JP4544355B2 - Pixel circuit, driving method thereof, display device, and driving method thereof - Google Patents

Description

  The present invention relates to an active matrix display device using a light emitting element for a pixel and a driving method thereof. The present invention also relates to a pixel circuit and a driving method thereof.

  In recent years, development of flat self-luminous display devices using organic EL devices as light-emitting elements has become active. An organic EL device is a device that utilizes the phenomenon of light emission when an electric field is applied to an organic thin film. Since the organic EL device is driven at an applied voltage of 10 V or less, it has low power consumption. In addition, since the organic EL device is a self-luminous element that emits light, it does not require an illumination member and can be easily reduced in weight and thickness. Furthermore, since the response speed of the organic EL device is as high as several μs, an afterimage does not occur when displaying a moving image.

Among planar self-luminous display devices that use organic EL devices as pixels, active matrix display devices in which thin film transistors are integrated and formed as driving elements in each pixel are particularly active. An active matrix type flat self-luminous display device is described in, for example, the following Patent Documents 1 to 5.
JP 2003-255856 A JP 2003-271095 A JP 2004-133240 A JP 2004-029791 A JP 2004-093682 A JP 2004-295131 A

  However, in the conventional active matrix type flat self-luminous display device, the threshold voltage and mobility of the transistor driving the light emitting element vary due to process variations. In addition, the characteristics of the organic EL device vary with time. Such variation in characteristics of the driving transistor and characteristic variation of the organic EL device affect the light emission luminance. In order to uniformly control the light emission luminance over the entire screen of the display device, it is necessary to correct the above-described characteristic variation of the transistor and the organic EL device in each pixel circuit. Conventionally, a display device having such a correction function for each pixel has been proposed. However, a conventional pixel circuit having a correction function requires a wiring for supplying a correction potential, a switching transistor, and a switching pulse, and the configuration of the pixel circuit is complicated. Since there are many components of the pixel circuit, it has been an obstacle to high-definition display.

  SUMMARY OF THE INVENTION In view of the above-described problems of the conventional technology, an object of the present invention is to provide a display device and a driving method thereof that enable high definition display by simplifying a pixel circuit. In order to achieve this purpose, the following measures were taken. That is, a pixel circuit according to the present invention includes a light emitting element, a sampling transistor, a driving transistor, and a storage capacitor. The sampling transistor has a gate connected to a scanning line, and has one of a source and a drain. Is connected to the signal line, the other is connected to the gate of the driving transistor, and one of the source and drain of the driving transistor is connected to the light emitting element, and the other is connected to the power supply line. Is switched between the first potential and the second potential, and the storage capacitor is connected between one of the source and drain of the driving transistor and the gate, and the driving transistor is held in the storage capacitor A driving current is passed through the light emitting element in accordance with a signal potential, and the sampling transistor is in a conductive state and is different from the second potential. While the potential is supplied to the signal line, the potential of the power supply line is changed from the second potential to the first potential, and the signal potential is supplied to the signal line while the sampling transistor is conductive. During this time, the signal potential is held in the holding capacitor.

  Preferably, while the sampling transistor is conducting, and while the reference potential between the first potential and the second potential is supplied to the signal line, the potential of the power supply line is From the second potential to the first potential. Further, the reference potential is written to one end of the storage capacitor, the second potential is written to the other end, and then the reference potential is supplied to the signal line while the sampling transistor is conductive. In addition, the potential of the power supply line is changed from the second potential to the first potential. In this case, the reference potential is written to one end of the storage capacitor, the second potential is written to the other end, and the potential difference between both ends is set to be larger than the threshold voltage of the driving transistor, and then the sampling transistor is turned on. While the reference potential is supplied to the signal line, the potential of the power supply line is changed from the second potential to the first potential, and the potential of the other end of the storage capacitor is set to one end of the storage capacitor. Vary toward the potential. Further, the scanning lines are scanned line by line, and the power supply lines are also scanned in accordance with the line sequential scanning, so that the potential of the power supply line is sequentially switched from the second potential to the first potential.

  The display device according to the present invention includes a pixel array section and a drive section for driving the pixel array section, and the pixel array section is arranged at a portion where the row-shaped scanning lines and the column-shaped signal lines intersect with each other. The pixel includes a light emitting element, a sampling transistor, a driving transistor, and a storage capacitor. The sampling transistor has a gate connected to the scanning line, and One of the source and the drain is connected to the signal line, the other is connected to the gate of the driving transistor, and the driving transistor has one of the source and the drain connected to the light emitting element and the other connected to the power supply line The storage capacitor is connected between one of the source and the drain and the gate of the driving transistor, and the driving unit supplies a reference potential or a signal potential. A signal supply circuit; and a power supply scanner for supplying a first potential and a second potential to the power supply line, wherein the driving transistor is supplied with a current from the power supply line and has a signal potential held in the holding capacitor. Accordingly, a driving current is supplied to the light emitting element, and the potential of the power supply line is supplied while the sampling transistor is conductive and a reference potential different from the second potential is supplied to the signal line. Is changed from the second potential to the first potential, and the signal potential is applied to the storage capacitor while the sampling transistor is conducting and the signal potential is supplied to the signal line. Retained.

