JPH05341318A - Active matrix type liquid crystal display element - Google Patents

Abstract

PURPOSE:To provide the active matrix type liquid crystal display element of high display quality by making the controllability of a gradation display superior and improving the visual angle characteristics. CONSTITUTION:This element is equipped with plural drain lines 1 and plural signal lines 3, switching elements such as field effect type TFTs 5 which are arranged at their intersection parts, a 1st pixel electrode 7 and a 2nd pixel electrode 9 which are pixel electrodes connected to the signal lines 3 through the field effect type TFTs 5 and have 1st and 2nd display areas, different in applied electric field intensity, arranged, pixel by pixel, counter electrodes which are arranged opposite the pixel electrodes 7 and 9, liquid crystal layers 13 sandwiched between the pixel electrodes 7 and 9 and counter electrodes 11, and two capacitance elements 15 and 17 which are connected to the 2nd pixel electrode 9 in the 2nd display area in series and set nearly equal in electrostatic capacity.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device.

[0002]

2. Description of the Related Art In recent years, an active matrix type liquid crystal display element has been attracting attention as a display device capable of high resolution display. Among them, the active matrix type liquid crystal display element provided with a field effect transistor (FET) as a switching element is particularly suitable for gradation display and is being applied to televisions and the like.

The operation mode of the liquid crystal display element is TN.
Type, DS type, GH type, DAP type, thermal writing type, etc.
N type is used.

One of active matrix type liquid crystal display elements
An equivalent circuit of the pixel is shown in FIG. A field effect thin film transistor (hereinafter abbreviated as TFT) 805 is arranged near the intersection of the address line 801 and the signal line 803, and TF
The gate 807 of T805 is connected to the address line 801, the drain 809 is connected to the signal line 803, and the source 811 is connected to the pixel electrode 813. A liquid crystal layer 817 is sandwiched between the pixel electrode 813 and the counter electrode 815.
Further, an alignment layer or the like (not shown) for aligning liquid crystal molecules is formed on the surfaces of the pixel electrode 813 and the counter electrode 815 which are in contact with the liquid crystal layer 817.

By the way, the relationship (VT characteristic) between the liquid crystal applied voltage and the transmittance in the normally white mode (mode for displaying black on a white background) of the TN type liquid crystal display device is shown in FIG.
As shown in FIG. 1, for example, between the voltage at which the transmittance starts to change (referred to as threshold voltage Vth) and the voltage at which the change in transmittance almost ends (referred to as saturation voltage Vsat), for example,
There is a difference of about 1 to 2V. In the active matrix type liquid crystal display element using the FET as a switching element, gradation display is performed by providing some voltage levels between Vth and Vsat.

[0006]

However, since the above-mentioned difference between Vth and Vsat is not so large as about 1 to 2 V, the difference between the applied voltage levels becomes smaller as the number of gray scales increases, and the applied voltage can be controlled. There is a problem that it becomes difficult. That is, in the active matrix type liquid crystal display device, for example, when 64-gradation display is performed, a band-shaped unevenness of light and shade may occur on the entire screen due to a slight variation in the output of the driving IC. This is because the variation in the output voltage of the driving IC is much larger than the difference in the voltage between the gray levels, and this variation is visually recognized as a more distinct gray level difference than the gray level difference due to the voltage difference between the gray levels. Therefore, there is a problem that the display quality is significantly impaired.

Further, when gradation display is performed by such a method, due to the operating principle of the TN type liquid crystal display element, there is a large change in transmittance when the viewing angle is changed, and as a result, the viewing angle is narrowed. There are also problems.

In addition, an operation mode other than the TN type, for example, G
Even in a liquid crystal display element based on the operating principle such as H type or DAP type, it becomes more difficult to control the applied voltage as the total number of gray scales to be expressed increases.

