KR101459770B1 - group 3 nitride-based semiconductor devices - Google Patents

group 3 nitride-based semiconductor devices Download PDF

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KR101459770B1
KR101459770B1 KR1020080041097A KR20080041097A KR101459770B1 KR 101459770 B1 KR101459770 B1 KR 101459770B1 KR 1020080041097 A KR1020080041097 A KR 1020080041097A KR 20080041097 A KR20080041097 A KR 20080041097A KR 101459770 B1 KR101459770 B1 KR 101459770B1
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layer
nitride
electrode structure
group iii
ohmic contact
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KR1020080041097A
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Korean (ko)
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KR20090115314A (en
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송준오
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엘지이노텍 주식회사
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Priority to KR1020080041097A priority Critical patent/KR101459770B1/en
Priority to US12/990,398 priority patent/US9059338B2/en
Priority to PCT/KR2009/002352 priority patent/WO2009134109A2/en
Priority to EP09739015.7A priority patent/EP2290708B1/en
Priority to CN200980115885.7A priority patent/CN102017203B/en
Publication of KR20090115314A publication Critical patent/KR20090115314A/en
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Abstract

The present invention provides a Group III nitride-based semiconductor device having an electrode structure for forming an ohmic contacting interface on the surface of a Group III nitride semiconductor having a nitrogen polar surface exposed to the atmosphere do.

On the other hand, the present invention is characterized in that it comprises an n-type electrode structure which forms an ohmic contacting interface on the top surface of an n-type conductive Group III nitride-based semiconductor having a nitrogen polar surface The light emitting diode device of the vertical structure is provided.

Specifically, the present invention provides a good ohmic contact interface on the top surface of Group III nitride-based semiconductors with a nitrogen polarity surface exhibiting completely different surface behavior than group III nitride-based semiconductor surfaces having Group 3 metal polar surfaces To an electrode structure to be formed.

Group III nitride semiconductor, semiconductor device, light emitting diode device, electroplating, wafer bonding, laser lift off, chemical wet etching, nitrogen polarity, Group 3 metal polarity, ohmic contact interface, electrode structure

Description

Group 3 nitride-based semiconductor devices < RTI ID = 0.0 >

The present invention relates to a Group III nitride-based semiconductor device having an electrode structure for forming an ohmic contacting interface on a top surface of a Group III nitride semiconductor having a nitrogen polar surface exposed to the atmosphere, Thereby providing a diode element. In other words, the present invention relates to a group III nitride-based semiconductor having a group 3 group nitride-based semiconductor surface with a completely different surface behavior from a group III nitride-based semiconductor surface having a group 3 metal polar surface. The present invention relates to a group III nitride-based semiconductor device and an LED device having improved electrical or optical characteristics by forming an electrode structure for forming an ohmic contacting interface, and a method of manufacturing the same.

When a forward current of a certain magnitude is applied to a light emitting diode (LED) device, current is converted into light in the active layer in the solid state light emitting structure to generate light. The earliest LED element research and development forms a compound semiconductor such as indium phosphide (InP), gallium arsenide (GaAs), and gallium phosphorus (GaP) in a p-i-n junction structure. The LED emits light of a visible light range of a wavelength band longer than the wavelength of green light, but recently, a device emitting blue and ultraviolet light is also commercialized due to research and development of the group III nitride-based semiconductor material system. Devices, light source devices, and environmental application devices.

As shown in FIG. 2, a light-emitting diode (hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) element made of a Group III nitride-based semiconductor is generally grown on an insulating growth substrate (typically, sapphire) Two electrodes of the group III-V compound semiconductor light-emitting diode device, which are opposite to each other on the opposite sides of the growth substrate, can not be provided, and two electrodes of the LED device must be formed on the upper part of the crystal- . The structures of such conventional Group III nitride-based semiconductor light-emitting diode devices and light-emitting structures for devices are schematically illustrated in FIGS. 1 and 2. FIG.

2, a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device includes a sapphire substrate 10 and a lower substrate made of an n-type conductive semiconductor material sequentially grown on the substrate 10 A nitride-based clad layer 20, a nitride-based active layer 30, and a top nitride-based clad layer 40 made of a p-type conductive semiconductor material. The lower nitride-based cladding layer 20 may include n-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) And a nitride-based In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) layer composed of different compositions of a multi-quantum well structure. The upper nitride-based cladding layer 40 may be composed of p-type In x Al y Ga 1-x-y N (0? X, 0? Y, x + y? 1) In general, the lower nitride-based cladding layer / nitride-based active layer / upper nitride-based cladding layers 20, 30, and 40 formed of the Group III nitride-based semiconductor single crystal may be grown using an apparatus such as MOCVD or MBE. At this time, in order to improve the lattice matching with the sapphire growth substrate 10 before growing the n-type In x Al y Ga 1-xy N layer of the lower nitride-based cladding layer 20, a buffer layer such as AlN or GaN Not shown) may be formed therebetween.

On the other hand, as shown in FIG. 2, the group III nitride-based semiconductor single crystal is located on the c (0001) planes perpendicularly intersecting the crystal c axis of the sapphire growth substrate. The symmetry elements contained within the fiberglass wurtzite structure indicate that group III nitride-based semiconductor single crystals have a spontaneous polarization along this c-axis. In addition, when the fiber-zinc-zoned crystal structure is non-centrosymmetric, group III nitride-based semiconductor single crystals can additionally show piezoelectric polarization along the c-axis of the crystal. Current group III nitride-based semiconductor single crystal growth techniques for optoelectronic devices use group III nitride-based semiconductor single crystals ending with a group 3-metal polar surface grown along the c-axis. In other words, when Group III nitride-based semiconductor single crystals are grown using growth equipment such as MOCVD or HVPE, the surface in contact with the air is group 3 group metal polarity, while the growth substrate sapphire (10 ) Has a nitrogen polarity.

