JP5416987B2 - Film forming method and light emitting device manufacturing method - Google Patents

Description

The present invention relates to a film formation method and a method for manufacturing a light-emitting device.

In a light-emitting device including an electroluminescence (hereinafter, also referred to as EL) element, a color light-emitting element that emits color light is used in order to perform full-color display. In order to form a color light emitting element, it is necessary to form a light emitting material of each color on the electrode in a fine pattern.

When a material is formed using a vapor deposition method or the like, a method of forming a fine pattern by providing a mask between a vapor deposition material and a deposition target substrate is generally used.

However, due to miniaturization of the pixel region accompanying high definition and an increase in the deposition target substrate accompanying an increase in area, defects due to accuracy and deflection of the mask used during vapor deposition have become problems. In order to solve this problem, research has been reported in which a spacer for supporting a mask is provided on a pixel electrode layer to prevent a film formation failure due to kinking or deflection of the mask (see, for example, Patent Document 1).

JP 2006-113568 A

An object of the present invention is to provide a film formation method for forming a thin film with a fine pattern on a deposition target substrate without providing a mask between the deposition material having the above problem and the deposition target substrate. To do. Another object is to form a light-emitting element using such a film formation method to manufacture a high-definition light-emitting device.

The present invention provides a material layer by irradiating a film-forming substrate having a reflective layer, a light absorption layer, and a material layer formed on a substrate with laser light, transmitting the substrate, and irradiating the light absorption layer with laser light. The material contained in the film is deposited on the deposition target substrate disposed to face each other. By selectively forming the reflective layer, the film formed on the deposition target substrate can be selectively formed with a fine pattern reflecting the pattern of the reflective layer. The material layer is formed using a wet method.

Note that in this specification, a substrate on which a thin film is formed with a fine pattern is referred to as a deposition substrate, and a substrate that provides a material for formation on the deposition substrate is referred to as a deposition substrate.

One embodiment of a film formation method of the present invention is a liquid composition in which a reflective layer having an opening is formed on a first substrate, a light absorption layer is formed on the reflection layer, and a film material is included on the light absorption layer. A film formation substrate is manufactured by forming a material layer by a wet method using an object, and the film formation substrate is disposed so that the material layer formation surface of the film formation substrate faces the film formation surface of the film formation substrate. And the film formation substrate are disposed, and the light absorption layer is irradiated with the laser light through the opening of the first substrate and the reflection layer, and is included in the material layer on the light absorption layer irradiated with the laser light. A material is deposited on a deposition target substrate.

One embodiment of a film formation method of the present invention is a liquid composition in which a reflective layer having an opening is formed on a first substrate, a light absorption layer is formed on the reflection layer, and a film material is included on the light absorption layer. A film formation substrate is manufactured by forming a material layer by a wet method using an object, and the film formation substrate is disposed so that the material layer formation surface of the film formation substrate faces the film formation surface of the film formation substrate. The deposition target substrate is disposed above, and the light absorption layer is irradiated with the laser light by passing through the opening of the first substrate and the reflection layer, and included in the material layer on the light absorption layer irradiated with the laser light. A material is deposited on a deposition target substrate.

In one embodiment of the film forming method of the present invention, a reflective layer having an opening is formed on a first substrate, a light-transmitting heat insulating layer is formed on the reflective layer, and a light absorbing layer is formed on the heat insulating layer Then, a material layer is formed by a wet method using a liquid composition containing a film material over the light absorption layer to produce a film formation substrate, and the material layer formation surface of the film formation substrate and the film formation substrate The film formation substrate and the film formation substrate are disposed so that the film formation surface faces each other, and the light absorption layer is irradiated with the laser light through the first substrate, the opening of the reflection layer, and the heat insulating layer. Then, the material included in the material layer on the light absorption layer irradiated with the laser light is formed over the deposition target substrate.

In the present invention, a thin film with a fine pattern can be formed on a deposition target substrate without providing a mask between the vapor deposition material and the deposition target substrate.

In one embodiment of the film forming method of the present invention, a reflective layer having an opening is formed on a first substrate, a light-transmitting heat insulating layer is formed on the reflective layer, and a light absorbing layer is formed on the heat insulating layer Then, a material layer is formed by a wet method using a liquid composition containing a film material over the light absorption layer to produce a film formation substrate, and the material layer formation surface of the film formation substrate and the film formation substrate Arrange the deposition substrate above the deposition substrate so that it faces the deposition surface, and pass the first substrate, the opening of the reflective layer, and the heat insulation layer to irradiate the light absorption layer with the laser light. Then, the material included in the material layer on the light absorption layer irradiated with the laser light is formed over the deposition target substrate.

In the present invention, as described above, a material layer is formed on a deposition substrate by a wet method, and light is irradiated from the lower side of the deposition substrate to form a material layer on a deposition substrate disposed above. The contained material can be deposited. Therefore, the film formation substrate can be arranged with the material layer side facing upward (also referred to as a so-called face-up arrangement) throughout the film formation process. Since it is not necessary to dispose the deposition substrate with the material layer side down (also referred to as a so-called face-down arrangement) during the process, contamination of the material layer with dust or the like during the process can be reduced. In this case, the downward direction is the direction of free fall.

Heat treatment may be performed on a material layer formed on the deposition substrate by a wet method. Since the solvent contained in the material layer can be removed or planarized by the heat treatment, the film quality of the material layer is improved.

The step of irradiating the light absorption layer with the laser light is preferably performed under reduced pressure. When a process of depositing a material on a deposition target substrate is performed by irradiating a laser under reduced pressure, the influence of contaminants such as dust on the deposited film can be reduced.

As the wet method, a coating method typified by a spin coating method, an inkjet method, or the like can be used. Since the wet method can be performed under atmospheric pressure, facilities for a vacuum apparatus or the like can be reduced. Further, since the processing substrate is not limited by the size of the vacuum chamber, it is possible to cope with an increase in the size of the substrate, and the processing area is expanded, so that the cost is reduced and the productivity is improved.

Laser light having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less can be used as the laser light. As described above, by using laser light having a very small pulse width, heat conversion in the light absorption layer is efficiently performed, and the material can be efficiently heated. Further, laser light having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less can be irradiated with laser light for a short time, so that heat diffusion can be suppressed and a fine pattern can be formed. In addition, a laser beam having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less can be processed at a time because a high output is possible. Further, by making the laser beam linear or rectangular on the irradiation surface, it is possible to efficiently scan the processing substrate with the laser beam. Therefore, the time required for film formation (takt time) is shortened and productivity is improved.

The heat insulating layer is preferably formed using a material having a transmittance of 60% or more for laser light and a thermal conductivity smaller than that of the material used for the reflective layer and the light absorbing layer. When the thermal conductivity is low, heat obtained from the irradiated laser light can be used efficiently for film formation.

The light-emitting element can be formed by forming the material layer using a liquid composition containing an organic compound and depositing the material layer over the first electrode formed over the deposition surface of the deposition substrate. it can. An EL layer can be formed over the deposition target substrate with a fine pattern, and can be formed separately for each emission color. A high-definition light-emitting device having such a light-emitting element can be manufactured.

When the present invention is used, a thin film can be formed over a large-area deposition target substrate; thus, a large light-emitting device and an electronic device can be manufactured.

A thin film with a fine pattern can be formed on the deposition target substrate without providing a mask between the vapor deposition material and the deposition target substrate. Further, a light-emitting element can be formed using such a film formation method, whereby a high-definition light-emitting device can be manufactured. In addition, since a thin film can be formed over a deposition substrate having a large area, a large light-emitting device and an electronic device can be manufactured.

It is sectional drawing which showed the film-forming method. It is sectional drawing which showed the film-forming method. It is sectional drawing of an example of the board | substrate for film-forming. It is sectional drawing of an example of the board | substrate for film-forming. It is the top view and sectional drawing which showed the light-emitting device. It is the top view and sectional drawing which showed the light-emitting device. It is a cross-sectional view illustrating a manufacturing process of a light-emitting device. It is the top view and sectional drawing which showed the light-emitting device. It is a cross-sectional view illustrating a manufacturing process of a light-emitting device. FIG. 11 is a plan view illustrating a manufacturing process of a light-emitting device. FIG. 11 is a plan view illustrating a manufacturing process of a light-emitting device. It is sectional drawing which showed the structure of the light emitting element. It is sectional drawing which showed the light emission display module. It is the top view and sectional drawing which showed the light emission display module. It is the figure which showed the electronic device. It is the figure which showed the electronic device. It is the figure which showed the electronic device.

Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

(Embodiment 1)
In this embodiment, an example of a deposition method for forming a thin film with a fine pattern over a deposition target substrate using the present invention will be described with reference to FIGS.

FIG. 1A illustrates an example of a deposition substrate. A reflective layer 102 is selectively formed over the first substrate 101, a heat insulating layer 103 is formed over the reflective layer 102, and a light absorbing layer 104 is formed over the heat insulating layer 103. The reflective layer 102 is formed with an opening 106. In FIG. 1A, the heat insulating layer 103 and the light absorption layer 104 are formed over the entire surface of the first substrate 101.

In the present invention, the light absorption layer 104 formed on the deposition substrate is irradiated with light from the first substrate 101 side to form a film. Therefore, for the light to be used, the first substrate 101 needs to have translucency, the reflective layer 102 has reflectivity, the heat insulating layer 103 has translucency, and the light absorption layer 104 has absorbency. Accordingly, since the types of materials suitable for the first substrate 101, the reflective layer 102, the heat insulating layer 103, and the light absorption layer 104 vary depending on the wavelength of the irradiated light, it is necessary to select materials as appropriate.

The first substrate 101 is preferably a material having low thermal conductivity. When the thermal conductivity is low, heat obtained from the irradiated light can be efficiently used for film formation. As the first substrate 101, for example, a glass substrate, a quartz substrate, a plastic substrate containing an inorganic material, or the like can be used. As the glass substrate, various glass substrates used for the electronic industry called non-alkali glass such as aluminosilicate glass, aluminoborosilicate glass, and barium borosilicate glass can be applied.

The reflective layer 102 is a layer for reflecting light irradiated to other portions in order to selectively irradiate light to a part of the light absorption layer 104 during film formation. Therefore, the reflective layer 102 is preferably formed of a material having a high reflectance with respect to the light to be irradiated. Specifically, the reflective layer 102 preferably has a reflectance of 85% or more, more preferably 90% or more, with respect to the irradiated light.

As a material that can be used for the reflective layer 102, for example, silver, gold, platinum, copper, an alloy containing aluminum, an alloy containing silver, indium oxide-tin oxide, or the like can be used.

The thickness of the reflective layer 102 varies depending on the material and light to be irradiated, but is preferably 100 nm or more. By setting it as a film thickness of 100 nm or more, it can suppress that the irradiated light permeate | transmits a reflective layer.

Various methods can be used to form the opening 106 in the reflective layer 102, but dry etching is preferably used. By using dry etching, the sidewall of the opening 106 becomes sharp and a fine pattern can be formed.

The heat insulating layer 103 absorbs light that is formed later when a part of light reflected by the reflective layer 102 becomes heat and remains in the reflective layer. This is a layer for preventing transmission to the layer 104 and the material layer 105. Therefore, the heat insulating layer 103 needs to use a material whose thermal conductivity is lower than the material forming the reflective layer 102 and the light absorption layer 104. In addition, as shown in FIG. 1, in the case of a configuration in which light transmitted through the opening 106 of the reflective layer 102 is transmitted through the heat insulating layer 103 and irradiated to the light absorbing layer, the heat insulating layer 103 has a light transmitting property. There is a need. In this case, the heat insulating layer 103 in the present invention needs to use a material having a low thermal conductivity and a high light transmittance. Specifically, it is preferable to use a material having a light transmittance of 60% or more for the heat insulating layer 103.

