KR102389247B1 - Composition for hard mask - Google Patents

Abstract

The present invention provides a composition for a hard mask comprising a polymer including a repeating unit to which a carbazole unit and a fluorene unit are bonded, and a solvent. A hard mask having improved etch resistance may be formed by using the composition for a hard mask.

Description

Composition for hard mask {COMPOSITION FOR HARD MASK}

The present invention relates to a composition for a hard mask. More particularly, the present invention relates to a composition for a hard mask comprising a polymer containing an aromatic ring.

For example, in the fields of semiconductor manufacturing, microelectronics, etc., the degree of integration of structures such as circuits, wirings, and insulating patterns is continuously improved. Accordingly, a photolithography process for fine patterning of the structures is being developed together.

In general, a photoresist layer is formed by coating a photoresist on an etch target layer, and a photoresist pattern is formed through exposure and development processes. Then, a predetermined pattern may be formed by partially removing the etch target layer using the photoresist pattern as an etch mask. After image transfer to the etch target layer is performed, the photoresist pattern may be removed through an ashing and/or strip process.

An anti-reflective coating (ARC) layer may be formed between the etch target layer and the photoresist layer in order to suppress resolution degradation due to light reflection during the exposure process. In this case, etching of the ARC layer is added, and accordingly, consumption or etching amount of the photoresist layer or the photoresist pattern may be increased. In addition, when the thickness of the etch target layer increases or the etching amount required to form a desired pattern increases, sufficient etch resistance of the required photoresist layer or photoresist pattern may not be secured.

Accordingly, a resist lower layer may be added between the target layer to be etched and the photoresist layer in order to secure the etch resistance and etch selectivity of the photoresist for forming a desired pattern.

The resist underlayer needs to have sufficient etch resistance (or etch resistance) and heat resistance to, for example, a high-temperature etching process, and accordingly, the structure of the polymer included in the resist underlayer is appropriately designed.

A plurality of aromatic compounds may be condensed to increase the etch resistance of the polymer. However, as the synthesis route of the aromatic compound or polymer is added, the process cost increases and the yield may decrease. In addition, as the etch resistance of the polymer increases, the film-forming properties may deteriorate.

Korean Patent Application Laid-Open No. 10-2010-0082844 discloses an example of a composition for forming a resist underlayer.

Korean Patent Publication No. 10-2010-0082844

An object of the present invention is to provide a composition for a hard mask capable of forming a hard mask having excellent process efficiency, etching properties, and film formation properties.

One object of the present invention is to provide a pattern forming method using the composition for a hard mask.

1. A polymer comprising a repeating unit to which a carbazole unit and a fluorene unit are bonded; and a solvent, a composition for a hard mask.

2. The composition for a hard mask according to the above 1, wherein in the polymer, the carbazole unit and the fluorene unit are directly connected to each other.

3. The composition for a hard mask according to the above 1, wherein the polymer includes a repeating unit derived from a compound represented by the following formula (1):

[Formula 1]

(In Formula 1, R ₁ and R ₂ are each independently hydrogen, an alkyl group having 1 to 4 carbon atoms, an unsaturated aliphatic hydrocarbon group having 2 to 4 carbon atoms, or an aromatic hydrocarbon group having 6 to 20 carbon atoms).

4. The composition for a hard mask according to the above 3, wherein the polymer includes a repeating unit derived from at least one selected from the group consisting of compounds represented by the following Chemical Formulas 1-1 to 1-4:

[Formula 1-1]

[Formula 1-2]

[Formula 1-3]

[Formula 1-4]

5. The composition for a hard mask according to the above 3, wherein the polymer comprises at least one of repeating units represented by the following Chemical Formula 2, Chemical Formula 3, or Chemical Formula 4:

[Formula 2]

[Formula 3]

(In Formula 3, R ₃ is hydrogen, an alkyl group having 1 to 4 carbon atoms, substituted or unsubstituted phenyl, naphthyl, anthracenyl, biphenyl, or stilbenyl)

[Formula 4]

(In Formula 4, Ar is substituted or unsubstituted phenylene, naphthylene, anthracenylene, biphenylene, or stilbenylene)

6. In the above 5, in Formula 4, Ar is derived from a compound represented by Formula 5 below. Composition for hard mask:

[Formula 5]

(In Formula 5, R ₄ and R ₅ are each independently hydrogen, methyl, or ethyl).

