KR101534846B1

KR101534846B1 - fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods

Info

Publication number: KR101534846B1
Application number: KR1020080034933A
Authority: KR
Inventors: 송준오
Original assignee: 엘지이노텍 주식회사
Priority date: 2008-04-16
Filing date: 2008-04-16
Publication date: 2015-07-07
Also published as: KR20090109598A

Abstract

The present invention relates to a group III nitride-based semiconductor light-emitting diode device having a vertical structure and a method of manufacturing the same, which includes a partial n-type ohmic contact electrode structure; A light emitting structure for a light emitting diode device comprising a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer below the partial n-type ohmic contact electrode structure; A p-type electrode structure including a current blocking structure and a reflective current spreading layer below the light emitting structure; And a heat sink support formed below the p-type electrode structure, the light generation efficiency and the external quantum efficiency of the nitride based active layer can be increased.

The present invention relates to a group III nitride-based semiconductor light-emitting diode device having a vertical structure and a method for fabricating the same, which includes: a front n-type ohmic contact electrode structure; A light emitting structure for a light emitting diode device comprising a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer below the front n-type ohmic contact electrode structure; A p-type electrode structure including a current blocking structure and a reflective current spreading layer below the light emitting structure; And a heat sink support formed below the p-type electrode structure, the light generation efficiency and the external quantum efficiency of the nitride based active layer can be increased.

More specifically, a growth substrate wafer and a functional bonding wafer, on which the light emitting structure for the group III nitride-based semiconductor light emitting diode device is grown, are bonded to a wafer-to- to-wafer bonding and a lift-off process to provide a group III nitride-based semiconductor light-emitting diode device having a vertical structure and a manufacturing method thereof.

A group III nitride based semiconductor light emitting diode, a light emitting structure for a light emitting diode element, a nitride based current injection layer, a reflective current spreading layer, a superlattice structure, a sacrificial separation layer, a wafer bonding layer, a functional bonding wafer, a current blocking structure, trenches, p-type electrode structures, heat sink supports, wafer-to-wafer bonding, substrate separation,

Description

BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates to a group III nitride-based semiconductor light-emitting diode device having a vertical structure and a fabrication method of the group III nitride-based semiconductor light-

The present invention relates to a method of manufacturing a semiconductor device having a vertical structure using a single crystal group III nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) Group III nitride-based semiconductor light-emitting diode device and a method of manufacturing the same. More specifically, a growth substrate wafer on which a light emitting structure for a group III nitride-based semiconductor light emitting diode device is grown on a growth substrate and a functional bonding wafer manufactured by the present invention are mounted on a wafer Nitride-based semiconductor light-emitting diode device with vertical structure by combining wafer-to-wafer bonding and lift-off processes.

Recently, a light emitting diode (LED) device using a group III nitride-based semiconductor single crystal has been used as a nitride-based active layer. In x Al y Ga 1-xy N (0? X, 0? Y, x + ) The material band has a wide band gap. In particular, according to the composition of In, it is known as a material capable of emitting light in the entire region of visible light, and ultraviolet light can be generated in a microwave region depending on the composition of Al. The light emitting diode manufactured using the light emitting diode, Devices for backlighting, medical light sources including white light sources, and the like, have been widely used, and as the range of applications is gradually expanding and increasing, the development of high quality light emitting diodes is becoming very important.

Since a light-emitting diode (hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) device manufactured from the group III nitride-based semiconductor material is generally grown on an insulating growth substrate (typically, sapphire) -5 group compound semiconductor light emitting diode device, two electrodes of the LED device facing each other on the opposite sides of the growth substrate can not be provided, so that the two electrodes of the LED device must be formed on the upper part of the crystal growth material. The conventional structure of such a group III nitride-based semiconductor light-emitting diode device is schematically illustrated in FIGS. 1 to 4. FIG.

First, referring to FIG. 1, a group III nitride-based semiconductor light emitting diode device includes a sapphire growth substrate 10 and a lower nitride-based clad made of an n-type conductive semiconductor material sequentially grown on the growth substrate 10 Layer 20, a nitride-based active layer 30, and a top nitride-based clad layer 40 made of a p-type conductive semiconductor material. The lower nitride-based cladding layer 20 may be composed of n-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor multilayers, Is a group III nitride-based In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor multilayer composed of different compositions of a multi-quantum well structure . The upper nitride-based cladding layer 40 may be composed of a semiconductor multilayer of p-type In x Al y Ga 1-x-y N (0? X, 0? Y, x + y? 1) In general, the lower nitride-based cladding layer / nitride-based active layer / upper nitride-based cladding layers 20, 30, and 40 formed of the Group III nitride-based semiconductor single crystal are formed by a device such as MOCVD, MBE, HVPE, sputter, . &Lt; / RTI > In order to improve the lattice matching with the sapphire growth substrate 10 prior to the growth of the n-type In x Al y Ga 1-xy N semiconductor as the lower nitride-based cladding layer 20, The buffer layer 201 may be formed therebetween.

As described above, since the sapphire growth substrate 10 is an electrically insulating material, both electrodes of the LED device must be formed on the same top surface in the direction of growth of the monocrystal semiconductor. For this purpose, the upper nitride-based clad layer 40 and the nitride- A part of the upper surface region of the lower nitride-based clad layer 20 is exposed to the atmosphere by etching (i.e., etching) a part of the active layer 30 to form the n-type In an n-type ohmic contact interface electrode and an electrode pad 80 are formed on the upper surface of the x Al y Ga 1-xy N semiconductor.

In particular, since the upper nitride-based clad layer 40 has a relatively high sheet resistance due to a low carrier concentration and a small mobility, An additional material capable of forming the ohmic contact current spreading layer < RTI ID = 0.0 > 501 < / RTI > On the other hand, U.S. Patent No. 5,563,422 discloses a p-type In x Al y Ga 1-xy N (40) cladding layer which is a top nitride-based cladding layer 40 located on the upper layer of the light emitting structure for a group III nitride- A nickel-chromium oxide layer is formed to form an ohmic contact current spreading layer 501 which forms an ohmic contact interface having a low contact resistance in the vertical direction before the p-type electrode 80 is formed on the upper surface of the conductor. Gold (Ni-O-Au).

The ohmic contact current spreading layer 501 is formed on the upper surface of the p-type In x Al y Ga 1-xy N semiconductor which is the upper nitride-based cladding layer 40 while improving the current spreading in the horizontal direction , An ohmic contact interface having a low noncontact resistance in the vertical direction can be formed and current injection can be performed effectively, thereby improving the electrical characteristics of the light emitting diode device. However, the ohmic contact current spreading layer 501 made of oxidized nickel-gold shows an average transmittance as low as 70% even after the heat treatment, and the low light transmittance is lower when the light generated from the light emitting diode device is emitted to the outside , And absorbs a large amount of light, thereby reducing the overall external luminous efficiency.

As described above, in order to obtain a high-luminance light-emitting diode device through a high light transmittance of the ohmic contact current spreading layer 501, a variety of semiconductors including the oxidized nickel-gold (Ni-O- A transparent conductive material such as indium tin oxide (ITO) or zinc oxide (ZnO), which has an average transmittance of 90% or more, has been proposed instead of the Ohmic contact current spreading layer 501 formed of a transparent metal or an alloy. The above-mentioned transparent electroconductive material is a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor (~ 7.5 eV or more (4.7 to 6.1 eV), and p-type In x Al y Ga 1-xy N semiconductor on the upper surface of the semiconductor, and after the subsequent process including the heat treatment, not the ohmic contact interface but the larger noncontact resistance A schottky contact interface is formed, and a new transparent conductive material or a manufacturing process capable of solving the above problems is needed.

A transparent conductive material such as ITO or ZnO is formed on the upper surface of the p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor which is the upper nitride- Recently, YK Su et al. Have reported that the above-mentioned transparent electroconductive material can be used as a good ohmic contact current spreading layer 501 of p-type In x Al y A current spreading layer having an ohmic contact interface via a superlattice structure is formed prior to the direct deposition of Ga 1-xy N (0? X, 0? Y, x + y? 1) 501) formation technology.

2, the superlattice structure has two layers a1 and b1 of a well (b1) and a barrier (a1) in a multi-quantum well structure The thickness of the barrier (a1) of the multiple quantum well structure is relatively thick compared to the thickness of the well (b1), while the thickness of the barrier (a1) of the multiple quantum well structure is thicker than that of the two layers a2, and b2 have a thin thickness of 5 nm or less. Due to the above-described characteristic, the multiple quantum well structure plays a role of confinement of electrons or holes as carriers into a well b1 located between the thick barrier a1, And facilitates the transport of the liquid.

Referring to FIG. 3, a light emitting diode device having an ohmic contact current spreading layer 60 using a superlattice structure proposed by YK Su et al. Will be described. The group III nitride semiconductor light emitting diode device includes a sapphire growth substrate 10 and a lower nitride-based clad layer 20 made of an n-type conductive semiconductor material formed on the upper surface of the growth substrate 10, a nitride-based active layer 30, and a upper nitride-based clad layer 40, and a superlattice structure 90. In particular, the superlattice structure 90 is grown in situ with the same growth equipment as the lower nitride-based cladding layer 20, the nitride-based active layer 30, and the upper nitride-based cladding layer 40 Growth. The lower nitride-based cladding layer 20 may be composed of n-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor multilayers, (0? X, 0? Y, x + y? 1) semiconductor multilayers composed of Group III nitride-based In x Al y Ga 1-xy N (different compositions of a multi-quantum well structure) have. The upper nitride-based cladding layer 40 may be composed of a semiconductor multilayer of p-type In x Al y Ga 1-x-y N (0? X, 0? Y, x + y? Further, the superlattice structure 90 may be formed of Group III nitride-based In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductors or other boards (0? X, 0? Y, x + y? 1) semiconductor multilayers of Group III nitride type In x Al y Ga 1-xy N having a dopant.