As a technique intended to solve such a problem, a technique of providing display regions in which the electric field strengths applied to the liquid crystal layer are different from each other in one pixel is disclosed in, for example, Japanese Patent Laid-Open Nos. 2-12 and 2- It is known from Japanese Patent No. 310534, Japanese Patent Laid-Open No. 3-122621, and the like.

To summarize these techniques, when the same voltage is applied between the pixel electrode and the counter electrode in one pixel, the electric field strengths applied to the liquid crystal layer are different from each other.
It is to provide two or more areas. And if each pixel is sufficiently small compared to the entire liquid crystal display element,
The transmittance characteristic (VT characteristic) with respect to the voltage applied between the electrodes of each individual pixel appears to the observer as the sum of the transmittance characteristics of the two or more regions. as a result,
This means that the difference between Vth and Vsat is substantially enlarged, and multi-gradation display can be realized more easily. Further, it is intended to reduce the narrow viewing angle when gradation display is performed.

In such a technique as disclosed in Japanese Patent Laid-Open No. 12-12, the display areas are connected in parallel, and the electric field applied to each liquid crystal layer is changed by making the capacitance of the capacitive element different in each display area. The strength is different.

However, since the capacitive element and the liquid crystal layer are connected in series, it is not easy to change the voltage applied to the liquid crystal layer by setting the voltage applied to the capacitive element to different values. For example, in order to increase the voltage and reduce the voltage applied to the liquid crystal layer, the capacitance of the capacitive element must be reduced. For that purpose, the relative permittivity ε of the capacitive element must be large, the area S must be small, and the thickness t must be large, but the specifications of the dielectric used are limited due to process factors, and the area of the capacitive element is limited. If is smaller, there is a possibility of short circuit, and since the thickness is limited to the thickness between the substrates of the liquid crystal element, it cannot be so large. As described above, even in the known technique as described above, it is actually difficult to control the electric field strength of each display area and the difference in the electric field strength of each display area cannot be increased so much. There is a problem that it is not easy to improve the viewing angle characteristics.

The present invention has been made in order to solve such a problem, and has an excellent controllability of gradation display and an improved viewing angle characteristic, and an active matrix type liquid crystal of high display quality. The purpose is to realize a display device.

[0014]

An active matrix type liquid crystal display device of the present invention comprises a matrix wiring composed of a plurality of address lines and a plurality of signal lines, and a switching element arranged at an intersection of the matrix wirings. A pixel having an electrode in the first display area connected to the signal line via the switching element and an electrode in the second display area having a different electric field strength applied from the electrode in the first display area An electrode, a counter electrode facing the pixel electrode, a liquid crystal layer sandwiched by the pixel electrode and the counter electrode, and two or more more than the liquid crystal layer corresponding to the electrode of the first display region. And a capacitance element connected in series to the liquid crystal layer corresponding to the electrode of the second display region, so that the charges accumulated in the capacitance element are made substantially equal.

It is necessary to design the magnitude of the capacitance of the capacitance element in consideration of the physical properties of the liquid crystal material, particularly the dielectric constant and the thickness of the liquid crystal layer. That is, since the capacitive element and the liquid crystal layer form a series circuit, the voltage applied between the pixel electrode and the counter electrode is distributed to the capacitive element and the liquid crystal layer. Further, since the distribution ratio is determined by each impedance, it is necessary to calculate the impedance of the liquid crystal layer in advance and then determine the capacitance of the capacitive element.

The two or more capacitance elements may be connected in series and may have the same capacitance or different capacitances.

Further, the pixel electrode is not necessarily limited to one which is divided into only two regions, the first display region and the second display region. For example, in addition to this, a third display area is arranged adjacent to the second display area, and more than two capacitive elements are connected in series to the third display area as compared with the second display area. May be provided.

The impedance of the liquid crystal layer needs to change depending on the applied voltage because the liquid crystal itself has a dielectric anisotropy.

