JPH0527409A - Formation of pattern data of mask - Google Patents

Abstract

PURPOSE:To easily form the pattern data of a phase shift mask. CONSTITUTION:The pattern data of the phase shift mask is separated to an actual pattern data layer, an auxiliary pattern data layer and a shift pattern data layer 101. In succession, the actual pattern data, auxiliary pattern data and shift pattern data separated in the previous state are then respectively separately inspected and corrected and the correct actual pattern data, auxiliary pattern data and shift pattern data in this stage are formed 102. The actual pattern data, auxiliary pattern data and shift pattern data obtd. in the previous state are then synthesized by changing combinations by each two pieces to form three pieces of the two-layer synthesized pattern data. The respective data are inspected and corrected and plural pieces of the correct two-layer synthesized pattern data at this stage are formed 103. At last, all of the correct two-layer synthesized pattern data obtd. in the previous state are synthesized to form the three layer synthesized pattern data and are subjected to inspection and correction 104.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask pattern data generation technique, and more particularly to a mask pattern layout design technique which is an original image of a predetermined pattern forming a semiconductor integrated circuit device.

[0002]

2. Description of the Related Art Conventionally, in a normal mask, a mask pattern formed on a mask substrate and a pattern which a designer intends to form on a semiconductor wafer are the same.

Therefore, when creating the mask pattern data, the geometrical rules and electrical rules of the pattern to be formed on the semiconductor wafer are satisfied with respect to the mask pattern data formed on the mask substrate. Whether or not the pattern is checked, and based on the result of the check, the data of the mask pattern is corrected by hand or a computer to create the data of the mask pattern suitable for the design.

The layout design technique is described in, for example, "Book of MOS LSI Design", P212-P214, published by Industrial Books, 1984.

[0005]

By the way, in recent years, in semiconductor integrated circuit devices, the size of elements, wirings, and the like formed on a semiconductor wafer tends to be reduced. Along with this, it is required to improve the resolution of the pattern transferred onto the semiconductor wafer.

As a technique for improving the resolution of a pattern transferred onto a semiconductor wafer, there is a phase shift method, for example. The phase shift method is a technique for improving the resolution of a pattern transferred onto a semiconductor wafer by manipulating the phase of light transmitted through a predetermined transmission region of a phase shift mask.

In the phase shift method, the pattern formed on the mask substrate and the pattern to be formed on the semiconductor wafer may be partially different. This will be described with reference to FIGS.

FIG. 26 shows a pattern 50 to be formed on a semiconductor wafer. The pattern 50 includes patterns 50a to 50d, of which the pattern 50
The dimension between a and 50d and between the patterns 50b and 50d is a minimum dimension of about 0.35 μm which cannot be resolved by the i-line, for example.

Now, temporarily, as shown in FIG. 27, a pattern 51 (51a to 51d) formed on a mask substrate is formed.
It is assumed that the pattern 50 has the same shape as the pattern 50 shown in FIG. 26 to be formed on the semiconductor wafer.

Then, as shown in FIG. 28, it is assumed that the phase shift pattern films 52a and 52b are arranged on the patterns 51a and 51c of the pattern 51, respectively.

In this case, the phase shift pattern film 52a,
There is no problem because the light transmitted through the patterns 51a and 51c where 52b is arranged and the light transmitted through the patterns 51b and 51d where the phase shift pattern films 52a and 52b are not arranged have opposite phases.

However, since the light transmitted through the pattern 51b and the light transmitted through the pattern 51d have the same phase with each other, the pattern 51b and the pattern 51d are left as they are.
An unnecessary pattern will be transferred between and. This problem cannot be avoided only by changing the arrangement of the phase shift pattern films 52a and 52b.

Therefore, in this case, the pattern 51 formed on the mask substrate is changed as follows, for example.

That is, as shown in FIG. 29, the patterns 51b and 51d in the middle are provided between these patterns 51b and 51d.
b and 51d are connected to each other, and an auxiliary pattern 53a is formed so as to form a transmissive region therebetween, and as shown in FIG.
A pattern 54 composed of three patterns 54a to 54c that run parallel to each other is formed.

Then, as shown in FIG. 31, pattern 5
The phase shift pattern films 52a and 52b are arranged on the patterns 54a and 54c on both sides of the pattern No. 4, respectively, and the auxiliary pattern 53a is formed on the pattern 54b.
The phase shift pattern film 52c is arranged at the position (see FIG. 29).

By doing so, a phase difference occurs between the region having the phase shift pattern film 52c and the region not having the phase shift pattern film 52c in the light transmitted through the pattern 54b.
The pattern 50 shown in FIG. 26 can be transferred.

As described above, in the case of the phase shift mask, the pattern 54 to be formed on the mask substrate and the pattern 50 to be formed on the semiconductor wafer partially depend on the shape of the pattern to be transferred on the semiconductor wafer. May be different.

By the way, as described above, conventionally, it is assumed that the pattern formed on the mask substrate and the pattern to be formed on the semiconductor wafer are equal to each other. On the other hand, it is inspected whether or not the geometrical rules and electrical rules of the pattern to be formed on the semiconductor wafer are satisfied.

However, if the conventional drawing method is applied to the creation of the pattern data of the phase shift mask, for example, the pattern 54 on the mask substrate shown in FIG.
Although b is correct, it is determined to be a short circuit.
This pattern must be separated on the semiconductor wafer.

That is, conventionally, when the pattern data of the phase shift mask was created, it was difficult to inspect the pattern data, and it was difficult to create the pattern data of the phase shift mask.

Further, when the pattern data of the phase shift mask is created, the data processing becomes complicated, and it takes time to find a pattern design error, a layout error, etc.
There is a problem that it takes time to create the pattern data of the phase shift mask.

The present invention has been made in view of the above problems, and an object thereof is to provide a technique capable of facilitating the process of creating pattern data of a phase shift mask.

Another object of the present invention is to provide a technique capable of shortening the time for creating the pattern data of the phase shift mask.

The above and other objects and novel features of the present invention will be apparent from the description of the specification and the accompanying drawings.

[0025]

Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.

That is, the first invention is a method for creating pattern data of a mask having a mask pattern and a phase shift pattern on a mask substrate, wherein the pattern data is an actual pattern data layer having actual pattern data,
A data separation step of laying out separately into an auxiliary pattern data layer having auxiliary pattern data and a phase shift pattern data layer having phase shift pattern data;
A first inspection correction step of inspecting and correcting three two-layer composite pattern data obtained by combining the actual pattern data, the auxiliary pattern data, and the phase shift pattern data by changing the combination two by two. A second inspection correction step of inspecting and correcting the three-layer composite pattern data obtained by combining at least two of the three correct two-layer composite pattern data at that stage obtained by the one-drawing correction step A method of creating pattern data of a mask having

A second aspect of the present invention is a mask pattern data creating method for dividing at least one of the phase shift pattern data layer and the auxiliary pattern data layer into two or more data layers.