Depending on the composition and the type of dopant constituting the superlattice structure 90, the p-type In x Al y Ga 1-xy N (0? X, 0 Y, x + y < / = 1) to increase the net effective hole concentration by lowering the dopant activation energy of the semiconductor, or by quantum tunneling conduction through band- It is known to form an ohmic contact interface through the phenomenon of mechanical tunneling transport.

In general, the lower nitride-based cladding layer / the nitride-based active layer / the upper nitride-based cladding layer / superlattice structure 20, 30, 40, and 90 formed of the Group III nitride-based semiconductor single crystal are formed by MOCVD, MBE, HVPE, , Or a device such as a PLD. In order to improve the lattice matching with the sapphire growth substrate 10 prior to the growth of the n-type In x Al y Ga 1-xy N semiconductor of the lower nitride-based cladding layer 20, The buffer layer 201 may be formed therebetween.

However, the material used for the ohmic contact current spreading layer (501 or 60) composed of the transparent electroconductive material located on the upper surface of the upper nitride-based clad layer (40) has a trade-off relationship between the transmittance and the electric conductivity have. That is, if the thickness of the ohmic contact current spreading layer (501 or 60) is reduced to increase the transmittance, the conductivity of the ohmic contact current spreading layer (501 or 60) is lowered. Conversely, the conductivity of the Group III nitride semiconductor light emitting diode device increases, Resulting in a problem of degradation of device reliability.

Therefore, as a method of not using an ohmic contact current spreading layer composed of a transparent electrically conductive material, in the case of an optically transparent growth substrate, an electrically conductive material having a high reflectance is formed on the upper surface of the nitride- It is conceivable to form the formed ohmic contact current spreading layer 502. This is a cross-sectional view of the group III nitride-based semiconductor light-emitting diode device of the flip-chip structure shown in FIG.

As shown in the figure, a group III nitride-based semiconductor light-emitting diode device having a flip chip structure includes an optically transparent sapphire growth substrate 10 and a lower portion made of an n-type conductive semiconductor material sequentially grown on the growth substrate 10 A nitride-based clad layer 20, a nitride-based active layer 30, and a top nitride-based clad layer 40 made of a p-type conductive semiconductor material. An ohmic contact current spreading layer 502 made of an electrically conductive material having a high reflectance is formed on the upper nitride-based cladding layer 40, and light generated in the nitride-based active layer 30, which is a light emitting structure for a light- Is reflected in the opposite direction by using the ohmic contact current spreading layer 502 having a high reflectivity and is emitted toward the optically transparent growth substrate 10. [

In general, a light emitting diode device which has been widely used by using group III nitride-based semiconductors is generated in ultraviolet to blue-green by using InGaN, AlGaN or the like in the nitride-based active layer 30, ) Sapphire. Since the sapphire used as the growth substrate 10 has a considerably wide band gap, it is transparent to light emitted from the group III nitride-based semiconductor light-emitting diode device. Therefore, the flip chip structure described above can be said to be a very effective means, especially in the group III nitride-based semiconductor light-emitting diode device. However, the flip-chip structure can form a ohmic contact interface with the upper nitride- Are limited. Typically, silver (Ag), aluminum (Al), and rhodium (Rh) are representative metal materials having high reflectance. The silver (Ag), the rhodium (Rh), and the alloys associated therewith exhibit a good ohmic contact interface with the upper nitride-based cladding layer (40), but the metal or alloy of these materials may emit light There has been a problem that diffusion phenomenon of material movement into the structure occurs and the operation voltage of the light emitting diode device rises and reliability is lowered. In addition, the thermally unstable silver (Ag), rhodium (Rh), and alloys associated therewith exhibit low reflectance for ultraviolet rays of a short wavelength region of 400 nm or less, and the ohmic contact current of the light emitting diode device for ultraviolet light But not as a material of the spreading layer 502. On the other hand, the aluminum (Al) and related alloys can not be used because they have a high reflectivity up to the ultraviolet region but form a shock-proof contact interface that is not a preferable ohmic contact interface with the upper nitride- State. Therefore, in order to realize a flip-chip group III nitride-based semiconductor light-emitting diode device, an ohmic contact current spreading layer (having an ohmic contact interface and a high reflectivity on the upper surface of the upper nitride- It is necessary to develop a material or a structure capable of forming the substrate 502.

On the other hand, since the group III nitride-based semiconductor light-emitting diode device having the general structure and flip-chip structure has a horizontal structure and is fabricated on the sapphire growth substrate 10 having low thermal conductivity and electrical insulation, it is inevitably generated when the light- It is difficult to smoothly discharge a large amount of heat, which is a problem with the device.

In addition, as shown and described, in order to form two ohmic contact electrodes and electrode pads, it is necessary to remove a part of the nitride-based active layer 40, thereby reducing the light emitting area and making it difficult to realize a high-quality light emitting diode device. The size of the wafer is reduced by the number of chips, which leads to price competitiveness.

In addition, after the manufacturing process of the light emitting diode device is completed on the wafer, the lapping, polishing, scribing, sawing, and braking breaking of the sapphire growth substrate 10 and the cleavage plane of the group III nitride-based semiconductor during a mechanical process such as etching or breaking of the sapphire substrate 10.

In order to solve the problem of the group III nitride-based semiconductor light-emitting diode device having the horizontal structure described above, the growth substrate 10 is removed so that two ohmic contact electrodes and electrode pads are opposed to the upper and lower portions of the light- A group III nitride-based semiconductor light-emitting diode device having a vertical structure in which an externally applied current flows in one direction to improve light-emitting efficiency is disclosed in many documents (US Pat. No. 6,071,795, US Pat. No. 6,335,263, US 20060189098) have.

30 is a cross-sectional view showing a general manufacturing process of a group III nitride-based semiconductor light emitting diode device having a vertical structure as an example of the prior art. As shown in FIG. 30, in a general vertical structure light emitting diode device manufacturing method, a light emitting structure for a light emitting diode device is formed on a sapphire growth substrate 10 using an MOCVD or MBE growth equipment, A reflective p-type ohmic contact electrode structure 90 is formed on top of the upper nitride-based clad layer 50 present in the uppermost layer of the structure, and then a supporting substrate wafer prepared separately from the growth substrate wafer is heated at a temperature of less than 300 ° C, Bonding the sapphire substrate to the sapphire substrate, and then removing the sapphire substrate to fabricate the vertical LED device.

30, an undoped GaN or InGaN buffer layer 20, a lower nitride-based cladding layer 30, and an undoped GaN-based cladding layer 30 are grown on an upper portion of a sapphire substrate 10 using an MOCVD growth equipment. The nitride-based active layer 40 formed of InGaN and GaN and the upper nitride-based clad layer 50 are sequentially grown to form a light-emitting structure for a light-emitting diode element (FIG. 30A) A reflective p-type ohmic contact electrode structure 90 and a soldering reaction prevention layer 100 are sequentially formed on the substrate 100 to prepare a growth substrate wafer (FIG. 30B). 30C, two ohmic contact electrodes 120 and 130 are formed on the upper and lower portions of the electrically conductive supporting substrate 110, and a soldering material (not shown) for bonding the light emitting structure for the light emitting diode device 140 are deposited to prepare a supporting substrate wafer. Thereafter, the surface of the grown substrate wafer The soldering material diffusion barrier layer 100 and the soldering material 140 of the ground substrate wafer are brought into contact with each other as shown in FIG. 30D to join the soldering wafer. Thereafter, the sapphire growth substrate 10 is irradiated with a laser having a strong energy to the rear surface of the sapphire growth substrate 10, which is the rear surface of the growth substrate wafer on which the plurality of light emitting diode devices are manufactured, from the plurality of light emitting diode devices The undoped GaN or InGaN buffer layer 20 which has been damaged by the laser ( laser lift off; LLO ) is etched to the front side until the lower nitride-based clad layer 30 is exposed using a dry etching process (FIG. 30E), an n-type ohmic contact electrode structure 80 is formed on the lower nitride-based clad layer 30 corresponding to the plurality of light emitting diode devices (FIG. 30F). Finally, the plurality of light emitting diode elements and the electrically conductive support substrate 110 are mechanically (e.g., mechanically, mechanically, electrically, etc.) lapping, polishing, scribing, sawing, A cutting process is performed to separate the light emitting diode into a single light emitting diode device (Fig. 28G).

However, the above-described vertical-structure LED device manufacturing process has various problems as described below, and it is difficult to secure a large number of single-vertically-structured LED devices in a safe manner. That is, since the bonding of the soldering wafer is performed in a low temperature range, a high temperature process which is higher than the soldering wafer bonding temperature can not be performed in a subsequent step, and it is difficult to realize a thermally stable light emitting diode device. Furthermore, since the thermal expansion coefficient and the lattice constant are coupled between different dissimilar wafers, thermal stress is generated at the time of bonding, which seriously affects the reliability of the light emitting diode device.

More recently, in order to solve the problems occurring in a group III nitride-based semiconductor light emitting diode device having a vertical structure manufactured by the above-described soldering wafer bonding, Cu, Ni, etc. are used instead of the electrically conductive supporting substrate formed by soldering wafer bonding A technique of forming a metal thick film on the reflective p-type Ohmic contact electrode structure 90 by an electroplating process has been developed and partially used in the production of products.

However, in the subsequent processes occurring in the LED manufacturing process of the vertical structure manufactured by combining with the electroplating process, that is, mechanical cutting processes such as high temperature heat treatment, lapping, polishing, scribing, sawing, Problems such as degradation of the performance of the device and occurrence of defects still remain as a problem to be solved.

