JP2005005724A - Semiconductor integrated circuit and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which is capable of using a substrate having a low heat resistance, and light and thin, and has a high reliability. <P>SOLUTION: A semiconductor integrated circuit comprising thin film transistors 7 and 8 is manufactured on a substrate for manufacturing and is peeled off from the substrate for manufacturing and is fixed to a final substrate 3. Therefor, the type of the substrate is not limited to the type of the substrate for manufacturing. And, a shape of an edge of an insulating film 11 formed by covering the semiconductor integrated circuit is formed into a taper profile. Thereby, a wiring 4 formed on this insulating film 11 can be constituted to be without any stage, and consequently a manufacturing yield can be improved and a reliability can be raised. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a passive matrix type or active matrix type display device such as a liquid crystal display device, and more particularly to a fashion in which the area occupied by the substrate of the display device is increased by effectively mounting a semiconductor integrated circuit for driving. An object is to obtain a reasonable display device.

  As matrix type display devices, passive matrix type and active matrix type structures are known. In the passive matrix type, a large number of strip-shaped electric wirings (low wirings) made of a transparent conductive film or the like are formed on a first substrate in a certain direction, and the second substrate is formed on the first substrate. The same strip-shaped electrical wiring (column wiring) is formed in a direction substantially perpendicular to the electrical wiring. And a board | substrate is arrange | positioned so that the electrical wiring on both board | substrates may oppose.

  If an electro-optic material whose translucency, light reflection / scattering property is changed by voltage, current, etc., like a liquid crystal material, is provided between the substrates, any row wiring of the first substrate and the second substrate If a voltage, current, or the like is applied to an arbitrary column wiring, the light transmitting property, light reflection / scattering property, etc. of the intersecting portion can be selected. In this way, matrix display is possible.

  In the active matrix type, a row wiring and a column wiring are formed on a first substrate using a multilayer wiring technique, and a pixel electrode is provided at an intersection of the wiring, and a thin film transistor (TFT) or the like is provided on the pixel electrode. An active element is provided to control the potential and current of the pixel electrode. A transparent conductive film is also provided over the second substrate, and the substrate is disposed so that the pixel electrode of the first substrate and the transparent conductive film of the second substrate face each other.

  In any case, the substrate was selected by the process. For example, in the passive matrix type having no particularly complicated process other than forming a transparent conductive film and etching it to form a row / column wiring pattern, the substrate may be plastic instead of glass. On the other hand, in an active matrix type that has a relatively high temperature film formation step and needs to avoid mobile ions such as sodium, it is necessary to use a glass substrate with a very low alkali concentration as the substrate.

  In any case, in the conventional matrix type display device, it is necessary to attach a semiconductor integrated circuit (peripheral drive circuit or bar circuit) for driving the matrix except for a special one. Traditionally, this has been done by tape automated bonding (TAB) or chip-on-glass (COG) methods. However, since the matrix has a large scale of several hundred lines, the number of terminals of the integrated circuit is very large, and the driver circuit is a rectangular IC package or semiconductor chip. Since it is necessary to route the wiring to connect to the electrical wiring on the substrate, the area of the peripheral portion has become larger than the display screen, which cannot be ignored.

  As a method for solving this problem, Japanese Patent Application Laid-Open No. 7-14880 filed by the present applicant discloses that a driver circuit is formed on an elongated substrate (referred to as a stick or a stick crystal) approximately the same as one side of a matrix. A method of connecting this to the terminal portion of the matrix is disclosed. As the driver circuit, a width of about 2 mm is sufficient, and this arrangement is possible. For this reason, most of the substrates could be used as display screens.

  Of course, in this case, since the circuit cannot be formed on the silicon wafer if the matrix area is large, it is necessary to form the circuit on a glass substrate or the like. Therefore, the active element disposed on the pixel electrode is a TFT.

