JP4704959B2 - Product management method and dangerous goods management method - Google Patents

Description

  The present invention relates to a semiconductor device capable of transmitting and receiving data without contact, and more particularly to a semiconductor device capable of changing a communication distance of the semiconductor device.

  2. Description of the Related Art In recent years, attention has been focused on an individual recognition technique in which an ID (individual identification number) is given to an individual object to clarify information such as a history of the object and to be useful for production and management. Among them, development of semiconductor devices capable of transmitting and receiving data without contact is underway. As such a semiconductor device, RFID (Radio Frequency Identification) (ID tag, IC tag, IC chip, RF tag (Radio Frequency), wireless tag, electronic tag, also referred to as wireless chip) has been introduced in the company, the market, etc. Being started.

  Many of semiconductor devices such as RFID that are currently in practical use include an element group (also referred to as an IC (Integrated Circuit) chip) having a circuit including transistors and a conductive film functioning as an antenna. These semiconductor devices can exchange data with a reader / writer via an antenna using electromagnetic waves.

  However, it has been pointed out that when these semiconductor devices (also referred to as RFID) are mounted on products, the privacy of consumers may be infringed (for example, Non-Patent Document 1). For example, if RFID is embedded in a product, the location of the consumer carrying the product may be tracked after purchase. In addition, when an RFID is embedded in a luxury product such as a brand product, there is a possibility that the RFID information may be used for identifying a kind of purchasing power by stealing information of the RFID. Furthermore, there is a possibility that information of the RFID is rewritten (forged) by a third party. Thus, when RFID is mounted on a product, the longer the communication distance is, the more convenient it is for management and monitoring in the distribution process. However, when the product reaches a specific individual, the communication distance is long. The longer the product is purchased, the more likely it is that the content of the purchased product will be understood by a third party or forged.

As a countermeasure against such a problem, a countermeasure such as attaching an RFID to a price tag, wrapping paper or the like so that it can be removed after purchase without embedding RFID in the product itself can be considered. However, if the tag can be easily removed, there is a concern that the security against forgery or theft may be reduced. In addition, measures such as preventing data from being read from outside by destroying the RFID embedded in the product after purchase can be considered, but it is effective when discarding the product, but after purchasing the product, Consumers and producers cannot use product information contained in RFID, and for example, information useful for product repair and maintenance is lost.
Tsuchiya Taiyo, Object Privacy, [online], 2004/7, Internet <URL: http: // www. fri. fujitsu. com / open_knlg / review / rev083 / review01. html>

  The present invention is a semiconductor device capable of protecting the privacy of the owner of the product and controlling the communication distance according to the use even when the product is equipped with a semiconductor device capable of exchanging data without contact. The purpose is to provide.

  In order to achieve the above object, the present invention takes the following measures.

  A semiconductor device of the present invention is disposed so as to surround an element group having a plurality of transistors provided over a substrate, a first conductive film functioning as an antenna provided above the element group, and the first conductive film. A second conductive film, the first conductive film is provided in a coil shape, the second conductive film has a first end and a second end, and the first end The second portion and the second end portion are provided in an annular shape through the switching means. Note that the term “annular” as used in this specification refers to a state where the first end and the second end of the conductive film are directly connected, as well as the first end and the second end of the conductive film. Is connected through an electrically connectable device (including a device that can control connection on / off).

  As another structure of the semiconductor device of the present invention, an element group including a plurality of transistors provided over a substrate, a first conductive film functioning as an antenna, a first end portion, A second conductive film which has a second end portion and is disposed so as to surround the first conductive film; and is provided via an insulating film so as to cover the first end portion and the second end portion The first conductive film is provided in a coil shape, and both end portions of the first conductive film are connected to the plurality of transistors, respectively, and the second conductive film is formed of the first conductive film. It has an end portion and a second end portion, and the first end portion and the second end portion are insulated and arranged.

  As another structure of the semiconductor device of the present invention, an element group including a plurality of transistors provided over a substrate, a first conductive film functioning as an antenna, a first end portion, A second conductive film which has a second end portion and is disposed so as to surround the first conductive film; and is provided via an insulating film so as to cover the first end portion and the second end portion A first conductive film, the first conductive film is provided in a coil shape, and both ends of the first conductive film are connected to a plurality of transistors, respectively, and the first end and the second end One of the portions is electrically connected to the third conductive film, and the other is insulated.

  As another structure of the semiconductor device of the present invention, an element group including a plurality of transistors provided over a substrate, and a first conductive film and a first conductive film functioning as an antenna are provided above the element group. The first conductive film is provided in a coil shape, and both end portions of the first conductive film are connected to the plurality of thin film transistors, respectively, and the second conductive film is provided. Is characterized by being annularly provided.

  As another structure of the semiconductor device of the present invention, an element group including a plurality of transistors provided over a substrate, and a first conductive film and a first conductive film that function as an antenna provided above the element group A first conductive film is provided in a coil shape, and the second conductive film has a first end and a second end. In addition, the first end portion and the second end portion are provided in an annular shape via the switching means.

  As another structure of the semiconductor device of the present invention, an element group having a plurality of transistors provided over a substrate, a first conductive film functioning as an antenna provided above the element group, and a first conductive film A second conductive film disposed around the film, the first conductive film is provided in a coil shape, and the second conductive film has a first end and a second end. In addition, the first end portion and the second end portion are provided in a ring shape through one of a plurality of transistors.

  As another structure of the semiconductor device of the present invention, an element group having a plurality of transistors provided over a substrate, a first conductive film functioning as an antenna provided above the element group, and a first conductive film A plurality of second conductive films disposed around the film, and the first conductive film functioning as an antenna is provided in a coil shape, and each of the plurality of second conductive films has a first end. And a second end portion, and the first end portion and the second end portion are provided in an annular shape through one of the plurality of transistors.

  In the semiconductor device of the present invention having the above structure, a memory portion is provided in the element group, and the memory portion includes a plurality of bit lines extending in the first direction and a first line perpendicular to the first direction. A plurality of word lines extending in two directions, a memory cell including a storage element, and a memory cell array including the plurality of memory cells, wherein the storage element portion includes a conductive film and a word line forming a bit line It has the organic compound layer provided between the electrically conductive films which comprise this, It is characterized by the above-mentioned.

  Since the semiconductor device of the present invention can control the communication distance, by controlling the communication distance of the semiconductor device according to personal use, the privacy of the person who purchased the product on which the semiconductor device is mounted can be protected. It becomes possible to protect.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals may be used in common in different drawings.

(Embodiment 1)
In this embodiment, an example of a semiconductor device of the present invention will be described with reference to drawings.

  The semiconductor device described in this embodiment includes at least an element group 402 provided over a substrate 401, a conductive film 403 functioning as an antenna provided above the element group 402, and the conductive film 403. A conductive film 404 serving as a dummy pattern is provided (FIG. 1A). The conductive film 403 functioning as an antenna is provided in a coil shape, and both end portions of the conductive film 403 are electrically connected to the element group 402, respectively. In addition, the conductive film 404 has a first end 405a and a second end 405b, and the first end 405a and the second end 405b are connected to the switching means 410 and switched. It is provided in an annular shape via the means 410 (FIGS. 1B and 1C). Note that the term “annular” as used in this specification refers to the state where the first end 405a and the second end 405b of the conductive film 404 are directly connected, and the first end 405a and the second end. A state where 405b is connected via an electrically connectable device (here, switching means 410).

  As the substrate 401, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a ceramic substrate, a metal substrate including stainless steel, or the like can be used. Further, a semiconductor substrate such as Si may be used. In addition, it is also possible to use a substrate made of a plastic such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polyethersulfone (PES), or a flexible synthetic resin such as acrylic. is there. By using a flexible substrate, a semiconductor device that can be bent can be manufactured. Moreover, since there is no big restriction | limiting in the area and shape if it is such a board | substrate, if one side is 1 meter or more and a rectangular thing is used as the board | substrate 401, productivity will be marked. Can be improved. Such an advantage is a great advantage compared to the case of using a circular silicon substrate.

  The element group 402 includes at least a transistor, and a variety of integrated circuits such as a CPU, a memory, or a microprocessor can be provided using the transistor. Specifically, as a transistor included in the element group 402, a thin film transistor (TFT) is formed over a substrate 401 made of glass, plastic, or the like, or a semiconductor substrate such as Si is used as the substrate 401, and the semiconductor substrate is replaced with a transistor. For example, a field effect transistor (FET) used as a channel region can be formed. Alternatively, an SOI substrate can be used as the substrate 401 and a transistor can be formed over the substrate. In the case of using an SOI substrate, an element group transistor is formed using a method of bonding a Si wafer or a method called SIMOX in which an insulating layer is formed inside by implanting oxygen ions into the Si substrate. Can do.

  The conductive films 403 and 404 include copper (Cu), aluminum (Al), silver (Ag), gold (Au), chromium (Cr), molybdenum (Mo), titanium (Ti), tantalum (Ta), and tungsten. It can be formed using a method such as sputtering or CVD using a conductive material containing one or more metals or metal compounds such as (W) and nickel (Ni). In addition, a conductive paste can be formed by a printing method such as a droplet discharge method (also referred to as an ink jet method) or a screen printing method. As the conductive paste, a paste obtained by dissolving or dispersing conductive particles having a particle diameter of several nanometers to several tens of micrometers in an organic resin can be used. As conductive particles, silver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo) and titanium (Ti) Any one or more metal particles, silver halide fine particles, or dispersible nanoparticles can be used. In addition, as the organic resin contained in the conductive paste, one or more selected from organic resins functioning as a binder of metal particles, a solvent, a dispersant, and a coating material can be used. Typically, an organic resin such as an epoxy resin or a silicon resin can be given. In forming the conductive film, it is preferable to fire after extruding the paste. For example, when fine particles containing silver as a main component (for example, a particle size of 1 nm to 100 nm) are used as a paste material, the conductive film can be obtained by being cured by baking in a temperature range of 150 to 300 ° C. Further, the conductive film 403 and the conductive film 404 can be formed at the same time using the above method, or can be formed separately.

