KR100479002B1 - Dual Panel Type Organic Electroluminescent Device and Method for Fabricating the same - Google Patents

Abstract

According to the dual panel type organic light emitting device and its manufacturing method according to the present invention, first, since the array device and the organic light emitting diode device is formed on a different substrate, it is possible to improve the production yield and production management efficiency, the product It can increase the lifespan, and secondly, it is easy to design thin film transistor and realize high opening ratio / high resolution because of the top emitting method. Third, by using electrical connection pattern with elastic structure, array device layer and organic light emitting diode device Because of the connection, the position restoring force is increased by the elastic force of the above-described electrical connection pattern, and even if the bonding force is applied, the connection characteristics between the array element and the organic light emitting diode element can be improved.

Description

Dual Panel Type Organic Electroluminescent Device and Method for Fabricating the same

The present invention relates to an organic electroluminescent device, and more particularly, to a dual panel type organic electroluminescent device and a manufacturing method thereof.

One of the new flat panel displays (FPDs), the organic light emitting display device is self-luminous and thus has a better viewing angle and contrast than the liquid crystal display device. Is also advantageous. In addition, since it is possible to drive DC low voltage, fast response speed, and all solid, it is strong against external shock, wide use temperature range, and especially inexpensive in terms of manufacturing cost.

In particular, unlike the liquid crystal display device or the plasma display panel (PDP), the deposition and encapsulation equipment are all in the manufacturing process of the organic light emitting device, and the process is very simple.

In the related art, a passive matrix having no separate switching device has been mainly used as a driving method of the organic light emitting device.

In the passive matrix method, since the scan lines and the signal lines are configured to form a device in a matrix form, the scan lines are sequentially driven over time in order to drive each pixel, and thus show the required average luminance. In order to make a payment, the instantaneous luminance must be produced as much as the average luminance multiplied by the number of lines.

However, in the active matrix method, a thin film transistor, which is a switching element for turning on / off a pixel, is positioned for each subpixel, and the first electrode connected to the thin film transistor is The second electrode, which is turned on / off in subpixel units and faces the first electrode, becomes a common electrode.

In the active matrix method, a voltage applied to a pixel is charged in a storage capacitor (C _ST ), so that power is applied until the next frame signal is applied, thereby relating to the number of scan lines. Run continuously for one screen without

Therefore, according to the active matrix method, since the same luminance is applied even when a low current is applied, it has the advantage of low power consumption, high definition, and large size.

Hereinafter, the basic structure and operation characteristics of the active matrix organic electroluminescent device will be described in detail with reference to the accompanying drawings.

1 is a view showing a basic pixel structure of a general active matrix organic electroluminescent device.

As shown, a scanning line is formed in a first direction, and a signal line and a power supply line are formed in a second direction crossing the first direction and spaced apart from each other by a predetermined distance. Define the subpixel area.

A switching TFT, which is an addressing element, is formed at the intersection of the scan line and the signal line, and is connected to the switching thin film transistor and the power supply line to form a storage capacitor C _ST . A driving thin film transistor, which is connected to the storage capacitor C _ST and a power supply line, is formed, and the driving thin film transistor is connected to the driving thin film transistor to form an organic electroluminescent diode.

When the organic light emitting diode is supplied with a current in the forward direction, the organic light emitting diode has a positive (N) junction between the anode electrode, which is a hole providing layer, and the cathode electrode, which is an electron providing layer. Electrons and holes recombine with each other as they move through the part, and thus have a smaller energy than when the electrons and holes are separated, thereby utilizing the principle of emitting light due to the energy difference generated.

2 is a schematic cross-sectional view of a conventional organic light emitting display device.

As shown in the drawing, the first and second substrates 10 and 50 are arranged to be spaced apart from each other by a subpixel unit, which is the minimum unit for implementing the screen, and the sub-pixel unit is disposed on the inner surface of the first substrate 10. An array element layer 30 including a plurality of formed thin film transistors T is formed, and the first electrode 32 is connected to the thin film transistor T on the array element layer 30 to form a subpixel unit. The organic light emitting layer 34 is formed on the first electrode 32 to emit red, green, and blue colors in subpixel units, and the second electrode 38 is formed on the entire upper surface of the organic light emitting layer 36. ) Is formed.