As a material used for the heat insulating layer 103, for example, titanium oxide, silicon oxide, silicon nitride oxide, zirconium oxide, silicon carbide, or the like can be used.

The thickness of the heat insulating layer 103 varies depending on the material, but is preferably 10 nm or more and 2 μm or less, and more preferably 100 nm or more and 600 nm or less. By setting the film thickness to 10 nm or more and 2 μm or less, heat existing in the reflective layer 102 is transmitted to the light absorption layer 104 and the material layer 105 while transmitting the light irradiated through the opening 106 of the reflective layer 102. Has the effect of blocking In FIG. 1, the heat insulating layer 103 is formed so as to cover the reflective layer 102 and the opening 106 of the reflective layer 102. However, the heat insulating layer 103 may be formed only at a position overlapping the reflective layer 102.

The light absorption layer 104 is a layer that absorbs light irradiated during film formation. Therefore, the light absorption layer 104 is preferably formed of a material having a low reflectance with respect to the light to be irradiated and a high absorption rate. Specifically, the light absorption layer 104 preferably exhibits a reflectance of 70% or less with respect to the irradiated light.

Various materials can be used for the light absorption layer 104. For example, a metal nitride such as titanium nitride, tantalum nitride, molybdenum nitride, or tungsten nitride, a metal such as titanium, molybdenum, or tungsten, or carbon can be used. Note that since the type of material suitable for the light absorption layer 104 varies depending on the wavelength of light to be irradiated, it is necessary to select a material as appropriate. Further, the light absorption layer 104 is not limited to a single layer, and may be composed of a plurality of layers. For example, a stacked structure of metal and metal nitride may be used.

The reflective layer 102, the heat insulating layer 103, and the light absorption layer 104 can be formed using various methods. For example, it can be formed by a sputtering method, an electron beam evaporation method, a vacuum evaporation method, a chemical vapor deposition (CVD) method, or the like.

Although the film thickness of the light absorption layer 104 changes with materials and the light to irradiate, it is preferable that it is the film thickness which the irradiated light does not permeate | transmit. Specifically, the film thickness is preferably 10 nm or more and 2 μm or less. In addition, since the light absorption layer having a smaller thickness can be formed with a laser beam having a smaller energy, the thickness is more preferably greater than or equal to 10 nm and less than or equal to 600 nm. For example, when light with a wavelength of 532 nm is irradiated, by setting the thickness of the light absorption layer 104 to be 50 nm or more and 200 nm or less, the irradiated light can be efficiently absorbed and generated. In addition, when the thickness of the light absorption layer 104 is greater than or equal to 50 nm and less than or equal to 200 nm, deposition onto the deposition target substrate can be performed with high accuracy.

The light absorption layer 104 is irradiated if it can be heated to a temperature at which a material included in the material layer 105 can be formed (a temperature at which at least a part of the material included in the material layer is formed on the deposition target substrate). Part of the light may be transmitted. However, in the case where part of the light is transmitted, a material that is not decomposed by light needs to be used as the material included in the material layer 105.

Furthermore, it is preferable that the reflectance between the reflective layer 102 and the light absorption layer 104 is larger. Specifically, the difference in reflectance with respect to the wavelength of light to be irradiated is preferably 25% or more, more preferably 30% or more.

A material layer 105 containing a material to be deposited over the deposition target substrate is formed over the light absorption layer 104 (see FIG. 1B). In the present invention, the material layer 105 is formed by a wet method. The wet method is a method of forming a thin film by dissolving a thin film forming material in a solvent, attaching the liquid composition to a formation region, removing the solvent, and solidifying. In this embodiment mode, the material layer 105 is formed by applying a liquid droplet composition 151 containing a material over the light absorption layer 104 and solidifying the light absorption layer 104.

Moreover, you may perform the process of apply | coating a composition under reduced pressure. The substrate may be heated at the time of application. The material layer 105 may be solidified by one or both of drying and baking after the application of the liquid composition. The drying and firing steps are both heat treatment steps, but their purpose, temperature and time are different. The drying process and the firing process are performed under normal pressure or reduced pressure by laser light irradiation, rapid thermal annealing, a heating furnace, or the like. Note that the timing of performing this heat treatment and the number of heat treatments are not particularly limited. Conditions such as temperature and time for performing the drying and firing steps favorably depend on the material of the substrate and the properties of the composition.

The material layer 105 is a layer formed including a material to be deposited on the deposition target substrate. Then, by irradiating the deposition substrate with light, the material included in the material layer 105 is heated, and at least a part of the material included in the material layer 105 is deposited on the deposition substrate. When the material layer 105 is heated, at least a part of the material included in the material layer is vaporized, or at least a part of the material layer is thermally deformed, and as a result, the stress is changed, so that the film is peeled off, A film is formed on the deposition target substrate.

Wet methods include spin coating method, roll coating method, spray method, casting method, dipping method, droplet ejection (jetting) method (inkjet method), dispenser method, various printing methods (screen (stencil) printing, offset (flat plate) ) Printing, letterpress printing, gravure (intaglio) printing, etc., a method of forming a desired pattern), and the like.

The wet method has higher utilization efficiency of the material than the dry method such as vapor deposition and sputtering because the material does not scatter in the chamber. Moreover, since it can carry out under atmospheric pressure, the installation concerning a vacuum device etc. can be reduced. Further, since the processing substrate is not limited by the size of the vacuum chamber, it is possible to cope with an increase in the size of the substrate, and the processing area is expanded, so that the cost is reduced and the productivity is improved. This is a so-called low-temperature process because it only requires a heat treatment at a temperature sufficient to remove the solvent in the composition. Therefore, a substrate or a material that is decomposed or deteriorated by high heat treatment can be used.

As a material included in the material layer 105, any material can be used regardless of an organic compound or an inorganic compound as long as the material can be formed by a wet method. In the case of forming an EL layer of a light-emitting element, a filmable material for forming the EL layer is used. For example, in addition to organic compounds such as luminescent materials and carrier transport materials that form EL layers, metal oxides used for electrodes of light emitting elements in addition to materials for carrier transport layers and carrier injection layers that constitute EL layers Inorganic compounds such as metal nitrides, metal halides, and simple metals can also be used.

Further, the material layer 105 may include a plurality of materials. The material layer 105 may be a single layer or a plurality of layers may be stacked.

When the material layer 105 is formed using a wet method as in the present invention, a desired material may be dissolved or dispersed in a solvent to prepare a liquid composition (solution or dispersion). The solvent is not particularly limited as long as it can dissolve or disperse the material and does not react with the material. For example, halogen solvents such as chloroform, tetrachloromethane, dichloromethane, 1,2-dichloroethane, or chlorobenzene, ketone solvents such as acetone, methyl ethyl ketone, diethyl ketone, n-propyl methyl ketone, or cyclohexanone, benzene, toluene, or Aromatic solvents such as xylene, ethyl acetate, n-propyl acetate, n-butyl acetate, ethyl propionate, γ-butyrolactone, ester solvents such as diethyl carbonate, ether solvents such as tetrahydrofuran or dioxane, dimethylformamide Alternatively, an amide solvent such as dimethylacetamide, dimethyl sulfoxide, hexane, water, or the like can be used. Moreover, you may mix and use these solvent multiple types.

In the case where the thickness and uniformity of a film formed over the deposition target substrate are controlled by the material layer 105, the thickness and uniformity of the material layer 105 need to be controlled. However, the material layer 105 is not necessarily a uniform layer as long as the thickness and uniformity of a film formed over the deposition target substrate are not affected. For example, it may be formed in a fine island shape, or may be formed in a layered structure.

Next, the first substrate 101 is a deposition target substrate at a position opposite to the surface on which the reflective layer 102, the heat insulating layer 103, the light absorption layer 104, and the material layer 105 are formed. The second substrate 107 is provided (see FIG. 1C). The second substrate 107 is a deposition target substrate on which a desired layer is deposited by a deposition process. The distance d between the first substrate 101 and the second substrate 107 is a close distance, specifically, the distance d between the surface of the first substrate 101 and the surface of the second substrate 107 is 0 mm or more and 2 mm or less, preferably 0 mm or more and 0. 0.05 mm or less, more preferably 0 mm or more and 0.03 mm or less. If the first substrate 101 and the second substrate 107 are particularly large substrates, an error may occur in the distance d between the substrates due to deflection or warpage of the substrate, and the value of the distance d may have a distribution. In this case, the distance d is the shortest distance between the first substrate 101 and the second substrate 107. Depending on the size and arrangement method of the substrate, the first substrate 101 and the second substrate 107 may be in contact with each other.

Light 110 is irradiated from the back surface (the surface on which the reflective layer 102, the heat insulating layer 103, the light absorption layer 104, and the material layer 105 are not formed) of the first substrate 101 (see FIG. 1D). At this time, the light 110 applied to the reflective layer 102 formed on the first substrate 101 is reflected, but the light 110 applied to the opening 106 of the reflective layer 102 passes through the heat insulating layer 103. Absorbed by the light absorption layer 104. Then, the light absorption layer 104 supplies heat obtained from the absorbed light to the material included in the material layer 105, whereby at least part of the material included in the material layer 105 is formed over the film 111 on the second substrate 107. As a film formation. Accordingly, a film 111 formed into a desired pattern is formed over the second substrate 107 (see FIG. 1E).

As the irradiation light 110, laser light can be used. Further, the wavelength of the laser beam is not particularly limited, and laser beams having various wavelengths can be used. For example, laser light having a wavelength such as 355, 515, 532, 1030, or 1064 nm can be used.

The laser light includes Ar laser, Kr laser, excimer laser and other gas laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic). YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta added as dopants are used as the medium. Lasers, glass lasers, ruby lasers, alexandrite lasers, Ti: sapphire lasers, fiber lasers and other solid lasers that are oscillated from one or more types can be used. Also, second harmonics, third harmonics, and higher harmonics oscillated from the solid-state laser can be used. Note that the use of a solid-state laser whose laser medium is solid has the advantage that a maintenance-free state can be maintained for a long time and the output is relatively stable.

The shape of the laser spot is preferably linear or rectangular. By making the shape linear or rectangular, the processing substrate can be efficiently scanned with laser light. Therefore, the time required for film formation (takt time) is shortened and productivity is improved. The shape of the laser spot may be elliptical.

In addition, the present invention is characterized in that the light absorption layer 104 that absorbs light from the light source gives heat to the material layer 105 instead of using radiant heat by light from the irradiated light source. Accordingly, the range of the material layer 105 to be heated does not widen by transferring heat in the surface direction from the light absorbing layer 104 where light is irradiated to the light absorbing layer 104 where light is not irradiated. Thus, it is preferable to shorten the light irradiation time.

In addition, film formation by light irradiation is preferably performed in a reduced pressure atmosphere. Therefore, the atmosphere in the film formation chamber is preferably 5 × 10 ⁻³ Pa or less, and more preferably 10 ⁻⁶ Pa to 10 ⁻⁴ Pa.

Furthermore, as the light 110 to be irradiated, laser light having a frequency of 10 MHz or more and a pulse width of 100 fs to 10 ns is preferable. Thus, by using laser light with a very small pulse width, heat conversion in the light absorption layer 104 is efficiently performed, and the material can be efficiently heated.

