JPH07231239A - Surface acoustic wave device - Google Patents

Surface acoustic wave device

Info

Publication number
JPH07231239A
JPH07231239A JP4060094A JP4060094A JPH07231239A JP H07231239 A JPH07231239 A JP H07231239A JP 4060094 A JP4060094 A JP 4060094A JP 4060094 A JP4060094 A JP 4060094A JP H07231239 A JPH07231239 A JP H07231239A
Authority
JP
Japan
Prior art keywords
acoustic wave
surface acoustic
cap
substrate
piezoelectric substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4060094A
Other languages
Japanese (ja)
Inventor
Osamu Sato
収 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP4060094A priority Critical patent/JPH07231239A/en
Publication of JPH07231239A publication Critical patent/JPH07231239A/en
Pending legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To obtain a surface acoustic wave device in which miniaturization and low cost are realized by adhering a cap to a surrounding face of a surface acoustic wave element where IDT electrode conductors are formed on a piezoelectric substrate. CONSTITUTION:A cap 6 is adhered to a surface acoustic wave element where interdigital transducer (IDT) electrodes 2 are formed on a piezoelectric substrate 1 by using a sealing agent 5. Through the constitution above, no package is required and no package mount work is required, then miniaturization and low cost are realized. Furthermore, the cap 6 is preferably made up of a substrate 3 made of the same material as that of the piezoelectric substrate 1 whose size is selected so that part of a terminal 2' of the IDT electrode conductor 2 is exposed externally and made up of a metallic plating section 4 applied to a surrounding face of the substrate 3 to form a recessed space 12 to a part corresponding to the IDT electrode conductor 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、通信機器等の電子部品
として用いられる弾性表面波素子に関し、特に、気密封
止された弾性表面波装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave element used as an electronic component of a communication device or the like, and more particularly to a surface acoustic wave device hermetically sealed.

【0002】[0002]

【従来の技術】図4は従来の弾性表面波装置の1例を示
す説明図であり、(A)はキャップ(上蓋)23を外し
たときの平面図、(B)は(A)のB−B’断面図であ
る。図において、20は弾性表面波素子であり、ニオブ
酸リチウム(LiNb 3)またはタンタル酸リチウム
(LiTaO3 )等の圧電基板上にIDT(インターデ
ィジタルトランスデューサ)が形成されている。21は
リード線、22はベース、23はキャップ、24は外部
接続端子部を示している。弾性表面波素子20は、基板
表面を弾性表面波が伝搬するため、その表面に異物や湿
気等の付着があると素子特性が変化してしまう。このた
め、図に示すように、弾性表面波素子20は、ベース2
2に搭載され外部接続端子部24にリード線21で接続
された後、キャップ23で窒素ガス等の不活性ガスを注
入して気密封止される。このような弾性表面波装置は、
他の電子部品と同様に高密度実装化によって小形化の要
求が強くなっている。
2. Description of the Related Art FIG. 4 is an explanatory view showing an example of a conventional surface acoustic wave device. (A) is a plan view when a cap (upper lid) 23 is removed, and (B) is B of (A). It is a -B 'sectional view. In the figure, reference numeral 20 denotes a surface acoustic wave element, in which an IDT (interdigital transducer) is formed on a piezoelectric substrate such as lithium niobate (LiN b O 3 ) or lithium tantalate (LiTaO 3 ). Reference numeral 21 is a lead wire, 22 is a base, 23 is a cap, and 24 is an external connection terminal portion. Since the surface acoustic wave propagates on the surface of the substrate in the surface acoustic wave element 20, if foreign matter or moisture adheres to the surface, the element characteristics will change. Therefore, as shown in FIG.
After being mounted on No. 2 and connected to the external connection terminal portion 24 by the lead wire 21, an inert gas such as nitrogen gas is injected by the cap 23 and hermetically sealed. Such a surface acoustic wave device,
As with other electronic components, there is a strong demand for miniaturization due to high-density mounting.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記従
来の弾性表面波装置では、ベース22に外部接続端子部
24を設ける必要があり、また、その外部接続端子部2
4に弾性表面波素子のIDTからリード線21を接続し
なければならず、弾性表面波素子の大きさに対してベー
ス22とキャップ23からなるパッケージがかなり大き
くなるという問題があった。さらに、パッケージ実装作
業に時間がかかりコストダウンの障害になるという問題
があった。本発明の目的は、上記問題点を解決し、小形
化とコストダウンを実現した弾性表面波装置を提供する
ことにある。
However, in the above-described conventional surface acoustic wave device, it is necessary to provide the external connection terminal portion 24 on the base 22, and the external connection terminal portion 2 is provided.
4, the lead wire 21 has to be connected from the IDT of the surface acoustic wave element, and there is a problem that the package including the base 22 and the cap 23 becomes considerably larger than the size of the surface acoustic wave element. Further, there is a problem that the package mounting work takes time and becomes an obstacle to cost reduction. It is an object of the present invention to provide a surface acoustic wave device that solves the above problems and realizes downsizing and cost reduction.

