JP2006121042A - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the semiconductor device, permitting simple processes and thinning thereof. <P>SOLUTION: On a substrate with a metal wiring pattern coated with an electrically insulating resin formed on the substrate, an integrated circuit that is an electronic component is made to face a metal wiring pattern electrode coated, with the predetermined electrically insulating resin that has been positioned. The electronic component removes the electrically insulating resin located on the electrode for jointing to bond with the electrode of the substrate. The integrated circuit is sucked to the head of a flip-chip bonding apparatus, and heat, load and ultrasonic vibrations are impressed thereon, thereby, the electrically insulating resin located on the predetermined electrode is removed, and conductive bumps bond or contact with the metal wiring pattern and conduction is obtained. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a semiconductor device.

  In recent years, with the trend toward higher performance and smaller size of electronic devices, there is a further demand for higher density and higher functionality of semiconductor devices. Modules equipped with semiconductor devices are also required to support high density and high functionality. In order to mount semiconductor devices with high density, application of double-sided circuit boards and multilayer circuit boards is being developed.

For example, conductive bumps are formed on a semiconductor chip, and the bump forming portion is applied with a thermosetting resin that can be melted by heating at the time of flip chip connection. In the mounting method of the semiconductor device, the bumps and the printed wiring board are positioned so as to face each other. At this time, the metal wiring pattern electrode portion on the printed wiring board is peeled off by the etching or the like, and the metal is exposed. Next, the semiconductor device is mounted on the printed wiring board and heated while being pressed, so that flip chip connection by bumps and gelation of the thermosetting resin layer are performed simultaneously (for example, see Patent Document 1).
JP-A-11-307586

  However, the conventional method has a problem that the manufacturing process is complicated because the bump forming portion of the semiconductor device needs to be coated with a thermosetting resin that can be melted by heating. Further, since the printed wiring board electrode part is pressed through the thermosetting resin on the bumps, the thermosetting resin is locally interposed between the bumps and the printed wiring board electrode part, so that the connection reliability is ensured. Had reduced sex. Accordingly, an object of the present invention is to provide a semiconductor device and a method for manufacturing the semiconductor device which can be significantly simplified and can be thinned.

  The present invention is at least one semiconductor device, wherein a junction portion of the at least one semiconductor device is opposed to and brought into contact with a junction electrode portion of a substrate on which a metal pattern electrically insulated by a resin is formed. To expose the bonding electrode portion of the substrate on which the metal pattern in which the bonding portion of the at least one semiconductor device is electrically insulated by the resin is formed, and the bonding portion of the exposed bonding electrode portion and the semiconductor device is electrically To obtain a joint.

  Specifically, an electronic component having an external connection electrode and a metal foil that has a thickness that allows the external connection electrode of the electronic component to be embedded and is coated with an electrically insulating resin along a direction perpendicular to the thickness direction are formed at a predetermined position. A step of disposing an external connection electrode formation surface of the electronic component on the lower side and disposing the external connection electrode formation surface opposite to a metal foil covered with an electrically insulating resin at a predetermined position of the substrate; heating the metal foil; It comprises a step of applying pressure and ultrasonic waves, a step of removing the electrically insulating resin and exposing the metal foil surface for connection, and a step of bringing the external connection electrode and the metal foil into contact and conducting electrical connection.

  In addition, an electronic component having an external connection electrode and a metal foil having a thickness that allows the external connection electrode of the electronic component to be embedded and coated with an electrically insulating resin along the thickness direction are formed at predetermined positions. Placing the substrate with the external connection electrode formation surface of the electronic component facing downward and the external connection electrode formation surface facing the metal foil coated with the electrically insulating resin at a predetermined position of the substrate, and heating and heating the metal foil. The method includes a step of applying pressure and ultrasonic waves, a step of removing the electrically insulating resin and exposing the metal foil surface for connection, and a step of electrically connecting the external connection electrode and the metal foil to form an electrical connection.