7. The composition for a hard mask according to the above 1, wherein the content of the polymer is 10 to 50% by weight based on the total weight of the composition.

8. The composition for a hard mask according to 1 above, further comprising at least one of a crosslinking agent, a catalyst, or a surfactant

9. A pattern forming method using a resist underlayer film formed from the hardmask composition of any one of 1 to 8 above.

By using the composition for a hard mask according to embodiments of the present invention, a hard mask having excellent etch resistance and improved process efficiency and yield may be formed.

The composition for a hard mask according to exemplary embodiments may include a polymer including a repeating unit to which a carbazole unit and a fluorene unit are bonded. The polymer may implement improved etch resistance through a high carbon content. In addition, two carbazole units may be included in one fluorene unit, and in this case, more improved etch resistance may be implemented.

The polymer or repeating unit is more easily synthesized than the conventional composite structure of fluorene/aromatic compound, and can significantly reduce process efficiency and cost.

The polymer may further include a linker unit, and in this case, solubility of the polymer and coatability of the hard mask may be improved.

In addition, a high-resolution photolithography process can be implemented using the hardmask formed from the hardmask composition, and a target pattern having a desired fine line width can be formed.

Embodiments of the present invention include a polymer including a repeating unit to which a carbazole unit and a fluorene unit are bonded, thereby providing a composition for a hard mask with improved etch resistance and improved process efficiency.

The hardmask composition may be applied between, for example, a photoresist layer and an etch target layer to form a hardmask layer used as a resist lower layer. The hard mask layer may be partially removed through a photoresist pattern to form a hard mask, and the hard mask may be used as an additional etching mask.

The hardmask layer or hardmask may be used as, for example, a spin-on hardmask (SOH).

In addition, embodiments of the present invention provide a pattern forming method using a hard mask formed from the hard mask composition.

Hereinafter, the composition for a hard mask according to embodiments of the present invention will be described in detail. When there is an isomer of the compound or resin represented by the formula used in the present application, the compound or resin represented by the formula means the representative formula including the isomer.

The composition for a hard mask according to embodiments of the present invention includes a polymer (hereinafter, abbreviated as "polymer") including a repeating unit to which a carbazole unit and a fluorene unit are bonded, and a solvent, and a crosslinking agent, catalyst, etc. Additional agents may be further included.

polymer

According to exemplary embodiments, the polymer of the composition for a hard mask may include a repeating unit in which a carbazole unit and a fluorene unit are bonded.

As heterogeneous high-carbon aromatic units are included, the hardmask including the polymer may exhibit significantly improved etch resistance.

As used herein, the term “carbon content” may mean a ratio of the number of carbon masses to the total number of masses per molecule of a compound.

As used herein, the term "carbazole unit" is used to encompass not only compounds in which hydrogen is bonded to the nitrogen atom of carbazole, but also compounds in which other substituents are bonded instead of hydrogen.

According to exemplary embodiments, the carbazole unit and the fluorene unit may be directly connected or bonded to each other. In some embodiments, two carbazole units may be bonded to the fluorene unit. In some embodiments, the chains of the polymer may be crosslinked and extended through the two carbazole units. The packing density of the polymer is increased by the carbazole unit, so that the etch resistance of the polymer may be further improved.

According to exemplary embodiments, the polymer is derived from a compound to which a carbazole unit and a fluorene unit are directly bonded, and the polymer may include a repeating unit derived from a compound represented by Formula 1 below.

[Formula 1]

In Formula 1, R ₁ and R ₂ are each independently hydrogen, an alkyl group having 1 to 4 carbon atoms, an unsaturated aliphatic hydrocarbon group having 2 to 4 carbon atoms (eg, alkenyl or alkynyl), or an aromatic group having 6 to 20 carbon atoms. It may represent a hydrocarbon group.