[0028]

According to the above-mentioned first invention, while the pattern data of the phase shift mask is being created, the actual pattern data, the auxiliary pattern data and the phase shift pattern data constituting the pattern data are individually inspected and corrected. However, by creating the pattern data of the entire phase shift mask pattern, it becomes possible to easily create highly reliable pattern data of the phase shift mask.

Further, during the creation of the pattern data of the phase shift mask, the entire pattern data is created by inspecting and correcting the actual pattern data, the auxiliary pattern data and the phase shift pattern data which form the pattern data. In addition, it is possible to detect a design error, a layout error, etc. of the pattern data of the phase shift mask at an early stage and correct it.

According to the second aspect of the invention described above, the phase shift pattern data and the auxiliary pattern data can be easily processed, and at the same time, fine processing can be performed at high speed.

[0031]

Embodiment 1 FIG. 1 is a flow chart for explaining a mask pattern data creating method which is an embodiment of the present invention, FIG. 2 is an overall plan view of a predetermined phase shift mask pattern on a phase shift mask, and FIG. FIG. 5 is an overall plan view of a pattern transferred onto a semiconductor wafer by the phase shift mask pattern of FIG. 2, FIG. 4 is an explanatory view illustrating a data storage state during pattern data creation of the phase shift mask pattern,
7 to 7 are explanatory views for explaining the steps of individually inspecting and correcting the actual pattern data, the auxiliary pattern data and the phase shift pattern data, respectively, FIGS. 8, 9 and 11 to 1
4 is an explanatory view for explaining a process of creating two-layer composite pattern data and inspecting / correcting it, FIG. 10 is an explanatory view for explaining a modification of the pattern data processing, and FIG. 15 is for creating three-layer composite pattern data. It is explanatory drawing explaining the process of inspecting / correcting it.

The mask pattern data creating method of the first embodiment is, for example, a phase shift mask pattern data creating method used when a predetermined pattern is transferred onto a semiconductor wafer. The mask also includes a reticle.

The phase shift mask pattern used for the description of the first embodiment and the pattern transferred on the semiconductor wafer by the phase shift mask pattern are shown in FIGS. 2 and 3, respectively. The shaded area in FIG. 2 indicates the light-shielding area.

The phase shift mask pattern 1 is composed of an actual pattern 2, auxiliary patterns 3a and 3b, and a phase shift pattern (hereinafter, simply referred to as a shifter pattern) 4.

The actual pattern 2 is a pattern having the same shape as the pattern 5 transferred onto a semiconductor wafer (not shown), and is formed in a T shape, for example.

Near the corner 2c formed by the horizontal bar 2a and the vertical bar 2b of the actual pattern 2, for example, a rectangular auxiliary pattern 3a is arranged in contact with the vertical bar 2b of the actual pattern 2. ing.

The auxiliary pattern 3a is a pattern for preventing the transfer pattern portion near the corner 2c from being thinned by increasing the light intensity near the corner 2c.

On the other hand, on both sides of the vertical bar portion 2b of the actual pattern 2, for example, a rectangular auxiliary pattern 3b is provided.
Are arranged along the edge of.

The auxiliary pattern 3b is a pattern that forms a transmissive region for transmitting light having a phase different from that of the light that passes through the real pattern 2, whereby the transfer pattern on the side of the vertical bar portion 2b of the real pattern 2 is formed. The resolution of the part can be improved.

That is, the phase shift mask pattern 1 of the first embodiment has two types of auxiliary patterns 3a, which have different functions necessary for improving the resolution of the transfer pattern, for example.
3b. However, the auxiliary patterns 3a and 3b
Are not transferred onto the semiconductor wafer.

The shifter pattern 4 is a pattern of a transmissive film for producing a phase difference in the light transmitted through the phase shift mask, and is formed so as to draw a slightly larger T-shape along the line of the actual pattern 2. There is.

However, in the shifter pattern 4, the corner portion 2
The vicinity of c is formed wide so that the light transmitted through the actual pattern 2 and the light transmitted through the auxiliary pattern 3a are in phase with each other.

This is because when a phase difference occurs between the light transmitted through the actual pattern 2 and the light transmitted through the auxiliary pattern 3a, the light intensity of the corner portion 2c is increased to correct the projected image. This is because the purpose of the pattern 3a cannot be achieved.

The shifter pattern 4 is the actual pattern 2
And the light transmitted through the other auxiliary pattern 3b are arranged in opposite phases. This is because the purpose of the auxiliary pattern 3b cannot be achieved when the light transmitted through the actual pattern 2 and the light transmitted through the auxiliary pattern 3b are in phase.

Next, the pattern data creating method of the first embodiment will be described with reference to FIGS. 2 to 15 along the steps of FIG. 1 by taking the case of creating the pattern data of the phase shift mask pattern 1 described above as an example.

First, in the first embodiment, as shown in FIG. 4, the phase shift mask pattern data 6 is separated into an actual pattern data layer 7, an auxiliary pattern data layer 8 and a shifter pattern data layer 9.

The actual pattern data layer 7, the auxiliary pattern data layer 8 and the shifter pattern data layer 9 respectively store actual pattern data, auxiliary pattern data and shifter pattern data which will be described later.

In the first embodiment, at the same time as the phase shift mask pattern data 6 is separated, the auxiliary pattern data layer 8 is further divided into a plurality of auxiliary pattern data layers 8a,
Separate into 8b.

This is because the auxiliary patterns have different functions and the like as described above. Therefore, the data processing can be facilitated by separating the auxiliary pattern data layer depending on the different functions. This is because high-speed and detailed data processing can be performed.

For example, the auxiliary pattern data layer 8a stores the pattern data during the formation of the above-described auxiliary pattern 3a, and the auxiliary pattern data layer 8b stores the above-described pattern data during the formation of the auxiliary pattern 3b. There is.

The pattern data of each of the pattern data layers 7 to 9 can be independently processed and combined. The pattern data of the pattern data layers 7 to 9 and their combined pattern data are displayed on a display (not shown) or the like so that they can be viewed (101).

