JP3843933B2 - Polishing pad, polishing apparatus and polishing method - Google Patents

Polishing pad, polishing apparatus and polishing method Download PDF

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Publication number
JP3843933B2
JP3843933B2 JP2002327853A JP2002327853A JP3843933B2 JP 3843933 B2 JP3843933 B2 JP 3843933B2 JP 2002327853 A JP2002327853 A JP 2002327853A JP 2002327853 A JP2002327853 A JP 2002327853A JP 3843933 B2 JP3843933 B2 JP 3843933B2
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polishing
polishing pad
holes
polished
long
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JP2003300149A (en
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俊一 澁木
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Sony Corp
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Sony Corp
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Priority to JP2002327853A priority Critical patent/JP3843933B2/en
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Priority to TW092102513A priority patent/TWI266673B/en
Priority to PCT/JP2003/001305 priority patent/WO2003067641A1/en
Priority to KR10-2004-7011783A priority patent/KR20040079965A/en
Priority to US10/503,413 priority patent/US20050153633A1/en
Priority to CNB038033631A priority patent/CN100365773C/en
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Priority to US11/725,679 priority patent/US20070190911A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、研磨パッド、研磨装置および研磨方法に関し、詳しくは複数の長孔が設けられた研磨パッド、その研磨パッドを用いた研磨装置およびその研磨パッドを用いた研磨方法に関する。
【０００２】
【従来の技術】
従来技術１として、表面に溝が設けられている研磨パッドが市販されている。例えばロデールニッタ社製の研磨パッドＩＣ１０００−Ａ２２がある。図６に示すように、この研磨パッド６１は、研磨パッド表面６１Ｓに幅２ｍｍの溝６２が約２ｃｍピッチで格子状に形成されているものである。なお、平面図では溝６２の図示を省略した。
【０００３】
従来技術２として、表面に複数の小孔（例えば直径が１．８ｍｍの小孔）が設けられている市販の研磨パッドがある。一例としてロデールニッタ社製の研磨パッドＩＣ１０００（ｐ）が知られている。
【０００４】
従来技術３として、図７に示すように、複数の孔７２と表面７１Ｓに複数の溝７３とが設けられている研磨パッド７１が開示されている。なお、平面図では孔７２と溝７３の図示を省略した。特許第３０４２５９３号には孔径について記載は無いが、一般的には直径１．８ｍｍの孔が３〜５個／ｃｍ2 程度の密度で形成されている研磨パッドがよく用いられている。なお、特許第３０４２５９３号には、溝幅は孔径以下でよい、また溝深さは０．３ｍｍ程度でよいとの記載あり、さらに溝深さは０．５ｍｍまでのもが記載されている（例えば、特許文献１参照。）。
【０００５】
上記従来技術３の研磨パッドでは、孔が設けられていることによって、研磨抵抗の上昇が抑えられる。また研磨パッド表面に溝が形成されていることによって半導体ウエハとの間の密閉性が低下し、負圧を生じにくくしている。このため、研磨終了後に研磨パッド表面より半導体ウエハを取り除くことが容易になっている。また従来技術３の研磨パッドは、通常の溝を有した研磨パッドと比べ、硬質層の強度の低下が抑制されることにより、軟質層の負荷が低減され、時間を経た場合の劣化が低減されるという特徴を有する。
【０００６】
また、化学的機械研磨（以下ＣＭＰという、ＣＭＰはChemical Mechanical Polishingの略）は、半導体装置の製造プロセスにおいて絶縁膜表面を平坦化するとき、銅配線、タングステンプラグ等を形成する際の余剰な材料を除去するとき等に用いられている。
【０００７】
従来から広く使われているＣＭＰ装置は、研磨パッドの研磨面は平面状であり、ウエハの被研磨面と研磨パッドの研磨面とが平行に配置されて、お互いが回転しながら接触することにより研磨を行うものである（例えば、特許文献２参照。）。
【０００８】
また、ベルト式のＣＭＰ装置（例えば、特許文献３参照。）（例えば、特許文献４参照。）、直線揺動式のＣＭＰ装置（例えば、特許文献５参照。）、リング状研磨パッドを有するＣＭＰ装置（例えば、特許文献６参照。）、ローラ式のＣＭＰ装置が知られている（例えば、特許文献７参照。）。上記いずれの研磨装置も被研磨面に接触する研磨パッドの研磨面は平面状となっている。
【０００９】
【特許文献１】
特開平９−１１７８５５号公報（第４頁、図１、図５）
【特許文献２】
特開２０００−２１８５１４号公報（第４頁、図５）
【特許文献３】
特開２０００−２１８５１４号公報（第４頁、図６）
【特許文献４】
特開平８−５２６５２号公報公報（第５−６頁、図１）
【特許文献５】
特開平８−５２６５２号公報（第８頁、図１０）
【特許文献６】
特開平１１−３１６７１号公報（第５頁、図１）
【特許文献７】
特開平２−１３９１７２号公報（第３−５頁、図１−３）
【００１０】
【発明が解決しようとする課題】
しかしながら、上記従来技術１の研磨パッドは、研磨中に研磨液が溝を通って流れ出してしまうため、多くの研磨液が必要になる。また、溝の形成は切削加工で行うので、パンチングで孔を形成した研磨パッドと比較して、研磨パッドの製造コストが高くなる。
【００１１】
上記従来技術２の研磨パッドは、孔の部分で、被研磨物との間に負圧を生じるため、研磨抵抗が上昇する。さらに、研磨終了後に被研磨物を取り除くことが困難である。この現象の詳細な説明は、特開平９−１１７８５５号公報にも記載されている。
【００１２】
従来技術３の研磨パッドは、それを製造する際に、パンチングで孔を形成した後に、切削加工にて溝を形成する必要があるため、製造コストがかかる。
【００１３】
上記従来の技術で説明したような研磨パッドを用いた研磨装置および研磨方法では、上記研磨パッドの課題が解決されない。
【００１４】
【課題を解決するための手段】
本発明は、上記課題を解決するためになされた研磨パッド、研磨装置および研磨方法である。
【００１５】
本発明の第１研磨パッドは、被研磨物を研磨する研磨パッドにおいて、前記研磨パッドを厚さ方向に貫通する複数の長孔が設けられていて、前記長孔は、その長手方向の長さが２０ｍｍ以上のものからなり、前記長孔の短手方向のピッチは、前記長孔の短手方向の長さの２倍以上１００ｍｍ未満に形成されているものである。
【００１６】
上記第１研磨パッドでは、研磨パッドを厚さ方向に貫通する複数の長孔が設けられていることから、被研磨面と研磨パッド表面との間の密閉性が低下するので負圧が生じにくくなる。このため、研磨終了後に研磨パッド表面より被研磨物を取り除くことが容易になる。また、本発明の研磨パッドに形成される長孔はパンチング加工で形成することができるので、切削加工により形成される溝を有する研磨パッドよりも製造コストが安価になる。
【００１７】