However, as described above, due to the presence of strong piezoelectric and spontaneous polarization in a group III nitride-based semiconductor single crystal thin film having a definite polar surface, it has been found that the conventional group III nitride-based semiconductor single- The c (0001) plane quantum well structures are affected by the undesired quantum-confined Stark effect. In other words, strong intrinsic electric fields along the c-axis, which is the direction of growth of the semiconductor monocrystal, spatially separate electrons and holes, thereby restricting the recombination efficiency of electrons and holes, reducing the intensity of the oscillator, and causing red- .

Further, the group III nitride-based semiconductor single crystal surface or interface behavior with a definite polar surface is significantly different even in the same situation depending on the Group 3 metal polarity or nitrogen polarity. For example, n-type conductive gallium nitride (n-GaN: Ga) and n-type conductive gallium nitride (n-GaN: N) having a gallium polarity, When Ti / Al, which is the same electrode material, is laminated on the surface, the contacting interface behaves differently depending on the room temperature and the annealing temperature. This has been confirmed in various documents as a main cause of the polarization phenomenon caused on the other polarity surface as described above.

1, the sapphire growth substrate 10 is an electrically insulating material, so that both electrodes of the light emitting diode device are divided into a group 3 Based clad layer 40 and the nitride-based active layer 30 (see FIG. 1), and the nitride-based active layer 30 and the nitride-based active layer 30 are formed on the upper and lower surfaces of the In x Al y Ga 1-xy N layer, (That is, etching) a portion of the lower nitride-based cladding layer 20 to expose a part of the upper surface of the lower nitride-based cladding layer 20, and exposing the exposed group-3 metal polar surface of the n-type In x Al y Ga 1 an n-type electrode and an electrode pad 70, which form an ohmic contact interface on the upper surface of the lower nitride-based cladding layer 20 of the -xy N layer, are laminated. Type In x Al y Ga 1-xy N layer having a Group 3 metal polarity surface as compared with the upper nitride-based cladding layer having a p-type In x Al y Ga 1-xy N layer having a Group 3 metal polarity surface The lower nitride-based clad layer can not only serve as an excellent electrical conductor due to its high carrier concentration and migration, but also can function as a lower nitride-based layer of the n-type In x Al y Ga 1-xy N layer having the Group 3 metal- When the electrode material is laminated on the upper surface of the clad layer 20, a good ohmic contact interface with a low noncontact resistance can be formed, and a high-quality n-type electrode and the electrode pad 70 can be formed.

On the other hand, since the upper nitride-based clad layer 40 has a relatively high sheet resistance due to a low carrier concentration and mobility, Lt; RTI ID = 0.0 > ohmic contact < / RTI > current spreading layer. On the other hand, in the US Pat. No. 5,563,422, a p-type In x Al y Ga 1-xy N layer 40 having a Group 3 metal polarity surface located on the uppermost layer of the light emitting structure for a group III nitride- Prior to formation of the p-type electrode pad 60 on the upper nitride-based clad layer, the ohmic contact current spreading layer 50 forming the ohmic contact interface with low contact resistance in the vertical direction is formed by Ni / Au The proposed material system is proposed. In order to obtain a high-brightness light-emitting diode device with high light transmittance of the ohmic contact current spreading layer 50, an ohmic contact current spreading layer formed of various opaque metals or alloys including the Ni / A layer of a transparent conductive material such as indium tin oxide (ITO) or zinc oxide (ZnO), which has an average transmittance of 90% or more, has been proposed instead of the layer 50. However, the transparent electroconductive material layer described above has a layer of p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) Type cladding layer of a p-type In x Al y Ga 1-xy N layer 40 having a small work function (4.7 to 6.1 eV) and a Group 3 metal-polarity p-type In x Al y Ga 1-xy N layer 40, A sharp contact interface having a large noncontact resistance is formed not in the ohmic contact interface after the process, and a new transparent conductive material or manufacturing process is required.

Recently, LEDs for white light sources that emit white light by combining three red, blue, and green LED chips or a phosphor with a short wavelength pumping LED have been developed. And its application range is widening. Particularly, the LED element using the group III nitride-based semiconductor single crystal has a high efficiency of converting electrical energy into light energy, an average life span of 5 years or more, and has an advantage of saving energy consumption and maintenance cost Has attracted attention in the field of white light source for next generation illumination. For this purpose, it is necessary to increase the energy conversion efficiency (lm / W) of the packaged light emitting diode device by extracting as much light as possible from the nitride based active layer in the light emitting structure for the group III nitride based semiconductor light emitting diode device. Generally, the external luminous efficiency of the group III nitride-based semiconductor light-emitting diode is surprisingly low. This is because a large difference in refractive index between a group III nitride-based semiconductor including gallium nitride (GaN) or an ohmic contact current spreading layer such as ITO or ZnO and a molding material causes a considerable part of light generated in the LED structure Is totally reflected without being emitted to the outside, proceeds to the inside of the LED again and disappears. For example, assuming that gallium nitride (GaN) has a refractive index of about 2.3 and a refractive index of a molding material of about 1.5, the total amount of light reflected from the junction surface of the two materials is about 90% .

In order to solve this problem, a light emitting structure for a light emitting diode device is grown on a growth substrate 10, and then sapphire as a growth substrate 10 is lifted off from the light emitting structure to form two ohmic contact electrodes and electrode pads A group III nitride-based semiconductor light-emitting diode device having a vertical structure in which a current applied from the outside flows in one direction to improve luminous efficiency is disclosed in many documents (US Pat. No. 6,071,795 , US 6,335,263, US 20060189098).