Next, the operator selects the actual pattern data layer 7
The actual pattern data is fetched from and displayed on a display or the like. At this time, it is assumed that, for example, T-shaped real pattern data 2D ₁ as shown in FIG. 5 is displayed on the display.

Subsequently, the operator compares the displayed actual pattern data 2D ₁ with the actual pattern 2 of the design drawing to perform drawing inspection. Here, for example, it is checked whether or not the shape or the like of the displayed actual pattern data 2D ₁ is correct.

If an error is found in the real pattern data 2D ₁ , it is corrected. If there is no error, the real pattern data 2D ₁ is regarded as the correct real pattern data 2D ₂ at this stage and the real pattern data layer 7 Save to.

The design drawing is a layout drawing written on the paper by the designer and has various information such as dimensions, position coordinates and the number of pieces in addition to the pattern shape.

Next, the operator takes out the auxiliary pattern data from the auxiliary pattern data layer 8 and displays it on a display or the like. At this time, it is assumed that the auxiliary pattern data 3D ₁ as shown in FIG. 6 is displayed on the display.

[0057] auxiliary pattern data 3D ₁ includes a one auxiliary pattern data 3AD _1, and a plurality of auxiliary pattern data 3BD ₁ Tokyo. Auxiliary pattern data 3
Auxiliary pattern data 3AD ₁ of D _1, 3BD ₁ are each auxiliary pattern 3a, which corresponds to the pattern data during the creation of 3b.

Subsequently, the worker compares the displayed auxiliary pattern data 3D ₁ with the auxiliary pattern 3 of the design drawing to perform drawing inspection. Here, for example, it is checked whether or not the shape and number of the displayed auxiliary pattern data 3D ₁ are correct.

If it is correct, the auxiliary pattern data 3D ₁ is saved as correct data, and if there is an error, the pattern data 3D ₁ is corrected.

In the case of FIG. 6, it can be judged that the displayed auxiliary pattern data 3D ₁ does not have one auxiliary pattern data 3AD ₁ of the auxiliary pattern 3a on the design drawing.

Then, the operator operates the keyboard or the like to correct the displayed auxiliary pattern data 3D ₁ based on the information of the auxiliary pattern 3 described in the design drawing.

Then, the corrected pattern data is stored in the auxiliary pattern data layer 8 as the correct auxiliary pattern data 3D ₂ at this stage.

[0063] Incidentally, the right auxiliary pattern auxiliary pattern data 3AD _2, 3BD ₂ data 3D ₂ are each auxiliary pattern 3a, which corresponds to the data during the creation of 3b.

Next, the operator takes out the shifter pattern data from the shifter pattern data layer 9 and displays it on a display or the like. At this time, for example, it is assumed that T-shaped shifter pattern data 4D ₁ as shown in FIG. 7 is displayed.

Then, the operator compares the displayed shifter pattern data 4D ₁ with the shifter pattern 4 of the design drawing to perform drawing inspection. Here, for example, it is checked whether or not the shape of the shifter pattern data 4D ₁ is correct.

If it is correct, the shifter pattern data 4D ₁ is saved as correct data, and if there is an error, the pattern data 4D ₁ is corrected.

In the case of FIG. 7, the operator can find an error in the corner area formed by the horizontal bar portion and the vertical bar portion of the displayed shifter pattern 4D ₁ . That is, it can be determined that the corner area must be wider than other pattern areas.

Then, the operator operates a keyboard or the like based on the pattern dimension information of the shifter pattern 4 described in the design drawing, and the angle formed by the horizontal bar portion and the vertical bar portion of the shifter pattern data 4D ₁ is made. The partial area is modified to be wider than the other pattern areas.

Then, the corrected pattern data is stored in the phase shift pattern data layer 9 as the correct shifter pattern data 4D ₂ at this stage (10).
2).

Then, as shown in FIG. 8, the operator selects the correct actual pattern data 2D ₂ , auxiliary pattern data 3D ₂ and shifter pattern data 4D ₂ created in the previous step (step 102). Pattern data 2
D ₂ and the correct auxiliary pattern data 3D ₂ are combined,
The two-layer composite pattern data SYA ₁ is displayed on a display or the like.

The two-layer composite pattern data SYA ₁ is composed of T-shaped real pattern data 2D ₂ and real pattern data 2D.
An auxiliary pattern data 3AD ₂ arranged in contact with the vertical bar portion of ₂ and the horizontal bar portion and a vertical bar portion to the vicinity of the corners formed by, disposed in a state overlapping the line of vertical bar portion near the corner portion an auxiliary pattern data 3AD ₂ that is, are composed from the plurality arranged along the sides of the vertical bar portion auxiliary pattern data 3BD ₂ Prefecture.

Next, as shown in FIG. 9, the operator compares the displayed two-layer composite pattern data SYA ₁ with the two-layer composite pattern 10sya of the design drawing to perform drawing inspection.

[0073] Here, for example, the actual pattern data 2D ₂ of the displayed two-layer synthetic pattern data SYA _1, the positional relationship between the auxiliary pattern data 3AD _2, 3BD _2, i.e., whether or not the positional relationship between the two layers is correct To inspect.

If it is correct, the two-layer composite pattern data SYA ₁ is saved as correct data, and if there is an error, the pattern data SYA ₁ is corrected.

In the case of FIG. 8, the operator selects _one of the two auxiliary pattern data 3AD ₂ and 3AD ₂ of the displayed two-layer composite pattern data SYA _{1 so} that one auxiliary pattern data 3AD ₂ is the actual pattern data 2D ₂ It can be determined that they overlap.

Therefore, the operator operates the keyboard or the like based on the position coordinate information of the auxiliary pattern 3a described in the design drawing, and one auxiliary pattern data 3AD ₂ is arranged at the position as the design drawing. The two-layer composite pattern data SYA ₁ is corrected as described above.

Then, the corrected two-layer composite pattern data is stored as the correct two-layer composite pattern data SYA ₂ at this stage.

Correct two-layer composite pattern data SY
Real pattern data 2D of A _{2 3} and the auxiliary pattern data 3AD _3, 3BD ₃ are each actual pattern 2, the auxiliary pattern 3a, which corresponds to the pattern data during the creation of 3b.

On the other hand, at this stage, as shown in FIG.
The correct two-layer composite pattern data SYA ₂ is separated into the actual pattern data 2D ₃ and the auxiliary pattern data 3D _3, and the auxiliary pattern data 3D ₃ among them is registered as the correct auxiliary pattern data 3D ₂ (see FIG. 6). However, in the subsequent data processing, the auxiliary pattern data 3D
_{Although 2} can be used, for the sake of simplicity of explanation, the case where such processing is not performed will be continued here.

