JP4295648B2 - Image forming material - Google Patents
Image forming material Download PDFInfo
- Publication number
- JP4295648B2 JP4295648B2 JP2004075121A JP2004075121A JP4295648B2 JP 4295648 B2 JP4295648 B2 JP 4295648B2 JP 2004075121 A JP2004075121 A JP 2004075121A JP 2004075121 A JP2004075121 A JP 2004075121A JP 4295648 B2 JP4295648 B2 JP 4295648B2
- Authority
- JP
- Japan
- Prior art keywords
- acid
- group
- image forming
- phenol
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 title claims description 46
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 129
- -1 sulfonic acid compound Chemical class 0.000 claims description 87
- 229920003986 novolac Polymers 0.000 claims description 62
- 125000004432 carbon atom Chemical group C* 0.000 claims description 32
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 31
- 125000001424 substituent group Chemical group 0.000 claims description 29
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 125000000217 alkyl group Chemical group 0.000 claims description 21
- 125000005843 halogen group Chemical group 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 14
- 239000005011 phenolic resin Substances 0.000 claims description 7
- 125000004104 aryloxy group Chemical group 0.000 claims description 3
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- 239000010410 layer Substances 0.000 description 95
- 229920005989 resin Polymers 0.000 description 88
- 239000011347 resin Substances 0.000 description 88
- 239000002253 acid Substances 0.000 description 86
- 239000000975 dye Substances 0.000 description 72
- 238000007639 printing Methods 0.000 description 65
- 238000000034 method Methods 0.000 description 47
- 238000000576 coating method Methods 0.000 description 45
- 229910052782 aluminium Inorganic materials 0.000 description 44
- 239000011248 coating agent Substances 0.000 description 44
- 239000000049 pigment Substances 0.000 description 44
- 238000011282 treatment Methods 0.000 description 42
- 239000000243 solution Substances 0.000 description 38
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 35
- 239000002243 precursor Substances 0.000 description 34
- 238000011161 development Methods 0.000 description 33
- 230000000052 comparative effect Effects 0.000 description 32
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 32
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 30
- 150000001875 compounds Chemical class 0.000 description 29
- 239000000203 mixture Substances 0.000 description 29
- 230000035945 sensitivity Effects 0.000 description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 26
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 24
- 239000000126 substance Substances 0.000 description 24
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 21
- 150000002989 phenols Chemical class 0.000 description 19
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 18
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 18
- 239000003513 alkali Substances 0.000 description 17
- 229920000642 polymer Polymers 0.000 description 17
- 238000007788 roughening Methods 0.000 description 17
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 16
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 15
- 239000007787 solid Substances 0.000 description 15
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 14
- 239000007864 aqueous solution Substances 0.000 description 14
- 239000007788 liquid Substances 0.000 description 14
- 125000003118 aryl group Chemical group 0.000 description 13
- 238000012545 processing Methods 0.000 description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- 238000004090 dissolution Methods 0.000 description 12
- 238000001035 drying Methods 0.000 description 12
- 238000006068 polycondensation reaction Methods 0.000 description 12
- 239000000047 product Substances 0.000 description 12
- 150000003839 salts Chemical class 0.000 description 12
- 239000004094 surface-active agent Substances 0.000 description 12
- 238000005406 washing Methods 0.000 description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 11
- 229920001577 copolymer Polymers 0.000 description 11
- 150000002430 hydrocarbons Chemical group 0.000 description 11
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 150000001450 anions Chemical class 0.000 description 10
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 10
- 239000003921 oil Substances 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 235000020681 well water Nutrition 0.000 description 9
- 239000002349 well water Substances 0.000 description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 150000001299 aldehydes Chemical class 0.000 description 8
- 125000003545 alkoxy group Chemical group 0.000 description 8
- 150000001735 carboxylic acids Chemical class 0.000 description 8
- 238000009833 condensation Methods 0.000 description 8
- 230000005494 condensation Effects 0.000 description 8
- 239000003792 electrolyte Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910017604 nitric acid Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- ZRYCRPNCXLQHPN-UHFFFAOYSA-N 3-hydroxy-2-methylbenzaldehyde Chemical compound CC1=C(O)C=CC=C1C=O ZRYCRPNCXLQHPN-UHFFFAOYSA-N 0.000 description 7
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 230000003993 interaction Effects 0.000 description 7
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 229910052700 potassium Inorganic materials 0.000 description 7
- 239000011591 potassium Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 238000005507 spraying Methods 0.000 description 7
- NKTOLZVEWDHZMU-UHFFFAOYSA-N 2,5-xylenol Chemical compound CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 6
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 6
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 239000000178 monomer Substances 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 6
- 125000004434 sulfur atom Chemical group 0.000 description 6
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 5
- 239000005711 Benzoic acid Substances 0.000 description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000004115 Sodium Silicate Substances 0.000 description 5
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 5
- 235000010233 benzoic acid Nutrition 0.000 description 5
- 230000005591 charge neutralization Effects 0.000 description 5
- 229930003836 cresol Natural products 0.000 description 5
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- JVICFMRAVNKDOE-UHFFFAOYSA-M ethyl violet Chemical compound [Cl-].C1=CC(N(CC)CC)=CC=C1C(C=1C=CC(=CC=1)N(CC)CC)=C1C=CC(=[N+](CC)CC)C=C1 JVICFMRAVNKDOE-UHFFFAOYSA-M 0.000 description 5
- 239000003112 inhibitor Substances 0.000 description 5
- 230000002401 inhibitory effect Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 5
- 229910052911 sodium silicate Inorganic materials 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 4
- UYEMGAFJOZZIFP-UHFFFAOYSA-N 3,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC(O)=C1 UYEMGAFJOZZIFP-UHFFFAOYSA-N 0.000 description 4
- XMIIGOLPHOKFCH-UHFFFAOYSA-N 3-phenylpropionic acid Chemical compound OC(=O)CCC1=CC=CC=C1 XMIIGOLPHOKFCH-UHFFFAOYSA-N 0.000 description 4
- SCOSSUFXFMVRJQ-UHFFFAOYSA-N 6-hydroxynaphthalene-1-sulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC2=CC(O)=CC=C21 SCOSSUFXFMVRJQ-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 4
- 239000004677 Nylon Substances 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 125000003277 amino group Chemical group 0.000 description 4
- 150000003868 ammonium compounds Chemical class 0.000 description 4
- 238000007743 anodising Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 239000012954 diazonium Substances 0.000 description 4
- 150000001989 diazonium salts Chemical class 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920001778 nylon Polymers 0.000 description 4
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- WVIICGIFSIBFOG-UHFFFAOYSA-N pyrylium Chemical class C1=CC=[O+]C=C1 WVIICGIFSIBFOG-UHFFFAOYSA-N 0.000 description 4
- 235000011121 sodium hydroxide Nutrition 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- ZDPHROOEEOARMN-UHFFFAOYSA-N undecanoic acid Chemical compound CCCCCCCCCCC(O)=O ZDPHROOEEOARMN-UHFFFAOYSA-N 0.000 description 4
- 150000003739 xylenols Chemical class 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- KMOUUZVZFBCRAM-UHFFFAOYSA-N 1,2,3,6-tetrahydrophthalic anhydride Chemical compound C1C=CCC2C(=O)OC(=O)C21 KMOUUZVZFBCRAM-UHFFFAOYSA-N 0.000 description 3
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 3
- LBNDGEZENJUBCO-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethyl]butanedioic acid Chemical compound CC(=C)C(=O)OCCC(C(O)=O)CC(O)=O LBNDGEZENJUBCO-UHFFFAOYSA-N 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 3
- NQRAOOGLFRBSHM-UHFFFAOYSA-N 2-methyl-n-(4-sulfamoylphenyl)prop-2-enamide Chemical compound CC(=C)C(=O)NC1=CC=C(S(N)(=O)=O)C=C1 NQRAOOGLFRBSHM-UHFFFAOYSA-N 0.000 description 3
- YQUVCSBJEUQKSH-UHFFFAOYSA-N 3,4-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C(O)=C1 YQUVCSBJEUQKSH-UHFFFAOYSA-N 0.000 description 3
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- WWZKQHOCKIZLMA-UHFFFAOYSA-N Caprylic acid Natural products CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 235000011054 acetic acid Nutrition 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 3
- 125000000304 alkynyl group Chemical group 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- 239000002280 amphoteric surfactant Substances 0.000 description 3
- 239000000987 azo dye Substances 0.000 description 3
- QDHFHIQKOVNCNC-UHFFFAOYSA-N butane-1-sulfonic acid Chemical compound CCCCS(O)(=O)=O QDHFHIQKOVNCNC-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 125000004093 cyano group Chemical group *C#N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 229920002521 macromolecule Polymers 0.000 description 3
- 125000001624 naphthyl group Chemical group 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002736 nonionic surfactant Substances 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 125000000475 sulfinyl group Chemical group [*:2]S([*:1])=O 0.000 description 3
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 3
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 3
- 125000004149 thio group Chemical group *S* 0.000 description 3
- QQVDJLLNRSOCEL-UHFFFAOYSA-N (2-aminoethyl)phosphonic acid Chemical compound [NH3+]CCP(O)([O-])=O QQVDJLLNRSOCEL-UHFFFAOYSA-N 0.000 description 2
- VTESCYNPUGSWKG-UHFFFAOYSA-N (4-tert-butylphenyl)hydrazine;hydrochloride Chemical compound [Cl-].CC(C)(C)C1=CC=C(N[NH3+])C=C1 VTESCYNPUGSWKG-UHFFFAOYSA-N 0.000 description 2
- TUMAQTJFCCVBGU-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-pentacosaiodododecane-1-sulfonic acid Chemical compound OS(=O)(=O)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)I TUMAQTJFCCVBGU-UHFFFAOYSA-N 0.000 description 2
- CMCBDXRRFKYBDG-UHFFFAOYSA-N 1-dodecoxydodecane Chemical compound CCCCCCCCCCCCOCCCCCCCCCCCC CMCBDXRRFKYBDG-UHFFFAOYSA-N 0.000 description 2
- VATGOBMQDYYYFS-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-tricosaiodododecanoic acid Chemical compound OC(=O)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)I VATGOBMQDYYYFS-UHFFFAOYSA-N 0.000 description 2
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- HWIFKFNXXCIJQD-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,15,15,16,16,16-hentriacontaiodohexadecanoic acid Chemical compound OC(=O)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)I HWIFKFNXXCIJQD-UHFFFAOYSA-N 0.000 description 1
- KMXKGTPDTCHMOE-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,15,15,16,16,17,17,17-tritriacontachloroheptadecanoic acid Chemical compound OC(=O)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)Cl KMXKGTPDTCHMOE-UHFFFAOYSA-N 0.000 description 1
- ZAWWKRYRIHWWDN-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,15,15,16,16,17,17,17-tritriacontafluoroheptadecanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ZAWWKRYRIHWWDN-UHFFFAOYSA-N 0.000 description 1
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- DUODSEICBMUETR-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,15,15,16,16,17,17,18,18,19,19,19-heptatriacontachlorononadecanoic acid Chemical compound OC(=O)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)Cl DUODSEICBMUETR-UHFFFAOYSA-N 0.000 description 1
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- PFGOODDCNBRLNB-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,15,15,16,16,17,17,18,18,19,19,20,20,20-nonatriacontachloroicosanoic acid Chemical compound OC(=O)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)Cl PFGOODDCNBRLNB-UHFFFAOYSA-N 0.000 description 1
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- YTGHFJQWCSJECR-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,15,15,16,16,17,17,18,18,19,19,20,20,21,21,21-hentetracontaiodohenicosanoic acid Chemical compound OC(=O)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)I YTGHFJQWCSJECR-UHFFFAOYSA-N 0.000 description 1
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- QIQSUTNJLJIRQN-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,15,15,16,16,17,17,18,18,19,19,20,20,21,21,22,22,22-tritetracontachlorodocosanoic acid Chemical compound OC(=O)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)Cl QIQSUTNJLJIRQN-UHFFFAOYSA-N 0.000 description 1
- LBNMRSDCSDGPPN-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,15,15,16,16,17,17,18,18,19,19,20,20,21,21,22,22,22-tritetracontafluorodocosanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F LBNMRSDCSDGPPN-UHFFFAOYSA-N 0.000 description 1
- RUAUXPFLKGAEIS-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,15,15,16,16,17,17,18,18,19,19,20,20,21,21,22,22,22-tritetracontaiododocosanoic acid Chemical compound OC(=O)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)I RUAUXPFLKGAEIS-UHFFFAOYSA-N 0.000 description 1
- INIAQPSCJANDMV-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,15,15,16,16,17,17,18,18,19,19,20,20,21,21,22,22,23,23,23-pentatetracontabromotricosanoic acid Chemical compound OC(=O)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)Br INIAQPSCJANDMV-UHFFFAOYSA-N 0.000 description 1
- BLXLOPWHRAVAKO-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,15,15,16,16,17,17,18,18,19,19,20,20,21,21,22,22,23,23,23-pentatetracontachlorotricosanoic acid Chemical compound OC(=O)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)Cl BLXLOPWHRAVAKO-UHFFFAOYSA-N 0.000 description 1
- XTHBMASHWPDSDO-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,15,15,16,16,17,17,18,18,19,19,20,20,21,21,22,22,23,23,23-pentatetracontaiodotricosanoic acid Chemical compound OC(=O)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)C(I)(I)I XTHBMASHWPDSDO-UHFFFAOYSA-N 0.000 description 1
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- DRGDIBMMSQHQFA-UHFFFAOYSA-N 2,3,3,3-tetrabromo-2-(tribromomethyl)propanoic acid Chemical compound OC(=O)C(Br)(C(Br)(Br)Br)C(Br)(Br)Br DRGDIBMMSQHQFA-UHFFFAOYSA-N 0.000 description 1
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- VYVGSWLFIRSKAE-UHFFFAOYSA-N 2,3,4,5,6,7,8,9,10-nonabromoanthracene-1-carboxylic acid Chemical compound BrC1=C(Br)C(Br)=C2C(Br)=C3C(C(=O)O)=C(Br)C(Br)=C(Br)C3=C(Br)C2=C1Br VYVGSWLFIRSKAE-UHFFFAOYSA-N 0.000 description 1
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- VFUSGLXIDUPVBZ-UHFFFAOYSA-N 2,3,4,5,6,7,8-heptafluoronaphthalene-1-carboxylic acid Chemical compound FC1=C(F)C(F)=C2C(C(=O)O)=C(F)C(F)=C(F)C2=C1F VFUSGLXIDUPVBZ-UHFFFAOYSA-N 0.000 description 1
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- ZMOIAEHZILNVCK-UHFFFAOYSA-N 2,3,4,5,6-pentabromobenzenesulfonic acid Chemical compound OS(=O)(=O)C1=C(Br)C(Br)=C(Br)C(Br)=C1Br ZMOIAEHZILNVCK-UHFFFAOYSA-N 0.000 description 1
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Description
本発明は画像形成材料に関わり、より詳細には、コンピュータ等のディジタル信号から直接製版できる、所謂ダイレクト製版用の赤外線レーザ用ポジ型平版印刷版原版として有用なポジ型画像形成材料に関する。 The present invention relates to an image forming material, and more particularly to a positive image forming material useful as a positive lithographic printing plate precursor for infrared laser for direct plate making, which can be directly made from a digital signal of a computer or the like.
近年におけるレーザの発展は目ざましく、特に近赤外から赤外に発光領域を持つ固体レーザ・半導体レーザは高出力かつ小型の物が容易に入手できるようになっている。コンピュータ等のディジタルデータから直接製版する際の露光光源として、これらのレーザは非常に有用である。 In recent years, the development of lasers has been remarkable, and in particular, solid-state lasers and semiconductor lasers having a light emitting region from the near infrared to the infrared can easily obtain high-power and small-sized ones. These lasers are very useful as an exposure light source when directly making a plate from digital data such as a computer.
従来公知のダイレクト製版用の赤外線レーザ用ポジ型感光性画像形成材料においては、アルカリ水溶液可溶性樹脂として主としてノボラック樹脂等が用いられている。
例えば、ポジ型感光性画像形成材料として、ノボラック樹脂等のフェノール性水酸基を有するアルカリ水溶液可溶性樹脂に、光を吸収して熱を発生する物質と、種々のオニウム塩、キノンジアジド化合物類等のようなポジ型感光性化合物を添加したものであって、該ポジ型感光性化合物が、画像部ではアルカリ水溶液可溶性樹脂の溶解性を実質的に低下させる溶解阻止剤として働き、非画像部では熱により溶解阻止能を発現しなくなり、現像により除去され得るようになって、画像が形成されるものが開示されている(例えば、特許文献1参照。)。
In a conventionally known positive photosensitive image forming material for infrared laser for direct plate making, a novolak resin or the like is mainly used as an aqueous alkali solution-soluble resin.
For example, as a positive-type photosensitive image forming material, an alkali aqueous solution-soluble resin having a phenolic hydroxyl group such as a novolak resin, a substance that absorbs light and generates heat, various onium salts, quinonediazide compounds, etc. A positive photosensitive compound is added, and the positive photosensitive compound acts as a dissolution inhibitor that substantially lowers the solubility of the aqueous alkali-soluble resin in the image area, and dissolves by heat in the non-image area. There has been disclosed a technique in which an image is formed such that the blocking ability is not developed and can be removed by development (see, for example, Patent Document 1).
また、ポジ型感光性画像形成材料としては、光を吸収して熱を発生する物質と、熱によりアルカリ水溶液溶解性が変化する樹脂とからなるものであって、画像部ではアルカリ水溶液溶解性が低く、非画像部では熱によりアルカリ水溶液可溶性が高くなり、現像により除去され得るようになって画像が形成されるものが開示されている(特許文献2及び3参照。)。 Further, the positive photosensitive image forming material is composed of a substance that generates heat by absorbing light and a resin whose alkali aqueous solution solubility is changed by the heat. Low and non-image areas are disclosed in which an aqueous alkali solution becomes highly soluble by heat and can be removed by development to form an image (see Patent Documents 2 and 3).
従来の平版印刷用原版において、ノボラック樹脂は、溶解抑制剤と強く相互作用するため、露光部と非露光部とで現像液に対する溶解性の差が大きくなること、インキ受容性に優れること等の理由から、特に好ましく用いられている。そして、赤外線レーザ用ポジ型感光性画像形成材料についても、同様の理由からノボラック樹脂が用いられている。該ノボラック樹脂としては、特にフェノール、クレゾール、キシレノール等のフェノール類を、酸性条件下においてホルムアルデヒドを用いて重合したものが一般的である。 In the conventional lithographic printing plate precursor, the novolak resin interacts strongly with the dissolution inhibitor, so that the difference in solubility in the developer between the exposed area and the unexposed area becomes large, and the ink acceptability is excellent. For reasons, it is particularly preferably used. For the same reason, novolak resin is also used for positive-type photosensitive image forming materials for infrared lasers. As the novolak resin, a resin obtained by polymerizing phenols such as phenol, cresol and xylenol using formaldehyde under acidic conditions is generally used.
溶解抑制剤としては多岐に渡る化合物が検討されているが、とりわけオニウム塩型の溶解抑制剤が非常に強い溶解抑制能を示すことが知られている。しかし、一般的なオニウム塩化合物の添加では、高い溶解抑制能による未露光部の耐アルカリ性向上効果は得られるが、例えば、白灯下での取り扱いにより感度の低下を招くなどの問題であった。この問題を克服する手段として、露光による分解性に優れた特定のオニウム塩を用いる新たな感光材料が開示されている(例えば、下記特許文献4参照)。このようなオニウム塩は、高い溶解抑制能と高感度を両立する優れた特性を示すものの、露光後、直ちに現像処理を行わず、露光した版材を所定時間経た後に現像するような場合、経時により現像性が低下するという新たな問題を生ずることが分かってきた。このような露光後の経時による現像性の低下は、製版工程において問題であり、改善が求められている。以下、本明細書では、露光後の現像性変動の程度を「焼きだめ性」の良否で表し、現像性の低下が大きいものほど「焼きだめ性が悪い」と称する。
前記従来技術の問題点を考慮してなされた本発明の目的は、ヒートモード対応ポジ型平版印刷版原版に有用であり、露光部と非露光部との現像液に対する溶解性の差(溶解性ディスクリミネーション:以下、適宜「溶解性ディスクリ」と称する。)に優れ、且つ、露光後の経時による現像性変化の度合いが小さい、即ち、焼きだめ性が良好なポジ型画像形成材料を提供することにある。 The object of the present invention made in consideration of the problems of the prior art is useful for a heat mode-compatible positive planographic printing plate precursor, and a difference in solubility in a developing solution between an exposed area and an unexposed area (solubility) Discrimination: hereinafter referred to as “dissolvable discrimination” as appropriate) and providing a positive type image-forming material having a small degree of change in developability with time after exposure, that is, good shrinkage. There is to do.
本発明者等は、検討の結果、構造単位としてフェノールを含むノボラック型フェノール樹脂とスルホニウム塩とを併用して画像形成層に適用することにより、感度及び現像ラチチュードを低下させることなく、焼きだめ性を大きく改善可能であることを見出し、本発明を完成するに至った。 As a result of the study, the inventors of the present invention have applied a novolac type phenol resin containing phenol as a structural unit and a sulfonium salt to the image forming layer in combination, thereby reducing the shrinkage without reducing the sensitivity and the development latitude. As a result, the present invention has been completed.
即ち、本発明の画像形成材料は、支持体上に、(A)構造単位としてフェノールを含むノボラック型フェノール樹脂(以下、適宜「特定ノボラック樹脂」と称する。)、(B)光熱変換剤、及び(C)以下に詳述する一般式(II)で表されるスルホニウム塩、を含有する画像形成層を有することを特徴とする。 That is, the image forming material of the present invention comprises (A) a novolak type phenol resin containing phenol as a structural unit (hereinafter, referred to as “specific novolak resin” as appropriate), (B) a photothermal conversion agent, and (C) It has an image forming layer containing a sulfonium salt represented by the general formula (II) described in detail below .
一般に、現像ラチチュードを犠牲にすれば焼きだめ性を向上することができる。しかしながら、驚くべきことに、本発明においては、上記構成としたことにより、感度と現像ラチチュードとを両立した上で、焼きだめ性をも向上させることが可能となったのである。
本発明の作用は明確ではないが、画像形成層に特定の置換基を有するスルホニウム塩を添加することにより、画像形成層の被膜形成成分である特定ノボラック樹脂、特にその構造単位であるフェノールとの相互作用により、画像部の現像液に対する耐性が強化され、より活性の高い現像液に対して画像部が損傷を受け難くなり、耐現像性に優れた画像部が形成される。この特定の置換基を有するスルホニウム塩は熱分解性に優れ、且つ、その分解反応は非可逆的であるため、赤外線レーザ露光領域では、スルホニウム塩に起因する耐現像性が分解により速やかに消失して、現像性が向上し、優れた溶解性ディスクリが達成されるものと考えられる。
一方、一般にポジ型画像形成層の露光部において、経時にともなって起こる現像性の低下は、ノボラック樹脂と溶解抑制剤との相互作用が露光により消失した後、経時によりその相互作用が再形成されることに起因するものと推定されるが、本発明においては、画像形成層中に添加されたスルホニウム塩が赤外線レーザ露光領域で速やかに分解し、特定の置換基を有するスルホニウム塩に起因する耐現像性が消失して露光部における現像性が向上するが、このスルホニウム塩分解による耐現像性機能の消失は非可逆的であるため、露光後の経時による現像性の低下も改善されるものと考えられる。
In general, if the development latitude is sacrificed, the printing quality can be improved. Surprisingly, however, in the present invention, by adopting the above-described configuration, it is possible to improve the shrinkage while achieving both sensitivity and development latitude.
Although the action of the present invention is not clear, by adding a sulfonium salt having a specific substituent to the image forming layer, it can be used with a specific novolak resin, particularly a phenol as its structural unit, as a film forming component of the image forming layer. The interaction enhances the resistance of the image portion to the developer, makes the image portion less susceptible to damage by a more active developer, and forms an image portion having excellent development resistance. Since the sulfonium salt having this specific substituent is excellent in thermal decomposability and its decomposition reaction is irreversible, the development resistance due to the sulfonium salt is quickly lost by decomposition in the infrared laser exposure region. Thus, it is considered that developability is improved and an excellent solubility disc is achieved.
On the other hand, in general, in the exposed portion of the positive type image forming layer, the decrease in developability with time is caused by the interaction between the novolak resin and the dissolution inhibitor disappearing by exposure, and then the interaction is re-formed with time. In the present invention, the sulfonium salt added to the image forming layer is rapidly decomposed in the infrared laser exposure region, and the anti-resistance attributed to the sulfonium salt having a specific substituent is used in the present invention. The developability disappears and the developability in the exposed area is improved, but the loss of developability function due to the decomposition of the sulfonium salt is irreversible, so that the decrease in developability with time after exposure is also improved. Conceivable.
なお、本発明において「ヒートモード対応」とは、ヒートモード露光による記録が可能であることを意味する。
本発明におけるヒートモード露光の定義について詳述する。Hans−Joachim Timpe,IS&Ts NIP 15:1999 International Conference on Digital Printing Technologies.p209に記載されているように、感光体材料において光吸収物質(例えば色素)を光励起させ、化学的或いは物理的変化を経て、画像を形成するその光吸収物質の光励起から化学的或いは物理的変化までのプロセスには大きく分けて二つのモードが存在することが知られている。1つは光励起された光吸収物質が感光材料中の他の反応物質と何らかの光化学的相互作用(例えば、エネルギー移動、電子移動)をすることで失活し、その結果として活性化した反応物質が上述の画像形成に必要な化学的或いは物理変化を引き起こすいわゆるフォトンモードであり、もう1つは光励起された光吸収物質が熱を発生し失活し、その熱を利用して反応物質が上述の画像形成に必要な化学的或いは物理変化を引き起こすいわゆるヒートモードである。その他、物質が局所的に集まった光のエネルギーにより爆発的に飛び散るアブレーションや1分子が多数の光子を一度に吸収する多光子吸収など特殊なモードもあるがここでは省略する。
In the present invention, “corresponding to heat mode” means that recording by heat mode exposure is possible.
The definition of the heat mode exposure in this invention is explained in full detail. Hans-Joachim Time, IS & Ts NIP 15: 1999 International Conference on Digital Printing Technologies. As described in p209, a photoabsorbing substance (for example, a dye) is photoexcited in a photosensitive material and undergoes a chemical or physical change to form a chemical or physical change from the photoexcitation of the photoabsorbing substance that forms an image. It is known that there are two modes in the above process. One is that the photo-excited light-absorbing substance is deactivated by some photochemical interaction (for example, energy transfer, electron transfer) with other reactants in the photosensitive material, and as a result, the activated reactant is The so-called photon mode that causes the chemical or physical change necessary for the above-described image formation, and the other is that the photo-excited light-absorbing material generates heat and deactivates, and the reaction material is converted into the above-described using the heat. This is a so-called heat mode that causes a chemical or physical change necessary for image formation. In addition, there are special modes such as ablation that explosively scatters by the energy of light gathered locally, and multiphoton absorption in which one molecule absorbs many photons at once, but they are omitted here.
上述の各モードを利用した露光プロセスをフォトンモード露光及びヒートモード露光と呼ぶ。フォトンモード露光とヒートモード露光の技術的な違いは、目的とする反応のエネルギー量に対し露光する数個の光子のエネルギー量を加算して使用できるかどうかである。例えば、n個の光子を用いて、ある反応を起こすことを考える。フォトンモード露光では光化学的相互作用を利用しているため、量子のエネルギー及び運動量保存則の要請により1光子のエネルギーを足し併せて使用することができない。つまり、何らかの反応を起こすためには「1光子のエネルギー量≧反応のエネルギー量」の関係が必要である。一方、ヒートモード露光では光励起後に熱を発生し、光エネルギーを熱に変換し利用するためエネルギー量の足し併せが可能となる。そのため、「n個の光子のエネルギー量≧反応のエネルギー量」の関係があれが充分となる。但し、このエネルギー量加算には熱拡散による制約を受ける。即ち、今注目している露光部分(反応点)から熱拡散により熱が逃げるまでに次の光励起−失活過程が起こり熱が発生すれば、熱は確実に蓄積加算し、その部分の温度上昇につながる。しかし、次の熱の発生が遅い場合には熱が逃げて蓄積されない。つまり、ヒートモード露光では同じ全露光エネルギー量であっても高エネルギー量の光を短い時間照射した場合と低エネルギー量の光を長い時間照射した場合とでは結果が異なり、短時間の方が熱の蓄積に有利になる。 The exposure process using each of the above modes is called photon mode exposure and heat mode exposure. The technical difference between photon mode exposure and heat mode exposure is whether or not the energy amount of several photons to be exposed can be added to the target energy amount of the reaction. For example, consider that a certain reaction is caused by using n photons. In photon mode exposure, photochemical interaction is used, so that one-photon energy cannot be added together due to the requirement of quantum energy and momentum conservation laws. That is, in order to cause some kind of reaction, a relationship of “one photon energy amount ≧ reaction energy amount” is necessary. On the other hand, in heat mode exposure, heat is generated after light excitation, and light energy is converted into heat and used, so that the amount of energy can be added. Therefore, the relationship “energy amount of n photons ≧ energy amount of reaction” is sufficient. However, this energy amount addition is restricted by thermal diffusion. That is, if the next photoexcitation-deactivation process occurs and the heat is generated before the heat escapes from the exposed portion (reaction point) of interest now, due to thermal diffusion, the heat is surely accumulated and added, and the temperature of that portion increases. Leads to. However, when the next heat generation is slow, the heat escapes and does not accumulate. In other words, in the heat mode exposure, even when the same total exposure energy amount is used, the result is different between the case where the high energy amount light is irradiated for a short time and the case where the low energy amount light is irradiated for a long time. It becomes advantageous for accumulation.
無論、フォトンモード露光では後続反応種の拡散の影響で似たような現象が起こる場合もあるが、基本的には、このようなことは起こらない。
即ち、感光材料の特性として見た場合、フォトンモードでは露光パワー密度(W/cm2)(=単位時間当たりのエネルギー密度)に対し感光材料の固有感度(画像形成に必要な反応のためのエネルギー量)は一定となるが、ヒートモードでは露光パワー密度に対し感光材料の固有感度が上昇することになる。従って、実際に画像記録材料として実用上、必要な生産性を維持できる程度の露光時間を固定すると、各モードを比較した場合、フォトンモード露光では通常は約0.1mJ/cm2程度の高感度化が達成できるものの、どのように少ない露光量でも反応が起こるため、未露光部での低露光カブリの問題が生じ易い。これに対し、ヒートモード露光では、ある一定以上の露光量でないと反応が起こらず、また、感光材料の熱安定性との関係から通常は50mJ/cm2程度が必要となるが、低露光カブリの問題が回避される。
そして、事実上ヒートモード露光では感光材料の版面での露光パワー密度が5000W/cm2以上であることが必要であり、好ましくは10000W/cm2以上が必要となる。但し、ここでは詳しく述べなかったが5.0×105W/cm2以上の高パワー密度レーザーを利用するとアブレーションが起こり、光源を汚す等の問題から好ましくない。
Of course, in the photon mode exposure, a similar phenomenon may occur due to the diffusion of the subsequent reactive species, but basically this does not occur.
That is, in terms of the characteristics of the photosensitive material, in the photon mode, the intrinsic sensitivity of the photosensitive material (energy for reaction required for image formation) with respect to the exposure power density (W / cm 2 ) (= energy density per unit time). In the heat mode, the intrinsic sensitivity of the photosensitive material increases with respect to the exposure power density. Therefore, when the exposure time is fixed so that the necessary productivity can be maintained in practice as an image recording material, when comparing the modes, the photon mode exposure usually has a high sensitivity of about 0.1 mJ / cm 2. However, since the reaction occurs at any small exposure amount, the problem of low exposure fogging in the unexposed area is likely to occur. On the other hand, in the heat mode exposure, the reaction does not occur unless the exposure amount is a certain level or more, and usually about 50 mJ / cm 2 is required because of the relationship with the thermal stability of the photosensitive material. The problem is avoided.
