JPH01112600A - Service life decision device for storage element - Google Patents
Service life decision device for storage elementInfo
- Publication number
- JPH01112600A JPH01112600A JP62269608A JP26960887A JPH01112600A JP H01112600 A JPH01112600 A JP H01112600A JP 62269608 A JP62269608 A JP 62269608A JP 26960887 A JP26960887 A JP 26960887A JP H01112600 A JPH01112600 A JP H01112600A
- Authority
- JP
- Japan
- Prior art keywords
- data
- write
- writes
- memory element
- cpu
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はE2FROMなどの半導体不揮発性記憶素子が
制御回数を越えて使用されることがないようにした記憶
素子の寿命’l’lJ定装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a device for determining the lifespan of a semiconductor non-volatile memory element such as an E2FROM so that it is not used more than a controlled number of times.
従来の技術
従来の記憶素子の寿命ヤJ定装置としては、例えば特開
昭62−200800号公報にある第5図のような構成
が提案されている。第5図中1は、中央演算処理装置(
以下CPUと略す)である。2. Description of the Related Art As a conventional device for determining the life span of a memory element, a configuration as shown in FIG. 5, for example, has been proposed in Japanese Patent Application Laid-Open No. 62-200800. 1 in Figure 5 is the central processing unit (
(hereinafter abbreviated as CPU).
今、E 2 F ROMなどの記憶素子2にデータを書
き込む必要があるとき、CPU1はリード/ライト制御
装置3に書き込み信号WRを送出するとともに、乱数発
生器5を参照し、一定確率で起こる事象に遭遇した場合
にのみ、記憶素子2内の1個の書き込み回数カウントエ
リアの内容を更新し、この更新値にもとづき記憶素子2
への書き込み回数が制限値に達したか否かを1’lJ断
するものである。Now, when it is necessary to write data to a storage element 2 such as an E 2 F ROM, the CPU 1 sends a write signal WR to the read/write control device 3, and at the same time refers to the random number generator 5 to detect events that occur with a certain probability. Only when this is encountered, the contents of one write count area in the memory element 2 are updated, and the memory element 2 is updated based on this updated value.
This is to determine whether the number of writes to has reached the limit value.
さらに書き込み回数が制限値に達した時、記憶素子2中
の未使用データエリアがなければ、記憶素子2の寿命と
ヤj断し警報装置4から外部に警報を発するしくみにな
っている。なお、記憶素子2はE2PROM(7)ほか
、EAROM−?NVRAMなどの半導体不揮発性メモ
リであり、書き込み回数の限界値が例えばルジスタにつ
き(すなわち各アドレスごとに)10000回までとな
っている。Further, when the number of writes reaches a limit value, if there is no unused data area in the memory element 2, the life of the memory element 2 is terminated and an alarm is issued from the alarm device 4 to the outside. Note that the memory element 2 is an E2PROM (7) or an EAROM-? It is a semiconductor nonvolatile memory such as NVRAM, and the limit value of the number of writes is, for example, up to 10,000 times per register (that is, for each address).
発明が解決しようとする問題点
しかしながら上記のような構成では、データ書き込み時
に更新される内容を格納するカウントエリアは第6図の
メモリマツプに示されるように、各アドレスごとに対応
して設けられてはいない。Problems to be Solved by the Invention However, in the above configuration, the count area for storing the contents updated when data is written is provided corresponding to each address, as shown in the memory map of FIG. Not there.
そのため記lJ!素子2に対して合計何回の書き込み動
作がなされたかは知ることができるが、頃発に書き込み
動作がなされるアドレスとそうでないアドレスとの差異
を識別し、各アドレスごとの書き込み回数をカウントで
きない、すなわち記憶素子が保証している本当の限界値
を把握できないという問題点を有していた。Therefore, it is recorded! Although it is possible to know the total number of write operations performed on element 2, it is not possible to identify the difference between addresses to which write operations occur from time to time and addresses that do not, and to count the number of write operations for each address. In other words, there was a problem in that the true limit value guaranteed by the memory element could not be grasped.