Laser light having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less can be irradiated with laser light for a short time, so that heat diffusion can be suppressed and a fine pattern can be formed. In addition, since laser light having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less can be output, a large area can be processed at a time, and the time required for film formation can be reduced. Therefore, productivity can be improved.

When the distance d defined by the shortest distance between the surface of the first substrate 101 and the surface of the second substrate 107 is shortened, the outermost layer of the first substrate 101 may be in contact with the outermost surface of the second substrate 107. is there. FIG. 2 shows an example in which the distance d is shortened.

As shown in FIG. 2A, the first substrate 101 and the second substrate 107 are such that the material layer 105 which is the outermost surface of the first substrate 101 and the second substrate 107 are in partial contact with each other. They are arranged at a short distance d. As described above, when the outermost layers of the first substrate 101 and the second substrate 107 have unevenness, there may be a region where the outermost layers are in contact with each other and a region where the outermost layers are not in contact with each other.

2B, similarly to FIG. 1, the light absorption layer 104 is irradiated with light 110 from the first substrate 101 side, and heat obtained from the absorbed light is applied to the material included in the material layer 105, whereby the material At least part of the material included in the layer 105 is formed as the film 111 over the second substrate 107. A film 111 is formed in a pattern that reflects the shape of the reflective layer 102 selectively provided over the second substrate 107 (see FIG. 2C). When the distance d is thus reduced, the shape of the film 111 formed over the second substrate 107 can be formed with high accuracy when light is irradiated as shown in FIG.

In addition, when there is a possibility that light transmitted through the opening of the reflective layer 102 may circulate, a structure in which the opening of the reflective layer 102 is made small in consideration of irradiating light to irradiate.

In the present invention, a material layer is formed on a deposition substrate by a wet method, and light is irradiated from the lower side of the deposition substrate to deposit a material included in the material layer on a deposition target substrate disposed above. To do. Therefore, the film formation substrate can be arranged with the material layer side facing upward (also referred to as a so-called face-up arrangement) throughout the film formation process. Since it is not necessary to dispose the deposition substrate with the material layer side down (also referred to as a so-called face-down arrangement) during the process, contamination of the material layer with dust or the like during the process can be reduced.

When producing a full-color display, it is necessary to make a light emitting layer separately. Therefore, if a light emitting layer is formed by using the film forming method of the present invention, the light emitting layer can be easily made in a desired pattern. In addition, the light emitting layer can be made with high accuracy.

By applying the present invention, the film thickness of the film formed on the second substrate, which is the deposition target substrate, is controlled by controlling the film thickness of the material layer formed on the first substrate. can do. That is, the film thickness of the material layer is set in advance so that the film formed on the second substrate has a desired film thickness by depositing all the materials included in the material layer formed on the first substrate. Since it is controlled, it is not necessary to monitor the film thickness when the film is formed on the second substrate. Therefore, it is not necessary for the user to adjust the film formation rate using the film thickness monitor, and the film formation process can be fully automated. Therefore, productivity can be improved.

In addition, by applying the present invention, the material included in the material layer 105 formed over the first substrate can be uniformly formed. Even when the material layer 105 includes a plurality of materials, a film containing the same material as the material layer 105 in substantially the same weight ratio can be formed over the second substrate which is a deposition substrate. Therefore, in the film forming method according to the present invention, even when a film is formed using a plurality of materials having different film forming temperatures, it is not necessary to control the evaporation rate as in the case of co-evaporation. Therefore, it is possible to easily and accurately form a layer containing different desired materials without complicated control of the deposition rate or the like.

Further, in the film forming method of the present invention, it is possible to form a film on a deposition target substrate without wasting a desired material. Therefore, the utilization efficiency of the material can be improved and the manufacturing cost can be reduced. Further, the material can be prevented from adhering to the film formation chamber wall, and the maintenance of the film formation apparatus can be facilitated.

In addition, by applying the present invention, a flat and uniform film can be formed. In addition, since a film can be formed only in a desired region, a fine pattern can be formed, and a high-definition light-emitting device can be manufactured.

In addition, by applying the present invention, a film can be selectively formed in a desired region at the time of film formation using a laser beam, so that the use efficiency of the material can be increased, and a desired region can be accurately obtained. Since it is easy to form a film in a shape, productivity can be improved.

(Embodiment 2)
In this embodiment, another example of a deposition substrate that can be used in the present invention will be described with reference to FIGS.

FIG. 3A illustrates a structure in which a heat insulating layer 112 serving as a second heat insulating layer is provided between the light absorption layer 104 and the material layer 105. The heat insulating layer 112 is selectively formed in a region overlapping with the reflective layer 102. When light is irradiated for film formation, heat in the light absorption layer 104 formed at a position overlapping with the opening 106 is transmitted to the light absorption layer 104 formed at a position overlapping with the reflection layer 102 ( Even if heat is transmitted in the surface direction of the light absorption layer 104), since the heat insulating layer 112 is provided, the heat can be prevented from being transmitted to the material layer 105. Therefore, it is possible to prevent a film formation pattern from being blurred by heating the material layer 105 formed in a region overlapping with the reflective layer 102. Further, by providing the heat insulating layer 112, a distance can be provided between the light absorption layer 104 serving as a heat source and the deposition target substrate, so that the second substrate 107 is heated by heat from the light absorption layer 104. Therefore, it is possible to prevent the film formation failure. Furthermore, since the film formation direction of the material to be deposited from the material layer 105 onto the deposition target substrate can be controlled, blurring of the deposition pattern on the deposition surface can be prevented. Note that the material and the film formation method used for the heat insulation layer 112 which is the second heat insulation layer can be the same as the material and the film formation method used for the heat insulation layer 103. Unlike the case of, there is no particular limitation.

In addition, the thickness of the heat insulating layer 112 which is the second heat insulating layer is preferably larger than that of the heat insulating layer 103. Specifically, the thickness of the heat insulating layer 112 is preferably 1 μm to 10 μm. By increasing the thickness of the heat insulating layer 112, the effect of providing the above-described second heat insulating layer becomes more remarkable. As shown in FIG. 3B, by increasing the thickness of the heat insulating layer 112, the material layer 105 formed over the heat insulating layer 112 becomes discontinuous, and thus heat is prevented from being transmitted in the surface direction of the material layer 105. This can further prevent the film formation pattern from being blurred.

Note that although FIG. 1 illustrates the case where the light absorption layer 104 is formed over the entire surface of the first substrate 101, the light absorption layer 104 is selectively formed as illustrated in FIG. Also good. By forming the light absorption layer 104 in an island shape in this way, when light is irradiated for film formation, heat in the light absorption layer 104 is transmitted to the light absorption layer 104 in the surface direction, and the reflection layer It is possible to prevent the film formation pattern on the film formation surface from being shifted or blurred, which is caused by heating the material layer 105 formed in the region overlapping with 102. Note that FIG. 3C illustrates the case where the end of the reflective layer 102 and the end of the light absorption layer 104 are aligned; however, the reflective layer 102 and the light are not irradiated to the deposition target substrate. You may form so that the absorption layer 104 may overlap partially.

In addition to the structure shown in FIG. 3C, a heat insulating layer 112 which is a second heat insulating layer may be formed as shown in FIG. In the structure illustrated in FIG. 3D, the reflective layer 102, the heat insulating layer 103, and the light absorption layer 104 are sequentially formed over the first substrate 101, and the heat insulating layer 112 is formed at a position overlapping the reflective layer 102. In this structure, the material layer 105 is formed over the light absorption layer 104 and the heat insulating layer 112.

Further, as shown in FIG. 4A, the heat insulating layer 103 may be patterned in an island shape. At this time, the heat insulating layer 103 is overlapped with the reflective layer 102 and is not formed in the opening 106. Even if the heat insulating layer 103 is formed in an island shape as shown in FIG. 4A, blurring of the film formation pattern can be prevented as in FIG. In addition, by forming the heat insulating layer 103 in an island shape in this way, the film thickness of the heat insulating layer 103 can be increased as compared with the case where the heat insulating layer is also formed in the opening. For example, as illustrated in FIG. 4B, the thickness of the heat insulating layer 103 can be increased so that the light absorption layer 104 and the material layer 105 are discontinuous.

Further, as shown in FIG. 4C, a heat insulating layer 112 which is a second heat insulating layer can be further provided in the structure shown in FIG. In FIG. 4C, the light-absorbing layer 104 is formed in a position where the reflective layer 102, the heat-insulating layer 103, and the reflective layer 102 on the light-absorbing layer 104 are sequentially formed over the first substrate 101. In addition, the material layer 105 is formed over the heat insulating layer 112. By adopting such a structure, it is possible to further prevent the film formation pattern from being blurred.

4D, the thickness of the heat insulating layer 112 is preferably larger than that of the heat insulating layer 103. By increasing the thickness of the heat insulating layer 112, the effect of providing the above-described second heat insulating layer becomes more remarkable. In addition, since the material layer 105 becomes discontinuous by increasing the thickness of the heat insulating layer 112, heat can be prevented from being transmitted in the surface direction of the material layer 105, and the film formation pattern can be further prevented from being blurred. .

A film formation substrate shown in FIGS. 3A to 3D and FIGS. 4A to 4D is irradiated with light in the same manner as in Embodiment Mode 1 to form a desired pattern on the deposition substrate. A film can be formed with Therefore, with the use of the deposition substrate described in this embodiment, the same effects as those in Embodiment 1 can be obtained.

In the present invention, a thin film with a fine pattern can be formed on a deposition target substrate without providing a mask between the material and the deposition target substrate.

(Embodiment 3)
In this embodiment, a method for manufacturing a light-emitting device capable of full-color display by forming an EL layer of a light-emitting element using a plurality of deposition substrates described in Embodiments 1 and 2 is described. To do.

In the present invention, an EL layer made of the same material can be formed over a plurality of electrodes formed over a second substrate, which is a deposition substrate, in a single film formation step. In addition, according to the present invention, any of three types of EL layers that emit different light can be formed over a plurality of electrodes formed over the second substrate, so that a light-emitting device capable of full color display can be manufactured.

First, in Embodiment 1, for example, three deposition substrates illustrated in FIG. 1A are prepared. Each film-forming substrate is formed with a material layer for forming EL layers having different light emission. Specifically, a first deposition substrate having a material layer (R) containing a material for forming an EL layer that emits red light (EL layer (R)), and an EL layer (EL that emits green light) A second film formation substrate having a material layer (G) including a material for forming the layer (G)) and a material for forming an EL layer (EL layer (B)) that emits blue light. A third film formation substrate having a material layer (B) is prepared.

In addition, one deposition target substrate having a plurality of first electrodes is prepared. Note that the end portions of the plurality of first electrodes over the deposition target substrate are covered with the insulating layer, and thus the light-emitting region is part of the first electrode and does not overlap with the insulating layer. It corresponds to the area exposed to.

First, as a first film formation step, the film formation substrate and the first film formation substrate are overlapped and aligned in the same manner as in FIG. Note that an alignment marker is preferably provided on the deposition target substrate. In addition, it is preferable to provide an alignment marker also on the first film formation substrate. Note that since the first film-formation substrate is provided with the light absorption layer, the light absorption layer around the alignment marker is preferably removed in advance. In addition, since the first deposition substrate is provided with the material layer (R), it is preferable to remove the material layer (R) around the alignment marker in advance.