In fact, in the heat mode exposure, the exposure power density on the plate surface of the photosensitive material is required to be 5000 W / cm 2 or more, preferably 10000 W / cm 2 or more. However, although not described in detail here, use of a high power density laser of 5.0 × 10 5 W / cm 2 or more is not preferable because of problems such as ablation and contamination of the light source.
本発明によれば、ヒートモード対応ポジ型平版印刷版原版に有用であり、溶解性ディスクリに優れ、且つ、焼きだめ性が良好な画像形成材料を提供することができる。この画像形成材料を適用することで、現像ラチチュードに優れ、高感度で記録可能であり、焼きだめ性が改良されたポジ型平版印刷版原版を得ることができる。 According to the present invention, it is possible to provide an image forming material that is useful for a heat mode-compatible positive type lithographic printing plate precursor, that is excellent in solubility and has good shrinkage. By applying this image forming material, it is possible to obtain a positive planographic printing plate precursor which is excellent in development latitude, can be recorded with high sensitivity, and has improved shrinkage.
以下、本発明について詳細に説明する。
本発明の画像形成材料は、支持体上に、(A)構造単位としてフェノールを含むノボラック型フェノール樹脂、(B)光熱変換剤、及び(C)以下に詳述する一般式(II)で表されるスルホニウム塩、を含有する画像形成層を有して構成される。
以下に、本発明に係る画像形成層を構成する各成分について順次説明する。
Hereinafter, the present invention will be described in detail.
The image forming material of the present invention is represented by (A) a novolac type phenol resin containing phenol as a structural unit, (B) a photothermal conversion agent, and (C) a general formula (II) described in detail below on a support. And an image forming layer containing a sulfonium salt.
Below, each component which comprises the image forming layer which concerns on this invention is demonstrated sequentially.
[(A)構造単位としてフェノールを含むノボラック型フェノール樹脂]
本発明に係る画像形成層は、構造単位としてフェノールを含むノボラック型フェノール樹脂(特定ノボラック樹脂)を含有する。この特定ノボラック樹脂は、分子内に構造単位としてフェノールを含むものであれば特に制限はないが、好ましくは、構造単位としてのフェノールが、ノボラック樹脂を構成する構造単位中、20〜90モル%であることが好ましく、さらに好ましくは31〜85モル%であり、最も好ましくは51〜80モル%の範囲である。
[(A) Novolac-type phenol resin containing phenol as a structural unit]
The image forming layer according to the present invention contains a novolac-type phenol resin (specific novolac resin) containing phenol as a structural unit. The specific novolac resin is not particularly limited as long as it contains phenol as a structural unit in the molecule, but preferably, the phenol as the structural unit is 20 to 90 mol% in the structural unit constituting the novolak resin. It is preferable that it is 31 to 85 mol%, and most preferably in the range of 51 to 80 mol%.
このような特定ノボラック樹脂としては、(A−1)フェノールと下記一般式(I)で示される置換フェノール類をアルデヒド類で縮合してなる樹脂が好ましい態様として挙げられる。さらに好ましい態様としては、(A−2)フェノールと、クレゾール及びキシレノールから選ばれるフェノール類とをアルデヒド類で縮合してなる樹脂、から選択される樹脂が挙げられる。ここで、特定ノボラックを構成する、フェノール以外の構造単位である置換フェノールの成分数は複数であってもよい。 As such a specific novolac resin, a resin obtained by condensing (A-1) phenol and a substituted phenol represented by the following general formula (I) with an aldehyde is exemplified. As a more preferable embodiment, (A-2) a resin selected from resins obtained by condensing phenol and phenols selected from cresol and xylenol with aldehydes can be mentioned. Here, the number of components of the substituted phenol which is a structural unit other than phenol constituting the specific novolak may be plural.
<(A−1)フェノールと下記一般式(I)で示される置換フェノール類とをアルデヒド類で縮合してなる樹脂>
まず、(A−1)フェノールと下記一般式(I)で示される置換フェノール類とをアルデヒド類で縮合してなる樹脂(以下、適宜「(A−1)樹脂」と称する)について詳細に説明する。
<(A-1) Resin formed by condensing phenol and substituted phenol represented by the following general formula (I) with aldehydes>
First, a resin obtained by condensing (A-1) phenol and a substituted phenol represented by the following general formula (I) with an aldehyde (hereinafter, appropriately referred to as “(A-1) resin”) will be described in detail. To do.
一般式(I)において、R1及びR2は、それぞれ独立に、水素原子、アルキル基、又はハロゲン原子を表す。アルキル基としては、炭素数1〜3のアルキル基であることが好ましく、より好ましくは炭素数1又は2のアルキル基である。ハロゲン原子としては、フッ素原子、塩素原子、臭素原子及びヨウ素原子のいずれかであり、好ましくは塩素原子又は臭素原子である。また、R3は炭素数3〜6のアルキル基又はシクロアルキル基を表す。 In general formula (I), R 1 and R 2 each independently represents a hydrogen atom, an alkyl group, or a halogen atom. As an alkyl group, it is preferable that it is a C1-C3 alkyl group, More preferably, it is a C1-C2 alkyl group. The halogen atom is any one of a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, preferably a chlorine atom or a bromine atom. R 3 represents an alkyl group having 3 to 6 carbon atoms or a cycloalkyl group.
(A−1)樹脂の成分として使用される一般式(I)で表される置換フェノール類としては、具体的には、イソプロピルフェノール、t−ブチルフェノール、t−アミルフェノール、ヘキシルフェノール、シクロヘキシルフェノール、3−メチル−4−クロロ−6−t−ブチルフェノール、イソプロピルクレゾール、t−ブチルクレゾール、t−アミルクレゾール、等が挙げられる。これらの中でも、好ましくは、t−ブチルフェノール、t−ブチルクレゾールである。 (A-1) As substituted phenols represented by the general formula (I) used as a resin component, specifically, isopropylphenol, t-butylphenol, t-amylphenol, hexylphenol, cyclohexylphenol, 3-methyl-4-chloro-6-t-butylphenol, isopropyl cresol, t-butyl cresol, t-amyl resol and the like. Among these, t-butylphenol and t-butylcresol are preferable.
(A−1)樹脂に用いられるアルデヒド類の例としては、ホルムアルデヒド、アセトアルデヒド、アクロレイン、クロトンアルデヒド等の脂肪族及び芳香族アルデヒドが挙げられる。これらの中でも、好ましくは、ホルムアルデヒド又はアセトアルデヒドである。 (A-1) Examples of aldehydes used for the resin include aliphatic and aromatic aldehydes such as formaldehyde, acetaldehyde, acrolein, and crotonaldehyde. Among these, formaldehyde or acetaldehyde is preferable.
(A−1)樹脂を構成するモノマー中のフェノール含有率は、好ましくは21〜90モル%であり、31〜85モル%であることがさらに好ましく、51〜80モル%であることが最も好ましい。
また、(A−1)樹脂の重量平均分子量は、好ましくは500〜50000であり、更に700〜20000であることが好ましく、特に1000〜10000であることが好ましい。
(A-1) The phenol content in the monomer constituting the resin is preferably 21 to 90 mol%, more preferably 31 to 85 mol%, and most preferably 51 to 80 mol%. .
Moreover, the weight average molecular weight of (A-1) resin becomes like this. Preferably it is 500-50000, Furthermore, it is preferable that it is 700-20000, It is especially preferable that it is 1000-10000.
本発明に係る画像形成層中の全固形分に対する(A−1)樹脂の割合は、好ましくは0.1質量%〜20質量%であり、更に0.2質量%〜10質量%であることが好ましく、特に0.2質量%〜5質量%であることが好ましい。0.1質量%未満である場合、添加による効果が乏しく、また20質量%を超えて添加した場合感度が低下する傾向にある。 The ratio of the (A-1) resin to the total solid content in the image forming layer according to the present invention is preferably 0.1% by mass to 20% by mass, and further 0.2% by mass to 10% by mass. It is preferable that it is 0.2 mass%-5 mass% especially. When the amount is less than 0.1% by mass, the effect of the addition is poor, and when the amount exceeds 20% by mass, the sensitivity tends to decrease.
<(A−2)フェノールと、クレゾール及びキシレノールから選ばれるフェノール類と、をアルデヒド類で縮合してなる樹脂>
次に、前記(A−2)フェノールと、クレゾール及びキシレノールから選ばれるフェノール類と、をアルデヒド類で縮合してなる樹脂(以下、適宜「(A−2)樹脂」と称する。)について詳細に説明する。
<(A-2) Resin formed by condensing phenol and phenol selected from cresol and xylenol with aldehydes>
Next, a resin (hereinafter referred to as “(A-2) resin”) obtained by condensing (A-2) phenol and a phenol selected from cresol and xylenol with an aldehyde will be described in detail. explain.
(A−2)樹脂を得るための縮合反応に用いられるアルデヒド類としては、(A−1)樹脂の説明において述べたものが同様に挙げられる。 (A-2) Examples of the aldehydes used in the condensation reaction for obtaining the resin include those described in the description of the (A-1) resin.
本発明に用いる(A−2)樹脂としては、フェノールホルムアルデヒド樹脂、フェノール/クレゾール(m−,p−,又はm−/p−混合のいずれでもよい)混合ホルムアルデヒド樹脂等のノボラック樹脂などが好ましく挙げられる。 As the (A-2) resin used in the present invention, a novolak resin such as a phenol formaldehyde resin, a phenol / cresol (m-, p-, or m- / p-mixed) mixed formaldehyde resin is preferably exemplified. It is done.
(A−2)樹脂を構成するモノマー中のフェノール含有率は、好ましくは21〜90モル%であり、更に31〜85モル%であることが好ましく、特に51〜80モル%であることが好ましい。また、モノマー中にm−クレゾールを10モル%以上含有させた方が好ましい。 (A-2) The phenol content in the monomer constituting the resin is preferably 21 to 90 mol%, more preferably 31 to 85 mol%, and particularly preferably 51 to 80 mol%. . Further, it is preferable to contain 10 mol% or more of m-cresol in the monomer.
(A−2)樹脂の重量平均分子量は、好ましくは500〜50000であり、更に700〜20000であることが好ましく、特に1000〜10000であることが好ましい。また、その数平均分子量が500以上であることが好ましく、750〜650,000であることがより好ましい。分散度(重量平均分子量/数平均分子量)は、1.1〜10であることが好ましい。 (A-2) The weight average molecular weight of the resin is preferably 500 to 50,000, more preferably 700 to 20,000, and particularly preferably 1,000 to 10,000. The number average molecular weight is preferably 500 or more, and more preferably 750 to 650,000. The dispersity (weight average molecular weight / number average molecular weight) is preferably 1.1 to 10.
また、本発明に用いる(A−2)樹脂は、画像形成材料の画像記録層全固形分中、10質量%〜95質量%であることが好ましく、更に20質量%〜90質量%であることが好ましい。含有量が10質量%未満の場合、バーニング処理による耐刷向上効果が低くて使用できない場合がある。 The (A-2) resin used in the present invention is preferably 10% by mass to 95% by mass, and more preferably 20% by mass to 90% by mass, based on the total solid content of the image recording layer of the image forming material. Is preferred. If the content is less than 10% by mass, the effect of improving the printing durability by the burning treatment may be low and cannot be used.
本発明に係る(A−1)樹脂、(A−2)樹脂などの特定ノボラック樹脂は1種のみを用いてもよく、2種以上を混合して用いてもよい。
本発明に係る特定ノボラック樹脂以外の一般的なノボラック樹脂を併用することもできる。その場合、特定ノボラック樹脂以外のノボラック樹脂は、全ノボラック樹脂に対して5〜50質量%の範囲で混合することができ、5〜30質量%であることが好ましく、5〜20質量%の範囲であることが特に好ましい。
The specific novolak resin such as the (A-1) resin and the (A-2) resin according to the present invention may be used alone or in combination of two or more.
General novolac resins other than the specific novolac resin according to the present invention can be used in combination. In that case, novolak resins other than the specific novolak resin can be mixed in a range of 5 to 50% by mass, preferably 5 to 30% by mass, and in a range of 5 to 20% by mass with respect to the total novolac resin. It is particularly preferred that
本発明に係る特定ノボラック樹脂の製造方法としては、例えば、「新実験化学講座[19] 高分子化学[I]」(1993年、丸善出版)、第300項に記載の如く、フェノール及び置換フェノール類(例えば、(A−1)樹脂、(A−2)樹脂の説明において挙げた第2の成分であるクレゾール類など)を溶媒中、酸を触媒として、ホルムアルデヒド水溶液と共に反応させて、フェノールと、置換フェノール成分におけるo−位またはp−位と、ホルムアルデヒドとを、脱水縮合させることにより製造することができる。 Examples of the method for producing the specific novolak resin according to the present invention include phenols and substituted phenols as described in “New Experimental Chemistry Course [19] Polymer Chemistry [I]” (1993, Maruzen Publishing), Item 300. (For example, (A-1) resin, (A-2) second component cresols mentioned in the description of the resin) in a solvent using an acid as a catalyst and reacting with an aqueous formaldehyde solution, phenol and The o-position or p-position in the substituted phenol component and formaldehyde can be produced by dehydration condensation.
フェノール及び置換フェノール成分のo−位又はp−位と、ホルムアルデヒドとの脱水縮合は、フェノール及び置換フェノール成分の総質量として、これを濃度60〜90質量%、好ましくは70〜80質量%になるよう溶媒溶液に、ホルムアルデヒドをフェノール及び置換フェノール成分の総モル数に対するモル比率が0.2〜2.0、好ましくは0.4〜1.4、特に好ましくは0.6〜1.2になるよう加え、更に、酸触媒をフェノール及び置換フェノール成分の総モル数に対するモル比率が0.01〜0.1、好ましくは0.02〜0.05になるように10℃〜150℃の範囲の温度条件下で加え、その温度範囲に維持しながら数時間攪拌することにより行うことができる。なお、反応温度は、70℃〜150℃の範囲であることが好ましく、90℃〜140℃の範囲であることがより好ましい。 The dehydration condensation between the o-position or p-position of the phenol and the substituted phenol component and formaldehyde makes the total mass of the phenol and the substituted phenol component 60 to 90% by mass, preferably 70 to 80% by mass. In the solvent solution, the molar ratio of formaldehyde to the total number of moles of phenol and substituted phenol components is 0.2 to 2.0, preferably 0.4 to 1.4, particularly preferably 0.6 to 1.2. In addition, the acid catalyst has a molar ratio with respect to the total number of moles of phenol and substituted phenol components of 0.01 to 0.1, preferably 0.02 to 0.05. It can be performed by adding under temperature conditions and stirring for several hours while maintaining the temperature range. In addition, it is preferable that reaction temperature is the range of 70 to 150 degreeC, and it is more preferable that it is the range of 90 to 140 degreeC.
用いられる溶媒としては、例えば、水、酢酸、メタノール、エタノール、2−プロパノール、2−メトキシエタノール、エチルプロピオネート、エトキシエチルプロピオネート、4−メチル−2−ペンタノン、ジオキサン、キシレン、ベンゼン等が挙げられる。 Examples of the solvent used include water, acetic acid, methanol, ethanol, 2-propanol, 2-methoxyethanol, ethylpropionate, ethoxyethylpropionate, 4-methyl-2-pentanone, dioxane, xylene, benzene and the like. Is mentioned.
また、上記酸触媒としては、塩酸、硫酸、p−トルエンスルホン酸、リン酸、シュウ酸、酒石酸、クエン酸、酢酸亜鉛、酢酸マンガン、酢酸コバルト、メチルスルホン酸マグネシウム、塩化アルミニウム、酸化亜鉛等を挙げることができる。 Examples of the acid catalyst include hydrochloric acid, sulfuric acid, p-toluenesulfonic acid, phosphoric acid, oxalic acid, tartaric acid, citric acid, zinc acetate, manganese acetate, cobalt acetate, magnesium methylsulfonate, aluminum chloride, and zinc oxide. Can be mentioned.
合成したフェノール樹脂の残存モノマー及びダイマーは蒸留により除去し、その残留モノマー及びダイマー濃度が0.01〜10質量%まで蒸留することが好ましく、0.01〜2.0質量%まで蒸留することがさらに好ましい。 The residual monomer and dimer of the synthesized phenol resin are removed by distillation, and the residual monomer and dimer concentration is preferably distilled to 0.01 to 10% by mass, and may be distilled to 0.01 to 2.0% by mass. Further preferred.
本発明において好適に用いられる特定ノボラック樹脂の具体例〔(S−1)〜(S−18)〕を以下に示す。
(S−1)フェノールとm−クレゾールとp−クレゾールの縮重合体
(モル比30:50:20、重量平均分子量4000)
(S−2)フェノールとm−クレゾールとo−クレゾールの縮重合体
(モル比50:30:20、重量平均分子量5500)
(S−3)フェノールとm−クレゾールとp−クレゾールの縮重合体
(モル比70:10:20、重量平均分子量4500)
(S−4)フェノールとm−クレゾールとp−クレゾールの縮重合体
(モル比50:30:20、重量平均分子量4200)
(S−5)フェノールとm−クレゾールの縮重合体
(モル比70:30、重量平均分子量4500)
(S−6)フェノールとp−クレゾールの縮重合体
(モル比60:40、重量平均分子量6000)
(S−7)フェノールとo−クレゾールの縮重合体
(モル比50:50、重量平均分子量3900)
(S−8)フェノールとp−エチルフェノールの縮重合体
(モル比40:60、重量平均分子量4000)
(S−9)フェノールとp−ターシャリーブチルフェノールの縮重合体
(モル比80:20、重量平均分子量5000)
Specific examples [(S-1) to (S-18)] of specific novolak resins preferably used in the present invention are shown below.
(S-1) A polycondensation product of phenol, m-cresol and p-cresol (molar ratio 30:50:20, weight average molecular weight 4000)
(S-2) A polycondensation product of phenol, m-cresol and o-cresol (molar ratio 50:30:20, weight average molecular weight 5500)
(S-3) A polycondensation product of phenol, m-cresol and p-cresol (molar ratio 70:10:20, weight average molecular weight 4500)
(S-4) A polycondensation product of phenol, m-cresol and p-cresol (molar ratio 50:30:20, weight average molecular weight 4200)
(S-5) A polycondensation product of phenol and m-cresol (molar ratio 70:30, weight average molecular weight 4500)
(S-6) A polycondensation product of phenol and p-cresol (molar ratio 60:40, weight average molecular weight 6000)
(S-7) A polycondensation product of phenol and o-cresol (molar ratio 50:50, weight average molecular weight 3900)
(S-8) Condensation polymer of phenol and p-ethylphenol (molar ratio 40:60, weight average molecular weight 4000)
(S-9) A polycondensation product of phenol and p-tertiary butylphenol (molar ratio 80:20, weight average molecular weight 5000)
(S−10)フェノールと2,5−キシレノールの縮重合体
(モル比90:10、重量平均分子量8000)
(S−11)フェノールと2,3−キシレノールの縮重合体
(モル比75:25、重量平均分子量4400)
(S−12)フェノールと2,4−キシレノールの縮重合体
(モル比80:20、重量平均分子量5500)
(S−13)フェノールと3,4−キシレノールの縮重合体
(モル比70:30、重量平均分子量7400)
(S−14)フェノールとp−ノニルフェノールの縮重合体
(モル比30:70、重量平均分子量9800)
(S−15)フェノールとp−フェニルフェノールの縮重合体
(モル比65:45、重量平均分子量4000)
(S−16)フェノールとo−フェニルフェノールの縮重合体
(モル比50:50、重量平均分子量4500)
(S−17)フェノールとm−クレゾールと2,5−キシレノールの縮重合体
(モル比80:15:5、重量平均分子量5500)
(S−18)フェノールとm−クレゾールとp−フェニルフェノールの縮重合体
(モル比40:10:50、重量平均分子量4500)
これらの中においては、(S−1)〜(S−13)が好ましく、(S−1)〜(S−8)がより好ましい。
(S-10) A condensation polymer of phenol and 2,5-xylenol (molar ratio 90:10, weight average molecular weight 8000)
(S-11) A condensation polymer of phenol and 2,3-xylenol (molar ratio 75:25, weight average molecular weight 4400)
(S-12) A condensation polymer of phenol and 2,4-xylenol (molar ratio 80:20, weight average molecular weight 5500)
(S-13) A condensation polymer of phenol and 3,4-xylenol (molar ratio 70:30, weight average molecular weight 7400)
(S-14) A polycondensation product of phenol and p-nonylphenol (molar ratio 30:70, weight average molecular weight 9800)
(S-15) A condensation polymer of phenol and p-phenylphenol (molar ratio 65:45, weight average molecular weight 4000)
(S-16) A polycondensation product of phenol and o-phenylphenol (molar ratio 50:50, weight average molecular weight 4500)
(S-17) A polycondensation product of phenol, m-cresol and 2,5-xylenol (molar ratio 80: 15: 5, weight average molecular weight 5500)
(S-18) A polycondensation product of phenol, m-cresol and p-phenylphenol (molar ratio 40:10:50, weight average molecular weight 4500)
In these, (S-1)-(S-13) are preferable and (S-1)-(S-8) are more preferable.
本発明に係る画像形成層には、前記特定ノボラック樹脂以外に、水不溶且つアルカリ水可溶性樹脂(以下、適宜「他のアルカリ可溶性樹脂」と称する。)を併用することができ、これらを併用することは現像ラチチュード拡大の観点から好ましい。 In the image forming layer according to the present invention, in addition to the specific novolak resin, a water-insoluble and alkaline water-soluble resin (hereinafter, referred to as “other alkali-soluble resin” as appropriate) can be used in combination. This is preferable from the viewpoint of enlarging the development latitude.
他のアルカリ可溶性樹脂としては、例えば、ポリヒドロキシスチレン、ポリハロゲン化ヒドロキシスチレン、N−(4−ヒドロキシフェニル)メタクリルアミドの共重合体、ハイドロキノンモノメタクリレート共重合体の他、特開平7−28244号公報記載のスルホニルイミド系ポリマー、特開平7−36184号公報記載のカルボキシル基含有ポリマーなどが挙げられる。その他特開昭51−34711号公報に開示されているようなフェノール性水酸基を含有するアクリル系樹脂、特開平2−866号に記載のスルホンアミド基を有するアクリル系樹脂や、ウレタン系の樹脂等、種々のアルカリ可溶性の高分子化合物も用いることができる。 Examples of other alkali-soluble resins include polyhydroxystyrene, polyhalogenated hydroxystyrene, N- (4-hydroxyphenyl) methacrylamide copolymer, hydroquinone monomethacrylate copolymer, and JP-A-7-28244. Examples thereof include sulfonylimide-based polymers described in the publication, and carboxyl group-containing polymers described in JP-A-7-36184. Other acrylic resins containing phenolic hydroxyl groups as disclosed in JP-A-51-34711, acrylic resins having sulfonamide groups described in JP-A-2-866, urethane-based resins, etc. Various alkali-soluble polymer compounds can also be used.
これら他のアルカリ可溶性樹脂は、重量平均分子量が500〜200,000で、数平均分子量が200〜60,000のものが好ましい。
上記他のアルカリ可溶性樹脂は、1種類あるいは2種類以上を組合せて使用してもよい。併用可能な添加量としては、記録層全固形分中0.5〜30質量%であることが好ましく、さらに好ましくは、0.5〜20質量%の範囲である。
These other alkali-soluble resins preferably have a weight average molecular weight of 500 to 200,000 and a number average molecular weight of 200 to 60,000.
The other alkali-soluble resins may be used alone or in combination of two or more. The addition amount that can be used in combination is preferably 0.5 to 30% by mass, more preferably 0.5 to 20% by mass in the total solid content of the recording layer.
[(C)一般式(II)で表されるスルホニウム塩]
本発明に係る画像形成層は、下記一般式(II)で表されるスルホニウム塩を含有する。
[(C) Sulfonium salt represented by general formula (II) ]
Image forming layer according to the present invention, you sulphonium salt represented by the following general formula (II).
式(II)中、R21、R22及びR23は、それぞれ同じでも異なっていてもよく、置換基を有する炭素原子数20個以下の炭化水素基を示す。前記炭化水素基が有する置換基としては、ハロゲン原子、ニトロ基、炭素原子数12個以下のアルキル基、炭素原子数12個以下のアルコキシ基、または炭素原子数12個以下のアリールオキシ基が挙げられる。
(Z21)-はpKa<5であるスルホン酸化合物の残基又はpKa<5であるカルボン酸化合物の残基を示す。
Wherein (II), R 21, R 22 and R 23, rather it may also be the same as or different from each other, it represents a hydrocarbon group having 20 or less carbon atoms having a substituent. Examples of the substituent of the hydrocarbon group include a halogen atom, a nitro group, an alkyl group having 12 or less carbon atoms, an alkoxy group having 12 or less carbon atoms, or an aryloxy group having 12 or less carbon atoms. It is done.
(Z 21 ) − represents a residue of a sulfonic acid compound having pKa <5 or a residue of a carboxylic acid compound having pKa <5 .
