JPH08139218A - Hybrid integrated circuit device and its manufacture - Google Patents

Abstract

PURPOSE: To prevent a resin flash from sticking to the exposed surface of a radiating plate in a hybrid integrated circuit device, by performing its transfer molding while clamping up and down through ejecting elements the supporting plate for supporting its ceramic board in the case of its transfer molding. CONSTITUTION: A lead frame 4 is clamped between lower and upper forms 33, 34 of a molding form 32, and a cavity 35, a runner 36, a gate 37 and the like are formed. In the lower and upper forms 33, 34, electing elements 33a, 33b made of an elastic substance are provided in the opposite parts to each other, and a supporting plate 5 is sandwiched between them. Therefore, the rear surface of a radiating plate 15 fastened to a ceramic board 9 is adhered tightly to the bottom of the cavity 35, and thereby, resin is prevented from flowing into the clearance between the bottom of the cavity 35 and a radiating surface 16 of the radiating plate 15. Also, in the cavity 35, the supporting plate 5 and the ceramic board 9 are prevented from vibrating up and down. Therefore, after the transfer molding of a hybrid integrated circuit device, resin flash is prevented from being generated on the radiating surface 16 of the radiating plate 15.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device (hybrid IC) and a method of manufacturing the same, and is particularly effective when applied to a technique for manufacturing a hybrid integrated circuit device having a structure in which a ceramic substrate is mounted on a metal plate. Regarding

[0002]

2. Description of the Related Art In a hybrid integrated circuit device,
A transfer mold hybrid IC is known as a structure for achieving high integration. Regarding the transfer mold type hybrid IC, "Latest hybrid mounting technology" issued by the Industrial Research Institute, May 15, 1988, P1
3 and P14. In this document, "an insulating area is provided on a lead frame for a semiconductor IC, on which active elements and passive elements are all mounted in a chip state,
It is packaged in a transfer mold to form a single package. Is stated. " In the drawing of the document, a wiring sheet is attached on a lead frame in a mold via an adhesive, and a conductor wiring is provided on the wiring sheet, and an IC chip, a Tr chip and a composite R ( C) An array is mounted.

Further, Japanese Patent Laid-Open No. 61-102163 discloses a hybrid IC manufacturing technique using a metallic lead frame in order to use the monolithic IC manufacturing line as it is. This document discloses a structure in which a multilayer wiring board having a semiconductor pellet, a capacitor element pattern, a resistance element pattern, etc. is fixed to a land of a lead frame.

On the other hand, in a semiconductor device such as an LSI having a structure in which a single LSI chip is sealed in a package,
Due to the improvement in performance, further improvement in heat dissipation is desired. The heat dissipation means are listed in Nikkei BP's "Nikkei Electronics" September 21, 1991 issue, P123 to P136. As a method of changing the structure, a heat dissipation fin mounting method is used as the external structure change, and a lead is used as the internal structure change There are multi-layered frames and embedded heat sinks. In these methods, increasing the unit price of component materials and embedding a high-density board become obstacles. In addition, in the method of changing the material, the lead frame material is changed to copper to increase the thermal conductivity of the lead frame, and the high heat conductive resin is used as the resin forming the sealing body (package) to radiate heat. There are methods such as improving the sex. Further, in the heat sink embedding method in the above-mentioned document, one surface of the heat sink (heat spreader) is exposed from the package.

[0005]

DISCLOSURE OF THE INVENTION The inventors of the present invention have studied a structure in which the heat spreader (heat dissipation plate) is incorporated in order to improve heat dissipation even in a hybrid integrated circuit device. Since the heat spreader has a structure in which one surface is exposed on one surface of the sealing body, the outer surface of the heat spreader comes into contact with the cavity bottom of the mold during transfer molding. At this time, heat
Since the spreader is supported via the lead frame, it becomes difficult for the force that strongly presses the heat spreader against the bottom of the cavity to act, and a gap may occur between the heat spreader and the bottom of the cavity. Although this gap is thin, if resin penetrates, it causes a defect called resin flash after molding.

Therefore, the inventor of the present invention considered providing the mold with a pin for strongly pressing the heat spreader against the cavity bottom of the mold. On the other hand, the present inventors have studied to use an alumina substrate having a high thermal conductivity as the wiring substrate provided on the heat spreader in order to further enhance the heat dissipation.

