JP5732552B2 - Display device - Google Patents

Description

The present invention relates to a semiconductor device having a circuit formed of a thin film transistor (hereinafter referred to as TFT) and a method for manufacturing the semiconductor device. For example, the present invention relates to an electro-optical device typified by a liquid crystal display panel and an electronic apparatus in which such an electro-optical device is mounted as a component.

Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

In recent years, a technique for forming a thin film transistor (TFT) using a semiconductor thin film (having a thickness of about several to several hundred nm) formed on a substrate having an insulating surface has attracted attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and development of switching devices for image display devices is urgently required.

Conventionally, a liquid crystal display device is known as an image display device. Active matrix liquid crystal display devices are often used because high-definition images can be obtained compared to passive liquid crystal display devices. In an active matrix liquid crystal display device, a display pattern is formed on a screen by driving pixel electrodes arranged in a matrix. Specifically, by applying a voltage between the selected pixel electrode and the counter electrode corresponding to the pixel electrode, optical modulation of the liquid crystal layer disposed between the pixel electrode and the counter electrode is performed. The optical modulation is recognized by the observer as a display pattern.

Applications of such active matrix liquid crystal display devices are expanding, and demands for higher definition, higher aperture ratio, and higher reliability are increasing as the screen size increases. At the same time, demands for improved productivity and lower costs are increasing.

Conventionally, an amorphous silicon film is suitably used as the amorphous semiconductor film because it can be formed on a large-area substrate at a low temperature of 300 ° C. or lower. Further, an inverted staggered (or bottom gate type) TFT having a channel formation region formed of an amorphous semiconductor film is often used.

Conventionally, active matrix type liquid crystal display devices are photolithography.
Due to the technology, TFTs were fabricated on a substrate using at least five photomasks, and the manufacturing cost was high. In order to improve productivity and improve yield, reducing the number of steps is considered as an effective means.

Specifically, it is necessary to reduce the number of photomasks required for manufacturing TFTs.
A photomask is used in photolithography to form a photoresist pattern as a mask for an etching process on a substrate.

By using one photomask, the steps such as resist coating, pre-baking, exposure, development, and post-baking, and the steps before and after that, such as film formation and etching, resist stripping, cleaning, and drying are performed. The process is added and becomes complicated,
It was a problem.

In addition, since the substrate is an insulator, static electricity is generated due to friction during the manufacturing process. When this static electricity is generated, a short circuit occurs at the intersection of the wirings provided on the substrate, or the TFT is deteriorated or destroyed by the static electricity, resulting in display defects or image quality deterioration in the liquid crystal display device. In particular, static electricity is generated during the rubbing of the liquid crystal alignment process performed in the manufacturing process, which is a problem.

The present invention answers such problems, and in a semiconductor device typified by an active matrix liquid crystal display device, the number of steps for manufacturing TFTs can be reduced to reduce the manufacturing cost and improve the yield. Is an issue.

Another object of the present invention is to provide a structure that can solve the problems of TFT breakdown and TFT characteristic deterioration due to static electricity, and a manufacturing method thereof.

In order to solve the above problems, in the present invention, first, a gate wiring is formed by the first photomask.

Next, a gate insulating film, a non-doped amorphous silicon film (hereinafter referred to as a-Si film),
An amorphous silicon film containing an impurity element imparting n-type conductivity (hereinafter referred to as an n ⁺ a-Si film) and a conductive film are successively formed.

Next, a gate insulating film, an active layer made of an a-Si film, a source wiring (including a source electrode), and a drain electrode are formed by patterning on the second photomask.

Thereafter, after forming a transparent conductive film, a pixel electrode made of a transparent conductive film is formed on the third photomask, and further, a source region and a drain region made of an n ⁺ a-Si film are formed, and at the same time, a-Si is formed. Part of the film is removed.

With such a configuration, the number of photomasks used in the photolithography technique can be three.

Further, the source wiring is covered with a transparent conductive film which is the same material as the pixel electrode so that the entire substrate is protected from external static electricity. Alternatively, a protective circuit may be formed using a transparent conductive film. With such a configuration, generation of static electricity due to friction between the manufacturing apparatus and the insulating substrate in the manufacturing process can be prevented. In particular, the TFT and the like can be protected from static electricity generated during rubbing of the liquid crystal alignment treatment performed in the manufacturing process.

The structure of the invention disclosed in this specification is a semiconductor device including a gate wiring, a source wiring, and a pixel electrode, and includes a gate wiring 102 formed over an insulating surface, and a gate wiring 102 formed over the gate wiring. An insulating film 110; an amorphous semiconductor film 122 formed on the insulating film;
A source region 123 and a drain region 124 formed on the amorphous semiconductor film; a source wiring 125 or an electrode 126 formed on the source region or the drain region;
And one end surface of the drain region 124 or the source region 123 includes an end surface of the insulating film 110, an end surface of the amorphous semiconductor film 122, and a pixel electrode 127 formed on the electrode. The semiconductor device is characterized in that it substantially coincides with the end face of the electrode 126.

According to another aspect of the invention, there is provided a semiconductor device having a gate wiring, a source wiring, and a pixel electrode, the gate wiring 102 formed on an insulating surface, and an insulating film formed on the gate wiring. 110, an amorphous semiconductor film 122 formed on the insulating film, a source region 123 and a drain region 124 formed on the amorphous semiconductor film, and formed on the source region or the drain region. The source wiring 125 or the electrode 126 and the pixel electrode 127 formed on the electrode, and one end surface of the drain region 124 or the source 123 region is an end surface of the insulating film 110 and the amorphous region. The end face of the semiconductor film 122 and the end face of the electrode 126 substantially coincide with each other, and the other end face is the end face of the pixel electrode 127 and the other end face of the electrode 126. Is a semiconductor device characterized by substantially matching

In each of the above structures, the source region and the drain region are formed of an amorphous semiconductor film containing an impurity element imparting n-type conductivity.

In each of the above structures, the insulating film, the amorphous semiconductor film, the source region, and the drain region are formed continuously without being exposed to the atmosphere.

In each of the above structures, the insulating film, the amorphous semiconductor film, the source region, or the drain region is formed by a sputtering method.

In each of the above structures, as shown in FIG. 2D, the source region 123 and the drain region 124 are formed using the same mask as the amorphous semiconductor film 122 and the electrode 126. It is a feature. The source region and the drain region are
The source wiring 125 is formed by the same mask.

In each of the above structures, as shown in FIG. 2D, the source region 123 and the drain region 124 are formed using the same mask as the source wiring 125 and the pixel electrode 127. Yes.

In each of the above structures, the thickness of the amorphous semiconductor film in the region in contact with the source region and the drain region in the etching process of FIG. The structure is thicker than the film thickness in the region between the region and the region in contact with the region, that is, the channel etch type bottom gate structure.