上記(Z21)-で表される残基を構成するスルホン酸化合物の具体例としては、例えば、メタンスルホン酸、エタンスルホン酸、プロパンスルホン酸、ブタンスルホン酸、ペンタンスルホン酸、ヘキサンスルホン酸、ヘプタンスルホン酸、オクタンスルホン酸、ノナンスルホン酸、デカンスルホン酸、ウンデカンスルホン酸、ドデカンスルホン酸、トリデカンスルホン酸、テトラデカンスルホン酸、ペンタデカンスルホン酸、ヘキサデカンスルホン酸、ヘプタデカンスルホン酸、オクタデカンスルホン酸、ノナデカンスルホン酸、イコサンスルホン酸、ヘンイコサンスルホン酸、ドコサンスルホン酸、トリコサンスルホン酸、テトラコンサンスルホン酸等のアルキルスルホン酸、例えば、フルオロメタンスルホン酸、ジフルオロメタンスルホン酸、トリフルオロメタンスルホン酸、クロロメタンスルホン酸、ジクロロメタンスルホン酸、トリクロロメタンスルホン酸、ブロモメタンスルホン酸、ジブロモメタンスルホン酸、トリブロモメタンスルホン酸、ヨードメタンスルホン酸、ジヨードメタンスルホン酸、トリヨードメタンスルホン酸、フルオロエタンスルホン酸、ジフルオロエタンスルホン酸、トリフルオロエタンスルホン酸、ペンタフルオロエタンスルホン酸、クロロエタンスルホン酸、ジクロロエタンスルホン酸、トリクロロエタンスルホン酸、ペンタクロロエタンスルホン酸、トリブロモエタンスルホン酸、ペンタブロモエタンスルホン酸、トリヨードエタンスルホン酸、ぺンタヨードエタンスルホン酸、フルオロプロパンスルホン酸、トリフルオロプロパンスルホン酸、ヘプタフルオロプロパンスルホン酸、クロロプロパンスルホン酸、トリクロロプロパンスルホン酸、ヘプタクロロプロパンスルホン酸、ブロモプロパンスルホン酸、トリブロモプロパンスルホン酸、ヘプタブロモプロパンスルホン酸、トリヨードプロパンスルホン酸、ヘプタヨードプロパンスルホン酸、トリフルオロブタンスルホン酸、ノナフルオロブタンスルホン酸、トリクロロブタンスルホン酸、ノナクロロブタンスルホン酸、トリブロモブタンスルホン酸、ノナブロモブタンスルホン酸、トリヨードブタンスルホン酸、ノナヨードブタンスルホン酸、 Specific examples of the sulfonic acid compound constituting the residue represented by (Z 21 ) − include, for example, methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid, pentanesulfonic acid, hexanesulfonic acid, Heptanesulfonic acid, octanesulfonic acid, nonanesulfonic acid, decanesulfonic acid, undecanesulfonic acid, dodecanesulfonic acid, tridecanesulfonic acid, tetradecanesulfonic acid, pentadecanesulfonic acid, hexadecanesulfonic acid, heptadecanesulfonic acid, octadecanesulfonic acid, Alkyl sulfonic acids such as nonadecane sulfonic acid, icosane sulfonic acid, henicosane sulphonic acid, docosane sulphonic acid, tricosane sulphonic acid, tetraconsul sulphonic acid, e.g. Acid, trifluoromethanesulfonic acid, chloromethanesulfonic acid, dichloromethanesulfonic acid, trichloromethanesulfonic acid, bromomethanesulfonic acid, dibromomethanesulfonic acid, tribromomethanesulfonic acid, iodomethanesulfonic acid, diiodomethanesulfonic acid, triiodo Methanesulfonic acid, fluoroethanesulfonic acid, difluoroethanesulfonic acid, trifluoroethanesulfonic acid, pentafluoroethanesulfonic acid, chloroethanesulfonic acid, dichloroethanesulfonic acid, trichloroethanesulfonic acid, pentachloroethanesulfonic acid, tribromoethanesulfonic acid, pentabromo Ethanesulfonic acid, triiodoethanesulfonic acid, pentaiodoethanesulfonic acid, fluoropropanesulfonic acid, trifluoropropanesulfone , Heptafluoropropanesulfonic acid, chloropropanesulfonic acid, trichloropropanesulfonic acid, heptachloropropanesulfonic acid, bromopropanesulfonic acid, tribromopropanesulfonic acid, heptabromopropanesulfonic acid, triiodopropanesulfonic acid, heptaiodopropanesulfonic acid, Trifluorobutanesulfonic acid, nonafluorobutanesulfonic acid, trichlorobutanesulfonic acid, nonachlorobutanesulfonic acid, tribromobutanesulfonic acid, nonabromobutanesulfonic acid, triiodobutanesulfonic acid, nonaiodobutanesulfonic acid,
トリフルオロペンタンスルホン酸、パーフルオロペンタンスルホン酸、トリクロロペンタンスルホン酸、パークロロペンタンスルホン酸、トリブロモペンタンスルホン酸、パーブロモペンタンスルホン酸、トリヨードペンタンスルホン酸、パーヨードペンタンスルホン酸、トリフルオロヘキサンスルホン酸、パーフルオロヘキサンスルホン酸、トリクロロヘキサンスルホン酸、パークロロヘキサンスルホン酸、パーブロモヘキサンスルホン酸、パーヨードヘキサンスルホン酸、トリフルオロヘプタンスルホン酸、パーフルオロヘプタンスルホン酸、トリクロロヘプタンスルホン酸、パークロロヘプタンスルホン酸、パーブロモヘプタンスルホン酸、パーヨードヘプタンスルホン酸、トリフルオロオクタンスルホン酸、パーフルオロオクタンスルホン酸、トリクロロオクタンスルホン酸、パークロロオクタンスルホン酸、パーブロモオクタンスルホン酸、パーヨードオクタンスルホン酸、トリフルオロノナンスルホン酸、パーフルオロノナンスルホン酸、トリクロロノナンスルホン酸、パークロロノナンスルホン酸、パーブロモノテンスルホン酸、パーヨードノナンスルホン酸、トリフルオロデカンスルホン酸、パーフルオロデカンスルホン酸、トリクロロデカンスルホン酸、パークロロデカンスルホン酸、パーブロモデカンスルホン酸、パーヨードデカンスルホン酸、トリフルオロウンデカンスルホン酸、パーフルオロウンデカンスルホン酸、トリクロロウンデカンスルホン酸、パークロロウンデカンスルホン酸、パーブロモウンデカンスルホン酸、パーヨードウンデカンスルホン酸、トリフルオロドデカンスルホン酸、パーフルオロドデカンスルホン酸、トリクロロドデカンスルホン酸、パークロロドデカンスルホン酸、パーブロモドデカンスルホン酸、パーヨードドデカンスルホン酸、トリフルオロトリデカンスルホン酸、パーフルオロトリデカンスルホン酸、トリクロロトリデカンスルホン酸、パークロロトリデカンスルホン酸、パーブロモトリデカンスルホン酸、パーヨードトリデカンスルホン酸、 Trifluoropentanesulfonic acid, perfluoropentanesulfonic acid, trichloropentanesulfonic acid, perchloropentanesulfonic acid, tribromopentanesulfonic acid, perbromopentanesulfonic acid, triiodopentanesulfonic acid, periododopentanesulfonic acid, trifluorohexane Sulfonic acid, perfluorohexanesulfonic acid, trichlorohexanesulfonic acid, perchlorohexanesulfonic acid, perbromohexanesulfonic acid, periodohexanesulfonic acid, trifluoroheptanesulfonic acid, perfluoroheptanesulfonic acid, trichloroheptanesulfonic acid, perfluorohexane Chloroheptane sulfonic acid, perbromoheptane sulfonic acid, periodate heptane sulfonic acid, trifluorooctane sulfonic acid, perfluorooctance Phosphonic acid, trichlorooctane sulfonic acid, perchlorooctane sulfonic acid, perbromooctane sulfonic acid, periodooctane sulfonic acid, trifluorononane sulfonic acid, perfluorononane sulfonic acid, trichlorononane sulfonic acid, perchlorononane sulfonic acid, per Bromonotenesulfonic acid, periodononanesulfonic acid, trifluorodecanesulfonic acid, perfluorodecanesulfonic acid, trichlorodecanesulfonic acid, perchlorodecanesulfonic acid, perbromodecanesulfonic acid, periodododecanesulfonic acid, trifluoroundecane Sulfonic acid, perfluoroundecane sulfonic acid, trichloroundecane sulfonic acid, perchloroundecane sulfonic acid, perbromoundecane sulfonic acid, periodoundecane sulfone , Trifluorododecanesulfonic acid, perfluorododecanesulfonic acid, trichlorododecanesulfonic acid, perchlorododecanesulfonic acid, perbromododecanesulfonic acid, periodododecanesulfonic acid, trifluorotridecanesulfonic acid, perfluorotridecanesulfonic acid, trichloro Tridecanesulfonic acid, perchlorotridecanesulfonic acid, perbromotridecanesulfonic acid, periodotridecanesulfonic acid,
トリフルオロテトラデカンスルホン酸、パーフルオロテトラデカンスルホン酸、トリクロロテトラデカンスルホン酸、パークロロテトラデカンスルホン酸、パーブロモテトラデカンスルホン酸、パーヨードテトラデカンスルホン酸、トリフルオロペンタデカンスルホン酸、パーフルオロペンタデカンスルホン酸、トリクロロペンタデカンスルホン酸、パークロロペンタデカンスルホン酸、パーブロモペンタデカンスルホン酸、パーヨードペンタデカンスルホン酸、パーフルオロヘキサデカンスルホン酸、パークロロヘキサデカンスルホン酸、パーブロモヘキサデカンスルホン酸、パーヨードヘキサデカンスルホン酸、パーフルオロヘプタデカンスルホン酸、パークロロヘプタデカンスルホン酸、パーブロモヘプタデカンスルホン酸、パーヨードヘプタデカンスルホン酸、パーフルオロオクタデカンスルホン酸、パークロロオクタデカンスルホン酸、パーブロモオクタデカンスルホン酸、パーヨードオクタデカンスルホン酸、パーフルオロノナデカンスルホン酸、パークロロノナデカンスルホン酸、パーブロモノナデカンスルホン酸、パーヨードノナデカンスルホン酸、パーフルオロイコサンスルホン酸、パークロロイコサンスルホン酸、パーブロモイコサンスルホン酸、パーヨードイコサンスルホン酸、パーフルオロヘンイコサンスルホン酸、パークロロヘンイコサンスルホン酸、パーブロモヘンイコサンスルホン酸、パーヨードヘンイコサンスルホン酸、パーフルオロドコサンスルホン酸、パークロロドコサンスルホン酸、パーブロモドコサンスルホン酸、パーヨードドコサンスルホン酸、パーフルオロトリコサンスルホン酸、パークロロトリコサンスルホン酸、パーブロモトリコサンスルホン酸、パーヨードトリコサンスルホン酸、パーフルオロテトラコンサンスルホン酸、パークロロテトラコンサンスルホン酸、パーブロモテトラコンサンスルホン酸、パーヨードテトラコンサンスルホン酸等のハロアルキルスルホン酸、 Trifluorotetradecanesulfonic acid, perfluorotetradecanesulfonic acid, trichlorotetradecanesulfonic acid, perchlorotetradecanesulfonic acid, perbromotetradecanesulfonic acid, periodotetradecanesulfonic acid, trifluoropentadecanesulfonic acid, perfluoropentadecanesulfonic acid, trichloropentadecanesulfonic acid Acid, perchloropentadecanesulfonic acid, perbromopentadecanesulfonic acid, periodopentadecanesulfonic acid, perfluorohexadecanesulfonic acid, perchlorohexadecanesulfonic acid, perbromohexadecanesulfonic acid, periodohexadecanesulfonic acid, perfluoroheptadecanesulfonic acid Perchloroheptadecanesulfonic acid, perbromoheptadecanesulfonic acid, perio Heptadecanesulfonic acid, perfluorooctadecanesulfonic acid, perchlorooctadecanesulfonic acid, perbromooctadecanesulfonic acid, periodooctadecanesulfonic acid, perfluorononadecanesulfonic acid, perchlorononadecanesulfonic acid, perbromononadecanesulfonic acid, Periodononadecanesulfonic acid, perfluoroicosanesulfonic acid, perchloroicosanesulfonic acid, perbromoicosanesulfonic acid, periodoicosanesulfonic acid, perfluoroheneicosansulfonic acid, perchlorohicosansulfonic acid , Perbromohenicosan sulfonic acid, periodohenicosan sulfonic acid, perfluoro docosan sulfonic acid, perchlorodocosane sulfonic acid, perbromodocosane sulfonic acid, periodo doco sans Phosphonic acid, perfluorotricosansulfonic acid, perchlorotricosansulfonic acid, perbromotricosansulfonic acid, periodotricosanesulfonic acid, perfluorotetraconsansulfonic acid, perchlorotetraconsansulfonic acid, perbromotetracene Consansulfonic acid, haloalkylsulfonic acid such as periododotetraconsansulfonic acid,
例えば、シクロペンタンスルホン酸、シクロヘキサンスルホン酸等のシクロアルキルスルホン酸、例えば、2−フルオロシクロペンタンスルホン酸、2−クロロシクロペンタンスルホン酸、2−ブロモシクロペンタンスルホン酸、2−ヨードシクロペンタンスルホン酸、3−フルオロシクロペンタンスルホン酸、3−クロロシクロペンタンスルホン酸、3−ブロモシクロペンタンスルホン酸、3−ヨードシクロペンタンスルホン酸、3,4−ジフルオロシクロペンタンスルホン酸、3,4−ジクロロシクロペンタンスルホン酸、3,4−ジブロモシクロペンタンスルホン酸、3,4−ジヨードシクロペンタンスルホン酸、4−フルオロシクロヘキサンスルホン酸、4−クロロシクロヘキサンスルホン酸、4−ブロモシクロヘキサンスルホン酸、4−ヨードシクロヘキサンスルホン酸、2,4−ジフルオロシクロヘキサンスルホン酸、2,4−ジクロロシクロヘキサンスルホン酸、2,4−ジブロモシクロヘキサンスルホン酸、2,4−ジヨードシクロヘキサンスルホン酸、2,4,6−トリフルオロシクロヘキサンスルホン酸、2,4,6−トリクロロシクロヘキサンスルホン酸、2,4,6−トリブロモシクロヘキサンスルホン酸、2,4,6−トリヨードシクロヘキサンスルホン酸、テトラフルオロシクロヘキサンスルホン酸、テトラクロロシクロヘキサンスルホン酸、テトラブロモシクロヘキサンスルホン酸、テトラヨードシクロヘキサンスルホン酸等のハロゲン化シクロアルキルスルホン酸、 For example, cycloalkylsulfonic acid such as cyclopentanesulfonic acid and cyclohexanesulfonic acid, such as 2-fluorocyclopentanesulfonic acid, 2-chlorocyclopentanesulfonic acid, 2-bromocyclopentanesulfonic acid, 2-iodocyclopentanesulfonic acid 3-fluorocyclopentanesulfonic acid, 3-chlorocyclopentanesulfonic acid, 3-bromocyclopentanesulfonic acid, 3-iodocyclopentanesulfonic acid, 3,4-difluorocyclopentanesulfonic acid, 3,4-dichlorocyclopentane Sulfonic acid, 3,4-dibromocyclopentanesulfonic acid, 3,4-diiodocyclopentanesulfonic acid, 4-fluorocyclohexanesulfonic acid, 4-chlorocyclohexanesulfonic acid, 4-bromocyclohexanesulfonic acid 4-iodocyclohexanesulfonic acid, 2,4-difluorocyclohexanesulfonic acid, 2,4-dichlorocyclohexanesulfonic acid, 2,4-dibromocyclohexanesulfonic acid, 2,4-diiodocyclohexanesulfonic acid, 2,4,6- Trifluorocyclohexanesulfonic acid, 2,4,6-trichlorocyclohexanesulfonic acid, 2,4,6-tribromocyclohexanesulfonic acid, 2,4,6-triiodocyclohexanesulfonic acid, tetrafluorocyclohexanesulfonic acid, tetrachlorocyclohexane Halogenated cycloalkylsulfonic acid such as sulfonic acid, tetrabromocyclohexanesulfonic acid, tetraiodocyclohexanesulfonic acid,
例えば、ベンゼンスルホン酸、ナンタレンスルホン酸、アントラセンスルホン酸、フェナントレンスルホン酸、ピレンスルホン酸等の方香族スルホン酸、例えば、2−フルオロベンゼンスルホン酸、3−フルオロベンゼンスルホン酸、4−フルオロベンゼンスルホン酸、2−クロロベンゼンスルホン酸、3−クロロベンゼンスルホン酸、4−クロロベンゼンスルホン酸、2−ブロモべンゼンスルホン酸、3−ブロモベンゼンスルホン酸、4−ブロモベンゼンスルホン酸、2−ヨードベンゼンスルホン酸、4−ヨードベンゼンスルホン酸、2,4−ジフルオロベンゼンスルホン酸、2,6−ジフルオロベンゼンスルホン酸、2,4−ジクロロベンゼンスルホン酸、2,6−ジクロロベンゼンスルホン酸、2,4−ジブロモベンゼンスルホン酸、2,6−ジブロモベンゼンスルホン酸、2,4−ジヨードベンゼンスルホン酸、2,6−ジヨードベンゼンスルホン酸、2,4,6−トリフルオロベンゼンスルホン酸、3,4,5−トリフルオロベンゼンスルホン酸、2,4,6−トリクロロベンゼンスルホン酸、3,4,5−トリクロロベンゼンスルホン酸、2,4,6−トリブロモベンゼンスルホン酸、3,4,5−トリブロモベンゼンスルホン酸、2,4,6−トリヨードベンゼンスルホン酸、3,4,5−トリヨードベンゼンスルホン酸、ペンタフルオロベンゼンスルホン酸、ペンタクロロベンゼンスルホン酸、ペンタブロモベンゼンスルホン酸、ペンタヨードベンゼンスルホン酸、フルオロナフタレンスルホン酸、クロロナフタレンスルホン酸、ブロモナフタレンスルホン酸、ヨードナフタレンスルホン酸、フルオロアントラセンスルホン酸、クロロアントラセンスルホン酸、ブロモアントラセンスルホン酸、ヨードアントンセンスルホン酸等のハロゲン化芳香接スルホン酸、 For example, aromatic aromatic sulfonic acids such as benzenesulfonic acid, nanthalenesulfonic acid, anthracenesulfonic acid, phenanthrenesulfonic acid, pyrenesulfonic acid, such as 2-fluorobenzenesulfonic acid, 3-fluorobenzenesulfonic acid, 4-fluorobenzene Sulfonic acid, 2-chlorobenzenesulfonic acid, 3-chlorobenzenesulfonic acid, 4-chlorobenzenesulfonic acid, 2-bromobenzenesulfonic acid, 3-bromobenzenesulfonic acid, 4-bromobenzenesulfonic acid, 2-iodobenzenesulfonic acid, 4-iodobenzenesulfonic acid, 2,4-difluorobenzenesulfonic acid, 2,6-difluorobenzenesulfonic acid, 2,4-dichlorobenzenesulfonic acid, 2,6-dichlorobenzenesulfonic acid, 2,4-dibromobenzenesulfone acid, , 6-Dibromobenzenesulfonic acid, 2,4-diiodobenzenesulfonic acid, 2,6-diiodobenzenesulfonic acid, 2,4,6-trifluorobenzenesulfonic acid, 3,4,5-trifluorobenzenesulfone Acid, 2,4,6-trichlorobenzenesulfonic acid, 3,4,5-trichlorobenzenesulfonic acid, 2,4,6-tribromobenzenesulfonic acid, 3,4,5-tribromobenzenesulfonic acid, 2, 4,6-triiodobenzenesulfonic acid, 3,4,5-triiodobenzenesulfonic acid, pentafluorobenzenesulfonic acid, pentachlorobenzenesulfonic acid, pentabromobenzenesulfonic acid, pentaiodobenzenesulfonic acid, fluoronaphthalenesulfonic acid, Chloronaphthalenesulfonic acid, bromonaphthalenesulfonic acid, iodine De naphthalenesulfonic acid, fluoro anthracene sulfonic acid, chloro anthracene sulfonic acid, bromoanthracene acid, halogenated aromatic contact sulfonic acids such as iodine Anton Sen sulfonic acid,
例えば、p−トルエンスルホン酸、4−イソプロピルベンゼンスルホン酸、3,5−ビス(トリメチル)ベンゼンスルホン酸、3,5−ビス(イソプロピル)ベンゼンスルホン酸、2,4,6−トリス(トリメチル)ベンゼンスルホン酸、2,4,6−トリス(イソプロピル)ベンゼンスルホン酸等のアルキル芳香族スルホン酸、例えば、2−トリフルオロメチルベンゼンスルホン酸、2−トリクロロメチルベンゼンスルホン酸、2−トリブロモメチルベンゼンスルホン酸、2−トリヨードメチルベンゼンスルホン酸、3−トリフルオロメチルベンゼンスルホン酸、3−トリクロロメチルベンゼンスルホン酸、3−トリブロモメチルベンゼンスルホン酸、3−トリヨードメチルベンゼンスルホン酸、4−トリフルオロメチルベンゼンスルホン酸、4−トリクロロメチルベンゼンスルホン酸、4−トリブロモメチルベンゼンスルホン酸、4−トリヨードメチルベンゼンスルホン酸、2,6−ビス(トリフルオロメチル)ベンゼンスルホン酸、2,6−ビス(トリクロロメチル)ベンゼンスルホン酸、2,6−ビス(トリブロモメチル)ベンゼンスルホン酸、2,6−ビス(トリヨードメチル)ベンゼンスルホン酸、3,5−ビス(トリフルオロメチル)ベンゼンスルホン酸、3,5−ビス(トリクロロメチル)ベンゼンスルホン酸、3,5−ビス(トリブロモメチル)ベンゼンスルホン酸、3,5−ビス(トリヨードメチル)ベンゼンスルホン酸等のハロゲン化アルキル芳香族スルホン酸、例えば、ベンジルスルホン酸、フェネチルスルホン酸、フェニルプロピルスルホン酸、フェニルブチルスルホン酸、フェニルペンチルスルホン酸、フェニルヘキシルスルホン酸、フェニルヘプチルスルホン酸、フェニルオクチルスルホン酸、フェニルノニルスルホン酸等の芳香脂肪族スルホン酸、 For example, p-toluenesulfonic acid, 4-isopropylbenzenesulfonic acid, 3,5-bis (trimethyl) benzenesulfonic acid, 3,5-bis (isopropyl) benzenesulfonic acid, 2,4,6-tris (trimethyl) benzene Alkyl aromatic sulfonic acids such as sulfonic acid and 2,4,6-tris (isopropyl) benzenesulfonic acid, such as 2-trifluoromethylbenzenesulfonic acid, 2-trichloromethylbenzenesulfonic acid, 2-tribromomethylbenzenesulfone Acid, 2-triiodomethylbenzenesulfonic acid, 3-trifluoromethylbenzenesulfonic acid, 3-trichloromethylbenzenesulfonic acid, 3-tribromomethylbenzenesulfonic acid, 3-triiodomethylbenzenesulfonic acid, 4-trifluoro Methylbenzenesulfone 4-trichloromethylbenzenesulfonic acid, 4-tribromomethylbenzenesulfonic acid, 4-triiodomethylbenzenesulfonic acid, 2,6-bis (trifluoromethyl) benzenesulfonic acid, 2,6-bis (trichloromethyl) Benzenesulfonic acid, 2,6-bis (tribromomethyl) benzenesulfonic acid, 2,6-bis (triiodomethyl) benzenesulfonic acid, 3,5-bis (trifluoromethyl) benzenesulfonic acid, 3,5- Halogenated alkyl aromatic sulfonic acids such as bis (trichloromethyl) benzenesulfonic acid, 3,5-bis (tribromomethyl) benzenesulfonic acid, 3,5-bis (triiodomethyl) benzenesulfonic acid, such as benzylsulfone Acid, phenethylsulfonic acid, phenylpropylsulfonic acid, pheny Butyl sulfonic acid, phenyl pentyl sulfonic acid, phenyl hexyl sulfonic acid, phenyl heptyl sulfonate, phenyl octyl sulfonic acid, aromatic aliphatic sulfonic acid such as phenyl nonyl acid,
例えば、4−フルオロフェニルメチルスルホン酸、4−クロロフェニルメチルスルホン酸、4−ブロモフェニルメチルスルホン酸、4−ヨードフェニルメチルスルホン酸、テトラフルオロフェニルメチルスルホン酸、テトラクロロフェニルメチルスルホン酸、テトラブロモフェニルメチルスルホン酸、テトラヨードフェニルメチルスルホン酸、4−フルオロフェニルエチルスルホン酸、4−クロロフェニルエチルスルホン酸、4−ブロモフェニルエチルスルホン酸、4−ヨードフェニルエチルスルホン酸.4−フルオロフェニルプロピルスルホン酸、4−クロロフェニルプロピルスルホン酸、4−ブロモフェニルプロピルスルホン酸、4−ヨードフェニルプロピルスルホン酸、4−フルオロフェニルブチルスルホン酸、4−クロロフェニルブチルスルホン酸、4−ブロモフェニルブチルスルホン酸、4−ヨードフェニルブチルスルホン酸等のハロゲン化芳香脂肪族スルホン酸、例えば、カンファースルホン酸、アダマンタンカルボン酸等の脂環式スルホン酸等が挙げられる。
中でも、入手性、製造適性の面から、トリフルオロメタンスルホン酸、p−トルエンスルホン酸、メタンスルホン酸が特に好ましい。
For example, 4-fluorophenylmethylsulfonic acid, 4-chlorophenylmethylsulfonic acid, 4-bromophenylmethylsulfonic acid, 4-iodophenylmethylsulfonic acid, tetrafluorophenylmethylsulfonic acid, tetrachlorophenylmethylsulfonic acid, tetrabromophenylmethyl Sulfonic acid, tetraiodophenylmethylsulfonic acid, 4-fluorophenylethylsulfonic acid, 4-chlorophenylethylsulfonic acid, 4-bromophenylethylsulfonic acid, 4-iodophenylethylsulfonic acid. 4-fluorophenylpropylsulfonic acid, 4-chlorophenylpropylsulfonic acid, 4-bromophenylpropylsulfonic acid, 4-iodophenylpropylsulfonic acid, 4-fluorophenylbutylsulfonic acid, 4-chlorophenylbutylsulfonic acid, 4-bromophenyl Halogenated aromatic aliphatic sulfonic acids such as butylsulfonic acid and 4-iodophenylbutylsulfonic acid, and alicyclic sulfonic acids such as camphorsulfonic acid and adamantanecarboxylic acid are exemplified.
Of these, trifluoromethanesulfonic acid, p-toluenesulfonic acid, and methanesulfonic acid are particularly preferable from the viewpoints of availability and production suitability.
上記(Z21)-表される残基を構成するカルボン酸化合物の具体例としては、例えば、ギ酸、酢酸、プロピオン酸、酪酸、イソ酪酸、吉草酸、イソ吉草酸、ピバル酸、ヘキサン酸、ヘプタン酸、オクタン酸、ノナン酸、デカン酸、ウンデカン酸、ラウリル酸、トリデカン酸、ミリスチン酸、ペンタデカン酸、パルミチン酸、ヘプタデカン酸、ステアリン酸、ノナデカン酸、イコサン酸、ヘンイコサン酸、ドコサン酸、トリコサン酸等の脂肪族不飽和カルボン酸、例えば、フルオロ酢酸、クロロ酢酸、ブロモ酢酸、ヨード酢酸、ジフルオロ酢酸、ジクロロ酢酸、ジブロモ酢酸、ジヨード酢酸、トリフルオロ酢酸、トリクロロ酢酸、トリブロモ酢酸、トリヨード酢酸、2−フルオロプロピオン酸、2−クロロプロピオン酸、2−ブロモプロピオン酸、2−ヨードプロピオン酸、トリフルオロプロピオン酸、トリクロロプロピオン酸、ペンタフルオロプロピオン酸、ペンタクロロプロピオン酸、ペンタブロモプロピオン酸、ペンタヨードプロピオン酸、2,2−ビス(トリフルオロメチル)プロピオン酸、2,2−ビス(トリクロロメチル)プロピオン酸、2,2−ビス(トリブロモメチル)プロピオン酸、2,2−ビス(トリヨードメチル)プロピオン酸、トリフルオロ酪酸.トリクロロ酪酸、ペンタフルオロ酪酸、ヘプタクロロ酪酸、ヘプタフルオロ酪酸、ヘプタブロモ酪酸、ヘプタヨード酪酸、ヘプタフルオロイソ酪酸、ヘプタクロロイソ酪酸、ヘプタブロモイソ酪酸、ヘプタヨードイソ路酸、トリフルオロ吉草酸、5H−パーフルオロ吉草酸、5H−パークロロ吉草酸、5H−パーブロモ吉草酸、5H−パーヨード吉草酸、ノナフルオロ吉草酸、ノナクロロ吉草酸、ノナブロモ吉草酸、ノナヨード吉草酸、トリフルオロヘキサン酸、トリクロロヘキサン酸、パーフルオロヘキサン酸、パークロロヘキサン酸、パーブロモヘキサン酸、パーヨードヘキサン酸、7−クロロドデカフルオロヘプタン酸、7−クロロドデカクロロヘプタン酸、7−クロロドデカブロモヘプタン酸、7−クロロドデカヨードヘプタン酸、トリフルオロヘプタン酸、トリクロロヘプタン酸、7H−パーフルオロヘプタン酸、7H−パークロロヘプタン酸、7H−パーブロモヘプタン酸、7H−パーヨードヘプタン酸、 Specific examples of the carboxylic acid compound constituting the residue represented by the above (Z 21 ) − include, for example, formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, valeric acid, isovaleric acid, pivalic acid, hexanoic acid, Heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, lauric acid, tridecanoic acid, myristic acid, pentadecanoic acid, palmitic acid, heptadecanoic acid, stearic acid, nonadecanoic acid, icosanoic acid, heicosanoic acid, docosanoic acid, tricosanoic acid Aliphatic unsaturated carboxylic acids such as fluoroacetic acid, chloroacetic acid, bromoacetic acid, iodoacetic acid, difluoroacetic acid, dichloroacetic acid, dibromoacetic acid, diiodoacetic acid, trifluoroacetic acid, trichloroacetic acid, tribromoacetic acid, triiodoacetic acid, 2- Fluoropropionic acid, 2-chloropropionic acid, 2-bromopropion 2-iodopropionic acid, trifluoropropionic acid, trichloropropionic acid, pentafluoropropionic acid, pentachloropropionic acid, pentabromopropionic acid, pentaiodopropionic acid, 2,2-bis (trifluoromethyl) propionic acid, 2 , 2-bis (trichloromethyl) propionic acid, 2,2-bis (tribromomethyl) propionic acid, 2,2-bis (triiodomethyl) propionic acid, trifluorobutyric acid. Trichlorobutyric acid, pentafluorobutyric acid, heptachlorobutyric acid, heptafluorobutyric acid, heptabromobutyric acid, heptaiodobutyric acid, heptafluoroisobutyric acid, heptachloroisobutyric acid, heptabromoisobutyric acid, heptaiodoisoway acid, trifluorovaleric acid, 5H-perfluorovaleric acid 5H-perchlorovaleric acid, 5H-perbromovaleric acid, 5H-periodovaleric acid, nonafluorovaleric acid, nonachlorovaleric acid, nonabromovaleric acid, nonaiodovaleric acid, trifluorohexanoic acid, trichlorohexanoic acid, perfluorohexanoic acid, perfluorohexanoic acid Chlorohexanoic acid, perbromohexanoic acid, periododohexanoic acid, 7-chlorododecafluoroheptanoic acid, 7-chlorododecachloroheptanoic acid, 7-chlorododecabromoheptanoic acid, 7-chlorododecaiodoheptanoic acid, Li fluoro heptanoic acid, trichloroacetic heptanoic acid, 7H-perfluoroheptanoic acid, 7H-perchlorethylene heptanoic acid, 7H-Per-bromo heptanoic acid, 7H-per-iodo-heptanoic acid,
トリフルオロオクタン酸、トリクロロオクタン酸、ペンタデカフルオロオクタン酸、ペンタデカクロロオクタン酸、ペンタデカブロモオクタン酸、ペンタデカヨードオクタン酸、トリフルオロノナン酸、トリクロロノナン酸、9H−ヘキサデカフルオロノナン酸、9H−ヘキサデカクロロノナン酸、9H−ヘキサデカブロモノナン酸、9H−ヘキサデカヨードノナン酸、パーフルオロノナン酸、パークロロノナン酸、パーブロモノナン酸、パーヨードノナン酸、トリフルオロデカン酸、トリクロロデカン酸、ノナデカフルオロデカン酸、ノナデカクロロデカン酸、ノナデカブロモデカン酸、ノナデカヨードデカン酸、トリフルオロウンデカン酸、トリクロロウンデカン酸、パーフルオロウンデカン酸、パークロロウンデカン酸、パーブロモヴンデカン酸、パーヨードウンデカン酸、トリフルオロドデカン酸、トリクロロドデカン酸、パーフルオロドデカン酸、パークロロドデカン酸、パーブロモドデカン酸、パーヨードドデカン酸、トリフルオロトリデカン酸、トリクロロトリデカン酸、パーフルオロトリデカン酸、パークロロトリデカン酸、パーブロモトリデカン酸.パーヨードトリデカン酸、トリフルオロテトラデカン酸、トリクロロテトラデカン酸、パーフルオロテトラデカン酸、パークロロテトラデカン酸、パーブロモテトラデカン酸、パーヨードテトラデカン酸、トリフルオロペンタデカン酸、トリクロロペンタデカン酸、パーフルオロペンタデカン酸、パークロロペンタデカン酸、パーブロモペンタデカン酸、パーヨードペンタデカン酸、パーフルオロヘキサデカン酸、パークロロヘキサデカン酸、パーブロモヘキサデカン酸、パーヨードヘキサデカン酸、パーフルオロヘプタデカン酸、パークロロヘプタデカン酸、パーブロモヘプタデカン酸、パーヨードヘプタデカン酸、パーフルオロオクタデカン酸、パークロロオクタデカン酸、パーブロモオクタデカン酸、パーヨードオクタデカン酸、パーフルオロノナデカン酸、パークロロノナデカン酸、パーブロモノナデカン酸、パーヨードノナデカン酸、パーフルオロイコサン酸、パークロロイコサン酸、パーブロモイコサン酸、パーヨードイコサン酸、パーフルオロヘンイコサン酸、パークロロヘンイコサン酸、パーブロモヘンイコサン酸、パーヨードヘンイコサン酸、パーフルオロドコサン酸、パークロロドコサン酸、パーブロモドコサン酸、パーヨードドコサン酸、パーフルオロトリコサン酸、パークロロトリコサン酸、パーブロモトリコサン酸、パーヨードトリコサン酸等のハロゲン化飽和脂肪酸力ルボン酸、 Trifluorooctanoic acid, trichlorooctanoic acid, pentadecafluorooctanoic acid, pentadecachlorooctanoic acid, pentadecabromooctanoic acid, pentadecaiodooctanoic acid, trifluorononanoic acid, trichlorononanoic acid, 9H-hexadecafluorononanoic acid, 9H-hexadecachlorononanoic acid, 9H-hexadecabromononanoic acid, 9H-hexadecaiodononanoic acid, perfluorononanoic acid, perchlorononanoic acid, perbromononanoic acid, periodononanoic acid, trifluorodecanoic acid, trichlorodecanoic acid , Nonadecafluorodecanoic acid, nonadecachlorodecanoic acid, nonadecabromodecanoic acid, nonadecanoiododecanoic acid, trifluoroundecanoic acid, trichloroundecanoic acid, perfluoroundecanoic acid, perchloroundecanoic acid, perbromo Decanoic acid, periodododecanoic acid, trifluorododecanoic acid, trichlorododecanoic acid, perfluorododecanoic acid, perchlorododecanoic acid, perbromododecanoic acid, periodododecanoic acid, trifluorotridecanoic acid, trichlorotridecanoic acid, perfluorotridecanoic acid Decanoic acid, perchlorotridecanoic acid, perbromotridecanoic acid. Periodotridecanoic acid, trifluorotetradecanoic acid, trichlorotetradecanoic acid, perfluorotetradecanoic acid, perchlorotetradecanoic acid, perbromotetradecanoic acid, periodotetradecanoic acid, trifluoropentadecanoic acid, trichloropentadecanoic acid, perfluoropentadecanoic acid, perfluoropentadecanoic acid Chloropentadecanoic acid, perbromopentadecanoic acid, periodopentadecanoic acid, perfluorohexadecanoic acid, perchlorohexadecanoic acid, perbromohexadecanoic acid, periodohexadecanoic acid, perfluoroheptadecanoic acid, perchloroheptadecanoic acid, perbromoheptadecane Acid, periododoheptadecanoic acid, perfluorooctadecanoic acid, perchlorooctadecanoic acid, perbromooctadecanoic acid, periodooctadecanoic acid, perper Luonoronadecanoic acid, perchlorononadecanoic acid, perbromononadecanoic acid, periodononadecanoic acid, perfluoroicosanoic acid, perchloroicosanoic acid, perbromoicosanoic acid, periodoicosanoic acid, perfluorohenicosane Acid, perchlorohenicosanoic acid, perbromohenicosanoic acid, periodohenicosanoic acid, perfluorodocosanoic acid, perchlorodocosanoic acid, perbromodocosanoic acid, periododocosanoic acid, perfluorotrico Halogenated saturated fatty acid strength rubonic acid such as sanic acid, perchlorotricosanoic acid, perbromotricosanoic acid, periodotricosanoic acid,