Next, the worker, as shown in FIG.
Correct auxiliary pattern data 3D ₂ created in the previous process (102 process) and correct shifter pattern data 4D ₂
And are combined, and the two-layer combined pattern data SYB ₁ is displayed on a display or the like.

The two-layer composite pattern data SYB ₁ includes T-shaped shifter pattern data 4D ₂ and shifter pattern 4
Auxiliary pattern data 3 placed inside the wide part of D ₂
AD ₂ , auxiliary pattern data 3AD ₂ which is also arranged inside the wide portion with a slight deviation, and a plurality of auxiliary pattern data arranged outside the vertical line of the shifter pattern data 4D ₂ It is composed of 3BD ₂ .

Subsequently, the operator, as shown in FIG.
The displayed two-layer composite pattern data SYB ₁ is compared with the two-layer composite pattern 10syb of the design drawing to perform drawing inspection.

Here, for example, the auxiliary pattern data 3AD ₂ , 3 of the displayed two-layer composite pattern data SYB ₁ is displayed.
Positional relationship between BD ₂ and shifter pattern data 4D ₂ ,
That is, it is checked whether or not the positional relationship between the two layers is correct.

If it is correct, the two-layer composite pattern data SYB ₁ is saved as correct data, and if there is an error, the pattern data SYB ₁ is corrected.

In the case of FIG. 12, the operator selects _one auxiliary pattern 3A from the two auxiliary pattern data 3AD ₂ and 3AD ₂ of the displayed two-layer composite pattern data SYB _1.
It can be determined that the position of D ₂ is displaced.

Then, the operator operates the keyboard or the like based on the information on the position coordinates of the auxiliary pattern 3a described in the design drawing, and one auxiliary pattern data 3AD ₂ is arranged at the position according to the design drawing. Thus, the two-layer composite pattern data SYB ₁ is modified.

Then, the corrected two-layer composite pattern data is stored as the correct two-layer composite pattern data SYB ₂ at this stage.

Correct two-layer composite pattern data SY
B ₂ of the auxiliary pattern data 3AD _3, 3BD ₃ and shifter pattern data 4D ₃ are each auxiliary pattern 3
a, 3 b and the shifter pattern 4 correspond to the pattern data being created.

Next, the operator, as shown in FIG.
The correct actual pattern data 2D ₂ created in the previous step (step 102) and the correct shifter pattern data 4D ₂ are combined, and the two-layer combined pattern data SYC ₁ is displayed on a display or the like.

The two-layer composite pattern data SYC ₁ is composed of T-shaped real pattern data 2D ₂ and shifter pattern data 4D ₂ which draws a slightly larger T-shape along the line of the real pattern data.

Subsequently, the operator, as shown in FIG.
The displayed two-layer composite pattern data SYC ₁ is compared with the two-layer composite pattern 10 syc of the design drawing to perform drawing inspection.

Here, for example, it is checked whether or not the positional relationship between the actual pattern data 2D ₂ and the shifter pattern data 4D ₂ of the displayed two-layer composite pattern data SYC ₁ , that is, the positional relationship between the two layers is correct. .

If it is correct, the two-layer composite pattern data SYC ₁ is saved as correct data, and if there is an error, the pattern data SYC ₁ is corrected.

In the case of FIG. 14, since the operator can judge that the displayed two-layer composite pattern data SYC ₁ is correct, the two-layer composite pattern data SYC ₁ is set as the correct two-layer composite pattern data SYC ₂ at this stage. Save (103).

Then, the operator, as shown in FIG.
By combining the previous step three two-layer synthetic created by (103 steps) pattern data _{SYA 2, SYB 2, SYC 2} , the actual pattern data 2D _3, the auxiliary pattern data 3
Three-layer composite pattern data SY including AD ₃ , 3BD ₃ and shifter pattern data 4D ₃ is created and displayed on a display or the like.

Next, the operator displays the displayed three-layer composite pattern data SY and the three-layer composite pattern 10s of the design drawing.
The drawing is compared with y.

[0097] Here, for example, the actual pattern data 2D ₃ of the displayed three-layer composite pattern data SY, an auxiliary pattern data 3AD _3, 3BD _3, positional relationship between the shifter pattern data 4D _3, i.e., the three positions of the layers Inspect whether the relationship is correct.

If it is correct, the three-layer composite pattern data SY is saved as correct data, and if there is an error, the pattern data SY is corrected.

In the case of FIG. 15, since the operator can judge that the displayed three-layer composite pattern data SY is correct, the three-layer composite pattern data SY is saved as the pattern data of the phase shift mask pattern 1. The pattern data creation processing is ended (104).

As described above, according to the first embodiment, the following effects can be obtained.

(1). During the process of creating the phase shift mask pattern 1, data is created while inspecting and correcting the actual pattern data, the auxiliary pattern data and the shifter pattern data that make up the data, thereby ensuring reliability. The high phase shift mask pattern data 1 can be easily created.

(2). During the process of creating the phase shift mask pattern 1, the actual pattern data, the auxiliary pattern data and the shifter pattern data that make up the data are created while inspecting and correcting the data to create the phase shift mask. It becomes possible to find and correct design mistakes, arrangement mistakes, etc. of the pattern 1 at an early stage.

(3). By the above (1) and (2), it becomes possible to shorten the pattern data creation time of the phase shift mask pattern 1.

(4). Since the auxiliary pattern data layer 8 is further divided into a plurality of auxiliary pattern data layers 8a and 8b, the auxiliary pattern data can be processed easily, and the auxiliary pattern data can be processed quickly and delicately. Various processing is possible.

[0105]

[Embodiment 2] FIG. 16 is a flow chart for explaining a mask pattern data creating process which is another embodiment of the present invention.
18 is an overall plan view of a predetermined phase shift mask pattern on the phase shift mask, FIG. 18 is an overall plan view of the pattern transferred onto the semiconductor wafer by the phase shift mask pattern of FIG. 17, and FIG. 19 is a pattern of the phase shift mask pattern. 20 to 22 are explanatory views for explaining a data storage state during data preparation, and FIGS. 20 to 22 are explanatory views for explaining a process of creating two-layer composite pattern data and inspecting / correcting it.
FIG. 6 is an explanatory diagram illustrating a process of creating three-layer composite pattern data and inspecting / correcting it.

