JPH11243209A - Transfer method of thin-film device, the thin-film device, thin-film integrated circuit device, active matrix substrate, liquid crystal display device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide simple manufacturing process and a low-cost thin-film device, while laminating order at manufacturing of a thin-film device is maintained, by allowing transfer of the thin-film device to a substrate at actual use. SOLUTION: With a first separation layer such as amorphous silicon provided on a substrate which allows transmission of laser light, a thin-film device 140 such as TFT(thin-film-transistor) is formed on the substrate. A second separation layer 160 is formed on the thin-film device 140, over which a primary transfer body 180 is formed. By removing the substrate with a weakened bonding strength of the first separation layer under light irradiation, the thin-film device is primary-transferred to a primary-transfer body. Furthermore a secondary transfer body 200 is jointed to the underside surface of an exposed thin-film device via a bonding layer 190, and a second separation layer is fused with heat for weakened bonding strength, to have the primary-transfer body removed. Thus, the thin-film device is secondary-transferred to the secondary-transfer body.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for transferring a thin film device, a thin film device, a thin film integrated circuit device, an active matrix substrate, a liquid crystal display device, and electronic equipment.

[0002]

2. Description of the Related Art For example, when manufacturing a liquid crystal display using a thin film transistor (TFT), a process of forming a thin film transistor on a substrate by CVD or the like is performed. Since the process of forming a thin film transistor on a substrate involves high-temperature treatment, the substrate needs to be made of a material having excellent heat resistance, that is, a material having a high softening point and a high melting point. Therefore, at present, quartz glass is used as a substrate that can withstand a temperature of about 1000 ° C., and heat-resistant glass is used as a substrate that can withstand a temperature of about 500 ° C.

As described above, the substrate on which the thin-film devices are mounted must satisfy the conditions for manufacturing the thin-film devices. That is, the substrate to be used is determined so as to always satisfy the manufacturing conditions of the mounted device.

However, focusing only on the stage after a substrate on which a thin film device such as a TFT is mounted, the above-mentioned “substrate” may not always be preferable.

For example, as described above, when a manufacturing process involving a high-temperature treatment is performed, a quartz substrate, a heat-resistant glass substrate, or the like is used. However, these are very expensive, and therefore increase the product price.

[0006] Further, the glass substrate is heavy and easily broken. Liquid crystal displays used in portable electronic devices such as palmtop computers and mobile phones are as inexpensive, light and resistant to slight deformation as possible.
It is desirable that it is hard to break when dropped, but in reality,
Glass substrates are usually heavy, vulnerable to deformation, and can be broken by falling.

[0007] That is, there is a groove between the constraint caused by the manufacturing conditions and the preferable characteristics required for the product, and it has been extremely difficult to satisfy both conditions and characteristics.

Therefore, the present inventors formed a transfer layer including a thin film device on a substrate by a conventional process,
A technique has been proposed in which the transfer-receiving layer including the thin-film device is separated from the substrate and is transferred to a transfer body (Japanese Patent Application No. Hei.
No.-225643). For this purpose, a separation layer is formed between the substrate and the thin film device that is the layer to be transferred. By irradiating this separation layer with light, the inside and / or the interface of the separation layer is peeled off, and the bonding force between the substrate and the transferred layer is weakened, so that the transferred layer can be separated from the substrate. And As a result, the transferred layer is transferred to the transfer body. Here, when a thin film device is formed through a manufacturing process involving high-temperature treatment, a quartz substrate, a heat-resistant glass substrate, or the like is used. However, since the transfer body is not exposed to such a high-temperature treatment, there is an advantage that restrictions required for the transfer body are greatly eased.

[0009]

Here, a process in the case where the thin film device includes a thin film transistor (TFT) will be described. A TFT has a thin-film stacked structure including a plurality of thin films including at least a silicon semiconductor layer having an insulating layer, a conductive layer, a source, a drain, and a channel region. The cost of the TFT greatly depends on the manufacturing cost of the thin film laminated structure.

The formation of the insulating layer in the thin film laminated structure is generally carried out by NPCVD (Normal Pressure Chemical Vapor Deposition).
r Deposition) has low uniformity of film thickness, so LP
(LowPressure) CVD and PE (Plasma Enhanced) CV
D is used. A conductive layer represented by a metal layer is formed by sputtering. A silicon film for forming a silicon semiconductor layer is also formed by PECVD or LPCVD. Further, a method of introducing impurities into the silicon film by an ion implantation method or an ion doping method has been used. Alternatively, a method has been adopted in which a high-concentration impurity region serving as a source / drain region is formed of an impurity-doped silicon film by a CVD apparatus.

A CVD apparatus used for the various film formations described above,
Each of the sputtering apparatuses and the like is a vacuum processing apparatus that performs processing under a vacuum, and requires large-scale vacuum evacuation equipment, thereby increasing initial investment costs. Further, in the vacuum processing apparatus, processing such as film formation is performed by transporting the substrate in the order of evacuation, substrate heating, film formation, and venting. For this reason, it is necessary to replace the substrate atmosphere with air-vacuum, and there is a limit to the throughput.

Further, an ion implantation apparatus and an ion doping apparatus are basically vacuum processing apparatuses and have the same problems as described above. In addition, this ion implantation device and ion doping device generate plasma, extract ions,
Extremely complicated mechanisms such as ion mass spectrometry (in the case of an ion implanter), ion acceleration, ion focusing, and ion scanning are required, and the initial investment is considerably expensive.

As described above, the thin film forming technology and the processing technology for manufacturing the thin film laminated structure are basically the same as the LSI manufacturing technology. Therefore, the main means for reducing the cost of the TFT substrate is to increase the size of the substrate on which the TFT is formed, to improve the efficiency of thin film formation and its processing steps, and to improve the yield.

However, increasing the size of a substrate for the purpose of reducing costs and manufacturing a large-sized liquid crystal display device not only hinders high-speed transport of a substrate in a vacuum processing apparatus, but also increases the heat generated during the film forming process. There is a problem that the substrate is easily broken by stress, and it is extremely difficult to improve the throughput of the film forming apparatus. In addition, an increase in the size of the substrate imposes an increase in the size of the film forming apparatus. As a result, due to an increase in the price of a film forming apparatus due to an increase in the volume evacuated,
This leads to a further increase in initial investment, which ultimately makes it difficult to significantly reduce costs.

[0015] Although improving the yield of TFTs is an effective means of cost reduction, the yield close to the limit has already been achieved, and it is numerically difficult to significantly improve the yield.

In addition, a photolithography process is performed for patterning various layers. This photolithography step requires a resist film coating step, an exposure step, and a development step. Further, an etching step and a resist removing step are required thereafter, and the patterning step is a factor that increases the number of steps of the thin film forming method. This also causes an increase in the manufacturing cost of the thin film device.

In the resist coating step in the photolithography step, less than 1% of the resist liquid dropped on the substrate remains as a resist film after spin coating. There is a problem that efficiency has deteriorated.

A printing method has been proposed as a low-cost alternative to a large-sized exposure apparatus used in the exposure step, but it has not been put into practical use due to problems such as processing accuracy.

As described above, the current liquid crystal display device is required to have a significant price reduction from the market, but it is difficult to significantly reduce the cost of the TFT substrate.

The present invention makes it possible to independently and freely select a substrate to be used in the manufacture of a thin-film device and a substrate to be used, for example, in the actual use of a product (a substrate having favorable properties in view of the use of the product). It is possible to reduce the initial investment cost and running cost and increase the throughput, thereby significantly reducing the manufacturing cost by forming the thin film formed during the manufacturing without using a vacuum processing apparatus. And a thin film device, an active matrix substrate, a liquid crystal display device, and an electronic apparatus manufactured using the method.

Another object of the present invention is to transfer a thin-film device to a substrate used in actual use, while maintaining the lamination relationship of the thin-film device with respect to a substrate used during manufacture, while reducing manufacturing costs. It is to provide a new technology that can be used.

[0022]

According to the present invention, there is provided a method for transferring a thin film device, comprising: a first step of forming a separation layer on a substrate; and a transfer layer including a thin film device comprising a plurality of thin films on the separation layer. A second step of forming a substrate, a third step of bonding a transfer body on the transferred layer, and removing the substrate from the transferred layer at the boundary of the separation layer to transfer the transferred layer to the transfer layer. Transferring to a body, and solidifying the plurality of thin films constituting the thin film device and at least one thin film of the separation layer after a liquid containing a component of the thin film is applied. It is characterized by being formed using a liquid phase process.

A method for transferring a thin film device according to another aspect of the present invention includes a first step of forming a first separation layer on a substrate;
A second step of forming a transfer layer including a thin film device including a plurality of thin films on the first separation layer, a third step of forming a second separation layer on the transfer layer, and the second separation layer A fourth step of bonding the primary transfer member thereon, a fifth step of removing the substrate from the transfer target layer at the boundary of the first separation layer, and a secondary transfer member below the transfer target layer And a seventh step of removing the primary transfer body from the transferred layer and transferring the transferred layer to the secondary transfer body with the second separation layer as a boundary, A liquid phase process in which the plurality of thin films constituting the thin film device and at least one thin film of the first and second separation layers are solidified after a liquid containing a component of the thin film is applied. It is characterized by being formed using.

In the former invention, the laminating order of the thin film device on the substrate at the time of manufacturing is opposite to the laminating order of the thin film device on the transfer body at the time of completion, whereas in the latter invention, the transfer is performed twice. The stacking order at the time of completion is the same as that at the time of completion.

In both inventions, at least one of the thin film device and the separation layer (or the first and second separation layers) is formed as a coating film regardless of the vacuum processing apparatus.

According to the present invention, the insulating layer or the conductive layer itself constituting the separation layer or the thin film device is formed by a coating film, and at the same time, the thin film can be flattened. Since this coating film can be formed without using a vacuum processing apparatus such as a CVD apparatus or a sputtering apparatus, a mass production line can be constructed with a very small investment compared with the conventional method, the throughput of the manufacturing apparatus can be increased, and the thin film can be formed. The cost of the device can be significantly reduced.

As the thin film device, various structures such as a device including a semiconductor layer, a device including a thin film transistor, and a device including a base insulating layer and an upper protective insulating layer are applicable.

At this time, it is preferable that all the insulating layers included in the thin-film device are coated. However, the gate insulating layer whose film quality is strict in terms of securing the characteristics of the thin film transistor may be formed by a method other than the coating film.

In particular, in order to reduce the device cost, which is the object of the present invention, it is desirable that two or more thin films included in the thin film device are formed by a coating film.

The insulating layer can be formed of a SiO ₂ coating film obtained by applying a liquid containing a polymer having an Si—N bond (polysilazane) and performing a first heat treatment in an oxygen atmosphere. . Polysilazane represented by the above composition has high crack resistance, oxygen plasma resistance, and can be used as an insulating layer having a certain thickness even in a single layer.

This insulating layer is preferably subjected to a second heat treatment at a higher temperature than the first heat treatment after the first heat treatment, and the interface thereof is more cleaned than after the first heat treatment. . This second heat treatment can be performed at high temperature for a short time by laser annealing or lamp annealing.

The semiconductor layer is formed by applying a liquid containing silicon particles and performing a first heat treatment on a silicon coating film containing impurities.

After the first heat treatment, the semiconductor layer
It is preferable that the second heat treatment is performed at a higher temperature than that of the first heat treatment, and that the crystallinity of the second heat treatment is higher than that after the first heat treatment. This second heat treatment can also be performed at a high temperature for a short time by laser annealing or lamp annealing.

The semiconductor layer can be formed by coating using an organic semiconductor film.

As a method of diffusing impurities into the silicon coating film, a step of coating and forming an impurity-containing layer on the silicon coating film, and heating the impurity-containing layer to diffuse the impurities into the silicon coating film. And a step.

Conventionally, a method in which a high-concentration impurity region serving as a source / drain region is formed of an impurity-doped silicon film by a CVD apparatus, or a method in which an impurity is introduced by an ion implantation method or an ion doping method has been used. In the present invention, a thin film containing impurities is formed by applying and baking a liquid, and the thin film is subjected to high-temperature and short-time heat treatment such as lamp annealing or laser annealing to form a high-concentration impurity region. Form an area. Ion implantation equipment and ion doping equipment are basically vacuum equipment, and at the same time, are extremely useful for plasma generation, ion extraction, ion mass analysis (in the case of ion implantation equipment), ion acceleration, ion focusing, and ion scanning. A complicated mechanism is required, and the difference in the price of the device is obvious compared to a device that performs a heat treatment by applying a thin film containing impurities.

There are two methods for forming the conductive layer, one of which is a method of forming a metal thin film, and the other is a method of forming a transparent conductive thin film.

In order to form a metal thin film as a conductive layer, after a liquid containing conductive particles is applied, the liquid component is evaporated by a first heat treatment, whereby a conductive coating film can be formed.

