JP2001117509A - Organic el display device - Google Patents
Organic el display deviceInfo
- Publication number
- JP2001117509A JP2001117509A JP29184199A JP29184199A JP2001117509A JP 2001117509 A JP2001117509 A JP 2001117509A JP 29184199 A JP29184199 A JP 29184199A JP 29184199 A JP29184199 A JP 29184199A JP 2001117509 A JP2001117509 A JP 2001117509A
- Authority
- JP
- Japan
- Prior art keywords
- organic
- display device
- substrate
- active matrix
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000011159 matrix material Substances 0.000 claims abstract description 29
- 229910052738 indium Inorganic materials 0.000 claims abstract description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000003292 glue Substances 0.000 abstract description 3
- 230000003446 memory effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 21
- 239000010408 film Substances 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 101100411598 Mus musculus Rab9a gene Proteins 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
- H10K59/1275—Electrical connections of the two substrates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、フラットパネル
ディスプレイの１つである有機ＥＬディスプレイの構造
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of an organic EL display which is one of flat panel displays.
【０００２】[0002]
【従来の技術】有機ＥＬディスプレイを駆動する方法と
しては、単純マトリックス法とアクティブマトリックス
法がある。単純マトリックス法は、最も簡単な駆動方法
であり、ストライプ状に形成された下部電極と、それに
垂直にストライプ状に形成された上部電極とでＥＬ薄膜
を挟んだ構造をしている。それらストライプ状の電極の
電圧を順次切り替えて行くことでＥＬディスプレイを駆
動する方法である。2. Description of the Related Art As a method for driving an organic EL display, there are a simple matrix method and an active matrix method. The simple matrix method is the simplest driving method, and has a structure in which an EL thin film is sandwiched between a lower electrode formed in a stripe shape and an upper electrode formed in a stripe shape perpendicular to the lower electrode. This is a method of driving an EL display by sequentially switching the voltages of the stripe-shaped electrodes.
【０００３】別の駆動方法としてアクティブマトリック
ス法がある。これは、薄膜トランジスタ（Thin Flim Tr
ansistor，TFT ）などで構成された画素基板上にＥＬ素
子を形成している構造を持つ。ＴＦＴで構成された単位
画素構造に印加する電圧の駆動波形により、前記単純マ
トリックス構造では実現できないメモリ駆動を実現で
き、単一画素の発光時間を長くできる特徴を有する。As another driving method, there is an active matrix method. This is a thin film transistor (Thin Flim Tr)
An EL device is formed on a pixel substrate composed of an anistor (TFT) or the like. The drive waveform of the voltage applied to the unit pixel structure composed of TFTs enables memory drive that cannot be realized by the simple matrix structure, and has the characteristic that the light emission time of a single pixel can be lengthened.
【０００４】[0004]
【発明が解決しようとする課題】単純マトリックス法の
有機ＥＬディスプレイは、既に試作されていて、例えば
１９９８年に開かれたＥＬ国際会議（９th Int. Worksh
op on Inorganic and Organic Electroluminescence)で
パイオニア社のS.Miyaguchi らによって既に発表されて
いる (“Extended Abstrct of EL 98",(1998)137)。単
純マトリックス法の問題は、有機ＥＬ素子の発光の印加
電圧に対する応答速度が非常に早いため（通常１μ秒以
下）、単一画素に必要とされる輝度が著しく大きな値と
なる点にある。The organic EL display of a simple matrix method [0006] is, already have been the prototype, for example EL international conference was held in 1998 (9 th Int. Worksh
op on Inorganic and Organic Electroluminescence) by Pioneer S. Miyaguchi et al. (“Extended Abstrct of EL 98”, (1998) 137). The problem of the simple matrix method is that the luminance required for a single pixel is extremely large because the response speed of the organic EL element to the applied voltage of light emission is very fast (usually 1 μsec or less).
