JPH06118623A - Reticle and semiconductor aligner using the same - Google Patents

Abstract

PURPOSE:To improve not only resolution but the depth of focus for various kinds of patterns. CONSTITUTION:A glass substrate is coated with a light shielding body 34 except a pattern part, and an X direction linear pattern 30x and a Y direction linear pattern 30y whose longitudinal directions mutually form a right angle are formed. As to the pattern 30x, a transmissive axis transmits X polarized light LX in a direction X and does not transmit Y polarized light LY in a direction Y. As to the pattern 30y, Y polarized light LY is transmitted and the X polarized light LX is not transmitted. The surface of a reticle 30 is irradiated with X polarized light LX from an oblique direction and a direction at a right angle to the direction X, and the surface of the reticle 30 is irradiated with the Y polarized light LY from the oblique direction and a direction at a right angle to the direction Y.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reticle and a semiconductor exposure apparatus using the reticle.

[0002]

2. Description of the Related Art Along with the progress of pattern miniaturization of semiconductor integrated circuits, higher resolution reticles and semiconductor exposure apparatuses are required. The resolution of the projection optical system of the semiconductor exposure apparatus is proportional to the wavelength of light and inversely proportional to the numerical aperture of the projection lens.

For example, i-line of a mercury lamp (wavelength 0.365 μm) is mainly used for forming a pattern having a width of about 0.5 μm. Development is currently underway to improve resolution by using a shorter wavelength excimer laser as the light source.
Major changes in materials and equipment will be required, and multi-faceted development will be required. Further, when the numerical aperture of the projection lens is increased to improve the resolution, there is a problem that the depth of focus is reduced.

Therefore, a method of improving both the resolution and the depth of focus while using the i-line of a mercury lamp is being developed. As one of such methods, an oblique incidence illumination method for a reticle has been proposed.

As shown in FIG. 12A, the reticle 11
On the other hand, when light is vertically incident to illuminate and the transmitted light is projected and exposed on the resist on the semiconductor substrate by the projection lens 12, 0th-order and ± 1st-order diffracted lights are imaged. On the other hand, as shown in FIG. 12B, when light is obliquely incident on the reticle 11 to illuminate it, only the 0th-order, 1st-order, or −1st-order diffracted light is imaged by the projection lens 12. Therefore, both the depth of focus and the resolution are improved.

[0006]

However, as shown in FIG. 13, a linear pattern 1 in the X direction shown on the reticle 11 is formed.
1x and a linear pattern 11y in the Y direction shown are formed,
When light is irradiated from a direction oblique to the surface of the reticle 11 and at a right angle to the X-direction linear pattern 11x, the resolution and depth of focus of the pattern image of the X-direction linear pattern 11x are improved. The effect of such improvement cannot be obtained.

In view of such problems, an object of the present invention is to provide a reticle capable of improving both resolution and depth of focus for various patterns and a semiconductor exposure apparatus using the reticle.

[0008]

A reticle and a semiconductor exposure apparatus using the reticle according to the present invention will be described with reference to corresponding components in the drawings.

In the first invention, as shown in FIG. 1 and FIG. 4, for example, a light shield 34 is applied on the transparent substrate 30 except for the pattern portion, and the longitudinal direction is perpendicular to the X direction linear pattern 30x and the Y direction. In the reticle on which the linear pattern 30y is formed, the first polarization selection is formed in the vicinity of the transparent substrate 30 of the X-direction linear pattern 30x in parallel with the transparent substrate 30 and transmits the first polarized light LX and does not transmit the second polarized light LY. And a second polarized light selecting unit that is formed in the vicinity of the transparent substrate 30 of the Y-direction linear pattern 30y in parallel with the transparent substrate 30 and that transmits the second polarized light LY and does not transmit the first polarized light LX.