Further, the configuration of the invention for realizing the above structure is that the gate wiring 10 is formed using the first mask.
2, a second step of forming an insulating film 104 covering the gate wiring,
A third step of forming a first amorphous semiconductor film 105 on the insulating film; and a second amorphous semiconductor film containing an impurity element imparting n-type on the first amorphous semiconductor film A fourth step of forming 106, a fifth step of forming a first conductive film 107 on the second amorphous semiconductor film, and the insulating film 104, the first film using a second mask A sixth step of selectively removing the amorphous semiconductor film 105, the second amorphous semiconductor film 106, and the first conductive film 107 to form a wiring 116 (source wiring and electrode); A seventh step of forming a second conductive film 118 in contact with and overlapping with 116 (a source wiring and an electrode); a part of the first amorphous semiconductor film 112 using a third mask; Crystalline semiconductor film 114, first conductive film 11
6 and the second conductive film 118 are selectively removed to form a source region 123 and a drain region 124 made of the second amorphous semiconductor film, and a pixel electrode 12 made of the second conductive film.
And an eighth step of forming the semiconductor device 7.

Moreover, in the said structure, it forms continuously from the said 2nd process to the said 5th process, without being exposed to air | atmosphere.

Moreover, in each said structure, it forms continuously in the same chamber from the said 2nd process to the said 5th process, It is characterized by the above-mentioned.

In each of the above structures, the insulating film may be formed by sputtering or plasma CVD.

In each of the above structures, the first amorphous semiconductor film may be formed by a sputtering method or a plasma CVD method.

In each of the above structures, the second amorphous semiconductor film may be formed by a sputtering method or a plasma CVD method.

In each of the above structures, the second conductive film is a transparent conductive film or a reflective conductive film.

According to the present invention, a liquid crystal display device including a pixel TFT portion having an inverted staggered n-channel TFT and a storage capacitor can be realized by using three photomasks by three photolithography processes. it can.

In the case where a protective film is formed, a pixel TFT portion having an inverted staggered n-channel TFT protected by an inorganic insulating film using four photomasks by four photolithography processes; In addition, a liquid crystal display device having a storage capacitor can be realized.

The figure which shows the top view of this invention. Sectional drawing which shows the manufacturing process of AM-LCD. Sectional drawing which shows the manufacturing process of AM-LCD. FIG. 11 is a top view illustrating a manufacturing process of an AM-LCD. FIG. 11 is a top view illustrating a manufacturing process of an AM-LCD. FIG. 6 is a top view illustrating the arrangement of a pixel portion and an input terminal portion of a liquid crystal display device. Sectional drawing which shows the mounting structure of a liquid crystal display device. Sectional drawing which shows the manufacturing process of AM-LCD. The top view and sectional drawing of an input terminal part. The top view of a manufacturing apparatus. The top view of a manufacturing apparatus. The figure which shows mounting of a liquid crystal display device. Sectional drawing which shows the mounting structure of a liquid crystal display device. The structure sectional view of an active matrix substrate. FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device.

  Embodiments of the present invention will be described below.

FIG. 1 is an example of a plan view of an active matrix substrate according to the present invention. Here, for the sake of simplicity, one pixel configuration of a plurality of pixels arranged in a matrix is shown. Also,
2 and 3 are diagrams showing a manufacturing process.

As shown in FIG. 1, the active matrix substrate has a plurality of gate wirings arranged in parallel to each other and a plurality of source wirings orthogonal to each gate wiring.

Further, a pixel electrode 12 made of a transparent conductive film is formed in a region surrounded by the gate wiring and the source wiring.
7 is arranged. In addition, the transparent conductive film 128 is provided so as not to overlap with the pixel electrode 127.
Overlaps the source wiring.

Further, between two adjacent gate lines below the pixel electrode 127, the gate line 10
The capacitor wiring 103 is arranged in parallel with the line 2. The capacitor wiring 103 is provided in all pixels, and forms a storage capacitor using the insulating film 111 shown in FIG. 2B as a dielectric.

In addition, a TFT as a switching element is provided in the vicinity of the intersection of the gate wiring 102 and the source wiring 125. This TFT is an inverted stagger type (or bottom gate type) TFT having a channel formation region formed of a semiconductor film having an amorphous structure (hereinafter referred to as an amorphous semiconductor film).

In addition, the TFT has a source region and a drain made of a gate electrode (integrated with the gate wiring 102), a gate insulating film, an a-Si film, and an n ⁺ a-Si film sequentially on an insulating substrate. A region, a source electrode (integrated with the source wiring 125), and an electrode 126 (hereinafter also referred to as a drain electrode) are stacked.

In the region of the gate wiring that does not overlap the a-Si film, no gate insulating film is present on the gate wiring.

Accordingly, the pixel electrode 127 overlapping with the electrode 126 is formed so as not to overlap with the gate wiring.

In addition, the transparent conductive film at the end of the source wiring is removed so as not to cause a short circuit at the intersection of the gate wiring and the source wiring. Further, the end portion of the electrode 117 is removed so that the capacitor wiring and the pixel electrode are not short-circuited.

A gate insulating film, an a-Si film, and an n ⁺ a-Si film are sequentially stacked on the insulating substrate below the source wiring (including the source electrode) and the drain electrode 126.

Further, in the a-Si film, a region between a region in contact with the source region and a region in contact with the drain region is thinner than the other regions. The film thickness decreased because of n ⁺ a-Si
This is because part of the a-Si film was removed when the source region and the drain region were formed by separating the film by etching. Further, by this etching, the end face of the pixel electrode, the end face of the drain electrode, and the end face of the drain region are matched.

Similarly, the end face of the transparent conductive film covering the source electrode, the end face of the source region, and the end face of the source wiring coincide.

The present invention having the above-described configuration will be described in more detail with the following examples.

Embodiments of the present invention will be described with reference to FIGS. 1 to 6 and FIG. This embodiment shows a method for manufacturing a liquid crystal display device, and a method for forming a TFT of a pixel portion on a substrate in an inverted staggered type and manufacturing a storage capacitor connected to the TFT will be described in detail according to steps.
In addition, the same drawing shows a process of manufacturing an input terminal portion provided at an end portion of the substrate and electrically connected to wiring of a circuit provided on another substrate.

In FIG. 2A, a glass substrate such as barium borosilicate glass or alumino borosilicate glass typified by Corning # 7059 glass or # 1737 glass can be used for the light-transmitting substrate 100. In addition, a light-transmitting substrate such as a quartz substrate or a plastic substrate can be used.

