JP2007111831A - Method for manufacturing mems element, and mems element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a MEMS element, and a MEMS element, in which control of etching time is easier in release etching of a structure, and a support part of the structure is formed with favorable precision to achieve excellent characteristics. <P>SOLUTION: A method for manufacturing a MEMS element in which the structure 17 comprising a movable part 15 and a support part 16 to support the movable part 15 is provided with processes of: forming an insulation film 11 on the semiconductor substrate 10; implanting P-ions except for a support part range of the insulation film 11 to be the support part 16 of the structure 17; forming the movable part 15 of the structure 17 to be in contact with the support part range of the insulation film 11 and 13; and etching the insulation film 13 after P-ion implantation as a sacrificial layer to release the structure 17. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to a method for manufacturing a MEMS device having a structure on a semiconductor substrate and the MEMS device.

2. Description of the Related Art In recent years, sensors, resonators, communication devices, and the like that use MEMS (Micro Electro Mechanical System) technology and have a MEMS element on a semiconductor substrate have attracted attention. MEMS
The element is a functional element composed of a minute structure manufactured on a semiconductor substrate using a semiconductor process. For example, an ME provided with a comb-like movable electrode and a comb-like fixed electrode as shown in Patent Document 1
MS elements are known. The comb-like movable electrode as the structure has a movable part that is deformed by an external force such as an electric force or acceleration, and a support part that supports the movable part. In other words, the movable portion has a cantilever beam structure or a doubly supported beam structure by the support portion, and is supported while maintaining a space with the semiconductor substrate.

JP 2004-276200 A

However, when the sacrificial layer under the movable part and the support part are composed of the same material insulating film in the manufacture of the structure, the support part is left while releasing the movable part during the release etching of the structure. In addition, it is necessary to manage the etching time. This support part is involved in the characteristics of the MEMS element such as the resonance vibration (resonance frequency) of the movable part. In order to form the support part accurately and obtain the good characteristics of the MEMS element, precise time management is required. It was necessary.

The present invention has been made to solve the above-mentioned problems, and its purpose is to facilitate the time management of the etching during the release etching of the structure and to form the support portion of the structure with high accuracy. It is in providing the manufacturing method and MEMS element of the excellent MEMS element.

In order to solve the above-described problems, the present invention provides a method for manufacturing a MEMS device, in which a structure having a movable part and a support part that supports the movable part is provided on a semiconductor substrate. A step of forming an insulating film, a step of implanting P ions into the insulating film except for a supporting portion region of the insulating film to be a supporting portion of the structure, and a supporting portion region of the insulating film on the insulating film Forming a movable part of the structure in contact with the substrate, and etching the insulating film implanted with the P ions as a sacrificial layer to release the structure.

In this MEMS element manufacturing method, when a structure is released, a difference in etching rate between an insulating film such as SiO ₂ and an insulating film obtained by implanting P (phosphorus) ions into SiO ₂ or the like is used. In general, when a hydrofluoric acid-based etching solution is used, comparing the SiO ₂ film and the film in which P ions are implanted into SiO ₂ , the film in which P ions are implanted into SiO ₂ has a higher etching rate. It is known.
Therefore, by using an insulating film in which P ions are implanted as a sacrificial layer for releasing the structure of the MEMS element, the support portion is formed of a normal insulating film, thereby facilitating etching time management and the structure. Can be formed with high accuracy. And since the support part of a structure can be formed accurately by using the manufacturing method of the MEMS element of this invention, the resonant frequency characteristic of a MEMS resonator etc. can be improved and the MEMS element excellent in the characteristic can be provided.

According to the present invention, there is also provided a method for manufacturing a MEMS device in which a structure having a movable part and a support part that supports the movable part is provided on a semiconductor substrate, the method comprising: forming an insulating film on the semiconductor substrate; A step of implanting B ions into a support portion region of the insulating film to be a support portion of the structure, and a step of forming a movable portion of the structure on the insulating film in contact with the support portion region of the insulating film And a step of etching the insulating film as a sacrificial layer to release the structure.