However, the present inventors have found that the alumina substrate is weak in compressive force, and when the alumina substrate on the heat spreader is pressed by the pins provided in the mold, the alumina substrate may be cracked or crushed. I was revealed. Further, in transfer molding, it is difficult to delicately control clamp conditions and the like in the mold (die).

On the other hand, when the wiring board is provided on a part of the lead frame and the wiring board portion is sealed by transfer molding, the wiring board portion is only sandwiched by the mold around the lead frame. , It may be shaken up and down due to the flow of molten resin flowing into the cavity, and the loop part of the thin wire that connects the electrode of the semiconductor chip and the pad of the wiring board may appear on the surface of the sealing body after molding. A defective appearance may occur. Particularly under the current situation where the thickness of the sealing body is becoming thinner, partial exposure of the wire may pose a serious problem.

An object of the present invention is to provide a semiconductor device having a heat dissipation plate exposed on the surface of a sealing body, in which resin flash is less likely to occur on the exposed surface of the heat dissipation plate.

Another object of the present invention is to provide a semiconductor device in which a part of the object to be molded is not exposed on the surface of the sealing body.

Another object of the present invention is to provide a sealing (semiconductor device manufacturing) technique in which a resin flash is not generated on the exposed surface of the heat sink and a part of the object to be molded is not exposed on the surface of the sealing body. To provide.

The above and other objects and novel features of the present invention will be apparent from the description of the present specification and the accompanying drawings.

[0013]

The outline of the representative ones of the inventions disclosed in the present application will be briefly described as follows. That is, the hybrid integrated circuit device of the present invention includes a sealing body made of resin, leads extending inside and outside the sealing body, and a support plate connected to the part of the leads arranged in the resin. And a ceramic substrate fixed to the support plate and having a passive component, an active component, etc. mounted thereon, and a through hole connected to the support plate locally exists in the sealing body. In the manufacturing method, the sealing body is formed by transfer molding, and at the time of transfer molding, the support plate is locally clamped from above and below by the protrusions provided in the mold to perform the molding. Is configured. The hybrid integrated circuit device of the present invention has a structure in which a heat radiating plate, a part of which is exposed on the surface of the sealing body, is attached to a part of the ceramic substrate.

In the hybrid integrated circuit device according to another embodiment of the present invention, the through hole of the clamper is formed inside the through hole provided in the ceramic substrate without touching the ceramic substrate. The through hole is provided in an unused area of the ceramic substrate.

[0015]

According to the above-mentioned means, in the hybrid integrated circuit device of the present invention, the support plate for supporting the ceramic substrate on which the passive components, the active components, etc. are mounted is clamped from above and below by the protrusions at the time of transfer molding during the manufacturing thereof. In order to perform transfer molding by transfer molding, since the wiring board and the like are accurately positioned and transferred in the cavity in the mold of the transfer mold, a part of the object to be molded, for example, the electrodes of the semiconductor chip and the ceramic substrate A part of the wire connecting the pads is not exposed on the surface of the sealing body.

Further, in the hybrid integrated circuit device of the present invention, a heat radiating plate, one surface of which is exposed, is provided on the surface of the encapsulant. However, during transfer molding, the supporting plate for supporting the ceramic substrate is a protrusion. Since the resin is positioned from above and below, it is possible to prevent the resin from leaking to the exposed surface of the heat radiating plate during transfer molding, resulting in a hybrid integrated circuit device having high thermal conductivity.

Further, the hybrid integrated circuit device of the present invention is a hybrid integrated circuit device having excellent heat dissipation because a ceramic substrate having high thermal conductivity is used as the wiring substrate.

According to the method for manufacturing a hybrid integrated circuit device of the present invention, since the hard and brittle ceramic substrate is not clamped during transfer molding, the ceramic substrate is not damaged.

Further, in the hybrid integrated circuit device according to another embodiment of the present invention, the through hole of the clamper is formed inside the through hole provided in the ceramic substrate without touching the ceramic substrate. Not only can the ceramic substrate be prevented from being damaged by the pressure contact of the clamper, but the through hole is provided in an unused region of the ceramic substrate, so that the ceramic substrate can be increased in size even when clamped during transfer molding. It does not cause.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. 1 is a schematic cross-sectional view showing a main part of a hybrid integrated circuit device according to a first embodiment which is an embodiment of the present invention.
Is also a partial perspective view showing a main part of the hybrid integrated circuit device,
FIG. 3 is a schematic plan view showing a main part of a lead frame which is also used for manufacturing the hybrid integrated circuit device, and FIG. 4 is a schematic sectional view showing a transfer mold state in manufacturing the hybrid integrated circuit device.

