JP4619645B2 - Thin film element transfer method - Google Patents

Description

The present invention relates to a transfer how thin-film devices.

  For example, when manufacturing a liquid crystal display using a thin film transistor (TFT), a process of forming a thin film transistor on a substrate by CVD or the like is performed. Since the process of forming the thin film transistor on the substrate involves a high temperature treatment, the substrate must be made of a material having excellent heat resistance, that is, a material having a high softening point and a high melting point. Therefore, at present, quartz glass is used as a substrate that can withstand a temperature of about 1000 ° C., and heat-resistant glass is used as a substrate that can withstand a temperature of around 500 ° C.

  As described above, the substrate on which the thin film elements are mounted must satisfy the conditions for manufacturing those thin film elements. That is, the substrate to be used is determined so as to satisfy the manufacturing conditions of the mounted device.

  However, when attention is paid only to the stage after the completion of the substrate on which the thin film element such as TFT is mounted, the above-mentioned “substrate” may not always be preferable.

  For example, as described above, a quartz substrate, a heat-resistant glass substrate, or the like is used when a manufacturing process involving high-temperature processing is performed, but these are very expensive, and thus increase the product price.

  Further, the glass substrate is heavy and has a property of being easily broken. In liquid crystal displays used in portable electronic devices such as palmtop computers and mobile phones, it is desirable to be as cheap and light as possible, to withstand some deformation, and to be hard to break even if dropped. The glass substrate is usually heavy, weak against deformation, and may be destroyed by dropping.

  In other words, there is a groove between the constraints resulting from the manufacturing conditions and the desirable characteristics required for the product, and it has been extremely difficult to satisfy both conditions and characteristics.

  The present invention has been made paying attention to such problems, and one of the purposes thereof is a substrate used in manufacturing a thin film element and a substrate used in actual use of a product (from the viewpoint of use of a product). It is an object of the present invention to provide a novel technique that makes it possible to independently and freely select a substrate having favorable properties.

  The present invention for solving the above-described problems has the following configuration.

(1) One embodiment of the present invention is a method of transferring a thin film element on a light-transmitting substrate onto a transfer body,
Forming a separation layer on the translucent substrate;
Forming a transfer layer including a thin film transistor which is a thin film element on the separation layer;
Bonding a transfer layer including the thin film element to the transfer body via an adhesive layer;
The separation layer is irradiated with light from the translucent substrate side to cause peeling in the layer and / or interface of the separation layer, and the translucent substrate is detached from the transferred layer. Transferring the thin film element to the transfer body,
A plurality of transfer layers having different levels of design rules for thin film elements are transferred onto the transfer body.
That is, for example, a separation layer having a property of absorbing light is provided on a light- transmitting substrate having high reliability in device manufacturing , and a thin film element that is a TFT is formed on the substrate. Next, although not particularly limited, for example, a thin film element is bonded to a desired transfer body via an adhesive layer, and then the separation layer is irradiated with light from the light- transmitting substrate side , thereby peeling off the separation layer. A phenomenon is caused to reduce the adhesion between the separation layer and the substrate. Then, a force is applied to the substrate to release the substrate from the thin film element. Thereby, a desired and highly reliable device can be transferred (formed) to any transfer body.
Here, for example, when a plurality of different types of circuits (including functional blocks, etc.) are mounted on one substrate, the elements and wiring used for each circuit according to the characteristics required for each circuit May have different sizes (design rules, or so-called design rules). Even in such a case, if the transfer is executed for each circuit using the transfer method of the present invention, a plurality of circuits having different design rule levels can be realized on one substrate.
In the present invention, the step of bonding the thin film element (the layer to be transferred including the thin film element) to the transfer body via the adhesive layer and the step of releasing the substrate from the thin film element do not matter in any order. It does n’t matter if you go ahead. However, when there is a problem with the handling of the thin film element (the transferred layer including the thin film element) after the substrate is detached, it is desirable to first bond the thin film element to the transfer body and then remove the substrate. .
Further, as a bonding layer used for bonding the thin film element to the transfer body, for example, if a material having a flattening action (for example, a thermosetting resin) is used, a slight step is formed on the surface of the transferred layer including the thin film element. Even if this occurs, the level difference is flattened and can be ignored. Therefore, it is possible to always join the transfer body satisfactorily, which is convenient.
(2) In one aspect of the present invention, the method may further include a step of removing the separation layer attached to the transfer body.
The unnecessary separation layer is completely removed.
(3) In one aspect of the present invention, the transfer body can be a transparent substrate.
For example, an inexpensive substrate such as a soda glass substrate or a flexible transparent plastic film can be used as the transfer body.
(4) In one aspect of the present invention, the transfer member, when the maximum temperature during the formation of the transfer layer was T _max, construction glass transition point (Tg) or softening point in the T _max following materials can do.
An inexpensive glass substrate or the like that cannot withstand the maximum temperature at the time of device manufacture and could not be used conventionally can be freely used.
(5) In one aspect of the present invention, the transfer body may have a glass transition point (Tg) or a softening point equal to or lower than the maximum temperature of the thin film element formation process.
It defines the upper limit of the glass transition point (Tg) or softening point.
(6) In 1 aspect of this invention, the said transfer body can be comprised with a synthetic resin or a glass material.
For example, if a thin film element is transferred to a synthetic resin plate having flexibility (flexibility) such as a plastic film, excellent characteristics that cannot be obtained with a glass substrate having high rigidity can be realized. When the present invention is applied to a liquid crystal display device, a flexible, light and resistant drop device is realized.
Further, for example, an inexpensive substrate such as a soda glass substrate can be used as the transfer body. Soda glass substrates are inexpensive and economically advantageous. The soda glass substrate has a problem that an alkali component is eluted by heat treatment during the manufacture of the TFT, and conventionally, it has been difficult to apply it to an active matrix type liquid crystal display device. However, according to the present invention, since the already completed thin film device is transferred, the problems associated with the heat treatment described above are eliminated. Therefore, in the field of the active matrix type liquid crystal display device, a substrate having a conventional problem such as a soda glass substrate can be used.
(7) In one embodiment of the present invention, the substrate can have heat resistance.
A desired high-temperature treatment can be performed at the time of manufacturing the thin film device, and a highly reliable thin film device with high performance can be manufactured.
(8) In one embodiment of the present invention, the substrate can be made of a material having a strain point _{equal to} or higher than _Tmax, where _Tmax is a maximum temperature in forming the transfer layer.
A desired high-temperature treatment can be performed at the time of manufacturing the thin film device, and a highly reliable thin film device with high performance can be manufactured.
(9) In one aspect of the present invention, the separation layer can be made of amorphous silicon.
Amorphous silicon absorbs light, is easy to manufacture, and is highly practical.
(10) In one embodiment of the present invention, the amorphous silicon can contain 2 atomic% or more of hydrogen (H).
In the case of using amorphous silicon containing hydrogen, hydrogen is released with light irradiation, thereby generating an internal pressure in the separation layer, which has an effect of promoting separation in the separation layer.
(11) In one embodiment of the present invention, the amorphous silicon can contain 10 atomic% or more of hydrogen (H).
By increasing the hydrogen content, the effect of promoting separation in the separation layer becomes more remarkable.
(12) In one embodiment of the present invention, the separation layer can be formed of silicon nitride.
When silicon nitride is used for the separation layer, nitrogen is released with light irradiation, which promotes peeling in the separation layer.
(13) In one embodiment of the present invention, the separation layer can be formed of a hydrogen-containing alloy.
When a hydrogen-containing alloy is used as the separation layer, hydrogen is released with light irradiation, and this promotes separation in the separation layer.
(14) In one embodiment of the present invention, the separation layer can be formed of a nitrogen-containing alloy.
When a nitrogen-containing alloy is used as the separation layer, nitrogen is released with light irradiation, and this promotes peeling in the separation layer.
( 15 ) Another aspect of the present invention is a thin film element that is transferred to the transfer body using any of the transfer methods described above.
The thin film element is formed on an arbitrary substrate using the thin film element transfer technique (transfer technique of a thin film structure) of the present invention.
( 16 ) Still another embodiment of the present invention is a thin film integrated circuit device including a thin film element transferred to the transfer body using any one of the transfer methods described above.
For example, a single chip microcomputer or the like configured using a thin film transistor (TFT) can be mounted on a synthetic resin substrate.
( 17 ) Still another aspect of the present invention is an active matrix substrate in which a pixel portion is configured to include thin film transistors (TFTs) arranged in a matrix and a pixel electrode connected to one end of the thin film transistor. ,
An active matrix substrate manufactured by transferring the thin film transistor of the pixel portion using any one of the above methods.
This is an active matrix substrate in which a pixel portion is formed on a desired substrate by using the thin film element transfer technology (thin film structure transfer technology) of the present invention. Since the substrate can be freely selected without restrictions imposed by the manufacturing conditions, it is possible to realize a novel active matrix substrate that has not existed before.
( 18 ) Still another embodiment of the present invention is a liquid crystal display device manufactured using the above active matrix substrate.
For example, a liquid crystal display device using a plastic substrate and having a flexible bending property can be realized.

