JP4954537B2 - Semiconductor device - Google Patents

Description

The present invention relates to a semiconductor device capable of transmitting and receiving information.

The technology as the background of the present invention relates to a semiconductor device, and more particularly to a device capable of transmitting and receiving information wirelessly.

A typical example of a semiconductor device that can transmit and receive information wirelessly is a wireless chip. The wireless chip attaches an individual identification number (ID) to a certain object, stores the history of the object, and is used for production management, or by a tag (wireless tag) with an ID attached to the wireless chip, Used to manage and manage the use of personal information and money. Such a wireless chip is called an ID tag, an IC card, or the like, and its production amount and usage amount are increasing with the development of individual identification technology and the increase in demand.

The wireless chip takes various forms such as a communication distance, a communication method, a size, presence / absence of an internal power supply, a configuration of a built-in memory, and the like depending on applications. In production management, there is an increasing demand for wireless tags that are small, lightweight, and have a long communication distance.

A wireless tag that does not have an internal power supply and operates by supplying power from the outside can be reduced in size and weight.However, depending on the surrounding conditions, especially the presence or absence of a conductor near the antenna, the communication distance can vary greatly. Is done.

Since the wireless chip transmits and receives information wirelessly, there is a risk of interception or forgery of information. In addition, since the wireless chip may store money information and important information related to personal privacy, it is necessary to increase the safety of the information stored inside.

Therefore, when a rewritable memory is built in the wireless chip, measures such as encryption technology are required.

In order to prevent forgery of information, there is a method of incorporating a memory (write-once memory) that can be written only once and cannot be rewritten.

When a write-once memory is built in a wireless chip, it is easier to use a memory that can write information after manufacturing, especially at the beginning of use, than a memory that can write information only at the time of manufacturing, such as a mask ROM. Demand will be higher.

Further, the number of wireless chips used is increasing year by year, and the production of cheaper wireless chips is required.

In order to supply wireless chips that meet demand, small materials, light weight, long communication distances, high information security, ease of use, and low cost materials that are not expensive to manufacture, or simple There is a need to provide a wireless chip with a structure.

Many of these wireless chips in practical use have a circuit (also called an IC (Integrated Circuit) chip) using a semiconductor substrate such as Si and an antenna, and the IC chip is a memory circuit (also called a memory). ) And a control circuit. These semiconductor devices are required to be manufactured at low cost, and in recent years, development of organic TFTs and organic memories using organic compounds in control circuits, memory circuits, etc. has been actively carried out (for example, patent documents). 1).
JP 2004-47791 A

In view of the above, the present invention provides a semiconductor device capable of transmitting and receiving information wirelessly, capable of writing information after manufacture, and capable of preventing forgery due to information rewriting. Furthermore, the present invention provides a semiconductor device that can be manufactured at low cost from a simple structure and inexpensive material. In addition, an object of the present invention is to provide a semiconductor device that has the above-described function and does not hinder wireless communication performed by the semiconductor device of the present invention by the configuration inside the device.

In order to solve the above problems, the present invention takes the following measures.

A semiconductor device of the present invention includes a memory element having a memory cell array including a plurality of memory cells, and a control circuit that controls the memory elements, and each of the plurality of memory cells includes a transistor and a memory element. Has a first conductive layer, an organic compound layer, and a second conductive layer having a linear shape.

A semiconductor device of the present invention includes a memory element having a memory cell array including a plurality of memory cells, a control circuit for controlling the memory elements, and an antenna. Each of the plurality of memory cells includes a transistor and a memory element. The memory element includes a first conductive layer, an organic compound layer, and a second conductive layer having a linear shape.

A semiconductor device of the present invention includes a memory element having a memory cell array including a plurality of memory cells, and a control circuit that controls the memory elements, and each of the plurality of memory cells includes a transistor and a memory element. Has a first conductive layer, an organic compound layer, and a second conductive layer having a linear shape, and one or both of the first conductive layer and the second conductive layer have translucency. It is characterized by that.

A semiconductor device of the present invention includes a memory element having a memory cell array including a plurality of memory cells, a control circuit for controlling the memory elements, and an antenna. Each of the plurality of memory cells includes a transistor and a memory element. The memory element includes a first conductive layer, an organic compound layer, and a second conductive layer having a linear shape, and one or both of the first conductive layer and the second conductive layer are light-transmitting. It has the property.

The second conductive layer is formed in a linear shape and is electrically connected to each of the memory elements of the plurality of memory cells.

In the above structure, the organic compound layer is an electron transport layer or a hole transport layer.

In the above structure, the organic compound layer uses a material whose electrical resistance is changed by irradiating light, heating, or applying an electrical action.

In addition to a memory element having an organic compound, the semiconductor device of the present invention includes a DRAM (Dynamic Random Access Memory), a SRAM (Static Random Access Memory), a FeRAM (Ferroelectric Random Access Memory), and a Mask ROM Memory. ), PROM (Programmable Read Only Memory), EPROM (Electrically Programmable Read Only Memory), EEPROM (Electrically Erasable Read Only Memory) and one or more selected from flash memory. The Even in the case of an organic memory, DRAM, FeRAM, or the like can be realized by selecting a material.

In addition to the control circuit, the semiconductor device of the present invention includes one or more selected from a power supply circuit, a clock generation circuit, a demodulation circuit, a modulation circuit, a command analysis unit, and an encoding circuit. . Note that the control circuit not only controls the organic memory, but may also control a memory having another configuration, and is also referred to as a memory control circuit.

In the present invention, the organic memory and the control circuit can be provided on a glass substrate or a flexible substrate. Note that the organic memory and the control circuit may be provided on the same substrate or on different substrates, and the production efficiency can be improved by providing them on the same substrate.

Furthermore, in the present invention, the organic memory, the control circuit, and the antenna can be provided on a glass substrate or a flexible substrate. Note that the organic memory and the control circuit may be provided on the same substrate or on different substrates, and the production efficiency can be improved by providing them on the same substrate.

In the above structure, the control circuit may include a thin film transistor.

Note that in this specification, a semiconductor device includes a wireless chip, a wireless tag, an electronic tag, an ID chip, an ID tag, an IC tag, an IC chip, an RF (Radio Frequency Identification) tag, an RFID (Radio Frequency Identification) tag, and the like. .

Since the memory element of the present invention is composed of an organic compound whose electrical resistance changes when irradiated with light, heated, or applied with an electrical action, light, heat, or electrical action is produced after manufacturing a semiconductor device. By adding, information can be written and a user-friendly semiconductor device can be provided.

Further, since the memory element of the present invention can only write (append) data except when manufacturing a chip, it can prevent forgery of information by rewriting and can provide a highly safe semiconductor device. .

In addition, by using an inexpensive material such as a glass substrate and incorporating a memory having a memory element with a simple structure, an inexpensive semiconductor device can be provided.

In the internal structure of the semiconductor device of the present invention, by manufacturing the second conductive film of the memory element in a linear shape, it is possible to provide a semiconductor device having a long communication distance without hindering wireless communication performed by the semiconductor device. it can.

Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

(Embodiment 1)
In this embodiment mode, a structure of a semiconductor device that performs wireless communication with an external communication device (reader / writer) through the antenna of the present invention will be described.

A conceptual diagram of the semiconductor device of the present invention is shown in FIG.

As shown in FIG. 1A, a semiconductor device 101 according to the present invention includes an antenna 102, a power supply circuit 103, a clock generation circuit 104, a demodulation circuit 111, a modulation circuit 112, a command analysis unit 113, a memory control circuit 114, and an encoding. The circuit 115 and the memory 108 are included. Information can be exchanged with an external communication device (reader / writer 109) in a contactless manner.

As shown in FIG. 1B, in the case where the semiconductor device 101 is connected to an antenna 102 which is separately manufactured, the semiconductor device 101 may include a wiring 110 for connecting the antenna. When the semiconductor device 101 transmits and receives information without contact, an antenna manufactured separately from the semiconductor device is connected to the wiring 110.

The power supply circuit 103 is a circuit that generates various power supplies to be supplied to each circuit inside the semiconductor device 101 based on the AC signal input from the antenna 102. The clock generation circuit 104 is a circuit that generates various clock signals to be supplied to each circuit in the semiconductor device 101 based on the AC signal input from the antenna 102. The demodulation circuit 111 has a function of demodulating the signal received by the antenna 102, and the modulation circuit 112 performs ASK or FSK modulation on the transmitted signal. The memory control circuit 114 has a function of controlling the memory 108. The instruction analysis unit 113 has a function of analyzing the demodulated instruction, and the encoding circuit 115 performs encoding such as a Manchester method on the digital signal to be transmitted. The antenna 102 has a function of transmitting and receiving electromagnetic waves or radio waves.

Further, the semiconductor device is not limited to the above configuration, and may include other elements such as a congestion control circuit and a cryptographic processing circuit.

The memory 108 of the present invention includes a layer containing an organic compound. In this specification, a layer including an organic compound is referred to as an organic compound layer, and a memory including the organic compound layer is referred to as an organic memory.

An organic memory has an organic compound layer in a memory element, and information is obtained by changing the electric resistance of the organic compound layer by irradiating the organic compound layer with light, heating, or applying an electrical action. Remember.

When an organic compound whose electrical resistance change is irreversible is used for the organic compound layer in the memory element, a write-once memory is obtained, and when an electrical resistance change is reversible, a rewritable memory is obtained.

Further, the memory 108 incorporated in the semiconductor device 101 of the present invention may be only an organic memory, or may include one or a plurality of memories having other configurations separately from the organic memory.

FIG. 14 shows a configuration in which the semiconductor device 101 of the present invention includes a memory 108b having another configuration.