Then, light is irradiated from the back surface side (the surface on which the reflective layer 102, the heat insulating layer 103, the light absorption layer 104, and the material layer 105 illustrated in FIG. 1 are not formed) of the first deposition substrate. The light absorption layer absorbs the irradiated light and applies heat to the material layer (R), thereby heating the material included in the material layer (R), and a part of the first first layer on the deposition target substrate. An EL layer (R) 411 is formed over the electrode. After the first film formation, the first film formation substrate is moved to a location away from the film formation substrate.

Next, as a second deposition step, the deposition target substrate and the second deposition substrate are overlapped and aligned. The second film-formation substrate is formed with an opening of the reflective layer that is shifted by one pixel from the first film-formation substrate used in the first film-formation.

Then, light is irradiated from the back surface side (the surface on which the reflective layer 102, the heat insulating layer 103, the light absorption layer 104, and the material layer 105 illustrated in FIG. 1 are not formed) of the second deposition substrate. The light absorption layer absorbs irradiated light and applies heat to the material layer (G), thereby heating the material included in the material layer (G), and being a part on the deposition target substrate, The EL layer (G) is formed over the first electrode next to the first electrode on which the EL layer (R) is formed in the first deposition. After the second film formation, the second film formation substrate is moved away from the film formation substrate.

Next, as a third deposition step, the deposition target substrate and the third deposition substrate are overlapped and aligned. In the third film formation substrate, an opening of the reflective layer is formed by being shifted by two pixels from the first film formation substrate used in the first film formation.

Then, light is irradiated from the back surface side (the surface on which the reflective layer 102, the heat insulating layer 103, the light absorption layer 104, and the material layer 105 illustrated in FIG. 1 are not formed) of the third deposition substrate. The state immediately before the third film formation corresponds to the plan view of FIG. In FIG. 10A, the reflective layer 401 has an opening 402. Therefore, light transmitted through the opening 402 of the reflective layer 401 of the third deposition substrate is transmitted through the heat insulating layer and absorbed by the light absorption layer. A first electrode is formed in a region of the deposition target substrate that overlaps with the opening 402 of the third deposition substrate. Note that an EL layer (R) 411 already formed by the first film formation and an EL layer (G) formed by the second film formation are below the region indicated by the dotted line in FIG. 412 is located.

Then, the EL layer (B) 413 is formed by the third deposition. The light absorption layer absorbs the irradiated light and applies heat to the material layer (B), thereby heating the material contained in the material layer (B), and being a part on the deposition target substrate, The EL layer (B) 413 is formed over the first electrode next to the first electrode on which the EL layer (G) 412 is formed in the second deposition. After the third deposition, the third deposition substrate is moved to a location away from the deposition target substrate.

In this manner, the EL layer (R) 411, the EL layer (G) 412, and the EL layer (B) 413 can be formed over the same deposition target substrate at regular intervals. A light emitting element can be formed by forming a second electrode over these films.

Through the above process, a light-emitting element capable of full color display can be formed by forming light-emitting elements that emit different light on the same substrate.

FIG. 10 shows an example in which the shape of the opening 402 of the reflective layer formed on the deposition substrate is rectangular, but there is no particular limitation, and a stripe-shaped opening may be used. In the case of a stripe-shaped opening, a film is also formed between light emitting regions having the same light emission color, but since the film is formed on the insulating layer 414, a portion overlapping with the insulating layer 414 does not become a light emitting region. .

The arrangement of the pixels is not particularly limited, and as shown in FIG. 11A, one pixel shape may be a polygon, for example, a hexagon, and the EL layer (R) 511, the EL layer (G) 512, The EL layer (B) 513 can be provided to realize a full color light emitting device. Note that in order to form a polygonal pixel illustrated in FIG. 11A, a film can be formed using a deposition substrate having a reflective layer 501 having a polygonal opening 502 illustrated in FIG. Good.

In manufacturing a light-emitting device capable of full-color display described in this embodiment, the thickness of a film formed over a deposition target substrate is controlled by controlling the thickness of a material layer formed over the deposition substrate. Can be controlled. That is, the thickness of the material layer is set in advance so that the film formed on the deposition target substrate has a desired thickness by depositing all the materials included in the material layer formed on the deposition substrate. Since it is controlled, it is not necessary to monitor the film thickness when forming a film on the film formation substrate. Therefore, it is not necessary for the user to adjust the film formation rate using the film thickness monitor, and the film formation process can be fully automated. Therefore, productivity can be improved.

In addition, in manufacturing a light-emitting device capable of full-color display described in this embodiment, the present invention can be applied to uniformly form a material included in a material layer formed over a deposition substrate. it can. Further, even when the material layer includes a plurality of materials, a film containing the same material as the material layer in substantially the same weight ratio can be formed over the deposition target substrate. Therefore, the film forming method according to the present invention can easily form a layer containing different desired materials without complicated control of the evaporation rate even when a plurality of materials having different film forming temperatures are used. The film can be formed with high accuracy.

In addition, in manufacturing a light-emitting device capable of full-color display described in this embodiment, by applying the present invention, a film can be formed over a deposition target substrate without wasting a desired material. . Therefore, the utilization efficiency of the material can be improved and the manufacturing cost can be reduced. In addition, the material can be prevented from adhering to the inner wall of the film formation chamber, and the maintenance of the film formation apparatus can be simplified.

In addition, in manufacturing a light-emitting device capable of full-color display described in this embodiment, by applying the present invention, a flat and uniform film can be formed, and a fine pattern can be formed. Therefore, a high-definition light-emitting device can be obtained.

In addition, by applying the present invention, a film can be selectively formed in a desired region at the time of film formation using a laser beam, so that the use efficiency of the material can be increased, and a desired region can be accurately obtained. Since it is easy to form a film in a shape, productivity of the light emitting device can be improved. In the present invention, since a high-power laser beam can be used as a light source, a large area can be formed. Therefore, the time (takt time) required for film formation can be shortened, and productivity can be improved.

Note that the structure described in this embodiment can be combined with any of the structures described in Embodiments 1 and 2 as appropriate.

(Embodiment 4)
In this embodiment mode, a method for manufacturing a light-emitting element and a light-emitting device by applying the present invention will be described.

By applying the present invention, for example, a light-emitting element illustrated in FIGS. 12A and 12B can be manufactured. In the light-emitting element illustrated in FIG. 12A, a first electrode 902, an EL layer 903 formed using only the light-emitting layer 913, and a second electrode 904 are sequentially stacked over a substrate 901. One of the first electrode 902 and the second electrode 904 functions as an anode, and the other functions as a cathode. The holes injected from the anode and the electrons injected from the cathode are recombined in the EL layer 903, so that light emission can be obtained. In this embodiment mode, the first electrode 902 is an electrode that functions as an anode, and the second electrode 904 is an electrode that functions as a cathode.

12B illustrates the case where the EL layer 903 in FIG. 12A has a structure in which a plurality of layers are stacked. Specifically, the light-emitting element in FIG. The hole injection layer 911, the hole transport layer 912, the light emitting layer 913, the electron transport layer 914, and the electron injection layer 915 are sequentially provided. Note that the EL layer 903 functions as long as it has at least the light-emitting layer 913 as illustrated in FIG. 12A. Therefore, it is not necessary to provide all of these layers, and the EL layer 903 can be appropriately selected as necessary. That's fine.

A substrate having an insulating surface or an insulating substrate is used as the substrate 901 illustrated in FIG. Specifically, various glass substrates, quartz substrates, ceramic substrates, sapphire substrates and the like used for the electronic industry such as aluminosilicate glass, aluminoborosilicate glass, and barium borosilicate glass can be used.

The first electrode 902 and the second electrode 904 can be formed using various metals, alloys, electrically conductive compounds, mixtures thereof, and the like. Specifically, for example, indium tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide, indium zinc oxide (IZO), tungsten oxide, and oxide. Examples thereof include indium oxide containing zinc. In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium ( Pd), or a nitride of a metal material (for example, titanium nitride).

These materials are usually formed by sputtering. For example, indium oxide-zinc oxide can be formed by a sputtering method using a target in which 1 to 20 wt% of zinc oxide is added to indium oxide. Further, indium oxide containing tungsten oxide and zinc oxide can be formed by a sputtering method using a target containing 0.5 to 5 wt% tungsten oxide and 0.1 to 1 wt% zinc oxide with respect to indium oxide. it can. In addition, a sol-gel method or the like may be applied to produce the ink-jet method or the spin coat method.

Alternatively, aluminum (Al), silver (Ag), an alloy containing aluminum, or the like can be used. In addition, materials having a small work function, elements belonging to Group 1 or Group 2 of the periodic table of elements, that is, alkali metals such as lithium (Li) and cesium (Cs), and magnesium (Mg) and calcium (Ca) Alkaline earth metals such as strontium (Sr), and alloys containing these (aluminum, magnesium and silver alloys, aluminum and lithium alloys), rare earth metals such as europium (Eu), ytterbium (Yb), and the like An alloy containing the same can also be used.

A film of an alkali metal, an alkaline earth metal, or an alloy containing these can be formed using a vacuum evaporation method. An alloy containing an alkali metal or an alkaline earth metal can also be formed by a sputtering method. Further, a silver paste or the like can be formed by an inkjet method or the like. In addition, the first electrode 902 and the second electrode 904 are not limited to a single layer film and can be formed using a stacked film.

Note that in order to extract light emitted from the EL layer 903 to the outside, one or both of the first electrode 902 and the second electrode 904 are formed so as to pass light. For example, a light-transmitting conductive material such as indium tin oxide is used, or silver, aluminum, or the like is formed to have a thickness of several nanometers to several tens of nanometers. Alternatively, a stacked structure of a thin metal film such as silver or aluminum and a thin film using a light-transmitting conductive material such as an ITO film can be used.

Note that the EL layer 903 (a hole-injection layer 911, a hole-transport layer 912, a light-emitting layer 913, an electron-transport layer 914, or an electron-injection layer 915) of the light-emitting element described in this embodiment is described in Embodiment 1. It can be formed by applying a film formation method. Alternatively, the electrode can be formed by applying the deposition method described in Embodiment Mode 1.

For example, in the case of forming the light-emitting element illustrated in FIG. 12A, the material layer of the deposition substrate described in Embodiment 1 is formed using a material for forming the EL layer 903, and this deposition substrate is used. An EL layer 903 is formed over the first electrode 902 over the substrate 901. Then, by forming the second electrode 904 over the EL layer 903, the light-emitting element illustrated in FIG. 12A can be obtained.

In the case where the light-emitting layer 913 is formed using the film-forming method of the present invention, for example, N- (9,10-diphenyl-2-anthryl) -N, 9-diphenyl-9H-carbazol-3-amine ( (Abbreviation: 2PCAPA) and (acetylacetonato) bis (2,3,5-triphenylpyrazinato) iridium (III) (abbreviation: Ir (tppr) ₂ (acac)) can be used. In the case of using 2PCAPA as a light-emitting material, a wet composition is used for a liquid composition prepared by dissolving 9- [4- (9H-carbazolyl) phenyl] -10-phenylanthracene (abbreviation: CzPA) and 2PCAPA in a solvent toluene. To form a material layer on the deposition substrate.

In addition, when Ir (tppr) ₂ (acac) is used as a light-emitting material, bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (III) (abbreviation: BAlq), N, N′-bis (3-Methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD), Ir (tppr) ₂ (acac) in the solvent 2-methoxyethanol A liquid composition prepared by dissolution is formed as a material layer on a deposition substrate using a wet method.