In the semiconductor exposure apparatus according to the second aspect of the invention, for example, as shown in FIGS.
First polarized light irradiation means 13-18, 19A, 19B, 20, 21 for irradiating the reticle 30 with the first polarized light LX from a direction oblique to the surface of the reticle 30 and perpendicular to the X direction.
And the second polarized light irradiation means 13 to 18, 19C, 19D, 2 for irradiating the reticle 30 with the second polarized light LY obliquely to the surface of the reticle 30 and perpendicular to the Y direction.
Projection lens 1 for projecting 0, 21 and the pattern on the reticle 30 onto a semiconductor substrate on which a photoresist is applied.
2 is provided.

According to the first and second aspects of the present invention, the X-direction linear pattern 30x transmits only the first polarized light LX from the direction oblique to the surface of the reticle 30 and perpendicular to the X-direction, and in the Y-direction. Only the second polarized light LY is transmitted through the linear pattern 30y from a direction oblique to the surface of the reticle 30 and perpendicular to the Y direction. Therefore, a pattern image with improved resolution and depth of focus can be obtained on the photoresist on the semiconductor substrate 10.

In the third invention, as shown in FIGS. 11 and 4, for example, a first light-blocking linear pattern 40 is formed by applying a light-shielding member 34 on a transparent substrate except a pattern portion and bending at a right angle.
a and the second folding linear pattern 40b are formed, and one side of the first folding linear pattern 40a forms an angle of 45 ° with one side of the second folding linear pattern 40b, in the vicinity of the transparent substrate of the first folding linear pattern 40a. First polarization selecting means formed parallel to the transparent substrate and transmitting the first polarized light LX and not transmitting the second polarized light LY, and parallel to the transparent substrate near the transparent substrate of the second folding linear pattern 40b. 2 polarization L
And a second polarized light selecting unit that transmits Y but does not transmit the first polarized light LX.

In the reticle and the semiconductor exposure apparatus using the reticle according to the fourth aspect of the present invention, for example, as shown in FIG. 11, the reticle 40 having the above-described structure and the first fold linear pattern 40a oblique to the surface of the reticle 40 are provided. The first polarized light LX is read from the reticle 4 in the direction in which the angles formed by the respective sides are the same.
The second polarized light L from the first polarized light irradiating means for irradiating 0 to the surface of the reticle 40 and the two angles of the two sides of the second folded linear pattern 40b are the same.
The reticle 40 is provided with a second polarized light irradiating means for irradiating the reticle 40 with Y, and a projection lens for projecting the pattern on the reticle 40 onto the semiconductor substrate on which the photoresist is adhered.

According to the third and fourth aspects of the present invention, the first folding linear pattern 40a is oblique to the surface of the reticle 40 and the two sides of the first folding linear pattern 40a form an angle with each other. Only the first polarized light LX is transmitted from the same direction, and the second folding linear pattern 40b is oblique to the surface of the reticle 40 and has the same angle with each of the two sides of the second folding linear pattern 40b. Only the second polarized light LY is transmitted from the direction. Therefore, a pattern image with improved resolution and depth of focus can be obtained on the photoresist on the semiconductor substrate.

In the first aspect of the first invention or the third invention, for example, as shown in FIG. 4, the first polarization selecting means has a first polarizing plate 32X and a second polarizing plate 32Y whose transmission axes are parallel to each other.
And a half-wave plate 33 arranged between the first polarizing plate 32X and the second polarizing plate 32Y in parallel therewith, and the second polarization selecting means comprises the first polarizing plate 32X.

In the second aspect of the first invention or the third invention, for example, as shown in FIG.
It comprises a wave plate 33 and a polarizing plate 32Y arranged in parallel with the ½ wavelength plate 33, and the second polarization selecting means comprises a polarizing plate 32Y.

In the third aspect of the first invention or the third invention, for example, as shown in FIG. 6, the first polarization selecting means comprises a first polarizing plate 32X, and the second polarization selecting means has a transmission axis. A second polarizing plate 32Y perpendicular to the transmission axis of the first polarizing plate 32X
The light shield 34 is composed of a portion where the first polarizing plate 32X and the second polarizing plate 32Y overlap each other.

In the fourth aspect of the first invention or the third invention, for example, as shown in FIG.
It comprises a wave plate 33 and a polarizing plate 32Y arranged in parallel with the ½ wavelength plate 33, and the second polarization selecting means comprises a polarizing plate 32Y and a ¼ wavelength arranged in parallel with the polarizing plate 32Y. And a plate 35.

