JPH10318843A - Infrared ray detector and infrared ray array - Google Patents
Infrared ray detector and infrared ray arrayInfo
- Publication number
- JPH10318843A JPH10318843A JP9132263A JP13226397A JPH10318843A JP H10318843 A JPH10318843 A JP H10318843A JP 9132263 A JP9132263 A JP 9132263A JP 13226397 A JP13226397 A JP 13226397A JP H10318843 A JPH10318843 A JP H10318843A
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- Prior art keywords
- thermal resistor
- change
- temperature
- potential
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000007613 environmental effect Effects 0.000 claims description 26
- 238000003384 imaging method Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 14
- 230000007423 decrease Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、温度によって抵
抗が変化するような材料を使った感熱抵抗体で入射赤外
線を検知する赤外線検出器に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared detector for detecting incident infrared rays with a thermal resistor using a material whose resistance changes with temperature.
【０００２】[0002]
【従来の技術】図７は、従来の赤外線検出器の回路図で
ある。図において、１は赤外線の入射による温度変化を
感知する感熱抵抗体、２は感熱抵抗体１にバイアスをか
けるための電流源、３はノードａでの電位変化を増幅す
る増幅器である。また図８は、上記図７のようなボロメ
ータ型赤外線検出器を示す構成図である。図において、
４はシリコン基板、５はＭＯＳ集積回路である。感熱抵
抗体１は、温度による抵抗変化率の大きい材料を用いて
いる。また、感熱抵抗体１の温度を効率的に上昇させる
ために、図に示すようにマイクロマシニング技術を用い
て基板と感熱抵抗体１とを分離して、感熱抵抗体１の熱
がシリコン基板４へ逃げないように断熱構造が採られて
いる。2. Description of the Related Art FIG. 7 is a circuit diagram of a conventional infrared detector. In the figure, reference numeral 1 denotes a thermal resistor which senses a temperature change due to the incidence of infrared rays, 2 denotes a current source for applying a bias to the thermal resistor 1, and 3 denotes an amplifier which amplifies a potential change at a node a. FIG. 8 is a block diagram showing a bolometer-type infrared detector as shown in FIG. In the figure,
4 is a silicon substrate and 5 is a MOS integrated circuit. The thermal resistor 1 is made of a material having a large resistance change rate depending on temperature. In order to efficiently raise the temperature of the thermal resistor 1, the substrate and the thermal resistor 1 are separated by using a micromachining technique as shown in FIG. Insulation structure is adopted so as not to escape to.
【０００３】次に動作について説明する。赤外線が感熱
抵抗体１に入射すると、感熱抵抗体１の抵抗値が変化
し、変化の割合に応じてノードａの電位が変化する。ノ
ードａの電位変化は増幅器３で増幅され信号として読み
出される。このようにして、赤外線の入射を、感熱抵抗
体１に印加されたバイアス電圧の変化として観察するこ
とができる。Next, the operation will be described. When infrared rays are incident on the thermal resistor 1, the resistance of the thermal resistor 1 changes, and the potential of the node a changes according to the rate of change. The potential change at the node a is amplified by the amplifier 3 and read out as a signal. In this manner, the incidence of infrared light can be observed as a change in the bias voltage applied to the thermal resistor 1.
【０００４】なお、図示していないが、上記のような赤
外線検出器は、行、列に配置して２次元に集積化された
赤外線アレイを形成する。各画素に配置された感熱抵抗
体１が、アレイ表面に入射した赤外線から映像信号を取
り出すことができるので、夜間撮影などが可能となる。[0004] Although not shown, the infrared detectors described above are arranged in rows and columns to form a two-dimensionally integrated infrared array. Since the thermal resistor 1 disposed in each pixel can extract a video signal from infrared rays incident on the array surface, nighttime photographing or the like can be performed.
【０００５】また、上記のようなボロメータ型赤外線検
出器は、抵抗の温度変化を利用しているため、赤外線の
入射による温度変化以上に、検出器周辺の環境温度の変
化によって出力電圧の大きさが変化してしまい、動作の
安定性に問題がある。そこで、赤外線検出器に温調器な
どの外部装置を取り付けて環境温度を安定させ、入射赤
外線による温度変化のみに応じて出力電圧が変動するよ
うにしている。Further, since the bolometer type infrared detector as described above utilizes a temperature change of the resistance, the magnitude of the output voltage is changed by a change in the environmental temperature around the detector more than a temperature change caused by the incidence of infrared rays. Is changed, and there is a problem in operation stability. Therefore, an external device such as a temperature controller is attached to the infrared detector to stabilize the environmental temperature, so that the output voltage fluctuates only in response to a temperature change due to incident infrared light.