[0019]

In the active matrix type liquid crystal display element of the present invention, the liquid crystal cell corresponding to the second display area is provided with two or more capacitive elements as compared with the liquid crystal cell corresponding to the first display area. By connecting in series, the difference between the electric field intensity applied to the liquid crystal cell of the first display region and the electric field intensity applied to the liquid crystal cell of the second display region is increased.

That is, in the above-mentioned known technique, the dielectric used for the capacitive element is limited due to process factors, and if the area is reduced, there is a possibility of short-circuiting, and the thickness is also the substrate of the liquid crystal element. There are many restrictions such as not being able to increase that much because it is limited by the thickness between them, and it is not easy to control the capacitance of the capacitive element. On the other hand, according to the present invention, since two or more capacitive elements are connected in series, it is possible to obtain a double potential difference by arranging elements having the same capacitance in, for example, two layers. It is possible to increase the difference in electric field strength between the liquid crystal cells corresponding to two different regions such as. As a result, the controllability of gradation display is improved, the viewing angle characteristics are improved, and an active matrix type liquid crystal display element with high display quality is realized.

[0021]

Embodiments of the active matrix type liquid crystal display device of the present invention will be described below in detail with reference to the drawings.

(Embodiment 1) The active matrix type liquid crystal display device of the present invention can be represented by an equivalent circuit as shown in FIG. That is, a matrix wiring including a plurality of address lines 1 and a plurality of signal lines 3 and a switching element, for example, a field effect type TFT 5 arranged at an intersection of the matrix wiring, and the field effect type TFT 5 are provided.
A pixel electrode connected to the signal line 3 via the first pixel electrode 7 forming a first display region and a second display region in which applied electric field strengths are different from each other for each pixel. And a second pixel electrode 9, a counter electrode 11 facing the pixel electrodes 7, 9 and the pixel electrode 7,
9 and the counter electrode 11 sandwich the liquid crystal layer 1
3 and two capacitive elements 15 and 17 connected in series to the second pixel electrode 9 in the second display area.

The liquid crystal cell 19 in the first display area is mainly composed of the first pixel electrode 7, the liquid crystal layer 13 and the counter electrode 11, and the liquid crystal cell 21 in the second display area is Second pixel electrode 9, liquid crystal layer 13, and counter electrode 11
Its main part is composed of and. As shown in FIG. 1, the capacitive elements 15 and 17, which are not connected to the liquid crystal cell 19 in the first display area, are connected in series to the liquid crystal cell 21 in one of the second display areas. ..

By thus connecting the capacitors 15 and 17 in series and increasing the potential difference due to the voltage division, the electric field strength and the first electric field strength caused by the voltage applied to the liquid crystal cell 19 in the first display region are A large difference from the electric field strength due to the voltage applied to the liquid crystal cell 21 in the second display area is taken.
As a result, the controllability of gradation display is improved and the viewing angle characteristics are improved.

FIG. 2 is a plan view showing the planar structure of the active matrix type liquid crystal display element of the first embodiment, and FIG. 3 is a sectional view taken along line AA '.

The active matrix type liquid crystal display device of the first embodiment comprises an array substrate 301 and a counter substrate 303.
And the liquid crystal layer 13 sandwiched between these substrates constitutes a main part thereof.

In the array substrate 301, as shown in FIG. 3, address lines 1 made of metal are formed on a glass substrate 305 at predetermined intervals, and the surface thereof is covered with an insulating film. Further, a signal line 3 made of metal is formed at a predetermined interval so as to intersect with the address line 1, and a TFT 5 and a first pixel electrode 7 made of ITO are formed at each intersection. The TFT 5 includes a metal gate electrode 307, a drain electrode 309, and a source electrode 311.
And a semiconductor film 31 made of, for example, amorphous silicon
3 and low resistance semiconductors 315 and 317. The gate electrode 307 is connected to the address line 1, the drain electrode 309 is connected to the signal line 3, and the source electrode 311 is connected to the first pixel electrode 7. The etching stopper layer 319 and the passivation film 321 are both made of Si.
It consists of N _x . The SiO _x film 32 is formed on the gate electrode 307.
3 and the SiN _x film 325 are laminated as a gate insulating film. Further, the SiO _x film 323 and the SiN _x film 325 are formed.
Are also stacked on the second pixel electrode 9. The first pixel electrode 7 interposes the SiN _x film 325 and the SiO _x film 323, that is, the capacitive element 15 and the capacitive element 17,
It is connected to the second pixel electrode 9 made of ITO.