By irradiating the light absorption layer with laser light, 2PCAPA or Ir (tppr) ₂ (acac) contained in the material layer is formed on the electrode of the deposition substrate.

Various materials can be used for the light-emitting layer 913. For example, a fluorescent compound that emits fluorescence or a phosphorescent compound that emits phosphorescence can be used.

As a phosphorescent compound that can be used for the light-emitting layer 913, for example, bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ² ′] iridium (III) tetrakis can be used as a blue light-emitting material. (1-pyrazolyl) borate (abbreviation: FIr6), bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ² ′] iridium (III) picolinate (abbreviation: FIrpic), bis [2- ( 3 ′, 5′bistrifluoromethylphenyl) pyridinato-N, C ² ′] iridium (III) picolinate (abbreviation: Ir (CF ₃ ppy) ₂ (pic)), bis [2- (4 ′, 6′-difluoro) Phenyl) pyridinato-N, C ² ′] iridium (III) acetylacetonate (abbreviation: FIracac) and the like. As a green light-emitting material, tris (2-phenylpyridinato-N, C ² ′) iridium (III) (abbreviation: Ir (ppy) ₃ ), bis (2-phenylpyridinato-N, C ² ′) iridium (III) acetylacetonate (abbreviation: Ir (ppy) ₂ (acac)), bis (1,2-diphenyl-1H-benzimidazolato) iridium (III) acetylacetonate (abbreviation: Ir (pbi) ) ₂ (acac)), bis (benzo [h] quinolinato) iridium (III) acetylacetonate (abbreviation: Ir (bzq) ₂ (acac)), and the like. Further, as yellow light-emitting materials, bis (2,4-diphenyl-1,3-oxazolate-N, C ² ′) iridium (III) acetylacetonate (abbreviation: Ir (dpo) ₂ (acac)), bis [2- (4′-perfluorophenylphenyl) pyridinato] iridium (III) acetylacetonate (abbreviation: Ir (p-PF-ph) ₂ (acac)), bis (2-phenylbenzothiazolate-N, C ² ′) iridium (III) acetylacetonate (abbreviation: Ir (bt) ₂ (acac)) and the like. As an orange light-emitting material, tris (2-phenylquinolinato-N, C ² ′) iridium (III) (abbreviation: Ir (pq) ₃ ), bis (2-phenylquinolinato-N, C ² ′) ) Iridium (III) acetylacetonate (abbreviation: Ir (pq) ₂ (acac)) and the like. As a red light-emitting material, bis [2- (2′-benzo [4,5-α] thienyl) pyridinato-N, C ³ ′] iridium (III) acetylacetonate (abbreviation: Ir (btp) ₂ (Acac)), bis (1-phenylisoquinolinato-N, C ² ') iridium (III) acetylacetonate (abbreviation: Ir (piq) ₂ (acac)), (acetylacetonato) bis [2,3 -Bis (4-fluorophenyl) quinoxalinato] iridium (III) (abbreviation: Ir (Fdpq) ₂ (acac)), 2,3,7,8,12,13,17,18-octaethyl-21H, 23H-porphyrin And organometallic complexes such as platinum (II) (abbreviation: PtOEP). In addition, tris (acetylacetonato) (monophenanthroline) terbium (III) (abbreviation: Tb (acac) ₃ (Phen)), tris (1,3-diphenyl-1,3-propanedionate) (monophenanthroline) europium (III) (abbreviation: Eu (DBM) ₃ (Phen)), tris [1- (2-thenoyl) -3,3,3-trifluoroacetonato] (monophenanthroline) europium (III) (abbreviation: Eu ( Since rare earth metal complexes such as TTA) ₃ (Phen)) emit light from rare earth metal ions (electron transition between different multiplicity), they can be used as phosphorescent compounds.

As a fluorescent compound that can be used for the light-emitting layer 913, for example, N, N′-bis [4- (9H-carbazol-9-yl) phenyl] -N, N′-diphenyl is used as a blue light-emitting material. And stilbene-4,4′-diamine (abbreviation: YGA2S), 4- (9H-carbazol-9-yl) -4 ′-(10-phenyl-9-anthryl) triphenylamine (abbreviation: YGAPA), and the like. . As green light-emitting materials, N- (9,10-diphenyl-2-anthryl) -N, 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N- [9,10-bis] (1,1′-biphenyl-2-yl) -2-anthryl] -N, 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N- (9,10-diphenyl-2-anthryl) -N, N ', N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N- [9,10-bis (1,1'-biphenyl-2-yl) -2-anthryl]- N, N ′, N′-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis (1,1′-biphenyl-2-yl) -N- [4- (9H-carbazole) 9-yl) phenyl] -N- phenyl-anthracene-2-amine (abbreviation: 2YGABPhA), N, N, 9- triphenylamine anthracene-9-amine (abbreviation: DPhAPhA), and the like. In addition, examples of a yellow light-emitting material include rubrene, 5,12-bis (1,1′-biphenyl-4-yl) -6,11-diphenyltetracene (abbreviation: BPT), and the like. As red light-emitting materials, N, N, N ′, N′-tetrakis (4-methylphenyl) tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,13-diphenyl-N, N , N ′, N′-tetrakis (4-methylphenyl) acenaphtho [1,2-a] fluoranthene-3,10-diamine (abbreviation: p-mPhAFD) and the like.

Alternatively, the light-emitting layer 913 can have a structure in which a substance having high light-emitting properties (dopant material) is dispersed in another substance (host material). By using a structure in which a substance having high luminescence (dopant material) is dispersed in another substance (host material), crystallization of the light emitting layer can be suppressed. In addition, concentration quenching due to a high concentration of a light-emitting substance can be suppressed.

As a substance that disperses a highly luminescent substance, when the luminescent substance is a fluorescent compound, the singlet excitation energy (energy difference between the ground state and the singlet excited state) is larger than that of the fluorescent compound. It is preferable to use a substance. In the case where the light-emitting substance is a phosphorescent compound, it is preferable to use a substance having a triplet excitation energy (energy difference between the ground state and the triplet excited state) larger than that of the phosphorescent compound.

As a host material used for the light-emitting layer 913, for example, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), tris (8-quinolinolato) aluminum (III) (abbreviation) : Alq), 4,4′-bis [N- (9,9-dimethylfluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: DFLDPBi), bis (2-methyl-8-quinolinolato) (4 -Phenylphenolato) Aluminum (III) (abbreviation: BAlq), 4,4'-di (9-carbazolyl) biphenyl (abbreviation: CBP), 2-tert-butyl-9,10-di (2- Naphthyl) anthracene (abbreviation: t-BuDNA), 9- [4- (9-carbazolyl) phenyl] -10-phenylanthracene (abbreviation: CzPA), etc. And the like.

Moreover, as a dopant material, the phosphorescent compound and fluorescent compound which were mentioned above can be used.

In the case where a structure in which a light-emitting substance (dopant material) is dispersed in another substance (host material) is used as the light-emitting layer 913, a host material and a guest material are used as a material layer over a deposition substrate. A mixed layer may be formed. Alternatively, the material layer over the deposition substrate may have a structure in which a layer containing a host material and a layer containing a dopant material are stacked. By forming the light-emitting layer 913 using the deposition substrate having the material layer having such a structure, the light-emitting layer 913 includes a substance that disperses the light-emitting material (host material), a substance having high light-emitting property (dopant material), and the like. The material (host material) in which the light-emitting material is dispersed is dispersed in a material (dopant material) having high light-emitting properties. Note that as the light-emitting layer 913, two or more kinds of host materials and dopant materials may be used, or two or more kinds of dopant materials and host materials may be used. Two or more types of host materials and two or more types of dopant materials may be used.

In the case of forming the light-emitting element illustrated in FIG. 12B, an EL layer 903 (a hole injection layer 911, a hole transport layer 912, a light-emitting layer 913, an electron transport layer 914, and an electron injection layer 915) is formed. The film formation substrate described in Embodiment 1 having a material layer formed using a material for forming each layer is prepared for each layer, and a different film formation substrate is used for each film formation. With the method described in Embodiment Mode 1, the EL layer 903 can be formed over the first electrode 902 over the substrate 901. Then, by forming the second electrode 904 over the EL layer 903, the light-emitting element illustrated in FIG. 12B can be obtained. Note that in this case, the method described in Embodiment Mode 1 can be used for all layers of the EL layer 903, but the method shown in Embodiment Mode 1 can be used for only a part of the layers.

When laminating a film on a deposition target substrate by a wet method, a lower layer film dissolves depending on the solvent contained in the composition because a liquid composition containing materials is directly deposited on the lower layer film. Therefore, the materials that can be stacked are limited. However, in the case of forming a stack using the film forming method of the present invention, the solvent does not adhere directly to the lower layer film, so that it is not necessary to consider the influence of the solvent on the lower layer film. Therefore, the degree of freedom in the selectivity of materials that can be stacked is wide. In addition, in order to form a material layer using a wet method on a deposition substrate that is different from the deposition target substrate, heat treatment for removing the solvent and improving the film quality can be sufficiently performed. On the other hand, if a film is directly formed on a deposition substrate by a wet method, heat treatment must be performed under heating conditions that do not affect the underlying film already deposited on the deposition substrate. May not be able to achieve a satisfactory improvement in film quality.

For example, as the hole injection layer 911, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used. In addition, phthalocyanine compounds such as phthalocyanine (abbreviation: H ₂ Pc) and copper phthalocyanine (abbreviation: CuPc), or poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonic acid) (PEDOT / PSS) The hole injection layer can also be formed by a polymer such as the above.

As the hole-injecting layer 911, a layer containing a substance having a high hole-transport property and a substance showing an electron-accepting property can be used. A layer including a substance having a high hole-transport property and a substance having an electron-accepting property has a high carrier density and an excellent hole-injection property. In addition, by using a layer containing a substance having a high hole transporting property and a substance showing an electron accepting property as a hole injection layer in contact with the electrode functioning as the anode, the work function of the electrode material functioning as the anode can be reduced. Regardless, various metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be used.

As a substance having an electron accepting property used for the hole injection layer 911, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, and the like can be used. Can be mentioned. Moreover, a transition metal oxide can be mentioned. In addition, oxides of metals belonging to Groups 4 to 8 in the periodic table can be given. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide are preferable because of their high electron accepting properties. Among these, molybdenum oxide is especially preferable because it is stable in the air, has a low hygroscopic property, and is easy to handle.

As the substance having a high hole-transport property used for the hole-injection layer 911, various compounds such as an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, and a high molecular compound (oligomer, dendrimer, polymer, or the like) can be used. it can. Note that the substance having a high hole-transport property used for the hole-injection layer is preferably a substance having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Hereinafter, substances having a high hole-transport property that can be used for the hole-injection layer 911 are specifically listed.

For example, as an aromatic amine compound that can be used for the hole injection layer 911, for example, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD), 4,4 ′, 4 ″ -tris ( N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB) or the like can be used. N, N′-bis (4-methylphenyl) (p-tolyl) -N, N′-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4′-bis [N- (4-diphenyl) Aminophenyl) -N-phenylamino] biphenyl (abbreviation: DPAB), 4,4′-bis (N- {4- [N ′-(3-methylphenyl) -N′-phenylamino] phenyl} -N— Phenylamino) biphenyl (abbreviation: DNTPD), 1,3,5-tris [N- (4-diphenylaminophenyl) -N-phenylamino] benzene (abbreviation: DPA3B), and the like.

