JP2004296107A - Image display device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an image display device that is improved in reliability and display quality by making the orbit of electron beams easily controllable and by suppressing a discharging toward an electron emitting source side, and to provide a manufacturing method thereof. <P>SOLUTION: The image display device has the first substrate 10 with a fluorescent screen, and the second substrate disposed face to face with the first substrate with a gap, on which a plurality of electron emitting sources 18 for exciting the fluorescent screen are arranged. A plurality of spacers 30a and 30b that support a structure of the picture display device against atmospheric pressure acting on the substrates are disposed between the first and the second substrates. At least some spacers are formed of an insulating material having relative dielectric constant of 3 or less. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an image display device including a substrate disposed to face and a plurality of spacers disposed between the substrates, and a method for manufacturing the same.
[0002]
[Prior art]
2. Description of the Related Art In recent years, there has been a demand for a high-definition image display device for high-definition broadcasting or a high-resolution image display device associated therewith. In order to achieve these demands, it is necessary to flatten the screen surface and increase the resolution, and at the same time, reduce the weight and thickness.
[0003]
As an image display device that satisfies the above demands, for example, a flat display device such as a field emission display (hereinafter, referred to as FED) has attracted attention. This FED has a first substrate and a second substrate which are opposed to each other with a predetermined gap therebetween, and these substrates are joined to each other at their peripheral edges directly or via a rectangular frame-shaped side wall, and are connected to a vacuum chamber. Constructs an enclosure. A phosphor layer is formed on the inner surface of the first substrate, and a plurality of electron-emitting devices are provided on the inner surface of the second substrate as electron emission sources that excite the phosphor layer to emit light.
[0004]
Further, in order to support an atmospheric pressure load applied to the first substrate and the second substrate, a plurality of spacers are provided between the substrates as a support member. In the FED, when displaying an image, an anode voltage is applied to the phosphor layer, and the electron beam emitted from the electron-emitting device is accelerated by the anode voltage to collide with the phosphor layer, whereby the phosphor is formed. It emits light and displays an image.
[0005]
In the FED having such a configuration, the size of the electron-emitting device is on the order of micrometers, and the distance between the first substrate and the second substrate can be set on the order of millimeters. Therefore, it is possible to achieve higher resolution, lighter weight, and thinner image display device as compared with a cathode ray tube (CRT) currently used as a display of a television or a computer.
[0006]
In the image display device as described above, in order to obtain practical display characteristics, it is necessary to use a phosphor similar to a normal cathode ray tube and set the anode voltage to several kV or more, preferably 10 kV or more. . The gap between the first substrate and the second substrate cannot be made so large from the viewpoint of resolution, characteristics of the support member, manufacturability, and the like, and needs to be set to about 1 to 2 mm. Further, when electrons having a high accelerating voltage collide with the phosphor screen, secondary electrons and reflected electrons are generated on the phosphor screen.
[0007]
When the space between the first substrate and the second substrate is narrow, secondary electrons and reflected electrons generated on the phosphor screen collide with the spacers provided between the substrates, and as a result, the spacers are charged. At the accelerating voltage in the FED, the spacer is generally positively charged. In this case, the electron beam emitted from the electron-emitting device is attracted to the spacer and deviates from the original orbit. As a result, there is a problem that mislanding of the electron beam occurs with respect to the phosphor layer, and the color purity of the displayed image is degraded.
[0008]
In order to reduce the attraction of the electron beam by the spacer, it is conceivable to release the charge by performing a conductive treatment on all or a part of the surface of the spacer. For example, Patent Literature 1 discloses a structure in which an end portion of an insulating spacer on a second substrate side is subjected to a conductive process to release the charge of the spacer.
[0009]
[Patent Document 1]
US Pat. No. 5,726,529
[Problems to be solved by the invention]
However, when the end of the insulating spacer on the side of the second substrate is subjected to a conductive treatment, the charged spacer is discharged to the second substrate, and the electron-emitting device provided on the second substrate is damaged or deteriorated. Display quality may be degraded. Also, the reactive current flowing from the first substrate to the second substrate via the spacer increases, causing an increase in temperature and an increase in power consumption.