The organic light emitting layer 36 interposed between the first and second electrodes 32 and 38 and the first and second electrodes 32 and 38 forms an organic light emitting diode device (E).

In addition, the second substrate 50 is used as an encapsulation substrate, and a recess 52 is formed at an inner central portion of the second substrate 50, and moisture from the outside is formed in the recess 52. A moisture absorbent 54 for blocking absorption and protecting the organic light emitting diode element E is enclosed.

The edges of the first and second substrates 10 and 50 are encapsulated by the seal pattern 70.

3 is a flowchart illustrating a manufacturing process of a conventional organic light emitting display device.

st1 is a step of forming an array element on a first substrate, wherein the first substrate refers to a transparent substrate, a scan line on the first substrate, a signal line and a power supply line crossing the scan line and spaced apart from each other; And forming an array element including a switching thin film transistor formed at a point where the scan line and the signal line intersect, and a driving thin film transistor formed at the point where the scan line and the power supply line intersect.

st2 is a step of forming a first electrode which is a first component of the organic light emitting diode, and the first electrode is connected to the driving thin film transistor and patterned for each subpixel.

st3 is a step of forming an organic light emitting layer which is a second component of the organic light emitting diode on the first electrode, and when the first electrode is composed of an anode, the organic light emitting layer is a hole injection layer, a hole transport layer The light emitting layer, the electron transport layer may be laminated in order.

In st4, the second electrode, which is a third component of the organic light emitting diode, is formed on the organic light emitting layer, and the second electrode is formed on the entire surface of the substrate as a common electrode.

The organic electroluminescent diode is composed of first and second electrodes and an organic electroluminescent layer interposed between the first and second electrodes.

At st5, the first substrate is encapsulated using a second substrate, which is another substrate. In this step, the first substrate is protected from an external impact and the organic light emitting layer is exposed to the inflow of external air. Encapsulating the outer periphery of the first substrate to the second substrate to prevent damage, the inner surface of the second substrate includes a moisture absorbent.

As described above, the conventional bottom emission type organic light emitting diode device is manufactured by bonding an array device and a substrate on which an organic light emitting diode is formed and a separate substrate for encapsulation. In this case, since the product of the yield of the array device and the yield of the organic light emitting diode determines the yield of the organic light emitting diode, the overall organic process of the organic light emitting diode structure yields the overall process yield by the organic electroluminescent diode process. There was a problem that is greatly limited. For example, even if the array element is well formed, when the organic electroluminescent layer using the thin film of about 1000 mW is defective by foreign matter or other factors, the organic electroluminescent element is determined to be a poor grade. .

This results in a loss of overall costs and material costs that were required to manufacture the array device of good quality, there was a problem that the production yield is lowered.

In addition, the bottom emission method has a high degree of freedom and stability due to the encapsulation process, and has a problem in that it is difficult to be applied to a high resolution product due to the limitation of the aperture ratio, and the top emission method is easy to design a thin film transistor and improves the aperture ratio. It is advantageous in terms of product life, but in the conventional top emission type structure, since the material selection range is narrow as the cathode is normally positioned on the organic light emitting layer, the transmittance is limited and the light efficiency is reduced, and the light transmittance is minimized. In order to configure a thin film type protective film, there was a problem in that it does not sufficiently block outside air.

In order to solve the above problems, it is an object of the present invention to improve the yield and productivity, and to provide an organic light emitting device having a high resolution / high opening ratio structure and a manufacturing method thereof.

To this end, the present invention is to provide a dual panel type organic electroluminescent device for forming an array element and an organic light emitting diode device on a different substrate, and connecting the two devices through a separate electrical connection pattern.

It is still another object of the present invention to provide an electrical connection pattern having a structure having elasticity in order to improve electrical contact characteristics between an array element and an organic light emitting diode element in the aforementioned dual panel type organic light emitting diode element.

In order to achieve the above object, in the first aspect of the present invention, there is defined a subpixel area, which is a minimum unit for implementing a screen, and includes: first and second substrates disposed to face each other at a predetermined interval; An array element layer including a plurality of thin film transistors formed in subpixel units on an inner surface of the first substrate; A first electrode formed on an inner front surface of the second substrate; An organic light emitting layer formed under the first electrode; A second electrode formed in a subpixel unit below the organic light emitting layer; An electrical connection pattern including a first contact portion in contact with the second electrode and a first inclined portion bent downwardly with respect to the inner surface of the first substrate toward the thin film transistor from the first contact portion and in contact with the thin film transistor; ; The present invention provides a dual panel type organic light emitting display device including a seal pattern encapsulating edge portions of the first and second substrates.