本発明の第２研磨パッドは、被研磨物を研磨する研磨パッドにおいて、前記研磨パッドを厚さ方向に貫通する複数の孔が設けられていて、前記複数の孔のうちの一部は長孔からなり、前記長孔は、その長手方向の長さが２０ｍｍ以上のものからなり、前記長孔の短手方向のピッチは、前記長孔の短手方向の長さの２倍以上１００ｍｍ未満に形成されているものである。
【００１８】
上記第２研磨パッドでは、研磨パッドを厚さ方向に貫通する複数の孔が設けられていて、この複数の孔のうちの一部は長孔で形成されていることから、第１研磨パッドと同様に、長孔によって被研磨面と研磨パッド表面との間の密閉性が低下して負圧が生じにくくなる。このため、研磨終了後に研磨パッド表面より被研磨物を取り除くことが容易になる。さらに、長孔以外の複数の孔が設けられていることから、研磨抵抗の上昇が抑えられる。さらに、従来の研磨パッドのように溝が形成されていないため、研磨液が溝を通って研磨パッド外に流出することがない。本発明の研磨パッドに形成された長孔は、その内部に研磨液を留めるので、使用する研磨液の量を減らすことができる。また、本発明の研磨パッドに形成される長孔を含む複数の孔は１回のパンチング加工で形成することが可能であるので、切削加工により形成される溝を有する研磨パッドよりも製造コストが安価になる。さらに、長孔は研磨パッドの厚さ方向に貫通するように形成されているため、研磨が進行して研磨パッドが磨耗した際にも、長孔が無くなることはない。このため、溝を有する研磨パッドよりもパッド寿命を延ばすことができる。
【００１９】
本発明の研磨装置は、研磨パッドの製造コストを安価にできる本発明の研磨パッドを用いたものである。このように本発明の研磨パッドを用いたことから、研磨装置の運用費用が低減される。さらに、本発明の研磨パッドは従来の溝を有する研磨パッドよりもパッド寿命が長いので、研磨パッドの交換頻度が低減される。
【００２０】
本発明の研磨方法は、研磨パッドの製造コストを安価にできる本発明の研磨パッドを用いたものである。このように本発明の研磨パッドを用いたことから、研磨コストが低減される。さらに、本発明の研磨パッドは従来の溝を有する研磨パッドよりもパッド寿命が長いので、研磨パッドの交換頻度が低減される。
【００２１】
【発明の実施の形態】
本発明の第１研磨パッドに係る第１実施の形態を、図１の平面図および部分拡大図によって説明する。
【００２２】
図１に示すように、第１研磨パッド１は、この第１研磨パッド１を厚さ方向に貫通する複数の長孔１１が、行方向および列方向にそろえて設けられているものである。上記研磨パッド１は、例えば、発泡ポリウレタンやウレタンのような樹脂からなる。その厚さは一般敵な研磨パッドの厚さと同程度であり、例えば０.５ｍｍ〜３.０ｍｍ程度の厚さを有している。上記長孔１１は、その長手方向の長さＬが２０ｍｍ以上を有し、また上記長孔１１は、その短手方向の長さ（以下幅という）Ｗの２倍以上１００ｍｍ未満になるピッチｐで形成されている。なお、長孔１１の長手方向の間隔ｄは適宜設定されるがここでは一例として１０ｍｍとした。また、上記長孔１１は、行方向および列方向のいずれか一方もしくは両方にずらして形成されていてもよい。
【００２３】
上記第１研磨パッド１では、第１研磨パッド１を厚さ方向に貫通する複数の長孔１１が設けられていることから、被研磨面と研磨パッド１の表面との間の密閉性が低下して負圧が生じにくくなるため、研磨終了後に研磨パッド１の表面より被研磨物を取り除くことが容易になる。また、本発明の第１研磨パッド１に形成される長孔１１はパンチング加工で形成することができるので、切削加工により形成される溝を有する研磨パッドよりも製造コストが安価になる。さらに、長孔１１は第１研磨パッド１の厚さ方向に貫通するように形成されているので、第１研磨パッド１が磨耗しても長孔１１が無くなることはない。このため、溝を有する従来の研磨パッドよりもパッド寿命を延ばすことができる。
【００２４】
次に、本発明の第２研磨パッドに係る第１実施の形態を、図２の平面図および部分拡大図によって説明する。なお、平面図では小孔の図示を省略した。
【００２５】
図２に示すように、第２研磨パッド２は、前記第１研磨パッド１のように第２研磨パッド２を厚さ方向に貫通する長孔１１が、例えば行方向および列方向にそろえて形成され、かつ第２研磨パッド２を厚さ方向に貫通するもので直径Ｄが１０ｍｍ以下、好ましくは５ｍｍ以下の複数の孔（以下小孔という）２１を設けたものである。すなわち、上記長孔１１は、その長さＬが２０ｍｍ以上を有し、また上記長孔１１は、その幅Ｗの２倍以上１００ｍｍ未満になるピッチｐ１で形成されている。なお、長孔１１の長手方向の間隔ｄは適宜設定されるがここでは一例として１０ｍｍとした。また、上記長孔１１は、行方向および列方向のいずれか一方もしくは両方にずらして形成されていてもよい。
【００２６】
さらに上記小孔２１は、例えば直径Ｄ＝１．８ｍｍの孔で構成され、格子点状にピッチｐ２ｘ＝ｐ２ｙ＝５ｍｍにて一様に配置されている。なお、小孔２１は上記長孔１１と重ならないように形成されていることが好ましい。また、小孔２１の配置は格子点状に限定されることはなく、所定のピッチで研磨パッドの全面に形成されるものであればよい。
【００２７】
上記第２研磨パッド２では、第２研磨パッド２を厚さ方向に貫通する複数の長孔１１と小孔２１とが設けられていることから、前記第１研磨パッド１と同様に、長孔１１によって被研磨面と第２研磨パッド２の表面との間の密閉性が低下して負圧が生じにくくなる。このため、研磨終了後に第２研磨パッド２の表面より被研磨物を取り除くことが容易になる。また長孔１１は、その内部に研磨液を留めるので、使用する研磨液の量を減らすことができる。
【００２８】
さらに、長孔１１以外に複数の小孔２１が設けられていることから、研磨抵抗の上昇が抑えられる。さらに、従来の研磨パッドのように溝が形成されていないため、研磨液が溝を通って研磨パッド外に流出することがない。
【００２９】
また、本発明の第２研磨パッド２に形成される長孔１１および小孔２１は１回のパンチング加工で形成することが可能であるので、切削加工により形成される溝を有する研磨パッドよりも製造コストが安価になる。
【００３０】
さらに、長孔１１および小孔２１は第２研磨パッド２の厚さ方向に貫通するように形成されているため、研磨が進行して第２研磨パッド２が磨耗した際にも、長孔１１および小孔２１が無くなることはない。このため、溝を有する研磨パッドよりもパッド寿命を延ばすことができる。
【００３１】
次に、上記第１、第２研磨パッド１、２を用いて、長孔の長さ、長孔の幅、長孔の幅方向のピッチを変えて搬送時のトラブルが発生する確率を調査した。前記図１、図２中に示した長孔１１の長手方向の間隔ｄは１０ｍｍに固定した。各研磨では、シリコンウエハ表面に酸化シリコンのベタ膜を形成したものを被研磨物とし、その酸化シリコン膜を被研磨面として１分間研磨して、そのシリコンウエハを搬送できるかどうかを、１０回調べた。その結果を表１にまとめる。
【００３２】
【表１】

Figure 0003843933
【００３３】
上記調査において、第１、第２研磨パッド１、２には、発泡ポリウレタン製のもの（例えば、ロデール社製の厚さ１．２ｍｍのＩＣ１０００単層品）、および上層が発泡ポリウレタン製で下層がＰＥＴ（ポリエチレンテレフタレート）製よりなる積層されたもの（例えば、上層がロデール社製の厚さ１．２ｍｍのＩＣ１０００で下層が同社製の厚さ１．２ｍｍのＳＵＢＡ４００よりなる積層された研磨パッド）を用いた。
【００３４】
第１、第２研磨パッド１、２を研磨定盤（図示せず）に接着するには、単層品の研磨パッドの場合には両面粘着テープを用いた。上記調査では、研磨定盤にスラリーが直接触れ無いようにするために、第１、第２研磨パッド１、２をパンチング加工して長孔１１、小孔２１等を形成した後、両面粘着テープを用いて研磨定盤に接着した。なお、第１、第２研磨パッド１、２に両面粘着テープを貼った後に、両面粘着テープとともに第１、第２研磨パッド１、２をパンチング加工して長孔１１、小孔２１等を形成すれば、両面粘着テープにも孔が形成されたものが得られる。このように両面粘着テープにも長孔１１、小孔２１が形成されていても、本発明の効果には影響は無い。
【００３５】
一方、積層品には、ＩＣ１０００のみ孔を貫通させたものと、ＩＣ１０００およびＳＵＢＡ４００の両方に孔を貫通させたものとを作製した。ＩＣ１０００とＳＵＢＡ４００は両面テープで接着するので、接着前にＩＣ１０００にパンチングで孔を形成した後に接着すれば、ＩＣ１０００のみ孔を貫通させたものが得られ、接着後にパンチングで孔を形成すれば、両方に孔を貫通させたものが容易に作製できる。
【００３６】
ＩＣ１０００をＳＵＢＡ４００に接着するには両面粘着テープを用いた。その際、ＩＣ１０００のみ孔を貫通させたものでは、ＩＣ１０００に両面粘着テープを貼る前にパンチング加工を行えば両面粘着テープに孔が無いものが得られ、両面テープを貼った後にパンチング加工すれば両面粘着テープに孔が形成されたものが得られる。両面粘着テープの孔に関しては、あっても無くても本発明の効果に影響は無いが、今回は、下層ＳＵＢＡ４００へのスラリー浸透が無いということから両面粘着テープに孔を形成しないものを作製して用いた。
