KR101459770B1 - group 3 nitride-based semiconductor devices - Google Patents
group 3 nitride-based semiconductor devices Download PDFInfo
- Publication number
- KR101459770B1 KR101459770B1 KR1020080041097A KR20080041097A KR101459770B1 KR 101459770 B1 KR101459770 B1 KR 101459770B1 KR 1020080041097 A KR1020080041097 A KR 1020080041097A KR 20080041097 A KR20080041097 A KR 20080041097A KR 101459770 B1 KR101459770 B1 KR 101459770B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- nitride
- electrode structure
- group iii
- ohmic contact
- Prior art date
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The present invention provides a Group III nitride-based semiconductor device having an electrode structure for forming an ohmic contacting interface on the surface of a Group III nitride semiconductor having a nitrogen polar surface exposed to the atmosphere do.
On the other hand, the present invention is characterized in that it comprises an n-type electrode structure which forms an ohmic contacting interface on the top surface of an n-type conductive Group III nitride-based semiconductor having a nitrogen polar surface The light emitting diode device of the vertical structure is provided.
Specifically, the present invention provides a good ohmic contact interface on the top surface of Group III nitride-based semiconductors with a nitrogen polarity surface exhibiting completely different surface behavior than group III nitride-based semiconductor surfaces having Group 3 metal polar surfaces To an electrode structure to be formed.
Group III nitride semiconductor, semiconductor device, light emitting diode device, electroplating, wafer bonding, laser lift off, chemical wet etching, nitrogen polarity, Group 3 metal polarity, ohmic contact interface, electrode structure
Description
The present invention relates to a Group III nitride-based semiconductor device having an electrode structure for forming an ohmic contacting interface on a top surface of a Group III nitride semiconductor having a nitrogen polar surface exposed to the atmosphere, Thereby providing a diode element. In other words, the present invention relates to a group III nitride-based semiconductor having a group 3 group nitride-based semiconductor surface with a completely different surface behavior from a group III nitride-based semiconductor surface having a group 3 metal polar surface. The present invention relates to a group III nitride-based semiconductor device and an LED device having improved electrical or optical characteristics by forming an electrode structure for forming an ohmic contacting interface, and a method of manufacturing the same.
When a forward current of a certain magnitude is applied to a light emitting diode (LED) device, current is converted into light in the active layer in the solid state light emitting structure to generate light. The earliest LED element research and development forms a compound semiconductor such as indium phosphide (InP), gallium arsenide (GaAs), and gallium phosphorus (GaP) in a p-i-n junction structure. The LED emits light of a visible light range of a wavelength band longer than the wavelength of green light, but recently, a device emitting blue and ultraviolet light is also commercialized due to research and development of the group III nitride-based semiconductor material system. Devices, light source devices, and environmental application devices.
As shown in FIG. 2, a light-emitting diode (hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) element made of a Group III nitride-based semiconductor is generally grown on an insulating growth substrate (typically, sapphire) Two electrodes of the group III-V compound semiconductor light-emitting diode device, which are opposite to each other on the opposite sides of the growth substrate, can not be provided, and two electrodes of the LED device must be formed on the upper part of the crystal- . The structures of such conventional Group III nitride-based semiconductor light-emitting diode devices and light-emitting structures for devices are schematically illustrated in FIGS. 1 and 2. FIG.
2, a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device includes a
On the other hand, as shown in FIG. 2, the group III nitride-based semiconductor single crystal is located on the c (0001) planes perpendicularly intersecting the crystal c axis of the sapphire growth substrate. The symmetry elements contained within the fiberglass wurtzite structure indicate that group III nitride-based semiconductor single crystals have a spontaneous polarization along this c-axis. In addition, when the fiber-zinc-zoned crystal structure is non-centrosymmetric, group III nitride-based semiconductor single crystals can additionally show piezoelectric polarization along the c-axis of the crystal. Current group III nitride-based semiconductor single crystal growth techniques for optoelectronic devices use group III nitride-based semiconductor single crystals ending with a group 3-metal polar surface grown along the c-axis. In other words, when Group III nitride-based semiconductor single crystals are grown using growth equipment such as MOCVD or HVPE, the surface in contact with the air is group 3 group metal polarity, while the growth substrate sapphire (10 ) Has a nitrogen polarity.