【０００６】[0006]
【発明が解決しようとする課題】従来の赤外線検出器は
以上のように構成されているので、温調器の設置による
コストの増加、組立工程の複雑化といった問題点があっ
た。また、温調器を設置しても、温調器の性能によって
制御温度にはある程度の振幅があるため、長時間安定し
て動作させることが困難であるという問題点があった。Since the conventional infrared detector is constructed as described above, there are problems that the cost is increased due to the installation of the temperature controller and that the assembling process is complicated. Further, even if the temperature controller is installed, there is a problem that it is difficult to operate stably for a long time because the control temperature has a certain amplitude depending on the performance of the temperature controller.
【０００７】本発明は上記のような課題を解決するため
になされたもので、コストが安く且つ長時間安定した動
作が可能な赤外線検出器を得ることを目的とする。ま
た、本発明の赤外線検出器を搭載して、長時間安定して
撮像が可能な赤外線アレイを得ること目的とする。The present invention has been made to solve the above problems, and has as its object to provide an infrared detector which is inexpensive and can operate stably for a long time. It is another object of the present invention to obtain an infrared array capable of stably imaging for a long time by mounting the infrared detector of the present invention.
【０００８】[0008]
【課題を解決するための手段】この発明に係る赤外線検
出器は、赤外線の入射による温度変化と環境温度の変化
とを感知する第一の感熱抵抗体、環境温度の変化を感知
する第二の感熱抵抗体、この第二の感熱抵抗体の抵抗値
で決まる電位と基準電位との差を増幅する差動増幅器、
この差動増幅器の出力によって第一の感熱抵抗体に流れ
る電流を制御する電流源を備え、電流源は、環境温度の
変化による差動増幅器の出力変動分に応じた電流を第一
の感熱抵抗体に流し、第一の感熱抵抗体が赤外線の入射
による温度変化による電位変動のみを検出できるように
したものである。SUMMARY OF THE INVENTION An infrared detector according to the present invention comprises a first heat-sensitive resistor for detecting a change in temperature due to the incidence of infrared rays and a change in environmental temperature, and a second heat-sensitive resistor for detecting a change in environmental temperature. A heat-sensitive resistor, a differential amplifier for amplifying a difference between a potential determined by a resistance value of the second heat-sensitive resistor and a reference potential,
A current source for controlling a current flowing through the first thermal resistor according to an output of the differential amplifier; the current source supplies a current corresponding to an output variation of the differential amplifier due to a change in environmental temperature to the first thermal resistor; The first heat-sensitive resistor is allowed to flow through the body so that only a potential change due to a temperature change due to the incidence of infrared rays can be detected.
【０００９】また、赤外線の入射による温度変化と環境
温度の変化とを感知する第一の感熱抵抗体、環境温度の
変化を感知する第二の感熱抵抗体、この第二の感熱抵抗
体の抵抗値で決まる電位によって第一の感熱抵抗体に流
れる電流を制御する電流源を備え、電流源は、環境温度
の変化による第二の感熱抵抗体の電位変動分に応じた電
流を第一の感熱抵抗体に流し、第一の感熱抵抗体が赤外
線の入射による温度変化による電位変動のみを検出でき
るようにしたものである。Also, a first thermal resistor for sensing a change in temperature due to the incidence of infrared rays and a change in environmental temperature, a second thermal resistor for sensing a change in environmental temperature, and a resistance of the second thermal resistor. A current source that controls the current flowing through the first thermal resistor according to the potential determined by the value; the current source outputs a current corresponding to a potential variation of the second thermal resistor due to a change in environmental temperature to the first thermal resistor. The first thermosensitive resistor is allowed to detect only a potential change due to a temperature change due to the incidence of infrared rays.
