JP5089037B2 - Method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device, and in particular, a method for manufacturing a semiconductor device by peeling an element formation layer from a support substrate using a release layer provided between a support substrate and an element formation layer. About.

  In recent years, the need for RFID (Radio Frequency Identification) tags that can exchange data in a contactless manner and cards with RFID tags has increased in all fields that require automatic recognition, such as management of securities and products. Yes. A card equipped with an RFID tag reads and writes data without contact with an external device via a loop antenna inside the card. In addition, since a card equipped with an RFID tag has a larger storage capacity and superior security compared to a magnetic card that records data by a magnetic recording method, a form that can be used in various fields has recently been proposed. Yes.

  In general, an RFID tag includes an antenna and an IC chip, and the IC chip is formed by an element formation layer having a transistor or the like provided on a silicon wafer. However, in recent years, further cost reduction has been demanded, and technical development of an RFID tag using an element formation layer provided on a glass substrate or the like has been advanced. In such a technique, the element formation layer provided on the glass substrate needs to be separated from the glass substrate which is the support substrate after completion. Various techniques have heretofore been considered as a method for separating the element formation layer provided on the support substrate.

  For example, there are a method of thinning a support substrate by grinding and polishing to take out an element formation layer, a method of removing the support substrate by a chemical reaction, or a method of peeling the support substrate and the element formation layer. For example, as a method of peeling an element formation layer provided on a supporting substrate, an isolation layer made of amorphous silicon (or polysilicon) is provided, and laser light is irradiated through the substrate to form amorphous silicon. There is a technique in which a support substrate is separated by generating voids by releasing contained hydrogen (see Patent Document 1). In addition, a separation layer containing silicon is provided between the element formation layer and the support substrate, and the separation layer is removed using a gas containing halogen fluoride, so that the element formation layer is separated from the support substrate. There is a technology (see Patent Document 2). As described above, there are many methods for separating the element formation layer provided on the support substrate.

Japanese Patent Laid-Open No. 10-125929 JP-A-8-254686

  However, in the method of removing the support substrate by grinding, polishing, or melting, there is a problem of damage or contamination due to physical force such as stress. Moreover, in these methods, it is very difficult to reuse the substrate once used, and there is a problem that the cost increases.

  Moreover, when the element formation layer provided on the support substrate is separated using the release layer provided between the support substrate and the element formation layer, the property of the release layer is important. That is, in the case where the supporting substrate and the element formation layer are separated by removing the release layer, the time required for removing the release layer can be selected by selecting a material used for the release layer and an etching agent for removing the release layer. Is affected. In addition, when the support substrate and the element formation layer are separated by a physical force via the release layer, the adhesion between the support substrate and the element formation layer formed via the release layer by the material used for the release layer Is affected. Further, in the case where an element formation layer including a thin film transistor or the like is provided over the separation layer, depending on the material and film quality of the separation layer, the characteristics of the transistor may be affected and the reliability of the semiconductor device may be reduced.

  In view of the above problems, an object of the present invention is to provide a method for manufacturing a semiconductor device with low cost and high reliability.

  In the method for manufacturing a semiconductor device in the present invention, a metal film is formed on a substrate, a metal oxide film is formed on the surface of the metal film by performing plasma treatment on the metal film, and an element formation layer is formed on the metal oxide film. Then, an insulating film is formed to cover the element forming layer, an opening is formed in the insulating film and the element forming layer, an etching agent is introduced into the opening to remove the metal film and the metal oxide film, and the element is formed from the substrate. It is characterized by peeling the layers. In addition, the element formation layer in the present invention includes at least a thin film transistor (TFT). With the thin film transistor, a variety of integrated circuits such as a central processing unit (CPU), a memory, or a microprocessor can be provided. In addition to the thin film transistor, the element formation layer may have an antenna. For example, an element formation layer formed of a thin film transistor operates using an alternating voltage generated by an antenna and can transmit to a reader / writer by modulating the alternating voltage applied to the antenna. . Note that the antenna may be formed together with the thin film transistor, or may be formed separately from the thin film transistor so as to be electrically connected later.

  As another method for manufacturing a semiconductor device in the present invention, a metal film is formed on a substrate, a metal oxide film is formed on the surface of the metal film by performing plasma treatment on the metal film, and an element formation layer is formed on the metal oxide film. Forming an insulating film covering the element forming layer, forming an opening in the insulating film and the element forming layer, and introducing an etchant into the opening to leave at least a part of the metal film and the metal oxide film And the element formation layer is peeled off from the substrate by physical means (physical force). The physical means is a means recognized not by chemistry but by physics. Specifically, it means a mechanical means or a mechanical means having a process that can be applied to the laws of mechanics. It refers to a means of changing energy (mechanical energy). In other words, peeling using physical means means, for example, by applying an impact (stress) from the outside using a human hand, a wind pressure of a gas blown from a nozzle, a load using an ultrasonic wave or a wedge-shaped member, or the like. Say to peel. Note that when the adhesion between the substrate formed through the peeling layer (here, the metal film and the metal oxide film) and the element formation layer is weak, the element formation layer is separated from the substrate without removing the peeling layer. It is also possible.

  As another method for manufacturing a semiconductor device in the present invention, in the above structure, a metal oxide film may be formed on the surface of the metal film by performing heat treatment on the metal film formed over the substrate.

  As another method for manufacturing a semiconductor device in the present invention, a metal oxide film is formed on a substrate by a sputtering method in an oxygen atmosphere, an element formation layer is formed on the metal oxide film, and the element formation layer is covered and insulated. A film is formed, an opening is formed in the insulating film and the element formation layer, an etching agent is introduced into the opening to remove the metal oxide film, and the element formation layer is peeled from the substrate. In this case, it is not always necessary to remove the metal oxide film, and after removing a part of the metal oxide film, the element formation layer may be peeled off from the substrate using physical means. Alternatively, the metal oxide film may be formed using a method other than sputtering such as CVD. The metal oxide film may be formed on a substrate such as glass or may be formed on a metal film.

  By using the present invention, a semiconductor device provided over a flexible substrate can be provided at low cost. Further, by using the method for manufacturing a semiconductor device of the present invention, a highly reliable semiconductor device can be obtained.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals are used in common in different drawings.

(Embodiment 1)
In this embodiment, a structural example of a method for manufacturing a semiconductor device of the present invention will be described with reference to drawings.

  First, the metal film 11 is formed on the surface of the substrate 10 (FIG. 1A). The metal film 11 may be formed as a single layer or may be formed by laminating a plurality of layers. For example, a tungsten (W) film is formed using a sputtering method. Note that an insulating film may be provided over the substrate 10 before the metal film 11 is formed. In particular, when there is a concern about contamination from the substrate, an insulating film is preferably formed between the substrate 10 and the metal film 11.

  Next, plasma treatment is performed on the metal film 11 in an oxygen atmosphere to form a metal oxide film 12 on the surface of the metal film 11 (FIG. 1B). The metal oxide film 12 is formed of a metal oxide of the metal constituting the metal film 11. For example, when a tungsten film is used as the metal film 11, a tungsten oxide film is formed as the metal oxide 12 on the surface of the tungsten film by performing plasma treatment. In the present embodiment, the layer formed of the metal film 11 and the metal oxide film 12 is referred to as a peeling layer 19.

  Next, an insulating film 13 is formed over the metal oxide film 12 (FIG. 1C). The insulating film 13 may be provided as a single layer, or a plurality of films may be stacked.

  Next, a layer 14 (hereinafter also referred to as a TFT layer 14) composed of a thin film transistor or the like is formed on the insulating film 13. In the present embodiment, a layer formed of the insulating film 13 and the TFT layer 14 is referred to as an element formation layer 30. Subsequently, an insulating film 15 is formed as a protective film so as to cover the element formation layer 30 (FIG. 1D). The insulating film 15 is preferably formed so as to cover the side surface of the element formation layer 30. Here, the insulating film 15 is provided over the entire surface so as to cover the element formation layer 30, but it is not necessarily provided over the entire surface and may be selectively provided.

  Next, the opening 16 is formed in the insulating film 15 and the element formation layer 30, and the peeling layer 19 is exposed (FIG. 1E). The opening 16 is preferably provided in a region avoiding the thin film transistor or the like constituting the element forming layer 30 or in an end portion of the substrate 10. The opening 16 can be formed by laser light irradiation or grinding and cutting the end face of the sample.