The electrical connection pattern may further include a second contact portion bent at the first inclined portion at a portion in contact with the thin film transistor, wherein the first inclined portion of the electrical connection pattern is the first and second contact portions. And an acute angle or an obtuse angle with respect to the inner surface of the first substrate. The electrical connection pattern may further include a second inclined portion in contact with the first inclined portion on the thin film transistor and configured to be symmetrical with the first inclined portion, wherein the second inclined portion includes the thin film. A third contact portion which contacts the second electrode in the same form as the first contact portion is further configured at an end not in contact with the transistor, wherein the first inclined portion and the second inclined portion are respectively different from the first contact portion and the third contact portion. It is characterized by being connected at an acute or obtuse angle. At this time, the electrical connection pattern is characterized in that it further comprises a pattern of "b" shape or "┛" shape having a bent portion between the first contact portion and the first inclined portion or between the third contact portion and the second inclined portion. .

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The electrical connection pattern may further include a second inclined portion connected to the first contact portion on the thin film transistor and configured to be symmetrical with the first inclined portion, and the second inclined portion may include the thin film transistor or the second inclined portion. A third contact portion which contacts the second electrode in the same form as the first contact portion is further configured at an end not in contact with the contact portion, wherein the first inclined portion and the second inclined portion are mutually different from the first contact portion and the third contact portion, respectively. It is characterized by being connected at an acute or obtuse angle.

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The length of the second contact portion is longer than the length of the first contact portion.

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In addition, a protective layer having a contact hole exposing a portion of the thin film transistor is formed on an entire surface of the substrate covering the thin film transistor, and the electrical connection pattern is connected to and supported by the thin film transistor through the contact hole. A protective electrode having a pattern structure corresponding to the second electrode is further formed below the second electrode, and the electrical connection pattern is substantially in contact with the protective electrode.

Between the electrical connection pattern and the array element layer, a connection electrode that is substantially in contact with the thin film transistor is further included, the connection electrode and the electrical connection pattern is in contact, the electrical connection pattern structure has an elastic force, the elastic force By connecting the thin film transistor and the second electrode is characterized in that.

According to a second aspect of the present invention, there is provided a method, comprising: forming a plurality of thin film transistors in subpixel units on a substrate on which a subpixel region is defined; Sequentially forming first and second passivation layers on the entire surface of the substrate covering the thin film transistor, the first and second protective layers having contact holes exposing either electrode of the thin film transistor; Forming an electrical connection pattern connected to the thin film transistor through the contact hole on the second passivation layer and including an inclined portion bent upwardly with respect to the substrate; The present invention provides a method of manufacturing a dual panel type organic light emitting display device substrate, the method including removing a second protective layer covering a periphery of the electrical connection pattern.

The first protective layer is selected from an inorganic insulating material, the second protective layer is selected from an organic insulating material, and in the step of removing the second protective layer, by using a reaction gas containing oxygen (0 ₂ ) gas. And an ashing process.

The forming of the thin film transistor may include forming an inverted staggered type thin film transistor by sequentially forming a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, and a drain electrode on a substrate. The electrical connection pattern may be connected to the drain electrode, or by sequentially forming a semiconductor layer, a gate insulating film, a gate electrode, a source electrode, and a drain electrode on a substrate to form a top gate type thin film transistor. And the electrical connection pattern is connected to the drain electrode.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

Example 1

The present embodiment relates to a dual panel type organic electroluminescent device in which an array element and an organic light emitting diode element are formed on different substrates, and the two elements are connected by a columnar electrical connection pattern.

4 is a cross-sectional view of a dual panel organic light emitting display device according to the present invention.

As shown in the drawing, the first and second substrates 110 and 150 are disposed to face each other at a predetermined interval in subpixel units, which are the minimum units for implementing the screen.

An array element layer 140 including a plurality of thin film transistors T formed in units of subpixels is formed on the inner surfaces of the first substrates 110 and 150, and a thin film transistor is formed on the array element layer 140. A connection electrode 142 is formed in connection with T), and a columnar electrical connection pattern 144 is formed in contact with an upper portion of the connection electrode 142.