As shown in FIG. 14A, a semiconductor device 101 of the present invention includes an antenna 102, a power supply circuit 103, a clock generation circuit 104, a demodulation circuit 111, a modulation circuit 112, a command analysis unit 113, a memory control circuit 114, and an encoding. A circuit 115 and a memory 108 including an organic memory 108a and a memory 108b having another configuration are included. Information can be exchanged with an external communication device (reader / writer 109) in a contactless manner.

In addition, as illustrated in FIG. 14B, when the semiconductor device 101 is connected to the antenna 102 which is separately manufactured, the semiconductor device 101 may include a wiring 110 for connecting the antenna. When the semiconductor device 101 transmits and receives information without contact, an antenna manufactured separately from the semiconductor device is connected to the wiring 110.

The power supply circuit 103 is a circuit that generates various power supplies to be supplied to each circuit inside the semiconductor device 101 based on the AC signal input from the antenna 102. The clock generation circuit 104 is a circuit that generates various clock signals to be supplied to each circuit in the semiconductor device 101 based on the AC signal input from the antenna 102. The demodulation circuit 111 has a function of demodulating the signal received by the antenna 102, and the modulation circuit 112 performs ASK or FSK modulation on the transmitted signal. The memory control circuit 114 has a function of controlling the memory 108. The instruction analysis unit 113 has a function of analyzing the demodulated instruction, and the encoding circuit 115 performs encoding such as a Manchester method on the digital signal to be transmitted. The antenna 102 has a function of transmitting and receiving electromagnetic waves or radio waves.

Further, the semiconductor device is not limited to the above configuration, and may include other elements such as a congestion control circuit and a cryptographic processing circuit.

The memory 108 of the present invention includes a layer containing an organic compound. In this specification, a layer including an organic compound is referred to as an organic compound layer, and a memory including the organic compound layer is referred to as an organic memory.

The organic memory 108a has an organic compound layer in a memory element, and changes the electrical resistance of the organic compound layer by irradiating the light, heating, or applying an electrical action to the organic compound layer. Remember.

When an organic compound whose electrical resistance change is irreversible is used for the organic compound layer in the memory element, a write-once memory is obtained, and when an electrical resistance change is reversible, a rewritable memory is obtained.

Here, the memory 108b having other configurations includes, for example, a DRAM (Dynamic Random Access Memory), a SRAM (Static Random Access Memory), a FeRAM (Ferroelectric Random Access Memory), and a ROM ROM (Magic ROM). The read only memory (EPROM), the electrically programmable read only memory (EPROM), the electrically erasable read only memory (EEPROM), and the flash memory are not limited to this example. One or a plurality of memories having other configurations can be included.

Next, the structure of the organic memory is shown in FIG.

The organic memory 201 includes a memory cell array 202, a decoder 203, a selector 204, and a read / write circuit 205.

A memory cell 206 of the organic memory 201 includes one transistor 207 and a storage element 208.

The memory element 208 has a structure in which an organic compound layer is sandwiched between a pair of conductive layers, that is, a first conductive layer and a second conductive layer. Of the pair of conductive layers, the first conductive layer is connected to one of a source region and a drain region included in the transistor 207 in the memory cell 206.

Of the pair of conductive layers, the second conductive layer may be common to the memory elements 208 of all the memory cells 206 in one organic memory 201. The second conductive layer applies a common potential to one end of all the memory elements during the operation (reading or writing) of the organic memory, and is referred to as a common electrode in this specification.

As shown in FIG. 2B, in the transistor 207 in the memory cell 206, the bit line Bm (1 ≦ m ≦ x) is connected to the source region or drain region that is not connected to the memory element 208. The word line Wn (1 ≦ n ≦ y) is connected to the gate electrode. As described above, the memory cells 206 are provided in a matrix to form the memory cell array 202.

Next, the second conductive layer, that is, the common electrode will be described. FIG. 4 shows an example of the structure of the organic memory as seen from the top surface of the substrate and the direction of arrow A in FIG.

The common electrode 401 applies a common potential to one end of all the memory elements. The common electrode 401 is formed in a linear shape as shown in FIG. In addition, the form shown in FIG. 4 is an example, and a linear form is not limited to this.

Among semiconductor devices, in particular, when information is transmitted / received by an electromagnetic coupling method in which communication is performed by mutual induction or an electromagnetic induction method in which communication is performed by an induction electromagnetic field, a highly conductive substance such as a metal is planar in the vicinity of the antenna. If it exists widely, the communication distance becomes short.

This is because an electromagnetic wave emitted from the reader / writer generates an eddy current inside the highly conductive substance and absorbs the electromagnetic wave. Therefore, the semiconductor device cannot obtain a sufficient induced electromotive force.

When the common electrode is formed in a planar shape, the common electrode absorbs electromagnetic waves emitted from the reader / writer, and the communication distance of the wireless tag is shortened. In addition, the load on the reader / writer for operating the semiconductor device increases due to the eddy current generated in the common electrode.

Therefore, as shown in FIG. 4, when the common electrode 401 is formed in a linear shape, the absorption of electromagnetic waves can be reduced. Therefore, the communication distance becomes long without hindering the communication of the wireless tag.

The linear shape referred to here may be a square having a long second side compared to the first side, an ellipse having a long interfocal distance, or an elongated shape similar thereto. The common electrode applies the same potential to one end of all the memory elements, and for example, as shown in FIG. 4, it is preferable to form a square or an ellipse in a comb shape, and these are also included in a linear shape. However, the shape of a line is not limited to the examples given here as long as the absorption of electromagnetic waves due to the generation of the eddy current can be reduced. Furthermore, the shape of the common electrode 401 only needs to reduce the absorption of electromagnetic waves due to the generation of the eddy current, and does not require high processing accuracy.

Next, an operation when information is written to the organic memory 201 will be described with reference to FIG.

First, an operation when information is written by electrical action will be described. Here, a case where information is written to the memory cell 206 in the m-th column and the n-th row is described. In this case, the decoder 203 and the selector 204 select the bit line Bm in the m-th column and the word line Wn in the n-th row, and a voltage is applied to the gate electrode of the transistor 207 included in the memory cell 206 in the m-th column and the n-th row. Applied. Subsequently, a predetermined voltage is applied to Vwrite and the common electrode 401 in FIG.

Usually, the potential difference between Vwrite and the common electrode 401 is larger than the potential difference between Vread and the common electrode 401 at the time of reading. In addition, when a voltage is applied to Vwrite, no voltage is applied to Vread, and measures are taken to prevent current from flowing in the reverse direction by a circuit outside the figure. .

The voltage applied to the bit line Bm in the m-th column is transmitted to the first conductive layer that forms the memory element 208. By fixing the voltage of the common electrode 401 to a voltage lower than the voltage applied to the bit line Bm, a potential difference is generated between the first conductive layer and the second conductive layer. By this potential difference, the resistance value of the organic compound layer in the memory element 208 is changed, so that information can be written.

Next, a case where information is written by optical action will be described. In the case where information is written in an organic memory by an optical action, one or both of the first conductive layer and the second conductive layer constituting the memory element have a light-transmitting property. The organic compound layer is irradiated with light from the side of the conductive layer having the above.

When an organic compound whose electric resistance increases when subjected to an optical action is used as the material of the organic compound layer, the resistance value of the organic compound layer increases due to irradiation with light such as laser light.

In addition, as the material of the organic compound layer, a material whose electric resistance decreases when subjected to an optical action can be used. For example, when a conjugated polymer material doped with a photoacid generator is used, the resistance value of the organic compound layer is reduced by irradiation with light such as laser light.

For example, a case where laser light is irradiated will be described as an example of an optical action on the organic compound layer. The electric resistance of the organic compound layer irradiated with the laser light varies depending on the irradiation of the laser light with a diameter of the order of μm, although it depends on the size of the memory cell. For example, when a laser beam having a diameter of 1 μm passes at a linear velocity of 10 m / sec, the time during which the layer containing an organic compound included in one memory cell is irradiated with laser light is 100 nsec. In order to change the phase within a short time of 100 nsec, the laser power is preferably 10 mW and the power density is 10 kW / mm ² , for example. In the case of selectively irradiating laser light, it is preferable to use a pulsed laser irradiation apparatus.

As the laser irradiation apparatus, an apparatus capable of oscillating ultraviolet light, visible light, or infrared light can be used. Examples of laser irradiation devices include excimer laser oscillators such as KrF, ArF, XeCl, and Xe, gas laser oscillators such as He, He—Cd, Ar, He—Ne, and HF, YAG, GdVO ₄ , YVO ₄ , YLF, A solid-state laser oscillator using a crystal in which Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm is doped into a crystal such as YAlO ₃ or a semiconductor laser oscillator such as GaN, GaAs, GaAlAs, or InGaAsP can be used. In the solid-state laser oscillator, it is preferable to apply the fundamental wave or the second to fifth harmonics.

The writing method mentioned here is an example. Other methods for writing information to the organic memory include a method of locally heating the organic compound layer of the memory element, but are not limited to these examples.

Next, an operation when reading information written in the organic memory will be described.

FIG. 2B shows an example of reading by electrical action. Here, the read / write circuit 205 includes a resistance element 211 and a sense amplifier 212. However, the configuration of the read / write circuit 205 is not limited to the above configuration, and may have any configuration.

Information is read by applying a voltage between the first conductive layer and the second conductive layer and reading the resistance value of the organic compound layer. For example, when reading information from the memory cell 206 in the m-th column and the n-th row from a plurality of memory cells 206 included in the memory cell array 202, first, the decoder 203 and the selector 204 use the bit line Bm in the m-th column, The word line Wn in the nth row is selected. Then, a voltage is applied to the gate electrode of the transistor 207 included in the memory cell 206 arranged in the m-th column and the n-th row.