  Preferably, while the sampling transistor is conducting, and while the reference potential between the first potential and the second potential is supplied to the signal line, the potential of the power supply line is From the second potential to the first potential. In one embodiment, the reference potential is written to one end of the storage capacitor, the second potential is written to the other end, and then the reference potential is supplied to the signal line while the sampling transistor is conductive. During this period, the potential of the power supply line is changed from the second potential to the first potential. In this case, the reference potential is written to one end of the storage capacitor, the second potential is written to the other end, and the potential difference between both ends is set to be larger than the threshold voltage of the driving transistor, and then the sampling transistor is turned on. While the reference potential is supplied to the signal line, the potential of the power supply line is changed from the second potential to the first potential, and the potential of the other end of the storage capacitor is set to one end of the storage capacitor. Vary toward the potential. The power supply scanner scans each power supply line sequentially and sequentially switches the potential of each power supply line from the second potential to the first potential.

  The display device according to the present invention includes a threshold voltage correction function, a mobility correction function, a bootstrap function, and the like for each pixel. The threshold voltage variation of the driving transistor can be corrected by the threshold voltage correction function. Similarly, the mobility variation of the driving transistor can be corrected by the mobility correction function. In addition, by the bootstrap operation of the storage capacitor at the time of light emission, it is possible to always maintain a constant light emission luminance regardless of fluctuations in the characteristics of the organic EL device. That is, even if the current-voltage characteristics of the organic EL device change with time, the gate-source voltage of the driving transistor is kept constant by the bootstrap holding capacitor, so that the light emission luminance can be kept constant.

  In the present invention, since the above-described threshold voltage correction function, mobility correction function, bootstrap operation, and the like are incorporated in each pixel, a power supply voltage supplied to each pixel is used as a switching pulse. By making the power supply voltage into a switching pulse, a switching transistor for threshold voltage correction and a scanning line for controlling the gate thereof become unnecessary. As a result, the constituent elements and wiring of the pixel circuit can be greatly reduced, the pixel area can be reduced, and high definition of the display can be achieved. Further, by performing the mobility correction simultaneously with the sampling of the video signal potential, the mobility correction period can be adjusted by the phase difference between the video signal and the sampling pulse. Furthermore, the mobility correction period can automatically follow the level of the video signal. In addition, since the number of constituent elements of the pixel is small, the capacitance parasitic to the gate of the driving transistor is reduced, so that the bootstrap operation is ensured, and the correction capability with respect to the temporal variation of the organic EL device can be improved.

  According to the present invention, in an active matrix display device using a light emitting element such as an organic EL device as a pixel, each pixel has a threshold voltage correction function and a mobility correction function of a driving transistor, and a temporal variation correction of the organic EL device. A function (bootstrap operation) is provided, and high-quality image quality can be obtained. In particular, with regard to mobility correction, an appropriate correction period can be automatically set following the video signal potential, so that mobility correction can be performed regardless of the brightness and design of the image. Conventionally, a pixel circuit having such a correction function has a large layout area due to a large number of constituent elements, which is not suitable for high-definition display. However, in the present invention, the number of constituent elements is changed by switching the power supply voltage. Thus, the number of wirings can be reduced, and the layout area of the pixel can be reduced. As described above, a high-quality and high-definition flat display can be provided.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, in order to facilitate understanding of the present invention and to clarify the background, a general configuration of a display device will be briefly described with reference to FIG. FIG. 1 is a schematic circuit diagram showing one pixel of a general display device. As shown in the figure, in this pixel circuit, a sampling transistor 1A is arranged at the intersection of the scanning line 1E and the signal line 1F arranged orthogonally. The sampling transistor 1A is N-type, and has a gate connected to the scanning line 1E and a drain connected to the signal line 1F. One electrode of the storage capacitor 1C and the gate of the driving transistor 1B are connected to the source of the sampling transistor 1A. The driving transistor 1B is N-type, the power supply line 1G is connected to the drain, and the anode of the light emitting element 1D is connected to the source. The other electrode of the storage capacitor 1C and the cathode of the light emitting element 1D are connected to the ground wiring 1H.