The aromatic hydrocarbon group having 6 to 20 carbon atoms may include a hetero atom, and may include a substituted or unsubstituted aryl ring.

As used herein, the term 'substituted' refers to, but is not limited to, a hydrogen atom in a compound, a halogen atom (F, Br, Cl, or I), a hydroxy group, an alkoxy group, a nitro group, a cyano group, an amino group, an azido group , amidino group, hydrazino group, hydrazono group, carbonyl group, carbamyl group, thiol group, ester group, carboxyl group, sulfonic acid group, phosphate group, C1-C20 alkyl group, C2-C20 alkenyl group, C2-C20 alkynyl group , C6-C30 aryl group, C7-C30 arylalkyl group, C1-C4 alkoxy group, C1-C20 heteroalkyl group, C3-C20 heteroarylalkyl group, C3-C30 cycloalkyl group, C3-C15 cycloalkenyl group , means substituted with a substituent selected from a C6-C15 cycloalkynyl group, a C2-C30 heterocycloalkyl group, or a combination thereof.

In some embodiments, the polymer may include a repeating unit derived from at least one of compounds represented by the following Chemical Formulas 1-1 to 1-4.

[Formula 1-1]

[Formula 1-2]

[Formula 1-3]

[Formula 1-4]

In some embodiments, the polymer may have a structure in which the compound represented by Formula 1 is continuously crosslinked. In this case, the polymer may include a repeating unit represented by Formula 2 below.

[Formula 2]

In some embodiments, the polymer may be produced by polycondensation of a linker compound with the compound represented by Chemical Formula 1. In this case, the polymer may include a repeating unit represented by Formula 3 below.

[Formula 3]

In Formula 3, R ₃ may be hydrogen, an alkyl group having 1 to 4 carbon atoms, substituted or unsubstituted phenyl, naphthyl, anthracenyl, biphenyl, or stilbenyl.

In this case, the polymer may be produced through a polycondensation reaction of the compound represented by Formula 1 and an aldehyde compound (eg, R ₃ CHO) or a synthetic equivalent thereof (eg, an acetal compound).

In some embodiments, the polymer may include a repeating unit represented by Formula 4 below.

[Formula 4]

For example, the polymer may be produced through a polycondensation reaction of the compound represented by Formula 1 and the compound represented by Formula 5 below.

[Formula 5]

In Formulas 4 and 5, Ar may represent substituted or unsubstituted phenylene, naphthylene, anthracenylene, biphenylene, or stilbenylene. R ₄ and R ₅ may each independently represent hydrogen, methyl or ethyl.

Examples of the compound represented by the formula (5) include a compound represented by the following formula (5-1).

[Formula 5-1]

For example, as a diether compound such as Formula 5-1 is incorporated into the structure of the polymer (eg, into the main chain), the linearity and flexibility of the polymer is increased, and solubility in the composition for a hard mask is enhanced. can be

In some embodiments, the compound represented by Formula 1 and the additional aromatic compound may be polymerized together. The aromatic compound may be appropriately selected within a range that does not excessively impair film-forming properties such as coatability and solubility of the polymer.

For example, the additional aromatic compound may include biphenylol and/or (bis)phenol fluorene, thereby further improving the etch resistance of the polymer or hardmask.

In some embodiments, the content of the polymer is not particularly limited, but may be, for example, about 10 to 50% by weight of the total weight of the composition for a hard mask.

In some embodiments, the weight average molecular weight of the polymer may be in the range of, for example, about 2,000 to 10,000, and desirable heat resistance, etch resistance and solubility may be secured together in the above range.

In some embodiments, the polydispersity index (PDI) of the polymer [weight average molecular weight (Mw) / number average molecular weight (Mn)] may be about 1.5 to 6.0, preferably about 1.8 to 4.0 can be In the above range, desirable heat resistance, etch resistance and flatness may be secured together.

menstruum

The solvent used in the composition for a hard mask according to embodiments of the present invention is not particularly limited, and may include an organic solvent having sufficient solubility in the polymer of the aromatic compound described above. For example, the solvent is propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, ethyl lactate, gamma-butyrolactone. (γ-butyrolactone; GBL), acetyl acetone, and the like.