Disclosure of the Invention The present invention has been made in recognition of the above-mentioned problems, and it is an object of the present invention to provide a growth substrate having a group represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) A growth substrate wafer having a p-type electrode structure including a current blocking structure and a reflective current spreading layer, and a support substrate designed by the present inventor, including a light emitting structure for a group III nitride-based semiconductor light emitting diode element, And a method of manufacturing the same. 2. Description of the Related Art

More particularly, the present invention relates to a growth substrate wafer in which a light emitting structure for a group III nitride-based semiconductor light emitting diode device including a superlattice structure and a nitride-based current injection layer is grown on a growth substrate and a functional bonded wafer to wafer bonding, and sequentially removing the growth substrate and the support substrate through a lift-off process to provide a group III nitride-based semiconductor light-emitting diode device having a vertical structure and a method of manufacturing the same.

In order to achieve the above object,

A partial n-type ohmic contact electrode structure; A light emitting structure for a light emitting diode device comprising a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer below the partial n-type ohmic contact electrode structure; A p-type electrode structure including a current blocking structure and a reflective current spreading layer below the light emitting structure; And a heat sink support formed on the lower portion of the p-type electrode structure. The group III nitride-based semiconductor light-emitting diode device of the vertical structure includes:

The partial n-type ohmic contact electrode structure (partial n -type ohmic contacting electrode system) may have a predetermined shape and dimensions of the upper surface on a portion of the lower nitride-based cladding layer, each having at least 50% reflectance in the wavelength region of less than 600nm A reflective ohmic contact electrode and an electrode pad.

The superlattice structure and the nitride-based current injection layer form an ohmic contacting interface with the upper nitride-based clad layer to facilitate easy current injection in the vertical direction current diffusion and diffusion diffusion of the material constituting the reflective current spreading layer into the light emitting structure.

The superlattice structure may also include a transparent multi-layer structure consisting of nitride or carbon nitride of Group 2, Group 3, or Group 4 elements having different dopants and composition elements, -layer film, and the thickness of each layer constituting these superlattice structures is preferably 5 nm or less.

Wherein the nitride based current injection layer is formed on the top surface of the superlattice structure and comprises a transparent single layer composed of nitride or carbon nitride of Group 2, 3, or 4 group elements having a thickness of 6 nm or more layer or a multi-layer film.

The current blocking structure is a structure for uniformly distributing the current applied from the outside to the entire region of the device without being concentrated on one side. The current blocking structure is formed in the same manner as the n-type ohmic contact electrode structure, Position.

In addition, the current blocking structure is an electrically insulating thin film layer directly formed on the upper surface of the current injection layer or a thin film layer forming a schottky contacting interface.

Furthermore, the current blocking structure may have a trench or via-hole shape in which at least a portion of the upper nitride-based clad layer is exposed to the air by etching to at least the upper nitride-based clad layer.

The reflective current spreading layer is composed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less on the current blocking layer or on the top surface of the current injection layer.

The heat-sink support may be formed of an electrically conductive material film having a thickness of at least 10 microns or more, using electro-plating, physical vapor deposition (PVD), chemical vapor deposition (CVD) .

In the group III nitride-based semiconductor light-emitting diode device of the vertical structure of the present invention, the p-type electrode structure can prevent current concentration in the vertical direction and serve as a reflector for light, Or a separate thin film layer capable of performing an antioxidant function of the material.

In place of the superlattice structure located above the light emitting structure for the group III nitride-based semiconductor light emitting diode device, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN having a thickness of 5 nm or less, P-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, and AlInGaN monolayers having the following thicknesses.

On the other hand, by using a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device in which the superlattice structure and one pair of nitride-based current injection layers are repeatedly and repeatedly laminated, Can be manufactured.

In order to achieve the above other object,

A front n-type ohmic contact electrode structure; A light emitting structure for a light emitting diode device comprising a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer below the front n-type ohmic contact electrode structure; A p-type electrode structure including a current blocking structure and a reflective current spreading layer below the light emitting structure; And a heat sink support formed on the lower portion of the p-type electrode structure. The group III nitride-based semiconductor light-emitting diode device of the vertical structure includes:

The front n-type ohmic contact electrode structure (full n -type ohmic contacting electrode system) is transparent ohmic having at least 70% transmittance in the wavelength range of less than the lower forming nitride-based cladding layer region and the ohmic contact interface with the entire upper surface of the 600nm And a reflective electrode pad formed on the upper surface of the transparent ohmic contact electrode and having a reflectance of 50% or more in a wavelength band of 600 nm or less.

Wherein the nitride based current injection layer is formed on the top surface of the superlattice structure and is composed of nitride or carbon nitride containing Group 2, Group 3 or Group 4 element components having a thickness of 6 nm or more It is a transparent single layer or multi-layer film.

The current blocking structure is used to uniformly distribute the current applied from the outside to the entire region of the device without concentrating on one side. The current blocking structure is formed in the same manner as the reflective electrode pad of the n-type ohmic contact electrode structure, Place them facing each other with dimensions.

In order to accomplish the above object, the present invention provides a method of fabricating a vertical structure light emitting diode device using a light emitting structure for a group III nitride-based semiconductor light emitting diode device,

A light emitting structure for a group III nitride-based light emitting diode device composed of a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer containing a buffer layer is successively grown Preparing a grown substrate wafer; Forming a p-type electrode structure including a current blocking structure and a reflective current spreading layer on a top surface of a nitride based current injection layer which is an uppermost portion of the light emitting structure for the light emitting diode device; Preparing a functional bonded wafer in which a sacrificial separation layer, a heat sink support, and a wafer bonding layer are sequentially stacked on an upper surface of a supporting substrate; Forming a composite of the growth substrate wafer and the functional bonded wafer in a wafer-to-wafer manner by wafer bonding; Separating the growth substrate of the growth substrate wafer from the composite; Forming a surface irregularity and a partial n-type ohmic contact electrode structure on the lower nitride-based clad layer of the composite from which the growth substrate has been removed; And separating the supporting substrate of the functional bonded wafer from the composite from which the growth substrate has been removed.

The current blocking structure is opposed to the n-type ohmic contact electrode structure at the same position in the vertical direction as a predetermined shape and dimension.

In addition, the current blocking structure is an electrically insulating thin film layer directly formed on the upper surface of the current injection layer, or a thin film layer forming a schottky contacting interface.

The sacrificial separation layer of the functional bonded wafer is made of a material which is advantageous for separating the supporting substrate. In this case, when a photon-beam having a specific energy band having a strong energy is irradiated and separated, it is preferable to use ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, etching solution, Au, Ag, Pd, SiO2, SiNx, or the like.

The heat sink support of the functional bonded wafer is formed of an electrically conductive material film having a thickness of at least 10 microns or more, using electro-plating, physical vapor deposition (PVD), chemical vapor deposition (CVD) .

The wafer bonding layer present on the growth substrate and the support substrate is formed of an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 300 ° C or higher. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt and Cr.

The partial n-type ohmic contact electrode structure has a predetermined shape and dimensions in a part of the upper surface of the lower nitride-based clad layer, and has a reflective ohmic contact electrode and an electrode pad having a reflectance of 50% or more in a wavelength band of 600 nm or less.

The process of separating the growth substrate and the support substrate uses a chemical-mechanical polishing (CMP) process, a chemical etching process using a wet etching solution, or a thermal-chemical decomposition reaction by irradiating a strong energy photon beam.

The steps of annealing and surface treatment are introduced before and after each step as well as electrical and optical characteristics of the group III nitride-based semiconductor light-emitting diode device, as means for enhancing the mechanical bonding force between the respective layers. .

According to another aspect of the present invention, there is provided a method of fabricating a vertical structure light emitting diode device using a light emitting structure for a group III nitride based semiconductor light emitting diode device,

A light emitting structure for a group III nitride-based light emitting diode device composed of a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer containing a buffer layer is successively grown Preparing a grown substrate wafer; Forming a p-type electrode structure including a current blocking structure and a reflective current spreading layer on a top surface of a nitride based current injection layer which is an uppermost portion of the light emitting structure for the light emitting diode device; Preparing a functional bonded wafer in which a sacrificial separation layer, a heat sink support, and a wafer bonding layer are sequentially stacked on an upper surface of a supporting substrate; Forming a composite of the growth substrate wafer and the functional bonded wafer in a wafer-to-wafer manner by wafer bonding; Separating the growth substrate of the growth substrate wafer from the composite; Forming a surface irregular surface and an entire n-type ohmic contact electrode structure on a lower nitride-based clad layer of the composite from which the growth substrate has been removed; And separating the supporting substrate of the functional bonded wafer from the composite from which the growth substrate has been removed.

The current blocking structure is opposed to the reflective electrode pad of the front n-type ohmic contact electrode structure at the same position in the vertical direction as a predetermined shape and dimension.

Wherein the front n-type ohmic contact electrode structure includes a transparent ohmic contact electrode having an ohmic contact interface with the entire upper surface of the lower nitride-based clad layer and having a transmittance of 70% or more in a wavelength band of 600 nm or less, And a reflective electrode pad having a reflectance of 50% or more in a wavelength band of 600 nm or less.

As described above, since the group III nitride semiconductor light emitting diode of the vertical structure manufactured by the present invention includes the p-type electrode structure having the current blocking structure and the reflective current spreading layer, It is possible to prevent unilateral vertical current injection during driving and to promote horizontal current spreading in the horizontal direction to improve the overall performance of the LED.

In addition, according to the manufacturing method of the group III nitride-based semiconductor light emitting diode of the vertical structure according to the present invention, wafer bending phenomenon at the time of wafer-to-wafer bonding and manufacturing of the light emitting diode structure of a single light emitting diode device without any damage It is possible to improve the processability and yield of a fab process.

Hereinafter, the manufacture of a group III nitride-based semiconductor optoelectronic device, which is a light emitting diode and a device manufactured according to the present invention, will be described in detail with reference to the accompanying drawings.

FIG. 5 is a cross-sectional view showing a first embodiment of a light emitting structure for a group III nitride-based semiconductor light emitting diode device of a vertical structure invented by the present invention.

Referring to FIG. 5, a light emitting structure A for a light emitting diode device having a vertical structure according to a first embodiment of the present invention, which is grown on a growth substrate 10, A nitride-based active layer 30, a top nitride-based clad layer 40 made of a p-type conductive semiconductor material, and a super-nitride-based clad layer 40 made of a p- A lattice structure 90, and a nitride based currant injection layer 100.