However, as described above, due to the presence of strong piezoelectric and spontaneous polarization in a group III nitride-based semiconductor single crystal thin film having a definite polar surface, it has been found that the conventional group III nitride-based semiconductor single- The c (0001) plane quantum well structures are affected by the undesired quantum-confined Stark effect. In other words, strong intrinsic electric fields along the c-axis, which is the direction of growth of the semiconductor monocrystal, spatially separate electrons and holes, thereby restricting the recombination efficiency of electrons and holes, reducing the intensity of the oscillator, and causing red- .
Further, the group III nitride-based semiconductor single crystal surface or interface behavior with a definite polar surface is significantly different even in the same situation depending on the Group 3 metal polarity or nitrogen polarity. For example, n-type conductive gallium nitride (n-GaN: Ga) and n-type conductive gallium nitride (n-GaN: N) having a gallium polarity, When Ti / Al, which is the same electrode material, is laminated on the surface, the contacting interface behaves differently depending on the room temperature and the annealing temperature. This has been confirmed in various documents as a main cause of the polarization phenomenon caused on the other polarity surface as described above.
1, the
On the other hand, since the upper nitride-based
Recently, LEDs for white light sources that emit white light by combining three red, blue, and green LED chips or a phosphor with a short wavelength pumping LED have been developed. And its application range is widening. Particularly, the LED element using the group III nitride-based semiconductor single crystal has a high efficiency of converting electrical energy into light energy, an average life span of 5 years or more, and has an advantage of saving energy consumption and maintenance cost Has attracted attention in the field of white light source for next generation illumination. For this purpose, it is necessary to increase the energy conversion efficiency (lm / W) of the packaged light emitting diode device by extracting as much light as possible from the nitride based active layer in the light emitting structure for the group III nitride based semiconductor light emitting diode device. Generally, the external luminous efficiency of the group III nitride-based semiconductor light-emitting diode is surprisingly low. This is because a large difference in refractive index between a group III nitride-based semiconductor including gallium nitride (GaN) or an ohmic contact current spreading layer such as ITO or ZnO and a molding material causes a considerable part of light generated in the LED structure Is totally reflected without being emitted to the outside, proceeds to the inside of the LED again and disappears. For example, assuming that gallium nitride (GaN) has a refractive index of about 2.3 and a refractive index of a molding material of about 1.5, the total amount of light reflected from the junction surface of the two materials is about 90% .
In order to solve this problem, a light emitting structure for a light emitting diode device is grown on a
FIGS. 2 to 7 are sectional views showing a typical manufacturing process of a group III nitride-based semiconductor light-emitting diode device having a vertical structure, as an example of a conventional vertical-structure light-emitting diode device manufacturing technique.
In a general vertical structure light emitting diode device manufacturing method, a light emitting structure for a light emitting diode device is formed on the upper surface of a sapphire growth substrate by using growth equipment such as MOCVD or HVPE, A reflective p-type Ohmic contact electrode structure is formed on the upper surface of the nitride-based clad layer, and then a separately prepared support substrate wafer is subjected to soldering wafer bonding or electro-plating at a temperature of less than 300 ° C. Type sapphire substrate is formed on the reflective p-type ohmic contact electrode structure, and then the sapphire growth substrate is separated from the sapphire substrate to produce a vertical LED structure.