  However, for stick crystals, the thickness of the driver circuit substrate has hindered the miniaturization of the entire display device. For example, it is possible to reduce the thickness of the substrate to 0.3 mm because the display device needs to be thinner by optimizing the type and process of the substrate. However, it is difficult to make the thickness of the stick crystal 0.5 mm or less because of the strength required in the manufacturing process. As a result, when the substrates are bonded together, the stick crystal has a thickness of 0.2 mm or more. Will come out.

  Further, when the types of the stick crystal and the substrate of the display device are different, a circuit may be defective due to a difference in thermal expansion. In particular, when a plastic substrate is used as the substrate of the display device, this problem is remarkable. This is because it is practically impossible to use plastic as the stick crystal substrate from the viewpoint of heat resistance. In addition, since the thickness of the formed semiconductor integrated circuit is thick, the wiring connected to the semiconductor integrated circuit may be disconnected at a large step portion at the end of the semiconductor integrated circuit, or the wiring resistance may be increased. The production yield and reliability of the entire device was reduced. The object of the present invention is to solve such problems of the stick crystal and to further reduce the size and weight of the display device.

  In the present invention, a driver circuit portion is thinned by mechanically bonding only a semiconductor integrated circuit equivalent to a stick crystal on a substrate of a display device and making an electrical connection. In this case, the cross-sectional shape of the semiconductor integrated circuit portion is a taper shape that is the widest at the bonding surface with the display device and becomes narrower as the distance increases. In such a structure, there is no vertical step and it is difficult to cut the electric wiring.

  The basic structure of the present invention is such that a surface of a first substrate having an elongated semiconductor integrated circuit electrically connected to the electrical wiring and having a TFT is formed with a transparent conductive surface on the surface. A display device having a structure in which a transparent conductive film of a second substrate having a film is opposed to each other. Like the stick crystal disclosed in Japanese Patent Laid-Open No. 7-14880, the semiconductor integrated circuit is roughly composed of a display surface of a display device (ie, The matrix is equal to the length of one side of the matrix, and the one fabricated on another substrate is peeled off and mounted on the first substrate.

  In particular, in the case of a passive matrix type, a first electric wiring of a plurality of transparent conductive films extending in the first direction, and a second electrode that is connected to the first electric wiring and has a TFT and is substantially perpendicular to the first direction. A first substrate having an elongated first semiconductor integrated circuit extending in a direction, a second electrical wiring of a plurality of transparent conductive films extending in a second direction, a TFT connected to the first substrate, and having the TFT A display device in which a second substrate having a second semiconductor integrated circuit extending in one direction is arranged so that the first electric wiring and the second electric wiring face each other, and the first and second semiconductors An integrated circuit is a circuit in which a circuit formed on another substrate is peeled off and mounted on each substrate.

  In the case of the active matrix type, a plurality of first electric wirings extending in the first direction and a TFT connected to the first electric wiring and extending in a second direction substantially perpendicular to the first direction are provided. A first semiconductor integrated circuit, a plurality of second electrical wirings extending in the second direction, and a second semiconductor integrated circuit connected to the second electrical wiring and having a TFT and extending in the first direction. A display in which a substrate is disposed on a second substrate having a transparent conductive film on the surface so that the first and second electric wirings of the first substrate and the transparent conductive film of the second substrate face each other. In the apparatus, the first and second semiconductor integrated circuits are formed on another substrate and are mounted on the first substrate.

  A method of forming a semiconductor integrated circuit having a TFT on another substrate, peeling it off and bonding it to another substrate (or removing the original substrate after bonding to the other substrate) is a general method. Is known as one of SOI (Silicon On Insulator) techniques, and Japanese Patent Publication No. Hei 6-504139, other known techniques, or techniques used in the following embodiments may be used.

  An example of a cross section of a passive matrix display device using the present invention is shown in FIG. FIG. 1A is a view at a relatively small magnification. The left side of the figure shows the driver circuit unit 1 provided with the semiconductor integrated circuit, and the right side shows the matrix unit 2. A semiconductor integrated circuit 6 having a tapered cross section is mechanically fixed on the substrate 3 with a resin 5. Further, a pattern of the electrical wiring 4 made of a material such as a transparent isoelectric film is formed, and electrical connection is simultaneously performed.