The connection electrode 142 and the electrical connection pattern 144 may be selected from a conductive material, and the electrical connection pattern 144 may be formed of a multilayer including an insulating material in order to have a thickness. 142 may be omitted, and the electrical connection pattern 144 may be directly connected to the thin film transistor T.

In addition, the thin film transistor T includes a semiconductor layer 112, a gate electrode 114, a source electrode 116, and a drain electrode 118, and the aforementioned connection electrode 142 is substantially a drain electrode 118. )

The first electrode 152 is formed on the entire inner surface of the second substrate 150, and the red, green, and blue light emitting layers 156a, 156b, and 156c are repeatedly arranged in subpixel units below the first electrode 152. ) Is formed, and the second electrode 162 is formed in the subpixel unit below the organic light emitting layer 160.

In more detail, the organic light emitting layer 160 may include a first carrier transfer layer 154 in contact with the bottom surface of the first electrode 152, and a lower portion of the red, green, and blue light emitting layers 156a, 156b, and 156c. And a second carrier transfer layer 158 in contact with the top surface of the second electrode 162.

For example, when the first electrode 152 corresponds to an anode and the second electrode 162 corresponds to a cathode, the first carrier transport layer 154 corresponds to the hole injection layer and the hole transport layer in order, and the second carrier The transport layer 158 corresponds to an electron transport layer and an electron injection layer in order.

The organic light emitting layer 160 interposed between the first and second electrodes 152 and 162 and the first and second electrodes 152 and 162 corresponds to the organic light emitting diode device E.

In the present invention, the top surface of the electrical connection pattern 144 is connected to the lower surface of the second electrode 162, the current supplied from the thin film transistor (T) is connected to the connection electrode 142 and the electrical connection pattern 144. It is characterized in that it is delivered to the second electrode 162 through.

The edges of the first and second substrates 110 and 150 are encapsulated by the seal pattern 170.

Although not shown in detail in the drawings, the organic light emitting display device according to the present invention includes at least one switching thin film transistor and at least one driving thin film transistor for supplying current to the organic light emitting diode device in subpixel units. The transistor corresponds to a driving thin film transistor.

However, in the above-described dual panel type organic light emitting display device, if the electrical connection is not properly made for each subpixel through an electrical connection pattern, problems such as point defects and luminance unevenness are caused. In addition, as the screen gets larger, there is a disadvantage in that electrical connection for each subpixel is not properly performed.

In order to compensate for this disadvantage, in another embodiment described later it is intended to use an electrical connection pattern of a structure having an elastic force.

Example 2

FIG. 5 is a cross-sectional view of a dual panel type organic light emitting display device according to a second embodiment of the present invention, and is illustrated based on an electrical connection pattern structure having an elastic structure, and a portion overlapping with FIG. 4 will be briefly described. .

As illustrated, the organic light emitting layer interposed between the first substrate 210 on which the array element layer 240 is formed, and the first and second electrodes 252 and 262 and the first and second electrodes 252 and 262 ( The second substrate 250 on which the organic light emitting diode device E formed of 260 is formed is spaced apart from each other by a predetermined distance, and the array element layer 240 and the first and second substrates 210 and 250 are spaced apart from each other. The organic light emitting diode device E is connected to each other, and an electrical connection pattern 244 having an elastic force is formed by an obliquely curved structure.

The electrical connection pattern 244 is formed in subpixel units.

Although not shown in detail in the drawings, the electrical connection pattern 244 includes first and second patterns spaced apart from each other at an upper portion spaced apart from the array element layer 240, and the first and second patterns and array elements. A third pattern of “V” shape connecting the layers 240 is formed, and one end of the second pattern further includes two bent portions I in a right angle direction.

In this case, one end of the second pattern may be disposed in a horizontal direction with the second electrode 262 to be in contact with the lower surface of the second electrode 262 described above.

As described above, according to the structure of the electrical connection pattern 244 formed of the first to third patterns, the position restoring force is enhanced by the elastic force, and the array element 240 and the organic electroluminescence are emitted through the electrical connection pattern 244 by the bonding pressure. The weakening of the connection force between the diode elements E can be effectively prevented.