例えば、グリコール酸、乳酸、グリセリン酸、3−ヒドロキシ−2−メチルプロピオン酸等のヒドロキシ脂肪族カルボン酸、例えば、3−ヒドロキシ−2−(トリフルオロメチル)プロピオン酸、3−ヒドロキシ−2−(トリクロロメチル)プロピオン酸、3−ヒドロキシ−2−(トリブロモメチル)プロピオン酸、3−ヒドロキシ−2−(トリヨードメチル)プロピオン酸、2−ヒドロキシ−2−(トリフルオロメチル)酪酸、2−ヒドロキシ−2−(トリクロロメチル)路酸、2−ヒドロキシ−2−(トリブロモメチル)酪酸、2−ヒドロキシ−2−(トリヨードメチル)酪酸等のハロゲン化とドロキシ脂肪族カルボン酸、例えば、シクロヘキサンカルボン酸、樟脳酸、アダマンタン酸等の脂環式カルボン酸、例えば、4−フルオロシクロヘキサンカルボン酸、4−クロロシクロヘキサンカルボン酸、4−ブロモシクロヘキサンカルボン酸、4−ヨードシクロヘキサンカルボン酸、ペンタフルオロシクロヘキサンカルボン酸、ペンタクロロシクロヘキサンカルボン酸、ペンタブロモシクロヘキサンカルボン酸、ペンタヨードシクロヘキサンカルボン酸、4−(トリフルオロメチル)シクロヘキサンカルボン酸、4−(トリクロロメチル)シクロヘキサンカルボン酸、4−(トリブロモメチル)シクロヘキサンカルボン酸、4−(トリヨードメチル)シクロへキサンカルボン酸等のハロゲン化脂環式カルボン酸、 For example, hydroxy aliphatic carboxylic acids such as glycolic acid, lactic acid, glyceric acid, 3-hydroxy-2-methylpropionic acid, such as 3-hydroxy-2- (trifluoromethyl) propionic acid, 3-hydroxy-2- ( Trichloromethyl) propionic acid, 3-hydroxy-2- (tribromomethyl) propionic acid, 3-hydroxy-2- (triiodomethyl) propionic acid, 2-hydroxy-2- (trifluoromethyl) butyric acid, 2-hydroxy Halogenation and droxy aliphatic carboxylic acids such as 2- (trichloromethyl) pathic acid, 2-hydroxy-2- (tribromomethyl) butyric acid, 2-hydroxy-2- (triiodomethyl) butyric acid, such as cyclohexanecarboxylic acid Alicyclic carboxylic acids such as acid, camphoric acid, adamantanoic acid, for example 4-fluoro Hexanecarboxylic acid, 4-chlorocyclohexanecarboxylic acid, 4-bromocyclohexanecarboxylic acid, 4-iodocyclohexanecarboxylic acid, pentafluorocyclohexanecarboxylic acid, pentachlorocyclohexanecarboxylic acid, pentabromocyclohexanecarboxylic acid, pentaiodocyclohexanecarboxylic acid, 4 Halogenated alicyclic such as-(trifluoromethyl) cyclohexanecarboxylic acid, 4- (trichloromethyl) cyclohexanecarboxylic acid, 4- (tribromomethyl) cyclohexanecarboxylic acid, 4- (triiodomethyl) cyclohexanecarboxylic acid carboxylic acid,
例えば、安息香酸、ナフトエ酸、アントラセンカルボン酸、ピレンカルボン酸、ピリレンカルボン酸、ベンタフェンカルボン酸等の芳香族カルボン酸、例えば、フルオロ安息香酸、クロロ安息香酸、ブロモ安息香酸、ヨード安息香酸、ジフルオロ安息香酸、ジクロロ安息香酸、ジブロモ安息香酸、ジヨード安息香酸、トリフルオロ安息香酸、トリクロロ安息香酸、トリブロモ安息香酸、トリヨード安息香酸、テトラフルオロ安息香酸、テトラクロロ安息香酸、テトラブロモ安息香酸、テトラヨード安息香酸、ペンタフルオロ安息香酸、ペンタクロロ安息香酸、ペンタブロモ安息香酸、ベンタヨード安息香酸、フルオロナフトエ酸、クロロナフトエ酸、ブロモナフトエ酸、ヨードナフトエ酸、パーフルオロナフトエ酸、パークロロナフトエ酸、パーブロモナフトエ酸、パーヨードナフトエ酸、フルオロアントラセンカルボン酸、クロロアントラセンカルボン酸、ブロモアントンセンカルボン酸、ヨードアントラセンカルボン酸、パーフルオロアントラセン力ルボン酸、パークロロアントラセン力ルボン酸、パーブロモアントラセンカルボン酸、パーヨードアントラセンカルボン酸等のハロゲン化芳香族カルボン酸、ベンゾイル蟻酸、 For example, aromatic carboxylic acids such as benzoic acid, naphthoic acid, anthracene carboxylic acid, pyrene carboxylic acid, pyrylene carboxylic acid, bentaphene carboxylic acid, such as fluorobenzoic acid, chlorobenzoic acid, bromobenzoic acid, iodobenzoic acid, Difluorobenzoic acid, dichlorobenzoic acid, dibromobenzoic acid, diiodobenzoic acid, trifluorobenzoic acid, trichlorobenzoic acid, tribromobenzoic acid, triiodobenzoic acid, tetrafluorobenzoic acid, tetrachlorobenzoic acid, tetrabromobenzoic acid, tetraiodobenzoic acid , Pentafluorobenzoic acid, pentachlorobenzoic acid, pentabromobenzoic acid, bentaiodobenzoic acid, fluoronaphthoic acid, chloronaphthoic acid, bromonaphthoic acid, iodonaphthoic acid, perfluoronaphthoic acid, perchloronaphthoic acid, -Bromonaphthoic acid, periodonaphthoic acid, fluoroanthracene carboxylic acid, chloroanthracene carboxylic acid, bromoanthanthene carboxylic acid, iodoanthracene carboxylic acid, perfluoroanthracene carboxylic acid, perchloroanthracene carboxylic acid, perbromoanthracene carboxylic acid, perbromo Halogenated aromatic carboxylic acids such as iodoanthracene carboxylic acid, benzoyl formic acid,
例えば、トルイル酸、2,4,6−トリ(イソプロピル)安息香酸等のアルキル芳香族カルボン酸、例えば、2−トリフルオロメチル安息香酸、2−トリクロロメチル安息番酸、2−トリブロモメチル安息香酸、2−トリヨードメチル安息香酸、3−トリフルオロメチル安息香酸、3−トリクロロメチル安息香酸、3−トリブロモメチル安息香酸、3−トリヨードメチル安息香酸、4−トリフルオロメチル安息香酸、4−トリクロロメチル安息香酸、4−トリブロモメチル安息香酸、4−トリヨードメチル安息香酸、2−フルオロ−4−(トリフルオロメチル)安息香酸、2−クロロ−4−(トリクロロメチル)安息香酸、2−ブロモ−4−(トリブロモメチル)安息香酸、2,3,4−トリフルオロ−6−(トリフルオロメチル)安息香酸、2,3,4−トリクロロ−6−(トリクロロメチル)安息香酸、2,3,4−トリブロモ−6−(トリブロモメチル)安息香酸、2,3,4−トリヨード−6−(トリヨードメチル)安息香酸、2−ヨード−4−(トリヨードメチル)安息香酸、2,4−ビス(トリフルオロメチル)安息香酸、2,4−ビス(トリクロロメチル)安息香酸、2,4−ビス(トリブロモメチル)安息香酸、2,4−ビス(トリヨードメチル)安息香酸、2,6−ビス(トリフルオロメチル)安息香酸、2,6−ビス(トリクロロメチル)安息香酸、2,6−ビス(トリブロモメチル)安息香酸、2,6−ビス(トリヨードメチル)安息香酸、3,5−ビス(トリフルオロメチル)安息香酸、3,5−ビス(トリクロロメチル)安息香酸、3,5−ビス(トリブロモメチル)安息香酸、3,5−ビス(トリヨードメチル)安息香酸、2,4,6−トリス(トリフルオロメチル)安息香酸、2,4,6−トリス(トリクロロメチル)安息香酸、2,4,6−トリス(トリブロモメチル)安息香酸、2,4,6−トリス(トリヨードメチル)安息香酸、2−クロロ−6−フルオロ−3−メチル安息香酸、トリフルオロメチルナフトエ酸、トリクロロメチルナフトエ酸、トリブロモメチルナフトエ酸、トリヨードメチルナフトエ酸、 For example, alkylaromatic carboxylic acids such as toluic acid and 2,4,6-tri (isopropyl) benzoic acid, such as 2-trifluoromethylbenzoic acid, 2-trichloromethylbenzoic acid, 2-tribromomethylbenzoic acid 2-triiodomethylbenzoic acid, 3-trifluoromethylbenzoic acid, 3-trichloromethylbenzoic acid, 3-tribromomethylbenzoic acid, 3-triiodomethylbenzoic acid, 4-trifluoromethylbenzoic acid, 4- Trichloromethylbenzoic acid, 4-tribromomethylbenzoic acid, 4-triiodomethylbenzoic acid, 2-fluoro-4- (trifluoromethyl) benzoic acid, 2-chloro-4- (trichloromethyl) benzoic acid, 2- Bromo-4- (tribromomethyl) benzoic acid, 2,3,4-trifluoro-6- (trifluoromethyl) benzoic acid 2,3,4-trichloro-6- (trichloromethyl) benzoic acid, 2,3,4-tribromo-6- (tribromomethyl) benzoic acid, 2,3,4-triiodo-6- (triiodomethyl) Benzoic acid, 2-iodo-4- (triiodomethyl) benzoic acid, 2,4-bis (trifluoromethyl) benzoic acid, 2,4-bis (trichloromethyl) benzoic acid, 2,4-bis (tribromo) Methyl) benzoic acid, 2,4-bis (triiodomethyl) benzoic acid, 2,6-bis (trifluoromethyl) benzoic acid, 2,6-bis (trichloromethyl) benzoic acid, 2,6-bis (tri Bromomethyl) benzoic acid, 2,6-bis (triiodomethyl) benzoic acid, 3,5-bis (trifluoromethyl) benzoic acid, 3,5-bis (trichloromethyl) benzoic acid, 3,5-bis ( bird Lomomethyl) benzoic acid, 3,5-bis (triiodomethyl) benzoic acid, 2,4,6-tris (trifluoromethyl) benzoic acid, 2,4,6-tris (trichloromethyl) benzoic acid, 2,4 , 6-Tris (tribromomethyl) benzoic acid, 2,4,6-tris (triiodomethyl) benzoic acid, 2-chloro-6-fluoro-3-methylbenzoic acid, trifluoromethylnaphthoic acid, trichloromethylnaphthoate Acid, tribromomethyl naphthoic acid, triiodomethyl naphthoic acid,
ビス(トリフルオロメチル)ナフトエ酸、ビス(トリクロロメチル)ナフトエ酸、ビス(トリブロモメチル)ナフトエ酸、ビス(トリヨードメチル)ナフトエ酸、トリス(トリフルオロメチル)ナフトエ酸、トリス(トリクロロメチル)ナフトエ酸、トリス(トリブロモメチル)ナフトエ酸、トリス(トリヨードメチル)ナフトエ酸、トリフルオロメチルアントンセンカルボン酸、トリクロロメチルアントンセンカルボン酸、トリブロモメチルアントラセンカルボン酸、トリヨードメチルアントラセンカルボン酸等のハロアルキル芳香族カルボン酸、例えば、アニス酸、ベルトラム酸、o−ベルトラム酸等のアルコキシ芳香族カルボン酸、例えば、4−トリフルオロメトキシ安息香酸、4−トリクロロメトキシ安息香酸、4−トリブロモメトキシ安息香酸、4−トリヨードメトキシ安息香酸、4−ペンタフルオロエトキシ安息香酸、4−ペンタクロロエトキシ安息香酸、4−ペンタブロモエトキシ安息香酸、4−ベンタヨードエトキシ安息香酸、3,4−ビス(トリフルオロメトキシ)安息香酸、3,4−ビス(トリクロロメトキシ)安息香酸、3,4−ビス(トリブロモメトキシ)安息香酸、3,4−ビス(トリヨードメトキシ)安息香酸、2,5−ビス(2,2,2−トリフルオロエトキシ)安息香酸、2,5−ビス(2,2,2−トリクロロエトキシ)安息香酸、2,5−ビス(2,2,2−トリブロモエトキシ)安息香酸、2,5−ビス(2,2,2−トリヨードエトキシ)安息香酸等のハロアルコキシ芳香族カルボン酸、例えば、サリチル酸、o−ピロカテク酸、α−レゾルシル酸、ゲンチジン酸、α−レゾルシル酸、プロトカテク酸、α−レゾルシル酸、没食子酸等のヒドロキシ芳香族カルボン酸、例えば、バニリン酸、イソバニリン酸等のヒドロキシアルコキシ芳香族カルボン酸、例えば、トリニトロ安息香酸等のエトロ芳香族カルボン酸、例えば、アントラニル酸等のアミノ芳香族カルボン酸、例えば、α−トルイル酸、ヒドロ桂皮酸、ヒドロアトロパ酸、3−フェニルプロピオン酸、4−フェニル酪酸、5−フェニルペンタン酸、6−フェニルヘキサン酸、7−フェニルヘプタン酸、6−(2−ナフチル)ヘキサン酸等の芳香脂肪族カルボン酸、例えば、ホモゲンチジン酸等のヒドロキシ芳香脂肪族カルボン酸、例えば、マンデル酸、ベンジル酸、アトロラクチン酸、トロパ酸、アトログリセリン酸等の方香族ヒドロキシアルキルカルボン酸、例えば、2−ホルミル酢酸、アセト酢酸、3−ベンゾイルプロピオン酸等、4−ホルミル酪酸、3−オキソ吉草酸、5−オキソ吉草酸、3,5−ジオキソ吉草酸、6−ホルミルヘキサンカルボン酸、2−オキソ−1−シクロヘキサンカルボン酸、4−(2−オキソブチル)安息香酸、p−(3−ホルミルプロピル)安息香酸、4−ホルミルフェニル酢酸、β−オキソシクロヘキサンプロピオン酸、ピルビン酸等のオキソカルボン酸が挙げられる。
中でも、ベンゾイル蟻酸、酢酸、安息香酸が特に好ましい。
Bis (trifluoromethyl) naphthoic acid, bis (trichloromethyl) naphthoic acid, bis (tribromomethyl) naphthoic acid, bis (triiodomethyl) naphthoic acid, tris (trifluoromethyl) naphthoic acid, tris (trichloromethyl) naphthoic acid Acids, tris (tribromomethyl) naphthoic acid, tris (triiodomethyl) naphthoic acid, trifluoromethylanthone carboxylic acid, trichloromethyl anthracene carboxylic acid, tribromomethylanthracene carboxylic acid, triiodomethylanthracene carboxylic acid, etc. Haloalkyl aromatic carboxylic acids, for example, alkoxy aromatic carboxylic acids such as anisic acid, beltramic acid, o-bertramic acid, such as 4-trifluoromethoxybenzoic acid, 4-trichloromethoxybenzoic acid, 4-tribromometh Cibenzoic acid, 4-triiodomethoxybenzoic acid, 4-pentafluoroethoxybenzoic acid, 4-pentachloroethoxybenzoic acid, 4-pentabromoethoxybenzoic acid, 4-pentaiodoethoxybenzoic acid, 3,4-bis ( Trifluoromethoxy) benzoic acid, 3,4-bis (trichloromethoxy) benzoic acid, 3,4-bis (tribromomethoxy) benzoic acid, 3,4-bis (triiodomethoxy) benzoic acid, 2,5-bis (2,2,2-trifluoroethoxy) benzoic acid, 2,5-bis (2,2,2-trichloroethoxy) benzoic acid, 2,5-bis (2,2,2-tribromoethoxy) benzoic acid Haloalkoxyaromatic carboxylic acids such as 2,5-bis (2,2,2-triiodoethoxy) benzoic acid, such as salicylic acid, o-pyrocatechuic acid, α-reso Hydroxy aromatic carboxylic acids such as lucylic acid, gentisic acid, α-resorcylic acid, protocatechuic acid, α-resorcylic acid, gallic acid, for example, hydroxyalkoxy aromatic carboxylic acids such as vanillic acid, isovanillic acid, for example, trinitrobenzoic acid Etroaromatic carboxylic acids such as, for example, amino aromatic carboxylic acids such as anthranilic acid, such as α-toluic acid, hydrocinnamic acid, hydroatropic acid, 3-phenylpropionic acid, 4-phenylbutyric acid, 5-phenylpentanoic acid Araliphatic carboxylic acids such as 6-phenylhexanoic acid, 7-phenylheptanoic acid, 6- (2-naphthyl) hexanoic acid, for example, hydroxyaromatic carboxylic acids such as homogentisic acid, such as mandelic acid, benzylic acid , Atrolactic acid, tropic acid, atroglyceric acid, etc. Group hydroxyalkylcarboxylic acids such as 2-formylacetic acid, acetoacetic acid, 3-benzoylpropionic acid, 4-formylbutyric acid, 3-oxovaleric acid, 5-oxovaleric acid, 3,5-dioxovaleric acid, 6- Formylhexanecarboxylic acid, 2-oxo-1-cyclohexanecarboxylic acid, 4- (2-oxobutyl) benzoic acid, p- (3-formylpropyl) benzoic acid, 4-formylphenylacetic acid, β-oxocyclohexanepropionic acid, pyruvin Examples include oxocarboxylic acids such as acids.
Among these, benzoyl formic acid, acetic acid, and benzoic acid are particularly preferable.
本発明において、好適に用いることのできる一般式(II)で示されるスルホニウム塩の具体例〔例示化合物(66)〜(78)、(83)〜(89)、(94)及び(101)〕を以下に挙げるが、本発明はこれに制限されるものではない。 Specific examples of the sulfonium salt represented by the general formula (II) that can be suitably used in the present invention [Exemplary compounds (66) to (78), (83) to (89), (94) and (101)] However, the present invention is not limited to this.
本発明において用いられる前記一般式(II)で表されるスルホニウム塩は、極大吸収波長が400nm以下であることが好ましく、さらに360nm以下であることが好ましい。このように吸収波長を紫外線領域にすることにより、画像記録材料の取り扱いを白灯下で実施することができる。 The sulfonium salt represented by the general formula (II) used in the present invention preferably has a maximum absorption wavelength of 400 nm or less, and more preferably 360 nm or less. By setting the absorption wavelength in the ultraviolet region in this way, the image recording material can be handled under white light.
前記一般式(II)で表されるスルホニウム塩化合物は、1種のみを用いても良いし、2種以上を併用しても良い。また、これらのスルホニウム塩は他の成分と同一の層に添加してもよいし、別の層を設けそこへ添加してもよい。
本発明に好ましく用いられる前記一般式(II)で表されるスルホニウム塩としては、カウンターアニオンがスルホン酸アニオン又はカルボン酸アニオンのものが挙げられる。
これらのスルホニウム塩は、感度と非画像部の汚れ性の観点から、ポジ型画像記録層全固形分に対し0.1〜50重量%、好ましくは0.5〜40重量%、特に好ましくは1〜30重量%の割合で添加することができる。
The sulfonium salt compound represented by the general formula (II) may be used alone or in combination of two or more. Moreover, these sulfonium salts may be added to the same layer as other components, or another layer may be provided and added thereto.
Examples of the sulfonium salt represented by the general formula (II) preferably used in the present invention include those in which the counter anion is a sulfonate anion or a carboxylate anion.
These sulfonium salts are 0.1 to 50% by weight, preferably 0.5 to 40% by weight, particularly preferably 1%, based on the total solid content of the positive type image recording layer, from the viewpoint of sensitivity and soiling property of the non-image area. It can be added at a ratio of ˜30% by weight.
[(B)光熱変換剤]
本発明に係る画像形成層は(B)光熱変換剤を含有する。
本発明に用いられる(B)光熱変換剤としては、記録に使用する光エネルギー照射線を吸収し、熱を発生する物質であれば特に吸収波長域の制限はなく用いることができるが、入手容易な高出力レーザーへの適合性の観点からは、波長760nmから1200nmに吸収極大を有する赤外線吸収性染料又は顔料が好ましく挙げられる。
[(B) Photothermal conversion agent]
The image forming layer according to the present invention contains (B) a photothermal conversion agent.
The (B) photothermal conversion agent used in the present invention is not particularly limited as long as it is a substance that absorbs light energy irradiation rays used for recording and generates heat, but it can be used without limitation. From the viewpoint of compatibility with a high-power laser, an infrared-absorbing dye or pigment having an absorption maximum at a wavelength of 760 nm to 1200 nm is preferable.
〔赤外線吸収性染料又は顔料〕
染料としては、市販の染料及び例えば「染料便覧」(有機合成化学協会編集、昭和45年刊)等の文献に記載されている公知のものが利用できる。具体的には、アゾ染料、金属錯塩アゾ染料、ピラゾロンアゾ染料、ナフトキノン染料、アントラキノン染料、フタロシアニン染料、ナフタロシアニン染料、カルボニウム染料、キノンイミン染料、メチン染料、シアニン染料、スクアリリウム色素、(チオ)ピリリウム塩、金属チオレート錯体、インドアニリン金属錯体系染料、オキソノール染料、ジイモニウム染料、アミニウム染料、クロコニウム染料、分子間CT色素等の染料が挙げられる。
[Infrared absorbing dye or pigment]
As the dye, commercially available dyes and known dyes described in documents such as “Dye Handbook” (edited by the Society for Synthetic Organic Chemistry, published in 1970) can be used. Specifically, azo dyes, metal complex azo dyes, pyrazolone azo dyes, naphthoquinone dyes, anthraquinone dyes, phthalocyanine dyes, naphthalocyanine dyes, carbonium dyes, quinoneimine dyes, methine dyes, cyanine dyes, squarylium dyes, (thio) pyrylium salts And dyes such as metal thiolate complexes, indoaniline metal complex dyes, oxonol dyes, diimonium dyes, aminium dyes, croconium dyes, and intermolecular CT dyes.
好ましい染料としては、例えば、特開昭58−125246号公報、特開昭59−84356号公報、特開昭59−202829号公報、特開昭60−78787号公報等に記載されているシアニン染料、
特開昭58−173696号公報、特開昭58−181690号公報、特開昭58−194595号公報等に記載されているメチン染料、
特開昭58−112793号公報、特開昭58−224793号公報、特開昭59−48187号公報、特開昭59−73996号公報、特開昭60−52940号公報、特開昭60−63744号公報等に記載されているナフトキノン染料、
特開昭58−112792号公報等に記載されているスクアリリウム色素、
英国特許434,875号明細書に記載のシアニン染料、
等を挙げることができる。
Examples of preferable dyes include cyanine dyes described in, for example, JP-A-58-125246, JP-A-59-84356, JP-A-59-202829, JP-A-60-78787, and the like. ,
Methine dyes described in JP-A-58-173696, JP-A-58-181690, JP-A-58-194595,
JP-A-58-112793, JP-A-58-224793, JP-A-59-48187, JP-A-59-73996, JP-A-60-52940, JP-A-60- Naphthoquinone dyes described in Japanese Patent No. 63744
Squarylium dyes described in JP-A-58-112792, etc.,
Cyanine dyes described in British Patent 434,875,
Etc.
また、米国特許第5,156,938号明細書に記載の近赤外吸収増感剤も好適に用いられ、また、米国特許第3,881,924号明細書に記載の置換されたアリールベンゾ(チオ)ピリリウム塩、特開昭57−142645号公報(米国特許第4,327,169号明細書)記載のトリメチンチアピリリウム塩、特開昭58−181051号公報、同58−220143号公報、同59−41363号公報、同59−84248号公報、同59−84249号公報、同59−146063号公報、同59−146061号公報に記載されているピリリウム系化合物、特開昭59−216146号公報に記載のシアニン色素、米国特許第4,283,475号明細書に記載のペンタメチンチオピリリウム塩等や特公平5−13514号公報、同5−19702号公報に開示されているピリリウム化合物も好ましく用いられる。 Further, near infrared absorption sensitizers described in US Pat. No. 5,156,938 are also preferably used, and substituted aryl benzoates described in US Pat. No. 3,881,924 are also preferably used. (Thio) pyrylium salt, trimethine thiapyrylium salt described in JP-A-57-142645 (US Pat. No. 4,327,169), JP-A-58-181051, JP-A-58-220143 No. 59-41363, No. 59-84248, No. 59-84249, No. 59-146063, No. 59-146061, JP-A 59-216146 Cyanine dyes described in US Pat. No. 4,283,475, pentamethine thiopyrylium salt described in US Pat. No. 4,283,475, etc. Pyrylium compounds disclosed in JP same 5-19702 are also preferably used.
また、染料として好ましい別の例として、米国特許第4,756,993号明細書中に式(I)、(II)として記載されている近赤外吸収染料を挙げることができる。 Moreover, as another example preferable as a dye, the near-infrared absorptive dye described as the formula (I) and (II) in US Patent 4,756,993 can be mentioned.
これらの染料のうち特に好ましいものとしては、シアニン色素、フタロシアニン染料、オキソノール染料、スクアリリウム色素、ピリリウム塩、チオピリリウム染料、ニッケルチオレート錯体が挙げられる。 Particularly preferred among these dyes are cyanine dyes, phthalocyanine dyes, oxonol dyes, squarylium dyes, pyrylium salts, thiopyrylium dyes, and nickel thiolate complexes.
さらに、下記一般式(a)〜一般式(f)で示される染料が光熱変換効率に優れるため好ましく、特に、下記一般式(a)で示されるシアニン色素は、本発明において使用した場合に、アルカリ溶解性樹脂との高い相互作用を与え、かつ、安定性、経済性に優れるため最も好ましい。 Furthermore, the dyes represented by the following general formulas (a) to (f) are preferable because of excellent photothermal conversion efficiency, and in particular, the cyanine dye represented by the following general formula (a) is used in the present invention. It is most preferable because it gives high interaction with the alkali-soluble resin and is excellent in stability and economy.
一般式(a)中、R1及びR2は、各々独立に炭素原子数1〜12のアルキル基を表し、アルキル基上にはアルコキシ基、アリール基、アミド基、アルコキシカルボニル基、水酸基、スルホ基、カルボキシル基より選択される置換基を有してもよい。Y1及びY2は、各々独立に酸素、硫黄、セレン、ジアルキルメチレン基又は−CH=CH−を表す。Ar1及びAr2は、各々独立に芳香族炭化水素基を表し、アルキル基、アルコキシ基、ハロゲン原子、アルコキシカルボニル基より選択される置換基を有してもよく、Y1及びY2と隣接した連続2炭素原子で芳香環を縮環してもよい。 In general formula (a), R 1 and R 2 each independently represents an alkyl group having 1 to 12 carbon atoms, and an alkoxy group, an aryl group, an amide group, an alkoxycarbonyl group, a hydroxyl group, sulfo group on the alkyl group. The substituent may be selected from a group and a carboxyl group. Y 1 and Y 2 each independently represent oxygen, sulfur, selenium, a dialkylmethylene group or —CH═CH—. Ar 1 and Ar 2 each independently represent an aromatic hydrocarbon group, which may have a substituent selected from an alkyl group, an alkoxy group, a halogen atom, and an alkoxycarbonyl group, and is adjacent to Y 1 and Y 2 The aromatic ring may be condensed with two consecutive carbon atoms.
一般式(a)中、Xは、電荷の中和に必要なカウンターイオンを表し、色素カチオン部がアニオン性の置換基を有し、電荷の中和が必要ない場合は必ずしも必要ではない。Qは、トリメチン基、ペンタメチン基、ヘプタメチン基、ノナメチン基又はウンデカメチン基より選択されるポリメチン基を表し、露光に用いる赤外線に対する波長適性と安定性の点からペンタメチン基、ヘプタメチン基又はノナメチン基が好ましく、いずれかの炭素上に連続した3つのメチン鎖を含むシクロヘキセン環又はシクロペンテン環を有することが安定性の点で好ましい。 In general formula (a), X represents a counter ion necessary for charge neutralization, and is not always necessary when the dye cation has an anionic substituent and charge neutralization is not necessary. Q represents a polymethine group selected from a trimethine group, a pentamethine group, a heptamethine group, a nonamethine group or an undecamethine group, and is preferably a pentamethine group, a heptamethine group or a nonamethine group from the viewpoint of wavelength suitability and stability for infrared rays used for exposure. It is preferable in terms of stability to have a cyclohexene ring or a cyclopentene ring containing three consecutive methine chains on any carbon.
一般式(a)中、Qは、アルコキシ基、アリールオキシ基、アルキルチオ基、アリールチオ基、ジアルキルアミノ基、ジアリールアミノ基、ハロゲン原子、アルキル基、アラルキル基、シクロアルキル基、アリール基、オキシ基、イミニウム塩基、下記一般式(2)で表される置換基より選択される基で置換されていてもよく、好ましい置換基としては塩素原子等のハロゲン原子、ジフェニルアミノ基等のジアリールアミノ基、フェニルチオ基等のアリールチオ基が挙げられる。 In general formula (a), Q is an alkoxy group, aryloxy group, alkylthio group, arylthio group, dialkylamino group, diarylamino group, halogen atom, alkyl group, aralkyl group, cycloalkyl group, aryl group, oxy group, It may be substituted with an iminium base, a group selected from substituents represented by the following general formula (2). Preferred substituents include halogen atoms such as chlorine atoms, diarylamino groups such as diphenylamino groups, phenylthio And arylthio groups such as groups.
一般式(2)中、R3及びR4は、それぞれ独立に、水素原子、炭素数1〜8のアルキル基、又は炭素数6〜10のアリール基を表す。Y3は、酸素原子又は硫黄原子を表す。 In General Formula (2), R 3 and R 4 each independently represent a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or an aryl group having 6 to 10 carbon atoms. Y 3 represents an oxygen atom or a sulfur atom.
一般式(a)で示されるシアニン色素のうち、波長800〜840nmの赤外線で露光する場合は、特に好ましいものとしては下記一般式(a−1)〜(a−4)で示されるヘプタメチンシアニン色素を挙げることができる。 Of the cyanine dyes represented by the general formula (a), heptamethine cyanine represented by the following general formulas (a-1) to (a-4) is particularly preferable when exposed to infrared rays having a wavelength of 800 to 840 nm. Mention may be made of pigments.
一般式(a−1)中、X1は、水素原子又はハロゲン原子を表す。R1及びR2は、それぞれ独立に、炭素原子数1〜12の炭化水素基を示す。画像形成層塗布液の保存安定性からは、R1及びR2は、炭素原子数2個以上の炭化水素基であることが好ましく、さらに、R1とR2とは互いに結合し、5員環又は6員環を形成していることが特に好ましい。 In general formula (a-1), X 1 represents a hydrogen atom or a halogen atom. R 1 and R 2 each independently represents a hydrocarbon group having 1 to 12 carbon atoms. From the storage stability of the image-forming layer coating solution, R 1 and R 2 are preferably hydrocarbon groups having 2 or more carbon atoms, and R 1 and R 2 are bonded to each other to form a 5-membered It is particularly preferable that a ring or a 6-membered ring is formed.
一般式(a−1)中、Ar1及Ar2は、それぞれ同じでも異なっていてもよく、置換基を有していてもよい芳香族炭化水素基を示す。好ましい芳香族炭化水素基としては、ベンゼン環及びナフタレン環が挙げられる。また、好ましい置換基としては、炭素原子数12個以下の炭化水素基、ハロゲン原子、炭素原子数12個以下のアルコキシ基が挙げられる。Y1及びY2は、それぞれ同じでも異なっていてもよく、硫黄原子又は炭素原子数12個以下のジアルキルメチレン基を示す。R3及びR4は、それぞれ同じでも異なっていてもよく、置換基を有していてもよい炭素原子数20個以下の炭化水素基を示す。好ましい置換基としては、炭素原子数12個以下のアルコキシ基、カルボキシル基、スルホ基が挙げられる。R5、R6、R7及びR8は、それぞれ同じでも異なっていてもよく、水素原子又は炭素原子数12個以下の炭化水素基を示す。原料の入手性から、好ましくは水素原子である。また、Za-は、電荷の中和に必要な対アニオンを示し、この色素がその構造内にアニオン性の置換基を有し、電荷の中和が必要ない場合には、Za-は必要ない。好ましいZa-は、記録層塗布液の保存安定性から、ハロゲンイオン、過塩素酸イオン、テトラフルオロボレートイオン、ヘキサフルオロホスフェートイオン、及びスルホン酸イオンであり、特に好ましくは、過塩素酸イオン、テトラフルオロボレートイオン、ヘキサフルオロフォスフェートイオン、及びスルホン酸イオンである。上記一般式(a−1)で示されるヘプタメチン色素は、ポジ型の画像形成材料に好適に用いることができ、特にフェノール性水酸基を有するアルカリ可溶性樹脂と組み合わせたいわゆる相互作用解除型のポジ感材に好ましく用いられる。 In general formula (a-1), Ar 1 and Ar 2 may be the same or different, and each represents an aromatic hydrocarbon group that may have a substituent. Preferred aromatic hydrocarbon groups include a benzene ring and a naphthalene ring. Moreover, as a preferable substituent, a C12 or less hydrocarbon group, a halogen atom, and a C12 or less alkoxy group are mentioned. Y 1 and Y 2 may be the same or different and each represents a sulfur atom or a dialkylmethylene group having 12 or less carbon atoms. R 3 and R 4 may be the same or different and each represents a hydrocarbon group having 20 or less carbon atoms which may have a substituent. Preferred substituents include alkoxy groups having 12 or less carbon atoms, carboxyl groups, and sulfo groups. R 5 , R 6 , R 7 and R 8 may be the same or different and each represents a hydrogen atom or a hydrocarbon group having 12 or less carbon atoms. From the availability of raw materials, a hydrogen atom is preferred. Za − represents a counter anion necessary for charge neutralization, and Za − is not necessary when the dye has an anionic substituent in its structure and charge neutralization is not necessary. . Preferred Za − is a halogen ion, a perchlorate ion, a tetrafluoroborate ion, a hexafluorophosphate ion, and a sulfonate ion, particularly preferably a perchlorate ion, a tetrachlorate ion, in view of the storage stability of the recording layer coating solution. Fluoroborate ion, hexafluorophosphate ion, and sulfonate ion. The heptamethine dye represented by the general formula (a-1) can be suitably used for a positive type image forming material, and in particular, a so-called interaction release type positive photosensitive material combined with an alkali-soluble resin having a phenolic hydroxyl group. Is preferably used.
