JPH08293540A - Substrate holding device - Google Patents

Abstract

PURPOSE: To provide a substrate holding device which is capable of holding data with regard to substrates and extracting them immediately. CONSTITUTION: A substrate holding device 1 is used for housing substrates 10 subjected to a prescribed manufacturing process and composed of a box 3 or a case 5 where the substrates 10 are housed and held and a date control 4 which controls data with regard to processing of the substrates 10 and is fitted to the box 3 or the case 5. The data control 4 is equipped with a memory which stores the processing predetermined conditions and executed processing conditions of the substrates 10 and the condition and state of the substrate 10 after they are processed and a condition control which judges whether the processing predetermined conditions and the executed processing conditions are adequate or not basing on the data stored in the memory and sets following processing conditions.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate holding device for storing a substrate which is subjected to various kinds of processing in a predetermined manufacturing process.

[0002]

2. Description of the Related Art In recent years, semiconductor devices are being miniaturized more and more, and the design rule is 0.35 μm in the minimum space.
Items less than m are also being developed and produced. In order to deal with this, the manufacturing process has become complicated, and the manufacturing technology is required to be more sophisticated.

Under such circumstances, when a semiconductor device is manufactured, a predetermined process condition is applied to a substrate such as a wafer according to a predetermined process condition. in this case,
Processing conditions are set so that manufacturing variations are within an allowable range.

In the case of manufacturing a semiconductor device as described above, documents and a control device (for example, a computer or the like) record and manage the processing history in advance, and after a certain process is completed, a predetermined record is made. Go to the next step. For example, when a record is managed as a document, after a certain process is completed, a worker records an instruction on a document and gives an instruction to proceed to the next process. Further, in the case of record management by the control device, the individual number or the individual identification number given to the semiconductor device is read, and predetermined items are recorded in the storage device based on the individual number or the individual identification number. , Outputs an instruction to proceed to the next process.

[0005]

However, in the record management by documents, it is inappropriate to bring a document which is a source of fine dust into a clean room for processing, and a lot composed of a plurality of substrates. In the case of processing in step 1, although it is possible to manage individual lots, it is very difficult to manage the whole lot in terms of records. In addition, when recording control is performed by the control device, recording problems (such as storage capacity) can be solved, but when knowing the processing status of each lot, the processing conditions, the status of the substrate after processing, etc., It is necessary to inquire the control device for the individual number, symbol, etc. of the lot and collate them, and it is difficult for the processing device to immediately obtain information.

Moreover, in recent years, the size of the substrate has increased, so that variations in the manufacturing process are prominent even in the same lot, and it is necessary to set the optimum treatment method and treatment condition for each substrate even in the same lot. Is happening. When recording and managing the information of the entire lot in the control device,
If the optimum conditions for each lot and for each substrate are inquired and collated with the control device at the stage when the lot is put into the manufacturing equipment for each process, the processing time will be delayed and the productivity will decrease. Cause to cause.

Therefore, it is an object of the present invention to provide a substrate holding device capable of holding information regarding a substrate and immediately pulling it out.

[0008]

The present invention is a substrate holding device made to achieve the above object. That is, the substrate holding apparatus of the present invention is for storing a substrate to be processed in a predetermined manufacturing process, and stores information about the processing of the substrate in a storage unit for holding and storing the substrate. The information management means for managing is attached. Further, as the information management means, a storage means for storing the processing scheduled condition of the substrate, the processing execution condition, and the state and situation after the processing, and the suitability of the subsequent processing scheduled condition and the processing execution condition based on the stored contents of the storage means. It is also a substrate holding device having condition management means for making judgments and settings.

[0009]

In the present invention, since the information management means for managing the information regarding the processing of the substrate is attached to the storage portion for holding and storing the substrate, the information regarding the processing of the substrate moves between the manufacturing steps together with the substrate. It becomes a state. That is, the apparatus for processing the substrate can immediately obtain the information regarding the processing of the substrate by reading the information from the information management means that has moved together with the substrate.