This conductive layer is also preferably subjected to a second heat treatment at a higher temperature than the first heat treatment after the first heat treatment, and to have a lower resistance than after the first heat treatment. This second heat treatment can also be performed at a high temperature for a short time by laser annealing or lamp annealing.

As a method for forming a transparent conductive thin film as a conductive layer, a first heat treatment step in which the coated surface is heat-treated in an oxygen atmosphere or a non-reducing atmosphere, and a second heat treatment step in which the coated surface is heat-treated in a hydrogen atmosphere or a reducing atmosphere. And two heat treatment steps.

When a transparent electrode is formed as a conductive layer, an organic acid containing, for example, indium and tin is used as a coating solution. In this case, the above-described first and second heat treatments are preferably performed after the solvent used for viscosity control after the application is evaporated (for example, at a temperature of about 100 ° C.). Indium oxide and tin oxide are formed in the first heat treatment, and the reduction treatment is performed in a hydrogen atmosphere or a reducing atmosphere in the second heat treatment.

Here, the heat treatment temperature in the second heat treatment step is preferably set lower than the heat treatment temperature in the first heat treatment step. This can prevent the transparent conductive coating film having undergone the first heat treatment step from being thermally degraded in the second heat treatment step.

After the second heat treatment step, the temperature of the substrate
It is preferable to keep the atmosphere in a non-oxidizing atmosphere until the temperature becomes 00 ° C. or lower. In this case, the transparent conductive coating film that has been subjected to the reduction treatment in the second heat treatment step is prevented from being reoxidized in the air, so that the sheet resistance value of the transparent conductive coating film does not increase. In order to reliably prevent re-oxidation, the substrate temperature at the time of removal to the atmosphere is preferably set to 100 ° C. or lower. In particular, coating I
This is because the specific resistance of the TO film becomes lower as the number of oxygen vacancies in the film increases, and thus the specific resistance increases when re-oxidation occurs in the transparent conductive coating film due to oxygen in the atmosphere.

To form the transparent conductive coating film, a coating solution containing indium (In) and tin (Sn) is applied on the substrate. This coating film is oxidized by the first heat treatment to become an ITO film. If this coated ITO film is used,
The conductive layer can also be used as a transparent electrode.

When metal plating is applied to the surface of the applied ITO film, it can be used as a conductive layer other than the transparent electrode, and the contact resistance can be reduced by metal plating.

In order to reduce the contact resistance, it is preferable to further provide a conductive sputtered film formed by sputtering on the contact surface of the coated ITO.

As a thin film device, an active matrix substrate in which a thin film transistor is used as a pixel switching element can be used. In this case, it is preferable that the pixel electrode be formed of a conductive coating film. The surface on which the pixel electrode is formed usually has a step, but when the pixel electrode is formed with the conductive coating film, the surface of the conductive coating film becomes almost flat. For this reason, rubbing is favorably performed, and generation of a reverse chilled domain can be prevented.

The conductive coating film used for the pixel electrode is preferably a coated ITO film. The coated ITO serves as a transparent electrode and is suitable for manufacturing an active matrix substrate of a transmission type liquid crystal display device.

Further, the present invention can be applied to a liquid crystal display device using the active matrix substrate or an electronic apparatus including a transferred thin film device.

[0050]

Next, embodiments of the present invention will be described with reference to the drawings.

(First Embodiment) FIGS. 1 to 9 are views for explaining a first embodiment (transfer method of a thin film device) of the present invention. Note that the first embodiment relates to a method of transferring a layer to be transferred composed of a thin film device layer twice and transferring it to a transfer body, but it is also possible to transfer the layer to the transfer body once. In addition, among the film forming methods for each film, the liquid phase process will be described later separately for each type of film.

[Step 1] As shown in FIG. 1, a first separation layer (light absorbing layer) 120 is formed on a substrate 100. In the case of the transfer once, the first separation layer 120 functions as the only separation layer.

Hereinafter, the substrate 100 and the first separation layer 120 will be described.
Will be described.

Description of the Substrate 100 It is preferable that the substrate 100 has a light-transmitting property through which light can pass.

In this case, the light transmittance is preferably 10% or more, more preferably 50% or more. If this transmittance is too low, the attenuation (loss) of light increases, and a larger amount of light is required to peel off the first separation layer 120.

The substrate 100 is preferably made of a highly reliable material. When all the films constituting the transfer layer 140 formed on the substrate 100 are implemented by a liquid phase process, heat resistance is not required.

However, it is preferable that the substrate 100 be made of a material having a strain point equal to or higher than Tmax when the maximum temperature at the time of forming the transfer layer 140 is Tmax. When a part of the transfer layer 140 is formed by a relatively high-temperature process other than the liquid layer process, the constituent material of the substrate 100 is as follows.
Those having a strain point of 350 ° C. or higher are preferable, and those having a strain point of 500 ° C. or higher are more preferable. Examples of such a material include heat-resistant glass such as quartz glass, Corning 7059, and NEC Glass OA-2.

Although the thickness of the substrate 100 is not particularly limited, it is usually preferably about 0.1 to 5.0 mm, and more preferably about 0.5 to 1.5 mm.
If the thickness of the substrate 100 is too small, the strength is reduced. If the thickness is too large, light is easily attenuated when the transmittance of the substrate 100 is low. When the light transmittance of the substrate 100 is high, the thickness may exceed the upper limit. In order to uniformly irradiate light, the substrate 10
Preferably, the thickness of 0 is uniform.

Description of First Separation Layer 120 The first separation layer 120 is formed by any of a physical action (light, heat, etc.), a chemical action (chemical reaction with a chemical solution, etc.) or a mechanical action (tensile force, vibration). Under the influence of one or an evil number, the bonding force is reduced or extinguished.
00 is promoted.

The first separation layer 120 has, for example, a property that absorbs irradiated light and causes separation in the layer and / or interface (hereinafter referred to as “in-layer separation” or “interface separation”). Preferably, the irradiation of light causes the bonding force between atoms or molecules of the substance constituting the first separation layer 120 to disappear or decrease, that is, ablation occurs to cause peeling and / or in-layer peeling. Alternatively, a material that leads to interfacial separation is preferred.

Further, the first separation layer 12 is irradiated with light.
In some cases, gas is released from zero, and the separation effect is exhibited. That is, when the component contained in the first separation layer 120 is released as a gas, and when the first separation layer 120 absorbs light and instantaneously turns into a gas, the vapor is released and contributes to separation. There are cases. Such a first separation layer 12
Examples of the composition of 0 include those described in the following AE.

A. Amorphous silicon (a-Si) This amorphous silicon may contain hydrogen (H). In this case, the content of H is preferably about 2 atomic% or more, and more preferably about 2 to 20 atomic%. As described above, when a predetermined amount of hydrogen (H) is contained, hydrogen is released by light irradiation, and an internal pressure is generated in the first separation layer 120, which serves as a force for separating upper and lower thin films. Hydrogen (H) in amorphous silicon
Is the film formation conditions, for example, the gas composition in CVD, the gas pressure, the gas atmosphere, the gas flow rate, the temperature, the substrate temperature,
It can be adjusted by appropriately setting conditions such as the input power.

B. Various oxide ceramics, such as silicon oxide or silicate compound, titanium oxide or titanate compound, zirconium oxide or zirconate compound, lanthanum oxide or lanthanum oxide compound, conductive material (ferroelectric material) or semiconductor. , SiO ₂ , and Si ₃ O _2. Examples of the silicate compound include K ₂ SiO ₃ and L
i ₂ SiO ₃ , CaSiO ₃ , ZrSiO ₄ , Na ₂ SiO ₃
Is mentioned.

As the titanium oxide, TiO, Ti ₂ O ₃ ,
Ti0 _2, and examples of titanate compounds, for _{example, BaTi0 4, BaTiO 3, Ba} 2 Ti 9 O 20, Ba
_{Ti 5 O 11, CaTiO 3,} SrTiO 3, PbTiO 3,
MgTiO ₃ , ZrTiO ₂ , SnTiO ₄ , Al ₂ TiO
₅ , FeTiO ₃ .

Examples of zirconium oxide include ZrO ₂ , and examples of zirconate compounds include BaZrO 2
₃ , ZrSiO ₄ , PbZrO ₃ , MgZrO ₃ , K ₂ Zr
O ₃ is mentioned.

C. PZT, PLZT, PLLZT, PB
C. Ceramics such as ZT or dielectric (ferroelectric) B. Nitride ceramics such as silicon nitride, aluminum nitride, titanium nitride, etc. Organic polymer material As the organic polymer material, -CH-, -CO- (ketone), -CONH- (amide), -NH- (imide),
-COO- (ester), -N = N- (azo), -CH
= N- (shif) or the like (these bonds are broken by irradiation of light), in particular, any material having many of these bonds may be used. Further, the organic polymer material may have an aromatic hydrocarbon (one or more benzene rings or a condensed ring thereof) in the structural formula.

Specific examples of such organic polymer materials include polyolefins such as polyethylene and polypropylene, polyimides, polyamides, polyesters, polymethyl methacrylate (PMMA), polyphenylene sulfide (PPS), and polyether sulfone (PE).
S), epoxy resin and the like.

F. Metal As the metal, for example, Al, Li, Ti, Mn, I
n, Sn, Y, La, Ce, Nd, Pr, Gd, Sm or an alloy containing at least one of these.

The thickness of the first separation layer 120 varies depending on the purpose of separation, the composition of the first separation layer 120, the layer structure, the forming method, and other conditions, but is usually about 1 nm to 20 μm. Preferably, it is about 10 nm to 2 μm, more preferably about 40 nm to 1 μm. If the film thickness of the first separation layer 120 is too small, the uniformity of the film formation is impaired, and uneven peeling may occur.
On the other hand, if the film thickness is too large, it is necessary to increase the light power (light amount) in order to ensure good releasability of the first separation layer 120, and when removing the first separation layer 120 later. , That takes time. The first separation layer 1
The thickness of the film 20 is preferably as uniform as possible.

The method for forming the first separation layer 120 is not particularly limited, and is appropriately selected according to various conditions such as a film composition and a film thickness. For example, CVD (MOCVD, low pressure CVD, EC
R-CVD), vapor deposition, molecular beam deposition (MB), sputtering, ion plating, various vapor deposition methods such as PVD, electroplating, immersion plating (dipping),
Various plating methods such as electroless plating, Langmuir-Projet (LB) method, coating methods such as spin coating, spray coating and roll coating, various printing methods, transfer methods, ink jet methods, powder jet methods, and the like. Can be formed by combining two or more of the above. In addition,
The liquid phase process will be described later.

For example, when the composition of the first separation layer 120 is amorphous silicon (a-Si), it can be formed by CVD, especially low pressure CVD or plasma CVD.

[Step 2] Next, as shown in FIG. 2, a layer to be transferred (thin film device layer) 140 is formed on the first separation layer 120.

The K portion of this thin film device layer 140 (FIG. 2)
2 is shown on the right side of FIG. 2). As illustrated, the thin-film device layer 140 includes, for example, a SiO ₂ film (intermediate layer) 142.
The TFT includes a TFT (thin film transistor) formed thereon. The TFT includes a source / drain layer 146 formed by introducing an n-type impurity into a polysilicon layer, a channel layer 144, a gate insulating film 148, , Gate electrode 1
50, an interlayer insulating film 154, and an electrode 152 made of, for example, aluminum.

In this embodiment, the SiO ₂ film is used as the intermediate layer provided in contact with the first separation layer 120, but another insulating film such as Si ₃ N ₄ may be used. The thickness of the SiO ₂ film (intermediate layer) is appropriately determined depending on the purpose of its formation and the degree of the function that can be exhibited, but is usually preferably about 10 nm to 5 μm, more preferably 40 nm to 5 μm.
More preferably, it is about 1 μm. The intermediate layer is formed for various purposes, for example, a protective layer for physically or chemically protecting the transferred layer 140, an insulating layer, a conductive layer, a laser light shielding layer, a barrier layer for preventing migration, and a reflective layer. That exhibit at least one of the functions described above.

In some cases, the transfer layer (thin film device layer) 140 may be formed directly on the first separation layer 120 without forming an intermediate layer such as a SiO ₂ film.

The transfer layer 140 (thin film device layer) is a layer including a thin film device such as a TFT as shown on the right side of FIG.

As the thin film device, in addition to the TFT, for example, a thin film diode, a photoelectric conversion element (photo sensor, solar cell) formed of a PIN junction of silicon, a silicon resistance element, other thin film semiconductor devices, and electrodes (for example, IT
O, transparent electrodes such as mesa films), actuators such as switching elements, memories, and piezoelectric elements, micromirrors (piezoelectric thin film ceramics), magnetic recording thin film heads, coils, inductors, thin film highly permeable materials, and micros combining these There are magnetic devices, filters, reflection films, dichroic mirrors, and the like. The present invention is not limited to the above examples, and can be applied to various thin film devices that do not depart from the gist of the present invention.