一般式(a−2)中、Rl及びR2は、それぞれ独立に、水素原子又は炭素原子数1〜12の炭化水素基を示し、RlとR2とは互いに結合し環構造を形成していてもよく、形成する環としては5員環又は6員環が好ましく、5員環が特に好ましい。Arl及びAr2は、それぞれ同じでも異なっていてもよく、置換基を有していてもよい芳香族炭化水素基を示す。好ましい芳香族炭化水素基としては、ベンゼン環及びナフタレン環が挙げられる。また、該芳香族炭化水素基上の好ましい置換基としては、炭素原子数12個以下の炭化水素基、ハロゲン原子、炭素原子数12個以下のアルコキシ基、アルコキシカルボニル基、アルキルスルホニル基、ハロゲン化アルキル基等が挙げられ、電子求引性の置換基が特に好ましい。Yl及びY2は、それぞれ同じでも異なっていてもよく、硫黄原子又は炭素原子数12個以下のジアルキルメチレン基を示す。R3及びR4は、それぞれ同じでも異なっていてもよく、置換基を有していてもよい炭素原子数20個以下の炭化水素基を示す。好ましい置換基としては、炭素原子数12個以下のアルコキシ基、カルボキシル基、スルホ基が挙げられる。R5、R6、R7及びR8は、それぞれ同じでも異なっていてもよく、水素原子又は炭素原子数12個以下の炭化水素基を示す。原料の入手性から、好ましくは水素原子である。R9及びR10は、それぞれ同じでも異なっていてもよく、置換基を有していてもよい炭素原子数6〜10の芳香族炭化水素基、炭素原子数1〜8のアルキル基、水素原子又はR9とR10とが互いに結合し下記構造の環を形成してもよい。 In general formula (a-2), R 1 and R 2 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms, and R 1 and R 2 are bonded to each other to form a ring structure. The ring to be formed is preferably a 5-membered ring or a 6-membered ring, and a 5-membered ring is particularly preferable. Ar 1 and Ar 2 may be the same or different and each represents an aromatic hydrocarbon group which may have a substituent. Preferred aromatic hydrocarbon groups include a benzene ring and a naphthalene ring. Preferred substituents on the aromatic hydrocarbon group include hydrocarbon groups having 12 or less carbon atoms, halogen atoms, alkoxy groups having 12 or less carbon atoms, alkoxycarbonyl groups, alkylsulfonyl groups, and halogenated groups. An alkyl group etc. are mentioned, An electron withdrawing substituent is especially preferable. Y 1 and Y 2 may be the same or different and each represents a sulfur atom or a dialkylmethylene group having 12 or less carbon atoms. R 3 and R 4 may be the same or different and each represents a hydrocarbon group having 20 or less carbon atoms which may have a substituent. Preferred substituents include alkoxy groups having 12 or less carbon atoms, carboxyl groups, and sulfo groups. R 5 , R 6 , R 7 and R 8 may be the same or different and each represents a hydrogen atom or a hydrocarbon group having 12 or less carbon atoms. From the availability of raw materials, a hydrogen atom is preferred. R 9 and R 10 may be the same or different and each may have a substituent, an aromatic hydrocarbon group having 6 to 10 carbon atoms, an alkyl group having 1 to 8 carbon atoms, a hydrogen atom Alternatively, R 9 and R 10 may be bonded to each other to form a ring having the following structure.
一般式(a−2)中のR9及びR10としては、上記のうち、フェニル基等の芳香族炭化水素基が最も好ましい。
また、X-は、電荷の中和に必要な対アニオンであり、前記一般式(a−1)におけるZa-と同様の定義である。
As R < 9 > and R < 10 > in general formula (a-2), aromatic hydrocarbon groups, such as a phenyl group, are the most preferable among the above.
X − is a counter anion necessary for charge neutralization and has the same definition as Za − in the general formula (a-1).
一般式(a−3)中、Rl〜R8、Arl、Ar2、Yl、Y2及びX-は、それぞれ前記一般式(a−2)におけるものと同義である。Ar3は、フェニル基、ナフチル基等の芳香族炭化水素基、又は窒素、酸素及び硫黄原子のうち少なくとも1つを含有する単環又は多環の複素球基を示し、チアゾール系、ベンゾチアゾール系、ナフトチアゾール系、チアナフテノ−7,6,4,5−チアゾール系、オキサゾール系、ベンゾオキサゾール系、ナフトオキサゾール系、セレナゾール系、ベンゾセレナゾール系、ナフトセレナゾール系、チアゾリン系、2−キノリン系、4−キノリン系、1−イソキノリン系、3−イソキノリン系、ベンゾイミダゾール系、3,3−ジアルキルベンゾインドレニン系、2−ピリジン系、4−ピリジン系、3,3−ジアルキルベンゾ[e]インドール系、テトラゾール系、トリアゾール系、ピリミジン系、及びチアジアゾール系よりなる群から選択される複素環基が好ましく、特に好ましい複素環基としては下記構造のものが挙げられる。 In general formula (a-3), R 1 to R 8 , Ar 1 , Ar 2 , Y 1 , Y 2 and X − have the same meanings as those in general formula (a-2). Ar 3 represents an aromatic hydrocarbon group such as a phenyl group or a naphthyl group, or a monocyclic or polycyclic heterosphere group containing at least one of nitrogen, oxygen, and sulfur atoms, and is a thiazole type, a benzothiazole type Naphthothiazole, thianaphtheno-7,6,4,5-thiazole, oxazole, benzoxazole, naphthoxazole, selenazole, benzoselenazole, naphthselenazole, thiazoline, 2-quinoline, 4-quinoline, 1-isoquinoline, 3-isoquinoline, benzimidazole, 3,3-dialkylbenzoindolenin, 2-pyridine, 4-pyridine, 3,3-dialkylbenzo [e] indole , Tetrazole, triazole, pyrimidine, and thiadiazole Heterocyclic group is preferable to be, include the following structures Particularly preferred heterocyclic groups.
一般式(a−4)中、Rl〜R8、Arl、Ar2、Yl及びY2は、それぞれ前記一般式(a−2)におけるものと同義である。R11及びR12は、それぞれ同じでも異なっていてもよく、水素原子、アリル基、シクロへキシル基又は炭素原子数1〜8のアルキル基を示す。Zは、酸素原子又は硫黄原子を示す。 In general formula (a-4), R 1 to R 8 , Ar 1 , Ar 2 , Y 1 and Y 2 have the same meanings as in general formula (a-2). R 11 and R 12 may be the same or different and each represents a hydrogen atom, an allyl group, a cyclohexyl group, or an alkyl group having 1 to 8 carbon atoms. Z represents an oxygen atom or a sulfur atom.
本発明において、好適に用いることのできる一般式(a)で示されるシアニン色素の具体例としては、以下に例示するものの他、特開2001−133969号公報の段落番号[0017]〜[0019]、特開2002−40638号公報の段落番号[0012]〜[0038]、特開2002−23360号公報の段落番号[0012]〜[0023]、に記載されたものを挙げることができる。 Specific examples of the cyanine dye represented by formula (a) that can be preferably used in the present invention include those exemplified below, and paragraph numbers [0017] to [0019] of JP-A No. 2001-133969. And paragraph numbers [0012] to [0038] of JP-A No. 2002-40638 and paragraph numbers [0012] to [0023] of JP-A No. 2002-23360.
一般式(b)中、Lは共役炭素原子数7以上のメチン鎖を表し、該メチン鎖は置換基を有していてもよく、置換基が互いに結合して環構造を形成していてもよい。Zb+は対カチオンを示す。好ましい対カチオンとしては、アンモニウム、ヨードニウム、スルホニウム、ホスホニウム、ピリジニウム、アルカリ金属カチオン(Na+、K+、Li+)などが挙げられる。R9〜R14及びR15〜R20は互いに独立に水素原子又はハロゲン原子、シアノ基、アルキル基、アリール基、アルケニル基、アルキニル基、カルボニル基、チオ基、スルホニル基、スルフィニル基、オキシ基、又はアミノ基から選択される置換基、或いは、これらを2つ若しくは3つ組合せた置換基を表し、互いに結合して環構造を形成していてもよい。ここで、一般式(b)中、Lが共役炭素原子数7のメチン鎖を表すもの、及び、R9〜R14及びR15〜R20がすべて水素原子を表すものが入手の容易性と効果の観点から好ましい。 In the general formula (b), L represents a methine chain having 7 or more conjugated carbon atoms, the methine chain may have a substituent, and the substituents may be bonded to each other to form a ring structure. Good. Zb + represents a counter cation. Preferred counter cations include ammonium, iodonium, sulfonium, phosphonium, pyridinium, alkali metal cations (Na + , K + , Li + ) and the like. R 9 to R 14 and R 15 to R 20 are each independently a hydrogen atom or halogen atom, cyano group, alkyl group, aryl group, alkenyl group, alkynyl group, carbonyl group, thio group, sulfonyl group, sulfinyl group, oxy group Or a substituent selected from amino groups, or a combination of two or three of these, and may be bonded to each other to form a ring structure. Here, in general formula (b), those in which L represents a methine chain having 7 conjugated carbon atoms and those in which R 9 to R 14 and R 15 to R 20 all represent hydrogen atoms are easily available. It is preferable from the viewpoint of effect.
本発明において、好適に用いることのできる一般式(b)で示される染料の具体例としては、以下に例示するものを挙げることができる。 Specific examples of the dye represented by formula (b) that can be suitably used in the present invention include those exemplified below.
一般式(c)中、Y3及びY4は、それぞれ、酸素原子、硫黄原子、セレン原子、又はテルル原子を表す。Mは、共役炭素数5以上のメチン鎖を表す。R21〜R24及びR25〜R28は、それぞれ同じであっても異なっていてもよく、水素原子、ハロゲン原子、シアノ基、アルキル基、アリール基、アルケニル基、アルキニル基、カルボニル基、チオ基、スルホニル基、スルフィニル基、オキシ基、又はアミノ基を表す。また、式中Za-は対アニオンを表し、前記一般式(a−1)におけるZa-と同義である。 In general formula (c), Y 3 and Y 4 each represent an oxygen atom, a sulfur atom, a selenium atom, or a tellurium atom. M represents a methine chain having 5 or more conjugated carbon atoms. R 21 to R 24 and R 25 to R 28 may be the same or different, and are each a hydrogen atom, a halogen atom, a cyano group, an alkyl group, an aryl group, an alkenyl group, an alkynyl group, a carbonyl group, a thiol group, Represents a group, a sulfonyl group, a sulfinyl group, an oxy group, or an amino group. Further, wherein Za - include a counter anion, Za in the general formula (a-1) - synonymous.
本発明において、好適に用いることのできる一般式(c)で示される染料の具体例としては、以下に例示するものを挙げることができる。 In the present invention, specific examples of the dye represented by formula (c) that can be suitably used include those exemplified below.
一般式(d)中、R29〜R32は、各々独立に、水素原子、アルキル基、又はアリール基を示す。R33及びR34は各々独立に、アルキル基、置換オキシ基、又はハロゲン原子を示す。n及びmは各々独立に0乃至4の整数を示す。R29とR30、又はR31とR32はそれぞれ結合して環を形成してもよく、またR29及び/又はR30はR33と、またR31及び/又はR32はR34と結合して環を形成してもよく、さらに、R33或いはR34が複数存在する場合に、R33同士或いはR34同士は互いに結合して環を形成してもよい。X2及びX3は、各々独立に、水素原子、アルキル基、又はアリール基を示す。Qは置換基を有していてもよいトリメチン基又はペンタメチン基であり、2価の有機基とともに環構造を形成してもよい。Zc-は対アニオンを示し、前記一般式(a−1)におけるZa-と同義である。 In general formula (d), R 29 to R 32 each independently represent a hydrogen atom, an alkyl group, or an aryl group. R 33 and R 34 each independently represents an alkyl group, a substituted oxy group, or a halogen atom. n and m each independently represent an integer of 0 to 4. R 29 and R 30 , or R 31 and R 32 may be bonded to each other to form a ring, and R 29 and / or R 30 is R 33 and R 31 and / or R 32 is R 34 taken together, may form a ring, further, when R 33 or R 34 there are a plurality, R 33 or between R 34 each other may be bonded to each other to form a ring. X 2 and X 3 each independently represent a hydrogen atom, an alkyl group, or an aryl group. Q is a trimethine group or a pentamethine group which may have a substituent, and may form a ring structure together with a divalent organic group. Zc − represents a counter anion and has the same meaning as Za − in the general formula (a-1).
本発明において、好適に用いることのできる一般式(d)で示される染料の具体例としては、以下に例示するものを挙げることができる。 In the present invention, specific examples of the dye represented by the general formula (d) that can be suitably used include those exemplified below.
一般式(e)中、R35〜R50は、それぞれ独立に、水素原子又は置換基を有してもよい、ハロゲン原子、シアノ基、アルキル基、アリール基、アルケニル基、アルキニル基、水酸基、カルボニル基、チオ基、スルホニル基、スルフィニル基、オキシ基、アミノ基、オニウム塩構造を示す。Mは2つの水素原子若しくは金属原子、ハロメタル基、オキシメタル基を示すが、そこに含まれる金属原子としては、周期律表のIA、IIA、IIIB、IVB族原子、第一、第二、第三周期の遷移金属、ランタノイド元素が挙げられ、中でも、銅、ニッケル、マグネシウム、鉄、亜鉛、スズ、コバルト、アルミニウム、チタン、バナジウムが好ましく、バナジウム、ニッケル、亜鉛、スズが特に好ましい。これら金属原子は原子価を適切にするために酸素原子、ハロゲン原子等と結合していてもよい。 In the general formula (e), R 35 to R 50 each independently represent a hydrogen atom or a substituent, which may have a halogen atom, a cyano group, an alkyl group, an aryl group, an alkenyl group, an alkynyl group, a hydroxyl group, A carbonyl group, a thio group, a sulfonyl group, a sulfinyl group, an oxy group, an amino group, and an onium salt structure are shown. M represents two hydrogen atoms or metal atoms, a halometal group, and an oxymetal group, and the metal atoms contained therein include IA, IIA, IIIB, IVB group atoms of the periodic table, first, second, second Three-period transition metals and lanthanoid elements may be mentioned, among which copper, nickel, magnesium, iron, zinc, tin, cobalt, aluminum, titanium, and vanadium are preferable, and vanadium, nickel, zinc, and tin are particularly preferable. These metal atoms may be bonded to an oxygen atom, a halogen atom or the like in order to make the valence appropriate.
本発明において、好適に用いることのできる一般式(e)で示される染料の具体例としては、以下に例示するものを挙げることができる。 In the present invention, specific examples of the dye represented by formula (e) that can be suitably used include those exemplified below.
一般式(f−1)及び(f−2)中、R51〜R58は、それぞれ独立に、水素原子又は置換基を有してもよいアルキル基、アリール基を示す。X-は、前記一般式(a−2)におけるものと同義である。 In the general formulas (f-1) and (f-2), R 51 to R 58 each independently represent a hydrogen atom or an alkyl group or an aryl group that may have a substituent. X − has the same meaning as in general formula (a-2).
本発明において、好適に用いることのできる一般式(d)で示される染料の具体例としては、以下に例示するものを挙げることができる。 In the present invention, specific examples of the dye represented by the general formula (d) that can be suitably used include those exemplified below.
上記以外の光熱変換剤としては、特開2001−242613号公報に記載の複数の発色団を有する染料、特開2002−97384号公報、米国特許第6,124,425号明細書に記載の高分子化合物に共有結合で発色団が連結された色素、米国特許6,248,893号明細書に記載のアニオン染料、特開2001−347765号公報に記載の表面配向性基を有する染料等を好適に用いることができる。 Other photothermal conversion agents include dyes having a plurality of chromophores described in JP-A-2001-242613, JP-A-2002-97384, and U.S. Pat. No. 6,124,425. Suitable are pigments in which a chromophore is covalently linked to a molecular compound, an anionic dye described in US Pat. No. 6,248,893, a dye having a surface orientation group described in JP-A-2001-347765, etc. Can be used.
本発明において光熱変換剤として使用される顔料としては、市販の顔料及びカラーインデックス(C.I.)便覧、「最新顔料便覧」(日本顔料技術協会編、1977年刊)、「最新顔料応用技術」(CMC出版、1986年刊)、「印刷インキ技術」CMC出版、1984年刊)に記載されている顔料が挙げられる。 Examples of the pigment used as the photothermal conversion agent in the present invention include commercially available pigments and Color Index (CI) manual, “Latest Pigment Handbook” (edited by Japan Pigment Technical Association, published in 1977), “Latest Pigment Applied Technology”. (CMC Publishing, published in 1986) and “Printing Ink Technology”, published by CMC Publishing, published in 1984).
顔料の種類としては、黒色顔料、黄色顔料、オレンジ色顔料、褐色顔料、赤色顔料、紫色顔料、青色顔料、緑色顔料、蛍光顔料、金属粉顔料、その他、ポリマー結合色素が挙げられる。具体的には、不溶性アゾ顔料、アゾレーキ顔料、縮合アゾ顔料、キレートアゾ顔料、フタロシアニン系顔料、アントラキノン系顔料、ペリレン及びペリノン系顔料、チオインジゴ系顔料、キナクリドン系顔料、ジオキサジン系顔料、イソインドリノン系顔料、キノフタロン系顔料、染付けレーキ顔料、アジン顔料、ニトロソ顔料、ニトロ顔料、天然顔料、蛍光顔料、無機顔料、カーボンブラック等が使用できる。これらの顔料のうち好ましいものはカーボンブラックである。 Examples of the pigment include black pigments, yellow pigments, orange pigments, brown pigments, red pigments, purple pigments, blue pigments, green pigments, fluorescent pigments, metal powder pigments, and other polymer-bonded dyes. Specifically, insoluble azo pigments, azo lake pigments, condensed azo pigments, chelate azo pigments, phthalocyanine pigments, anthraquinone pigments, perylene and perinone pigments, thioindigo pigments, quinacridone pigments, dioxazine pigments, isoindolinone pigments In addition, quinophthalone pigments, dyed lake pigments, azine pigments, nitroso pigments, nitro pigments, natural pigments, fluorescent pigments, inorganic pigments, carbon black, and the like can be used. Among these pigments, carbon black is preferable.
これらの顔料は表面処理をせずに用いてもよく、表面処理を施して用いてもよい。表面処理の方法には、樹脂やワックスを表面コートする方法、界面活性剤を付着させる方法、反応性物質(例えば、シランカップリング剤、エポキシ化合物、ポリイソシアネート等)を顔料表面に結合させる方法等が考えられる。上記の表面処理方法は、「金属石鹸の性質と応用」(幸書房)、「印刷インキ技術」(CMC出版、1984年刊)及び「最新顔料応用技術」(CMC出版、1986年刊)に記載されている。 These pigments may be used without surface treatment or may be used after surface treatment. The surface treatment method includes a method of surface coating with a resin or wax, a method of attaching a surfactant, a method of bonding a reactive substance (eg, silane coupling agent, epoxy compound, polyisocyanate, etc.) to the pigment surface, etc. Can be considered. The above-mentioned surface treatment methods are described in “Characteristics and Applications of Metal Soap” (Shobobo), “Printing Ink Technology” (CMC Publishing, 1984) and “Latest Pigment Application Technology” (CMC Publishing, 1986). Yes.
顔料の粒径は、画像形成層塗布液中での安定性及び形成される画像形成層の均一性の観点から、0.01μm〜10μmの範囲にあることが好ましく、0.05μm〜1μmの範囲にあることがさらに好ましく、特に0.1μm〜1μmの範囲にあることが好ましい。 The particle diameter of the pigment is preferably in the range of 0.01 μm to 10 μm, preferably in the range of 0.05 μm to 1 μm, from the viewpoints of stability in the image forming layer coating solution and uniformity of the formed image forming layer. It is more preferable that it is in the range of 0.1 μm to 1 μm.
顔料を分散する方法としては、インク製造やトナー製造等に用いられる公知の分散技術が使用できる。分散機としては、超音波分散器、サンドミル、アトライター、パールミル、スーパーミル、ボールミル、インペラー、デスパーザー、KDミル、コロイドミル、ダイナトロン、3本ロールミル、加圧ニーダー等が挙げられる。詳細は、「最新顔料応用技術」(CMC出版、1986年刊)に記載されている。 As a method for dispersing the pigment, a known dispersion technique used in ink production, toner production, or the like can be used. Examples of the disperser include an ultrasonic disperser, a sand mill, an attritor, a pearl mill, a super mill, a ball mill, an impeller, a disperser, a KD mill, a colloid mill, a dynatron, a three-roll mill, and a pressure kneader. Details are described in "Latest Pigment Applied Technology" (CMC Publishing, 1986).
これらの顔料若しくは染料は、画像形成層(記録層)を構成する全固形分に対し0.01〜50質量%、好ましくは0.1〜10質量%、染料の場合特に好ましくは0.5〜10質量%、顔料の場合特に好ましくは0.1〜10質量%の割合で添加することができる。顔料若しくは染料の添加量が0.01質量%未満であると感度が低くなる傾向があり、また50質量%を越えて配合すると、配合量の増加にしたがって記録層の均一性や、記録層の耐久性に好ましくない影響を与えるおそれがでてくる。また、用いられる染料若しくは顔料は単一の化合物であっても、2種以上の化合物を混合したものでもよく、複数の波長の露光機へ対応するために、吸収波長の異なる染料若しくは顔料を併用することも好ましくおこなわれる。 These pigments or dyes are 0.01 to 50% by mass, preferably 0.1 to 10% by mass, particularly preferably 0.5 to 10% by mass, based on the total solid content constituting the image forming layer (recording layer). In the case of 10 mass% and a pigment, it can be added particularly preferably at a ratio of 0.1 to 10 mass%. When the amount of pigment or dye added is less than 0.01% by mass, the sensitivity tends to be low. When the amount exceeds 50% by mass, the uniformity of the recording layer increases as the blending amount increases. There is a risk of adversely affecting durability. In addition, the dye or pigment used may be a single compound or a mixture of two or more compounds, and dyes or pigments having different absorption wavelengths are used in combination in order to cope with an exposure machine having a plurality of wavelengths. It is also preferably done.
〔その他の成分〕
本発明におけるポジ型画像形成層を形成するにあたっては、更に必要に応じて、種々の添加剤を添加することができる。例えば、他のオニウム塩、o−キノンジアジド化合物、芳香族スルホン化合物、芳香族スルホン酸エステル化合物等の熱分解性であり、分解しない状態ではアルカリ水可溶性高分子化合物の溶解性を実質的に低下させる物質を併用することは、画像部の現像液への溶解阻止性の向上を図る点では、好ましい。他のオニウム塩としては、前記一般式(II)で表される如きスルホニウム塩以外のオニウムであって、ジアゾニウム塩、アンモニウム塩、ホスホニウム塩、ヨードニウム塩、セレノニウム塩、アルソニウム塩、アジニウム塩等を挙げることができる。
[Other ingredients]
In forming the positive image forming layer in the present invention, various additives can be further added as necessary. For example, it is thermally decomposable, such as other onium salts, o-quinonediazide compounds, aromatic sulfone compounds, aromatic sulfonic acid ester compounds, etc., and substantially reduces the solubility of the alkaline water-soluble polymer compound in a state where it does not decompose. Use of a substance in combination is preferable from the viewpoint of improving the dissolution inhibiting property of the image area in the developer. Examples of other onium salts include oniums other than sulfonium salts represented by the general formula (II), such as diazonium salts, ammonium salts, phosphonium salts, iodonium salts, selenonium salts, arsonium salts, azinium salts, and the like. be able to.
本発明において用いられる他のオニウム塩として、好適なものとしては、例えば、S. I. Schlesinger, Photogr. Sci. Eng., 18, 387(1974) 、T. S. Bal et al, Polymer, 21, 423(1980) 、特開平5−158230号公報に記載のジアゾニウム塩、米国特許第4,069,055号、同4,069,056号、特開平3−140140号の明細書に記載のアンモニウム塩、D. C. Necker et al, Macromolecules, 17, 2468(1984)、C. S. Wen et al, Teh, Proc. Conf. Rad. Curing ASIA, p478 Tokyo, Oct (1988)、米国特許第4,069,055号、同4,069,056号の各明細書に記載のホスホニウム塩、J. V.Crivello et al, Macromorecules, 10(6), 1307 (1977)、Chem. & Eng. News, Nov. 28, p31 (1988)、欧州特許第104,143号、米国特許第5,041,358号、同4,491,628号の各明細書、特開平2−150848号、特開平2−296514号の各公報に記載のヨードニウム塩、J. V. Crivello et al, Macromorecules, 10(6), 1307 (1977)、J. V. Crivello et al, J. Polymer Sci., Polymer Chem. Ed., 17, 1047 (1979) に記載のセレノニウム塩、C. S. Wen et al, Teh,Proc. Conf. Rad. Curing ASIA, p478 Tokyo, Oct (1988)に記載のアルソニウム塩等が挙げられる。
他のオニウム塩のなかでも、ジアゾニウム塩が特に好ましい。また、特に好適なジアゾニウム塩としては、特開平5−158230号公報に記載のものが挙げられる。
As other onium salts used in the present invention, for example, S.I. I. Schlesinger, Photogr. Sci. Eng. , 18, 387 (1974), T .; S. Bal et al, Polymer, 21, 423 (1980), diazonium salts described in JP-A-5-158230, U.S. Pat. Nos. 4,069,055, 4,069,056, and JP-A-3-140140. Ammonium salts described in the specification of C. Necker et al, Macromolecules, 17, 2468 (1984), C.I. S. Wen et al, Teh, Proc. Conf. Rad. Curing ASIA, p478 Tokyo, Oct (1988), U.S. Pat. Nos. 4,069,055 and 4,069,056, phosphonium salts described in J. Pat. V. Crivello et al, Macromolecules, 10 (6), 1307 (1977), Chem. & Eng. News, Nov. 28, p31 (1988), European Patent No. 104,143, U.S. Pat. Nos. 5,041,358 and 4,491,628, JP-A-2-150848, JP-A-2-296514. Iodonium salts described in each of the above publications; V. Crivello et al, Macromolecules, 10 (6), 1307 (1977), J. MoI. V. Crivello et al, J. MoI. Polymer Sci. , Polymer Chem. Ed. , 17, 1047 (1979), C.I. S. Wen et al, Theh, Proc. Conf. Rad. Curing ASIA, p478 Tokyo, Oct (1988).
Of the other onium salts, diazonium salts are particularly preferred. Particularly suitable diazonium salts include those described in JP-A-5-158230.
上記他のオニウム塩における対イオンとしては、四フッ化ホウ酸、六フッ化リン酸、トリイソプロピルナフタレンスルホン酸、5−ニトロ−o−トルエンスルホン酸、5−スルホサリチル酸、2,5−ジメチルベンゼンスルホン酸、2,4,6−トリメチルベンゼンスルホン酸、2−ニトロベンゼンスルホン酸、3−クロロベンゼンスルホン酸、3−ブロモベンゼンスルホン酸、2−フルオロカプリルナフタレンスルホン酸、ドデシルベンゼンスルホン酸、1−ナフトール−5−スルホン酸、2−メトキシ−4−ヒドロキシ−5−ベンゾイル−ベンゼンスルホン酸、及びパラトルエンスルホン酸等を挙げることができる。これらの中でも特に六フッ化リン酸、トリイソプロピルナフタレンスルホン酸や2,5−ジメチルベンゼンスルホン酸のごときアルキル芳香族スルホン酸が好適である。 Counter ions in the other onium salts include tetrafluoroboric acid, hexafluorophosphoric acid, triisopropylnaphthalenesulfonic acid, 5-nitro-o-toluenesulfonic acid, 5-sulfosalicylic acid, and 2,5-dimethylbenzene. Sulfonic acid, 2,4,6-trimethylbenzenesulfonic acid, 2-nitrobenzenesulfonic acid, 3-chlorobenzenesulfonic acid, 3-bromobenzenesulfonic acid, 2-fluorocaprylnaphthalenesulfonic acid, dodecylbenzenesulfonic acid, 1-naphthol- Examples include 5-sulfonic acid, 2-methoxy-4-hydroxy-5-benzoyl-benzenesulfonic acid, and paratoluenesulfonic acid. Of these, particularly preferred are alkyl aromatic sulfonic acids such as hexafluorophosphoric acid, triisopropylnaphthalenesulfonic acid and 2,5-dimethylbenzenesulfonic acid.
好適なキノンジアジド類としては、o−キノンジアジド化合物を挙げることができる。本発明に用いられるo−キノンジアジド化合物は、少なくとも1個のo−キノンジアジド基を有する化合物で、熱分解によりアルカリ可溶性を増すものであり、種々の構造の化合物を用いることができる。つまり、o−キノンジアジドは熱分解により結着剤の溶解抑制能を失うことと、o−キノンジアジド自身がアルカリ可溶性の物質に変化することの両方の効果により感材系の溶解性を助ける。本発明に用いられるo−キノンジアジド化合物としては、例えば、J.コーサー著「ライト−センシティブ・システムズ」(John Wiley & Sons. Inc.)第339〜352頁に記載の化合物が使用できるが、特に種々の芳香族ポリヒドロキシ化合物或いは芳香族アミノ化合物と反応させたo−キノンジアジドのスルホン酸エステル又はスルホン酸アミドが好適である。また、特公昭43−28403 号公報に記載されているようなベンゾキノン(1,2)−ジアジドスルホン酸クロライド又はナフトキノン−(1,2)−ジアジド−5−スルホン酸クロライドとピロガロール−アセトン樹脂とのエステル、米国特許第3,046,120 号及び同第3,188,210 号に記載されているベンゾキノン−(1,2)−ジアジドスルホン酸クロライド又はナフトキノン−(1,2)−ジアジド−5−スルホン酸クロライドとフェノール−ホルムアルデヒド樹脂とのエステルも好適に使用される。 Suitable quinonediazides include o-quinonediazide compounds. The o-quinonediazide compound used in the present invention is a compound having at least one o-quinonediazide group, which increases alkali solubility by thermal decomposition, and compounds having various structures can be used. That is, o-quinonediazide helps the solubility of the sensitive material system by both the effect of losing the ability to suppress the dissolution of the binder due to thermal decomposition and the change of o-quinonediazide itself into an alkali-soluble substance. Examples of the o-quinonediazide compound used in the present invention include J. Although the compounds described in pages 339 to 352 of “Light-Sensitive Systems” (John Wiley & Sons. Inc.) by Korser can be used, they are particularly reacted with various aromatic polyhydroxy compounds or aromatic amino compounds. Preferred are sulfonic acid esters or sulfonic acid amides of quinonediazides. Further, benzoquinone (1,2) -diazide sulfonic acid chloride or naphthoquinone- (1,2) -diazide-5-sulfonic acid chloride and pyrogallol-acetone resin as described in JP-B-43-28403 Esters of benzoquinone- (1,2) -diazide sulfonic acid chloride or naphthoquinone- (1,2) -diazide- described in U.S. Pat. Nos. 3,046,120 and 3,188,210. Esters of 5-sulfonic acid chloride and phenol-formaldehyde resin are also preferably used.
