JP2004214146A - Image display device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an image display device, and its manufacturing method, with an excellent voltage-withstanding property against discharge and an improved image definition. <P>SOLUTION: The device is provided with a first substrate 10 having an image display face, a second substrate arranged in opposition to the first substrate with a gap in between and fitted with a plurality of electron sources 18 exciting the image display face. A plurality of spacers 30a, 30b supporting an atmospheric pressure load acting on a plate-shaped grid 24 and the substrate are fitted between the first and the second substrates. At least either surface of the grid 24 is coated with a high-resistance film 40. A softening point of glass forming the spacers is set lower than that of glass forming the high-resistance film. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an image display device including a pair of substrates disposed to face each other and a plurality of electron sources disposed on one substrate, and a method for manufacturing the same.
[0002]
[Prior art]
2. Description of the Related Art In recent years, there has been a demand for a high-definition image display device for high-definition broadcasting or a high-resolution image display device associated therewith. In order to achieve these demands, it is necessary to flatten the screen surface and increase the resolution, and at the same time, reduce the weight and thickness.
[0003]
As an image display device that satisfies the above demands, for example, a flat display device such as a field emission display (hereinafter, referred to as FED) has attracted attention. This FED has a first substrate and a second substrate which are opposed to each other with a predetermined gap therebetween, and these substrates are connected to each other directly or via a rectangular frame-shaped side wall, and are connected to each other via a vacuum frame. Constructs an enclosure. A phosphor layer is formed on the inner surface of the first substrate, and a plurality of electron-emitting devices are provided on the inner surface of the second substrate as electron sources that excite the phosphor layer to emit light.
[0004]
Further, in order to support an atmospheric pressure load applied to the first substrate and the second substrate, a plurality of spacers are provided between the substrates as a support member. In the FED, when displaying an image, an anode voltage is applied to the phosphor layer, and the electron beam emitted from the electron-emitting device is accelerated by the anode voltage to collide with the phosphor layer, whereby the phosphor is formed. It emits light and displays an image.
[0005]
In such an FED, the size of the electron-emitting device is on the order of micrometers, and the distance between the first substrate and the second substrate can be set on the order of millimeters. For this reason, it is possible to achieve higher resolution, lighter weight, and thinner image display devices as compared with a cathode ray tube (CRT) currently used as a display of a television or a computer (for example, see Patents). Reference 1).
[0006]
[Patent Document 1]
JP 2001-272926 A
[Problems to be solved by the invention]
In the image display device as described above, in order to obtain practical display characteristics, it is necessary to use a phosphor similar to a normal cathode ray tube and set the anode voltage to several kV or more, preferably 10 kV or more. . However, the gap between the first substrate and the second substrate cannot be made so large from the viewpoint of resolution, characteristics of the support member, manufacturability, and the like, and needs to be set to about 1 to 2 mm. Therefore, it is inevitable that a strong electric field is formed between the first substrate and the second substrate, and a discharge occurs between the two substrates.
[0008]
Then, when the discharge occurs, the electron emission element and the phosphor layer provided on the substrate may be damaged or deteriorated, and the display quality may be deteriorated. Discharges that lead to such defects are not desirable as products. For this reason, it is necessary to provide the first substrate or the second substrate with a withstand voltage structure for preventing discharge or a discharge current reduction structure for making the discharge path high impedance. There has been a problem that a reduction in performance and an increase in manufacturing cost cannot be avoided.
[0009]
The present invention has been made in view of the above points, and an object of the present invention is to provide an image display device having excellent withstand voltage against discharge and improved image quality, and a method of manufacturing the same.
[0010]
[Means for Solving the Problems]
In order to achieve the above object, an image display device according to an aspect of the present invention is arranged such that a first substrate having a phosphor screen is opposed to the first substrate with a gap therebetween, and emits electrons to form the first substrate. A second substrate provided with a plurality of electron sources for exciting the phosphor screen, and a plurality of electron beam passage holes provided between the first and second substrates and each corresponding to the electron source; A plate-shaped grid, a high-resistance coating mainly composed of glass formed on at least one surface of the grid, and an insulating material mainly composed of glass, respectively, fixed to the grid and the A plurality of spacers disposed between the first substrate and the second substrate, the spacers supporting an atmospheric pressure load acting on the first and second substrates. It is not more than the softening point of the formed glass.
