JPS56126942A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56126942A
JPS56126942A JP3030780A JP3030780A JPS56126942A JP S56126942 A JPS56126942 A JP S56126942A JP 3030780 A JP3030780 A JP 3030780A JP 3030780 A JP3030780 A JP 3030780A JP S56126942 A JPS56126942 A JP S56126942A
Authority
JP
Japan
Prior art keywords
thick
layer
poly
thin
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3030780A
Other languages
Japanese (ja)
Inventor
Hiroshi Nozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3030780A priority Critical patent/JPS56126942A/en
Priority to DE8181101328T priority patent/DE3176909D1/en
Priority to EP19810101328 priority patent/EP0035690B1/en
Priority to US06/240,300 priority patent/US4441941A/en
Publication of JPS56126942A publication Critical patent/JPS56126942A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a device with a high reliability preventing disconnection by stacking a conductive poly Si layer having a thick and thin section and an SiO2 layer having a thin and thick section corresponding to the thick and thin arrangement thereof an SiO2 on an Si substrate while an activated region is provided on the substrate surface excluding the section immediately beneath the conductive poly Si thin film. CONSTITUTION:An SiO22 of 1,000Angstrom , a P-added poly Si3 and an Si3N4 mask are stacked on an N type Si substrate 1 and an ion is injected thereinto to make a channel stopper. The layer 3 is selectively oxidzed so as to leave an isolating oxide thick film 6 and a layer 33 about 0.6mum therebeneath. The mask 4 is removed and the layers 3 and 2 are selectively etched to make a window. When a gate oxide film about 1,000Angstrom thick is made, it provides an oxide film 7. Thereafter, according to an accepted practice, the assembly is provided with a poly Si gate 8, a source 9, a drain 10 and an offset gate 11 and covered with an SiO212 on which electrodes 14-16 are mounted. This facilitates the mounting of the electrodes on the poly Si layer while smoothing the surface thereof thereby preventing disconnection and increasing the reliability.
JP3030780A 1980-03-06 1980-03-12 Semiconductor device Pending JPS56126942A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP3030780A JPS56126942A (en) 1980-03-12 1980-03-12 Semiconductor device
DE8181101328T DE3176909D1 (en) 1980-03-06 1981-02-24 Semiconductor device using component insulation and method of manufacturing the same
EP19810101328 EP0035690B1 (en) 1980-03-06 1981-02-24 Semiconductor device using component insulation and method of manufacturing the same
US06/240,300 US4441941A (en) 1980-03-06 1981-03-04 Method for manufacturing a semiconductor device employing element isolation using insulating materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3030780A JPS56126942A (en) 1980-03-12 1980-03-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56126942A true JPS56126942A (en) 1981-10-05

Family

ID=12300107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3030780A Pending JPS56126942A (en) 1980-03-06 1980-03-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56126942A (en)

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