Each of the hybrid integrated circuit devices of the present invention is manufactured by using a metal lead frame as in the case of manufacturing a monolithic IC. The hybrid integrated circuit device of one embodiment of the present invention, that is, the hybrid integrated circuit device 1 of the first embodiment has a structure as shown in FIGS. The hybrid integrated circuit device 1 is composed of a sealing body (package) 2 formed of a resin having a rectangular flat shape in appearance, and a plurality of leads 3 protruding from the periphery of the package 2. The package 2 has a thickness of about 3 mm.

The lead 3 extends inside and outside the package 2 and is of a gull wing type. The lead 3 is formed from the lead portion of the lead frame 4 shown in FIG. Also, inside the package 2, a support plate 5, which is also formed from the lead frame 4, is located. The support plate 5 is also called a tab, and is supported by a tab suspension lead 8 in the state of the lead frame 4.

The support plate 5 of the first embodiment has a rectangular frame body, and a ceramic substrate 9 having a thickness of about 0.6 mm is fixed to the main surface (upper surface). This ceramic substrate 9
Is made of an alumina substrate, and is a multilayer wiring substrate (not shown), and a semiconductor chip 10 made of an active component such as IC or LSI is fixed to the main surface (upper surface). The desired number of semiconductor chips 10 are mounted.
An upper surface electrode (not shown) of the semiconductor chip 10 and a wiring pad (not shown) on the upper surface of the ceramic substrate 9 are electrically connected by a conductive (Au) wire 11. Various passive components are mounted on the upper surface of the ceramic substrate 9. In FIG. 1, for example, a chip capacitor 12 is mounted.

On the other hand, although not shown in FIG. 1, connection pads are provided around the main surface of the ceramic substrate 9, and the connection pads and the inner ends of the leads 3 are conductive (Au).
Are electrically connected by a wire 13. The wire 1
Although not shown in FIG. 1 for convenience of description, reference numeral 3 electrically connects the connection pad (not shown) of the ceramic substrate 9 and the inner end portion of the lead 3 as shown in FIG.

The back surface (lower surface) of the ceramic substrate 9 is made of a metal having a good thermal conductivity such as copper.
A heat sink with a thickness of about 15 to 1.2 mm (heat.
The spreader 15 is adhesively fixed. This heat sink 1
One surface of 5, that is, the lower surface has the same height as the lower surface of the package 2 and is exposed from the package 2. This exposed surface becomes the heat dissipation surface 16. The ceramic substrate 9
Also has excellent thermal conductivity among wiring boards. As a result, the heat generated in the semiconductor chip 10 is radiated to the outside of the package 2 via the ceramic substrate 9 and the heat dissipation plate 15 having good thermal conductivity, and, for example, when mounted, the heat is directly transferred to the mother board or the chassis. Will be done.

On the other hand, this is one of the features of the present invention. As shown in FIGS. 1 and 2, through holes 20a and 20b are provided in the upper and lower portions of the package 2 correspondingly. The bottoms of the through holes 20a and 20b are connected to the support plate 5. That is, the bottoms of the through holes 20a and 20b are formed by the support plate 5. This is a through hole of a clamper formed by a protrusion having a circular cross section of the mold during transfer molding when forming the package 2. Since the atmosphere enters the through holes 20a and 20b, it also has a heat dissipation effect.

Next, the hybrid integrated circuit device 1 of the first embodiment.
The production will be described. In manufacturing the hybrid integrated circuit device 1, as shown in FIG. 3, a lead frame 4 is prepared. This lead frame 4 is 0.1 to 0.25 m
It is formed by patterning a metal plate having a thickness of m and made of a Fe—Ni based alloy, a Cu alloy, or the like by etching or precision pressing. Lead frame 4
Has a shape in which a plurality of unit lead patterns are arranged in series in one direction. The unit lead pattern is inside a frame formed by a pair of outer frames 26 extending in parallel and a pair of inner frames 27 connecting the pair of outer frames 26 and extending in a direction orthogonal to the outer frame 26. Is formed in.