  Next, an etchant is introduced from the opening 16 to selectively remove the peeling layer 19 (FIG. 2A). The release layer 19 may be completely removed or may be removed so as to leave a part of the release layer. By leaving a part of the release layer 19, the element formation layer 30 can be held on the substrate 10 even after the release layer is removed. Further, by performing the treatment without removing all of the release layer 19, the consumption of the etching agent can be reduced and the treatment time can be shortened, so that the cost and the efficiency can be improved.

  Next, a first sheet material 17 is provided over the insulating film 15 (FIG. 2B). The first sheet material 17 has adhesiveness on at least one surface, and is provided by bonding the insulating film 15 formed on the element formation layer 30 and the first sheet material 17 together.

  Next, the element formation layer 30 is peeled from the substrate 10 (FIG. 2C). When a part of the peeling layer 19 remains between the substrate 10 and the element formation layer 30, the element formation layer 30 is peeled from the substrate 10 using physical means. In this case, since the adhesiveness between the substrate 10 and the element formation layer formed through the release layer 19 is reduced by using the release layer 19 provided by the above-described method, physical means are used. In addition, the element formation layer 30 can be easily peeled off from the substrate 10. If the adhesion between the substrate 10 formed via the release layer 19 and the element formation layer 30 is weak, the release layer is not removed using an etchant, and the opening 16 is formed to remove the release layer 19. It is also possible to separate the element formation layer 30 from the substrate 10 by physical force after the exposure.

  Here, an example is shown in which the substrate 10 and the element formation layer 30 are separated at the interface between the metal oxide film 12 and the insulating film 13 included in the element formation layer 30. 30 and the conditions such as stress applied during peeling, the interface between the metal film 11 and the metal oxide film 12, the interface between the substrate 10 and the metal film 11, the inside of the metal oxide film 12, the inside of the metal film 11 In some cases, it may peel off.

  Next, the second sheet material 18 is provided on the surface of the element formation layer 30 peeled from the substrate 10 (FIG. 2D). The second sheet material 18 is provided by adhering to the element forming layer 30 and then performing one or both of heat treatment and pressure treatment. By providing the second sheet material, it is possible to reinforce the strength of the element formation layer 30 and prevent intrusion of moisture, contaminants, and the like. In addition, you may seal by providing the sheet material similar to a 2nd sheet material also on the other side in which the 2nd sheet material of the element formation layer was provided. In this case, when it is desired to form the semiconductor device thinner, it is preferable to provide a new sheet material and seal after removing the first sheet material.

  Through the above steps, a flexible semiconductor device can be manufactured. Hereinafter, materials and the like in each process will be specifically described.

  The substrate 10 may be a glass substrate, a quartz substrate, a metal substrate or a stainless steel substrate with an insulating film formed on one surface, a heat-resistant plastic substrate that can withstand the processing temperature in this step, or the like. If such a substrate is used, there is no significant limitation on the area or shape thereof. For example, if the substrate 10 is a rectangle having one side of 1 meter or more and a rectangular shape, the productivity is remarkably improved. be able to. Such an advantage is a great advantage compared to the case of using a circular silicon substrate. In this embodiment mode, the peeled substrate 10 can be reused, so that a semiconductor device can be manufactured at lower cost. For example, even when a high-cost quartz substrate is used, there is an advantage that a semiconductor device can be manufactured at low cost by repeatedly using the quartz substrate.

  The metal film 11 includes tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), A film made of an element selected from ruthenium (Ru), rhodium (Rh), lead (Pb), osmium (Os), iridium (Ir), or an alloy material or compound material containing the element as a main component, It is formed by stacking. Further, these materials can be formed by using known means (various CVD methods such as sputtering and plasma CVD).

  The insulating film provided between the substrate 10 and the metal film 11 includes silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), and silicon nitride oxide (SiNxOy) (x> y). A single-layer structure of an insulating film containing oxygen or nitrogen, such as these, or a stacked structure thereof can be used. These insulating films can be formed using known means (various CVD methods such as sputtering and plasma CVD).

The metal oxide film 12 is formed on the surface of the metal film 11 by performing plasma treatment on the surface of the metal film 11 in an oxygen atmosphere. For example, when a tungsten film formed by a sputtering method is provided as the metal film 11, a metal oxide film made of tungsten oxide can be formed on the tungsten film surface by performing plasma treatment on the tungsten film. In this case, the oxide of tungsten is represented by WOx, X is 2 to 3, X is 2 (WO ₂ ), X is 2.5 (W ₂ O ₅ ), and X is In the case of 2.75 (W ₄ O ₁₁ ), X is 3 (WO ₃ ), and the like. In forming the tungsten oxide, there is no particular limitation on the value of X mentioned above, and it is preferable to determine which oxide is formed based on the etching rate or the like. In addition to the metal oxide film, metal nitride or metal oxynitride may be used. In this case, plasma treatment may be performed on the metal film in a nitrogen atmosphere, a nitrogen and oxygen atmosphere, or an N ₂ O atmosphere.

  The insulating film 13 is formed by a known means (sputtering method, plasma CVD method or the like) using silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) ( It can be formed using a single layer structure of an insulating film containing oxygen or nitrogen such as x> y) or a stacked structure thereof. For example, in the case where the insulating film 13 is provided with a two-layer structure, a silicon nitride oxide film may be formed as a first insulating film and a silicon oxynitride film may be formed as a second insulating film. When the insulating film 13 is provided in a three-layer structure, a silicon oxynitride film is formed as the first insulating film, a silicon nitride oxide film is formed as the second insulating film, and the third insulating film is formed. A silicon oxynitride film is preferably formed.

  The TFT layer 14 includes at least a thin film transistor (TFT). The TFT layer 14 can be provided with various integrated circuits such as a CPU, a memory, or a microprocessor by the thin film transistor. Further, the TFT layer 14 may take a form having an antenna in addition to the thin film transistor. For example, an integrated circuit including a thin film transistor operates using an alternating voltage generated by an antenna, and can transmit to a reader / writer by modulating the alternating voltage applied to the antenna. Note that the antenna may be formed together with the thin film transistor, or may be formed separately from the thin film transistor and electrically connected later.

  As the thin film transistor, an amorphous semiconductor or a crystalline semiconductor can be used. However, in the case where a thin film transistor with higher characteristics is used, it is preferable to use a crystalline semiconductor to provide the thin film transistor. In this case, an amorphous semiconductor film is formed on the insulating film 13 by a known means (sputtering method, LPCVD method, plasma CVD method, etc.), and then the amorphous semiconductor film is formed by a known crystallization method (laser crystal). , A thermal crystallization method using an RTA or furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, a method combining a thermal crystallization method using a metal element that promotes crystallization and a laser crystallization method Etc.) to form a crystalline semiconductor film.

  Further, the semiconductor film constituting the thin film transistor may have any structure, for example, an impurity region (including a source region, a drain region, and an LDD region) may be formed. The thin film transistor may be a p-channel type, an n-channel type, or a CMOS circuit. In addition, an insulating film (side wall) may be formed so as to be in contact with a side surface of the gate electrode provided above the semiconductor film, and a silicide layer such as nickel, molybdenum, or cobalt is formed on the source region, the drain region, and the gate electrode. May be formed.

  The insulating film 15 is formed of a film containing carbon such as DLC (diamond-like carbon), a film containing silicon nitrogen, a film containing silicon nitrogen oxide, a film made of a resin material such as epoxy, or other organic materials. Note that the insulating film 15 can be formed using a known means (various CVD methods such as a sputtering method and a plasma CVD method, a spin coating method, a droplet discharge method, or a printing method).

As the etching agent, a gas or liquid containing halogen fluoride or an interhalogen compound such as chlorine trifluoride gas can be used. In addition, CF ₄ , SF ₆ , NF ₃ , F _{2 and the} like can be used.

  As the first sheet material 17, a flexible film can be used, and a surface having an adhesive is provided on at least one surface. For example, a sheet material in which an adhesive is provided on a base film used as a base material such as polyester can be used. As the adhesive, a material made of a resin material containing an acrylic resin or the like or a synthetic rubber material can be used.

  The second sheet material 18 can use a flexible film, for example, a film made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, paper made of a fibrous material, or a base film. A laminated film of an adhesive synthetic resin film (acrylic synthetic resin, epoxy synthetic resin, etc.) and the like (polyester, polyamide, inorganic vapor deposition film, paper, etc.) can be used. In addition, the film is subjected to heat treatment and pressure treatment by thermocompression bonding, and when performing heat treatment and pressure treatment, the adhesive layer provided on the outermost surface of the film, Alternatively, a layer (not an adhesive layer) provided in the outermost layer is melted by heat treatment and bonded by pressure. When the element forming layer is sealed with the first sheet material 17 and the second sheet material 18, the first sheet material may be sealed with the same material.