[0011]
The present invention has been made in view of the above points, and an object of the present invention is to provide an image display device that can easily control the trajectory of an electron beam and suppresses discharge to the electron emission source side, and has improved reliability and display quality. And a method of manufacturing the same.
[0012]
[Means for Solving the Problems]
In order to achieve the above object, an image display device according to an aspect of the present invention is arranged such that a first substrate having a phosphor screen is opposed to the first substrate with a gap therebetween, and emits electrons to form the first substrate. A second substrate provided with a plurality of electron emission sources for exciting the phosphor screen, and a second substrate provided between the first substrate and the second substrate, at least a portion of which is made of an insulating material having a relative dielectric constant of 3 or less. And a plurality of spacers formed to support the atmospheric pressure acting on the first and second substrates.
[0013]
According to another aspect of the present invention, there is provided a method of manufacturing an image display device, comprising: a first substrate having a phosphor screen; a first substrate having a gap between the first substrate and a first substrate; A second substrate provided with a plurality of electron emission sources for exciting a surface; and a second substrate provided between the first substrate and the second substrate, at least a portion formed of an insulating material having a relative dielectric constant of 3 or less. And a plurality of spacers for supporting the atmospheric pressure acting on the first and second substrates, the method comprising:
A molding die having a plurality of openings for molding a spacer is prepared, and a spacer forming material and an insulating material having a relative dielectric constant of 3 or less are filled and filled in each opening of the molding die. The spacer is formed by solidifying a forming material and an insulating material.
[0014]
According to the image display device and the method of manufacturing the image display device configured as described above, at least a part of the spacer is formed of an insulating material having a relative permittivity of 3 or less, thereby suppressing the charging of the spacer and causing the orbital deviation of the electron beam. Can be reduced. At the same time, the discharge to the first and second substrates can be suppressed, and the withstand voltage characteristics of the image display device can be improved.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment in which the present invention is applied to a surface conduction electron-emitting device (hereinafter, referred to as an SED), which is a type of FED, as a flat image display device will be described in detail with reference to the drawings.
As shown in FIGS. 1 to 3, the SED includes a first substrate 10 and a second substrate 12 each formed of a rectangular glass plate as a transparent insulating substrate. They are arranged facing each other with a gap of 0 mm. The second substrate 12 is formed to have a slightly larger dimension than the first substrate 10. Then, the first substrate 10 and the second substrate 12 are joined to each other via a rectangular frame-shaped side wall 14 made of glass, and a flat rectangular vacuum envelope 15 whose inside is maintained at a high vacuum. Is composed.
[0016]
On the inner surface of the first substrate 10, a phosphor screen 16 is formed as a phosphor screen. The phosphor screen 16 is configured by arranging phosphor layers R, G, B that emit red, blue, and green light by collision of electrons, and the light-shielding layer 11. These phosphor layers R, G, and B are formed in stripes or dots. On the phosphor screen 16, a metal back 17 made of aluminum or the like and a getter film (not shown) are sequentially formed. Note that a transparent conductive film or a color filter film made of, for example, ITO may be provided between the first substrate 10 and the phosphor screen 16.
[0017]
On the inner surface of the second substrate 12, a large number of surface conduction electron-emitting devices 18 each emitting an electron beam are provided as electron emission sources for exciting the phosphor layer of the phosphor screen 16. These electron-emitting devices 18 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. Each of the electron-emitting devices 18 includes an electron-emitting portion (not shown), a pair of device electrodes for applying a voltage to the electron-emitting portion, and the like. In addition, on the inner surface of the second substrate 12, a number of wirings 21 for supplying a potential to the electron-emitting devices 18 are provided in a matrix, and the ends of the wirings 21 are led out to the peripheral portion of the vacuum envelope 15.
[0018]
The side wall 14 functioning as a bonding member is sealed to the peripheral portion of the first substrate 10 and the peripheral portion of the second substrate 12 by a sealing material 20 such as low-melting glass, low-melting metal, or the like. The second substrates are joined together.