  Also, an electronic component having external connection electrodes, and a thickness that allows the external connection electrodes of the electronic components to be embedded, are covered with a thermosetting electrical insulating resin that can be melted by heating along a direction perpendicular to the thickness direction. The substrate on which the formed metal foil is formed is a metal coated with a thermosetting electrical insulating resin that can be melted by heating at a predetermined position of the substrate with the external connection electrode forming surface of the electronic component facing down The step of placing the foil opposite to the foil, the step of applying heat and pressure to the metal foil by heating, and heating to melt the thermosetting electrical insulating resin at a temperature below the curing temperature to expose the metal foil surface for connection A process, a process in which the external connection electrode and the metal foil are in contact with each other for electrical conduction, and a process in which the external connection electrode and the metal foil are in a contact with and in electrical conduction to heat and cure the thermosetting electrical insulating resin by heating at a curing temperature. When, Ranaru.

  As a meltable thermosetting electrical insulating resin, it is coated with a resin composed of a mixture of an inorganic insulating filler and a thermosetting resin, and the electronic components are pushed in while the thermosetting electrical insulating resin is heated and melted below the curing temperature. .

  An electronic component having a conductive protrusion on its external connection electrode is prepared.

  When embedding the electronic component in the electrical insulating resin, the metal foil perpendicular to the substrate thickness direction is electrically connected by interposing conductive particles between the external connection electrodes of the electronic component.

  Further, when embedding the electronic component in the electrically insulating resin, the metal foil perpendicular to the substrate thickness direction is electrically connected by interposing an anisotropic conductive film between the external connection electrodes of the electronic component.

  Further, when embedding the electronic component in the electrical insulating resin, an anisotropic conductive paste is interposed between the external connection electrodes of the electronic component to electrically connect the metal foil perpendicular to the substrate thickness direction.

  When embedding a plurality of electronic components in an electrically insulating resin, conductive components are interposed between the external connection electrodes of these electronic components to electrically connect the electronic components adjacent in the substrate thickness direction.

  In addition, when embedding a plurality of electronic components in an electrically insulating resin, an electronic component adjacent in the substrate thickness direction is electrically connected by interposing an anisotropic conductive film between external connection electrodes of these electronic components.

  In addition, when embedding a plurality of electronic components in an electrically insulating resin, an anisotropic conductive paste is interposed between the external connection electrodes of these electronic components to electrically connect adjacent electronic components in the substrate thickness direction. .

  Also, an electronic component having an external connection electrode, and a step of preparing an electrical insulation resist in which a metal foil is formed along a thickness direction of the external connection electrode of the electronic component at a predetermined position of the external connection electrode of the electronic component; The step of disposing the electronic component with the external connection electrode formation surface facing downward and the external connection electrode formation surface facing the metal back surface at a predetermined position of the electrical insulation resist, and the electrical insulation resist until it contacts the metal foil of the electrical insulation resist And a step of applying heat and pressure ultrasonic waves to the surface and eliminating the electrical connection between the external connection electrode and the metal foil.

  Also, a step of placing a bump electrode of an electronic component on the upper surface of an electrical insulation resist or electrical insulation resin formed on one surface of a substrate having a metal wiring pattern, the bump electrode, and the electrical insulation resist or electrical insulation resin A step of heating the contact portion and applying pressure and applying an ultrasonic wave in the thickness direction of the electronic component and the substrate, and a step of eliminating a portion where the bump electrode of the electrically insulating resist or the electrically insulating resin is in contact by applying the ultrasonic wave And a step of bringing the bump electrode and the metal wiring into contact with each other.

  The semiconductor device of the present invention faces and contacts the bumps of the semiconductor device while applying heat, ultrasonic waves and a load, and the back surface of the bonding electrode portion of the substrate on which the metal pattern electrically insulated by the resin is formed. By exposing the bonding electrode portion of the substrate on which the metal pattern in which the bonding portion of the semiconductor device is electrically insulated by the resin is formed and the exposed bonding electrode portion and the bonding portion of the semiconductor device are electrically bonded, The step of exposing the electrode portion of the metal pattern electrically insulated by the resin by etching or the like is eliminated, and the semiconductor device can be manufactured by a significantly simpler process.