The growth substrate 10 may be made of a material such as sapphire or silicon carbide (SiC).

The lower nitride-based clad layer 20 made of the n-type conductive semiconductor material may be formed of In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor multi- And a buffer layer (not shown) formed on the upper surface of the growth substrate 10. The lower nitride-based clad layer 20 may be formed by doping silicon (Si).

The nitride-based active layer 30 is a region where carriers such as electrons and holes are recombined, and includes InGaN, AlGaN, GaN, AlInGaN, and the like.

The nitride-based active layer 30 may be a multilayer film in which a quantum well layer and a barrier layer are repeatedly formed. The energy band gap of the material constituting the barrier layer of the nitride based active layer 30 is larger than the energy band gap of the material constituting the well layer and the thickness of the barrier layer is greater than the thickness of the well layer Thick is common. The barrier layer and the well layer may be binary, ternary or quaternary compound nitride semiconductors represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + have. Furthermore, the barrier layer and the well layer may be formed by doping silicon (Si), magnesium (Mg), or the like. The emission wavelength of light emitted from the light emitting diode device is determined according to the kind of the material constituting the quantum well layer of the nitride-based active layer 30. [

The upper nitride-based clad layer 40 made of the p-type conductive semiconductor material may be formed of a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + have. The upper nitride-based clad layer 40 may be formed by doping zinc (Zn) or magnesium (Mg).

The superlattice structure 90 is formed on the upper surface of the upper nitride-based clad layer 40 made of the p-type conductive semiconductor material, and includes p-type p-type In x Al y Ga 1-xy N (0? y, x + y < / = 1) to increase the effective hole concentration by lowering the activation energy of the semiconductor dopant, or by quantum-mechanical tunneling transport phenomenon through energy band gap control Can cause.

The superlattice structure 90 is generally formed in a multi-layer structure. The thickness of each layer constituting the superlattice structure 90 is 5 nm or less, and each layer is made of InN, InGaN, InAlN, AlGaN, GaN, AlInGaN, AlN, SiC, SiCN , MgN, ZnN, or SiN. For example, the superlattice structure 90 includes InGaN / GaN, AlGaN / GaN, InGaN / GaN / AlGaN, and AlGaN / GaN / InGaN.

Further, each layer of the superlattice structure 90 may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like.

Type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN having a thickness of 5 nm or less, or p-type conductive InGaN or GaN having a thickness of 5 nm or less, instead of the superlattice structure 90 constituted by the multi- , AlInN, AlN, InN, AlGaN, AlInGaN monolayer.

The nitride based current injection layer 100 is a transparent single layer composed of nitride or carbon nitride containing Group 2, Group 3 or Group 4 elements having a thickness of 6 nm or more, Or a multi-layer film.

Further, the nitride based current injection layer 100 may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like. For example, the nitride based current injection layer 100 may include at least one selected from the group consisting of GaN doped with Si, Mg doped GaN, InGaN doped with Si, InGaN doped with Mg, ) Doped AlGaN, and magnesium (Mg) -doped AlGaN.

The light-emitting structure A for the light-emitting diode element having the vertical structure is continuously grown in an in-situ state using a device such as MOCVD, MBE, HVPE, sputter, or PLD. The nitride-based active layer 30, the upper nitride-based clad layer 40, and the superlattice structure 90 of the light-emitting structure A for the vertical-structured light- The nitride based current injection layer 100 may be grown on the upper surface of the superlattice structure 90 in an ex situ state after the growth of the in-situ state.

6 is a cross-sectional view showing a second embodiment of a light emitting structure for a group III nitride-based semiconductor light emitting diode device of a vertical structure invented by the present invention.

Referring to FIG. 6, a light emitting structure B for a light emitting diode device having a flip chip structure according to a first embodiment of the present invention, which is grown on a growth substrate 10, A nitride-based active layer 30, an upper nitride-based cladding layer 40 made of a p-type conductive semiconductor material, and a lower nitride-based cladding layer 20 made of an n-type conductive semiconductor material, A superlattice structure 90 repeatedly stacking, and a nitride based current injection layer 100. [

The superlattice structure 90 repeatedly stacked on the upper nitride-based cladding layer 40 is located on the upper surface of the upper nitride-based cladding layer 40 made of the p-type conductive semiconductor material, and the p-type p-type In x Al y Ga 1-xy N (0? x, 0? y, x + y? 1) to increase the effective hole concentration by lowering the dopant activation energy of the semiconductor, or to control the energy band gap Can lead to quantum-mechanical tunneling transport phenomena.

The nitride based current injection layer 100 repeatedly deposited on top of the superlattice structure 90 is formed of nitride or carbon nitride containing Group 2, Group 3 or Group 4 elements having a thickness of 6 nm or more a single layer or a multi-layer film composed of carbon nitride.

FIG. 7 is a cross-sectional view showing a first embodiment of a group III nitride-based semiconductor light emitting diode device of a vertical structure manufactured according to the present invention.

As shown in the drawing, the lower nitride-based clad layer 20, the nitride-based active layer 30, the upper nitride-based clad layer 40, and the upper nitride-based clad layer are formed on the lower n-type ohmic contact electrode structure 210, A p-type electrode structure 110 composed of a superlattice structure 90, a nitride based current injection layer 100, a current blocking structure 112 and a reflective current spreading layer 111, a material diffusion barrier layer 120, A light emitting diode of a vertical structure including two layers of wafer bonding layers 130 and 170 and a heat sink support 160 is formed.

In more detail, unevenness 200 is formed on the surface of the lower nitride-based clad layer 20, which is a light-emitting surface, advantageously for efficiently emitting light generated in the nitride-based active layer 30 to the outside, Type n-type ohmic contact electrode structure 210 is formed on a part of the upper surface of the lower nitride-based cladding layer 20.

The partial n-type ohmic contact electrode structure 210 is composed of a reflective ohmic contact electrode and an electrode pad having a reflectivity of 50% or more in a wavelength band of 600 nm or less on a partial upper surface region of the lower nitride- In this case, the partial n-type ohmic contact electrode structure 210 is made of a metal silicide such as Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, Group is formed.

Although not shown, a passivation thin film for protecting the nitride-based active layer 30 exposed through the side surface is formed on the side surface of the light emitting diode device of the vertical structure. At this time, the passivation film is formed of an electrically insulating oxide, and is formed of any one selected from the group consisting of SiNx, SiO2, and Al2O3.

A superlattice structure 90 and a nitride based current injection layer 100 are sequentially formed on the lower surface of the upper nitride-based clad layer 40. These superlattice structures 90 and ohmic contacting interface interface of the p-type electrode structure 110 to facilitate current injection in the vertical direction and diffusion barrier of the material constituting the p-type electrode structure 110 into the light emitting structure.

The superlattice structure 90 may also include a nitride or carbon nitride layer containing Group 2, Group 3, or Group 4 element elements having other dopants and compositional elements ). The thickness of each layer constituting these superlattice structures 90 is preferably 5 nm or less.

The nitride based current injection layer 100 is formed on the upper surface of the superlattice structure and includes a nitride or carbon nitride layer containing Group 2, Group 3 or Group 4 element elements having a thickness of 6 nm or more ) Or a multi-layer film made of a transparent material.

The p-type electrode structure 110 formed on the bottom surface of the nitride based current injection layer 100 is basically composed of the current blocking structure 112 and the reflective current spreading layer 111.

The current blocking structure 112 serves to uniformly distribute the current applied from the outside to the entire region of the device without being concentrated on one side. The current blocking structure 112 has a predetermined shape and dimensions similar to the partial n-type ohmic contact electrode structure 210 Place them facing each other.

The current blocking structure 112 is an electrically insulating thin film layer directly formed on the upper surface of the current injection layer 100 or a thin film layer forming a schottky contacting interface. In this case, the current blocking structure 112 may be formed of an electrically insulating oxide film such as SiNx, SiO2, Al2O3, or the like, or an electrically insulating oxide film such as Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, And a metal silicide.

The reflective current spreading layer 111 is formed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less on the upper surface of the current injection layer 100. In this case, the reflective current spreading layer 111 may be formed of a material selected from the group consisting of Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, And is formed of any one selected.

The p-type electrode structure 110 composed of the current blocking structure 112 and the reflective current spreading layer 111 serves to prevent current concentration in the vertical direction and to serve as a reflector for light, And a multi-layer thin film layer capable of improving the bonding property or preventing the oxidation of the material.

The material diffusion barrier layer 120 plays a role of preventing diffusion diffusion between the p-type electrode structure 110 and the wafer bonding layers 130 and 170 at the time of fabricating the vertical LED do.

The material constituting the material diffusion barrier layer 120 is determined depending on the kind of the material constituting the p-type electrode structure 110 and the wafer bonding layers 130 and 170. For example, Pt, Pd, Cu A metal silicide, or a metal silicide. The metal silicide may be selected from the group consisting of Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN,

The wafer bonding layers 130 and 170 are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 degrees or more. In this case, any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr and metallic silicide is formed.

The heat sink support 160 is formed of an electrically conductive material film having a thickness of at least 10 microns or more using electro-plating, physical vapor deposition (PVD), or chemical vapor deposition (CVD) methods. In this case, it is formed of any one selected from the group consisting of Ni, Cu, Nb, CuW, NiCu, NiCr, Au, Ti, Ta, and metal silicide.

Instead of the superlattice structure 90 located above the light emitting structure for the group III nitride-based semiconductor light emitting diode device, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN Or a p-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, or AlInGaN single layer having a thickness of 5 nm or less.

On the other hand, by using a light emitting structure for a group III nitride-based semiconductor light emitting diode device in which one pair of the superlattice structure 90 and the nitride based current injection layer 100 are repeatedly and repeatedly laminated, The light emitting diode device can be manufactured.