  FIG. 2 is a timing chart for explaining the operation of the pixel circuit shown in FIG. This timing chart represents an operation of sampling the potential (video signal line potential) of the video signal supplied from the signal line (1F) and setting the light emitting element 1D made of an organic EL device to a light emitting state. When the potential of the scanning line (1E) (scanning line potential) transitions to a high level, the sampling transistor (1A) is turned on, and the video signal line potential is charged in the storage capacitor (1C). As a result, the gate potential (Vg) of the driving transistor (1B) starts to rise and the drain current starts to flow. Therefore, the anode potential of the light emitting element (1D) rises and light emission starts. Thereafter, when the scanning line potential transitions to a low level, the video signal line potential is held in the holding capacitor (1C), the gate potential of the driving transistor (1B) becomes constant, and the light emission luminance is kept constant until the next frame. .

  However, due to variations in the manufacturing process of the driving transistor (1B), there are variations in characteristics such as threshold voltage and mobility for each pixel. Due to this characteristic variation, even if the same gate potential is applied to the driving transistor (1B), the drain current (driving current) varies from pixel to pixel, resulting in variations in light emission luminance. In addition, the anode potential of the light emitting element (1D) varies due to the temporal variation of the characteristics of the light emitting element (1D) made of an organic EL device or the like. The fluctuation of the anode potential appears as a fluctuation of the gate-source voltage of the driving transistor (1B) and causes a fluctuation of the drain current (driving current). Such fluctuations in the drive current due to various causes appear as variations in light emission luminance for each pixel, resulting in degradation of image quality.

  FIG. 3A is a block diagram showing the overall configuration of the display device according to the present invention. As shown in the figure, the display device 100 includes a pixel array unit 102 and driving units (103, 104, 105) for driving the pixel array unit 102. The pixel array unit 102 includes row-like scanning lines WSL101 to 10m, column-like signal lines DTL101 to 10n, matrix-like pixels (PXLC) 101 arranged at portions where both intersect, and each pixel 101 in each row. Correspondingly arranged power supply lines DSL101 to 10m are provided. The drive unit (103, 104, 105) supplies a control signal to each of the scanning lines WSL101 to 10m in order to scan the pixels 101 line-sequentially in units of rows, and this line-sequential scanning. In addition, a power supply scanner (DSCN) 105 that supplies power supply voltages to be switched between the first potential and the second potential to the power supply lines DSL101 to 10m, and video signals to the column-shaped signal lines DTL101 to 10n in accordance with the line sequential scanning. And a signal selector (horizontal selector HSEL) 103 for supplying a reference potential and a reference potential.

  FIG. 3B is a circuit diagram showing a specific configuration and connection relationship of the pixel 101 included in the display device 100 shown in FIG. 3A. As illustrated, the pixel 101 includes a light emitting element 3D represented by an organic EL device or the like, a sampling transistor 3A, a driving transistor 3B, and a storage capacitor 3C. Sampling transistor 3A has its gate connected to corresponding scanning line WSL101, one of its source and drain connected to corresponding signal line DTL101, and the other connected to gate g of driving transistor 3B. One of the source s and the drain d of the driving transistor 3B is connected to the light emitting element 3D, and the other is connected to the corresponding power supply line DSL101. In the present embodiment, the drain d of the driving transistor 3B is connected to the power supply line DSL101, while the source s is connected to the anode of the light emitting element 3D. The cathode of the light emitting element 3D is connected to the ground wiring 3H. The ground wiring 3H is wired in common to all the pixels 101. The storage capacitor 3C is connected between the source s and the gate g of the driving transistor 3B.

  In such a configuration, the sampling transistor 3A is turned on in response to the control signal supplied from the scanning line WSL101, samples the signal potential supplied from the signal line DTL101, and holds it in the holding capacitor 3C. The driving transistor 3B is supplied with current from the power supply line DSL101 at the first potential, and causes a driving current to flow to the light emitting element 3D in accordance with the signal potential held in the holding capacitor 3C. The power supply scanner (DSCN) 105 sets the power supply line DSL101 to the first potential and the second potential while the signal selector (HSEL) 103 supplies the reference potential to the signal line DTL101 after the sampling transistor 3A is turned on. Thus, a voltage corresponding to the threshold voltage Vth of the driving transistor 3B is held in the holding capacitor 3C. With this threshold voltage correction function, the display device 100 can cancel the influence of the threshold voltage of the driving transistor 3B, which varies from pixel to pixel.