  FIG. 1B is an enlarged view of the area surrounded by the dotted line in FIG. The reference numerals indicate the same as those in FIG. The semiconductor integrated circuit has a structure in which an N-channel TFT (7) and a P-channel TFT (8) are sandwiched between a base insulating film 9, an interlayer insulator 10, or a passivation film 11 such as silicon oxide. (Fig. 1 (B))

  In addition to the method of patterning the wiring after the semiconductor integrated circuit is fixed to the substrate, as shown in FIG. 3A, the contact portion between the semiconductor integrated circuit and the wiring electrode can be electrically connected in advance such as a transparent conductive film. The semiconductor integrated circuit 34 with the metal wiring 33 may be fixed to the substrate 40 provided with the wiring 31 and further electrically connected. FIG. 3 (B / C) is an enlarged view of the connecting portion. As shown in FIG. 3B, the electrical connection is performed with an anisotropic conductive adhesive 32, or as shown in FIG. 3C, the metal wiring 33 is connected to the bumps 35 disposed on the wiring electrode 31 in advance. This is done by crimping.

  An outline of the manufacturing order of such a display device is shown in FIG. FIG. 2 shows a manufacturing procedure of a passive matrix display device. First, a large number of semiconductor integrated circuits 22 are formed on a suitable substrate 21. (Fig. 2 (A))

  And this is divided and the stick crystals 23 and 24 are obtained. The obtained stick crystal may be selected as a non-defective product or a defective product by testing the electrical characteristics before moving to the next process. (Fig. 2 (B))

  Next, the semiconductor integrated circuits 29 and 30 of the stick crystals 23 and 24 are bonded on the surfaces 26 and 28 on which the wiring patterns of the transparent conductive films of the other substrates 25 and 27 are formed by using the SOI technology. A simple connection. (FIG. 2 (C), FIG. 2 (D))

  Finally, a passive matrix display device is obtained by facing the substrates thus obtained. The surface 26 means a surface opposite to the surface 26, that is, a surface on which no wiring pattern is formed. (Fig. 2 (G))

  In the above case, a low stick crystal (a stick crystal for a driver circuit that drives a row wiring) and a column stick crystal (a stick crystal for a driver circuit that drives a column wiring) from the same substrate 21. Although it cut out, it cannot be overemphasized that it may cut out from another board | substrate. In addition, although an example of a passive matrix display device is shown in FIG. 2, it goes without saying that the same can be applied to an active matrix display device. Further, when a material such as a film is formed as a substrate, it is shown in the examples.

  In the present invention, various variations are possible with respect to the type, thickness, and size of the substrate of the display device. For example, as shown in Embodiment 1, an extremely thin film-like liquid crystal display device can be obtained. In this case, the display device may be attached to a curved surface. Furthermore, as a result of relaxing restrictions on the type of substrate, it is possible to use a light and impact-resistant material such as a plastic substrate, which improves portability.

  In particular, by forming the periphery of the edge of the insulating film covering the semiconductor integrated circuit into a tapered shape, the wiring is not cut off during the formation of the wiring or in the subsequent usage situation. And the reliability of the display device can be increased.

  In addition, since the area occupied by the driver circuit is small, the degree of freedom of arrangement of the display device and other devices increases. Typically, the driver circuit can be pushed into an area of several mm in width around the display surface, so that the display device itself is a very simple and fashionable product. The range of application is also various, and thus the industrial value of the present invention is extremely high.

[Example 1]
This example shows an outline of a manufacturing process of one substrate of a passive matrix liquid crystal display device. This embodiment will be described with reference to FIGS. FIG. 4 shows an outline of a process for forming a driver circuit on a stick crystal, and FIG. 5 shows an outline of a process for mounting the driver circuit on a substrate of a liquid crystal display device.