さらに、ナフトキノン−(1,2)−ジアジド−4−スルホン酸クロライドとフェノールホルムアルデヒド樹脂あるいはクレゾール−ホルムアルデヒド樹脂とのエステル、ナフトキノン−(1,2)−ジアジド−4−スルホン酸クロライドとピロガロール−アセトン樹脂とのエステルも同様に好適に使用される。その他の有用なo−キノンジアジド化合物としては、数多くの特許に報告され知られている。例えば、特開昭47−5303号、特開昭48−63802号、特開昭48−63803号、特開昭48−96575号、特開昭49−38701号、特開昭48−13354号、特公昭41−11222号、特公昭45−9610号、特公昭49−17481号などの各公報、米国特許第2,797,213号、同第3,454,400号、同第3,544,323号、同第3,573,917号、同第3,674,495号、同第3,785,825号、英国特許第1,227,602号、同第1,251,345号、同第1,267,005号、同第1,329,888号、同第1,330,932号、ドイツ特許第854,890号などの各明細書中に記載されているものを挙げることができる。 Further, esters of naphthoquinone- (1,2) -diazido-4-sulfonic acid chloride with phenol formaldehyde resin or cresol-formaldehyde resin, naphthoquinone- (1,2) -diazido-4-sulfonic acid chloride and pyrogallol-acetone resin Similarly, the esters are also preferably used. Other useful o-quinonediazide compounds are reported and known in numerous patents. For example, JP-A-47-5303, JP-A-48-63802, JP-A-48-63803, JP-A-48-96575, JP-A-49-38701, JP-A-48-13354, Japanese Patent Publication Nos. 41-11222, 45-9610, 49-17482, U.S. Pat. Nos. 2,797,213, 3,454,400, and 3,544 No. 323, No. 3,573,917, No. 3,674,495, No. 3,785,825, British Patent No. 1,227,602, No. 1,251,345, No. No. 1,267,005, No. 1,329,888, No. 1,330,932, German Patent No. 854,890 and the like. .
o−キノンジアジド化合物の添加量としては、好ましくは画像形成材料の全固形分に対し、1〜50質量%、更に好ましくは5〜30質量%、特に好ましくは10〜30質量%の範囲である。これらの化合物は単一で使用できるが、数種の混合物として使用してもよい。 The addition amount of the o-quinonediazide compound is preferably in the range of 1 to 50% by mass, more preferably 5 to 30% by mass, and particularly preferably 10 to 30% by mass with respect to the total solid content of the image forming material. These compounds can be used alone, but may be used as a mixture of several kinds.
o−キノンジアジド化合物以外の添加剤の添加量としては、好ましくは画像形成材料の全固形分に対し、1〜50質量%、更に好ましくは5〜30質量%、特に好ましくは10〜30質量%である。なお、本発明における添加剤と結着剤は、同一層へ含有させることが好ましい。 The addition amount of additives other than the o-quinonediazide compound is preferably 1 to 50% by mass, more preferably 5 to 30% by mass, and particularly preferably 10 to 30% by mass with respect to the total solid content of the image forming material. is there. In addition, it is preferable to make the additive and binder in this invention contain in the same layer.
また、更に感度を向上させる目的で、環状酸無水物類、フェノール類、有機酸類を併用することもできる。環状酸無水物としては米国特許第4,115,128号明細書に記載されている無水フタル酸、テトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、3,6−エンドオキシ−Δ4−テトラヒドロ無水フタル酸、テトラクロル無水フタル酸、無水マレイン酸、クロル無水マレイン酸、α−フェニル無水マレイン酸、無水コハク酸、無水ピロメリット酸などが使用できる。フェノール類としては、ビスフェノールA、p−ニトロフェノール、p−エトキシフェノール、2,4,4’−トリヒドロキシベンゾフェノン、2,3,4−トリヒドロキシベンゾフェノン、4−ヒドロキシベンゾフェノン、4,4′,4″−トリヒドロキシトリフェニルメタン、4,4’,3”,4”−テトラヒドロキシ−3,5,3′,5′−テトラメチルトリフェニルメタンなどが挙げられる。更に、有機酸類としては、特開昭60−88942号公報、特開平2−96755号公報などに記載されている、スルホン酸類、スルフィン酸類、アルキル硫酸類、ホスホン酸類、リン酸エステル類及びカルボン酸類などがあり、具体的には、p−トルエンスルホン酸、ドデシルベンゼンスルホン酸、p−トルエンスルフィン酸、エチル硫酸、フェニルホスホン酸、フェニルホスフィン酸、リン酸フェニル、リン酸ジフェニル、安息香酸、イソフタル酸、アジピン酸、p−トルイル酸、3,4−ジメトキシ安息香酸、フタル酸、テレフタル酸、4−シクロヘキセン−1,2−ジカルボン酸、エルカ酸、ラウリン酸、n−ウンデカン酸、アスコルビン酸などが挙げられる。上記の環状酸無水物、フェノール類及び有機酸類の画像形成材料中に占める割合は、0.05〜20質量%が好ましく、より好ましくは0.1〜15質量%、特に好ましくは0.1〜10質量%である。 Further, for the purpose of further improving sensitivity, cyclic acid anhydrides, phenols, and organic acids can be used in combination. Examples of cyclic acid anhydrides include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, 3,6-endooxy-Δ4-tetrahydrophthalic anhydride described in US Pat. No. 4,115,128, Tetrachlorophthalic anhydride, maleic anhydride, chloromaleic anhydride, α-phenylmaleic anhydride, succinic anhydride, pyromellitic anhydride and the like can be used. As phenols, bisphenol A, p-nitrophenol, p-ethoxyphenol, 2,4,4′-trihydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 4-hydroxybenzophenone, 4,4 ′, 4 ″ -Trihydroxytriphenylmethane, 4,4 ′, 3 ″, 4 ″ -tetrahydroxy-3,5,3 ′, 5′-tetramethyltriphenylmethane and the like. There are sulfonic acids, sulfinic acids, alkylsulfuric acids, phosphonic acids, phosphoric acid esters, carboxylic acids, and the like, which are described in Japanese Laid-Open Patent Publication No. 60-88942 and Japanese Patent Application Laid-Open No. 2-96755. , P-toluenesulfonic acid, dodecylbenzenesulfonic acid, p-toluenesulfinic acid, ethyl sulfate Phenylphosphonic acid, phenylphosphinic acid, phenyl phosphate, diphenyl phosphate, benzoic acid, isophthalic acid, adipic acid, p-toluic acid, 3,4-dimethoxybenzoic acid, phthalic acid, terephthalic acid, 4-cyclohexene-1, Examples thereof include 2-dicarboxylic acid, erucic acid, lauric acid, n-undecanoic acid, ascorbic acid, etc. The ratio of the cyclic acid anhydride, phenols and organic acids in the image forming material is 0.05-20. % By mass is preferable, more preferably 0.1 to 15% by mass, and particularly preferably 0.1 to 10% by mass.
また、本発明における画像形成層塗布液中には、現像条件に対する処理の安定性を広げるため、特開昭62−251740号公報や特開平3−208514号公報に記載されているような非イオン界面活性剤、特開昭59−121044号公報、特開平4−13149号公報に記載されているような両性界面活性剤、EP950517公報に記載されているようなシロキサン系化合物、特開平11−288093号公報に記載されているようなフッ素含有のモノマー共重合体を添加することができる。
非イオン界面活性剤の具体例としては、ソルビタントリステアレート、ソルビタンモノパルミテート、ソルビタントリオレート、ステアリン酸モノグリセリド、ポリオキシエチレンノニルフェニルエーテル等が挙げられる。両面活性剤の具体例としては、アルキルジ(アミノエチル)グリシン、アルキルポリアミノエチルグリシン塩酸塩、2−アルキル−N−カルボキシエチル−N−ヒドロキシエチルイミダゾリニウムベタインやN−テトラデシル−N,N−ベタイン型(例えば、商品名「アモーゲンK」:第一工業(株)製)等が挙げられる。
シロキサン系化合物としては、ジメチルシロキサンとポリアルキレンオキシドのブロック共重合体が好ましく、具体例として、(株)チッソ社製、DBE−224,DBE−621,DBE−712,DBP−732,DBP−534、独Tego社製、Tego Glide100等のポリアルキレンオキシド変性シリコーンを挙げることが出来る。
上記非イオン界面活性剤及び両性界面活性剤の画像形成材料中に占める割合は、0.05〜15質量%が好ましく、より好ましくは0.1〜5質量%である。
Further, in the image forming layer coating solution in the present invention, in order to broaden the stability of the processing with respect to the developing conditions, nonionic ions such as those described in JP-A Nos. 62-251740 and 3-208514 are disclosed. Surfactants, amphoteric surfactants as described in JP-A-59-121044, JP-A-4-13149, siloxane compounds as described in EP950517, JP-A-11-288093 Fluorine-containing monomer copolymers such as those described in the publication can be added.
Specific examples of the nonionic surfactant include sorbitan tristearate, sorbitan monopalmitate, sorbitan trioleate, stearic acid monoglyceride, polyoxyethylene nonylphenyl ether and the like. Specific examples of the double-sided activator include alkyldi (aminoethyl) glycine, alkylpolyaminoethylglycine hydrochloride, 2-alkyl-N-carboxyethyl-N-hydroxyethylimidazolinium betaine and N-tetradecyl-N, N-betaine. Type (for example, trade name “Amorgen K” manufactured by Daiichi Kogyo Co., Ltd.).
The siloxane compound is preferably a block copolymer of dimethylsiloxane and polyalkylene oxide. Specific examples include DBE-224, DBE-621, DBE-712, DBP-732, DBP-534, manufactured by Chisso Corporation. And polyalkylene oxide-modified silicones such as Tego Glide 100 manufactured by Tego, Germany.
The proportion of the nonionic surfactant and the amphoteric surfactant in the image forming material is preferably 0.05 to 15% by mass, more preferably 0.1 to 5% by mass.
本発明における画像形成層中には、露光による加熱後直ちに可視像を得るための焼き出し剤や、画像着色剤としての染料や顔料を加えることができる。
焼き出し剤としては、露光による加熱によって酸を放出する化合物(光酸放出剤)と塩を形成し得る有機染料の組合せを代表として挙げることができる。具体的には、特開昭50−36209号、同53−8128号の各公報に記載されているo−ナフトキノンジアジド−4−スルホン酸ハロゲニドと塩形成性有機染料の組合せや、特開昭53−36223号、同54−74728号、同60−3626号、同61−143748号、同61−151644号及び同63−58440号の各公報に記載されているトリハロメチル化合物と塩形成性有機染料の組合せを挙げることができる。かかるトリハロメチル化合物としては、オキサゾール系化合物とトリアジン系化合物とがあり、どちらも経時安定性に優れ、明瞭な焼き出し画像を与える。
In the image forming layer of the present invention, a print-out agent for obtaining a visible image immediately after heating by exposure, or a dye or pigment as an image colorant can be added.
Typical examples of the printing-out agent include a combination of a compound that releases an acid by heating by exposure (photoacid releasing agent) and an organic dye that can form a salt. Specifically, combinations of o-naphthoquinonediazide-4-sulfonic acid halides and salt-forming organic dyes described in JP-A-50-36209 and JP-A-53-8128, 36223, 54-74728, 60-3626, 61-143748, 61-151644 and 63-58440, and trihalomethyl compounds and salt-forming organic dyes Can be mentioned. Such trihalomethyl compounds include oxazole compounds and triazine compounds, both of which have excellent temporal stability and give clear printout images.
画像の着色剤としては、前述の塩形成性有機染料以外に他の染料を用いることができる。塩形成性有機染料を含めて、好適な染料として油溶性染料と塩基性染料をあげることができる。具体的にはオイルイエロー#101、オイルイエロー#103、オイルピンク#312、オイルグリーンBG、オイルブルーBOS、オイルブルー#603、オイルブラックBY、オイルブラックBS、オイルブラックT−505(以上オリエント化学工業(株)製)、ビクトリアピュアブルー、クリスタルバイオレット(CI42555)、メチルバイオレット(CI42535)、エチルバイオレット、ローダミンB(CI145170B)、マラカイトグリーン(CI42000)、メチレンブルー(CI52015)などを挙げることができる。また、特開昭62−293247号公報に記載されている染料は特に好ましい。これらの染料は、画像形成材料の全固形分に対し、0.01〜10質量%、好ましくは0.1〜3質量%の割合で画像形成材料中に添加することができる。更に本発明の画像形成材料中には必要に応じ、塗膜の柔軟性等を付与するために可塑剤が加えられる。例えば、ブチルフタリル、ポリエチレングリコール、クエン酸トリブチル、フタル酸ジエチル、フタル酸ジブチル、フタル酸ジヘキシル、フタル酸ジオクチル、リン酸トリクレジル、リン酸トリブチル、リン酸トリオクチル、オレイン酸テトラヒドロフルフリル、アクリル酸又はメタクリル酸のオリゴマー及びポリマー等が用いられる。 As the image colorant, other dyes can be used in addition to the above-mentioned salt-forming organic dyes. Examples of suitable dyes including salt-forming organic dyes include oil-soluble dyes and basic dyes. Specifically, oil yellow # 101, oil yellow # 103, oil pink # 312, oil green BG, oil blue BOS, oil blue # 603, oil black BY, oil black BS, oil black T-505 (oriental chemical industry) Manufactured by Co., Ltd.), Victoria Pure Blue, Crystal Violet (CI42555), Methyl Violet (CI42535), Ethyl Violet, Rhodamine B (CI145170B), Malachite Green (CI42000), Methylene Blue (CI522015), and the like. The dyes described in JP-A-62-293247 are particularly preferred. These dyes can be added to the image forming material in a proportion of 0.01 to 10% by mass, preferably 0.1 to 3% by mass, based on the total solid content of the image forming material. Furthermore, a plasticizer is added to the image forming material of the present invention as needed in order to impart flexibility of the coating film. For example, butylphthalyl, polyethylene glycol, tributyl citrate, diethyl phthalate, dibutyl phthalate, dihexyl phthalate, dioctyl phthalate, tricresyl phosphate, tributyl phosphate, trioctyl phosphate, tetrahydrofurfuryl oleate, acrylic acid or methacrylic acid These oligomers and polymers are used.
また、これら以外にも、エポキシ化合物、ビニルエーテル類、さらには、特開平8−276558号公報に記載のヒドロキシメチル基を有するフェノール化合物、アルコキシメチル基を有するフェノール化合物、及び、本発明者らが先に提案した特開平11−160860号公報に記載のアルカリ溶解抑制作用を有する架橋性化合物などを目的に応じて適宜添加することができる。 In addition to these, epoxy compounds, vinyl ethers, and further, phenol compounds having a hydroxymethyl group, phenol compounds having an alkoxymethyl group, and the present inventors described in JP-A-8-276558, A crosslinkable compound having an alkali dissolution inhibiting action described in JP-A-11-160860 proposed in JP-A-11-160860 can be appropriately added depending on the purpose.
本発明の画像形成材料は、この画像形成層を適当な支持体上に形成してなるものであり、平版印刷版原版、カラープルーフ、ディスプレイ材料などのさまざまな用途に適用し得るが、特に赤外線レーザ露光によるダイレクト製版可能なヒートも度対応平版印刷版原版として有用である。 The image forming material of the present invention is formed by forming this image forming layer on a suitable support, and can be applied to various uses such as a lithographic printing plate precursor, a color proof, and a display material. Heat capable of direct plate making by laser exposure is also useful as a lithographic printing plate precursor corresponding to the degree.
[平版印刷版原版]
以下に、本発明の画像形成材料を平版印刷版原版に適用する例を挙げて、具体的な態様について説明する。
[Lithographic printing plate precursor]
Specific embodiments will be described below by giving an example in which the image forming material of the present invention is applied to a lithographic printing plate precursor.
〔画像形成層〕
本発明の画像形成材料が適用される平版印刷版原版は、感光層(画像形成層)塗布液用成分を溶媒に溶かして、適当な支持体上に塗布することにより製造することができる。また、目的に応じて、保護層、樹脂中間層、バックコート層なども同様にして形成することができる。
ここで使用する溶媒としては、エチレンジクロライド、シクロヘキサノン、メチルエチルケトン、メタノール、エタノール、プロパノール、エチレングリコールモノメチルエーテル、1−メトキシ−2−プロパノール、2−メトキシエチルアセテート、1−メトキシ−2−プロピルアセテート、ジメトキシエタン、乳酸メチル、乳酸エチル、N,N−ジメチルアセトアミド、N,N−ジメチルホルムアミド、テトラメチルウレア、N−メチルピロリドン、ジメチルスルホキシド、スルホラン、γ−ブチロラクトン、トルエン等を挙げることができるがこれに限定されるものではない。これらの溶媒は単独或いは混合して使用される。
溶媒中の上記成分(添加剤を含む全固形分)の濃度は、好ましくは1〜50質量%である。
(Image forming layer)
The lithographic printing plate precursor to which the image forming material of the present invention is applied can be produced by dissolving the photosensitive layer (image forming layer) coating solution component in a solvent and coating the solution on a suitable support. Further, depending on the purpose, a protective layer, a resin intermediate layer, a backcoat layer, and the like can be formed in the same manner.
Solvents used here include ethylene dichloride, cyclohexanone, methyl ethyl ketone, methanol, ethanol, propanol, ethylene glycol monomethyl ether, 1-methoxy-2-propanol, 2-methoxyethyl acetate, 1-methoxy-2-propyl acetate, dimethoxy Examples include ethane, methyl lactate, ethyl lactate, N, N-dimethylacetamide, N, N-dimethylformamide, tetramethylurea, N-methylpyrrolidone, dimethyl sulfoxide, sulfolane, γ-butyrolactone, and toluene. It is not limited. These solvents are used alone or in combination.
The concentration of the above components (total solid content including additives) in the solvent is preferably 1 to 50% by mass.
また、塗布、乾燥後に得られる支持体上の塗布量(固形分)は、用途によって異なるが、平版印刷版原版の画像形成層についていえば、一般的に0.5〜5.0g/m2が好ましい。塗布量が少なくなるにつれて、見かけの感度は大になるが、画像形成層の皮膜特性は低下する。
さらに、画像形成層は、単層であってもよいし重層構造を有するものであってもよい。
The coating amount (solid content) on the support obtained after coating and drying varies depending on the use, but generally speaking, 0.5 to 5.0 g / m 2 for the image forming layer of the lithographic printing plate precursor. Is preferred. As the coating amount decreases, the apparent sensitivity increases, but the film properties of the image forming layer decrease.
Further, the image forming layer may be a single layer or may have a multilayer structure.
塗布する方法としては、種々の方法を用いることができるが、例えば、バーコーター塗布、回転塗布、スプレー塗布、カーテン塗布、ディップ塗布、エアーナイフ塗布、ブレード塗布、ロール塗布等を挙げることができる。
本発明における画像形成層中には、塗布性を良化するための界面活性剤、例えば特開昭62−170950号公報に記載されているようなフッ素系界面活性剤を添加することができる。好ましい添加量は、画像形成層全固形分中0.01〜1質量%、さらに好ましくは0.05〜0.5質量%である。
Various methods can be used as the coating method, and examples thereof include bar coater coating, spin coating, spray coating, curtain coating, dip coating, air knife coating, blade coating, and roll coating.
In the image forming layer of the present invention, a surfactant for improving the coating property, for example, a fluorosurfactant described in JP-A-62-170950 can be added. A preferable addition amount is 0.01 to 1% by mass, and more preferably 0.05 to 0.5% by mass in the total solid content of the image forming layer.
〔樹脂中間層〕
平版印刷版原版には、必要に応じて、画像形成層と支持体の間に樹脂中間層を設けることができる。
この樹脂中間層を設けることで、露光によりアルカリ現像液への溶解性が向上する赤外線感応層である画像形成層が、露光面或いはその近傍に設けられることで赤外線レーザに対する感度が良好であるとともに、支持体と該赤外線感応層との間に高分子からなる樹脂中間層が存在し、断熱層として機能し、赤外線レーザの露光により発生した熱が支持体に拡散せず、効率良く画像形成に使用されることからの高感度化も図れるという利点を有する。また、未露光部においては、アルカリ現像液に対して非浸透性である画像形成層自体が樹脂中間層の保護層として機能するために、現像安定性が良好になるとともにディスクリミネーションに優れた画像が形成され、且つ、経時的な安定性も確保されるものと考えられ、露光部においては、溶解抑制能が解除された画像形成層の成分が速やかに現像液に溶解、分散し、さらには、支持体に隣接して存在するこの樹脂中間層自体がアルカリ可溶性高分子からなるものであるため、現像液に対する溶解性が良好で、例えば、活性の低下した現像液などを用いた場合でも、残膜などが発生することなく速やかに溶解し、現像性の向上にも寄与し、この樹脂中間層は有用であると考えられる。
(Resin intermediate layer)
The lithographic printing plate precursor can be provided with a resin intermediate layer between the image forming layer and the support, if necessary.
By providing this resin intermediate layer, an image-forming layer, which is an infrared-sensitive layer whose solubility in an alkaline developer is improved by exposure, is provided on the exposed surface or in the vicinity thereof, and the sensitivity to the infrared laser is good. In addition, there is a resin intermediate layer made of a polymer between the support and the infrared sensitive layer, which functions as a heat insulating layer, and the heat generated by the infrared laser exposure is not diffused to the support, so that an image can be formed efficiently. Since it is used, there is an advantage that high sensitivity can be achieved. In the unexposed area, the image forming layer itself that is impermeable to the alkali developer functions as a protective layer for the resin intermediate layer, so that the development stability is improved and the discrimination is excellent. It is considered that an image is formed and stability over time is ensured, and in the exposed portion, the components of the image forming layer whose dissolution inhibiting ability is released are quickly dissolved and dispersed in the developer. Since the resin intermediate layer itself adjacent to the support is made of an alkali-soluble polymer, the solubility in a developer is good, for example, even when a developer with reduced activity is used. It is considered that this resin intermediate layer is useful because it dissolves quickly without generating a residual film and contributes to improvement of developability.
〔支持体〕
本発明に使用される支持体としては、寸度的に安定な板状物であり、例えば、紙、プラスチック(例えば、ポリエチレン、ポリプロピレン、ポリスチレン等)がラミネートされた紙、金属板(例えば、アルミニウム、亜鉛、銅等)、プラスチックフィルム(例えば、二酢酸セルロース、三酢酸セルロース、プロピオン酸セルロース、酪酸セルロース、酢酸酪酸セルロース、硝酸セルロース、ポリエチレンテレフタレート、ポリエチレン、ポリスチレン、ポリプロピレン、ポリカーボネート、ポリビニルアセタール等)、上記のごとき金属がラミネート、若しくは蒸着された紙、若しくはプラスチックフィルム等が含まれる。
本発明に係る支持体としては、特に平版印刷版原版に使用する場合、ポリエステルフィルム又はアルミニウム板が好ましく、その中でも寸法安定性がよく、比較的安価であるアルミニウム板は特に好ましい。好適なアルミニウム板は、純アルミニウム板及びアルミニウムを主成分とし、微量の異元素を含む合金板であり、更にアルミニウムがラミネート若しくは蒸着されたプラスチックフィルムでもよい。アルミニウム合金に含まれる異元素には、ケイ素、鉄、マンガン、銅、マグネシウム、クロム、亜鉛、ビスマス、ニッケル、チタンなどがある。合金中の異元素の含有量は高々10質量%以下である。本発明において特に好適なアルミニウムは、純アルミニウムであるが、完全に純粋なアルミニウムは精錬技術上製造が困難であるので、僅かに異元素を含有するものでもよい。
このように本発明に適用されるアルミニウム板は、その組成が特定されるものではなく、従来より公知公用の素材のアルミニウム板を適宜に利用することができる。本発明で用いられるアルミニウム板の厚みはおよそ0.1mm〜0.6mm程度、好ましくは0.15mm〜0.4mm、特に好ましくは0.2mm〜0.3mmである。
[Support]
The support used in the present invention is a dimensionally stable plate, for example, paper, paper laminated with plastic (for example, polyethylene, polypropylene, polystyrene, etc.), metal plate (for example, aluminum). , Zinc, copper, etc.), plastic films (eg, cellulose diacetate, cellulose triacetate, cellulose propionate, cellulose butyrate, cellulose acetate butyrate, cellulose nitrate, polyethylene terephthalate, polyethylene, polystyrene, polypropylene, polycarbonate, polyvinyl acetal, etc.), Examples include paper or plastic film on which a metal as described above is laminated or vapor-deposited.
The support according to the present invention is preferably a polyester film or an aluminum plate, particularly when used for a lithographic printing plate precursor. Among them, an aluminum plate is particularly preferable because of its good dimensional stability and relatively low cost. A suitable aluminum plate is a pure aluminum plate or an alloy plate containing aluminum as a main component and containing a trace amount of different elements, and may be a plastic film on which aluminum is laminated or vapor-deposited. Examples of foreign elements contained in the aluminum alloy include silicon, iron, manganese, copper, magnesium, chromium, zinc, bismuth, nickel, and titanium. The content of foreign elements in the alloy is at most 10% by mass. Particularly suitable aluminum in the present invention is pure aluminum, but completely pure aluminum is difficult to produce in the refining technique, and may contain slightly different elements.
Thus, the composition of the aluminum plate applied to the present invention is not specified, and an aluminum plate made of a publicly known material can be appropriately used. The thickness of the aluminum plate used in the present invention is about 0.1 mm to 0.6 mm, preferably 0.15 mm to 0.4 mm, and particularly preferably 0.2 mm to 0.3 mm.
アルミニウム板を粗面化するに先立ち、所望により、表面の圧延油を除去するための例えば界面活性剤、有機溶剤又はアルカリ性水溶液などによる脱脂処理が行われる。アルミニウム板の表面の粗面化処理は、種々の方法により行われるが、例えば、機械的に粗面化する方法、電気化学的に表面を溶解粗面化する方法及び化学的に表面を選択溶解させる方法により行われる。機械的方法としては、ボール研磨法、ブラシ研磨法、ブラスト研磨法、バフ研磨法などの公知の方法を用いることができる。また、電気化学的な粗面化法としては塩酸又は硝酸電解液中で交流又は直流により行う方法がある。また、特開昭54−63902号公報に開示されているように両者を組み合わせた方法も利用することができる。この様に粗面化されたアルミニウム板は、必要に応じてアルカリエッチング処理及び中和処理された後、所望により表面の保水性や耐摩耗性を高めるために陽極酸化処理が施される。アルミニウム板の陽極酸化処理に用いられる電解質としては、多孔質酸化皮膜を形成する種々の電解質の使用が可能で、一般的には硫酸、リン酸、蓚酸、クロム酸或いはそれらの混酸が用いられる。それらの電解質の濃度は電解質の種類によって適宜決められる。 Prior to roughening the aluminum plate, a degreasing treatment with, for example, a surfactant, an organic solvent, or an alkaline aqueous solution for removing rolling oil on the surface is performed as desired. The surface roughening treatment of the aluminum plate is performed by various methods. For example, a method of mechanically roughening, a method of electrochemically dissolving and roughening a surface, and a method of selectively dissolving a surface chemically. This is done by the method of As the mechanical method, a known method such as a ball polishing method, a brush polishing method, a blast polishing method, or a buff polishing method can be used. Further, as an electrochemical surface roughening method, there is a method of performing alternating current or direct current in hydrochloric acid or nitric acid electrolyte. Further, as disclosed in JP-A-54-63902, a method in which both are combined can also be used. The roughened aluminum plate is subjected to alkali etching treatment and neutralization treatment as necessary, and then subjected to anodization treatment if desired in order to enhance the water retention and wear resistance of the surface. As the electrolyte used for the anodizing treatment of the aluminum plate, various electrolytes that form a porous oxide film can be used. In general, sulfuric acid, phosphoric acid, oxalic acid, chromic acid, or a mixed acid thereof is used. The concentration of these electrolytes is appropriately determined depending on the type of electrolyte.
陽極酸化の処理条件は用いる電解質により種々変わるので一概に特定し得ないが一般的には電解質の濃度が1〜80質量%溶液、液温は5〜70℃、電流密度5〜60A/dm2、電圧1〜100V、電解時間10秒〜5分の範囲であれば適当である。陽極酸化皮膜の量は1.0g/m2より少ないと耐刷性が不充分であったり、平版印刷版の非画像部に傷が付き易くなって、印刷時に傷の部分にインキが付着するいわゆる「傷汚れ」が生じ易くなる。陽極酸化処理を施された後、アルミニウム表面は必要により親水化処理が施される。本発明に使用される親水化処理としては、米国特許第2,714,066号明細書、同第3,181,461号明細書、第3,280,734号明細書及び第3,902,734号明細書に開示されているようなアルカリ金属シリケート(例えばケイ酸ナトリウム水溶液)法がある。この方法においては、支持体がケイ酸ナトリウム水溶液で浸漬処理されるか又は電解処理される。他に、特公昭36−22063号公報に開示されているフッ化ジルコン酸カリウム及び米国特許第3,276,868号明細書、同第4,153,461号明細書、同第4,689,272号明細書に開示されているようなポリビニルホスホン酸で処理する方法などが用いられる。 The treatment conditions for anodization vary depending on the electrolyte used, and thus cannot be specified in general. In general, however, the electrolyte concentration is 1 to 80% by mass solution, the liquid temperature is 5 to 70 ° C., and the current density is 5 to 60 A / dm 2. A voltage of 1 to 100 V and an electrolysis time of 10 seconds to 5 minutes are suitable. When the amount of the anodized film is less than 1.0 g / m 2 , the printing durability is insufficient, or the non-image portion of the planographic printing plate is easily damaged, and the ink adheres to the damaged portion during printing. So-called “scratch stains” easily occur. After the anodizing treatment, the aluminum surface is subjected to a hydrophilic treatment if necessary. Examples of the hydrophilization treatment used in the present invention include U.S. Pat. Nos. 2,714,066, 3,181,461, 3,280,734, and 3,902. There is an alkali metal silicate (eg, aqueous sodium silicate) method as disclosed in US Pat. In this method, the support is immersed in an aqueous sodium silicate solution or electrolytically treated. In addition, potassium fluoride zirconate disclosed in Japanese Patent Publication No. 36-22063 and U.S. Pat. Nos. 3,276,868, 4,153,461, 4,689, A method of treating with polyvinylphosphonic acid as disclosed in the specification of No. 272 is used.
本発明が適用される平版印刷版原版は、支持体上にポジ型の画像形成層を設けたものであるが、必要に応じてその間に下塗層を設けることができる。
下塗層成分としては、種々の有機化合物が用いられ、例えば、カルボキシメチルセルロース、デキストリン、アラビアガム、2−アミノエチルホスホン酸などのアミノ基を有するホスホン酸類、置換基を有してもよいフェニルホスホン酸、ナフチルホスホン酸、アルキルホスホン酸、グリセロホスホン酸、メチレンジホスホン酸及びエチレンジホスホン酸などの有機ホスホン酸、置換基を有してもよいフェニルリン酸、ナフチルリン酸、アルキルリン酸及びグリセロリン酸などの有機リン酸、置換基を有してもよいフェニルホスフィン酸、ナフチルホスフィン酸、アルキルホスフィン酸及びグリセロホスフィン酸などの有機ホスフィン酸、グリシンやβ−アラニンなどのアミノ酸類、及びトリエタノールアミンの塩酸塩などのヒドロキシ基を有するアミンの塩酸塩等から選ばれるが、2種以上混合して用いてもよい。
The lithographic printing plate precursor to which the present invention is applied has a positive type image forming layer provided on a support, and an undercoat layer can be provided between them if necessary.
As an undercoat layer component, various organic compounds are used. For example, phosphonic acids having an amino group such as carboxymethylcellulose, dextrin, gum arabic, 2-aminoethylphosphonic acid, and phenylphosphone which may have a substituent. Acid, naphthylphosphonic acid, alkylphosphonic acid, glycerophosphonic acid, organic phosphonic acid such as methylenediphosphonic acid and ethylenediphosphonic acid, phenylphosphonic acid, naphthylphosphoric acid, alkylphosphoric acid and glycerophosphoric acid optionally having substituents Of organic phosphoric acid such as phenylphosphinic acid, naphthylphosphinic acid, alkylphosphinic acid and glycerophosphinic acid, amino acids such as glycine and β-alanine, and triethanolamine which may have a substituent Hydroxy groups such as hydrochloride Selected from hydrochloride of the amine to be, but may be used by mixing two or more.