FIGS. 2 to 7 are sectional views showing a typical manufacturing process of a group III nitride-based semiconductor light-emitting diode device having a vertical structure, as an example of a conventional vertical-structure light-emitting diode device manufacturing technique.

In a general vertical structure light emitting diode device manufacturing method, a light emitting structure for a light emitting diode device is formed on the upper surface of a sapphire growth substrate by using growth equipment such as MOCVD or HVPE, A reflective p-type Ohmic contact electrode structure is formed on the upper surface of the nitride-based clad layer, and then a separately prepared support substrate wafer is subjected to soldering wafer bonding or electro-plating at a temperature of less than 300 ° C. Type sapphire substrate is formed on the reflective p-type ohmic contact electrode structure, and then the sapphire growth substrate is separated from the sapphire substrate to produce a vertical LED structure.

Referring to FIG. 2, an undoped GaN or InGaN buffer layer (not shown), an n-type conductive semiconductor material (not shown) is grown on a sapphire growth substrate 10 using a growth equipment such as MOCVD or HVPE A nitride-based active layer 30 formed of InGaN and GaN, and a super-nitride-based clad layer 40 composed of a p-type conductive semiconductor material are successively grown on the lower cladding layer 20, . As noted above, once a group III nitride-based semiconductor single crystal is grown using growth equipment such as MOCVD or MBE, the In x Al y Ga 1-xy N (0? X, 0 Y, x + y < / = 1) layer has a Group 3 metal polarity surface, whereas the In x Al y Ga 1-xy N (0 x, 0 y, x + y? 1) layer has a nitrogen polar surface.

As shown in FIG. 3, after a light emitting structure for a light emitting diode device is formed on the upper surface of the sapphire growth substrate 10, a reflective p-type ohmic contact layer 40 is formed on the upper surface of the upper nitride cladding layer 40 made of the p- A separate multi-layer 102 is formed that includes a reflective ohmic contact electrode system 103 and a diffusion barrier layer. Particularly, not only the mechanical bonding force between the respective layers is strengthened but also a high quality ohmic contact interface is formed between the reflective p-type ohmic contact electrode structure 103 and the upper nitride-based cladding layer 40 having a Group 3 metal polarity surface As a means, processes such as annealing and surface treatment are introduced before / after each step.

Then, as shown in FIG. 4, a separate monolayer or multilayer 101 of electroplating seeding thinfilm or soldering thinfilm for wafer bonding is used A support substrate wafer 100 is formed on the reflective p-type ohmic contact electrode structure 103.

It can then be grown by chemical-mechanical polishing (CMP), chemical etching using a wet etching solution, or thermo-chemical decomposition reaction by irradiating a photon beam with strong energy The substrate 10 is lifted off and removed. 5, in the case of an optically transparent material such as the sapphire growth substrate 10, a laser, which is a strong energy beam, is irradiated to the back surface of the sapphire substrate to form the light emitting structure 20 for the light emitting diode and the sapphire growth substrate 10, A thermal-chemical decomposition reaction is caused at the interface between the sapphire substrate 10 and the sapphire substrate 10 to separate and remove the sapphire substrate 10. 6, after the sapphire growth substrate 10 and the debris are completely removed, a multilayered electroconductive thin film layer 101, 102, 103 and a light emitting diode 40 for a light emitting diode element 40 , 30 and 20 are laminated.

In particular, a light emitting structure for a light emitting diode element that is in contact with the upper surface of the sapphire growth substrate 10, that is, a nitride nitride based clad layer 20 / a nitride based active layer 30 / a nitride based clad layer Based nitride cladding layer 20 is exposed to the air and the nitride-based active layer 30 is sequentially formed on the lower surface of the lower nitride-based cladding layer 20, as opposed to the stacking process of the nitride- And the upper nitride-based cladding layer 40 are laminated.

FIG. 7 is a cross-sectional view showing a vertical-type light-emitting diode device in which a partial n-type electrode structure 104 and a front-side n-type electrode structure 105, 104 are formed on the upper surface of the lower nitride-based clad layer 20 having a nitrogen polar surface. However, as described above, the lower nitride-based clad layer 20 having a nitrogen polar surface is significantly different in surface characteristics from the lower nitride-based clad layer 20 having a Group 3 metal polar surface, and thus has a good ohmic contact interface It is not easy to form the n-type electrode structure to be formed. If a light emitting diode device having a vertical structure with an n-type electrode structure that forms a good ohmic contact interface can not be manufactured, a high driving voltage drop occurs when driving the vertical light emitting diode device, But it is known to result in low device reliability and short lifetime due to the large amount of heat generated and rapid device degeneration.

The present invention relates to a Group III nitride-based semiconductor top surface of a nitrogen polar surface having completely different surface behavior from a Group III nitride-based semiconductor surface having a Group 3 metal polar surface, and an electrode structure for forming an ohmic contacting interface, thereby improving the electrical or optical characteristics of the group III nitride-based semiconductor device, a light emitting diode device, and a method of manufacturing the same.

In order to achieve the above object, the group III nitride-based semiconductor device according to the present invention exposes the upper surface of a group III nitride-based semiconductor layer having a nitrogen polar surface to the atmosphere, And an electrode structure including a surface modification layer formed on an upper surface of the Group III nitride-based semiconductor layer. Specifically, an interfacial modification layer is interposed between the group III nitride-based semiconductor layer having a nitrogen polar surface and an electrode structure to form an ohmic contact interface.

The surface-modifying layer located on the surface of the Group III nitride-based semiconductor layer having the nitrogen-polarized surface includes one of sulfur (S), selenium (Se), tellurium (Te), and fluorine (S) And a metallic compound bonded to one of the elements of zinc (Zn), magnesium (Mg), aluminum (Al), gallium (Ga) and lanthanum (La). Preferably, the surface modification layer is formed of a metal compound having a thickness of 5 nanometers (nm) or less.