Further, each outer frame 26 and inner frame 27 of the above frame.
A plurality of leads 3 extending parallel to each other and extending to the center of the frame are provided from the inside. This lead 3
It has a pattern that intersects with a thin dam 30 provided between the support pieces 29 protruding at the four corners of the frame. Each lead 3 is supported on the way by the dam 30. The dam 30 acts as a dam that prevents the melted resin from flowing out during transfer molding described later. Further, the cantilevered lead portion inside the dam 30 is called an inner lead, and the outside portion is called an outer lead. The tip of the inner lead is not particularly limited, but is deformed in a step shape. The outer frame 26 is provided with a guide hole (not shown). The guide hole is used as a guide for transferring and positioning the lead frame 4. It should be noted that the lead frame 4 is plated at desired locations as necessary.

In manufacturing the hybrid integrated circuit device 1, after the lead frame 4 is prepared, the ceramic substrate 9 is mounted and fixed on the support plate 5 as shown in FIG. Solder or an adhesive is used to fix the ceramic substrate 9. In FIG. 3, each component on the ceramic substrate 9 is omitted.

Next, the connection pads (not shown) provided around the ceramic substrate 9 and the inner end portions of the leads 3 are
It is electrically connected by a wire 13 made of u or the like.

Next, as shown in FIG. 4, a predetermined portion of the lead frame 4 is molded by the mold 32 of the transfer molding device. That is, as shown in FIG. 4, the lead frame 4 has a mold 32.
The mold is clamped between the lower mold 33 and the upper mold 34. By the mold clamping, the lower mold 33 and the upper mold 34 form the cavity 3
5, a runner 36, a gate 37 connecting the runner 36 and the cavity 35, etc. are formed.

This is one of the features of the present invention. The lower mold 33 and the upper mold 34 are provided (planted) with protrusions 33a, 34a made of an elastic body at corresponding portions.
Have been killed. In this example, as shown in FIG.
Two sets of 3a and 34a are provided, and both of them hold the support plate 5 (clamp). This clamp causes the support plate 5 and the ceramic substrate 9 to move into the cavity 35.
In the inside, it is not shaken up and down, and for example, the lower surface of the heat dissipation plate 15 fixed to the ceramic substrate 9 is in close contact with the bottom of the cavity 35, and the resin serves as the cavity bottom and the heat dissipation surface 16 of the heat dissipation plate 15. I try not to pour in between. As a result, after transfer molding,
The resin flash does not occur on the heat dissipation surface 16 of the heat dissipation plate 15.

Further, since the supporting plate 5, that is, the ceramic substrate 9 is always maintained at a constant height in the cavity 35 by the clamping operation, the semiconductor chip 1
0, the loop top portion of the wire 11 connecting the pad of the ceramic substrate 9 contacts the upper surface of the cavity 35,
It will never come close. As a result, in the hybrid integrated circuit device 1 after the transfer molding, the wire 11 is not exposed on the upper surface of the package 2 and the appearance of the wire 11 is not visible, and the appearance failure is suppressed.

In FIG. 3, the runner 36, the gate 37, the package 2, the flow cavity 40, and the air vent 41 are indicated by a chain double-dashed line in the order in which the resin flows.

The hybrid integrated circuit device of the first embodiment has the following effects.

(1) In the hybrid integrated circuit device of the first embodiment, a ceramic substrate having a high thermal conductivity is fixed on the heat dissipation plate, and a semiconductor chip having a high heat generating property is fixed on the ceramic substrate. Therefore, the heat generated in the semiconductor chip or the like is quickly dissipated to the outside of the package via the ceramic substrate and the heat dissipation plate, so that the operation of the hybrid integrated circuit device is stabilized. Therefore, a highly reliable hybrid integrated circuit device can be provided.

(2) Due to the above (1), in the hybrid integrated circuit device of the present invention, higher output can be achieved by improving heat dissipation.

(3) In the hybrid integrated circuit device of the first embodiment, since the heat radiation surface of the heat sink is exposed from the package surface, package cracking does not occur during solder reflow during mounting of the hybrid integrated circuit device.

(4) In the hybrid integrated circuit device of the present invention, a part of the object to be molded is clamped at the time of transfer molding, but the clamp location is not a hard and brittle ceramic substrate part, but a metal support plate for supporting the ceramic substrate. Since the ceramic substrate is clamped, damage to the ceramic substrate does not occur and the clamping pressure can be kept high.
It is possible to reliably hold the object to be molded in the cavity in the mold.