【０００５】例えば、有機ＥＬ素子を用いてＥＬディス
プレイを作製し、１００本のストライプ状電極を駆動し
たとすると、デューティ比は１／１００であり、ディス
プレイの輝度１００(cd/m2) を得るには、各単一画素を
構成する有機ＥＬ素子は瞬間的に１００００(cd/m2) の
輝度を必要とする。このＥＬディスプレイにおいて、各
単一画素が発光する時間は、図１（ａ）に示すように、
１／１００フレーム期間しかなく、発光の時間的な利用
率は著しく低くなる。For example, if an EL display is manufactured using an organic EL element and 100 stripe electrodes are driven, the duty ratio is 1/100, and a display luminance of 100 (cd / m 2 ) is obtained. In such a case, the organic EL element forming each single pixel needs a luminance of 10,000 (cd / m 2 ) instantaneously. In this EL display, the time during which each single pixel emits light is, as shown in FIG.
Since there is only a 1/100 frame period, the temporal utilization of light emission is extremely low.
【０００６】また、瞬間的に非常に高い輝度でＥＬ素子
を駆動しなければならないため、各単一画素を構成する
個々のＥＬ素子の劣化が進み、素子寿命は大幅に低下し
てしまう。さらにまた、有機ＥＬ素子は、高輝度で光ら
せる程、印加電圧が上昇してしまうとの問題がある。ま
たさらに、有機ＥＬ素子では輝度が１００(cd/m2) から
１００００(cd/m2) と１００倍も増える発光条件下で
は、発光効率は半減してしまうという問題もある。この
ように単純マトリックス法は、ＥＬ素子の寿命の低下と
印加電圧の上昇および発光効率の低下を招く。In addition, since the EL element must be driven at a very high luminance instantaneously, the individual EL elements constituting each single pixel deteriorate, and the life of the element is greatly reduced. Furthermore, the organic EL element has a problem in that the applied voltage increases as the pixel emits light with high luminance. Further, the organic EL device has a problem that the luminous efficiency is reduced by half under the luminous condition where the luminance increases 100 times from 100 (cd / m 2 ) to 10,000 (cd / m 2 ). As described above, the simple matrix method causes a decrease in the life of the EL element, an increase in applied voltage, and a decrease in luminous efficiency.
【０００７】他方、例えば１９９９年のＳＩＤ（The So
ciety for Information Display)国際会議にてセイコー
エプソン社のT.Shimoda らによって発表されているよう
に、ＴＦＴを各画素に搭載した有機ＥＬディスプレイも
既に試作されている（SID99 Digest, (1999) 372)。こ
の方法では搭載したＴＦＴによって、各画素がメモリ機
能を有し、このメモリ機能で各画素の発光時間を大幅に
増加させることができるので、これによりディスプレイ
の高輝度化を図ろうとするものである。On the other hand, for example, the SID (The So
(Ciety for Information Display) As presented by T. Shimoda of Seiko Epson at an international conference, an organic EL display with a TFT mounted on each pixel has already been prototyped (SID99 Digest, (1999) 372) . In this method, each pixel has a memory function due to the mounted TFT, and the light emission time of each pixel can be greatly increased by this memory function. Therefore, it is intended to increase the brightness of the display. .
【０００８】ところが、有機ＥＬ素子の発光層は有機材
料を用いているため、有機溶媒や水によって分解、劣化
しやすく、無機半導体材料で用いられているような、ウ
ェットプロセスを使ったリソグラフィ（微細加工技術）
がＥＬ素子の加工に使えない。また、ＥＬ素子の陽極と
陰極間は互いに平行になっていて凹凸があってはならな
い。また、ＴＦＴとＥＬ素子が並置される構造となるた
め、表示画面に対する発光領域の占める割合は小さくな
る。このため、ＥＬディスプレイの高精細化が制約され
るとともに開口率が大幅に低下する（１５％以下の開口
率）。However, since the light emitting layer of the organic EL element uses an organic material, it is easily decomposed and deteriorated by an organic solvent or water. Processing technology)
Cannot be used for EL element processing. The anode and the cathode of the EL element are parallel to each other and have no irregularities. In addition, since the TFT and the EL element are arranged side by side, the ratio of the light emitting area to the display screen is reduced. For this reason, high definition of the EL display is restricted, and the aperture ratio is significantly reduced (an aperture ratio of 15% or less).