The electrode structure formed on the upper surface of the surface modification layer may be formed of a partial electrode system or a full electrode system.

In order to achieve the above object, the vertical Group III nitride-based semiconductor light emitting diode device according to the present invention includes a lower nitride-based clad layer composed of an n-type conductive semiconductor material having a nitrogen polar surface, A nitride-based active layer having a nitride-based active layer between upper nitride-based cladding layers composed of a conductive semiconductor material, the vertical-structured light-emitting diode device comprising: a lower portion composed of an n-type conductive Group III nitride-based semiconductor material having a nitrogen- And an n-type electrode structure including a surface modification layer on an upper surface of the nitride-based clad layer.

The surface-modifying layer located on the surface of the group III nitride-based semiconductor having the nitrogen polar surface includes one of sulfur (S), selenium (Se), tellurium (Te), and fluorine (S) And a metallic compound bonded to one of the elements Zn, Mg, Al, Ga, and La. Preferably, the surface modification layer is formed of a metal compound having a thickness of 5 nanometers (nm) or less.

Further, n-type electrode structure formed on an upper surface of the surface modification layer is formed from a portion of the electrode structure (partial n -type electrode system) or on the front n-type electrode structure (full n -type electrode system).

The partial n-type electrode structure is formed of a reflective ohmic contacting electrode and a reflective electrode pad which are formed on a part of the upper surface of the surface modification layer and have a reflectance of 50% or more in a wavelength band of 600 nm or less On the other hand, the front n-type electrode structure may include a transparent ohmic contacting electrode formed on the entire upper surface of the surface modification layer and having a transmittance of 70% or more in a wavelength band of 600 nm or less and a transparent ohmic contact electrode And a reflective electrode pad having a reflectance of 50% or more in a wavelength band of 600 nm or less.

According to another aspect of the present invention, there is provided a method of fabricating a group III nitride-based semiconductor light-emitting diode device having a vertical structure including a lower nitride-based clad made of an n-type conductive semiconductor material having a nitrogen polar surface, And a nitride-based active layer between the upper nitride-based clad layer and the upper nitride-based clad layer, the upper nitride-based clad layer being made of a p-type conductive semiconductor material. (Nm) or less on the lower nitride-based clad layer of the vertical structure light-emitting structure for a light-emitting diode device in which the upper nitride-based clad layer, the nitride-based active layer, and the lower nitride- Forming a surface modification layer having a thickness; I. Forming a partial n-type electrode structure including a reflective ohmic contact electrode and a reflective electrode pad on the upper surface of the surface modification layer formed through the steps; All. And performing heat treatment after the above-mentioned steps.

According to still another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: annealing a surface modification layer on the lower nitride-based clad layer before forming the partial n-type electrode structure.

According to still another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a reflective ohmic contact electrode of the partial n-type electrode structure and then performing heat treatment before forming a reflective electrode pad.

According to another aspect of the present invention, there is provided a method of fabricating a group III nitride-based semiconductor light-emitting diode device having a vertical structure including a lower nitride-based clad made of an n-type conductive semiconductor material having a nitrogen polar surface, And a nitride-based active layer between the upper nitride-based clad layer and the upper nitride-based clad layer, the upper nitride-based clad layer being made of a p-type conductive semiconductor material. (Nm) or less on the lower nitride-based clad layer of the vertical structure light-emitting structure for a light-emitting diode device in which the upper nitride-based clad layer, the nitride-based active layer, and the lower nitride- Forming a surface modification layer having a thickness; I. Forming a front n-type electrode structure including a transparent ohmic contact electrode and a reflective electrode pad on the upper surface of the surface modification layer formed through the steps; All. And performing heat treatment after the above-mentioned steps.

According to still another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: heat treating a surface modification layer on the lower nitride-based clad layer before forming the front n-type electrode structure.

According to still another aspect of the present invention, there is provided a method of manufacturing a display device, comprising: forming a transparent ohmic contact electrode of the front n-type electrode structure, followed by heat treatment before forming a reflective electrode pad;

As described above, the present invention provides an electrode structure for forming a good ohmic contacting interface on the top surface of a Group III nitride semiconductor of a nitrogen polar surface, thereby improving the electrical or optical properties of Group 3 A nitride-based semiconductor device and a light emitting diode device can be manufactured.

Hereinafter, a group III nitride-based semiconductor device and a light emitting diode device manufactured according to the present invention will be described in detail with reference to the accompanying drawings.

8 is a cross-sectional view of a group III nitride-based semiconductor device as a first embodiment manufactured by the present invention.

Referring to the drawings, a group III nitride-based semiconductor device includes a support substrate 200, a multi-layer structure 210 for a group III nitride-based semiconductor device, a group III nitride-based semiconductor layer having a surface of nitrogen polarity A surface modification layer 230, and a partial electrode structure 240 are stacked in this order.

Here, the structure from the support substrate 200 to the group III nitride-based semiconductor layer 220 having a surface of nitrogen polarity corresponds to a structure for a group III nitride-based semiconductor element, and the nitrogen polarity The surface modification layer 230 and the partial electrode structure 240 stacked on the surface of the Group III nitride semiconductor layer 220 having the surface of the Group III nitride semiconductor layer 220 correspond to an electrode structure having an ohmic contacting interface.

The supporting substrate 200 is preferably formed of any one of sapphire (Al 2 O 3 ), silicon carbide (SiC), silicon (Si), and gallium arsenide (GaAs).

Each layer from the multi-layer structure 210 for group III nitride-based semiconductor elements to the group III nitride-based semiconductor layer 220 is a general formula of group III nitride-based semiconductor compound, Al x In y Ga z N (0? X 1, 0? Y? 1, 0? Z? 1, 0? X + y + z? 1), wherein the n-type conductive nitride- The dopant is added to the p-type conductive nitride-based semiconductor layer.