【００３７】
ＩＣ１０００とＳＵＢＡ４００との両方に孔を貫通させたものでは、研磨定盤への接着用として両面粘着テープを用いた。両面粘着テープを貼る前にパンチング加工を行えば両面粘着テープに孔が形成されないものが得られ、両面粘着テープを貼った後にパンチング加工を行えば両面粘着テープにも孔が形成されたものが得られる。両面粘着テープの孔に関しては、あっても無くても本発明の効果に影響は無いが、今回は、研磨定盤へスラリーが直接触れ無いことから両面粘着テープに孔を形成しないものを作製して用いた。
【００３８】
上記表１より、ＩＣ１０００の単層品からなる第１研磨パッド１では、長さ２０ｍｍ以上の長孔１１が形成された場合に、ウエハの搬送エラーが０であった。ただし、長孔１１とともに小孔２１が形成された第２研磨パッド２の場合には長孔１１のピッチｐが１００ｍｍ以上となると搬送エラーが生じた。
【００３９】
また、ＩＣ１０００とＳＵＢＡ４００との積層品からなるからなりＩＣ１０００のみに長孔１１が形成された第１研磨パッド１では、長さ２０ｍｍ以上の長孔１１が形成された場合に、ウエハの搬送エラーが０であった。ただし、長孔１１とともに小孔２１が形成された第２研磨パッド２の場合には長孔１１のピッチｐが１００ｍｍ以上となると搬送エラーが生じた。
【００４０】
また、ＩＣ１０００とＳＵＢＡ４００との積層品からなるからなりＩＣ１０００とＳＵＢＡ４００とを貫通する長孔１１が形成された第１研磨パッド１では、長さ２０ｍｍ以上の長孔１１が形成された場合に、ウエハの搬送エラーが０であった。ただし、長孔１１とともに小孔２１が形成された第２研磨パッド２の場合には長孔１１のピッチｐが１００ｍｍ以上となると搬送エラーが生じた。
【００４１】
また、表１の最下段には、比較例として、長孔１１を形成しない研磨パッドによる結果を示した。その結果、単層品、積層品を問わず、また小孔の有無を問わず、いずれの研磨パッド構成であっても、ウエハの搬送エラーが生じた。これによって、ウエハの搬送エラーの防止に対して長孔１１が有効であることがわかる。
【００４２】
したがって、長孔１１は２０ｍｍ以上の長さが必要であることがわかった。さらに長孔の幅方向のピッチｐは１００ｍｍ未満とする必要があることがわかった。また、長孔１１の幅の下限は、長孔１１間の研磨パッドの剛性を考慮して長孔１１の幅の２倍以上とした。
【００４３】
次に、本発明の第１、第２研磨パッドに形成される長孔に係る実施の形態を、図３の平面図によって説明する。
【００４４】
図３に示すように、第１研磨パッド１（第２研磨パッド２）に長孔１１が放射状に配置されて形成されていてもよい。図面では放射状方向に一つの長孔１１が形成されたものを示したが、放射状方向に複数の長孔が形成されていてもよい。図３では小孔２１の記載を省略したが、前記図２で説明したように小孔２１が形成されていてもよい。なお、小孔２１の配置は格子点状に限定されることはなく、所定のピッチで研磨パッドの全面に形成されるものであればよい。
【００４５】
上記構成の研磨パッドでは、長孔１１の長さを十分に、例えば被研磨物（例えばウエハ）の半径より大きくとり、放射状に配置することで、ウエハへの負圧がより生じにくい構造とすることができる。このような長孔１１をパンチング加工で形成することで、溝に比べて比較的自由な形状に形成できることは本構成の利点の一つである。
【００４６】
次に、本発明の第１、第２研磨パッドに形成される長孔に係る実施の形態を、図４の平面図によって説明する。
【００４７】
図４に示すように、第１研磨パッド１（第２研磨パッド２）に円弧状の長孔１１が例えば同心円状に配置されて形成されていてもよい。図面では同心円状に２列の長孔１１が形成されている場合を示したが、３列以上に形成されていてもよい。図４では小孔２１の記載を省略したが、前記図２で説明したように小孔２１が形成されていてもよい。なお、小孔２１の配置は格子点状に限定されることはなく、所定のピッチで研磨パッドの全面に形成されるものであればよい。
【００４８】
上記構成の研磨パッドでは、上記長孔１１の長さを例えば被研磨物（例えばウエハ）の半径よりも十分に大きくとり、この長孔１１を円弧状に形成することで、ウエハへの負圧がより生じにくい構造とすることができ、かつ、平行へ放射状の配置に比べてスラリーの保持性が向上するのでスラリーの使用量を削減することができる。このように長孔１１および小孔２１をパンチング加工で形成することで、溝に比べて比較的自由な形状に形成できることはこの構成の利点の一つである。
【００４９】
上記説明した実施の形態では、長孔１１と小孔２１とを一回のパンチング加工で形成することを説明したが、長孔１１と小孔２１とをそれぞれ独立にパンチング加工により形成してもよい。この方法により研磨パッドの作製が容易になる場合としては、例えば、小孔２１のピッチに比べて、長孔１１の幅を広くしたい場合がある。具体的には、一例として、小孔２１のピッチが５ｍｍで７ｍｍ幅の長孔１１を形成したい場合がある。または長孔１１が小孔２１に重なる部分がある場合がある。具体的には、小孔２１が格子点状に配置され、長孔１１が放射状または円弧状に配置される場合などがある。
【００５０】
また、研磨パッドに光学式終点検出用の窓が形成される場合には、窓部には孔が形成されない方がウエハへの入射光を遮らないため有利であるが、窓に孔を形成したとしても、本発明の有効性は変わらない。
【００５１】
上記実施の形態では、研磨パッドの一例としてＩＣ１０００を用いたが、市販の不織布からなる研磨パッド、スエード状研磨パッド、その他樹脂材料からなる研磨パッドなど、研磨パッドの材質に係わりなく、上記説明したのと同様の効果が得られる。また、固定砥粒が含有されている研磨パッドであっても、本発明の有効性は変わらないので、上記説明したのと同様なる効果が得られる。
【００５２】
次に、本発明の研磨装置について、図５に示す概略構成斜視図により説明する。
【００５３】
研磨装置は、被研磨材料の被研磨面に研磨パッドが接触し、相対的に摩擦運動することにより被研磨面を研磨する前記研磨パッド１〜４のうちの一つを備えるものである。
【００５４】
すなわち、図５に示すように、研磨装置１０１は、例えば矢印ア方向に回動自在な研磨定盤１１１を備えている。この研磨定盤１１１は図示しない回動駆動装置に接続された回転軸１１２を介して回動される。また、研磨定盤１１１上には、前記図１〜図４によって説明した研磨パッド１〜４のうちの一つが装着されている。ここでは研磨パッド１を装着した。以下、研磨パッド１で説明する。装着方法は、一般的な研磨パッドの装着方法、例えば粘着シート（粘着テープも含む）もしくは粘着剤を用いる方法による。具体的には、前記説明した方法による。
【００５５】
上記研磨パッド１が装着される研磨定盤１１１に対向する位置、通常は研磨定盤１１１の回転中心を外した位置に対向するように、研磨ヘッド１１５が備えられている。この研磨ヘッド１１５は昇降自在に構成されている。さらに、この研磨ヘッド１１５は図示しない回動駆動装置に接続された回転軸１１６を介して例えば矢印イ方向に回動される。また、この研磨ヘッド１１５の研磨定盤１１１に対向する面は、被研磨物３０１が装着されるようになっている。被研磨物の装着方法は、真空吸着、静電吸着、接着剤を用いた接着、粘着シートを用いた接着等、種々の方法を採用することができる。さらに、研磨定盤１１１の上方で研磨ヘッド１１５の近傍には、研磨パッド１上に研磨スラリー１３１（便宜上、矢印で示す）を供給するためのノズル１２１が備えられている。そしてこの研磨スラリー１３１は、研磨定盤１１１の回動とともに研磨パッド１と被加工物３０１との間に入り込むように供給される。
【００５６】
本発明の研磨方法を以下に説明する。一例として、上記研磨装置１０１を用いて研磨を行う方法を説明する。まず、研磨パッド１〜４のうちの所望の研磨パッドを研磨定盤１１１に装着する。また研磨ヘッド１１５には被研磨物３０１を装着する。その後、ノズル１２１より研磨スラリー１３１を研磨パッド１上に供給するとともに、研磨定盤１１１を回動させる。また、研磨ヘッド１１５も回動させる。そして、所望の加工圧力となるように、研磨パッド１に被研磨物３０１を接触させて、被研磨物３０１の被研磨面を研磨する。研磨条件の一例としては、研磨スラリー１３１には、例えば水酸化カリウム（ＫＯＨ）ベースのフュームドシリカ系スラリーを用い、加工圧力を３００ｇ／ｃｍ2 、回転数を被研磨物（例えばウエハ）に対する研磨パッドの周速度が６０ｍ／ｍｉｎになるように設定した。研磨が終了した後は、被加工物３０１を研磨パッド１より引き離し、研磨スラリー１３１の供給を停止するとともに、研磨定盤１１１および研磨ヘッド１１５の回動を停止する。その後、研磨ヘッド１１５より被加工物３０１を脱着すればよい。なお、脱着前に被研磨物３０１の被研磨面を洗浄してもよい。