  As described above, according to this embodiment mode, after providing an element formation layer over a rigid substrate such as glass, the element formation layer is peeled from the substrate, whereby a flexible semiconductor device is manufactured. can do. Further, by using the method described in this embodiment, a peeling layer is formed and peeling is performed, whereby a highly reliable semiconductor device can be manufactured at low cost.

(Embodiment 2)
In this embodiment, a method for manufacturing a semiconductor device, which is different from that in the above embodiment, will be described with reference to drawings.

  First, the metal film 11 is formed on the surface of the substrate 10 (FIG. 4A). The metal film 11 may be formed as a single layer or may be formed by laminating a plurality of layers. For example, a tungsten (W) film is formed using a sputtering method. Note that an insulating film may be provided over the substrate 10 before the metal film 11 is formed. In particular, when there is a concern about contamination from the substrate, an insulating film is preferably formed between the substrate 10 and the metal film 11.

  Next, in the present embodiment, the metal film 11 is oxidized by performing heat treatment using an RTA, a furnace annealing furnace, or the like, and the metal oxide film 22 is formed on the surface of the metal film 11. Here, an example in which heat treatment is performed by RTA will be described. (FIG. 4B). FIG. 4B shows an apparatus for heating a sample, which includes a chamber 70, a support base 71, a heat source body 72, a heat insulating material 73, and the like. As the heat source 72, a heating wire such as a nickel chrome wire (nichrome wire) or an iron chrome wire, or a lamp such as an infrared lamp or a halogen lamp is used.

First, the substrate 10 provided with the metal film 11 is placed on the support base 71 in the chamber 70. Then, the metal film 11 is heat-treated in an oxygen atmosphere by heating using the heat source 72, thereby forming the metal oxide film 22 on the surface of the metal film 11. The film thickness of the metal oxide film 22 can be adjusted by controlling the temperature and time of the heat treatment. Alternatively, the metal nitride film or the metal oxynitride film may be formed by performing heat treatment in a nitrogen atmosphere, an oxygen and nitrogen atmosphere, or an N ₂ O atmosphere.

  Note that the example shown in FIG. 4 is merely an example, and a device such as that may be used as long as the metal film formed on the substrate can be subjected to heat treatment to form a metal oxide film on the surface. . That is, in this embodiment, it is important to form a metal oxide film on the surface of the metal film by performing heat treatment on the metal film formed over the substrate. Further, the substrates may be processed one by one, or a large number of substrates may be processed simultaneously. In particular, when it is desired to process many substrates at once, a batch type furnace annealing furnace can be used.

  After that, a semiconductor device can be manufactured through steps similar to those illustrated in FIGS. 1C to 2D described in the above embodiment.

  Note that this embodiment mode can be freely combined with the above embodiment modes. That is, the materials and formation methods described in the above embodiment modes can be freely combined and used in this embodiment mode.

(Embodiment 3)
In this embodiment, a method for manufacturing a semiconductor device, which is different from that described in the above embodiments, will be described with reference to drawings.

  First, a metal oxide film 31 is formed on the surface of the substrate 10 by sputtering in an oxygen atmosphere (FIG. 5A). For example, a tungsten oxide film (WOx) can be formed on the substrate 10 by performing sputtering using tungsten as a target in an atmosphere of argon and oxygen. In addition to tungsten, molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium ( A film made of an element selected from Ru), rhodium (Rh), lead (Pb), osmium (Os), iridium (Ir), silicon (Si), or an alloy material or compound material containing the element as a main component, A single layer or a stacked layer is formed.

  Next, the insulating film 13 is formed over the metal oxide film 31 (FIG. 5B). The insulating film 13 may be provided as a single layer, or a plurality of films may be stacked.

  Next, a layer 14 (TFT layer 14) composed of a thin film transistor or the like is formed on the insulating film 13. In the present embodiment, the layer formed of the insulating film 13 and the TFT layer 14 is referred to as an element formation layer 30 for convenience. Subsequently, an insulating film 15 is formed as a protective film so as to cover the element formation layer 30 (FIG. 5C). The insulating film 15 is preferably formed so as to cover the side surface of the element formation layer 30. Here, the insulating film 15 is provided over the entire surface so as to cover the element formation layer 30, but it is not necessarily provided over the entire surface and may be selectively provided.

  Next, the opening 16 is formed in the insulating film 15 and the element formation layer 30 to expose the metal oxide film 31 (FIG. 5D). The opening 16 is preferably provided in a region avoiding the thin film transistor or the like constituting the element forming layer 30 or in an end portion of the substrate 10. The opening 16 can be formed by laser light irradiation or grinding and cutting the end face of the sample.

  Next, an etching agent such as halogen fluoride such as chlorine trifluoride gas is introduced from the opening 16 to selectively remove the metal oxide film 31 (FIG. 5E). The metal oxide film 31 may be completely removed or may be removed so as to leave a part. By leaving a part of the metal oxide film 31, the element formation layer 30 can be held on the substrate 10 even after the metal oxide film 31 is removed. Further, by performing the processing without removing all of the metal oxide film 31, the consumption of the etching agent can be reduced and the processing time can be shortened, so that the cost and efficiency can be increased.

  Thereafter, as shown in the above embodiment, the element forming layer 30 can be separated from the substrate 10 by providing the element forming layer 30 with a first sheet material. In the present embodiment, the metal oxide film 31 functions as a release layer.

  In the present embodiment, the metal oxide film 31 is formed by performing sputtering directly on the surface of the substrate 10 in an oxygen atmosphere. However, the metal film is provided on the substrate 10 in advance, and the metal A metal oxide film 31 may be provided on the film. In this case, the metal elements contained in the metal film and the metal oxide film may be different. By laminating and providing a metal film and a metal oxide film having a different metal element, the adhesion between the metal film and the metal oxide film can be controlled and easily peeled off at the time of peeling. . In this case, it is preferable to select a metal element used as a metal film and a metal element used as a metal oxide film in consideration of adhesion.

  Note that this embodiment mode can be freely combined with the above embodiment modes. That is, the materials and formation methods described in the above embodiment modes can be freely combined and used in this embodiment mode.

(Embodiment 4)
In the above embodiment, an example in which a semiconductor device is manufactured by sequentially forming a metal film, a metal oxide film, an insulating film, and an amorphous semiconductor film of a thin film transistor that forms an element formation layer is shown. In this embodiment mode, a case where a conductive film, an insulating film, or a semiconductor film are continuously formed as described above will be described with reference to drawings.

  An example of an apparatus provided with a plurality of chambers is shown in FIG. Note that FIG. 3A is a top view of a structural example of the apparatus (continuous film formation system) described in this embodiment.

  The apparatus shown in FIG. 3A includes a first chamber 111, a second chamber 112, a third chamber 113, a fourth chamber 114, load lock chambers 110 and 115, and a common chamber 120. Each chamber is airtight. Each chamber is provided with a vacuum exhaust pump and an inert gas introduction system.

  The load lock chambers 110 and 115 are rooms for carrying samples (processing substrates) into the system. The first to fourth chambers are chambers for forming a conductive film, an insulating film, or a semiconductor film on the substrate 10, etching, plasma processing, and the like. The common chamber 120 is a sample common chamber 120 arranged in common for the load lock chambers 110 and 115 and the first to fourth chambers. Gate valves 122 to 127 are provided between the common chamber 120, the load lock chambers 110 and 115, and the first chamber 111 to the fourth chamber 114. Note that a robot arm 121 is provided in the common chamber 120, and the processing substrate is carried to each room by the robot arm 121.

  As a specific example, a metal film 11 is formed on the substrate 10 in the first chamber 111, a metal oxide film 12 is formed in the second chamber 112, and an insulating film 13 is formed in the third chamber 113. An example in which an amorphous semiconductor film is formed in the fourth chamber 114 is described.

  First, the substrate 10 is carried into the load lock chamber 110 together with a cassette 128 in which a large number of sheets are stored. After loading the cassette 128, the loading door of the load lock chamber 110 is closed. In this state, the gate valve 122 is opened, and one processing substrate is taken out from the cassette 128 and placed in the common chamber 120 by the robot arm 121. At this time, the alignment of the substrate 10 is performed in the common chamber 120.

  Next, the gate valve 122 is closed, and then the gate valve 124 is opened. Then, the substrate 10 is transferred to the first chamber 111. A metal film 11 is formed on the substrate 10 by performing a film forming process in the first chamber 111. For example, in the first chamber 111, a tungsten (W) film can be formed by a plasma CVD method or a sputtering method using W as a target.