  The switching means 410 is connected to the first end 405a and the second end 405b of the conductive film 404 to be a dummy pattern, and the electrical connection between the first end 405a and the second end 405b. Means for switching (on / off) the connection is provided. The switching unit 410 may have any structure as long as it has a unit for switching the electrical connection between the first end 405a and the second end 405b of the conductive film 404. In addition, the switching means 410 can be provided with a structure in which the electrical connection can be switched only once or can be provided in a structure that can be performed multiple times.

  In the semiconductor device described in this embodiment, the switching distance is used to switch the electrical connection between the first end portion 405a and the second end portion 405b of the conductive film 404, so that the communication distance of the semiconductor device can be reduced. Can be controlled. Hereinafter, a case where an electromagnetic coupling method or an electromagnetic induction method in which the conductive film 403 is provided in a coil shape will be described.

  In general, when an electromagnetic coupling method or an electromagnetic induction method is used, a power supply voltage is generated in the element group 402 and information is exchanged using an electromagnetic wave transmitted from an external device (reader / writer). Therefore, as shown in FIG. 3, the conductive film 403 provided in a coil shape or an annular shape (when the first end 405a and the second end 405b of the conductive film 404 are directly connected, or the first A magnetic field is generated in a region surrounded by the conductive film 404 provided when the end portion 405a and the second end portion 405b are electrically connected via the switching means (when the switching means 410 is on). Then (in FIG. 3, from the top to the bottom of the page), a current is generated in the conductive film 403 and the conductive film 404 so as to cancel the generated magnetic field.

  For example, when an electromagnetic wave is transmitted from a reader / writer to the semiconductor device, the semiconductor device supplies a power supply voltage and a signal to the element group 402 through the conductive film 403 functioning as an antenna. On the other hand, an electromagnetic wave is also sent to the conductive film 404 to be a dummy pattern, and a current continues to flow through the conductive film 404 while the magnetic field is changing. However, the current generated in the conductive film 404 is sent from the reader / writer. A magnetic field (from the bottom of the page to the top) is generated so as to cancel the electromagnetic wave. Similarly, when an electromagnetic wave is sent from the semiconductor device to the reader / writer, a magnetic field is generated so as to cancel the electromagnetic wave due to the presence of the conductive film 404.

  As a result, the communication distance is reduced because the magnetic field sent from the reader / writer or the magnetic field sent from the semiconductor device is canceled by the magnetic field generated by the current generated in the conductive film 404. Conversely, when the first end 405a and the second end 405b of the conductive film 404 are not annular, the first end 405a and the second end 405b are annularly provided via the switching means 410. Even if it is a case where it is not electrically connected (the switching means 410 is in an off state), a current does not continue to flow through the conductive film 404 due to a change in the magnetic field, so the communication distance does not decrease. .

  Thus, the communication distance of the semiconductor device can be controlled by turning on / off the switching means 410. As described above, the switching means may have any structure as long as it has means for switching the electrical connection between the first end portion 405a and the second end portion 405b of the conductive film 404. For example, a transistor, a mechanical switch, a membrane switch, a conductive rubber switch, a capacitance switch, or the like can be used.

  The case where a transistor is used as the switching means 410 will be described below with reference to the drawings. As the transistor, a thin film transistor (TFT) formed on a substrate made of glass, plastic, or the like, a field effect transistor (FET) using a semiconductor substrate such as Si and using the semiconductor substrate as a channel region of the transistor, or the like is used. However, a case where a thin film transistor is used will be described here.

  In the case where the transistor 410a is used as switching means (FIG. 2A), one of the first end 405a and the second end 405b of the conductive film 404 is electrically connected to the source region of the transistor 410a. And the other can be provided so as to be electrically connected to the drain region of the transistor 410a (FIG. 2B). The transistor 410a can be provided in the same layer as the element group 402 (FIG. 2C). In this case, the transistor 409 included in the element group 402 and the transistor 410a functioning as switching means can be formed at the same time.

  When voltage is applied to the gate electrode of the transistor 410a (when the transistor 410a is on), a current flows through the conductive film 404 connected between the source region and the drain region of the transistor 410a. When an electromagnetic wave is sent, a current flows so as to cancel the change in the magnetic field associated therewith, and the communication distance can be reduced.

  The on / off state of the transistor can be controlled using a nonvolatile memory in the memory portion. That is, it is possible to store in the nonvolatile memory whether the transistor is on or off at a certain time. As means for continuously applying a voltage to the gate electrode of the transistor, a capacitive element or a ferroelectric material (for example, a perovskite compound such as PZT (lead zirconate titanate)), SBZ (barium titanate, It can be carried out by connecting a layered perovskite compound such as strontium). Further, by connecting a power source (battery) to the gate electrode of the transistor, voltage can be continuously applied to the transistor.

  As a switching means, in addition to the above-described method, a structure in which the first end portion 405a and the second end portion 405b of the conductive film 404 are connected can be used. A specific example thereof will be described below with reference to FIG.

  The semiconductor device illustrated in FIG. 5 is arranged so as to surround at least the element group 402 provided over the substrate 401, the conductive film 403 functioning as an antenna provided above the element group 402, and the conductive film 403. In addition, a conductive film 404 including a first end portion 405a and a second end portion 405b is provided, and a conductive film 407 is provided over the conductive film 404 with an insulating film 406 interposed therebetween (FIG. 5A ), (B)). Note that the insulating film 406 may be formed over the entire surface, or may be selectively formed only in a portion covering the first end portion 405a and the second end portion 405b of the conductive film 404.

  The insulating film 406 is formed using silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y) by CVD, sputtering, or the like. An insulating film having oxygen or nitrogen, such as oxygen, or a film containing carbon such as DLC (diamond-like carbon) can be used. In addition, a single layer or a laminated structure of an organic material such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, or a siloxane material such as a droplet discharge method, a screen printing method, or a spin coating method is provided. Can do.

  The conductive film 407 includes copper (Cu), aluminum (Al), silver (Ag), gold (Au), chromium (Cr), molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W) and It can be formed by a sputtering method, a CVD method, or the like using a conductive material having one or more metals such as nickel (Ni) or a metal compound. In addition, a conductive paste can be formed using a printing method such as a droplet discharge method or a screen printing method. As the conductive paste, a paste obtained by dissolving or dispersing conductive particles having a particle diameter of several nanometers to several tens of micrometers in an organic resin can be used. As conductive particles, silver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo) and titanium (Ti) Any one or more metal particles, silver halide fine particles, or dispersible nanoparticles can be used. In addition, as the organic resin contained in the conductive paste, one or more selected from organic resins functioning as a binder of metal particles, a solvent, a dispersant, and a coating material can be used. Typically, an organic resin such as an epoxy resin or a silicon resin can be given. In forming the conductive film, it is preferable to fire after extruding the paste. For example, in the case where fine particles containing silver as a main component (for example, a particle size of 1 nm to 100 nm) is used as a paste material, the conductive film can be obtained by being cured by baking in a temperature range of 150 to 300 degrees.

  In the semiconductor device illustrated in FIG. 5B, both end portions (the first end portion 405a and the second end portion 405b) of the conductive film 404 are not connected. In other words, since the conductive film 404 is not circular, even when electromagnetic waves are transmitted from the reader / writer, no current flows through the conductive film 404, so the communication distance of the semiconductor device does not decrease.

  On the other hand, each of the first end 405a and the second end 405b of the conductive film 404 is electrically connected to the conductive film 407, whereby the first end 405a and the second end 405b are electrically connected. Electrical connection is established through the film 407, so that the conductive film 404 can be regarded as a ring (FIGS. 5C and 5D). In this case, when an electromagnetic wave is transmitted from the reader / writer (when a magnetic field change occurs), the electromagnetic wave is weakened by the current generated in the conductive film 404 as described above, so that the communication distance of the semiconductor device is short. Become. Since the attenuation of the communication distance depends on the shape and cross-sectional area of the conductive film 404, the practitioner can appropriately control the communication distance by selecting the shape and cross-sectional area of the conductive film 404 as appropriate. For example, the communication distance can be zero (a state in which data of the semiconductor device cannot be read unless contact is made).

  As a method for connecting each of the first end portion 405a and the second end portion 405b to the conductive film 407, laser light irradiation, means for physically pushing a conductive needle, or the like can be used. . Specifically, when laser light irradiation is used, the conductive film 407 is selectively irradiated with laser light on the conductive film 407 located above the first end portion 405a and the second end portion 405b, thereby forming a conductive film. The first end portion 405a and the second end portion 405b can be electrically connected to the conductive film 407 by melting the 407 and the insulating film 406 (FIG. 5C). On the other hand, in the case of using a method of physically pushing a conductive needle, the conductive needle is selectively applied to the conductive film 407 positioned above the first end 405a and the second end 405b. Or the like so as to penetrate a part of the conductive film 407, the insulating film 406, and the conductive film 404, thereby electrically connecting each of the first end portion 405a and the second end portion 405b to the conductive film 407. (FIG. 5D).

  In addition, one of the first end portion 405a and the second end portion 405b of the conductive film 404 may be electrically connected to the conductive film 407 in advance. Even when only one of the first end portion 405a and the second end portion 405b of the conductive film 404 is electrically connected to the conductive film 407, the conductive film 404 is not circular. The communication distance of the semiconductor device is not affected. In this case, the communication distance can be reduced only by connecting one of the first end portion 405a and the second end portion 405b of the conductive film 404 that is not electrically connected to the conductive film 407.

  In addition, the semiconductor device illustrated in FIG. 5 can be changed from a long communication distance to a short state only once. This is effective for preventing information on the semiconductor device from being stolen from outside by a third party. For example, when a semiconductor device is mounted on a product, it is necessary to increase the communication distance for product management or monitoring until the product reaches the consumer. It is only necessary to shorten the communication distance and display product information only at the consumer's will. Therefore, when a consumer purchases a product, as shown in FIGS. 5C and 5D, the first end portion 405a and the second end portion 405b of the conductive film 404 are electrically connected. Thus, by shortening the communication distance of the semiconductor device, it is possible to suppress the information on the product from being stolen from the outside and to prevent privacy infringement. In particular, by setting the communication distance to zero (a state in which information on the semiconductor device cannot be read unless contact is made), it is possible to prevent information from being stolen by a third party.