Although not shown in the drawing, a section between the second electrode 262 and the electrical connection pattern 244 may further include a second electrode protection electrode having a pattern structure corresponding to the second electrode 262. In this case, the electrical connection pattern 244 is electrically connected to the second electrode 262 through the protective electrode, and the electrical connection pattern 244 is a thin film transistor T through the contact hole of the protective layer for the thin film transistor T. ) And support the structure of the electrical connection pattern 244 at the same time.

The dual panel type organic electroluminescent device is characterized in that it is implemented by a top emission method for emitting light emitted from the organic electroluminescent layer 260 toward the first electrode 252, which is the upper electrode, according to the conventional organic field Compared to the light emitting device, the light transmits light through a durable substrate instead of a separate transparent protective film, thereby increasing product reliability and forming an organic light emitting diode device on a separate substrate from the array device layer. Regardless of the structure, the aperture ratio can be increased.

In addition, although not shown in the drawings, the planar structure of the electrical connection pattern according to the present exemplary embodiment may be, for example, a structure in which a pattern of a panel form having a predetermined area is inclinedly bent.

6a to 6d are views showing various modifications to the elastic structure electrical connection pattern for the dual panel type organic electroluminescent device according to the present invention.

The elastic structure electrical connection pattern 344 of FIG. 6A is spaced apart from each other by centering on the first pattern 344a and the first pattern 344a at a predetermined distance above the first pattern 344a. The fourth and fifth patterns 344d, which are inclined patterns connecting the second and third patterns 344b and 344c, the first and second patterns 344a and 344b, and the first and third patterns 344a and 344c. 344e).

The first to fifth patterns 344a, 344b, 344c, 344d, and 344e form an integrated pattern, and are characterized in that they form an overall light narrowing structure.

In addition, the fourth and fifth patterns 344d and 344e are connected to inner portions of the second and third patterns 344b and 344c facing each other, and the overall structure is a pattern in which both ends of the “V” shaped pattern are bent outwardly. Has a structure.

In this case, the first pattern 344a corresponds to a role of stabilizing the pattern structure and a pattern in contact with the array element layer, and the second and third patterns 344b and 344c correspond to a pattern in contact with the organic light emitting diode device. do.

In the elastic structure electrical connection pattern 444 of FIG. 6B, a space between the first and second patterns 444a and 444b and the first and second patterns 444a and 444b disposed to be spaced apart from each other in the up and down directions by a predetermined distance. A third pattern 444c which is an inclined pattern connecting the first and second patterns 444a and 444b may be formed.

In particular, the length of the first pattern 444a constituting the lower pattern has a larger value than the length of the second pattern 444b constituting the upper pattern may stabilize the structure.

The elastic structure electrical connection pattern 544 according to FIG. 6C has a predetermined distance from the first pattern 544a and the first pattern 544a at a predetermined distance from the upper portion of the first pattern 544a. Fourth and fifth patterns 544d, which are inclined patterns connecting the spaced second and third patterns 544b and 544c, the first and second patterns 544a and 544b, and the first and third patterns 544a and 544c. , 544e).

The first to fifth patterns 544a, 544b, 544c, 544d, and 544e form an integral pattern, and form an overall light narrowing structure, and the fourth and fifth patterns 544d and 544e form the second and third patterns 544b. 544c) is connected to both ends, and the overall structure has a pattern structure bent inward to the "V" shape pattern.

The first pattern 544a stabilizes the structure of the electrical connection pattern 544 and corresponds to a pattern connected to the array element layer. The second and third patterns 544b and 544c are connected to the organic light emitting diode device. Corresponds to the pattern.

The elastic structure electrical connection pattern 644 of FIG. 6D includes first and second patterns 644a and 644b disposed at non-corresponding positions in parallel directions in a state where they are spaced apart from each other by a predetermined distance, and the first and second patterns 644a, The third pattern 644c is an inclined pattern connecting one end of the same direction of the 644b.

In particular, the length of the first pattern 644a has a larger value than the length of the second pattern 644b may stabilize the structure.

As such, in order to impart an elastic force to the electrical connection pattern according to the present invention, it is important to basically have an inclined bent structure, and the bent upper and lower patterns are configured to be connected to the array element and the organic light emitting diode element, respectively. It is preferable that the lower pattern length has a value greater than the upper pattern length to stabilize the structure, and the lower pattern has a stable structure through coupling with an array element layer (for example, fixing through a contact hole). It is important.