The phase shift mask pattern used in the description of the second embodiment and the pattern transferred onto the semiconductor wafer 1 using the phase shift mask pattern are shown in FIGS. 17 and 18, respectively. Note that the diagonal lines in FIG. 17 indicate light-shielding regions.

The phase shift mask pattern 1 is composed of actual patterns 2e to 2h, an auxiliary pattern 3c, and shifter patterns 4a and 4b.

The real patterns 2e to 2h are patterns having the same shape as the patterns 11e to 11h transferred onto the semiconductor wafer, and for example, two real patterns 2 parallel to each other.
e, 2f and the real patterns 2e, 2f are arranged,
In addition, it is composed of two real patterns 2g and 2h arranged with the auxiliary pattern 3c therebetween.

The patterns 11e to 11h shown in FIG.
Are patterns formed by transferring the actual patterns 2e to 2h, respectively.

The auxiliary pattern 3c is the actual patterns 2g, 2
It is an auxiliary pattern for forming a light transmitting region between h and is not transferred onto the semiconductor wafer by the action of the shifter pattern 4b as shown in FIG.

The shifter patterns 4a, 4a are arranged so as to draw a slightly larger line along the actual patterns 2e, 2f. The shifter pattern 4a is the actual pattern 2
It is a pattern of a transmissive film for giving a phase difference between the light transmitted through e and 2f and the light transmitted through the actual patterns 2g and 2h.

The shifter pattern 4b is arranged on the auxiliary pattern 3c. The shifter pattern 4b includes the auxiliary pattern 3c and the light transmitted through the actual patterns 2g and 2h.
It is a pattern of a transmissive film for giving a phase difference to the light transmitted through.

Next, the pattern data creating method according to the second embodiment will be described with reference to FIGS. 17 to 23 along the steps of FIG. 16 by taking the case of creating the pattern data of the phase shift mask pattern 1 of FIG. 17 as an example. .

First, in the second embodiment, as shown in FIG. 19, the phase shift mask pattern data 6 is converted into the actual pattern data layer 7, the auxiliary pattern data layer 8 and the shifter pattern data as in the first embodiment. Separate into layers 9.

At this time, in the second embodiment, the shifter pattern data layer 9 is further divided into a plurality of shifter pattern data layers 9a and 9b.

Even if the shifter patterns are the same, the data processing may be different, for example, the amount of Browdon is different. Therefore, it is easier to process the data by separating the shifter pattern data layers depending on the difference. This is because it is possible to achieve high speed and fine data processing.

For example, in the shifter pattern data layer 9a,
The pattern data during the formation of the shifter pattern 4a is stored, and the pattern data during the formation of the shifter pattern 4b is stored in the shifter pattern data layer 9b.

The pattern data of each of the pattern data layers 7 to 9 can be independently processed and combined. The pattern data of each pattern data layer 7 to 9 and their combined pattern data are displayed on a display or the like and can be viewed (101).

Next, the operator combines the actual pattern data of the actual pattern data layer 7 and the auxiliary pattern data of the auxiliary pattern data layer 8 separated in the previous step (101 step), and the two-layer combined pattern Display the data on a display etc.

At this time, it is assumed that, for example, a two-layer composite pattern SYA ₁ as shown in FIG. 20 is displayed on the display.

[0121] bilayer composite pattern SYA ₁ includes two and actual pattern data 2ED _1, 2fd ₁ of the parallel, and the real pattern 2ED _1, the actual pattern data disposed between 2FD ₁ 2GD _1, 2HD _1, The auxiliary pattern data 3CD ₁ is arranged so as to overlap the actual pattern data 2GD ₁ .

[0122] Incidentally, two-layer synthetic real pattern data of the pattern data _{SYA 1 2ED 1, 2FD 1,} 2GD 1, 2H
The D ₁ and the auxiliary pattern data 3CD ₁ correspond to the pattern data during creation of the actual patterns 2e to 2h and the auxiliary pattern 3c, respectively.

Subsequently, the worker displays the displayed two-layer composite pattern data SYA ₁ and the two-layer composite pattern 1 of the design drawing.
The drawing is compared with 0sya.

Here, for example, the real pattern data 2ED ₁ and 2F of the displayed two-layer composite pattern data SYA ₁ are displayed.
D ₁ , 2GD ₁ , 2HD ₁ and auxiliary pattern data 3C
It is checked whether or not the positional relationship with D ₁ , that is, the positional relationship between the two layers and the shape of each pattern data is correct.

If it is correct, the two-layer composite pattern data SYA ₁ is saved as correct data, and if there is an error, the pattern data SYA ₁ is corrected.

In the case of FIG. 20, the worker is to use the auxiliary pattern data 3C of the displayed two-layer composite pattern data SYA _1.
It can be determined that D ₁ overlaps the actual pattern data 2GD ₁ .

Therefore, the operator operates the keyboard or the like based on the position coordinate information of the auxiliary pattern 3c described in the design drawing so that the auxiliary pattern data 3CD ₁ is arranged at the position as the design drawing. Two-layer composite pattern data S
Correct YA ₁ .

Then, the corrected two-layer composite pattern data is stored as the correct two-layer composite pattern data SYA ₂ at this stage.

Correct two-layer composite pattern data SY
Actual pattern data 2ED ₂ of _{A 2, 2FD 2, 2GD 2} , 2H
The D ₂ and the auxiliary pattern data 3CD ₂ correspond to the pattern data during creation of the actual patterns 2e to 2h and the auxiliary pattern 3c, respectively.

Next, the operator combines the auxiliary pattern data of the auxiliary pattern data layer 8 and the shifter pattern data of the shifter pattern data layer 9 separated in the previous step (101 step), and the two-layer composite pattern Display the data on a display etc.

At this time, assume that a two-layer composite pattern SYB ₁ as shown in FIG. 21, for example, is displayed on the display.

The two-layer composite pattern SYB ₁ is composed of two shifter pattern data 4AD ₁ and 4AD parallel to each other.
₁ and shifter pattern data 4BD ₁ arranged in the center between them, and auxiliary pattern data 3CD ₁ arranged slightly to the left of the shifter pattern data 4BD ₁ .

The auxiliary pattern data 3CD ₁ and the shifter pattern data 4AD ₁ and 4BD ₁ of the two-layer composite pattern data SYB ₁ are the auxiliary patterns 3c and 4BD ₁ , respectively.
It corresponds to the pattern data during the formation of the shifter patterns 4a and 4b.

Subsequently, the operator selects the displayed two-layer composite pattern data SYB ₁ and the two-layer composite pattern 1 of the design drawing.
The drawing is performed by comparing with 0 syb.