  Next, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIGS. 1-6 is a figure for demonstrating the 1st Embodiment (transfer method of a thin film element) of this invention.

(Process 1)
As shown in FIG. 1, a separation layer (light absorption layer) 120 is formed on a substrate 100.

  Hereinafter, the substrate 100 and the separation layer 120 will be described.

(1) Description of Substrate 100 The substrate 100 preferably has translucency through which light can pass.

  In this case, the light transmittance is preferably 10% or more, and more preferably 50% or more. If this transmittance is too low, the attenuation (loss) of light increases, and a larger amount of light is required to peel off the separation layer 120.

  The substrate 100 is preferably made of a highly reliable material, and particularly preferably made of a material having excellent heat resistance. The reason is that, for example, when forming the transfer layer 140 and the intermediate layer 142 described later, the process temperature may be high (for example, about 350 to 1000 ° C.) depending on the type and formation method. This is because if the substrate 100 is excellent in heat resistance, the range of setting of film forming conditions such as the temperature condition is widened when forming the transferred layer 140 or the like on the substrate 100.

  Accordingly, the substrate 100 is preferably made of a material having a strain point equal to or higher than Tmax, where Tmax is the maximum temperature when the transfer layer 140 is formed. Specifically, the constituent material of the substrate 100 preferably has a strain point of 350 ° C. or higher, and more preferably 500 ° C. or higher. As such a thing, heat resistant glass, such as quartz glass, Corning 7059, Nippon Electric Glass OA-2, is mentioned, for example.

  Further, the thickness of the substrate 100 is not particularly limited, but is usually preferably about 0.1 to 5.0 mm, and more preferably about 0.5 to 1.5 mm. If the thickness of the substrate 100 is too thin, the strength is reduced, and if it is too thick, light attenuation tends to occur when the transmittance of the substrate 100 is low. When the light transmittance of the substrate 100 is high, the thickness thereof may exceed the upper limit value. Note that the thickness of the substrate 100 is preferably uniform so that light can be uniformly irradiated.

(2) Description of Separation Layer 120 The separation layer 120 absorbs irradiated light, and causes peeling (hereinafter referred to as “in-layer peeling” or “interface peeling”) within the layer and / or at the interface. Preferably, the bonding force between atoms or molecules of the substance constituting the separation layer 120 disappears or decreases due to light irradiation, that is, ablation occurs and delamination and / or What leads to interface peeling is good.

  Furthermore, the gas may be released from the separation layer 120 by light irradiation, and the separation effect may be exhibited. That is, there are a case where the component contained in the separation layer 120 is released as a gas, and a case where the separation layer 120 absorbs light and becomes a gas for a moment, and its vapor is emitted, contributing to the separation. . Examples of the composition of the separation layer 120 include those described in the following A to E.

A. Amorphous silicon (a-Si)
This amorphous silicon may contain hydrogen (H). In this case, the content of H is preferably about 2 atomic% or more, and more preferably about 2 to 20 atomic%. Thus, when a predetermined amount of hydrogen (H) is contained, hydrogen is released by light irradiation, and an internal pressure is generated in the separation layer 120, which becomes a force for peeling the upper and lower thin films. The content of hydrogen (H) in the amorphous silicon is adjusted by appropriately setting film forming conditions such as gas composition, gas pressure, gas atmosphere, gas flow rate, temperature, substrate temperature, and input power in CVD. be able to.

B. Various oxide ceramics such as silicon oxide or silicate compound, titanium oxide or titanate compound, zirconium oxide or zirconate compound, lanthanum oxide or lanthanum oxide compound, electrical conductor (ferroelectric material) or semiconductor , SiO ₂ and Si ₃ O ₂ , and examples of the silicate compound include K ₂ SiO ₃ , Li ₂ SiO ₃ , CaSiO ₃ , ZrSiO ₄ , and Na ₂ SiO ₃ .

Titanium _{oxide, TiO, Ti 2 0 3,} Ti0 2 , and examples of titanate compounds, for _{example, BaTi0 4, BaTiO 3, Ba} 2 Ti 9 O 20, BaTi 5 O 11, CaTiO 3, SrTiO 3, PbTiO ₃ , MgTiO ₃ , ZrTiO ₂ , SnTiO ₄ , Al ₂ TiO ₅ , FeTiO ₃ may be mentioned.