Here, the memory element 208 included in the memory cell 206 and the resistance element 211 are connected in series. At this time, the memory element 208 can be regarded as one resistance element, and thus a predetermined voltage is applied to both ends of two resistance elements connected in series, Vread and the common electrode 401 in FIG. When applied, the potential of the node α becomes a potential divided by the memory element 208 and the resistance element 211. Here, when a voltage is applied to Vread, no voltage is applied to Vwrite, and measures are taken to prevent current from flowing in the reverse direction by a circuit outside the figure. To do.

The electric resistance of the memory element of the organic memory is changed by writing information by light, heat, or electrical action. Therefore, since the electrical resistance of the memory element to which information is written is different from the electrical resistance of the memory element to which information is not written, the potential of the node α is either written or not written to the memory element. It takes different values depending on the difference between

The potential of the node α is supplied to the sense amplifier 212. The sense amplifier 212 compares the reference potential (Vref) with the potential of the node α to determine information included in the memory element 208. Thereafter, a signal including information determined by the sense amplifier 212 is supplied to the outside of the organic memory.

In the above method, the voltage value is read using the difference in resistance value and the resistance division of the memory element 208. However, this is only an example, and information stored in the memory element 208 is obtained using another mechanism. It can also be read. Other mechanisms include a method of reading information by comparing current values, a method of reading information by precharging the bit line Bm, and comparing changes in the potential of the bit line Bm, and the like. It is not limited to these.

As described above, the semiconductor device of the present invention including an organic memory can write information after manufacturing by light, heat, or electrical action. Therefore, in the present invention, an easy-to-use semiconductor device can be provided.

Note that this embodiment can be freely combined with any of the other embodiments and examples in this specification.

(Embodiment 2)
In this embodiment mode, steps for manufacturing the transistor included in the memory cell 206 and the memory element 208 are shown in the order of FIGS. 9, 10, 11, 12, and 3.

The semiconductor device manufactured on the glass substrate may be used as it is for the semiconductor device of the present invention. However, in order to add a functional added value, the semiconductor device manufactured on the substrate is peeled off and used as another flexible substrate. You may stick together. Thus, in this embodiment, a case where a flexible semiconductor device is formed by using a separation process is described. Note that in this specification, a method for peeling from a substrate and bonding to another substrate is referred to as a peeling process.

First, the separation layer 503 is formed on one surface of the substrate 502 (FIG. 9A). As the substrate 502, a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate with an insulating layer formed on one surface, a heat-resistant plastic substrate that can withstand the processing temperature in this step, or the like is preferably used. Note that in this step, the separation layer 503 is provided over the entire surface of the substrate 502. However, if necessary, the separation layer 503 is provided over the entire surface of the substrate 502, and then selectively provided by patterning using a photolithography method. May be. In addition, the peeling layer 503 is formed so as to be in contact with the substrate 502, but if necessary, an insulating layer serving as a base is formed so as to be in contact with the substrate 502, and the peeling layer 503 is formed so as to be in contact with the insulating layer. May be. By selectively providing the peeling layer 503, scattering of the semiconductor element and the like after peeling can be prevented.

The separation layer 503 is formed by sputtering, plasma CVD, or the like using tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium. An element selected from (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), lead (Pd), osmium (Os), iridium (Ir), silicon (Si) or the element as a main component It can be formed using a layer made of an alloy material or a compound material. Note that the structure of the separation layer 503 can be a single layer formed of the above materials or a stack including any one of the above materials. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline.

In the case where the separation layer 503 has a single-layer structure, for example, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is formed. Alternatively, a layer containing tungsten oxide or oxynitride, a layer containing molybdenum oxide or oxynitride, or a layer containing oxide or oxynitride of a mixture of tungsten and molybdenum is formed. Note that the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. The oxide of tungsten may be expressed as tungsten oxide.

In the case where the separation layer 503 has a stacked structure, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is formed as a first layer, and an oxide or nitride of tungsten, molybdenum, or a mixture of tungsten and molybdenum is formed as a second layer Forming an oxide, oxynitride or nitride oxide.

Note that in the case where a layered structure of a layer containing tungsten and a layer containing an oxide of tungsten is formed as the separation layer 503, a layer containing tungsten is formed, and a layer containing silicon oxide is formed thereover. The fact that a layer containing an oxide of tungsten is formed at the interface between the layer and the silicon oxide layer may be utilized. The same applies to the case where a layer containing tungsten nitride, oxynitride, and nitride oxide is formed. After a layer containing tungsten is formed, a silicon nitride layer, a silicon oxynitride layer, and a silicon nitride oxide layer are formed thereon. A layer may be formed. The oxide of tungsten is represented by WOx, X is 2 to 3, X is 2 (WO ₂ ), X is 2.5 (W ₂ O ₅ ), and X is 2.75. (W ₄ O ₁₁ ) and X is 3 (WO ₃ ). In forming the tungsten oxide, there is no particular limitation on the value of X mentioned above, and it is preferable to determine which oxide is formed based on the etching rate or the like. Note that the best etching rate is a layer containing tungsten oxide (WOx, 0 <X <3) formed by a sputtering method in an oxygen atmosphere. Therefore, in order to shorten the manufacturing time, a layer containing a tungsten oxide is preferably formed as the separation layer 503 by a sputtering method in an oxygen atmosphere.

Note that in the case where a semiconductor device manufactured over a substrate such as glass is formed and used without using a peeling process, the peeling layer 503 is not formed, and the semiconductor device can be manufactured from the process described below.

Next, an insulating layer 504 serving as a base is formed so as to cover the separation layer 503. The insulating layer 504 is formed as a single layer or a stacked layer including a silicon oxide or a silicon nitride by a sputtering method, a plasma CVD method, or the like. The silicon oxide material is a substance containing silicon (Si) and oxygen (O), and corresponds to silicon oxide, silicon oxynitride, silicon nitride oxide, or the like. The silicon nitride material is a substance containing silicon and nitrogen (N), and corresponds to silicon nitride, silicon oxynitride, silicon nitride oxide, or the like. In the case where the base insulating layer 504 has a two-layer structure, for example, a silicon nitride oxide layer may be formed as a first layer and a silicon oxynitride layer may be formed as a second layer. When the base insulating layer 504 has a three-layer structure, a silicon oxide layer is formed as a first insulating layer, a silicon nitride oxide layer is formed as a second insulating layer, and an oxide is formed as a third insulating layer. A silicon nitride layer may be formed. Alternatively, a silicon oxynitride layer may be formed as the first insulating layer, a silicon nitride oxide layer may be formed as the second insulating layer, and a silicon oxynitride layer may be formed as the third insulating layer. The insulating layer 504 serving as a base functions as a blocking film that prevents intrusion of impurities from the substrate 502, and thus preferably includes a silicon nitride material.

Next, an amorphous semiconductor layer 505 (eg, a layer containing amorphous silicon) is formed over the insulating layer 504. The amorphous semiconductor layer 505 is formed with a thickness of 25 to 200 nm (preferably 30 to 150 nm) by a sputtering method, an LPCVD method, a plasma CVD method, or the like. Subsequently, the amorphous semiconductor layer 505 is crystallized (laser crystallization, thermal crystallization using an RTA or furnace annealing furnace, thermal crystallization using a metal element that promotes crystallization, and crystallization is promoted. The crystalline semiconductor layer is formed by crystallization by a combination of a thermal crystallization method using a metal element and a laser crystallization method. After that, the obtained crystalline semiconductor layer is patterned into a desired shape to form crystalline semiconductor layers 706 to 710 (FIG. 9B).

An example of a manufacturing process of the crystalline semiconductor layers 706 to 710 will be briefly described below. First, an amorphous semiconductor layer having a thickness of 66 nm is formed by a plasma CVD method. Next, after a solution containing nickel, which is a metal element for promoting crystallization, is held on the amorphous semiconductor layer, the amorphous semiconductor layer is subjected to dehydrogenation treatment (500 ° C., 1 hour), heat Crystallization treatment (550 ° C., 4 hours) is performed to form a crystalline semiconductor layer. Thereafter, laser light is irradiated as necessary, and crystalline semiconductor layers 706 to 710 are formed by a patterning process using a photolithography method. When the crystalline semiconductor layer is formed by a laser crystallization method, a continuous wave or pulsed gas laser or solid-state laser is used. As the gas laser, excimer laser, YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, glass laser, ruby laser, Ti: sapphire laser, or the like is used. As the solid-state laser, a laser using a crystal such as YAG, YVO ₄ , YLF, or YAlO ₃ doped with Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm can be used.

In addition, when an amorphous semiconductor layer is crystallized using a metal element that promotes crystallization, there is an advantage that crystallization can be performed in a short time at a low temperature and the crystal directions are aligned. On the other hand, since the metal element remains in the crystalline semiconductor layer, there is a disadvantage that the off-current increases and the characteristics are not stable. Therefore, an amorphous semiconductor layer functioning as a gettering site is preferably formed over the crystalline semiconductor layer. Since the amorphous semiconductor layer serving as a gettering site needs to contain an impurity element such as phosphorus or argon, it is preferably formed by a sputtering method in which argon can be contained at a high concentration. After that, heat treatment (RTA method or thermal annealing using a furnace annealing furnace) is performed to diffuse the metal element in the amorphous semiconductor layer, and then the amorphous semiconductor layer containing the metal element is removed. To do. Then, the content of the metal element in the crystalline semiconductor layer can be reduced or removed.

Next, a gate insulating layer 705 is formed to cover the crystalline semiconductor layers 706 to 710. The gate insulating layer 705 is formed by a single layer or a stack of layers containing silicon oxide or silicon nitride by a plasma CVD method or a sputtering method. Specifically, a layer containing silicon oxide, a layer containing silicon oxynitride, or a layer containing silicon nitride oxide is formed as a single layer or a stacked layer.