Referring to FIG. 2, an undoped GaN or InGaN buffer layer (not shown), an n-type conductive semiconductor material (not shown) is grown on a
As shown in FIG. 3, after a light emitting structure for a light emitting diode device is formed on the upper surface of the
Then, as shown in FIG. 4, a separate monolayer or
It can then be grown by chemical-mechanical polishing (CMP), chemical etching using a wet etching solution, or thermo-chemical decomposition reaction by irradiating a photon beam with strong energy The
In particular, a light emitting structure for a light emitting diode element that is in contact with the upper surface of the
FIG. 7 is a cross-sectional view showing a vertical-type light-emitting diode device in which a partial n-
The present invention relates to a Group III nitride-based semiconductor top surface of a nitrogen polar surface having completely different surface behavior from a Group III nitride-based semiconductor surface having a Group 3 metal polar surface, and an electrode structure for forming an ohmic contacting interface, thereby improving the electrical or optical characteristics of the group III nitride-based semiconductor device, a light emitting diode device, and a method of manufacturing the same.
In order to achieve the above object, the group III nitride-based semiconductor device according to the present invention exposes the upper surface of a group III nitride-based semiconductor layer having a nitrogen polar surface to the atmosphere, And an electrode structure including a surface modification layer formed on an upper surface of the Group III nitride-based semiconductor layer. Specifically, an interfacial modification layer is interposed between the group III nitride-based semiconductor layer having a nitrogen polar surface and an electrode structure to form an ohmic contact interface.
The surface-modifying layer located on the surface of the Group III nitride-based semiconductor layer having the nitrogen-polarized surface includes one of sulfur (S), selenium (Se), tellurium (Te), and fluorine (S) And a metallic compound bonded to one of the elements of zinc (Zn), magnesium (Mg), aluminum (Al), gallium (Ga) and lanthanum (La). Preferably, the surface modification layer is formed of a metal compound having a thickness of 5 nanometers (nm) or less.
The electrode structure formed on the upper surface of the surface modification layer may be formed of a partial electrode system or a full electrode system.
In order to achieve the above object, the vertical Group III nitride-based semiconductor light emitting diode device according to the present invention includes a lower nitride-based clad layer composed of an n-type conductive semiconductor material having a nitrogen polar surface, A nitride-based active layer having a nitride-based active layer between upper nitride-based cladding layers composed of a conductive semiconductor material, the vertical-structured light-emitting diode device comprising: a lower portion composed of an n-type conductive Group III nitride-based semiconductor material having a nitrogen- And an n-type electrode structure including a surface modification layer on an upper surface of the nitride-based clad layer.
The surface-modifying layer located on the surface of the group III nitride-based semiconductor having the nitrogen polar surface includes one of sulfur (S), selenium (Se), tellurium (Te), and fluorine (S) And a metallic compound bonded to one of the elements Zn, Mg, Al, Ga, and La. Preferably, the surface modification layer is formed of a metal compound having a thickness of 5 nanometers (nm) or less.
Further, n-type electrode structure formed on an upper surface of the surface modification layer is formed from a portion of the electrode structure (partial n -type electrode system) or on the front n-type electrode structure (full n -type electrode system).
The partial n-type electrode structure is formed of a reflective ohmic contacting electrode and a reflective electrode pad which are formed on a part of the upper surface of the surface modification layer and have a reflectance of 50% or more in a wavelength band of 600 nm or less On the other hand, the front n-type electrode structure may include a transparent ohmic contacting electrode formed on the entire upper surface of the surface modification layer and having a transmittance of 70% or more in a wavelength band of 600 nm or less and a transparent ohmic contact electrode And a reflective electrode pad having a reflectance of 50% or more in a wavelength band of 600 nm or less.
According to another aspect of the present invention, there is provided a method of fabricating a group III nitride-based semiconductor light-emitting diode device having a vertical structure including a lower nitride-based clad made of an n-type conductive semiconductor material having a nitrogen polar surface, And a nitride-based active layer between the upper nitride-based clad layer and the upper nitride-based clad layer, the upper nitride-based clad layer being made of a p-type conductive semiconductor material. (Nm) or less on the lower nitride-based clad layer of the vertical structure light-emitting structure for a light-emitting diode device in which the upper nitride-based clad layer, the nitride-based active layer, and the lower nitride- Forming a surface modification layer having a thickness; I. Forming a partial n-type electrode structure including a reflective ohmic contact electrode and a reflective electrode pad on the upper surface of the surface modification layer formed through the steps; All. And performing heat treatment after the above-mentioned steps.