【００１０】また、この発明に係る赤外線アレイは、請
求項１または２記載の赤外線検出器を搭載したものであ
る。Further, an infrared array according to the present invention has the infrared detector according to claim 1 or 2 mounted thereon.
【００１１】また、第一の感熱抵抗体と第二の感熱抵抗
体とが各画素に配置されているものである。Further, the first thermal resistor and the second thermal resistor are arranged in each pixel.
【００１２】[0012]
実施の形態１．図１は、本発明の実施の形態１による赤
外線検出器の回路図である。図において、１１は赤外線
の入射による温度変化を感知する第一の感熱抵抗体、１
２は赤外線の入射による温度変化は感知せず環境温度の
変化のみを感知する第二の感熱抵抗体、２１はＭＯＳト
ランジスタで構成され、ドレインが第一の感熱抵抗体１
１に接続された第一の電流源、２２は第一の電流源２１
と同じくＭＯＳトランジスタで構成され、ゲートが第一
の電流源２１に、ドレインが第二の感熱抵抗体１２に接
続された第二の電流源、６は差動増幅器、７はコンデン
サである。また、ａ、ｂはノード、ｃは基準電位の入
力、ｄは赤外線検出器の出力である。また図２は、上記
図１の赤外線検出器の断面図である。Embodiment 1 FIG. FIG. 1 is a circuit diagram of the infrared detector according to the first embodiment of the present invention. In the figure, reference numeral 11 denotes a first thermal resistor which detects a temperature change due to the incidence of infrared rays;
Reference numeral 2 denotes a second thermosensitive resistor which does not sense a temperature change due to the incidence of infrared rays but only a change in environmental temperature. Reference numeral 21 denotes a MOS transistor having a drain connected to the first thermosensitive resistor 1.
1, a first current source 22 connected to the first current source 21
Similarly, a second current source having a gate connected to the first current source 21, a drain connected to the second thermal resistor 12, a differential amplifier 6, and a capacitor 7 is provided. Also, a and b are nodes, c is a reference potential input, and d is an output of the infrared detector. FIG. 2 is a sectional view of the infrared detector shown in FIG.
【００１３】図２に示すように、第一の感熱抵抗体１１
は、例えばマイクロマシニング技術を応用して、検出器
を支持するシリコン基板４と熱的に分離した構造上に設
置し、赤外線の入射によって容易に温度変化が起こるよ
うな構造になっている。一方、第二の感熱抵抗体１２は
シリコン基板４上に設置してあるので、赤外線が入射し
てもそのときの熱は大熱容量体であるシリコン基板４へ
と伝わり、容易に温度変化が起こらないような構造とな
っている。このように各感熱抵抗体を構成することによ
り、第一の感熱抵抗体１１の抵抗値は、赤外線の入射に
よる温度変化と検出器の環境温度とで決定され、第二の
感熱抵抗体１２の抵抗値は環境温度のみで決定される。As shown in FIG. 2, the first thermal resistor 11
Is mounted on a structure thermally separated from the silicon substrate 4 supporting the detector by applying, for example, micromachining technology, and has a structure in which a temperature change easily occurs by the incidence of infrared rays. On the other hand, since the second thermal resistor 12 is provided on the silicon substrate 4, even when infrared rays are incident, the heat at that time is transmitted to the silicon substrate 4, which is a large heat capacity member, and the temperature changes easily. There is no structure. By configuring each thermal resistor in this manner, the resistance value of the first thermal resistor 11 is determined by the temperature change due to the incidence of infrared rays and the environmental temperature of the detector. The resistance value is determined only by the ambient temperature.