Next, after a conductive layer is formed over the entire surface of the substrate, a first photolithography step is performed, a resist mask is formed, unnecessary portions are removed by etching, and wirings and electrodes (a gate wiring 102 including a gate electrode, a capacitor wiring) 103 and terminal 101). At this time, etching is performed so that a tapered portion is formed at least at the end portion of the gate electrode 102. A top view at this stage is shown in FIG.

The gate wiring 102 including the gate electrode, the capacitor wiring 103, and the terminal 101 of the terminal portion are preferably formed of a low-resistance conductive material such as aluminum (Al). However, Al alone is inferior in heat resistance and easily corroded. Therefore, it is formed in combination with a heat-resistant conductive material. Examples of heat-resistant conductive materials include titanium (Ti), tantalum (Ta), tungsten (
W), molybdenum (Mo), chromium (Cr)
, Nd (neodymium), an alloy containing the element as a component, an alloy film combining the elements, or a nitride containing the element as a component.
Further, it is preferable to form in combination with a heat-resistant conductive material such as Ti, Si, Cr, or Nd because the flatness is improved. Moreover, you may form only such a heat resistant conductive material, for example, combining Mo and W.

In order to realize a liquid crystal display device, it is desirable to form the gate electrode and the gate wiring by combining a heat-resistant conductive material and a low-resistance conductive material. A suitable combination at this time will be described.

If the screen size is up to about 5 inches, a two-layer structure in which a conductive layer (A) made of a nitride of a heat-resistant conductive material and a conductive layer (B) made of a heat-resistant conductive material are laminated. The conductive layer (B) is Al,
The conductive layer (A) may be formed of an element selected from Ta, Ti, W, Nd, and Cr, an alloy containing the element as a component, or an alloy film combining the elements.
A film, a tungsten nitride (WN) film, a titanium nitride (TiN) film, or the like is used. For example, a two-layer structure in which Cr as the conductive layer (A) and Al containing Nd as the conductive layer (B) are stacked is preferable. The conductive layer (A) is 10 to 100 nm (preferably 20 to 50 nm), and the conductive layer (B)
Is 200 to 400 nm (preferably 250 to 350 nm).

On the other hand, for application to a large screen, a conductive layer (A) made of a heat resistant conductive material, a conductive layer (B) made of a low resistance conductive material, and a conductive layer (C) made of a heat resistant conductive material are laminated. It is preferable to have a three-layer structure. The conductive layer (B) made of a low resistance conductive material is made of aluminum (Al
) In addition to pure Al, 0.01-5 atomic% scandium (S
c) Al containing Ti, Nd, silicon (Si) or the like is used. The conductive layer (C) has an effect of preventing hillocks from being generated in Al of the conductive layer (B). The conductive layer (A) is 10 to 100
nm (preferably 20 to 50 nm), the conductive layer (B) is 200 to 400 nm (preferably 250 to 350 nm), and the conductive layer (C) is 10 to 100 nm (preferably 20 to 50 nm).
nm). In this embodiment, the conductive layer (A) is formed with a Ti film to a thickness of 50 nm by sputtering using Ti as a target, and the conductive layer (B) is formed by sputtering using Al as a target.
) Was formed with an Al film to a thickness of 200 nm, and a conductive layer (C) was formed with a Ti film to a thickness of 50 nm by sputtering using Ti as a target.

Next, an insulating film 104 is formed over the entire surface. The insulating film 104 is formed by sputtering and has a film thickness of 5
0 to 200 nm.

For example, a silicon nitride film is used as the insulating film 104 and is formed with a thickness of 150 nm. Of course, the gate insulating film is not limited to such a silicon nitride film, and other insulating films such as a silicon oxide film, a silicon oxynitride film, and a tantalum oxide film are used, and a single layer or a stacked layer made of these materials is used. It may be formed as a structure. For example, a stacked structure in which the lower layer is a silicon nitride film and the upper layer is a silicon oxide film may be used.

Next, 50 to 200 nm (preferably 100 to 150 nm) is formed over the insulating film 104.
The amorphous semiconductor film 105 is formed on the entire surface by a known method such as plasma CVD or sputtering (not shown). Typically, an amorphous silicon (a-Si) film is formed to a thickness of 100 nm by a sputtering method using a silicon target.
In addition, a compound semiconductor film having an amorphous structure such as a microcrystalline semiconductor film or an amorphous silicon germanium film can be applied to the amorphous semiconductor film.

Next, an amorphous semiconductor film 106 containing an impurity element imparting n-type conductivity is formed to a thickness of 20 to 80 nm as the semiconductor film 106 containing one conductivity type impurity element.
The amorphous semiconductor film 106 containing an impurity element imparting n-type is formed over the entire surface by a known method such as a plasma CVD method or a sputtering method. Typically, an n ⁺ a-Si: H film may be formed. For this purpose, a film is formed using a silicon target to which phosphorus (P) is added. Alternatively, the film may be formed by sputtering in an atmosphere containing phosphorus using a silicon target. Alternatively, the amorphous semiconductor film 106 containing an impurity element imparting n-type conductivity may be formed using a hydrogenated microcrystalline silicon film (μc-Si: H).

Next, a conductive metal film 107 is formed by sputtering or vacuum evaporation. Conductive metal film 1
The material of 07 is not particularly limited as long as it is a metal material that can be in ohmic contact with the n ⁺ a-Si film 106, and is an element selected from Al, Cr, Ta, Ti, or an alloy containing the element as a component? And alloy films in which the above elements are combined. However, it is necessary to select the conductive metal film 107 having a sufficient selection ratio with the terminal and the gate wiring in a later etching process. In this embodiment, sputtering is used, and the metal film 107 is 300 to 600 nm.
A Cr film was formed with a thickness of (FIG. 2A).

Insulating film 104, amorphous semiconductor film 105, and semiconductor film 10 containing an impurity element of one conductivity type
6 and the conductive metal film 107 are both produced by a known method, and plasma C
It can be produced by a VD method or a sputtering method. In this embodiment, the sputtering method is used and the target and the sputtering gas are appropriately switched to form continuously. At this time, in the sputtering apparatus, it is preferable to use the same reaction chamber or a plurality of reaction chambers and to continuously laminate these films without exposing them to the atmosphere. In this way, mixing of impurities can be prevented by not exposing to the atmosphere.

Next, a second photolithography step is performed to form resist masks 108 and 109, and unnecessary portions are removed by etching to form insulating films 110 and 111, wirings, and electrodes (source wirings). As an etching method at this time, wet etching or dry etching is used. Through the second photolithography process, the insulating film 104, the amorphous semiconductor film 105, the semiconductor film 106 containing an impurity element of one conductivity type, and the conductive metal film 10
7 is etched, and in the pixel TFT portion, an insulating film 110, an amorphous semiconductor film 112,
A semiconductor film 114 containing an impurity element of one conductivity type and a conductive metal film 116 are formed. Therefore, the end faces of these films are approximately the same. In the capacitor portion, the insulating film 111,
An amorphous semiconductor film 113, a semiconductor film 115 containing an impurity element of one conductivity type, and a conductive metal film 117 are formed. Similarly, the end faces of these films coincide.