【0004】[0004]

【課題を解決するための手段】本発明の弾性表面波装置
は、方形の圧電基板上にインターディジタルトランスデ
ューサ電極導体が形成された弾性表面波素子と、該弾性
表面波素子の前記インターディジタルトランスデューサ
電極導体を除く周囲面で接合されたキャップからなるこ
とを特徴とするものである。
The surface acoustic wave device of the present invention is a surface acoustic wave element having an interdigital transducer electrode conductor formed on a rectangular piezoelectric substrate, and the interdigital transducer electrode of the surface acoustic wave element. It is characterized in that it is composed of a cap joined to the peripheral surface excluding the conductor.

【0005】さらに、前記キャップは、前記圧電基板と
同じ材質で前記インターディジタルトランスデューサ電
極導体の端子部分の一部が外部に露出する外形寸法の基
板と、前記インターディジタルトランスデューサ電極導
体に対応する部分に凹状空間部を形成するために該基板
の前記周囲面に施された金属めっきからなることを特徴
とするものである。
Further, the cap is formed of a material having the same material as that of the piezoelectric substrate and having an outer dimension in which a part of a terminal portion of the interdigital transducer electrode conductor is exposed to the outside, and a portion corresponding to the interdigital transducer electrode conductor. It is characterized in that it is made of metal plating applied to the peripheral surface of the substrate to form a concave space portion.

【0006】[0006]

【実施例】図1は本発明の実施例を示す構造図であり、
(A)は分解斜視図、(B)は組立外観斜視図である。
図において、1は圧電基板、2はIDT電極、2’はそ
の端子部分、3はキャップの基板、4はメッキ部、5は
封止剤、12は凹状空間部、6はキャップである。本発
明の弾性表面波装置は、表面にIDT電極導体2が形成
された圧電基板1とキャップ6からなり、キャップ6の
基板3は圧電基板1と同一の素材で形成され、その底面
外周部に封止剤5として低融点ガラス等をスクリーン印
刷等で塗布しておき、圧電基板1のIDT2が形成され
ている面に重ね合わせて焼成し、圧電基板1とキャップ
6を気密封止する。このとき、凹状空間部12には窒素
(N2 )ガス等の不活性ガスを封入する。キャップ6の
形状は弾性表面波素子のIDT2の端子部分2’が外部
に露出するような寸法に形成される。
1 is a structural diagram showing an embodiment of the present invention,
(A) is an exploded perspective view, (B) is an assembly appearance perspective view.
In the figure, 1 is a piezoelectric substrate, 2 is an IDT electrode, 2'is a terminal portion thereof, 3 is a substrate of a cap, 4 is a plated portion, 5 is a sealant, 12 is a concave space portion, and 6 is a cap. The surface acoustic wave device of the present invention comprises a piezoelectric substrate 1 on the surface of which an IDT electrode conductor 2 is formed, and a cap 6. The substrate 3 of the cap 6 is made of the same material as the piezoelectric substrate 1, and has a bottom outer peripheral portion. A low-melting point glass or the like is applied as a sealing agent 5 by screen printing or the like, and is superposed on the surface of the piezoelectric substrate 1 on which the IDT 2 is formed and baked to hermetically seal the piezoelectric substrate 1 and the cap 6. At this time, the concave space 12 is filled with an inert gas such as nitrogen (N 2 ) gas. The shape of the cap 6 is formed so that the terminal portion 2'of the IDT 2 of the surface acoustic wave element is exposed to the outside.