【００５７】
上記説明した研磨方法は一例であって、研磨条件は、研磨対象に応じて適宜変更することができる。また、従来から用いられている研磨条件を用いることもできる。
【００５８】
【発明の効果】
以上、説明したように本発明の第１研磨パッドによれば、研磨パッドを厚さ方向に貫通する複数の長孔が設けられているので、被研磨面と研磨パッド表面との間の密閉性を低下させて負圧が生じにくくすることができる。このため、研磨終了後に研磨パッド表面より被研磨物を容易に取り除くことができる。また、長孔をパンチング加工で形成することができるので、従来の切削加工により形成される溝を有する研磨パッドを用いる従来の研磨パッドよりも製造コストが安価になる。さらに、長孔は研磨パッドの厚さ方向に貫通するように形成されているので研磨パッドが磨耗しても長孔が無くなることはないため、溝を有する研磨パッドよりもパッド寿命を延ばすことができる。
【００５９】
本発明の第２研磨パッドによれば、研磨パッドを厚さ方向に貫通する複数の孔が設けられていて、この複数の孔のうちの一部は長孔で形成されているので、第１研磨パッドと同様の効果が得られる。さらに、長孔以外の複数の孔が設けられているので、研磨抵抗の上昇を抑えることができる。さらに、長孔内に研磨液を留めることができるので、従来の溝を形成した研磨パッドと比較して研磨液量を減らすことができる。また、長孔を含む複数の孔は１回のパンチング加工で形成することができるので、切削加工により形成される溝を有する従来の研磨パッドを使用するよりも製造コストが安価になる。さらに、長孔は研磨パッドの厚さ方向に貫通するように形成されているので研磨パッドが磨耗しても長孔が無くなることはないため、溝を有する研磨パッドよりもパッド寿命を延ばすことができる。
【００６０】
本発明の研磨装置によれば、研磨パッドの製造コストを安価にできる本発明の研磨パッドが装着されていることから、研磨装置の運用費用を低減することができる。さらに、本発明の研磨パッドは従来の溝を有する研磨パッドよりもパッド寿命が長いので、研磨パッドの交換頻度を低減することができる。その結果、研磨装置の運用費用を低減することができる。それとともに、本発明の研磨パッドの作用効果を得ることができる。
【００６１】
本発明の研磨方法は、研磨パッドの製造コストを安価にできる本発明の研磨パッドを用いることから、研磨コストを低減することができる。さらに、本発明の研磨パッドは従来の溝を有する研磨パッドよりもパッド寿命が長いので、研磨パッドの交換頻度を低減することができる。その結果、研磨コストを低減することができる。それとともに、本発明の研磨パッドの作用効果を得ることができる。
【図面の簡単な説明】
【図１】 本発明の第１研磨パッドに係る一実施の形態を示す平面図および部分拡大図である。
【図２】 本発明の第２研磨パッドに係る一実施の形態を示す平面図および部分拡大図である。
【図３】 本発明の第１、第２研磨パッドに形成される長孔に係る一実施の形態を示す平面図である。
【図４】 本発明の第１、第２研磨パッドに形成される長孔に係る一実施の形態を示す平面図である。
【図５】 本発明の第１の研磨装置に係る実施の形態を示す概略構成斜視図である。
【図６】 従来技術１の研磨パッドを示す平面図、部分拡大図およびＡ−Ａ’線断面図である。
【図７】 従来技術３の研磨パッドを示す平面図、部分拡大図およびＢ−Ｂ’線断面図である。
【符号の説明】
１…第１研磨パッド、１１…長孔[0001]
BACKGROUND OF THE INVENTION
  The present invention relates to a polishing pad, a polishing apparatus, and a polishing method, and more particularly to a polishing pad provided with a plurality of long holes, a polishing apparatus using the polishing pad, and a polishing method using the polishing pad.
[0002]
[Prior art]
  As the prior art 1, a polishing pad having a groove on the surface is commercially available. For example, there is a polishing pad IC1000-A22 manufactured by Rodel Nitta. Figure6As shown in FIG. 2, the polishing pad 61 has grooves 62 having a width of 2 mm formed in a lattice shape at a pitch of about 2 cm on the surface 61S of the polishing pad. In the plan view, the illustration of the groove 62 is omitted.
[0003]
  As the prior art 2, there is a commercially available polishing pad having a plurality of small holes (for example, small holes having a diameter of 1.8 mm) on the surface. As an example, a polishing pad IC1000 (p) manufactured by Rodel Nitta is known.
[0004]
  As prior art 3, figure7As shown, a polishing pad 71 in which a plurality of holes 72 and a plurality of grooves 73 are provided in a surface 71S is disclosed. In the plan view, the hole 72 and the groove 73 are not shown. Patent No. 3042593 does not describe the hole diameter, but generally 3 to 5 holes / cm with a diameter of 1.8 mm.2A polishing pad formed with a certain density is often used. Japanese Patent No. 3042593 describes that the groove width may be equal to or smaller than the hole diameter, the groove depth may be about 0.3 mm, and further, the groove depth is up to 0.5 mm ( For example, see Patent Document 1.)
[0005]
  In the polishing pad of the above-mentioned prior art 3, the increase in polishing resistance is suppressed by providing the holes. Further, since the groove is formed on the surface of the polishing pad, the sealing property with the semiconductor wafer is lowered, and negative pressure is hardly generated. For this reason, it is easy to remove the semiconductor wafer from the surface of the polishing pad after completion of polishing. Moreover, the polishing pad of the prior art 3 has a reduced hard layer load, and the deterioration over time is reduced by suppressing a decrease in the strength of the hard layer as compared with a polishing pad having a normal groove. It has the feature that.