[0019]

Embodiments of the present invention will be described below with reference to the drawings.

[First Embodiment] FIG. 2 shows an optical system of a semiconductor exposure apparatus.

The light emitted from the light source 13 is parabolic mirror 14.
Are collimated, and one of the bright line spectrum light is transmitted through the filter 15 to be monochromatic. For example, the light source 13 is a mercury lamp, and this monochromatic light is i-line. The monochromatic light is reflected by the mirror 16, passes through the fly-eye lens 17, and the light intensity distribution is made uniform. An aperture 18 is arranged in front of the fly-eye lens 17.

This aperture 18 is, as shown in FIG.
A pair of openings 18a and 18b are formed on the upper and lower sides and a pair of openings 18c and 18d are formed on the left and right sides in order to obliquely illuminate the reticle from four directions. The openings 18a and 18b are polarizing plates 1 whose transmission axes are parallel to each other.
9A and 19B, and the openings 18c and 18d are covered with polarizing plates 19C and 19D whose transmission axes are parallel to each other and perpendicular to the transmission axes of the polarizing plates 19A and 19B. Light passing through these polarizing plates 19A to 19C is reflected by a mirror 20, refracted by a condenser lens 21, and obliquely illuminated onto a reticle 30 from four directions, as shown in FIG.

22A, 22B, 22C and 2 shown in FIG.
2D are the polarizing plates 19A and 19A of the aperture 18, respectively.
A cross section of a light beam incident on the reticle 30 from four directions through B, 19C, and 19D is shown. The incident angles of the respective light beams with respect to the X-direction linear pattern 30x formed in the central portion of the semiconductor wafer 10 are both the same angle θ. The linear pattern 30x is in the X direction in the drawing, and a linear pattern 30y in the Y direction, which is perpendicular to the linear pattern 30x, is also formed on the reticle 30. An example of the structure of the reticle 30 is shown in FIG.
Shown as A.

In this reticle 30A, a polarizing plate (thin film) 32Y having a transmission axis in the Y direction is attached to the entire upper surface of a glass substrate 31. On the polarizing plate 32Y, a polarizing plate 32X having a transmission axis in the X direction is attached via a half-wave plate 33 except for the Y-direction linear pattern 30y and the vicinity thereof.
The light shield (thin film) 34 is deposited on the polarizing plate 32X except for the X-direction linear pattern 30x, and is deposited on the polarizing plate 32Y except for the Y-direction linear pattern 30y.

In this case, the transmission part of the X-direction linear pattern 30x is composed of the glass substrate 31, the polarizing plate 32Y, the half-wave plate 33 and the polarizing plate 32X, and the Y-direction linear pattern 3 is formed.
The transmission part of 0y is composed of the glass substrate 31 and the polarizing plate 32Y.

When the polarized light whose electric vector vibration directions are the X-direction and the Y-direction are X-polarized light LX and Y-polarized light LY, respectively,
In the portion of the X-direction linear pattern 30x, the X-polarized light LX is
After passing through the polarizing plate 32X and the half-wave plate 33, Y
The polarized light LY is transmitted through the polarizing plate 32Y and the glass substrate 31, but the Y polarized light LY cannot be transmitted through the polarizing plate 32X. On the other hand, in the Y direction linear pattern 30y, the X polarized light LX cannot pass through the polarizing plate 32Y, but the Y polarized light LY passes through the polarizing plate 32Y and the glass substrate 31.

Therefore, as shown in FIG. 1, in the X-direction linear pattern 30x, only the X-polarized light LX in the direction oblique to the surface of the reticle 30 and in the direction perpendicular to the X-direction linear pattern 30x is transmitted, and the Y-direction linear pattern 30y. Only the Y-polarized light LY in the direction oblique to the surface of the reticle 30 and perpendicular to the Y-direction linear pattern 30y is transmitted. Therefore, a pattern image with improved resolution and depth of focus can be obtained on the photoresist on the semiconductor wafer 10.