本発明はかかる従来の問題を解消するもので、この記憶
素子にデータを書き込むごとに、対応する各アドレスの
書き込み回数を更新し、その内容を合わせて記憶素子に
書き込むことによって、各アドレスごとに制御値を越え
て記憶素子へ嘗き込むことを未然に防止することを目的
とする。The present invention solves this conventional problem, and each time data is written to the memory element, the number of writes for each corresponding address is updated, and the contents are written together to the memory element. The purpose of this is to prevent data from exceeding a control value from being written into a storage element.
問題点を解決するための手段
上記問題点を解決するために本発明の記憶素子の寿命判
定装置は、記憶素子の所定数のデータエリアの中で、書
き込み/読み出しされる任意データの格納されるデータ
エリアと、そのデータエリアに1対1で対応する書き込
み回数カウントエリアを設けることによって、各アドレ
スごとの書き込み回数を把握するという構成を備えたも
のである。Means for Solving the Problems In order to solve the above-mentioned problems, the lifespan determination device for a memory element of the present invention provides a method for determining the lifespan of a memory element in which arbitrary data to be written/read is stored in a predetermined number of data areas of a memory element. By providing a data area and a write count area that corresponds one-to-one to the data area, the number of writes for each address can be ascertained.
作 用
本発明は上記した構成によって、記憶素子への書き込み
回数合計だけではなく各アドレスごとに独立して書き込
み回数を把握できるため、その記憶素子で定められてい
る寿命を最大限に生かすことになる。例えば、あるアド
レスへの書き込み回数だけが制限数を越えた場合、該当
するデータエリア及びカウントエリアのみを記憶素子内
の未使用エリアに切り換えたり、警報を発することがで
きる。Function: With the above-described configuration, the present invention is able to grasp not only the total number of writes to the memory element but also the number of writes independently for each address, making it possible to make the most of the lifespan specified for the memory element. Become. For example, if only the number of writes to a certain address exceeds the limit, only the corresponding data area and count area can be switched to an unused area in the storage element, or an alarm can be issued.
実施例
以下、本発明の実施例を添付図面にもとすいて説明する
。、第1図は記憶素子の寿命判定装置を示すブロック図
であり、第2図は記憶素子のメモリマツプ図である。例
えばn個あるデータエリアに対し、各々のデータエリア
の一部をカウントエリアに割りあてるものとする。すな
わち各アドレスAi(i二1.n)にはデータDiおよ
び書き込み回数Ciが複合された構成で格納されている
。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. , FIG. 1 is a block diagram showing an apparatus for determining the lifespan of a memory element, and FIG. 2 is a memory map diagram of the memory element. For example, assume that among n data areas, a part of each data area is allocated to a count area. That is, each address Ai (i21.n) stores data Di and the number of writes Ci in a combined configuration.
まずCPU1が記憶素子2のアドレスAtにデータD
i’の書き込みをする必要が生じた七きの処理を第3図
フローチャートにしたがって説明する。First, the CPU 1 stores the data D at the address At of the storage element 2.
The process in which it becomes necessary to write i' will be explained with reference to the flowchart of FIG.