[0019]
As shown in FIGS. 2 to 4, the SED includes a spacer assembly 22 disposed between the first substrate 10 and the second substrate 12. In the present embodiment, the spacer assembly 22 includes a plate-shaped grid 24 and a plurality of columnar spacers integrally provided on both sides of the grid.
[0020]
More specifically, the grid 24 has a first surface 24a facing the inner surface of the first substrate 10 and a second surface 24b facing the inner surface of the second substrate 12, and is arranged in parallel with these substrates. A large number of electron beam passage holes 26 and a plurality of spacer openings 28 are formed in the grid 24 by etching or the like. The electron beam passage holes 26 are arranged to face the electron-emitting devices 18, respectively, and transmit the electron beams emitted from the electron-emitting devices. The spacer openings 28 are located between the electron beam passage holes 26 and are arranged at a predetermined pitch.
[0021]
The grid 24 is formed of, for example, an iron-nickel-based metal plate to a thickness of 0.1 to 0.25 mm. On the surface of the grid 24, an oxide film made of an element constituting the metal plate, for example, an oxide film made of Fe ₃ O ₄ or NiFe ₂ O ₄ is formed. Further, a high-resistance film formed by applying and firing a high-resistance material made of glass, ceramic, or the like is formed on at least the surface of the grid 24 on the second substrate side, and the resistance of the high-resistance film is set to E + 8 Ω / □ or more. ing.
[0022]
The electron beam passage hole 26 is formed in a rectangular shape of, for example, 0.15 to 0.25 mm × 0.15 to 0.25 mm, and the spacer opening 28 is, for example, a circular shape having a diameter of about 0.2 to 0.5 mm. Is formed. The high-resistance film having the discharge current limiting effect described above is also formed on the wall surface of the electron beam passage hole 26 provided in the grid 24.
[0023]
A plurality of first spacers 30a are erected integrally on the first surface 24a of the grid 24, and the extending ends of the first spacers 30a are interposed via the getter film, the metal back 17, and the light shielding layer 11 of the phosphor screen 16. It is in contact with one substrate 10. A plurality of second spacers 30 b are integrally provided on the second surface 24 b of the grid 24, and the extending ends thereof are in contact with the wirings 21 provided on the inner surface of the second substrate 12. The first and second spacers 30a and 30b are provided between two adjacent electron beam passage holes 26 and extend in alignment with each other. Thus, the first and second spacers 30a, 30b are formed integrally with the grid 24 with the grid 24 sandwiched from both sides.
[0024]
Each of the first and second spacers 30a and 30b is formed in a tapered shape having a smaller diameter from the grid 24 side toward the extending end. For example, each of the first spacers 30a is formed to have a diameter of about 0.4 mm at a base end located on the grid 24 side, a diameter of about 0.3 mm at an extended end, and a height of about 0.6 mm. Each of the second spacers 30b is formed such that the base end located on the grid 24 side has a diameter of about 0.4 mm, the extension end has a diameter of about 0.25 mm, and the height is about 0.8 mm. Thus, the height of the first spacer 30a is formed lower than the height of the second spacer 30b.
[0025]
Each of the first and second spacers 30a and 30b is mainly formed of a spacer forming material mainly composed of glass. The distal end of the second spacer 30b located on the second substrate 12 side is formed of an insulating material having a relative dielectric constant of 3 or less, and forms a low dielectric constant portion 32. The material properties required for the spacer include a strength capable of maintaining a shape under vacuum, and a stability that does not cause decomposition or a chemical reaction when the temperature is raised in a manufacturing process. For example, an organic resin material or a polymer material can be used as the insulating material having a relative dielectric constant of 3 or less satisfying such a demand. The height h of the low dielectric constant portion 32 from the second substrate 12 side is formed to be 10% or more of the height H of the entire first and second spacers 30a and 30b, and is set here to 200 μm.
[0026]
The spacer assembly 22 configured as described above is disposed between the first substrate 10 and the second substrate 12. The first and second spacers 30a and 30b contact the inner surfaces of the first substrate 10 and the second substrate 12 to support the atmospheric load acting on these substrates, and to set the distance between the substrates to a predetermined value. Has been maintained.