For example, when a gallium nitride (GaN) compound semiconductor is applied as an example, the n-type conductive nitride based semiconductor layer is formed by adding Si, Ge, Se, Te or the like as an n-type dopant to GaN, The semiconductor layer is formed by adding Mg, Zn, Ca, Sr, and Ba as p-type dopants to GaN.

In particular, the group III nitride-based semiconductor layer 220 having a surface of nitrogen polarity has a surface ending with a nitrogen atom and is exposed to air.

The surface modification layer 230 located on a part of the upper surface of the Group III nitride semiconductor layer 220 having the nitrogen polarity surface is formed so that the partial electrode structure 240 forms an ohmic contact interface with a low contact resistance And is formed of a metallic compound having a thickness of 5 nanometers (nm) or less. The metal compound constituting the surface modification layer 230 may be one of sulfur (S), selenium (Se), tellurium (Te), and fluorine (S), indium (In) (Mg), aluminum (Al), gallium (Ga), and lanthanum (La).

The partial electrode structure 240 is located on the upper surface of the surface modification layer 200 and is formed in a predetermined region of the surface modification layer 200 with a predetermined shape and dimensions.

The partial electrode structure 240 is composed of a reflective ohmic contacting electrode and a reflective electrode pad having a reflectance of 50% or more in a wavelength band of 600 nm or less.

For example, In2S3 and Cr / Al / Ni / Au may be applied to the surface modification layer 230 and the partial electrode structure 240, respectively.

The surface modification layer 230 and the partial electrode structure 240 may be formed using an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD) thermal evaporator, sputtering, or the like.

In addition, the deposition temperature, which is applied to form the surface modification layer 230 and the partial electrode structure 240, is in the range of 20 ° C to 1500 ° C, and the pressure in the deposition chamber is in the range of atmospheric pressure to about 10 -12 Torr.

In addition, it is preferable to improve the electrical and mechanical properties of the surface modification layer 230 and the partial electrode structure 240 after the deposition thereof, and anneal the same. The annealing is carried out at a temperature in the reactor of 100 ° C to 800 ° C in a vacuum or in a gas atmosphere for 10 seconds to 3 hours. At least one gas selected from the group consisting of nitrogen, argon, helium, oxygen, hydrogen, and air may be applied to the reactor during the heat treatment.

9 is a cross-sectional view of a group III nitride-based semiconductor device as a second embodiment manufactured by the present invention.

Referring to FIG. 1, a Group III nitride-based semiconductor device includes a support substrate 300, a multi-layer structure 310 for a group III nitride-based semiconductor device, a group III nitride-based semiconductor layer 310 having a surface of nitrogen polarity The first electrode layer 320, the surface modification layer 330, and the front electrode structure 340 are sequentially stacked.

Here, the structure from the supporting substrate 300 to the group III nitride-based semiconductor layer 320 having a surface of nitrogen polarity corresponds to a structure for a group III nitride-based semiconductor element, and the nitrogen polarity The surface modification layer 330 and the front electrode structure 340 stacked on the upper surface of the Group III nitride semiconductor layer 320 having the surface of the Group III nitride semiconductor layer 320 correspond to an electrode structure having an ohmic contacting interface.

The supporting substrate 300 is preferably formed of any one of sapphire (Al 2 O 3 ), silicon carbide (SiC), silicon (Si), and gallium arsenide (GaAs).

Each layer from the multi-layer structure 310 for group III nitride-based semiconductor elements to the group III nitride-based semiconductor layer 320 is a general formula of group III nitride-based semiconductor compound, Al x In y Ga z N (0 x 1, 0? Y? 1, 0? Z? 1, 0? X + y + z? 1), wherein the n-type conductive nitride- The dopant is added to the p-type conductive nitride-based semiconductor layer.

For example, when a gallium nitride (GaN) compound semiconductor is applied as an example, the n-type conductive nitride based semiconductor layer is formed by adding Si, Ge, Se, Te or the like as an n-type dopant to GaN, The semiconductor layer is formed by adding Mg, Zn, Ca, Sr, and Ba as p-type dopants to GaN.

In particular, the Group III nitride-based semiconductor layer 320 having a surface of nitrogen polarity has a surface terminated with a nitrogen atom and is exposed to air.

The surface modification layer 330 positioned on the entire upper surface of the Group III nitride semiconductor layer 320 having the nitrogen polarity surface is formed such that the front electrode structure 340 forms an ohmic contact interface with a low contact resistance And is formed of a metallic compound having a thickness of 5 nanometers (nm) or less. The metal compound constituting the surface modification layer 230 may be one of sulfur (S), selenium (Se), tellurium (Te), and fluorine (S), indium (In) (Mg), aluminum (Al), gallium (Ga), and lanthanum (La).

The front electrode structure 340 is formed on the entire upper surface of the surface modification layer 330.

The front electrode structure 340 may include a transparent ohmic contacting electrode having a transmittance of 70% or more in a wavelength band of 600 nm or less and a transparent ohmic contact electrode formed on the transparent ohmic contact electrode and having a transmittance of 50% And a reflective electrode pad having a reflection ratio.

For example, In 2 S 3 and ITO / Cr / Al / Ni / Au may be applied to the surface modification layer 330 and the front electrode structure 340, respectively.

The surface modification layer 330 and the front electrode structure 340 may be formed using an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD) thermal evaporator, sputtering, or the like.

In addition, the deposition temperature, which is applied to form the surface modification layer 330 and the front electrode structure 340, is in the range of 20 ° C to 1500 ° C, and the pressure in the deposition chamber is in the range of atmospheric pressure to about 10 -12 Torr.