Further, the storage means of the information management means stores the scheduled processing conditions of the substrate, the processing execution conditions, and the state and status after processing, and the condition management means obtains the processed status and status of the storage means. Then, based on this, the suitability of the subsequent processing schedule condition and the processing execution condition is judged. Further, the subsequent scheduled processing conditions and the processing execution conditions are set so as to feed back the suitability determination. As a result, in an apparatus that performs subsequent processing, by referring to the set scheduled processing conditions and processing execution conditions, the optimal processing for the substrate can be immediately performed without making any particular corrections on the side of the apparatus. Will be able to apply.

[0011]

Embodiments of the substrate holding apparatus of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic sectional view illustrating a substrate holding device of the present invention, in which (a) is a box type,
(B) shows the one-sheet storage type. As shown in FIG. 1A, a box-type substrate holding device 1 includes a carrier 2 for holding a plurality of (here, 12) substrates 10 and a box 3 for accommodating the carriers 2. The lid 3 a provided on the box 3 and the information management unit 4 attached to the lid 3 a are provided.

Further, the substrate holding device 1 shown in FIG.
Is configured to include a case 5 for holding and storing one substrate 10 by the holding unit 5a, and an information management unit 4 attached to the case 5. In any of the substrate holding devices 1, the information management unit 4 also moves together with the substrate 10 that moves between manufacturing processes.

The information management unit 4 is composed of, for example, an IC card, and can input / output information to / from a processing device for processing the substrate 10. FIG. 2 is a block diagram illustrating the internal configuration of the information management unit 4. The information management unit 4 includes information about the substrate 10 (see FIG. 1), mainly processing scheduled conditions, processing execution conditions,
A memory 41, which is a storage unit that stores a state and a state after processing, a condition management unit 42 that inputs and outputs information to and from the processing apparatus 11 of the substrate 10, and an evaluation apparatus 12 of the processed substrate 10. It has an input / output unit 43 that inputs and outputs information between them.

The condition management unit 42 also outputs a predetermined information to the processing device 11 and an output unit 42a and a memory 4.
A judgment unit 42b for judging suitability of a process scheduled condition or a process execution condition based on the stored contents in 1, a calculation unit 42c for performing a predetermined process on information, and a read / write unit 42d for reading and writing information in the memory 41. It consists of

The memory 41 is composed of, for example, a semiconductor memory device or one using magnetism, and is capable of easily writing, reading and erasing a large amount of information. The information management unit 4 having such a configuration includes the lid 3a of the box 3 that holds and stores the substrate 10 shown in FIG.
It is attached to the case 5 and moves between the manufacturing processes together with the substrate 10. Then, the processing device 11 in each manufacturing process
2 (see FIG. 2), the predetermined processing and the processing execution condition for the substrate 10 are obtained from the memory 41 of the information management unit 4 and the predetermined processing is performed.

Further, after the processing, the evaluation of the substrate 10 is performed by the evaluation device 12 (see FIG. 2), and the result is stored in the memory 41 via the input / output unit 43 of the information management unit 4. . Input / output of information between the information management unit 4 and the processing device 11 and the evaluation device 12 may be performed via a predetermined cable (not shown) or by using optical communication, infrared rays, or microwaves. To do.

The information management unit 4 also manages the suitability of the subsequent processing scheduled condition and the processing execution condition for the substrate 10 and the setting based on the evaluation result and the state and condition after the processing stored in the memory 41. This is done in the section 42. That is, the condition management unit 42 performs processing such as correction of the scheduled processing condition and the processing execution condition in order to feed back the result of the predetermined processing to the next processing. As a result, in the next processing device 11, the processing scheduled condition after the correction,
The processing execution condition can be immediately read from the memory 41, and the optimum processing for the substrate 10 can be performed.

