◎ Comparative Example 1 △ ○ ○ Comparative Example 2 △ △ ○ Comparative Example 3 × × ◎ Comparative Example 4 × × ◎ Comparative Example 5 ○ ○ ×

Referring to Table 2, in the case of Examples in which the polymer including the repeating unit represented by Formula 1 disclosed in the present application was used, overall solubility, flatness, and etch resistance were excellent compared to Comparative Examples.

In the case of Example 10, the etch resistance evaluation result was marked as ◎ as in the case of Example 1, but by using the crosslinking agent and catalyst together, the etch resistance was additionally improved by improving the degree of crosslinking compared to the case of Example 1 increased

In the case of Example 8, there was a disadvantage in that it was difficult to obtain a desired thickness when the hard mask layer or hard mask was formed because the content of the polymer (A) was small.

In the case of Example 9, the content of the polymer (A) was high, and the solubility and flatness effect were somewhat inferior compared to other examples, and the coating property was somewhat poor.

Claims (6)

A composition for a hard mask, comprising a solvent and a polymer comprising an aryloxy group directly bonded to a benzene ring, and a repeating unit represented by the following formula (1):
[Formula 1]

(In Formula 1, Ar ₁ is a functional group derived from an aromatic compound having 10 to 40 carbon atoms, -OAr ₂ is an aryloxy group, and Ar ₂ is a functional group derived from an aromatic compound having 6 to 40 carbon atoms).
The composition for a hard mask according to claim 1, wherein Ar ₂ of Formula 1 includes at least one selected from the group consisting of Formula Ar ₂ -1 to Formula Ar ₂ -5:
[Formula Ar ₂ -1]

[Formula Ar ₂ -2]

[Formula Ar ₂ -3]

[Formula Ar ₂ -4]

[Formula Ar ₂ -5]

.
The composition for a hard mask according to claim 1, wherein the polymer including the repeating unit represented by Formula 1 includes a condensation polymer of an aromatic compound having 10 to 40 carbon atoms and a compound represented by Formula 2 below:
[Formula 2]

(In Formula 2, Ar ₃ is a functional group derived from an aromatic compound having 6 to 40 carbon atoms).
The composition for a hard mask according to claim 3, wherein the aromatic compound having 6 to 40 carbon atoms includes at least one selected from the group consisting of a hydroxyl group, an alkoxy group, and an amine group.
The composition for a hard mask according to claim 1, wherein Ar ₁ is derived from at least one selected from the group consisting of aromatic compounds represented by the following formulas Ar _1-1 to Ar _1-4 :
[Formula Ar ₁ -1]

[Formula Ar ₁ -2]

(In Formula Ar _1-2 , X is -OH, -OR ¹ or -NR ² R ³ , and R ¹ , R ² and R ³ are each independently a hydrogen atom or an alkyl group having 1 to 20 carbon atoms)
[Formula Ar _1-3 ]

(In formula Ar _1-3 , Ar ₄ and Ar ₅ are each independently a phenylene group or a naphthylene group, and n ₁ and n ₂ are each independently an integer of 1 or 2)
[Formula Ar _1-4 ]

(In Formula Ar _1-4 , Y is a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, an alkynyl group having 1 to 20 carbon atoms, or an aryl group having 6 to 25 carbon atoms).
The composition for a hard mask according to claim 1, further comprising at least one of a crosslinking agent, a catalyst, and a surfactant.