Here, for example, the auxiliary pattern data 3CD _{1 of the} displayed two-layer composite pattern data SYB ₁
It is checked whether or not the positional relationship with the shifter pattern data 4AD ₁ and 4BD ₁ , that is, the positional relationship between the two layers and the shape of each pattern data is correct.

If it is correct, the two-layer composite pattern data SYB ₁ is saved as correct data, and if there is an error, the pattern data SYB ₁ is corrected.

In the case of FIG. 21, the worker is to use the auxiliary pattern data 3C of the displayed two-layer composite pattern data SYB _1.
It can be determined that the position of D ₁ is displaced.

Therefore, the operator operates the keyboard or the like based on the information of the position coordinates of the auxiliary pattern 3c described in the design drawing so that the auxiliary pattern data 3CD ₁ is arranged at the position according to the design drawing. Two-layer composite pattern data S
Correct YB ₁ .

Then, the corrected composite pattern data is converted into the correct two-layer composite pattern data SY at this stage.
Save as B ₂ .

Correct two-layer composite pattern data SY
B ₂ of the auxiliary pattern data 3CD ₂ and the shifter pattern data 4AD _2, 4bd ₂ are each auxiliary pattern 3c and the shifter patterns 4a, corresponding to the pattern data during the creation of 4b.

Next, the operator synthesizes the actual pattern data of the actual pattern data layer 7 and the shifter pattern data of the shifter pattern data layer 9 separated in the previous step (101 step), and the two-layer synthetic pattern Display the data on a display etc.

At this time, it is assumed that, for example, the two-layer composite pattern SYC ₁ as shown in FIG. 22 is displayed on the display.

[0143] bilayer composite pattern SYC ₁ includes two and actual pattern data 2ED _1, 2fd ₁ of the parallel, and the real pattern 2ED _1, the actual pattern data disposed between 2FD ₁ 2GD _1, 2HD _1, Actual pattern data 2ED
Two shifter pattern data 4AD overlapping ₁ and 2FD _1
1 and 4AD ₁ and shifter pattern data 4BD ₁ arranged between the actual pattern data 2GD ₁ and 2HD ₁ .

[0144] Incidentally, two-layer synthetic real pattern data of the pattern data _{SYC 1 2ED 1, 2FD 1,} 2GD 1, 2H
D ₁ and shifter pattern data 4AD ₁ , 4BD
₁ corresponds to the pattern data during the formation of the actual patterns 2e to 2h and the shifter patterns 4a and 4b, respectively.

Subsequently, the operator, as shown in FIG.
The two-layer composite pattern data SYC ₁ displayed, the actual patterns 2e to 2h and the shifter patterns 4a, 4 of the design drawing are displayed.
The drawing is performed by comparing with the two-layer composite pattern 10syc of b.

Here, for example, the actual pattern data 2ED _2, 2FD of the displayed two-layer composite pattern data SYC ₁ is displayed.
_2, 2GD _2, 2HD ₂ and shifter pattern data 4AD _2, 4
It is checked whether the positional relationship with BD ₂ , that is, the positional relationship between the two layers and the shape of each pattern data is correct.

If it is correct, the two-layer composite pattern data SYC ₁ is saved as correct data, and if there is an error, the pattern data SYC ₁ is corrected.

In the case of FIG. 22, since the operator can judge that the displayed two-layer composite pattern data SYC ₁ is correct, the two-layer composite pattern data SYC ₁ is set as the correct two-layer composite pattern data SYC ₂ at that stage. Save (102).

Then, the operator, as shown in FIG.
The three correct two-layer composite pattern data SYA ₂ , SYB ₂ and SYC ₂ created in the previous step (step 102) are combined to create three-layer composite pattern data SY, which is displayed on a display or the like.

The three-layer composite pattern data SY includes two real pattern data 2ED ₂ and 2FD ₂ which are parallel to each other.
And the real pattern data 2ED _2, the actual pattern data disposed between 2FD ₂ 2GD _2, 2HD _2, and the auxiliary pattern data 3CD ₂ arranged in contact with them between the real pattern data 2GD _2, 2HD _2, the real pattern data 2ED _2, 2fd two shifter pattern data 4AD ₂ overlapping _2, 4AD2, and a shifter pattern data 4bd ₂ Metropolitan overlapping the auxiliary pattern data 3CD _2.

Subsequently, the worker displays the displayed three-layer composite pattern data SY and the three-layer composite pattern 10s of the design drawing.
The drawing is compared with y.

Here, for example, the actual pattern data 2ED ₂ , 2F of the displayed three-layer composite pattern data SY is displayed.
D ₂ , 2GD ₂ , 2HD ₂ and auxiliary pattern data 3C
It is checked whether or not the positional relationship between D ₂ and the shifter pattern data 4A ₂ and 4BD ₂ , that is, the positional relationship between the three layers is correct.

If it is correct, the three-layer composite pattern data SY is saved as correct data, and if there is an error, the pattern data SY is corrected.

In the case of FIG. 23, since the operator can judge that the displayed three-layer composite pattern data SY is correct, the three-layer composite pattern data SY is saved as the pattern data of the phase shift mask pattern 1. The pattern data creation processing is ended (103).

As described above, according to the second embodiment, the following effects can be obtained in addition to the effects (1) to (3) obtained in the first embodiment.

That is, by separating the shifter pattern data layer 9 into a plurality of shifter pattern data layers 9a and 9b, the shifter pattern data can be easily processed, and the shifter pattern data can be processed at high speed and finely. Is possible.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the first and second embodiments, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.

For example, in the first and second embodiments, the case where the two-layer composite pattern data is created during the pattern data of the phase shift mask pattern has been described.
The present invention is not limited to this, and the following may be adopted, for example.

First, the phase shift mask pattern data is separated into an actual pattern data layer, an auxiliary pattern data layer and a shifter pattern data layer.

Subsequently, the pattern data of the actual pattern data layer, the auxiliary pattern data layer, and the shifter pattern data layer are individually inspected and corrected.

After that, the correct actual pattern data, auxiliary pattern data, and shifter pattern data obtained by the drawing inspection / correction in the previous process are all combined to create three-layer combined pattern data.

Then, the three-layer composite pattern data is inspected, and if there is no error, the three-layer composite pattern data is used as the phase shift mask pattern data. If there is an error, it is corrected and the corrected three-layer composite pattern data is obtained. Use as phase shift mask pattern data.

Also in this case, it is possible to obtain the same effects as those of the first and second embodiments.