[0006]
  Chemical mechanical polishing (hereinafter referred to as CMP, CMP is an abbreviation for Chemical Mechanical Polishing) is a surplus material for forming copper wiring, tungsten plugs, and the like when planarizing the surface of an insulating film in a semiconductor device manufacturing process. It is used when removing
[0007]
  In a CMP apparatus that has been widely used in the past, the polishing surface of the polishing pad is flat, and the surface to be polished of the wafer and the polishing surface of the polishing pad are arranged in parallel, and contact each other while rotating. Polishing is performed (for example, refer to Patent Document 2).
[0008]
  Also, a belt-type CMP apparatus (see, for example, Patent Document 3) (see, for example, Patent Document 4), a linear rocking-type CMP apparatus (see, for example, Patent Document 5), and a CMP having a ring-shaped polishing pad. An apparatus (for example, see Patent Document 6) and a roller type CMP apparatus are known (for example, see Patent Document 7). In any of the above polishing apparatuses, the polishing surface of the polishing pad that contacts the surface to be polished is flat.
[0009]
[Patent Document 1]
          JP-A-9-117855 (Page 4, FIGS. 1 and 5)
[Patent Document 2]
          JP 2000-218514 A (Page 4, FIG. 5)
[Patent Document 3]
          JP 2000-218514 A (Page 4, FIG. 6)
[Patent Document 4]
          JP-A-8-52652 (page 5-6, FIG. 1)
[Patent Document 5]
          JP-A-8-52652 (page 8, FIG. 10)
[Patent Document 6]
          Japanese Patent Laid-Open No. 11-31671 (5th page, FIG. 1)
[Patent Document 7]
          JP-A-2-139172 (page 3-5, FIG. 1-3)
[0010]
[Problems to be solved by the invention]
  However, the polishing pad of the above prior art 1 requires a large amount of polishing liquid because the polishing liquid flows out through the grooves during polishing. Moreover, since the groove is formed by cutting, the manufacturing cost of the polishing pad is higher than that of a polishing pad in which holes are formed by punching.
[0011]
  The polishing pad of the above prior art 2 generates a negative pressure with the object to be polished at the hole portion, so that the polishing resistance increases. Furthermore, it is difficult to remove the object to be polished after polishing. A detailed explanation of this phenomenon is also described in JP-A-9-117855.
[0012]
  Since the polishing pad of the prior art 3 needs to form a groove | channel by cutting after forming a hole by punching, when manufacturing it, manufacturing cost starts.
[0013]
  In the polishing apparatus and the polishing method using the polishing pad as described in the prior art, the problem of the polishing pad is not solved.
[0014]
[Means for Solving the Problems]
  The present invention is a polishing pad, a polishing apparatus, and a polishing method that have been made to solve the above problems.
[0015]
  The first polishing pad of the present invention is a polishing pad for polishing an object to be polished, and is provided with a plurality of long holes penetrating the polishing pad in the thickness direction.SoThe length of the long holes is 20 mm or more, and the pitch of the long holes in the short direction is not less than twice the length of the long holes in the short direction and less than 100 mm.
[0016]
  In the first polishing pad, since a plurality of long holes penetrating the polishing pad in the thickness direction are provided, the sealing property between the surface to be polished and the surface of the polishing pad is reduced, so that negative pressure is hardly generated. Become. For this reason, it becomes easy to remove an object to be polished from the surface of the polishing pad after polishing. In addition, since the long hole formed in the polishing pad of the present invention can be formed by punching, the manufacturing cost is lower than that of the polishing pad having a groove formed by cutting.
[0017]
  The second polishing pad of the present invention is a polishing pad for polishing an object to be polished, wherein a plurality of holes penetrating the polishing pad in the thickness direction are provided, and some of the plurality of holes are elongated holes. And the slot isSoThe length of the long holes is 20 mm or more, and the pitch of the long holes in the short direction is not less than twice the length of the long holes in the short direction and less than 100 mm.
[0018]
  In the second polishing pad, a plurality of holes penetrating the polishing pad in the thickness direction are provided, and some of the plurality of holes are formed as long holes. Similarly, due to the long hole, the sealing property between the surface to be polished and the surface of the polishing pad is lowered, and it is difficult to generate a negative pressure. For this reason, it becomes easy to remove an object to be polished from the surface of the polishing pad after polishing. Furthermore, since a plurality of holes other than the long holes are provided, an increase in polishing resistance can be suppressed. Further, since the groove is not formed unlike the conventional polishing pad, the polishing liquid does not flow out of the polishing pad through the groove. The long hole formed in the polishing pad of the present invention retains the polishing liquid therein, so that the amount of the polishing liquid used can be reduced. In addition, since the plurality of holes including the long holes formed in the polishing pad of the present invention can be formed by a single punching process, the manufacturing cost is higher than that of a polishing pad having grooves formed by a cutting process. It will be cheaper. Furthermore, since the long hole is formed so as to penetrate in the thickness direction of the polishing pad, the long hole will not be lost even when polishing progresses and the polishing pad is worn. For this reason, pad life can be extended rather than the polishing pad which has a groove | channel.
[0019]
  The polishing apparatus of the present invention uses the polishing pad of the present invention that can reduce the manufacturing cost of the polishing pad. Thus, since the polishing pad of the present invention is used, the operating cost of the polishing apparatus is reduced. Furthermore, since the polishing pad of the present invention has a longer pad life than a polishing pad having a conventional groove, the frequency of replacement of the polishing pad is reduced.
[0020]
  The polishing method of the present invention uses the polishing pad of the present invention that can reduce the manufacturing cost of the polishing pad. Thus, since the polishing pad of this invention was used, polishing cost is reduced. Furthermore, since the polishing pad of the present invention has a longer pad life than a polishing pad having a conventional groove, the frequency of replacement of the polishing pad is reduced.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
  A first embodiment of the first polishing pad of the present invention will be described with reference to a plan view and a partially enlarged view of FIG.
[0022]
  As shown in FIG. 1, the first polishing pad 1 is provided with a plurality of long holes 11 penetrating the first polishing pad 1 in the thickness direction so as to be aligned in the row direction and the column direction. The polishing pad 1 is made of, for example, a resin such as polyurethane foam or urethane. The thickness is about the same as the thickness of a general enemy polishing pad, and has a thickness of about 0.5 mm to 3.0 mm, for example. The slot 11 isThatThe length L in the longitudinal direction is 20 mm or more, and the long holes 11 are formed at a pitch p that is at least twice the length W (hereinafter referred to as width) W and less than 100 mm. In addition, although the space | interval d of the longitudinal direction of the long hole 11 is set suitably, it was 10 mm as an example here. Further, the long holes 11 may be formed so as to be shifted in either or both of the row direction and the column direction.
[0023]
  In the first polishing pad 1, since a plurality of long holes 11 penetrating the first polishing pad 1 in the thickness direction are provided, the sealing performance between the surface to be polished and the surface of the polishing pad 1 is lowered. Thus, since negative pressure is less likely to occur, it becomes easy to remove the object to be polished from the surface of the polishing pad 1 after polishing. In addition, since the long hole 11 formed in the first polishing pad 1 of the present invention can be formed by punching, the manufacturing cost is lower than that of a polishing pad having a groove formed by cutting. Furthermore, since the long hole 11 is formed so as to penetrate in the thickness direction of the first polishing pad 1, the long hole 11 is not lost even if the first polishing pad 1 is worn. For this reason, the pad life can be extended compared with the conventional polishing pad which has a groove | channel.
[0024]
  Next, a first embodiment of the second polishing pad of the present invention will be described with reference to a plan view and a partially enlarged view of FIG. In addition, illustration of a small hole was abbreviate | omitted in the top view.