  The pixel 101 illustrated in FIG. 3B has a mobility correction function in addition to the threshold voltage correction function described above. That is, the signal selector (HSEL) 103 switches the signal line DTL101 from the reference potential to the signal potential at the first timing after the sampling transistor 3A is turned on, while the main scanner (WSCN) 104 is switched after the first timing. By canceling the application of the control signal to the scanning line WSL101 at the second timing to place the sampling transistor 3A in the non-passing state and appropriately setting the period between the first and second timings, the holding capacitor 3C When the signal potential is held, correction for the mobility μ of the driving transistor 3B is added to the signal potential. In this case, the drive unit (103, 104, 105) adjusts the relative phase difference between the video signal supplied from the signal selector 103 and the control signal supplied from the main scanner 104, and the first and second timings are adjusted. (Period of mobility correction) can be optimized. The signal selector 103 can also automatically follow the signal potential in the mobility correction period between the first and second timings by inclining the rising edge of the video signal switching from the reference potential to the signal potential. .

  The pixel circuit 101 shown in FIG. 3B further has a bootstrap function. That is, the main scanner (WSCN) 104 cancels the application of the control signal to the scanning line WSL101 at the stage where the signal potential is held in the holding capacitor 3C, sets the sampling transistor 3A in a non-conductive state, and the gate g of the driving transistor 3B. Is electrically disconnected from the signal line DTL101, so that the gate potential (Vg) is interlocked with the fluctuation of the source potential (Vs) of the driving transistor 3B, and the voltage Vgs between the gate g and the source s is kept constant. I can do it.

  FIG. 4A is a timing chart for explaining the operation of the pixel 101 shown in FIG. 3B. The change in the potential of the scanning line (WSL 101), the change in the potential of the power supply line (DSL 101), and the change in the potential of the signal line (DTL 101) are shown with a common time axis. In parallel with these potential changes, changes in the gate potential (Vg) and source potential (Vs) of the driving transistor 3B are also shown.

  In this timing chart, periods are divided for convenience as (B) to (G) in accordance with the transition of the operation of the pixel 101. In the light emission period (B), the light emitting element 3D is in a light emitting state. In the first period (C) after entering the new field of the line sequential scanning, the gate potential Vg of the driving transistor is initialized. In the next period (D), the source potential Vs of the driving transistor is also initialized. Thus, by preparing the gate potential Vg and the source potential Vs of the driving transistor 3B, the preparation for the threshold voltage correction operation is completed. Subsequently, a threshold voltage correction operation is actually performed in the threshold correction period (E), and a voltage corresponding to the threshold voltage Vth is held between the gate g and the source s of the driving transistor 3B. Actually, a voltage corresponding to Vth is written in the holding capacitor 3C connected between the gate g and the source s of the driving transistor 3B. Thereafter, the process proceeds to the sampling period / mobility correction period (F), and the signal potential Vin of the video signal is written to the holding capacitor 3C in a form added to Vth, and the mobility correction voltage ΔV is held in the holding capacitor 3C. Is subtracted from the measured voltage. Thereafter, the light emitting element emits light at a luminance corresponding to the signal voltage Vin in the light emission period (G). At this time, since the signal voltage Vin is adjusted by a voltage corresponding to the threshold voltage Vth and the mobility correction voltage ΔV, the light emission luminance of the light emitting element 3D varies in the threshold voltage Vth and the mobility μ of the driving transistor 3B. Will not be affected. Note that a bootstrap operation is performed at the beginning of the light emission period (G), and the gate potential Vg and the source potential Vs of the driving transistor 3B are maintained while maintaining the gate-source voltage Vgs = Vin + Vth−ΔV of the driving transistor 3B constant. Rises.

  4B to 4G, the operation of the pixel 101 shown in FIG. 3B will be described in detail. 4B to 4G correspond to the periods (B) to (G) of the timing chart shown in FIG. 4A, respectively. For ease of understanding, FIGS. 4B to 4G show the capacitive component of the light emitting element 3D as the capacitive element 3I for convenience of explanation. First, as shown in FIG. 4B, in the light emission period (B), the power supply line DSL101 is at the high potential Vcc_H (first potential), and the driving transistor 3B supplies the driving current Ids to the light emitting element 3D. As shown in the figure, the drive current Ids flows from the power supply line DSL101 at the high potential Vcc_H through the light emitting element 3D through the drive transistor 3B and flows into the common ground wiring 3H.

  Subsequently, when the period (C) is entered, as shown in FIG. 4C, the sampling transistor 3A is turned on by the transition of the scanning line WSL101 to the high potential side, and the gate potential Vg of the driving transistor 3B is equal to the video signal line DTL101. Is initialized (reset) to the reference potential Vo.

  Next, in the period (D), as shown in FIG. 4D, the potential Vcc_L (second potential) at which the potential of the power supply line DSL101 is sufficiently lower than the reference potential Vo of the video signal line DTL101 from the high potential Vcc_H (first potential). Transition to. As a result, the source potential Vs of the driving transistor 3B is initialized (reset) to a potential Vcc_L that is sufficiently lower than the reference potential Vo of the video signal line DTL101. Specifically, the gate-source voltage Vgs (the difference between the gate potential Vg and the source potential Vs) of the driving transistor 3B is higher than the threshold voltage Vth of the driving transistor 3B, so that the low potential Vcc_L ( (Second potential) is set.