  In addition, at the time of bonding, an ultrasonic wave having a frequency of 40 KHz to 60 KHz and an amplitude of 3 μm to 5 μm is applied for 0.1 sec to 0.5 sec. Since the metal surface of the connecting portion appears and the metal atoms are directly bonded to each other, connection reliability that cannot be obtained only by applying conventional heat and load can be obtained.

    In the semiconductor device of the present invention, the semiconductor chip is flip-chip connected by mounting face-down with the bump electrode surface facing the chip support surface of the chip support substrate. FIG. 1 is a manufacturing process diagram showing a semiconductor device manufacturing method according to an example of an embodiment of the present invention, and FIG. 3 is a schematic diagram of a semiconductor device mounting structure according to a preferred embodiment of the present invention.

    In flip chip connection, first, conductive bumps are formed on the pad (surface electrode) side of the semiconductor chip, and the semiconductor chip and the chip support substrate on which the metal pattern electrically insulated by the resin is formed are opposed to each other. The conductive bumps of the semiconductor chip and the wiring electrodes are aligned, and the semiconductor chip is mounted. Thereafter, by applying heat, load, and ultrasonic waves from the back surface of the chip, the bonding electrode portion electrically insulated by the resin is exposed, and the conductive bump and the wiring electrode of the substrate are connected.

  In a preferred embodiment of the present invention, the electronic component includes an integrated circuit and a chip component. In a further preferred embodiment of the present invention, the metal is constituted by a metal selected from the group consisting of copper, aluminum, silver, gold, platinum and palladium. In a further preferred embodiment of the present invention, the metal is constituted by copper or aluminum.

In a further preferred embodiment of the present invention, the resin is polyethylene (PE), polypropylene (PP), polystyrene (PS), acrylonitrile / styrene resin (AS).
), Acrylonitrile / butadiene / styrene resin (ABS), methacrylic resin (PMMA), vinyl chloride (PVC), polyamide (PA), polyacetal (POM), ultra high molecular weight polyethylene (UHPE), polybutylene terephthalate (PBT), GF Reinforced polyethylene terephthalate (GF-PET), polymethylpentene (TPX), polycarbonate (PC), modified polyphenylene ether (PPE), polyphenylene sulfide (PPS), polyether ether ketone (PEEK), liquid crystal polymer (LCP), polytetra A group consisting of fluoroethylene (PTFE), polyetherimide (PEI), polyarylate (PAR), polysulfone (PSF), polyethersulfone (PES), and polyamideimide (PAI) It is constituted by a thermoplastic resin selected. In a further preferred embodiment of the present invention, the resin contains a filler. According to a further preferred embodiment of the present invention, a resin material can be selected in consideration of mechanical properties, thermal conductivity, thermal expansion coefficient, cost, etc. by adding a filler to the resin.

  In a further preferred embodiment of the present invention, the resin is composed of a solder resist material (epoxy-based, acrylic-based, urethane-based resin).

  In a further preferred embodiment of the present invention, the resin is composed of a thermosetting resin that can be melted by heating at the time of flip chip connection.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 3 is a schematic diagram of a mounting structure of a semiconductor device according to a preferred embodiment of the present invention.

  As shown in FIG. 3, first, the metal circuit pattern 4 is formed on the electrical insulating resin 3, and the integrated circuit 1 which is an electronic component is positioned on the substrate whose entire surface is covered with the electrical insulating resin. It is made to face a predetermined substrate electrode part. Here, the electronic component is bonded to the electrode covered with the electric insulating resin of the substrate, and it is necessary to partially remove the electric insulating resin on the bonding portion electrode.