Further, in the second photolithography process, the terminal portion is etched leaving only the terminal 101. Further, the insulating film on the gate wiring is removed leaving only the intersection with other wiring. For this reason, it is necessary to select a material having a sufficient selection ratio for the material of the terminal 101 and the gate wiring and an insulating film, and it is also necessary to select a material for the terminal and the conductive metal film having a sufficient selection ratio. is there. That is, it is necessary to select a material different from the material of the terminal and gate wiring and the conductive metal film. In this embodiment, the metal film 107 is etched by dry etching using a mixed gas of Cl ₂ and O ₂ , and the reaction gas is changed to a mixed gas of CF ₄ and O ₂ and contains a one-conductivity type impurity element. The film 106, the amorphous semiconductor film 105, and the insulating film 104 were selectively removed (FIG. 2B).

Next, after removing the resist mask 108, a transparent conductive film 118 is formed on the entire surface (FIG. 2).
(C)). A top view at this time is shown in FIG. However, for the sake of simplicity, the transparent conductive film 118 formed on the entire surface is not shown in FIG.

The material of the transparent conductive film 118 is formed of indium oxide (In ₂ O ₃ ) or indium tin oxide alloy (abbreviated as In ₂ O ₃ —SnO ₂ , ITO) or the like by sputtering or vacuum evaporation. To do. Etching treatment of such a material is performed with a hydrochloric acid based solution. But,
In particular, since etching of ITO tends to generate a residue, an indium oxide-zinc oxide alloy (In ₂ O ₃ —ZnO) may be used to improve etching processability. Since the indium oxide-zinc oxide alloy has excellent surface smoothness and excellent thermal stability as compared with ITO, even if the contact electrode 116 is formed of an Al film, a corrosion reaction can be prevented. Similarly, zinc oxide (
(ZnO) is also a suitable material, and gallium (
Zinc oxide (ZnO: Ga) to which Ga) is added can be used.

Next, a third photolithography process is performed to form resist masks 119, 120, 12.
1 is removed and unnecessary portions are removed by etching to remove the amorphous semiconductor film 122, the source region 123 and the drain region 124, the source electrode 125 and the drain electrode 126, and the pixel electrode 1
27 is formed (FIG. 2D).

In the third photolithography process, the transparent conductive film 118 is patterned, and at the same time, the conductive metal film 116, the n ⁺ a-Si film 114, and the amorphous semiconductor film 112 are partially removed by etching. Form holes. In this embodiment, first, the pixel electrode made of ITO is selectively removed by wet etching using a mixed solution of nitric acid and hydrochloric acid or a ferric chloride solution, and the metal film 116 having conductivity by wet etching. Then, the n ⁺ a-Si film 114 and a part of the amorphous semiconductor film 112 were etched by dry etching. In this embodiment, wet etching and dry etching are used. However, the practitioner may appropriately select the reaction gas and perform only dry etching, or the practitioner may appropriately select the reaction solution and perform wet etching. You may do it alone.

Further, the bottom of the opening reaches the amorphous semiconductor film, and the amorphous semiconductor film 114 having a recess.
Is formed. By this opening, the conductive metal film 116 is separated into the source electrode 125 and the drain electrode 126, and the n ⁺ a-Si film 114 is divided into the source region 123 and the drain region 1.
24. The transparent conductive film 128 that is in contact with the source electrode 125 covers the source wiring and serves to prevent static electricity generated in a later manufacturing process, particularly a rubbing process. In this embodiment, the transparent conductive film 128 is formed on the source wiring, but the transparent conductive film 128 may be removed when the ITO film is etched. Further, a circuit for protecting against static electricity may be formed by using the ITO film when the ITO film is etched.

Although not shown, in order to selectively remove the transparent conductive film formed on the gate wiring by the third photolithography process, the gate wiring is formed of an amorphous semiconductor film or a metal film 11.
6 and a selection ratio are required. However, the transparent conductive film is partially left in the gate wiring terminal portion.

Next, the resist masks 119 to 121 were removed. A cross-sectional view of this state is shown in FIG. FIG. 1 is a top view of one pixel, and cross-sectional views along line AA ′ and line BB ′ correspond to FIG. 3A, respectively.

FIG. 9A shows the gate wiring terminal portion 501 and the source wiring terminal portion 50 in this state.
The top view of 2 is shown, respectively. In addition, the same code | symbol is used for the location corresponding to FIGS. 1-3. FIG. 9B corresponds to a cross-sectional view taken along line EE ′ and FF ′ in FIG. In FIG. 9A, reference numeral 503 made of a transparent conductive film denotes a connection electrode that functions as an input terminal. In FIG. 9B, reference numeral 504 denotes an insulating film (extending from 110), 505 denotes an amorphous semiconductor film (extending from 122), and 506 denotes an n ⁺ a-Si film (123).
Extending from).

In the capacitor portion, the capacitor wiring 103 and the metal film 11 are formed using the insulating film 111 as a dielectric.
7 (or n ⁺ a-Si film 115 or semiconductor film) forms a storage capacitor.

In this manner, the pixel TFT portion having the inverted staggered n-channel TFT 201 and the storage capacitor 202 can be completed using three photomasks by three photolithography processes. Then, by arranging these in a matrix corresponding to each pixel to form a pixel portion, one substrate for manufacturing an active matrix liquid crystal display device can be obtained. In this specification, such a substrate is referred to as an active matrix substrate for convenience.

Next, the alignment film 130 is selectively formed only on the pixel portion of the active matrix substrate. As a method of selectively forming the alignment film 130, a screen printing method may be used, or a method of forming and removing a resist mask using a shadow mask after applying the alignment film may be used. Usually, a polyimide resin is often used for the alignment film of the liquid crystal display element.

Next, the alignment film 130 is subjected to a rubbing process so that liquid crystal molecules are aligned with a certain pretilt angle.

Next, after the active matrix substrate and the counter substrate 133 provided with the counter electrode 132 and the alignment film 131 are bonded to each other with a sealant while maintaining the substrate interval with a spacer,
A liquid crystal material 134 is injected between the active matrix substrate and the counter substrate. Liquid crystal material 134
A known one may be applied, and a TN liquid crystal is typically used. After injecting the liquid crystal material, the injection port is sealed with a resin material.