(5) According to the above (4), in the hybrid integrated circuit device of the present invention, the exposed surface of the heat dissipation plate can be brought into close contact with the bottom surface of the cavity of the mold during manufacturing. As a result, the melted resin during transfer molding is less likely to enter the heat sink and the bottom of the cavity, and a thin resin film (resin flash) is not formed on the exposed surface of the heat sink after transfer molding, and the heat transfer resistance is reduced. Therefore, it is possible to manufacture a hybrid integrated circuit device excellent in heat dissipation and heat dissipation. For example, the output of 1.0 WMAX of our conventional product became 2.0 W or more, which is twice that of the output due to the use of the ceramic substrate and heat sink.

(6) According to the above (4), in the hybrid integrated circuit device of the present invention, the ceramic substrate is clamped to the predetermined height via the supporting plate during the manufacturing, so that the wire is exposed on the surface of the package. In addition, the package form in which the wires can be viewed is eliminated, and the reliability and manufacturing yield of the hybrid integrated circuit device can be improved.

FIG. 5 is a partial sectional view showing a main part of a hybrid integrated circuit device according to a second embodiment which is another embodiment of the present invention. In this embodiment, a part of the hybrid integrated circuit device 1 manufactured by using a different shape material having different thickness as a lead frame is shown. The thick portion is used as the heat dissipation plate 15 as it is. And the heat sink 15
A portion of the support plate 5 which is detached from the ceramic substrate 9 fixed on the upper side is clamped by a pair of protrusions of a mold die at the time of transfer molding when the package is formed to form the package 2. Also in the case of the hybrid integrated circuit device 1 of the second embodiment,
Similar to the first embodiment, there is no resin flash on the heat radiating surface 16 of the heat radiating plate 15 and the heat radiating property is good. Further, it is possible to suppress the occurrence of defective products in which the wires are exposed on the package surface and the wires can be visually observed. Further, also in the hybrid integrated circuit device of the second embodiment,
Heat is dissipated from the through holes 20a and 20b formed in the package 2. In addition, in FIG. 5, parts on the ceramic substrate 9 are omitted.

FIG. 6 is a sectional view showing a main part of a hybrid integrated circuit device according to a third embodiment which is another embodiment of the present invention. In the hybrid integrated circuit device 1 of the third embodiment, if the support plate 5 is made larger than the ceramic substrate 9, the hybrid integrated circuit device becomes larger, so that the ceramic substrate 9 and the support plate 5 have the same size. A through hole 45 is provided in a portion that is not used as a circuit portion or the like.
Then, the projection 33a of the molding die 32 at the time of transfer molding is inserted into the through hole 45. In this case, the diameter of the protrusion 33a is made sufficiently smaller than that of the through hole 45 so that the protrusion 33a does not contact the ceramic substrate 9. This is to prevent the ceramic substrate 9 from being damaged by the protrusion 33a.

FIG. 7 is a sectional view showing a main part of a hybrid integrated circuit device according to a fourth embodiment which is another embodiment of the present invention. This embodiment is an example in which the present invention is applied to a general hybrid integrated circuit device 1 in which the support plate 5 has a flat structure and a heat sink is not attached to the back surface (lower surface). In the case of this embodiment, at the time of transfer molding, it is securely clamped by the protrusion of the mold die and set to a certain height of the cavity of the mold die, so that the wire is exposed on the package surface or the wire is visually inspected. The occurrence of such defective products can be suppressed.

FIG. 8 is a sectional view showing a main part of a hybrid integrated circuit device according to a fifth embodiment which is another embodiment of the present invention.
In this embodiment, it is a hybrid integrated circuit device 1 having a structure like TO220 type. That is, the ceramic substrate 9 is fixed on the heat sink 15, and active components (semiconductor chip 10) and passive components (chip capacitor 1) are mounted on the ceramic substrate 9.
2 etc.). And the heat sink 15
A plurality of leads 3 are provided in parallel on one side. The heat dissipation plate 15 is supported by one of the leads 3. Also in the manufacture of the hybrid integrated circuit device 1, deformed materials having partially different thicknesses are used. In the TO220 type structure in which one surface of the heat dissipation plate is exposed, one side of the heat dissipation plate 15 is clamped by the lower mold 33 and the upper mold 34 of the mold mold 32 shown by the two-dot chain line as shown in FIG. , The other is clamped only at the lead 3 part. Therefore, in the case of the fifth embodiment, the protrusion 34a of the upper mold 34 and the lower mold 3 are
3, the transfer surface 16 of the heat dissipation plate 15 is pressed against the bottom of the cavity 35 for transfer molding. Also in the case of the fifth embodiment, as in the above-mentioned respective embodiments, the ceramic substrate 9 is prevented from being damaged, and the resin flash is prevented from adhering to the heat dissipation surface 16 of the heat dissipation plate 15.
In addition, it is possible to prevent the wires from being exposed on the surface of the package and the occurrence of defective products in which the wires are visible.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say, for example,
Moisture resistance can be improved if the through holes 20a and 20b are closed with emphasis on resin or the like.