As described above, in the active matrix type liquid crystal display element of this embodiment, the capacitive element 15 uses the end portion of the first pixel electrode 7 as one electrode and the SiO _x film 323 and the SiN _x film 325 as dielectrics. The end portion of the second pixel electrode 9 located immediately below the first pixel electrode as a body is configured as the other electrode, and the capacitive element 17 is an end of the second pixel electrode 9 located immediately below the first pixel electrode. Part as one electrode
_{Using the x} film 323 and the SiN _x film 325 as a dielectric, SiN
_{The surface of the x} film 325 in contact with the liquid crystal layer is configured as the other electrode. By using the second pixel electrode 9 as the electrode of the capacitive element 15 and also as the electrode of the capacitive element 17, the capacitive element 15 and the capacitive element 17 are connected in series in the second pixel electrode 9. There is. With such a structure, the capacitor 15 and the capacitor 17 can have a very simple manufacturing process.

In this embodiment, the SiO _x film 323 and SiN are used.
_{The x} film 325 is a laminated body in order to avoid a short circuit due to a pinhole, but either one may have a single layer structure.

The entire surface of the array substrate 305 is covered with an alignment film 327 made of polyimide.

On the other hand, in the counter substrate 303, the lattice-shaped light-shielding film 33 made of a metal such as Cr is formed on the glass substrate 329 so as to cover a portion not related to display as a pixel.
1 is formed, and the color filter 333 and the ITO are formed on it.
Is formed on the counter electrode 11, and an alignment film 335 made of polyimide is formed thereon.

Furthermore, the array substrate 301 and the counter substrate 30
A liquid crystal layer 13 made of TN type liquid crystal is sandwiched between them and the thickness thereof is about 5 μm. The liquid crystal molecules are pre-tilted by the action of the alignment films 327 and 335 and are aligned substantially parallel to the substrate, and the orientation of the liquid crystal molecules is twisted by 90 degrees between the alignment films 327 and 335 to form a TN liquid crystal display element. ing. In addition, the array substrate 301 and the counter substrate 30
Polarizing plates 337 and 339 are formed on each of the three.

The capacitive element 15 includes the first pixel electrode 7 and Si.
The capacitive element 17 includes the O _x film 323, the SiN _x film 325, and the second pixel electrode 9, and the second pixel electrode 9
And a SiO _x film 323 and a SiN _x film 325. In the present embodiment, the first pixel electrode 7 is configured so as to overlap the main surface of the second pixel electrode 9, but
The capacitive element 15 may be formed only between the pixel electrode 9 and the side surface of the pixel electrode 9. Further, the gate insulating film and the dielectric film of the capacitive element do not necessarily have to be made of the same material.

Next, a method of manufacturing the active matrix type liquid crystal display device of the first embodiment will be described.

A Mo-Ta film was formed on a 1.1 mm-thick non-alkali glass substrate by sputtering to a thickness of 300 nm, and the gate electrode 30 was formed into a shape as shown in FIG. 2 by photolithography.
7, the storage capacitor line 201, and the address line 1 were formed. Further, a 100 nm ITO film was formed by sputtering, and then patterned by photolithography to form the second pixel electrode 9.