Next, the flexible printed circuit board (Flexible Printed Circuit) is connected to the terminal 101 of the terminal section.
: FPC). FPC is made of an organic resin film 138 such as polyimide and copper wiring 13
7 is connected to an input terminal 129 (corresponding to 503 in FIG. 9) made of a transparent conductive film with an anisotropic conductive adhesive. The anisotropic conductive adhesive includes an adhesive 135 and particles 136 having a conductive surface with a diameter of several tens to several hundreds μm mixed therein and plated with gold or the like. The particles 136 are input terminals 129. By making contact with the copper wiring 137, electrical contact is formed at this portion. Further, in order to increase the mechanical strength of this portion, the resin layer 13
9 is provided (FIG. 3B).

FIG. 6 is a diagram for explaining the arrangement of the pixel portion and the terminal portion of the active matrix substrate. Board 2
10 is provided with a pixel portion 211, and a gate wiring 208 and a source wiring 207 are formed so as to intersect with each other, and an n-channel TFT 201 connected thereto is provided corresponding to each pixel. On the drain side of the n-channel TFT 201, a pixel electrode 127 and a storage capacitor 20
2 is connected, and the other terminal of the storage capacitor 202 is connected to the capacitor wiring 209. The structure of the n-channel TFT 201 and the storage capacitor 202 is the n-channel TFT 20 shown in FIG.
1 and the storage capacitor 202 are the same.

An input terminal portion 205 for inputting a scanning signal is formed at one end of the substrate, and the connection wiring 2
06 is connected to the gate wiring 208. Further, an input terminal portion 203 for inputting an image signal is formed at the other end portion, and is connected to the source wiring 207 by the connection wiring 204. A plurality of gate wirings 208, source wirings 207, and capacitor wirings 209 are provided in accordance with the pixel density, and the number thereof is as described above. Further, an input terminal portion 212 for inputting an image signal and a connection wiring 213 may be provided, and the input terminal portion 203 may be alternately connected to the source wiring. An arbitrary number of input terminal portions 203, 205, and 212 may be provided, and the practitioner may determine as appropriate.

FIG. 7 shows an example of a mounting method of the liquid crystal display device. In the liquid crystal display device, an input terminal portion 302 is formed at an end portion of a substrate 301 on which a TFT is manufactured, and this is formed by a terminal 303 formed of the same material as a gate wiring as shown in the first embodiment. . Then, the counter substrate 304 and the spacer 306 are attached to each other with a sealant 305, and polarizing plates 307 and 308 are further provided. Then, the spacer 322 is fixed to the housing 321.

Note that the TFT in which the active layer is formed of the amorphous silicon film obtained in Example 1 has a small field-effect mobility and can be obtained only about 1 cm ² / Vsec. For this purpose, a drive circuit for displaying an image is formed of an LSI chip, and is a TAB (tape automated bonding) method or COG.
(Chip on glass) method. In this embodiment, an example in which a drive circuit is formed on an LSI chip 313 and mounted by the TAB method is shown. This includes flexible printed wiring boards (Fl
exible Printed Circuit (FPC)
The FPC has a copper wiring 310 formed on an organic resin film 309 such as polyimide, and is connected to the input terminal 302 with an anisotropic conductive adhesive. The input terminal is a transparent conductive film provided in contact with the wiring 303. The anisotropic conductive adhesive is composed of an adhesive 311 and particles 312 having a conductive surface with a diameter of several tens to several hundreds μm mixed therein and plated with gold or the like. By making contact with the copper wiring 310, electrical contact is formed at this portion.
A resin layer 318 is provided to increase the mechanical strength of this portion.

The LSI chip 313 is connected to the copper wiring 310 with bumps 314 and sealed with a resin material 315. The copper wiring 310 is connected at a connection terminal 316 to a printed circuit board 317 on which other signal processing circuits, amplifier circuits, power supply circuits, and the like are formed. In the transmissive liquid crystal display device, a light source 319 and a light guide 320 are provided on the counter substrate 304 and used as a backlight.

In this embodiment, an example in which a protective film is formed is shown in FIG. Note that this example is similar to FIG.
Since it is the same up to the state (D), different points will be described below. In addition, the same reference numerals are used for the portions corresponding to FIG.

First, after obtaining the state of FIG. 2D according to Example 1, a thin inorganic insulating film is formed on the entire surface. As the thin inorganic insulating film, an inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a tantalum oxide film may be used and formed as a single layer or a laminated structure made of these materials.

Next, a fourth photolithography step is performed, a resist mask is formed, unnecessary portions are removed by etching, and an insulating film 402 is formed in the pixel TFT portion and an inorganic insulating film 401 is formed in the terminal portion. The inorganic insulating films 401 and 402 function as a passivation film. In the terminal portion, the thin inorganic insulating film 401 is removed by a fourth photolithography process to expose the terminal 101 in the terminal portion.

Thus, in this embodiment, an inverted staggered n-channel TFT protected by an inorganic insulating film and a storage capacitor can be completed using four photomasks by four photolithography processes. These can be arranged in a matrix corresponding to each pixel, and a pixel portion can be formed to form one substrate for manufacturing an active matrix liquid crystal display device.

Note that this embodiment can be freely combined with the configuration of Embodiment 1 or Embodiment 2.

In Example 1, an example in which an insulating film, an amorphous semiconductor film, an amorphous semiconductor film containing an impurity element imparting n-type conductivity, and a metal film are stacked by a sputtering method is shown. In this example, Plasma C
An example using the VD method is shown.

In this embodiment, an insulating film, an amorphous semiconductor film, and an amorphous semiconductor film containing an impurity element imparting n-type are formed by a plasma CVD method.

In this embodiment, a silicon oxynitride film is used as the insulating film, and is formed by plasma CVD.
It is formed with a thickness of 0 nm. At this time, in the plasma CVD apparatus, the power supply frequency is 13 to 70.
It may be performed at MHz, preferably 27 to 60 MHz. By using a power supply frequency of 27 to 60 MHz, a dense insulating film can be formed, and a withstand voltage as a gate insulating film can be increased. A silicon oxynitride film manufactured by adding O ₂ to SiH ₄ and N ₂ O is
The fixed charge density in the film is reduced, making it a preferred material for this application. Of course, the gate insulating film is not limited to such a silicon oxynitride film, and other insulating films such as a silicon oxide film, a silicon nitride film, and a tantalum oxide film are used, and a single layer or a stacked layer made of these materials is used. It may be formed as a structure. Alternatively, a stacked structure in which the lower layer is a silicon nitride film and the upper layer is a silicon oxide film may be used.