[0011]
According to another aspect of the present invention, there is provided a method of manufacturing an image display device, comprising: a first substrate having a phosphor screen; a first substrate having a gap between the first substrate and a first substrate; A second substrate provided with a plurality of electron sources for exciting a surface, and a plate provided between the first and second substrates and having a plurality of electron beam passage holes respectively corresponding to the electron sources; -Shaped grid, a high-resistance coating mainly composed of glass formed on at least one surface of the grid, and each formed of a material mainly composed of glass, fixed to the grid and the first substrate And a plurality of spacers disposed between the first and second substrates and supporting an atmospheric pressure load acting on the first and second substrates.
Prepare a plate-like grid on which a plurality of electron beam passage holes are formed, apply a high-resistance substance mainly composed of glass to at least one surface of the grid, dry, and dry the high-resistance substance. A high-resistance coating is formed by firing and vitrification, and a glass having a softening point equal to or lower than the softening point of the glass on which the high-resistance coating is formed is mainly formed on the surface of the grid on which the high-resistance coating is formed. A plurality of spacers formed into a predetermined shape by a spacer material as a component are arranged, and the plurality of spacers are baked and vitrified at a temperature equal to or lower than the softening point of the glass on which the high-resistance coating is formed, and integrated with the grid. A spacer is formed, and the first substrate and the second substrate are joined to each other with the grid on which the spacer is formed being arranged at a predetermined position between the first substrate and the second substrate. It is characterized by a door.
[0012]
According to the image display device and the method of manufacturing the image display device configured as described above, the provision of the high-resistance coating on the surface of the grid makes it possible to greatly reduce the discharge current generated even if a discharge occurs. Thereby, the discharge breakdown of the electron source due to the discharge from the first substrate is reduced, and an image display device with improved withstand voltage against discharge and image quality can be obtained.
[0013]
The softening point of the glass constituting the spacer material is set to be lower than the softening point of the glass constituting the high resistance film. Therefore, in the manufacturing process, after forming the high-resistance coating on the grid and then forming the spacer, only the spacer material can be vitrified without softening the high-resistance coating, and the manufacturing process can be optimized. Further, when the softening point of the glass constituting the spacer material is substantially equal to the softening point of the glass constituting the high resistance film, the spacer material and the high resistance hard film can be simultaneously vitrified, thereby simplifying the manufacturing process. It becomes possible.
[0014]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment in which the present invention is applied to a surface conduction electron-emitting device (hereinafter, referred to as an SED), which is a type of FED, as a flat image display device will be described in detail with reference to the drawings.
As shown in FIGS. 1 to 3, the SED includes a first substrate 10 and a second substrate 12 each formed of a rectangular glass plate as a transparent insulating substrate. They are arranged facing each other with a gap of 0 mm. The second substrate 12 is formed to have a slightly larger dimension than the first substrate 10. The first substrate 10 and the second substrate 12 are joined to each other via a rectangular frame-shaped side wall 14 made of glass to form a flat rectangular vacuum envelope 15.
[0015]
On the inner surface of the first substrate 10, a phosphor screen 16 is formed as a phosphor screen. The phosphor screen 16 is configured by arranging phosphor layers R, G, B, and a black coloring layer 11 that emit red, blue, and green light upon collision of electrons. These phosphor layers R, G, and B are formed in stripes or dots. A metal back 17 made of aluminum or the like is formed on the phosphor screen 16. Note that a transparent conductive film or a color filter film made of, for example, ITO may be provided between the first substrate 10 and the phosphor screen 16.
[0016]
On the inner surface of the second substrate 12, a large number of surface conduction electron-emitting devices 18 each emitting an electron beam are provided as electron sources for exciting the phosphor layer of the phosphor screen 16. These electron-emitting devices 18 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. Each of the electron-emitting devices 18 includes an electron-emitting portion (not shown), a pair of device electrodes for applying a voltage to the electron-emitting portion, and the like. On the inner surface of the second substrate 12, a number of wirings 21 for supplying a potential to the electron-emitting devices 18 are provided in a matrix, and the ends of the wirings 21 are drawn out of the vacuum envelope 15.
[0017]
The side wall 14 functioning as a bonding member is sealed to the peripheral portion of the first substrate 10 and the peripheral portion of the second substrate 12 by a sealing material 20 such as low-melting glass, low-melting metal, or the like. The second substrates are joined together.