Next, a lower conductive layer and an upper conductive layer are stacked over the gate insulating layer 705. The lower conductive layer is formed with a thickness of 20 to 100 nm by a plasma CVD method or a sputtering method. The upper conductive layer is formed with a thickness of 100 to 400 nm by a plasma CVD method or a sputtering method. The lower conductive layer and the upper conductive layer are made of tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium (Nd), etc. A selected element or an alloy material or a compound material containing these elements as a main component is formed. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus is used. Examples of the combination of the lower conductive layer and the upper conductive layer include a tantalum nitride (TaN) layer and a tungsten (W) layer, a tungsten nitride (WN) layer and a tungsten layer, a molybdenum nitride (MoN) layer and a molybdenum (Mo) layer. Etc. Since tungsten and tantalum nitride have high heat resistance, heat treatment for thermal activation can be performed after the lower conductive layer and the upper conductive layer are formed. In the case of a three-layer structure instead of a two-layer structure, a stacked structure of a molybdenum layer, an aluminum layer, and a molybdenum layer may be employed.

Next, a mask made of resist (resist mask) is formed using a photolithography method, and an etching process for forming a gate electrode and a gate line is performed on the lower conductive layer and the upper conductive layer. Are formed as conductive layers (also simply referred to as gate electrode layers) 716 to 725. At this time, depending on the difference in etching rate between the lower conductive layer and the upper conductive layer, the shape of each conductive layer, particularly its taper angle, can be varied.

In order to improve the performance of the thin film transistor, the width of the gate electrode is preferably shortened. In this case, the gate electrode may be patterned after etching a resist mask or the like for patterning the gate electrode with oxygen plasma or the like.

Next, a resist mask is formed by photolithography, and an impurity element imparting N-type is added to the crystalline semiconductor layers 706 and 708 to 710 at a low concentration by ion doping or ion implantation. N-type impurity regions 711 and 713 to 715 and channel formation regions 780 and 782 to 784 are formed. The impurity element imparting N-type may be an element belonging to Group 15, for example, phosphorus (P) or arsenic (As).

Next, a resist mask is formed by photolithography, and an impurity element imparting p-type conductivity is added to the crystalline semiconductor layer 707, so that a p-type impurity region 712 and a channel formation region 781 are formed. For example, boron (B) is used as the impurity element imparting P-type.

Next, an insulating layer is formed so as to cover the gate insulating layer 705 and the conductive layers 716 to 725. The insulating layer is formed by a single layer or a stack of layers containing an inorganic material such as silicon, silicon oxide, or silicon nitride, or an organic material such as an organic resin, by a plasma CVD method or a sputtering method. To do. Next, the insulating layer is selectively etched by anisotropic etching mainly in the vertical direction to form insulating layers (also referred to as sidewalls) 739 to 743 that are in contact with the side surfaces of the conductive layers 716 to 725 (see FIG. 9 (C)). Simultaneously with the formation of the insulating layers 739 to 743, insulating layers 734 to 738 in which the gate insulating layer 705 is etched are formed. The insulating layers 739 to 743 can be used as a mask for doping when an LDD (Lightly Doped Drain) region is formed later.

Next, an impurity element imparting N-type conductivity is added to the crystalline semiconductor layers 706 and 708 to 710 using a resist mask formed by a photolithography method and the insulating layers 739 to 743 as masks, so that the first N Type impurity regions (also referred to as LDD regions) 727, 729, 731, and 733 and second N type impurity regions (also referred to as source / drain regions) 726, 728, 730, and 732 are formed. The concentration of the impurity element contained in the first N-type impurity regions 727, 729, 731, and 733 is lower than the concentration of the impurity element in the second N-type impurity regions 726, 728, 730, and 732. Through the above steps, N-type thin film transistors 744 and 746 to 748 and a P-type thin film transistor 745 are completed.

In order to form the LDD region, the gate electrode has a laminated structure of two or more layers, anisotropic etching is performed on the gate electrode, and doping is performed using the lower conductive layer constituting the gate electrode as a mask. There is a method of performing doping and a method of performing doping using an insulating layer of a sidewall as a mask. A thin film transistor formed by adopting the former method has a structure in which an LDD region is disposed so as to overlap a gate electrode with a gate insulating film interposed therebetween. Since this structure uses anisotropic etching of the gate electrode, it is difficult to control the width of the LDD region, and the LDD region may not be formed unless the etching process is performed well. On the other hand, the latter method using the sidewall insulating layer as a mask is easier to control the width of the LDD region than the former method, and the LDD region can be formed reliably.

Next, an insulating layer is formed as a single layer or a stacked layer so as to cover the thin film transistors 744 to 748 (FIG. 10A). The insulating layer covering the thin film transistors 744 to 748 is formed of an inorganic material such as silicon oxide or silicon nitride, polyimide, polyamide, benzocyclobutene, acrylic, epoxy, siloxane, or the like by an SOG method or a droplet discharge method. A single layer or a stacked layer is formed using an organic material or the like. Siloxane has a skeleton structure formed of a bond of silicon and oxygen. As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. For example, when the insulating layer covering the thin film transistors 744 to 748 has a three-layer structure, a layer containing silicon oxide is formed as the first insulating layer 749, and a layer containing resin is formed as the second insulating layer 750, A layer containing silicon nitride is preferably formed as the third insulating layer 751.

Note that before the insulating layers 749 to 751 are formed or after one or more thin films of the insulating layers 749 to 751 are formed, the crystallinity of the semiconductor layer is restored and the activity of the impurity element added to the semiconductor layer is increased. Heat treatment for the purpose of hydrogenation of the semiconductor layer is preferably performed. For the heat treatment, thermal annealing, laser annealing, RTA, or the like is preferably applied.

Next, the insulating layers 749 to 751 are etched by photolithography to form contact holes that expose the N-type impurity regions 726 and 728 to 732 and the P-type impurity region 785. Subsequently, a conductive layer is formed so as to fill the contact hole, and the conductive layer is patterned to form conductive layers 752 to 761 functioning as source / drain wirings.

The conductive layers 752 to 761 are made of an element selected from titanium (Ti), aluminum (Al), and neodymium (Nd) by a plasma CVD method or a sputtering method, or an alloy material or a compound material containing these elements as main components. A single layer or a stacked layer is formed. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. The conductive layers 752 to 761 include, for example, a stacked structure of a barrier layer, an aluminum silicon (Al—Si) layer, and a barrier layer, and a stacked structure of a barrier layer, an aluminum silicon (Al—Si) layer, a titanium nitride (TiN) layer, and a barrier layer. A structure should be adopted. Note that the barrier layer corresponds to a thin film formed of titanium, a nitride of titanium, molybdenum, or a nitride of molybdenum. Aluminum and aluminum silicon are optimal materials for forming the conductive layers 752 to 761 because they have low resistance and are inexpensive. In addition, when an upper layer and a lower barrier layer are provided, generation of hillocks of aluminum or aluminum silicon can be prevented. In addition, when a barrier layer made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor layer, the natural oxide film is reduced, and the crystalline semiconductor layer is excellent. Contact can be made.

Next, an insulating layer 762 is formed so as to cover the conductive layers 752 to 761 (FIG. 10B). The insulating layer 762 is formed as a single layer or a stacked layer using an inorganic material or an organic material by an SOG method, a droplet discharge method, or the like. The insulating layer 762 is preferably formed with a thickness of 0.75 to 3 μm.

Subsequently, the insulating layer 762 is etched by photolithography to form contact holes that expose the conductive layers 757, 759, and 761. Subsequently, a conductive layer is formed so as to fill the contact hole. The conductive layer is formed using a conductive material by a plasma CVD method or a sputtering method. Next, the conductive layer is patterned to form conductive layers 763 to 765. Note that the conductive layers 763 to 765 correspond to a first conductive layer of a pair of conductive layers included in the memory element. Therefore, the conductive layers 763 to 765 are preferably formed as a single layer or a stacked layer using titanium, or an alloy material or compound material containing titanium as a main component. Since titanium has a low resistance value, it leads to a reduction in the size of the memory element, and high integration can be realized. In the etching step for forming the conductive layers 763 to 765, wet etching may be performed in order to prevent damage to the thin film transistors 744 to 748, and the etching agent may be hydrogen fluoride (HF) or Ammonia hydrogen peroxide may be used.

Next, an insulating layer 766 is formed so as to cover the conductive layers 763 to 765. The insulating layer 766 is formed as a single layer or a stacked layer using an inorganic material or an organic material by an SOG method, a droplet discharge method, or the like. The insulating layer 766 is preferably formed with a thickness of 0.75 μm to 3 μm. Subsequently, the insulating layer 766 is etched by photolithography to form contact holes 767 to 769 that expose the conductive layers 763 to 765.

Next, a conductive layer 786 functioning as an antenna is formed in contact with the conductive layer 765 (FIG. 11A). The conductive layer 786 is formed using a conductive material by a plasma CVD method, a sputtering method, a printing method, or a droplet discharge method. Preferably, the conductive layer 786 is an element selected from aluminum (Al), titanium (Ti), silver (Ag), and copper (Cu), or an alloy material or a compound material containing these elements as a main component. It is formed by layer or lamination. Specifically, the conductive layer 786 is formed by a screen printing method using a paste containing silver, and then heat-treated at 50 to 350 degrees. Alternatively, an aluminum layer is formed by a sputtering method, and the aluminum layer is formed by patterning. For the pattern processing of the aluminum layer, wet etching processing may be used, and after the wet etching processing, heat treatment at 200 to 300 degrees may be performed.

Further, in the case where the antenna is manufactured over another substrate and attached later, a wiring for connecting the antenna is formed instead of forming the antenna.