[0025]
  As shown in FIG. 2, the second polishing pad 2 is formed with long holes 11 that penetrate the second polishing pad 2 in the thickness direction, for example, in the row direction and the column direction, like the first polishing pad 1. And a plurality of holes (hereinafter referred to as small holes) 21 having a diameter D of 10 mm or less, preferably 5 mm or less, which penetrate the second polishing pad 2 in the thickness direction. That is, the slot 11 isThatThe length L has a length of 20 mm or more, and the long holes 11 are formed at a pitch p1 that is twice the width W and less than 100 mm. In addition, although the space | interval d of the longitudinal direction of the long hole 11 is set suitably, it was 10 mm as an example here. Further, the long holes 11 may be formed so as to be shifted in either or both of the row direction and the column direction.
[0026]
  Further, the small holes 21 are formed of holes having a diameter D = 1.8 mm, for example, and have a pitch p2x in a lattice point shape.=It is uniformly arranged at p2y = 5 mm. The small holes 21 are preferably formed so as not to overlap with the long holes 11. Further, the arrangement of the small holes 21 is not limited to the lattice point shape, and may be any shape as long as it is formed on the entire surface of the polishing pad at a predetermined pitch.
[0027]
  In the second polishing pad 2, a plurality of long holes 11 and small holes 21 penetrating the second polishing pad 2 in the thickness direction are provided. 11, the sealing property between the surface to be polished and the surface of the second polishing pad 2 is lowered, and a negative pressure is hardly generated. For this reason, it becomes easy to remove the object to be polished from the surface of the second polishing pad 2 after the polishing. Further, since the long hole 11 retains the polishing liquid therein, the amount of the polishing liquid to be used can be reduced.
[0028]
  Further, since a plurality of small holes 21 are provided in addition to the long holes 11, an increase in polishing resistance can be suppressed. Further, since the groove is not formed unlike the conventional polishing pad, the polishing liquid does not flow out of the polishing pad through the groove.
[0029]
  Moreover, since the long hole 11 and the small hole 21 formed in the 2nd polishing pad 2 of this invention can be formed by one punching process, rather than the polishing pad which has the groove | channel formed by cutting. Manufacturing cost is reduced.
[0030]
  Furthermore, since the long hole 11 and the small hole 21 are formed so as to penetrate in the thickness direction of the second polishing pad 2, the long hole 11 can be used even when the polishing proceeds and the second polishing pad 2 is worn. And the small hole 21 is not lost. For this reason, pad life can be extended rather than the polishing pad which has a groove | channel.
[0031]
  Next, using the first and second polishing pads 1 and 2, the probability of occurrence of a trouble during transportation was investigated by changing the length of the long hole, the width of the long hole, and the pitch in the width direction of the long hole. . The distance d in the longitudinal direction of the long hole 11 shown in FIGS. 1 and 2 was fixed to 10 mm. In each polishing, whether a silicon oxide solid film is formed on the surface of the silicon wafer is used as an object to be polished, and the silicon oxide film is used as a surface to be polished for 1 minute to determine whether the silicon wafer can be transported 10 times. Examined. The results are summarized in Table 1.
[0032]
[Table 1]
Figure 0003843933
[0033]
  In the above investigation, the first and second polishing pads 1 and 2 are made of foamed polyurethane (for example, an IC1000 single-layer product having a thickness of 1.2 mm manufactured by Rodel), and the upper layer is made of foamed polyurethane and the lower layer is made of A laminated product made of PET (polyethylene terephthalate) (for example, a laminated polishing pad made of 1.2 mm thick IC1000 made by Rodel and the lower layer made of SUBA400 made by the company 1.2 mm thick). Using.
[0034]
  In order to adhere the first and second polishing pads 1 and 2 to a polishing surface plate (not shown), a double-sided adhesive tape was used in the case of a single-layer polishing pad. In the above investigation, in order to prevent the slurry from directly touching the polishing surface plate, the first and second polishing pads 1 and 2 are punched to form the long holes 11 and the small holes 21, and then double-sided adhesive tape. Was adhered to a polishing platen. After the double-sided adhesive tape is applied to the first and second polishing pads 1 and 2, the first and second polishing pads 1 and 2 are punched together with the double-sided adhesive tape to form long holes 11, small holes 21 and the like. If it does, what the hole was formed also in the double-sided adhesive tape is obtained. Thus, even if the long hole 11 and the small hole 21 are formed in the double-sided adhesive tape, the effect of the present invention is not affected.
[0035]
  On the other hand, in the laminated product, a product in which only the IC1000 has a hole penetrated and a product in which both the IC1000 and the SUBA400 have a hole penetrated were produced. Since IC1000 and SUBA400 are bonded with double-sided tape, if IC1000 and SUBA400 are bonded after punching holes in IC1000 before bonding, only IC1000 will be penetrated, and if holes are formed by punching after bonding, both Can be easily produced.
[0036]
  A double-sided adhesive tape was used to adhere the IC1000 to the SUBA400. At that time, in the case where only the IC1000 has a hole penetrated, if the punching process is performed before the double-sided adhesive tape is applied to the IC1000, the double-sided adhesive tape has no holes. An adhesive tape with holes formed is obtained. With regard to the holes in the double-sided adhesive tape, there is no effect on the effect of the present invention. However, this time, a product that does not form a hole in the double-sided adhesive tape is prepared because there is no slurry penetration into the lower layer SUBA400. Used.
[0037]
  In the case where both the IC1000 and the SUBA400 have holes penetrated, a double-sided adhesive tape was used for adhesion to the polishing surface plate. If the punching process is performed before the double-sided adhesive tape is applied, the double-sided adhesive tape will have no holes. If the punching process is performed after the double-sided adhesive tape has been applied, the double-sided adhesive tape will have holes. It is done. With regard to the holes in the double-sided adhesive tape, there is no effect on the effect of the present invention, but this time, a slurry that does not form a hole in the double-sided adhesive tape is prepared because the slurry does not directly touch the polishing surface plate. Used.
[0038]
  From Table 1 above, in the first polishing pad 1 made of a single-layer product of IC1000, the wafer transport error was 0 when the long hole 11 having a length of 20 mm or more was formed. However, in the case of the second polishing pad 2 in which the small holes 21 are formed together with the long holes 11, a conveyance error occurred when the pitch p of the long holes 11 was 100 mm or more.
[0039]
  Further, in the first polishing pad 1 which is composed of a laminated product of IC1000 and SUBA400 and the long hole 11 is formed only in the IC1000, when the long hole 11 having a length of 20 mm or more is formed, a wafer transfer error occurs. 0. However, in the case of the second polishing pad 2 in which the small holes 21 are formed together with the long holes 11, a conveyance error occurred when the pitch p of the long holes 11 was 100 mm or more.
[0040]
  Further, in the first polishing pad 1 formed of a laminated product of IC1000 and SUBA400 and having the long hole 11 penetrating the IC1000 and SUBA400, when the long hole 11 having a length of 20 mm or more is formed, the wafer The transport error was 0. However, in the case of the second polishing pad 2 in which the small holes 21 are formed together with the long holes 11, a conveyance error occurred when the pitch p of the long holes 11 was 100 mm or more.
[0041]
  In addition, the lowermost part of Table 1 shows the result of a polishing pad in which the long hole 11 is not formed as a comparative example. As a result, a wafer transport error occurred regardless of the configuration of the polishing pad, regardless of whether it was a single-layer product or a laminated product, and whether or not there were small holes. Thus, it can be seen that the long hole 11 is effective for preventing wafer transfer errors.
[0042]
  Therefore, it was found that the long hole 11 needs to have a length of 20 mm or more. Further, it has been found that the pitch p in the width direction of the long holes needs to be less than 100 mm. In addition, the lower limit of the width of the long holes 11 is set to be at least twice the width of the long holes 11 in consideration of the rigidity of the polishing pad between the long holes 11.
[0043]
  Next, an embodiment of the long hole formed in the first and second polishing pads of the present invention will be described with reference to the plan view of FIG.