In this MEMS element manufacturing method, when a structure is released, a difference in etching rate between an insulating film such as SiO ₂ and an insulating film obtained by implanting B (boron) ions into SiO ₂ or the like is used. Generally, when using an etchant of hydrofluoric acid, when compared with the film injected with B ions to the SiO ₂ film and the SiO _2, it is known that towards the SiO ₂ film has a high rate in the etching rate .
Therefore, by using a normal insulating film as a sacrificial layer for releasing the structure of the MEMS element and using an insulating film in which B ions are implanted into the support portion, the etching time management is facilitated and the structure Can be formed with high accuracy. And since the support part of a structure can be formed accurately by using the manufacturing method of the MEMS element of this invention, the resonant frequency characteristic of a MEMS resonator etc. can be improved and the MEMS element excellent in the characteristic can be provided.

According to the present invention, there is provided a method for manufacturing a MEMS device in which a structure having a movable part and a support part that supports the movable part is provided on a semiconductor substrate, and a step of forming an insulating film on the semiconductor substrate; A step of implanting P ions into the insulating film except for a support portion region of the insulating film serving as a support portion of the structure, and implanting B ions into a support portion region of the insulating film serving as a support portion of the structure. A step of forming a movable portion of the structure in contact with a support region of the insulating film on the insulating film; and etching the insulating film implanted with the P ions as a sacrificial layer to release the structure And a step of performing.

The manufacturing method of a MEMS device, when releasing the structure, an insulating film by implanting P (phosphorus) ions such as SiO _2, etc. SiO ₂ B (boron) in the etching rate of the insulating film by implanting ions Use the difference. In general, when using a hydrofluoric acid-based etchant,
An insulating film by implanting P ions such as SiO _2, is compared with the insulating film by implanting B ions into such SiO _2, that the direction of film implanting P ions in the SiO ₂ has a high rate in the etching rate Are known.
Therefore, the insulating film in which P ions are implanted as a sacrificial layer for releasing the structure of the MEMS element and the insulating film in which B ions are implanted in the support portion are used to facilitate the etching time management. The support portion of the structure can be formed with high accuracy. And since the support part of a structure can be formed accurately by using the manufacturing method of the MEMS element of this invention, the resonant frequency characteristic of a MEMS resonator etc. can be improved and the MEMS element excellent in the characteristic can be provided.

The MEMS element of the present invention is manufactured by the above-described method for manufacturing a MEMS element.

By using the method for manufacturing a MEMS element according to the present invention, the support portion of the structure can be formed with high accuracy, so that a resonance frequency characteristic such as a MEMS resonator can be improved and a MEMS element having excellent characteristics can be provided.

The present invention is a MEMS element in which a structure having a movable part and a support part that supports the movable part is provided on a semiconductor substrate, and the support part of the structure is made of an insulating film into which B ions are implanted. It is formed.

According to this configuration, as compared with the SiO ₂ film an insulating film such as SiO ₂ and B ions are implanted in the normal SiO ₂ film or P ions are implanted, very etched to the etching solution of hydrofluoric acid By using the insulating film in which the B ions are implanted in the support portion of the structure body at a low rate, the structure body can be easily released and the support portion can be formed with high accuracy.
This makes it possible to manufacture a support portion that affects the resonance frequency characteristics such as a MEMS resonator without variation, and can provide a MEMS element having excellent characteristics.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings.
(First embodiment)

FIG. 1 is a schematic configuration diagram showing a configuration of a MEMS resonator as a MEMS element of the present embodiment. FIG. 1A is a plan view of a MEMS element, and FIG. 1B is a cross-sectional view taken along the line AA in FIG.
In FIG. 1, on a semiconductor substrate 10 made of silicon, a structure 17 including a movable portion 15 and a support portion 16 that supports the movable portion 15 is formed, and the MEMS element 1 is configured.
The movable part 15 is made of a conductive material such as polysilicon, and the support part 16 is made of silicon oxide (S
It is formed from an insulating film such as iO ₂ ).

In such a MEMS element 1, when a DC voltage is applied to the movable part 15, the movable part 1
An electrostatic force acts between the detection electrodes (not shown) formed on the semiconductor substrate 10 facing the semiconductor substrate 10. Here, when an AC voltage is further applied to the movable portion 15, the electrostatic force increases or decreases and fluctuates, and the movable portion 15 is displaced and vibrates so as to approach or move away from the semiconductor substrate 10. At this time, charge movement occurs on the surface of the detection electrode, and a current flows through the detection electrode. Since the vibration is repeated, a specific resonance frequency is output from the detection electrode.

Next, a method for manufacturing the MEMS element 1 having the above configuration will be described with reference to the drawings. In manufacturing the MEMS element, a semiconductor CMOS process is used.
2 and 3 are schematic cross-sectional views showing the manufacturing process of the MEMS element 1.