Examples of the zirconium oxide include ZrO ₂ , and examples of the zirconate compound include BaZrO ₃ , ZrSiO ₄ , PbZrO ₃ , MgZrO ₃ , and K ₂ ZrO ₃ .

C. Ceramics or dielectrics such as PZT, PLZT, PLLZT, PBZT (ferroelectric)
D. Nitride ceramics such as silicon nitride, aluminum nitride, titanium nitride E. Organic polymer materials Organic polymer materials include -CH-, -CO- (ketone), -CONH- (amide), -NH- (imide), -COO- (ester), -N = N- (azo ), A bond having a bond such as —CH═N— (Schiff) (these bonds are cleaved by light irradiation), particularly any one having a large number of these bonds. The organic polymer material may have an aromatic hydrocarbon (one or more benzene rings or condensed rings thereof) in the structural formula.

  Specific examples of such organic polymer materials include polyolefins such as polyethylene and polypropylene, polyimide, polyamide, polyester, polymethyl methacrylate (PMMA), polyphenylene sulfide (PPS), polyethersulfone (PES), epoxy resin, and the like. Can be given.

F. Examples of the metal include Al, Li, Ti, Mn, In, Sn, Y, La, Ce, Nd, Pr, Gd, Sm, or an alloy containing at least one of them.

  The thickness of the separation layer 120 varies depending on various conditions such as the purpose of peeling, the composition of the separation layer 120, the layer structure, and the formation method, but it is usually preferably about 1 nm to 20 μm, and about 10 nm to 2 μm. More preferably, it is about 40 nm to 1 μm. If the thickness of the separation layer 120 is too small, the uniformity of film formation may be impaired, and peeling may be uneven. If the thickness is too thick, good separation of the separation layer 120 is ensured. In addition, it is necessary to increase the light power (light quantity), and it takes time to remove the separation layer 120 later. Note that the thickness of the separation layer 120 is preferably as uniform as possible.

  The formation method of the separation layer 120 is not particularly limited, and is appropriately selected according to various conditions such as a film composition and a film thickness. For example, CVD (including MOCVD, low pressure CVD, ECR-CVD), vapor deposition, molecular beam vapor deposition (MB), sputtering, ion plating, PVD and other various vapor deposition methods, electroplating, immersion plating (dipping), Various plating methods such as electroless plating, Langmuir Projet (LB) method, spin coating, spray coating, roll coating and other coating methods, various printing methods, transfer methods, ink jet methods, powder jet methods, etc. Two or more of them can be combined to form.

  For example, when the composition of the separation layer 120 is amorphous silicon (a-Si), it is preferable to form the film by CVD, particularly low-pressure CVD or plasma CVD.

  In the case where the separation layer 120 is made of a sol-gel ceramic or an organic polymer material, it is preferable to form the film by a coating method, particularly spin coating.

(Process 2)
Next, as illustrated in FIG. 2, a transfer layer (thin film device layer) 140 is formed on the separation layer 120.

An enlarged cross-sectional view of a portion K of the thin film device layer 140 (a portion surrounded by a one-dot chain line in FIG. 2) is shown on the right side of FIG. As shown in the figure, the thin film device layer 140 includes, for example, a TFT (thin film transistor) formed on a SiO ₂ film (intermediate layer) 142, and this TFT introduces an n-type impurity into the polysilicon layer. The source / drain layer 146, the channel layer 144, the gate insulating film 148, the gate electrode 150, the interlayer insulating film 154, and the electrode 152 made of, for example, aluminum are formed.

In this embodiment, the use of the Si0 ₂ film as an intermediate layer provided in contact with the separation layer 120, it is also possible to use other insulating film such as Si ₃ N _4. The thickness of the Si0 ₂ film (intermediate layer) is appropriately determined in accordance with the degree of its formation purpose and exhibit and can function normally is preferably in the range of about 10 nm to 5 [mu] m, it is about 40nm~1μm of Is more preferable. The intermediate layer is formed for various purposes, for example, a protective layer that physically or chemically protects the transferred layer 140, an insulating layer, a conductive layer, a laser light shielding layer, a migration-preventing barrier layer, or a reflective layer. That exhibit at least one of these functions.

In some cases, Si0 without forming an intermediate layer of ₂ film or the like, the transfer layer directly on the separation layer 120 (thin film device layer) 140 may be formed.

  The transferred layer 140 (thin film device layer) is a layer including a thin film element such as a TFT as shown on the right side of FIG.

  As the thin film element, in addition to the TFT, for example, a thin film diode, a photoelectric conversion element (photosensor, solar cell) made of a silicon PIN junction, a silicon resistance element, other thin film semiconductor devices, electrodes (eg, ITO, mesa) Transparent electrodes such as films), actuators such as switching elements, memories, piezoelectric elements, micromirrors (piezo thin film ceramics), magnetic recording thin film heads, coils, inductors, thin film highly magnetically permeable materials, and micromagnetic devices combining them, There are filters, reflective films, dichroic mirrors, etc.

  Such a thin film element (thin film device) is usually formed through a relatively high process temperature in relation to its formation method. Therefore, in this case, as described above, the substrate 100 needs to have a high reliability that can withstand the process temperature.

(Process 3)
Next, as shown in FIG. 3, the thin film device layer 140 is bonded (adhered) to the transfer body 180 via the adhesive layer 160.

  Preferable examples of the adhesive constituting the adhesive layer 160 include various curable types such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic curable adhesive. An adhesive is mentioned. The composition of the adhesive may be any, for example, epoxy, acrylate, or silicone. The adhesive layer 160 is formed by, for example, a coating method.

  In the case of using the curable adhesive, for example, a curable adhesive is applied on the transfer layer (thin film device layer) 140, and the transfer body 180 is bonded thereon, followed by curing according to the characteristics of the curable adhesive. The curable adhesive is cured by a method, and the transfer target layer (thin film device layer) 140 and the transfer body 180 are bonded and fixed.

  When the adhesive is a photo-curing type, light is irradiated from the outside of one of the light-transmitting substrate 100 and the light-transmitting transfer body 180 (or from both the outside of the light-transmitting substrate and the transfer body). As the adhesive, a light curable adhesive such as an ultraviolet curable adhesive that does not easily affect the thin film device layer is preferable.

  Unlike the illustration, an adhesive layer 160 may be formed on the transfer body 180 side, and a transfer target layer (thin film device layer) 140 may be adhered thereon. For example, when the transfer body 180 itself has an adhesive function, the formation of the adhesive layer 160 may be omitted.

  Although it does not specifically limit as the transfer body 180, A board | substrate (plate material), especially a transparent substrate are mentioned. Such a substrate may be a flat plate or a curved plate.