Further, in the first and second embodiments, the case where the three correct two-layer composite pattern data are all combined in the final step to create the three-layer composite pattern data has been described, but the present invention is not limited to this. However, it is possible to make various changes, and for example, at least two of the three correct two-layer composite pattern data may be combined to create three-layer composite pattern data.

Further, for example, the following may be done. First, one of the three correct two-layer composite pattern data is selected. Then, the selected correct two-layer composite pattern data is combined with one layer of correct actual pattern data, auxiliary pattern data or shifter pattern data which is not included in the two-layer composite pattern data to create three-layer composite pattern data.

In the first embodiment, the case where the present invention is applied to the pattern data creating method of the phase shift mask pattern for forming the T-shaped transfer pattern on the semiconductor wafer is explained, but the present invention is not limited to this. However, the present invention can be applied to the creation of pattern data of the phase shift mask pattern 1 as shown in FIG. 24, for example.

The phase shift mask pattern 1 shown in FIG.
Pattern 1 for forming connection holes as shown in FIG.
2 is a pattern for transferring 2 onto the semiconductor wafer.

The actual pattern 2 of the phase shift mask pattern 1 of FIG. 24 is a pattern of the same shape as the pattern 12 of FIG. 25, and is formed in a rectangular shape, for example.

At the four corners of the real pattern 2, for example, auxiliary patterns 3d having a minute rectangular shape are arranged. The auxiliary pattern 3d is a pattern for increasing the light intensity at the corner portion of the actual pattern 2 to prevent image blurring at the transfer pattern portion at that corner portion.

At the four sides of the actual pattern 2, four auxiliary patterns 3e are arranged in parallel along the sides. The auxiliary pattern 3e is a pattern for forming a transmissive region that transmits light having a phase different from that of the light that passes through the actual pattern 2, and thus, the resolution of the transfer pattern portion on the four sides of the actual pattern 2 can be improved. it can.

The shifter pattern 4 is arranged so as to draw a rectangle slightly larger than the line of the auxiliary pattern 3e. The shifter pattern 4 is a pattern of a transmissive film that gives a phase difference to light transmitted through the real pattern 2 and the auxiliary pattern 3e.

Further, in the first and second embodiments, the case where the present invention is applied to the generation of the pattern data of the phase shift mask pattern which requires the auxiliary pattern has been described. However, the present invention is not limited to this and the auxiliary The present invention can be applied to the generation of pattern data of a phase shift mask pattern that does not require a pattern, for example, two patterns that run parallel to each other are transferred onto a semiconductor wafer.

[0173]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
It is as follows.

(1) In other words, according to the above-mentioned first invention, while the pattern data of the phase shift mask is being created, the actual pattern data, the auxiliary pattern data and the shifter pattern data constituting the pattern data are individually By creating the entire pattern data of the phase shift mask pattern while inspecting and correcting it, it becomes possible to easily create highly reliable pattern data of the phase shift mask.

Further, while the pattern data of the phase shift mask is being created, the entire pattern data is created by inspecting and correcting the actual pattern data, the auxiliary pattern data and the shifter pattern data which form the pattern data. It is possible to detect a design error, a layout error, etc. of the pattern data of the phase shift mask at an early stage and correct it.

Therefore, it is possible to shorten the time for creating the pattern data of the phase shift mask.

(2) According to the second aspect of the invention described above, the shifter pattern data and the auxiliary pattern data can be easily processed, and at the same time, can be processed at high speed. Therefore, it becomes possible to easily create the entire pattern data of the phase shift mask.

[Brief description of drawings]

FIG. 1 is a flowchart illustrating a mask pattern data creation process that is an embodiment of the present invention.

FIG. 2 is an overall plan view of a predetermined phase shift mask pattern on a phase shift mask.

FIG. 3 is an overall plan view of a pattern transferred onto a semiconductor wafer by the phase shift mask pattern of FIG.

FIG. 4 is an explanatory diagram illustrating a data storage state during generation of pattern data of a phase shift mask pattern.

FIG. 5 is an explanatory diagram illustrating a step of separately inspecting / correcting actual pattern data, auxiliary pattern data, and shifter pattern data.

FIG. 6 is an explanatory diagram illustrating a step of separately inspecting / correcting actual pattern data, auxiliary pattern data, and shifter pattern data.

FIG. 7 is an explanatory diagram illustrating a step of individually inspecting / correcting actual pattern data, auxiliary pattern data, and shifter pattern data.

FIG. 8: Creates two-layer composite pattern data and inspects it
It is explanatory drawing explaining the process to correct.

FIG. 9: Creates two-layer composite pattern data and inspects it
It is explanatory drawing explaining the process to correct.

FIG. 10 is an explanatory diagram illustrating a modified example of pattern data processing.

FIG. 11 is an explanatory diagram illustrating a process of creating two-layer composite pattern data and inspecting / correcting it.

FIG. 12 is an explanatory diagram illustrating a process of creating two-layer composite pattern data and inspecting / correcting it.

FIG. 13 is an explanatory diagram illustrating a process of creating two-layer composite pattern data and inspecting / correcting it.

FIG. 14 is an explanatory diagram illustrating a process of creating two-layer composite pattern data and inspecting / correcting it.

FIG. 15 is an explanatory diagram illustrating a process of creating three-layer composite pattern data and inspecting / correcting it.

FIG. 16 is a flow diagram illustrating a mask pattern data creation process that is another embodiment of the present invention.

FIG. 17 is an overall plan view of a predetermined phase shift mask pattern on the phase shift mask.

18 is an overall plan view of a pattern transferred onto a semiconductor wafer by the phase shift mask pattern of FIG.

FIG. 19 is an explanatory diagram illustrating a data storage state during generation of pattern data of a phase shift mask pattern.

FIG. 20 is an explanatory diagram illustrating a process of creating two-layer composite pattern data and inspecting / correcting it.

FIG. 21 is an explanatory diagram illustrating a process of creating two-layer composite pattern data and inspecting / correcting it.

FIG. 22 is an explanatory diagram illustrating a process of creating two-layer composite pattern data and inspecting / correcting it.

FIG. 23 is an explanatory diagram illustrating a process of creating three-layer composite pattern data and inspecting / correcting it.

FIG. 24 is an overall plan view of a predetermined phase shift mask pattern on a phase shift mask that is another embodiment of the present invention.

25 is an overall plan view of a pattern transferred onto a semiconductor wafer by the phase shift mask pattern of FIG. 24.

FIG. 26 is an explanatory diagram for explaining that a mask pattern on a conventional phase shift mask is different from a pattern to be formed on a semiconductor wafer.