According to still another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: annealing a surface modification layer on the lower nitride-based clad layer before forming the partial n-type electrode structure.
According to still another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a reflective ohmic contact electrode of the partial n-type electrode structure and then performing heat treatment before forming a reflective electrode pad.
According to another aspect of the present invention, there is provided a method of fabricating a group III nitride-based semiconductor light-emitting diode device having a vertical structure including a lower nitride-based clad made of an n-type conductive semiconductor material having a nitrogen polar surface, And a nitride-based active layer between the upper nitride-based clad layer and the upper nitride-based clad layer, the upper nitride-based clad layer being made of a p-type conductive semiconductor material. (Nm) or less on the lower nitride-based clad layer of the vertical structure light-emitting structure for a light-emitting diode device in which the upper nitride-based clad layer, the nitride-based active layer, and the lower nitride- Forming a surface modification layer having a thickness; I. Forming a front n-type electrode structure including a transparent ohmic contact electrode and a reflective electrode pad on the upper surface of the surface modification layer formed through the steps; All. And performing heat treatment after the above-mentioned steps.
According to still another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: heat treating a surface modification layer on the lower nitride-based clad layer before forming the front n-type electrode structure.
According to still another aspect of the present invention, there is provided a method of manufacturing a display device, comprising: forming a transparent ohmic contact electrode of the front n-type electrode structure, followed by heat treatment before forming a reflective electrode pad;
As described above, the present invention provides an electrode structure for forming a good ohmic contacting interface on the top surface of a Group III nitride semiconductor of a nitrogen polar surface, thereby improving the electrical or optical properties of Group 3 A nitride-based semiconductor device and a light emitting diode device can be manufactured.
Hereinafter, a group III nitride-based semiconductor device and a light emitting diode device manufactured according to the present invention will be described in detail with reference to the accompanying drawings.
8 is a cross-sectional view of a group III nitride-based semiconductor device as a first embodiment manufactured by the present invention.
Referring to the drawings, a group III nitride-based semiconductor device includes a
Here, the structure from the
The supporting
Each layer from the
For example, when a gallium nitride (GaN) compound semiconductor is applied as an example, the n-type conductive nitride based semiconductor layer is formed by adding Si, Ge, Se, Te or the like as an n-type dopant to GaN, The semiconductor layer is formed by adding Mg, Zn, Ca, Sr, and Ba as p-type dopants to GaN.
In particular, the group III nitride-based
The
The
The
For example, In2S3 and Cr / Al / Ni / Au may be applied to the
The
In addition, the deposition temperature, which is applied to form the
In addition, it is preferable to improve the electrical and mechanical properties of the
9 is a cross-sectional view of a group III nitride-based semiconductor device as a second embodiment manufactured by the present invention.
Referring to FIG. 1, a Group III nitride-based semiconductor device includes a
Here, the structure from the supporting
The supporting
Each layer from the
For example, when a gallium nitride (GaN) compound semiconductor is applied as an example, the n-type conductive nitride based semiconductor layer is formed by adding Si, Ge, Se, Te or the like as an n-type dopant to GaN, The semiconductor layer is formed by adding Mg, Zn, Ca, Sr, and Ba as p-type dopants to GaN.
In particular, the Group III nitride-based
The
The front electrode structure 340 is formed on the entire upper surface of the
The front electrode structure 340 may include a transparent ohmic contacting electrode having a transmittance of 70% or more in a wavelength band of 600 nm or less and a transparent ohmic contact electrode formed on the transparent ohmic contact electrode and having a transmittance of 50% And a reflective electrode pad having a reflection ratio.