  Next, after forming the metal film 11, the substrate 10 is pulled out to the common chamber 120 by the robot arm 121 and transferred to the second chamber 112. In the second chamber 112, the metal oxide film 12 is formed on the surface of the metal film 11 by performing plasma treatment on the metal film 11 in an oxygen atmosphere. For example, tungsten oxide (WOx) can be formed by performing plasma treatment on the tungsten film in the second chamber 112.

  Next, after forming the metal oxide film 12, the substrate 10 is pulled out to the common chamber 120 by the robot arm 121 and transferred to the third chamber 113. In the third chamber 113, film formation is performed at a temperature of 150 ° C. to 300 ° C. to form the insulating film 13. As the insulating film 13, a single layer film of an insulating film containing oxygen or nitrogen, such as silicon oxide, silicon nitride, silicon oxynitride, or silicon nitride oxide, or a stacked film thereof can be formed. For example, in the chamber 113 of the table 3, a silicon oxynitride film is formed as a first insulating film, a silicon nitride oxide film is formed as a second insulating film, and a third insulating film is formed by plasma CVD. As a result, a silicon oxynitride film can be formed. Note that the present invention is not limited to the plasma CVD method, and may be formed by a sputtering method using a target.

  Next, after forming the insulating film 13, the substrate 10 is pulled out to the common chamber 120 by the robot arm 121 and transferred to the fourth chamber 114. In the fourth chamber 114, film formation is performed at a temperature of 150 ° C. to 300 ° C., and an amorphous semiconductor film is formed by a plasma CVD method. Note that as the amorphous semiconductor film, a microcrystalline semiconductor film, an amorphous germanium film, an amorphous silicon germanium film, a stacked film of these, or the like can be used. Further, the heat treatment for reducing the hydrogen concentration may be omitted by setting the formation temperature of the amorphous semiconductor film to 350 ° C. to 500 ° C. Note that although an example in which the plasma CVD method is used is shown here, the sputtering method using a target may be used.

  As described above, after the amorphous semiconductor film is formed, the substrate 10 is transferred to the load lock chamber 115 by the robot arm 121 and stored in the cassette 129.

  Note that FIG. 3A is just an example, and for example, a conductive film or an insulating film may be formed after the number of chambers is increased and an amorphous semiconductor film is further formed, As shown in Embodiment Mode 2, the metal oxide film 22 may be formed by performing heat treatment in the second chamber 112. Further, as shown in Embodiment Mode 3, the metal oxide film 31 can be formed on the substrate 10 by performing sputtering in the first chamber 111 in an oxygen atmosphere. That is, it can be freely combined with the apparatus shown in FIG. 3A using the steps and materials described in the above embodiment modes. 3A illustrates an example in which the first to fourth chambers 1141 to 114 are single-type chambers, a large number of sheets may be processed at once using a batch-type chamber.

  Next, the case where the structure is different from that in FIG. 3A is described with reference to FIG. Specifically, FIG. 3A illustrates an example in which a plurality of chambers are used to continuously stack layers, but FIG. 3B illustrates a case where continuous vacuum is maintained in one chamber. Shows an example of film formation.

  The apparatus illustrated in FIG. 3B includes load lock chambers 144 and 146, a chamber 145, and a common chamber 150. Each room is provided with a vacuum exhaust pump and an inert gas introduction system. The common chamber 150 is a sample common chamber that is arranged in common with the load lock chambers 144 and 146 and the chamber 145. Gate valves 147 to 149 are provided between the common chamber 150 and the load lock chambers 144 and 146 and the chamber 145. Note that a robot arm 151 is provided in the common chamber 150, and the processing substrate is carried to each room by the robot arm 151.

  As a specific example, an example in which the metal film 11, the metal oxide film 12, the insulating film 13, and the amorphous semiconductor film are formed on the substrate 10 is shown below.

  First, the substrate 10 is carried into the load lock chamber 144 together with the cassette 142 storing a large number of sheets. After loading the cassette 142, the loading door of the load lock chamber 144 is closed. In this state, the gate valve 147 is opened, one processing substrate is taken out from the cassette 142, and placed in the common chamber 150 by the robot arm 151. At this time, the alignment of the substrate 10 is performed in the common chamber 150.

  Next, the gate valve 147 is closed, and then the gate valve 149 is opened. Then, the substrate 10 is transferred to the chamber 145 by the robot arm 151. The chamber 145 includes a plurality of targets, and is formed by sequentially stacking a metal film 11, a metal oxide film 12, an insulating film 13, and an amorphous semiconductor film on the substrate 10 by sequentially switching reaction gases. be able to.

  Thereafter, the substrate 10 is transferred to the load lock chamber 146 by the robot arm 151 and stored in the cassette 143.

  Note that FIG. 3B is just an example, and for example, a conductive film or an insulating film may be formed after the formation of the amorphous semiconductor film, or as shown in Embodiment Mode 2 above. As described above, the metal oxide film 22 may be formed by performing heat treatment. Further, as shown in the third embodiment, the metal oxide film 31 can be formed on the substrate 10 by performing sputtering in an oxygen atmosphere. That is, it can be freely combined with the apparatus shown in FIG. 3B by using the steps and materials described in the above embodiment modes. 3B illustrates an example in which the chamber 145 uses a single-type chamber, a configuration in which a large number of sheets are processed at once using a batch-type chamber may be used.

  By using the apparatus shown in FIG. 3B, a film is continuously formed in the same chamber, so that contamination or the like that occurs when the substrate is transferred can be prevented.

  By using the apparatus described in this embodiment mode, a conductive film, an insulating film, or a semiconductor film can be continuously formed without being exposed to the atmosphere even once. Therefore, it is possible to prevent contamination from being mixed and improve production efficiency.

(Embodiment 5)
In this embodiment, a method for manufacturing a semiconductor device of the present invention including a thin film transistor, a memory element, and an antenna will be described with reference to drawings.

  First, the separation layer 702 is formed over one surface of the substrate 701 (FIG. 6A).

  As the substrate 701, a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate with an insulating film formed on one surface, a heat-resistant plastic substrate that can withstand the processing temperature in this step, or the like may be used. With such a substrate 701, there is no significant limitation on the area and shape thereof. For example, if the substrate 701 is a rectangular substrate having a side of 1 meter or more and a rectangular shape, productivity is remarkably improved. Can be made. Such an advantage is a great advantage compared to the case of using a circular silicon substrate. Note that in this step, the peeling layer 702 is provided over the entire surface of the substrate 701. However, after being provided with a peeling layer over the entire surface of the substrate 701, etching is performed selectively by photolithography as necessary. May be. In addition, although the separation layer 702 is formed so as to be in contact with the substrate 701, an insulating film serving as a base is formed so as to be in contact with the substrate 701 as necessary, and the separation layer 702 is formed so as to be in contact with the insulation film. May be.

  The peeling layer 702 is formed of a metal film and the metal oxide film. The metal film is formed by sputtering, plasma CVD, or the like using tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium ( An element selected from Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), lead (Pb), osmium (Os), iridium (Ir), or an alloy material or compound material containing the element as a main component These layers are formed as a single layer or stacked layers. The metal oxide film is formed on the surface of the metal film by performing plasma treatment on the metal film in an oxygen atmosphere or by performing heat treatment on the metal film in an oxygen atmosphere. In addition to the metal oxide film, a metal oxynitride film may be used.

  In the case where the metal film has a single-layer structure, for example, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is formed. Then, a layer containing tungsten oxide or oxynitride, a layer containing molybdenum oxide or oxynitride, or a layer containing oxide or oxynitride of a mixture of tungsten and molybdenum is formed on the surface of the metal film. . Note that the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

  Alternatively, after forming a metal film over the substrate 701 as the separation layer 702, a metal oxide film may be formed by a sputtering method using the material of the metal film as a target in an oxygen atmosphere. In this case, the metal film and the metal oxide film can be formed using different metal elements. Note that a metal oxide film may be directly formed over the substrate 701 and used as the separation layer 702.

  Next, an insulating film 703 serving as a base is formed so as to cover the separation layer 702.

  As the insulating film 703, a film containing a silicon oxide or a silicon nitride is formed as a single layer or a stacked layer by a known means (such as a sputtering method or a plasma CVD method). In the case where the base insulating film has a two-layer structure, for example, a silicon nitride oxide film may be formed as the first layer and a silicon oxynitride film may be formed as the second layer. When the base insulating film has a three-layer structure, a silicon oxide film is formed as the first insulating film, a silicon nitride oxide film is formed as the second insulating film, and oxynitriding is performed as the third insulating film. A silicon film is preferably formed. Alternatively, a silicon oxynitride film may be formed as the first insulating film, a silicon nitride oxide film may be formed as the second insulating film, and a silicon oxynitride film may be formed as the third insulating film. The insulating film serving as a base functions as a blocking film that prevents impurities from entering from the substrate 701.