  Further, the transfer body 180 may be inferior to the substrate 100 in characteristics such as heat resistance and corrosion resistance. The reason for this is that in the present invention, a transfer layer (thin film device layer) 140 is formed on the substrate 100 side, and then the transfer layer (thin film device layer) 140 is transferred to the transfer body 180. This is because the properties, particularly heat resistance, do not depend on the temperature condition or the like when forming the transferred layer (thin film device layer) 140.

  Therefore, when the maximum temperature in forming the transfer layer 140 is Tmax, a material having a glass transition point (Tg) or a softening point equal to or lower than Tmax can be used as a constituent material of the transfer body 0. For example, the transfer body 180 can be made of a material having a glass transition point (Tg) or a softening point of preferably 800 ° C. or lower, more preferably 500 ° C. or lower, and further preferably 320 ° C. or lower.

  Further, the mechanical properties of the transfer body 180 are preferably those having a certain degree of rigidity (strength), but may also be flexible and elastic.

  Examples of the constituent material of the transfer body 180 include various synthetic resins or various glass materials, and various synthetic resins and normal (low melting point) inexpensive glass materials are particularly preferable.

  The synthetic resin may be either a thermoplastic resin or a thermosetting resin. For example, polyolefin such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), cyclic polyolefin, modified Polyolefin, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, polyimide, polyamideimide, polycarbonate, poly- (4-methylbenten-1), ionomer, acrylic resin, polymethyl methacrylate, acrylic-styrene copolymer (AS Resin), butadiene-styrene copolymer, polio copolymer (EVOH), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyester such as precyclohexane terephthalate (PCT), poly Ether, polyetherketone (PEK), polyetheretherketone (PEEK), polyetherimide, polyacetal (POM), polyphenylene oxide, modified polyphenylene oxide, polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyfluoride Various types of thermoplastic elastomers such as vinylidene fluoride, other fluororesins, styrene, polyolefin, polyvinyl chloride, polyurethane, fluororubber, chlorinated polyethylene, epoxy resin, phenol resin, urea resin, melamine resin, Saturated polyesters, silicone resins, polyurethanes, etc., or copolymers, blends, polymer alloys, etc. mainly composed of these, may be mentioned, and one or more of these may be combined (for example, two layers) As a laminate of the upper) it can be used.

  Examples of the glass material include silicate glass (quartz glass), alkali silicate glass, soda lime glass, potash lime glass, lead (alkali) glass, barium glass, borosilicate glass, and the like. Of these, glass other than silicate glass is preferable because it has a lower melting point than silicate glass, is relatively easy to mold and process, and is inexpensive.

  When the transfer body 180 made of synthetic resin is used, the large transfer body 180 can be integrally formed, and even a complicated shape such as a curved surface or an uneven surface can be easily formed. In addition, various advantages such as low material cost and low manufacturing cost can be obtained. Therefore, the use of a synthetic resin is advantageous in manufacturing a large and inexpensive device (for example, a liquid crystal display).

  The transfer body 180 is a part of a device such as a liquid crystal cell that constitutes an independent device, such as a color filter, an electrode layer, a dielectric layer, an insulating layer, or a semiconductor element. May be included.

  Further, the transfer body 180 may be a substance such as metal, ceramics, stone, or wood paper, or on an arbitrary surface constituting a certain item (on a watch surface, on an air conditioner surface, on a printed circuit board, etc.). ), Or on the surface of a structure such as a wall, pillar, ceiling, or window glass.

(Process 4)
Next, as shown in FIG. 4, light is irradiated from the back side of the substrate 100.
This light is applied to the separation layer 120 after passing through the substrate 100. Thereby, in-layer peeling and / or interface peeling occurs in the separation layer 120, and the bonding force is reduced or disappears.

  The principle that separation and / or interfacial separation occurs in the separation layer 120 is that the constituent material of the separation layer 120 is ablated, the gas contained in the separation layer 120 is released, and the melting that occurs immediately after irradiation is performed. It is estimated that this is due to phase change such as transpiration.

  Here, the ablation means that the fixing material that absorbs the irradiation light (the constituent material of the separation layer 120) is excited photochemically or thermally, and the bonds of atoms or molecules inside the surface or inside are cut and released. In general, all or part of the constituent material of the separation layer 120 appears as a phenomenon that causes a phase change such as melting or transpiration (vaporization). In addition, the phase change may result in a minute firing state, which may reduce the binding force.

  Whether the separation layer 120 causes in-layer separation, interfacial separation, or both depends on the composition of the separation layer 120 and various other factors, and one of the factors is irradiation. Conditions such as the type of light, wavelength, intensity, and reaching depth are included.

  The light to be irradiated may be any light as long as it causes the separation layer 120 to undergo in-layer separation and / or interfacial separation. For example, X-ray, ultraviolet light, visible light, infrared light (heat ray), laser light, millimeter wave , Microwave, electron beam, radiation (α ray, β ray, γ ray) and the like. Among these, a laser beam is preferable in that it easily causes separation (ablation) of the separation layer 120.

Examples of the laser device that generates the laser light include various gas lasers, solid lasers (semiconductor lasers), and the like. Excimer lasers, Nd-YAG lasers, Ar lasers, CO ₂ lasers, CO lasers, He-Ne lasers, and the like. Are preferably used, and an excimer laser is particularly preferable among them.

  Since the excimer laser outputs high energy in a short wavelength region, it can cause ablation in the separation layer 2 in a very short time, and thus hardly causes a temperature rise in the adjacent transfer body 180 or the substrate 100. That is, the separation layer 120 can be peeled without causing deterioration or damage.

  In addition, when ablation is caused in the separation layer 120, the wavelength of the irradiated laser light is preferably about 100 nm to 350 nm when there is a wavelength dependency of light.

  FIG. 7 shows an example of the transmittance of the substrate 100 with respect to the wavelength of light. As shown in the figure, the transmittance sharply increases with respect to a wavelength of 300 nm. In such a case, light with a wavelength of 300 nm or more (for example, Xe-Cl excimer laser light with a wavelength of 308 nm) is irradiated.

  Further, when the separation layer 120 is given a separation characteristic by causing a phase change such as outgassing, vaporization, and sublimation, the wavelength of the irradiated laser light is preferably about 350 to 1200 nm.

In addition, the energy density of the laser beam irradiated, particularly the energy density in the case of the excimer laser is preferably set to 10~5000mJ / cm ² or so, and more preferably, 100 to 500 mJ / cm ² or so. The irradiation time is preferably about 1 to 1000 nsec, more preferably about 10 to 100 nsec. When the energy density is low or the irradiation time is short, sufficient ablation or the like does not occur, and when the energy density is high or the irradiation time is long, the transferred layer 140 is adversely affected by the irradiation light transmitted through the separation layer 120. There is a risk.