  First, a 300 nm-thick silicon film 51 was deposited on the glass substrate 50 as a release layer. Since the silicon film 51 is etched when the circuit and substrate formed thereon are separated from each other, the film quality is hardly a problem. Therefore, the silicon film 51 may be deposited by a mass production method. Furthermore, the silicon film may be amorphous or crystalline, and may contain other elements.

  The glass substrate may be made of non-alkali or low alkali glass such as Corning 7059, 1737, NH Techno Glass NA45, 35, Nippon Electric Glass OA2, or quartz glass. In the case of using quartz glass, the cost becomes a problem, but in the present invention, the area used for one liquid crystal display device is extremely small, so the cost per unit is sufficiently small.

  A silicon oxide film 53 having a thickness of 200 nm was deposited on the silicon film 51. Since this silicon oxide film serves as a base film, sufficient care is required for its production. Then, crystalline island-like silicon regions (silicon islands) 54 and 55 were formed by a known method. The thickness of the silicon film greatly affects the required characteristics of the semiconductor circuit, but in general, a thinner one is preferred. In this embodiment, the thickness is 40 to 60 nm.

  In order to obtain crystalline silicon, a method of irradiating strong light such as a laser to amorphous silicon (laser annealing method) or a method of solid phase growth by thermal annealing (solid phase growth method) is used. When using the solid phase growth method, as disclosed in JP-A-6-244104, if a catalytic element such as nickel is added to silicon, the crystallization temperature can be lowered and the annealing time can be shortened. Further, as described in JP-A-6-318701, silicon crystallized once by the solid phase growth method may be laser-annealed. Which method should be adopted may be determined depending on the required characteristics of the semiconductor circuit, the heat-resistant temperature of the substrate, and the like.

  Thereafter, a gate oxide film 56 of silicon oxide having a thickness of 120 nm was deposited by plasma CVD or thermal CVD, and gate electrodes / wirings 57 and 58 were formed by using crystalline silicon having a thickness of 500 nm. The gate wiring may be a metal such as aluminum, tungsten, or titanium, or a silicide thereof. Further, when forming a metal gate electrode, as disclosed in JP-A-5-267667 or 6-338612, the upper surface or side surface thereof may be coated with an anodic oxide. What kind of material the gate electrode is made of may be determined by the required characteristics of the semiconductor circuit, the heat-resistant temperature of the substrate, and the like. (Fig. 4 (A))

  Thereafter, N-type and P-type impurities were introduced into the silicon island by means such as ion doping in a self-aligned manner to form the N-type region 59 and the P-type region 60. Then, an interlayer insulator (silicon oxide film having a thickness of 500 nm) 61 was deposited by a known means. And a contact hole was opened in this, and aluminum alloy wiring 62-64 was formed. (Fig. 4 (B))

  Further, a polyimide film 70 was formed thereon as a passivation film. The polyimide film is formed by applying and curing varnish. In this example, Photo Nice UR-3800 manufactured by Toray Industries, Inc. was used. First, apply with a spinner. The application conditions may be determined according to the desired film thickness. Here, a polyimide film of about 4 μm was formed under the condition of 3000 rpm · 30 seconds. After drying, this is exposed and developed. A desired taper shape can be obtained by selecting appropriate conditions. Then, the film | membrane was hardened by processing at 300 degreeC in nitrogen atmosphere. (Fig. 4 (C))

  Subsequently, the transfer substrate 72 is bonded to the semiconductor integrated circuit with a resin 71. The transfer substrate only needs to have strength and flatness for temporarily holding the integrated circuit, and glass, plastic, or the like can be used. Since the transfer substrate is peeled off later, the resin 71 is preferably made of a material that can be easily removed. Moreover, you may use what peels easily, such as an adhesive. (Fig. 5 (A))

The substrate thus treated was left in a stream of a mixed gas of chlorine trifluoride (ClF ₃ ) and nitrogen. The flow rates of chlorine trifluoride and nitrogen were both 500 sccm. The reaction pressure was 1 to 10 Torr. The temperature was room temperature. A halogenated fluorine such as chlorine trifluoride is known to selectively etch silicon. On the other hand, silicon oxide is hardly etched. Therefore, the peeling layer is etched with time, but the underlying layer 53 is hardly etched and the TFT element is not damaged. When the time further elapses, the underlying layer is completely etched, and the semiconductor integrated circuit is completely peeled off. (Fig. 5 (B))