  Next, an amorphous semiconductor film 704 (eg, a film containing amorphous silicon) is formed over the insulating film 703. The amorphous semiconductor film 704 is formed with a thickness of 25 to 200 nm (preferably 30 to 150 nm) by a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like). Subsequently, the amorphous semiconductor film 704 is subjected to a known crystallization method (laser crystallization method, thermal crystallization method using an RTA or furnace annealing furnace, thermal crystallization method using a metal element that promotes crystallization, or crystallization. A crystalline semiconductor film is formed by crystallization by a combination of a thermal crystallization method using a promoting metal element and a laser crystallization method). Thereafter, the obtained crystalline semiconductor film is etched into a desired shape to form crystalline semiconductor films 706 to 710 (FIG. 6B). Note that the separation layer 702, the insulating film 703, and the amorphous semiconductor film 704 can be formed successively as shown in FIG.

  An example of a manufacturing process of the crystalline semiconductor films 706 to 710 will be briefly described below. First, an amorphous semiconductor film having a thickness of 66 nm is formed using a plasma CVD method. Next, after a solution containing nickel, which is a metal element that promotes crystallization, is held on the amorphous semiconductor film, the amorphous semiconductor film is subjected to dehydrogenation treatment (500 ° C., 1 hour), heat Crystallization treatment (550 ° C., 4 hours) is performed to form a crystalline semiconductor film. Thereafter, laser light is irradiated as necessary, and crystalline semiconductor films 706 to 710 are formed by using a photolithography method.

In the case of forming a crystalline semiconductor film by a laser crystallization method, a continuous wave or pulsed gas laser or solid state laser is used. As the gas laser, excimer laser, YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, glass laser, ruby laser, Ti: sapphire laser, or the like is used. As the solid-state laser, a laser using a crystal such as YAG, YVO ₄ , YLF, or YAlO ₃ doped with Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm is used. In particular, a crystal having a large grain size can be obtained by irradiating a fundamental wave of a continuous wave laser and a second to fourth harmonic laser of the fundamental wave. For example, a second harmonic (532 nm) or a third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. The continuous wave fundamental laser beam and the continuous wave harmonic laser beam may be irradiated, or the continuous wave fundamental laser beam and the pulsed harmonic laser beam may be irradiated. You may do it. By irradiating a plurality of laser beams, energy can be supplemented. Also, it is a pulse oscillation type laser that oscillates the laser light at an oscillation frequency that can be irradiated with the laser light of the next pulse after the semiconductor film is melted by the laser light and solidifies in the scanning direction. Crystal grains grown continuously can be obtained. That is, it is possible to use a pulsed laser in which the lower limit of the oscillation frequency is set so that the period of pulse oscillation is shorter than the time until the semiconductor film is completely solidified after being melted. As such a laser, a pulsed laser beam having an oscillation frequency of 10 MHz or more may be used.

  In addition, when an amorphous semiconductor film is crystallized using a metal element that promotes crystallization, it is possible to perform crystallization at a low temperature for a short time, and the crystal orientation is aligned. Remains in the crystalline semiconductor film, so that the off-current increases and the characteristics are not stable. Therefore, an amorphous semiconductor film functioning as a gettering site is preferably formed over the crystalline semiconductor film. Since the amorphous semiconductor film serving as a gettering site needs to contain an impurity element such as phosphorus or argon, it is preferably formed by a sputtering method which can contain argon at a high concentration. Then, heat treatment (RTA method or thermal annealing using a furnace annealing furnace) is performed to diffuse the metal element in the amorphous semiconductor film, and then the amorphous semiconductor film containing the metal element is removed. To do. Then, the content of the metal element in the crystalline semiconductor film can be reduced or removed.

  Next, a gate insulating film 705 covering the crystalline semiconductor films 706 to 710 is formed. The gate insulating film 705 is formed as a single layer or a stack of films containing a silicon oxide or a silicon nitride by a known means (plasma CVD method or sputtering method). Specifically, a film containing silicon oxide, a film containing silicon oxynitride, or a film containing silicon nitride oxide is formed as a single layer or a stacked layer.

  Next, a first conductive film and a second conductive film are stacked over the gate insulating film 705. The first conductive film is formed with a thickness of 20 to 100 nm by a known means (plasma CVD method or sputtering method). The second conductive film is formed with a thickness of 100 to 400 nm by a known means. The first conductive film and the second conductive film include tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium ( Nb) or the like or an alloy material or a compound material containing these elements as a main component. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus is used. Examples of the combination of the first conductive film and the second conductive film include a tantalum nitride film and a tungsten film, a tungsten nitride film and a tungsten film, a molybdenum nitride film and a molybdenum film, and the like. Since tungsten and tantalum nitride have high heat resistance, heat treatment for thermal activation can be performed after the first conductive film and the second conductive film are formed. In the case of a three-layer structure instead of a two-layer structure, a stacked structure of a molybdenum film, an aluminum film, and a molybdenum film is preferably employed.

  Next, a resist mask is formed using a photolithography method, etching treatment for forming a gate electrode and a gate line is performed, and a conductive film functioning as a gate electrode (also referred to as a gate electrode) 716 ~ 725 are formed.

  Next, a resist mask is formed by photolithography, and an impurity element imparting N-type is added to the crystalline semiconductor films 706 and 708 to 710 at a low concentration by ion doping or ion implantation. N-type impurity regions 711 and 713 to 715 and channel formation regions 780 and 782 to 784 are formed. The impurity element imparting N-type may be an element belonging to Group 15, for example, phosphorus (P) or arsenic (As).

  Next, a resist mask is formed by photolithography, and an impurity element imparting P-type conductivity is added to the crystalline semiconductor film 707 to form a P-type impurity region 712 and a channel formation region 781. For example, boron (B) is used as the impurity element imparting P-type.

  Next, an insulating film is formed so as to cover the gate insulating film 705 and the conductive films 716 to 725. As the insulating film, a single layer or a film containing an inorganic material such as silicon, an oxide of silicon, or a silicon nitride, or an organic material such as an organic resin is formed by a known means (plasma CVD method or sputtering method). It is formed by stacking. Next, the insulating film is selectively etched by anisotropic etching mainly in the vertical direction to form insulating films (also referred to as sidewalls) 739 to 743 that are in contact with the side surfaces of the conductive films 716 to 725 (FIG. 6 (C)). Simultaneously with the formation of the insulating films 739 to 743, insulating films 734 to 738 obtained by etching the insulating film 705 are formed. The insulating films 739 to 743 are used as a mask for doping when an LDD (Lightly Doped Drain) region is formed later.

  Next, an impurity element imparting n-type conductivity is added to the crystalline semiconductor films 706 and 708 to 710 using a resist mask formed by a photolithography method and the insulating films 739 to 743 as masks. N-type impurity regions (also referred to as LDD regions) 727, 729, 731 and 733, and second N-type impurity regions 726, 728, 730 and 732 are formed. The concentration of the impurity element contained in the first N-type impurity regions 727, 729, 731, and 733 is lower than the concentration of the impurity element in the second N-type impurity regions 726, 728, 730, and 732. Through the above steps, N-type thin film transistors 744 and 746 to 748 and a P-type thin film transistor 745 are completed.

  In order to form the LDD region, there is a method using an insulating film on the sidewall as a mask. By using the sidewall insulating film as a mask, the width of the LDD region can be easily controlled, and the LDD region can be reliably formed.

  Next, an insulating film is formed as a single layer or a stacked layer so as to cover the thin film transistors 744 to 748 (FIG. 7A). The insulating film covering the thin film transistors 744 to 748 is formed by a known means (SOG method, droplet discharge method, etc.), an inorganic material such as silicon oxide or silicon nitride, polyimide, polyamide, benzocyclobutene, acrylic, epoxy. It is formed of a single layer or a laminated layer using an organic material such as siloxane. For example, when the insulating film covering the thin film transistors 744 to 748 has a three-layer structure, a film containing silicon oxide is formed as the first insulating film 749, a film containing resin is formed as the second insulating film 750, A film containing silicon nitride is preferably formed as the third insulating film 751. Note that the siloxane material corresponds to a material including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

  Note that before the insulating films 749 to 751 are formed or after one or more thin films of the insulating films 749 to 751 are formed, the crystallinity of the semiconductor film is restored and the activity of the impurity element added to the semiconductor film is increased. Heat treatment for the purpose of hydrogenation of the semiconductor film is preferably performed. For the heat treatment, thermal annealing, laser annealing, RTA, or the like is preferably applied.

