JPS5466792A - Surface acoustic wave element - Google Patents

Surface acoustic wave element

Info

Publication number
JPS5466792A
JPS5466792A JP13306977A JP13306977A JPS5466792A JP S5466792 A JPS5466792 A JP S5466792A JP 13306977 A JP13306977 A JP 13306977A JP 13306977 A JP13306977 A JP 13306977A JP S5466792 A JPS5466792 A JP S5466792A
Authority
JP
Japan
Prior art keywords
surface acoustic
acoustic wave
substrate
temperature coefficient
wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13306977A
Other languages
Japanese (ja)
Inventor
Masao Mashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13306977A priority Critical patent/JPS5466792A/en
Publication of JPS5466792A publication Critical patent/JPS5466792A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02834Means for compensation or elimination of undesirable effects of temperature influence
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02574Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02614Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
    • H03H9/02622Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves of the surface, including back surface

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To obtain the element greater in coupling coefficient and of zero temperature coefficient, by providing the temperature coefficient of opposite polarity of the propagation time of surface acoustic wave on the substrate provided on the crystal substrate, the piezoelectric film less than the wave length of surface accoustic wave in thickness and the means generating the surface accoustic waves. CONSTITUTION:The crystal substrate 5 and the piezoelectric film, e.g, ZnO film 6, in which the temperature coefficient of the propagation time for the surface acoustic wave for the substrate 5 placed on the substrate is of opposite polarity and the thickness is less than the wave length of the surface acoustic waves, for example, 0.19lambda, and the means generating the surface acoustic wave, comb type electrode on the film 6, are provided, achieving greater coupling coefficient and zero temperature coefficient.
JP13306977A 1977-11-08 1977-11-08 Surface acoustic wave element Pending JPS5466792A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13306977A JPS5466792A (en) 1977-11-08 1977-11-08 Surface acoustic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13306977A JPS5466792A (en) 1977-11-08 1977-11-08 Surface acoustic wave element

Publications (1)

Publication Number Publication Date
JPS5466792A true JPS5466792A (en) 1979-05-29

Family

ID=15096103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13306977A Pending JPS5466792A (en) 1977-11-08 1977-11-08 Surface acoustic wave element

Country Status (1)

Country Link
JP (1) JPS5466792A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6972508B2 (en) 2000-04-28 2005-12-06 Murata Manufacturing Co., Ltd. Surface acoustic wave device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6972508B2 (en) 2000-04-28 2005-12-06 Murata Manufacturing Co., Ltd. Surface acoustic wave device

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