[Second Embodiment] FIG. 5 shows the reticle 3 of FIG.
A configuration example of 0 is shown as the reticle 30B of the second embodiment.

In this reticle 30B, a half-wave plate 33 is attached to the lower surface of the glass substrate 31 in the vicinity of the X-direction linear pattern 30x, and the X-direction linear pattern 30x is removed from the half-wave plate 33. The light shield 34 is attached, and the light shield 34 is attached to a portion other than the half-wave plate 33 on the lower surface of the glass substrate 31 and other than the Y-direction linear pattern 30y. The glass substrate 31 is parallel to the glass substrate 31 and
A polarizing plate 32Y is arranged in the vicinity of.

In this case, the transparent portion of the X-direction linear pattern 30x includes the glass substrate 31, the half-wave plate 33, and the polarizing plate 3.
2Y, and the transmissive portion of the Y-direction linear pattern 30y includes the glass substrate 31 and the polarizing plate 32Y.

In the portion of the X-direction linear pattern 30x, X
The polarized light LX is transmitted through the glass substrate 31, and the half-wave plate 3
3 and becomes Y polarized light LY, which then passes through the polarizing plate 32Y. The Y-polarized light LY includes the glass substrate 31 and the half-wave plate 3
3, but cannot pass through the polarizing plate 32Y. on the other hand,
In the Y-direction linear pattern 30y, the X-polarized light LX cannot pass through the polarizing plate 32Y, but the Y-polarized light LY does not pass through the polarizing plate 32Y.
Transmit Y.

Therefore, the same effect as that of the first embodiment can be obtained.

The polarizing plate 32Y may be attached to the entire upper surface of the glass substrate 31. Further, the half-wave plate 33 may be attached on the light shield 34 after the light shield 34 is attached to the lower surface of the glass substrate 31.

[Third Embodiment] FIG. 6 shows the reticle 3 of FIG.
A configuration example of 0 is shown as a reticle 30C of the third embodiment.

In this reticle 30C, the polarizing plate 3 is provided on the upper surface of the glass substrate 31 except the Y-direction linear pattern 30y.
2X is applied, and the polarizing plate 32Y is formed on the glass substrate 31 and the polarizing plate 32X except the X-direction linear pattern 30x.
Is being worn.

In this case, since the X-polarized light LX and the Y-polarized light LY do not pass through the portion where the polarizing plate 32X and the polarizing plate 32Y overlap each other, the light shield 34A is formed. The transparent portion of the X-direction linear pattern 30x includes a glass substrate 31 and a polarizing plate 32.
The X-direction linear pattern 30y includes a glass substrate 31 and a polarizing plate 32Y.

As can be seen, the X-direction linear pattern 30
In the x portion, the X polarized light LX is transmitted but the Y polarized light LY cannot be transmitted, and in the Y direction linear pattern 30y portion, the X polarized light LX cannot be transmitted but the Y polarized light LY is transmitted.

In the third embodiment, the structure of the reticle is particularly simple.

[Fourth Embodiment] FIG. 7 shows an optical system of a semiconductor exposure apparatus according to the fourth embodiment. The same components as in FIG.
The same reference numerals are given and the description thereof is omitted.

This semiconductor exposure apparatus includes a polarizing plate 1 shown in FIG.
ND filters 29A and 29 instead of 9A and 19B
B is arranged, and a quarter wave plate (not shown) is arranged in place of the polarizing plates 19C and 19D of FIG. Also, FIG.
The polarizing plate 23 that covers all of the openings 18a to 18d of
It is arranged on the surface of the aperture 18 opposite to the filters 29A and 29B. As a result, in FIG. 1, the Y-polarized light LY remains unchanged, but the X-polarized light LX is replaced by the circularly polarized light LC. The transmittances of the ND filters 29A and 29B are selected so that the intensities of the Y polarized light and the circularly polarized light LC after passing through 30 become equal to each other.

FIG. 8 shows a configuration example of the reticle 30 of FIG. 2 as a reticle 30D.