  Next, the insulating films 749 to 751 are etched by photolithography to form contact holes that expose the N-type impurity regions 726 and 728 to 732 and the P-type impurity region 785. Subsequently, a conductive film is formed so as to fill the contact hole, and the conductive film is patterned to form conductive films 752 to 761 functioning as a source wiring and a drain wiring.

  The conductive films 752 to 761 are made of an element selected from titanium (Ti), aluminum (Al), and neodymium (Nd) by known means (plasma CVD method or sputtering method), or an alloy containing these elements as a main component. The material or compound material is formed as a single layer or a stacked layer. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. The conductive films 752 to 761 employ, for example, a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, and a barrier film, or a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, a titanium nitride film, and a barrier film. Good. Note that the barrier film corresponds to a thin film formed of titanium, titanium nitride, molybdenum, or molybdenum nitride. Aluminum and aluminum silicon are suitable materials for forming the conductive films 752 to 761 because they have low resistance and are inexpensive. In addition, when an upper layer and a lower barrier layer are provided, generation of hillocks of aluminum or aluminum silicon can be prevented. In addition, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film is reduced, and the crystalline semiconductor film is excellent. Contact can be made.

  Next, an insulating film 762 is formed so as to cover the conductive films 752 to 761 (FIG. 7B). The insulating film 762 is formed as a single layer or a stacked layer using an inorganic material or an organic material by a known means (SOG method, droplet discharge method, or the like). The insulating film 762 is preferably formed with a thickness of 0.75 to 3 μm.

  Subsequently, the insulating film 762 is etched by photolithography to form contact holes that expose the conductive films 757, 759, and 761. Subsequently, a conductive film is formed so as to fill the contact hole. The conductive film is formed of a conductive material using a known means (plasma CVD method or sputtering method). Next, the conductive film is patterned to form conductive films 763 to 765. Note that the conductive films 763 to 765 are one of a pair of conductive films included in the memory element. Therefore, the conductive films 763 to 765 are preferably formed in a single layer or a stacked layer using titanium or an alloy material or a compound material containing titanium as a main component. Since titanium has a low resistance value, it leads to a reduction in the size of the memory element, and high integration can be realized. In the photolithography process for forming the conductive films 763 to 765, wet etching may be performed in order to prevent damage to the lower thin film transistors 744 to 748, and hydrogen fluoride (HF) is used as an etchant. Alternatively, ammonia overwater may be used.

  Next, an insulating film 766 is formed so as to cover the conductive films 763 to 765. The insulating film 766 is formed as a single layer or a stacked layer using an inorganic material or an organic material by a known means (SOG method, droplet discharge method, or the like). The insulating film 766 is preferably formed with a thickness of 0.75 to 3 μm. Subsequently, the insulating film 766 is etched by photolithography to form contact holes 767 to 769 that expose the conductive films 763 to 765.

  Next, a conductive film 786 functioning as an antenna is formed in contact with the conductive film 765 (FIG. 8A). The conductive film 786 is formed using a conductive material by a known means (plasma CVD method, sputtering method, printing method, droplet discharge method). Preferably, the conductive film 786 is an element selected from aluminum (Al), titanium (Ti), silver (Ag), and copper (Cu), or an alloy material or a compound material containing these elements as a main component. It is formed by layer or lamination. Specifically, the conductive film 786 is formed using a paste containing silver by a screen printing method, and then heat-treated at 50 to 350 degrees. Alternatively, an aluminum film is formed by a sputtering method, and the aluminum film is formed by patterning. For the patterning of the aluminum film, a wet etching process may be used, and after the wet etching process, a heat treatment of 200 to 300 degrees may be performed.

  Next, an organic compound layer 787 is formed so as to be in contact with the conductive films 763 and 764 (FIG. 8B). The organic compound layer 787 is formed by a known means (such as a droplet discharge method or a vapor deposition method). Subsequently, a conductive film 771 is formed so as to be in contact with the organic compound layer 787. The conductive film 771 is formed by a known means (a sputtering method or a vapor deposition method).

  Through the above steps, a memory element portion 789 including a stack of the conductive film 763, the organic compound layer 787, and the conductive film 771, and a memory element portion 790 including a stack of the conductive film 764, the organic compound layer 787, and the conductive film 771. Is completed.

  Note that in the above manufacturing process, the heat resistance of the organic compound layer 787 is not strong; therefore, the step of forming the organic compound layer 787 is performed after the step of forming the conductive film 786 functioning as an antenna.

  Next, an insulating film 772 functioning as a protective film is formed by a known means (an SOG method, a droplet discharge method, or the like) so as to cover the memory element portions 789 and 790 and the conductive film 786 functioning as an antenna. The insulating film 772 is formed using a film containing carbon such as DLC (diamond-like carbon), a film containing silicon nitride, a film containing silicon nitride oxide, or an organic material, preferably an epoxy resin.

Next, the element formation layer 791 including the thin film transistors 744 to 748, the memory element portions 789 and 790, the conductive film 786 functioning as an antenna, and the like is peeled from the substrate 701. Here, after the openings 773 and 774 are formed by irradiation with laser light (for example, UV light) (FIG. 9A), the element formation layer 791 is peeled from the substrate 701 using physical force. it can. Further, after the openings 773 and 774 are formed and before the element formation layer 791 is peeled from the substrate 701, an etching agent is introduced into the openings 773 and 774 and the peeling layer 702 is removed (FIG. 9B). ) May be peeled off. As the etchant, a gas or liquid containing halogen fluoride or an interhalogen compound is used. For example, chlorine trifluoride (ClF ₃ ) is used as a gas containing halogen fluoride. Then, the element formation layer 791 is peeled from the substrate 701. Note that the peeling layer 702 may be partially left without being completely removed. By doing so, it is possible to suppress the consumption of the etching agent and shorten the processing time required for removing the release layer. Further, the element formation layer 791 can be held over the substrate 701 even after the peeling layer 702 is removed.

  The substrate 701 from which the element formation layer 791 has been peeled is preferably reused for cost reduction. The insulating film 772 is formed so that the element formation layer 791 is not scattered after the separation film 702 is removed. Since the element formation layer 791 is small and thin, the element formation layer 791 is not closely attached to the substrate 701 after the peeling layer 702 is removed, and thus is easily scattered. However, by forming the insulating film 772 over the element formation layer 791, the element formation layer 791 is weighted and scattering from the substrate 701 can be prevented. In addition, although the element formation layer 791 alone is thin and light, by forming the insulating film 772, the element formation layer 791 peeled off from the substrate 701 does not become a shape wound by stress or the like, and a certain degree of strength is secured. can do.

  Next, one surface of the element formation layer 791 is attached to the first sheet material 775 and completely peeled from the substrate 701 (FIG. 10A). In the case where a part of the separation layer 702 is not removed and a part is left, the element formation layer is separated from the substrate 701 using physical means. Subsequently, a second sheet material 776 is provided on the other surface of the element formation layer 791, and then one or both of heat treatment and pressure treatment are performed, and the second sheet material 776 is attached. In addition, the first sheet material 775 is peeled off at the same time or after the second sheet material 776 is provided, and a third sheet material 777 is provided instead. Then, one or both of heat treatment and pressure treatment is performed, and the third sheet material 777 is bonded. Then, a semiconductor device sealed with the second sheet material 776 and the third sheet material 777 is completed (FIG. 10B).

  Note that the first sheet material 775 and the second sheet material 776 may be sealed, but the sheet material for peeling the element formation layer 791 from the substrate 701 and the element formation layer 791 are sealed. When a different sheet material is used for the sheet material, the element formation layer 791 is sealed with the second sheet material 776 and the third sheet material 777 as described above. This is because, for example, when the element forming layer 791 is peeled from the substrate 701, the first sheet material 775 may be adhered to the substrate 701 as well as the element forming layer 791. Effective when you want to use.