Next, SiO _{x with} a thickness of 360 nm and a thickness of 40 nm
SiN _x , 70 nm thick a-Si, 200 nm thick Si
N _x is formed by a CVD method and formed into a predetermined pattern by photolithography, and insulating films 323, 325,
A semiconductor film 313 and an etching stopper layer 319 were obtained.
N ⁺ a-Si having a film thickness of 30 nm was formed by CVD and patterned by photolithography to form low resistance semiconductor films 315 and 317.

Next, a 100 nm-thick ITO film was formed by sputtering and formed into a pattern as shown in FIG. 2 by photolithography to obtain a first pixel electrode 7. further,
Mo and Al were deposited by sputtering and patterned by photolithography to obtain a source electrode 311 and a drain electrode 309.

Then, CVD of SiN _x having a film thickness of 200 nm is performed.
Then, a passivation film 321 was formed. After forming a 100 nm polyimide thin film so as to cover it, a rubbing alignment treatment is performed on the surface of the polyimide thin film to form an alignment film 32.
Formed 7.

In this way, the signal line 3 and the address line 1
Were formed in a matrix, and pixels were formed at each of the intersections to produce an array substrate 301 having 100 pixels in vertical × 100 pixels in total, 10,000 pixels in total.

On the other hand, the counter substrate 303 is the glass substrate 32.
A light-shielding film 331 was formed by depositing Cr with a film thickness of 300 nm on the substrate 9 by sputtering and photolithography, and a color filter 333 having predetermined R, G, and B formed for each pixel was formed on the light-shielding film 331. Then, a 100 nm-thick ITO film was formed by sputtering to obtain the counter electrode 11. A polyimide thin film having a thickness of 100 nm was formed so as to entirely cover the film, and then the surface was subjected to rubbing alignment treatment to form an alignment film 335.

Along the periphery of the alignment film 335 of the counter substrate 303, an epoxy adhesive (not shown) is printed on a portion other than the injection port (not shown), and on the display screen portion of the counter substrate 303. Micropearls (manufactured by Sekisui Fine Chemical Co., Ltd.) having a particle size of 5 μm were dispersed as a gap material (not shown).

The substrates 301 and 303 are combined so that the orientation films 327 and 335 face each other and the angle formed by the rubbing directions is 90 degrees, and the substrates 301 and 303 are heated to cure the adhesives. Pasted together

Then, S811 was applied as a liquid crystal composition to ZLI-1565 (manufactured by E. Merck) from the injection port by a conventional method.
After the injection of 0.1 wt% added, the injection port was sealed with an ultraviolet curable resin.

After this, polarizing plates 337 and 339 were attached to the array substrate 301 and the counter substrate 303, and the short ring (not shown) on the surface of the array substrate 301 was cut off to complete the active matrix type liquid crystal display element.

When an active matrix type liquid crystal display device manufactured in this manner was displayed with 64 gradations, the transmittance was almost equal to the set value for each gradation and the displayed image was visually observed. As a result, it was confirmed that the display quality was good. It was also confirmed that the change in transmittance when the viewing angle direction was changed was small and the viewing angle characteristics were high. FIG. 4 shows the result of measuring the change in the VT characteristic of the active matrix type liquid crystal display device according to the present invention depending on the viewing angle direction.

As is clear from FIG. 4, the VT of the active matrix type liquid crystal display device according to the present invention is compared with the viewing angle characteristic of the conventional liquid crystal display device shown in the curve of FIG. As for the characteristics, as seen from the curve in FIG. 4B, the change in transmittance depending on the viewing angle is significantly suppressed.

(Embodiment 2) Next, an active matrix type liquid crystal display device of a second embodiment will be described with reference to FIGS. FIG. 5 is a diagram showing a planar structure of an active matrix type liquid crystal display device of the second embodiment, and FIG.
It is a -B 'sectional view.

The active matrix type liquid crystal display element of the second embodiment is the same as that of the first embodiment except for the first capacitance element 215 and the second capacitance element 217.
The capacitor elements 215 and 217 will be mainly described below. The same parts as those in the first embodiment are designated by the same reference numerals as those in the first embodiment.