Such a thin film device is usually formed through a relatively high process temperature in relation to a method of forming the thin film device. Therefore, in this case, as described above, the substrate 100 needs to have a high reliability that can withstand the process temperature.

[Step 3] Next, as shown in FIG. 3, on the thin film device layer 140, for example, a hot-melt adhesive layer 160 is formed as a second separation layer. Note that the second separation layer can be formed of an ablation layer as in the case of the first separation layer. In the case of the transfer once, the second separation layer is unnecessary.

As the hot-melt adhesive layer 160, there is an electron wax such as a proof wax (trade name), for example, which is less likely to contaminate impurities (sodium, potassium, etc.) into the thin film device.

The heat-meltable adhesive layer 160 of this kind can be formed by a coating method as a liquid phase process, for example, a spin coating method.

For the second separation layer, a water-soluble adhesive can be used. As this kind of water-soluble adhesive, for example, Chemiseal U-451D (trade name) manufactured by Chemtech Co., Ltd., and ThreeBond 3046 manufactured by ThreeBond Co., Ltd.
(Product name).

As described above, since the second separation layer 160 does not exist when the thin film device layer 140 is formed, the material is less restricted than the material of the first separation layer 120 and does not require heat resistance.

[Step 4] Further, as shown in FIG.
The primary transfer member 180 is adhered on the separation layer, for example, the hot-melt adhesive layer 160. Since the primary transfer body 180 is bonded after the production of the thin film device layer 140, there is no restriction on the process temperature or the like at the time of production of the thin film device layer 140, and it is sufficient that the primary transfer body 180 retains its shape at normal temperature.
In this embodiment mode, a relatively inexpensive material having shape retention properties, such as a glass substrate and a synthetic resin, is used. The primary transfer member 180 includes a secondary transfer member 200 described in detail later.
The same material can be used. In the case of the transfer once, this primary transfer body functions as a final transfer body. In this case, the final transfer body 180 and the transfer receiving layer 140 are bonded via, for example, an appropriate bonding layer.

[Step 5] Next, as shown in FIG.
The light is irradiated from the back side of 00.

This light is transmitted to the first
Irradiation is performed on the separation layer 120. Thereby, the first separation layer 1
In 20, intra-layer peeling and / or interfacial peeling occurs, and the bonding force decreases or disappears.

The principle of the occurrence of intra-layer separation and / or interfacial separation of the first separation layer 120 is that ablation occurs in the constituent material of the first separation layer 120 and that the first separation layer 120
It is presumed that this is due to the release of the gas contained in 20 and further to a phase change such as melting and evaporation occurring immediately after irradiation.

Here, ablation means that the fixing material (the constituent material of the first separation layer 120) that has absorbed the irradiation light is excited photochemically or thermally, and the bonding of atoms or molecules on its surface or inside is cut off. To release, mainly
All or a part of the constituent material of the first separation layer 120 is melted,
It appears as a phenomenon that causes a phase change such as transpiration (vaporization). In addition, the phase change may cause a very small firing state, and the bonding force may be reduced.

Whether the first separation layer 120 causes delamination
Whether or not interfacial delamination occurs, or both, depends on the first
Depending on the composition of the separation layer 120 and other various factors,
As one of the factors, conditions such as the type, wavelength, intensity, and reaching depth of the irradiated light are given.

The irradiation light may be any light as long as it causes intra-layer separation and / or interfacial separation in the first separation layer 120, such as X-rays, ultraviolet rays, visible light, infrared rays (heat rays), and the like. Examples include laser light, millimeter waves, microwaves, electron beams, and radiation (α rays, β rays, γ rays). Among them, a laser beam is preferable in that the separation (ablation) of the first separation layer 120 is easily caused.

Examples of a laser device for generating this laser beam include various gas lasers and solid-state lasers (semiconductor lasers). Excimer lasers, Nd-YAG lasers, Ar lasers, CO ₂ lasers, CO lasers, He— N
An e-laser or the like is suitably used, and among them, an excimer laser is particularly preferable.

Since the excimer laser outputs high energy in a short wavelength range, ablation can be caused in the first separation layer 2 in a very short time, so that the temperature of the adjacent transfer member 180, the substrate 100, and the like increases. The first separation layer 120 can be peeled with almost no occurrence, that is, without causing deterioration or damage.

In the case where the ablation of the first separation layer 120 is caused by the wavelength of light, it is preferable that the wavelength of the laser beam to be applied is about 100 nm to 350 nm.

FIG. 10 shows an example of the transmittance of the substrate 100 with respect to the wavelength of light. As shown, 200 nm
Has a characteristic that the transmittance sharply increases with respect to the wavelength. In such a case, light having a wavelength of 210 nm or more, for example,
Xe-Cl excimer laser light (wavelength 308 nm), K
Irradiation with rF laser light (wavelength 248 nm) or the like is performed.

When the first separation layer 120 is given a separation characteristic by causing a phase change such as gas release, vaporization, sublimation, etc., the wavelength of the laser light to be irradiated is from 350 to 12
It is preferably about 00 nm.

The energy density of the irradiated laser beam, particularly the energy density of an excimer laser, is
It is preferably about 10 to 5000 mJ / cm ² ,
More preferably, it is about 100 to 500 mJ / cm ² . The irradiation time is preferably about 1 to 1000 nsec, more preferably about 10 to 100 nsec. If the energy density is low or the irradiation time is short, sufficient ablation or the like does not occur, and if the energy density is high or the irradiation time is long, the irradiation light transmitted through the first separation layer 120 causes There is a risk of adverse effects.

As a countermeasure against the case where the irradiation light transmitted through the first separation layer 120 reaches the transfer receiving layer 140 and exerts an adverse effect, for example, the first separation layer (laser absorption layer) 1
There is a method of forming a metal film such as tantalum (Ta) on the substrate 20. As a result, the laser light transmitted through the first separation layer 120 is completely reflected at the interface of the metal film 124, and does not adversely affect the thin film device above it. Or,
On the first separation layer 120, a silicon-based intervening layer such as SiO ₂
, An amorphous silicon layer which is a silicon-based laser absorption layer can also be formed. Then, the light transmitted through the first separation layer 120 is absorbed by the amorphous silicon layer thereon. However, the transmitted light does not have enough light energy to cause ablation again in the upper amorphous silicon layer. In addition, unlike a metal, a thin film device layer can be formed on an amorphous silicon layer, so that a thin film device layer of excellent quality can be formed by a thin film forming technique already established.

Irradiation light typified by laser light is preferably irradiated so that its intensity becomes uniform. The irradiation direction of the irradiation light is not limited to the direction perpendicular to the first separation layer 120, and may be a direction inclined at a predetermined angle with respect to the first separation layer 120.

If the area of the first separation layer 120 is larger than the irradiation area of one irradiation light, the first separation layer 120
Irradiation light can be applied to the entire area of the laser beam in a plurality of times. The same location may be irradiated more than once.
Further, irradiation light (laser light) of different types and different wavelengths (wavelength ranges) may be irradiated to the same region or different regions twice or more.

Next, as shown in FIG. 5, a force is applied to the substrate 100 to separate the substrate 100 from the first separation layer 120. Although not shown in FIG. 5, after this separation, the substrate 1
On the other hand, the first separation layer 120 may be attached on the first layer.

[Step 6] Next, as shown in FIG. 6, the remaining first separation layer 120 is cleaned, etched,
It is removed by a method such as ashing or polishing, or a combination thereof. As a result, the transfer target layer (thin film device layer) 140 is transferred to the primary transfer member 180.

If a part of the first separation layer 120 adheres to the separated substrate 100, it is also removed.
When the substrate 100 is made of an expensive material such as quartz glass or a rare material, the substrate 100
Preferably, it is provided for reuse. That is, the present invention can be applied to the substrate 100 to be reused, and is highly useful. Here, in the case of the transfer once, this step is the final step, and the transfer of the transferred layer 140 to the final transfer member 180 is completed.

[Step 7] Next, as shown in FIG. 7, the secondary transfer layer 200 is bonded to the lower surface (exposed surface) of the thin film device layer 140 via the bonding layer 190.

Preferable examples of the adhesive constituting the adhesive layer 190 include a light-curable adhesive such as a reaction-curable adhesive, a thermosetting adhesive, and an ultraviolet-curable adhesive, and an anaerobic-curable adhesive. Various curable adhesives can be used. The adhesive may be of any composition, for example, epoxy, acrylate, or silicone. Such an adhesive layer 190
Is formed by, for example, a coating method. It should be noted that the material of the adhesive layer 190 is the same as
0 and the final transfer layer 180.

In the case where the curable adhesive is used, for example, the curable adhesive is applied to the lower surface of the layer to be transferred (thin film device layer) 140, and the secondary transfer member 200 is joined. The curing type adhesive is cured by a curing method according to the above, and the layer to be transferred (thin film device layer) 140 and the secondary transfer body 200 are bonded and fixed.

When the adhesive is of a photo-curing type, light is preferably irradiated from the outside of the light-transmissible secondary transfer member 200. As the adhesive, if a light-curing adhesive such as an ultraviolet-curing type that does not easily affect the thin film device layer is used, the light-transmitting primary transfer member 180 or the light-transmitting primary and secondary transfer members 180 can be used. , 200 from both sides.

It is to be noted that, unlike the drawing, an adhesive layer 190 may be formed on the side of the secondary transfer member 200, and a layer to be transferred (thin film device layer) 140 may be bonded thereon. Note that, for example, when the secondary transfer body 200 itself has an adhesive function, the formation of the adhesive layer 190 may be omitted.

The secondary transfer member 200 is not particularly limited, but includes a substrate (plate material), particularly a transparent substrate. Such a substrate may be a flat plate or a curved plate. In addition, the secondary transfer body 200 is
As compared with the above, characteristics such as heat resistance and corrosion resistance may be inferior. The reason is that, in the present invention, the transfer target layer (thin film device layer) 140 is formed on the substrate 100 side, and then the transfer target layer (thin film device layer) 140 is transferred to the secondary transfer body 200. This is because the characteristics required for the body 200, particularly the heat resistance, do not depend on the temperature conditions and the like when the transfer layer (thin film device layer) 140 is formed. This is the same for the primary transfer member 180.

Therefore, when the maximum temperature at the time of forming the transfer layer 140 is Tmax, the primary and secondary transfer members 18
As the constituent materials of 0,200, those having a glass transition point (Tg) or a softening point of Tmax or less can be used.
For example, the primary and secondary transfer members 180 and 200 preferably have a glass transition point (Tg) or a softening point of preferably 800 ° C. or less,
More preferably 500 ° C. or less, still more preferably 320 ° C.
It can be composed of a material having a temperature of ℃ or less.

The mechanical properties of the primary and secondary transfer members 180 and 200 preferably have a certain degree of rigidity (strength), but may have flexibility and elasticity.

The primary and secondary transfer members 180, 20
Examples of the constituent material 0 include various synthetic resins and various glass materials. Particularly, various synthetic resins and ordinary (low melting point) inexpensive glass materials are preferable.

The synthetic resin may be either a thermoplastic resin or a thermosetting resin. Examples thereof include polyolefins such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), and the like.
Cyclic polyolefin, modified polyolefin, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, polyimide, polyamideimide, polycarbonate, poly- (4-methylbenten-1), ionomer, acrylic resin, polymethyl methacrylate, acrylic-styrene Polyester, polyether, polyether such as polymer (AS resin), butadiene-styrene copolymer, polio copolymer (EVOH), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and precyclohexane terephthalate (PCT) Ketone (PEK), polyetheretherketone (PEEK), polyetherimide, polyacetal (POM), polyphenylene oxide, modified polyphenylene oxide, polyarylene DOO, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluorine-based resins, styrene-based,
Various thermoplastic elastomers such as polyolefin, polyvinyl chloride, polyurethane, fluoro rubber, chlorinated polyethylene, etc., ethoxy resin, phenol resin, urea resin, melamine resin, unsaturated polyester, silicone resin, polyurethane, etc., or these And copolymers, blends, polymer alloys and the like, and one or more of these can be used (for example, as a laminate of two or more layers).

Examples of the glass material include silicate glass (quartz glass), alkali silicate glass, soda lime glass, potassium lime glass, lead (alkali) glass, barium glass, borosilicate glass and the like. Of these, those other than silicate glass have a lower melting point than silicate glass, are relatively easy to mold and process, and are inexpensive, and are therefore preferable.

When the secondary transfer member 200 is made of synthetic resin, the large-sized secondary transfer member 200 can be integrally formed, and a complicated secondary transfer member such as one having a curved surface or unevenness can be used. It can be easily manufactured even with a simple shape, and various advantages such as low material cost and low manufacturing cost can be enjoyed. Therefore, the use of a synthetic resin is advantageous in manufacturing a large and inexpensive device (for example, a liquid crystal display).

The secondary transfer member 200 is, for example, a device constituting an independent device, such as a liquid crystal cell, or a device, such as a color filter, an electrode layer, a dielectric layer, an insulating layer, or a semiconductor element. , May constitute a part of the device.