8 is a cross-sectional view illustrating a group III nitride-based semiconductor light emitting diode device according to a second embodiment of the present invention.

The nitride-based active layer 30 and the upper nitride-based clad layer 40 are formed on the lower surface of the front n-type ohmic contact electrode structures 220 and 230 having the surface irregularities 200 formed thereon, A superlattice structure 90, a nitride based current injection layer 100, a p-type electrode structure 110 composed of a current blocking structure 112 and a reflective current spreading layer 111, a material diffusion barrier layer 120, , A wafer bonding layer 130 of two layers, and a heat sink support 160, are formed.

In more detail, unevenness 200 is formed on the surface of the lower nitride-based clad layer 20, which is a light-emitting surface, advantageously for efficiently emitting light generated in the nitride-based active layer 30 to the outside, The front n-type ohmic contact electrode structures 220 and 230 are formed on the entire upper surface of the lower nitride-based clad layer 20.

The front n-type ohmic contact electrode structures 220 and 230 form an ohmic contacting interface with the entire upper surface of the lower nitride-based clad layer 20 and have a transmittance of 70% or more in a wavelength band of 600 nm or less Transparent ohmic contact electrode 220 and a reflective electrode pad 230 formed on the transparent ohmic contact electrode and having a reflectance of 50% or more in a wavelength band of 600 nm or less. In this case, the transparent ohmic contact electrode 220 is formed of any one selected from the group consisting of TiN, TiO 2, ITO, ZnO, RuO 2, IrO 2, In 2 O 3, SnO 2, ZnGaO, InZnO, ZnInO, and Ni- The electrode pad 230 is formed of any one selected from the group consisting of Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, and metal silicide .

A superlattice structure 90 and a nitride-based current injection layer 100 are sequentially formed on the lower surface of the upper nitride-based clad layer 40 of the light-emitting diode device having the passivation film formed thereon, And an ohmic contacting interface are formed between the p-type electrode structure 110 and the p-type electrode structure 110 to facilitate current injection in the vertical direction and prevent diffusion of the material constituting the p-type electrode structure 110 into the light emitting structure diffusion barrier.

The current blocking structure 112 serves to uniformly distribute the current applied from the outside to the whole area of the device without concentrating on one side. The current blocking structure 112 may be formed of the same material as the reflective electrode pad 230 of the front n-type ohmic contact electrode structure, Shape and dimensions.

The p-type electrode structure 110 composed of the current blocking structure 112 and the reflective current spreading layer 111 serves to prevent current concentration in the vertical direction and to serve as a reflector for light, And a separate thin film layer capable of improving the bonding property or preventing oxidation of the material.

The wafer bonding layers 130 and 170 are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 degrees or more. In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt and Cr.

The heat sink support 160 is formed of an electrically conductive material film having a thickness of at least 10 microns or more using electro-plating, physical vapor deposition (PVD), or chemical vapor deposition (CVD) methods. In this case, it is formed of any one selected from the group consisting of Ni, Cu, Nb, CuW, NiCu, NiCr, Au, Ti and Ta.

9 is a cross-sectional view showing a third embodiment of a group III nitride-based semiconductor light emitting diode device of a vertical structure manufactured according to the present invention.

As shown in the figure, the lower nitride-based clad layer 20, the nitride-based active layer 30, the upper nitride-based clad layer 40, the super-nitride-based clad layer 30, A p-type electrode structure composed of a lattice structure 90, a nitride based current injection layer 100, a current blocking structure 250 and a reflective current spreading layer 260, a material diffusion barrier layer 270, Layers 280 and 170, and a heat sink support 160 are formed on the surface of the light emitting diode.

In more detail, unevenness 310 is formed on the surface of the lower nitride-based clad layer 20, which is a light-emitting surface, advantageously for efficiently emitting light generated in the nitride-based active layer 30 to the outside, The partial n-type ohmic contact electrode structure 320 is formed on a part of the upper surface of the lower nitride-based cladding layer 20.

The partial n-type ohmic contact electrode structure 320 is composed of a reflective ohmic contact electrode and an electrode pad having a reflectivity of 50% or more in a wavelength band of 600 nm or less on a partial area of the upper surface of the lower nitride-based cladding layer 20. In this case, the partial n-type ohmic contact electrode structure 320 is made of a metal silicide such as Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, Group is formed.

A superlattice structure 90 and a nitride based current injection layer 100 are sequentially formed on the lower surface of the upper nitride-based clad layer 40. These superlattice structures 90 and ohmic contacting interface interface of the p-type electrode structure is formed to facilitate current injection in the vertical direction and diffusion barrier of the material forming the p-type electrode structure into the light emitting structure.

The superlattice structure 90 may also include nitride or carbon nitride containing Group 2, Group 3 or Group 4 elements having other dopants and compositional elements, nitride, and the thickness of each layer constituting these superlattice structures 90 is preferably 5 nm or less.

The p-type electrode structure formed on the bottom surface of the nitride-based current injection layer 100 is composed of a current blocking structure 250 and a reflective current spreading layer 260. The current blocking structure 250 Is etched deeper than the sum of the thickness of the nitride based current injection layer 100 and the thickness of the superlattice structure 90 so that a portion of the upper nitride- trench or via-hole shape exposed to air.

The trenches or via holes of the current blocking structure 250 are connected to the partial n-type ohmic contact electrode 250. The current blocking structure 250 is formed on the surface of the current blocking structure 250, Are positioned facing each other in a predetermined shape and dimension in the same manner as the reflective electrode pad 320 of the structure.

The reflective current spreading layer 260 of the p-type electrode structure is formed on the upper surface or side surface of the nitride based current injection layer 100, the superlattice structure 90, and the upper nitride- Is formed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less. In this case, the reflective current spreading layer 260 may be formed of a material selected from the group consisting of Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, And is formed of any one selected.

The nitride-based current injection layer 100 and the superlattice structure 90 are formed on the upper surface of the upper nitride-based clad layer 40, which is etched in the form of a trench or a via hole and exposed to the atmosphere, The current-reflective reflective current spreading layer 260 of the reflective current spreading layer 260 forms a schottky contacting interface while the reflective current spreading layer 260, which is in contact with the upper surface of the nitride based current injection layer 100 exposed to the atmosphere, (260) forms an ohmic contacting interface.

On the other hand, a part of the current blocking structure 250 in the form of a trench or a via hole is formed of air or an electrically insulating material.

The p-type electrode structure composed of the current blocking structure 250 and the reflective current spreading layer 260 can prevent the current concentration in the vertical direction and serve as a reflector for light, Layer or a multi-layer thin-film layer capable of performing a function of preventing oxidation of the material or improving the properties of the material.

The material diffusion barrier layer 270 prevents diffusion diffusion of material occurring between the reflective current spreading layer 260 of the p-type electrode structure and the wafer bonding layers 280 and 170 during the fabrication of the vertical structure light emitting diode device diffusion barrier.

The material constituting the material diffusion barrier layer 270 is determined depending on the kind of the material constituting the reflective current spreading layer 260 and the wafer bonding layers 280 and 170 of the p-type electrode structure. For example, Selected from the group consisting of Pt, Pd, Cu, Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN, And is formed in any one of them.

The wafer bonding layers 280 and 170 are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 degrees or more. In this case, any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr and metallic silicide is formed.

10 is a cross-sectional view showing a fourth embodiment of a group III nitride-based semiconductor light emitting diode device of a vertical structure manufactured according to the present invention.

The nitride-based active layer 30 and the upper nitride-based clad layer 40 are formed on the lower surface of the front n-type ohmic contact electrode structures 330 and 340 having the surface irregularities 310 formed thereon, A p-type electrode structure composed of a superlattice structure 90, a nitride based current injection layer 100, a current blocking structure 250 and a reflective current spreading layer 260, a material diffusion barrier layer 270, The wafer bonding layers 280 and 170, and the heat sink support 160 are formed.

In more detail, unevenness 310 is formed on the surface of the lower nitride-based clad layer 20, which is a light-emitting surface, advantageously to efficiently emit light generated in the nitride-based active layer 30 to the outside, The front n-type ohmic contact electrode structures 320 and 330 are formed on the entire upper surface of the lower nitride-based clad layer 20.

The front n-type ohmic contact electrode structures 330 and 340 form an ohmic contacting interface with the entire upper surface of the lower nitride-based clad layer 20 and have a transmittance of 70% or more in a wavelength band of 600 nm or less Transparent ohmic contact electrode 330 and a reflective electrode pad 340 formed on the transparent ohmic contact electrode and having a reflectance of 50% or more in a wavelength band of 600 nm or less. In this case, the transparent ohmic contact electrode 330 is formed of any one selected from the group consisting of TiN, TiO, ITO, ZnO, RuO2, IrO2, In2O3, SnO2, ZnGaO, InZnO, ZnInO, and Ni- The electrode pad 340 is formed of any one selected from the group consisting of Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, and metal silicide .

The current blocking structure 250 serves to uniformly distribute the current applied from the outside to the entire region of the device without being concentrated on one side. The trench or via hole of the current blocking structure 250 is formed on the front n- Are positioned facing each other in a predetermined shape and dimension in the same manner as the reflective electrode pad 340 of the structure.

11 to 19 are cross-sectional views illustrating a method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure according to an embodiment of the present invention.

11 is a cross-sectional view of a growth substrate wafer on which a light emitting structure for a group III nitride-based semiconductor light emitting diode device is grown on a growth substrate.

11, a lower nitride-based clad layer 20, a nitride-based active layer 30, and a p-type conductivity-based clad layer 20, which are basically composed of an n-type conductive single crystal semiconductor material, are formed on the growth substrate 10 A superlattice structure 90, and a nitride based current injection layer 100, which are made of a single crystal semiconductor material.