First, in FIG. 2A, an insulating film 11 which is a thermal oxide film (SiO ₂ film) is formed on a semiconductor substrate 10 made of silicon. Thereafter, as shown in FIG. 2B, a photoresist is applied on the insulating film 11, and the photoresist film 12 is patterned leaving a support portion region for forming a support portion. Then, P (phosphorus) ions are implanted from above (FIG. 2C). Thereafter, the photoresist film 12 is peeled off, so that the insulating film 11 has a normal SiO ₂ film 11 in the support portion region for forming the support portion, and a SiO ₂ film 13 in which P ions are implanted in the other portions. (FIG. 2D).

Next, as shown in FIG. 3A, a movable part forming film 14 made of polysilicon is formed.
And a photoresist is apply | coated on the movable part formation film 14, and the photoresist film 18 is patterned in the shape of a movable part (FIG.3 (b)). Thereafter, using the patterned photoresist film 18 as a mask, the movable part forming film 14 is etched, and the photoresist film 18 is peeled off to form the movable part 15 (FIG. 3C). Finally, the SiO ₂ film 1 implanted with P ions
3 is used as a sacrificial layer and is etched with a hydrofluoric acid-based etching solution.
6 is released (FIG. 3D).

Here, when the structure 17 of the MEMS element 1 is released, the difference in etching rate between the SiO ₂ film 11 and the SiO ₂ film 13 into which P ions are implanted is used. When a hydrofluoric acid-based etching solution is used, the SiO ₂ film 11 and the SiO ₂ film 13 implanted with P ions are compared.
The SiO ₂ film 13 implanted with P ions has a higher etching rate.
That is, the structure 17 is easily released by using a material having an etching rate higher than that of the support portion 16 as a sacrifice layer for releasing the movable portion 15.

Therefore, by using the SiO ₂ film 13 was injected P ion as a sacrificial layer to release the structure 17 of the MEMS device 1, it constitutes a supporting portion of SiO ₂ film 11, SiO ₂ film implanting P ions 13 is etched quickly, and compared with the conventional case where the sacrificial layer and the support portion are formed of a SiO ₂ film, it becomes easy because precise etching time management is not required. In addition, the support portion 16 of the structure 17 can be formed with high accuracy.
And since the support part 16 of the structure 17 can be accurately formed by using this manufacturing method of the MEMS element 1, the resonance frequency characteristic of a MEMS resonator etc. can be improved and the MEMS element 1 excellent in the characteristic can be provided.
(Second Embodiment)

Next, as a second embodiment, another method for manufacturing a MEMS element having the same structure as that shown in FIG. 1 will be described.
4 and 5 are schematic cross-sectional views showing the manufacturing process of the MEMS element.

First, in FIG. 4A, an insulating film 11 which is a thermal oxide film (SiO ₂ film) is formed on a semiconductor substrate 10 made of silicon. After that, as shown in FIG. 4B, the photoresist film 20 is patterned by applying a photoresist on the insulating film 11 and leaving the photoresist other than the support portion region where the support portion is formed. Then, B (boron) ions are implanted from above (FIG. 4C). Thereafter, the photoresist film 20 is peeled off, so that the insulating film 11 is formed into the SiO ₂ film 21 in which B ions are implanted in the support portion region that forms the support portion, and the SiO ₂ film 11 formed in other portions. They are separated (FIG. 4 (d)).

Next, as shown in FIG. 5A, a movable part forming film 14 made of polysilicon is formed.
And a photoresist is apply | coated on the movable part formation film 14, and the photoresist film 18 is patterned in the shape of a movable part (FIG.5 (b)). Thereafter, using the patterned photoresist film 18 as a mask, the movable part forming film 14 is etched, and the photoresist film 18 is peeled off to form the movable part 15 (FIG. 5C). Finally, the SiO ₂ film 11 is used as a sacrificial layer and etched with a hydrofluoric acid-based etchant to form a structure 23 composed of the movable portion 15 and the support portion 22.
Is released (FIG. 5D).

Here, in the release of the structure 23 of the MEMS element, the difference in etching rate between the SiO ₂ film 11 and the SiO ₂ film 21 into which B ions are implanted is used. When a hydrofluoric acid-based etching solution is used, the SiO ₂ film 11 and the SiO ₂ film 21 implanted with B ions are compared.
The iO ₂ film 11 has a higher etching rate. That is, the structure 23 is easily released by using a material having an etching rate higher than that of the support portion 22 as a sacrificial layer for releasing the movable portion 15.