【００１４】次に動作について説明する。例えばある温
度（常温など）でノードａの電位が基準電位ｃと同じに
なるように差動増幅器６を設計しておく。この時、基準
電位ｃは出力ｄの電位と同程度としておくことが望まし
い。今、各感熱抵抗体が負の温度係数を持つとし、検出
器周辺の環境温度が上昇した場合、第一の感熱抵抗体１
１及び第二の感熱抵抗体１２の抵抗値は減少して、ノー
ドａ及び出力ｄの電位も減少する。これにより、ノード
ａの電位と基準電位ｃとの間には電位差が生じるため、
ノードｂの電位は、差動増幅器６のオフセット電圧から
上記電位差に応じて減少する。ノードｂの電位が減少す
ることにより、第一の電流源２１及び第二の電流源２２
のゲート−ソース間電圧は大きくなる。従って、第一の
電流源２１及び第二の電流源２２のソース−ドレイン間
の電流は増加して、結果的に、ノードａ及び出力ｄの電
位は再び上昇して基準電位ｃに近づく。出力ｄは、基準
電位ｃとほぼ同程度の電位を維持したまま、引き続き、
入射赤外線による温度変化に対応した抵抗変化分のみ電
位変化させることができる。つまり、第一の電流源２１
は、環境温度が変化しても、第一の感熱抵抗体１１にか
かる電圧が環境温度によって変化しないように、差動増
幅器６からの出力、即ち第二の感熱抵抗体１２の電位変
化分に応じて第一の感熱抵抗体１１に電流を流す。Next, the operation will be described. For example, the differential amplifier 6 is designed so that the potential of the node a becomes equal to the reference potential c at a certain temperature (such as normal temperature). At this time, it is desirable that the reference potential c be substantially equal to the potential of the output d. Now, assuming that each thermal resistor has a negative temperature coefficient, and if the environmental temperature around the detector rises, the first thermal resistor 1
The resistance values of the first and second thermal resistors 12 decrease, and the potentials of the node a and the output d also decrease. This causes a potential difference between the potential of the node a and the reference potential c,
The potential of the node b decreases from the offset voltage of the differential amplifier 6 according to the potential difference. As the potential of the node b decreases, the first current source 21 and the second current source 22
Of the gate-source voltage becomes large. Accordingly, the current between the source and drain of the first current source 21 and the second current source 22 increases, and as a result, the potentials of the node a and the output d rise again and approach the reference potential c. The output d continues to maintain a potential substantially equal to the reference potential c,
The potential can be changed only by the resistance change corresponding to the temperature change due to the incident infrared rays. That is, the first current source 21
The output from the differential amplifier 6, that is, the potential change of the second thermosensitive resistor 12, so that the voltage applied to the first thermosensitive resistor 11 does not change with the environmental temperature even if the environmental temperature changes. In response, a current is caused to flow through the first thermal resistor 11.
【００１５】以上のように、本実施の形態によれば、環
境温度によって第一の感熱抵抗体１１及び第二の感熱抵
抗体１２の抵抗値が変動しても、出力電圧は常に基準電
位程度になり、入射赤外線による温度変化のみに応じて
出力電圧を変動させることができる。従って、上記従来
例のように、温調器などの外部装置を設置する必要はな
いため、コストが安く且つ長時間安定した動作が可能で
ある。また、温調器を設置したとしても、温調器の性能
に左右されず、長時間安定した動作が可能である。As described above, according to the present embodiment, even if the resistance values of the first thermal resistor 11 and the second thermal resistor 12 fluctuate depending on the environmental temperature, the output voltage is always about the reference potential. Thus, the output voltage can be changed only in accordance with the temperature change due to the incident infrared rays. Therefore, unlike the above-described conventional example, there is no need to install an external device such as a temperature controller, so that stable operation can be performed at low cost for a long time. Even if a temperature controller is installed, stable operation can be performed for a long time without being affected by the performance of the temperature controller.
【００１６】なお、上記図１に示すように、ノードｂと
第一の電流源２１との間にコンデンサ７を接続すれば、
急激な温度変化によるノードｂにかかる電位の急激な変
動を抑えることが可能になり、各電流源で発生するノイ
ズを抑えることができる。If the capacitor 7 is connected between the node b and the first current source 21 as shown in FIG.
It is possible to suppress a rapid change in the potential applied to the node b due to a rapid temperature change, and to suppress noise generated in each current source.
【００１７】実施の形態２．図３は、本発明の実施の形
態２による赤外線検出器の回路図である。上記実施の形
態１と異なる点は差動増幅器６が無い点である。Embodiment 2 FIG. FIG. 3 is a circuit diagram of the infrared detector according to the second embodiment of the present invention. The difference from the first embodiment is that the differential amplifier 6 is not provided.