  As shown in FIG. 4, the integrated circuit 1 is adsorbed by the head 5 of the flip chip bonding apparatus, and the electrical insulating resin 3 on the predetermined electrode is eliminated by heat, load and ultrasonic vibration, and the conductive bumps 2 are formed by metal wiring. Join or contact with pattern 4. According to this embodiment, the bumps of the integrated circuit 1 are made to be electrically insulated by applying heat and load to the electrically insulating resin 3 and ultrasonic waves having a frequency of 40 kHz to 60 kHz and an amplitude of 3 μm to 5 μm for 0.1 seconds to 0.5 seconds. The metal electrode part is partly removed, and the exposed surface of the bonding part of the semiconductor device and the surface of the bonding electrode part of the substrate disappeared, and the surface of the electrode connection part metal appears, and the metal atoms appear. By directly bonding, the semiconductor device can be manufactured by electrically bonding and contacting the metal wiring pattern electrode. Therefore, the semiconductor device can be manufactured by a simple process.

  Thereby, the manufacturing process of the semiconductor device can be simplified. According to the present embodiment, after the circuit pattern is formed on the substrate constituting the semiconductor device, the solder resist can be collectively applied on the circuit pattern for corrosion prevention and protection. Compared with the process of selectively applying, the manufacturing process can be greatly simplified and the manufacturing can be performed at low cost.

  Furthermore, according to this embodiment, even when the metal of the circuit pattern is composed of a metal selected from the group consisting of copper, aluminum, silver, gold, platinum and palladium, the solder resist is immediately formed after the circuit pattern is formed. Since the entire surface is applied, the metal surface is kept at a very high cleanliness, so that the bonding strength of the electronic component mounting in the subsequent process is higher than the selective application that exposes the electrodes, and it is also reliable in the long-term durability test. The results of sex test evaluation are also good.

  Furthermore, according to this embodiment, since the solder resist is applied to the entire surface immediately after the circuit pattern is formed, the cleanliness of the substrate electrode is reduced before mounting the electronic component as compared with the case of selective application exposing the electrode part. In order to improve this, a dry cleaning process is not necessary, and it is not only necessary to introduce a dry cleaning apparatus into the electronic component mounting equipment, but also the process can be shortened.

  Furthermore, according to this embodiment, if the electrical insulating resin is made of polyethylene (PE), polypropylene (PP), polystyrene (PS) resin, and the thickness of the electrically insulating resin is the same as the height of the conductive bump 2, A semiconductor device can be manufactured by embedding conductive bumps in an electrically insulating resin and electrically connecting and contacting circuit pattern electrodes. Therefore, an underfill sealing process is not required, and a semiconductor with high connection reliability. The device can be manufactured.

  Furthermore, according to this embodiment, the semiconductor device can be manufactured by embedding the electronic component in the electrical insulating resin in the electrical insulating resin and electrically connecting and contacting the circuit pattern electrode. In addition, if a thermosetting resin that can be melted by heating at the time of flip chip connection is used, the resin starts to harden after electrical connection is obtained.

  In this embodiment, a thermoplastic resin is used as the electrical insulating resin 3. As a result, the semiconductor device can be thinned.

  According to this embodiment, the semiconductor device is configured by the semiconductor device of the first embodiment and the electrical insulating resin 3 incorporating the integrated circuit 1A, and the electronic component is buried in the electrical insulating resin 3. A circuit pattern is formed on the substrate, and an electronic component is mounted on the circuit pattern, which makes it possible to significantly reduce the thickness as compared with a conventional electronic component built-in substrate covered with a sealing resin. .

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 5 is a schematic diagram of a mounting structure of a semiconductor device according to a further preferred embodiment of the present invention.

  As shown in FIG. 5, the semiconductor device of the second embodiment is in contact with the wiring pattern on the side surface opposite to the electrode surface on which the integrated circuit 1 is flip-chip bonded in the semiconductor device manufactured by the method of the first embodiment. The electrical insulating resin 3 is made of a resin that can be melted by heating, with the thickness of the electrical insulating resin 3 set to the height of the conductive bump 2A. First, in the semiconductor device manufactured by the method of the first embodiment, the integrated circuit 1A, which is an electronic component, is opposed to a predetermined predetermined electrode on the wiring pattern opposite to the electrode surface on which the integrated circuit 1 is flip-chip bonded. . Here, the terminal of the electronic component is joined via the electrically insulating resin 3 material between the electrodes, and it is necessary to partially exclude the electrically insulating resin 3 material on the joint electrode. As in the first embodiment, when the integrated circuit 1 is flip-chip bonded, the electrically insulating resin 3 composed of a resin that can be melted by heating on a predetermined electrode is softened by heat, and then a load is applied. However, a part of the three electrically insulating resins can be eliminated. Further, since the load is applied while applying ultrasonic waves, the meltable resin locally interposed between the bump and the printed wiring board electrode portion is completely eliminated, and the exposed joint portion and substrate of the semiconductor device are removed. The unevenness of 1 μm to 2 μm on the surface of the bonding electrode portion disappears and the true surface of the electrode connecting portion metal appears, and metal atoms directly contact with each other, thereby contacting or bonding to the conductive bump 2A.