In addition, it is preferable that the surface modification layer 330 and the front electrode structure 340 are deposited, and then annealing is performed to improve good electrical and mechanical properties. Annealing is carried out at a temperature in the reactor of 100 ° C to 800 ° C in a vacuum or gas atmosphere for 10 seconds to 3 hours. At least one gas selected from the group consisting of nitrogen, argon, helium, oxygen, hydrogen, and air may be applied to the reactor during the heat treatment.

10 is a cross-sectional view of a group III nitride-based semiconductor light emitting diode device having a vertical structure as a third embodiment manufactured by the present invention.

The light emitting diode device according to one embodiment of the present invention includes two layers of wafer bonding layers 410 and 420, a reflective ohmic contact current spreading layer 430, p The upper nitride-based clad layer 440, the nitride-based active layer 450, the lower nitride-based clad layer 460 made of an n-type conductive semiconductor, the surface modification layer 470, and the partial n- ≪ / RTI > structure 480. FIG. In this case, the lower nitride-based cladding layer 460 has a surface of nitrogen polarity.

Herein, from the supporting substrate 400 to the lower nitride-based cladding layer 460 made of an n-type conductive semiconductor having a surface of nitrogen polarity, the light-emitting structure for a group III nitride-based semiconductor light- The surface modifying layer 470 and the partial electrode structure 480 stacked on the upper surface of the lower nitride-based cladding layer 460 made of the n-type conductive semiconductor having the nitrogen polarity surface are in ohmic contact And an electrode structure having an ohmic contacting interface.

The supporting substrate 400 is preferably formed of any one of sapphire (Al 2 O 3 ), silicon carbide (SiC), silicon (Si), and gallium arsenide (GaAs).

The wafer bonding layers 410 and 420 of the two layers may be any material that forms a mechanically and thermally stable bonding force between the reflective ohmic contact current spreading layer and the supporting substrate 400. However, , Pd, Al and the like are preferable. The two wafer bonding layers 410 and 420 are bonded with strong wafer bonding force between the two layers.

The reflective ohmic contact current spreading layer 430 may have a high reflectance of 70% or more in a wavelength region band of 600 nanometers (nm) or less, such as oxidized aluminum (Al), silver (Ag), rhodium And may be formed by physical vapor deposition (PVD) or chemical vapor deposition (CVD) methods.

It is possible to improve the ohmic contact through the interface modification before and after the reflective ohmic contact current spreading layer 430 is formed, prevent the diffusion of the material, improve the bonding and bonding of the materials, Of the thin film layer.

The p-type conductive upper nitride-based clad layer 440 is a region located on the upper surface of the reflective ohmic contact current spreading layer 430 and providing a hole, wherein the p-type conductive upper nitride- Layer 440 may form a single layer or multi-layer structure formed of p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1).

The p-type conductive upper nitride-based clad layer 440 may be formed by doping magnesium (Mg) or zinc (Zn).

The nitride based light emitting layer 450 is located on the upper surface of the p-type conductive upper nitride based clad layer 440 and is a region where electrons and holes are recombined, and includes InGaN, AlGaN, GaN, AlInGaN and the like . The light emitting wavelength of the light emitted from the light emitting diode is determined according to the kind of the material of the nitride based light emitting layer 450. The nitride based light emitting layer 450 may be a multilayer film in which a quantum well layer and a barrier layer are repeatedly formed. The barrier layer and the well layer are binary, ternary or quaternary compound nitride semiconductor layers represented by the general formula In x Al y Ga 1-xy N (0? X, 0? Y, x + . Furthermore, the barrier layer and the well layer may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like.

The n-type conductive lower nitride-based cladding layer 460 is located on the upper surface of the nitride-based light emitting layer 450 and provides electrons. At this time, the n-type conductive lower nitride- Layer structure or a multi-layer structure formed of n-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1).

The n-type conductive upper nitride-based cladding layer 460 may be formed by doping silicon (Si).

Meanwhile, the p-type conductive upper nitride-based clad layer 440 of the light-emitting structure for the vertical-type light-emitting diode device and the reflective ohmic contact current-spreading layer 430 may have a thickness of 5 nanometers (nm) Type conductivity of InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN monolayer having a thickness of 5 nanometers (nm) (AlN), AlN, InN, AlGaN, AlInGaN monolayers, or nitride or carbon nitride of Group 2, Group 3, or Group 4 elements having other dopant and composition elements A superlattice structure can be interposed.

In particular, the n-type conductive upper nitride-based cladding layer 460 having the surface of nitrogen polarity is exposed to air with a surface ending with a nitrogen atom.

The surface modification layer 470 located in a part of the upper surface of the Group III nitride semiconductor layer 460 having the nitrogen polarity surface is formed so that the partial electrode structure 480 forms an ohmic contact interface with a low contact resistance And is formed of a metallic compound having a thickness of 5 nanometers (nm) or less. The metal compound constituting the surface modification layer 470 may be at least one selected from the group consisting of one of sulfur (S), selenium (Se), tellurium (Te), and fluorine (S), indium (In) (Mg), aluminum (Al), gallium (Ga), and lanthanum (La).

The partial electrode structure 480 is formed on the entire upper surface of the surface modification layer 470.

The partial electrode structure 480 is located on the upper surface of the surface modification layer 470 and is formed in a predetermined region of the surface modification layer 200 with a predetermined shape and dimensions.

The partial electrode structure 480 is composed of a reflective ohmic contacting electrode and a reflective electrode pad having a reflectance of 50% or more in a wavelength band of 600 nm or less.

For example, In2S3 and Cr / Al / Ni / Au may be applied to the surface modification layer 470 and the partial electrode structure 480, respectively.