この有機下塗層は、次のような方法で設けることができる。即ち、水又はメタノール、エタノール、メチルエチルケトンなどの有機溶剤若しくはそれらの混合溶剤に上記の有機化合物を溶解させた溶液をアルミニウム板上に塗布、乾燥して設ける方法と、水又はメタノール、エタノール、メチルエチルケトンなどの有機溶剤若しくはそれらの混合溶剤に上記の有機化合物を溶解させた溶液に、アルミニウム板を浸漬して上記化合物を吸着させ、その後水などによって洗浄、乾燥して有機下塗層を設ける方法である。前者の方法では、上記の有機化合物の0.005〜10質量%の濃度の溶液を種々の方法で塗布できる。
また、後者の方法では、溶液の濃度は0.01〜20質量%、好ましくは0.05〜5質量%であり、浸漬温度は20〜90℃、好ましくは25〜50℃であり、浸漬時間は0.1秒〜20分、好ましくは2秒〜1分である。これに用いる溶液は、アンモニア、トリエチルアミン、水酸化カリウムなどの塩基性物質や、塩酸、リン酸などの酸性物質によりpH1〜12の範囲に調整することもできる。また、画像記録材料の調子再現性改良のために黄色染料を添加することもできる。
有機下塗層の被覆量は、2〜200mg/m2が適当であり、好ましくは5〜100mg/m2である。上記の被覆量が2mg/m2よりも少ないと充分な耐刷性能が得られない。また、200mg/m2より大きくても同様である。
This organic undercoat layer can be provided by the following method. That is, a method in which water or an organic solvent such as methanol, ethanol, methyl ethyl ketone, or a mixed solvent thereof is dissolved and applied on an aluminum plate and dried, and water, methanol, ethanol, methyl ethyl ketone, etc. In this method, an aluminum plate is immersed in a solution obtained by dissolving the above organic compound in an organic solvent or a mixed solvent thereof to adsorb the above compound, and then washed with water and dried to provide an organic undercoat layer. . In the former method, a solution having a concentration of 0.005 to 10% by mass of the organic compound can be applied by various methods.
In the latter method, the concentration of the solution is 0.01 to 20% by mass, preferably 0.05 to 5% by mass, the immersion temperature is 20 to 90 ° C., preferably 25 to 50 ° C., and the immersion time. Is 0.1 second to 20 minutes, preferably 2 seconds to 1 minute. The solution used for this can be adjusted to a pH range of 1 to 12 with basic substances such as ammonia, triethylamine, potassium hydroxide, and acidic substances such as hydrochloric acid and phosphoric acid. A yellow dye can also be added to improve the tone reproducibility of the image recording material.
The coating amount of the organic undercoat layer is suitably 2 to 200 mg / m 2 , preferably 5 to 100 mg / m 2 . If the coating amount is less than 2 mg / m 2 , sufficient printing durability cannot be obtained. Moreover, even if it is larger than 200 mg / m 2, it is the same.
〔露光・現像〕
上記のようにして作製されたポジ型平版印刷版原版は、通常、像露光、現像処理を施される。
像露光に用いられる光線の光源としては、近赤外から赤外領域に発光波長を持つ光源が好ましく、固体レーザ、半導体レーザが特に好ましい。
本発明の画像形成材料は焼きだめ性に優れているため、これを適用した平版印刷版原版を露光後直ちに現像処理を行わず、所定時間経過した後現像する場合でも現像性が低下することはない。このため、例えば、露光を完了した複数の平版印刷版原版をストックした後、それらをまとめて自動現像機により処理する場合などに好適であり、経時後も露光後直ちに現像処理したものと同様の優れた現像性を示す。
[Exposure / Development]
The positive lithographic printing plate precursor produced as described above is usually subjected to image exposure and development processing.
As the light source of the light beam used for image exposure, a light source having an emission wavelength in the near infrared to infrared region is preferable, and a solid laser or a semiconductor laser is particularly preferable.
Since the image forming material of the present invention is excellent in shrinkage, the development property is not lowered even when the lithographic printing plate precursor to which the image forming material is applied is not developed immediately after exposure and developed after a predetermined time. Absent. For this reason, for example, it is suitable when a plurality of lithographic printing plate precursors that have been exposed are stocked and then processed together by an automatic developing machine. Excellent developability.
本発明が適用される平版印刷版原版の現像液及び補充液としては、従来公知のアルカリ水溶液が使用できる。
例えば、ケイ酸ナトリウム、同カリウム、第3リン酸ナトリウム、同カリウム、同アンモニウム、第2リン酸ナトリウム、同カリウム、同アンモニウム、炭酸ナトリウム、同カリウム、同アンモニウム、炭酸水素ナトリウム、同カリウム、同アンモニウム、ほう酸ナトリウム、同カリウム、同アンモニウム、水酸化ナトリウム、同アンモニウム、同カリウム及び同リチウムなどの無機アルカリ塩が挙げられる。また、モノメチルアミン、ジメチルアミン、トリメチルアミン、モノエチルアミン、ジエチルアミン、トリエチルアミン、モノイソプロピルアミン、ジイソプロピルアミン、トリイソプロピルアミン、n−ブチルアミン、モノエタノールアミン、ジエタノールアミン、トリエタノールアミン、モノイソプロパノールアミン、ジイソプロパノールアミン、エチレンイミン、エチレンジアミン、ピリジンなどの有機アルカリ剤も用いられる。これらのアルカリ剤は単独若しくは2種以上を組み合わせて用いられる。
これらのアルカリ剤の中で特に好ましい現像液は、ケイ酸ナトリウム、ケイ酸カリウム等のケイ酸塩水溶液である。その理由は、ケイ酸塩の成分である酸化珪素SiO2とアルカリ金属酸化物M2Oの比率と濃度によって現像性の調節が可能となるためであり、例えば、特開昭54−62004号公報、特公昭57−7427号公報に記載されているようなアルカリ金属ケイ酸塩が有効に用いられる。
As a developer and a replenisher for a lithographic printing plate precursor to which the present invention is applied, a conventionally known alkaline aqueous solution can be used.
For example, sodium silicate, potassium, tribasic sodium phosphate, potassium, ammonium, dibasic sodium phosphate, potassium, ammonium, sodium carbonate, potassium, ammonium, sodium bicarbonate, potassium, Examples include inorganic alkali salts such as ammonium, sodium borate, potassium, ammonium, sodium hydroxide, ammonium, potassium, and lithium. Moreover, monomethylamine, dimethylamine, trimethylamine, monoethylamine, diethylamine, triethylamine, monoisopropylamine, diisopropylamine, triisopropylamine, n-butylamine, monoethanolamine, diethanolamine, triethanolamine, monoisopropanolamine, diisopropanolamine, Organic alkali agents such as ethyleneimine, ethylenediamine, and pyridine are also used. These alkali agents are used alone or in combination of two or more.
Among these alkali agents, particularly preferred developers are aqueous silicate solutions such as sodium silicate and potassium silicate. This is because the developability can be adjusted by the ratio and concentration of silicon oxide SiO 2 and alkali metal oxide M 2 O, which are silicate components. For example, Japanese Patent Laid-Open No. 54-62004 An alkali metal silicate as described in JP-B-57-7427 is effectively used.
更に、自動現像機を用いて現像する場合には、現像液よりもアルカリ強度の高い水溶液(補充液)を現像液に加えることによって、長時間現像タンク中の現像液を交換することなく、多量の平版印刷版原版を処理できることが知られている。本発明においてもこの補充方式が好ましく適用される。 Furthermore, when developing using an automatic developing machine, an aqueous solution (replenisher) having a higher alkali strength than that of the developer is added to the developer so that the developer in the developer tank is not changed for a long time. It is known that lithographic printing plate precursors can be processed. This replenishment method is also preferably applied in the present invention.
現像液及び補充液には現像性の促進や抑制、現像カスの分散及び印刷版画像部の親インキ性を高める目的で必要に応じて種々の界面活性剤や有機溶剤を添加できる。
好ましい界面活性剤としては、アニオン系、カチオン系、ノニオン系及び両性界面活性剤があげられる。更に現像液及び補充液には必要に応じて、ハイドロキノン、レゾルシン、亜硫酸、亜硫酸水素酸などの無機酸のナトリウム塩、カリウム塩等の還元剤、更に有機カルボン酸、消泡剤、硬水軟化剤を加えることもできる。
上記現像液及び補充液を用いて現像処理された印刷版は水洗水、界面活性剤等を含有するリンス液、アラビアガムや澱粉誘導体を含む不感脂化液で後処理される。本発明の画像記録材料を印刷版として使用する場合の後処理としては、これらの処理を種々組み合わせて用いることができる。
Various surfactants and organic solvents can be added to the developer and replenisher as necessary for the purpose of promoting and suppressing developability, dispersing development residue, and improving ink affinity of the printing plate image area.
Preferred surfactants include anionic, cationic, nonionic and amphoteric surfactants. If necessary, the developer and replenisher may contain reducing agents such as hydroquinone, resorcin, sulfurous acid, bisulfite, and other inorganic acids such as sodium salts and potassium salts, organic carboxylic acids, antifoaming agents, and hard water softeners. It can also be added.
The printing plate developed using the developer and the replenisher is post-treated with water-washing water, a rinsing solution containing a surfactant and the like, a desensitizing solution containing gum arabic and starch derivatives. As the post-treatment when the image recording material of the present invention is used as a printing plate, these treatments can be used in various combinations.
近年、製版・印刷業界では製版作業の合理化及び標準化のため、印刷版用の自動現像機が広く用いられている。この自動現像機は、一般に現像部と後処理部からなり、印刷版を搬送する装置と各処理液槽及びスプレー装置からなり、露光済みの印刷版を水平に搬送しながら、ポンプで汲み上げた各処理液をスプレーノズルから吹き付けて現像処理するものである。また、最近は処理液が満たされた処理液槽中に液中ガイドロールなどによって印刷版を浸漬搬送させて処理する方法も知られている。このような自動処理においては、各処理液に処理量や稼働時間等に応じて補充液を補充しながら処理することができる。また、実質的に未使用の処理液で処理するいわゆる使い捨て処理方式も適用できる。 In recent years, automatic developing machines for printing plates have been widely used in the plate making and printing industries in order to rationalize and standardize plate making operations. This automatic developing machine is generally composed of a developing unit and a post-processing unit, and includes an apparatus for transporting the printing plate, each processing liquid tank and a spray device, and each pumped up by a pump while transporting the exposed printing plate horizontally. The processing liquid is sprayed from the spray nozzle and developed. In addition, recently, a method is also known in which a printing plate is dipped and conveyed by a submerged guide roll or the like in a processing liquid tank filled with the processing liquid. In such automatic processing, each processing solution can be processed while being supplemented with a replenisher according to the processing amount, operating time, and the like. In addition, a so-called disposable processing method in which processing is performed with a substantially unused processing solution is also applicable.
本発明においては、画像露光し、現像し、水洗及び/又はリンス及び/又はガム引きして得られた平版印刷版に不必要な画像部(例えば原画フィルムのフィルムエッジ跡など)がある場合には、その不必要な画像部の消去が行なわれる。このような消去は、例えば、特公平2−13293号公報に記載されているような消去液を不必要画像部に塗布し、そのまま所定の時間放置したのちに水洗することにより行なう方法が好ましいが、特開平59−174842号公報に記載されているようなオプティカルファイバーで導かれた活性光線を不必要画像部に照射したのち現像する方法も利用できる。 In the present invention, when there is an unnecessary image portion (for example, a film edge mark of the original film) on the lithographic printing plate obtained by image exposure, development, washing and / or rinsing and / or gumming. The unnecessary image portion is erased. Such erasing is preferably performed by applying an erasing solution to an unnecessary image portion as described in Japanese Patent Publication No. 2-13293, leaving it for a predetermined time, and then washing with water. A method of developing after irradiating an unnecessary image portion with an actinic ray guided by an optical fiber as described in JP-A-59-174842 can also be used.
以上のようにして得られた平版印刷版は、所望により不感脂化ガムを塗布したのち、印刷工程に供することができるが、より一層の高耐刷力の平版印刷版としたい場合にはバーニング処理が施される。平版印刷版をバーニングする場合には、バーニング前に特公昭61−2518号、同55−28062号、特開昭62−31859号、同61−159655号の各公報に記載されているような整面液で処理することが好ましい。
その方法としては、該整面液を浸み込ませたスポンジや脱脂綿にて、平版印刷版上に塗布するか、整面液を満たしたバット中に印刷版を浸漬して塗布する方法や、自動コーターによる塗布などが適用される。また、塗布した後でスキージ、或いは、スキージローラーで、その塗布量を均一にすることは、より好ましい結果を与える。
The lithographic printing plate obtained as described above can be subjected to a printing process after applying a desensitized gum if desired. However, if it is desired to obtain a lithographic printing plate with higher printing durability, Processing is performed. In the case of burning a lithographic printing plate, before burning, an adjustment as described in JP-B-61-2518, JP-A-55-28062, JP-A-62-31859, JP-A-61-159655 is used. It is preferable to treat with a surface liquid.
As its method, with a sponge or absorbent cotton soaked with the surface-adjusting liquid, it is applied onto a lithographic printing plate, or a method in which the printing plate is immersed and applied in a vat filled with the surface-adjusting liquid, Application by an automatic coater is applied. Further, it is more preferable to make the coating amount uniform with a squeegee or a squeegee roller after coating.
整面液の塗布量は、一般に0.03〜0.8g/m2(乾燥質量)が適当である。整面液が塗布された平版印刷版は必要であれば乾燥された後、バーニングプロセッサー(例えば、富士写真フイルム(株)より販売されているバーニングプロセッサー:「BP−1300」)などで高温に加熱される。この場合の加熱温度及び時間は、画像を形成している成分の種類にもよるが、180〜300℃の範囲で1〜20分の範囲が好ましい。 In general, the amount of surface-adjusting solution applied is suitably 0.03 to 0.8 g / m 2 (dry mass). The lithographic printing plate coated with the surface-adjusting liquid is dried if necessary, and then heated to a high temperature with a burning processor (for example, burning processor “BP-1300” sold by Fuji Photo Film Co., Ltd.). Is done. In this case, the heating temperature and time are in the range of 180 to 300 ° C. and preferably in the range of 1 to 20 minutes, although depending on the type of components forming the image.
バーニング処理された平版印刷版は、必要に応じて適宜、水洗、ガム引きなどの従来より行なわれている処理を施こすことができるが水溶性高分子化合物等を含有する整面液が使用された場合にはガム引きなどのいわゆる不感脂化処理を省略することができる。この様な処理によって得られた平版印刷版はオフセット印刷機等にかけられ、多数枚の印刷に用いられる。 The lithographic printing plate that has been burned can be subjected to conventional treatments such as washing and gumming as needed, but a surface-conditioning solution containing a water-soluble polymer compound is used. In such a case, a so-called desensitizing treatment such as gumming can be omitted. The planographic printing plate obtained by such processing is applied to an offset printing machine or the like and used for printing a large number of sheets.
以下に実施例を示して本発明を具体的に説明するが、本発明はこれらに限られるものではない。 EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples.
(支持体の作製)
厚さ0.3mmのJIS−A−1050アルミニウム板を用いて、下記に示す工程を組み合わせて処理することで支持体A、B、C、Dを作製した。
(Production of support)
Supports A, B, C, and D were prepared by using a JIS-A-1050 aluminum plate having a thickness of 0.3 mm in combination with the following processes.
(a)機械的粗面化処理
比重1.12の研磨剤(ケイ砂)と水との懸濁液を研磨スラリー液としてアルミニウム板の表面に供給しながら、回転するローラ状ナイロンブラシにより機械的な粗面化を行った。研磨剤の平均粒径は8μm、最大粒径は50μmであった。ナイロンブラシの材質は6・10ナイロン、毛長50mm、毛の直径は0.3mmであった。ナイロンブラシはφ300mmのステンレス製の筒に穴をあけて密になるように植毛した。回転ブラシは3本使用した。ブラシ下部の2本の支持ローラ(φ200mm)の距離は300mmであった。ブラシローラはブラシを回転させる駆動モータの負荷が、ブラシローラをアルミニウム板に押さえつける前の負荷に対して7kWプラスになるまで押さえつけた。ブラシの回転方向はアルミニウム板の移動方向と同じであった。ブラシの回転数は200rpmであった。
(A) Mechanical surface roughening treatment While supplying a suspension of abrasive (silica sand) having a specific gravity of 1.12 and water as a polishing slurry liquid to a surface of an aluminum plate, it is mechanically rotated by a roller-like nylon brush. Roughening was performed. The average particle size of the abrasive was 8 μm, and the maximum particle size was 50 μm. The material of the nylon brush was 6 · 10 nylon, the hair length was 50 mm, and the hair diameter was 0.3 mm. The nylon brush was planted so as to be dense by making a hole in a stainless steel tube having a diameter of 300 mm. Three rotating brushes were used. The distance between the two support rollers (φ200 mm) at the bottom of the brush was 300 mm. The brush roller was pressed until the load of the drive motor for rotating the brush became 7 kW plus with respect to the load before the brush roller was pressed against the aluminum plate. The rotating direction of the brush was the same as the moving direction of the aluminum plate. The rotation speed of the brush was 200 rpm.
(b)アルカリエッチング処理
上記で得られたアルミニウム板に温度70℃のNaOH水溶液(濃度26質量%、アルミニウムイオン濃度6.5質量%)をスプレーしてエッチング処理を行い、アルミニウム板を6g/m2溶解した。その後、井水を用いてスプレーによる水洗を行った。
(B) Alkali etching treatment The aluminum plate obtained above was sprayed with an aqueous NaOH solution at a temperature of 70 ° C. (concentration 26 mass%, aluminum ion concentration 6.5 mass%) to perform an etching treatment, and the aluminum plate was 6 g / m. 2 dissolved. Thereafter, washing with water was performed using well water.
(c)デスマット処理
温度30℃の硝酸濃度1質量%水溶液(アルミニウムイオンを0.5質量%含む。)で、スプレーによるデスマット処理を行い、その後、スプレーで水洗した。前記デスマットに用いた硝酸水溶液は、硝酸水溶液中で交流を用いて電気化学的な粗面化を行う工程の廃液を用いた。
(C) Desmutting treatment The desmutting treatment was performed by spraying with a 1% by mass aqueous solution of nitric acid at a temperature of 30 ° C. (containing 0.5% by mass of aluminum ions), and then washed with water by spraying. The nitric acid aqueous solution used for the desmut was the waste liquid from the step of electrochemical surface roughening using alternating current in nitric acid aqueous solution.
(d)電気化学的粗面化処理
60Hzの交流電圧を用いて連続的に電気化学的な粗面化処理を行った。このときの電解液は、硝酸10.5g/リットル水溶液(アルミニウムイオンを5g/リットル)、温度50℃であった。交流電源波形は電流値がゼロからピークに達するまでの時間TPが0.8msec、DUTY比1:1、台形の矩形波交流を用いて、カーボン電極を対極として電気化学的な粗面化処理を行った。補助陽極にはフェライトを用いた。使用した電解槽はラジアルセルタイプのものを使用した。
電流密度は、電流のピーク値で30A/dm2、電気量はアルミニウム板が陽極時の電気量の総和で220C/dm2であった。補助陽極には電源から流れる電流の5%を分流させた。
その後、井水を用いてスプレーによる水洗を行った。
(D) Electrochemical roughening treatment An electrochemical roughening treatment was carried out continuously using an alternating voltage of 60 Hz. The electrolytic solution at this time was a nitric acid 10.5 g / liter aqueous solution (aluminum ion 5 g / liter) at a temperature of 50 ° C. The AC power supply waveform has an electrochemical surface roughening treatment using a carbon electrode as a counter electrode using a trapezoidal rectangular wave alternating current with a time TP of 0.8 msec until the current value reaches a peak from zero, a DUTY ratio of 1: 1. went. Ferrite was used for the auxiliary anode. The electrolytic cell used was a radial cell type.
The current density was 30 A / dm 2 at the peak current value, and the amount of electricity was 220 C / dm 2 in terms of the total amount of electricity when the aluminum plate was the anode. 5% of the current flowing from the power source was shunted to the auxiliary anode.
Thereafter, washing with water was performed using well water.
(e)アルカリエッチング処理
アルミニウム板をカセイソーダ濃度26質量%、アルミニウムイオン濃度6.5質量%でスプレーによるエッチング処理を32℃で行い、アルミニウム板を0.20g/m2溶解し、前段の交流を用いて電気化学的な粗面化を行ったときに生成した水酸化アルミニウムを主体とするスマット成分を除去し、また、生成したピットのエッジ部分を溶解してエッジ部分を滑らかにした。その後、井水を用いてスプレーによる水洗を行った。
(E) Alkali etching treatment The aluminum plate was sprayed at a caustic soda concentration of 26% by mass and an aluminum ion concentration of 6.5% by mass at 32 ° C. to dissolve the aluminum plate by 0.20 g / m 2 , The smut component mainly composed of aluminum hydroxide generated when electrochemical surface roughening was used was removed, and the edge portion of the generated pit was melted to smooth the edge portion. Thereafter, washing with water was performed using well water.
(f)デスマット処理
温度30℃の硝酸濃度15質量%水溶液(アルミニウムイオンを4.5質量%含む。)で、スプレーによるデスマット処理を行い、その後、井水を用いてスプレーで水洗した。前記デスマットに用いた硝酸水溶液は、硝酸水溶液中で交流を用いて電気化学的な粗面化を行う工程の廃液を用いた。
(F) Desmut treatment Desmut treatment was performed by spraying with a 15% by weight aqueous solution of nitric acid at a temperature of 30 ° C. (containing 4.5% by weight of aluminum ions), and then washed with water using well water. The nitric acid aqueous solution used for the desmut was the waste liquid from the step of electrochemical surface roughening using alternating current in nitric acid aqueous solution.
(g)電気化学的粗面化処理
60Hzの交流電圧を用いて連続的に電気化学的な粗面化処理を行った。このときの電解液は、塩酸7.5g/リットル水溶液(アルミニウムイオンを5g/リットル含む。)、温度35℃であった。交流電源波形は矩形波であり、カーボン電極を対極として電気化学的な粗面化処理を行った。補助アノードにはフェライトを用いた。電解槽はラジアルセルタイプのものを使用した。
電流密度は電流のピーク値で25A/dm2、電気量はアルミニウム板が陽極時の電気量の総和で50C/dm2であった。
その後、井水を用いてスプレーによる水洗を行った。
(G) Electrochemical surface roughening treatment An electrochemical surface roughening treatment was performed continuously using an alternating voltage of 60 Hz. The electrolytic solution at this time was a hydrochloric acid 7.5 g / liter aqueous solution (containing 5 g / liter of aluminum ions) at a temperature of 35 ° C. The AC power supply waveform was a rectangular wave, and an electrochemical surface roughening treatment was performed using a carbon electrode as a counter electrode. Ferrite was used for the auxiliary anode. The electrolytic cell used was a radial cell type.
The current density was 25 A / dm 2 at the peak current value, and the amount of electricity was 50 C / dm 2 in terms of the total amount of electricity when the aluminum plate was the anode.
Thereafter, washing with water was performed using well water.
(h)アルカリエッチング処理
アルミニウム板をカセイソーダ濃度26質量%、アルミニウムイオン濃度6.5質量%でスプレーによるエッチング処理を32℃で行い、アルミニウム板を0.10g/m2溶解し、前段の交流を用いて電気化学的な粗面化処理を行ったときに生成した水酸化アルミニウムを主体とするスマット成分を除去し、また、生成したピットのエッジ部分を溶解してエッジ部分を滑らかにした。その後、井水を用いてスプレーによる水洗を行った。
(H) Alkaline etching treatment An aluminum plate is etched by spraying at 32 ° C. with a caustic soda concentration of 26% by mass and an aluminum ion concentration of 6.5% by mass, and the aluminum plate is dissolved at 0.10 g / m 2 , so The smut component mainly composed of aluminum hydroxide generated during the electrochemical surface roughening treatment was removed, and the edge portion of the generated pit was melted to smooth the edge portion. Thereafter, washing with water was performed using well water.
(i)デスマット処理
温度60℃の硫酸濃度25質量%水溶液(アルミニウムイオンを0.5質量%含む。)で、スプレーによるデスマット処理を行い、その後、井水を用いてスプレーによる水洗を行った。
(I) Desmut treatment A desmut treatment by spraying was performed with a 25% by mass aqueous solution of sulfuric acid having a temperature of 60 ° C. (containing 0.5% by mass of aluminum ions), and then water washing by spraying was performed using well water.
(j)陽極酸化処理
電解液としては、硫酸を用いた。電解液は、いずれも硫酸濃度170g/リットル(アルミニウムイオンを0.5質量%含む。)、温度は43℃であった。その後、井水を用いてスプレーによる水洗を行った。
電流密度はともに約30A/dm2であった。最終的な酸化皮膜量は2.7g/m2であった。
(J) Anodizing treatment As the electrolytic solution, sulfuric acid was used. All electrolytes had a sulfuric acid concentration of 170 g / liter (containing 0.5 mass% of aluminum ions), and the temperature was 43 ° C. Thereafter, washing with water was performed using well water.
Both current densities were about 30 A / dm 2 . The final oxide film amount was 2.7 g / m 2 .
<支持体A>
上記(a)〜(j)の各工程を順に行い(e)工程におけるエッチング量は3.4g/m2となるようにして支持体を作製した。
<Support A>
The steps (a) to (j) were performed in order, and the support was prepared so that the etching amount in the step (e) was 3.4 g / m 2 .
<支持体B>
上記工程のうち(g)(h)(i)の工程を省略した以外は各工程を順に行い支持体を作製した。
<Support B>
Except for omitting the steps (g), (h) and (i) among the above steps, each step was performed in order to prepare a support.
<支持体C>
上記工程のうち(a)及び(g)(h)(i)の工程を省略した以外は各工程を順に行い支持体を作製した。
<Support C>
A support was prepared by sequentially performing each step except that the steps (a), (g), (h), and (i) were omitted.
<支持体D>
上記工程のうち(a)及び(d)(e)(f)の工程を省略した以外は各工程を順に行い、(g)工程における電気量の総和が450C/dm2となるようにして支持体を作製した。
<Support D>
Except for omitting the process of the above step (a) and (d) (e) (f ) performs the steps in turn, supported as total amount of electricity is 450C / dm 2 in step (g) The body was made.
上記によって得られた支持体A、B、C、Dは続けて下記の親水化処理、下塗り処理を行った。 Supports A, B, C, and D obtained as described above were subsequently subjected to the following hydrophilization treatment and undercoating treatment.
(k)アルカリ金属ケイ酸塩処理
陽極酸化処理により得られたアルミニウム支持体を温度30℃の3号ケイ酸ソーダ 1質量%水溶液の処理層中へ、10秒間、浸漬することでアルカリ金属ケイ酸塩処理(シリケート処理)を行った。その後、井水を用いたスプレーによる水洗を行った。その際のシリケート付着量は3.6mg/m2であった。
(K) Alkali metal silicate treatment Alkali metal silicate is obtained by immersing the aluminum support obtained by the anodizing treatment in a treatment layer of No. 3 sodium silicate 1 mass% aqueous solution at a temperature of 30 ° C. for 10 seconds. Salt treatment (silicate treatment) was performed. Then, the water washing by the spray using well water was performed. The amount of silicate adhering at that time was 3.6 mg / m 2 .
(下塗り処理)
上記のようにして得られたアルカリ金属ケイ酸塩処理後のアルミニウム支持体上に、下記組成の下塗り液を塗布し、80℃で15秒間乾燥した。乾燥後の被覆量は16mg/m2であった。
(Undercoating)
On the aluminum support after the alkali metal silicate treatment obtained as described above, an undercoat solution having the following composition was applied and dried at 80 ° C. for 15 seconds. The coating amount after drying was 16 mg / m 2 .
<下塗り液組成>
・下記高分子化合物 0.3g
・メタノール 100g
・水 1.0g
<Undercoat liquid composition>
・ The following polymer compound 0.3g
・ Methanol 100g
・ Water 1.0g
〔実施例1〜8、比較例1〜2〕
得られた支持体Aに、下記組成の第1層(下層)用塗布液を、ワイヤーバーで塗布したのち、150℃の乾燥オーブンで60秒間乾燥して塗布量を0.85g/m2とした。
得られた下層付き支持体に、下記組成の第2層(上層)用塗布液をワイヤーバーで塗布した。塗布後、乾燥オーブンで、145℃で70秒間の乾燥を行い、総塗布量を1.15g/m2として実施例1〜8及び比較例1〜2のポジ型平版印刷版原版を作製した。
[Examples 1-8, Comparative Examples 1-2]
A coating solution for the first layer (lower layer) having the following composition was applied to the obtained support A with a wire bar, and then dried in a drying oven at 150 ° C. for 60 seconds to obtain a coating amount of 0.85 g / m 2 . did.
A coating solution for the second layer (upper layer) having the following composition was applied to the obtained support with a lower layer with a wire bar. After coating, drying was carried out at 145 ° C. for 70 seconds in a drying oven, and positive lithographic printing plate precursors of Examples 1 to 8 and Comparative Examples 1 and 2 were prepared with a total coating amount of 1.15 g / m 2 .
<第1層(下層)用塗布液>
・共重合体1(下記により合成したもの) 2.133g
・シアニン染料A(下記構造) 0.098g
・2−メルカプト−5−メチルチオ−
1,3,4−チアジアゾール 0.030g
・シス−Δ4−テトラヒドロフタル酸無水物 0.100g
・4,4’−スルホニルジフェノール 0.090g
・p−トルエンスルホン酸 0.008g
・エチルバイオレットの対アニオンを 0.100g
6−ヒドロキシナフタレンスルホン酸に変えたもの
・3−メトキシ−4−ジアゾジフェニルアミン 0.030g
ヘキサフルオロホスフェート
・フッ素系界面活性剤 0.035g
(メガファックF−780、大日本インキ化学工業(株)製)
・メチルエチルケトン 26.6g
・1−メトキシ−2−プロパノール 13.6g
・γ−ブチロラクトン 13.8g
<First layer (lower layer) coating solution>
-Copolymer 1 (synthesized by the following) 2.133 g
・ Cyanine dye A (the following structure) 0.098g
・ 2-Mercapto-5-methylthio-
1,3,4-thiadiazole 0.030 g
・ Cis-Δ 4 -tetrahydrophthalic anhydride 0.100 g
・ 4,4'-sulfonyldiphenol 0.090g
・ 0.008 g of p-toluenesulfonic acid
・ 0.100 g of counter anion of ethyl violet
What changed to 6-hydroxynaphthalenesulfonic acid ・ 3-methoxy-4-diazodiphenylamine 0.030 g
Hexafluorophosphate / fluorine surfactant 0.035g
(Megafuck F-780, manufactured by Dainippon Ink & Chemicals, Inc.)
・ Methyl ethyl ketone 26.6g
1-methoxy-2-propanol 13.6 g
・ Γ-Butyrolactone 13.8g
<共重合体1の合成>
攪拌後、冷却管及び滴下ロートを備えた500ml三ツ口フラスコにメタクリル酸31.0g(0.36モル)、クロロギ酸エチル39.1g(0.36モル)及びアセトニトリル200mlを入れ、氷水浴で冷却しながら混合物を攪拌した。この混合物にトリエチルアミン36.4g(0.36モル)を約1時間かけて滴下ロートにより滴下した。滴下終了後、氷水浴をとり去り、室温下で30分間混合物を攪拌した。
<Synthesis of Copolymer 1>
After stirring, 31.0 g (0.36 mol) of methacrylic acid, 39.1 g (0.36 mol) of ethyl chloroformate and 200 ml of acetonitrile were placed in a 500 ml three-necked flask equipped with a condenser and a dropping funnel, and cooled in an ice-water bath. The mixture was stirred while. To this mixture, 36.4 g (0.36 mol) of triethylamine was dropped with a dropping funnel over about 1 hour. After completion of the dropwise addition, the ice-water bath was removed, and the mixture was stirred at room temperature for 30 minutes.
この反応混合物に、p−アミノベンゼンスルホンアミド51.7g(0.30モル)を加え、油浴にて70℃に温めながら混合物を1時間攪拌した。反応終了後、この混合物を水1リットルにこの水を攪拌しながら投入し、30分間得られた混合物を攪拌した。この混合物をろ過して析出物を取り出し、これを水500mlでスラリーにした後、このスラリーをろ過し、得られた固体を乾燥することによりN−(p−アミノスルホニルフェニル)メタクリルアミドの白色固体が得られた(収量46.9g)。 To this reaction mixture, 51.7 g (0.30 mol) of p-aminobenzenesulfonamide was added, and the mixture was stirred for 1 hour while warming to 70 ° C. in an oil bath. After completion of the reaction, the mixture was added to 1 liter of water with stirring, and the resulting mixture was stirred for 30 minutes. The mixture was filtered to take out a precipitate, which was slurried with 500 ml of water, then the slurry was filtered, and the obtained solid was dried to dry a white solid of N- (p-aminosulfonylphenyl) methacrylamide. Was obtained (yield 46.9 g).