CPU1はリード/ライト制御装置3に対し、アドレス
Atを指定して読み出し要求信号DRを送出する。次に
記憶素子2は、リード/ライト制御装置3からこの要求
信号を受け、以前からアドレスAtに格納されているデ
ータDiie込み回数Ciの内容をリード/ライト制御
装置3に受は渡す。そこでCPU1はこれを読み取りデ
ータDiを新たに書き込みたい内容Di’に置きかえる
とともに、書き込み回数Ciのカウントデータをインク
リメントしてci’とすム(Ci’=Ci+1)このよ
うに新たにアドレスAiに格納すべきデータD(および
書き込み回数Ci’の内容を構成して、CPU1はリー
ド/ライト制御装置3に書き込み要求信号WRを送出す
る。これを受けてリード/ライト制御装置3は記憶素子
2のアドレスAtに対し新たに構成された内容(Di’
およびCi’)を書き込む。ところで、もしCPU1が
データDtおよび書き込み回数Ciの内容を読み出した
時点で書き込み回数Ciが制限値に達していた場合は、
Atデータエリアは抹消し警報装置6によって外部に報
知する等の異常処理に入るものである。ここで書き込み
回数Ciの更ffr(インクメント)は、毎回の書き込
み動作ごとではなく、例えば10回や100回に1度行
なうものとしてもよい。The CPU 1 sends a read request signal DR to the read/write control device 3, specifying the address At. Next, the storage element 2 receives this request signal from the read/write control device 3 and passes the contents of the data input count Ci previously stored at the address At to the read/write control device 3. Therefore, the CPU 1 reads this data and replaces the data Di with the new content Di' to be written, and increments the count data of the number of writes Ci to become ci'(Ci' = Ci + 1). The CPU 1 sends the write request signal WR to the read/write control device 3 after configuring the data D to be written (and the contents of the number of writes Ci'). The newly configured content (Di'
and Ci'). By the way, if the number of writes Ci has reached the limit value at the time the CPU 1 reads out the data Dt and the contents of the number of writes Ci, then
The At data area is used for abnormal processing such as notification to the outside by the erasure alarm device 6. Here, the number of writes Ci is incremented not every write operation, but may be done, for example, once every 10 or 100 times.
また第2図のメモリマツプのように一つのアドレスAt
のデータエリア内の構成をデータDi部分と書き込み回
数Ci部分′に分割するのではなく、例えば第4図のメ
モリマツプに示すように、2つのアドレスA2i 1
.A21(i=1〜n/2)のデータエリアを各々デー
タDi部分、書き込み回数Ci部分に対応させる方法も
考えられる。Also, as shown in the memory map in Figure 2, one address At
Instead of dividing the structure in the data area into a data Di part and a write count Ci part', for example, as shown in the memory map of FIG.
.. It is also conceivable to make the data areas A21 (i=1 to n/2) correspond to the data Di portion and the write count Ci portion, respectively.
上記構成において各アドレスに任意に書き込まれるデー
タのエリアとその書き込み回数カウントエリアが1対1
に対応しているため、記憶素子内のアドレスごとの寿命
判定がなされるよう作用し、その記憶素子で定められて
いる寿命を最大限に生かすことができるという効果があ
る。In the above configuration, the area for data arbitrarily written to each address and the area for counting the number of writes are 1:1.
Since it corresponds to the above, it is possible to determine the lifespan of each address in the memory element, thereby making it possible to make the most of the lifespan specified for the memory element.
発明の効果
以上のように本発明の記憶素子の寿命判定装置によれば
、アドレスごとに書き込み回数が記憶素子の寿命に達し
たことを自動的に#4J定するような構成としたことに
より、記憶素子の書き込み回数の制限値を気にしないで
システムを構築することができるため′、このような記
憶素子を用いたシステム全体の動作安定性、信頼性を向
上できるという効果がある。Effects of the Invention As described above, according to the memory element life determination device of the present invention, by having a structure that automatically determines #4J that the number of writes has reached the memory element life for each address, Since a system can be constructed without worrying about the limit value of the number of times of writing to a memory element, there is an effect that the operational stability and reliability of the entire system using such a memory element can be improved.
第1図は本発明の一実施例における記憶素子の寿命′l
!Iノ定装置のブロック図、第2図は同装置の記憶素子
内のメモリマツプ図、第3図は同寿命!l!IJ定処理
のフローチャートへ1第4図は回能のス施例における記
憶素子内のメモリマツプ図、第5図は従来の記憶素子の
寿命判断装置のブロック図、第6図は従来の記憶素子内
のメモリマツプ図である。
1・・・・・・CPU、2・・・・・・記憶素子、3・
・・・・・リード/ライト制御装置、4・・・・・・警
報装置。FIG. 1 shows the life 'l of a memory element in one embodiment of the present invention.