[0047]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows. The hybrid integrated circuit device of the present invention is manufactured using a lead frame. A support plate composed of a rectangular frame is located inside the package, and a ceramic substrate on which active components and passive components are mounted is fixed on the support plate. Further, a heat radiating plate whose one surface is exposed from the package is attached to the back (lower surface) of the ceramic substrate. At the time of transfer molding in the manufacture of the hybrid integrated circuit device, the support plate is locally clamped from above and below by the protrusions provided in advance in the mold to perform the molding. As a result, since the heat radiation surface of the heat radiation plate and the bottom of the cavity formed by the mold are brought into close contact with each other, resin flash does not occur on the heat radiation surface of the heat radiation plate, and the product has good heat radiation performance. Further, since the ceramic substrate is positioned at a predetermined height in the cavity via the support plate, it is possible to suppress the occurrence of defective products such that the wires are exposed on the surface of the package or the wires can be visually observed. The manufacturing yield is also improved.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a main part of a hybrid integrated circuit device according to a first embodiment which is an embodiment of the present invention.

FIG. 2 is a partial perspective view showing a main part of the hybrid integrated circuit device according to the first embodiment.

FIG. 3 is a schematic plan view showing a main part of a lead frame used for manufacturing the hybrid integrated circuit device according to the first embodiment.

FIG. 4 is a schematic cross-sectional view showing a transfer mold state in manufacturing the hybrid integrated circuit device according to the first example.

FIG. 5 is a partial cross-sectional view showing a main part of a hybrid integrated circuit device according to a second embodiment which is another embodiment of the present invention.

FIG. 6 is a sectional view showing a main part of a hybrid integrated circuit device according to a third embodiment which is another embodiment of the present invention.

FIG. 7 is a sectional view showing a main part of a hybrid integrated circuit device according to a fourth embodiment which is another embodiment of the present invention.

FIG. 8 is a sectional view showing a main part of a hybrid integrated circuit device according to a fifth embodiment which is another embodiment of the present invention.

[Explanation of symbols]

1 ... Hybrid integrated circuit device, 2 ... Sealing body (package), 3
... lead, 4 ... lead frame, 5 ... support plate, 8 ... tab suspension lead, 9 ... ceramic substrate, 10 ... semiconductor chip, 11 ... wire, 12 ... chip capacitor, 13 ... wire, 15 ... radiating plate, 16 ... radiating Surface, 20a, 20b ...
Through hole, 26 ... Outer frame, 27 ... Inner frame, 29 ... Support piece, 32
... Mold type, 33 ... Lower mold, 33a ... Protrusion, 34 ... Upper mold, 34a ... Protrusion, 35 ... Cavity, 36 ... Runner, 37 ... Gate, 40 ... Flow cavity, 41 ... Air vent, 45 ... Through hole .

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display location H01L 23/50 G

Claims (4)

[Claims] 1. A sealing body made of a resin, leads extending inside and outside the sealing body, a support plate arranged in the resin and connected to the part of the leads, and the support plate. A hybrid integrated circuit device having a fixed ceramic substrate on which passive components, active components, etc. are mounted, wherein the encapsulant is formed by transfer molding, and a part of the encapsulant is used during transfer molding. A hybrid integrated circuit device having a through hole for a clamper that clamps a support plate from above and below. 2. The hybrid integrated circuit device according to claim 1, wherein the through hole of the clamper is formed inside a through hole provided in the ceramic substrate without touching the ceramic substrate. 3. The hybrid integrated circuit according to claim 1, wherein a heat radiating plate, a part of which is exposed on the surface of the sealing body, is attached to a part of the ceramic substrate. apparatus. 4. A sealing body made of resin, leads extending inside and outside of the sealing body, a support plate connected to the part of the leads arranged in the resin, and the support plate. A method of manufacturing a hybrid integrated circuit device, comprising: a ceramic substrate that is fixed and has a passive component, an active component, etc. mounted therein, and a through hole that is connected to the support plate locally exists in the sealing body. The encapsulant is formed by transfer molding, and at the time of transfer molding, the support plate is locally clamped from above and below by a protrusion provided in the mold to perform molding. Manufacturing method.