【０００９】そのため、このＥＬディスプレイにおい
て、各単一画素は１フレーム期間連続的に発光すること
ができるものの、図１（ｂ）に示すように開口率を考慮
した単一画素あたりの発光強度は著しく低くなる。ま
た、光の取り出しをＥＬ素子側で行った場合には、仕事
関数の小さな金属材料を使った陰極電極を透明化しなけ
ればならないという困難が伴うため、発光の利用率はさ
らに低下する。このため、ＴＦＴを用いた有機ＥＬディ
スプレイの輝度は、単純マトリックス法の輝度に比べて
ほとんど改善されないばかりか、むしろ低下してしまう
傾向があった。Therefore, in this EL display, although each single pixel can emit light continuously for one frame period, the light emission intensity per single pixel in consideration of the aperture ratio as shown in FIG. Significantly lower. Further, when light is extracted on the EL element side, it is difficult to make the cathode electrode made of a metal material having a small work function transparent, which further lowers the light emission utilization rate. For this reason, the brightness of the organic EL display using the TFT tends to be hardly improved as compared with the brightness of the simple matrix method, but rather to be lowered.
【００１０】そこで本発明の目的は、前述の従来の問題
点を解決し、アクティブマトリックス駆動によるメモリ
効果を保持しつつ、発光素子の開口率向上による発光輝
度の改善のはかれる有機ＥＬ表示装置を提供せんとする
ものである。Accordingly, an object of the present invention is to provide an organic EL display device which solves the above-mentioned conventional problems and which can improve the light emission luminance by improving the aperture ratio of the light emitting element while maintaining the memory effect by active matrix driving. It is something you want to do.
【００１１】[0011]
【課題を解決するための手段】この目的を達成するた
め、本発明有機ＥＬ表示装置は、当該装置がＥＬ素子の
駆動を行うアクティブマトリックスの駆動基板と、ＥＬ
素子の発光を行うＥＬ素子基板とを貼り合わせた構造を
有することを特徴とするものである。In order to achieve this object, an organic EL display device according to the present invention comprises an active matrix driving substrate for driving the EL element, and an organic EL display device.
It has a structure in which an EL element substrate that emits light from an element is bonded.
【００１２】さらに本発明は、前記アクティブマトリッ
クスの駆動基板に薄膜トランジスタが使用されてもよ
く、またＭＯＳ電界効果型トランジスタが使用されても
よい。またさらに本発明は、前記貼り合わせ部分にイン
ジウムまたは金またはニッケルまたは銀またはハンダを
含む金属が用いられてもよく、同貼り合わせ部分に異方
性導電材料または光硬化性絶縁材料または導電性樹脂ボ
ールが用いられてもよく、前記ＥＬ素子の陰極金属材料
が前記貼り合わせのための金属材料として用いられても
よい。さらに、本発明装置は、前記アクティブマトリッ
クスの駆動基板および前記ＥＬ素子の基板に可塑性のあ
る基板が用いられてもよい。Further, in the present invention, a thin film transistor may be used as a driving substrate of the active matrix, and a MOS field effect transistor may be used. Still further, in the present invention, the bonding portion may be made of indium, gold, nickel, silver, or a metal containing solder, and the bonding portion may be made of an anisotropic conductive material, a photocurable insulating material, or a conductive resin. A ball may be used, and a cathode metal material of the EL element may be used as a metal material for the bonding. Further, in the device of the present invention, a flexible substrate may be used as the drive substrate of the active matrix and the substrate of the EL element.
【００１３】[0013]
【発明の実施の形態】本発明によれば、有機ＥＬ表示装
置を高輝度化する手段として、アクティブマトリックス
の駆動基板とＥＬ素子基板とを完全に分離して作製し、
両基板を貼り合わせることによって表示装置を構成して
いるので、ＥＬ表示装置の各単一画素が１フレーム期間
にわたり連続して発光することに加えて開口率が大きく
向上し、開口率を考慮した単一画素あたりの発光強度が
図１（ｃ）に示すように、従来のアクティブマトリック
ス法（図１（ｂ））に比し大幅に改善される。According to the present invention, as a means for increasing the luminance of an organic EL display device, an active matrix drive substrate and an EL element substrate are completely separated and manufactured.
Since the display device is formed by bonding the two substrates, each single pixel of the EL display device emits light continuously over one frame period, and the aperture ratio is greatly improved. As shown in FIG. 1C, the emission intensity per single pixel is greatly improved as compared with the conventional active matrix method (FIG. 1B).