[0027]
The SED includes a voltage supply unit (not shown) that applies a voltage to the grid 24 and the metal back 17 of the first substrate 10. The voltage supply unit is connected to the grid 24 and the metal back 17, respectively, and applies, for example, a voltage of about 12 kV to the grid 24 and about 10 kV to the metal back 17. That is, the voltage applied to the grid 24 is set equal to or higher than the voltage applied to the first substrate 10.
[0028]
In this SED, when displaying an image, an anode voltage is applied to the phosphor screen 16 and the metal back 17, and the electron beam emitted from the electron-emitting device 18 is accelerated by the anode voltage to collide with the phosphor screen 16. Thereby, the phosphor layer of the phosphor screen 16 is excited to emit light, and an image is displayed.
[0029]
Next, a method of manufacturing the SED configured as described above will be described. When manufacturing the spacer assembly 22, first, a grid 24 having a predetermined size and first and second molds 36a and 36b each having a rectangular plate shape having substantially the same size as the grid are prepared. In this case, after a thin plate made of Fe-45 to 55% Ni and having a thickness of 0.12 mm is degreased, washed, and dried, the electron beam passage holes 26 and the spacer openings 28 are formed by etching to form the grid 24. Thereafter, the entire grid 24 is oxidized by an oxidation process, and an insulating film is formed on the grid surface including the inner surfaces of the electron beam passage holes 26 and the spacer openings 28. Further, a solution in which fine particles of tin oxide and antimony oxide are dispersed is spray-coated on the insulating film, dried and fired to form a high-resistance film.
[0030]
As shown in FIG. 5, the first and second molds 36a and 36b functioning as molds have through-holes 38a and 38b as openings for forming spacers, and these through-holes correspond to the spacers of the grid 24, respectively. It is arranged and formed corresponding to the opening 28. In the first mold 36a and the second mold 36b, at least the inner surfaces of the through holes 38a and 38b are coated with a resin that is thermally decomposed by heat treatment.
[0031]
Then, the first mold 36a is brought into close contact with the first surface 24a of the grid in a state where the respective through holes 38a are positioned so as to be aligned with the spacer openings 28 of the grid 24. Similarly, the second mold 36b is brought into close contact with the second surface 24b of the grid with the through holes 38b positioned so as to be aligned with the spacer openings 28 of the grid 24. Then, the first mold 36a, the grid 24, and the second mold 36b are fixed to each other using a clamper (not shown).
[0032]
Next, for example, a paste-like spacer forming material 40 is supplied from the outer surface side of the first mold 36a, and the through holes 38a of the first mold, the spacer openings 28 of the grid 24, and the second mold 36b are formed. The hole 38b is filled with a spacer forming material 40. At this time, a space is left at the end of the through hole 38b without filling with the spacer forming material 40. As the spacer forming material 40, an insulating glass paste containing a UV-curable binder (organic component) and a glass filler is used. Subsequently, as shown in FIG. 6, a paste-like organic resin 41 having a relative dielectric constant of 2.5 is supplied as a spacer-forming material from the outer surface side of the second mold 36b, and the through-hole is overlapped with the spacer-forming material 40. Inject into the end of 38b.
[0033]
Thereafter, the filled spacer forming material 40 and the organic resin 41 are irradiated with ultraviolet rays (UV) as radiation from the outer surfaces of the first and second molds 36a and 36b, and the spacer forming material and the organic resin are irradiated with UV. Let it cure. Thereafter, heat curing may be performed as necessary. Next, the resin applied to the through holes 38a, 38b of the first and second molds 36a, 36b is thermally decomposed by heat treatment, and as shown in FIG. Make a gap between the hole. After that, the first and second molds 36a and 36b are released from the grid 24.