More specifically, the lower nitride-based clad layer 20 may be composed of an n-type conductive GaN layer and an AlGaN layer, and the nitride-based active layer 30 may be formed of a multi-quantum well structure And an undoped InGaN layer and a GaN layer. The upper nitride-based clad layer 40 may be composed of a p-type conductive GaN layer and an AlGaN layer. Based nitride cladding layer 20 and the nitride-based cladding layer 20 before the light-emitting structure for a basic light-emitting diode element composed of the Group III nitride-based semiconductor layer described above is grown by a well-known process such as MOCVD or MBE single crystal growth, Another buffer layer (not shown) such as InGaN, AlN, SiC, SiCN, or GaN is formed on the uppermost growth surface of the growth substrate 10 to improve the lattice matching with the growth surface of the growth substrate 10 It is preferable to further form the film. The superlattice structure 90 formed on the upper nitride clad layer 40 and the nitride based current injection layer 100 form an ohmic contacting interface with the upper nitride clad layer 40. Thereby facilitating current injection in the vertical direction and preventing diffusion of the material constituting the p-type electrode structure 110 into the light emitting structure. The superlattice structure 90 may be formed of InGaN / GaN doped with silicon (Si). The thickness of the InGaN doped with silicon (Si) and the thickness of GaN doped with silicon (Si) forming the superlattice structure 90 is preferably 5 nm or less. The nitride based current injection layer 100 may be composed of magnesium (Mg) -doped GaN having a thickness of 6 nm or more.

12 is a cross-sectional view sequentially showing a p-type electrode structure composed of a current blocking structure and a reflective current spreading layer, a material diffusion barrier layer, and a wafer bonding layer in an upper layer of a growth substrate wafer.

A p-type electrode structure 110 composed of a current blocking structure 112 and a reflective current spreading layer 111 is formed on the nitride based current injection layer 100. The current blocking layer 112 is preferably an electrically insulating thin film layer or a thin film layer forming a schottky contacting interface. In this case, the current blocking structure 112 may be composed of an electrically insulating oxide film layer such as SiNx, SiO2, Al2O3, or the like.

The reflective current spreading layer 111 is preferably formed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less on the upper surface of the current injection layer 100. In this case, the reflective current spreading layer 111 may be made of Ag or an alloy of Ag-related alloy.

In addition, the p-type electrode structure 110 composed of the current blocking structure 112 and the reflective current spreading layer 111 can prevent current concentration in the vertical direction and serve as a reflector for light, It is preferable to include a separate thin film layer capable of improving the bonding and bonding properties between the layers, or preventing oxidation of the material.

The material diffusion barrier layer 120 serves to prevent diffusion of a substance generated between the p-type electrode structure 110 and the wafer bonding layer 130 during device fabrication. The material diffusion barrier layer 120 may comprise TiW or TiWN.

The wafer bonding layer 130 may be made of Au or an Au-related alloy, which is an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 300 degrees or more.

13 is a cross-sectional view of a multi-functional bonding wafer including a supporting substrate proposed by the present inventors.

Referring to FIG. 13, a sacrificial separation layer 150, a heat sink support 160, and a wafer bonding layer 170 are sequentially formed on a top surface of a support substrate 140.

The supporting substrate 140 is preferably selected so as to suppress wafer bending and crystal defects introduced into the light emitting diode for the light emitting diode device during wafer-to-wafer bonding, Further, if the thermal expansion coefficient of the growth substrate 101 is the same or similar to that of the growth substrate 101, it is not limited to use. The support substrate 140 may be a sapphire substrate wafer.

The sacrificial separation layer 150 is not limited to use as long as it is a chemical mechanical polishing (CMP), a chemical wet etching solution, or a material in which a decomposition reaction using a photon beam of a specific wavelength band occurs. The sacrificial separation layer 150 may be made of InGaN, ZnO, or GaN.

The heat sink support 160 is a single layer or multilayer structure composed of a metal, an alloy or a solid solution and furthermore the heat sink support 302 has a deposition rate of Rapid electroplating, physical vapor deposition (PVD), and chemical vapor deposition (CVD) methods. The wafer bonding layer 402 may be composed of Cu or Ni.

The wafer bonding layer 170 may be made of Au or an Au-related alloy, which is an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 300 degrees or more.

FIG. 14 is a schematic view illustrating a wafer-to-wafer bonding of a multi-functional wafer including a growth substrate wafer on which a light emitting structure for a group III nitride-based semiconductor light emitting diode device is formed and a support substrate, &Lt; / RTI >

14, a composite body C having a wafer bonding interface 180 is formed by a wafer bonding process between a wafer bonding layer 130 of the growth substrate wafer and a wafer bonding layer 170 of the functional bonding wafer .

The wafer bonding is preferably performed by applying a predetermined hydrostatic pressure at a temperature of from room temperature to 700 ° C or less and in an atmosphere of vacuum, oxygen, argon, or nitrogen gas Do.

Further, a surface treatment and a heat treatment process may be introduced to improve the mechanical bonding force between the two materials 130 and 170 and / or the ohmic contact interface formation before and / or after the wafer bonding.

15 is a cross-sectional view showing a process of lift-off a growth substrate in a wafer bonded composite.

The process of lifting off the growth substrate 10, which is a part of the growth substrate wafer in the wafer-bound composite (C), can be carried out by chemically-mechanically polishing or etching the solution according to the optical and chemical properties of the growth substrate 10 At least one of chemical-wet etching, or a thermal-chemical decomposition process using a photon beam, is used.

Referring to FIG. 15, an example of the process of separating the growth substrate 10 includes a laser 190 of a laser photon beam 190 used only when the growth substrate 10 is optically transparent, such as sapphire and AlN substrates, Is a process for separating a substrate. More specifically, although the light 190 of the laser beam having a strong energy penetrates through the rear surface of the transparent growth substrate 10 without absorption, the band gap wavelength of the buffer layer (not shown), which is the light emitting structure for the light emitting diode device, Is longer than the light wavelength of the beam, so that the laser beam is absorbed and a temperature of 700 ° C or more is generated to thermally-chemically decompose the buffer layer (not shown) to separate the growth substrate 10.

16 is a cross-sectional view of a composite in which surface irregularities are introduced on the lower nitride-based clad layer after the growth substrate of the growth substrate wafer is separated.

Referring to FIG. 16, as a process step after the growth substrate 10 is stably removed, the lower nitride-based clad layer 20 is etched to be exposed to air using chemical wet etching or dry etching , The unevenness (200) is performed on the surface of the lower nitride-based clad layer (20) exposed to the atmosphere by wet or dry etching.

17 is a cross-sectional view of a composite in which an n-type ohmic contact electrode structure is formed on a part of the upper surface of a nitride-based clad layer on which surface irregularities have been formed.

Referring to FIG. 17A, a partial n-type ohmic contact electrode structure 210 is formed on a part of a top surface of a lower nitride-based clad layer 20 having surface irregularities 200 formed thereon. It is preferable that the partial n-type ohmic contact electrode structure 210 is formed of a reflective material having a reflectance of 50% or more in a wavelength band of 600 nm or less. In this case, the partial n-type ohmic contact electrode structure 210 may be made of Cr / Al / Cr / Au.

The partial n-type Ohmic contact electrode structure 210 has the same shape and dimensions as those of the current blocking structure 112 of the p-type electrode structure 110 formed on the upper surface of the upper nitride-based cladding layer 40, In the vertical direction from the viewpoint of the light emitting diode cross section.

Referring to FIG. 17B, the front n-type ohmic contact electrode structures 220 and 230 are formed on a part of the upper surface of the lower nitride-based clad layer 20 where the surface irregularities 200 are formed. The front n-type ohmic contact electrode structures 220 and 230 form an ohmic contacting interface with the entire upper surface of the lower nitride-based clad layer 20 and have a transmittance of 70% or more in a wavelength band of 600 nm or less Transparent ohmic contact electrode 220 and a reflective electrode pad 230 formed on the upper surface of the transparent ohmic contact electrode and having a reflectance of 50% or more in a wavelength band of 600 nm or less. In this case, the transparent ohmic contact electrode 220 may be made of ITO, InZnO, or ZnInO, and the reflective electrode pad 230 may be made of Ag / Ti / Pt / Au.

Further, in order to improve the performance of the light emitting diode device having a vertical structure before or after forming the partial or total n-type ohmic contact electrode structures 210, 220, and 230 on the upper nitride clad layer 20, surface treatment or heat treatment may be performed.

18 is a cross-sectional view illustrating a process of lifting off a support substrate in a wafer bonded composite.

The process of separating the supporting substrate 140, which is a part of the functional bonded wafer in the combined composite (C), may be performed by chemical-mechanical polishing depending on the optical and chemical properties of the supporting substrate 140, chemical wet etching using an etching solution, At least one of the thermal-chemical decomposition processes using a photon beam is used.

Referring to FIG. 18, a laser photon beam 240, which is used only when the supporting substrate 140 is optically transparent, such as a sapphire and an AlN substrate, Is a process for separating a support substrate. More specifically, although the laser beam 240 having a strong energy penetrates through the rear surface of the transparent support substrate 140 without absorption, the band gap wavelength of the sacrifice layer 150, which is the light emitting structure for the light emitting diode device, Which is longer than the light wavelength of the beam, absorbs the light of the laser beam and generates a temperature of 700 ° C or higher, thereby thermally-chemically decomposing the sacrifice layer 150 and separating the supporting substrate 140.

FIG. 19 is a cross-sectional view showing a light emitting diode device of a vertical structure finally completed after removing a sacrificial layer and a wafer bonding layer in a wafer bonded composite. FIG.

19A, the lower nitride-based clad layer 20, the nitride-based active layer 30, the upper nitride-based clad layer 40, and the upper nitride-based clad layer 40 are formed on the lower surface of the partial n-type ohmic contact electrode structure 210, A p-type electrode structure 110 composed of a superlattice structure 90, a nitride based current injection layer 100, a current blocking structure 112 and a reflective current spreading layer 111, a material diffusion barrier layer 120, A light emitting diode of a vertical structure including two layers of wafer bonding layers 130 and 170 and a heat sink support 160 is formed.