7A to 7C are cross-sectional views illustrating a manufacturing process of a substrate for a dual panel type organic light emitting display device according to an embodiment of the present invention. The manufacturing process of the elastic structure electrical connection pattern will be described. Although a top gate type thin film transistor is taken as an example, an inverted staggered type thin film transistor will be described as an example.

5 illustrates another thin film transistor structure as an example.

7A illustrates forming a thin film transistor T including a gate electrode 712, a semiconductor layer 714, a source electrode 716, and a drain electrode 718 on a substrate 710, and forming a thin film transistor T. ) Sequentially forming the first and second passivation layers 720 and 722 on the entire surface of the substrate, and partially exposing the above-described drain electrode 718 to the first and second passivation layers 720 and 722. A drain contact hole 724 is formed.

For example, the first protective layer 720 may be selected from an inorganic insulating material, and the second protective layer 722 may be selected from an organic insulating material.

In addition, a drain contact hole 724 may be preferentially formed in the first passivation layer 720, and then a contact hole corresponding to the drain contact hole 724 described above may be formed in the second passivation layer 722. have.

In FIG. 7B, an elastic structure electrical connection pattern 726 connected to the drain electrode 718 is formed through the drain contact hole 724.

The elastic structure electrical connection pattern 726 is connected to the drain electrode 718, the first pattern 726a having a “V” shape formed to be in contact with the sidewall of the drain contact hole 724, and the first pattern ( The second and third patterns 726b and 726c are formed outwardly at both ends of the 726a.

In FIG. 7C, the second protective layer 722 is removed to complete the electrical connection pattern 726.

For example, the second protective layer 722 may be removed by an ashing process using a reaction gas including an O ₂ gas.

That is, the second protective layer 722 is required to complete the electrical connection pattern 726 in a mold method.

However, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

For example, in the drawings according to the first and second embodiments, a structure in which two pixels consisting of red, green, and blue subpixels are arranged as an example for convenience of description is described, but the actual structure has a structure in which a plurality of pixels are configured.

As described above, according to the elastic structure dual panel type organic electroluminescent device and a method of manufacturing the same according to the present invention has the following effects.

First, since the array device and the organic light emitting diode device are formed on different substrates, production yield and production management efficiency can be improved, and product life can be increased.

Second, because of the top emission method, it is easy to design a thin film transistor and high aperture ratio / high resolution can be realized.

Third, since the array element layer and the organic light emitting diode element are connected by using an electrical connection pattern having an elastic structure, the position restoring force is increased by the elastic force of the above-described electrical connection pattern, and even when the bonding force is applied, the array element and the organic The connection characteristics between the electroluminescent diode devices can be improved.

1 is a view showing a basic pixel structure of a general active matrix organic electroluminescent device.

2 is a cross-sectional view of a conventional organic light emitting display device.

Figure 3 is a process flow diagram for the manufacturing process of the conventional organic electroluminescent device.

Figure 4 is a cross-sectional view of a dual panel organic electroluminescent device according to the present invention.

5 is a cross-sectional view of a dual panel type organic light emitting display device according to a second exemplary embodiment of the present invention.

6a to 6d are views showing various modifications to the elastic structure electrical connection pattern for the dual panel type organic electroluminescent device according to the present invention.

Figure 7a to 7c is a cross-sectional view showing a step of manufacturing a substrate for a dual panel organic electroluminescent device according to the present invention.

<Explanation of symbols for main parts of the drawings>

210: first substrate 240: array element layer

244: electrical connection pattern 250: second substrate

252: first electrode 260: organic light emitting layer

262: second electrode E: organic light emitting diode device

T: thin film transistor I: bent portion

Claims (21)