Therefore, the SiO ₂ film 11 is used as a sacrificial layer for releasing the structure 23 of the MEMS element.
By configuring in SiO ₂ film 21 was used, it was injected B ions to the support portion, the SiO ₂ film 1
1 is etched quickly, and compared with the conventional case where the sacrificial layer and the support portion are formed of SiO ₂ film, it becomes easy without requiring precise etching time management. In addition, the support portion 22 of the structure 23 can be formed with high accuracy.
And since the support part 22 of the structure 23 can be accurately formed by using this manufacturing method of a MEMS element, the resonance frequency characteristic of a MEMS resonator etc. can be improved and the MEMS element excellent in the characteristic can be provided.
(Third embodiment)

Next, as a third embodiment, another method for manufacturing a MEMS element having the same structure as that shown in FIG. 1 will be described.
FIG. 6 is a schematic cross-sectional view showing the manufacturing process of the MEMS element. In this embodiment,
Since FIG. 2A to FIG. 2D described in the first embodiment are the same process, description thereof will be omitted, and subsequent processes will be described with reference to FIG.

In FIG. 2 (d), the insulating film is separated into a SiO ₂ film 11 in the support portion region forming the support portion, and a SiO ₂ film 13 in which P ions are implanted in the other portions.
Thereafter, as shown in FIG. 6A, the photoresist film 20 is patterned by applying a photoresist and leaving the photoresist other than the support region where the support is formed. And
Then, B (boron) ions are implanted. Thereafter, the photoresist film 20 is peeled off, so that the insulating film is an SiO ₂ film 25 in which B ions are implanted in the support region forming the support portion, and an SiO ₂ film 13 in which P ions are implanted in other portions. (FIG. 6B).

Next, as shown in FIG. 6C, a movable part forming film 14 made of polysilicon is formed, a photoresist is applied on the movable part forming film 14, and a photoresist film 18 is formed in the shape of the movable part. Pattern. Thereafter, using the patterned photoresist film 18 as a mask, the movable part forming film 14 is etched, and the photoresist film 18 is peeled off to form the movable part 15 (FIG. 6D). Finally, the SiO ₂ film 13 implanted with P ions is used as a sacrificial layer, and etching is performed with a hydrofluoric acid-based etchant to release the structure 27 including the movable portion 15 and the support portion 26 (FIG. 6E). .

Here, in the release of the structure 27 of the MEMS element, the SiO ₂ film 1 into which P ions are implanted.
3 and the difference in etching rate between the SiO ₂ film 25 implanted with B ions is used. When a hydrofluoric acid-based etching solution is used, the SiO ₂ film 13 implanted with P ions and the SiO ₂ film 25 implanted with B ions are compared, and the SiO ₂ film 13 implanted with P ions is etched. The rate is high. That is, by using a material having an etching rate higher than that of the support portion 26 as a sacrificial layer for releasing the movable portion 15, the structure 27 can be easily released.

Therefore, the SiO ₂ film 13 implanted with P ions is used as a sacrificial layer for releasing the structure 27 of the MEMS element, and the P ₂ ions are implanted by forming the SiO ₂ film 25 implanted with B ions in the support portion. The etched SiO ₂ film 13 is quickly etched, and it becomes easy because it is not necessary to manage the etching time precisely as compared with the conventional case where the sacrificial layer and the support portion are formed of the SiO ₂ film. In addition, the support portion 26 of the structure 27 can be formed with high accuracy.
And since the support part 26 of the structure 27 can be accurately formed by using this manufacturing method of a MEMS element, the resonance frequency characteristic of a MEMS resonator etc. can be improved and the MEMS element excellent in the characteristic can be provided.
(Fourth embodiment)

Next, as a fourth embodiment, a MEMS element in which a structure and a peripheral circuit for driving the structure are provided on the same semiconductor substrate will be described.
FIG. 7 is a schematic configuration diagram showing a configuration of a MEMS resonator as a MEMS element according to the present invention. 7A is a plan view of the MEMS element, and FIG. 7B is a cross-sectional view taken along the line BB in FIG. 7A.