For example, in the case where a silicon oxide film is used, tetraethyl orthosilicate (TEOS) and O ₂ are mixed by a plasma CVD method to a reaction pressure of 40 Pa, a substrate temperature of 250 to 350 ° C., and a high frequency (13.56 MHz). ) It can be formed by discharging at a power density of 0.5 to 0.8 W / cm ² . The silicon oxide film thus manufactured can obtain good characteristics as a gate insulating film by thermal annealing at 300 to 400 ° C. thereafter.

As the amorphous semiconductor film, a hydrogenated amorphous silicon (a-Si: H) film is typically formed to a thickness of 100 nm by a plasma CVD method. At this time, in the plasma CVD apparatus, the power supply frequency may be 13 to 70 MHz, preferably 27 to 60 MHz. By using a power supply frequency of 27 to 60 MHz, it becomes possible to improve the deposition rate, and the deposited film is preferable because it becomes an a-Si film with a low defect density. In addition, a compound semiconductor film having an amorphous structure such as a microcrystalline semiconductor film or an amorphous silicon germanium film can be applied to the amorphous semiconductor film.

Further, in the formation of the insulating film and the amorphous semiconductor film by a plasma CVD method, 1
It is preferable to perform pulse modulation discharge at 00 to 100 kHz because it is possible to prevent generation of particles due to a gas phase reaction of the plasma CVD method and to prevent generation of pinholes in film formation.

In this embodiment, an amorphous semiconductor film containing an impurity element imparting n-type is formed to a thickness of 20 to 80 nm as a semiconductor film containing an impurity element of one conductivity type. For example, an n-type a-Si: H film may be formed, and for that purpose, 0.1 to 5% with respect to silane (SiH ₄ ).
Add phosphine (PH ₃ ) at a concentration of Alternatively, the amorphous semiconductor film 106 containing an impurity element imparting n-type conductivity may be formed using a hydrogenated microcrystalline silicon film (μc-Si: H).

These films can be continuously formed by appropriately switching the reaction gas. In the plasma CVD apparatus, the same reaction chamber or a plurality of reaction chambers can be used, and these films can be continuously stacked without being exposed to the atmosphere.
In this manner, impurities can be prevented from being mixed into the amorphous semiconductor film by continuously forming the film without being exposed to the atmosphere.

  This embodiment can be combined with the second embodiment.

In Example 1 or Example 4, an example in which an insulating film, an amorphous semiconductor film, an n ⁺ a-Si film, and a metal film are sequentially stacked is shown. FIG. 10 shows an example of an apparatus provided with a plurality of chambers used in the case where films are continuously formed as described above.

FIG. 10 shows an outline of the apparatus (continuous film forming system) shown in this embodiment as viewed from the upper surface. FIG.
10 to 15 are airtight chambers. Each chamber is provided with a vacuum exhaust pump and an inert gas introduction system.

The chambers 10 and 15 are load lock chambers for loading the sample (processing substrate) 30 into the system. Reference numeral 11 denotes a first chamber for forming the insulating film 104. Reference numeral 12 denotes a second chamber for forming the amorphous semiconductor film 105. Reference numeral 13 denotes a third chamber for forming an amorphous semiconductor film 106 imparting n-type conductivity. Reference numeral 14 denotes a fourth chamber for forming the metal film 107. Reference numeral 20 denotes a common chamber for samples arranged in common for each chamber.

  An example of the operation is shown below.

Initially, all chambers are once evacuated to a high vacuum and then further inert gas,
Here, a state of purging with nitrogen (normal pressure) is assumed. In addition, all the gate valves 22 to
27 is closed.

First, the processing substrate is carried into the load lock chamber 10 together with the cassette 28 in which a large number of substrates are stored. After loading the cassette, the door of the load lock chamber (not shown) is closed. In this state,
The gate valve 22 is opened and one processing substrate 30 is taken out from the cassette and taken out into the common chamber 20 by the robot arm 21. At this time, alignment is performed in the common room. In addition, this board | substrate 30 used what formed wiring 101,102,103 obtained according to Example 1. FIG.

Here, the gate valve 22 is closed, and then the gate valve 23 is opened. Then, the processing substrate 30 is transferred to the first chamber 11. In the first chamber, film formation is performed at a temperature of 150 ° C. to 300 ° C. to obtain the insulating film 104. Note that as the insulating film, a silicon nitride film, a silicon oxide film, a silicon nitride oxide film, a stacked film of these, or the like can be used. In this embodiment, a single layer silicon nitride film is used, but a laminated structure of two layers or three or more layers may be used. Note that although a chamber capable of plasma CVD is used here, a chamber capable of sputtering using a target may be used.

After completion of the formation of the insulating film, the processing substrate is drawn out to the common chamber by the robot arm and transferred to the second chamber 12. 150 in the second chamber as in the first chamber.
A film formation process is performed at a temperature of from about 0 to 300 ° C., and an amorphous semiconductor film 105 is obtained by a plasma CVD method. Note that as the amorphous semiconductor film, a microcrystalline semiconductor film, an amorphous germanium film, an amorphous silicon germanium film, a stacked film of these, or the like can be used. Further, the heat treatment for reducing the hydrogen concentration may be omitted by setting the formation temperature of the amorphous semiconductor film to 350 ° C. to 500 ° C. Note that although a chamber capable of plasma CVD is used here, a chamber capable of sputtering using a target may be used.

After completion of the formation of the amorphous semiconductor film, the processing substrate is drawn out to the common chamber, and the third chamber 13
It is transferred to. In the third chamber, an impurity element (P or As) that imparts n-type by plasma CVD is performed at a temperature of 150 ° C. to 300 ° C. as in the second chamber.
Thus, an amorphous semiconductor film 106 containing is obtained. Note that although a chamber capable of plasma CVD is used here, a chamber capable of sputtering using a target may be used.

After the formation of the amorphous semiconductor film containing an impurity element imparting n-type conductivity, the treatment substrate is drawn out to the common chamber and transferred to the fourth chamber 14. In the fourth chamber, the metal film 107 is obtained by sputtering using a metal target.

The substrate to be processed on which the four layers are continuously formed in this way is transferred to the load lock chamber 15 by the robot arm and stored in the cassette 29.

Needless to say, the apparatus shown in FIG. 10 is merely an example. Further, this embodiment needs to be freely combined with any one of Embodiments 1 to 4.

In the fifth embodiment, an example in which a plurality of chambers are used for continuous lamination is shown. In this embodiment, the apparatus shown in FIG. 11 is used for continuous lamination while maintaining a high vacuum in one chamber. did.

In this example, the apparatus system shown in FIG. 11 was used. In FIG. 11, 40 is a processing substrate, 50 is a common chamber, 44 and 46 are load lock chambers, 45 is a chamber, and 42 and 43 are cassettes. In this embodiment, in order to prevent contamination that occurs when the substrate is conveyed, the layers are formed in the same chamber.