  As a countermeasure when the irradiation light transmitted through the separation layer 120 reaches the transferred layer 140 and has an adverse effect, for example, as shown in FIG. 30, tantalum (Ta) is formed on the separation layer (laser absorption layer) 120. Or the like. Thereby, the laser light transmitted through the separation layer 120 is completely reflected at the interface of the metal film 124 and does not adversely affect the thin film element above it.

  Irradiation light represented by laser light is preferably irradiated so that its intensity is uniform. The irradiation direction of the irradiation light is not limited to the direction perpendicular to the separation layer 120 and may be a direction inclined by a predetermined angle with respect to the separation layer 120.

  Further, when the area of the separation layer 120 is larger than the irradiation area of one irradiation light, the entire area of the separation layer 120 can be irradiated with irradiation light in a plurality of times. Moreover, you may irradiate the same location twice or more. Further, irradiation light (laser light) of different types and different wavelengths (wavelength regions) may be irradiated twice or more to the same region or different regions.

  Next, as shown in FIG. 5, a force is applied to the substrate 100 to release the substrate 100 from the separation layer 120. Although not shown in FIG. 5, a separation layer may adhere on the substrate 100 after the separation.

  Next, as shown in FIG. 6, the remaining separation layer 120 is removed by a method such as cleaning, etching, ashing, polishing, or a combination thereof. As a result, the transferred layer (thin film device layer) 140 is transferred to the transfer body 180.

  If a part of the separation layer is attached to the detached substrate 100, it is removed in the same manner. When the substrate 100 is made of an expensive material such as quartz glass or a rare material, the substrate 100 is preferably used for recycling (recycling). That is, the present invention can be applied to the substrate 100 to be reused, and is highly useful.

Through the above steps, the transfer of the transfer target layer (thin film device layer) 140 to the transfer body 180 is completed. Thereafter, removal of the SiO ₂ film adjacent to the transferred layer (thin film device layer) 140, formation of a conductive layer such as wiring on the transferred layer 140, or a desired protective film can be performed.

  In the present invention, the layer to be transferred (thin film device layer) 140 itself, which is the object to be peeled, is not peeled directly, but is peeled off at the separation layer bonded to the layer to be transferred (thin film device layer) 140. Regardless of the characteristics, conditions, etc. of the object (transfer target layer 140), it can be peeled (transferred) easily, reliably and uniformly, and damage to the object (transfer target layer 140) due to the peeling operation is also possible. Therefore, the high reliability of the transferred layer 140 can be maintained.

(Second Embodiment)
An example of a specific manufacturing process when a TFT having a CMOS structure is formed on a substrate and transferred to a transfer body will be described with reference to FIGS.

(Process 1)
As shown in FIG. 8, on a substrate (for example, a quartz substrate) 100, a separation layer (for example, an amorphous silicon layer formed by LPCVD) 120, an intermediate layer (for example, SiO ₂ film) 142, and amorphous silicon A layer (for example, formed by the LPCVD method) 143 is sequentially stacked, and then the entire surface of the amorphous silicon layer 143 is irradiated with laser light from above and annealed. Thereby, the amorphous silicon layer 143 is recrystallized to become a polysilicon layer.
(Process 2)
Subsequently, as shown in FIG. 9, the polysilicon layer obtained by laser annealing is patterned to form islands 144a and 144b.
(Process 3)
As shown in FIG. 10, gate insulating films 148a and 148b covering the islands 144a and 144b are formed by, for example, a CVD method.
(Process 4)
As shown in FIG. 11, gate electrodes 150a and 150b made of polysilicon or metal are formed.
(Process 5)
As shown in FIG. 12, a mask layer 170 made of polyimide or the like is formed, and, for example, boron (B) ions are implanted by self-alignment using the gate electrode 150b and the mask layer 170 as a mask. As a result, p ⁺ layers 172a and 172b are formed.
(Step 6) As shown in FIG. 13, a mask layer 174 made of polyimide or the like is formed, and, for example, phosphorus (P) ions are implanted by self-alignment using the gate electrode 150a and the mask layer 174 as a mask. As a result, n ⁺ layers 146a and 146b are formed.
(Step 7) As shown in FIG. 14, an interlayer insulating film 154 is formed, and after selectively forming contact holes, electrodes 152a to 152d are formed.
The TFT having the CMOS structure formed in this manner corresponds to the transferred layer (thin film device layer) 140 in FIGS. Note that a protective film may be formed over the interlayer insulating film 154.
(Process 8)
As shown in FIG. 15, an epoxy resin layer 160 as an adhesive layer is formed on a TFT having a CMOS structure, and then the TFT is transferred to a transfer body (for example, soda glass substrate) 180 via the epoxy resin layer 160. paste. Subsequently, heat is applied to cure the epoxy resin, and the transfer body 180 and the TFT are bonded (bonded). The adhesive layer 160 may be a photopolymer resin that is an ultraviolet curable adhesive. In this case, the polymer is cured by irradiating ultraviolet rays not from heat but from the transfer member 180 side.
(Step 9)
As shown in FIG. 16, for example, Xe—Cl excimer laser light is irradiated from the back surface of the substrate 100. This causes separation within the separation layer 120 and / or at the interface.
(Process 10)
As shown in FIG. 17, the substrate 100 is peeled off.
(Step 11)
Finally, the separation layer 120 is removed by etching. As a result, as shown in FIG. 18, the TFT having the CMOS structure is transferred to the transfer body 180.

(Third embodiment)
When the techniques described in the first and second embodiments are used, for example, a microcomputer configured using a thin film element as shown in FIG. Can be formed.

  In FIG. 19A, on a flexible substrate 182 made of plastic or the like, an amorphous circuit for supplying a power supply voltage of the CPU 300, the RAM 320, the input / output circuit 360, and these circuits in which circuits are configured using thin film elements. A solar cell 340 having a silicon PIN junction is mounted.

  Since the microcomputer shown in FIG. 19A is formed on a flexible substrate, it has a feature that it is strong against bending as shown in FIG.

(Fourth embodiment)
In this embodiment, an example of a manufacturing process in the case where an active matrix type liquid crystal display device using an active matrix substrate as shown in FIGS. 20 and 21 is produced using the above-described thin film device transfer technology. Will be described.

(Configuration of liquid crystal display device)
As shown in FIG. 20, the active matrix type liquid crystal display device includes an illumination light source 400 such as a backlight, a polarizing plate 420, an active matrix substrate 440, a liquid crystal 460, a counter substrate 480, and a polarizing plate 500.

  Note that in the case where a flexible substrate such as a plastic film is used for the active matrix substrate 440 and the counter substrate 480 of the present invention, if a reflective liquid crystal panel using a reflecting plate is used instead of the illumination light source 400, flexibility is achieved. It is possible to realize an active matrix liquid crystal panel that is strong against impact and lightweight. Note that when the pixel electrode is formed of metal, the reflector and the polarizing plate 420 are not necessary.