Next, the organic compound layer 303 is formed so as to be in contact with the conductive layers 763 and 764 (FIG. 11B). The organic compound layer 303 is formed by a droplet discharge method, an evaporation method, or the like. Subsequently, a second conductive layer 304 is formed so as to be in contact with the organic compound layer 303. The second conductive layer 304 is formed by a sputtering method, an evaporation method, or the like.

Each memory element 208 corresponds to a stacked body of a first conductive layer (conductive layers 763 and 764), an organic compound layer 303, and a second conductive layer 304, and an insulating layer is provided between adjacent memory elements 208. 305 is provided. As a material of the organic compound layer 303 of the memory element 208, an organic compound whose electric resistance is changed by irradiation with light, heating, or application of an electric action is used.

Among organic substances whose electrical resistance can be changed by irradiating light, heating, or applying an electrical action, as an organic compound having a high hole transporting property, for example, 4,4′-bis [N -(1-Naphthyl) -N-phenyl-amino] -biphenyl (abbreviation: α-NPD) or 4,4′-bis [N- (3-methylphenyl) -N-phenyl-amino] -biphenyl (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenyl-amino) -triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) ) -N-phenyl-amino] -triphenylamine (abbreviation: MTDATA) and 4,4'-bis (N- (4- (N, N-di-m-tolylamino) phenyl) -N-phenylamino) biphenyl (Abbreviation: DNTPD) Family amine (i.e., a benzene ring - having nitrogen bond) compounds and phthalocyanine comprising _{(abbreviation:} H 2 Pc), copper phthalocyanine (abbreviation: CuPc), or vanadyl phthalocyanine (abbreviation: VOPc), and there is a phthalocyanine compound such as.

In addition, among organic substances that can change electrical resistance by irradiating light, heating, or applying an electrical action, an organic compound having a high electron transporting property is, for example, tris (8-quinolinolato) aluminum. (Abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl) -8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq) such as a metal complex having a quinoline skeleton or a benzoquinoline skeleton, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn _(BOX) 2), bis [2- (2-hydroxyphenyl) Benzochiazora Zinc: oxazole (such as abbreviated Zn _{(BTZ) 2),} materials such as a metal complex having a thiazole ligand can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5- ( 4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2, There are compounds such as 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like.

Other examples of the organic compound that can be used as the material of the organic compound layer 303 include 4-dicyanomethylene-2-methyl-6- (1,1,7,7-tetramethyljulolidyl-9-enyl). -4H-pyran (abbreviation: DCJT), 4-dicyanomethylene-2-t-butyl-6- (1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran, periflanthene, 2 , 5-dicyano-1,4-bis (10-methoxy-1,1,7,7-tetramethyljulolidyl-9-enyl) benzene, N, N′-dimethylquinacridone (abbreviation: DMQd), coumarin 6 , Coumarin 545T, Tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), 9,9′-bianthryl, 9,10-diphenylanthracene (abbreviation: DPA) and 9,10-bis (2-naphthyl) anthracene (abbreviation: DNA), 2,5,8,11-tetra-t-butylperylene (abbreviation: TBP), and the like can be given. As a base material for forming a layer in which the light emitting material is dispersed, an anthracene such as 9,10-di (2-naphthyl) -2-tert-butylanthracene (abbreviation: t-BuDNA) is used. Derivatives, carbazole derivatives such as 4,4′-bis (N-carbazolyl) biphenyl (abbreviation: CBP), bis [2- (2-hydroxyphenyl) pyridinato] zinc (abbreviation: Znpp ₂ ), bis [2- (2 Metal complexes such as -hydroxyphenyl) benzoxazolate] zinc (abbreviation: ZnBOX) can be used. In addition, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), 9,10-bis (2-naphthyl) anthracene (abbreviation: DNA), bis (2-methyl-8-quinolinolato) -4-phenylphenolato- And aluminum (abbreviation: BAlq).

As a material of the organic compound layer 303, for example, a conjugated polymer doped with a compound that generates an acid by absorbing light (a photoacid generator) can be used. Here, polyacetylenes, polyphenylene vinylenes, polythiophenes, polyanilines, polyphenylene ethynylenes, and the like can be used as the conjugated polymer. As the photoacid generator, arylsulfonium salts, aryliodonium salts, o-nitrobenzyl tosylate, arylsulfonic acid p-nitrobenzyl esters, sulfonylacetophenones, Fe-allene complex PF6 salts and the like can be used.

Alternatively, a layer in which a metal oxide or a metal nitride is mixed in the material of the organic compound layer 303 or a layer in which these layers are stacked may be used. More preferably, any transition metal oxide of Groups 4 to 12 of the periodic table may be used. For example, vanadium oxide, molybdenum oxide, rhenium oxide, tungsten oxide, ruthenium oxide, titanium oxide, chromium oxide, zirconium oxide, hafnium oxide, and tantalum oxide are suitable.

By using a layer in which an organic compound and a metal oxide are mixed, or by laminating them, crystallization of the organic compound layer can be suppressed, and the organic compound layer is formed thick without increasing resistance. It becomes possible to do. Therefore, even if there are irregularities due to dust or dirt on the substrate, the organic compound layer is hardly affected by the irregularities due to the thick film. Accordingly, it is possible to prevent a defect such as a short circuit due to unevenness. Even when the organic memory is mounted on a flexible substrate, it is possible to resist physical stress such as bending by forming the memory element layer thick.

The organic compound mentioned here is an example, and the present invention is not limited to this. In addition, the organic compound layer 303 may have a single-layer structure of an organic compound as described above, or a structure in which any of them is stacked.

Next, the second conductive layer 304 will be described. The second conductive layer 304 is formed in a linear shape as in the example shown in FIG. Since the second conductive layer is formed on the same plane as the plane on which the antenna is formed or on a plane parallel to it, when formed on a wide plane, an eddy current is generated inside by an electromagnetic wave emitted from the reader / writer, Absorbs the electromagnetic wave and inhibits wireless communication. However, by forming the second conductive layer 304 in a linear shape, generation of eddy current can be prevented and absorption of electromagnetic waves can be reduced. Therefore, wireless communication performed by the semiconductor device is not hindered and the communication distance becomes long.

In the case where information is written into the memory element using light, one or both of the first conductive layer (conductive layers 763 and 764) and the second conductive layer 304 have a light-transmitting property; To do. For example, as illustrated in FIG. 11B, when light is irradiated from the arrow A, at least the second conductive layer 304 needs to have a light-transmitting property. In order to form a light-transmitting conductive layer, a transparent conductive material is used, or a non-transparent conductive material is formed to a thickness through which light is transmitted. Examples of the transparent conductive material include indium tin oxide (ITO, Indium Tin Oxide), zinc oxide (ZnO), indium zinc oxide (IZO), zinc oxide added with gallium (GZO), and the like. Although there exists another translucent oxide electrically conductive material, it is not limited to this. In addition, a zinc oxide containing silicon oxide, an indium tin oxide containing silicon oxide (hereinafter referred to as ITSO), and a target formed by mixing 2 to 20 w% zinc oxide (ZnO) with ITSO are used. Can be used. In addition, as a non-translucent material, titanium nitride and aluminum are the main components in addition to a single layer film made of one or more of TiN, ZrN, Ti, W, Ni, Pt, Cr, Ag, Al and the like. And a three-layer structure of a titanium nitride film, a film mainly composed of aluminum, and a titanium nitride film.

Note that the organic compound layer 303 is formed after the conductive layer 786 functioning as an antenna is formed as described above because the heat resistance of the organic compound is generally low. However, in the case where the semiconductor device of the present invention is manufactured using an organic compound with high heat resistance, a step of forming a conductive layer 786 functioning as an antenna can be performed after the organic compound layer 303 is formed.

Next, an insulating layer 772 functioning as a protective layer is formed by an SOG method, a droplet discharge method, or the like so as to cover the memory element 208 and the conductive layer 786 functioning as an antenna. The insulating layer 772 is formed of a layer containing carbon such as DLC (diamond-like carbon), a layer containing silicon nitride, a layer containing silicon nitride oxide, or an organic material, and preferably formed of an epoxy resin.

Next, the insulating layer is etched by photolithography so that the separation layer 503 is exposed, so that openings 773 and 774 are formed (FIG. 12A).

Next, an etchant is introduced into the openings 773 and 774 to remove the peeling layer 503 (FIG. 12B). As the etchant, a gas or liquid containing halogen fluoride or an interhalogen compound is used. For example, chlorine trifluoride (ClF ₃ ) is used as a gas containing halogen fluoride. Then, the thin film integrated circuit 791 is peeled from the substrate 502. Note that the thin film integrated circuit 791 includes the thin film transistors 744 to 748 and the memory element 208, and a conductive layer 786 functioning as an antenna. Note that a part of the peeling layer 503 may be left without being completely removed. By doing so, the processing time can be shortened. Further, scattering of the thin film integrated circuit 791 can be prevented.

The substrate 502 from which the thin film integrated circuit 791 has been peeled is preferably reused for cost reduction. Further, the insulating layer 772 can prevent the thin film integrated circuit 791 from being scattered after the separation layer 503 is removed. Since the thin film integrated circuit 791 is small and thin, the thin film integrated circuit 791 is likely to be scattered after the peeling layer 503 is removed because it is not in close contact with the substrate 502. However, by forming the insulating layer 772 over the thin film integrated circuit 791, the thin film integrated circuit 791 is weighted and scattering from the substrate 502 can be prevented. In addition, although the thin film integrated circuit 791 is thin and light, the insulating layer 772 is formed, so that a certain shape of strength can be secured without forming a wound shape.