  This embodiment can be freely combined with any one of Embodiments 1 to 4.

However, when applying to Example 1, a plurality of targets are prepared in the chamber 45,
Sequentially, the insulating gas 104, the amorphous semiconductor film 105, the amorphous semiconductor film 106 containing an impurity element imparting n-type conductivity, and the metal film 107 may be stacked by changing the reaction gas.

However, in the case of applying to the third embodiment, the insulating gas 104, the amorphous semiconductor film 105, and the amorphous semiconductor film 106 containing an impurity element imparting n-type are stacked by sequentially changing the reaction gas. Good.

In Example 1, the example in which the n ⁺ a-Si film was formed by the sputtering method was shown, but in this example,
An example of forming by a plasma CVD method is shown. Note that this example is the same as Example 1 except for the method of forming the n ⁺ a-Si film, and only the differences will be described below.

If plasma CVD is used and phosphine (PH ₃ ) is added at a concentration of 0.1 to 5% with respect to silane (SiH ₄ ) as a reaction gas, an n ⁺ a-Si film can be obtained.

In Example 7, an example in which an n ⁺ a-Si film is formed by a plasma CVD method is shown; however, in this example, an example in which a microcrystalline semiconductor film containing an impurity element imparting n-type is used is shown.

The forming temperature is set to 80 to 300 ° C., preferably 140 to 200 ° C., and a gas mixture of silane gas (SiH ₄ : H ₂ = 1: 10 to 100) diluted with hydrogen and phosphine (PH ₃ ) is used as a reaction gas. A microcrystalline silicon film can be obtained by setting the pressure to 0.1 to 10 Torr and the discharge power to 10 to 300 mW / cm ² . Alternatively, phosphorus may be formed by plasma doping after the microcrystalline silicon film is formed.

FIG. 12 is a diagram schematically showing how the liquid crystal display device is assembled using the COG method. A pixel region 803, an external input / output terminal 804, and a connection wiring 805 are formed on the first substrate. A region surrounded by a dotted line is an IC chip bonding region 801 on the scanning line side and an IC chip bonding region 802 on the data line side. A counter electrode 809 is formed over the second substrate 808 and is bonded to the first substrate 800 with a sealant 810. Liquid crystal is sealed inside the sealant 810 to form a liquid crystal layer 811. The first substrate and the second substrate are bonded to each other with a predetermined interval. In the case of nematic liquid crystal, 3 to 8 μm, and in the case of smectic liquid crystal, 1 to 2 μm.
4 μm.

The IC chips 806 and 807 have different circuit configurations on the data line side and the scanning line side.
The IC chip is mounted on the first substrate. An external input / output terminal 804 is an FPC (Flexible Printed Circuit) for inputting power and control signals from the outside.
) 812 is pasted. In order to increase the adhesive strength of the FPC 812, a reinforcing plate 813 may be provided. Thus, a liquid crystal display device can be completed. If the IC chip is subjected to electrical inspection before being mounted on the first substrate, the yield in the final process of the liquid crystal display device can be improved and the reliability can be improved.

As a method for mounting the IC chip on the first substrate, a connection method using an anisotropic conductive material, a wire bonding method, or the like can be employed. An example is shown in FIG. FIG.
(A) shows an example in which the IC chip 908 is mounted on the first substrate 901 using an anisotropic conductive material. A pixel region 902, a lead line 906, a connection wiring, and an input / output terminal 907 are provided over the first substrate 901. The second substrate is bonded to the first substrate 901 with a sealant 904, and a liquid crystal layer 905 is provided therebetween.

Further, an FPC 912 is bonded to one end of the connection wiring and the input / output terminal 907 with an anisotropic conductive material. The anisotropic conductive material is a resin 915 and several tens to several hundreds of μ with Au or the like plated on the surface.
The conductive particles 914 are m-diameter conductive particles 914, and the connection wires and input / output terminals 90 are connected by the conductive particles 914.
7 and a wiring 913 formed in the FPC 912 are electrically connected. IC chip 90
8 is similarly bonded to the first substrate with an anisotropic conductive material, and the conductive particles 910 mixed in the resin 911 are used to connect the input / output terminals 909 and the lead wires 906 or connection wirings provided on the IC chip 908. The input / output terminal 907 is electrically connected.

Further, as shown in FIG. 13B, an IC chip is fixed to the first substrate with an adhesive 916,
The input / output terminal of the stick driver and the lead line or connection wiring may be connected by the Au wire 917. Then, the resin 918 is sealed.

The mounting method of the IC chip is not limited to the method based on FIG. 12 and FIG.
In addition to those described here, a known COG method, wire bonding method, or TAB method can be used.

  This embodiment can be combined with Embodiment 1.

In Embodiment 1, a method for manufacturing an active matrix substrate corresponding to a transmissive liquid crystal display device is shown, but in this embodiment, an example applied to a reflective liquid crystal display device is described with reference to FIGS.

First, similarly to Example 1, the steps shown in FIG. Then, an interlayer insulating film made of an organic resin film is formed. Next, an interlayer insulating film 601 is formed by performing unevenness processing of the interlayer insulating film. As this roughening treatment, a method of applying an organic resin film including fibers or spacers may be used, or a method of forming a part of the organic resin film by using a mask may be used. Alternatively, a method may be used in which the photosensitive resin is etched into a cylindrical shape using a mask, and then heated and reflowed.

Next, contact holes reaching the source wiring and the drain electrode are formed in the interlayer insulating film 601 by a third photolithography process. Further, in order to form a storage capacitor in the same process, a contact hole reaching the electrode is formed, and an interlayer insulating film on the terminal portion is removed.

  Next, a reflective conductive film (Al, Ag, or the like) is formed.

Then, a resist mask pattern is formed by a fourth photolithography process, and a pixel electrode 602 made of a conductive film having reflectivity is formed by etching. The pixel electrode 602 formed in this manner has a concavo-convex portion, and can scatter light and prevent mirroring. At the same time, a lead wiring 603 reaching the source electrode is formed.

Subsequent steps are the same as those in the first embodiment, and will be omitted. In this manner, an active matrix substrate corresponding to a reflective liquid crystal display device can be manufactured by using four photomasks through four photolithography processes.

  In addition, this embodiment can be combined with Embodiment 2 or Embodiment 3.

The CMOS circuit and the pixel portion formed by implementing the present invention can be used for various electro-optical devices (active matrix liquid crystal display, active matrix EC display). That is, the present invention can be implemented in all electronic devices in which these electro-optical devices are incorporated in the display unit.

Such electronic devices include video cameras, digital cameras, projectors (rear type or front type), head mounted displays (goggles type displays), car navigation systems, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones) Or an electronic book). Examples of these are shown in FIGS.
And shown in FIG.