  In the above structure, a plurality of the conductive films 404 and the switching means 410 can be provided (FIGS. 4A and 4B). Specifically, a plurality of conductive films 404 are provided so as to surround the conductive film 403 so that both end portions thereof are respectively connected to the switching means 410. As the switching means 410, any of the means described above can be used. For example, by providing the transistors 410a at both ends of each of the plurality of conductive films 404 and controlling the plurality of transistors 410a, the communication distance of the semiconductor device can be controlled in stages. In addition, when the method shown in FIG. 4 is used, the communication distance can be controlled step by step, not limited to once, so that the communication distance is changed according to the usage pattern of the consumer. be able to.

(Embodiment 2)
In this embodiment, a semiconductor device different from that in the above embodiment is described with reference to drawings. Specifically, a method for controlling a communication distance of a semiconductor device using a physical means as a switching means will be described.

  The semiconductor device described in this embodiment includes at least an element group 402 provided over a substrate 401, a conductive film 403 functioning as an antenna provided above the element group 402, and the conductive film 403. A conductive film 404 serving as a dummy pattern is provided (FIG. 6A). The conductive film 403 functioning as an antenna is provided in a coil shape, and both end portions of the conductive film 403 are electrically connected to the element group 402, respectively. The conductive film 404 is provided in an annular shape (a state in which the above-described first end portion 405a and second end portion 405b are directly connected).

  In the semiconductor device illustrated in FIG. 6A, when an electromagnetic wave is transmitted from a reader / writer, the communication distance is shortened due to the presence of the conductive film 404 provided in an annular shape as described above. However, when part of the conductive film 404 is removed so that the conductive film 404 is non-annular, the communication distance of the semiconductor device can be increased as described above (FIG. 6B). The conductive film 404 can be removed by selectively irradiating laser light. In addition to laser light, a method of physically cutting the conductive film 404 can also be used. The semiconductor device of this embodiment can be changed from a short communication distance to a long state only once. This can be used, for example, when managing or monitoring an object by attaching it to an object that cannot be easily discarded, such as a hazardous material or industrial waste.

Note that this embodiment mode can be freely combined with Embodiment Mode 1.

(Embodiment 3)
In this embodiment, a semiconductor device different from that in the above embodiment is described with reference to drawings. Specifically, a method for connecting a conductive film functioning as an antenna and an element group via a switching unit will be described.

  The semiconductor device described in this embodiment includes at least an element group 402 provided over a substrate 401, a conductive film 403 functioning as an antenna provided above the element group 402, and the conductive film 403. A conductive film 404 serving as a dummy pattern is provided (FIGS. 7A and 7B). The conductive film 403 functioning as an antenna is provided in a coil shape, and one end 421 of the conductive film 403 is connected to the element group 402 through the switching means 420.

  As the switching means 420, any of the configurations of the switching means shown in the first embodiment can be used. For example, when a transistor is used as the switching means 420, the semiconductor device can communicate with the reader / writer when the transistor is on, but the semiconductor device can communicate with the reader / writer when the transistor is off. The device cannot communicate with the reader / writer. This is effective when information on a semiconductor device mounted on a product is no longer necessary. On the other hand, as shown in FIG. 5 above, one end portion 421 of the conductive film 403 and the element group 402 may be connected using physical means. In this case, the information on the semiconductor device cannot be read in a non-contact manner before connecting one end portion 421 of the conductive film 403 and the element group 402, but the information on the semiconductor device is read in a non-contact manner after the connection. Is possible.

  As the switching means, as shown in Embodiment Mode 2, when the switching means 420 connecting the one end 421 of the conductive film 403 and the element group 402 is removed, the semiconductor device is externally connected. Communication with is impossible. This is effective when the information on the semiconductor device provided in the product is no longer needed, or when the information on the semiconductor device is no longer needed as shown in the second embodiment.

Note that this embodiment mode can be freely combined with Embodiment Modes 1 and 2 described above.

(Embodiment 4)
In this embodiment, an example of a method for manufacturing a semiconductor device of the present invention including a thin film transistor and an antenna will be described with reference to drawings.

  First, a separation layer 702 is formed on the surface of the substrate 701, and then an amorphous semiconductor film 704 (eg, a film containing amorphous silicon) is formed over the separation layer 702 with an insulating film 703 interposed therebetween (FIG. 8 (FIG. 8 ( A)).

  As the substrate 701, a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate with an insulating film formed on one surface, a heat-resistant plastic substrate that can withstand the processing temperature in this step, or the like may be used. With such a substrate 701, the area and shape of the substrate 701 are not greatly limited. For example, by using a rectangular substrate having one side of 1 meter or more and a rectangular shape, the productivity is remarkably improved. Can be improved. Such an advantage is a great advantage compared to the case of using a circular silicon substrate. Note that in this step, the peeling layer 702 is provided over the entire surface of the substrate 701. However, after being provided with a peeling layer over the entire surface of the substrate 701, etching is performed selectively by photolithography as necessary. May be. In addition, although the separation layer 702 is formed so as to be in contact with the substrate 701, an insulating film serving as a base is formed so as to be in contact with the substrate 701 as necessary, and the separation layer 702 is formed so as to be in contact with the insulation film. May be.

For the separation layer 702, a metal film, a stacked structure of a metal film and a metal oxide film, or the like can be used. As the metal film, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), A single layer or a stack of films made of an element selected from ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or an alloy material or compound material containing the element as a main component To form. These materials can be formed by using various CVD methods such as a sputtering method and a plasma CVD method. As a laminated structure of a metal film and a metal oxide film, after forming the above-described metal film, by performing plasma treatment in an oxygen atmosphere and heat treatment in an oxygen atmosphere, the oxide of the metal film is formed on the surface of the metal film. Can be provided. For example, in the case where a tungsten film formed by a sputtering method is provided as the metal film, a metal oxide film made of tungsten oxide can be formed on the tungsten film surface by performing plasma treatment on the tungsten film. In this case, the oxide of tungsten is represented by WOx, X is 2 to 3, X is 2 (WO ₂ ), X is 2.5 (W ₂ O ₅ ), and X is In the case of 2.75 (W ₄ O ₁₁ ), X is 3 (WO ₃ ), and the like. In forming the tungsten oxide, there is no particular limitation on the value of X mentioned above, and it is preferable to determine which oxide is formed based on the etching rate or the like. In addition, as a condition for the plasma treatment, for example, high frequency (preferably 1 × 10 ¹¹ cm ⁻³ or more and 1 × 10 ¹³ cm ⁻³ or less) using high frequency (microwave or the like) and low electron temperature (preferably It is also possible to form an oxide film on the surface of the metal film by performing the process under conditions of 0.5 eV or more and 1.5 eV or less (hereinafter also referred to as “high density plasma”). In addition to the metal oxide film, metal nitride or metal oxynitride may be used. In this case, plasma treatment or heat treatment may be performed on the metal film in a nitrogen atmosphere or a nitrogen and oxygen atmosphere. The plasma treatment can be performed in the same manner as described above.

  The insulating film 703 is formed as a single layer or a stack of a film containing silicon oxide or silicon nitride by a sputtering method, a plasma CVD method, or the like. In the case where the base insulating film has a two-layer structure, for example, a silicon nitride oxide film may be formed as the first layer and a silicon oxynitride film may be formed as the second layer. When the base insulating film has a three-layer structure, a silicon oxide film is formed as the first insulating film, a silicon nitride oxide film is formed as the second insulating film, and oxynitriding is performed as the third insulating film. A silicon film is preferably formed. Alternatively, a silicon oxynitride film may be formed as the first insulating film, a silicon nitride oxide film may be formed as the second insulating film, and a silicon oxynitride film may be formed as the third insulating film. The insulating film serving as a base functions as a blocking film that prevents impurities from entering from the substrate 701.

  The amorphous semiconductor film 704 is formed with a thickness of 25 to 200 nm (preferably 30 to 150 nm) by sputtering, LPCVD, plasma CVD, or the like.

  Next, the amorphous semiconductor film 704 is crystallized (laser crystallization, thermal crystallization using an RTA or furnace annealing furnace, thermal crystallization using a metal element that promotes crystallization, or crystallization is promoted. A crystalline semiconductor film is formed by crystallization using a combination of a thermal crystallization method using a metal element and a laser crystallization method. After that, the obtained crystalline semiconductor film is etched into a desired shape to form crystalline semiconductor films 706 to 710 (FIG. 8B).

  An example of a manufacturing process of the crystalline semiconductor films 706 to 710 will be briefly described below. First, an amorphous semiconductor film having a thickness of 66 nm is formed using a plasma CVD method. Next, after a solution containing nickel, which is a metal element that promotes crystallization, is held on the amorphous semiconductor film, the amorphous semiconductor film is subjected to dehydrogenation treatment (500 ° C., 1 hour), heat Crystallization treatment (550 ° C., 4 hours) is performed to form a crystalline semiconductor film. Thereafter, laser light is irradiated as necessary, and crystalline semiconductor films 706 to 710 are formed by using a photolithography method.

A continuous wave laser beam (CW laser beam) or a pulsed laser beam (pulse laser beam) can be used. The laser beam that can be used here is a gas laser such as an Ar laser, a Kr laser, or an excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline ( (Ceramics) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta added as dopants A laser oscillated from one or more of laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser, or gold vapor laser as a medium can be used. By irradiating the fundamental wave of such a laser beam and the second to fourth harmonic laser beams of these fundamental waves, a crystal having a large grain size can be obtained. For example, a second harmonic (532 nm) or a third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. Energy density of the laser is about 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec. Note that single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ , dopants Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta, a laser using a medium added with one or more, an Ar ion laser, or a Ti: sapphire laser should oscillate continuously It is also possible to perform pulse oscillation at an oscillation frequency of 10 MHz or more by performing Q switch operation, mode synchronization, or the like. When the laser beam is oscillated at an oscillation frequency of 10 MHz or more, the semiconductor film is irradiated with the next pulse during the period from when the semiconductor film is melted by the laser to solidification. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, the solid-liquid interface can be continuously moved in the semiconductor film, so that crystal grains continuously grown in the scanning direction can be obtained.