[0044]
  As shown in FIG. 3, the long holes 11 may be formed radially in the first polishing pad 1 (second polishing pad 2). In the drawings, one long hole 11 is formed in the radial direction, but a plurality of long holes may be formed in the radial direction. Although the description of the small hole 21 is omitted in FIG. 3, the small hole 21 may be formed as described in FIG. 2. Note that the arrangement of the small holes 21 is not limited to a lattice point shape, and may be any shape as long as it is formed on the entire surface of the polishing pad at a predetermined pitch.
[0045]
  In the polishing pad having the above-described configuration, the long hole 11 is sufficiently longer than the radius of the object to be polished (for example, a wafer), and is arranged in a radial manner so that negative pressure on the wafer is less likely to occur. be able to. It is one of the advantages of this configuration that such a long hole 11 can be formed in a relatively free shape as compared with the groove by forming it by punching.
[0046]
  Next, an embodiment of the long hole formed in the first and second polishing pads of the present invention will be described with reference to the plan view of FIG.
[0047]
  As shown in FIG. 4, arc-shaped long holes 11 may be formed in the first polishing pad 1 (second polishing pad 2), for example, concentrically. In the drawing, a case where two rows of long holes 11 are formed concentrically is shown, but may be formed in three or more rows. Although the description of the small hole 21 is omitted in FIG. 4, the small hole 21 may be formed as described in FIG. 2. Note that the arrangement of the small holes 21 is not limited to a lattice point shape, and may be any shape as long as it is formed on the entire surface of the polishing pad at a predetermined pitch.
[0048]
  In the polishing pad having the above configuration, the length of the long hole 11 is set to, for example, an object to be polished (for example, a wafer).D(C) By making the slot 11 sufficiently larger than the radius and forming the elongated hole 11 in an arc shape, it is possible to make a structure in which the negative pressure on the wafer is less likely to occur, and in comparison with the radial arrangement in parallel. Since the retention of the slurry is improved, the amount of slurry used can be reduced. It is one of the advantages of this configuration that the long hole 11 and the small hole 21 can be formed in a relatively free shape as compared with the groove by forming the long hole 11 and the small hole 21 in this way.
[0049]
  In the embodiment described above, it has been described that the long hole 11 and the small hole 21 are formed by a single punching process. However, even if the long hole 11 and the small hole 21 are independently formed by a punching process, respectively. Good. As a case where the production of the polishing pad is facilitated by this method, for example, there is a case where the width of the long hole 11 is desired to be wider than the pitch of the small holes 21. Specifically, as an example, there is a case where it is desired to form the long holes 11 having a pitch of the small holes 21 of 5 mm and a width of 7 mm. Alternatively, there may be a portion where the long hole 11 overlaps the small hole 21. Specifically, there are cases where the small holes 21 are arranged in lattice points and the long holes 11 are arranged in a radial or arcuate manner.
[0050]
  In addition, when an optical end point detection window is formed on the polishing pad, it is advantageous not to form a hole in the window part because it does not block incident light on the wafer, but a hole is formed in the window. Even so, the effectiveness of the present invention remains unchanged.
[0051]
  In the above embodiment, the IC 1000 is used as an example of the polishing pad. However, the above description is applicable regardless of the material of the polishing pad, such as a polishing pad made of a commercially available non-woven fabric, a suede polishing pad, or a polishing pad made of other resin material. The same effect as can be obtained. Moreover, even if the polishing pad contains fixed abrasive grains, the effectiveness of the present invention does not change, so the same effect as described above can be obtained.
[0052]
  Next, regarding the polishing apparatus of the present invention,FIG.Will be described with reference to the schematic configuration perspective view shown in FIG.
[0053]
  PolishingThe apparatus includes one of the polishing pads 1 to 4 for polishing the surface to be polished by bringing the polishing pad into contact with the surface to be polished of the material to be polished and performing a relative frictional motion.
[0054]
  That is,FIG.As shown inPolishingThe apparatus 101 includes a polishing surface plate 111 that can rotate in the direction of arrow A, for example. The polishing surface plate 111 is rotated via a rotation shaft 112 connected to a rotation drive device (not shown). One of the polishing pads 1 to 4 described with reference to FIGS. 1 to 4 is mounted on the polishing surface plate 111. Here, the polishing pad 1 was mounted. Hereinafter, the polishing pad 1 will be described. The mounting method is based on a general polishing pad mounting method, for example, a method using an adhesive sheet (including an adhesive tape) or an adhesive. Specifically, according to the method described above.
[0055]
  A polishing head 115 is provided so as to face a position facing the polishing surface plate 111 on which the polishing pad 1 is mounted, usually a position where the rotation center of the polishing surface plate 111 is removed. The polishing head 115 is configured to be movable up and down. Further, the polishing head 115 is rotated, for example, in the direction of the arrow A through a rotating shaft 116 connected to a rotation driving device (not shown). Further, an object to be polished 301 is mounted on the surface of the polishing head 115 facing the polishing surface plate 111. Various methods such as vacuum adsorption, electrostatic adsorption, adhesion using an adhesive, adhesion using a pressure-sensitive adhesive sheet, and the like can be adopted as a method for mounting the object to be polished. Further, a nozzle 121 for supplying a polishing slurry 131 (shown by an arrow for convenience) on the polishing pad 1 is provided above the polishing surface plate 111 and in the vicinity of the polishing head 115. The polishing slurry 131 is supplied so as to enter between the polishing pad 1 and the workpiece 301 as the polishing surface plate 111 rotates.
[0056]
  Of the present inventionPolishingThe method will be described below. As an example, the abovePolishingA method for polishing using the apparatus 101 will be described. First, a desired polishing pad among the polishing pads 1 to 4 is mounted on the polishing surface plate 111. Further, an object to be polished 301 is attached to the polishing head 115. Thereafter, the polishing slurry 131 is supplied onto the polishing pad 1 from the nozzle 121 and the polishing surface plate 111 is rotated. Further, the polishing head 115 is also rotated. Then, the object to be polished 301 is brought into contact with the polishing pad 1 so as to obtain a desired processing pressure, and the surface to be polished of the object to be polished 301 is polished. As an example of polishing conditions, for example, potassium hydroxide (KOH) -based fumed silica-based slurry is used as the polishing slurry 131, and the processing pressure is 300 g / cm.2The rotational speed was set so that the peripheral speed of the polishing pad relative to the object to be polished (for example, a wafer) was 60 m / min. After the polishing is completed, the workpiece 301 is separated from the polishing pad 1 to stop the supply of the polishing slurry 131 and the rotation of the polishing surface plate 111 and the polishing head 115 is stopped. Thereafter, the workpiece 301 may be detached from the polishing head 115. Note that the surface to be polished 301 may be cleaned before desorption.
[0057]
  The polishing method described above is an example, and the polishing conditions can be changed as appropriate according to the object to be polished. Also, conventionally used polishing conditions can be used.
[0058]
【The invention's effect】
  As described above, according to the first polishing pad of the present invention, since a plurality of long holes penetrating the polishing pad in the thickness direction are provided, the sealing property between the surface to be polished and the surface of the polishing pad is provided. The negative pressure can be made difficult to occur by reducing the pressure. For this reason, the object to be polished can be easily removed from the surface of the polishing pad after completion of polishing. In addition, since the long hole can be formed by punching, the manufacturing cost is lower than that of a conventional polishing pad using a polishing pad having a groove formed by conventional cutting. Furthermore, since the long hole is formed so as to penetrate in the thickness direction of the polishing pad, the long hole will not be lost even if the polishing pad is worn, so that the pad life can be extended as compared with the polishing pad having a groove. it can.
[0059]
  According to the second polishing pad of the present invention, the plurality of holes penetrating the polishing pad in the thickness direction are provided, and some of the plurality of holes are formed as long holes. The same effect as the polishing pad can be obtained. Furthermore, since a plurality of holes other than the long holes are provided, an increase in polishing resistance can be suppressed. Furthermore, since the polishing liquid can be retained in the long hole, the amount of the polishing liquid can be reduced as compared with a polishing pad having a conventional groove. In addition, since a plurality of holes including long holes can be formed by a single punching process, the manufacturing cost is lower than when a conventional polishing pad having a groove formed by a cutting process is used. Furthermore, since the long hole is formed so as to penetrate in the thickness direction of the polishing pad, the long hole will not be lost even if the polishing pad is worn, so that the pad life can be extended as compared with the polishing pad having a groove. it can.