  As the second sheet material 776 and the third sheet material 777 used for sealing, a film made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, paper made of a fibrous material, a base film (polyester, A laminated film of an adhesive synthetic resin film (such as an acrylic synthetic resin or an epoxy synthetic resin) and the like can be used. In addition, the film is subjected to heat treatment and pressure treatment by thermocompression bonding, and when performing heat treatment and pressure treatment, the adhesive layer provided on the outermost surface of the film, Alternatively, a layer (not an adhesive layer) provided in the outermost layer is melted by heat treatment and bonded by pressure. Further, an adhesive layer may be provided on the surface of the second sheet material 776 and the third sheet material 777, or the adhesive layer may not be provided. The adhesive layer corresponds to a layer containing an adhesive such as a thermosetting resin, an ultraviolet curable resin, an epoxy resin adhesive, or a resin additive. In addition, it is preferable to perform silica coating on the sheet material to be sealed in order to prevent moisture and the like from entering the inside after sealing. For example, a sheet material obtained by laminating an adhesive layer, a film such as polyester, and silica coating is used. be able to.

  In addition, as the second sheet material 776 and the third sheet material 777, films provided with antistatic measures for preventing static electricity (hereinafter referred to as antistatic films) can be used. Examples of the antistatic film include a film in which an antistatic material is dispersed in a resin, a film on which an antistatic material is attached, and the like. The film provided with an antistatic material may be a film provided with an antistatic material on one side, or a film provided with an antistatic material on both sides. Furthermore, a film provided with an antistatic material on one side may be attached to the layer so that the surface provided with the antistatic material is on the inside of the film, or on the outside of the film. It may be pasted. Note that the antistatic material may be provided on the entire surface or a part of the film. As the antistatic material here, a surfactant such as metal, indium and tin oxide (ITO), an amphoteric surfactant, a cationic surfactant or a nonionic surfactant is used. it can. In addition, as the antistatic material, a resin material containing a crosslinkable copolymer polymer having a carboxyl group and a quaternary ammonium base in the side chain can be used. An antistatic film can be obtained by sticking, kneading, or applying these materials to a film. By sealing with an antistatic film, it is possible to prevent the semiconductor element from being adversely affected by external static electricity or the like when handled as a product.

  Note that this embodiment can be freely combined with the above embodiment. That is, the material and the formation method described in the above embodiment can be used in this embodiment, and the material and the formation method described in this embodiment can be used in the above embodiment.

(Embodiment 6)
In this embodiment, an embodiment in which a semiconductor device manufactured using the method described in the above embodiment is used as an RFID tag capable of transmitting and receiving data without contact will be described with reference to FIGS. .

  The RFID tag 220 has a function of communicating data without contact, and includes a power supply circuit 211, a clock generation circuit 212, a data demodulation / modulation circuit 213, a control circuit 214 for controlling other circuits, an interface circuit 215, a memory 216, A data bus 217 and an antenna (antenna coil) 218 are included (FIG. 11A).

  The power supply circuit 211 is a circuit that generates various power supplies to be supplied to each circuit inside the semiconductor device based on the AC signal input from the antenna 218. The clock generation circuit 212 is a circuit that generates various clock signals to be supplied to each circuit in the semiconductor device based on the AC signal input from the antenna 218. The data demodulation / modulation circuit 213 has a function of demodulating / modulating data communicated with the reader / writer 219. The control circuit 214 has a function of controlling the memory 216. The antenna 218 has a function of transmitting and receiving an electromagnetic field or a radio wave. The reader / writer 219 controls communication with the semiconductor device, control, and processing related to the data. Note that the RFID tag is not limited to the above-described configuration, and may be a configuration in which other elements such as a power supply voltage limiter circuit and cryptographic processing dedicated hardware are added.

  The RFID tag may be of a type in which power supply voltage is supplied to each circuit by radio waves without mounting a power supply (battery), or power supply (battery) is supplied to each circuit instead of an antenna. It may be a type that is mounted, or may be a type that supplies a power supply voltage by radio waves and a power source.

  When the semiconductor device of the present invention is used for an RFID tag or the like, the point of performing contactless communication, the point that multiple reading is possible, the point that data can be written, the point that it can be processed into various shapes, and the selection Depending on the frequency to be used, there are advantages such as wide directivity and wide recognition range. RFID tags can be used for IC tags that can identify individual information about people and objects by wireless communication without contact, labels that can be attached to target objects by label processing, wristbands for events and amusements, etc. Can be applied. Further, the RFID tag may be molded using a resin material, or may be directly fixed to a metal that hinders wireless communication. Furthermore, the RFID tag can be used for system operation such as an entrance / exit management system and a payment system.

  Next, one mode when the semiconductor device of the present invention is actually used as an RFID tag will be described. A reader / writer 320 is provided on the side surface of the portable terminal including the display portion 321, and an RFID tag 323 is provided on the side surface of the article 322 (FIG. 11B). When the reader / writer 320 is held over the RFID tag 323 included in the item 322, the display unit 321 displays information about the product, such as a description of the product, such as the raw material and origin of the product, the inspection result for each production process, and the history of the distribution process. Is done. In addition, when the product 326 is conveyed by a belt conveyor, the product 326 can be inspected using the reader / writer 324 and the RFID tag 325 provided on the product 326 (FIG. 11C). In this manner, by using the RFID tag in the system, information can be easily acquired, and high functionality and high added value are realized.

  As a signal transmission method in the semiconductor device capable of inputting / outputting non-contact data described above, an electromagnetic coupling method, an electromagnetic induction method, a microwave method, or the like can be used. The transmission method may be appropriately selected by the practitioner in consideration of the intended use, and an optimal antenna may be provided according to the transmission method.

  For example, when an electromagnetic coupling method or an electromagnetic induction method (for example, 13.56 MHz band) is applied as a signal transmission method in a semiconductor device, the conductive film functioning as an antenna is used because electromagnetic induction due to a change in magnetic field density is used. Are formed in a ring shape (for example, a loop antenna) or a spiral shape (for example, a spiral antenna).

  In addition, when a microwave method (for example, UHF band (860 to 960 MHz band), 2.45 GHz band, or the like) is applied as a signal transmission method in a semiconductor device, the wavelength of an electromagnetic wave used for signal transmission is considered. The length of the conductive layer functioning as an antenna may be set as appropriate. For example, the conductive film functioning as an antenna may be linear (for example, a dipole antenna), flat (for example, a patch antenna), or ribbon type. It can be formed into a shape or the like. Further, the shape of the conductive film functioning as an antenna is not limited to a linear shape, and may be provided in a curved shape, a meandering shape, or a combination thereof in consideration of the wavelength of electromagnetic waves. Note that, regardless of the shape of the conductive film that functions as an antenna, as shown in the above embodiment mode, the pressure applied to the element group when the element group is attached and monitored is monitored. By controlling so that an excessive pressure is not applied to the element group, the element group can be prevented from being damaged.

  Note that this embodiment can be freely combined with the above embodiment.

(Embodiment 7)
Although the semiconductor device of the present invention has a wide range of uses, it can be used for electronic devices, for example. As an electronic device, it can be used for, for example, a television receiver, a computer, a portable information terminal such as a mobile phone, a digital camera, a video camera, a navigation system, and the like. A case where the semiconductor device of the present invention is applied to a cellular phone will be described with reference to FIG.

  The cellular phone includes housings 2700 and 2706, a panel 2701, a housing 2702, a printed wiring board 2703, operation buttons 2704, and a battery 2705. The panel 2701 is detachably incorporated in the housing 2702, and the housing 2702 is fitted on the printed wiring board 2703. The shape and dimensions of the housing 2702 are changed as appropriate in accordance with the electronic device in which the panel 2701 is incorporated. A plurality of packaged semiconductor devices are mounted on the printed wiring board 2703, and the semiconductor device of the present invention can be used as one of them. The plurality of semiconductor devices mounted on the printed wiring board 2703 have any one function of a controller, a central processing unit (CPU), a memory, a power supply circuit, a sound processing circuit, a transmission / reception circuit, and the like.

  The panel 2701 is provided together with the printed wiring board 2703 through the connection film 2708. The panel 2701, the housing 2702, and the printed wiring board 2703 are housed in the housings 2700 and 2706 together with the operation buttons 2704 and the battery 2705. A pixel region 2709 included in the panel 2701 is arranged so as to be visible from an opening window provided in the housing 2700.

  The semiconductor device of the present invention is characterized in that it is small, thin, and lightweight. With the above characteristics, a limited space inside the housings 2700 and 2706 of the electronic device can be used effectively.

  The semiconductor device of the present invention can also be used as an RFID tag. For example, banknotes, coins, securities, certificates, bearer bonds, packaging containers, books, recording media, personal belongings, vehicles It can be used in foods, clothing, health supplies, daily necessities, medicines, electronic devices and the like. These examples will be described with reference to FIG.