  In addition, when an amorphous semiconductor film is crystallized using a metal element that promotes crystallization, it is possible to perform crystallization at a low temperature for a short time, and the crystal orientation is aligned. Remains in the crystalline semiconductor film, so that the off-current increases and the characteristics are not stable. Therefore, an amorphous semiconductor film functioning as a gettering site is preferably formed over the crystalline semiconductor film. Since the amorphous semiconductor film serving as a gettering site needs to contain an impurity element such as phosphorus or argon, it is preferably formed by a sputtering method which can contain argon at a high concentration. Then, heat treatment (RTA method or thermal annealing using a furnace annealing furnace) is performed to diffuse the metal element in the amorphous semiconductor film, and then the amorphous semiconductor film containing the metal element is removed. To do. Then, the content of the metal element in the crystalline semiconductor film can be reduced or removed.

  Next, a gate insulating film 705 covering the crystalline semiconductor films 706 to 710 is formed. The gate insulating film 705 is formed by a single layer or a stack of films containing silicon oxide or silicon nitride by a plasma CVD method, a sputtering method, or the like. Specifically, a film containing silicon oxide, a film containing silicon oxynitride, or a film containing silicon nitride oxide is formed as a single layer or a stacked layer.

Alternatively, the gate insulating film 705 may be formed by performing the above-described high-density plasma treatment on the crystalline semiconductor films 706 to 710 and oxidizing or nitriding the surface. For example, it is formed by plasma treatment in which a rare gas such as He, Ar, Kr, or Xe and a mixed gas such as oxygen, nitrogen oxide (NO ₂ ), ammonia, nitrogen, or hydrogen are introduced. When excitation of plasma in this case is performed by introducing microwaves, high-density plasma can be generated at a low electron temperature. The surface of the semiconductor film can be oxidized or nitrided by oxygen radicals (which may include OH radicals) or nitrogen radicals (which may include NH radicals) generated by this high-density plasma.

  By such treatment using high-density plasma, an insulating film with a thickness of 1 to 20 nm, typically 5 to 10 nm, is formed over the semiconductor film. Since the reaction in this case is a solid-phase reaction, the interface state density between the insulating film and the semiconductor film can be extremely low. Such high-density plasma treatment directly oxidizes (or nitrides) a semiconductor film (crystalline silicon or polycrystalline silicon), so that the thickness of the formed insulating film ideally has extremely small variation. can do. In addition, since oxidation is not strengthened even at the crystal grain boundaries of crystalline silicon, a very favorable state is obtained. That is, the surface of the semiconductor film is solid-phase oxidized by the high-density plasma treatment shown here, thereby forming an insulating film with good uniformity and low interface state density without causing an abnormal oxidation reaction at the grain boundaries. can do.

  As the gate insulating film, only an insulating film formed by high-density plasma treatment may be used, or an insulating film such as silicon oxide, silicon oxynitride, or silicon nitride is deposited by a CVD method using plasma or thermal reaction. , May be laminated. In any case, a transistor formed by including an insulating film formed by high-density plasma in part or all of the gate insulating film can reduce variation in characteristics.

  Next, a first conductive film and a second conductive film are stacked over the gate insulating film 705. The first conductive film is formed with a thickness of 20 to 100 nm by a plasma CVD method, a sputtering method, or the like. The second conductive film is formed with a thickness of 100 to 400 nm. The first conductive film and the second conductive film include tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium ( Nb) or the like or an alloy material or a compound material containing these elements as a main component. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus is used. As examples of combinations of the first conductive film and the second conductive film, a tantalum nitride (TaN) film and a tungsten (W) film, a tungsten nitride (WN) film and a tungsten film, a molybdenum nitride (MoN) film and molybdenum (Mo) film | membrane etc. are mentioned. Since tungsten and tantalum nitride have high heat resistance, heat treatment for thermal activation can be performed after the first conductive film and the second conductive film are formed. In the case of a three-layer structure instead of a two-layer structure, a stacked structure of a molybdenum film, an aluminum film, and a molybdenum film is preferably employed.

  Next, a resist mask is formed using a photolithography method, etching treatment for forming a gate electrode and a gate line is performed, and a conductive film functioning as a gate electrode (also referred to as a gate electrode) 716 ~ 725 are formed.

  Next, a resist mask is formed by photolithography, and an impurity element imparting N-type is added to the crystalline semiconductor films 706 and 708 to 710 at a low concentration by ion doping or ion implantation. N-type impurity regions 711 and 713 to 715 and channel formation regions 780 and 782 to 784 are formed. The impurity element imparting N-type may be an element belonging to Group 15, for example, phosphorus (P) or arsenic (As).

  Next, a resist mask is formed by photolithography, and an impurity element imparting P-type conductivity is added to the crystalline semiconductor film 707 to form a P-type impurity region 712 and a channel formation region 781. For example, boron (B) is used as the impurity element imparting P-type.

  Next, an insulating film is formed so as to cover the gate insulating film 705 and the conductive films 716 to 725. The insulating film is formed by a single layer or a stacked layer of a film containing an inorganic material such as silicon, silicon oxide or silicon nitride, or a film containing an organic material such as an organic resin by plasma CVD or sputtering. To do. Next, the insulating film is selectively etched by anisotropic etching mainly in the vertical direction to form insulating films (also referred to as sidewalls) 739 to 743 that are in contact with the side surfaces of the conductive films 716 to 725 (FIG. 8 (C)). Simultaneously with the formation of the insulating films 739 to 743, insulating films 734 to 738 obtained by etching the gate insulating film 705 are formed. The insulating films 739 to 743 are used as a mask for doping when an LDD (Lightly Doped Drain) region is formed later.

  Next, an impurity element imparting n-type conductivity is added to the crystalline semiconductor films 706 and 708 to 710 using a resist mask formed by a photolithography method and the insulating films 739 to 743 as masks. N-type impurity regions (also referred to as LDD regions) 727, 729, 731 and 733, and second N-type impurity regions 726, 728, 730 and 732 are formed. The concentration of the impurity element contained in the first N-type impurity regions 727, 729, 731, and 733 is lower than the concentration of the impurity element in the second N-type impurity regions 726, 728, 730, and 732. Through the above steps, N-type thin film transistors 744 and 746 to 748 and a P-type thin film transistor 745 are completed.

  In order to form the LDD region, there is a method using an insulating film on the sidewall as a mask. By using the sidewall insulating film as a mask, the width of the LDD region can be easily controlled, and the LDD region can be reliably formed.

  Next, an insulating film is formed as a single layer or a stacked layer so as to cover the thin film transistors 744 to 748 (FIG. 9A). An insulating film covering the thin film transistors 744 to 748 is formed by an SOG method, a droplet discharge method, or the like, an inorganic material such as silicon oxide or silicon nitride, or an organic material such as polyimide, polyamide, benzocyclobutene, acrylic, epoxy, or siloxane. Depending on the material or the like, a single layer or a stacked layer is formed. A siloxane-based material includes, for example, a skeleton structure composed of a bond between silicon and oxygen, a substance containing at least hydrogen as a substituent, or a skeleton structure composed of a bond between silicon and oxygen, and fluorine as a substituent. , A substance containing at least one of an alkyl group and an aromatic hydrocarbon. For example, when the insulating film covering the thin film transistors 744 to 748 has a three-layer structure, a film containing silicon oxide is formed as the first insulating film 749, a film containing resin is formed as the second insulating film 750, A film containing silicon nitride is preferably formed as the third insulating film 751.

  Note that before the insulating films 749 to 751 are formed or after one or more thin films of the insulating films 749 to 751 are formed, the crystallinity of the semiconductor film is restored and the activity of the impurity element added to the semiconductor film is increased. Heat treatment for the purpose of hydrogenation of the semiconductor film is preferably performed. For the heat treatment, thermal annealing, laser annealing, RTA, or the like is preferably applied.

  Next, the insulating films 749 to 751 are etched by photolithography to form contact holes that expose the N-type impurity regions 726 and 728 to 732 and the P-type impurity region 785. Subsequently, a conductive film is formed so as to fill the contact hole, and the conductive film is patterned to form conductive films 752 to 761 functioning as a source wiring or a drain wiring.

  The conductive films 752 to 761 are formed of an element selected from titanium (Ti), aluminum (Al), and neodymium (Nd) by a plasma CVD method, a sputtering method, or the like, or an alloy material or a compound material containing these elements as a main component Thus, a single layer or a stacked layer is formed. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. The conductive films 752 to 761 include, for example, a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, and a barrier film, and a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, a titanium nitride (TiN) film, and a barrier film. A structure should be adopted. Note that the barrier film corresponds to a thin film formed of titanium, titanium nitride, molybdenum, or molybdenum nitride. Aluminum and aluminum silicon are suitable materials for forming the conductive films 752 to 761 because they have low resistance and are inexpensive. In addition, when an upper layer and a lower barrier layer are provided, generation of hillocks of aluminum or aluminum silicon can be prevented. In addition, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film is reduced, and the crystalline semiconductor film is excellent. Contact can be made.

  Next, an insulating film 762 is formed so as to cover the conductive films 752 to 761 (FIG. 9B). The insulating film 762 is formed as a single layer or a stacked layer using an inorganic material or an organic material by an SOG method, a droplet discharge method, or the like. The insulating film 762 is preferably formed with a thickness of 0.75 to 3 μm.

  Subsequently, the insulating film 762 is etched by photolithography to form a contact hole that exposes the conductive film 752. Subsequently, a conductive film is formed so as to fill the contact hole. The conductive film is formed using a conductive material by a plasma CVD method, a sputtering method, or the like. Next, the conductive film is patterned to form a conductive film 765. Note that the conductive film 765 serves as a connection portion with the conductive film functioning as an antenna. Therefore, the conductive film 765 is preferably formed with a single layer or a stacked layer using titanium or an alloy material or a compound material containing titanium as a main component. In the photolithography step for forming the conductive film 765, wet etching may be performed in order to prevent damage to the lower thin film transistors 744 to 748, and the etching agent is hydrogen fluoride (HF) or ammonia. It is advisable to use excess water.