【００１４】[0014]
【実施例】以下添付図面を参照し、実施例により本発明
の実施の形態を詳細に説明する。図２に本発明有機ＥＬ
表示装置の具体的実施例に係る一形態の構造断面図を示
す。第１ガラス基板１上にはアクティブマトリックス回
路を構成するＴＦＴが作製されている。図２において、
１は第１ガラス基板、２はモリブデン−タンタル合金ま
たはアルミのゲート電極、３は窒化シリコンの第１（ゲ
ート）絶縁膜、４はアモルファスシリコンの半導体層、
５はチタンまたはアルミのソース電極、６はチタンまた
はアルミのドレイン電極、７は窒化シリコンの第２絶縁
膜、８はソース電極５と電気的に導通され画素ごとに独
立して設けられたアルミの画素電極であり、９はアルミ
の遮光膜である。この画素電極８上には柱状構造のイン
ジウム柱１０を蒸着法とリフトオフ法またはメッキとリ
フトオフ法により形成する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. FIG. 2 shows the organic EL of the present invention.
1 shows a structural cross-sectional view of one embodiment according to a specific example of a display device. TFTs constituting an active matrix circuit are formed on the first glass substrate 1. In FIG.
1 is a first glass substrate, 2 is a gate electrode of molybdenum-tantalum alloy or aluminum, 3 is a first (gate) insulating film of silicon nitride, 4 is a semiconductor layer of amorphous silicon,
5 is a source electrode of titanium or aluminum, 6 is a drain electrode of titanium or aluminum, 7 is a second insulating film of silicon nitride, 8 is an aluminum electrode which is electrically connected to the source electrode 5 and provided independently for each pixel. Reference numeral 9 denotes a pixel electrode, and reference numeral 9 denotes an aluminum light-shielding film. On the pixel electrode 8, an indium column 10 having a columnar structure is formed by a vapor deposition method and a lift-off method or by plating and a lift-off method.
【００１５】一方、１１の第２ガラス基板上には１２の
透明電極（ＩＴＯ）膜を形成し、さらに１３の有機ＥＬ
発光層を作製し、更にその上に単位画素ごとに分離した
ＥＬ素子の陰極用金属電極１４をパターンニングする。
それら２枚のガラス基板について、画素電極８と、ＥＬ
素子の陰極用金属電極１４との位置合わせを行いなが
ら、インジウム柱１０を糊として使用しプレスすること
で貼り合わせる。On the other hand, 12 transparent electrode (ITO) films are formed on 11 second glass substrate, and 13
A light-emitting layer is formed, and a cathode metal electrode 14 of an EL element separated for each unit pixel is patterned thereon.
For these two glass substrates, the pixel electrode 8 and the EL
The indium pillars 10 are used as glue and pressed to perform bonding while aligning the elements with the cathode metal electrodes 14.
【００１６】従って、ＥＬ素子の発光は、ＴＦＴ側では
なく有機ＥＬ発光層側（図２の上部側）から取り出され
る。この時、陰極用金属電極１４の１つ１つはＥＬ表示
装置の単位画素に相当し、画素分離できる最小の間隔で
パターンニングすることにより有機ＥＬディスプレイの
開口率をほぼ１００％にまで高めることができる。Therefore, light emitted from the EL element is extracted not from the TFT side but from the organic EL light emitting layer side (upper side in FIG. 2). At this time, each of the cathode metal electrodes 14 corresponds to a unit pixel of the EL display device, and the aperture ratio of the organic EL display is increased to almost 100% by patterning at a minimum interval at which the pixels can be separated. Can be.
【００１７】図３は、本発明による別の形態の実施例で
あり、図２のアクティブマトリックス基板について、ガ
ラスに代えてシリコン基板を使った場合の断面構造図を
示す。FIG. 3 shows an embodiment of another embodiment according to the present invention. FIG. 3 is a sectional structural view of the active matrix substrate shown in FIG. 2 when a silicon substrate is used instead of glass.