【００１８】次に動作について説明する。基本的な動作
は、上記実施の形態１と同様である。今、各感熱抵抗体
が負の温度係数を持つとし、検出器周辺の環境温度が上
昇した場合、負の抵抗温度係数をもつ第一の感熱抵抗体
１１及び第二の感熱抵抗体１２の抵抗値は減少し、ノー
ドａ及び出力ｄの電位は減少する。ノードａの電位の低
下によりノードｂの電位も低下するため、第一の電流源
２１及び第二の電流源２２のゲート−ソース間電圧は大
きくなる。従って、第一の電流源２１及び第二の電流源
２２のソース−ドレイン間の電流は増加し、ノードａ及
び出力ｄの電位は再び上昇して、結果的に環境温度の変
動によるノードａ、ｂでの変動は小さくなる。Next, the operation will be described. The basic operation is the same as in the first embodiment. Now, assuming that each thermal resistor has a negative temperature coefficient, and when the environmental temperature around the detector rises, the resistance of the first thermal resistor 11 and the second thermal resistor 12 having a negative temperature coefficient of resistance is increased. The value decreases and the potential at node a and output d decreases. Since the potential of the node b also decreases due to the decrease of the potential of the node a, the gate-source voltages of the first current source 21 and the second current source 22 increase. Therefore, the current between the source and the drain of the first current source 21 and the second current source 22 increases, and the potentials of the node a and the output d increase again. As a result, the nodes a, The fluctuation at b is small.
【００１９】ただしこの効果は、第一の電流源２１及び
第二の電流源２２の電流駆動能力が大きいほど効果的に
なる。電流駆動能力は、ＭＯＳトランジスタにゲート電
圧を印加したときのソース−ドレイン電流を流す能力を
示すものである。上記実施の形態１では、第二の感熱抵
抗体２２の抵抗値が大きく変化し、ノードａでの電位が
大きく変化しても、差動増幅器６により基準電位ｃとの
差分をとるため、該変化がそのまま各電流源の電流を制
御することはない。しかし、本実施の形態では、差動増
幅器６が無いため、ノードａで大きく電位が変化した場
合、該変化がそのまま各電流源の電流を制御することに
なるので、第一の電流源２１及び第二の電流源２２の電
流駆動能力が大きくなければ、電位変動分の電流を流す
ことができない。However, this effect becomes more effective as the current driving capabilities of the first current source 21 and the second current source 22 increase. The current driving capability indicates a capability of flowing a source-drain current when a gate voltage is applied to a MOS transistor. In the first embodiment, even if the resistance value of the second thermal resistor 22 greatly changes and the potential at the node a greatly changes, the difference from the reference potential c is obtained by the differential amplifier 6. The change does not directly control the current of each current source. However, in this embodiment, since the differential amplifier 6 is not provided, if the potential changes greatly at the node a, the change directly controls the current of each current source. Unless the current driving capability of the second current source 22 is large, it is impossible to flow a current corresponding to the potential fluctuation.
【００２０】以上のように、第一の電流源２１及び第二
の電流源２２の電流駆動能力の大きいＭＯＳトランジス
タを用いれば差動増幅器６を省略することができるた
め、赤外線検出器の設計が平易となり、また、回路のレ
イアウトも自由にできる。As described above, since the differential amplifier 6 can be omitted by using the MOS transistors having the large current driving capability of the first current source 21 and the second current source 22, the design of the infrared detector can be reduced. It becomes simple and the layout of the circuit can be made freely.
【００２１】実施の形態３．図４は、上記実施の形態１
の赤外線検出器を搭載した赤外線アレイの回路図、また
図５は、上記実施の形態２の赤外線検出器を搭載した赤
外線アレイの回路図である。図に示すように、マトリク
ス状に並べられた第一の感熱抵抗体１１が各画素に入射
した赤外線の検出を行い、水平信号線走査回路及び垂直
信号線走査回路により検出された信号を水平、垂直方向
に順次読み出して行く。各画素を構成する第一の感熱抵
抗体１１には、上記実施の形態１及び２による赤外線検
出器が接続されているので、赤外線アレイの環境温度が
変動しても、出力電位は基準電位付近で安定させること
ができ、長時間にわたり安定した撮像が可能となる。Embodiment 3 FIG. 4 shows the first embodiment.