  Next, conductive films 766a to 766d functioning as antennas and a conductive film 767 functioning as a dummy pattern are formed in contact with the conductive film 765 (FIG. 10A). Here, the conductive films 766a to 766d and the conductive film 767 are formed by a screen printing method. Here, a paste 806 containing silver (Ag) is extruded from the opening 802 using a squeegee 805, and then heat treatment is performed at 50 to 350 degrees to form the conductive films 766a to 766d and the conductive film 767.

  Next, an insulating film 772 functioning as a protective film is formed by an SOG method, a droplet discharge method, or the like so as to cover the conductive films 766a to 766d and the conductive film 767 functioning as an antenna (FIG. 10B). The insulating film 772 is formed using a film containing carbon such as DLC (diamond-like carbon), a film containing silicon nitride, a film containing silicon nitride oxide, or an organic material, preferably an epoxy resin.

  Next, the insulating film is etched by photolithography or laser light irradiation so that the separation layer 702 is exposed, so that openings 773 and 774 are formed (FIG. 11A).

Next, the element formation layer 791 is peeled from the substrate 701. The element formation layer 791 is peeled off using a physical force after selectively irradiating the element formation layer 791 with laser light to form the openings 773 and 774 (FIG. 11A). Further, as another method, the openings 773 and 774 are formed to expose the release layer 702, and then an etchant is introduced, whereby the release may be performed after the release layer 702 is removed (FIG. 11B). ). As the etchant, a gas or liquid containing halogen fluoride or an interhalogen compound is used. For example, chlorine trifluoride (ClF ₃ ) is used as a gas containing halogen fluoride. Then, the element formation layer 791 is peeled from the substrate 701. Note that the element formation layer 791 here includes thin film transistors 744 to 748 and conductive films 766a to 766d functioning as antennas. Note that the peeling layer 702 may be partially left without being completely removed. By doing so, it is possible to suppress the consumption of the etching agent and shorten the processing time required for removing the release layer. Further, the element formation layer 791 can be held over the substrate 701 even after the peeling layer 702 is removed.

  The substrate 701 from which the element formation layer 791 has been peeled is preferably reused for cost reduction. The insulating film 772 is formed so that the element formation layer 791 is not scattered after the peeling layer 702 is removed. Since the element formation layer 791 is small and thin, the element formation layer 791 is not closely attached to the substrate 701 after the peeling layer 702 is removed, and thus is easily scattered. However, by forming the insulating film 772 over the element formation layer 791, the element formation layer 791 is weighted and scattering from the substrate 701 can be prevented. In addition, although the element formation layer 791 alone is thin and light, by forming the insulating film 772, the element formation layer 791 peeled off from the substrate 701 does not become a shape wound by stress or the like, and a certain degree of strength is secured. can do.

  Next, one surface of the element formation layer 791 is bonded to the first sheet material 775 and completely peeled from the substrate 701 (FIG. 12A). In the case where a part of the separation layer 702 is not removed and a part is left, the element formation layer is separated from the substrate 701 using physical means. Subsequently, a second sheet material 776 is provided on the other surface of the element formation layer 791, and then one or both of heat treatment and pressure treatment are performed, and the second sheet material 776 is attached. In addition, the first sheet material 775 is peeled off at the same time or after the second sheet material 776 is provided, and a third sheet material 777 is provided instead. Then, one or both of heat treatment and pressure treatment is performed, and the third sheet material 777 is bonded. Then, a semiconductor device sealed with the second sheet material 776 and the third sheet material 777 is completed (FIG. 12B).

  Note that the first sheet material 775 and the second sheet material 776 may be sealed, but the sheet material for peeling the element formation layer 791 from the substrate 701 and the element formation layer 791 are sealed. When a different sheet material is used for the sheet material, the element formation layer 791 is sealed with the second sheet material 776 and the third sheet material 777 as described above. This is because, for example, when the element forming layer 791 is peeled from the substrate 701, the first sheet material 775 may be adhered to the substrate 701 as well as the element forming layer 791. Effective when you want to use.

  As the second sheet material 776 and the third sheet material 777 used for sealing, a film made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, paper made of a fibrous material, a base film (polyester, A laminated film of an adhesive synthetic resin film (such as an acrylic synthetic resin or an epoxy synthetic resin) and the like can be used. In addition, the film is subjected to heat treatment and pressure treatment together with the object to be treated, and when the heat treatment and pressure treatment are performed, an adhesive layer provided on the outermost surface of the film or an outermost layer is used. The provided layer (not the adhesive layer) is melted by heat treatment and bonded by pressure. Further, an adhesive layer may be provided on the surface of the second sheet material 776 and the third sheet material 777, or the adhesive layer may not be provided. The adhesive layer corresponds to a layer containing an adhesive such as a thermosetting resin, an ultraviolet curable resin, an epoxy resin adhesive, or a resin additive. In addition, it is preferable to perform silica coating on the sheet material to be sealed in order to prevent moisture and the like from entering the inside after sealing. For example, a sheet material in which an adhesive layer, a film of polyester, etc. and a silica coat are laminated is used. be able to.

  Note that this embodiment mode can be freely combined with Embodiment Modes 1 to 3 described above. That is, the material and the formation method described in the above embodiment can be used in this embodiment, and the material and the formation method described in this embodiment can be used in the above embodiment.

(Embodiment 5)
In this embodiment mode, a method for simultaneously manufacturing a thin film transistor (TFT) used in a logic circuit portion such as a memory element (memory), a decoder, a selector, a writing circuit, and a reading circuit in a semiconductor device of the present invention is described with reference to FIGS. explain. Note that in this embodiment, an n-channel memory element 3040 having a floating gate, an n-channel TFT 3041, and a p-channel TFT 3042 are shown as examples of the memory element. The element group included is not limited to this. Further, this manufacturing method is an example, and the manufacturing method over an insulating substrate is not limited.

  First, base films 3001 and 3002 made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film are formed over a glass substrate 3000. For example, a silicon oxynitride film is formed as a base film 3001 with a thickness of 10 to 200 nm, and a silicon oxynitride silicon film is stacked as a base film 3002 with a thickness of 50 to 200 nm.

  The island-like semiconductor layers 3003 to 3005 are formed using a crystalline semiconductor film in which a semiconductor film having an amorphous structure is formed using a laser crystallization method or a thermal crystallization method. The island-like semiconductor layers 3003 to 3005 are formed to a thickness of 25 to 80 nm. There is no limitation on the material of the crystalline semiconductor film, but the crystalline semiconductor film is preferably formed of silicon or a silicon germanium (SiGe) alloy.

  Here, treatment for providing an overlap region for extracting charge on one side of the source region or the drain region of the semiconductor layer 3003 used for the memory element 3040 may be performed.

  Next, a gate insulating film 3006 is formed to cover the island-shaped semiconductor layers 3003 to 3005. The gate insulating film 3006 is formed of an insulating film containing silicon with a thickness of 10 to 80 nm by using a plasma CVD method or a sputtering method. In particular, in an OTP (One-time programmable) type nonvolatile memory, writing by hot electron injection and charge retention are important. Therefore, it is preferable that the gate insulating film has a thickness of 40 to 80 nm in which a tunnel current hardly flows.

  Then, first conductive films 3007 to 3009 are formed over the gate insulating film 3006 and removed by etching except for a region which later becomes a floating gate electrode and a region including a region which becomes a gate electrode of the normal TFTs 3041 and 3042. .

  Next, a second gate insulating film 3010 is formed. The second gate insulating film 3010 is formed of an insulating film containing silicon with a thickness of 10 to 80 nm by using a plasma CVD method or a sputtering method. The second gate insulating film 3010 is removed by etching except for a region where the memory element 3040 exists.

  Subsequently, second conductive films 3011 to 3013 are formed, and the stacked first conductive film 3007 / second gate insulating film 3010 / second conductive film 3011 (memory element 3040) or the stacked first film The conductive film 3008 / second conductive film 3012 and the first conductive film 3009 / second conductive film 3013 (ordinary TFTs 3041 and 3042) are etched at once, so that the floating gate electrode and the control gate electrode of the memory element 3040 , And gate electrodes of normal TFTs 3041 and 3042 are formed.

  In this embodiment, the first conductive films 3007 to 3009 are formed of TaN to a thickness of 50 to 100 nm, and the second conductive films 3011 to 3013 are formed of W to a thickness of 100 to 300 nm. These materials are not particularly limited, and any of these materials may be formed of an element selected from Ta, W, Ti, Mo, Al, Cu, or the like, or an alloy material or a compound material containing the element as a main component.

  Subsequently, doping for imparting n-type to the TFT used for the memory element 3040 is performed, so that first impurity regions 3014 and 3015 are formed. Next, doping for imparting p-type conductivity is performed on the p-channel TFT 3041 used in the logic circuit portion, so that second impurity regions 3016 and 3017 are formed. Subsequently, in order to form an LDD region of the n-channel TFT 3042 used in the logic circuit portion, doping for imparting n-type is performed, and third impurity regions 3018 and 3019 are formed. After that, sidewalls 3020 and 3021 are formed, and doping to impart n-type is performed on the n-channel TFT 3041 used in the logic circuit portion, so that fourth impurity regions 3022 and 3023 are formed. These doping methods may be performed by an ion doping method or an ion implantation method. Through the above steps, impurity regions are formed in each island-like semiconductor layer.

  Next, a step of activating the impurity element added to each island-like semiconductor layer is performed. This step is performed by a thermal annealing method using a furnace annealing furnace. In addition, a laser annealing method or a rapid thermal annealing method (RTA method) can be applied. Further, a heat treatment is performed at 300 to 450 ° C. for 1 to 12 hours in an atmosphere containing 3 to 100% hydrogen to perform a step of hydrogenating the island-shaped semiconductor layer. As another means of hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) may be performed.

Next, a first interlayer insulating film 3024 is formed using a silicon oxynitride film. The thickness of the first interlayer insulating film 3024 is set to 10 to 80 nm, which is the same as that of the gate insulating film. Subsequently, a second interlayer insulating film 3025 made of an organic insulating material such as acrylic is formed. Alternatively, an inorganic material can be used for the second interlayer insulating film 3025 instead of the organic insulating material. As the inorganic material, inorganic SiO ₂ , SiO ₂ (PCVD-SiO ₂ ) produced by a plasma CVD method, SOG (Spin on Glass; coated silicon oxide film), or the like is used. After forming the two interlayer insulating films, an etching process for forming a contact hole is performed.