  An active matrix substrate 440 used in this embodiment is a driver built-in type active matrix substrate in which TFTs are arranged in the pixel portion 442 and a driver circuit (scanning line driver and data line driver) 444 is mounted.

  A cross-sectional view of the main part of the active matrix liquid crystal display device is shown in FIG. 21, and a circuit configuration of the main part of the liquid crystal display device is shown in FIG.

  As shown in FIG. 22, the pixel portion 442 includes a TFT (M1) having a gate connected to the gate line G1, one of the source and the drain connected to the data line D1, and the other of the source and the drain connected to the liquid crystal 460. ) And liquid crystal 460.

  The driver unit 444 includes a TFT (M2) formed by the same process as the TFT (M1) of the pixel unit.

  As shown on the left side of FIG. 21, the TFT (M1) in the pixel portion 442 includes source / drain layers 1100a and 1100b, a channel 1100e, a gate insulating film 1200a, a gate electrode 1300a, an insulating film 1500, and a source. A drain electrode 1400a, 1400b is included.

  Reference numeral 1700 denotes a pixel electrode, and reference numeral 1702 denotes a region where the pixel electrode 1700 applies a voltage to the liquid crystal 460 (voltage application region to the liquid crystal). In the figure, the alignment film is omitted. The pixel electrode 1700 is made of ITO (in the case of a light transmission type liquid crystal panel) or a metal such as aluminum (in the case of a reflection type liquid crystal panel). In FIG. 21, the base insulating film (intermediate layer) 1000 under the pixel electrode 1700 is completely removed in the voltage application region 1702 to the liquid crystal, but the present invention is not limited to this, and the base insulating film is not necessarily limited thereto. If the film (intermediate layer) 1000 is thin and does not hinder the application of voltage to the liquid crystal, it may be left.

  Further, as shown on the right side of FIG. 21, the TFT (M2) constituting the driver unit 444 includes source and drain layers 1100c and 1100d, a channel 1100f, a gate insulating film 1200b, a gate electrode 1300b, and an insulating film. 1500 and source / drain electrodes 1400c and 1400d.

In FIG. 21, reference numeral 480 is, for example, a counter substrate (for example, a soda glass substrate), and reference numeral 482 is a common electrode. Reference numeral 1000 is a SiO ₂ film, reference numeral 1600 is an interlayer insulating film (for example, SiO ₂ film), and reference numeral 1800 is an adhesive layer. Reference numeral 1900 is a substrate (transfer body) made of, for example, a soda glass substrate.

(Manufacturing process of liquid crystal display device)
Hereinafter, the manufacturing process of the liquid crystal display device of FIG. 21 will be described with reference to FIGS.

  First, through manufacturing processes similar to those shown in FIGS. 8 to 18, TFTs (M 1 and M 2) as shown in FIG. 23 are formed on a highly reliable substrate (for example, a quartz substrate) 3000 that transmits laser light. The protective film 1600 is configured. In FIG. 23, reference numeral 3100 denotes a separation layer (laser absorption layer). In FIG. 23, both TFTs (M1, M2) are n-type MOSFETs. However, the present invention is not limited to this, and a p-type MOSFET or a CMOS structure may be used.

  Next, as shown in FIG. 24, the protective film 1600 and the base insulating film 1000 are selectively etched, and openings 4000 and 4200 are selectively formed. These two openings are formed simultaneously using a common etching process. Note that in FIG. 24, the base insulating film (intermediate layer) 1000 is completely removed from the opening 4200; however, the present invention is not limited to this, and the liquid crystal is thin because the base insulating film (intermediate layer) 1000 is thin. It may be left if it does not interfere with voltage application.

  Next, as shown in FIG. 25, a pixel electrode 1700 made of a metal such as an ITO film or aluminum is formed. When an ITO film is used, a transmissive liquid crystal panel is obtained, and when a metal such as aluminum is used, a reflective liquid crystal panel is obtained.

  Next, as illustrated in FIG. 26, the substrate 1900 is bonded (adhered) through the adhesive layer 1800.

  Next, as shown in FIG. 26, excimer laser light is irradiated from the back surface of the substrate 3000, and then the substrate 3000 is peeled off.

Next, the separation layer (laser absorption layer) 3100 is removed. Thereby, an active matrix substrate 440 as shown in FIG. 27 is completed. The bottom surface of the pixel electrode 1700 (the region denoted by reference numeral 1702) is exposed and can be electrically connected to the liquid crystal. Thereafter, an alignment film is formed on the surface of the insulating film (intermediate layer such as SiO ₂ ) 1000 of the active matrix substrate 440 and the surface of the pixel electrode 1702 and subjected to alignment treatment. In FIG. 27, the alignment film is omitted.

  Further, a common electrode opposite to the pixel electrode 1709 is formed on the surface, and the counter substrate 480 whose surface is subjected to the orientation treatment and the active matrix substrate 440 in FIG. 21 are sealed with a sealing material (seal material), A liquid crystal is sealed between both substrates to complete a liquid crystal display device as shown in FIG.

(Fifth embodiment)
FIG. 28 shows a fifth embodiment of the present invention.

  In this embodiment, the above-described thin film device transfer method is executed a plurality of times to transfer a plurality of patterns including thin film elements onto a substrate (transfer body) larger than the transfer source substrate, and finally a large scale An active matrix substrate is formed.

  That is, transfer is performed a plurality of times on a large substrate 7000 to form the pixel portions 7100a to 7100P. As shown by the one-dot chain line on the upper side of FIG. 28, TFTs and wirings are formed in the pixel portion. In FIG. 28, reference numeral 7210 is a scanning line, reference numeral 7200 is a signal line, reference numeral 7220 is a gate electrode, and reference numeral 7230 is a pixel electrode.

  Create a large-scale active matrix substrate with highly reliable thin film elements by repeatedly using a highly reliable substrate or by transferring multiple thin film patterns using multiple first substrates. it can.

(Sixth embodiment)
A sixth embodiment of the present invention is shown in FIG.

  The present embodiment is characterized in that thin film devices having different design rules (that is, design rules for pattern design) are formed on a substrate larger than the substrate of the transfer source by executing the above-described thin film device transfer method a plurality of times. Transferring a plurality of patterns including elements (that is, thin film elements having different minimum line widths).

  In FIG. 29, driver circuits (8000 to 8032) created by a finer manufacturing process than the pixel portions (7100a to 7100p) on the driver-mounted active matrix substrate are transferred around the substrate 6000 by a plurality of times of transfer. It has been created.