Next, the operation of the information management section 4 of the substrate holding device 1 of the present invention will be described based on a specific processing example.
FIG. 3 is a schematic sectional view (No. 1) for explaining a processing example,
It shows a part of the flattening step in the semiconductor manufacturing process. First, as shown in FIG. 3A, a silicon oxide film 21 is formed on a substrate 10 made of silicon or the like, and an aluminum wiring 22 is formed thereon. Further, a silicon oxide film 23 is formed on the aluminum wiring 22 by a vapor phase reaction, and an organic S film is formed thereon as a planarization layer.
The OG film 24 is formed.

At this time, the silicon oxide film 23 was formed with a target film thickness t ₁ of 400 nm, for example, but it is assumed that the film thickness is actually 420 nm due to process variations. The actual film thickness t ₁ is measured by the evaluation device 12 shown in FIG.
Will be stored.

The film thickness of the organic SOG film 24 is also measured by the evaluation device 12 and stored in the memory 41. As for this value, the film thickness t _{2 at a} place where the aluminum wiring 22 is not present is, for example, 600 nm, and the aluminum wiring 22 is
The film thickness t _{3 at the} place where there is is, for example, 100 nm.

Next, as shown in FIG. 3B, organic SO
The G film 24 and the silicon oxide film 23 are etched to leave a silicon oxide film 23 of a predetermined thickness t ₄ on the aluminum wiring 22. For example, as this etching, CF ₄ / CHF ₃ / Ar = 50/10 / 600sc
The conditions of pressure of 260 Pa and RF output of 500 W are set at a flow rate of cm, and the organic SOG film 24 under these conditions is set.
And the etching rate of the silicon oxide film 23 is 500 n
These conditions are also stored in advance in the memory 41 as scheduled processing conditions at a rate of about m / min.

Further, the film thickness t is formed on the aluminum wiring 22.
The condition of leaving the 100 nm silicon oxide film 23 as ₄ is also stored in the memory 41 in advance. For this reason,
If there is no process variation, the organic SOG film 24 is etched to 100 nm and the silicon oxide film 23 is etched to 300 nm.
nm etching will result in a film thickness t on the aluminum wiring 22.
As a result, the 100 nm silicon oxide film 23 can be left as ₄ .

However, since the film thickness t ₁ of the silicon oxide film 23 is 420 nm formed in the previous process shown in FIG. 3A, it is necessary to correct the process execution conditions. The condition management unit 42 of the information management unit 4 shown in FIG. 2 performs the correction process of the process execution condition. That is, the film thickness t ₁ of the silicon oxide film 23 and the aluminum wiring 22 of the organic SOG film 24 stored as the evaluation result in the memory 41.
To determine the upper film thickness t ₃ and the film thickness t ₄ (planned value) of the silicon oxide film 23 to be left on the aluminum wiring 22, the determining unit 42b reads the film thickness t ₄ of the silicon oxide film 23 by the calculating unit 42c. How much the organic SOG film 24 and the silicon oxide film 23 should be etched is calculated.

[0024] That is, the determination unit 42b determines whether the film thickness t ₃ of the aluminum wiring 22 having a thickness t ₁ and the organic SOG film 24 of the silicon oxide film 23 which is read as a result of evaluation is in the respective set value If the preset value is met, the etching condition stored in advance is output from the output unit 42a to the processing device 11.

On the other hand, when the film thickness t ₁ of the silicon oxide film 23 is different from the set value as in this embodiment, the amount of deviation from the set value (in this case, the film thickness t ₁ Is 20 nm thicker than the set value) by the calculation unit 42c,
Further, a process of correcting the etching condition is performed by a type that feeds back the deviation amount.