FIG. 27 is an explanatory diagram for explaining that a mask pattern on a conventional phase shift mask is different from a pattern to be formed on a semiconductor wafer.

FIG. 28 is an explanatory diagram for explaining that a mask pattern on a conventional phase shift mask is different from a pattern to be formed on a semiconductor wafer.

FIG. 29 is an explanatory diagram for explaining that a mask pattern on a conventional phase shift mask is different from a pattern to be formed on a semiconductor wafer.

FIG. 30 is an explanatory diagram for explaining that a mask pattern on a conventional phase shift mask is different from a pattern to be formed on a semiconductor wafer.

FIG. 31 is an explanatory diagram for explaining that a mask pattern on a conventional phase shift mask is different from a pattern to be formed on a semiconductor wafer.

[Explanation of symbols]

1 phase shift mask pattern 2 actual pattern 2a horizontal bar 2b vertical bar 2c corner 2e actual pattern 2f actual pattern 2g actual pattern 2h actual pattern 2D ₁ actual pattern data 2D ₂ correct actual pattern data 2D ₃ actual pattern data 2ED ₁ actual pattern data 2ED ₂ correct actual pattern data 2fd ₁ real pattern data 2fd ₂ correct actual pattern data 2GD ₁ real pattern data 2GD ₂ correct actual pattern data 2HD ₁ real pattern data 2HD ₂ correct actual pattern data 3 auxiliary pattern 3a auxiliary pattern 3b auxiliary pattern 3c auxiliary pattern 3d auxiliary pattern 3e auxiliary pattern 3D ₁ auxiliary pattern data 3D ₂ correct auxiliary pattern data 3D ₃ auxiliary pattern data 3AD ₁ auxiliary pattern data 3AD ₂ correct auxiliary pattern data 3AD ₃ auxiliary pattern data 3 BD ₁ auxiliary pattern data 3BD ₂ correct auxiliary pattern data 3BD ₃ auxiliary pattern data 3CD ₁ auxiliary pattern data 3CD ₂ correct auxiliary pattern data 4 shifter pattern 4a shifter pattern 4b shifter pattern 4D ₁ shifter pattern data 4D ₂ correct shifter pattern data 4D ₃ shifter Pattern data 4AD ₁ Shifter pattern data 4AD ₂ Correct shifter pattern data 4BD ₁ Shifter pattern data 4BD ₂ Correct shifter pattern data 5 Pattern 6 Phase shift mask pattern data 7 Real pattern data layer 8 Auxiliary pattern data layer 8a Auxiliary pattern data layer 8b Auxiliary pattern Data layer 9 Shifter pattern Data layer 9a Shifter pattern data layer 9b Shifter pattern data layer 10sya Two-layer composite pattern 10syb Two-layer composite pattern 10 yc bilayer composite pattern 10sy trilayer composite pattern 11e actual pattern 11f real pattern 11g real pattern 11h real pattern 12 pattern SYA ₁ bilayer composite pattern data SYA ₂ correct bilayer composite pattern data SYB ₁ bilayer composite pattern data SYB ₂ correct two Layer composite pattern data SYC ₁ Two layer composite pattern data SYC ₂ Correct two layer composite pattern data SY Three layer composite pattern data 50 pattern 50a pattern 50b pattern 50c pattern 50d pattern 51 pattern 51a pattern 51b pattern 51c pattern 51d pattern 52a phase shift pattern film 52b Phase shift pattern film 52c Phase shift pattern film 53a Auxiliary pattern 54 pattern 54a pattern 54b pattern 54c pattern

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Noboru Moriuchi             2326 Imai, Ome-shi, Tokyo Hitachi, Ltd.             In Manufacturing Device Development Center (72) Inventor Seiichiro Shirai             2326 Imai, Ome-shi, Tokyo Hitachi, Ltd.             In Manufacturing Device Development Center

Claims (6)

[Claims] 1. A method of creating pattern data of a mask having a mask pattern and a phase shift pattern on a mask substrate, wherein the pattern data is an actual pattern data layer having actual pattern data and an auxiliary pattern data layer having auxiliary pattern data. And a data separation step of laying out the phase shift pattern data layer having the phase shift pattern data separately, the actual pattern data,
First inspection correction step of separately inspecting and correcting auxiliary pattern data and phase shift pattern data, and correct actual pattern data, auxiliary pattern data and phase shift of the stage obtained by the first inspection correction step A second pattern inspection / correction step of inspecting and correcting three-layer composite pattern data obtained by combining pattern data. 2. The mask pattern data creating method according to claim 1, wherein at least one of the phase shift pattern data layer and the auxiliary pattern data layer is divided into two or more data layers. 3. A pattern data creating method for a mask having a mask pattern and a phase shift pattern on a mask substrate, wherein the pattern data is an actual pattern data layer having actual pattern data and an auxiliary pattern data layer having auxiliary pattern data. And a data separation step of laying out the phase shift pattern data layer having the phase shift pattern data separately, the actual pattern data,
A first inspection correction step of inspecting and correcting three two-layer composite pattern data obtained by combining two pieces of auxiliary pattern data and phase shift pattern data in different combinations, and the first inspection correction step A second inspection correction step of inspecting and correcting the three-layer composite pattern data obtained by combining at least two of the three correct two-layer composite pattern data obtained at that stage. A method of creating pattern data of a characteristic mask. 4. The mask pattern data creating method according to claim 3, wherein at least one of the phase shift pattern data layer and the auxiliary pattern data layer is divided into two or more data layers. 5. A method for creating pattern data of a mask having a mask pattern and a phase shift pattern on a mask substrate, wherein the pattern data is an actual pattern data layer having actual pattern data, and an auxiliary pattern data layer having auxiliary pattern data. And a data separation step of laying out the phase shift pattern data layer having the phase shift pattern data separately, the actual pattern data,
First inspection correction step of separately inspecting and correcting auxiliary pattern data and phase shift pattern data, and correct actual pattern data, auxiliary pattern data and phase shift at that stage obtained by the first inspection correction step A second inspection correction step of inspecting and correcting three two-layer composite pattern data obtained by combining two pieces of pattern data in different combinations, and the stage obtained by the second inspection correction step A three-layer composite pattern data obtained by synthesizing at least two of the three correct two-layer composite pattern data in 3) Data creation method. 6. The mask pattern data creating method according to claim 5, wherein at least one of the phase shift pattern data layer and the auxiliary pattern data layer is divided into two or more data layers.