  Next, the peeled semiconductor integrated circuit is bonded to the substrate 75 of the liquid crystal display device with a resin 76, and the transfer substrate 72 is removed. (Fig. 5 (C))

  In this way, the transfer of the semiconductor integrated circuit onto the substrate of the display device was completed. As the substrate of the liquid crystal display device, PES (polyether sulfone) having a thickness of 0.3 mm was used.

  Finally, an indium tin oxide film (ITO, thickness 100 nm) 80 was formed by sputtering. ITO is a transparent conductive oxide. By patterning this, electrical connection with the electrical wiring and the semiconductor integrated circuit is completed. (Fig. 5 (D))

  In this way, the formation of the semiconductor integrated circuit on one substrate of the liquid crystal display device was completed. A liquid crystal display device is completed using the substrate thus obtained.

[Example 2]
This embodiment shows an outline of a process for forming a semiconductor integrated circuit on a stick crystal. This embodiment will be described with reference to FIG.

  First, a peeling layer 102 made of silicon is formed on a substrate 101, and a driver circuit 100 including a TFT is formed thereon. The detailed manufacturing method is the method described in Example 1.

  Next, a silicon oxide film for passivation is formed. FIG. 6A shows a state in which a separation layer 102 is formed over a substrate 101, a semiconductor integrated circuit 100 made of TFT is formed, and a silicon oxide film 103/104 made of two layers is formed. Has been.

  The silicon oxide film 103/104 is formed by a plasma CVD method. The first silicon oxide film 103 is formed with a relatively high power, and the second silicon oxide film 104 is formed with a relatively low power. The thickness is 100 to 500 nm for the first silicon oxide film and 500 to 1000 nm for the second silicon oxide film.

  Subsequently, as shown in FIG. 6A, a patterning resist 105 is formed, and this is applied to a 1/10 hydrofluoric acid solution to etch the silicon oxide film. At this time, the etching rate of the first silicon oxide film 103 formed at a relatively high power is slower than that of the second silicon oxide film formed at a low power. As a result, the second silicon oxide film is largely undercut. Will be. (Fig. 6 (B))

  Finally, the resist is removed to complete a semiconductor integrated circuit having a tapered cross section.

  In this embodiment, a two-layer passivation silicon oxide film is used, but three or more layers may be used. Alternatively, a film having a higher etching rate toward the upper part by continuously changing the film forming conditions may be used. good. Furthermore, it is possible to use a material such as silicon nitride having a similar effect, or a combination thereof.

  In the present embodiment, the periphery of the end portion of the insulating film 70 covering the semiconductor integrated circuit 100 is tapered, and the formed wiring can be prevented from being disconnected. Further, the production yield can be high and the reliability can be high.