In the case of this embodiment, the silicon oxide film 2
Since the film thickness t _{1 of No.} 3 is 420 nm with respect to the target 400 nm, the film thickness t ₄ of the silicon oxide film 23 on the aluminum wiring 22 is 100 nm by etching.
In order to achieve this, it is necessary to etch the organic SOG film 24 by 100 nm and then etch the silicon oxide film 23 by 320 nm. The calculation unit 42c calculates the conditions necessary for this etching from the etching rate and stores this in the memory 41.

In this case, the organic SOG film 24 is 100
The etching time of 0.2 minutes (12 seconds) is calculated for etching the silicon oxide film 23, and the etching time of 0.64 minutes (38.4 seconds) is calculated for etching the silicon oxide film 23 to 320 nm. As 0.84
The minute (50.4 seconds) is stored in the memory 41.

After the correction of the processing execution conditions as described above, the information management section 4 together with the substrate 10 is conveyed to the processing apparatus 11 for etching. The processing device 11 reads out the processing execution conditions stored in the memory 41 of the information management unit 4 and sets the conditions according to the processing execution conditions. In this example, the etching time is 0.84 minutes (50.4 seconds). Etching is performed so that the silicon oxide film 23 having a film thickness t ₄ of 100 nm is left on the aluminum wiring 22.

In this way, the information management unit 4 corrects the etching conditions according to the formed film thickness and feeds it back during the subsequent etching process. As a result, the etching process can be performed so that the optimum thickness t ₄ of the silicon oxide film 23 remains. Even in the case of lot processing in which a plurality of substrates 10 are transported and processed as one lot, not only the overall management but also the condition setting according to the processing state and status is performed for each substrate 10. It is also possible.

FIG. 4 is a schematic sectional view (No. 2) for explaining a processing example. In this example, first, as shown in FIG. 4A, a silicon oxide film 21 is formed on a substrate 10, an aluminum wiring 22 is formed thereon, and then a silicon oxide film 23 is formed by vapor deposition. Further, an organic SOG film 24 for flattening is formed.

Then, as shown in FIG. 4B, organic S
The OG film 24 and the silicon oxide film 23 are etched, and the silicon oxide film 23 having a predetermined thickness is left on the aluminum wiring 22. At this time, the film thickness t ₅ of the remaining silicon oxide film 23 is determined by the evaluation device 12 shown in FIG.
Is measured by and is stored in the memory 41 of the information management unit 4. In this example it has a thickness t ₅ of 30nm thin 70nm with respect to the target 100 nm, which is assumed to be stored in the memory 41.

Next, as shown in FIG. 4C, a process of forming a silicon oxide film 25 on the silicon oxide film 23 on the aluminum wiring 22 is performed. Aluminum wiring 22
Assuming that the total thickness t ₆ of the upper silicon oxide films 23 and 25 is set to 400 nm, for example, the silicon oxide film 25 may be formed on the silicon oxide film 23 to a thickness t ₇ of 330 nm. It will be.

In the information management unit 4, before the formation process of the silicon oxide film 25, the judgment unit 42b of the condition management unit 42 stores the silicon oxide film on the aluminum wiring 22 stored as the evaluation result in the memory 41. The film thickness t _{5 of} 23,
The previously stored target thickness value (100 nm in this case) of the silicon oxide film 23 remaining after etching is read out and compared with each other. As a result of this comparison, if they are the same, the planned processing conditions are output as the processing execution conditions to the processing apparatus 11 that forms the silicon oxide film 25 without changing the planned processing conditions.

On the other hand, when the film thickness t ₅ of the silicon oxide film 23 is different from the film thickness target value as in this embodiment,
The calculation unit 42c calculates the deviation amount, and further performs a process of correcting the process scheduled condition of the film thickness t ₇ of the silicon oxide film 25 formed in the subsequent process. That is, in this case, the film thickness t ₇ of the silicon oxide film 25 is 30 n greater than the film thickness target value.
Since it is formed to be m thin, the planned processing conditions are modified so that the silicon oxide film 25 is formed to 330 nm in order to make the thickness of the entire silicon oxide films 23 and 25 400 nm.