[0018]
As shown in FIGS. 2 and 3, the SED includes a spacer assembly 22 disposed between the first substrate 10 and the second substrate 12. In the present embodiment, the spacer assembly 22 includes a plate-shaped grid 24 and a plurality of columnar spacers integrally provided on both sides of the grid.
[0019]
More specifically, the grid 24 has a first surface 24a facing the inner surface of the first substrate 10 and a second surface 24b facing the inner surface of the second substrate 12, and is arranged in parallel with these substrates. A large number of electron beam passage holes 26 are formed in the grid 24 by etching or the like. The electron beam passage holes 26 are arranged to face the electron-emitting devices 18, respectively, and transmit the electron beams emitted from the electron-emitting devices. The electron beam passage hole 26 is formed in a rectangular shape of, for example, 0.15 to 0.25 mm × 0.15 to 0.25 mm.
[0020]
The grid 24 is formed of, for example, an iron-nickel-based metal plate to a thickness of 0.1 to 0.25 mm. The first and second surfaces 24a and 24b of the grid 24 and the wall surface of each electron beam passage hole 26 are covered with a high-resistance film 40 having a discharge current limiting effect. The high-resistance film 40 is formed of a high-resistance material containing glass as a main component, and has a resistance value of 1 × 10 ¹² to 1 × 10 ¹⁵ Ω / □. The softening point of the glass constituting the high resistance coating 40 is set to 540 to 550 ° C.
[0021]
The high-resistance film 40 is formed such that the film thickness at the peripheral portion of each electron beam passage hole 26 is smaller than the film thickness in other regions by adjusting the formation conditions, and the average film thickness is 20 to 40 μm. Has become. Here, the periphery of the electron beam passage hole 26 refers to the periphery of the opening on the first surface 24a side of the grid 24 and the periphery of the opening on the second surface 24b side of the electron beam passage hole. By making the high-resistance coating 40 have the above-described thickness distribution, the high-resistance coating can be rounded at each peripheral portion 27 of each electron beam passage hole 26, and the corners where charging is easily generated are eliminated. be able to.
[0022]
A plurality of first spacers 30a are integrally erected on the first surface 24a of the grid 24, and the extending ends of the first spacers 30a extend through the metal back 17 and the black colored layer 11 of the phosphor screen 16 to the first substrate 30a. It is in contact with 10. In the present embodiment, the extending end of each first spacer 30a is in contact with the metal back 17 via the indium layer 31. The indium layer 31 does not affect the trajectory of the electron beam at all, and is not limited to metal as long as it has an appropriate hardness that has the effect of reducing the variation in the height of the spacer.
[0023]
A plurality of second spacers 30 b are integrally formed on the second surface 24 b of the grid 24, and the extended ends of the second spacers 30 b are in contact with the wirings 21 provided on the inner surface of the second substrate 12. I have.
[0024]
Each of the first and second spacers 30a and 30b fixed to the grid 24 is formed in a tapered tapered shape whose diameter decreases from the grid 24 side toward the extending end. The height of the first spacer 30a is formed lower than the height of the second spacer 30b.
[0025]
The first and second spacers 30a and 30b are formed of a spacer material containing glass as a main component, and the softening point of the glass is set to be equal to or lower than the softening point of the glass constituting the high-resistance coating 40 described above. In the present embodiment, the softening point of the glass that is the main component of the spacer material is set to 520 to 530 ° C. lower than the softening point of the glass constituting high-resistance coating 40. The surface resistance of the first and second spacers 30a and 30b is 5 × 10 ¹³ Ω or more. The first and second spacers 30a and 30b are provided between two adjacent electron beam passage holes 26 and extend in alignment with each other. Thus, the first and second spacers 30a, 30b are formed integrally with the grid 24 with the grid 24 sandwiched from both sides.
[0026]
The spacer assembly 22 configured as described above is disposed between the first substrate 10 and the second substrate 12. The first and second spacers 30a and 30b contact the inner surfaces of the first substrate 10 and the second substrate 12 to support the atmospheric load acting on these substrates, and to set the distance between the substrates to a predetermined value. Has been maintained.
[0027]
The SED includes a voltage supply unit (not shown) that applies a voltage to the grid 24 and the metal back 17 of the first substrate 10. The voltage supply unit is connected to the grid 24 and the metal back 17, respectively, and applies, for example, a voltage of 12 kV to the grid 24 and a voltage of 10 kV to the metal back 17.