  In this embodiment, a thermoplastic resin is used as the electrically insulating resin 3 material. As a result, the semiconductor device can be thinned. According to this embodiment, the semiconductor device is configured by the electrically insulating resin 3 incorporating the integrated circuit 1A and the metal wiring pattern 4, and the electronic component is buried in the electrically insulating resin 3, so that In addition, a circuit pattern is formed, and an electronic component is mounted on the circuit pattern, so that the thickness can be significantly reduced as compared with a conventional electronic component built-in substrate covered with a sealing resin.

Furthermore, according to this embodiment, the semiconductor device can be manufactured by causing the electronic component to be buried in the electrically insulating resin 3 by heat, load, and ultrasonic vibration, and to be electrically connected and contacted with the circuit pattern electrode. Therefore, it is possible to manufacture a semiconductor device with a high mounting density by a simple process. Further, it is not necessary to manufacture through holes that are necessary for a double-sided mounting board or a multilayer mounting board in advance, and a very inexpensive double-sided and multilayer mounting board can be manufactured.
Furthermore, according to the present embodiment, an electronic component is buried in an electrically insulating resin, and a semiconductor device can be manufactured by electrically joining and contacting a circuit pattern electrode, so that an underfill sealing step is not required. Thus, a semiconductor device with high connection reliability can be manufactured.

  Furthermore, according to this embodiment, since the electronic component is buried in the electrical insulating resin and electrically joined and brought into contact with the back surface of the circuit pattern electrode, the semiconductor device can be manufactured. If a thermosetting resin that can be melted is used, the resin begins to harden after electrical connection is obtained, so that the effect of contact bonding can also be obtained by shrinkage during curing.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  As shown in FIG. 6, first, an integrated circuit 1 that is an electronic component is opposed to a predetermined substrate electrode portion that is positioned on a substrate on which an electrically insulating resist 6 is formed on a metal wiring pattern 4. Here, the electronic component is bonded to the electrode covered with the electric insulating resist on the substrate, and it is necessary to partially remove the electric insulating resist on the bonding portion electrode.

  According to this embodiment, the bumps of the integrated circuit 1 are made of electrically insulating resin by applying heat and load to the electrically insulating resist 3 and ultrasonic waves having a frequency of 40 kHz to 60 kHz and an amplitude of 3 μm to 5 μm for 0.1 seconds to 0.5 seconds. The metal electrode part is partly removed, and the exposed surface of the bonding part of the semiconductor device and the surface of the bonding electrode part of the substrate is eliminated. By directly bonding, the semiconductor device can be manufactured by electrically bonding and contacting the metal wiring pattern electrode. Therefore, the semiconductor device can be manufactured by a simple process.

  Thereby, the manufacturing process of the semiconductor device can be simplified. According to the present embodiment, after the circuit pattern is formed on the substrate constituting the semiconductor device, the solder resist can be collectively applied on the circuit pattern for corrosion prevention and protection. Compared with the process of selectively applying, the manufacturing process can be greatly simplified and the manufacturing can be performed at low cost.

  Furthermore, according to this embodiment, even when the metal of the circuit pattern is composed of a metal selected from the group consisting of copper, aluminum, silver, gold, platinum, and palladium, the solder resist is immediately formed after the circuit pattern is formed. Since the entire surface is applied, the cleanliness of the metal surface is kept at a very high value, so that the bonding strength of the electronic component mounting in the subsequent process is higher than the selective application that exposes the electrode part, and the reliability in the long-term durability test The result of the sex test is also good.