For example, In 2 S 3 and ITO / Cr / Al / Ni / Au may be applied to the
The
In addition, the deposition temperature, which is applied to form the
In addition, it is preferable that the
10 is a cross-sectional view of a group III nitride-based semiconductor light emitting diode device having a vertical structure as a third embodiment manufactured by the present invention.
The light emitting diode device according to one embodiment of the present invention includes two layers of wafer bonding layers 410 and 420, a reflective ohmic contact current spreading
Herein, from the supporting
The supporting
The wafer bonding layers 410 and 420 of the two layers may be any material that forms a mechanically and thermally stable bonding force between the reflective ohmic contact current spreading layer and the supporting
The reflective ohmic contact current spreading
It is possible to improve the ohmic contact through the interface modification before and after the reflective ohmic contact current spreading
The p-type conductive upper nitride-based
The p-type conductive upper nitride-based
The nitride based
The n-type conductive lower nitride-based
The n-type conductive upper nitride-based
Meanwhile, the p-type conductive upper nitride-based
In particular, the n-type conductive upper nitride-based
The
The
The
The
For example, In2S3 and Cr / Al / Ni / Au may be applied to the
The
Also, the deposition temperature, which is applied to form the
Further, after the
11 is a cross-sectional view of a group III nitride-based semiconductor light emitting diode device having a vertical structure as a fourth embodiment manufactured by the present invention.
The light emitting diode device according to an embodiment of the present invention includes two layers of wafer bonding layers 510 and 520, a reflective ohmic contact current spreading
Herein, from the supporting
The supporting
The wafer bonding layers 510 and 520 of the two layers may be any material that can form a mechanically and thermally stable bonding force between the reflective ohmic contact current spreading layer and the
The reflective ohmic contact current spreading
The organic layer may be formed on the surface of the reflective ohmic contact current spreading
The p-type conductive upper nitride-based
The p-type conductive upper nitride-based
The nitride based
The n-type conductive lower nitride-based
The n-type conductive upper nitride-based
Meanwhile, the p-type conductive upper nitride-based
In particular, the n-type conductive upper nitride-based
The
The
The
For example, In 2 S 3 and ITO / Cr / Al / Ni / Au may be applied to the
The
In addition, the deposition temperature, which is applied to form the
In addition, it is preferable that the
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention defined in the following claims are also within the scope of the present invention.
FIG. 1 is a cross-sectional view showing a horizontal-type light-emitting diode, which is a representative element composed of group III nitride-based semiconductors,
FIGS. 2 to 7 are cross-sectional views illustrating a conventional group III nitride-based semiconductor light-emitting diode device according to one embodiment of the present invention,
8 is a cross-sectional view of a group III nitride-based semiconductor device as a first embodiment manufactured by the present invention,
9 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device having a vertical structure as a second embodiment manufactured by the present invention,
10 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device having a vertical structure as a third embodiment manufactured by the present invention,
11 is a cross-sectional view of a group III nitride-based semiconductor light emitting diode device having a vertical structure as a fourth embodiment manufactured by the present invention.