First and second substrates each having a subpixel area defined as a minimum unit for realizing a screen and disposed to face each other at a predetermined distance from each other; An array element layer including a plurality of thin film transistors formed in subpixel units on an inner surface of the first substrate; A first electrode formed on an inner front surface of the second substrate; An organic light emitting layer formed under the first electrode; A second electrode formed in a subpixel unit below the organic light emitting layer; An electrical connection pattern including a first contact portion contacting the second electrode and a first inclined portion bent downwardly from the first contact portion toward the thin film transistor with respect to the inner surface of the first substrate and contacting the thin film transistor; ; Seal patterns encapsulating edge portions of the first and second substrates Dual panel type organic light emitting device comprising a. The method of claim 1, The electrical connection pattern may further include a second contact portion bent at the first inclined portion in contact with the thin film transistor. The method of claim 2, And a first inclined portion of the electrical connection pattern forming an acute angle or an obtuse angle with respect to the first and second contact portions and an inner surface of the first substrate. The method of claim 1, And the electrical connection pattern further includes a second inclined portion contacting the first inclined portion on the thin film transistor and configured to be symmetrical with the first inclined portion. The method of claim 4, wherein And a second contact portion configured to contact the second electrode in the same shape as the first contact portion at an end of the second inclined portion not contacting the thin film transistor. The method of claim 5, wherein And the first inclined portion and the second inclined portion are formed at an acute angle or an obtuse angle with the first contact portion and the third contact portion, respectively. The method of claim 2, The electrical connection pattern may further include a second inclined portion connected to the first contact portion on the thin film transistor and configured to be symmetrical with the first inclined portion. The method of claim 7, wherein And a second contact portion configured to contact the second electrode in the same form as the first contact portion at an end of the second inclined portion not contacting the thin film transistor or the second contact portion. The method of claim 8, And the first inclined portion and the second inclined portion are formed at an acute angle or an obtuse angle with the first contact portion and the third contact portion, respectively. The method of claim 2, The length of the second contact portion is longer than the length of the first contact portion dual panel type organic light emitting device. The method of claim 1, On the front surface of the substrate covering the thin film transistor, a protective layer having a contact hole for partially exposing the thin film transistor is formed, the electrical connection pattern is connected to the thin film transistor through the contact hole and supported by the dual panel type organic Electroluminescent element. The method of claim 1, A protection panel having a pattern structure corresponding to the second electrode is further formed below the second electrode, and the electrical connection pattern is substantially in contact with the protection electrode. The method of claim 1, A dual panel type organic electroluminescent device further comprising a connection electrode substantially contacting the thin film transistor between the electrical connection pattern and the array element layer, wherein the connection electrode is in contact with the electrical connection pattern. The method of claim 1, The electrical connection pattern structure has an elastic force, the dual panel type organic light emitting device, characterized in that for connecting the thin film transistor and the second electrode by the elastic force. Forming a plurality of thin film transistors in subpixel units on a substrate on which the subpixel region is defined; Sequentially forming first and second passivation layers on the entire surface of the substrate covering the thin film transistor, the first and second protective layers having contact holes exposing either electrode of the thin film transistor; Forming an electrical connection pattern connected to the thin film transistor through the contact hole on the second passivation layer and including an inclined portion bent upwardly with respect to the substrate; Removing the second protective layer covering the periphery of the electrical connection pattern Method of manufacturing a substrate for a dual panel type organic electroluminescent device comprising a. The method of claim 15, The first protective layer is a method of manufacturing a substrate for a dual panel type organic electroluminescent device is selected from an inorganic insulating material. The method of claim 15, The second protective layer is a method of manufacturing a substrate for a dual panel organic electroluminescent device is selected from an organic insulating material. The method according to any one of claims 15 or 17, In the step of removing the second protective layer, a method of manufacturing a substrate for a dual panel type organic electroluminescent device comprising the step of ashing (ashing) using a reaction gas containing oxygen (0 ₂ ) gas. The method of claim 15, The forming of the thin film transistor may include forming an inverted staggered type thin film transistor by sequentially forming a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, and a drain electrode on a substrate. The electrical connection pattern is a manufacturing method of a substrate for a dual panel type organic electroluminescent device connected to the drain electrode. The method of claim 15, The forming of the thin film transistor may include forming a top gate type thin film transistor by sequentially forming a semiconductor layer, a gate insulating film, a gate electrode, a source electrode, and a drain electrode on a substrate. The electrical connection pattern is a manufacturing method of a substrate for a dual panel type organic electroluminescent device connected to the drain electrode. The method according to any one of claims 6 to 9, The electrical connection pattern may further include a dual panel type organic electric field having a “b” shape or “┛” shape pattern having a bent portion between the first contact portion and the first inclined portion or between the third contact portion and the second inclined portion. Light emitting element.