Further, the primary and secondary transfer members 180 and 200
May be a substance such as metal, ceramics, stone, wood paper, etc., or on any surface constituting a product (on a clock, on an air conditioner, on a printed circuit board, etc.), or on a wall. , Columns, ceilings, windowpanes and the like.

[Step 8] Next, as shown in FIG. 8, the heat-meltable adhesive layer 160 as the second separation layer is heated and melted. As a result, the adhesive force of the heat-meltable adhesive layer 160 is weakened, so that the primary transfer member 180 can be separated by the thin film device layer 140. By removing the hot-melt adhesive adhered to the primary transfer member 180, the primary transfer member 180 can be reused repeatedly.

When the above-mentioned water-soluble adhesive is used as the second separation layer 160, at least the region including the second separation layer 160 may be immersed in pure water.

[Step 9] Finally, by removing the second separation layer 160 attached to the surface of the thin film device layer 140, the thin film device layer 140 transferred to the secondary transfer body 200 is removed as shown in FIG. Can be obtained. Here, the stacking relationship of the thin film device layer 140 with respect to the secondary transfer body 200 is the same as the initial stacking relationship of the thin film device layer 140 with respect to the substrate 100 as shown in FIG.

Through the above steps, the transfer of the transfer target layer (thin film device layer) 140 to the secondary transfer member 200 is completed. Thereafter, removal of the SiO ₂ film adjacent to the transfer target layer (thin film device layer) 140, formation of a conductive layer such as wiring on the transfer target layer 140, or formation of a desired protective film can also be performed.

In the present invention, the transferred layer (thin film device layer) 140, which is the object to be separated, is not directly separated, but is separated at the first separation layer 120 and the second separation layer 160 to form the secondary transfer member. 200, the transfer can be easily, reliably, and uniformly performed irrespective of the characteristics, conditions, and the like of the object to be separated (the layer to be transferred 140). No damage to)
High reliability of the transferred layer 140 can be maintained.

Next, an example of a specific manufacturing process shown in FIGS. 2 to 9 will be described with reference to FIGS.

(Step 1) As shown in FIG. 11, a first separation layer (for example, LP
Amorphous silicon layer formed by CVD method))
120, an intermediate layer (for example, an SiO ₂ film) 142, and an amorphous silicon layer (for example, formed by an LPCVD method) 143 are sequentially laminated, and then a laser beam is applied from above to the entire surface of the amorphous silicon layer 143. And anneal. Thereby, the amorphous silicon layer 143 is recrystallized to become a polysilicon layer.

(Step 2) Subsequently, as shown in FIG.
The polysilicon layer obtained by the laser annealing is patterned to form islands 144a and 144b.

(Step 3) As shown in FIG. 13, the gate insulating film 148 covering the islands 144a and 144b
a, 148b are formed by, for example, a CVD method.

(Step 4) As shown in FIG. 14, a gate electrode 150 made of polysilicon or metal is used.
a, 150b are formed.

(Step 5) As shown in FIG. 15, a mask layer 170 made of polyimide or the like is formed, and a gate electrode 15 is formed.
Using 0b and the mask layer 170 as a mask, ion implantation of, for example, boron (B) is performed in a self-aligned manner.
Thus, p ⁺ layers 172a and 172b are formed.

(Step 6) As shown in FIG. 16, a mask layer 174 made of polyimide or the like is formed, and the gate electrode 15 is formed.
Using the mask 0a and the mask layer 174 as a mask, for example, phosphorus (P) ion implantation is performed in a self-aligned manner. Thus, n ⁺ layers 146a and 146b are formed.

(Step 7) As shown in FIG. 17, after forming an interlayer insulating film 154 and selectively forming a contact hole,
The electrodes 152a to 152d are formed.

The TFT having the CMOS structure formed as described above corresponds to the layer to be transferred (thin film device layer) 140 in FIGS. Note that a protective film may be formed over the interlayer insulating film 154.

(Step 8) As shown in FIG.
A hot-melt adhesive layer 160 as a second separation layer is formed on the TFT having the configuration. At this time, the step formed on the surface layer of the TFT is flattened by the hot-melt adhesive 160.
The second separation layer can be formed of an ablation layer as in the case of the first separation layer, or a water-soluble adhesive can be used.

Here, it is preferable to first form a protective layer such as an insulating layer on a TFT which is a thin film device, and to provide a second separation layer on the protective layer. In particular, when the second separation layer is an ablation layer, the thin film device layer can be protected by the protective layer during ablation.

In particular, when the second separation layer is formed of an ablation layer, the second separation layer itself can be formed of a multilayer like the first separation layer. Further, it is more preferable to provide a light shielding layer such as a metal layer between the second separation layer and the thin film device layer. This is because light can be prevented from being incident on the thin film device layer during ablation.

After the formation of the second separation layer, the TFT is attached to the primary transfer member (for example, a soda glass substrate) 180 via the heat-meltable adhesive layer 160 as the second separation layer.

(Step 9) As shown in FIG.
For example, Xe-Cl excimer laser light is radiated from the back surface of 0. As a result, delamination occurs within the layer of the first separation layer 120 and / or at the interface.

(Step 10) As shown in FIG.
Peel off 00.

(Step 11) Further, the first separation layer 120 is removed by etching. Thereby, as shown in FIG. 21, the TFT having the CMOS structure is transferred to the primary transfer member 180.

(Step 12) Next, as shown in FIG.
A heat-meltable resin layer 160
For example, an epoxy resin layer 190 is formed as an adhesive layer having a lower curing point. Next, the epoxy resin layer 190
Is attached to a secondary transfer body (for example, a soda glass substrate) 200 via Subsequently, heat is applied to cure the epoxy resin layer 190, and the secondary transfer body 200 and the TFT
Are bonded (joined).

(Step 13) Next, as shown in FIG. 23, the heat-meltable resin layer 160 is melted by heat using, for example, an oven 210, and the TFT is primarily transferred with the heat-meltable resin layer 160 as a boundary. Peel off the body 180. Further, the heat-meltable resin layer 160 remaining on the lower surface of the TFT
Is removed by, for example, xylene. This allows
As shown in FIG. 24, the TFT is transferred to the secondary transfer body 200. The state of FIG. 24 corresponds to the state of the substrate 100 shown in FIG.
The first and second separation layers 120 are replaced with the secondary transfer member 200 and the adhesive layer 190. Therefore, TFT
The stacking relationship with the substrate 100 used in the manufacturing process of (1) is secured on the secondary transfer body 200. Therefore, the electrode 15
2a to 152d are exposed, and contact or wiring to them can be easily performed. After the state shown in FIG. 24, a protective layer may be formed on the surface layer.

In the above description, an example in which the first separation layer 120, the thin film device layer 140, and the like are formed by a normal manufacturing process has been described. A case of forming by a process will be described.

(Method of Forming Coated Insulating Film) Hereinafter, the intermediate layer 142, the gate insulating film 148 (the gate insulating films 148a and 148b shown in FIG. 13) and the interlayer insulating film 154 shown in FIG.
Will be described with reference to a liquid phase process for forming a coating insulating film. In this method, the separation layer 120 shown in FIG. It can also be applied to the case of forming with an oxide of.

FIG. 39 shows a coating type insulating film forming apparatus for forming a thin film, for example, an insulating film by applying a liquid and performing heat treatment. As a liquid which becomes an insulating film by being heat-treated after being applied, polysilazane (which is a generic name of a polymer having a Si—N bond) can be given. One of the polysilazanes is [SiH ₂ NH] n (n is a positive integer) and is called polyperhydrosilazane. This product is marketed by Tonen Corporation under the product name of "Tonen Polysilazane". When H in [SiH ₂ NH] n is substituted with an alkyl group (for example, a methyl group, an ethyl group, or the like), an organic polysilazane is formed, and may be distinguished from an inorganic polysilazane. In this embodiment, it is preferable to use inorganic polysilazane.

The polysilazane is mixed with a liquid such as xylene, and is spin-coated on a substrate, for example. This coating film is converted into SiO ₂ by heat treatment in an atmosphere containing water vapor or oxygen.

An SOG (Spin-On-Glass) film can be cited as an insulating film obtained by heat treatment after application. This SOG film is a polymer having a siloxane bond as a basic structure, and includes an organic SOG having an alkyl group and an inorganic SOG having no alkyl group, and alcohol or the like is used as a solvent. The SOG film is used as an interlayer insulating film of an LSI for the purpose of planarization. However, the organic SOG film is easily etched by the oxygen plasma treatment, and the inorganic SOG film has a problem that cracks easily occur even at a thickness of several thousand angstroms. Therefore, conventionally, a single layer is hardly used for an interlayer insulating film or the like, and is used only as a flattening layer on the CVD insulating film.

In this regard, polysilazane has high crack resistance and oxygen plasma resistance, and can be used as a thick insulating film even in a single layer. Therefore, the case where polysilazane is used will be described here.

In the present embodiment, at least one layer, preferably a plurality of layers, of the formed film including the thin film laminated structure to be transferred is formed by a coating film. It may be used additionally.

In FIG. 39, a loader 601 takes out a plurality of glass substrates contained in a cassette one by one and transports the glass substrates to a spin coater 602. In the spin coater 602, as shown in FIG. 46, the substrate 632 is vacuum-adsorbed on the stage 630, and
The polysilazane 638 is supplied to the substrate 63 from the 34 nozzle 636.
2 is dropped. The dropped polysilazane 638 spreads at the center of the substrate as shown in FIG. The mixed solution of polysilazane and xylene is put in a container called a canister can and stored in a liquid storage unit 605 shown in FIGS. A mixed solution of polysilazane and xylene is supplied from a liquid storage unit 605 through a supply pipe 640 to a dispenser 634.
And applied on the substrate. Stage 6
By the rotation of 30, the polysilazane 638 is stretched and applied to the entire surface of the glass substrate 632 as shown in FIG. At this time, most of the xylene evaporates. The rotation speed and rotation time of the stage 630 are controlled by the control unit 606 shown in FIG. 39, and the rotation speed increases to 1000 rpm in a few seconds, is held at 1000 rpm for about 20 seconds, and stops after a few seconds. Under these coating conditions, the thickness of the polysilazane coating film is about 7000 Å.

Next, the glass substrate is conveyed to the heat treatment section 603, and the temperature is set to 100-350 ° C. and 10-6 in a steam atmosphere.
Heat-treated for 0 minutes and converted to SiO2. This heat treatment is controlled by the temperature control unit 607. Heat treatment section 603
In order to increase the processing capacity of the coating type insulation film forming device,
The length of the heat treatment section 603 and the number of substrates accommodated in the furnace are set so that the tact time of the spin coater 602 matches the heat treatment time. For example, xylene is used as the liquid in which the polysilazane is mixed, and hydrogen or ammonia is generated at the time of denaturation. Therefore, at least the spin coater 602 and the heat treatment unit 603 require exhaust equipment 608. The glass substrate on which the insulating film is formed by the heat treatment is housed in a cassette by the unloader 604.

The coating type insulating film forming apparatus shown in FIG. 39 has a significantly simpler structure than the conventional CVD apparatus, and therefore, the apparatus price is significantly reduced. In addition, there are features such as higher throughput, easier maintenance, and higher operation rate of the CVD device than the CVD device. With this feature, the cost of the liquid crystal display device can be significantly reduced.

Here, the gate insulating film 148 shown in FIG. 2 is an important insulating film which affects the electrical characteristics of the TFT, and the interface characteristics with the silicon film must be controlled as well as the film thickness and film quality.

To this end, in addition to cleaning the surface state of the silicon film before the formation of the gate insulating film 148, it is preferable to use a coating type insulating film forming apparatus shown in FIG. The apparatus shown in FIG. 40 has a first heat treatment section 603A having the same function as the heat treatment section 603 of the apparatus shown in FIG.
Between the second heat treatment unit 603 and the unloader 604
B is provided. In the second heat treatment unit 603B, after the above-described heat treatment in the first heat treatment unit 603A, the first heat treatment
400-5 higher than the heat treatment temperature in the heat treatment part 603A
It is preferable to perform a heat treatment at 00 ° C. for 30 to 60 minutes or a high-temperature short-time heat treatment such as lamp annealing or laser annealing.

As a result, the insulating film such as the gate insulating film 148 is made more dense and the film quality and interface characteristics are improved as compared with the case where only the heat treatment is performed in the heat treatment unit 603 in FIG.

In terms of interface characteristics, a CVD film formed in a vacuum atmosphere is easier to control than a coating insulating film.
Of the insulating films constituting the FT, the gate insulating film may be formed of a CVD film, and the other insulating films may be formed of the coating insulating film according to the present invention.

(Method of Forming Coated Silicon Film) Next, FIG.
A method for forming one channel layer 143 with a coated silicon film using a liquid phase process will be described. In this method, the separation layer 120 shown in FIG. Amorphous silicon and B.I. The present invention can also be applied to a case where a semiconductor is used.