Metal layer 601 made of metal such as Mo-Ta
Are disposed directly on the glass substrate 305. A SiO _x layer 323 and a SiN _x layer 325 are formed on the metal layer 601. Further, the first pixel electrode 5 made of ITO
07 and the second pixel electrode 509 are formed at a predetermined distance so as to partially overlap with each other on the metal layer 601. That is, the capacitive element 515 composed of the first pixel electrode 507, the SiO _x layers 323 and 325 as the dielectric film, and the metal layer 601, the metal layer 601, and the SiO _x layer 3.
23 and the capacitive element 517 composed of the second pixel electrode 509 are connected in series by the metal layer 601, and the first pixel electrode 507 and the second pixel electrode 509 are connected in parallel. become.

It has been confirmed that the active matrix type liquid crystal display element of the second embodiment having such a structure has a good display image quality as in the first embodiment. It was also confirmed that the change in transmittance when changing the viewing angle direction was small and the viewing angle characteristics were high.

The metal layer 601 of this embodiment is made of ITO.
Transparent conductive film such as SiO _x layer or Si
Instead of the N _x layer, other materials such as a metal anodic oxide film may be used.

(Embodiment 3) FIG. 7 shows a structure of an active matrix type liquid crystal display element of a third embodiment which is a modification of the active matrix type liquid crystal display element of the second embodiment. The feature is that in the element of the second embodiment, the first pixel electrode 707 and the second pixel electrode 709 are respectively in contact with the side surfaces of the metal layer 601, and the capacitive elements 715 and 717 are formed, respectively. The other structure is the same as that of the element of the second embodiment described above. Also in the active matrix type liquid crystal display element of the third embodiment having such a configuration, the first and second
It was confirmed that the quality of the display image was good as in the example of. It was also confirmed that the change in transmittance when changing the viewing angle direction was small and the viewing angle characteristics were high.

In the first to third embodiments described above, the dielectrics of the capacitive element 15 and the capacitive element 17 (or the capacitive element 215 and the capacitive element 217, etc.) are made of the same material and have the same film thickness. I am using. Therefore, the combined capacitance of the capacitive element 15 and the capacitive element 17 is as follows.

That is, the capacitive element 15, the capacitive element 17,
And their combined capacities are C ₂ , C ₃ , and C, respectively,
When the total film thickness of the SiO _x film 323 and the SiN _x film 325 is d and the total dielectric constant of the capacitance is ε, the capacitive element 15,
17, area related to capacitance, area of SiO _x film 323, Si
When the areas of the N _x film 325 are S ₂ , S ₃ , and S, respectively, C = (1 / C ₂ + 1 / C ₃ ) ⁻¹ = C ₂ C ₃ / (C
₂ + C ₃ ) = (εS ₂ / d · εS ₃ / d) / {(εS ₂
/ D) + (εS ₃ / d)} = {ε ² S ₂ (S−S ₂ ) /
d} / (εS / d) = ε / d (S ₂ −S ² ₂ / S).

As is clear from the above equation, the combined capacitance C is
It can be determined by controlling the area of the capacitive element 15 (and the capacitive element 17, etc.).

Further, by using the same material and the same film thickness as the dielectrics of the two capacitive elements, the manufacturing process can be simplified.

The above-mentioned pixel electrode does not necessarily have to be divided into two regions like the first region and the second region. For example, the first region, the second region, and the third region are divided into three regions, and each of these regions is different from the first region by two or more, for example, as shown in FIG. As shown in FIG. 9, 0, 2, and 3 capacitive elements may be arranged so as to be connected in series in the above-described structure.