19B, a lower nitride-based clad layer 20, a nitride-based active layer 30, and a upper nitride-based clad layer 40 (see FIG. 19) are formed on the lower surface of the front n-type ohmic contact electrode structures 220, A p-type electrode structure 110 composed of a superlattice structure 90, a nitride based current injection layer 100, a current blocking structure 112 and a reflective current spreading layer 111, a material diffusion barrier layer 120 ), A wafer bonding layer 130, 170 of two layers, and a heat sink support 160 are formed.

20 to 29 are cross-sectional views illustrating a method of manufacturing a group III nitride-based semiconductor light emitting diode device having a vertical structure according to an embodiment of the present invention.

20 is a cross-sectional view of a growth substrate wafer on which a light emitting structure for a group III nitride-based semiconductor light emitting diode device is grown on a growth substrate.

20, a lower nitride-based clad layer 20, a nitride-based active layer 30, and a p-type conductivity-based clad layer 20, which are basically composed of an n-type conductive single crystal semiconductor material, are formed on the growth substrate 10 A superlattice structure 90, and a nitride based current injection layer 100, which are made of a single crystal semiconductor material.

More specifically, the lower nitride-based clad layer 20 may be composed of an n-type conductive GaN layer and an AlGaN layer, and the nitride-based active layer 30 may be formed of a multi-quantum well structure And an undoped InGaN layer and a GaN layer. The upper nitride-based clad layer 40 may be composed of a p-type conductive GaN layer and an AlGaN layer. Based nitride cladding layer 20 and the nitride-based cladding layer 20 before the light-emitting structure for a basic light-emitting diode element composed of the Group III nitride-based semiconductor layer described above is grown by a well-known process such as MOCVD or MBE single crystal growth, Another buffer layer (not shown) such as InGaN, AlN, SiC, SiCN, or GaN is formed on the uppermost growth surface of the growth substrate 10 to improve the lattice matching with the growth surface of the growth substrate 10 It is preferable to further form the film. The superlattice structure 90 formed on the upper nitride clad layer 40 and the nitride based current injection layer 100 form an ohmic contacting interface with the upper nitride clad layer 40. Thereby facilitating current injection in the vertical direction and preventing diffusion of the material constituting the p-type electrode structure 110 into the light emitting structure. The superlattice structure 90 may be formed of InGaN / GaN doped with silicon (Si). The thickness of the InGaN doped with silicon (Si) and the thickness of GaN doped with silicon (Si) forming the superlattice structure 90 is preferably 5 nm or less. The nitride based current injection layer 100 may be composed of silicon (Si) -doped GaN having a thickness of 6 nm or more.

21 is a cross-sectional view in which a trench or a via hole is formed in an upper portion of a light emitting structure for a light emitting diode element to form a current blocking structure in an upper layer portion of a growth substrate wafer.

The current blocking structure 250 of the trench or via hole allows the current applied from the outside to be uniformly dispersed in the entire region of the device without being concentrated on one side. The nitride based current injection layer 100 Etching a portion of the upper nitride-based cladding layer 40 by a depth greater than the thickness h of the thickness of the superlattice structure 90 and the thickness of the superlattice structure 90 to form a trench or And has a via-hole shape. The trenches or via holes of the current blocking structure 250 are positioned opposite to each other in a predetermined shape and dimension like the reflective electrode pads 330 of the n-type ohmic contact electrode structure.

22 is a cross-sectional view sequentially showing a p-type electrode structure, a material diffusion barrier layer, and a wafer bonding layer, which are composed of a current blocking structure and a reflective current spreading layer in an upper portion of a light emitting structure for a light emitting diode device in which a trench or a via hole is formed.

Based current injection layer 100 exposed to the air to complete the p-type electrode structure composed of the current blocking structure 250 and the reflective current spreading layer 260, the superlattice structure 90, And a current blocking structure 250 having a trench or via hole shape surrounded by an upper surface or a side surface of the upper nitride-based cladding layer 40 is formed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less. In this case, the reflective current spreading layer 260 may be made of an Al or Al-related alloy.

The material diffusion barrier layer 270 serves to prevent diffusion of a substance occurring between the p-type electrode structure 110 and the wafer bonding layer 130 during device fabrication. The material diffusion barrier layer 120 may comprise TiW or TiWN.

The wafer bonding layer 280 may be made of Au or an Au-related alloy, which is an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 300 degrees or more.

23 is a cross-sectional view of a multi-functional bonding wafer including a supporting substrate proposed by the present inventors.

Referring to FIG. 23, a sacrificial separation layer 150, a heat sink support 160, and a wafer bonding layer 170 are sequentially formed on an upper surface of a support substrate 140.

The heat sink support 160 is a single layer or multilayer structure composed of a metal, an alloy or a solid solution and furthermore the heat sink support 302 has a deposition rate of It is desirable to use fast electroplating, physical vapor deposition (PVD), chemical vapor deposition (CVD) methods. The wafer bonding layer 402 may be composed of Cu or Ni.

24 is a schematic view showing a wafer-to-wafer bonding of a multi-functional wafer including a growth substrate wafer on which a light emitting structure for a group III nitride-based semiconductor light emitting diode device is formed and a support substrate, &Lt; / RTI >

24, a composite D having a wafer bonding interface 290 is formed by a wafer bonding process between the wafer bonding layer 280 of the growth substrate wafer and the wafer bonding layer 170 of the functional bonding wafer .

The wafer bonding is preferably carried out by applying a predetermined hydrostatic pressure at a temperature of from room temperature to 700 ° C or less and in an atmosphere of vacuum, oxygen, argon, or nitrogen gas Do.

Furthermore, a surface treatment and a heat treatment process may be introduced to improve the mechanical bonding force between the two materials 280 and 170 and the formation of the ohmic contact interface before and after the wafer bonding.

25 is a cross-sectional view illustrating a process of lifting off a growth substrate in a wafer bonded composite.

The step of lifting off the growth substrate 10 which is a part of the growth substrate wafer in the wafer-bound composite D may be carried out by chemically-mechanically polishing or etching the solution according to the optical and chemical properties of the growth substrate 10 At least one of chemical-wet etching, or a thermal-chemical decomposition process using a photon beam, is used.

Referring to FIG. 25, a laser photon beam 300, which is used only when the growth substrate 10 is optically transparent, such as a sapphire and an AlN substrate, Is a process for separating a substrate. More specifically, although the laser beam 300 having a strong energy penetrates through the rear surface of the transparent growth substrate 10 without absorption, the band gap wavelength of the buffer layer (not shown), which is the light emitting structure for the light emitting diode device, Is longer than the light wavelength of the beam, so that the laser beam is absorbed and a temperature of 700 ° C or more is generated to thermally-chemically decompose the buffer layer (not shown) to separate the growth substrate 10.

26 is a cross-sectional view of a composite in which surface irregularities are introduced on the lower nitride-based clad layer after the growth substrate of the growth substrate wafer is separated.

Referring to FIG. 26, as a process step after the growth substrate 10 is stably removed, the lower nitride-based clad layer 20 is etched to be exposed to air using chemical wet etching or dry etching , The unevenness 310 is performed on the surface of the lower nitride-based clad layer 20 exposed to the atmosphere by wet or dry etching.

27 is a cross-sectional view of a composite in which an n-type ohmic contact electrode structure is formed on a part of the upper surface of a nitride-based clad layer on which surface irregularities have been formed.

Referring to FIG. 27A, a partial n-type ohmic contact electrode structure 320 is formed on a part of the upper surface of the lower nitride-based clad layer 20 where the surface irregularities 310 are formed. It is preferable that the partial n-type ohmic contact electrode structure 320 is formed of a reflective material having a reflectance of 50% or more in a wavelength band of 600 nm or less. In this case, the partial n-type ohmic contact electrode structure 320 may be composed of Cr / Al / Cr / Au.

The partial n-type ohmic contact electrode structure 320 has the same shape and dimensions as the trench or via hole, which is the current blocking structure 250 of the p-type electrode structure formed on the upper surface of the upper nitride-based cladding layer 40, And are opposed to each other at the same position in the vertical direction from the viewpoint of the sectional view of the light emitting diode.

Referring to FIG. 27B, the front n-type ohmic contact electrode structures 330 and 340 are formed on a part of the upper surface of the lower nitride-based clad layer 20 where the surface irregularities 310 are formed. The front n-type ohmic contact electrode structures 330 and 340 form an ohmic contacting interface with the entire upper surface of the lower nitride-based clad layer 20 and have a transmittance of 70% or more in a wavelength band of 600 nm or less Transparent ohmic contact electrode 330 and a reflective electrode pad 340 formed on the transparent ohmic contact electrode and having a reflectance of 50% or more in a wavelength band of 600 nm or less. In this case, the transparent ohmic contact electrode 330 may be composed of ITO, InZnO, or ZnInO, and the reflective electrode pad 340 may be composed of Ag / Ti / Pt / Au.

Further, in order to improve the performance of the light emitting diode device having a vertical structure before / after forming the partial or whole n-type ohmic contact electrode structures 320, 330, and 340 on the upper nitride clad layer 20, surface treatment or heat treatment may be performed.

28 is a cross-sectional view illustrating a process of lifting off a support substrate in a wafer bonded composite.

The process of separating the supporting substrate 140, which is a part of the functional bonded wafer from the combined complex (D), may be carried out by chemical-mechanical polishing, chemical wet etching using an etching solution, or the like depending on the optical and chemical properties of the supporting substrate 140 At least one of the thermal-chemical decomposition processes using a photon beam is used.

Referring to FIG. 28, in an embodiment of the process of separating the support substrate 140, a laser 350 of a laser photon beam used only when the support substrate 140 is optically transparent, such as a sapphire and an AlN substrate, Is a process for separating a support substrate. More specifically, although the light 350 of the laser beam having a strong energy penetrates through the rear surface of the transparent support substrate 140 without absorption, the band gap wavelength of the sacrifice layer 150, which is the light emitting structure for the light emitting diode device, Which is longer than the light wavelength of the beam, absorbs the light of the laser beam and generates a temperature of 700 ° C or higher, thereby thermally-chemically decomposing the sacrifice layer 150 and separating the supporting substrate 140.