The coating solution storage unit 6 shown in FIG. 39 or FIG.
By preparing a liquid containing silicon particles as a coating liquid stored in the liquid crystal 05, a coated silicon film can be formed using the same apparatus as the apparatus shown in FIG. 39 or 40.

The silicon particles contained in the coating solution may have a particle size of, for example, 0.01 to 10 μm. The particle size of the silicon particles is selected according to the thickness of the silicon film to be applied. The particle size of the silicon particles obtained by the present inventors is about 1 μm,
Those having 0 μm or less accounted for 95%. The silicon particles having the desired particle size can be obtained by further miniaturizing the silicon particles having this particle size using a micronization device.

The silicon particles having a particle size within a predetermined range are made into a suspension mixed with a liquid such as alcohol, and stored in the coating liquid storage unit 605. Then, a suspension of silicon particles and alcohol is discharged onto the substrate carried into the spin coater 606 from the loader 605. Then, the stage 630 is rotated under the same coating conditions as the formation of the coating insulating film, and the coating film of the silicon particles is stretched on the substrate. At this time, most of the alcohol is evaporated.

Next, in the heat treatment section 603 or the first heat treatment section 603A, the substrate is heat-treated under the same heat treatment conditions as in the case of forming the coating insulating film. At this time, a silicon film crystallized by a reaction between silicon is formed on the substrate.

When the apparatus shown in FIG. 39 is used, the substrate is further subjected to a heat treatment at a temperature higher than the heat treatment temperature of the first heat treatment unit 603A in the second heat treatment unit 603B. This heat treatment is preferably performed in a short time by laser annealing or lamp annealing.

By performing the heat treatment again in the second heat treatment unit 603B, the crystallinity and the denseness of the silicon film and the adhesion to other films are compared with the heat treatment performed only in the first heat treatment unit 603A. The performance is improved.

FIGS. 41 and 42 are configuration diagrams of a film forming apparatus for continuously forming a coated silicon film and a coated insulating film.

The film forming apparatus shown in FIG.
, A first heat treatment unit 603A, a second heat treatment unit 603B, a second spin coater 602B,
The heat treatment unit 603 and the unloader 604 are connected in-line. The first spin coater 602A is connected to a first coating liquid storage unit 605A for storing a suspension of silicon particles and alcohol and a first control unit 606A.
The second spin coater 602B has a second coating solution storage 605 for storing a mixture of polysilazane and xylene.
B and the second control unit 606B are connected.

When the apparatus shown in FIG. 41 is used, the number of times of loading and unloading is reduced by one, thereby further increasing the throughput.

In the film forming apparatus shown in FIG. 42, the second heat treatment section 603B of the film formation apparatus shown in FIG.
3 shows a modified example for forming crystallized silicon, which is arranged after 3. In this case, the silicon film having the insulating cap layer is crystallized by the second heat treatment unit 603B that performs laser annealing or the like. Since the insulating film has an effect of reducing the reflectance of the silicon surface, there is an advantage that the laser energy is efficiently absorbed by the silicon film. Another characteristic is that the surface of the silicon film after laser annealing is smooth. Note that one heat treatment unit may be used as the heat treatment unit 603 and the second heat treatment unit 603B in FIG. In this case, in this combined heat treatment unit, firing of the applied insulating film,
The heat treatment for crystallization of the silicon film thereon can be performed simultaneously.

(Another Method for Forming a Coated Silicon Film) FIG. 43 shows another coating type silicon film forming apparatus for forming a silicon film by applying a coating solution and then performing heat treatment.
When forming a silicon film by the CVD method, monosilane (SiH ₄ ) or disilane (Si ₂ H ₆ ) is used.
In this embodiment mode, a higher-order silane such as disilane or trisilane (Si ₃ H ₈ ) is used. The boiling points of silanes are -111.9 ° C for monosilane, -14.5 ° C for disilane, 52.9 ° C for trisilane, and 1 for tetrasilane (Si ₄ H ₁₀ ).
08.1 ° C. Monosilane and disilane are gaseous at normal temperature and pressure, but higher order silanes than trisilane are liquid. Disilane becomes liquid at minus several tens of degrees Celsius and can be used as a coating film. Here, the case where trisilane is mainly used will be described.

In FIG. 43, the glass substrates are taken out one by one from the cassette by the loader 701 and transferred to the load lock chamber 702.
The pressure is reduced by 11. After reaching the predetermined pressure, the glass substrate moves to the spin coater 703 which is in a reduced pressure state substantially equal to the pressure, and trisilane is applied from the trisilane storage unit 707 via the dispenser onto the glass substrate. In the spin coating unit 703, the number of rotations is 100 to 2
The substrate is rotated at 000 rpm for several seconds to 20 seconds, and trisilane is spin-coated. The glass substrate spin-coated with trisilane is immediately conveyed to the first heat treatment unit 704 having the same pressure as the above pressure, and heat-treated at 300 to 450 ° C. for several tens minutes to form a silicon film having a thickness of several hundred angstroms. Is done. Next, the glass substrate is transported to a second heat treatment unit 705 which is substantially equal to the pressure,
Subject to high-temperature short-time heat treatment such as laser annealing and lamp annealing. Thereby, the silicon film is crystallized. Next, the glass substrate is transported to the load lock chamber 706 and returned to atmospheric pressure by nitrogen gas.
07 and stored in a cassette.

Here, one exhaust device 711 is connected to the two load lock chambers 702 and 706, and one exhaust device is connected to the spin coat unit 703 and the first and second heat treatment units 704 and 705. It is desirable to use two units. Then, the spin coater 703, the first heat treatment unit 704, and the second heat treatment unit 705 are constantly exhausted by the exhaust device 711, and the reduced pressure state of the inert atmosphere (about 1.0 to 0.5 atm) is maintained. Silanes are toxic and are intended to prevent gasified silanes from leaking out of the apparatus. The allowable concentration (TLV) of monosilane is 5 ppm, and it is considered that higher-order silanes such as disilane have the same allowable concentration. In addition, silanes burn naturally in normal temperature air,
High concentrations burn explosively. Therefore, at least the spin coater 703 and the first and second heat treatment units 704 and 70
The exhaust of the exhaust device 711 connected to 5 is connected to an exhaust gas treatment device 712 for detoxifying silanes. Note that FIG.
The processing chambers 701 to 707 are connected to each other by a gate valve, and the gate valve is opened and closed when the glass substrate is transported so that gasified silanes do not flow into the two load lock chambers.

Although the main part of the spin coater 703 is almost the same as in FIG. 46, it is preferable that the temperature of the stage on which the glass substrate is vacuum-chucked in FIG. Here, room temperature is desirably about 0 ° C. when trisilane is used, and −4 when disilane is used.
The temperature is controlled to 0 ° C or lower, preferably to -60 ° C or lower. Also,
It is preferable that the temperature control section 710 also controls the storage section 708 and the supply line (not shown) of disilane or trisilane to a temperature substantially equal to the stage temperature.

In order to apply disilane or trisilane as a liquid, the coating operation must be performed at a temperature lower than the boiling point. The vapor pressure of trisilane is about 0.4 atm at normal temperature and normal pressure, and the vapor pressure of disilane is about 0.4 atm. Pressure is normal pressure, -40 ℃
Considering that the pressure is about 0.3 atm, it is necessary to reduce the vapor pressure as much as possible. For this reason, it is preferable to lower the temperature of these silanes and the substrate as much as possible.

In order to lower the vapor pressure of disilane or trisilane and improve the uniformity of the coating film, the spin coater 703 and the first and second heat treatment units 704 and 705
It may be pressurized by an inert gas. In the pressurized state, the boiling point temperature of disilane or the like increases, and the vapor pressure at the same temperature decreases. Therefore, the temperature of the spin coater 703 can be set higher than the above-described set temperature and set to a temperature close to room temperature. In this case, in consideration of the possibility of leakage of trisilane or the like, a double structure capable of reducing the pressure outside the structure capable of pressurizing is provided. Is preferred. The exhaust gas is processed in an exhaust gas processing unit 712.

Further, the silane gas staying inside the spin coater 703 and the first and second heat treatment sections 704 and 705 is also exhausted by the exhaust device 711.

The silicon film forming apparatus shown in FIG.
This is an inline combination of the silicon film forming apparatus shown in FIG. 3 and the insulating film forming apparatus shown in FIG. That is, FIG.
Between the second heat treatment section 705 and the load lock chamber 706, the spin coat section 602 and the heat treatment furnace 603 in FIG.
Has been introduced.

In FIG. 44, the operation of the apparatus shown in FIG. 43 is the same until the silicon film is crystallized by laser annealing in the second heat treatment section 705. A polysilazane or an inorganic SOG film is applied to the crystallized silicon film in a spin coater 602. Next, the heat treatment unit 60
At 3, the applied film is transformed into an insulating film.

The spin coater 703 and the first and second heat treatment sections 704 and 705 are in a depressurized state in an inert gas atmosphere as in FIG. In FIG. 39, the spin coater 6 of the insulating film is used.
02 and the heat treatment unit 603 were at normal pressure, but in the apparatus of FIG. 44, the pressure is reduced in an inert gas atmosphere. The exhaust for this is performed by the exhaust device 608.

The silicon film formed according to FIG. 44 is not exposed to the air because the insulating film is formed in an inert atmosphere on the silicon film. Therefore, since the interface between the silicon film and the insulating film, which affects the characteristics of the TFT element, can be controlled, the characteristics of the TFT element and the uniformity of the characteristics can be improved.

In FIG. 44, the insulating film is formed on the silicon film after the crystallization of the silicon film. However, as in the apparatus shown in FIG. 42, the insulating film is formed after the first heat treatment of the silicon film. The crystallization of the silicon film may be performed after the heat treatment of the insulating film. In this case, as in the case of FIG. 42,
The silicon film provided with the cap layer of the insulating film is crystallized by laser annealing. Since the insulating film has an effect of reducing the reflectance of the silicon surface, there is an advantage that the laser energy is efficiently absorbed by the silicon film. Another characteristic is that the surface of the silicon film after laser annealing is smooth.

(Method for Forming Semiconductor Film Other Than Silicon) The semiconductor film serving as the channel layer can be formed of an organic semiconductor film. As this organic semiconductor film, there is pentacene (Pentacene) or the like, and a vapor deposition method or a solution casting method can be used as a film forming method.

(Method of Diffusing Impurities into Coated Silicon Film) As shown in FIGS. 15 and 16, the method of diffusing impurities into the silicon film serving as the source and drain regions is performed by using a conventional ion implantation apparatus or the like. However, it is preferable that after the impurity-containing insulating layer is applied, the impurity is diffused into the underlying silicon film.

The same device as that shown in FIG. 40 can be used for forming the impurity-containing insulating film. In this embodiment mode, an SOG film containing phosphorus glass or boron glass is applied as an impurity-containing coating film. When an N-type high-concentration impurity region is formed, a liquid containing a siloxane polymer is added to a liquid containing ethanol and ethyl acetate so that the Si concentration becomes several wt%.
An SOG film containing several hundred μg of P2O5 per ml is used as an impurity-containing coating film. In this case, the coating liquid is stored in the coating liquid storage unit 605 in FIG. 2, and the coating liquid is applied onto the substrate by the spin coater 602. Further, in the spin coater 602, by rotating the substrate at a rotation speed of several thousand rpm, several tens of thousands of
Angstrom film thickness is obtained. This impurity-containing coating film is heated at 300 ° C. to 500 ° C. in the first heat treatment section 603A.
Heat treatment at a temperature of ° C. to form a phosphorus glass film containing several mol% of P 2 O 5. The substrate on which the phosphorus glass film is formed is subjected to a high-temperature and short-time heat treatment such as lamp annealing or laser annealing in the second heat treatment section 603B, so that impurities in the SOG film are solid-phase diffused into the underlying silicon film. Then, a high concentration impurity region is formed in the silicon film. The TFT substrate is finally stored in a cassette by the unloader 604.

In the formation of the source / drain regions, both the application step and the annealing step at a high temperature for a short time can be performed within one minute, and the productivity is extremely high. Although the heat treatment process requires several tens of minutes, the tact time can be reduced by devising the length and structure of the heat treatment furnace.

According to this embodiment, the source / drain regions are formed by forming a coating film and heat treatment at high temperature for a short time instead of the conventional ion implantation or ion doping. Can be used to manufacture a TFT.