In FIG. 7, the MEMS element 100 has an opening 138, and a movable part 115 made of polysilicon and a support part 11 formed of an insulating film on a semiconductor substrate 110 in the opening 138.
6 is formed. In addition, an insulating film 111 that is a thermal oxide film formed on the semiconductor substrate 110 is formed around the structure 117, and an interlayer insulating film 132, a wiring 133, an interlayer insulating film 134, and a passivation film are formed thereon. 135 are sequentially stacked. The wiring 133 is made of Al or Cu and is a circuit element formed on the semiconductor substrate 110 (
(Not shown).

Next, a method for manufacturing the MEMS element 100 having the above configuration will be described with reference to the drawings. In manufacturing the MEMS element, a semiconductor CMOS process is used.
8 and 9 are schematic cross-sectional views showing the manufacturing process of the MEMS element 100.

First, in FIG. 8A, a thermal oxide film (SiO 2) is formed on a semiconductor substrate 110 made of silicon.
Forming an insulating film 111 is a ₂ layer). Next, a photoresist is applied thereon, and the photoresist film 130 is patterned while leaving the photoresist in the support portion region for forming the support portion and the photoresist in the portion for forming the peripheral circuit. Then, P ions are implanted from above (FIG. 8B).
Next, the photoresist film 130 is peeled off, and the insulating film is separated into the SiO ₂ film 111 and the SiO ₂ film 113 into which P ions are implanted. Further, the photoresist film 131 is patterned by leaving a photoresist other than the support region where the support is formed by applying a photoresist. Next, B ions are implanted from above (FIG. 8D). Thereafter, the photoresist film 131 is peeled off, so that the insulating film is an SiO ₂ film 111, and P ions are implanted into S.
The iO ₂ film 113 and the SiO ₂ film 121 into which B ions are implanted are separated.

Next, a movable part forming film is formed and a photoresist is applied and patterned into the shape of the movable part. Then, the movable part forming film is etched, the photoresist film 131 is peeled off, and the movable part 115 is formed (FIG. 8E).
Thereafter, as shown in FIG. 8F, the interlayer insulating film 1 such as SiO ₂ is formed on the movable portion 115.
32 is formed, and a wiring 133 is formed thereon by patterning.

Next, as shown in FIG. 9A, an interlayer insulating film 134 such as a SiO ₂ film is formed on the wiring 133.
And a passivation film 13 such as a silicon nitride (Si ₃ N ₄ ) film is formed thereon.
5 is formed.
Subsequently, a photoresist film 136 is formed on the passivation film 135, and the movable part 1
Patterning is performed so as to remove the portion located above 15 (FIG. 9B).

Thereafter, as shown in FIG. 9C, the movable portion 1 is formed using the photoresist film 136 as a mask.
The opening 137 is formed by dry etching (anisotropic etching) of the passivation film 135 and the interlayer insulating films 134 and 132 located above 15 to the surface of the SiO ₂ film 113 implanted with at least P ions.
Then, as shown in FIG. 9D, the movable portion 115 is subjected to wet etching (isotropic etching) with a hydrofluoric acid-based etchant using the SiO ₂ film 113 implanted with P ions as a sacrificial layer.
And the structure 117 including the support part 116 is released. At this time, a new opening 138 is formed. Finally, the photoresist film 136 is peeled off to complete the MEMS element 100.

Here, when the structure 117 of the MEMS element 100 is released, Si ions implanted with P ions are used.
The difference in etching rate between the O ₂ film 113 and the SiO ₂ film 121 implanted with B ions is used. When a hydrofluoric acid-based etching solution is used, the SiO ₂ film 113 into which P ions are implanted
And the SiO ₂ film 121 implanted with B ions, the etching rate of the SiO ₂ film 113 implanted with P ions is higher. That is, the structure 117 is easily released by using a material having an etching rate higher than that of the support portion 116 as a sacrificial layer for releasing the movable portion 115.

From this, by using the SiO ₂ film 113 implanted with P ions as a sacrificial layer for releasing the structure 117 of the MEMS element 100, the support portion is composed of the SiO ₂ film 121 implanted with B ions. The implanted SiO ₂ film 113 is etched quickly, and it becomes easy because it is not necessary to manage the etching time precisely compared to the conventional case where the sacrificial layer and the support portion are formed of a normal SiO ₂ film. In addition, the support portion 116 of the structure 117 can be formed with high accuracy.
And since the support part 116 of the structure 117 can be accurately formed by using this manufacturing method of a MEMS element, the resonance frequency characteristics of a MEMS resonator etc. can be improved and the MEMS element 100 excellent in the characteristics can be provided.