[0028]
In the SED having the above configuration, when displaying an image, an anode voltage is applied to the phosphor screen 16 and the metal back 17, and the electron beam emitted from the electron-emitting device 18 is accelerated by the anode voltage to collide with the phosphor screen 16. Let it. Thereby, the phosphor layer of the phosphor screen 16 is excited to emit light, and an image is displayed.
[0029]
Next, a method of manufacturing the SED configured as described above will be described. When manufacturing the spacer assembly 22, first, a grid 24 having a predetermined size is prepared. In this case, for example, after a thin plate made of Fe-50% Ni and having a plate thickness of 0.12 mm is degreased, washed and dried, a large number of electron beam passage holes 26 are formed by etching to form the grid 24.
[0030]
Thereafter, a coating liquid containing low-melting-point glass as a main component is applied to the first surface 24a and the second surface 24b of the grid 24 by spraying, and dried at about 90 ° C. for about 15 minutes. At this time, the coating conditions are adjusted, and the coating liquid is applied so that the film thickness at the peripheral portion of the electron beam passage hole 26 is smaller than the film thickness in other regions. Then, after the coating liquid is dried, the coating liquid is baked at about 550 ° C. to vitrify. As a result, the high-resistance coating 40 is formed on the first and second surfaces 24 a and 24 b of the grid 24 and the wall surfaces of the electron beam passage holes 26.
[0031]
Next, first and second rectangular plate-shaped dies (not shown) having substantially the same dimensions as the grid 24 are prepared. Each of the first and second dies has a large number of through holes for forming a spacer. A release material that is thermally decomposed by heat treatment is applied to at least the surfaces of the plurality of through holes for forming the spacers of the first mold and the second mold. Subsequently, the first mold is brought into close contact with the first surface 24a of the grid in a state where each through hole is positioned so as to face a predetermined position of the grid 24. Similarly, the second mold is brought into close contact with the second surface 24b of the grid in a state where each through hole is positioned so as to face a predetermined position of the grid 24. Then, the first mold, the grid 24, and the second mold are fixed to each other using a clamper (not shown) or the like.
[0032]
Thereafter, the through hole of the first mold and the through hole of the second mold are filled with a paste-like spacer forming material. As the spacer material, a glass paste containing at least a UV-curable binder (organic component) and a glass filler is used.
[0033]
Subsequently, the filled spacer material is irradiated with ultraviolet rays (UV) as radiation from the outer surfaces of the first and second molds, and the spacer material is cured by UV. Thereafter, heat curing may be performed as necessary. Next, the release agent applied to each through hole of the first and second molds by heat treatment is thermally decomposed at about 280 ° C. to create a gap between the spacer material and the mold, and the first and second molds are formed. The mold is peeled from the grid 24. As a result, a spacer material formed into a predetermined shape is formed on the first and second surfaces 24a and 24b of the grid 24, respectively.
[0034]
Next, the grid 24 provided with the spacer material is heat-treated in a heating furnace to remove the binder from the spacer material, and then at a temperature of about 520 to 530 ° C. lower than the softening point of the glass constituting the high-resistance coating 40. The spacer material is fully baked and vitrified for 30 minutes to 1 hour. At this time, since the softening point of the glass constituting the spacer material is set to be equal to or lower than the softening point of the glass constituting the high-resistance film 40, the spacer material is vitrified without changing the film quality of the high-resistance film. Can be. The base ends of the first and second spacers 30a and 30b are fused with the high-resistance coating 40 on the surface of the grid 24, and are joined to the grid 24 integrally with the high-resistance coating. Thus, the spacer assembly 22 in which the first and second spacers 30a and 30b are formed on the grid 24 is completed.
[0035]
On the other hand, a first substrate 10 on which a phosphor screen 16 and a metal back 17 are formed, and a second substrate 12 on which an electron-emitting device 18 and a wiring 21 are provided and a side wall 14 is joined are prepared in advance. Keep it.
[0036]
Next, the spacer assembly 22 configured as described above is positioned and arranged on the second substrate 12. At this time, the spacer assembly 22 is positioned so that the extending ends of the second spacers 30b are respectively located on the wirings 21. In this state, the first substrate 10, the second substrate 12, and the spacer assembly 22 are arranged in a vacuum chamber, and after evacuating the vacuum chamber, the first substrate is joined to the second substrate via the side wall 14. . Thus, an SED including the spacer assembly 22 is manufactured.