  The embodiments and examples of the present invention have been described with reference to the drawings. A semiconductor device to which the present invention is applied is a terminal of an electronic component in which heat, load and ultrasonic vibration are applied to an electrode coated with an electrically insulating resin to partially remove the electrically insulating resin on the electrode. And a substrate are bonded or brought into contact with each other, and a bonding portion can be underfill sealed or electronic component sealed.

  In addition, when the bonding or contact method is alloy connection by Au-Al, Au-Sn, In-Au, by crimp connection by Au-Au, Al-Al, Cu-Cu, by ACF, ACP, NCP, NCF In the case of the pressure connection and the fusion connection by solder, the present invention is not limited to all connection methods.

  In addition, in the bonding or contact method, the resin interposed when the electronic component is connected to the substrate is semi-thermosetting, thermosetting or UV curable, non-conductive, or conductive. Whether the size and material of the conductive particles, the particle composition is a metal, a metal-plated resin or metal particle, an insulating-coated metal-plated resin or metal particle, and the like are factors that limit the present invention. Don't be.

  The present invention can be used in a semiconductor device suitable for flip chip bonding mounting on a substrate used in an electric / electronic device.

It is a manufacturing process figure which shows the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a manufacturing process figure which shows the manufacturing method of the semiconductor device which concerns on a prior art example. FIG. 6 is a cross-sectional view after the integrated circuit according to the embodiment of the present invention is disposed opposite to a substrate on which a metal wiring pattern coated with an electrical insulating resin is formed, the electrical insulating resin is excluded, and the metal wiring pattern electrode is joined. is there. The semiconductor device when the integrated circuit according to the embodiment of the present invention and the substrate on which the metal wiring pattern is formed are opposed to each other, and the integrated circuit is sucked by a flip chip bonding apparatus head, and the conductive bump and the wiring are aligned. It is sectional drawing which shows a manufacturing method. Sectional drawing which shows the double-sided mounting which mounted the integrated circuit on the back surface of the electrode in which the integrated circuit was mounted in FIG. 1 to the board | substrate of the semiconductor device which joined the integrated circuit which concerns on embodiment of this invention with the manufacturing method shown in FIG. It is. It is sectional drawing after joining the integrated circuit based on embodiment of this invention to the board | substrate with which the metal wiring pattern was formed from the direction opposite to the surface with a metal wiring pattern electrode.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,1A Integrated circuit 2,2A Conductive bump 3 Electrical insulation resin 4 Metal wiring pattern 5 Flip chip bonding apparatus head 6 Electrical insulation resist

Claims (13)