FIG. 5 is a circuit diagram of an infrared array equipped with the infrared detector of the second embodiment, and FIG. 5 is a circuit diagram of an infrared array equipped with the infrared detector of the second embodiment. As shown in the figure, the first thermosensitive resistors 11 arranged in a matrix detect infrared rays incident on each pixel, and the signals detected by the horizontal signal line scanning circuit and the vertical signal line scanning circuit are horizontally, Reading is performed sequentially in the vertical direction. Since the infrared detectors according to the first and second embodiments are connected to the first thermal resistor 11 constituting each pixel, the output potential is close to the reference potential even if the ambient temperature of the infrared array fluctuates. , And stable imaging can be performed for a long time.
【００２２】実施の形態４．上記実施の形態３で述べた
ような赤外線アレイは、数センチ角のサイズを有するの
で、第一の感熱抵抗体１１を形成する膜の膜厚や組成
が、アレイの場所によって異なる場合がある。従って、
第一の感熱抵抗体１１の抵抗値は、各画素で不均一とな
り、これにより出力に分布ができてしまい映像として問
題が生じる。そこで、これを解決するために、各画素の
抵抗値ばらつきに応じた出力ばらつきをメモリなどの記
憶手段に記憶させておき、出力信号を補正することで映
像のばらつきを防ぐことが考えられるが、装着部品数を
増加させ望ましくない。Embodiment 4 Since the infrared array as described in the third embodiment has a size of several centimeters square, the thickness and composition of the film forming the first thermal resistor 11 may be different depending on the location of the array. Therefore,
The resistance value of the first heat-sensitive resistor 11 becomes non-uniform in each pixel, whereby the output is distributed, which causes a problem as an image. Therefore, in order to solve this, it is conceivable to store the output variation according to the resistance variation of each pixel in a storage unit such as a memory and correct the output signal to prevent the variation of the image. This increases the number of mounted parts, which is not desirable.
【００２３】本実施の形態では、以上のような問題を解
決するために、第一の感熱抵抗体１１と第二の感熱抵抗
体１２とを同一画素内に組み込み、上記実施の形態２に
よる赤外線検出器を画素ごとに設けた。図６は、本実施
の形態による赤外線アレイの回路図である。このような
構成とすることにより、各画素間の第一の感熱抵抗体１
１の抵抗値がばらついても、第一の感熱抵抗体１１に流
す電流を画素毎に制御するため、画素間の出力のばらつ
きを小さくすることができる。In the present embodiment, in order to solve the above-mentioned problem, the first thermal resistor 11 and the second thermal resistor 12 are incorporated in the same pixel, and the infrared rays according to the second embodiment are used. A detector was provided for each pixel. FIG. 6 is a circuit diagram of the infrared array according to the present embodiment. With such a configuration, the first heat-sensitive resistor 1 between the pixels can be used.
Even if the resistance value of 1 varies, the current flowing through the first thermosensitive resistor 11 is controlled for each pixel, so that the variation in output between pixels can be reduced.
【００２４】[0024]
【発明の効果】以上のように、請求項１記載の発明によ
れば、赤外線の入射による温度変化と環境温度の変化と
を感知する第一の感熱抵抗体、環境温度を感知する第二
の感熱抵抗体、この第二の感熱抵抗体の抵抗値で決まる
電位と基準電位との差を増幅する差動増幅器、この差動
増幅器の出力によって第一の感熱抵抗体に流れる電流を
制御する電流源を備え、電流源は、環境温度の変化によ
る差動増幅器の出力変動分に応じた電流を第一の感熱抵
抗体に流し、第一の感熱抵抗体が赤外線の入射による温
度変化による電位変動のみを検出できるようにしたもの
であるので、コストが安く且つ長時間安定した動作が可
能な赤外線検出器を得る効果がある。As described above, according to the first aspect of the present invention, the first thermal resistor for sensing the temperature change due to the incidence of infrared rays and the environmental temperature change, and the second thermal resistor for sensing the environmental temperature. A heat-sensitive resistor, a differential amplifier for amplifying a difference between a potential determined by a resistance value of the second heat-sensitive resistor and a reference potential, and a current for controlling a current flowing through the first heat-sensitive resistor by an output of the differential amplifier The current source supplies a current according to the output variation of the differential amplifier due to a change in environmental temperature to the first thermal resistor, and the first thermal resistor causes a potential variation due to a temperature change due to the incidence of infrared rays. Since only the infrared detector can be detected, there is an effect of obtaining an infrared detector which is inexpensive and can operate stably for a long time.