  Since the shift register constituting the driver circuit operates at a logic level under a low voltage, the withstand voltage may be lower than that of the pixel TFT. Therefore, high integration can be achieved by making the TFT finer than the pixel TFT. it can.

  According to the present embodiment, a plurality of circuits having different design rule levels (that is, different manufacturing processes) can be realized on one substrate. Note that the sampling means (thin film transistor M2 in FIG. 22) for sampling the data signal under the control of the shift register needs to have a high breakdown voltage like the pixel TFT, and therefore may be formed with the same process / design rule as the pixel TFT.

〔Example〕
Next, specific examples of the present invention will be described.

Example 1
A quartz substrate (softening point: 1630 ° C., strain point: 1070 ° C., excimer laser transmittance: almost 100%) having a length of 50 mm × width of 50 mm × thickness of 1.1 mm is prepared, and a separation layer is provided on one side of the quartz substrate. As the (laser light absorption layer), an amorphous silicon (a-Si) film was formed by a low pressure CVD method (Si ₂ H ₆ gas, 425 ° C.). The thickness of the separation layer was 100 nm.

Next, an SiO ₂ film was formed as an intermediate layer on the separation layer by an ECR-CVD method (SiH ₄ + O ₂ gas, 100 ° C.). The film thickness of the intermediate layer was 200 nm.

Next, an amorphous silicon film having a thickness of 50 nm is formed as a transfer layer on the intermediate layer by a low pressure CVD method (Si ₂ H ₆ gas, 425 ° C.), and laser light (wavelength) is formed on the amorphous silicon film. 308 nm) and crystallized to obtain a polysilicon film. Thereafter, the polysilicon film was subjected to predetermined patterning to form regions serving as the source / drain / channel of the thin film transistor. Thereafter, the surface of the polysilicon film is thermally oxidized at a high temperature of 1000 ° C. or more to form a gate insulating film SiO ₂ , and then a gate electrode (a refractory metal such as Mo is stacked on the gate insulating film). The source / drain regions were formed in a self-aligned manner (self-alignment), and a thin film transistor was formed by ion implantation using the gate electrode as a mask. Thereafter, electrodes and wirings connected to the source / drain regions and wirings connected to the gate electrode are formed as necessary. Al is used for these electrodes and wirings, but is not limited thereto. Further, in the case where there is a concern about melting of Al by laser irradiation in the subsequent process, a metal having a melting point higher than that of Al (that is not melted by laser irradiation in the subsequent process) may be used.

  Next, an ultraviolet curable adhesive is applied on the thin film transistor (film thickness: 100 μm), and a large transparent glass having a length of 200 mm × width of 300 mm × thickness of 1.1 mm is applied to the coating film. After bonding the substrates (soda glass, softening point: 740 ° C., strain point: 511 ° C.), the adhesive was cured by irradiating ultraviolet rays from the glass substrate side, and these were bonded and fixed.

Next, Xe-Cl excimer laser (wavelength: 308 nm) was irradiated from the quartz substrate side to cause separation (in-layer separation and interface separation) in the separation layer. The energy density of the irradiated Xe—Cl excimer laser was 250 mJ / cm ² , and the irradiation time was 20 nsec. Excimer laser irradiation includes spot beam irradiation and line beam irradiation. In the case of spot beam irradiation, spot irradiation is performed on a predetermined unit region (for example, 8 mm × 8 mm), and this spot irradiation is 1 / of the unit region. Irradiate while shifting by about 10 steps. In the case of line beam irradiation, irradiation is performed while shifting a predetermined unit area (for example, 378 mm × 0.1 mm or 378 mm × 0.3 mm (these are areas where 90% or more of energy is obtained)) by about 1/10. I will do it. Thereby, each point of the separation layer is irradiated at least 10 times. This laser irradiation is performed while shifting the irradiation region with respect to the entire surface of the quartz substrate.

  Thereafter, the quartz substrate and the glass substrate (transfer body) were peeled off at the separation layer, and the thin film transistor and the intermediate layer formed on the quartz substrate were transferred to the glass substrate side.

  Thereafter, the separation layer attached to the surface of the intermediate layer on the glass substrate side was removed by etching, washing, or a combination thereof. Also, the same treatment was performed on the quartz substrate and it was reused.

  If the glass substrate serving as the transfer body is a substrate larger than the quartz substrate, the transfer from the quartz substrate to the glass substrate as in the present embodiment is repeatedly performed in different areas in a plane, and on the glass substrate, More thin film transistors than the number of thin film transistors that can be formed on a quartz substrate can be formed. Further, it can be repeatedly stacked on a glass substrate to form more thin film transistors.

(Example 2)
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was an amorphous silicon film containing 20 at% of H (hydrogen).

  Note that the amount of H in the amorphous silicon film was adjusted by appropriately setting conditions during film formation by the low pressure CVD method.

(Example 3)
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was a ceramic thin film (composition: PbTiO ₃ , film thickness: 200 nm) formed by a sol-gel method by spin coating.

Example 4
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was a ceramic thin film (composition: BaTiO ₃ , film thickness: 400 nm) formed by sputtering.

(Example 5)
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was a ceramic thin film (composition: Pb (Zr, Ti) O ₃ (PZT), film thickness: 50 nm) formed by laser-ablation. It was.

(Example 6)
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was a polyimide film (thickness: 200 nm) formed by spin coating.

(Example 7)
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was a polyphenylene sulfide film (film thickness: 200 nm) formed by spin coating.

(Example 8)
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was an Al layer (film thickness: 300 nm) formed by sputtering.

Example 9
The thin film transistor was transferred in the same manner as in Example 2 except that a Kr-F excimer laser (wavelength: 248 nm) was used as the irradiation light. The energy density of the irradiated laser was 250 mJ / cm ² and the irradiation time was 20 nsec.

(Example 10)
The thin film transistor was transferred in the same manner as in Example 2 except that an Nd-YAIG laser (wavelength: 1068 nm) was used as the irradiation light. The energy density of the irradiated laser was 400 mJ / cm ² and the irradiation time was 20 nsec.

(Example 11)
A thin film transistor was transferred in the same manner as in Example 1 except that a thin film transistor having a polysilicon film (film thickness: 80 nm) formed by a high temperature process of 1000 ° C. was used as the transfer layer.

(Example 12)
The thin film transistor was transferred in the same manner as in Example 1 except that a transparent substrate made of polycarbonate (glass transition point: 130 ° C.) was used as the transfer body.

(Example 13)
The thin film transistor was transferred in the same manner as in Example 2 except that a transparent substrate made of AS resin (glass transition point: 70 to 90 ° C.) was used as the transfer body.

(Example 14)
The thin film transistor was transferred in the same manner as in Example 3 except that a transparent substrate made of polymethyl methacrylate (glass transition point: 70 to 90 ° C.) was used as the transfer body.