In the processing apparatus 11 for vapor-depositing the silicon oxide film 25, the corrected scheduled processing conditions are obtained as the processing execution conditions from the memory 41 of the information management unit 4 which has been transported together with the substrate 10, and the predetermined conditions are obtained. Make settings. As a result, the silicon oxide film 25 is formed to have a thickness of 330 nm, and the silicon oxide films 23 and 25 having a total thickness of 400 nm as desired are formed on the aluminum wiring 22.

In other processing, the substrate 1 after processing is also used.
The state or situation of 0 is evaluated by the evaluation device 12, and the result is stored in the memory 41 so that the next process can be performed. Then, in the subsequent processing, the condition management unit 42 determines whether or not the scheduled processing condition and the processing execution condition are good or bad based on the evaluation result, and the subsequent processing device 11 stores the scheduled processing condition and the processing execution condition from the memory 41. It is possible to read out immediately and shift to the actual processing. In other words, the processing apparatus 11 side can immediately start the optimum processing without changing the condition for the evaluation result of the substrate 10.

In particular, by using a semiconductor memory element as the memory 41 for storing information on the processing of the substrate 10, it becomes possible to store information for each substrate and immediately feed it back to each manufacturing process. For this reason,
Even in the case of a lot process in which a plurality of substrates 10 are transported as one lot by the box-type substrate holding device 1 as shown in (a) and a predetermined process is performed, manufacturing control for each substrate 10 is performed. It can be performed accurately, and it is possible to suppress variations in lots and perform optimal production as targeted.

Although the information management unit 4 is attached to the lid 3a of the box 3 or the case 5 in this embodiment, the attachment position is not limited to this. Further, both the box type and the one-sheet storage type of the substrate holding device 1 store the substrate 10 in the box, but the present invention is not limited to such a type, and the substrate 10 may be, for example, a frame. The same applies to the case of holding and transporting the information, and in this case, the information management unit 4 may be attached to the frame.

[0039]

As described above, the substrate holding device of the present invention has the following effects. That is, in the substrate holding device of the present invention, since the information management means for managing the information about the processing of the substrate is attached to the storage unit for storing the substrate, the substrate processing schedule condition and the substrate processing schedule as well as the transportation of the substrate between the manufacturing processes are provided. It is also possible to transfer information including processing execution conditions, post-processing states and situations. As a result, in the processing apparatus of each manufacturing process, it becomes possible to immediately read or write the information regarding the processing of the substrate from the information management means, and it is possible to perform the rapid processing.

Further, since it becomes possible to easily manage the information for each substrate, it is possible to suppress variations in manufacturing between substrates and manufacture high quality products with high productivity.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view illustrating a substrate holding device of the present invention, in which (a) is a box type and (b) is a single-storing type.

FIG. 2 is a block diagram illustrating an internal configuration of an information management unit.

FIG. 3 is a schematic sectional view (No. 1) for explaining a processing example.

FIG. 4 is a schematic sectional view (No. 2) for explaining a processing example.

[Explanation of symbols]

 1 substrate holding device 2 carrier 3 box 4 information management unit 5 case 10 substrate 11 processing device 12 evaluation device 41 memory 42 condition management unit

Claims (3)

[Claims] 1. A substrate holding device for storing a substrate to be processed in a predetermined manufacturing process, comprising: a storage unit for holding and storing the substrate; and a substrate attached to the storage unit for storing the substrate. An apparatus for holding a substrate, comprising: an information management unit that manages information regarding processing. 2. The information management means stores a scheduled processing condition of the substrate, a processing execution condition, a state and a status after the processing, and a scheduled future processing condition based on the stored contents of the storage means. The substrate holding apparatus according to claim 1, further comprising a condition management unit that determines whether or not the processing execution condition is appropriate. 3. The substrate holding device according to claim 2, wherein the storage means is a semiconductor memory element.