  Then, electrodes 3026 and 3027 are formed in contact with the source and drain regions of the island-shaped semiconductor layer in the memory portion. Similarly, the electrodes 3028 to 3030 are formed in the logic circuit portion.

  As described above, the memory portion including the n-channel memory element 3040 having the floating gate and the logic circuit portion including the n-channel TFT 3041 having the LDD structure and the p-channel TFT 3042 having the single drain structure are formed over the same substrate. (FIG. 13).

Note that this embodiment mode can be freely combined with any of Embodiment Modes 1 to 4 described above.

(Embodiment 6)
In this embodiment mode, a structure different from the above embodiment mode of a semiconductor device of the present invention is described with reference to drawings. Specifically, a memory element provided in the semiconductor device will be described.

  As illustrated in FIG. 14, the memory portion 7580 includes a memory cell array 7560 in which memory elements are formed and a driver circuit. The driver circuit includes a column decoder 7510, a row decoder 7520, a read circuit 7540, a write circuit 7550, and a selector 7530.

  The memory cell array 7560 includes bit lines Bm (m = 1 to x), word lines Wn (n = 1 to y), and memory cells 7570 at the intersections of the bit lines and the word lines. Note that the memory cell 7570 may be an active type to which a transistor is connected or a passive type including only passive elements. In the case of the passive type, a memory element is formed in the memory cell 7570 by providing a memory element between a conductive film forming a bit line and a conductive film forming a word line. The bit line Bm is controlled by the selector 7530, and the word line Wn is controlled by the row decoder 7520.

  The column decoder 7510 receives an address signal designating an arbitrary bit line and gives a signal to the selector 7530. The selector 7530 receives a signal from the column decoder 7510 and selects a designated bit line. The row decoder 7520 receives the address signal designating an arbitrary word line and selects the designated word line. Through the above operation, one memory cell 7570 corresponding to the address signal is selected. The reading circuit 7540 reads and outputs information included in the selected memory cell. The writing circuit 7550 generates a voltage necessary for writing, and writes information by applying a voltage to the selected memory cell.

  Next, a circuit configuration of the memory cell 7570 will be described. In this embodiment, a memory cell including a memory element 7830 having a lower electrode and an upper electrode and a memory material layer interposed between the pair of electrodes will be described.

  A memory cell 7570 illustrated in FIG. 15A is an active memory cell including a transistor 7810 and a memory element 7830. For example, a thin film transistor can be used as the transistor 7810. A gate electrode of the transistor 7810 is connected to the word line Wy. One of a source electrode and a drain electrode of the transistor 7810 is connected to the bit line Bx, and the other is connected to the memory element 7830. A lower electrode of the memory element 7830 is electrically connected to one of a source electrode and a drain electrode of the transistor 7810. In addition, the upper electrode (equivalent to 7820) of the memory element 7830 can be shared by each memory element as a common electrode.

  Alternatively, as illustrated in FIG. 15B, a structure in which the memory element 7830 is connected to the diode 7840 may be used. The diode 7840 can employ a so-called diode connection structure in which one of a source electrode and a drain electrode of a transistor and a gate electrode are connected. As the diode 7840, a Schottky diode by a contact between a memory material layer and a lower electrode, a diode formed by stacking memory materials, or the like can be used.

  As the memory material layer, a material whose property or state is changed by an electric action, an optical action, a thermal action, or the like can be used. For example, a material whose property or state changes due to melting due to Joule heat, dielectric breakdown, or the like, and which can short-circuit the lower electrode and the upper electrode may be used. Therefore, the thickness of the memory material layer is 5 nm to 100 nm, preferably 10 nm to 60 nm. Such a memory material layer can be formed using an inorganic material or an organic material, and can be formed by an evaporation method, a spin coating method, a droplet discharge method, or the like.

  Examples of the inorganic material include silicon oxide, silicon nitride, and silicon oxynitride. Even with such an inorganic material, by controlling the film thickness, dielectric breakdown can be caused and the lower electrode and the upper electrode can be short-circuited.

  Examples of the organic material include 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (abbreviation: α-NPD) and 4,4′-bis [N- (3- Methylphenyl) -N-phenyl-amino] -biphenyl (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenyl-amino) -triphenylamine (abbreviation: TDATA), 4,4 ', 4' '-tris [N- (3-methylphenyl) -N-phenyl-amino] -triphenylamine (abbreviation: MTDATA) and 4,4'-bis (N- (4- (N, N- Aromatic amine-based compounds (that is, having a benzene ring-nitrogen bond) such as di-m-tolylamino) phenyl) -N-phenylamino) biphenyl (abbreviation: DNTPD), polyvinylcarbazole (abbreviation: PVK) and lids Cyanine (abbreviation: H2Pc), copper phthalocyanine (abbreviation: CuPc), or vanadyl phthalocyanine (abbreviation: VOPc), and can be used phthalocyanine compounds such as. These materials are substances having a high hole transporting property.

As other organic materials, for example, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h ] -Quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), etc. And bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) ₂ ) It is also possible to use materials such as metal complexes having oxazole and thiazole ligands such as it can. These materials are substances having a high electron transporting property.

  In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5- ( 4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2, Compounds such as 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can be used.

The memory material layer may have a single layer structure or a stacked structure. In the case of a laminated structure, a laminated structure can be selected from the above materials. Alternatively, the organic material and the light-emitting material may be stacked. As a light-emitting material, 4-dicyanomethylene-2-methyl-6- (1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (abbreviation: DCJT), 4-dicyanomethylene-2 -T-butyl-6- (1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran, periflanthene, 2,5-dicyano-1,4-bis (10-methoxy-1) , 1,7,7-tetramethyljulolidyl-9-enyl) benzene, N, N′-dimethylquinacridone (abbreviation: DMQd), coumarin 6, coumarin 545T, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃₎ ), 9,9′-bianthryl, 9,10-diphenylanthracene (abbreviation: DPA), 9,10-bis (2-naphthyl) anthracene (abbreviation: DNA), 2, 5, 8 , 11-tetra-t-butylperylene (abbreviation: TBP).

Alternatively, a layer in which the light emitting material is dispersed may be used. In the layer in which the light emitting material is dispersed, the base material includes an anthracene derivative such as 9,10-di (2-naphthyl) -2-tert-butylanthracene (abbreviation: t-BuDNA), 4,4′- Carbazole derivatives such as bis (N-carbazolyl) biphenyl (abbreviation: CBP), bis [2- (2-hydroxyphenyl) pyridinato] zinc (abbreviation: Znpp ₂ ), bis [2- (2-hydroxyphenyl) benzoxazola G] A metal complex such as zinc (abbreviation: ZnBOX) can be used. In addition, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), 9,10-bis (2-naphthyl) anthracene (abbreviation: DNA), bis (2-methyl-8-quinolinolato) -4-phenylphenolato- Aluminum (abbreviation: BAlq) or the like can be used.

  Such an organic material has a glass transition temperature (Tg) of 50 ° C. to 300 ° C., preferably 80 ° C. to 120 ° C., in order to change its properties by a thermal action or the like.

  Alternatively, a material in which a metal oxide is mixed in an organic material or a light emitting material may be used. Note that the material in which the metal oxide is mixed includes a state where the organic material or the light-emitting material and the metal oxide are mixed or stacked. Specifically, it refers to a state formed by a co-evaporation method using a plurality of evaporation sources. Such a material can be called an organic-inorganic composite material.

  For example, when a metal oxide is mixed with a substance having a high hole transporting property, the metal oxide includes vanadium oxide, molybdenum oxide, niobium oxide, rhenium oxide, tungsten oxide, ruthenium oxide, titanium oxide. It is preferable to use an oxide, chromium oxide, zirconium oxide, hafnium oxide, or tantalum oxide.

  In the case where a substance having a high electron transporting property and a metal oxide are mixed, it is preferable to use lithium oxide, calcium oxide, sodium oxide, potassium oxide, or magnesium oxide as the metal oxide.

  For the memory material layer, a material whose properties are changed by an electric action, an optical action, or a thermal action may be used. For example, a compound that generates an acid by absorbing light (photo acid generator) is used. Doped conjugated polymers can also be used. As the conjugated polymer, polyacetylenes, polyphenylene vinylenes, polythiophenes, polyanilines, polyphenylene ethynylenes, and the like can be used. As the photoacid generator, arylsulfonium salts, aryliodonium salts, o-nitrobenzyl tosylate, arylsulfonic acid p-nitrobenzyl esters, sulfonylacetophenones, Fe-allene complex PF6 salts and the like can be used.

  Next, an operation when data is written to the active memory cell 7570 as illustrated in FIG. 15A is described. Note that in this embodiment, the value stored in the memory element in the initial state is “0”, and the value stored in the memory element whose characteristics are changed by an electrical action or the like is “1”. In addition, the memory element in the initial state has a high resistance value, and the memory element after the change has a low resistance value.

  When writing, the column decoder 7510, the row decoder 7520, and the selector 7530 select the bit line Bm in the m-th column and the word line Wn in the n-th row and are included in the memory cell 7570 in the m-th column and the n-th row. The transistor 7810 is turned on.

  Subsequently, the write circuit 7550 applies a predetermined voltage to the bit line Bm in the m-th column for a predetermined period. The application voltage and the application time are such that the storage element 7830 changes from an initial state to a low resistance state. The voltage applied to the bit line Bm in the m-th column is transmitted to the lower electrode of the memory element 7830, and a potential difference is generated between the upper electrode and the upper electrode. Then, a current flows through the memory element 7830, the state of the memory material layer is changed, and the memory element characteristics are changed. Then, the value stored in the storage element 7830 is changed from “0” to “1”.

  Next, an operation for reading information will be described. As shown in FIG. 16, the reading circuit 7540 includes a resistance element 7900 and a sense amplifier 7910. Information is read by applying a voltage between the lower electrode and the upper electrode to determine whether the memory element is in an initial state or a low state after the change. Specifically, information can be read by a resistance division method.