【００１８】図３のシリコン基板上には、アクティブマ
トリックス回路を構成するＭＯＳＦＥＴ（Metal-Oxide-
Semiconductor Field-Effect Transistor, MOS電界効果
トランジスタ）が作製されている。ここで、図３におい
て１５はｐ型シリコン基板、１６，１７はこの半導体基
板１５上に形成されるＭＯＳＦＥＴのｎ+ ソース領域お
よびドレイン領域、１８はｐ+ 画素分離領域、１９はこ
の画素分離領域１８上に形成された酸化シリコンからな
るフィールド絶縁膜である。２０は酸化シリコンのゲー
ト絶縁膜、２１はポリシリコンのゲート電極、２２は酸
化シリコン第１絶縁膜、２３は第１絶縁膜２２に設けた
コンタクトホールを介してドレイン領域１７と電気的に
導通されたアルミの第１金属電極、２５は酸化シリコン
の第２絶縁膜２４に設けられたコンタクトホールを介し
てソース領域１６と電気的に導通され、画素ごとに独立
して設けられたアルミの第２金属電極である。２６はＰ
ＳＧ（りんけい酸ガラス）の第３絶縁膜、２７は第３絶
縁膜上に形成され第２金属電極２５と電気的に導通され
たアルミの画素金属電極である。On the silicon substrate shown in FIG. 3, MOSFETs (Metal-Oxide-
Semiconductor Field-Effect Transistor (MOS field effect transistor) has been manufactured. Here, in FIG. 3, 15 is a p-type silicon substrate, 16 and 17 are n + source and drain regions of a MOSFET formed on the semiconductor substrate 15, 18 is a p + pixel separation region, and 19 is this pixel separation region. This is a field insulating film made of silicon oxide formed on 18. 20 is a gate insulating film of silicon oxide, 21 is a gate electrode of polysilicon, 22 is a first insulating film of silicon oxide, and 23 is electrically connected to the drain region 17 through a contact hole provided in the first insulating film 22. The first aluminum electrode 25 is electrically connected to the source region 16 through a contact hole provided in the second insulating film 24 made of silicon oxide, and the second aluminum electrode 25 is provided independently for each pixel. It is a metal electrode. 26 is P
An SG (phosphosilicate glass) third insulating film 27 is an aluminum pixel metal electrode formed on the third insulating film and electrically connected to the second metal electrode 25.
【００１９】一方、２８のガラス基板上には２９の透明
電極（ＩＴＯ）膜を形成し、さらに３０の有機ＥＬ発光
層を作製し、更にその上に単位画素ごとに分離した３１
のＥＬ素子の陰極用金属電極をパターンニングする。そ
れら２枚の基板について、画素電極２７とＥＬ素子の陰
極用金属電極３０との位置合わせを行いながら、バイン
ダー材料３２に金属微粒子３３を分散させた異方性導電
材を糊として挟み込み、プレスすることで貼り合わせ
る。この場合にも、ＥＬ素子の発光はＭＯＳＦＥＴ側で
はなく有機ＥＬ発光層側（図３の上部側）から取り出さ
れる。この時、陰極用金属電極３１の１つ１つは、ＥＬ
ディスプレイの単位画素に相当し、画素分離できる最小
の間隔でパターンニングすることにより有機ＥＬ表示装
置の開口率を、ほぼ１００％にまで高めることができ
る。On the other hand, 29 transparent electrode (ITO) films are formed on a glass substrate 28, 30 organic EL light emitting layers are further formed, and further, a unit pixel 31 is formed thereon.
The metal electrode for a cathode of the EL element is patterned. While positioning the pixel electrode 27 and the metal electrode 30 for the cathode of the EL element on these two substrates, an anisotropic conductive material in which metal fine particles 33 are dispersed in a binder material 32 is sandwiched as glue and pressed. Stick together. Also in this case, light emitted from the EL element is extracted not from the MOSFET side but from the organic EL light emitting layer side (upper side in FIG. 3). At this time, each of the metal electrodes for cathode 31 is EL
The aperture ratio of the organic EL display device can be increased to almost 100% by patterning at a minimum interval that corresponds to a unit pixel of the display and can be separated from each other.