In this embodiment, the amount of P ions and B ions implanted into the insulating film is preferably about 1 × 10 ¹⁹ ions / cm ² .
In the above embodiment, silicon is used as the material for the semiconductor substrate.
SiGe, SiC, SiSn, PbS, GaAs, InP, GaP, GaN, ZnSe, or the like can be used.
Further, although the movable portion is formed of polysilicon in this embodiment, it can be implemented using another gate electrode material silicided in a CMOS transistor.
Further, the MEMS element can be used in an MEMS resonator, an actuator using a MEMS technology, a gyro sensor, an acceleration sensor, and the like.

It is a schematic block diagram of the MEMS element by the 1st Embodiment of this invention, (a) is a top view of a MEMS element, (b) is sectional drawing which follows the AA disconnection of the figure (a). FIG. 3 is a schematic cross-sectional view showing a manufacturing process of the MEMS element according to the first embodiment. FIG. 3 is a schematic cross-sectional view showing a manufacturing process of the MEMS element according to the first embodiment. The schematic sectional drawing which shows the manufacturing process of the MEMS element in 2nd Embodiment. The schematic sectional drawing which shows the manufacturing process of the MEMS element in 2nd Embodiment. The schematic sectional drawing which shows the manufacturing process of the MEMS element in 3rd Embodiment. It is a schematic block diagram of the MEMS element by the 4th Embodiment of this invention, (a) is a top view of a MEMS element, (b) is sectional drawing which follows the BB disconnection of the figure (a). The schematic sectional drawing which shows the manufacturing process of the MEMS element in 4th Embodiment. The schematic sectional drawing which shows the manufacturing process of the MEMS element in 4th Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... MEMS element, 10 ... Semiconductor substrate, 11 ... Insulating film, 13 ... Si which implanted P ion
O ₂ film, 14 ... movable part forming film, 15 ... movable part, 16 ... support part, 17 ... structure, 21 ... SiO ₂ film implanted with B ions, 22 ... support part, 23 ... structure, 25 ... B S implanted with ions
iO ₂ film, 26 ... support portion, 27 ... structure, 100 ... MEMS element including circuit element, 11
0 ... semiconductor substrate, 111 ... insulating film, 113 ... SiO ₂ film implanting P ions, 121 ... B
Ion-implanted SiO ₂ film 115, movable part 116, support part 117, structure 13
2 ... interlayer insulating film, 133 ... wiring, 134 ... interlayer insulating film, 135 ... passivation film, 1
38 ... opening.

Claims (5)

M having a structure having a movable part and a support part for supporting the movable part provided on a semiconductor substrate
A method of manufacturing an EMS element,
Forming an insulating film on the semiconductor substrate;
Injecting P ions into the insulating film except for a supporting part region of the insulating film to be a supporting part of the structure;
Forming a movable portion of the structure on the insulating film in contact with a support region of the insulating film;
Etching the insulating film implanted with the P ions as a sacrificial layer to release the structure;
A method for manufacturing a MEMS device, comprising: M having a structure having a movable part and a support part for supporting the movable part provided on a semiconductor substrate
A method of manufacturing an EMS element,
Forming an insulating film on the semiconductor substrate;
Implanting B ions into a support portion region of the insulating film to be a support portion of the structure;
Forming a movable portion of the structure on the insulating film in contact with a support region of the insulating film;
Etching the insulating film as a sacrificial layer to release the structure;
A method for manufacturing a MEMS device, comprising: M having a structure having a movable part and a support part for supporting the movable part provided on a semiconductor substrate
A method of manufacturing an EMS element,
Forming an insulating film on the semiconductor substrate;
Injecting P ions into the insulating film except for a supporting part region of the insulating film to be a supporting part of the structure;
Implanting B ions into a support portion region of the insulating film to be a support portion of the structure;
Forming a movable portion of the structure on the insulating film in contact with a support region of the insulating film;
Etching the insulating film implanted with the P ions as a sacrificial layer to release the structure;
A method for manufacturing a MEMS device, comprising: MEMS manufactured with the manufacturing method of the MEMS element as described in any one of Claims 1 thru | or 3.
element. M having a structure having a movable part and a support part for supporting the movable part provided on a semiconductor substrate
An EMS element,
The MEMS element according to claim 1, wherein the support portion of the structure is formed of an insulating film into which B ions are implanted.

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