In addition, in the above-described first to third embodiments, the number of capacitive elements connected to the second region is two, and compared with the number of capacitive elements connected to the first region. There are two, but not limited to this. For example, assuming that the number of capacitive elements connected to the first region is one and the number of capacitive elements connected to the second region is four, the difference in the number is
It may be three or so. At this time, it is clear that the larger the difference in the number of capacitive elements connected in series, the larger the difference in applied voltage. Therefore, the difference in applied voltage is adjusted depending on the case where the technique of the present invention is used. Therefore, it suffices to determine the difference in the number of capacitive elements.

[0059]

As clearly shown in the above detailed description, according to the present invention, the controllability of gradation display is excellent and the viewing angle is wide,
It is possible to realize an active matrix type liquid crystal display element having high display quality.

[Brief description of drawings]

FIG. 1 is a diagram showing an equivalent circuit of one pixel of an active matrix type liquid crystal display element of the present invention.

FIG. 2 is a diagram showing a planar configuration of an active matrix type liquid crystal display device of Example 1 of the present invention.

FIG. 3 is a cross-sectional view of an active matrix type liquid crystal display element of the first embodiment of the present invention.

FIG. 4 is a diagram showing an applied voltage-transmittance characteristic and a viewing angle characteristic of the active matrix type liquid crystal display element of the first embodiment of the present invention.

FIG. 5 is a diagram showing a planar configuration of an active matrix type liquid crystal display element according to a second embodiment of the present invention.

FIG. 6 is a sectional view of an active matrix type liquid crystal display element of a second embodiment of the present invention.

FIG. 7 is a cross-sectional view of an active matrix type liquid crystal display device of Example 3 of the present invention.

FIG. 8 is a cross-sectional view showing a case where a third region is further provided in the active matrix liquid crystal display element of the first embodiment of the present invention.

FIG. 9 is a diagram showing an equivalent circuit of one pixel when a third region is further provided in the active matrix type liquid crystal display element of the first embodiment of the present invention.

FIG. 10 is a diagram showing an equivalent circuit of one pixel of a conventional active matrix type liquid crystal display element.

FIG. 11 is a diagram showing applied voltage-transmittance characteristics of a conventional active matrix type liquid crystal display element.

[Explanation of symbols]

1 ... Address line, 3 ... Signal line, 5 ... TFT, 7 ... First pixel electrode, 9 ... Second pixel electrode, 11 ... Counter electrode, 13
... Liquid crystal layer, 15, 17 ... Capacitive element, 19 ... Liquid crystal cell in first display area, 21 ... Liquid crystal cell in second display area

Claims (3)

[Claims] 1. A matrix wiring comprising a plurality of address lines and a plurality of signal lines, a switching element arranged at an intersection of the matrix wiring, and a first wiring connected to the signal line via the switching element. A pixel electrode having an electrode in a first display region and an electrode in a second display region having a different applied electric field strength from the electrode in the first display region; a counter electrode facing the pixel electrode; Compared to a liquid crystal layer sandwiched between an electrode and the counter electrode, the liquid crystal layer corresponding to the electrode in the first display region is 2
An active matrix type liquid crystal display device comprising a plurality of capacitive elements connected in series to the liquid crystal layer corresponding to the electrodes of the second display area, and making the charges accumulated in the capacitive elements substantially equal. 2. A first capacitance element, wherein one end of the electrode of the first display area is used as one electrode and one end of the electrode of the second display area is used as the other electrode via a dielectric. 7. A second capacitance element, which is connected in series to the liquid crystal layer via a dielectric and uses the other end of the electrode of the second display region as one electrode to apply an electric field. 1. The active matrix liquid crystal display element according to 1. 3. One end of the electrode of the first display area is used as one electrode, and one end of a capacitance electrode provided separately from the electrode of the first display area via a dielectric is used as the other electrode. And the other end of the electrode for the second display region via the dielectric and the other end of the electrode for capacitance as the other electrode, and the other end of the electrode for the second display region as the other electrode. The active matrix type liquid crystal display element according to claim 1, further comprising a second capacitor element connected in series with the second capacitor element.