  Next, in the threshold correction period (E), as shown in FIG. 4E, the potential of the power supply line DSL101 transits from the low potential Vcc_L to the high potential Vcc_H, and the source potential Vs of the driving transistor 3B increases. Start. Eventually, the current is cut off when the gate-source voltage Vgs of the driving transistor 3B reaches the threshold voltage Vth. In this way, a voltage corresponding to the threshold voltage Vth of the driving transistor 3B is written to the storage capacitor 3C. This is the threshold voltage correction operation. At this time, the potential of the common ground wiring 3H is set so that the light emitting element 3D is cut off in order to prevent the current from flowing exclusively to the holding capacitor 3C and not to the light emitting element 3D.

  Next, in the sampling period / mobility correction period (F), as shown in FIG. 4F, the potential of the video signal line DTL101 transits from the reference potential Vo to the signal potential Vin at the first timing, as shown in FIG. 4F, and the driving transistor 3B. The gate potential Vg becomes Vin. At this time, since the light emitting element 3D is initially in a cutoff state (high impedance state), the drain current Ids of the driving transistor 3B flows into the parasitic capacitance 3I of the light emitting element. Thereby, the parasitic capacitance 3I of the light emitting element starts to be charged. Therefore, the source potential Vs of the driving transistor 3B starts to rise, and the gate-source voltage Vgs of the driving transistor 3B becomes Vin + Vth−ΔV at the second timing. In this way, the signal potential Vin is sampled and the correction amount ΔV is adjusted. As Vin is higher, Ids increases and the absolute value of ΔV also increases. Therefore, mobility correction according to the light emission luminance level can be performed. When Vin is constant, the absolute value of ΔV increases as the mobility μ of the driving transistor 3B increases. In other words, since the negative feedback amount ΔV increases as the mobility μ increases, it is possible to remove variations in the mobility μ for each pixel.

  Finally, in the light emission period (G), as shown in FIG. 4G, the scanning line WSL101 transitions to the low potential side, and the sampling transistor 3A is turned off. As a result, the gate g of the driving transistor 3B is disconnected from the signal line DTL101. At the same time, the drain current Ids starts to flow through the light emitting element 3D. As a result, the anode potential of the light emitting element 3D rises according to the drive current Ids. The increase in the anode potential of the light emitting element 3D is nothing but the increase in the source potential Vs of the driving transistor 3B. When the source potential Vs of the driving transistor 3B rises, the gate potential Vg of the driving transistor 3B also rises in conjunction with the bootstrap operation of the storage capacitor 3C. The increase amount of the gate potential Vg is equal to the increase amount of the source potential Vs. Therefore, the gate-source voltage Vgs of the driving transistor 3B is kept constant at Vin + Vth−ΔV during the light emission period.

FIG. 5 is a graph showing the current-voltage characteristics of the driving transistor. In particular, the drain-source current Ids when the driving transistor operates in the saturation region is expressed by Ids = (1/2) · μ · (W / L) · Cox · (Vgs−Vth) ^2. . Here, μ represents mobility, W represents gate width, L represents gate length, and Cox represents gate oxide film capacitance per unit area. As is clear from this transistor characteristic equation, when the threshold voltage Vth varies, the drain-source current Ids varies even if Vgs is constant. Here, in the pixel according to the present invention, the gate-source voltage Vgs at the time of light emission is expressed by Vin + Vth−ΔV as described above. Therefore, when this is substituted into the above transistor characteristic equation, the drain-source current Ids is Ids = (1/2) · μ · (W / L) · Cox · (Vin−ΔV) ² , and does not depend on the threshold voltage Vth. As a result, even if the threshold voltage Vth varies depending on the manufacturing process, the drain-source current Ids does not vary, and the light emission luminance of the organic EL device does not vary.

  If no measures are taken, the drive current corresponding to Vgs becomes Ids when the threshold voltage is Vth as shown in FIG. 5, whereas the drive current Ids ′ corresponding to the same gate voltage Vgs when the threshold voltage is Vth ′. Is different from Ids.

  FIG. 6A is a graph showing the current-voltage characteristics of the driving transistor. Characteristic curves are given for two driving transistors having different mobility in μ and μ ′. As is apparent from the graph, when the mobility is different between μ and μ ′, the drain-source current becomes Ids and Ids ′ and fluctuates even if Vgs is constant.