【００２０】以上は、アクティブマトリックスの駆動基
板として、ガラスやシリコン基板を用いた場合の実施例
について述べたが、可塑性のあるプラスチック基板を用
いた場合にも、本発明は適用できる。その場合には、プ
ラスチック基板上に、図２と同様にＴＦＴを形成し、ま
た、ＥＬ素子も別のプラスチック基板上に形成し、それ
ら２枚のプラスチック基板を金属バンプまたは、異方性
導電材によって接合することで可塑性のあるＥＬ表示装
置を作製できる。この時も、陰極用金属電極の１つ１つ
は、ＥＬ表示装置の単位画素に相当し、画素分離できる
最小の間隔でパターンニングすることにより有機ＥＬデ
ィスプレイの開口率を、ほぼ１００％にまで高めること
ができる。Although the embodiment in which a glass or silicon substrate is used as the driving substrate of the active matrix has been described above, the present invention can be applied to a case where a plastic substrate having flexibility is used. In this case, a TFT is formed on a plastic substrate in the same manner as in FIG. 2, and an EL element is also formed on another plastic substrate, and the two plastic substrates are connected to a metal bump or an anisotropic conductive material. Thus, a flexible EL display device can be manufactured. Also in this case, each of the metal electrodes for the cathode corresponds to a unit pixel of the EL display device, and the aperture ratio of the organic EL display is reduced to almost 100% by patterning at a minimum interval capable of separating pixels. Can be enhanced.
【００２１】また、前述の実施例では、基板の貼り合わ
せに金属バンプおよび異方性導電材を用いた場合につい
て示したが、その他にも、表面に導電膜を形成した樹脂
ボールや光硬化性絶縁樹脂材などを用いて、基板の貼り
合わせを行うことも可能である。In the above-described embodiment, the case where metal bumps and anisotropic conductive material are used for bonding substrates has been described. The substrates can be attached to each other using an insulating resin material or the like.
【００２２】また、金属バンプの材料については、イン
ジウムの他に、金またはニッケルまたは銀またはハンダ
などを含む金属も使用可能であり、特にＥＬ素子の陰極
金属材料をそのまま貼り合わせのためのバンプ材料とし
て用いることも可能である。As for the material of the metal bump, in addition to indium, a metal containing gold, nickel, silver, solder, or the like can be used. In particular, a bump material for bonding a cathode metal material of an EL element as it is can be used. It is also possible to use as.
【００２３】以上いくつかの具体的実施例について本願
発明の実施の形態を説明してきたが、本願発明はこれら
に限定されることなく、特許請求の範囲に規定された発
明の要旨内で各種の変形、変更の可能なことは自明であ
ろう。Although the embodiments of the present invention have been described with reference to some specific examples, the present invention is not limited to these embodiments, and various kinds of various embodiments may be included within the scope of the invention defined in the appended claims. It is obvious that modifications and changes are possible.
【００２４】[0024]
【発明の効果】本発明によれば、アクティブマトリック
ス駆動によるメモリ効果が発揮されるのに加えて、開口
率が１００％近くにまでなったため、図１（ｃ）に示し
たように開口率を考慮した単一画素あたりの発光の強度
は著しく向上し、単体のＥＬ素子の輝度とほぼ同等の輝
度を表示装置全体の輝度として得ることができる。According to the present invention, not only the memory effect by the active matrix driving is exerted, but also the aperture ratio becomes close to 100%, so that the aperture ratio is reduced as shown in FIG. The light emission intensity per single pixel taken into consideration is remarkably improved, and luminance substantially equal to the luminance of a single EL element can be obtained as the luminance of the entire display device.
【００２５】また、各画素のＥＬ素子の印加電圧の上昇
を招くことがなく、発光効率の低下も抑制される。ま
た、各画素のＥＬ素子の発光は１フレームの期間中、常
に表示装置の輝度と同程度に維持され、デューティ比は
ほぼ１となり、連続発光の状態が維持できるため、高印
加電圧、高輝度の瞬時発光を使うことがなく、素子寿命
の低下が大幅に抑制される。Further, a rise in the voltage applied to the EL element of each pixel does not occur, and a decrease in luminous efficiency is suppressed. In addition, the light emission of the EL element of each pixel is always maintained at about the same level as the luminance of the display device during one frame period, the duty ratio becomes almost 1, and the state of continuous light emission can be maintained. The instantaneous light emission is not used, and the reduction in element life is greatly suppressed.
