JPS57123594A - Readout control circuit for semiconductor nonvolatile memory - Google Patents

Readout control circuit for semiconductor nonvolatile memory

Info

Publication number
JPS57123594A
JPS57123594A JP771781A JP771781A JPS57123594A JP S57123594 A JPS57123594 A JP S57123594A JP 771781 A JP771781 A JP 771781A JP 771781 A JP771781 A JP 771781A JP S57123594 A JPS57123594 A JP S57123594A
Authority
JP
Japan
Prior art keywords
nonvolatile memory
readout voltage
holding time
nonvolatile
storage holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP771781A
Other languages
Japanese (ja)
Other versions
JPS6142351B2 (en
Inventor
Masao Furuta
Yoshihiro Izumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP771781A priority Critical patent/JPS57123594A/en
Publication of JPS57123594A publication Critical patent/JPS57123594A/en
Publication of JPS6142351B2 publication Critical patent/JPS6142351B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To achieve the best setting of a readout voltage for storage holding time, by controlling the readout voltage of a nonvolatile memory by an inverter circuit consisting of a nonvolatile memory which has nearly the same characteristics with said memory. CONSTITUTION:A load resistance having a little bit less resistance value than the load resistance 4 of a nonvolatile MNOS transistor (TR) 9 for data storage is connected and when the readout voltage of a nonvolatile MNOSTR8 having a little bit lower readable range than the TR9 and nearly the same characteristics with the TR9 is small and the TR is turned off, an MOSTR11 forming an inverter together with the TR9 and an MOSTR10 is turned off. consequently, a capacitor 13 for integration is charged up to a prescribed voltage, and then the TRs 8 and 9 turns on through a circuit block 14 for control, thereby discharging the capacitor 13. Therefore, the readout voltage of the TR9 is set automatically to the best desired value for storage holding time, and the storage holding time of the nonvolatile memory is improved substantially.
JP771781A 1981-01-20 1981-01-20 Readout control circuit for semiconductor nonvolatile memory Granted JPS57123594A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP771781A JPS57123594A (en) 1981-01-20 1981-01-20 Readout control circuit for semiconductor nonvolatile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP771781A JPS57123594A (en) 1981-01-20 1981-01-20 Readout control circuit for semiconductor nonvolatile memory

Publications (2)

Publication Number Publication Date
JPS57123594A true JPS57123594A (en) 1982-08-02
JPS6142351B2 JPS6142351B2 (en) 1986-09-20

Family

ID=11673481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP771781A Granted JPS57123594A (en) 1981-01-20 1981-01-20 Readout control circuit for semiconductor nonvolatile memory

Country Status (1)

Country Link
JP (1) JPS57123594A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936393A (en) * 1982-08-20 1984-02-28 Mitsubishi Electric Corp Nonvolatile semiconductor memory device
JPS60133750A (en) * 1983-12-21 1985-07-16 Matsushita Electronics Corp Memory device
FR2600809A1 (en) * 1986-06-24 1987-12-31 Eurotechnique Sa DEVICE FOR DETECTING THE OPERATION OF THE READING SYSTEM OF A MEMORY-CELL EPROM OR EEPROM
JPH04192196A (en) * 1990-11-26 1992-07-10 Mitsubishi Electric Corp Nonvolatile semiconductor memory device
JP2011238346A (en) * 2011-06-16 2011-11-24 Sandisk Il Ltd Method for restoration from error in flash memory

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104141U (en) * 1986-12-25 1988-07-06

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936393A (en) * 1982-08-20 1984-02-28 Mitsubishi Electric Corp Nonvolatile semiconductor memory device
JPS60133750A (en) * 1983-12-21 1985-07-16 Matsushita Electronics Corp Memory device
FR2600809A1 (en) * 1986-06-24 1987-12-31 Eurotechnique Sa DEVICE FOR DETECTING THE OPERATION OF THE READING SYSTEM OF A MEMORY-CELL EPROM OR EEPROM
US4908799A (en) * 1986-06-24 1990-03-13 Thomson Composants Militaires Et Spatiaux Device to detect the functioning of the read system of an EPROM or EEPROM memory cell
JPH04192196A (en) * 1990-11-26 1992-07-10 Mitsubishi Electric Corp Nonvolatile semiconductor memory device
JP2011238346A (en) * 2011-06-16 2011-11-24 Sandisk Il Ltd Method for restoration from error in flash memory

Also Published As

Publication number Publication date
JPS6142351B2 (en) 1986-09-20

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