As a carbazole derivative that can be used for the hole-injection layer 911, specifically, 3- [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA1) ), 3,6-bis [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA2), 3- [N- (1-naphthyl) -N- (9-phenylcarbazol-3-yl) amino] -9-phenylcarbazole (abbreviation: PCzPCN1) and the like can be given.

Examples of the carbazole derivative that can be used for the hole-injection layer 911 include 4,4′-di (N-carbazolyl) biphenyl (abbreviation: CBP), 1,3,5-tris [4- (N-carbazolyl). Phenyl] benzene (abbreviation: TCPB), 9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: CzPA), 1,4-bis [4- (N-carbazolyl) phenyl] -2,3,5,6-tetraphenylbenzene and the like can be used.

Examples of aromatic hydrocarbons that can be used for the hole injection layer 911 include 2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 2-tert- Butyl-9,10-di (1-naphthyl) anthracene, 9,10-bis (3,5-diphenylphenyl) anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis (4-phenylphenyl) ) Anthracene (abbreviation: t-BuDBA), 9,10-di (2-naphthyl) anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-) BuAnth), 9,10-bis (4-methyl-1-naphthyl) anthracene (abbreviation: DMNA), 9,10-bis [2 (1-naphthyl) phenyl] -2-tert-butyl-anthracene, 9,10-bis [2- (1-naphthyl) phenyl] anthracene, 2,3,6,7-tetramethyl-9,10-di ( 1-naphthyl) anthracene, 2,3,6,7-tetramethyl-9,10-di (2-naphthyl) anthracene, 9,9′-bianthryl, 10,10′-diphenyl-9,9′-bianthryl, 10,10′-bis (2-phenylphenyl) -9,9′-bianthryl, 10,10′-bis [(2,3,4,5,6-pentaphenyl) phenyl] -9,9′-bianthryl , Anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra (tert-butyl) perylene, and the like. In addition, pentacene, coronene, and the like can also be used. Thus, it is more preferable to use an aromatic hydrocarbon having a hole mobility of 1 × 10 ⁻⁶ cm ² / Vs or more and having 14 to 42 carbon atoms.

Note that the aromatic hydrocarbon that can be used for the hole-injecting layer 911 may have a vinyl skeleton. As the aromatic hydrocarbon having a vinyl group, for example, 4,4′-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), 9,10-bis [4- (2,2- Diphenylvinyl) phenyl] anthracene (abbreviation: DPVPA) and the like.

In addition, a layer including a substance having a high hole-transport property and a substance having an electron-accepting property has not only a hole-injection property but also a good hole-transport property. It may be used as a transport layer.

The hole transport layer 912 is a layer containing a substance having a high hole transport property, and examples of the substance having a high hole transport property include 4,4′-bis [N- (1-naphthyl) -N -Phenylamino] biphenyl (abbreviation: NPB) and N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD) ), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N -Phenylamino] triphenylamine (abbreviation: MTDATA), 4,4'-bis [N- (spiro-9,9'-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB), etc. An aromatic amine compound or the like can be used. The substances described here are mainly substances having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Note that the layer containing a substance having a high hole-transport property is not limited to a single layer, and two or more layers containing the above substances may be stacked.

The electron-transport layer 914 is a layer containing a substance having a high electron-transport property. For example, tris (8-quinolinolato) aluminum (abbreviation: Alq), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ). Bis (10-hydroxybenzo [h] quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (abbreviation: BAlq), quinoline skeleton or benzoquinoline A metal complex having a skeleton can be used. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ)) A metal complex having an oxazole-based or thiazole-based ligand such as ₂ ) can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5 -(P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-biphenylyl) -4-phenyl-5- (4- tert-Butylphenyl) -1,2,4-triazole (abbreviation: TAZ01) bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can also be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than the above substances, any substance that has a property of transporting more electrons than holes may be used for the electron-transport layer. Further, the electron-transport layer is not limited to a single layer, and two or more layers including the above substances may be stacked.

As the electron injection layer 915, an alkali metal compound such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ₂ ), or the like, or an alkaline earth metal compound can be used. Further, a layer in which a substance having an electron transporting property and an alkali metal or an alkaline earth metal are combined can also be used. For example, Alq containing magnesium (Mg) can be used. Note that it is more preferable to use a layer in which an electron-transporting substance and an alkali metal or an alkaline earth metal are combined as the electron-injecting layer because electron injection from the second electrode 904 occurs efficiently.

Note that there is no particular limitation on the layered structure of the EL layer 903, and a substance having a high electron-transport property, a substance having a high hole-transport property, a substance having a high electron-injection property, a substance having a high hole-injection property, or a bipolar property A layer including a substance (a substance having a high electron and hole transporting property) and the light-emitting layer may be combined as appropriate.

Light emission obtained in the EL layer 903 is extracted outside through one or both of the first electrode 902 and the second electrode 904. Accordingly, one or both of the first electrode 902 and the second electrode 904 are light-transmitting electrodes. In the case where only the first electrode 902 is a light-transmitting electrode, light is extracted from the substrate 901 side through the first electrode 902. In the case where only the second electrode 904 is a light-transmitting electrode, light is extracted from the side opposite to the substrate 901 through the second electrode 904. In the case where each of the first electrode 902 and the second electrode 904 is a light-transmitting electrode, light passes through the first electrode 902 and the second electrode 904, and is on the substrate 901 side and the opposite side to the substrate 901. Taken from both.

Note that FIG. 12 illustrates the structure in which the first electrode 902 functioning as an anode is provided on the substrate 901 side; however, the second electrode 904 functioning as a cathode may be provided on the substrate 901 side.

Further, as a formation method of the EL layer 903, the film formation method described in Embodiment 1 may be used, or another film formation method may be combined. Moreover, you may form using the different film-forming method for each electrode or each layer. Examples of the dry method include vacuum vapor deposition, electron beam vapor deposition, and sputtering. Examples of the wet method include an inkjet method and a spin coat method.

In the light-emitting element of this embodiment mode, an EL layer to which the present invention is applied can be formed, whereby a highly accurate film is efficiently formed. Thus, not only the characteristics of the light-emitting element are improved, but also the yield is improved. And cost reduction.

This embodiment mode can be combined with any of Embodiment Modes 1 to 3 as appropriate.

(Embodiment 5)
In this embodiment mode, a passive matrix light-emitting device manufactured using the present invention will be described with reference to FIGS.

FIG. 5 shows a light-emitting device having a passive matrix light-emitting element to which the present invention is applied. FIG. 5A is a plan view of the light-emitting device, and FIG. 5B is a cross-sectional view taken along line Y1-Z1 in FIG.

The light-emitting device in FIG. 5A includes first electrode layers 751a, 751b, and 751c, which are electrode layers used for a light-emitting element extending in a first direction over an element substrate 759, first electrode layers 751a and 751b, EL layers 752a, 752b, and 752c selectively formed over 751c and second electrode layers 753a, 753b, and 753c that are electrode layers used for a light-emitting element extending in a second direction perpendicular to the first direction. And have. An insulating layer 754 serving as a protective film is provided so as to cover the second electrode layers 753a, 753b, and 753c (see FIGS. 5A and 5B).

In FIG. 5, the first electrode layer 751b functioning as a data line (signal line) and the second electrode layer 753b functioning as a scanning line (source line) cross each other with an EL layer 752b interposed therebetween. Thus, a light emitting element 750 is formed.

In this embodiment mode, the EL layers 752a, 752b, and 752c are formed using the film formation method of the present invention as described in Embodiment Mode 1. A method for manufacturing the light-emitting device of this embodiment mode illustrated in FIG. 5 is described with reference to FIGS.

FIG. 7A has a structure similar to that of the deposition substrate in FIG. 3C described in Embodiment Mode 1. A reflective layer 702 is selectively provided with an opening 706 over a substrate 701 which is a deposition substrate, and a heat insulating layer 703 is formed over the reflective layer 702. On the heat insulating layer 703, a light absorption layer 704 is selectively formed in a region that does not overlap with the reflective layer 702.

A material layer 705 is formed over the heat insulating layer 703 and the light absorption layer 704 by a wet method using a liquid composition 161 containing a film formation material (see FIG. 7B).

First electrode layers 751a, 751b, and 751c are formed over an element substrate 759 that is a deposition target substrate, and the element layers 705 face each other so that the first electrode layers 751a, 751b, and 751c face each other. A substrate 759 and a substrate 701 are provided (see FIG. 7C).

Laser light 710 is irradiated from the back surface of the substrate 701 (the surface opposite to the surface on which the material layer 705 is formed), and at least a part of the material contained in the material layer 705 is transferred to the element substrate 759 by heat applied from the light absorption layer 704. The EL layers 752a, 752b, and 752c are formed (see FIG. 7D). Through the above steps, EL layers 752a, 752b, and 752c can be selectively formed over the first electrode layers 751a, 751b, and 751c provided over the substrate 701, respectively (see FIG. 7E). .

A second electrode layer 753b and an insulating layer 754 are formed over the EL layers 752a, 752b, and 752c in FIG. 7E and sealed with the sealing substrate 758, whereby the light-emitting device in FIG. 5B is completed. Can be made.

In the light-emitting device of FIG. 5, the EL layers 752a, 752b, and 752c are larger in size than the widths of the first electrode layers 751a, 751b, and 751c (the width in the Y1-Z1 direction), and the first electrode layers 751a, 751b, It is an example of a shape that covers the end of 751c. This is because, in FIG. 7, the width of the pattern of the light absorption layer which is selectively formed and does not overlap with the reflection layer is set larger than the corresponding pattern of the first electrode layer.

An example in which all regions of the EL layer are formed over the first electrode layer is shown in FIGS. 6A is a plan view of the light-emitting device, and FIG. 6B is a cross-sectional view taken along line Y2-Z2 in FIG. 5A. 6A and 6B, since the EL layers 792a, 792b, and 792c are smaller than the first electrode layers 751a, 751b, and 751c, the EL layers 792a, 792b, and 792c are All the regions are formed on the first electrode layers 751a, 751b, and 751c, respectively. In the film formation method of the present invention, a film is formed on the deposition target substrate, reflecting the pattern of the material layer formed on the light absorption layer that does not overlap the reflective layer in the deposition substrate. Therefore, when the pattern of the material layer formed over the light absorption layer that does not overlap with the reflective layer is set to be smaller than that of the first electrode layers 751a, 751b, and 751c, the EL layers 792a, 792b, and 792c are formed into shapes. can do.

In the passive matrix light-emitting device, a partition wall (insulating layer) that separates light-emitting elements may be provided. Examples of a light-emitting device having a two-layer partition are shown in FIGS. 8A and 8B and FIGS. 9A to 9E.

8A is a plan view of the light-emitting device, FIG. 8B is a cross-sectional view taken along line Y3-Z3 in FIG. 8A, and FIG. 8C is a line V3-X3 in FIG. 8A. FIG. However, FIG. 8A is a plan view up to the step of forming the partition 782, and the EL layer and the second electrode layer are omitted.

As shown in FIGS. 8A to 8C, a partition 780 is selectively formed over the first electrode layers 751a, 751b, and 751c with openings in the pixel region. As shown in FIG. 8B, the partition 780 is formed in a tapered shape so as to cover end portions of the first electrode layers 751a, 751b, and 751c.