(Method of Forming Coated Conductive Film) Next, a liquid containing conductive particles is applied to form a conductive film 152 shown in FIG.
(The conductive films 152a, 1572b, and 152 shown in FIG.
c, 152d) will be described below. According to this method, the separation layer 120 is formed by F.I. It can also be used when formed as a metal. This coated conductive film can also be manufactured using the apparatus shown in FIG. 39 or FIG. At this time, as the liquid stored in the coating liquid storage unit 605 in FIGS. 39 and 40, a liquid in which fine particles of a conductive substance such as metal are dispersed in a liquid, for example, an organic solvent is used.
For example, a dispersion of silver fine particles having a particle size of 80 to 100 angstroms in an organic solvent such as terpineol or toluene is discharged from the spin coater 602 onto a substrate.
Thereafter, the substrate is rotated at 1000 rpm, and the coating solution is spin-coated on the substrate. Further, if heat treatment is performed at 250 to 300 ° C. in the heat treatment unit 603 in FIG. 39 or the first heat treatment unit 603A in FIG. 40, a conductive film of several thousand angstroms can be obtained. Au, Al, Cu, Ni, Co, C
The conductive film can be formed by a coating type conductive film forming apparatus.

Since the obtained conductive film is an aggregate of fine particles and is very active, the spin coater 602 and the heat treatment section 6
03 or the first heat treatment section 603A needs to be in an inert gas atmosphere.

Further, the resistance value of the applied conductive film may be about one digit higher than the bulk resistance value. In this case, when the applied conductive film is further heat-treated at 300 to 500 ° C. in the second heat treatment section 603B in FIG. 40, the resistance value of the conductive film is reduced. At the same time, the contact resistance between the source region of the TFT and the source wiring formed of the applied conductive film, and the contact resistance between the drain region and the drain electrode formed of the applied conductive film can be reduced. When a high-temperature and short-time heat treatment such as lamp annealing or laser annealing is performed in the second heat treatment unit 603B, it is possible to more effectively reduce the resistance of the applied conductive film and reduce the contact resistance. In addition, reliability can be improved by forming different kinds of metals in multiple layers. Since Ag is relatively easily oxidized in air, it is preferable to form Al, Cu, or the like which is hardly oxidized in air on Ag.

(Other Method for Forming Coated Conductive Layer) This method is a method of forming a conductive film by forming a metal plating layer on a coated ITO film described later.

FIG. 45 is a flow chart showing the process of applying Ni plating on the surface of the applied ITO. Step 1 in FIG.
Then, a coated ITO film is formed by the method described above. Next, in step 2, the surface of the applied ITO is light-etched, for example, to activate the surface. In step 3, as a pre-process of the Ni plating process in step 4,
A process of attaching a complex salt of Pd / Sn to the surface of TO and then depositing Pd on the surface is performed.

In the Ni plating step of Step 4, for example, by performing an electroless plating step, Pd deposited on the surface of the applied ITO is replaced with Ni, and Ni plating is performed. In step 4, the Ni plating layer is further annealed, whereby the plating layer is densified. Finally,
In step 5, a noble metal plating as an antioxidant layer, for example, Au plating is performed on the Ni plating to complete the conductive layer.

According to this method, a conductive layer other than the transparent electrode can be formed by forming a plating layer while using the coated ITO film as a base.

(Coating Method Other Than Spin Coating) FIGS. 48 to 50 are views showing a coating apparatus for coating a liquid for forming a thin film or a liquid such as a resist used for a mask at the time of photoetching. In this embodiment mode, a resist is described as an example of a liquid to be applied. The present invention can be used not only for resist coating but also for forming the above-mentioned various coating films. In FIG. 48, a substrate 802 is vacuum-adsorbed on a stage 801. Resist is liquid storage unit 8
07 from the dispenser head 80 through the supply pipe 806
4 is supplied. The resist is further supplied from a plurality of nozzles 805 provided on the dispenser head 807 to the substrate 8.
02 is applied as a very large number of dots 803.

FIG. 49 shows a detailed sectional view of the nozzle 805. FIG. 49 shows a structure similar to that of a head of an ink jet printer, in which a resist is discharged by vibration of a piezo element. The resist accumulates in the cavity 813 from the entrance 811 via the supply port 812. Diaphragm 8
The diaphragm 815 moves due to the expansion and contraction of the piezo element 814 that is in close contact with 15, and the volume of the cavity 813 decreases or increases. The resist is discharged from the nozzle port 816 when the volume of the cavity 813 decreases, and
When the volume of 3 increases, the resist is supplied from the supply port 812 to the cavity 813. For example, as shown in FIG. 50, a plurality of nozzle openings 816 are two-dimensionally arranged. As shown in FIG. 48, when the substrate 802 or the dispenser 804 relatively moves, a resist is formed on the entire surface of the substrate. It is applied in a shape. In FIG.
Regarding the arrangement pitch of the nozzle openings 816, the horizontal pitch P1 is several hundred μm, and the vertical pitch P2 is several mm. The diameter of the nozzle port 816 is several tens μm to several hundred μm.
The discharge amount per discharge is several tens of ng to several hundred ng, and the size of the resist droplet to be discharged is several tens μm to several tens of diameter in diameter.
00 μm. The resist applied in a dot shape has a circular shape of several hundred μm immediately after being discharged from the nozzle 805. When a resist is applied to the entire surface of the substrate, the pitch of the dots 803 is set to several hundreds of micrometers, and the substrate is rotated at a rotation speed of several hundred to several thousand rpm for several seconds to obtain a coating film having a uniform film thickness. The thickness of the coating film depends not only on the number of rotations and the rotation time of the substrate but also on the diameter of the nozzle port 816 and the dot 80.
Control can also be performed by the pitch of No. 3.

This resist coating method is an ink-jet type liquid coating method and is applied in the form of dots over the entire surface of the substrate. Therefore, the substrate is moved, for example, rotated so that the resist is applied to portions where there is no resist between the dots 803. Therefore, the resist can be used efficiently.
Since this method can be applied not only to the formation of a resist but also to the formation of the insulating film, silicon film, and conductive film formed by the above-described coating film, it has a very large effect in reducing the cost of the liquid crystal display device. is there.

Further, in the liquid application of the ink jet system, the diameter of the nozzle port 816 can be further reduced, so that the liquid can be applied to a linear pattern having a width of 10 to 20 μm. If this technique is used for forming a silicon film or a conductive film, direct drawing without the need for a photolithography step can be performed. TFT design rule is tens of μm
To the extent possible, by combining this direct drawing and the thin film forming technique of the coating method, it becomes possible to manufacture a liquid crystal display device without using a CVD device, a sputtering device, an ion implantation or ion doping device, an exposure device, and an etching device. . That is, the liquid crystal display device can be manufactured only by the ink jet type liquid application device according to the present invention and the heat treatment device such as the laser annealing device and the lamp annealing device.

(Regarding Other Film Forming Methods) Separation Layer 1
20 to E. In the case of using an organic polymer material, a liquid organic polymer is applied by a spin coating method or the like and then baked to form a coating film. The adhesive layer 160 illustrated in FIG. 18 can also be formed using a coating film. The separation layer 120 is formed of B.I. ~ C. Can be obtained by applying a liquid ceramic material and then sintering by heat treatment, preferably low-temperature heat treatment such as laser annealing.

(Second Embodiment) When the technique described in the first embodiment is used, for example, FIG.
A microcomputer configured using a thin film device as shown in (a) can be formed on a desired substrate.

In FIG. 25 (a), the CPU 300 and the R, each of which has a circuit using a thin film device, are mounted on a flexible substrate 182 as a secondary transfer member made of plastic or the like.
The AM 320, the input / output circuit 360, and a solar cell 340 having an amorphous silicon PIN junction for supplying a power supply voltage for these circuits are mounted.

Since the microcomputer shown in FIG. 25A is formed on a flexible substrate 182 as a secondary transfer member, it is resistant to bending as shown in FIG. 25B and falls because it is lightweight. Is also strong.
The plastic substrate 182 shown in FIG.
The case of the electronic device may also be used. This makes it possible to manufacture an electronic device in which the thin-film device is transferred to at least one of the inner surface and the outer surface of the case.

(Third Embodiment) In the present embodiment,
An example of a manufacturing process when an active matrix type liquid crystal display device using an active matrix substrate as shown in FIG. 26 is manufactured using the above-described thin film device transfer technique will be described.

(Configuration of Liquid Crystal Display Device) As shown in FIG. 26, the active matrix type liquid crystal display device has an illumination light source 400 such as a backlight, a polarizing plate 420, an active matrix substrate 440, a liquid crystal 460, a counter substrate 480,
A polarizing plate 500 is provided.

When a flexible substrate such as a plastic film is used for the active matrix substrate 440 and the counter substrate 480 of the present invention, a flexible liquid crystal panel using a reflector instead of the illumination light source 400 can be used. It is possible to realize an active matrix type liquid crystal panel which is strong, shock-resistant and lightweight. When the pixel electrode is formed of metal, the reflector and the polarizing plate 420 are not required.

An active matrix substrate 440 used in this embodiment is a driver-incorporated active matrix substrate in which TFTs are arranged in a pixel portion 442 and a driver circuit (scanning line driver and data line driver) 444 is mounted. is there.

FIG. 27 is a sectional view of a main part of this active matrix type liquid crystal display device, and FIG. 28 is a circuit configuration of a main part of the liquid crystal display device.

As shown in FIG. 28, the pixel portion 442
The liquid crystal 460 includes a TFT (M1) having a gate connected to the gate line G1, one of the source and drain connected to the data line D1, and the other of the source and drain connected to the liquid crystal 460.

The driver section 444 is provided with the T of the pixel section.
TFT formed by the same process as FT (M1)
(M2).

As shown on the left side of FIG.
The TFT (M1) at 42 has a source / drain layer 1
100a, 1100b, a channel 1100e, a gate insulating film 1200a, a gate electrode 1300a, an insulating film 1500, and source / drain electrodes 1400a, 1400.
400b.

Reference numeral 1700 denotes a pixel electrode, and reference numeral 1702 denotes a pixel electrode 1700 corresponding to a liquid crystal 460.
Shows a region where a voltage is applied (region where a voltage is applied to the liquid crystal). In the figure, the alignment film is omitted. The pixel electrode 1700 is made of ITO (in the case of a light transmission type liquid crystal panel) or metal such as aluminum (in the case of a reflection type liquid crystal panel).

As shown on the right side of FIG. 27, the TFT (M2) forming the driver section 444 includes a source / drain layer 1100c, 1100d, a channel 1100f, a gate insulating film 1200b, and a gate electrode 1300b. , An insulating film 1500, and source / drain electrodes 1400c and 1400d.

In FIG. 27, reference numeral 480 is used.
Is, for example, a counter substrate (for example, a soda glass substrate), and reference numeral 482 is a common electrode. Reference numeral 1000 denotes an SiO ₂ film, reference numeral 1600 denotes an interlayer insulating film (for example, an SiO ₂ film), and reference numeral 18 denotes
00 is an adhesive layer. Reference numeral 1900 denotes a substrate (transfer body) made of, for example, a soda glass substrate.

(Manufacturing Process of Liquid Crystal Display Device) Hereinafter, the manufacturing process of the liquid crystal display device of FIG. 27 will be described with reference to FIGS.
This will be described with reference to FIG.

First, through the same manufacturing process as in FIGS. 11 to 21, the TFTs (M1, M2) as shown in FIG. 29 are mounted on a substrate 3000 (for example, a quartz substrate) having high reliability and transmitting a laser beam. To form a protective film 1600. In FIG. 29, reference numeral 3100 denotes a first separation layer (laser absorption layer). In FIG. 29, T
The FTs (M1, M2) are both n-type MOSFETs. However, the present invention is not limited to this.
It may have an SFET or CMOS structure.

Next, as shown in FIG.
0 is selectively etched to form a pixel electrode 1700 made of a metal such as an ITO film or aluminum which is connected to the electrode 1400a. When an ITO film is used, a transmissive liquid crystal panel is used. When a metal such as aluminum is used, a reflective liquid crystal panel is used.

Next, as shown in FIG. 31, a substrate 1900 as a primary transfer member is joined (adhered) via a heat-meltable adhesive layer 1800 as a second separation layer. Note that the second separation layer can be formed of an ablation layer as in the case of the first separation layer.

Next, as shown in FIG.
Then, an excimer laser beam is irradiated from the back surface of the substrate, and thereafter, the substrate 3000 is peeled off.

Next, the first separation layer (laser absorption layer) 31
Remove 00. As a result, as shown in FIG. 32, the pixel unit 442 and the driver unit 44
Transferred to 0.

[0214] Next, as shown in FIG. 33, through the thermosetting adhesive layer 2000, the second transfer member 2100, SiO ₂
It is bonded to the lower surface of the film 1000.

Thereafter, for example, the primary transfer member 1900 is placed on an oven, the hot-melt adhesive 1800 is melted, and the primary transfer member 1900 is detached. Protective film 1600
And the hot-melt adhesive layer 1 attached to the pixel electrode 1700
900 is also removed.

As a result, as shown in FIG. 34, the active matrix substrate 4 transferred to the secondary transfer member 2100
40 is completed. The pixel electrode 1700 is exposed from the surface layer, and can be electrically connected to the liquid crystal. Thereafter, the insulating film (SiO 2) of the active matrix substrate 440 is formed.
Intermediate layer such as ₂ ) 1000 and the pixel electrode 170
Then, an alignment film is formed on the surface of No. 0 to perform an alignment process. FIG.
In 4, the alignment film is omitted.