Next, one surface of the thin film integrated circuit 791 is adhered to the first base 776 and completely peeled from the substrate 502 (FIG. 3). Subsequently, the other surface of the thin film integrated circuit 791 is bonded to the second substrate 775, and then one or both of heat treatment and pressure treatment are performed, so that the thin film integrated circuit 791 is bonded to the first substrate 776 and the first substrate 776. Sealing with the second substrate 775 is performed. The first substrate 776 and the second substrate 775 are a film made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, a paper made of a fibrous material, a base film (polyester, polyamide, inorganic vapor deposition film, Paper) and an adhesive synthetic resin film (acrylic synthetic resin, epoxy synthetic resin, etc.). The film is subjected to heat treatment and pressure treatment by thermocompression bonding. When the heat treatment and pressure treatment are performed, the film is an adhesive layer provided on the outermost layer of the film or the outermost layer. A layer (not an adhesive layer) provided in the outer layer is melted by heat treatment and bonded by pressure. In addition, an adhesive layer may be provided on the surfaces of the first base body 776 and the second base body 775, or the adhesive layer may not be provided. The adhesive layer corresponds to a layer containing an adhesive such as a thermosetting resin, an ultraviolet curable resin, an adhesive containing an epoxy resin, or a resin additive.

Through the above steps, a flexible semiconductor device can be manufactured.

Further, in the case where the semiconductor device manufactured over the substrate 502 is used as it is, the above-described peeling process after forming the openings 773 and 774 is not required.

In addition, when a wiring for connecting an antenna manufactured on another substrate is manufactured, it is necessary to expose the wiring for connecting the antenna to the outermost surface.

Note that in this embodiment, the transistor is formed using a thin film transistor in which a thin film material is used for an active layer; however, the present invention is not limited to this. In addition, the gate electrode of the thin film transistor may be provided in the upper layer of the semiconductor film, or may have a structure provided in the lower layer.

As described above, the organic memory has a simple configuration in which an organic compound layer provided between a pair of conductive layers is provided. Furthermore, the semiconductor device of the present invention can be manufactured using an inexpensive material such as a glass substrate or a flexible substrate. Therefore, the semiconductor device of the present invention has a simple manufacturing process and can be manufactured at low cost.

Furthermore, a plurality of semiconductor devices according to the present invention can be provided at a lower cost by using so-called multiple chamfering, in which a plurality of semiconductor devices are formed on a substrate with a large area and then completed by dividing. Examples of the large-area substrate used at this time include a glass substrate and a flexible substrate. A glass substrate, a flexible substrate, or the like is not limited in the shape of the base substrate as compared with a circular silicon substrate. Therefore, the productivity of semiconductor devices can be increased and mass production can be performed. As a result, cost reduction of the semiconductor device can be expected, and a semiconductor device with a very low unit price can be provided.

Note that this embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 3)
Next, a shape example in which the common electrode of the organic memory built in the semiconductor device of the present invention is formed in a linear shape and an example of a manufacturing method will be described. The term “linear” refers to a square having a longer second side than the first side, an ellipse having a longer interfocal distance, and an elongated shape similar thereto. Since the common electrode is conductive in order to apply the same potential to one end of all the memory elements, it is preferable to form the square or ellipse on the comb, for example, as shown in FIG. . However, the shape of a line is not limited to the examples given here as long as the absorption of electromagnetic waves due to generation of eddy currents can be reduced. Furthermore, the formation of the common electrode 401 is only required to reduce the absorption of electromagnetic waves due to the generation of the eddy current, and does not require high processing accuracy.

5A to 5D show the substrate from the direction of arrow A in FIG. FIG. 5A shows a common electrode formed in a comb shape. FIG. 5B shows a case where the common electrodes are formed in a plurality of linear shapes and are electrically connected by contacts. FIG. 5C shows a common electrode formed by connecting elongated rectangles to an uneven shape, and the long side thereof is provided in parallel to the decoder 203. FIG. 5D shows a common electrode formed in a ladder shape. Thus, the common electrode 401 having a linear shape can be manufactured in various shapes.

The common electrode can be manufactured by various methods.

For example, when the common electrode 401 is vapor-deposited on the substrate, a method of forming a linear shape can be used. In this method, a metal plate having a hole in the shape of the common electrode to be formed is adjacent to the substrate from the direction of arrow A in FIG. In the present specification, the metal plate is referred to as a metal mask.

The method of forming the common electrode in a linear shape using a metal mask is inferior in processing accuracy compared to a method such as photolithography. However, the accuracy of forming the common electrode is sufficient to the extent that wireless communication performed by the wireless tag is not hindered. For example, the line width of the common electrode manufactured using a metal mask is 10 μm or less, and preferably 2 to 4 μm.

A method for manufacturing a common electrode using a metal mask can be easily performed because the number of steps is smaller than that of photolithography. In addition, there is an advantage that the characteristics of other layers previously formed on the substrate are not adversely affected. Of course, the common electrode may be formed in a linear shape by using a photolithography method.

As shown in FIG. 5B, a contact hole 501 may be provided between the layer for forming the common electrode and the lower conductive layer, and the common electrode may be made conductive by the lower conductive layer. Further, the direction in which the line extends when the common electrode is formed in a linear shape is not limited to FIG.

In addition, a droplet discharge method can be used as a method for manufacturing the common electrode. The droplet discharge method is a general term for a method for producing a pattern by discharging droplets, such as an inkjet method or a dispenser method.

In the case of using a droplet discharge method, the common wiring can be formed in a linear shape as illustrated in FIG. Although the droplet discharge method does not have high processing accuracy, it is sufficient as accuracy for manufacturing the common electrode to the extent that wireless communication performed by the wireless tag of the wireless tag is not hindered and can be easily performed. For example, the line width of the common electrode produced by the droplet discharge method is 40 μm or less, and preferably 10 to 20 μm.

The production of the common electrode by the droplet discharge method has an advantage that the number of steps can be reduced and materials are not wasted.

The above-described method for manufacturing the common electrode is merely an example, and is not limited thereto.

This embodiment can be freely combined with any of the other embodiments and embodiments described in this specification.

In this embodiment mode, a method for manufacturing an antenna included in the semiconductor device of the present invention will be described.

The semiconductor device of the present invention is characterized in that information can be read and written without contact. There are three types of information transmission / reception methods: an electromagnetic coupling method in which a pair of coils are arranged facing each other to communicate by mutual induction, an electromagnetic induction method in which communication is performed by an induction electromagnetic field, and a radio wave method in which communication is performed using radio waves. However, any method may be used.

An antenna used for transmitting and receiving information can be provided by various methods. For example, a substrate on which a plurality of elements constituting the power supply circuit 103, the clock generation circuit 104, the demodulation circuit 111, the modulation circuit 112, the instruction analysis unit 113, the memory control circuit 114, the encoding circuit 115, and the memory 108 are manufactured. The antenna 102 is provided on the same substrate. In the present specification, the plurality of elements are referred to as an element group.

As shown in FIG. 6A and a cross-sectional view thereof, when the antenna 102 is provided over the substrate over which the element group 601 is formed, the antenna 102 functions as the same layer as the second conductive layer 304 of the memory element. A conductive layer can be provided.

However, the present invention is not limited to the above structure, and the antenna 102 may be provided in the same layer as the first conductive layer 302 of the memory element. Further, an insulating film may be provided so as to cover the element group 601, and the antenna 102 may be provided over the insulating film.

As another method for manufacturing the antenna, as illustrated in FIG. 6B and a cross-sectional view thereof, a wiring 110 for connecting the antenna is provided in the semiconductor device 101, which is different from the element group 601. There is a method in which the antenna 102 manufactured in the process is electrically connected to the wiring 110.

In the case where the antenna 102 is formed over another substrate 602 and is electrically connected, a wiring 110 for connecting the antenna is provided over the substrate 306. For example, the wiring 110 for connecting the antenna is provided in the same layer as the second conductive layer 304, and the wiring 110 for electrically connecting the antenna and the antenna 102 are attached to each other. For the bonding, an anisotropic conductive film 603 or the like is used, but the present invention is not limited to this.

In order to bond the substrate 306 on which the element group 601 is manufactured and the substrate 602 on which the antenna 102 is manufactured to fill the gap, a resin 604 can be used.

As a method for manufacturing the antenna 102 over the separate substrate 602, a droplet discharge method can be used with a conductive paste containing nanoparticles such as gold, silver, and copper. The droplet discharge method is a general term for a method of forming a pattern by discharging droplets, such as an inkjet method or a dispenser method, and has an advantage that the utilization efficiency of a material can be improved.

Other methods for manufacturing the antenna 102 include a screen printing method, plating (plating), and a method of processing a conductive layer deposited on a substrate by photolithography. The shape of the antenna 102 varies depending on a method for transmitting and receiving information and a use of a semiconductor device. Therefore, a method corresponding to the antenna to be manufactured is used. In addition, the method for manufacturing the antenna described here is merely an example, and the present invention is not limited to this.

Note that the antenna to be formed is provided on a plane, and wireless communication with the reader / writer is affected by a metal surface parallel to the plane on which the antenna is provided and a highly conductive material surface. This is because the highly conductive substance absorbs electromagnetic waves emitted from the reader / writer. Therefore, the substrate over which the element group 601 and the antenna 102 are formed is preferably formed using an insulating substrate such as a glass substrate or a flexible substrate rather than a metal or semiconductor substrate.

Further, the second conductive layer 304, that is, the common electrode is formed in a linear shape. This is because, when the common electrode is formed in a linear shape, absorption of electromagnetic waves emitted from the reader / writer can be suppressed and a communication distance can be secured. Thus, the present invention can provide a semiconductor device having a long communication distance.

This example can be freely combined with the above embodiment mode.

In this embodiment, an example of manufacturing a semiconductor element included in the semiconductor device of the present invention is shown.

The element group 601 of the semiconductor device 101 of the present invention includes a large number of semiconductor elements such as transistors and capacitors.