[0034]
Subsequently, the grid 24 on which the first and second spacers 30a and 30b are formed by the spacer forming material 40 and the organic resin 41 is heat-treated in a heating furnace, and after the binder is blown out of the spacer forming material, about 500 to The spacer-forming material and the organic resin are baked and solidified at 550 ° C. for 30 minutes to 1 hour. As a result, as shown in FIG. 8, a spacer assembly 22 in which the first and second spacers 30a and 30b are formed on the grid 24 is obtained. A low dielectric constant portion 32 made of an organic resin is integrally formed at the tip of the second spacer 30b.
[0035]
On the other hand, the first substrate 10 provided with the phosphor screen 16 and the metal back 17 and the second substrate 12 provided with the electron-emitting devices 18 and the wirings 21 and joined to the side wall 14 are prepared in advance. Keep it.
[0036]
Subsequently, the spacer assembly 22 configured as described above is positioned and arranged on the second substrate 12. At this time, the spacer assembly 22 is positioned so that the extending ends of the second spacers 30b are respectively arranged on the wirings 21. In this state, the first substrate 10, the second substrate 12, and the spacer assembly 22 are arranged in a vacuum chamber, and after evacuating the vacuum chamber, the first substrate is joined to the second substrate via the side wall 14. . Thus, an SED including the spacer assembly 22 is manufactured.
[0037]
According to the SED configured as described above, the distal end of the second spacer 30b located on the second substrate 12 side is formed by the low dielectric constant portion 32 having a relative dielectric constant of 3 or less. Therefore, even when the anode voltage is applied to the phosphor screen 16, the low dielectric constant portion 32 has a low occurrence of a dielectric action, and at the same time, has a low rate of causing polarization by generated electrons. Therefore, the low-dielectric-constant portion 32 has a very small attractive force of the electron beam as compared with the spacer mainly made of glass, and the influence on the trajectory of the electron beam is greatly reduced. In particular, the electron beam emitted from the electron-emitting device 18 has the slowest moving speed immediately after the emission and is easily affected by the attraction of the spacer, but the tip of the second spacer 30b located near the electron-emitting device 18 Is set as the low dielectric constant portion 32, the movement of the electron beam to the spacer side can be suppressed. As a result, the orbital deviation of the electron beam emitted from the electron-emitting device 18 is suppressed, and reaches the target phosphor layer of the phosphor screen 16. As a result, mislanding of the electron beam can be prevented, deterioration of color purity can be reduced, and image quality can be improved.
[0038]
An SED according to the present embodiment and an SED provided with a spacer having no low dielectric constant portion 32 were prepared, and the movement amount of the electron beam was compared. As a result, in the SED in which the low dielectric constant portion 32 is not provided, the electron beam is attracted to the spacer side by about 200 to 300 μm, whereas in the SED according to the present embodiment, the moving amount of the electron beam is ２. This was reduced to 表示, and the color purity of the displayed image was also improved.
[0039]
In addition, by forming the distal end of the second spacer 30a with the low dielectric constant portion 32, the discharge withstand voltage between the first substrate 10 and the second substrate 12 can be secured. This makes it possible to increase the anode voltage applied to the phosphor screen and improve the brightness of the displayed image. Furthermore, it is possible to eliminate a reactive current flowing from the first substrate 10 to the second substrate 12 via the spacer, and it is possible to prevent a rise in temperature and power consumption in the spacer.
[0040]
Further, according to the SED, the grid 24 is disposed between the first substrate 10 and the second substrate 12, and the height of the first spacer 30a is formed lower than the height of the second spacer 30b. ing. Thereby, the grid 24 is located closer to the first substrate 10 side than the second substrate 12. Therefore, even when a discharge occurs from the first substrate 10 side, the grid 24 can suppress the discharge damage of the electron-emitting devices 18 provided on the second substrate 12. Therefore, it is possible to obtain an SED having excellent withstand voltage against discharge and improved image quality.
[0041]
Further, according to the SED having the above configuration, the height of the first spacer 30a is formed lower than that of the second spacer 30b, so that the voltage applied to the grid 24 is higher than the voltage applied to the first substrate 10. In addition, the electrons generated from the electron-emitting devices 18 can reliably reach the phosphor screen side.