次に、攪拌機、冷却管及び滴下ロートを備えた20ml三ツ口フラスコに、N−(p−アミノスルホニルフェニル)メタクリルアミド4.61g(0.0192モル)、メタクリル酸エチル2.58g(0.0258モル)、アクリロニトリル0.80g(0.015モル)及びN,N−ジメチルアセトアミド20gを入れ、湯水浴により65℃に加熱しながら混合物を攪拌した。この混合物に、重合開始剤として2,2’−アゾビス(2,4−ジメチルバレロニトリル)(商品名:「V−65」、和光純薬(株)製)0.15gを加え65℃に保ちながら窒素気流下2時間混合物を攪拌した。この反応混合物にさらにN−(p−アミノスルホニルフェニル)メタクリルアミド4.61g、メタクリル酸メチル2.58g、アクリロニトリル0.80g、N,N−ジメチルアセトアミド20g及び「V−65」0.15gの混合物を2時間かけて滴下ロートにより滴下した。滴下終了後さらに65℃で2時間得られた混合物を攪拌した。反応終了後メタノール40gを混合物に加え、冷却し、得られた混合物を水2リットルにこの水を攪拌しながら投入し、30分混合物を攪拌した後、析出物をろ過により取り出し、乾燥することにより15gの白色固体を得た。ゲルパーミエーションクロマトグラフィーによりこの特定の共重合体1の重量平均分子量(ポリスチレン標準)を測定したところ54,000であった。 Next, 4.61 g (0.0192 mol) of N- (p-aminosulfonylphenyl) methacrylamide and 2.58 g of ethyl methacrylate (0.0258 mol) were added to a 20 ml three-necked flask equipped with a stirrer, a condenser and a dropping funnel. ), 0.80 g (0.015 mol) of acrylonitrile and 20 g of N, N-dimethylacetamide were added, and the mixture was stirred while heating to 65 ° C. with a hot water bath. To this mixture, 0.15 g of 2,2′-azobis (2,4-dimethylvaleronitrile) (trade name: “V-65”, manufactured by Wako Pure Chemical Industries, Ltd.) was added as a polymerization initiator and maintained at 65 ° C. The mixture was stirred for 2 hours under a nitrogen stream. This reaction mixture was further mixed with 4.61 g of N- (p-aminosulfonylphenyl) methacrylamide, 2.58 g of methyl methacrylate, 0.80 g of acrylonitrile, 20 g of N, N-dimethylacetamide and 0.15 g of “V-65”. Was dropped by a dropping funnel over 2 hours. After completion of the dropwise addition, the resulting mixture was further stirred at 65 ° C. for 2 hours. After completion of the reaction, 40 g of methanol was added to the mixture, cooled, and the resulting mixture was poured into 2 liters of water while stirring the water. After stirring the mixture for 30 minutes, the precipitate was removed by filtration and dried. 15 g of a white solid was obtained. It was 54,000 when the weight average molecular weight (polystyrene standard) of this specific copolymer 1 was measured by the gel permeation chromatography.
<第2層(上層)用塗布液>
・メタクリル酸エチルと2−メタクリロイロキシエチルコハク酸 0.030g
の共重合体(モル比67:33、重量平均分子量92,000)
・特定ノボラック樹脂(表1に記載の化合物) 0.300g
・スルホニウム塩(表1に記載の化合物) 0.1g
・シアニン染料A(前記構造) 0.015g
・エチルバイオレットの対アニオンを 0.012g
6−ヒドロキシナフタレンスルホン酸に変えたもの
・フッ素系界面活性剤 0.022g
(メガファックF−780、大日本インキ化学工業(株)製)
・メチルエチルケトン 13.1g
・1−メトキシ−2−プロパノール 6.79g
<Second layer (upper layer) coating solution>
-Ethyl methacrylate and 2-methacryloyloxyethyl succinic acid 0.030 g
Copolymer (molar ratio 67:33, weight average molecular weight 92,000)
・ Specific novolak resin (compound described in Table 1) 0.300 g
・ Sulphonium salt (compound described in Table 1) 0.1 g
・ Cyanine dye A (the above structure) 0.015 g
・ 0.012g of counter anion of ethyl violet
What changed to 6-hydroxynaphthalenesulfonic acid ・ Fluorosurfactant 0.022g
(Megafuck F-780, manufactured by Dainippon Ink & Chemicals, Inc.)
・ Methyl ethyl ketone 13.1g
1-methoxy-2-propanol 6.79g
[平版印刷版原版の評価]
平版印刷版原版の評価は、現像ラチチュード、感度、及び、焼きだめ性の各項目について行った。評価方法の詳細は下記の通りである。
[Evaluation of lithographic printing plate precursor]
The evaluation of the lithographic printing plate precursor was conducted for each of the development latitude, sensitivity, and shrinkability. Details of the evaluation method are as follows.
1.現像ラチチュード
平版印刷版原版を、温度25℃相対湿度50%の条件下で5日間保存した後に、Creo社製Trendsetter3244 VX にてビーム強度9.0W、ドラム回転速度130rpmでテストパターンを画像状に描き込みを行った。
その後、下記A組成及びB組成のアルカリ現像液における水の質量比率を変更することにより、希釈率を変えて電導度を変化させたものを仕込んだ富士写真フイルム(株)製PSプロセッサー900Hを用い、液温を30℃に保ち、現像時間22秒で現像した。この時、画像部が溶出されず、かつ、現像不良の感光層残膜に起因する汚れや着色がなく良好に現像が行えた現像液の電導度の一番高いものと、一番低い物の差を現像ラチチュードとして評価した。
1. Development Latitude A lithographic printing plate precursor is stored for 5 days under conditions of a temperature of 25 ° C. and a relative humidity of 50%. I did.
Thereafter, a PS processor 900H manufactured by Fuji Photo Film Co., Ltd. was used, in which the electric conductivity was changed by changing the mass ratio of water in the alkaline developer of the following A composition and B composition. The liquid temperature was kept at 30 ° C., and development was performed with a development time of 22 seconds. At this time, the developer having the highest conductivity and the lowest conductivity of the developer in which the image portion was not eluted and the development was successfully performed without contamination and coloring caused by the poorly developed photosensitive layer residual film. The difference was evaluated as development latitude.
<アルカリ現像液A組成>
・SiO2・K2O(K2O/SiO2=1/1(モル比)) 4.0質量%
・クエン酸 0.5質量%
・ポリエチレングリコールラウリルエーテル 0.5質量%
(重量平均分子量1,000)
・水 95.0質量%
<アルカリ現像液B組成>
・Dソルビット 2.5質量%
・水酸化ナトリウム 0.85質量%
・ポリエチレングリコールラウリルエーテル 0.5質量%
(重量平均分子量1,000)
・水 96.15質量%
<Alkali developer A composition>
・ SiO 2 · K 2 O (K 2 O / SiO 2 = 1/1 (molar ratio)) 4.0% by mass
・ Citric acid 0.5% by mass
・ Polyethylene glycol lauryl ether 0.5% by mass
(Weight average molecular weight 1,000)
・ Water 95.0 mass%
<Alkali developer B composition>
・ D sorbit 2.5% by mass
-Sodium hydroxide 0.85 mass%
・ Polyethylene glycol lauryl ether 0.5% by mass
(Weight average molecular weight 1,000)
・ Water 96.15% by mass
2.感度
平版印刷用原板に対し、Creo社製Trendsetter3244 VX にて露光エネルギーを変えてテストパターンを画像状に描き込みを行った。
その後、上記現像ラチチュードの評価において画像部が溶出されず、かつ、現像不良の感光層残膜に起因する汚れや着色がなく良好に現像が行えた現像液の電導度の一番高いものと、一番低い物との中間(平均値)の電導度のアルカリ現像液で現像し、この現像液で非画像部が現像できる露光量(ドラム回転速度130rpmのときのビーム強度)を測定し、感度とした。数値が小さいほど高感度であると評価する。
2. Sensitivity A test pattern was drawn on the lithographic printing plate by changing the exposure energy with a Trendsetter 3244 VX manufactured by Creo.
Thereafter, in the evaluation of the development latitude, the image portion is not eluted, and the developer having the highest electrical conductivity of the developer that can be satisfactorily developed without being stained or colored due to a poorly developed photosensitive layer residual film; Developed with an alkaline developer having an intermediate (average) conductivity with the lowest one, and measured the exposure amount (beam intensity at a drum rotation speed of 130 rpm) that can develop a non-image area with this developer. It was. The smaller the numerical value, the higher the sensitivity.
3.焼きだめ性
露光後、25℃相対湿度70%の環境で一時間保存した後に、上記感度評価と同様の評価を行い、露光直後からの感度の低下度合いを焼きだめ性の指針とした。なお、数値は露光1時間後の感度を表し、当該数値が露光直後の感度に近いほど焼きだめ性が良好であると評価する。
3. After exposure, after storage for 1 hour in an environment at 25 ° C. and a relative humidity of 70%, the same evaluation as the sensitivity evaluation was performed, and the degree of decrease in sensitivity immediately after the exposure was used as a guideline for the storage characteristics. The numerical value represents the sensitivity after 1 hour of exposure, and the closer the numerical value is to the sensitivity immediately after the exposure, the better the shrinkage.
<実施例1、比較例1〜2の平版印刷版原版の評価>
実施例1及び比較例1〜2の各平版印刷版原版について、現像ラチチュード、感度、及び焼きだめ性を、上記した方法により評価した。現像液は現像液Bを用いた。その結果を表1に示す。
<Evaluation of planographic printing plate precursors of Example 1 and Comparative Examples 1 and 2>
Each planographic printing plate precursor of Example 1及 beauty Comparative Examples 1-2, development latitude, sensitivity, and baked sump property was evaluated by the method described above. Developer B was used as the developer. The results are shown in Table 1.
なお、下記表1に記載された(A)特定ノボラック樹脂(P1、P2)及び本発明の範囲外のノボラック樹脂(C1)の詳細は以下に示すとおりである。
ノボラック樹脂P1:フェノールクレゾール−ホルムアルデヒドノボラック
(フェノール:m−クレゾール:p−クレゾール=30:30:40、
重量平均分子量:5500)
ノボラック樹脂P2:フェノールクレゾール−ホルムアルデヒドノボラック
(フェノール:m−クレゾール:p−クレゾール=60:30:10、
重量平均分子量:7700)
ノボラック樹脂C1:クレゾール−ホルムアルデヒドノボラック
(m−クレゾール:p−クレゾール=60:40、重量平均分子量:5000)
The details of (A) specific novolak resins (P1, P2) and novolak resin (C1) outside the scope of the present invention described in Table 1 below are as shown below.
Novolac resin P1: phenolcresol-formaldehyde novolac
(Phenol: m-cresol: p-cresol = 30: 30: 40,
(Weight average molecular weight: 5500)
Novolac resin P2: phenol cresol-formaldehyde novolac
(Phenol: m-cresol: p-cresol = 60: 30: 10,
Weight average molecular weight: 7700)
Novolak resin C1: Cresol-formaldehyde novolak (m-cresol: p-cresol = 60: 40, weight average molecular weight: 5000)
比較例2においては、スルホニウム塩に換えて、以下に示すアンモニウム化合物A(アンモニウムA)を添加した。 In Comparative Example 2, ammonium compound A (ammonium A) shown below was added instead of the sulfonium salt.
表1に示されるように、実施例1の平版印刷版原版は、現像ラチチュード及び感度を維持しながら、焼きだめ性の改良を実現していることが分かる。一方、本発明の特定ノボラック樹脂に換えてフェノールを構造単位として含まないノボラック樹脂を用いた比較例1、スルホニウム塩に換えてアンモニウム塩を用いた比較例2はいずれも、現像ラチチュード及び焼きだめ性が実施例に比べて劣っていた。 As shown in Table 1, it can be seen that the lithographic printing plate precursor of Example 1 achieves improved printing quality while maintaining development latitude and sensitivity. On the other hand, in both Comparative Example 1 using a novolak resin containing no phenol as a structural unit in place of the specific novolak resin of the present invention and Comparative Example 2 using an ammonium salt in place of the sulfonium salt, development latitude and print-out property are improved. However, it was inferior to the Example.
(実施例9〜16、比較例3〜4)
得られた支持体Cに、下記組成の第1層(下層)用塗布液を、ワイヤーバーで塗布したのち、130℃の乾燥オーブンで60秒間乾燥して塗布量を0.60g/m2とした。
得られた下層付き支持体に、下記組成の第2層(上層)用塗布液をワイヤーバーで塗布した。塗布後、乾燥オーブンで、150℃で60秒間の乾燥を行い、総塗布量を1.25g/m2として実施例9〜16及び比較例3〜4のポジ型平版印刷版原版を作製した。
(Examples 9-16, Comparative Examples 3-4)
A coating solution for the first layer (lower layer) having the following composition was applied to the obtained support C with a wire bar, and then dried in a drying oven at 130 ° C. for 60 seconds to obtain a coating amount of 0.60 g / m 2 . did.
A coating solution for the second layer (upper layer) having the following composition was applied to the obtained support with a lower layer with a wire bar. After coating, drying was performed at 150 ° C. for 60 seconds in a drying oven, and positive lithographic printing plate precursors of Examples 9 to 16 and Comparative Examples 3 to 4 were prepared with a total coating amount of 1.25 g / m 2 .
<第1層(下層)用塗布液>
・共重合体1 2.133g
・シアニン染料A(前記構造) 0.098g
・2−メルカプト−5−メチルチオ
−1,3,4−チアジアゾール 0.030g
・シス−Δ4−テトラヒドロフタル酸無水物 0.100g
・4,4’−スルホニルジフェノール 0.090g
・p−トルエンスルホン酸 0.008g
・エチルバイオレットの対アニオンを 0.100g
6−ヒドロキシナフタレンスルホン酸に変えたもの
・3−メトキシ−4−ジアゾジフェニルアミン 0.030g
ヘキサフルオロホスフェート
・フッ素系界面活性剤 0.035g
(メガファックF−780、大日本インキ化学工業(株)製)
・メチルエチルケトン 26.6g
・1−メトキシ−2−プロパノール 13.6g
・ジメチルスルホキシド 13.8g
<First layer (lower layer) coating solution>
・ Copolymer 1 2.133 g
・ Cyanine dye A (the above structure) 0.098 g
・ 2-Mercapto-5-methylthio
-1,3,4-thiadiazole 0.030 g
・ Cis-Δ 4 -tetrahydrophthalic anhydride 0.100 g
・ 4,4'-sulfonyldiphenol 0.090g
・ 0.008 g of p-toluenesulfonic acid
・ 0.100 g of counter anion of ethyl violet
What changed to 6-hydroxynaphthalenesulfonic acid ・ 3-methoxy-4-diazodiphenylamine 0.030 g
Hexafluorophosphate / fluorine surfactant 0.035g
(Megafuck F-780, manufactured by Dainippon Ink & Chemicals, Inc.)
・ Methyl ethyl ketone 26.6g
1-methoxy-2-propanol 13.6 g
・ Dimethylsulfoxide 13.8g
<第2層(上層)用塗布液>
・メタクリル酸エチルと2−メタクリロイロキシエチルコハク酸 0.030g
の共重合体(モル比67:33、重量平均分子量92,000)
・ノボラック樹脂(表2に記載の化合物) 0.300g
・スルホニウム塩(表2に記載の化合物) 0.016g
・シアニン染料A(前記構造) 0.015g
・フッ素系界面活性剤 0.022g
(メガファックF−780、大日本インキ化学工業(株)製)
・メチルエチルケトン 13.1g
・1−メトキシ−2−プロパノール 6.79g
<Second layer (upper layer) coating solution>
-Ethyl methacrylate and 2-methacryloyloxyethyl succinic acid 0.030 g
Copolymer (molar ratio 67:33, weight average molecular weight 92,000)
・ Novolak resin (compound described in Table 2) 0.300 g
・ Sulphonium salt (compound described in Table 2) 0.016 g
・ Cyanine dye A (the above structure) 0.015 g
・ Fluorine surfactant 0.022g
(Megafuck F-780, manufactured by Dainippon Ink & Chemicals, Inc.)
・ Methyl ethyl ketone 13.1g
1-methoxy-2-propanol 6.79g
<実施例2〜3及び比較例3〜4の評価>
得られた実施例2〜3及び比較例3〜4の各平版印刷版原版について、実施例1と同様の方法で評価を行った。現像液は現像液Bを用いた。その結果を表2に示す。
なお、下記表2に記載の(A)特定ノボラック樹脂(P3)の詳細は以下に示すとおりである。
ノボラック樹脂P3:フェノールクレゾール−ホルムアルデヒドノボラック
(フェノール:m−クレゾール:p−クレゾール=40:40:20、
重量平均分子量:5200)
比較例3に用いたノボラック樹脂C1は比較例1で用いたものと同様であり、比較例4においてスルホニウム塩に換えて用いたアンモニウム化合物A(アンモニウムA)は、比較例2において用いたものと同様である。
<Evaluation of Examples 2-3 and Comparative Examples 3-4>
The obtained planographic printing plate precursors of Examples 2 to 3 and Comparative Examples 3 to 4 were evaluated in the same manner as in Example 1. Developer B was used as the developer. The results are shown in Table 2.
The details of (A) the specific novolak resin (P 3) shown in the following Table 2 is as shown below.
Novolac resin P3: phenol cresol-formaldehyde novolac
(Phenol: m-cresol: p-cresol = 40: 40: 20,
Weight average molecular weight: 5200 )
The novolak resin C1 used in Comparative Example 3 is the same as that used in Comparative Example 1, and the ammonium compound A (ammonium A) used in place of the sulfonium salt in Comparative Example 4 is the same as that used in Comparative Example 2. It is the same.
表2に示されるように、実施例のサンプルは、現像ラチチュード及び感度を維持しながら、焼きだめ性改良を実現していることが分かる。一方、本発明に係る特定ノボラック樹脂、或いは、スルホニウム塩を添加しなかった比較例3,4はいずれも現像ラチチュード及び焼きだめ性が劣っていた。
実施例2〜3、比較例3、4と実施例1、比較例1、2との対比において、画像形成層が重層の場合でも、単層の場合と同様に本発明の優れた効果が得られることがわかった。また、画像形成層を重層とすることで、感度、現像ラチチュードの一層の向上が見られた。
As shown in Table 2, it can be seen that the samples of the examples achieve improvement in the shrinkage while maintaining the development latitude and sensitivity. On the other hand, Comparative Examples 3 and 4 to which the specific novolak resin or the sulfonium salt according to the present invention was not added were inferior in development latitude and shrinkage.
Examples 2-3, Comparative Examples 3 and 4 Example 1, in comparison with the Comparative Examples 1 and 2, even when the image forming layer is a multilayer, excellent effects are obtained in the case of a single layer similarly to the present invention I found out that Further, by using the image forming layer as a multilayer, further improvement in sensitivity and development latitude was observed.
(実施例4〜7、比較例5〜6)
得られた支持体Dに、下記組成の第1層(下層)用塗布液を、ワイヤーバーで塗布したのち、150℃の乾燥オーブンで60秒間乾燥して塗布量を0.81g/m2とした。
得られた下層付き支持体に、下記組成の第2層(上層)用塗布液をワイヤーバーで塗布した。塗布後、乾燥オーブンで、150℃で60秒間の乾燥を行い、総塗布量を0.99g/m2として実施例4〜7及び比較例5〜6のポジ型平版印刷版原版を作製した。
(Examples 4-7 , Comparative Examples 5-6)
A coating solution for the first layer (lower layer) having the following composition was applied to the obtained support D with a wire bar, and then dried in a drying oven at 150 ° C. for 60 seconds to obtain a coating amount of 0.81 g / m 2 . did.
A coating solution for the second layer (upper layer) having the following composition was applied to the obtained support with a lower layer with a wire bar. After coating, drying was performed at 150 ° C. for 60 seconds in a drying oven, and positive lithographic printing plate precursors of Examples 4 to 7 and Comparative Examples 5 to 6 were prepared with a total coating amount of 0.99 g / m 2 .
<第1層(下層)用塗布液>
・前記共重合体1 2.133g
・シアニン染料A(前記構造) 0.098g
・シス−Δ4−テトラヒドロフタル酸無水物 0.110g
・4,4’−スルホニルジフェノール 0.090g
・p−トルエンスルホン酸 0.008g
・エチルバイオレットの対アニオンを 0.100g
6−ヒドロキシナフタレンスルホン酸に変えたもの
・3−メトキシ−4−ジアゾジフェニルアミン 0.030g
ヘキサフルオロホスフェート
・フッ素系界面活性剤 0.035g
(メガファックF−780、大日本インキ化学工業(株)製)
・メチルエチルケトン 26.6g
・1−メトキシ−2−プロパノール 13.6g
・γ−ブチロラクトン 13.8g
<First layer (lower layer) coating solution>
-Copolymer 1 2.133 g
・ Cyanine dye A (the above structure) 0.098 g
・ Cis-Δ 4 -tetrahydrophthalic anhydride 0.110 g
・ 4,4'-sulfonyldiphenol 0.090g
・ 0.008 g of p-toluenesulfonic acid
・ 0.100 g of counter anion of ethyl violet
What changed to 6-hydroxynaphthalenesulfonic acid ・ 3-methoxy-4-diazodiphenylamine 0.030 g
Hexafluorophosphate / fluorine surfactant 0.035g
(Megafuck F-780, manufactured by Dainippon Ink & Chemicals, Inc.)
・ Methyl ethyl ketone 26.6g
1-methoxy-2-propanol 13.6 g
・ Γ-Butyrolactone 13.8g
<第2層(上層)用塗布液>
・メタクリル酸エチルと2−メタクリロイロキシエチルコハク酸 0.030g
の共重合体
(モル比67:33、重量平均分子量92,000)
・ノボラック樹脂(表3に記載の化合物) 0.300g
・スルホニウム塩(表3に記載の化合物) 0.020g
・シアニン染料A(前記構造) 0.015g
・フッ素系界面活性剤 0.022g
(メガファックF−780、大日本インキ化学工業(株)製)
・メチルエチルケトン 13.1g
・1−メトキシ−2−プロパノール 6.79g
<Second layer (upper layer) coating solution>
-Ethyl methacrylate and 2-methacryloyloxyethyl succinic acid 0.030 g
Copolymer (molar ratio 67:33, weight average molecular weight 92,000)
・ Novolak resin (compound described in Table 3) 0.300 g
・ Sulphonium salt (compound described in Table 3) 0.020 g
・ Cyanine dye A (the above structure) 0.015 g
・ Fluorine surfactant 0.022g
(Megafuck F-780, manufactured by Dainippon Ink & Chemicals, Inc.)
・ Methyl ethyl ketone 13.1g
1-methoxy-2-propanol 6.79g
<実施例4〜7及び比較例5〜6の評価>
得られた平版印刷版原版を前記の方法で評価を行った。現像液は現像液Aを用いた。その結果を表3に示す。
なお、下記表3に記載された(A)特定ノボラック樹脂(P5、P6)及び本発明の範囲外のノボラック樹脂(C2)の詳細は以下に示すとおりである。
ノボラック樹脂P5:フェノールクレゾール−ホルムアルデヒドノボラック
(フェノール:m−クレゾール:p−クレゾール=40:40:20、
重量平均分子量:8000)
ノボラック樹脂P6:フェノールクレゾール−ホルムアルデヒドノボラック
(フェノール:m−クレゾール:p−クレゾール=60:30:10、
重量平均分子量:7700)
ノボラック樹脂C2:クレゾール−ホルムアルデヒドノボラック
(m−クレゾール:p−クレゾール=70:30、重量平均分子量:10000)
<Evaluation of Examples 4 to 7 and Comparative Examples 5 to 6>
The obtained lithographic printing plate precursor was evaluated by the method described above. Developer A was used as the developer. The results are shown in Table 3.
The details of (A) specific novolak resins (P5, P6) and novolak resin (C2) outside the scope of the present invention described in Table 3 below are as shown below.
Novolak resin P5: phenol cresol-formaldehyde novolak
(Phenol: m-cresol: p-cresol = 40: 40: 20,
Weight average molecular weight: 8000)
Novolak resin P 6 : phenol cresol-formaldehyde novolak
(Phenol: m-cresol: p-cresol = 60: 30: 10,
Weight average molecular weight: 7700)
Novolak resin C2: Cresol-formaldehyde novolak (m-cresol: p-cresol = 70: 30, weight average molecular weight: 10,000)
比較例6においては、スルホニウム塩に換えて、以下に示すアンモニウム化合物B(アンモニウムB)を用いた。 In Comparative Example 6, ammonium compound B (ammonium B) shown below was used in place of the sulfonium salt.
表3に示されるように、実施例4〜7の平版印刷版原版は、現像ラチチュード及び感度を維持しながら、焼きだめ性改良を実現していることが分かる。一方、本発明に係る特定ノボラック樹脂、或いは、スルホニウム塩を添加しなかった比較例5,6はいずれも焼きだめ性が極めて劣っていることがわかる。 As shown in Table 3, it can be seen that the lithographic printing plate precursors of Examples 4 to 7 achieve improvement in the shrinkage while maintaining the development latitude and sensitivity. On the other hand, it can be seen that the comparative nos. 5 and 6 to which the specific novolak resin or the sulfonium salt according to the present invention was not added are extremely inferior in shrinkage.
(実施例8〜10、比較例7〜8)
得られた支持体Dに以下の画像形成層塗布液を塗布し、150℃で1分間乾燥して、画像形成層を形成し、実施例8〜10及び比較例7〜8の平版印刷版原版を得た。乾燥後の塗布量は1.55g/m2であった。
(Examples 8 to 10 , Comparative Examples 7 to 8)
The following image forming layer coating solution was applied to the obtained support D, dried at 150 ° C. for 1 minute to form an image forming layer, and the planographic printing plate precursors of Examples 8 to 10 and Comparative Examples 7 to 8 Got. The coating amount after drying was 1.55 g / m 2 .
<画像形成層塗布液>
・ノボラック樹脂(表4に記載の化合物) 1.0g
・スルホニウム塩(表4記載の化合物) 0.05g
・シアニン染料A(前記構造) 0.05g
・ビクトリアピュアブルーBOHの対アニオンを
1−ナフタレンスルホン酸アニオンにした染料 0.01g
・フッ素系界面活性剤 0.05g
(メガファックF−177、大日本インキ化学工業(株)製)
・メチルエチルケトン 9.0g
・1−メトキシ−2−プロパノール 9.0g
<Image forming layer coating solution>
・ Novolak resin (compound described in Table 4) 1.0 g
・ Sulphonium salt (compound described in Table 4) 0.05 g
・ Cyanine dye A (the above structure) 0.05 g
0.01 g of dye having 1-naphthalenesulfonic acid anion as the counter anion of Victoria Pure Blue BOH
・ Fluorosurfactant 0.05g
(Megafuck F-177, manufactured by Dainippon Ink & Chemicals, Inc.)
・ Methyl ethyl ketone 9.0g
・ 9.0 g of 1-methoxy-2-propanol
<実施例8〜10及び比較例7〜8の評価>
得られた実施例8〜10及び比較例7〜8の各平版印刷版原版に対して、実施例1と同様の方法で評価を行った。現像液は現像液Aを用いた。その結果を表4に示す。
なお、下記表4に記載の(A)特定ノボラック樹脂(P7、P8)の詳細は以下に示すとおりである。
ノボラック樹脂P7:フェノールクレゾール−ホルムアルデヒドノボラック
(フェノール:m−クレゾール:p−クレゾール=20:60:20、
重量平均分子量:10200)
ノボラック樹脂P8:フェノールキシレノール−ホルムアルデヒドノボラック
(フェノール:2,5−キシレノール=60:40、重量平均分子量:11000)
比較例7に用いたノボラック樹脂C2は比較例5で用いたものと同様であり、比較例8においてスルホニウム塩に換えて用いたアンモニウム化合物B(アンモニウムB)は、比較例6において用いたものと同様である。
<Evaluation of Examples 8 to 10 and Comparative Examples 7 to 8>
The obtained lithographic printing plate precursors of Examples 8 to 10 and Comparative Examples 7 to 8 were evaluated in the same manner as in Example 1. Developer A was used as the developer. The results are shown in Table 4.
The details of (A) specific novolak resins (P7, P8) described in Table 4 below are as shown below.
Novolak resin P7: phenol cresol-formaldehyde novolak
(Phenol: m-cresol: p-cresol = 20: 60: 20,
(Weight average molecular weight: 10200)
Novolak resin P8: phenol xylenol-formaldehyde novolak (phenol: 2,5-xylenol = 60: 40, weight average molecular weight: 11000)
The novolak resin C2 used in Comparative Example 7 is the same as that used in Comparative Example 5, and the ammonium compound B (ammonium B) used in place of the sulfonium salt in Comparative Example 8 is the same as that used in Comparative Example 6. It is the same.
表4に示されるように、実施例8〜10の平版印刷版原版は、現像ラチチュード及び感度を維持しながら、焼きだめ性改良を実現していることが分かる。一方、本発明に係る特定ノボラック樹脂、或いは、スルホニウム塩を添加しなかった比較例7、8はいずれも現像ラチチュード及び焼きだめ性が劣っていた。 As shown in Table 4, it can be seen that the lithographic printing plate precursors of Examples 8 to 10 achieve improvement in the shrinkage while maintaining the development latitude and sensitivity. On the other hand, Comparative Examples 7 and 8 to which no specific novolak resin or sulfonium salt according to the present invention was added were inferior in development latitude and shrinkage.
Claims (2)
上記一般式(II)中、R21、R22及びR23は、それぞれ同じでも異なっていてもよく、ハロゲン原子、ニトロ基、炭素原子数12個以下のアルキル基、炭素原子数12個以下のアルコキシ基、及び炭素原子数12個以下のアリールオキシ基から選択される置換基を有する炭素原子数20個以下の炭化水素基を示す。(Z21)-はpKa<5であるスルホン酸化合物の残基又はpKa<5であるカルボン酸化合物の残基を示す。 An image forming layer containing (A) a novolac type phenol resin containing phenol as a structural unit, (B) a photothermal conversion agent, and (C) a sulfonium salt represented by the following general formula (II) on a support. A positive-type image forming material.
In the general formula (II), R 21, R 22 and R 23, rather it may also be the same as or different from each other, a halogen atom, a nitro group, having 12 or less carbon atoms alkyl group, having 12 or less carbon atoms And a hydrocarbon group having 20 or less carbon atoms having a substituent selected from an aryloxy group having 12 or less carbon atoms. (Z 21 ) − represents a residue of a sulfonic acid compound having pKa <5 or a residue of a carboxylic acid compound having pKa <5 .
上記一般式(III)中、(Z21)-はpKa<5であるスルホン酸化合物の残基又はpKa<5であるカルボン酸化合物の残基を示す。 2. The positive image forming material according to claim 1, wherein the sulfonium salt represented by the general formula (II) is a sulfonium salt represented by the following general formula (III).
In the above general formula (III), (Z 21 ) − represents a residue of a sulfonic acid compound in which pKa <5 or a residue of a carboxylic acid compound in which pKa <5 .
Priority Applications (5)
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JP2004075121A JP4295648B2 (en) | 2004-03-16 | 2004-03-16 | Image forming material |
AT05005635T ATE355183T1 (en) | 2004-03-16 | 2005-03-15 | POSITIVE WORKING PHOTOSENSITIVE COMPOSITION |
DE602005000609T DE602005000609T2 (en) | 2004-03-16 | 2005-03-15 | Positive-working photosensitive composition |
EP05005635A EP1577111B1 (en) | 2004-03-16 | 2005-03-15 | Positive-type photosensitive composition |
US11/081,087 US20050214675A1 (en) | 2004-03-16 | 2005-03-16 | Positive-type photosensitive composition |
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JP2004075121A JP4295648B2 (en) | 2004-03-16 | 2004-03-16 | Image forming material |
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JP4295648B2 true JP4295648B2 (en) | 2009-07-15 |
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