As a semiconductor element in the circuit, any semiconductor such as an amorphous semiconductor, a microcrystalline semiconductor, a polycrystalline semiconductor, and an organic semiconductor may be used as an active layer. However, in order to obtain a semiconductor element with good characteristics, a metal element is used. It is preferable to use an active layer crystallized by using a catalyst or an active layer crystallized by a laser irradiation method. Further, a semiconductor layer formed by plasma CVD using SiH ₄ and F ₂ gas, SiH ₄ and H ₂ gas (Ar gas), or a semiconductor layer that has been subjected to laser irradiation may be used as the active layer. .

Further, as an active layer of a semiconductor element in a circuit, a crystalline semiconductor layer (low-temperature polysilicon layer) crystallized at a temperature of 200 to 600 degrees (preferably 350 to 500 degrees), or a temperature of 600 degrees or more A crystalline semiconductor layer (high-temperature polysilicon layer) crystallized in (1) can be used. Note that when a high-temperature polysilicon layer is formed on a substrate, a quartz substrate is preferably used because a glass substrate is vulnerable to heat.

A concentration of 1 × 10 ¹⁹ atoms / cm ³ to 1 × 10 ²² atoms / cm ³ , preferably 1 × 10 ¹⁹ atoms / cm ^{3 to} 5 in the active layer (especially a channel formation region) of the semiconductor element in the circuit. By adding hydrogen or a halogen element at a concentration of × 10 ²⁰ atoms / cm ^3, an active layer with few defects and hardly cracks can be obtained.

In addition, the crystal forming the active layer of the semiconductor element in the circuit is preferably formed so as to have a crystal grain boundary extending in parallel with the carrier flow direction (channel length direction). Such an active layer may be formed using a continuous wave laser (which can be abbreviated as CWLC) or a pulse laser operating at 10 MHz or more, preferably 60 to 100 MHz.

The thickness of the active layer of the semiconductor element in the circuit is 20 nm to 200 nm, preferably 40 nm to 170 nm, and more preferably 50 nm to 150 nm. As a result, it is possible to provide a semiconductor element in which the active layer is hardly cracked even when it is bent.

In addition, the S value (subthreshold value) of the transistor in the circuit is preferably 0.35 V / dec or less (preferably 0.09 to 0.25 V / dec) and has a mobility of 10 cm ² / Vs or more. Such characteristics can be realized by forming the active layer with a continuous wave laser or a pulsed laser operating at 10 MHz or higher.

The transistors in the circuit are 9-stage ring oscillators that operate at a power supply voltage of 3 to 5 V, and desirably have characteristics of 1 MHz or more, preferably 10 MHz or more. Alternatively, the frequency characteristic per gate is 100 kHz or more, preferably 1 MHz or more.

In addition, since the semiconductor device of the present invention may be used by a human hand, a protective layer for preventing alkali metal contamination such as sodium (Na) contained in hand sweat is provided. Good. The protective layer may be provided so as to wrap the semiconductor element in the circuit or wrap the entire circuit. Thus, a semiconductor device with improved reliability without being contaminated can be provided.

Note that examples of the material for the protective layer include inorganic materials such as aluminum nitride, aluminum oxide, silicon nitride, silicon nitride oxide, and silicon oxynitride film. However, the substances listed here are merely examples, and the present invention is not limited to these.

The element group constituting the circuit may be provided over a plurality of layers. When producing an element group over a plurality of layers, an interlayer insulating film is used. As a material of the interlayer insulating film, a resin material such as an epoxy resin or an acrylic resin, a resin material such as a polyimide resin having transparency, An inorganic material such as a compound material obtained by polymerization of a polymer containing siloxane, a material containing a water-soluble homopolymer and a water-soluble copolymer, or the like may be used.

The compound material containing siloxane has a skeleton structure of a bond of silicon and oxygen. A substituent containing at least hydrogen as a substituent (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

When a circuit is configured with a multilayer structure, a low dielectric constant material may be used as a material for the interlayer insulating film in order to reduce parasitic capacitance generated between the layers. If the parasitic capacitance is reduced, high-speed operation is realized and low power consumption is realized.

The material of the interlayer insulation film mentioned here is only an example, and is not limited to these.

Wireless communication with a reader / writer performed by a semiconductor device including a semiconductor element manufactured in this way affects a metal surface parallel to an antenna provided on a plane and a highly conductive material surface. box office. This is because the highly conductive substance absorbs electromagnetic waves emitted from the reader / writer. Therefore, the substrate for manufacturing the semiconductor element or the antenna is preferably an insulating substrate such as a glass substrate or a flexible substrate rather than a metal or a semiconductor substrate.

Furthermore, the common electrode inside the organic memory built in the semiconductor device of the present invention is formed in a linear shape. This is because, when the common electrode is formed in a linear shape, absorption of electromagnetic waves emitted from the reader / writer can be suppressed and a communication distance can be secured. As described above, the present invention can provide a semiconductor device including a semiconductor element having a long communication distance and high performance.

This embodiment can be freely combined with any of the other embodiments and examples in this specification.

In this embodiment, a case where a flexible semiconductor device is formed by using a peeling process will be described.

The peeled element group 601 is attached to the flexible protective layer 701 and attached to the flexible protective layer 702 from which the antenna 102 or the like is manufactured, so that a semiconductor device is manufactured (FIG. 7A). )reference). Note that a flexible substrate corresponds to an example of the protective layer having flexibility.

A semiconductor device illustrated in the example of FIG. 7A includes a flexible protective layer 701, a flexible protective layer 702 including an antenna 102, and an element group 601 which is separated from a substrate by a separation process. Have. The antenna 102 manufactured over the protective layer 702 is electrically connected to the element group 601. In the illustrated configuration, the antenna 102 is manufactured only over the protective layer 702; however, the present invention is not limited to this configuration, and the antenna 102 may be manufactured over the protective layer 701. You may produce on the same board | substrate.

Note that when a film made of a silicon nitride film or the like is formed between the element group 601 and the protective layers 701 and 702, the element group 601 is wireless with improved reliability without being contaminated with an alkali metal or the like. Tags can be provided.

The antenna 102 is preferably silver, copper, or a metal plated with them. The element group 601 and the antenna 102 are connected to each other by performing UV treatment or ultrasonic treatment using an anisotropic conductive film. However, the present invention is not limited to this method, and various methods can be used.

A cross-sectional view of FIG. 7A is shown in FIG. The thickness of the element group 601 sandwiched between the protective layers 701 and 702 may be 5 μm or less, preferably 0.1 μm to 3 μm. Further, when the thickness when the protective layers 701 and 702 are overlapped is defined as d, the thickness of the protective layers 701 and 702 is preferably (d / 2) ± 30 μm, and more preferably (d / 2) ± 10 μm. And Furthermore, the area of the element group 601 is 5 mm square (25 mm ² ) or less, and desirably has an area of 0.3 mm square to 4 mm square (0.09 mm ^{2 to} 16 mm ² ).

Since the protective layers 701 and 702 are made of an organic resin material, the protective layers 701 and 702 have a strong characteristic against bending. In addition, an element group 601 which is manufactured over a glass substrate or the like and is separated from the substrate by a separation process has a stronger characteristic against bending than a semiconductor element manufactured over a single crystal semiconductor substrate such as silicon. Since the element group 601 and the protective layers 701 and 702 can be in close contact with each other so that there is no gap, the completed semiconductor device itself has a strong characteristic against bending. The element group 601 surrounded by such protective layers 701 and 702 may be arranged on the surface or inside of another solid object, or may be embedded in paper.

The case where a flexible semiconductor device is attached to a substrate having a curved surface will be described (see FIG. 7C). In the drawing, one transistor constituting a semiconductor device is illustrated. The drain region 703, the gate electrode 506, and the source region 704 of the transistor are positioned in a straight line, and current flows in this direction. The direction in which this current flows and the direction in which the substrate draws an arc are arranged perpendicularly. With such an arrangement, even when the substrate is bent and an arc is drawn, the influence of stress on the transistor is small, and variation in characteristics of the transistor can be suppressed.

Further, in order to prevent the destruction of a semiconductor element such as a transistor due to stress, the area of the active region (silicon island portion) of the semiconductor element is 50% or less (preferably 1) with respect to the area of the entire substrate. To 30%). In a region where a semiconductor element such as a transistor does not exist, a base insulating film material, an interlayer insulating film material, and a wiring material are mainly provided. The area other than the active region such as a transistor is preferably 60% or more of the entire area of the substrate. In this way, it is possible to provide a semiconductor device that is easy to bend but has a high degree of integration.

In this manner, when the element group 601 is attached to a flexible protective layer or the like, a thin, light, and strong semiconductor device can be provided. In addition, a semiconductor device in which the element group 601 is bonded to a flexible substrate can be bonded to a surface having a shape different from a flat surface, such as a curved surface, and various uses can be realized.

For example, a wireless tag which is one embodiment of the semiconductor device of the present invention can be tightly attached to a curved surface such as a bottle. Furthermore, since the substrate can be reused, an inexpensive semiconductor device can be provided.

The wireless communication with the reader / writer performed by the semiconductor device of the present invention manufactured as described above is affected by a metal surface parallel to the plane on which the antenna is formed and a highly conductive material surface. This is because the highly conductive substance absorbs electromagnetic waves emitted from the reader / writer. Therefore, the substrate over which the element group 601 and the antenna 102 are formed is preferably formed using an insulating substrate such as a glass substrate or a flexible substrate rather than a metal or semiconductor substrate.

Further, the second conductive layer of the memory element, that is, the common electrode is formed in a linear shape. This is because, when the common electrode is formed in a linear shape, absorption of electromagnetic waves emitted from the reader / writer can be suppressed and a communication distance can be secured. In this manner, the present invention can provide a semiconductor device that is small, light, inexpensive, has a long communication distance, and has the added value of flexibility.

