JP2005191550A - 基板の貼り付け方法 - Google Patents
基板の貼り付け方法 Download PDFInfo
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- JP2005191550A JP2005191550A JP2004343477A JP2004343477A JP2005191550A JP 2005191550 A JP2005191550 A JP 2005191550A JP 2004343477 A JP2004343477 A JP 2004343477A JP 2004343477 A JP2004343477 A JP 2004343477A JP 2005191550 A JP2005191550 A JP 2005191550A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
【解決手段】 半導体ウェーハWの回路(素子)形成面に接着剤液を塗布し、この接着剤液を予備乾燥させて流動性を低減させ、接着剤層1としての形状維持を可能とする。予備乾燥にはオーブンを用いて例えば80℃で5分間加熱する。接着剤層1の厚みは半導体ウェーハWの表面に形成した回路の凹凸に応じて決定する。この後、所定厚みの接着剤層1が形成された半導体ウェーハWにサポートプレート2を貼り付ける。
【選択図】 図3
Description
一旦、予備乾燥せしめることで接着剤層の膜厚コントロールが容易に行える。また、必要な厚さを得るために、接着剤液の塗布と予備乾燥を複数回繰り返すようにしてもよい。
本発明にあっては先ず、半導体ウェーハWの回路(素子)形成面に接着剤液を塗布する。塗布には例えばスピンナーを用いる。接着剤液としてはアクリル系樹脂またはノボラックタイプのフェノール樹脂系材料とする。
貼り付け機5はボトムプレート51の上方にトッププレート52を配置し、このトッププレート52をモータ53を駆動することで昇降動せしめるようにし、またトッププレート52の下面にはセラミックスの焼結板54を取り付け、この焼結板54に排気管55を接続している。
Claims (8)
- 研削によって半導体ウェーハなどの基板を薄板化する工程に先立って、前記基板の回路形成面をサポートプレートに貼り付ける方法であって、基板の回路形成面に接着剤液を塗布した後、当該接着剤液を予備乾燥せしめて接着剤層としての形状維持を可能とし、次いで、サポートプレートを前記接着剤層に押し付けて一体化し、この押し付けと同時にまたは押し付けが終了した後に、前記接着剤層を乾燥せしめることを特徴とする基板の貼り付け方法。
- 請求項1に記載の基板の貼り付け方法において、前記接着剤液として、ノボラックタイプのフェノール樹脂系材料を用いることを特徴とする基板の貼り付け方法。
- 請求項1に記載の基板の貼り付け方法において、前記サポートプレートとして厚み方向に多数の貫通穴を有するものを用い、また前記予備乾燥では、押圧した際に前記貫通穴から接着剤が滲み出なくなるまで乾燥せしめることを特徴とする基板の貼り付け方法。
- 請求項1に記載の基板の貼り付け方法において、前記接着剤層を厚くするために、接着剤液の塗布と予備乾燥を複数回繰り返すことを特徴とする基板の貼り付け方法。
- 請求項1に記載の基板の貼り付け方法において、前記予備乾燥工程の温度は200℃以下、前記乾燥工程の温度は300℃以下とすることを特徴とする基板の貼り付け方法。
- 請求項1に記載の基板の貼り付け方法において、前記接着剤はアルコールまたはケトンに可溶性であることを特徴とする基板の貼り付け方法。
- 請求項1に記載の基板の貼り付け方法において、前記基板の回路形成面に接着剤液を塗布した後、当該接着剤液を予備乾燥する前に、基板の周縁部に形成された接着剤液のビード部を溶剤によって除去することを特徴とする基板の貼り付け方法。
- 請求項1に記載の基板の貼り付け方法において、前記接着剤液として、アクリル系樹脂材料を用いることを特徴とする基板の貼り付け方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2004343477A JP2005191550A (ja) | 2003-12-01 | 2004-11-29 | 基板の貼り付け方法 |
CNB2004100822799A CN100474550C (zh) | 2003-12-01 | 2004-12-01 | 基板的粘附方法 |
US11/001,575 US7268061B2 (en) | 2003-12-01 | 2004-12-01 | Substrate attaching method |
TW093137046A TW200524679A (en) | 2003-12-01 | 2004-12-01 | Substrate attaching method |
KR1020040099727A KR101043486B1 (ko) | 2003-12-01 | 2004-12-01 | 기판의 첩부방법 |
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JP2004343477A JP2005191550A (ja) | 2003-12-01 | 2004-11-29 | 基板の貼り付け方法 |
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US (1) | US7268061B2 (ja) |
JP (1) | JP2005191550A (ja) |
KR (1) | KR101043486B1 (ja) |
CN (1) | CN100474550C (ja) |
TW (1) | TW200524679A (ja) |
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Also Published As
Publication number | Publication date |
---|---|
CN100474550C (zh) | 2009-04-01 |
US20050170612A1 (en) | 2005-08-04 |
KR20050053020A (ko) | 2005-06-07 |
CN1655337A (zh) | 2005-08-17 |
US7268061B2 (en) | 2007-09-11 |
TW200524679A (en) | 2005-08-01 |
KR101043486B1 (ko) | 2011-06-23 |
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