! Figure 2 is a block diagram of the I-no-determination device, Figure 2 is a memory map diagram of the memory element of the same device, and Figure 3 is the same lifespan! l! To the flowchart of the IJ determination process 1. Figure 4 is a memory map diagram inside the memory element in the embodiment of the current cycle, Figure 5 is a block diagram of a conventional memory element life judgment device, and Figure 6 is a diagram showing the memory map inside the conventional memory element. FIG. 1...CPU, 2...Storage element, 3.
... Read/write control device, 4 ... Alarm device.
Claims (1)
にデータを書き込んだり、この書き込んだデータを読み
み出したりするためのリード/ライト制御装置と、前記
記憶素子にデータの書き込みに際し、各データの格納さ
れるアドレスごとに書き込み回数を付与したデータ構成
で、前記リード/ライト制御装置に書き込み指示を与え
、前記記憶素子の各データごとの書き込み回数が制限値
に達したか否かを判断する中央演算処理装置と、前記中
央演算処理装置に接続され、書き込み回数が制限値に達
した場合、外部に報知する警報装置とを備えた記憶素子
の寿命判定装置。A memory element with a limited number of write operations, a read/write control device for writing data to the memory element and reading the written data, and a read/write control device for writing data to the memory element. A central controller that instructs the read/write control device to write in a data structure in which a number of writes is assigned to each stored address, and determines whether the number of writes for each data in the storage element has reached a limit value. A device for determining the lifespan of a memory element, comprising: an arithmetic processing unit; and an alarm device connected to the central processing unit to notify an external party when the number of writes reaches a limit value.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62269608A JPH01112600A (en) | 1987-10-26 | 1987-10-26 | Service life decision device for storage element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62269608A JPH01112600A (en) | 1987-10-26 | 1987-10-26 | Service life decision device for storage element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01112600A true JPH01112600A (en) | 1989-05-01 |
Family
ID=17474727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62269608A Pending JPH01112600A (en) | 1987-10-26 | 1987-10-26 | Service life decision device for storage element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01112600A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0478946A (en) * | 1990-07-20 | 1992-03-12 | Nec Corp | Monitoring system for memory |
JPH04271098A (en) * | 1991-02-25 | 1992-09-28 | Fuji Photo Film Co Ltd | Data recording method for memory card and memory card system |
US5815440A (en) * | 1992-12-03 | 1998-09-29 | Fujitsu Limited | Semiconductor memory device with electrically controllable threshold voltage |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS626499A (en) * | 1985-07-03 | 1987-01-13 | Fuji Electric Co Ltd | Life supervisory system for eeprom |
-
1987
- 1987-10-26 JP JP62269608A patent/JPH01112600A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS626499A (en) * | 1985-07-03 | 1987-01-13 | Fuji Electric Co Ltd | Life supervisory system for eeprom |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0478946A (en) * | 1990-07-20 | 1992-03-12 | Nec Corp | Monitoring system for memory |
JPH04271098A (en) * | 1991-02-25 | 1992-09-28 | Fuji Photo Film Co Ltd | Data recording method for memory card and memory card system |
US5815440A (en) * | 1992-12-03 | 1998-09-29 | Fujitsu Limited | Semiconductor memory device with electrically controllable threshold voltage |
US6288945B1 (en) | 1992-12-03 | 2001-09-11 | Fujitsu Limited | Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics |
US6414874B2 (en) | 1992-12-03 | 2002-07-02 | Fujitsu Limited | Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics |
US6563738B2 (en) | 1992-12-03 | 2003-05-13 | Fujitsu Limited | Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics |
US6611464B2 (en) | 1992-12-03 | 2003-08-26 | Fujitsu Limited | Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics |
US6618288B2 (en) | 1992-12-03 | 2003-09-09 | Fujitsu Limited | Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics |
US6646920B2 (en) | 1992-12-03 | 2003-11-11 | Fujitsu Limited | Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics |
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