FIG. 6B illustrates the operation of the pixel at the time of sampling the video signal potential and correcting the mobility, and also shows the parasitic capacitance 3I of the light emitting element 3D for easy understanding. At the time of sampling the video signal potential, the sampling transistor 3A is in an on state, so that the gate potential Vg of the driving transistor 3B becomes the video signal potential Vin, and the gate-source voltage Vgs of the driving transistor 3B becomes Vin + Vth. At this time, the driving transistor 3B is turned on, and the light emitting element 3D is cut off, so that the drain-source current Ids flows into the light emitting element capacitor 3I. When the drain-source current Ids flows into the light emitting element capacitor 3I, the light emitting element capacitor 3I starts to be charged, and the anode of the light emitting element 3D (therefore, the source potential Vs of the driving transistor 3B) starts to rise. When the source potential Vs of the driving transistor 3B increases by ΔV, the gate-source voltage Vgs of the driving transistor 3B decreases by ΔV. This is a mobility correction operation by negative feedback, and the decrease amount ΔV of the gate-source voltage Vgs is determined by ΔV = Ids · t / Cel , and ΔV is a parameter for mobility correction. Here, Cel represents the capacitance value of the light emitting element capacitance 3I, and t represents a mobility correction period (a period between the first timing and the second timing).

  FIG. 6C is a schematic diagram illustrating the operation timing of the pixel circuit that determines the mobility correction period t. In the example shown in the drawing, the mobility correction period t automatically follows the video line signal potential by providing a slope to the rising edge of the video line signal potential, thereby optimizing it. As shown in the figure, the mobility correction period t is determined by the phase difference between the scanning line WS101 and the video signal line DTL101, and is further determined by the potential of the video signal line DTL101. The mobility correction parameter ΔV is ΔV = Ids · Cel / t. As is apparent from this equation, the mobility correction parameter ΔV increases as the drain-source current Ids of the driving transistor 3B increases. Conversely, when the drain-source current Ids of the driving transistor 3B is small, the mobility correction parameter ΔV is small. Thus, the mobility correction parameter ΔV is determined according to the drain-source current Ids. At this time, the mobility correction period t does not necessarily have to be constant, and conversely, it may be preferable to adjust according to Ids. For example, when Ids is large, the mobility correction period t should be short, and conversely, when Ids is small, the mobility correction period t should be set long. Therefore, in the embodiment shown in FIG. 6C, the correction period t is shortened when the potential of the video signal line DTL101 is high (when Ids is large) by tilting at least the rise of the video signal line potential, and the video signal line When the potential of the DTL 101 is low (when Ids is small), the correction period t is automatically adjusted to be long.

  FIG. 6D is a graph for explaining an operating point of the driving transistor 3B at the time of mobility correction. The optimum correction parameters ΔV and ΔV ′ are determined by performing the above-described mobility correction for the variations in the mobility μ and μ ′ in the manufacturing process, and the drain-source currents Ids and Ids ′ of the driving transistor 3B are determined. Is determined. If the mobility correction is not applied, if the mobility differs between μ and μ ′ with respect to the gate-source voltage Vgs, the drain-source current also differs depending on this between Ids0 and Ids0 ′. In order to cope with this, by applying appropriate corrections ΔV and ΔV ′ to the mobility μ and μ ′, respectively, the drain-source current becomes Ids and Ids ′, which are at the same level. As is apparent from the graph of FIG. 6D, negative feedback is applied so that the correction amount ΔV increases when the mobility μ is high, while the correction amount ΔV ′ also decreases when the mobility μ ′ is small.

  FIG. 7A is a graph showing current-voltage characteristics of a light-emitting element 3D composed of an organic EL device. When the current Iel flows through the light emitting element 3D, the anode-cathode voltage Vel is uniquely determined. As shown in FIG. 4G, when the scanning line WSL101 transits to the low potential side during the light emission period and the sampling transistor 3A is turned off, the anode of the light emitting element 3D is determined by the drain-source current Ids of the driving transistor 3B. The anode-cathode voltage Vel increases.

  FIG. 7B is a graph showing potential fluctuations of the gate potential Vg and the source potential Vs of the driving transistor 3B when the anode potential of the light emitting element 3D is increased. When the anode rising voltage of the light emitting element 3D is Vel, the source of the driving transistor 3B is also raised by Vel, and the gate of the driving transistor 3B is also raised by Vel by the bootstrap operation of the storage capacitor 3C. For this reason, the gate-source voltage Vgs = Vin + Vth−ΔV of the driving transistor 3B held before the bootstrap is held as it is after the bootstrap. Even if the anode potential fluctuates due to deterioration with time of the light emitting element 3D, the gate-source voltage of the driving transistor 3B is always kept constant at Vin + Vth−ΔV.