The content of the solvent is not particularly limited, and may be included in the remaining amount excluding the polymer of the aromatic compound and additional agents to be described later. For example, the solvent may be included in an amount of 30 to 90% by weight of the total weight of the composition for a hard mask.

additional formulation

Optionally, the composition for a hard mask according to embodiments of the present invention may further include an additional agent such as a crosslinking agent, a catalyst, and a surfactant.

The crosslinking agent may crosslink repeating units of the polymer or between polymers. By the crosslinking agent, the curing characteristics of the composition for a hard mask may be further strengthened.

Examples of the crosslinking agent include melamine, an amino resin, a glycoluryl compound, or a bisepoxy compound.

The crosslinking agent is, for example, an etherified amino resin, such as a methylated or butylated melamine (specifically N-methoxymethyl-melamine or N-butoxymethyl-melamine) and a methylated or butylated melamine urea resin (specific example, Cymel U-65 Resin or UFR 80 Resin), glycoluryl fluid (see Formula 6, specific example, Powderlink 1174), bis (hydroxymethyl)-p represented by Formula 7 -cresol compounds and the like may be included. In addition, a bis-epoxy compound represented by the following Chemical Formula 8 and a melamine-based compound represented by the following Chemical Formula 9 may also be used as a crosslinking agent.

[Formula 6]

[Formula 7]

[Formula 8]

[Formula 9]

An acid catalyst or a basic catalyst may be used as the catalyst.

As an example of the acid catalyst, an organic acid such as p-toluene sulfonic acid can be used. As the acid catalyst, a compound of a thermal acid generator (TAG) system may be used. Examples of the thermal acid generator system catalyst include pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadienone, benzointosylate, 2-nitrobenzyltosyl and alkyl esters of organic sulfonic acids.

As the basic catalyst, any one selected from ammonium hydroxide represented by NH ₄ OH or NR ₄ OH (R is an alkyl group) may be used.

When the crosslinking agent is included, the content of the crosslinking agent may be about 1 to 30 parts by weight, preferably about 5 to 20 parts by weight, more preferably about 5 to 10 parts by weight based on 100 parts by weight of the polymer. When the catalyst is included, the amount of the catalyst may be about 0.001 to 5 parts by weight, preferably about 0.1 to 2 parts by weight, and more preferably about 0.1 to 1 part by weight based on 100 parts by weight of the polymer. there is.

Within the content range of the crosslinking agent and the catalyst, appropriate crosslinking properties can be obtained without deteriorating the etch resistance and film forming properties of the polymer.

The composition for a hard mask according to embodiments of the present invention may further include a surfactant to improve surface properties and adhesion of the hard mask. The surfactant may include, but is not limited to, alkylbenzenesulfonate, alkylpyridinium salt, polyethylene glycol, quaternary ammonium salt, and the like. The content of the surfactant may be, for example, about 0.1 to 10 parts by weight based on 100 parts by weight of the polymer.

In addition, embodiments of the present invention provide a pattern forming method using the hard mask composition.

According to exemplary embodiments, an etch target layer may be formed on a substrate, and the hard mask composition may be coated and cured on the etch target layer to form a hard mask. A photoresist layer may be formed on the hard mask, and a photoresist pattern may be formed by selectively exposing and developing the photoresist layer. A hard mask pattern may be formed by selectively etching the hard mask using the photoresist pattern.

Thereafter, by selectively removing the etch target layer using the photoresist pattern and the hard mask pattern together as an etch mask, a predetermined target pattern may be formed.

For example, the substrate may include a semiconductor substrate manufactured from a silicon wafer or a germanium wafer. The etch target layer may include an insulating material such as silicon oxide or silicon nitride, a conductive material such as a metal or metal nitride, or a semiconductor material such as polysilicon.

Hereinafter, experimental examples including specific examples and comparative examples are presented to help the understanding of the present invention, but these are merely illustrative of the present invention and do not limit the appended claims, the scope and description of the present invention It is apparent to those skilled in the art that various changes and modifications to the embodiments are possible within the scope of the spirit, and it is natural that such variations and modifications fall within the scope of the appended claims.