【００２５】また、請求項２記載の発明によれば、赤外
線の入射による温度変化と環境温度の変化とを感知する
第一の感熱抵抗体、環境温度の変化を感知する第二の感
熱抵抗体、この第二の感熱抵抗体の抵抗値で決まる電位
によって第一の感熱抵抗体に流れる電流を制御する電流
源を備え、電流源は、環境温度の変化による第二の感熱
抵抗体の電位変動分に応じた電流を第一の感熱抵抗体に
流し、第一の感熱抵抗体が赤外線の入射による温度変化
による電位変動のみを検出できるようにしたものである
ので、コストが安く且つ長時間安定した動作が可能な赤
外線検出器を得る効果がある。According to the second aspect of the present invention, the first thermal resistor senses a temperature change due to the incidence of infrared rays and the environmental temperature, and the second thermal resistor senses the environmental temperature change. A current source that controls a current flowing through the first thermosensitive resistor according to a potential determined by a resistance value of the second thermosensitive resistor, wherein the current source changes the potential of the second thermosensitive resistor due to a change in environmental temperature. The current corresponding to the minute is passed through the first thermosensitive resistor, and the first thermosensitive resistor can detect only the potential change due to the temperature change due to the incidence of infrared rays, so that the cost is low and stable for a long time. There is an effect of obtaining an infrared detector capable of performing the above operation.
【００２６】また、請求項３記載の発明によれば、請求
項１または２記載の赤外線検出器を搭載したものである
ので、安定して長時間の撮影ができる効果が得られる。Further, according to the third aspect of the present invention, since the infrared detector according to the first or second aspect is mounted, an effect of stably photographing for a long time can be obtained.
【００２７】また、請求項４記載の発明によれば、第一
の感熱抵抗体と第二の感熱抵抗体とが各画素に配置され
ているものであるので、安定して長時間の撮影ができる
効果が得られる。According to the fourth aspect of the present invention, since the first thermal resistor and the second thermal resistor are arranged in each pixel, stable long-time photographing can be performed. The effect that can be obtained is obtained.
【図１】 本発明の実施の形態１による赤外線検出器の
回路図である。FIG. 1 is a circuit diagram of an infrared detector according to a first embodiment of the present invention.
【図２】 本発明の実施の形態１による赤外線検出器を
示す断面図である。FIG. 2 is a cross-sectional view illustrating the infrared detector according to the first embodiment of the present invention.
【図３】 本発明の実施の形態２による赤外線検出器の
回路図である。FIG. 3 is a circuit diagram of an infrared detector according to a second embodiment of the present invention.
【図４】 本発明の実施の形態３による赤外線アレイを
示す構成図である。FIG. 4 is a configuration diagram showing an infrared array according to a third embodiment of the present invention.
【図５】 本発明の実施の形態３による別の赤外線アレ
イを示す構成図である。FIG. 5 is a configuration diagram showing another infrared array according to the third embodiment of the present invention.
【図６】 本発明の実施の形態４による赤外線アレイを
示す構成図である。FIG. 6 is a configuration diagram showing an infrared array according to a fourth embodiment of the present invention.
【図７】 従来の赤外線検出器の回路図である。FIG. 7 is a circuit diagram of a conventional infrared detector.
【図８】 従来の赤外線検出器を示す構成図である。FIG. 8 is a configuration diagram showing a conventional infrared detector.