The surface modification layer 470 and the partial electrode structure 480 may be formed using an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD) thermal evaporator, sputtering, or the like.

Also, the deposition temperature, which is applied to form the surface modification layer 470 and the partial electrode structure 480, is in the range of 20 ° C to 1500 ° C, and the pressure in the deposition chamber is in the range of atmospheric pressure to about 10 -12 Torr.

Further, after the surface modification layer 470 and the partial electrode structure 480 are deposited, it is preferable to improve the electrical and mechanical properties and to anneal. Annealing is carried out at a temperature in the reactor of 100 ° C to 800 ° C in a vacuum or gas atmosphere for 10 seconds to 3 hours. At least one gas selected from the group consisting of nitrogen, argon, helium, oxygen, hydrogen, and air may be applied to the reactor during the heat treatment.

11 is a cross-sectional view of a group III nitride-based semiconductor light emitting diode device having a vertical structure as a fourth embodiment manufactured by the present invention.

The light emitting diode device according to an embodiment of the present invention includes two layers of wafer bonding layers 510 and 520, a reflective ohmic contact current spreading layer 530, a p-type The upper nitride-based clad layer 540 made of a conductive semiconductor, the nitride-based active layer 550, the lower nitride-based clad layer 560 made of an n-type conductive semiconductor, the surface modification layer 570, (580). In this case, the lower nitride-based cladding layer 560 has a surface of nitrogen polarity.

Herein, from the supporting substrate 500 to the lower nitride-based cladding layer 560 made of an n-type conductive semiconductor having a surface of nitrogen polarity, a light-emitting structure for a group III nitride-based semiconductor light- The surface modification layer 570 and the front electrode structure 580 stacked on the upper surface of the lower nitride-based clad layer 560 made of the n-type conductive semiconductor having the nitrogen polarity surface are in ohmic contact And an electrode structure having an ohmic contacting interface.

The supporting substrate 500 is preferably formed of any one of sapphire (Al 2 O 3 ), silicon carbide (SiC), silicon (Si), and gallium arsenide (GaAs).

The wafer bonding layers 510 and 520 of the two layers may be any material that can form a mechanically and thermally stable bonding force between the reflective ohmic contact current spreading layer and the support substrate 500. However, Au, Ag, Cu, Pt , Pd, Al and the like are preferable. The wafer bonding layers 510 and 520 of the two layers are bonded with strong wafer bonding force between the two layers.

The reflective ohmic contact current spreading layer 530 may have a high reflectance of 70% or more in a wavelength region band of 600 nanometers (nm) or less, such as oxidized aluminum (Al), silver (Ag), rhodium And may be formed by physical vapor deposition (PVD) or chemical vapor deposition (CVD) methods.

The organic layer may be formed on the surface of the reflective ohmic contact current spreading layer 530 to improve the ohmic contact through the interface modification before or after the reflective ohmic contact current spreading layer 530 is formed, Of the thin film layer.

The p-type conductive upper nitride-based clad layer 540 is a region located on the upper surface of the reflective ohmic contact current spreading layer 530 and providing a hole, wherein the p-type conductive upper nitride- Layer 440 may form a single layer or multi-layer structure formed of p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1).

The p-type conductive upper nitride-based clad layer 540 may be formed by doping magnesium (Mg) or zinc (Zn).

The nitride based light emitting layer 550 is a region located on the upper surface of the p-type conductive upper nitride based clad layer 540 and is a region where electrons and holes are recombined, and includes InGaN, AlGaN, GaN, AlInGaN, . The light emitting wavelength of the light emitted from the light emitting diode is determined according to the type of the material of the nitride-based light emitting layer 550. The nitride based light emitting layer 550 may be a multilayer film in which a quantum well layer and a barrier layer are repeatedly formed. The barrier layer and the well layer are binary, ternary or quaternary compound nitride semiconductor layers represented by the general formula In x Al y Ga 1-xy N (0? X, 0? Y, x + . Furthermore, the barrier layer and the well layer may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like.

The n-type conductive lower nitride-based clad layer 560 is located on the upper surface of the nitride based light emitting layer 550 and provides electrons. At this time, the n-type conductive lower nitride- Layer structure or a multi-layer structure formed of n-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1).

The n-type conductive upper nitride-based clad layer 560 may be formed by doping silicon (Si).

Meanwhile, the p-type conductive upper nitride-based clad layer 540 of the light-emitting structure for the vertical-structured light-emitting diode element and the reflective ohmic contact current-spreading layer 530 are formed between the p- Type conductivity of InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN monolayer having a thickness of 5 nanometers (nm) (AlN), AlN, InN, AlGaN, AlInGaN monolayers, or nitride or carbon nitride of Group 2, Group 3, or Group 4 elements having other dopant and composition elements A superlattice structure can be interposed.

In particular, the n-type conductive upper nitride-based cladding layer 560 having the nitrogen polarity surface is exposed to air with a surface ending with a nitrogen atom.

The surface modification layer 570 located on the entire upper surface of the group III nitride semiconductor layer 560 having the nitrogen polarity surface is formed so that the front electrode structure 580 forms an ohmic contact interface with a low contact resistance And is formed of a metallic compound having a thickness of 5 nanometers (nm) or less. The metal compound constituting the surface modification layer 570 may be at least one selected from the group consisting of one of sulfur (S), selenium (Se), tellurium (Te), and fluorine (S) and at least one element selected from the group consisting of indium (In) (Mg), aluminum (Al), gallium (Ga), and lanthanum (La).

The front electrode structure 580 is formed on the entire upper surface of the surface modification layer 570.

The front electrode structure 580 includes a transparent ohmic contacting electrode having a transmittance of 70% or more in a wavelength band of 600 nm or less, and a transparent ohmic contact electrode formed on the transparent ohmic contact electrode and having a transmittance of 50% or more And a reflective electrode pad having a reflectivity.