Claims (21)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080041097A KR101459770B1 (en) | 2008-05-02 | 2008-05-02 | group 3 nitride-based semiconductor devices |
US12/990,398 US9059338B2 (en) | 2008-05-02 | 2009-05-04 | Light emitting element and a production method therefor |
PCT/KR2009/002352 WO2009134109A2 (en) | 2008-05-02 | 2009-05-04 | Light-emitting element and a production method therefor |
EP09739015.7A EP2290708B1 (en) | 2008-05-02 | 2009-05-04 | Light-emitting element and a production method therefor |
CN200980115885.7A CN102017203B (en) | 2008-05-02 | 2009-05-04 | Light-emitting element and a production method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080041097A KR101459770B1 (en) | 2008-05-02 | 2008-05-02 | group 3 nitride-based semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090115314A KR20090115314A (en) | 2009-11-05 |
KR101459770B1 true KR101459770B1 (en) | 2014-11-12 |
Family
ID=41556460
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080041097A KR101459770B1 (en) | 2008-05-02 | 2008-05-02 | group 3 nitride-based semiconductor devices |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101459770B1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101101954B1 (en) * | 2010-05-24 | 2012-01-02 | 고려대학교 산학협력단 | Vertical structured group n-type nitride-based semiconductors having electrode structures with diffusion barrier, and light emitting diodes comprising said semiconductors |
KR101731056B1 (en) * | 2010-08-13 | 2017-04-27 | 서울바이오시스 주식회사 | Semiconductor light emitting device having ohmic electrode structure and method of fabricating the same |
US9245742B2 (en) | 2013-12-18 | 2016-01-26 | Asm Ip Holding B.V. | Sulfur-containing thin films |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010000545A (en) * | 2000-10-05 | 2001-01-05 | 유태경 | The multiple wavelength AlGaInN LED device with pumping layer |
WO2007048345A1 (en) | 2005-10-27 | 2007-05-03 | Lattice Power (Jiangxi) Corporation | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE FOR N-POLAR InGaAlN SURFACE |
KR100815225B1 (en) | 2006-10-23 | 2008-03-19 | 삼성전기주식회사 | Vertically structured light emitting diode device and method of manufacturing the same |
-
2008
- 2008-05-02 KR KR1020080041097A patent/KR101459770B1/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010000545A (en) * | 2000-10-05 | 2001-01-05 | 유태경 | The multiple wavelength AlGaInN LED device with pumping layer |
WO2007048345A1 (en) | 2005-10-27 | 2007-05-03 | Lattice Power (Jiangxi) Corporation | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE FOR N-POLAR InGaAlN SURFACE |
KR100815225B1 (en) | 2006-10-23 | 2008-03-19 | 삼성전기주식회사 | Vertically structured light emitting diode device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
KR20090115314A (en) | 2009-11-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6896708B2 (en) | Ultraviolet light emitting device incorporating two-dimensional hole gas | |
US8513694B2 (en) | Nitride semiconductor device and manufacturing method of the device | |
KR100778820B1 (en) | METHOD FOR FORMING METAL ELECTRODE AND MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT AND GaN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT | |
US7491979B2 (en) | Reflective electrode and compound semiconductor light emitting device including the same | |
KR101469979B1 (en) | group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them | |
US20130134475A1 (en) | Semiconductor light emitting device | |
US7022550B2 (en) | Methods for forming aluminum-containing p-contacts for group III-nitride light emitting diodes | |
KR20090115322A (en) | Group 3 nitride-based semiconductor devices | |
KR20070028095A (en) | Light emitting diode having low resistance | |
KR102099440B1 (en) | A method of manufacturing a light emitting device | |
KR101459770B1 (en) | group 3 nitride-based semiconductor devices | |
KR100648812B1 (en) | Galium-nitride light emitting diode and method of fabricating the same | |
JPH04213878A (en) | Semiconductor light-emitting element | |
KR101499954B1 (en) | fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods | |
KR101534846B1 (en) | fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods | |
KR100830643B1 (en) | Method of manufacturing light emitting device | |
KR20090112854A (en) | Group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them | |
Yeh et al. | InGaN flip-chip light-emitting diodes with embedded air voids as light-scattering layer | |
KR20090115631A (en) | Fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods | |
US20140183589A1 (en) | Method for manufacturing a semiconductor light-emitting element and semiconductor light-emitting element manufactured thereby | |
KR101550913B1 (en) | 3 fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods | |
KR101428069B1 (en) | flip-chip structured group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them | |
KR101480552B1 (en) | group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them | |
KR100730755B1 (en) | Method for fabricating a vertical light emitting device and vertical light emitting device thereby | |
KR100730752B1 (en) | Compound semiconductor having supper lattice layer and light emitting diode using the same and method for fabricating the ligth emitting diode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
N231 | Notification of change of applicant | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
J201 | Request for trial against refusal decision | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20181010 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20191010 Year of fee payment: 6 |