【0007】次に、キャップ6の作成方法、および圧電
基板1への貼付方法について説明する。図2は本発明の
キャップ6を複数個連接して形成した短冊状キャップ列
11の部分外観斜視図である。すなわち、短冊状キャッ
プ列11は、キャップ6が複数個連なった切断(ダイシ
ング)前の状態をいう。12は凹状の空間部である。図
3は多数の弾性表面波素子を形成したウェハ10の上に
短冊状キャップ列11を取付けた状態の外観図であり、
(A)は平面図、(B)はA−A’断面図である。図に
おいて、10は圧電基板のウエハ、11は短冊状キャッ
プ列、5は接着剤などの封止剤、4はメッキ部、12は
凹状空間部を示す。
Next, a method of forming the cap 6 and a method of attaching the cap 6 to the piezoelectric substrate 1 will be described. FIG. 2 is a partial external perspective view of a strip-shaped cap row 11 formed by connecting a plurality of caps 6 of the present invention. That is, the strip-shaped cap row 11 is in a state before cutting (dicing) in which a plurality of caps 6 are connected. Reference numeral 12 is a concave space portion. FIG. 3 is an external view showing a state in which the strip-shaped cap row 11 is mounted on the wafer 10 on which a large number of surface acoustic wave elements are formed.
(A) is a plan view and (B) is a sectional view taken along line AA '. In the figure, 10 is a wafer of a piezoelectric substrate, 11 is a strip-shaped cap row, 5 is a sealant such as an adhesive, 4 is a plated portion, and 12 is a concave space portion.

【0008】まず、キャップ列11の作成方法について
説明する。図2において、短冊状キャップ列11は、圧
電基板1と熱膨張係数の等しい材質の細長い短冊状の基
板3に、空間部12を残して例えば銅(Cu)などの金
属を蒸着,またはスパッタした後、めっき4を施すこと
によって凹状空間部12を形成する。
First, a method of forming the cap row 11 will be described. In FIG. 2, the strip-shaped cap row 11 is formed by evaporating or sputtering a metal such as copper (Cu) on the elongated strip-shaped substrate 3 made of a material having the same thermal expansion coefficient as that of the piezoelectric substrate 1 while leaving the space 12. Thereafter, plating 4 is applied to form the concave space portion 12.

【0009】次に、キャップ列11のウエハ10への貼
付方法について説明する。図3において、短冊状キャッ
プ列11は、めっきを施した凹状空間部12の外周部に
接着剤5として低融点ガラス等をスクリーン印刷等によ
り塗布する。そして、接着面を下にして、IDTが形成
された圧電基板ウエハ10と重ね合わせ、加熱して接着
剤5を溶融させ、気密封止する。この時封止される空間
部12には窒素(N2 )ガス等の不活性ガスが封止され
る。
Next, a method of attaching the cap row 11 to the wafer 10 will be described. In FIG. 3, in the strip-shaped cap row 11, a low melting point glass or the like is applied as an adhesive 5 to the outer peripheral portion of the plated concave space portion 12 by screen printing or the like. Then, with the adhesive surface facing down, the piezoelectric substrate wafer 10 on which the IDT is formed is stacked and heated to melt the adhesive agent 5 and hermetically seal it. At this time, the space 12 to be sealed is sealed with an inert gas such as nitrogen (N 2 ) gas.

【0010】このようにして多数の弾性表面波素子を作
り込んだウエハをキャップ列と共にダイシングすること
により弾性表面波装置を一つ一つ切り出す。本発明によ
り、従来必要としていたパッケージが不要となるためパ
ッケージング作業がなくなり、低コストで弾性表面波装
置を提供することができる。さらに、外形寸法は弾性表
面波素子チップとほぼ同一の底面積となるため、従来に
比較して大幅に小形化することができる。
The surface acoustic wave device is cut out one by one by dicing the wafer in which a large number of surface acoustic wave elements are formed in this way together with the cap row. According to the present invention, a package which has been conventionally required is not required, so that the packaging work is eliminated and the surface acoustic wave device can be provided at low cost. Further, since the external dimensions are almost the same as the surface area of the surface acoustic wave element chip, the size can be greatly reduced as compared with the conventional one.