1 shows a cross-sectional structure of the present invention. An outline of a method for manufacturing a display device of the present invention will be described. 1 illustrates a cross-sectional structure of a display device according to an example of the present invention. An example of a manufacturing process of a semiconductor integrated circuit used in the present invention will be described. A process of bonding a semiconductor integrated circuit to a substrate of a display device is shown. An example of a manufacturing process of a semiconductor integrated circuit used in the present invention will be described.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Driver circuit part of liquid crystal display device 2 ... Matrix part of liquid crystal display device 3 ... Substrate of liquid crystal display device 4 ... Wiring electrode 5 ... Resin 6 ... Semiconductor integrated circuit 7 .. N-channel TFT
8 ... P-channel TFT
DESCRIPTION OF SYMBOLS 9 ... Base film 10 ... Interlayer insulating film 11 ... Passivation film 21 ... Substrate on which a stick crystal is formed 22 ... Semiconductor integrated circuit 23, 24 Stick crystal 25, 27 of a liquid crystal display device Substrate 26, 28 Surface on which wiring pattern is formed 29, 30 Driver circuit transferred onto substrate of liquid crystal display device 26 ... Surface opposite to surface on which wiring pattern is formed 31 ... Liquid crystal display device Electrode 32 ... Resin 33 ... Wiring electrode 34 ... Semiconductor integrated circuit 35 ... Bump 40 ... Substrate for liquid crystal display device 50 ... Substrate for manufacturing semiconductor integrated circuit 51 ... Peeling Layer 53 ... Underlayer film 54/55 Silicon island 56 ... Interlayer insulating film 57/58 Gate electrode 59 ... N-type region 60 ... P-type Area 61 ... Gate insulating film 62-64 Aluminum alloy electrode 70 ... Passivation film 71 ... Adhesive 72 ... Transfer substrate 75 ... Liquid crystal display device substrate 76 ... Resin 80 ... Wiring electrode 100 ... Driver circuit unit 101 ... Substrate 102 for manufacturing a semiconductor integrated circuit ... Peeling layer 103 ... First silicon oxide film 104 ... Second silicon oxide film 105 ...・ Resist

Claims (23)