Further, as shown in FIG. 27, a common electrode opposed to the pixel electrode 1700 is formed on the surface thereof, and the opposing substrate 480 whose surface is subjected to the alignment treatment and the active matrix substrate 440 are sealed with a sealing material ( The substrate is sealed with a sealing material, and liquid crystal is sealed between the two substrates to complete a liquid crystal display device.

Among the coating films on the members constituting the liquid crystal display device described above, those having the same functions as the films described in the first embodiment are shown in the first embodiment. It can be formed using a liquid phase process.

Hereinafter, a liquid phase process for forming the transparent electrode 1700 as a coating film will be described.

(Method of Forming Transparent Electrode)
A method for forming a transparent electrode using a film will be described. This ITO film can also be formed using the same apparatus as in FIG. The coating solution used in the present embodiment is a liquid solution in which 8% of organic indium and organotin are mixed in xylol at a ratio of 97: 3 (for example, Adeka ITO Co., Ltd., a product name of Asahi Denka Kogyo KK). Film / ITO-103L). In addition, as the coating liquid, a liquid having a ratio of organic indium to organic tin in a range of 99: 1 to 90:10 can be used. This coating liquid is stored in the coating liquid storage unit 605 in FIG.

This coating liquid is discharged onto a substrate by a spin coater 602, and is spin-coated by rotating the substrate.

Next, a heat treatment is performed on the coating film. The heat treatment conditions at this time were set as follows. First, FIG.
0 in the first heat treatment section 603A, 250 ° C. to 450 ° C.
The first heat treatment was performed in air or an oxygen atmosphere for 30 minutes to 60 minutes. Next, second heat treatment was performed in a hydrogen-containing atmosphere at 200 ° C. to 400 ° C. for 30 minutes to 60 minutes in the second heat treatment section 603B. As a result, the organic component is removed, and the mixed film of indium oxide and tin oxide (I
(TO film) is formed. By the above heat treatment, the film thickness becomes about 5
An ITO film having a thickness of 00 Å to about 2000 Å has a sheet resistance of 10 ² Ω / □ to 10 ⁴ Ω / □.
Thus, the light transmittance becomes 90% or more, and an ITO film having sufficient performance as the pixel electrode 41 can be obtained. The sheet resistance of the ITO film after the first heat treatment is 10 ⁵ to 10 ⁶
Although it is of the order of Ω / □, the sheet resistance is reduced to the order of 10 ² to 10 ⁴ Ω / □ by the second heat treatment.

In forming the coated ITO film, the coated ITO film and the coated insulating film can be manufactured in-line by the apparatus shown in FIG. 41 or FIG. By doing so, the surface of the active coated ITO film immediately after formation can be protected by the insulating film.

In this embodiment, a thin film device has been described by taking a TFT active matrix substrate as an example.
Film diodes, MIS (metal-insulation-silicon), and other two-terminal and three-terminal elements can be used as pixel switching elements. For example, the thin-film laminated structure of an active matrix substrate using a TFD does not include a semiconductor layer and includes only a conductive layer and an insulating layer. In this case, the present invention can be applied. Further, the present invention may use not only an active matrix substrate but also a display element using, for example, EL (electroluminescence) without using liquid crystal. Furthermore, the present invention is applied to a thin film device having various thin film laminated structures including a conductive layer and an insulating layer and further including a semiconductor layer, such as a semiconductor device including a TFT, a DMD (Digital Mirror Device), etc. Is applicable.

Further, as a use form of the thin-film device manufactured by the transfer method of the present invention, an ID such as a product price is used.
Can be replaced by an ID circuit that can be replaced with a conventional barcode symbolizing the following. In this case, for example, a label-shaped transfer body to which a thin film device has been transferred is attached to various articles via a double-sided tape. By energizing the ID circuit attached to the article, the ID of the article is read.

(Fourth Embodiment) FIG. 35 shows a fourth embodiment of the present invention.

In the present embodiment, the above-described method of transferring a thin film device is executed a plurality of times, and a plurality of patterns including the thin film device are transferred onto a substrate (transfer) larger than the transfer source substrate. First, a large-scale active matrix substrate is formed.

That is, the transfer is performed a plurality of times on the large substrate 7000 to form the pixel portions 7100a to 7100P. As shown by the dashed line on the upper side of FIG. 35, a TFT and a wiring are formed in the pixel portion. FIG.
5, reference numeral 7210 denotes a scanning line, reference numeral 7200 denotes a signal line, reference numeral 7220 denotes a gate electrode, and reference numeral 7230 denotes a pixel electrode.

By repeatedly using a highly reliable substrate, or by transferring a thin film pattern a plurality of times using a plurality of first substrates, a large-scale active matrix mounting a highly reliable thin film device can be obtained. A substrate can be created.

(Fifth Embodiment) FIG. 36 shows a fifth embodiment of the present invention.

This embodiment is characterized in that the above-described method of transferring a thin film device is executed a plurality of times, and a design rule (ie, a design rule in pattern design) is set on a substrate larger than the transfer source substrate. Is to transfer a plurality of patterns including different thin film devices (that is, thin film devices having different minimum line widths).

In FIG. 36, the pixel portions (7100a to 710) are provided on the active matrix substrate on which the driver is mounted.
A driver circuit (8000 to 8032) formed by a finer manufacturing process than that of the substrate circuit 6000 is formed around the substrate 6000 by multiple transfers.

The shift register constituting the driver circuit operates at a logic level under a low voltage, so that the breakdown voltage may be lower than that of the pixel TFT.
Higher integration can be achieved by making the TFT smaller than T.

According to the present embodiment, a plurality of circuits having different design rule levels (ie, different manufacturing processes) can be realized on one substrate. The sampling means (the thin film transistor M2 in FIG. 25) for sampling the data signal under the control of the shift register is provided in the pixel TF
Since a high breakdown voltage is required as in the case of T, the pixel TFT is preferably formed by the same process / design rule as the pixel TFT.

(Sixth Embodiment) FIG. 37 and FIG.
Modified example using the same, for example, amorphous silicon layer 220 as the first separation layer 120 of the first embodiment, instead of the hot-melt adhesive layer 160 as the second separation layer used in the first embodiment. Is shown. As shown in FIG. 37, a primary transfer member 180 is bonded on this humorous silicon layer 220 via an adhesive layer 230. FIG.
7 shows a light irradiation step for causing ablation in the first separation layer 120. The light irradiation step is performed after the light irradiation step of FIG. 37 corresponding to the step of FIG. Removed from the lower surface of the thin film device layer 140,
As shown in FIG. 38, the secondary transfer body 200 is joined via the adhesive layer 190. Thereafter, as shown in FIG. 38, for example, the amorphous silicon layer 2 is placed on the primary transfer member 180 side.
20 is irradiated with light. Thus, ablation occurs in the amorphous silicon layer 220. As a result, the primary transfer member 180 and the adhesive layer 230 are separated from the thin film device layer 14.
0 can be removed.

As described above, in the present invention, the thin film device layer 140 may be transferred to the secondary transfer member 200 by causing ablation in both the first and second separation layers sequentially.

[0237]

Next, specific examples of the present invention will be described.

(Example 1) A quartz substrate having a length of 50 mm, a width of 50 mm and a thickness of 1.1 mm (softening point: 1630 ° C., strain point: 10
70 ° C., excimer laser transmittance: almost 100%), and an amorphous silicon (a-Si) film as a first separation layer (laser light absorbing layer) is formed on one surface of the quartz substrate with a low pressure CV.
It was formed by Method D (Si ₂ H ₆ gas, 425 ° C.). The thickness of the first separation layer was 100 nm.

Next, on the first separation layer, Si was used as an intermediate layer.
An O ₂ film was formed. A liquid phase process was used to form this SiO ₂ film. That is, polysilazane (trade name) manufactured by Tonen Co., Ltd. was mixed with xylene, spin-coated on a substrate, and this coated film was converted into a SiO ₂ film by heat treatment in an atmosphere containing water vapor. The thickness of this intermediate layer is 2
00 nm.

Next, on the intermediate layer, a layer having a thickness of 5
A 0 nm amorphous silicon film is formed by a low pressure CVD method (Si ₂ H ₆ gas, 425 ° C.), and the amorphous silicon film is crystallized by irradiating the amorphous silicon film with laser light (wavelength 308 nm). And Thereafter, the polysilicon film was subjected to predetermined patterning to form a region serving as a source, a drain, and a channel of the thin film transistor. Thereafter, a gate insulating film SiO ₂ made of the above polysilazane was formed using the same liquid phase process as that for the intermediate layer SiO ₂ . Thereafter, a gate electrode was formed on the gate insulating film by a liquid phase process. For this purpose, Asahi Denka Kogyo Co., Ltd. trade name: ADEKA ITO coating film / spin coating of a coating liquid in which ITO-103L is made into a liquid state, and the spin coating is performed in the first and second heat treatment units 603A and 603B. Heat treatment and coating I
A TO film was formed. Then, on the coated ITO film, FIG.
The metal plating layer was formed by the procedure described above. Then, apply ITO
The film and the metal plating layer were patterned to form a gate electrode. By performing ion implantation using the gate electrode as a mask, source / drain regions were formed in a self-aligned manner (self-aligned), and a thin film transistor was formed. Thereafter, if necessary, electrodes and wirings connected to the source / drain regions and wirings connected to the gate electrodes are formed. These electrodes and wirings were also formed using the same material and the liquid phase process in the same manner as the gate electrodes.

Next, a hot-melt adhesive (product name: proof wax) was applied on the thin film transistor, and the primary transfer member was 200 mm long × 300 mm wide × 1.1 mm thick.
Large transparent glass substrate (soda glass, softening point: 7)
(40 ° C., strain point: 511 ° C.).

Next, a Xe-Cl excimer laser (wavelength:
(308 nm) from the quartz substrate side to cause peeling (intralayer peeling and interface peeling) of the first separation layer. X irradiated
The energy density of the e-Cl excimer laser is 250 mJ
/ cm ² , and the irradiation time was 20 nsec. Excimer laser irradiation includes spot beam irradiation and line beam irradiation. In the case of spot beam irradiation, spot irradiation is performed on a predetermined unit area (for example, 8 mm × 8 mm), and this spot irradiation is performed 1/1 of the unit area. Irradiation is performed while shifting by about 10 steps. In the case of line beam irradiation, a predetermined unit area (for example, 378 mm × 0.1 mm or 378 mm × 0.
Irradiate 3 mm (these are regions where 90% or more of energy can be obtained) while shifting them by about 1/10. This allows each point of the first separation layer to be at least 10
Receive irradiation twice. This laser irradiation is performed while shifting the irradiation area over the entire surface of the quartz substrate.

Thereafter, the quartz substrate and the glass substrate primary (transfer body) are peeled off at the first separation layer, and the thin film transistor and the intermediate layer formed on the quartz substrate are primarily transferred to the glass substrate side as the primary transfer body. did.

Thereafter, the first separation layer adhered to the surface of the intermediate layer on the glass substrate side was removed by etching, washing or a combination thereof. The same processing was performed on the quartz substrate, and the quartz substrate was reused.

Further, an ultraviolet curable adhesive was applied to the exposed lower surface of the intermediate layer (film thickness: 100 μm), and the coating film was further applied as a secondary transfer member to a length of 200 mm × width of 300 mm ×
After joining a large transparent glass substrate (soda glass, softening point: 740 ° C., strain point: 511 ° C.) having a thickness of 1.1 mm, the adhesive is cured by irradiating ultraviolet rays from the glass substrate side. The adhesive was fixed.

Thereafter, the hot-melt adhesive was melted by heat to remove the glass substrate as the primary transfer member. As a result, the thin film transistor and the intermediate layer were secondarily transferred to the glass substrate side as the secondary transfer body. The primary transfer member can be reused by washing.

Here, if the glass substrate serving as the primary transfer member is a substrate larger than the quartz substrate, the primary transfer from the quartz substrate to the glass substrate as in this embodiment is repeatedly performed on different areas in a plane. On the glass substrate, more thin film transistors than the number of thin film transistors that can be formed on the quartz substrate can be formed. Further, the thin film transistor can be repeatedly stacked over a glass substrate to form more thin film transistors. Alternatively, a glass substrate serving as a secondary transfer body is made larger than the primary transfer body and the quartz substrate, and the secondary transfer is repeatedly performed to form more thin film transistors than the number of thin film transistors that can be formed on the quartz substrate. Can also.

Example 2 A thin film transistor was transferred in the same manner as in Example 1 except that the first separation layer was an amorphous silicon film containing 20 at% of H (hydrogen).

The amount of H in the amorphous silicon film was adjusted by appropriately setting the conditions at the time of film formation by the low-pressure CVD method.