FIG. 29 is a cross-sectional view showing a light emitting diode device of a vertical structure finally completed after removing the sacrificial layer and the wafer bonding layer in the wafer bonded composite. FIG.

29A, the lower nitride-based clad layer 20, the nitride-based active layer 30, the upper nitride-based clad layer 40, and the upper nitride-based clad layer 40 are formed on the lower surface of the partial n-type ohmic contact electrode structure 320, A p-type electrode structure composed of a superlattice structure 90, a nitride based current injection layer 100, a current blocking structure 250 and a reflective current spreading layer 260, a material diffusion barrier layer 270, A light emitting diode, which is a light emitting device having a vertical structure including bonding layers 280 and 170 and a heat sink support 160, is formed.

29B, a lower nitride-based clad layer 20, a nitride-based active layer 30, and a upper nitride-based clad layer 40 (see FIG. 29) are formed on the bottom surface of the front n-type Ohmic contact electrode structures 330, A p-type electrode structure composed of a superlattice structure 90, a nitride based current injection layer 100, a current blocking structure 250 and a reflective current spreading layer 260, a material diffusion barrier layer 270, The wafer bonding layers 280 and 170, and the heat sink support 160 are formed.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention as defined by the appended claims. something to do.

FIG. 1 is a cross-sectional view showing a typical example of a conventional Group III nitride-based semiconductor light-emitting diode device,

2 is a cross-sectional view for explaining a multi-quantum well structure and a superlattice structure,

3 is a cross-sectional view showing a typical example of a conventional Group III nitride-based semiconductor light-emitting diode device,

4 is a cross-sectional view showing a representative example of a group III nitride-based semiconductor light-emitting diode device having a conventional flip chip structure,

5 is a cross-sectional view illustrating a first embodiment of a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device of a vertical structure invented by the present invention,

6 is a cross-sectional view showing a second embodiment of a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device of a vertical structure invented by the present invention,

FIG. 7 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device according to a first embodiment of the present invention,

FIG. 8 is a cross-sectional view illustrating a group III nitride-based semiconductor light-emitting diode device according to a second embodiment of the present invention,

FIG. 9 is a cross-sectional view of a group III nitride-based semiconductor light emitting diode device according to a third embodiment of the present invention,

10 is a sectional view showing a fourth embodiment of a group III nitride-based semiconductor light emitting diode device of a vertical structure manufactured according to the present invention,

11 to 19 are cross-sectional views illustrating a method of manufacturing a group III nitride-based semiconductor light emitting diode device having a vertical structure according to an embodiment of the present invention.

20 to 29 are cross-sectional views illustrating a method of manufacturing a group III nitride-based semiconductor light-emitting diode device having a vertical structure according to an embodiment of the present invention,

30 is a cross-sectional view showing a manufacturing process of a group III nitride-based semiconductor light emitting diode having a vertical structure according to the prior art.

Claims

A nitride based active layer, a top nitride based clad layer, a superlattice structure, and a nitride based current injection layer;

An n-type ohmic contact electrode structure disposed on a part of an upper surface of the light emitting structure;

A p-type electrode structure including a current blocking structure and a reflective current spreading layer below the light emitting structure;

And a heat sink support formed below the p-type electrode structure,

The current blocking structure is formed by etching at least the upper nitride-based clad layer to form a group of vertical structures having a trench or a via-hole shape in which a part of the upper nitride-based clad layer is exposed to air III nitride based semiconductor light emitting diode device.

The method according to claim 1,

The superlattice structure is a transparent multi-layer structure composed of nitride or carbon nitride of Group 2, Group 3 or Group 4 elements having different dopants and composition elements. layer structure, and each layer of the superlattice structure has a thickness of 5 nm or less, and the group III nitride-based semiconductor light-emitting diode device has a vertical structure.

The method according to claim 1,

The nitride-based current injection layer is formed on the upper surface of the superlattice structure. The nitride-based current injection layer has a thickness of 6 nm or more, and includes Group 2, Group 3, and Group 3 elements having different dopants and composition elements. Or a transparent single-layer or multi-layer vertical structure group III nitride-based semiconductor light-emitting diode device composed of a nitride or carbon nitride of a Group 4 element.

The method according to claim 1,

The current blocking structure is positioned vertically opposite to the n-type ohmic contact electrode structure in a predetermined shape and dimension, as in the case of the n-type ohmic contact electrode structure.

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The method according to claim 1,

Wherein the reflective current spreading layer is formed on the current blocking layer or on the top surface of the current injection layer by a group III nitride-based system having a vertical structure composed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less Semiconductor light emitting diode device.

The method according to claim 1,

The heat-sink support may be an electroconductive material film having a thickness of at least 10 microns or more, such as an electro-conductive material, such as an electro-plating material, a physical vapor deposition (PVD), or a chemical vapor deposition Group III nitride-based semiconductor light-emitting diode device.

The method according to claim 1,

The p-type electrode structure includes a separate thin film layer that can prevent current diffusion in the vertical direction and serve as a reflector for light, prevent diffusion of materials, improve bonding and bonding properties between materials, or prevent oxidation of materials Group III nitride-based semiconductor light-emitting diode device.

The method according to claim 1,

Type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN having a thickness of not more than 5 nm or p-type conductive InGaN, GaN, AlInN, AlN, InN , AlGaN, and AlInGaN monolayer can be substituted for a group III nitride-based semiconductor light-emitting diode device.

The method according to claim 1,

Type nitride semiconductor light-emitting diode device using a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device in which one pair of the superlattice structure and the nitride-based current injection layer is repeatedly and repeatedly laminated.

The method according to claim 1,

The n-type ohmic contact electrode structure (partial n -type ohmic contacting electrode system) is the lower nitride-based cladding layer and has a predetermined shape and dimensions of the top face part area, having a reflectivity of 50% or more reflectivity in the wavelength region of less than 600nm Group III nitride-based semiconductor light-emitting diode device.

n-type ohmic contact electrode structure;

A light emitting structure for a light emitting diode device comprising a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer below the n-type ohmic contact electrode structure;

And a heat sink support formed below the p-type electrode structure,

14. The method of claim 13,

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14. The method of claim 13,

The n-type ohmic contact electrode structure (full n -type ohmic contacting electrode system) is transparent ohmic contact having at least 70% transmittance in the wavelength band below and forming the entire area of the upper surface of the bottom nitride-based cladding layer and the ohmic contact interface 600nm Electrode and a reflective electrode pad formed on the upper surface of the transparent ohmic contact electrode and having a reflectance of 50% or more in a wavelength band of 600 nm or less.

A light emitting structure for a group III nitride-based light emitting diode device composed of a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer containing a buffer layer is successively grown Preparing a grown substrate wafer

Forming a p-type electrode structure including a current blocking structure and a reflective current spreading layer on the upper surface of the nitride based current injection layer which is the uppermost layer of the light emitting structure for the light emitting diode device;

Preparing a functional bonding wafer in which a sacrificial separation layer, a heat sink support, and a wafer bonding layer are sequentially stacked on a top surface of a supporting substrate;

Forming a composite of the growth substrate wafer and the functional bonded wafer in a wafer-to-wafer manner by wafer bonding;

Separating the growth substrate of the growth substrate wafer from the composite;

Forming a surface irregularity and an n-type ohmic contact electrode structure on the lower nitride-based clad layer of the composite from which the growth substrate has been removed;

And separating the supporting substrate of the functional bonding wafer from the composite substrate from which the growth substrate has been removed. The method of manufacturing a group III nitride-based semiconductor light-emitting diode device of a vertical structure, comprising:

26. The method of claim 25,

Wherein the current blocking structure is disposed opposite to the n-type ohmic contact electrode structure at a same position in the vertical direction as a predetermined shape and dimension, such that the current blocking structure faces the n-type ohmic contact electrode structure.

26. The method of claim 25,

Wherein the sacrificial separation layer of the functional bonded wafer is an oxide, a nitride, or a metal, which is advantageous for lift-off of a supporting substrate.

28. The method of claim 27,

When the sacrificial separation layer of the functional bonded wafer is irradiated with a photon-beam of a specific wavelength band having a strong energy and is separated, the sacrificial separation layer of ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN Wherein the first group III nitride-based semiconductor light-emitting diode device is formed of one selected from the group consisting of silicon nitride and silicon nitride.

28. The method of claim 27,

The method of manufacturing a Group III nitride-based semiconductor light-emitting diode device according to claim 1, wherein the Group III nitride-based semiconductor light-emitting diode device is formed of any one selected from the group consisting of Au, Ag, Pd, SiO 2 and SiN x when etched in a wet etching solution.

26. The method of claim 25,

The heat sink supports of the functional bonded wafers may be formed from a plurality of layers of electrically conductive material having a thickness of at least < RTI ID = 0.0 > 10 < / RTI > microns thick using electroplating, physical vapor deposition (PVD), chemical vapor deposition (CVD) A method of manufacturing a group III nitride-based semiconductor light-emitting diode device.

26. The method of claim 25,

Wherein the wafer bonding layer formed on the growth substrate and the upper layer of the support substrate is formed of an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 300 ° C or higher.

32. The method of claim 31,

Wherein the wafer bonding layer is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt and Cr.

26. The method of claim 25,

The process of separating the growth substrate and the support substrate may be performed by a chemical mechanical polishing (CMP) process, a chemical etching process using a wet etching solution, or a vertical process group 3 using a thermo-chemical decomposition reaction by irradiating a strong- Wherein the method comprises the steps of:

26. The method of claim 25,

In addition to the electrical and optical properties of the Group III nitride-based semiconductor light-emitting diode device, the annealing and surface treatment processes used for enhancing the mechanical bonding between the respective layers may be vertical A method of manufacturing a group III nitride-based semiconductor light-emitting diode device.

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