(Example 15)
The thin film transistor was transferred in the same manner as in Example 5 except that a transparent substrate made of polyethylene terephthalate (glass transition point: 67 ° C.) was used as the transfer body.

(Example 16)
A thin film transistor was transferred in the same manner as in Example 6 except that a transparent substrate made of high-density polyethylene (glass transition point: 77 to 90 ° C.) was used as the transfer body.

(Example 17)
The thin film transistor was transferred in the same manner as in Example 9 except that a transparent substrate made of polyamide (glass transition point: 145 ° C.) was used as the transfer body.

(Example 18)
The thin film transistor was transferred in the same manner as in Example 10 except that a transparent substrate made of an epoxy resin (glass transition point: 120 ° C.) was used as the transfer body.

(Example 19)
The thin film transistor was transferred in the same manner as in Example 11 except that a transparent substrate made of polymethyl methacrylate (glass transition point: 70 to 90 ° C.) was used as the transfer body.

  In each of Examples 1 to 19, when the state of the transferred thin film transistor was visually observed with the naked eye and a microscope, there was no defect or unevenness, and the transfer was performed uniformly.

  As described above, the thin film element (transfer target layer) can be transferred to various transfer bodies by using the transfer technique of the present invention. For example, transfer to thin materials that cannot be directly formed or are not suitable for forming, materials that are easy to mold, materials that are inexpensive, or large objects that are difficult to move Can form it.

  In particular, the transfer body may be one having inferior characteristics such as heat resistance and corrosion resistance as compared with the substrate material, such as various synthetic resins and glass materials having a low melting point. Therefore, for example, when manufacturing a liquid crystal display in which a thin film transistor (especially polysilicon TFT) is formed on a transparent substrate, a quartz glass substrate having excellent heat resistance is used as the substrate, and various synthetic resins and low melting points are used as the transfer body. By using a transparent substrate made of an inexpensive and easy-to-process material such as a glass material, a large and inexpensive liquid crystal display can be easily manufactured. Such advantages are not limited to the liquid crystal display, and the same applies to the manufacture of other devices.

  In addition, while receiving the above advantages, a transfer layer such as a functional thin film is formed on a highly reliable substrate, particularly a substrate having high heat resistance such as a quartz glass substrate, and further patterned. Therefore, a highly reliable functional thin film can be formed on the transfer body regardless of the material characteristics of the transfer body.

  In addition, such a highly reliable substrate is expensive, but it can be reused, thereby reducing the manufacturing cost.

It is sectional drawing which shows the 1st process in 1st Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 2nd process in 1st Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 3rd process in 1st Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 4th process in 1st Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 5th process in 1st Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 6th process in 1st Embodiment of the transfer method of the thin film element of this invention. It is a figure which shows the change of the transmittance | permeability with respect to the wavelength of the laser beam of the 1st board | substrate (board | substrate 100 of FIG. 1). It is sectional drawing which shows the 1st process in 2nd Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 2nd process in 2nd Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 3rd process in 2nd Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 4th process in 2nd Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 5th process in 2nd Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 6th process in 2nd Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 7th process in 2nd Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 8th process in 2nd Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 9th process in 2nd Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 10th process in 2nd Embodiment of the transfer method of the thin film element of this invention. It is sectional drawing which shows the 11th process in 2nd Embodiment of the transfer method of the thin film element of this invention. (A), (b) is a perspective view of the microcomputer manufactured using this invention. It is a figure for demonstrating the structure of a liquid crystal display device. It is a figure which shows the cross-section of the principal part of a liquid crystal display device. It is a figure for demonstrating the structure of the principal part of a liquid crystal display device. It is sectional drawing of the device which shows the 1st process of the manufacturing method of the active-matrix board | substrate using this invention. It is sectional drawing of the device which shows the 2nd process of the manufacturing method of the active-matrix board | substrate using this invention. It is sectional drawing of the device which shows the 3rd process of the manufacturing method of the active-matrix board | substrate using this invention. It is sectional drawing of the device which shows the 4th process of the manufacturing method of the active-matrix board | substrate using this invention. It is sectional drawing of the device which shows the 5th process of the manufacturing method of the active matrix substrate using this invention. It is a figure for demonstrating the other example of the transfer method of the thin film element of this invention. It is a figure for demonstrating the further another example of the transfer method of the thin film element of this invention. It is a figure for demonstrating the modification of the transfer method of the thin film element of this invention.

Explanation of symbols

100 substrate, 120 amorphous silicon layer (laser absorption layer),
140 thin film device layer, 160 adhesive layer, 180 transfer body

Claims (8)

A method of manufacturing an active matrix substrate in which a thin film element on a translucent substrate is transferred to a transfer body, and a transfer layer is formed on the transfer body,
Forming a separation layer with amorphous silicon on the translucent substrate;
Forming said transferred layer including a thin film transistor is a thin film element on the separation layer,
Bonding a transfer layer including the thin film element to the transfer body via an adhesive layer;
The separation layer is irradiated with light from the translucent substrate side to cause peeling in the layer and / or interface of the separation layer, and the translucent substrate is detached from the transferred layer. Transferring the thin film element to the transfer body,
The active matrix substrate includes a pixel portion and a driver circuit including a shift register for driving the pixel portion, and the pixel portion and the shift register each include the thin film transistor,
The transfer member, when the maximum temperature during the formation of the transfer layer was T _max, the glass transition point (Tg) or softening point is constituted by the following materials the T _max,
The substrate, when the maximum temperature during the formation of the transfer layer was T _max, the strain point is constituted by the T _max or more materials,
A plurality of transfer layers having different design rule levels of thin film elements are respectively transferred from a plurality of light-transmitting substrates onto the transfer body, and the thin film transistor provided in the shift register of the driver circuit includes the pixel A method for transferring a thin film element, wherein the thin film element is produced according to a finer design rule than the thin film transistor of the portion. In claim 1,
A method for transferring a thin film element, further comprising the step of removing the separation layer attached to the active matrix substrate . In claim 1 or 2,
The method of transferring a thin film element, wherein the transfer body is a transparent substrate. In any one of Claims 1-3 ,
The method of transferring a thin film element, wherein the transfer body is made of a synthetic resin or a glass material. In any one of Claims 1-4 ,
The method for transferring a thin film element, wherein the amorphous silicon contains 2 atomic% or more of hydrogen (H). In claim 5 ,
The method for transferring a thin film element, wherein the amorphous silicon contains 10 atomic% or more of hydrogen (H). In any one of Claims 1-6 ,
The method for transferring a thin film element, wherein the separation layer is formed by CVD (Chemical Vapor Deposition). In any one of claims 1 to 7,
A method for transferring a thin film element, further comprising a step of forming an intermediate layer on the separation layer after the formation of the separation layer and before the formation of the transfer layer.

Images