Note that this embodiment can be freely combined with the above embodiment modes and embodiments.

In this embodiment, a structure in which a semiconductor device of the present invention includes an organic memory and a mask ROM as a memory having another structure will be described.

In the semiconductor device of this example, a mask ROM may be formed at the same time in the manufacturing steps of the transistors in the above embodiment modes and examples. Hereinafter, a case where a mask ROM is formed in a transistor manufacturing process will be described.

The mask ROM is formed by a plurality of transistors, and the transistors constituting the mask ROM are formed by photolithography. At that time, data can be written depending on whether or not a contact hole for wiring connected to, for example, a drain region of the transistor is opened. For example, 1 (on) when opened, 0 (off) when not opened. ) Data (information) can be written into the memory cell.

In the step of exposing the photoresist, before or after the step of exposing through the reticle (photomask) using an exposure apparatus such as a stepper, the photoresist on the region where the contact hole is opened is irradiated with an electron beam or a laser. . Thereafter, development, etching, and stripping of the photoresist are performed as usual. By doing so, it is possible to create a pattern for opening the contact hole and a pattern for not opening the contact hole only by selecting the irradiation region of the electron beam or laser without exchanging the reticle (photomask). That is, by selecting an irradiation region of an electron beam or a laser, it is possible to manufacture a mask ROM in which different data is written for each semiconductor device at the time of manufacture.

Using such a mask ROM, a unique identifier (UID: Unique Identifier) or the like for each semiconductor device can be formed at the time of manufacture. Furthermore, since the semiconductor device of this embodiment has an organic memory that can be additionally written, data can be written in addition to manufacturing the semiconductor device. As described above, the present invention can provide a semiconductor device that is small, lightweight, inexpensive, has a long communication distance, and has a unique identifier for each semiconductor device.

Note that this embodiment can be freely combined with the above embodiment modes and embodiments.

In this embodiment, a specific example of use of the semiconductor device of the present invention will be described.

Although the semiconductor device of the present invention has a wide range of uses, for example, a wireless tag which is one form of the semiconductor device of the present invention is a banknote, a coin, a securities, a certificate, a bearer bond, a packaging container, a book It can be used for recording media, personal items, vehicles, foods, clothing, health supplies, daily necessities, medicines, electronic devices, and the like.

Banknotes and coins are money that circulates in the market, and include those that are used in the same way as money in a specific area (cash vouchers), commemorative coins, and the like. Securities refers to checks, securities, promissory notes, and the like. Certificates refer to driver's licenses, resident cards, etc. Bearer bonds refer to stamps, gift cards, and various gift certificates. Packaging containers refer to wrapping paper for lunch boxes, plastic bottles, and the like. Books refer to books, books, and the like. The recording medium refers to DVD software, video tape, and the like. Personal items refer to bags, glasses, and the like. Vehicles refer to vehicles such as bicycles, ships, and the like. Foods refer to food products, beverages, and the like. Clothing refers to clothing, footwear, and the like. Health supplies refer to medical equipment, health equipment, and the like. Livingware refers to furniture, lighting equipment, and the like. Chemicals refer to pharmaceuticals, agricultural chemicals, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (TV receivers, flat-screen TV receivers), mobile phones, and the like.

Forgery can be prevented by providing wireless tags on bills, coins, securities, certificate documents, bearer bonds, and the like. In addition, it is possible to improve the efficiency of inspection systems and rental store systems by providing wireless tags for personal items such as packaging containers, books, recording media, personal items, foods, daily necessities, and electronic devices. it can. By providing wireless tags for vehicles, health supplies, medicines, etc., counterfeiting and theft can be prevented, and medicines can prevent mistakes in taking medicines. As a method of providing the wireless tag, the wireless tag is provided on the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin.

By applying such a semiconductor device to an object management or distribution system, it is possible to increase the functionality of the system. For example, as shown in FIG. 8A, a reader / writer 802 is provided on a side surface of a portable terminal including a display portion 801, and a semiconductor device 804 which is one embodiment of the semiconductor device of the present invention is provided on a side surface of an article 803. Is mentioned. In this case, when the semiconductor device 804 is held over the reader / writer 802, the display unit 801 displays information such as the raw material and origin of the product 803 and the history of distribution process.

As another example, as shown in FIG. 8B, a product 810 mounted with a semiconductor device 804 is transported by a belt conveyor, and a reader / writer 802 is provided on the side of the belt conveyor. In this case, the product 810 can be easily inspected.

When the distance between the semiconductor device 804 and the reader / writer 802 is not constant as in the inspection illustrated in FIG. 8B, a wireless tag having a long communication distance is necessary. The present invention can provide a wireless tag having a long communication distance without interfering with transmission / reception of information in an electromagnetic induction type wireless tag having a relatively long communication distance that is not affected by moisture.

Note that this embodiment can be freely combined with the above embodiment modes and embodiments.

In this embodiment, an operation of reading data in the memory element portion by an electrical action will be specifically described with reference to FIGS.

FIG. 13 shows a current-voltage characteristic 951 of the memory element unit in which data “0” is written to the memory element unit, a current-voltage characteristic 952 of the memory element unit in which data “1” is written, and a resistance element 211 shows a current-voltage characteristic 953. The horizontal axis indicates the voltage of the node α. Here, the resistance element 211 is a transistor. Further, a case where 3 V is applied between the common electrode 401 and Vread as an operation voltage when reading data will be described.

In a memory cell having a memory element portion in which data of “0” is written, an intersection 954 between the current-voltage characteristic 951 of the memory element part and the current-voltage characteristic 953 of the transistor serves as an operating point. The potential of α is V2 (V). The potential of the node α is supplied to the sense amplifier 212. The sense amplifier 212 compares the potential of the node α with the reference potential (Vref), and determines that the data stored in the memory cell is “0”.

On the other hand, in a memory cell having a memory element portion in which data of “1” is written, an intersection 955 between the current-voltage characteristic 952 of the memory element part and the current-voltage characteristic 953 of the transistor serves as an operating point. The potential of α is V1 (V). As shown in FIG. 2B, the potential of the node α is supplied to the sense amplifier 212. The sense amplifier 212 compares the potential of the node α with the reference potential (Vref), and the data stored in the memory cell. Is determined as “1”.

The sense amplifier 212 has a function of comparing whether the potential of the supplied node α is larger or smaller than Vref. Therefore, the potential of Vref is V1 <Vref <V2.

In this manner, by reading the resistance-divided potential according to the resistance value of the memory element 208, the data stored in the memory cell can be easily determined.

According to the above method, the voltage value is read by utilizing the difference in resistance value of the memory element 208 and the resistance division. However, information included in the memory element 208 may be read using a current value.

As described above, a semiconductor device having an organic memory that has a simple structure, can be written and read by a simple operation, and can be manufactured at low cost can further meet the market demand by increasing the communication distance. .

The communication distance of wireless communication is affected by a plane on which the antenna is formed, a metal surface that is parallel to the antenna, and a material surface with high conductivity. This is because the highly conductive substance absorbs electromagnetic waves emitted from the reader / writer.

Therefore, the common electrode of the organic memory is formed in a linear shape. This is because by forming the common electrode with high conductivity in a linear shape, absorption of electromagnetic waves emitted from the reader / writer can be suppressed and a communication distance can be secured. Thus, the present invention can provide a semiconductor device that is easy to use and has a long communication distance.

6A and 6B illustrate a semiconductor device of the present invention. 6A and 6B illustrate a semiconductor device of the present invention. FIG. 14 is a cross-sectional view illustrating a structure of a semiconductor device of the invention. 6A and 6B illustrate a semiconductor device of the present invention. 6A and 6B illustrate a semiconductor device of the present invention. 6A and 6B illustrate a semiconductor device of the present invention. 6A and 6B illustrate a semiconductor device of the present invention. 8A and 8B illustrate usage patterns of a semiconductor device of the present invention. 6A and 6B illustrate a semiconductor device of the present invention. 8A and 8B illustrate a manufacturing process of a semiconductor device of the present invention. 8A and 8B illustrate a manufacturing process of a semiconductor device of the present invention. 8A and 8B illustrate a manufacturing process of a semiconductor device of the present invention. 8A and 8B illustrate a method for operating a semiconductor device of the present invention. 6A and 6B illustrate a semiconductor device of the present invention.

Claims (6)

An organic memory having a memory cell array including a plurality of memory cells;
Has a antenna, the,
Each of the plurality of memory cells includes a transistor and a memory element;
The memory element includes a first conductive layer, a second conductive layer, and a organic compound layer provided between the first conductive layer and the second conductive layer,
The second conductive layer is common to the memory element of the plurality of memory cells have,
The semiconductor device, wherein the second conductive layer is provided in a comb shape . An organic memory having a memory cell array including a plurality of memory cells;
An antenna, and
Each of the plurality of memory cells includes a transistor and a memory element;
The memory element includes a first conductive layer, a second conductive layer, and an organic compound layer provided between the first conductive layer and the second conductive layer,
The second conductive layer is common to the memory elements included in the plurality of memory cells,
The semiconductor device, wherein the second conductive layer is provided in a ladder shape. In claim 1 or claim 2,
At least one of the first conductive layer and the second conductive layer has a light-transmitting property. In any one of Claims 1 thru | or 3 ,
The organic compound layer is a material whose electrical resistance changes by irradiating light, a material whose electrical resistance changes by causing a potential difference between the first conductive layer and the second conductive layer, or heating. A semiconductor device characterized by having a material whose electrical resistance changes as a result. In any one of Claims 1 thru | or 4 ,
The semiconductor device, wherein the second conductive layer is provided on the same plane or a plane parallel to a plane where the antenna is provided. In any one of Claims 1 thru | or 5 ,
The organic memory and the antenna are provided on a glass substrate or a flexible substrate .

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