A partition 782 is selectively formed over the partition 780. A partition 782 has a function of separating the EL layer and the second electrode layer formed over the partition 782 in a discontinuous manner. The side wall of the partition wall 782 has an inclination such that the distance between one side wall and the other side wall becomes narrower as the element substrate 759 is approached. That is, the cross section in the short side direction of the partition wall 782 has a trapezoidal shape, and the bottom side (the direction facing the surface direction of the partition wall 780 and the side in contact with the partition wall 780) is the upper side (similar to the surface direction of the partition wall 780). The direction is shorter than the side that is not in contact with the partition wall 780. Since the partition wall 782 has a so-called reverse taper shape, the EL layer 752b is divided by the partition wall 782 in a self-aligning manner and can be selectively formed over the first electrode layer 751b. Therefore, even if the shape is not processed by etching, adjacent light emitting elements are separated from each other, and electrical defects such as a short circuit between the light emitting elements can be prevented.

A method for manufacturing the light-emitting device of this embodiment mode illustrated in FIG. 8B using the deposition method of the present invention will be described with reference to FIGS.

FIG. 9A has a structure similar to that of the deposition substrate in FIG. 4A described in Embodiment Mode 1. A reflective layer 712 having an opening 716 is selectively provided over a substrate 711 which is a deposition substrate, and a heat insulating layer 713 is selectively formed on the reflective layer 712 in the same pattern as the reflective layer 712. Yes. A light absorption layer 714 is formed over the substrate 711, the reflective layer 712, and the heat insulating layer 713.

A material layer 715 is formed over the light absorption layer 714 by a wet method using a liquid composition 171 containing a film formation material (see FIG. 9B).

The element substrate 759 which is a deposition substrate is provided with first electrode layers 751a, 751b, and 751c, and partition walls 780. The first electrode layers 751a, 751b, and 751c, partition walls 780, and a material layer 715 are formed. The element substrate 759 and the substrate 711 are arranged so as to face each other (see FIG. 9C).

Laser light 720 is irradiated from the back surface of the substrate 711 (the surface opposite to the surface on which the material layer 715 is formed), and at least a part of the material contained in the material layer 715 is transferred to the element substrate 759 by heat applied from the light absorption layer 714. The EL layers 752a, 752b, and 752c are formed (see FIG. 9D). Through the above steps, EL layers 752a, 752b, and 752c can be selectively formed over the first electrode layers 751a, 751b, and 751c provided over the element substrate 759, respectively (see FIG. 9E). ).

A second electrode layer 753b is formed over the EL layers 752a, 752b, and 752c in FIG. 9E, a filling layer 781 is formed, and sealing is performed using the sealing substrate 758, so that light emission in FIG. The device can be completed.

As the sealing substrate 758, a glass substrate, a quartz substrate, or the like can be used. A flexible substrate may be used. A flexible substrate is a substrate that can be bent (flexible). For example, a plastic substrate made of polycarbonate, polyarylate, polyethersulfone, etc., or plasticized at a high temperature and similar to plastic. Examples thereof include high-molecular material elastomers that can be molded and exhibit the properties of elastic bodies such as rubber at room temperature. Moreover, a film (made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, etc.) or an inorganic vapor deposition film can also be used.

As the partition wall 780 and the partition wall 782, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, other inorganic insulating materials, acrylic acid, methacrylic acid, and derivatives thereof, polyimide, aromatic A heat-resistant polymer such as an aromatic polyamide or polybenzimidazole, or a siloxane resin may be used. Further, a resin material such as a vinyl resin such as polyvinyl alcohol or polyvinyl butyral, an epoxy resin, a phenol resin, a novolac resin, an acrylic resin, a melamine resin, or a urethane resin is used. As a manufacturing method, a vapor deposition method such as a plasma CVD method or a thermal CVD method, or a sputtering method can be used. Alternatively, a droplet discharge method or a printing method can be used. A film obtained by a coating method can also be used.

Next, FIG. 13 shows a plan view in the case where an FPC or the like is mounted on the passive matrix light-emitting device shown in FIG.

In FIG. 13, the pixel portions constituting the image display intersect so that the scanning line group and the data line group are orthogonal to each other.

Here, the first electrode layers 751a, 751b, and 751c in FIG. 5 correspond to the data lines 1102 in FIG. 13, and the second electrode layers 753a, 753b, and 753c in FIG. 5 correspond to the scanning lines 1103 in FIG. The EL layers 752a, 752b, and 752c correspond to the EL layer 1104 in FIG. On the substrate 1101, an EL layer 1104 is sandwiched between the data line 1102 and the scanning line 1103, and an intersection indicated by a region 1105 corresponds to one pixel (indicated by a light emitting element 750 in FIG. 5). .

Note that the scanning line 1103 is electrically connected to the connection wiring 1108 at a wiring end, and the connection wiring 1108 is connected to the FPC 1109 b through the input terminal 1107. The data line 1102 is connected to the FPC 1109a via the input terminal 1106.

Further, if necessary, an optical film such as a polarizing plate or a circular polarizing plate (including an elliptical polarizing plate), a retardation plate (λ / 4 plate, λ / 2 plate), a color filter, etc. is appropriately provided on the exit surface. Also good. Further, an antireflection film may be provided on the polarizing plate or the circularly polarizing plate. For example, anti-glare treatment can be performed that diffuses reflected light due to surface irregularities and reduces reflection.

Note that FIG. 13 illustrates an example in which the driver circuit is not provided over the substrate; however, the present invention is not particularly limited, and an IC chip having the driver circuit may be mounted over the substrate.

When an IC chip is mounted, a data line side IC and a scanning line side IC in which a driving circuit for transmitting each signal to the pixel portion is formed in a peripheral (outside) region of the pixel portion are COG (Chip on Glass). Implement each method. You may mount using TCP and a wire bonding system as mounting techniques other than a COG system. TCP is a TAB (Tape Automated Bonding) tape with an IC mounted thereon, and the TAB tape is connected to a wiring on an element formation substrate to mount the IC. The data line side IC and the scanning line side IC may be those using a single crystal silicon substrate, or may be a glass substrate, a quartz substrate, or a plastic substrate formed with a drive circuit using TFTs. . Further, although an example in which one IC is provided on one side has been described, it may be divided into a plurality of parts on one side.

By using the present invention, a thin film with a fine pattern can be formed on a deposition target substrate without providing a mask between the material and the deposition target substrate. As in this embodiment mode, a light-emitting element can be formed using such a deposition method, so that a high-definition light-emitting device can be manufactured.

This embodiment mode can be combined with any of Embodiment Modes 1 to 4 as appropriate.

(Embodiment 6)
In this embodiment, an active matrix light-emitting device manufactured using the present invention will be described with reference to FIGS.

14A is a plan view illustrating the light-emitting device, and FIG. 14B is a cross-sectional view taken along lines AB and CD of FIG. 14A. Reference numeral 601 indicated by a dotted line denotes a driving circuit portion (source side driving circuit), 602 denotes a pixel portion, and 603 denotes a driving circuit portion (gate side driving circuit). Reference numeral 604 denotes a sealing substrate, reference numeral 605 denotes a sealing material, and the inside surrounded by the sealing material 605 is a space 607.

Note that the routing wiring 608 is a wiring for transmitting a signal input to the source side driving circuit 601 and the gate side driving circuit 603, and a video signal, a clock signal, an FPC (flexible printed circuit) 609 serving as an external input terminal, Receives start signal, reset signal, etc. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.

Next, a cross-sectional structure is described with reference to FIG. A driver circuit portion and a pixel portion are formed over the element substrate 610. Here, a source-side driver circuit 601 that is a driver circuit portion and one pixel in the pixel portion 602 are illustrated.

Note that the source side driver circuit 601 is a CMOS circuit in which an n-channel transistor 623 and a p-channel transistor 624 are combined. Further, the transistor forming the driver circuit may be formed by various CMOS circuits, PMOS circuits, or NMOS circuits. In this embodiment mode, a driver integrated type in which a driver circuit is formed over a substrate is shown; however, this is not necessarily required, and the driver circuit can be formed outside the substrate.

The pixel portion 602 is formed by a plurality of pixels including a switching transistor 611, a current control transistor 612, and a first electrode 613 electrically connected to a drain thereof. Note that an insulating layer 614 is formed so as to cover an end portion of the first electrode 613. Here, a positive photosensitive acrylic resin film is used. The first electrode 613 is formed over an insulating layer 619 that is an interlayer insulating layer.

In order to improve the coverage, a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulating layer 614. For example, when positive photosensitive acrylic is used as the material for the insulating layer 614, it is preferable that only the upper end portion of the insulating layer 614 has a curved surface with a curvature radius (0.2 μm to 3 μm). As the insulating layer 614, either a negative type that becomes insoluble in an etchant by light irradiation or a positive type that becomes soluble in an etchant by light irradiation can be used.

Note that there is no particular limitation on the structure of the transistor. The transistor may have a single gate structure in which one channel formation region is formed, a double gate structure in which two channel formation regions are formed, or a triple gate structure in which three channel formation regions are formed. The transistor in the peripheral driver circuit region may also have a single gate structure, a double gate structure, or a triple gate structure.

The transistor has a top gate type (for example, a forward stagger type, a coplanar type), a bottom gate type (for example, a reverse coplanar type), or two gate electrode layers disposed above and below a channel region via a gate insulating film. It can be applied to a dual gate type and other structures.

Further, there is no particular limitation on the crystallinity of the semiconductor used for the transistor. As a material for forming the semiconductor layer, an amorphous semiconductor manufactured by a vapor deposition method or a sputtering method using a semiconductor material gas typified by silane or germane, and the amorphous semiconductor using light energy or thermal energy. A crystallized polycrystalline semiconductor, a single crystal semiconductor, or the like can be used.

A typical example of an amorphous semiconductor is hydrogenated amorphous silicon, and a typical example of a crystalline semiconductor is polysilicon. Polysilicon (polycrystalline silicon) is mainly made of so-called high-temperature polysilicon using polysilicon formed through a process temperature of 800 ° C. or higher as a main material, or polysilicon formed at a process temperature of 600 ° C. or lower. And so-called low-temperature polysilicon used for the above, and polysilicon obtained by crystallizing amorphous silicon using an element that promotes crystallization. Further, instead of such a thin film process, an SOI substrate in which a single crystal semiconductor layer is provided over an insulating surface may be used. The SOI substrate can be formed using a SIMOX (Separation by IM planted Oxygen) method or a Smart-Cut method. In the SIMOX method, oxygen ions are implanted into a single crystal silicon substrate, an oxygen-containing layer is formed at a predetermined depth, and then heat treatment is performed to form a buried insulating layer at a certain depth from the surface. In this method, a single crystal silicon layer is formed on the layer. In the Smart-Cut method, hydrogen ions are implanted into an oxidized single crystal silicon substrate, a hydrogen-containing layer is formed at a position corresponding to a desired depth, and another supporting substrate (an oxide for bonding to the surface) is formed. A single-crystal silicon substrate having a silicon film is bonded to the hydrogen-containing layer by heat treatment, and a stack of the silicon oxide film and the single-crystal silicon layer is formed on the supporting substrate. It is a method to do.

An EL layer 616 and a second electrode 617 are formed over the first electrode 613. The EL layer 616 of the light-emitting element described in this embodiment can be formed by applying the deposition method described in Embodiment 1.

The light-emitting element 618 is provided in the space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealant 605 by attaching the sealing substrate 604 to the element substrate 610 with the sealant 605. . Note that the space 607 is filled with a filler, and may be filled with a sealant 605 in addition to an inert gas (such as nitrogen or argon).