[0042]
In the embodiment described above, the distal end of the second spacer 30b located on the second substrate 12 side is constituted by the low dielectric constant portion 32, but only the distal end of the first spacer 30a or as shown in FIG. Alternatively, the distal end of the first spacer 30a and the distal end of the second spacer 30b may each be constituted by a low dielectric constant portion 32 formed of an insulating material having a relative dielectric constant of 3 or less.
Further, as shown in FIG. 10, the entire first spacer 30a and second spacer 30b may be formed of an insulating material having a relative dielectric constant of 3 or less.
[0043]
Furthermore, in the above-described embodiment, at least a part of the spacer is formed of a material having a relative dielectric constant of 3 or less. However, as shown in FIG. 11, a part of the spacer, for example, the tip of the second spacer 30b The low dielectric constant portion 32 is formed by coating the low dielectric constant portion 32 by covering the portion with an insulating material having a relative dielectric constant of 3 or less, or as shown in FIG. It may be configured to adhere to the tip of the 2 spacer 30b. In this case, similarly to the above-described embodiment, the through holes of the first and second molds are filled with a spacer forming material, and solidified to form the first and second spacers. It is manufactured by applying or bonding an insulating material having a relative dielectric constant of 3 or less.
In the embodiment shown in FIGS. 9 to 12, the other configuration is the same as that of the above-described first embodiment, and the same portions are denoted by the same reference numerals and detailed description thereof will be omitted. . The same effects as those of the first embodiment can be obtained in the embodiment shown in FIGS. 9 to 12.
[0044]
Further, in the above-described embodiment, the grid 24 has the spacer opening 28, and the first and second spacers 30a and 30b are formed so as to overlap the spacer opening. However, as shown in FIG. The spacers 30a and 30b may be provided directly on the first and second surfaces of the grid 24 without providing the spacer openings. Other configurations are the same as those of the above-described embodiment, and a detailed description thereof will be omitted. Further, the spacer assembly 22 may be configured to include a grid and a first spacer, and the second spacer may be formed on the second substrate 12. In any case, the spacer assembly can be manufactured using the same manufacturing method as in the above-described embodiment, and the same operation and effect as in the above-described embodiment can be obtained. In the above-described embodiment, the configuration is such that the spacer is formed on the grid. However, a configuration without the grid may be employed.
[0045]
Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying constituent elements in an implementation stage without departing from the scope of the invention. Various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above embodiments. For example, some components may be deleted from all the components shown in the embodiments. Further, components of different embodiments may be appropriately combined. In the present invention, the diameter and height of the spacer, the dimensions and materials of other components, and the like can be appropriately selected as needed. The electron emission source is not limited to the surface conduction type electron emission element, and various types such as a field emission type and a carbon nanotube can be selected. Further, the present invention is not limited to the SED and can be applied to other image display devices. Is also applicable.
[0046]
【The invention's effect】
As described in detail above, according to the present invention, an image display device that can easily control the trajectory of an electron beam, suppresses discharge to the electron emission source side, and has improved reliability and display quality, and a method of manufacturing the same Can be provided.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an SED according to a first embodiment of the present invention.
FIG. 2 is a perspective view of the SED taken along a line AA in FIG. 1;
FIG. 3 is a sectional view showing the SED.
FIG. 4 is an enlarged sectional view showing a part of the SED.
FIG. 5 is a cross-sectional view showing a state in which first and second dies are mounted on a grid and the dies are filled with a spacer forming material in a manufacturing process of the spacer used for the SED.
FIG. 6 is a cross-sectional view showing a state in which a mold is filled with an organic resin in the method of manufacturing a spacer.
FIG. 7 is a cross-sectional view showing a state in which the mold is filled with a spacer forming material and an organic resin and then subjected to UV irradiation in the manufacturing process.
FIG. 8 is a cross-sectional view showing a state where the mold is released in the manufacturing process.
FIG. 9 is a sectional view showing a spacer assembly of an SED according to a second embodiment of the present invention.
FIG. 10 is a sectional view showing a spacer assembly of an SED according to a third embodiment of the present invention.