  FIG. 7C is a circuit diagram in which parasitic capacitances 7A and 7B are added to the pixel configuration of the present invention described in FIG. 3B. The parasitic capacitances 7A and 7B are parasitic on the gate g of the driving transistor 3. The bootstrap operation capability described above is expressed as Cs / (Cs + Cw + Cp) when the capacitance value of the storage capacitor is Cs and the capacitance values of the parasitic capacitors 7A and 7B are Cw and Cp, respectively. High ability. That is, the light-emitting element 3D has a high correction capability for deterioration with time. In the present invention, the number of elements connected to the gate g of the driving transistor 3B is minimized, and Cp can be almost ignored. Therefore, the bootstrap operation capability is represented by Cs / (Cs + Cw), which is as close to 1 as possible, indicating that the correction capability against the deterioration with time of the light emitting element 3D is high.

  FIG. 8 is a schematic circuit diagram showing another embodiment of the display device according to the present invention. For ease of understanding, parts corresponding to those of the previous embodiment shown in FIG. 3B are given corresponding reference numerals. The difference is that the embodiment shown in FIG. 3B uses an N-channel transistor to form a pixel circuit, whereas the embodiment shown in FIG. 8 uses a P-channel transistor to form a pixel circuit. It is that. The pixel circuit in FIG. 8 can perform the threshold voltage correction operation, the mobility correction operation, and the bootstrap operation in exactly the same manner as the pixel circuit shown in FIG. 3B.

It is a circuit diagram which shows a general pixel structure. 2 is a timing chart for explaining the operation of the pixel circuit shown in FIG. 1. 1 is a block diagram showing an overall configuration of a display device according to the present invention. It is a circuit diagram which shows embodiment of the display apparatus concerning this invention. It is a timing chart with which it uses for operation | movement description of embodiment shown to FIG. 3B. It is a circuit diagram similarly used for operation | movement description. It is a circuit diagram similarly provided for operation | movement description. It is a circuit diagram similarly used for operation | movement description. It is a circuit diagram similarly used for operation | movement description. It is a circuit diagram similarly used for operation | movement description. It is a circuit diagram similarly used for operation | movement description. It is a graph which shows the current-voltage characteristic of a driving transistor. It is a graph which similarly shows the current-voltage characteristic of a driving transistor. It is a circuit diagram with which it uses for operation | movement description of the display apparatus concerning this invention. It is a wave form diagram similarly provided for operation | movement description. It is a current-voltage characteristic graph similarly used for operation explanation. It is a graph which shows the current-voltage characteristic of a light emitting element. It is a wave form diagram which shows the bootstrap operation | movement of the transistor for a drive. It is a circuit diagram with which it uses for operation | movement description of the display apparatus concerning this invention. It is a circuit diagram which shows other embodiment of the display apparatus concerning this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 ... Display apparatus, 101 ... Pixel, 102 ... Pixel array part, 103 ... Horizontal selector, 104 ... Write scanner, 105 ... Power supply scanner, 3A ... Sampling transistor, 3B ... Drive transistor, 3C ... Retention capacity, 3D ... Light emission element

Claims (10)

