JPS6444043A - Formation of multilayer interconnection structure - Google Patents

Formation of multilayer interconnection structure

Info

Publication number
JPS6444043A
JPS6444043A JP20109387A JP20109387A JPS6444043A JP S6444043 A JPS6444043 A JP S6444043A JP 20109387 A JP20109387 A JP 20109387A JP 20109387 A JP20109387 A JP 20109387A JP S6444043 A JPS6444043 A JP S6444043A
Authority
JP
Japan
Prior art keywords
etching
layer
flattened
interconnection structure
interconnection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20109387A
Other languages
Japanese (ja)
Inventor
Kenji Akimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20109387A priority Critical patent/JPS6444043A/en
Publication of JPS6444043A publication Critical patent/JPS6444043A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a flattened multilayer interconnection structure by removing by etching second and third films under a condition that the second and the third films are equal in etching ratio. CONSTITUTION:In order to remove by etching back an interconnection material on an interlayer film 120 of a first interconnection material 103, it is coated with polystyrene as an etch-back sacrifice film 104. Then, a flattened wiring structure is obtained by etching back under the conditions of equal etching ratios of polystyrene of the film 104 and polysilicon of the material 103 by a dry etching method with SF6 and O2 as reaction gases. Then, a step of forming interconnections of second layer is executed, it is etched back similarly to the case of the first layer to obtain a flattened 2-layer interconnection structure.
JP20109387A 1987-08-11 1987-08-11 Formation of multilayer interconnection structure Pending JPS6444043A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20109387A JPS6444043A (en) 1987-08-11 1987-08-11 Formation of multilayer interconnection structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20109387A JPS6444043A (en) 1987-08-11 1987-08-11 Formation of multilayer interconnection structure

Publications (1)

Publication Number Publication Date
JPS6444043A true JPS6444043A (en) 1989-02-16

Family

ID=16435281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20109387A Pending JPS6444043A (en) 1987-08-11 1987-08-11 Formation of multilayer interconnection structure

Country Status (1)

Country Link
JP (1) JPS6444043A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007520059A (en) * 2003-12-22 2007-07-19 ラム リサーチ コーポレーション Substrate processing method, plasma chamber and semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007520059A (en) * 2003-12-22 2007-07-19 ラム リサーチ コーポレーション Substrate processing method, plasma chamber and semiconductor device

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