In this reticle 30D, a polarizing plate 32Y having a transmission axis in the Y direction is attached to the entire upper surface of a glass substrate 31. A linear pattern 30 in the Y direction is formed on the polarizing plate 32Y.
A quarter-wave plate 35 is attached except y and its vicinity. The light shield 34 is attached on the half-wave plate 33 except for the X-direction linear pattern 30x, and the polarizer 32Y
The Y-direction linear pattern 30y is deposited on the upper part except the part.

In this case, the transmission part of the X-direction linear pattern 30x is composed of the glass substrate 31, the polarizing plate 32Y and the half-wave plate 33, and the transmission part of the Y-direction linear pattern 30y is the glass substrate 31 and the polarizing plate. 32Y and quarter wave plate 35
Consists of.

In the portion of the X-direction linear pattern 30x, the circularly polarized light LC passes through the half-wave plate 33 and the polarizing plate 32Y.
Through the glass substrate 31, the Y-polarized light LY passes through the half-wave plate 33 and becomes the X-polarized light LX, which cannot pass through the polarizing plate 32Y. On the other hand, Y
In the portion of the directional linear pattern 30y, the circular polarization LC is 1
X-polarized light LX is transmitted through the quarter wave plate 35, and the polarizing plate 3
2Y cannot be transmitted, but Y-polarized light LY is a quarter-wave plate 3
5, the circularly polarized light LC is transmitted, the polarizing plate 32Y is transmitted and the Y polarized light LY is transmitted, and the glass substrate 31 is transmitted.

Therefore, the same effect as that of the first embodiment can be obtained.

[Fifth Embodiment] FIG. 9 shows the reticle 3 of FIG.
A configuration example of 0 is shown as a reticle 30E of the fifth embodiment.

This reticle 30E is a polarizing plate 32 of FIG.
The configuration is the same as that of FIG. 8 except that a polarizing plate 32X is attached to the lower surface of the glass substrate 31 instead of Y.

In this case, the transparent portion of the X-direction linear pattern 30x includes the glass substrate 31, the half-wave plate 33, and the polarizing plate 3.
2X, and the transmissive part of the Y-direction linear pattern 30y includes a glass substrate 31, a quarter wave plate 35, and a polarizing plate 32X.
Consists of.

In the portion of the X-direction linear pattern 30x, the circularly polarized light LC passes through the half-wave plate 33 and the glass substrate 31 and the polarizing plate 32X to become X-polarized light LX.
The polarized light LX passes through the half-wave plate 33 to become Y polarized light LY, and cannot pass through the polarizing plate 32X. On the other hand, in the portion of the Y-direction linear pattern 30y, the circularly polarized light LC passes through the quarter-wave plate 35 to become the Y-polarized light LY and cannot pass through the polarizing plate 32X, but the X-polarized light LX does not pass through the quarter-wave plate 35. To become circularly polarized light LC, and the glass substrate 31 and the polarizing plate 32
X is transmitted.

Therefore, the same effect as that of the first embodiment can be obtained.

[Sixth Embodiment] FIG. 10 shows a configuration example of the reticle 30 of FIG. 2 as a reticle 30F of the sixth embodiment.

This reticle 30F is the reticle 3 shown in FIG.
0E is turned upside down, and the polarizing plate 32X of FIG. 9 is arranged in parallel with the glass substrate 31 near the lower portion of the light shield 34 without being attached to the glass substrate 31.

Therefore, the same effect as that of the fifth embodiment can be obtained.

[Seventh Embodiment] FIG. 11 is a plan view showing an oblique incident illumination on the reticle 40 from eight directions.

The reticle 40 is covered with a light shield 34 except for the pattern portion, and the linear pattern 30x in the X direction shown in the drawing.
Also, not only the linear pattern 30y in the Y direction in the drawing, but also the linear pattern 40a and 40b bent at a right angle are formed. Two sides of the polygonal pattern 40a are in the X direction and the Y direction, and two sides of the polygonal pattern 40b are both 45 ° in the X direction and the Y direction. The X-direction linear pattern 30x, the Y-direction linear pattern 30y, and the folded linear pattern 40a pass the X-polarized light LX but not the Y-polarized light LY, and the folded linear pattern 40b passes the Y-polarized light LY but the X-polarized light LY.
It is configured in the same manner as in the above embodiment so as not to pass the polarized light LX.