Note that a visible light curable resin, an ultraviolet curable resin, or a thermosetting resin is preferably used for the sealant 605. Specifically, an epoxy resin can be used. Moreover, it is desirable that these materials are materials that do not transmit moisture and oxygen as much as possible. In addition to a glass substrate or a quartz substrate, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic, or the like can be used as a material used for the sealing substrate 604. Moreover, a film (made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, etc.) or an inorganic vapor deposition film can also be used.

Further, an insulating layer may be provided as a passivation film (protective film) over the light-emitting element. As the passivation film, silicon nitride, silicon oxide, silicon oxynitride, silicon nitride oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide or aluminum oxide having a nitrogen content higher than the oxygen content, diamond-like carbon (DLC), The insulating film includes a nitrogen-containing carbon film, and a single layer or a combination of the insulating films can be used. Alternatively, a siloxane resin may be used.

Instead of the filler, nitrogen or the like may be sealed by sealing in a nitrogen atmosphere. In the case where light is extracted from the light emitting device through the filler, the filler also needs to have a light-transmitting property. As the filler, for example, a visible light curable, ultraviolet curable, or thermosetting epoxy resin may be used. The filler can be dropped in a liquid state and filled in the light emitting device. When a hygroscopic substance such as a desiccant is used as the filler, or a hygroscopic substance is added to the filler, a further water absorption effect can be obtained and deterioration of the element can be prevented.

Moreover, you may make it cut off the reflected light of the light which injects from the outside using a phase difference plate or a polarizing plate. An insulating layer serving as a partition wall may be colored and used as a black matrix. This partition wall can be formed by a droplet discharge method, and carbon black or the like may be mixed with a resin material such as polyimide, or may be a laminate thereof. A different material may be discharged to the same region a plurality of times by a droplet discharge method to form a partition wall. As the retardation plate, a λ / 4 plate or a λ / 2 plate may be used and designed so that light can be controlled. The structure is, in order, an element substrate, a light emitting element, a sealing substrate (sealing material), a retardation plate (λ / 4, λ / 2), and a polarizing plate, and light emitted from the light emitting element passes through them. Radiated to the outside through the polarizing plate. The retardation plate and the polarizing plate may be installed on the side from which light is emitted, and may be installed on both as long as the light emitting device is a dual emission type that emits light from both sides. Further, an antireflection film may be provided outside the polarizing plate. Thereby, it is possible to display a higher-definition and precise image.

In this embodiment mode, the circuit is formed as described above. However, the present invention is not limited to this, and an IC chip may be mounted as a peripheral driver circuit by the above-described COG method or TAB method. Further, the gate line driver circuit and the source line driver circuit may be plural or singular.

In the light emitting device of the present invention, the screen display driving method is not particularly limited, and for example, a dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used. Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. The video signal input to the source line of the light-emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be designed in accordance with the video signal as appropriate.

The light emitting layer may be configured to perform color display by forming light emitting layers having different emission wavelength bands for each pixel. Typically, a light emitting layer corresponding to each color of R (red), G (green), and B (blue) is formed. In this case as well, it is possible to improve color purity and prevent mirroring of the pixel region (reflection) by providing a filter that transmits light in the emission wavelength band on the light emission side of the pixel. Can do. By providing a filter, loss of light emitted from the light emitting layer can be eliminated. Furthermore, it is possible to reduce a change in color tone that occurs when the pixel region (display screen) is viewed obliquely.

By using the present invention, a thin film with a fine pattern can be formed on a deposition target substrate without providing a mask between the material and the deposition target substrate. As in this embodiment mode, a light-emitting element can be formed using such a deposition method, so that a high-definition light-emitting device can be manufactured.

This embodiment mode can be combined with any of Embodiment Modes 1 to 4 as appropriate.

(Embodiment 7)
By applying the present invention, light-emitting devices having various display functions can be manufactured. That is, the present invention can be applied to various electronic devices in which a light emitting device having such a display function is incorporated in a display portion.

As such an electronic apparatus according to the present invention, a television device (also simply referred to as a television or a television receiver), a camera such as a digital camera or a digital video camera, or a mobile phone device (also simply referred to as a mobile phone or a mobile phone). , Portable information terminals such as PDAs, portable game machines, computer monitors, computers, sound reproduction devices such as car audio, and image reproduction devices equipped with recording media such as home game machines (specifically, Digital Versatile Disc) (DVD)). Further, the present invention can be applied to any gaming machine having a light emitting device such as a pachinko machine, a slot machine, a pinball machine, and a large game machine. Specific examples thereof will be described with reference to FIGS.

The applicable range of the light-emitting device of the present invention is so wide that the light-emitting device can be applied to electronic devices in various fields. Since the film formation method described in Embodiment 1 of the present invention is used, a high-quality electronic device having a large display portion or a lighting portion can be provided.

A portable information terminal device illustrated in FIG. 15A includes a main body 9201, a display portion 9202, and the like. The light emitting device of the present invention can be applied to the display portion 9202. As a result, a high-quality portable information terminal device can be provided.

A digital video camera shown in FIG. 15B includes a display portion 9701, a display portion 9702, and the like. The light emitting device of the present invention can be applied to the display portion 9701. As a result, a high-quality digital video camera can be provided.

A cellular phone shown in FIG. 15C includes a main body 9101, a display portion 9102, and the like. The light emitting device of the present invention can be applied to the display portion 9102. As a result, a high-quality mobile phone can be provided.

FIG. 17 shows an example of a mobile phone to which the present invention is applied, and shows an example different from the mobile phone shown in FIG. 17A is a front view, FIG. 17B is a rear view, and FIG. 17C is a development view of the mobile phone of FIG. The mobile phone is a so-called smartphone that has both functions of a telephone and a portable information terminal, has a built-in computer, and can perform various data processing in addition to voice calls.

The mobile phone is composed of two housings 8001 and 8002. A housing 8001 is provided with a display portion 8101, a speaker 8102, a microphone 8103, operation keys 8104, a pointing device 8105, a camera lens 8106, an external connection terminal 8107, and the like. The housing 8002 includes a keyboard 8201, an external memory slot, and the like. 8202, a camera lens 8203, a light 8204, an earphone terminal 8008, and the like. An antenna is incorporated in the housing 8001.

In addition to the above structure, a non-contact IC chip, a small recording device, or the like may be incorporated.

In the display portion 8101 in which the light-emitting device described in any of the above embodiments can be incorporated, the display direction can be appropriately changed depending on a usage pattern. Since the camera lens 8106 is provided on the same surface as the display portion 8101, a videophone can be used. Further, a still image and a moving image can be taken with the camera lens 8203 and the light 8204 using the display portion 8101 as a viewfinder. The speaker 8102 and the microphone 8103 can be used for videophone calls, recording and playing sound, and the like as well as voice calls. With the operation keys 8104, making and receiving calls, inputting simple information such as e-mails, scrolling the screen, moving the cursor, and the like are possible. Further, the housings 8001 and 8002 which overlap with each other illustrated in FIG. 17A can be slid and developed as illustrated in FIG. 17C, so that the portable information terminal can be used. In this case, smooth operation can be performed using the keyboard 8201 and the pointing device 8105. The external connection terminal 8107 can be connected to an AC adapter and various types of cables such as a USB cable, and charging and data communication with a computer or the like are possible. Further, a recording medium can be inserted into the external memory slot 8202 to cope with storing and moving a larger amount of data.

In addition to the above functions, an infrared communication function, a television reception function, or the like may be provided.

Since the light-emitting device of the present invention can be applied to the display portion 8101, a high-quality mobile phone can be provided.

A portable computer illustrated in FIG. 15D includes a main body 9401, a display portion 9402, and the like. The light emitting device of the present invention can be applied to the display portion 9402. As a result, a high-quality portable computer can be provided.

The light-emitting device to which the present invention is applied can also be used as a small desk lamp or a large indoor lighting device. FIG. 15E illustrates a table lamp, which includes a lighting unit 9501, an umbrella 9502, a variable arm 9503, a column 9504, a table 9505, and a power source 9506. It is manufactured by using the light emitting device of the present invention for the lighting portion 9501. The lighting fixture includes a ceiling-fixed lighting fixture or a wall-mounted lighting fixture. The present invention can also provide a large lighting fixture.

Furthermore, the light-emitting device of the present invention can be used as a backlight of a liquid crystal display device. Since the light-emitting device of the present invention is a surface-emitting illumination device and can have a large area, the backlight can have a large area and a liquid crystal display device can have a large area. Further, since the light-emitting device of the present invention is thin, the liquid crystal display device can be thinned.

A portable television device illustrated in FIG. 15F includes a main body 9301, a display portion 9302, and the like. The light emitting device of the present invention can be applied to the display portion 9302. As a result, a high-quality portable television device can be provided. In addition, the present invention can be applied to a wide variety of television devices, from a small one mounted on a portable terminal such as a cellular phone to a medium-sized one that can be carried and a large one (for example, 40 inches or more). The light emitting device can be applied.

FIG. 16A illustrates a television device having a large display portion. A main screen 2003 is formed by the light-emitting device of the present invention, and a speaker portion 2009, operation switches, and the like are provided as other accessory equipment. In this manner, a television device can be completed.

As shown in FIG. 16A, a display panel 2002 using a light-emitting element is incorporated in a housing 2001, and reception of general television broadcasts by a receiver 2005, as well as wired or wireless via a modem 2004. By connecting to a communication network, information communication in one direction (from the sender to the receiver) or in both directions (between the sender and the receiver or between the receivers) can be performed. The television device can be operated by a switch incorporated in the housing or a separate remote controller 2006, and this remote controller is also provided with a display unit 2007 for displaying information to be output. Also good.

In addition, the television device may have a configuration in which a sub screen 2008 is formed using the second display panel in addition to the main screen 2003 to display channels, volume, and the like.

FIG. 16B illustrates a television device having a large display portion of 20 to 80 inches, for example, which includes a housing 2010, a display portion 2011, a remote control device 2012 that is an operation portion, a speaker portion 2013, and the like. The present invention is applied to manufacture of the display portion 2011. By applying the present invention, a large-sized and high-quality television device can be provided. The television device in FIG. 16B is a wall-hanging type and does not require a large installation space.

Of course, the present invention can be applied to various uses as a display medium having a large area such as an information display board at a railway station or airport, or an advertisement display board in a street.

This embodiment mode can be combined with any of Embodiment Modes 1 to 6 as appropriate.

Claims (4)

A reflective layer having an opening is formed on the substrate,
Forming a translucent first heat insulating layer on the substrate and the reflective layer;
Forming a light-absorbing layer on the first heat-insulating layer at a position not overlapping the reflective layer;
Forming a second heat insulating layer on the first heat insulating layer and overlapping the reflective layer;
A material layer is formed on the light absorption layer and the second heat insulating layer by a wet method using a liquid composition containing a film material to produce a film formation substrate.
The film formation substrate and the film formation substrate are arranged so that the material layer formation surface of the film formation substrate faces the film formation surface of the film formation substrate,
Included in the material layer on the light absorption layer irradiated with the laser light by passing the substrate, the opening of the reflection layer, and the first heat insulation layer to irradiate the light absorption layer with the laser light A film forming method for forming a material to be formed on the film formation substrate. 2. The film forming method according to claim 1 , wherein a laser beam having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less is used as the laser beam. 2. The material according to claim 1 , wherein the first heat-insulating layer and the second heat-insulating layer have a transmittance of 60% or more with respect to the laser beam and a thermal conductivity of the material used for the reflective layer and the light-absorbing layer. A film forming method, wherein the film is formed using a material smaller than conductivity. In any one of claims 1 to 3, the film forming method characterized by forming a line-shaped irradiation surface with the laser beam.

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