FIG. 11 is a sectional view showing a spacer assembly of an SED according to a fourth embodiment of the present invention.
FIG. 12 is a sectional view showing a spacer assembly of an SED according to a fifth embodiment of the present invention.
FIG. 13 is a sectional view showing an SED according to a sixth embodiment of the present invention.
[Explanation of symbols]
10: first substrate, 12: second substrate, 14: side wall,
15: vacuum envelope, 16: phosphor screen, 18: electron-emitting device,
22: spacer assembly, 24: grid,
26: electron beam passage hole, 30a: first spacer,
30b: second spacer, 40: spacer forming material,
41 ... Low dielectric constant part

Claims (9)

A first substrate having a phosphor screen,
A second substrate provided with a plurality of electron emission sources that are opposed to the first substrate with a gap therebetween and emit electrons to excite the phosphor screen;
A plurality of substrates provided between the first substrate and the second substrate, at least partially formed of an insulating material having a relative permittivity of 3 or less, and supporting an atmospheric pressure acting on the first and second substrates. An image display device comprising: a spacer. A first substrate having a phosphor screen,
A second substrate provided with a plurality of electron emission sources that are opposed to the first substrate with a gap therebetween and emit electrons to excite the phosphor screen;
A plate-shaped grid having a plurality of electron beam passage holes respectively corresponding to the electron emission sources, and provided between the first and second substrates facing the first and second substrates;
An image display device comprising: a plurality of spacers provided on the grid, at least partially formed of an insulating material having a relative dielectric constant of 3 or less, and supporting an atmospheric load acting on the first and second substrates. . The spacer has an end in contact with the first substrate and an end in contact with the second substrate, and at least one end is formed of an insulating material having a relative permittivity of 3 or less. The image display device according to claim 1 or 2, wherein: The spacer has an end in contact with the first substrate and an end in contact with the second substrate, and at least one end is coated with an insulating material having a relative dielectric constant of 3 or less. The image display device according to claim 1 or 2, wherein: 3. The image display device according to claim 1, wherein each of the spacers is formed of an insulating material having a relative dielectric constant of 3 or less from a height of 10% or more of a height of the spacer from the second substrate. 4. 3. The image display device according to claim 1, wherein each of the spacers is covered with an insulating material having a relative dielectric constant of 3 or less from a height of 10% or more of the height of the spacer from the second substrate. 4. The grid has a first surface facing the first substrate and a second surface facing the second substrate, and the spacer is erected on the first surface and the first A plurality of first spacers contacting the substrate, and a plurality of second spacers standing on the second surface and contacting the second substrate. Item 3. The image display device according to Item 2. A first substrate having a phosphor screen, and a second substrate provided with a plurality of electron emission sources that are opposed to the first substrate with a gap therebetween and emit electrons to excite the phosphor screen. A plurality of support members provided between the first substrate and the second substrate, at least a part of which is formed of an insulating material having a relative permittivity of 3 or less, and which supports an atmospheric pressure acting on the first and second substrates. And a method of manufacturing an image display device comprising:
Prepare a mold with multiple openings to mold the spacer,
Filling each opening of the mold with a spacer forming material and an insulating material having a relative dielectric constant of 3 or less,
A method of manufacturing an image display device, comprising solidifying the filled spacer forming material and insulating material to form a spacer. A first substrate having a phosphor screen, and a second substrate provided with a plurality of electron emission sources that are opposed to the first substrate with a gap therebetween and emit electrons to excite the phosphor screen. A plurality of support members provided between the first substrate and the second substrate, at least a part of which is formed of an insulating material having a relative permittivity of 3 or less, and which supports an atmospheric pressure acting on the first and second substrates. And a method of manufacturing an image display device comprising:
Prepare a mold with multiple openings to mold the spacer,
Filling each opening of the mold with a spacer forming material,
Solidifying the filled spacer forming material to form a spacer,
A method of manufacturing an image display device, comprising applying or bonding an insulating material having a relative dielectric constant of 3 or less to a tip portion of the formed spacer on the second substrate side.

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