１１ 第一の感熱抵抗体、１２ 第二の感熱抵抗体、２
１ 第一の電流源、２２第二の電流源、４ シリコン基
板、５ ＭＯＳ集積回路、６ 差動増幅器、７コンデン
サ11 first thermal resistor, 12 second thermal resistor, 2
1 first current source, 22 second current source, 4 silicon substrate, 5 MOS integrated circuit, 6 differential amplifier, 7 capacitor
Claims (4)
の変化とを感知する第一の感熱抵抗体、上記環境温度の
変化を感知する第二の感熱抵抗体、この第二の感熱抵抗
体の抵抗値で決まる電位と基準電位との差を増幅する差
動増幅器、この差動増幅器の出力によって上記第一の感
熱抵抗体に流れる電流を制御する電流源を備え、上記電
流源は、上記環境温度の変化による上記差動増幅器の出
力変動分に応じた電流を上記第一の感熱抵抗体に流し、
上記第一の感熱抵抗体が上記赤外線の入射による温度変
化による電位変動のみを検出できるようにしたことを特
徴とする赤外線検出器。1. A first thermal resistor for sensing a change in temperature and a change in environmental temperature due to the incidence of infrared rays, a second thermal resistor for sensing a change in environmental temperature, and a second thermal resistor. A differential amplifier for amplifying a difference between a potential determined by a resistance value and a reference potential; and a current source for controlling a current flowing through the first thermosensitive resistor by an output of the differential amplifier. Flowing a current corresponding to the output variation of the differential amplifier due to a change in temperature to the first thermal resistor,
An infrared detector, wherein the first thermal resistor can detect only a potential change due to a temperature change due to the incidence of the infrared ray.
の変化とを感知する第一の感熱抵抗体、上記環境温度の
変化を感知する第二の感熱抵抗体、この第二の感熱抵抗
体の抵抗値で決まる電位によって上記第一の感熱抵抗体
に流れる電流を制御する電流源を備え、上記電流源は、
上記環境温度の変化による上記第二の感熱抵抗体の電位
変動分に応じた電流を上記第一の感熱抵抗体に流し、上
記第一の感熱抵抗体が上記赤外線の入射による温度変化
による電位変動のみを検出できるようにしたことを特徴
とする赤外線検出器。2. A first thermal resistor for sensing a change in temperature and a change in environmental temperature due to the incidence of infrared rays, a second thermal resistor for sensing a change in environmental temperature, and a second thermal resistor. A current source that controls a current flowing through the first thermosensitive resistor according to a potential determined by a resistance value, wherein the current source includes:
A current corresponding to the potential variation of the second thermal resistor due to the change in the environmental temperature is caused to flow through the first thermal resistor, and the first thermal resistor causes a potential variation due to a temperature variation due to the incidence of the infrared rays. An infrared detector characterized in that only infrared rays can be detected.
搭載したことを特徴とする赤外線アレイ。3. An infrared array having the infrared detector according to claim 1 mounted thereon.
が各画素に配置されていることを特徴とする請求項３記
載の赤外線アレイ。4. The infrared array according to claim 3, wherein a first thermal resistor and a second thermal resistor are arranged in each pixel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13226397A JP3531422B2 (en) | 1997-05-22 | 1997-05-22 | Infrared detector and infrared array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13226397A JP3531422B2 (en) | 1997-05-22 | 1997-05-22 | Infrared detector and infrared array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10318843A true JPH10318843A (en) | 1998-12-04 |
| JP3531422B2 JP3531422B2 (en) | 2004-05-31 |
Family
ID=15077198
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13226397A Expired - Fee Related JP3531422B2 (en) | 1997-05-22 | 1997-05-22 | Infrared detector and infrared array |
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| Country | Link |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7122798B2 (en) | 2003-02-13 | 2006-10-17 | Kabushiki Kaisha Toshiba | Infrared image sensor |
| JPWO2006043384A1 (en) * | 2004-10-18 | 2008-05-22 | 松下電器産業株式会社 | Infrared sensor and infrared sensor array |
| JP2012132919A (en) * | 2010-12-22 | 2012-07-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Measurement system and image sensor including the same |
| KR101846017B1 (en) * | 2017-09-18 | 2018-04-05 | 엘아이지넥스원 주식회사 | Apparatus and method for generating image with noise |
-
1997
- 1997-05-22 JP JP13226397A patent/JP3531422B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7122798B2 (en) | 2003-02-13 | 2006-10-17 | Kabushiki Kaisha Toshiba | Infrared image sensor |
| JPWO2006043384A1 (en) * | 2004-10-18 | 2008-05-22 | 松下電器産業株式会社 | Infrared sensor and infrared sensor array |
| JP2012132919A (en) * | 2010-12-22 | 2012-07-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Measurement system and image sensor including the same |
| KR101846017B1 (en) * | 2017-09-18 | 2018-04-05 | 엘아이지넥스원 주식회사 | Apparatus and method for generating image with noise |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3531422B2 (en) | 2004-05-31 |
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