[0060]
  According to the polishing apparatus of the present invention, since the polishing pad of the present invention that can reduce the manufacturing cost of the polishing pad is mounted, the operating cost of the polishing apparatus can be reduced. Furthermore, since the polishing pad of the present invention has a longer pad life than a polishing pad having a conventional groove, the replacement frequency of the polishing pad can be reduced. As a result, the operating cost of the polishing apparatus can be reduced. At the same time, the effects of the polishing pad of the present invention can be obtained.
[0061]
  Since the polishing method of the present invention uses the polishing pad of the present invention that can reduce the manufacturing cost of the polishing pad, the polishing cost can be reduced. Furthermore, since the polishing pad of the present invention has a longer pad life than a polishing pad having a conventional groove, the replacement frequency of the polishing pad can be reduced. As a result, the polishing cost can be reduced. At the same time, the effects of the polishing pad of the present invention can be obtained.
[Brief description of the drawings]
FIG. 1 relates to a first polishing pad of the present invention.oneIt is the top view and partial enlarged view which show embodiment.
FIG. 2 relates to a second polishing pad of the present invention.oneIt is the top view and partial enlarged view which show embodiment.
FIG. 3 relates to a slot formed in the first and second polishing pads of the present invention.oneIt is a top view which shows embodiment.
FIG. 4 relates to a long hole formed in the first and second polishing pads of the present invention.oneIt is a top view which shows embodiment.
[Figure5FIG. 1 is a schematic perspective view showing an embodiment of the first polishing apparatus of the present invention.
[Figure6FIG. 10 is a plan view, a partially enlarged view, and a cross-sectional view taken along line A-A 'showing a polishing pad of prior art 1;
[Figure7FIG. 11 is a plan view, a partially enlarged view, and a cross-sectional view taken along line B-B 'showing a polishing pad according to prior art 3.
[Explanation of symbols]
  DESCRIPTION OF SYMBOLS 1 ... 1st polishing pad, 11 ... Long hole

Claims (6)

被研磨物を研磨する研磨パッドにおいて、
前記研磨パッドを厚さ方向に貫通する複数の長孔が設けられていて、
前記長孔は、その長手方向の長さが２０ｍｍ以上のものからなり、
前記長孔の短手方向のピッチは、前記長孔の短手方向の長さの２倍以上１００ｍｍ未満に形成されている
ことを特徴とする研磨パッド。In a polishing pad for polishing an object to be polished,
A plurality of long holes penetrating the polishing pad in the thickness direction are provided,
The long holes, the longitudinal length of their consists more than 20 mm,
The pitch of the long holes in the short direction is formed to be not less than twice the length of the long holes in the short direction and less than 100 mm. 被研磨物を研磨する研磨パッドにおいて、
前記研磨パッドを厚さ方向に貫通する複数の孔が設けられていて、前記複数の孔のうちの一部は長孔からなり、
前記長孔は、その長手方向の長さが２０ｍｍ以上のものからなり、
前記長孔の短手方向のピッチは、前記長孔の短手方向の長さの２倍以上１００ｍｍ未満に形成されている
ことを特徴とする研磨パッド。In a polishing pad for polishing an object to be polished,
A plurality of holes penetrating the polishing pad in the thickness direction are provided, and a part of the plurality of holes is a long hole,
The long holes, the longitudinal length of their consists more than 20 mm,
The pitch of the long holes in the short direction is formed to be not less than twice the length of the long holes in the short direction and less than 100 mm. 被研磨材料の被研磨面に研磨パッドが接触し、
相対的に摩擦運動することにより被研磨面を研磨する研磨装置において、
前記研磨パッドは、前記研磨パッドを厚さ方向に貫通する複数の長孔が設けられていて、
前記長孔は、その長手方向の長さが２０ｍｍ以上のものからなり、
前記長孔の短手方向のピッチは、前記長孔の短手方向の長さの２倍以上１００ｍｍ未満に形成されている
ことを特徴とする研磨装置。The polishing pad contacts the surface to be polished of the material to be polished,
In a polishing apparatus for polishing a surface to be polished by relatively frictional movement,
The polishing pad is provided with a plurality of elongated holes penetrating the polishing pad in the thickness direction,
The long holes, the longitudinal length of their consists more than 20 mm,
The pitch of the long hole in the short direction is formed to be not less than twice the length of the long hole in the short direction and less than 100 mm. 被研磨材料の被研磨面に研磨パッドが接触し、
相対的に摩擦運動することにより被研磨面を研磨する研磨装置において、
前記研磨パッドは、前記研磨パッドを厚さ方向に貫通する複数の孔が設けられていて、前記複数の孔のうち一部は長孔からなり、
前記長孔は、その長手方向の長さが２０ｍｍ以上のものからなり、
前記長孔の短手方向のピッチは、前記長孔の短手方向の長さの２倍以上１００ｍｍ未満に形成されている
ことを特徴とする研磨装置。The polishing pad contacts the surface to be polished of the material to be polished,
In a polishing apparatus for polishing a surface to be polished by relatively frictional movement,
The polishing pad is provided with a plurality of holes penetrating the polishing pad in the thickness direction, and some of the plurality of holes are elongated holes,
The long holes, the longitudinal length of their consists more than 20 mm,
The pitch of the long hole in the short direction is formed to be not less than twice the length of the long hole in the short direction and less than 100 mm. 被研磨材料の被研磨面に研磨パッドが接触し、
被研磨面と研磨パッドとが相対的に摩擦運動することにより被研磨面を研磨する研磨方法において、
前記研磨パッドは、前記研磨パッドを厚さ方向に貫通する複数の長孔が設けられていて、
前記長孔は、その長手方向の長さが２０ｍｍ以上のものからなり、
前記長孔の短手方向のピッチは、前記長孔の短手方向の長さの２倍以上１００ｍｍ未満に形成されている
ことを特徴とする研磨方法。The polishing pad contacts the surface to be polished of the material to be polished,
In the polishing method for polishing the surface to be polished by the relative friction movement of the surface to be polished and the polishing pad,
The polishing pad is provided with a plurality of elongated holes penetrating the polishing pad in the thickness direction,
The long holes, the longitudinal length of their consists more than 20 mm,
The pitch of the long holes in the short direction is formed to be not less than twice the length of the long holes in the short direction and less than 100 mm. 被研磨材料の被研磨面に研磨パッドが接触し、
被研磨面と研磨パッドとが相対的に摩擦運動することにより被研磨面を研磨する研磨方法において、
前記研磨パッドは、前記研磨パッドを厚さ方向に貫通する複数の孔が設けられていて、前記複数の孔のうち一部は長孔からなり、
前記長孔は、その長手方向の長さが２０ｍｍ以上のものからなり、
前記長孔の短手方向のピッチは、前記長孔の短手方向の長さの２倍以上１００ｍｍ未満に形成されている
ことを特徴とする研磨方法。The polishing pad contacts the surface to be polished of the material to be polished,
In the polishing method for polishing the surface to be polished by the relative friction movement of the surface to be polished and the polishing pad,
The polishing pad is provided with a plurality of holes penetrating the polishing pad in the thickness direction, and some of the plurality of holes are elongated holes,
The long holes, the longitudinal length of their consists more than 20 mm,
The pitch of the long holes in the short direction is formed to be not less than twice the length of the long holes in the short direction and less than 100 mm.
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KR10-2004-7011783A KR20040079965A (en) 2002-02-07 2003-02-07 Polishing pad, polishing device, and polishing method
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TW092102513A TWI266673B (en) 2002-02-07 2003-02-07 Polishing pad, polishing device, and polishing method
CNB038033631A CN100365773C (en) 2002-02-07 2003-02-07 Polishing pad, polishing device, and polishing method
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US20070190911A1 (en) 2007-08-16
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