  For example, the case where information is read from the memory element 7830 in the m-th column and the n-th row from the plurality of memory elements 7830 included in the memory cell array 7560 is described. First, the column decoder 7510, the row decoder 7520, and the selector 7530 select the bit line Bm in the m-th column and the word line Wn in the n-th row. Then, the transistor 7810 included in the memory cell 7570 arranged in the m-th column and the n-th row is turned on, and the memory element 7830 and the resistance element 7900 are connected in series. As a result, the potential at the point P shown in FIG. 16 is determined in accordance with the current characteristics of the memory element 7830.

  The potential at the point P when the memory element is in the initial state is V1, the potential at the point P when the memory element is in the low resistance state after the change is V2, and a reference potential Vref that satisfies V1> Vref> V2 is used. Thus, the information stored in the storage element can be read out. Specifically, when the memory element is in an initial state, the output potential of the sense amplifier 7910 is Lo, and when the memory element is in a low resistance state, the output potential of the sense amplifier 7910 is Hi.

  According to the above method, the voltage value is read by using the difference in resistance value of the memory element 7830 and the resistance division. However, the information included in the memory element 7830 may be read using a current value. Note that the reading circuit 7540 of the present invention is not limited to the above structure, and may have any structure as long as information stored in the memory element can be read.

  The memory element having such a configuration changes from “0” to “1”, and the change from “0” to “1” is irreversible, and thus becomes a write-once memory element. Therefore, forgery due to rewriting of information by a third party from the outside can be prevented.

  Initial information can be written to such a memory element 7830, and information from the sensor device can be sequentially written. The written information can be read out by wireless communication.

  Next, an example of a cross-sectional view of a memory element in which the memory cell portion 301 and the driver circuit portion 302 are formed over the insulating substrate 310 is shown (FIG. 17A).

  A base film 311 is provided over the insulating substrate 310. In the driver circuit portion 302, thin film transistors 320 and 321 are provided via a base film 311, and in the memory cell portion 301, a thin film transistor 621 is provided via a base film 311. Each thin film transistor includes a semiconductor film 312 etched into an island shape, a gate electrode 314 provided via a gate insulating film, an insulator (so-called sidewall) 313 provided on a side surface of the gate electrode, and a gate electrode 314. Yes. The semiconductor film 312 is formed to have a thickness of 0.2 μm or less, typically 40 nm to 170 nm, preferably 50 nm to 150 nm. Further, the insulating film 316 covering the sidewall 313 and the semiconductor film 312, and the electrode 315 connected to the impurity region formed in the semiconductor film 312 are provided. Note that since the electrode 315 is connected to the impurity region, a contact hole can be formed in the gate insulating film and the insulating film 316, a conductive film can be formed in the contact hole, and the conductive film can be selectively etched. . Note that the insulating substrate 310 can be a glass substrate, a quartz substrate, a substrate made of silicon, a metal substrate, or the like.

  Note that insulating films 317 and 318 are preferably provided in order to improve flatness. At this time, the insulating film 317 is preferably formed from an organic material, and the insulating film 318 is preferably formed from an inorganic material. In the case where the insulating films 317 and 318 are provided, the electrode 315 can be formed to be connected to the impurity regions through the contact holes in the insulating films 317 and 318.

  Further, an insulating film 325 is provided, and a lower electrode 327 is formed so as to be connected to the electrode 315. An insulating film 328 is formed which covers an end portion of the lower electrode 327 and has an opening provided so that the lower electrode 327 is exposed. A memory material layer 329 is formed in the opening, and an upper electrode 330 is formed. In this manner, the memory element 622 including the lower electrode 327, the memory material layer 329, and the upper electrode 330 is formed. The memory material layer 329 can be formed of an organic material or an inorganic material. The lower electrode 327 or the upper electrode 330 can be formed from a conductive material. For example, it can be formed of a film made of aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W), or silicon (Si), or an alloy film using these elements. Alternatively, a light-transmitting material such as indium tin oxide (ITO), indium tin oxide containing silicon oxide, or indium oxide containing 2 to 20% zinc oxide can be used.

  In addition, an insulating film 331 is preferably formed in order to further increase planarity and prevent an impurity element from entering.

  For the insulating film described in this embodiment, an inorganic material or an organic material can be used. As the inorganic material, silicon oxide or silicon nitride can be used. As the organic material, polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, siloxane, or polysilazane can be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Polysilazane is formed using a polymer material having a bond of silicon (Si) and nitrogen (N) as a starting material.

  FIG. 17B is a cross-sectional view of a memory element in which a memory material layer is formed in a contact hole 351 of an electrode 315, unlike FIG. Similarly to FIG. 17A, the memory element 622 can be formed by using the electrode 315 as the lower electrode and forming the memory material layer 329 and the upper electrode 330 over the electrode 315. After that, an insulating film 331 is formed. Since other structures are similar to those in FIG. 17A, description thereof is omitted.

  When the memory element is formed in the contact hole 351 in this manner, the memory unit can be reduced in size. In addition, since the memory electrode is not necessary, the number of manufacturing steps can be reduced, and a memory device with reduced cost can be provided.

Note that this embodiment mode can be freely combined with any of Embodiment Modes 1 to 5.

(Embodiment 7)
In this embodiment mode, a usage mode of a semiconductor device of the present invention will be described with reference to FIGS.

  The semiconductor device 80 has a function of communicating data without contact, and includes a power supply circuit 81, a clock generation circuit 82, a data demodulation circuit 83, a data modulation circuit 84, a control circuit 85 that controls other circuits, a storage circuit 86, and An antenna 87 is provided (FIG. 18A). Note that the number of memory circuits is not limited to one, and a plurality of memory circuits may be used. An SRAM, a flash memory, a ROM, an FeRAM, or the like or an organic compound layer described in the above embodiment is used for a memory element portion. Can do.

  A signal transmitted as a radio wave from the reader / writer 88 is converted into an AC electrical signal by electromagnetic induction in the antenna 87. In the power supply circuit 81, a power supply voltage is generated using an AC electrical signal, and the power supply voltage is supplied to each circuit using a power supply wiring. The clock generation circuit 82 generates various clock signals based on the AC signal input from the antenna 87 and supplies the generated clock signal to the control circuit 85. The demodulation circuit 83 demodulates the AC electric signal and supplies it to the control circuit 85. The control circuit 85 performs various arithmetic processes according to the input signal. The storage circuit 86 stores programs and data used in the control circuit 85, and can also be used as a work area during arithmetic processing. Then, data is sent from the control circuit 85 to the modulation circuit 84, and load modulation can be applied to the antenna 87 from the modulation circuit 84 in accordance with the data. The reader / writer 88 can read the data as a result by receiving the load modulation applied to the antenna 87 by radio waves.

  In addition, the semiconductor device may be a type in which the power supply voltage is supplied to each circuit by radio waves without mounting a power source (battery), or the power source (battery) is mounted and each circuit is supplied by radio waves and the power source (battery). The power supply voltage may be supplied.

  The semiconductor device of the present invention has a point of directivity depending on the point of non-contact communication, the point that multiple reading is possible, the point that data can be written, the point that it can be processed into various shapes, and the selected frequency. Has advantages such as a wide recognition range. The semiconductor device of the present invention is an IC tag that can identify individual information of a person or an object by non-contact wireless communication, a label that can be attached to a target by applying label processing, a list for an event or an amusement It can be applied to bands and the like. Further, the semiconductor device may be molded using a resin material, or may be directly fixed to a metal that hinders wireless communication. Furthermore, the semiconductor device of the present invention can be used for system operations such as an entrance / exit management system and a payment system.

  Next, one mode when a semiconductor device capable of exchanging data without contact is actually used will be described. A reader / writer 3200 is provided on a side surface of the portable terminal including the display portion 3210, and a semiconductor device 3230 is provided on a side surface of the article 3220 (FIG. 18B). When the reader / writer 3200 is held over the semiconductor device 3230 included in the product 3220, information about the product such as the description of the product, such as the raw material and origin of the product, the inspection result for each production process and the history of the distribution process, is displayed on the display unit 3210. Is done. Further, when the product 3260 is conveyed by the belt conveyor, the product 3260 can be inspected using the reader / writer 3200 and the semiconductor device 3250 provided in the product 3260 (FIG. 18C). In this manner, by using a semiconductor device in the system, information can be easily acquired, and high functionality and high added value are realized.

  Note that this embodiment mode can be freely combined with any of Embodiment Modes 1 to 6.

(Embodiment 8)
The application of the semiconductor device of the present invention is wide-ranging, and can be applied to any product that can be used for production and management by clarifying information such as the history of an object without contact. For example, banknotes, coins, securities, certificate documents, bearer bonds, packaging containers, books, recording media, personal belongings, vehicles, foods, clothing, health supplies, daily necessities, chemicals, etc. It can be provided and used in an electronic device or the like. These examples will be described with reference to FIG.

  Banknotes and coins are money that circulates in the market, and include those that are used in the same way as money in a specific area (cash vouchers), commemorative coins, and the like. Securities refer to checks, securities, promissory notes, and the like (see FIG. 19A). The certificate refers to a driver's license, a resident card, etc. (see FIG. 19B). Bearer bonds refer to stamps, gift cards, various gift certificates, and the like (see FIG. 19C). Packaging containers refer to wrapping paper for lunch boxes, plastic bottles, and the like (see FIG. 19D). Books refer to books, books, and the like (see FIG. 19E). The recording media refer to DVD software, video tapes, and the like (see FIG. 19F). The vehicles refer to vehicles such as bicycles, ships, and the like (see FIG. 19G). Personal belongings refer to bags, glasses, and the like (see FIG. 19H). Foods refer to food products, beverages, and the like. Clothing refers to clothing, footwear, and the like. Health supplies refer to medical equipment, health equipment, and the like. Livingware refers to furniture, lighting equipment, and the like. Chemicals refer to pharmaceuticals, agricultural chemicals, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (TV receivers, flat-screen TV receivers), mobile phones, and the like.

