JPS5552240A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5552240A
JPS5552240A JP12557178A JP12557178A JPS5552240A JP S5552240 A JPS5552240 A JP S5552240A JP 12557178 A JP12557178 A JP 12557178A JP 12557178 A JP12557178 A JP 12557178A JP S5552240 A JPS5552240 A JP S5552240A
Authority
JP
Japan
Prior art keywords
area
wiring
input
type
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12557178A
Other languages
Japanese (ja)
Other versions
JPS6128218B2 (en
Inventor
Susumu Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12557178A priority Critical patent/JPS5552240A/en
Publication of JPS5552240A publication Critical patent/JPS5552240A/en
Publication of JPS6128218B2 publication Critical patent/JPS6128218B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To provide a semiconductor IC device having excellent input clamping characteristics by forming an npn transistor in a tunnel wiring island region that constitutes part of the input wiring system.
CONSTITUTION: An n-type layer 3 is formed in a p-type semiconductor substrate 1 to constitute an island with an isolation layer 4. p-Type impurities are diffused in all areas but an area 31 to form a furth area 5 of the p-type. Further, n-type impurities are diffused in a high concentration to form a third area 61 and area 62. Thereupon an input terminal pad 100 and an input circuit wiring 92 are formed to be connected to the area 61, while the area 62 is connected to a VCC wiring 94 and the substrate 1 to a GND wiring 93, the input wiring intersecting wirings 95 and 96. Thus an npn transistor is formed with the island of layer 3 working as collector, the fourth area 5 as base, and the third area 61 as emitter, so that clamping may take place on the input circuit wiring 92 without being affeted by parasitic resistance.
COPYRIGHT: (C)1980,JPO&Japio
JP12557178A 1978-10-11 1978-10-11 Semiconductor integrated circuit device Granted JPS5552240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12557178A JPS5552240A (en) 1978-10-11 1978-10-11 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12557178A JPS5552240A (en) 1978-10-11 1978-10-11 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5552240A true JPS5552240A (en) 1980-04-16
JPS6128218B2 JPS6128218B2 (en) 1986-06-28

Family

ID=14913474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12557178A Granted JPS5552240A (en) 1978-10-11 1978-10-11 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5552240A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143565A (en) * 1982-02-19 1983-08-26 Matsushita Electronics Corp Semiconductor circuit wiring body
JPS61240668A (en) * 1985-04-17 1986-10-25 Sanyo Electric Co Ltd Semiconductor integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143565A (en) * 1982-02-19 1983-08-26 Matsushita Electronics Corp Semiconductor circuit wiring body
JPH0542814B2 (en) * 1982-02-19 1993-06-29 Matsushita Electronics Corp
JPS61240668A (en) * 1985-04-17 1986-10-25 Sanyo Electric Co Ltd Semiconductor integrated circuit
JPH0523066B2 (en) * 1985-04-17 1993-03-31 Sanyo Electric Co

Also Published As

Publication number Publication date
JPS6128218B2 (en) 1986-06-28

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