FIG. 15A illustrates a personal computer, which includes a main body 2001, an image input unit 2002,
A display portion 2003, a keyboard 2004, and the like are included. The present invention includes an image input unit 2002 and a display unit 2.
It can be applied to 003 and other signal driving circuits.

FIG. 15B shows a video camera, which includes a main body 2101, a display portion 2102, and an audio input portion 21.
03, an operation switch 2104, a battery 2105, an image receiving unit 2106, and the like. The present invention can be applied to the display portion 2102 and other signal driving circuits.

FIG. 15C illustrates a mobile computer (mobile computer), which includes a main body 2201.
, A camera unit 2202, an image receiving unit 2203, an operation switch 2204, a display unit 2205, and the like. The present invention can be applied to the display portion 2205 and other signal driving circuits.

FIG. 15D shows a goggle type display including a main body 2301, a display portion 2302, an arm portion 2303, and the like. The present invention can be applied to the display portion 2302 and other signal driving circuits.

FIG. 15E shows a player using a recording medium (hereinafter referred to as a recording medium) on which a program is recorded. The main body 2401, a display portion 2402, a speaker portion 2403, and a recording medium 2404 are shown.
Operation switch 2405 and the like. This player uses a DVD (Di as a recording medium).
gial Versatile Disc), CD, etc. can be used for music appreciation, movie appreciation, games, and the Internet.
The present invention can be applied to the display portion 2402 and other signal driving circuits.

FIG. 15F illustrates a digital camera, which includes a main body 2501, a display portion 2502, and an eyepiece portion 250.
3, an operation switch 2504, an image receiving unit (not shown), and the like. Display unit 2502 of the present invention
And other signal driving circuits.

FIG. 16A shows a front type projector, which includes a projection device 2601 and a screen 26.
02 etc. are included. The present invention can be applied to the liquid crystal display device 2808 constituting a part of the projection device 2601 and other signal driving circuits.

FIG. 16B shows a rear projector, which includes a main body 2701, a projection device 2702, a mirror 2703, a screen 2704, and the like. The present invention can be applied to the liquid crystal display device 2808 constituting a part of the projection device 2702 and other signal driving circuits.

Note that FIG. 16C illustrates a projection device 2601 in FIGS. 16A and 16B.
2 is a diagram illustrating an example of a structure 2702. FIG. The projection devices 2601 and 2702 are the light source optical system 2
801, mirrors 2802, 2804 to 2806, dichroic mirror 2803, prism 2807, liquid crystal display device 2808, phase difference plate 2809, and projection optical system 2810. Projection optical system 2810 includes an optical system including a projection lens. Although the present embodiment shows a three-plate type example, it is not particularly limited, and for example, a single-plate type may be used. In addition, in the optical path indicated by the arrow in FIG.
You may provide optical systems, such as a film for adjusting a phase difference, and an IR film.

FIG. 16D is a diagram illustrating an example of the structure of the light source optical system 2801 in FIG. In this embodiment, the light source optical system 2801 includes a reflector 2811 and a light source 28.
12, lens arrays 2813 and 2814, a polarization conversion element 2815, and a condenser lens 2816. Note that the light source optical system illustrated in FIG. 16D is an example and is not particularly limited.
For example, the practitioner may appropriately provide an optical system such as an optical lens, a film having a polarization function, a film for adjusting a phase difference, or an IR film in the light source optical system.

However, the projector shown in FIG. 16 shows a case in which a transmissive electro-optical device is used, and an application example in a reflective electro-optical device is not shown.

FIG. 17A illustrates a mobile phone, which includes a main body 2901, an audio output unit 2902, and an audio input unit 29.
03, a display portion 2904, an operation switch 2905, an antenna 2906, and the like. The present invention can be applied to the audio output unit 2902, the audio input unit 2903, the display unit 2904, and other signal driving circuits.

FIG. 17B illustrates a portable book (electronic book), which includes a main body 3001 and display portions 3002 and 300.
3, a storage medium 3004, an operation switch 3005, an antenna 3006, and the like. The present invention can be applied to the display portions 3002 and 3003 and other signal circuits.

FIG. 17C illustrates a display, which includes a main body 3101, a support base 3102, and a display portion 3103.
Etc. The present invention can be applied to the display portion 3103. The display of the present invention is particularly advantageous when the screen is enlarged, and is advantageous for displays having a diagonal of 10 inches or more (particularly 30 inches or more).

As described above, the application range of the present invention is extremely wide and can be applied to electronic devices in various fields. Moreover, the electronic apparatus of a present Example is realizable even if it uses the structure which consists of what combination of Examples 1-10.

Claims (2)

And the conductive film having a region that functions as a Gate electrode,
A gate insulating film above the conductive film ;
An amorphous semiconductor film of the gate insulating film on side,
A semiconductor film containing an n-type impurity element of said amorphous semiconductor film over side,
And the metal film of the semiconductor film on side containing an impurity element of said n-type,
A transparent conductive film above the metal film;
Have
The metal film is
A first region functioning as a source electrode or a drain electrode of the picture element transistor,
A second region extending from the first region and functioning as a source wiring;
A third region extending from the second region and functioning as a source wiring terminal portion;
Have
The transparent conductive film is provided to cover the first to third regions and in contact with the first to third regions,
Before KiToru Akirashirubedenmaku via the anisotropic conductive material, it is electrically connected to the wiring circuit provided on the other substrate,
The amorphous semiconductor film is provided below the first to third regions;
The amorphous semiconductor film below the second region has a fourth region having a width larger than that of the second region,
The display device , wherein the conductive film has a region overlapping with the fourth region . A conductive film having a region functioning as a gate electrode;
A gate insulating film above the conductive film;
An amorphous semiconductor film above the gate insulating film;
A semiconductor film containing an n-type impurity element above the amorphous semiconductor film;
A metal film above the semiconductor film containing the n-type impurity element;
A transparent conductive film above the metal film;
Have
The metal film is
A first region that functions as a source electrode or a drain electrode of a pixel transistor;
Second to third regions extending from the first region and functioning as source wirings;
A fourth region that extends from the second to third regions and functions as a source wiring terminal portion;
Have
The transparent conductive film covers the first to fourth regions and is in contact with the first to fourth regions,
The transparent conductive film is electrically connected to circuit wiring provided on another substrate via an anisotropic conductive material,
The amorphous semiconductor film is provided below the first to fourth regions;
The amorphous semiconductor film below the second region has a fifth region having a width larger than that of the second region,
The transparent conductive film above the third region has a sixth region that is wider than the third region,
The display device, wherein the conductive film has a region overlapping with the fifth region.

Images