【００２６】さらにまた、ＥＬ素子作製において、ＥＬ
素子基板上にＴＦＴなどの駆動部分が形成されないた
め、ＥＬ膜の作製がＴＦＴの凹凸による影響を受けない
こと、および有機ＥＬ材料を分解してしまう有機溶媒に
よるウエットプロセスをＥＬ素子作製に使う必要が全く
なく、ＴＦＴとＥＬ素子が並置される構造となっていな
いため微細加工が容易となり、高精細の表示装置の作製
が可能となる。また、有機ＥＬ素子全体が、貼り合わせ
を行うことでアクティブマトリックス基板に完全に覆わ
れてしまうため、直接大気に曝されることもなくなり、
従来、有機ＥＬ素子に不可欠であった封止の作業が不必
要、もしくは簡略化される。Further, in manufacturing an EL element, the EL
Since a driving part such as a TFT is not formed on the element substrate, the EL film is not affected by the unevenness of the TFT, and a wet process using an organic solvent that decomposes the organic EL material must be used for the EL element production. Since there is no structure and the TFT and the EL element are not juxtaposed, fine processing becomes easy, and a high-definition display device can be manufactured. In addition, since the entire organic EL element is completely covered with the active matrix substrate by bonding, it is not directly exposed to the atmosphere,
Conventionally, the sealing operation, which is indispensable for the organic EL element, is unnecessary or simplified.
【図１】 駆動方法を異にする有機ＥＬ表示装置におけ
る、開口率を考慮した単一画素あたりの発光の強度比較
で、（ａ）は単純マトリックス駆動法による場合、
（ｂ）は従来のアクティブマトリックス駆動法による場
合、（ｃ）は本発明のアクティブマトリックス駆動法に
よる場合の発光輝度をそれぞれ示す。FIG. 1 is a comparison of light emission intensity per single pixel in consideration of an aperture ratio in an organic EL display device using different driving methods.
(B) shows the light emission luminance in the case of the conventional active matrix driving method, and (c) shows the light emission luminance in the case of the active matrix driving method of the present invention.
【図２】 ＴＦＴを使ったアクティブマトリックス駆動
基板とＥＬ素子基板とを貼り合わせた場合の本発明によ
るＥＬ表示装置の構造断面図を示す。FIG. 2 is a structural sectional view of an EL display device according to the present invention when an active matrix drive substrate using a TFT and an EL element substrate are bonded to each other.
【図３】 ＭＯＳＦＥＴを使ったアクティブマトリック
ス駆動基板とＥＬ素子基板とを貼り合わせた場合の本発
明によるＥＬ表示装置の構造断面図を示す。FIG. 3 is a structural sectional view of an EL display device according to the present invention when an active matrix drive substrate using a MOSFET and an EL element substrate are bonded to each other.
１，１１，２８ ガラス基板 ２，２１ ゲート電極 ３，２０ ゲート絶縁膜 ４ 半導体層 ５ ソース電極 ６ ドレイン電極 ７，２２，２４，２６ 絶縁膜 ８，２７ 画素電極 ９ 遮光膜 １０ インジウム柱 １２，２９ 透明電極 １３，３０ 有機ＥＬ発光層 １４，３１ 陰極用金属電極 １５ 半導体基板 １６ ソース領域 １７ ドレイン領域 １８ 画素分離領域 １９ フィールド絶縁膜 ２３，２５ 金属電極 ３２ バインダ材料 ３３ 金属微粒子 1,11,28 Glass substrate 2,21 Gate electrode 3,20 Gate insulating film 4 Semiconductor layer 5 Source electrode 6 Drain electrode 7,22,24,26 Insulating film 8,27 Pixel electrode 9 Light shielding film 10 Indium pillar 12,29 Transparent electrode 13,30 Organic EL light-emitting layer 14,31 Metal electrode for cathode 15 Semiconductor substrate 16 Source region 17 Drain region 18 Pixel separation region 19 Field insulating film 23,25 Metal electrode 32 Binder material 33 Metal fine particles