【0011】[0011]

【発明の効果】以上詳細に説明したように、本発明を実
施することにより、低コストで小形化された弾性表面波
装置を得ることができ、実用上の効果は大きい。
As described in detail above, by implementing the present invention, it is possible to obtain a small-sized surface acoustic wave device at low cost, and the practical effect is great.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例の構造を示す分解斜視図(A)
と外観斜視図(B)である。
FIG. 1 is an exploded perspective view showing a structure of an embodiment of the present invention (A).
It is an external perspective view (B).

【図2】本発明の短冊状キャップ列の部分外観図であ
る。
FIG. 2 is a partial external view of a strip-shaped cap row of the present invention.

【図3】本発明の短冊状キャップ列取付け後のウェハ平
面図(A)とA−A’断面図(B)である。
FIG. 3 is a plan view of the wafer (A) and an AA ′ cross-sectional view (B) after the strip-shaped cap row of the present invention is attached.

【図4】従来装置の平面図とBB’断面図である。FIG. 4 is a plan view and a BB ′ cross-sectional view of a conventional device.

【符号の説明】[Explanation of symbols]

1 圧電基板 2 IDT電極導体 2’ IDTの端子部分 3 キャップの基板 4 めっき部 5 封止剤 6 キャップ 10 ウエハ 11 短冊状キャップ列 12 凹状空間部 20 弾性表面波素子 21 リード線 22 ベース 23 キャップ 24 外部接続端子部 1 Piezoelectric Substrate 2 IDT Electrode Conductor 2'IDT Terminal Part 3 Cap Substrate 4 Plated Part 5 Sealant 6 Cap 10 Wafer 11 Strip Cap Row 12 Recessed Space 20 Surface Acoustic Wave Element 21 Lead Wire 22 Base 23 Cap 24 External connection terminal

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 方形の圧電基板上にインターディジタル
トランスデューサ電極導体が形成された弾性表面波素子
と、 該弾性表面波素子の前記インターディジタルトランスデ
ューサ電極導体を除く周囲面で接合されたキャップから
なる弾性表面波装置。
1. An elastic structure comprising a surface acoustic wave element having an interdigital transducer electrode conductor formed on a rectangular piezoelectric substrate and a cap joined to the surface of the surface acoustic wave element excluding the interdigital transducer electrode conductor. Surface wave device.
【請求項2】 前記キャップは、前記圧電基板と同じ材
質で前記インターディジタルトランスデューサ電極導体
の端子部分の一部が外部に露出する外形寸法の基板と、
前記インターディジタルトランスデューサ電極導体に対
応する部分に凹状空間部を形成するために該基板の前記
周囲面に施された金属めっきからなることを特徴とする
請求項1記載の弾性表面波装置。
2. A substrate having the outer dimensions of the cap, which is made of the same material as that of the piezoelectric substrate, such that a part of a terminal portion of the interdigital transducer electrode conductor is exposed to the outside.
2. The surface acoustic wave device according to claim 1, wherein the surface acoustic wave device is made of metal plating applied to the peripheral surface of the substrate to form a concave space in a portion corresponding to the interdigital transducer electrode conductor.
JP4060094A 1994-02-16 1994-02-16 Surface acoustic wave device Pending JPH07231239A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4060094A JPH07231239A (en) 1994-02-16 1994-02-16 Surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4060094A JPH07231239A (en) 1994-02-16 1994-02-16 Surface acoustic wave device

Publications (1)

Publication Number Publication Date
JPH07231239A true JPH07231239A (en) 1995-08-29

Family

ID=12585010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4060094A Pending JPH07231239A (en) 1994-02-16 1994-02-16 Surface acoustic wave device

Country Status (1)

Country Link
JP (1) JPH07231239A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100380616C (en) * 2003-03-10 2008-04-09 因芬尼昂技术股份公司 Electronic device with empty chamby and its producing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100380616C (en) * 2003-03-10 2008-04-09 因芬尼昂技术股份公司 Electronic device with empty chamby and its producing method

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