A first wiring formed on the substrate;
A circuit board electrically peeled from the first wiring and fixed to the substrate by peeling off the one manufactured on the manufacturing substrate;
The circuit includes a second wiring electrically connected to the first wiring, and a thin film transistor,
The main part of the circuit is covered with a tapered insulating film around the end,
A semiconductor integrated circuit, wherein the second wiring is formed on the insulating film. A first wiring formed on the substrate;
A circuit board electrically peeled from the first wiring and fixed to the substrate by peeling off the one manufactured on the manufacturing substrate;
The circuit includes a second wiring electrically connected to the first wiring, and a thin film transistor,
The main part of the circuit is covered with a tapered insulating film around the end,
The second wiring is formed on the insulating film,
2. The semiconductor integrated circuit according to claim 1, wherein the second wiring is in direct contact with the first wiring and thereby electrically connected to the first wiring. A first wiring formed on the substrate;
A circuit board electrically peeled from the first wiring and fixed to the substrate by peeling off the one manufactured on the manufacturing substrate;
The circuit includes a second wiring electrically connected to the first wiring, and a thin film transistor,
The main part of the circuit is covered with a tapered insulating film around the end,
The second wiring is formed on the insulating film,
The semiconductor integrated circuit, wherein the second wiring is electrically connected to the first wiring by an anisotropic conductive adhesive. A first wiring formed on the substrate;
A circuit board electrically peeled from the first wiring and fixed to the substrate by peeling off the one manufactured on the manufacturing substrate;
The circuit includes a second wiring electrically connected to the first wiring, and a thin film transistor,
The main part of the circuit is covered with a tapered insulating film around the end,
The second wiring is formed on the insulating film,
The semiconductor integrated circuit, wherein the second wiring is electrically connected to the first wiring by a bump.   5. The semiconductor integrated circuit according to claim 1, wherein the insulating film is a polyimide film.   6. The semiconductor integrated circuit according to claim 1, wherein the insulating film is a silicon oxide film.   8. The semiconductor integrated circuit according to claim 1, wherein the thin film transistor uses a crystalline silicon film in an island region.   8. The semiconductor integrated circuit according to claim 1, wherein the circuit is fixed to the substrate with an adhesive.   9. The semiconductor integrated circuit according to claim 1, wherein the substrate is a film substrate.   9. The semiconductor integrated circuit according to claim 1, wherein the substrate is a plastic substrate. A circuit using thin film transistors is formed on a manufacturing substrate,
Forming an insulating film covering the circuit;
Processing the insulating film so that the periphery of the end of the main part of the circuit is tapered,
The manufacturing substrate is peeled from the circuit and fixed to the substrate on which the first wiring is formed,
A method of manufacturing a semiconductor integrated circuit, wherein a second wiring for electrically connecting the circuit and the first wiring is formed on the insulating film. A release layer is formed on the production substrate,
A circuit using a thin film transistor is formed on the release layer,
Forming an insulating film covering the circuit;
Processing the insulating film so that the periphery of the end of the main part of the circuit is tapered,
A temporary support substrate is fixed above the circuit;
Removing the release layer to separate the manufacturing substrate from the circuit;
Fixing the circuit to the substrate on which the first wiring is formed;
Manufacturing the semiconductor integrated circuit, wherein the temporary support substrate is separated from the circuit, and a second wiring is formed on the insulating film to electrically connect the circuit and the first wiring. Method. Form a release layer made of silicon on the substrate for production,
A circuit using a thin film transistor is formed on the release layer,
Forming an insulating film covering the circuit;
Processing the insulating film so that the periphery of the end of the main part of the circuit is tapered,
A temporary support substrate is fixed above the circuit;
Etching the release layer with fluorine halide to separate the manufacturing substrate from the circuit;
Fixing the circuit to the substrate on which the first wiring is formed;
Manufacturing the semiconductor integrated circuit, wherein the temporary support substrate is separated from the circuit, and a second wiring is formed on the insulating film to electrically connect the circuit and the first wiring. Method. A circuit using thin film transistors is formed on a manufacturing substrate,
Forming an insulating film covering the circuit;
Processing the insulating film so that the periphery of the end of the main part of the circuit is tapered,
Forming a first wiring connected to the circuit on the insulating film;
Peeling the production substrate from the circuit,
A method of manufacturing a semiconductor integrated circuit for fixing the circuit to a substrate,
A second wiring is formed on the substrate, and the circuit is fixed to the substrate so that the first wiring and the second wiring are electrically connected to each other. A method of manufacturing an integrated circuit. A release layer is formed on the production substrate,
A circuit using a thin film transistor is formed on the release layer,
Forming an insulating film covering the circuit;
Processing the insulating film so that the periphery of the end of the main part of the circuit is tapered,
Forming a first wiring connected to the circuit on the insulating film;
A temporary support substrate is fixed above the circuit;
Removing the release layer to release the manufacturing substrate from the circuit;
Fixing the circuit to the substrate;
A method of manufacturing a semiconductor integrated circuit for separating the temporary support substrate from the circuit,
A second wiring is formed on the substrate, and the circuit is fixed to the substrate so that the first wiring and the second wiring are electrically connected to each other. A method of manufacturing an integrated circuit. Form a release layer made of silicon on the substrate for production,
A circuit using a thin film transistor is formed on the release layer,
Forming an insulating film covering the circuit;
Processing the insulating film so that the periphery of the end of the main part of the circuit is tapered,
Forming a first wiring connected to the circuit on the insulating film;
A temporary support substrate is fixed above the circuit;
Etching the release layer with fluorine halide to separate the manufacturing substrate from the circuit;
Fixing the circuit to the substrate;
A method of manufacturing a semiconductor integrated circuit for separating the temporary support substrate from the circuit,
A second wiring is formed on the substrate, and the circuit is fixed to the substrate so that the first wiring and the second wiring are electrically connected to each other. A method of manufacturing an integrated circuit. 16. The method for manufacturing a semiconductor integrated circuit according to claim 12, wherein the fluorine halide is ClF ₃ .   17. The method of manufacturing a semiconductor integrated circuit according to claim 11, wherein the insulating film is a polyimide film.   17. The method for manufacturing a semiconductor integrated circuit according to claim 11, wherein the insulating film is a silicon oxide film.   19. The method of manufacturing a semiconductor integrated circuit according to claim 11, wherein the thin film transistor uses a crystalline silicon film in an island region.   20. The method for manufacturing a semiconductor integrated circuit according to claim 11, wherein the circuit is fixed to the substrate with an adhesive.   21. The method for manufacturing a semiconductor integrated circuit according to claim 11, wherein the substrate is a film-like substrate.   21. The method for manufacturing a semiconductor integrated circuit according to claim 11, wherein the substrate is a plastic substrate.

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