An electronic component having an external connection electrode, and a metal foil having a thickness capable of embedding the external connection electrode of the electronic component and coated with an electrically insulating resin along a direction perpendicular to the thickness direction are formed at a predetermined position. Placing the substrate with the external connection electrode formation surface of the electronic component facing down and the external connection electrode formation surface facing the metal foil coated with the electrically insulating resin at a predetermined position of the substrate;
Applying heat, pressure and ultrasonic waves to the metal foil;
Removing the electrical insulating resin and exposing a metal foil surface for connection;
And a step of bringing the external connection electrode and the metal foil into contact with each other for electrical conduction. An electronic component having an external connection electrode, and a metal foil having a thickness capable of embedding the external connection electrode of the electronic component and coated with an electrically insulating resin along a direction perpendicular to the thickness direction are formed at a predetermined position. Placing the substrate with the external connection electrode formation surface of the electronic component facing down and the external connection electrode formation surface facing the metal foil coated with the electrically insulating resin at a predetermined position of the substrate;
Applying heat, pressure and ultrasonic waves to the metal foil;
Removing the electrical insulating resin and exposing a metal foil surface for connection;
A method of manufacturing a semiconductor device comprising: a step of electrically connecting the external connection electrode and the metal foil to each other by metal bonding. An electronic component having an external connection electrode and a thickness capable of embedding the external connection electrode of the electronic component are covered with a thermosetting electrical insulating resin that can be melted by heating along a direction perpendicular to the thickness direction at a predetermined position. The substrate on which the metal foil is formed is coated with a thermosetting electrical insulating resin which can be melted by heating at a predetermined position of the substrate with the external connection electrode forming surface of the electronic component facing down. A step of disposing the metal foil opposite to the metal foil,
Applying heat and pressure to the metal foil by the heating;
Heating and melting the thermosetting electrical insulating resin at a temperature equal to or lower than the curing temperature to expose the metal foil surface for connection;
A step of bringing the external connection electrode and the metal foil into contact with each other for electrical conduction;
A method of manufacturing a semiconductor device comprising: a step of heating and curing the thermosetting electrical insulating resin at a curing temperature by the heating in a state where the external connection electrode and the metal foil are in electrical contact with each other.   The meltable thermosetting electrical insulating resin is coated with a resin composed of a mixture of an inorganic insulating filler and a thermosetting resin, and the thermosetting electrical insulating resin is melted by heating at a curing temperature or lower. 4. The method of manufacturing a semiconductor device according to claim 3, wherein a part is pushed in. As the electronic component, prepare an external connection electrode having a conductive protrusion,
The method for manufacturing a semiconductor device according to claim 1, wherein:   When embedding the electronic component in the electrical insulating resin, a metal foil perpendicular to the substrate thickness direction is electrically connected by interposing conductive particles between external connection electrodes of the electronic component. A method for manufacturing a semiconductor device according to any one of claims 1 to 3.   When embedding the electronic component in the electrical insulating resin, an anisotropic conductive film is interposed between the external connection electrodes of the electronic component to electrically connect the metal foil perpendicular to the substrate thickness direction. The method for manufacturing a semiconductor device according to claim 1, wherein:   When embedding the electronic component in the electrical insulating resin, an anisotropic conductive paste is interposed between the external connection electrodes of the electronic component to electrically connect the metal foil perpendicular to the substrate thickness direction. The method for manufacturing a semiconductor device according to claim 1, wherein:   When embedding the plurality of electronic components in the electrically insulating resin, electrically connecting the electronic components adjacent in the substrate thickness direction by interposing conductive particles between external connection electrodes of the electronic components. The method for manufacturing a semiconductor device according to claim 1, wherein:   When embedding the plurality of electronic components in the electrical insulating resin, an anisotropic conductive film is interposed between external connection electrodes of the electronic components to electrically connect the electronic components adjacent in the substrate thickness direction. The method for manufacturing a semiconductor device according to claim 1, wherein:   When embedding the plurality of electronic components in the electrical insulating resin, an anisotropic conductive paste is interposed between the external connection electrodes of the electronic components to electrically connect the electronic components adjacent to the substrate thickness direction. The method for manufacturing a semiconductor device according to claim 1, wherein the connection is performed. Preparing an electronic component having an external connection electrode, and an electrical insulation resist in which a metal foil is formed in a predetermined position of the external connection electrode of the electronic component along the thickness direction of the external connection electrode of the electronic component; Placing the electronic component with the external connection electrode forming surface facing down and the external connection electrode forming surface facing the metal night surface at a predetermined position of the electrical insulating resist;
Applying and eliminating heat and pressure ultrasonic waves to the electrical insulation resist until it contacts the metal foil of the electrical insulation resist; and
The electrical connection between the external connection electrode and the metal foil;
A method for manufacturing a semiconductor device, comprising: Placing a bump electrode of an electronic component on an upper surface of an electrically insulating resist or an electrically insulating resin formed on one surface of a substrate having a metal wiring pattern;
Heating the contact portion between the bump electrode and the electrically insulating resist or the electrically insulating resin, and applying pressure and ultrasonic waves in the thickness direction of the electronic component and the substrate;
Removing the portion of the electrically insulating resist or the electrically insulating resin that is in contact with the bump electrode by applying the ultrasonic wave;
Contacting the bump electrode with the metal wiring;
A method for manufacturing a semiconductor device comprising:

Images