Examples and Comparative Examples

A composition for a hard mask of the composition and content (% by weight) described in Table 1 was prepared. In Examples and Comparative Examples, para-toluenesulfonic acid (5 mol% relative to the aromatic compound) was used as an acid catalyst when forming the polymer (A).

division aromatic compounds
Polymer (A) Solvent (B) Crosslinking agent (C) Catalyst (D) Surfactants
(E) ingredient content ingredient content ingredient content ingredient content ingredient content Example 1 A-1 10 B-1 90 - - - - - - Example 2 A-2 10 B-1 90 - - - - - - Example 3 A-3 10 B-1 90 - - - - - - Example 4 A-4 10 B-1 90 - - - - - - Example 5 A-5 10 B-1 90 - - - - - - Example 6 A-6 10 B-1 90 - - - - - - Example 7 A-7 10 B-1 88 - - - - - - Example 8 A-8 10 B-1 89 - - - - - - Example 9 A-1 10 B-1 90 C-1 One D-1 One - - Example 10 A-1 10 B-1 90 - - - - E-1 One Comparative Example 1 A'-1 10 B-1 90 - - - - - - Comparative Example 2 A'-2 10 B-1 90 - - - - - - Comparative Example 3 A'-3 10 B-1 90 - - - - - - Comparative Example 4 A'-4 10 B-1 90 - - - - - - Comparative Example 5 A'-5 10 B-1 90 - - - - - -

,

(1:1 몰비율)의 중합반응으로 생성된 공중합체(중량평균분자량: 2150)A-1:

,

Copolymer produced by polymerization of (1:1 molar ratio) (weight average molecular weight: 2150)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 2200)A-2:

,

Copolymer (weight average molecular weight: 2200) produced by condensation reaction of (1:1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 2500)A-3:

,

(1:1 molar ratio) of the copolymer produced by the condensation reaction (weight average molecular weight: 2500)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 3130)A-4:

,

(1:1 molar ratio) of the copolymer produced by the condensation reaction (weight average molecular weight: 3130)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 2350)A-5:

,

Copolymer (weight average molecular weight: 2350) produced by condensation reaction of (1:1 molar ratio)

,

,

(50:50:100 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 3700)A-6:

,

,

Copolymer (weight average molecular weight: 3700) produced by condensation reaction of (50:50:100 molar ratio)

,

,

(50:50:100 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 3100)A-7:

,

,

Copolymer produced by condensation reaction of (50:50:100 molar ratio) (weight average molecular weight: 3100)

,

,

(50:50:100 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 3470)A-8:

,

,

Copolymer produced by condensation reaction of (50:50:100 molar ratio) (weight average molecular weight: 3470)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 4500)A'-1:

,

(1:1 molar ratio) of the copolymer produced by the condensation reaction (weight average molecular weight: 4500)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 4550)A'-2:

,

Copolymer (weight average molecular weight: 4550) produced by a condensation reaction of (1:1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 4550)A'-3:

,

Copolymer (weight average molecular weight: 4550) produced by a condensation reaction of (1:1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 4900)A'-4:

,

Copolymer (weight average molecular weight: 4900) produced by condensation reaction of (1:1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 5100)A'-5:

,

(1:1 molar ratio) of the copolymer produced by the condensation reaction (weight average molecular weight: 5100)

B-1: PGMEA

C-1: N-methoxymethyl-melamine resin

D-1: p-toluene sulfonic acid-pyridine salt

E-1: triethylene glycol

Experimental example

The etch resistance and coating uniformity of the hard mask layer or hard mask formed of the compositions of Table 1 were evaluated through the evaluation method to be described later. The evaluation results are shown in Table 2 below.

(1) Evaluation of etch resistance

The compositions according to Examples and Comparative Examples were coated on a silicon wafer by spin-coating, respectively, and baked at 200° C. for 60 seconds to form a film having a thickness of 1500 Å. After coating the photoresist for ArF on each formed film, baking at 110°C for 60 seconds, exposure using ASML (XT:1450G, NA 0.93) exposure equipment, and developing each with TMAH (2.38wt% aqueous solution) A line-and-space pattern of 60 nm was obtained.