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０５Ｂ 33/14 Ｈ０１Ｌ 29/78 ６１２Ｚ 33/26 (72)発明者 井上 陽司 東京都世田谷区砧１丁目10番11号 日本放 送協会 放送技術研究所内 (72)発明者 田中 功 東京都世田谷区砧１丁目10番11号 日本放 送協会 放送技術研究所内 (72)発明者 岡本 信治 東京都世田谷区砧１丁目10番11号 日本放 送協会 放送技術研究所内 Ｆターム(参考） 3K007 AB02 BA07 CA01 DA02 EB05 5C094 AA07 AA37 BA29 CA19 EB01 FB01 5F110 AA30 BB01 CC07 DD02 DD05 EE03 EE06 EE09 FF02 FF03 GG02 GG15 HK03 HK04 HL03 NN01 NN02 NN23 NN24 NN25 NN47 NN62 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H05B 33/14 H01L 29/78 612Z 33/26 (72) Inventor Yoji Inoue 1-10 Kinuta, Setagaya-ku, Tokyo No. 11 Japan Broadcasting Corporation Broadcasting Research Institute (72) Inventor Isao Tanaka 1-10-11 Kinuta, Setagaya-ku, Tokyo Japan Broadcasting Corporation Broadcasting Research Institute (72) Inventor Shinji Okamoto 1 Kinuta, Setagaya-ku Tokyo 10-10-11 Japan Broadcasting Corporation Broadcasting Research Institute F term (reference) 3K007 AB02 BA07 CA01 DA02 EB05 5C094 AA07 AA37 BA29 CA19 EB01 FB01 5F110 AA30 BB01 CC07 DD02 DD05 EE03 EE06 EE09 FF02 FF03 GG03 NN03 NN24 NN25 NN47 NN62
Claims (7)
て、当該装置がＥＬ素子の駆動を行うアクティブマトリ
ックスの駆動基板と、ＥＬ素子の発光を行うＥＬ素子基
板とを貼り合わせた構造を有することを特徴とする有機
ＥＬ表示装置。In a display device using an organic EL material, the display device has a structure in which an active matrix driving substrate for driving an EL element and an EL element substrate for emitting light from the EL element are bonded to each other. Characteristic organic EL display device.
ティブマトリックスの駆動基板に薄膜トランジスタが用
いられることを特徴とする有機ＥＬ表示装置。2. The organic EL display device according to claim 1, wherein a thin film transistor is used for a driving substrate of the active matrix.
ティブマトリックスの駆動基板にＭＯＳ電界効果型トラ
ンジスタが用いられることを特徴とする有機ＥＬ表示装
置。3. The organic EL display device according to claim 1, wherein a MOS field effect transistor is used as a drive substrate of said active matrix.
いて、前記貼り合わせ部分にインジウムまたは金または
ニッケルまたは銀またはハンダを含む金属が用いられる
ことを特徴とする有機ＥＬ表示装置。4. The organic EL display device according to claim 1, wherein the bonding portion is made of indium, gold, nickel, silver, or a metal containing solder.
いて、前記貼り合わせ部分に異方性導電材料または光硬
化性絶縁材料または導電性樹脂ボールが用いられること
を特徴とする有機ＥＬ表示装置。5. The organic EL display device according to claim 1, wherein an anisotropic conductive material, a photocurable insulating material, or a conductive resin ball is used for the bonded portion. .
いて、ＥＬ素子の陰極金属材料が前記貼り合わせのため
の金属材料として用いられることを特徴とする有機ＥＬ
表示装置。6. The organic EL device according to claim 1, wherein a cathode metal material of the EL element is used as a metal material for the bonding.
Display device.
前記アクティブマトリックスの駆動基板およびＥＬ素子
基板に可塑性のある基板が用いられることを特徴とする
有機ＥＬ表示装置。7. The device according to claim 1, wherein
An organic EL display device, wherein a flexible substrate is used for the active matrix drive substrate and the EL element substrate.
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|---|---|---|---|
| JP29184199A JP2001117509A (en) | 1999-10-14 | 1999-10-14 | Organic el display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29184199A JP2001117509A (en) | 1999-10-14 | 1999-10-14 | Organic el display device |
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| Publication Number | Publication Date |
|---|---|
| JP2001117509A true JP2001117509A (en) | 2001-04-27 |
Family
ID=17774123
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|---|---|---|---|
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-
1999
- 1999-10-14 JP JP29184199A patent/JP2001117509A/en active Pending
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