  Forgery can be prevented by providing the semiconductor device shown in the above embodiment mode on bills, coins, securities, certificates, bearer bonds, or the like. In addition, by providing the semiconductor devices described in the above embodiments in personal items such as packaging containers, books, recording media, personal items, foods, daily necessities, electronic devices, inspection systems, rental store systems, etc. Can be made more efficient. By providing the semiconductor device described in the above embodiment to vehicles, health supplies, medicines, and the like, counterfeiting and theft prevention can be prevented. As a method for providing the semiconductor device, the semiconductor device is provided on the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin. Further, when writing (additional writing) is performed by applying an optical action later, it is preferable to form the transparent element so that light can be applied to the portion of the memory element provided on the chip. Furthermore, forgery can be effectively prevented by using a memory element in which data once written cannot be rewritten. In addition, problems such as privacy after a user purchases a product can be solved by providing a system for erasing data stored in a memory element provided in a semiconductor device.

  As described above, by providing the semiconductor device described in the above embodiment in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., an inspection system, a rental store system, etc. Can be made more efficient. Further, forgery or theft can be prevented by providing the semiconductor device described in the above embodiment mode in a vehicle. Moreover, by embedding it in creatures such as animals, it is possible to easily identify individual creatures. For example, by embedding the semiconductor device shown in the above embodiment with a sensor in a living creature such as livestock, it is possible to easily manage the current health condition such as body temperature as well as the year of birth, gender or type. It becomes. Further, by controlling the communication distance to be short, it is possible to prevent a third party from seeing it.

  As described above, the semiconductor device of the present invention can be provided and used in any device. Note that this embodiment mode can be freely combined with any of Embodiment Modes 1 to 7.

FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention.

Explanation of symbols

80 Semiconductor Device 81 Power Supply Circuit 82 Clock Generation Circuit 83 Demodulation Circuit 84 Modulation Circuit 85 Control Circuit 86 Memory Circuit 87 Antenna 88 Reader / Writer 301 Memory Cell Unit 302 Drive Circuit Unit 310 Insulating Substrate 311 Base Film 312 Semiconductor Film 313 Side Wall 314 Gate Electrode 315 Electrode 316 Insulating film 317 Insulating film 318 Insulating film 320 Thin film transistor 325 Insulating film 327 Lower electrode 328 Insulating film 329 Memory material layer 330 Upper electrode 331 Insulating film 351 Contact hole 401 Substrate 402 Element group 403 Conductive film 404 Conductive film 406 Insulating film 407 conductive film 409 transistor 410 switching means 420 switching means 421 end 621 thin film transistor 622 memory element 701 substrate 702 release layer 703 insulating film 704 amorphous semiconductor 705 Gate insulating film 706 Crystalline semiconductor film 707 Crystalline semiconductor film 711 N-type impurity region 712 P-type impurity region 716 Conductive film 726 N-type impurity region 727 N-type impurity region 734 Insulating film 739 Insulating film 744 Thin film transistor 745 Thin film transistor 749 Insulating film 750 Insulating film 751 Insulating film 752 Conductive film 762 Insulating film 765 Conductive film 767 Conductive film 772 Insulating film 773 Opening 775 Sheet material 776 Sheet material 777 Sheet material 780 Channel forming region 781 Channel forming region 783 Memory element 785 P-type impurity region 786 Conductive film 789 Memory element portion 791 Element formation layer 802 Opening 805 Squeegee 806 Paste 3000 Glass substrate 3001 Base film 3002 Base film 3003 Semiconductor layer 3003 Semiconductor layer 3006 Gate insulating film 3007 Conductive film 3008 first conductive film 3009 first conductive film 3010 gate insulating film 3011 second conductive film 3012 second conductive film 3013 second conductive film 3014 impurity region 3016 impurity region 3018 impurity region 3020 sidewall 3022 Impurity region 3024 Interlayer insulating film 3025 Interlayer insulating film 3026 Electrode 3028 Electrode 3040 Storage element 3200 Reader / writer 3210 Display unit 3220 Product 3230 Semiconductor device 3250 Semiconductor device 3260 Product 405a End 405b End 410a Transistor 7510 Column decoder 7520 Row decoder 7530 Selector 7540 circuit 7550 circuit 7560 memory cell array 7570 memory cell 7580 memory portion 766a conductive film 7810 transistor 7830 memory element 7840 diode De 7900 resistance element 7910 sense amplifier

Claims (13)

Product management method for protecting the consumer's privacy by mounting a semiconductor device capable of transmitting and receiving data in a contactless manner on a product, and controlling the communication distance of the semiconductor device after the consumer purchases the product Because
The semiconductor device includes:
A substrate,
The element group having a plurality of transistors provided in the base plate,
A first conductive film functioning as an antenna provided above the element group, and a second conductive film disposed surrounding the first conductive film;
The first conductive film is provided in a coil shape,
The second conductive film has a first end and a second end,
The product management method, wherein the first end and the second end are connected via a switching means. Product management method for protecting the consumer's privacy by mounting a semiconductor device capable of transmitting and receiving data in a contactless manner on a product, and controlling the communication distance of the semiconductor device after the consumer purchases the product Because
The semiconductor device includes:
A substrate,
The element group having a plurality of transistors provided in the base plate,
A first conductive film functioning as an antenna provided above the element group;
A second conductive film having a first end and a second end and disposed surrounding the first conductive film;
A third conductive film provided via an insulating film so as to cover the first end and the second end;
The first conductive film is provided in a coil shape, and both ends of the first conductive film are electrically connected to the element group,
The product management method, wherein the first end and the second end are insulated. Product management method for protecting the consumer's privacy by mounting a semiconductor device capable of transmitting and receiving data in a contactless manner on a product, and controlling the communication distance of the semiconductor device after the consumer purchases the product Because
The semiconductor device includes:
A substrate,
The element group having a plurality of transistors provided in the base plate,
A first conductive film functioning as an antenna provided above the element group;
A second conductive film having a first end and a second end and disposed surrounding the first conductive film;
A third conductive film provided via an insulating film so as to cover the first end and the second end;
The first conductive film is provided in a coil shape, and both ends of the first conductive film are electrically connected to the element group,
A method for managing a product, comprising: controlling a communication distance depending on whether or not the first end and the second end are electrically connected. Product management method for protecting the consumer's privacy by mounting a semiconductor device capable of transmitting and receiving data in a contactless manner on a product, and controlling the communication distance of the semiconductor device after the consumer purchases the product Because
The semiconductor device includes:
A substrate,
The element group having a plurality of transistors provided in the base plate,
A first conductive film functioning as an antenna provided above the element group;
A second conductive film having a first end and a second end and disposed surrounding the first conductive film;
A third conductive film provided via an insulating film so as to cover the first end and the second end;
The first conductive film is provided in a coil shape,
One of said 1st edge part and said 2nd edge part, and said 3rd electrically conductive film are electrically connected, and the other is insulated , The management method of the goods characterized by the above-mentioned. Product management method for protecting the consumer's privacy by mounting a semiconductor device capable of transmitting and receiving data in a contactless manner on a product, and controlling the communication distance of the semiconductor device after the consumer purchases the product Because
The semiconductor device includes:
A substrate,
The element group having a plurality of transistors provided in the base plate,
A first conductive film functioning as an antenna provided above the element group;
A second conductive film having a first end and a second end and disposed surrounding the first conductive film;
A third conductive film provided via an insulating film so as to cover the first end and the second end;
The first conductive film is provided in a coil shape,
A method for managing a product, comprising: controlling a communication distance by electrically connecting the first end portion and the second end portion to the third conductive film. In claim 5,
When performing the control of the communication distance, the third conductive film positioned above the first end and the second end is selectively irradiated with laser light, respectively. A product management method comprising melting the conductive film and the insulating film to electrically connect each of the first end portion, the second end portion, and the third conductive film. In claim 5,
When the communication distance is controlled, the third conductive film is selectively connected to the third conductive film positioned above the first end and the second end. The first end portion, the second end portion, and the third conductive film are electrically connected to each other by being pushed through the film, the insulating film, and a part of the second conductive film. A method for managing merchandise, comprising: A method for managing a dangerous substance, wherein a non-contact semiconductor device capable of transmitting and receiving data is mounted on a dangerous substance, and the communication distance of the semiconductor device is controlled when managing the dangerous substance,
The semiconductor device includes:
A substrate,
The element group having a plurality of transistors provided in the base plate,
A first conductive film functioning as an antenna provided above the element group, and an annular second conductive film disposed to surround the first conductive film;
The first conductive film is provided in a coil shape,
A dangerous substance management method , wherein a communication distance is controlled by removing a part of the second conductive film. Product management method for protecting the consumer's privacy by mounting a semiconductor device capable of transmitting and receiving data in a contactless manner on a product, and controlling the communication distance of the semiconductor device after the consumer purchases the product Because
The semiconductor device includes:
A substrate,
The element group having a plurality of transistors provided in the base plate,
A first conductive film functioning as an antenna provided above the element group, and a second conductive film disposed surrounding the first conductive film;
The first conductive film is provided in a coil shape,
The second conductive film has a first end and a second end, and the first end and the second end are provided in an annular shape via any of the plurality of transistors. The management method of the goods characterized by being characterized. Product management method for protecting the consumer's privacy by mounting a semiconductor device capable of transmitting and receiving data in a contactless manner on a product, and controlling the communication distance of the semiconductor device after the consumer purchases the product Because
The semiconductor device includes:
A substrate,
The element group having a plurality of transistors provided in the base plate,
A first conductive film functioning as an antenna provided above the element group and a plurality of second conductive films disposed surrounding the first conductive film functioning as the antenna;
The first conductive film functioning as the antenna is provided in a coil shape,
Each of the plurality of second conductive films has a first end and a second end, and the first end and the second end are one of the plurality of transistors. A product management method, wherein the product is provided in a ring shape. In claim 9 or claim 10 ,
Administration of the product, characterized in that one of said first end and said second end connected to the source region of one of the transistors in the plurality of transistors, which and connected the other is a drain region Way . In any one of Claim 1 thru | or Claim 7, Claim 9 thru | or 11 ,
The element group management method of the product being characterized by having a non-volatile memory. In claim 12 ,
The memory is
A plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction perpendicular to the first direction;
A memory cell comprising a storage element;
A memory cell array comprising a plurality of the memory cells,
The storage element management method of the product being characterized in that it has an organic compound layer provided between the conductive layer constituting the conductive layer and the word lines constituting the bit line.

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