The obtained patterned specimen was further cured at 110° C. for 60 seconds, and the specimen was dry etched for 20 seconds using a CHF ₃ /CF ₄ mixed gas, respectively, and the etching rate was measured by observing the cross section with FE-SEM. Etching resistance to halogen plasma was determined.

<Determination of etch resistance>

◎: Etching rate less than 10Å/Sec

○: Etching rate 10Å/Sec or more and less than 11Å/Sec

△: Etching rate 11Å/Sec or more and less than 12Å/Sec

×: Etching rate 12Å/Sec or more

(2) Evaluation of coating uniformity

After drying the compositions according to Examples and Comparative Examples in Table 1, spin-coated to a thickness of 5 μm, dried in a hot air dryer at 100° C. for 3 minutes, and then visually checked the surface.

<Determination of coating uniformity>

○: The unevenness of the coating surface was not visually confirmed.

(triangle|delta): A local non-uniform clustering area|region was visually confirmed.

x: Nonuniformity was visually confirmed from the front side.

division etch resistance Coating uniformity Example 1 ◎ △ Example 2 ◎ ○ Example 3 ◎ △ Example 4 ◎ △ Example 5 ◎ △ Example 6 ◎ ○ Example 7 ◎ ○ Example 8 ◎ ○ Example 9 ◎ △ Example 10 ◎ ○ Comparative Example 1 △ ○ Comparative Example 2 △ ○ Comparative Example 3 ○ ○ Comparative Example 4 ○ ○ Comparative Example 5 ○ ○

Referring to Table 2, in the case of Examples in which the carbazole unit and the fluorene unit are combined together, the etch resistance was significantly increased compared to the Comparative Examples. In addition, the coating uniformity was also improved along with the etch resistance by appropriately selecting the linker compounds.

Claims (9)

a polymer comprising a repeating unit to which a carbazole unit and a fluorene unit are bonded; and
contains a solvent;
The repeating unit is derived from a compound represented by the following formula (1), a composition for a hard mask:
[Formula 1]

(In Formula 1, R ₁ and R ₂ are each independently hydrogen, an alkyl group having 1 to 4 carbon atoms, an unsaturated aliphatic hydrocarbon group having 2 to 4 carbon atoms, or an aromatic hydrocarbon group having 6 to 20 carbon atoms).
The composition for a hard mask according to claim 1, wherein in the polymer, the carbazole unit and the fluorene unit are directly connected to each other.
delete The composition for a hard mask according to claim 1, wherein the polymer comprises a repeating unit derived from at least one selected from the group consisting of compounds represented by the following Chemical Formulas 1-1 to 1-4:
[Formula 1-1]

[Formula 1-2]

[Formula 1-3]

[Formula 1-4]

The composition for a hard mask according to claim 1, wherein the polymer comprises at least one of repeating units represented by the following Chemical Formula 2, Chemical Formula 3, or Chemical Formula 4:
[Formula 2]

[Formula 3]

(In Formula 3, R ₃ is hydrogen, an alkyl group having 1 to 4 carbon atoms, substituted or unsubstituted phenyl, naphthyl, anthracenyl, biphenyl, or stilbenyl)
[Formula 4]

(In Formula 4, Ar is substituted or unsubstituted phenylene, naphthylene, anthracenylene, biphenylene, or stilbenylene)
The method according to claim 5, wherein in Formula 4, Ar is derived from a compound represented by Formula 5 below. Composition for hard mask:
[Formula 5]

(In Formula 5, R ₄ and R ₅ are each independently hydrogen, methyl, or ethyl).
The method according to claim 1, The content of the polymer is 10 to 50% by weight of the total weight of the composition, the composition for a hard mask.
The composition for a hard mask according to claim 1, further comprising at least one of a crosslinking agent, a catalyst, and a surfactant.
A pattern forming method using a resist underlayer film formed from the composition for a hard mask according to any one of claims 1, 2, 4 to 8.