Example 3 A thin film transistor was manufactured in the same manner as in Example 1 except that the first separation layer was a ceramic thin film (composition: PbTiO ₃ , thickness: 200 nm) formed by a sol-gel method by spin coating. Was transferred.

Example 4 A first separation layer was formed by sputtering a ceramic thin film (composition: BaTiO 3).
₃ , the film thickness: 400 nm), and the thin film transistor was transferred in the same manner as in Example 1.

(Example 5) A ceramic thin film having a first separation layer formed by a laser-ablation method (composition:
The transfer of the thin film transistor was performed in the same manner as in Example 1 except that Pb (Zr, Ti) O ₃ (PZT), film thickness: 50 nm).

Example 6 A thin film transistor was transferred in the same manner as in Example 1 except that the first separation layer was a polyimide film (thickness: 200 nm) formed by spin coating.

(Example 7) A polyphenylene sulfide film (thickness:
A thin film transistor was transferred in the same manner as in Example 1 except that the thickness was set to 200 nm.

Example 8 A thin film transistor was transferred in the same manner as in Example 1 except that the first separation layer was an Al layer (thickness: 300 nm) formed by sputtering.

(Example 9) Example 2 was repeated except that a Kr-F excimer laser (wavelength: 248 nm) was used as the irradiation light.
The transfer of the thin film transistor was performed in the same manner as described above. The energy density of the irradiated laser was 250 mJ / c
m ² , and the irradiation time was 20 nsec.

Example 10 Nd-YA was used as the irradiation light.
The transfer of the thin film transistor was performed in the same manner as in Example 2 except that an IG laser (wavelength: 1068 nm) was used. The energy density of the irradiated laser was 400 mJ / c
m ² , and the irradiation time was 20 nsec.

(Example 11) A thin film transistor of a polysilicon film (thickness: 80 nm) formed by a high-temperature process at 1000 ° C was used in the same manner as in Example 1 except that the transfer layer was a thin film transistor.
The transfer of the thin film transistor was performed.

Example 12 A thin film transistor was transferred in the same manner as in Example 1 except that a transparent substrate made of polycarbonate (glass transition point: 130 ° C.) was used as a transfer body.

Example 13 A thin film transistor was transferred in the same manner as in Example 2 except that a transparent substrate made of an AS resin (glass transition point: 70 to 90 ° C.) was used as a transfer body.

Example 14 A thin film transistor was transferred in the same manner as in Example 3 except that a transparent substrate made of polymethyl methacrylate (glass transition point: 70 to 90 ° C.) was used as a transfer body.

Example 15 A thin film transistor was transferred in the same manner as in Example 5, except that a transparent substrate made of polyethylene terephthalate (glass transition point: 67 ° C.) was used as a transfer body.

Example 16 A thin film transistor was transferred in the same manner as in Example 6, except that a transparent substrate made of high-density polyethylene (glass transition point: 77 to 90 ° C.) was used as a transfer body. (Example 17) A thin film transistor was transferred in the same manner as in Example 9 except that a transparent substrate made of polyamide (glass transition point: 145 ° C) was used as a transfer body.

Example 18 A thin film transistor was transferred in the same manner as in Example 10 except that a transparent substrate made of an epoxy resin (glass transition point: 120 ° C.) was used as a transfer body.

Example 19 A thin film transistor was transferred in the same manner as in Example 11, except that a transparent substrate made of polymethyl methacrylate (glass transition point: 70 to 90 ° C.) was used as a transfer body.

In each of Examples 1 to 19, when the state of the transferred thin film transistor was visually observed with the naked eye and a microscope, it was found that all of the thin film transistors were uniformly transferred without any defect or unevenness.

As described above, the use of the transfer technique of the present invention makes it possible to secondarily transfer a thin-film device (transferred layer) to various transfer members while maintaining the stacking order formed on the substrate. Become. For example, even when a thin film cannot be directly formed or is not suitable for forming, a material that is easily formed, a material formed of an inexpensive material, or a large object that is difficult to move, it is transferred. To form it.

In particular, as the transfer body, materials having inferior properties such as heat resistance and corrosion resistance as compared with the substrate material, such as various synthetic resins and glass materials having a low melting point, can be used. Therefore, for example, when manufacturing a liquid crystal display in which a thin film transistor (especially a polysilicon TFT) is formed on a transparent substrate, a quartz glass substrate having excellent heat resistance is used as a substrate, and various synthetic resins and low melting points are used as a transfer body. By using a transparent substrate made of an inexpensive and easy-to-process material such as a glass material, a large and inexpensive liquid crystal display can be easily manufactured. Such advantages are not limited to the liquid crystal display, but are the same in the manufacture of other devices.

Further, while enjoying the above advantages,
A transferable layer such as a functional thin film can be formed and patterned on a highly reliable substrate, especially a substrate with high heat resistance such as a quartz glass substrate, regardless of the material characteristics of the transfer body. Thus, a highly reliable functional thin film can be formed on the transfer member.

Although such a highly reliable substrate is expensive, it can be reused, thereby reducing the manufacturing cost.

According to another aspect of the present invention, as described above, the first and second separation layers and the primary and secondary transfer members are not necessarily used, and only one separation layer and one transfer member are used. It is also possible to transfer the transferable layer having a shape-retaining property from the substrate to the transfer body side. In order to give the transferred layer itself shape retention properties, thicken the insulating layer in the thin film device,
Alternatively, a reinforcing layer can be formed.

[0272]

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a first step in a first embodiment of a method for transferring a thin film device of the present invention.

FIG. 2 is a sectional view showing a second step in the first embodiment of the method for transferring a thin film device of the present invention.

FIG. 3 is a sectional view showing a third step in the first embodiment of the method for transferring a thin film device of the present invention.

FIG. 4 is a sectional view showing a fourth step in the first embodiment of the method for transferring a thin film device of the present invention.

FIG. 5 is a cross-sectional view showing a fifth step in the first embodiment of the method for transferring a thin film device of the present invention.

FIG. 6 is a sectional view showing a sixth step in the first embodiment of the method for transferring a thin film device of the present invention.

FIG. 7 is a cross-sectional view showing a seventh step in the first embodiment of the method for transferring a thin film device of the present invention.

FIG. 8 is a sectional view showing an eighth step in the first embodiment of the method for transferring a thin film device of the present invention.

FIG. 9 is a cross-sectional view showing a ninth step in the first embodiment of the method for transferring a thin film device of the present invention.

FIG. 10 is a diagram showing a change in transmittance of a first substrate (substrate 100 in FIG. 1) with respect to the wavelength of laser light.

FIG. 11 is a cross-sectional view showing a first step for forming the thin-film device of FIG. 2;

FIG. 12 is a cross-sectional view showing a second step in the second embodiment for forming the thin-film device of FIG. 2;

FIG. 13 is a sectional view showing a third step for forming the thin film device of FIG. 2;

FIG. 14 is a sectional view showing a fourth step for forming the thin film device of FIG. 2;

FIG. 15 is a sectional view showing a fifth step for forming the thin film device of FIG. 2;

FIG. 16 is a sectional view showing a sixth step for forming the thin film device of FIG. 2;

FIG. 17 is a sectional view showing a seventh step for forming the thin film device of FIG. 2;

FIG. 18 is a sectional view of an eighth step for explaining the step of FIG. 3 with a specific structure.

FIG. 19 is a sectional view of a ninth step for explaining the step of FIG. 4 with a specific structure;

FIG. 20 is a tenth step of explaining the step of FIG. 5 with a specific structure;
It is sectional drawing of the process of FIG.

FIG. 21 is an eleventh step for explaining the step of FIG. 6 with a specific structure;
It is sectional drawing of the process of FIG.

FIG. 22 is a twelfth step for explaining the step of FIG. 7 using a specific structure;
It is sectional drawing of the process of FIG.

FIG. 23 is a thirteenth embodiment of the process shown in FIG.
It is sectional drawing of the process of FIG.

FIG. 24 is a fourteenth example illustrating the process of FIG. 9 with a specific structure;
It is sectional drawing of the process of FIG.

FIGS. 25A and 25B are perspective views of a microcomputer according to a second embodiment manufactured using the present invention.

FIG. 26 is a diagram illustrating a configuration of a liquid crystal display device according to a third embodiment of the present invention.

FIG. 27 is a diagram showing a cross-sectional structure of a main part of the liquid crystal display device of FIG. 26;

28 is a diagram for explaining a configuration of a main part of the liquid crystal display device of FIG. 26.

FIG. 29 is a cross-sectional view of a device showing a first step in a method for manufacturing an active matrix substrate using the present invention.

FIG. 30 is a cross-sectional view of a device showing a second step in the method of manufacturing an active matrix substrate using the present invention.

FIG. 31 is a cross-sectional view of a device showing a third step in the method for manufacturing an active matrix substrate using the present invention.

FIG. 32 is a cross-sectional view of a device showing a fourth step in the method of manufacturing an active matrix substrate using the present invention.

FIG. 33 is a cross-sectional view of a device showing a fifth step of the method for manufacturing an active matrix substrate using the present invention.

FIG. 34 is a cross-sectional view of a device showing a fifth step of the method for manufacturing an active matrix substrate using the present invention.

FIG. 35 is a diagram illustrating a fourth embodiment of the method for transferring a thin film device according to the present invention.

FIG. 36 is a view illustrating a fifth embodiment of the method for transferring a thin film device according to the present invention.

FIG. 37 is a view for explaining a first light irradiation step in the sixth embodiment of the method for transferring a thin film device of the present invention.

FIG. 38 is a view for explaining a second light irradiation step in the sixth embodiment of the method for transferring a thin film device of the present invention.

FIG. 39 is a configuration diagram of a coating film forming apparatus used in the first embodiment of the present invention.

FIG. 40 is a configuration diagram of another coating film forming apparatus used in the first embodiment of the present invention.

FIG. 41 is a configuration diagram of an in-line type coating film forming apparatus used in the first embodiment of the present invention.

FIG. 42 is a configuration diagram of another in-line type coating film forming apparatus used in the first embodiment of the present invention.

FIG. 43 is a configuration diagram of a coated silicon film forming apparatus used in the first embodiment of the present invention.

FIG. 44 is a configuration diagram of another coated silicon film forming apparatus used in the first embodiment of the present invention.

FIG. 45 is a flowchart illustrating a method of metal plating on the surface of a coated ITO film.

FIG. 46 is a configuration diagram of a liquid application device used in the first embodiment of the present invention.

FIG. 47 is a schematic explanatory view showing a state after spin coating in the liquid coating apparatus of FIG. 46;

FIG. 48 is a configuration diagram of another liquid application device according to the present invention.

FIG. 49 is a partially enlarged view of the liquid application device shown in FIG. 48.

50 is a partially enlarged view of the liquid application device shown in FIG.

[Explanation of symbols]

100, 3000 substrate 120, 3100 First separation layer 140, 1000-1700 Transfer receiving layer (thin film device layer) 160, 1800 Second separation layer 180, 1900 Primary transfer body 190, 2000 Adhesive layer 200, 2100 Secondary transfer layer

Claims (8)

[Claims] A first step of forming a separation layer on a substrate; a second step of forming a transfer layer including a thin film device including a plurality of thin films on the separation layer; and a transfer on the transfer layer. A third step of joining the body, and a fourth step of removing the substrate from the transfer layer at the boundary of the separation layer and transferring the transfer layer to the transfer body, The thin film device, wherein the plurality of thin films constituting the device and at least one thin film of the separation layer are formed by using a liquid phase process in which a liquid containing a component of the thin film is applied and then solidified. Transfer method. 2. A thin film device transferred to the transfer body using the transfer method according to claim 1. 3. A first step of forming a first separation layer on a substrate; a second step of forming a transfer layer including a thin film device including a plurality of thin films on the first separation layer; A third step of forming a second separation layer on the layer, a fourth step of bonding a primary transfer member on the second separation layer, and the substrate from the transferred layer with the first separation layer as a boundary. A sixth step of bonding a secondary transfer member under the layer to be transferred; and removing the primary transfer member from the layer to be transferred with the second separation layer as a boundary. A seventh step of transferring the transferred layer to the secondary transfer body, wherein the plurality of thin films constituting the thin film device and at least one thin film of the first and second separation layers, Forming the liquid using a liquid phase process in which a liquid containing the components of the thin film is applied and then solidified. Method for transferring a thin film device according to symptoms. 4. A thin film device which is transferred to the secondary transfer member by using the transfer method according to claim 3. 5. A thin film integrated circuit device comprising the thin film device according to claim 2. Description: 6. An active matrix substrate comprising a pixel portion including thin film transistors (TFTs) arranged in a matrix and a pixel electrode connected to one end of the thin film transistor. An active matrix substrate, wherein the thin-film device according to claim 1 is formed including a thin-film transistor of the pixel portion and transferred. 7. A liquid crystal display device comprising the active matrix substrate according to claim 6. 8. An electronic apparatus comprising the thin-film device according to claim 2.