[0037]
According to the SED configured as described above, the grid 24 is provided between the first and second substrates 10 and 12, and the voltage applied to the grid is made higher than the voltage applied to the first substrate. Is generated between the grid 24 and the second substrate 12, there is no direct discharge between the first substrate 10 and the second substrate 12. Moreover, since the surface of the grid 24 is covered with the high-resistance film 40, even if a discharge occurs, the generated discharge current can be greatly reduced. Therefore, the discharge breakdown of the electron-emitting device 18 due to the discharge from the first substrate 10 is reduced, and an SED with improved withstand voltage against discharge and image quality can be obtained. At the same time, the withstand voltage structure or the discharge current reduction structure for the electron source can be unnecessary or simplified, and the manufacturing cost can be reduced.
[0038]
By changing the resistance value of the high resistance film 40 variously, the occurrence rate of discharge breakdown of the electron-emitting device was measured. As a result, when the resistance value of the high-resistance coating 40 was 1 × 10 ⁷ to 1 × 10 ¹¹ Ω / □, the rate of occurrence of discharge breakdown was reduced by 50% as compared with the case where the high-resistance coating was not provided. When the resistance value of the high resistance film 40 was lower than 1 × 10 ⁷ Ω / □, the rate of occurrence of discharge breakdown was improved only by 30%.
[0039]
On the other hand, when the resistance value of the high-resistance film 40 was higher than 1 × 10 ¹¹ Ω / □, the grid 24 repeated charging and discharging, and the display luminance was not stable. This is because although the discharge suppressing effect can be obtained by forming the high resistance coating 40 on the grid 24, if the resistance value is too high, the grid is charged, and as a result, the electron beam is attracted to the grid and passes through the electron beam. It is considered that a case where the light does not pass through the hole 26 occurs. Therefore, by adjusting the resistance value of the high-resistance film 40 in the range of 1 × 10 ⁷ to 1 × 10 ¹¹ Ω / □ as described above, it is possible to suppress discharge breakdown and prevent luminance degradation.
[0040]
Further, according to the present embodiment, the manufacturing process can be optimized by setting the softening point of glass, which is a main component of the spacer material, to be equal to or lower than the softening point of glass of high-resistance coating 40. That is, it is very difficult to apply a high-resistance coating after the spacer material is vitrified in the manufacturing process. Therefore, it is desirable to apply a high-resistance film to the grid 24 and vitrify it first, and then form a spacer and vitrify the grid. At this time, by setting the softening point of the glass of the spacer material to be equal to or lower than the softening point of the glass of the high-resistance coating 40, only the spacer material can be vitrified without the softening of the high-resistance coating. Therefore, it is possible to optimize the manufacturing process and easily manufacture the spacer assembly.
[0041]
Further, according to the present embodiment, the first and second spacers 30a and 30b are fused with the high-resistance coating 40 on the surface of the grid 24, and are joined to the grid 24 integrally with the high-resistance coating. Therefore, the strength of the first and second spacers in the horizontal and vertical directions increases, and as a result, the pressure strength of the entire vacuum envelope 15 can be improved. As compared with the SED in which the high resistance coating of the grid and the spacer are not integrated, the SED according to the present embodiment has an 80% improvement in the pressing strength.
[0042]
In the above-described embodiment, the softening point of the glass forming the spacer material is set lower than the softening point of the glass forming the high-resistance coating. May be set substantially equal to each other. In this case, the spacer assembly 22 can be manufactured by the following steps.
[0043]
First, a coating liquid containing low-melting glass as a main component is applied to the first surface 24a and the second surface 24b of the grid 24 by spraying, and dried at about 90 ° C. for about 15 minutes. After the coating liquid has dried, the first and second dies are brought into close contact with the first surface 24a and the second surface 24b of the grid 24, respectively, and fixed to each other using a clamper or the like, as in the above-described embodiment. I do.
[0044]
Thereafter, the through hole of the first mold and the through hole of the second mold are filled with a paste-like spacer forming material. As the spacer material, a glass paste containing at least a UV-curable binder (organic component) and a glass filler is used.
[0045]
Subsequently, the filled spacer material is irradiated with ultraviolet rays (UV) as radiation from the outer surfaces of the first and second molds, and the spacer material is cured by UV. Thereafter, heat curing may be performed as necessary. Next, the release agent applied to each through hole of the first and second molds is thermally decomposed at about 280 ° C. to create a gap between the spacer forming material and the mold, and the first and second molds are formed. Is peeled off from the grid 24. As a result, a spacer material formed into a predetermined shape is formed on the first and second surfaces 24a and 24b of the grid 24, respectively.
[0046]
Next, the grid 24 provided with the spacer material is heat-treated in a heating furnace to remove the binder from the spacer material. Further, the grid 24 and the spacer material are fully baked at about 550 ° C. for 30 minutes to 1 hour, and the coating liquid on the grid surface and the spacer material are simultaneously vitrified. Thus, the high-resistance coating 40 is formed on the first and second surfaces 24a and 24b of the grid 24 and the wall surfaces of the electron beam passage holes 26, and the spacers 30a and 30b are formed. At this time, the first and second spacers 30a and 30b fuse with the high-resistance coating 40 on the surface of the grid 24 and are joined to the grid 24 integrally with the high-resistance coating. Thus, the spacer assembly 22 in which the first and second spacers 30a and 30b are formed on the grid 24 is completed.
[0047]
According to the above configuration, the same operation and effect as those of the above-described embodiment can be obtained, and at the same time, the spacer material and the high-resistance hard film can be simultaneously fired and vitrified, thereby simplifying the manufacturing process. be able to.
[0048]
In addition, the present invention is not limited to the above-described embodiment, and can be variously modified within the scope of the present invention. For example, as shown in FIG. 4, a configuration may be adopted in which a plurality of spacer openings 28 are provided in the grid 24, and the first and second spacers 30a and 30b are provided so as to overlap the spacer openings. More specifically, the spacer openings 28 are located between the electron beam passage holes 26 and are arranged at a predetermined pitch. The high-resistance coating 40 is formed on the first and second surfaces 24 a and 24 b of the grid 24, the wall surfaces of the electron beam passage holes 26, and the wall surfaces of the spacer openings 28.
[0049]
The first spacer 30a is integrally erected on the first surface 24a of the grid 24 so as to overlap with the spacer opening 28, and the second spacer 30b is overlapped with the second surface of the grid 24 so as to overlap with the spacer opening 28. It is erected integrally on 24b. Thus, each spacer opening 28 and the first and second spacers 30a and 30b are aligned with each other, and the first and second spacers are connected to each other through the spacer opening 28. Therefore, the first and second spacers 30a and 30b are formed integrally with the grid 24 with the grid 24 sandwiched from both sides.
[0050]
Other configurations are the same as those of the above-described embodiment, and the same portions are denoted by the same reference numerals and detailed description thereof will be omitted. According to the embodiment shown in FIG. 4, it is possible to obtain the same operation and effect as those of the above-described embodiment, and it is possible to further improve the pressing strength of the spacer and the entire vacuum envelope. .
[0051]
In the present invention, the diameter and height of the spacer, the dimensions and materials of other components, and the like can be appropriately selected as needed. The electron source is not limited to the surface conduction type electron-emitting device, but can be variously selected from a field emission type, a carbon nanotube, and the like. The present invention is not limited to the SED but can be applied to other FEDs. It is.
[0052]
In the above-described embodiment, the high-resistance film is formed on the first surface, the second surface of the grid, and the wall surface of each electron beam passage hole. However, as long as the high-resistance film is formed on at least one surface of the grid. It is possible to obtain substantially the same functions and effects as those of the above-described embodiment.
[0053]
【The invention's effect】
As described above in detail, according to the present invention, it is possible to provide an image display device having excellent withstand voltage against discharge and improved image quality, and a method of manufacturing the same.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an SED according to an embodiment of the present invention.
FIG. 2 is a perspective view of the SED taken along a line AA in FIG. 1;
FIG. 3 is a sectional view showing the SED.
FIG. 4 is an enlarged sectional view showing a main part of an SED according to another embodiment of the present invention.
[Explanation of symbols]
10: first substrate, 12: second substrate, 14: side wall,
15: vacuum envelope, 16: phosphor screen, 18: electron-emitting device,
22: spacer assembly, 24: grid,
26: electron beam passage hole, 30a: first spacer,
30b: second spacer, 40: high resistance coating

Claims (7)

A first substrate having a phosphor screen,
A second substrate provided with a plurality of electron sources that are opposed to the first substrate with a gap therebetween and emit electrons to excite the phosphor screen;
A plate-like grid provided between the first and second substrates and having a plurality of electron beam passage holes respectively corresponding to the electron sources;
A high-resistance coating mainly composed of glass formed on at least one surface of the grid,
Each of which is formed of a material mainly composed of glass, is fixed to the grid, is disposed between the first substrate and the second substrate, and supports an atmospheric load acting on the first and second substrates. And a spacer,
An image display device, wherein a softening point of the glass on which the spacer is formed is equal to or lower than a softening point of the glass on which the high-resistance film is formed. A first substrate having a phosphor screen,
A second substrate provided with a plurality of electron sources that are opposed to the first substrate with a gap therebetween and emit electrons to excite the phosphor screen;
A spacer assembly provided between the first and second substrates, wherein the spacer assembly is provided on the first and second surfaces facing the first and second substrates, respectively, and on the electron emission source, respectively. A plate-like grid having a plurality of opposed electron beam passage holes, a high-resistance coating mainly composed of glass formed on at least one surface of the grid, and a material mainly composed of glass, And a plurality of columnar first spacers, which are integrally erected on the first surface of the grid and abut against the first substrate, respectively, and are each formed of a material mainly composed of glass. A plurality of columnar second spacers, each of which is integrally erected on a second surface of the grid and abuts on the second substrate, respectively. An image display device, wherein the softening point of the glass forming the p o is less than the softening point of the glass forming the high-resistance film. The image display device according to claim 1, wherein a high resistance film is formed on a second surface of the grid. Each of the first spacers is erected on the first surface of the grid between the electron beam passage holes, and each of the second spacers is on a second surface of the grid between the electron beam passage holes. The image display device according to claim 2, wherein the image display device is provided upright and aligned with the first spacer. The image display device according to claim 1, wherein the high-resistance coating of the grid has a resistance value of 1 × 10 ^{7 to} 1 × 10 ¹¹ Ω / □. A first substrate having a phosphor screen, a second substrate provided with a plurality of electron sources that are opposed to the first substrate with a gap therebetween and emit electrons to excite the phosphor screen, A plate-shaped grid provided between the first and second substrates and having a plurality of electron beam passage holes respectively corresponding to the electron sources; and a glass formed on at least one surface of the grid. A high-resistance coating composed mainly of glass and a material composed mainly of glass, fixed to the grid and disposed between the first substrate and the second substrate; And a plurality of spacers for supporting an acting atmospheric pressure load, and a method of manufacturing an image display device comprising:
Prepare a plate-like grid with multiple electron beam passage holes formed,
After applying a high-resistance substance mainly composed of glass to at least one surface of the grid, dried,
Forming a high-resistance film by firing and vitrifying the dried high-resistance material,
After the formation of the high-resistance coating, a plurality of spacers mainly formed of glass having a softening point equal to or lower than the softening point of the glass on which the high-resistance coating is formed are formed in a predetermined shape on the surface of the grid. Place the spacer,
Firing the plurality of spacers at a temperature equal to or lower than the softening point of the glass on which the high-resistance coating is formed to vitrify, forming a spacer integral with the grid;
A method for manufacturing an image display device, wherein the first substrate and the second substrate are joined to each other with the grid on which the spacers are formed being arranged at predetermined positions between the first substrate and the second substrate. A first substrate having a phosphor screen, a second substrate provided with a plurality of electron sources that are opposed to the first substrate with a gap therebetween and emit electrons to excite the phosphor screen, A plate-shaped grid provided between the first and second substrates and having a plurality of electron beam passage holes respectively corresponding to the electron sources; and a glass formed on at least one surface of the grid. A high-resistance coating composed mainly of glass and a material composed mainly of glass, fixed to the grid and disposed between the first substrate and the second substrate; And a plurality of spacers for supporting an acting atmospheric pressure load, and a method of manufacturing an image display device comprising:
Prepare a plate-like grid with multiple electron beam passage holes formed,
After applying a high-resistance substance mainly composed of glass to at least one surface of the grid, dried,
On the surface of the grid on which the high-resistance substance was applied and dried, the grid was formed into a predetermined shape by a spacer material mainly composed of glass having a softening point substantially equal to the softening point of the glass forming the high-resistance substance. Arrange multiple spacers,
The dried high-resistance substance and the plurality of spacers are simultaneously fired and vitrified, and a high-resistance film and a plurality of spacers are integrally formed on the grid,
An image display device, wherein the first substrate and the second substrate are joined to each other in a state where the grid on which the high resistance film and the spacer are formed is arranged at a predetermined position between the first substrate and the second substrate. Manufacturing method.

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