Including a light emitting element, a sampling transistor, a driving transistor, and a storage capacitor;
The gate of the sampling transistor is connected to the scanning line, one of the source and the drain is connected to the signal line, the other is connected to the gate of the driving transistor,
The source of the driving transistor is connected to the light emitting element, and the drain is connected to a power supply line that switches between a first potential and a second potential that is lower than the first potential .
The storage capacitor is connected between the source and gate of the driving transistor,
The driving transistor, in response to the signal potential held in the storage capacitor, a to the pixel circuit flow a driving current to the light emitting element,
When a reference potential that is lower than the first potential and higher than the second potential is supplied to the signal line, and the potential of the power supply line is the first potential, the sampling transistor is turned on to drive the signal. The gate potential of the transistor is set to the reference potential, the potential of the power supply line is then switched from the first potential to the second potential, the source of the driving transistor is set to the second potential, and then the potential of the power supply line is set to the second potential. The potential of the source of the driving transistor is increased by switching from the potential to the first potential, and after the gate-source voltage of the driving transistor becomes the threshold voltage of the driving transistor, the potential supplied to the signal line is A pixel circuit that can be switched from a reference potential to a signal potential . Potential of the power supply line is switched from the first potential to the second potential, wherein the source of the driving transistor is a second potential, than Te, the potential difference across the storage capacitor is greater than the threshold voltage of the driving transistor Item 2. The pixel circuit according to Item 1. The potential of the power supply line is switched from the second potential to the first potential, and the potential of the source of the driving transistor is raised, so that the potential of the other end of the storage capacitor is changed toward the potential of one end of the storage capacitor. The pixel circuit according to claim 1.   2. The pixel circuit according to claim 1, wherein the scanning lines are line-sequentially scanned, the power supply lines are also scanned in accordance with the line-sequential scanning of the scanning lines, and the potential of the power supply lines is sequentially switched from the second potential to the first potential. Including a light emitting element, a sampling transistor, a driving transistor, and a storage capacitor;
The gate of the sampling transistor is connected to the scanning line, one of the source and the drain is connected to the signal line, the other is connected to the gate of the driving transistor,
The source of the driving transistor is connected to the light emitting element, and the drain is connected to a power supply line that switches between a first potential and a second potential that is lower than the first potential .
The storage capacitor is connected between the source and gate of the driving transistor,
The driving transistor, in response to the signal potential held in the storage capacitor, a driving method to the pixel circuit flow a driving current to the light emitting element,
When a reference potential that is lower than the first potential and higher than the second potential is supplied to the signal line and the potential of the power supply line is the first potential, the sampling transistor is turned on to drive The gate potential of the transistor is set as a reference potential, the potential of the power supply line is then switched from the first potential to the second potential, the source of the driving transistor is set as the second potential, and then the potential of the power supply line is changed from the second potential to the second potential. The potential of the source of the driving transistor is increased by switching to one potential, and after the gate-source voltage of the driving transistor becomes the threshold voltage of the driving transistor, the potential supplied to the signal line is signaled from the reference potential. A driving method of a pixel circuit to be switched to a potential . It consists of a pixel array part and a drive part that drives it,
The pixel array unit includes a row-shaped scanning line, a column-shaped signal line, and pixels arranged at a portion where both intersect,
The pixel includes a light emitting element, a sampling transistor, a driving transistor, and a storage capacitor.
The gate of the sampling transistor is connected to the scanning line, one of the source and the drain is connected to the signal line, the other is connected to the gate of the driving transistor,
The source of the driving transistor is connected to the light emitting element, the drain is connected to the power supply line,
The storage capacitor is connected between the source and gate of the driving transistor,
Drive unit includes a video signal supply circuit for supplying a reference potential and the signal potential, to the power supply line, a first potential and a power supply scanner for supplying a second potential lower potential than the first potential,
The driving transistor is supplied with current from the power line, in accordance with the signal potential held in the storage capacitor, a to display the flow a drive current to the light emitting element,
When a reference potential that is lower than the first potential and higher than the second potential is supplied to the signal line, and the potential of the power supply line is the first potential, the sampling transistor is turned on to drive the signal. The gate potential of the transistor is set to the reference potential, the potential of the power supply line is then switched from the first potential to the second potential, the source of the driving transistor is set to the second potential, and then the potential of the power supply line is set to the second potential. The potential of the source of the driving transistor is increased by switching from the potential to the first potential, and after the gate-source voltage of the driving transistor becomes the threshold voltage of the driving transistor, the potential supplied to the signal line is A display device that can be switched from a reference potential to a signal potential . Potential of the power supply line is switched from the first potential to the second potential, wherein the source of the driving transistor is a second potential, than Te, the potential difference across the storage capacitor is greater than the threshold voltage of the driving transistor Item 7. The display device according to Item 6 . The potential of the power supply line is switched from the second potential to the first potential, and the potential of the source of the driving transistor is raised, so that the potential of the other end of the storage capacitor is changed toward the potential of one end of the storage capacitor. The display device according to claim 6. The display device according to claim 6 , wherein the power supply scanner scans each power supply line sequentially and sequentially switches the potential of each power supply line from the second potential to the first potential. It consists of a pixel array part and a drive part that drives it,
The pixel array unit includes a row-shaped scanning line, a column-shaped signal line, and pixels arranged at a portion where both intersect,
The pixel includes a light emitting element, a sampling transistor, a driving transistor, and a storage capacitor.
The gate of the sampling transistor is connected to the scanning line, one of the source and the drain is connected to the signal line, the other is connected to the gate of the driving transistor,
The source of the driving transistor is connected to the light emitting element, the drain is connected to the power supply line,
The storage capacitor is connected between the source and gate of the driving transistor,
Drive unit includes a video signal supply circuit for supplying a reference potential and the signal potential, to the power supply line, a first potential and a power supply scanner for supplying a second potential lower potential than the first potential,
The driving transistor is supplied with current from the power line, in accordance with the signal potential held in the storage capacitor, a driving method of a to display the flow a drive current to the light emitting element,
When a reference potential that is lower than the first potential and higher than the second potential is supplied to the signal line and the potential of the power supply line is the first potential, the sampling transistor is turned on to drive The gate potential of the transistor is set as a reference potential, the potential of the power supply line is then switched from the first potential to the second potential, the source of the driving transistor is set as the second potential, and then the potential of the power supply line is changed from the second potential to the second potential. The potential of the source of the driving transistor is increased by switching to one potential, and after the gate-source voltage of the driving transistor becomes the threshold voltage of the driving transistor, the potential supplied to the signal line is signaled from the reference potential. A display device driving method for switching to a potential .

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