The Y-polarized light LY is obliquely incident on the reticle 40 from four directions of up, down, left and right in FIG. 11, and the X-polarized light LX is shown in FIG.
The light obliquely enters the reticle 40 from four oblique directions of 1. 8
The incident angles from the direction to the center of the reticle 40 are equal to each other.

In the case of this embodiment, the pattern image formed on the photoresist has a lower resolution and a shallower depth of focus than the first embodiment, but not only the X-direction linear pattern 30x and the Y-direction linear pattern 30y but also the linear pattern. The resolution and depth of focus of the pattern images of the patterns 40a and 40b are also improved as compared with the related art.

[0058]

As described above, the first and second inventions of the present invention are as follows.
According to the invention, in the X-direction linear pattern, only the first polarized light is transmitted from the direction oblique to the plane of the reticle and at right angles to the X-direction, and the Y-direction linear pattern is oblique to the plane of the reticle. Since only the second polarized light is transmitted from the direction perpendicular to the Y direction, the photoresist on the semiconductor substrate has an excellent effect that a pattern image with both improved resolution and depth of focus can be obtained, and the semiconductor device can be highly integrated. There is a big contribution.

According to the third and fourth aspects of the present invention, in the first folding linear pattern, the angle formed between the two sides of the first folding linear pattern in the oblique direction with respect to the surface of the reticle is the same. From the direction, only the first polarized light is transmitted, and in the second polygonal linear pattern, the second polarized light is obliquely formed with respect to the surface of the reticle and has the same angle with each of the two sides of the second linear polygonal pattern. Since only the light is transmitted, the photoresist on the semiconductor substrate has an excellent effect that a pattern image with both improved resolution and depth of focus can be obtained, which largely contributes to high integration of the semiconductor device.

[Brief description of drawings]

FIG. 1 is a perspective view showing oblique illumination on a reticle from four directions according to a first embodiment of the present invention.

FIG. 2 is an optical system diagram of the semiconductor exposure apparatus according to the first embodiment of the present invention.

FIG. 3 is a plan view of an aperture.

FIG. 4 is a cross-sectional view of essential parts of the reticle of the first embodiment of the present invention.

FIG. 5 is a cross-sectional view of essential parts of the reticle of the second embodiment of the present invention.

FIG. 6 is a cross-sectional view of essential parts of a reticle according to a third embodiment of the present invention.

FIG. 7 is an optical system diagram of a semiconductor exposure apparatus according to a fourth embodiment of the present invention.

FIG. 8 is a cross-sectional view of essential parts of a reticle according to a fourth embodiment of the present invention.

FIG. 9 is a cross-sectional view of essential parts of the reticle of the fifth embodiment of the present invention.

FIG. 10 is a cross-sectional view of essential parts of the reticle of the sixth embodiment of the present invention.

FIG. 11 is a plan view showing oblique incidence illumination on the reticle from eight directions according to the seventh embodiment of the present invention.

FIG. 12 is an optical path diagram showing conventional vertical incidence illumination and oblique incidence illumination.

FIG. 13 is a diagram illustrating a problem of conventional oblique incidence illumination on a reticle.

[Explanation of symbols]

 10 semiconductor wafer 11, 30, 30A to 30F, 40 reticle 12 projection lens 11x, 30x X-direction linear pattern 11y, 30y Y-direction linear pattern 13 light source 14 parabolic mirror 15 filter 16, 20 mirror 17 fly-eye lens 18 aperture 18a -18d Opening 19A-19D, 23 Polarizing plate 21 Condenser lens 31 Glass substrate 32X, 32Y Polarizing plate 33 1/2 wavelength plate 34, 34A Light shield 35 1/4 wavelength plate 29A, 29B ND filter LX X polarization LY Y polarization LC Circularly polarized light 40a, 40b Folded linear pattern