For example, In 2 S 3 and ITO / Cr / Al / Ni / Au may be applied to the surface modification layer 570 and the front electrode structure 580, respectively.

The surface modification layer 570 and the front electrode structure 580 may be formed using an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD) thermal evaporator, sputtering, or the like.

In addition, the deposition temperature, which is applied to form the surface modification layer 570 and the front electrode structure 580, is in the range of 20 占 폚 to 1500 占 폚, and the pressure in the deposition chamber is in the range of atmospheric pressure to about 10 -12 torr.

In addition, it is preferable that the surface modification layer 570 and the front electrode structure 580 are deposited, followed by annealing to improve good electrical and mechanical properties. Annealing is carried out at a temperature in the reactor of 100 ° C to 800 ° C in a vacuum or gas atmosphere for 10 seconds to 3 hours. At least one gas selected from the group consisting of nitrogen, argon, helium, oxygen, hydrogen, and air may be applied to the reactor during the heat treatment.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention defined in the following claims are also within the scope of the present invention.

FIG. 1 is a cross-sectional view showing a horizontal-type light-emitting diode, which is a representative element composed of group III nitride-based semiconductors,

FIGS. 2 to 7 are cross-sectional views illustrating a conventional group III nitride-based semiconductor light-emitting diode device according to one embodiment of the present invention,

8 is a cross-sectional view of a group III nitride-based semiconductor device as a first embodiment manufactured by the present invention,

9 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device having a vertical structure as a second embodiment manufactured by the present invention,

10 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device having a vertical structure as a third embodiment manufactured by the present invention,

11 is a cross-sectional view of a group III nitride-based semiconductor light emitting diode device having a vertical structure as a fourth embodiment manufactured by the present invention.

Claims (21)

A support substrate; A reflective ohmic contact current spreading layer disposed on the support substrate; A first conductive semiconductor layer disposed on the reflective ohmic contact current spreading layer; An active layer disposed on the first conductive semiconductor layer; A second conductive semiconductor layer disposed on the active layer and having a top surface of a nitrogen polarity; An electrode structure disposed on the second conductive semiconductor layer; And And a surface modification layer disposed between the electrode structure and an upper surface of the nitrogen polarity of the second conductivity type semiconductor layer and making the ohmic contact between the second conductivity type semiconductor layer and the electrode structure, The surface modification layer may be formed of at least one selected from the group consisting of S, Se, Te, F, In, Zn, Mg, ), And lanthanum (La) elements, Wherein the surface modification layer is disposed on the entire upper surface of the nitrogen polarity of the second conductivity type semiconductor layer, Wherein the electrode structure is disposed on the entire upper surface of the surface modification layer and comprises a transparent ohmic contact electrode and a reflective electrode pad disposed on at least a portion of the transparent ohmic contact electrode. delete delete The method according to claim 1, Wherein the surface modification layer is made of a compound having a thickness of 5 nanometers (nm) or less. delete The method according to claim 1, Wherein the reflective electrode pad has an electrode structure having a reflectance of 50% or more in a wavelength band of 600 nm or less. delete A group III nitride-based semiconductor light-emitting diode device having a vertical structure represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) has a nitrogen polar surface type nitride semiconductor light-emitting diode device having a nitride-based active layer between a lower nitride-based clad layer made of an n-type conductive semiconductor material and a upper nitride-based clad layer made of a p-type conductive semiconductor material, Board; A wafer bonding layer disposed on the substrate and including a plurality of layers; A reflective current spreading layer on the wafer bonding layer; The upper nitride-based clad layer disposed on the reflective current spreading layer; The active layer on the upper nitride-based clad layer; A lower nitride-based clad layer disposed on the active layer and having a top surface of a nitrogen polarity; An electrode structure on the lower nitride-based clad layer; And And a surface modification layer disposed between the upper surface of the lower nitride layer of the lower nitride-based clad layer and the electrode structure to make ohmic contact with the lower nitride-based clad layer and the electrode structure, The surface modification layer may be formed of one selected from the group consisting of indium (In), zinc (Zn), magnesium (Mg), aluminum (Al) Gallium (Ga), and lanthanum (La) elements, Wherein the surface modification layer is disposed in the entire upper surface region of the nitrogen polarity of the lower nitride- Wherein the electrode structure is disposed on the entire upper surface of the surface modification layer and includes a transparent ohmic contact electrode and a reflective electrode pad disposed on at least a portion of the transparent ohmic contact electrode, . delete delete 9. The method of claim 8, Wherein the surface modification layer is composed of a compound having a thickness of 5 nanometers (nm) or less. delete 9. The method of claim 8, Wherein the reflective electrode pad has a reflectance of 50% or more in a wavelength band of 600 nanometers (nm) or less. 9. The method of claim 8, A superlattice structure interposed between the upper nitride-based clad layer and the reflective current spreading layer and composed of nitride or carbon nitride of Group 2, Group 3, or Group 4 elements Further comprising a third Group III nitride-based semiconductor light-emitting diode device having a vertical structure. delete delete delete delete delete delete delete
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PCT/KR2009/002352 WO2009134109A2 (en) 2008-05-02 2009-05-04 Light-emitting element and a production method therefor
EP09739015.7A EP2290708B1 (en) 2008-05-02 2009-05-04 Light-emitting element and a production method therefor
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WO2007048345A1 (en) 2005-10-27 2007-05-03 Lattice Power (Jiangxi) Corporation SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE FOR N-POLAR InGaAlN SURFACE
KR100815225B1 (en) 2006-10-23 2008-03-19 삼성전기주식회사 Vertically structured light emitting diode device and method of manufacturing the same

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