  Banknotes and coins are money that circulates in the market, and include those that are used in the same way as money in a specific area (cash vouchers), commemorative coins, and the like. Securities refer to checks, securities, promissory notes, etc. (FIG. 13A). The certificate refers to a driver's license, resident's card, etc. (FIG. 13B). Bearer bonds refer to stamps, gift certificates, various gift certificates, etc. (FIG. 13C). Packaging containers refer to wrapping paper for lunch boxes, plastic bottles, and the like (FIG. 13D). Books refer to books, books, and the like (FIG. 13E). The recording media refer to DVD software, video tapes, and the like (FIG. 13F). The vehicles refer to vehicles such as bicycles, ships, and the like (FIG. 13G). Personal belongings refer to bags, glasses, and the like (FIG. 13H). Foods refer to food products, beverages, and the like. Clothing refers to clothing, footwear, and the like. Health supplies refer to medical equipment, health equipment, and the like. Livingware refers to furniture, lighting equipment, and the like. Chemicals refer to pharmaceuticals, agricultural chemicals, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (TV receivers, flat-screen TV receivers), mobile phones, and the like.

  Forgery can be prevented by providing RFID tags on bills, coins, securities, certificates, bearer bonds, and the like. In addition, it is possible to improve the efficiency of inspection systems and rental store systems by providing RFID tags for personal items such as packaging containers, books, and recording media, foods, daily necessities, and electronic devices. it can. By providing RFID tags on vehicles, health supplies, medicines, etc., counterfeiting and theft can be prevented, and medicines can prevent mistakes in taking medicines. The RFID tag is provided by being attached to the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin.

  In this way, by providing RFID tags on packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of inspection systems and rental store systems. it can. In addition, forgery and theft can be prevented by providing an RFID tag in vehicles. Moreover, by embedding it in creatures such as animals, it is possible to easily identify individual creatures. For example, by burying an RFID tag in a living creature such as livestock, it is possible to easily identify the year of birth, sex, type, or the like.

  As described above, the semiconductor device of the present invention can be provided and used for any product. Note that this embodiment can be freely combined with the above embodiment.

  In this example, a structure of a power supply circuit and a delay circuit included in the semiconductor device described in the above embodiment modes and a calculation result of the operation will be described with reference to FIGS.

  The semiconductor device of the present invention includes at least a power supply circuit 430 and a delay circuit 443 (FIG. 14).

  The power supply circuit 430 includes a rectifier circuit that generates a signal (FIG. 15B) obtained by rectifying and smoothing a received carrier wave (FIG. 15A), and a capacitor element that holds the signal generated by the rectifier circuit Have The signal generated by the rectifier circuit is supplied to the delay circuit 443.

  The delay circuit 443 includes an AC power supply 431, a capacitor 432, N-type transistors 433 and 434, a capacitor 435, inverters 436 and 437, a resistor 438, a capacitor 439, inverters 440 and 441, and a capacitor 442. The capacitor elements 432, 435, 439, and 442 and the resistor element 438 include a conductive film, a semiconductor film, a semiconductor film doped with an impurity such as phosphorus or boron, or the like.

  The delay circuit 443 generates a reset signal (FIG. 15C) using a signal (FIG. 15B) input from the power supply circuit 430, and supplies the generated reset signal to each circuit. The reset signal generated by the delay circuit 443 is a signal supplied to the circuit 444 during the writing operation or the reading operation. The circuit 444 to which the reset signal is supplied is each circuit included in the semiconductor device, such as a clock signal generation circuit, a correction circuit, a determination circuit, a controller circuit, and an encoding circuit.

  If the generation of the reset signal of the delay circuit 443 is too early, supply of power to each circuit becomes unstable, and each circuit may not perform the reset operation. On the other hand, if the generation of the reset signal of the delay circuit 443 is too late, each circuit may start the next operation without performing the reset operation. As described above, when the delay circuit 443 does not generate a reset signal at a desired timing, each circuit may not function normally. Therefore, the delay circuit 443 needs to generate a reset signal at a desired timing.

  The timing for generating the reset signal of the delay circuit 443 also depends on the resistance value and the capacitance value in the delay circuit 443. More specifically, it depends on the resistance value of the resistance element 438 and the capacitance value of the capacitance element 439. Therefore, the present invention generates a reset signal at a desired timing by optimizing the resistance value of the resistance element 438 and the value of the capacitor element 439.

  More specifically, since there is a problem that the timing of generating the reset signal is too early, the resistance value of the resistance element 438 is optimized from 100 kΩ to 400 kΩ. As a result, the time from the input of the carrier wave to the semiconductor device until the generation of the reset signal was m seconds (m> 0, refer to the waveform of the one-dot chain line in FIG. 15C). It was possible to delay until n> 0, see the dotted waveform in FIG. As described above, the semiconductor device can be normally operated by delaying the generation timing of the reset signal and supplying the reset signal to each circuit at a desired timing.

  Note that this embodiment can be freely combined with the above embodiment mode.

4A and 4B illustrate a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate a method for manufacturing a semiconductor device of the present invention. The figure which shows the continuous film-forming apparatus of this invention. 4A and 4B illustrate a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate a method for manufacturing a semiconductor device of the present invention. 8A and 8B illustrate usage patterns of a semiconductor device of the present invention. 8A and 8B illustrate usage patterns of a semiconductor device of the present invention. 8A and 8B illustrate usage patterns of a semiconductor device of the present invention. 6A and 6B illustrate a structure of a semiconductor device of the present invention. The figure which shows a calculation result.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate 11 Metal film 12 Metal oxide film 13 Insulating film 14 TFT layer 15 Insulating film 16 Opening 17 First sheet material 18 Second sheet material 19 Peeling layer 22 Metal oxide film 70 Chamber 71 Support base 72 Heat source body 73 Heat insulation Material 30 Element formation layer 31 Metal oxide film 111 First chamber 112 Second chamber 113 Third chamber 114 Fourth chamber 110 Load lock chamber 115 Load lock chamber 120 Common chamber 121 Robot arm 128 Cassette 129 Cassette 122 Gate valve 123 Gate valve 124 Gate valve 125 Gate valve 126 Gate valve 127 Gate valve 142 Cassette 143 Cassette 144 Load lock chamber 146 Load lock chamber 145 Chamber 150 Common chamber 147 Gate valve 148 Gate valve 149 Gate valve 151 Robot arm

Claims (13)

A metal oxide film is formed on the substrate by sputtering,
Forming an element forming layer having a thin film transistor on the metal oxide film;
Forming an insulating film covering the element forming layer;
An opening is formed in the insulating film and the element formation layer so that a part of the surface of the metal oxide film is exposed, and then the element formation layer is peeled from the substrate. Method. Form a metal film on the substrate,
A metal oxide film is formed on the metal film by sputtering,
Forming an element forming layer having a thin film transistor on the metal oxide film;
Forming an insulating film covering the element forming layer;
An opening is formed in the insulating film and the element formation layer so that a part of the surface of the metal oxide film is exposed, and then the element formation layer is peeled from the substrate. Method. In claim 2 ,
As the metal film, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), A semiconductor using an element selected from ruthenium (Ru), rhodium (Rh), lead (Pb), osmium (Os), iridium (Ir), or an alloy material or a compound material containing the element as a main component Device fabrication method. In any one of Claims 1 thru | or 3 ,
A method for manufacturing a semiconductor device, wherein the metal oxide film is formed in an oxygen atmosphere. In any one of Claims 1 thru | or 4 ,
The method for manufacturing a semiconductor device, wherein the element formation layer further includes an antenna. In any one of Claims 1 thru | or 5 ,
A method for manufacturing a semiconductor device, wherein a diamond-like carbon film, a film containing carbon, a film containing silicon nitride, a film containing silicon nitride oxide, or a film made of an organic material is used as the insulating film. In any one of Claims 1 thru | or 6 ,
A method for manufacturing a semiconductor device, wherein the opening is formed by laser light irradiation. In any one of Claims 1 thru | or 7 ,
A method for manufacturing a semiconductor device, wherein after the element formation layer is peeled from the substrate, the element formation layer is sealed with flexible first and second films. In claim 8 ,
A method for manufacturing a semiconductor device, wherein an antistatic film is used as the first and second films. In claim 8 ,
A method for manufacturing a semiconductor device, wherein a film on which an antistatic material is attached is used as each of the first and second films. In claim 1,
A method for manufacturing a semiconductor device, wherein an etchant is introduced into the opening to remove at least part of the metal oxide film. In claim 2 or 3,
A method for manufacturing a semiconductor device, wherein an etchant is introduced into the opening to remove at least part of the metal film and the metal oxide film. In claim 2 or 3,
A method for manufacturing a semiconductor device, wherein the metal oxide film is formed using a metal element different from a metal element contained in the metal film.

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