Continuation of the front page (51) Int.Cl. ⁵ Identification number Office reference number FI technical display location // G02B 27/28 Z 9120-2K 7352-4M H01L 21/30 311 L

Claims (8)

[Claims] 1. An X-direction linear pattern (30x) and a Y-direction linear pattern (30y) whose longitudinal directions are at right angles to each other are formed by coating a light-shielding body (34) on a transparent substrate (30) except for a pattern portion. In the formed reticle, a first polarization selecting unit which is formed in the vicinity of the transparent substrate in the X-direction linear pattern and in parallel with the transparent substrate, and which transmits the first polarized light (LX) and does not transmit the second polarized light (LY). And a second polarized light selecting unit that is formed in the vicinity of the transparent substrate in the Y-direction linear pattern and in parallel with the transparent substrate, and that transmits the second polarized light and does not transmit the first polarized light. Reticle 2. A light-shielding body (34), excluding a pattern portion, which is bent on the transparent substrate (30) and bent at a right angle.
The folded linear pattern (40a) and the second folded linear pattern (40
b) is formed, and one side of the first folding linear pattern is 45 ° with one side of the second folding linear pattern, a reticle parallel to the transparent substrate near the transparent substrate of the first folding linear pattern. And a first polarization selecting unit that transmits the first polarized light (LX) and does not transmit the second polarized light (LY), and is formed parallel to the transparent substrate in the vicinity of the transparent substrate of the second folded linear pattern. A second polarized light selecting unit that transmits the second polarized light and does not transmit the first polarized light, and a reticle. 3. The first polarization selecting means includes a first polarizing plate (32X) and a second polarizing plate (32) whose transmission axes are parallel to each other.
Y) and a half-wave plate (33) arranged in parallel with the first polarizing plate and the second polarizing plate, wherein the second polarization selecting means is the first polarizing plate. The reticle according to claim 1 or 2, wherein 4. The first polarization selecting means comprises a half-wave plate (33) and a polarizing plate (32Y) arranged in parallel with the half-wave plate, and the second polarization selecting means. The reticle according to claim 1, wherein the reticle comprises the polarizing plate. 5. The first polarized light selecting means comprises a first polarizing plate (32X), and the second polarized light selecting means comprises a second polarizing plate having a transmission axis perpendicular to the transmission axis of the first polarizing plate (32X). 32Y), and the light shield (34) is formed of a portion where the first polarizing plate and the second polarizing plate overlap each other.
The reticle shown. 6. The second polarization selecting means comprises a half-wave plate (33) and a polarizing plate (32Y) arranged in parallel with the half-wave plate. The reticle according to claim 1 or 2, wherein the reticle comprises the polarizing plate and a quarter-wave plate (35) arranged in parallel with the polarizing plate. 7. The reticle (30) according to claim 1, and a first polarized light irradiation for irradiating the reticle with the first polarized light (LX) from a direction oblique to a surface of the reticle and perpendicular to the X direction. Means (13-18, 19A, 19B, 2
0, 21) and second polarized light irradiation means (13-18, 19C, 19D,) for irradiating the reticle with the second polarized light (LY) from a direction oblique to the surface of the reticle and perpendicular to the Y direction. Two
0, 21) and a projection lens (12) for projecting the pattern on the reticle onto a semiconductor substrate (10) on which a photoresist is applied.
A semiconductor exposure apparatus comprising: 8. The reticle (40) according to claim 2 and a direction oblique to the surface of the reticle and having a same angle with each of the two sides of the first folded linear pattern (40a). First polarized light irradiation means (13 to 18, 20, 21, 2) for irradiating the reticle with the first polarized light (LX).
3, 29A, 29B) and the second polarized light (LY) from a direction oblique to the surface of the reticle and at the same angle with each of the two sides of the second folded linear pattern (40b). Second polarized light irradiation means (13 to 18, 20, 21, 2) for irradiating the reticle.
3) and a projection lens (12) for projecting the pattern on the reticle onto a semiconductor substrate (10) coated with a photoresist.
A semiconductor exposure apparatus comprising: