JP2003297244A - Manufacturing method and manufacturing device of image display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing device wherein an anode voltage can be enhanced while suppressing discharge and it is possible to manufacture a high performance image display device. <P>SOLUTION: In the manufacturing method of the image display device provided with the front face substrate having a fluorescent face, an electron emitting face with a plurality of electron emitting components, and the rear face substrate opposed to the front face substrate, a treatment is carried out to give potential differences between a resistant member 34 with a sheet resistance of 10<SP>2</SP>Ω/square or more and a fluolescent face 6 of the substrate or an electron emitting face 11 are opposedly arranged. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for manufacturing an image display device, and more particularly to a processing method and a processing device for suppressing discharge of a flat image display device using electron-emitting devices.

[0002]

2. Description of the Related Art In recent years, as a next-generation image display device, a flat-type image display device in which a large number of electron-emitting devices are arranged and arranged so as to face a phosphor screen has been under development. Although there are various types of electron-emitting devices, basically all of them use field emission, and a display device using these electron-emitting devices is generally called a field emission display (hereinafter referred to as FED). )It is called. Among FEDs, a display device using a surface conduction electron-emitting device is a surface conduction electron emission display (hereinafter referred to as SED).
However, in this application, the term FED is used as a general term including SEDs.

The FED generally has a front substrate and a rear substrate which are arranged to face each other with a predetermined gap therebetween, and these substrates are vacuumized by bonding their peripheral portions to each other via a rectangular frame-shaped side wall. It constitutes the envelope. The inside of the vacuum container is maintained at a high vacuum with a vacuum degree of about 10 −4 Pa or less. Further, in order to support the atmospheric pressure load applied to the back substrate and the front substrate, a plurality of support members (spacers) are arranged between these substrates.

A phosphor screen including red, blue, and green phosphor layers is formed on the inner surface of the front substrate, and a large number of electron-emitting devices that emit electrons to excite the phosphor to emit light are formed on the inner surface of the rear substrate. Is provided. Also, a large number of scanning lines and signal lines are formed in a matrix and connected to each electron-emitting device. The region where such an electron-emitting device is formed will be referred to as an electron-emitting surface when viewed macroscopically. The size of the electron emission surface is almost the same as that of the fluorescent surface.

An anode voltage is applied to the phosphor screen, and the electron beam emitted from the electron-emitting device is accelerated by the anode voltage and collides with the phosphor screen, whereby the phosphor emits light and an image is displayed.

In such an FED, the gap between the front substrate and the rear substrate can be set to about 1 to 3 mm, which is more than that of a cathode ray tube (CRT) currently used as a display of a television or a computer at present. It is possible to achieve a significant reduction in weight and thickness.

In the FED constructed as described above,
In order to obtain practical display characteristics, it is necessary to use a phosphor similar to that of a normal CRT, and further to use a phosphor screen on which an aluminum thin film called a metal back is formed. In this case, it is desired that the anode voltage applied to the phosphor screen is at least several kV, and preferably 10 kV or more.

However, the gap between the front substrate and the rear substrate cannot be increased so much in view of the resolution and the characteristics of the supporting member, and it is necessary to set the gap to about 1 to 3 mm. Therefore, in the FED, it is unavoidable that a strong electric field is formed in the small gap between the front substrate and the rear substrate,
Discharge (dielectric breakdown) between both substrates becomes a problem.

When discharge occurs, a current of 100 A or more instantaneously flows, and the electron-emitting device or the phosphor screen is destroyed or deteriorated. In addition, the drive circuit may be destroyed. These are collectively referred to as discharge damage.
Such damage is not acceptable as a product. Therefore, in order to put the FED into practical use, it is necessary to prevent damage due to discharge from occurring over a long period of time. However, it is very difficult to completely suppress the discharge over a long period of time.

On the other hand, there is a measure to suppress the scale of the discharge so that the influence on the electron-emitting device can be ignored even if the discharge occurs, instead of preventing the discharge from occurring. As a technique related to such an idea, for example, Japanese Patent Laid-Open No.
Japanese Patent Laid-Open No. 00-311642 discloses a technique in which a metal back provided on the phosphor screen is provided with a notch to form a pattern such as a zigzag pattern to increase the effective inductance / resistance of the phosphor screen. In addition, JP-A-10-326
Japanese Patent Laid-Open No. 583/1983 discloses a technique of dividing a metal back, and Japanese Patent Laid-Open No. 2000-251797 discloses a technique of providing a coating of a conductive material on the divided portions in order to suppress creeping discharge at the divided portions. Has been done.

However, even when such a technique is used, the discharge does not always occur frequently, and the suppression of the discharge remains important. Generally, the voltage at which discharge occurs (hereinafter referred to as the discharge voltage) varies. In addition, discharge may occur after a long period of time. To suppress the discharge, in other words, in consideration of these, the discharge does not occur at all when the anode voltage is applied, or the discharge probability is reduced to a practically acceptable level. The potential difference between the anode and the cathode that can be applied is hereinafter referred to as the breakdown voltage. In some cases, the discharge voltage may be simply referred to as the withstand voltage.

There are various causes of discharge. First, electron emission from minute protrusions or foreign matter on the cathode side is a trigger. Secondly, it is triggered by the particles adhering to the cathode or the anode, or a part of which is peeled off, colliding with the facing surface. In particular, in the FED, a metal back, which is a weak film, is formed on the phosphor screen, and peeling off a part of the film can trigger a discharge. This is a characteristic that is not found in high-voltage equipment in which ordinary metal electrodes face each other. Although various academic studies have been conducted on the cause and mechanism of the discharge, it is hard to say that the details have been clarified yet, and there may be other factors.

A technique called conditioning is generally known as a technique for improving the breakdown voltage. Regarding this, for example, the Discharge Handbook (Ohm, 1
998), page 302. This is to apply a potential difference between the facing surfaces to improve the breakdown voltage. Although there are cases where electric discharge occurs and cases where electric discharge does not occur, in a narrow sense, spark conditioning that causes electric discharge (spark) is sometimes called conditioning. The mechanism by which the breakdown voltage is improved by spark conditioning is not known in detail, but it is thought that the discharge power source such as minute projections and foreign particles is melted and removed by discharge, or the adhered fine particles are removed by the electric field. Has been.

For example, in a CRT, a process of applying a pulse voltage about four times as high as an operating voltage between electrodes of an electron gun to cause discharge about 1,000 times is widely performed. This corresponds to spark conditioning.

However, in the FED, if such spark conditioning is performed, the fluorescent screen and the electron-emitting device will be destroyed or deteriorated. Therefore, this method cannot be simply used.

Although there is a certain effect in the conditioning that does not cause discharge, it is desirable to increase the applied potential difference as much as possible in this case as well, in which case discharge may occur unintentionally, causing discharge damage. Is inevitable. Also, an effect comparable to spark conditioning cannot be expected.

Other than the conditioning, pressure resistance improving measures include optimization of materials, structures and processes, cleaning of the manufacturing environment, cleaning, and air blowing. However, it is difficult to raise the withstand voltage to a desired value only by such measures, and a more effective withstand voltage improvement measure has been strongly desired. Also, from the viewpoint of cost reduction, it is not desirable to have a very high degree of cleanliness or to thoroughly remove fine particles.

[0018]

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention As mentioned above,
In the FED, it is necessary to increase the breakdown voltage and suppress the discharge. Although there is a method called conditioning as a method for increasing the breakdown voltage, in the FED, the electron-emitting device and the fluorescent screen are formed on the counter electrode. Therefore, when this method is used, the electron-emitting device and the fluorescent screen are destroyed or deteriorated. Resulting in. Therefore, this method cannot be used.

There are various pressure resistance measures other than conditioning.
It was difficult to raise the breakdown voltage to a desired value.

By decreasing the anode voltage or increasing the gap between the substrates, it is possible to make the discharge less likely to occur, but in this case, the brightness, the resolution, the life of the phosphor screen and other characteristics are sacrificed. . Therefore, in order to realize a high-performance FED, a technique capable of increasing the breakdown voltage has been strongly desired.

The present invention has been made in view of the above points, and it is possible to manufacture a high-performance image display device by increasing the breakdown voltage, suppressing discharge, and increasing the anode voltage. It is to provide a manufacturing method and a manufacturing apparatus of a display device.

[0022]

In order to solve the above problems, a method of manufacturing an image display device according to an aspect of the present invention is
A method of manufacturing an image display device, comprising: a front substrate having a phosphor screen; and a rear substrate having an electron emission surface provided with a plurality of electron emission elements and facing the front substrate, a sheet comprising: A resistive member having a resistance of 10 ² Ω / □ or more and the fluorescent surface or the electron emitting surface are arranged so as to face each other, and a treatment for applying a potential difference between the resistive member and the fluorescent surface or the electron emitting surface is performed. It is characterized by

An apparatus for manufacturing an image display device according to another aspect of the present invention includes a front substrate having a phosphor screen and an electron emission surface provided with a plurality of electron emission elements. In a manufacturing apparatus of an image display device including a back substrate arranged to face each other, a sheet resistance of 10 ² Ω / □ arranged to face the fluorescent surface or the electron emitting surface.
It is characterized by comprising the above resistive member and a potential difference applying means for applying a potential difference between the fluorescent member or the electron emitting surface and the resistive member.

[0024]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a method of manufacturing an image display apparatus and a manufacturing apparatus according to an embodiment of the present invention will be described in detail with reference to the drawings. First, the configuration of an FED, which is an image display device to which the present invention is applied, will be described. As shown in FIGS. 1 and 2, this FED includes a front substrate 2 and a rear substrate 1 each made of rectangular glass, and these substrates are arranged facing each other with a gap of 1 to 2 mm. The front substrate 2 and the rear substrate 1 are
Peripheral portions are joined to each other through the side wall 3 having a rectangular frame shape to form a flat rectangular vacuum envelope 4 whose inside is maintained at a high vacuum of 10 ⁻⁴ Pa or less.

A fluorescent screen 6 is formed on the inner surface of the front substrate 2. The phosphor screen 6 is composed of a phosphor layer that emits red, green, and blue, a black matrix light-shielding layer, and a metal back layer 7 formed on these.

On the inner surface of the rear substrate 1, a large number of electron emitting elements 8 for emitting an electron beam for exciting the phosphor layer are provided. These electron-emitting devices 8 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. The electron-emitting device is driven by matrix wiring (not shown). The area where these electron-emitting devices are formed is the electron-emitting surface 1
1 is formed.

Between the rear substrate 1 and the front substrate 2, a large number of plate-shaped or columnar spacers 10 are arranged for atmospheric pressure resistance. An anode voltage is applied to the phosphor screen 6 via the metal back layer 7, and the electron beam emitted from the electron-emitting device 8 is accelerated by the anode voltage and collides with the phosphor screen 6. As a result, the corresponding phosphor layer emits light and an image is displayed.

Next, a manufacturing method and a manufacturing apparatus for performing processing for increasing the breakdown voltage on the rear substrate 1 and the front substrate 2 used in the FED configured as described above will be described.

The process performed in the present invention will be described below.
The term “withstand voltage processing” is used, and the terms “withstand voltage processing method” and “withstand voltage processing apparatus” are used in correspondence with this. Although the withstand voltage treatment is considered to be a kind of conditioning, it has a characteristic peculiar to the present invention, and thus such a unique name is used.

Since the processing of the rear substrate 1 and the processing of the front substrate 2 have many common matters, the case of processing the front substrate 2 will be described first. As shown in FIG. 3, the pressure resistance processing device includes a vacuum container 30 and an exhaust device 32 that evacuates the inside of the vacuum container. A pressure resistant substrate 34, which is a resistive member, is held substantially horizontally in the vacuum container 30 by a support 36. The breakdown voltage treated substrate 34 has, for example, a base plate 38 formed of an insulating material such as glass, and a resistance film 40 formed over the entire upper surface of the base plate. The sheet resistance value R of the resistance film 40 is set to 10 ⁷ Ω / □. The resistance film 40 is slightly larger than the phosphor screen 6 so that its edge does not face the phosphor screen 6, and faces the entire surface of the phosphor screen 6. The resistance film 40 is connected to the ground.

A holder 42 for holding the front substrate 2 in a state of facing the pressure-resistant substrate 34 is provided on the upper portion of the vacuum container 30. The holder 42 is connected to the ground. A high voltage is applied to the fluorescent screen 6 by the power supply 44 via the metal back layer 7. By doing this, the front substrate
It is supported by the Coulomb force with the holder 42. Since the front substrate 2 has a high dielectric constant, the Coulomb force with the holder can be made larger than the Coulomb force from the pressure resistant substrate 34. Needless to say, the method of supporting the front substrate 2 is not limited to such a method using Coulomb force.

Although the power source 44 is used as the potential difference applying means in the present embodiment, the present invention is not limited to this, and various methods such as using an electron beam can be applied. Also,
The positive / negative of the electric potential and the like can be appropriately selected.

Next, a method of withstanding the front substrate 2 will be described. First, the front substrate 2 is held by the holder 42.
The phosphor screen 6 is held in a state of facing the resistance film 40 of the breakdown voltage processing substrate 34. The inside of the vacuum container 30 is evacuated to about 10 ⁻⁴ Pa to create a vacuum atmosphere.

In this state, a positive voltage is applied to the metal back layer 7 by the power source 44 to give a potential difference between the phosphor screen 6 and the resistance film 40. By doing so, discharge is generated.
The discharge voltage rises each time the discharge is repeated, and the withstand voltage improves after several discharges occur. On the other hand, since the resistance film 40 is used, it is possible to prevent the fluorescent screen from being destroyed or deteriorated even if discharge occurs.

In carrying out the breakdown voltage treatment, the basic parameters are the interval ht between the phosphor screen 6 and the breakdown voltage treated substrate 34 and the applied potential difference Vt. In the FED of this embodiment, the distance ho between the fluorescent screen 6 and the electron emission surface 11 during operation is 1.5 m.
m, the operating voltage Vo is 9 kV. On the other hand, in the present embodiment, the interval ht is 1.0 mm and the maximum Vt is 10 kV. Here, considering the electric field applied to the phosphor screen, during operation: Eo = Vo / ho = 9 kV / 1.5 mm = 6
During kV / mm processing: Et = Vt / ht = 10 kV / 1.0 mm =
It is 10 kV / mm 2.

Here, in general, the electric field becomes stronger as it is sharpened, and various irregularities are present on the fluorescent surface and the electron emission surface. Therefore, when viewed microscopically, the electric field changes in a complicated manner. However, in the present invention, when simply saying an electric field, it means a macro electric field calculated by the above formula.

Since the energy of discharge is proportional to the square of the voltage, it is preferable to increase Vt in order to reduce the scale of discharge and suppress discharge damage. On the other hand, although it cannot be generally stated, it is the electric field E applied to the phosphor screen 6 that determines whether or not the discharge occurs, and it is preferable that Et be larger than Eo in order to improve the breakdown voltage. . By doing so, it becomes possible to cause the discharge that occurs when Eo is applied in advance.

From the above viewpoint, it is advantageous to make ht as small as possible. However, practically, it is not desirable to make ht too small in consideration of the surface deflection. The above values are examples determined in consideration of the above. In general, Vt and ht are not limited to this and can be selected in various ways. It has been confirmed that the breakdown voltage can be slightly improved even if Et is not larger than Eo, and it is not essential to make Et larger than Eo.

In order to find the sheet resistance value ρs of the resistance film 40 suitable for the withstand voltage treatment, the following experiment was conducted using the above-mentioned processing apparatus. A front substrate for SED having a diagonal diameter of 30 inches was used as the substrate to be pressure-treated. As the withstand voltage-treated substrate, a substrate having a sheet resistance ρs varied in the range of 10 ² Ω / □ to 10 ¹¹ Ω / □ by appropriately selecting the material and manufacturing method of the resistance layer was used. The distance ht between the phosphor screen 6 and the pressure-resistant substrate 34 was changed to 2 mm, 1 mm and 2 mm. The maximum value Vtmax of the applied voltage Vt is ht = 1 m
In the case of m, it was set to 10 kV, and in the case of ht = 2 mm, it was set to 20 kV. If the conditions are good, the discharge voltage gradually rises while varying each time a discharge occurs, and finally Vtmax can be continuously applied. If the conditions are not good, the discharge voltage does not rise so much even if discharge occurs. Thus, the damage of the front substrate after several discharges were evaluated. The results are shown in Table 1A.
And shown in Table 1B. The evaluation of the discharge damage is indicated by ◯ when no damage is observed, or when the damage is extremely slight and acceptable, and by x when unacceptable damage is observed.

[0040]

[Table 1]

From these results, it can be said that the sheet resistance ρs is preferably 10 ⁴ Ω / □ or more in order to suppress discharge damage. When ht is small, 10 ³ Ω / □
However, it does not cause damage, but this is a condition where there is no room and it is not desirable.

On the other hand, it was confirmed that when ρs is 10 ⁹ Ω / □ or more, the effect of improving the withstand voltage becomes smaller. It is considered that this is due to the following two factors.

Generally, before discharge, a small amount of electrons are emitted from the cathode toward the anode by field emission. This is also referred to as the precursor current and will be referred to hereafter. The amount of precursor current can reach the order of μA. Therefore, if ρs is set too high, the voltage drop due to the precursor current becomes a problem. As a guide, 1
When a current of 1 μA flows through the resistance of ⁰⁹ Ω, a voltage drop of 1 kV occurs. Therefore, in order to apply a constant voltage to the entire surface, it is necessary to make the resistance not too high.

When ρs becomes too high, the scale of discharge becomes too small, and the discharge cannot have enough energy to remove the discharge power source. When ρs is low, no further discharge occurs at the place where discharge occurs, but when ρs is 10 ⁹ Ω / □, there are cases in which discharge occurs repeatedly even if discharge occurs. Further, when ρs was 10 ¹¹ Ω / □, discharge itself did not occur.

For these reasons, it can be said that ρs is preferably set to 10 ⁸ Ω / □ or less. However, even if ρs is higher than this, the withstand voltage improving effect is not completely absent. It is assumed that the pressure resistance treatment has an effect of removing fine particles by Coulomb force and an effect of removing a discharge power source by causing discharge, but it is considered that the latter effect is not lost even when ρs is high.

When a front substrate to which a discharge scale suppressing technique based on the technique disclosed in Japanese Patent Laid-Open No. 10-326583 or 2000-251797 is applied, ρs = 10 ² Ω / □ But there was no discharge damage. Originally, this technique is intended to suppress discharge damage even if ρs = 0 Ω / □, but since a higher voltage is applied during withstand voltage processing than during actual operation, the original In some cases, the discharge damage could not be avoided with 0Ω / □.

The value of ht is not limited to the value of the above experiment, but in practice, it is difficult to consider making ht too small or too large due to the above-mentioned constraint, and the range of this degree is not considered. This result can be generalized because there is a natural choice to make. From the above, ρs
Is preferably 10 ⁴ to 10 ⁸ Ω / □. However, generally, the effect can be obtained also by setting ρs to 10 ² Ω / □ or more.

It should be noted that although it is desirable to cause a discharge to improve the breakdown voltage, the breakdown voltage improving effect can be recognized even without the discharge. In addition, if the Et value is set to a predetermined value, the discharge voltage may not be generated during the withstand voltage process, especially if the withstand voltage is good. Therefore, in the present invention, it is not essential to cause the discharge.

As described above, the breakdown voltage can be improved without causing damage to the front substrate by performing the breakdown voltage using the breakdown voltage-treated substrate on which the resistance film is formed. This makes it possible to increase the anode voltage during the display operation or to further narrow the gap between the front substrate 2 and the rear substrate 1. As a result, it is possible to improve display performance such as brightness and resolution while suppressing discharge. In addition, by increasing the anode voltage, it is possible to reduce the deterioration of the phosphor over time and to extend the life of the phosphor.

Further, not only the front substrate 2 but also the rear substrate 1 can be subjected to the withstand voltage treatment as in the above-described embodiment. That is, the rear substrate 1 is loaded into the vacuum container 30, and the electron emission surface 11 provided with the electron emission elements 8
And the resistance film 40 of the breakdown voltage-treated substrate 34 are held in a state of facing each other. The electron emission surface 11 is set to the ground potential. After the inside of the vacuum container 30 is evacuated, a high voltage is applied to the pressure resistant substrate 34 by the power supply 44. Thereby, the back substrate 1 can be pressure-resistant.

The expression that a voltage is applied to the electron emission surface is used, but this specifically means that a voltage is applied to the matrix wiring and the electron emission element. There may be other exposed areas of the rear substrate 1 on the electron emission surface, but if these areas are close to insulation, the voltage may not be clearly determined.

Next, regarding the second embodiment of the present invention,
Description will be given with reference to FIG. The same parts as those of the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted. In this embodiment, the breakdown voltage-treated substrate 34 has a base plate 38 formed of glass, for example, in the shape of an elongated plate, and a resistance film 40 formed on the lower surface of the base plate. Therefore, the breakdown voltage treated substrate 34
Has a smaller area than the fluorescent surface 6 and the electron emission surface 11. The pressure-resistant processed substrate 34 is
It is movably supported in the horizontal direction by the scanning mechanism 46. The resistance film 40 has a ground potential, and is supported horizontally while facing downward.

The front substrate 2, which is the substrate to be processed, is held in a substantially horizontal state by the support base 36 provided in the vacuum container 30, and the fluorescent screen 6 is provided with a predetermined gap to maintain the resistance of the pressure-resistant substrate 34. It faces the membrane 40.

In a state where the inside of the vacuum container 30 is evacuated, a potential is applied to the phosphor screen 6 through the metal back 7. In this state, the pressure resistant substrate 34 is moved to scan the entire surface of the front substrate 2. By doing so, breakdown voltage processing can be performed.

In this embodiment, the pressure-resistant processed substrate 34 is moved, but it is also possible to move the front substrate 2 which is the substrate to be processed. It is also possible to move both. In general, it goes without saying that the moving method does not matter as long as the both can be moved relatively and the entire surface of the substrate to be processed can be scanned and processed.

The use of such a method is advantageous in that the strength of the pressure-resistant substrate required for preventing the deflection by Coulomb force can be reduced. Since the pressure-resistant substrate may be replaced as appropriate, it is advantageous that the area is small from the viewpoint of cost reduction.

Further, it is conceivable that the front substrate 2 moves like a conveyor in the actual manufacturing process. In such a case, the withstand voltage process can be performed by the method of this embodiment without providing a drive mechanism for the withstand voltage process again.

When scanning is performed in this manner, it is possible to reduce the area of the breakdown voltage processing substrate, but it is not essential to reduce the area. For example, considering that the electric field application time is made as long as possible while increasing the moving speed, it is preferable that the breakdown voltage-treated substrate is as large as the substrate to be treated.

Although the front substrate has been described as an example in the present embodiment, the rear substrate 1 may be subjected to a withstand voltage treatment as described in the first embodiment.

The resistive member is not limited to the plate shape like the above-mentioned withstand voltage processed substrate 34, and the shape is not limited as long as the member with the resistance film can give a predetermined electric field to the withstand voltage processed member. Further, the resistive member is not limited to the combination of the resistive film and the base member, and the resistive member itself may be formed of a material having resistance.

The sheet resistance generally has an electric field dependency. The sheet resistance shown in this specification is measured by using a general sheet resistance measuring device, and is 10 to 10.
It corresponds to a value in an electric field of about 00 V / mm. Therefore, the sheet resistance in the present invention refers to the value in this region.

The pressure resistance process of the present invention is preferably performed in a vacuum. In general, the breakdown voltage in the atmosphere is considerably lower than that in a vacuum, so that the electric field Et cannot be sufficiently increased in the atmosphere. However, it has been confirmed that the application of a considerably low Et has a slight withstand voltage improving effect, and it is not essential to perform the treatment in a vacuum.

When the front substrate and the rear substrate of the FED are sealed in a vacuum atmosphere, the pressure resistance process described above can be performed in a series of sealing steps performed in a vacuum atmosphere. .

The positive / negative of the voltage applied to the substrate to be processed and the substrate to be processed is not limited to the one shown in the embodiment, and can be appropriately selected. What is important is the potential difference between the two substrates. For example, instead of connecting one to the ground, positive and negative voltages may be applied to the respective substrates to form a predetermined potential difference. Further, the positive / negative may be changed several times during the processing.

Further, in the present invention, the gap between the processed substrate and the processed substrate does not have to be constant, and may be changed with the passage of time, or when scanning is performed, it may be changed depending on the place. Is. In addition, the present invention is not limited to the above-described embodiments, but can be variously modified within the scope of the present invention.

[0066]

As described in detail above, according to the method and apparatus for manufacturing an image display device of the present invention, the breakdown voltage can be increased, and therefore the anode voltage can be increased while suppressing the discharge. As a result, a high-performance image display device can be manufactured.

[Brief description of drawings]

FIG. 1 is a perspective view showing an FED to be processed by a breakdown voltage processing apparatus and a breakdown voltage processing method according to the present invention.

2 is a cross-sectional view taken along the line AA of FIG.

FIG. 3 is a sectional view showing a breakdown voltage processing apparatus according to the first embodiment of the present invention.

FIG. 4 is a sectional view showing a breakdown voltage processing device according to a second embodiment of the present invention.

[Explanation of symbols]

1 ... Rear substrate 2 ... Front substrate 3 ... Side wall 4 ... Vacuum envelope 6 ... Phosphor screen 7 ... Metal back layer 8 ... Electron emitting device 11 ... Electron emission surface 34 ... Withstand voltage processing substrate 38 ... Base plate 40 ... Resistive film 44 ... Power source 46 ... Scanning mechanism

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Hiroki Murata             2 shares, 1-9-1 Harara-cho, Fukaya City, Saitama Prefecture             Company Toshiba Fukaya Factory F-term (reference) 5C012 AA05 BD04                 5C027 BB01 BB02 BB04                 5C036 EE08 EE14 EF01 EF06 EF09                       EG12 EG28 EH21 EH26

Claims (12)

[Claims] 1. An image display device, comprising: a front substrate having a fluorescent screen; and a rear substrate having an electron emitting surface provided with a plurality of electron emitting elements and facing the front substrate. In the manufacturing method, a resistive member having a sheet resistance of 10 ² Ω / □ or more and the fluorescent surface or the electron emitting surface are arranged to face each other, and the resistive member and the fluorescent surface or the electron emitting surface are disposed between the resistive member and A method of manufacturing an image display device, which comprises performing a process of giving a potential difference. 2. The sheet resistance of the resistance member is 10 ⁴ Ω /
It is □ or more and 10 ⁸ Ω / □ or less, and the manufacturing method of the image display device according to claim 1, wherein. 3. The electric field applied to the fluorescent screen or the electron emitting surface due to the potential difference is larger than the electric field applied to the fluorescent screen or the electron emitting surface when the image display device operates. The method for manufacturing an image display device according to claim 1 or 2. 4. The image display device according to claim 1, wherein a discharge is generated between the fluorescent member or the electron emitting surface and the resistive member during the processing. Manufacturing method. 5. The method of manufacturing an image display device according to claim 1, wherein the treatment is performed in a vacuum. 6. The image display device according to claim 1, wherein the resistance member and the fluorescent surface or the electron emission surface are moved relative to each other to provide a potential difference. Manufacturing method. 7. An image display device comprising: a front substrate having a fluorescent screen; and a rear substrate having an electron emitting surface provided with a plurality of electron emitting devices and being arranged to face the front substrate. In the manufacturing apparatus, the fluorescent surface or the electron emitting surface is arranged to face
An image display device comprising: a resistive member having a sheet resistance of 10 ² Ω / □ or more; and a potential difference applying means for applying a potential difference between the fluorescent member or the electron emitting surface and the resistive member. Manufacturing equipment. 8. The sheet resistance of the resistance member is 10 ⁴ Ω /
The device for manufacturing an image display device according to claim 7, wherein the device is □ or more and 10 ⁸ Ω / □ or less. 9. The resistive member comprises a base plate and a resistive film formed on the surface of the base plate and facing the entire fluorescent surface or the electron emitting surface. Item 9. An apparatus for manufacturing an image display device according to item 7 or 8. 10. The apparatus for manufacturing an image display device according to claim 7, further comprising a moving mechanism that relatively moves the resistive member and the fluorescent surface or the electron emitting surface. . 11. An apparatus according to claim 10, wherein the area of the resistive member is smaller than that of the fluorescent surface or the electron emitting surface. 12. A vacuum container for accommodating the front substrate or the rear substrate and the resistive member therein, and an exhaust device for evacuating the inside of the vacuum container. 12. An apparatus for manufacturing an image display device according to any one of items 1 to 11.