JP2004319179A - Breakdown voltage treatment method and breakdown voltage treatment device of substrate for picture displace device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a breakdown voltage treatment method and a breakdown voltage treatment device of a substrate wherein manufacturing of a picture display device high in breakdown voltage is enabled. <P>SOLUTION: In such a state that a plurality of slender conductors 46 mutually arranged in parallel and a surface of the substrate 11 are made to be opposed in parallel with a gap, the substrate and a plurality of the conductors are made to be displaced relatively in a direction tilted toward the longitudinal direction of the respective conductors, and the whole surface of the substrate is scanned by the plurality of the conductors. During a period of relative displacement, an electric field is applied by giving an electric potential difference between the substrate and the plurality of the conductors, and an electric field-treatment is applied to the substrate. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a withstand voltage processing method and a withstand voltage processing apparatus for performing a withstand voltage process on a substrate used in an image display device.
[0002]
[Prior art]
In recent years, as a next-generation image display device, a flat-type image display device in which a large number of electron-emitting devices are arranged and arranged to face a phosphor screen has been developed. Although there are various types of electron-emitting devices, all of them basically use field emission, and a display device using these electron-emitting devices is generally called a field emission display (hereinafter, referred to as FED). )is called. Among FEDs, a display device using a surface conduction electron-emitting device is also called a surface conduction electron-emitting display (hereinafter, referred to as an SED). In the present application, the term FED is used as a collective term that includes the SED. .
[0003]
An FED generally has a front substrate and a rear substrate that are opposed to each other with a predetermined gap therebetween, and these substrates are joined to each other through a rectangular frame-shaped side wall to form a vacuum envelope. Is composed. The inside of the vacuum vessel is maintained at a high vacuum having a degree of vacuum of about 10 ⁻⁴ Pa or less. Further, in order to support the atmospheric load applied to the rear substrate and the front substrate, a plurality of support members are disposed between these substrates.
[0004]
A phosphor screen including red, blue, and green phosphor layers is formed on the inner surface of the front substrate, and a number of electron-emitting devices that emit electrons that excite the phosphor to emit light are provided on the inner surface of the rear substrate. ing. A large number of scanning lines and signal lines are formed in a matrix and are connected to each electron-emitting device. Then, an anode voltage is applied to the phosphor screen, and the electron beam emitted from the electron-emitting device is accelerated by the anode voltage and collides with the phosphor screen, so that the phosphor emits light and an image is displayed.
[0005]
In such an FED, the gap between the front substrate and the rear substrate can be set to about 1 to 3 mm, which is much larger than that of a cathode ray tube (CRT) currently used as a display of a television or a computer. Lightening and thinning can be achieved.
[0006]
In the FED configured as described above, in order to obtain practical display characteristics, a phosphor similar to an ordinary CRT is used, and a phosphor screen in which an aluminum thin film called a metal back is formed on the phosphor. It is necessary to use. In this case, it is desired that the anode voltage applied to the phosphor screen be at least several kV, preferably at least 10 kV.
[0007]
However, the gap between the front substrate and the rear substrate cannot be made very large from the viewpoint of the characteristics of resolution and electron emission efficiency, and needs to be set to about 1 to 3 mm. Therefore, in the FED, it is inevitable that a strong electric field is formed in a small gap between the front substrate and the rear substrate, and a discharge (dielectric breakdown) between the two substrates becomes a problem. When the discharge occurs, destruction or deterioration of the electron-emitting device, the phosphor screen, and the driving circuit may occur. Therefore, in order to put the FED into practical use, it is necessary to make the discharge generation voltage sufficiently higher than the anode voltage during operation so that no discharge occurs during operation. Note that a voltage that can be applied without causing discharge is referred to as a withstand voltage.
As a measure against such discharge breakdown, for example, a technique described in Patent Document 1 has been proposed.
[0008]
[Patent Document 1]
JP 2000-251797 A
[Problems to be solved by the invention]
As described above, in the FED, measures against discharge are important. However, if the anode voltage is reduced or the gap between the front substrate and the rear substrate is increased in order to prevent discharge, the brightness, resolution, etc. The performance of the product must be sacrificed, and it is difficult to satisfy the performance desired as a product. Therefore, in order to realize a high-performance FED, a technique capable of increasing the withstand voltage is strongly desired.
[0010]
The present invention is intended to solve such a problem, and an object of the present invention is to provide a pressure-resistant processing method and a pressure-resistant processing apparatus for a substrate capable of performing a pressure-resistant process on a substrate and manufacturing an image display device having a high withstand voltage. To provide.
[0011]
[Means for Solving the Problems]
As a result of the investigation, it was found that a treatment for removing fine particles and the like serving as a discharge power source by applying an electric field to the substrate constituting the FED was effective as a measure against discharge. In this specification, a process for improving a breakdown voltage by applying an electric field to such a substrate is referred to as a breakdown voltage process, and the terms of the breakdown voltage processing method and the breakdown voltage processing device are used correspondingly. In addition, a process of applying an electric field is particularly referred to as an electric field process. The withstand voltage process is a series of processes whose main principle is electric field process. In this process, it is not always necessary to cause a discharge between the substrate and the facing surface. However, if the discharge is simply caused, the substrate is damaged. However, if the damage can be sufficiently reduced, the discharge may be caused.
[0012]
Although the pressure-resistant treatment is effective, there are various variations in the specific method, and an optimal method has not yet been established. In a method in which an opposing surface is simply provided on a substrate to apply an electric field, the effect that the removed discharge power collides with the opposing surface is a limitation of the effect. Therefore, it is conceivable to use a facing surface on which a plurality of elongated electrodes are arranged. In this case, the removed discharge power source passes through between the electrodes, so that the above-described problem can be avoided. In addition, when a discharge occurs during processing, the electrode capacity can be reduced, so that the discharge scale can be easily suppressed. However, when the elongated electrode is made to face the entire surface of the substrate, there is a problem in mechanical aspect. In addition, since the electric field varies depending on the location, there is a problem in securing uniformity of the effect.
[0013]
In view of the above, the method for processing pressure resistance of a substrate according to an embodiment of the present invention includes a method of: Relative to the substrate in a direction inclined with respect to, the entire surface of the substrate is scanned by the plurality of conductors, and during the relative movement, an electric field is applied by applying a potential difference between the substrate and the plurality of conductors. , Wherein the substrate is subjected to an electric field treatment.
[0014]
Further, the substrate pressure-resistant processing apparatus according to the aspect of the present invention is configured such that a plurality of elongated conductors arranged to face each other with a gap from the surface of the substrate are relatively moved in a direction inclined with respect to a longitudinal direction of each conductor. A moving mechanism that scans the entire surface of the substrate with the plurality of conductors, and a voltage applying unit that generates an electric field applied to the substrate are provided.
[0015]
According to the pressure-resistant processing method and the pressure-resistant processing apparatus for a substrate configured as described above, a plurality of elongated conductors and the substrate are opposed to each other with a gap therebetween, and the substrate and the substrate are moved while relatively moving these substrates and conductors. An electric field is applied between the conductor and the conductor, and the entire surface of the substrate is subjected to the electric field treatment. Since the longitudinal direction of each conductor is inclined with respect to the direction of relative movement, the entire surface of the substrate can be uniformly subjected to an electric field treatment, and the substrate can be efficiently subjected to a pressure resistance treatment. This makes it possible to remove foreign matter, protrusions, and the like remaining on the substrate, and to eliminate the cause of discharge. Therefore, by using the above substrate, it is possible to manufacture an image display device having excellent withstand voltage characteristics and improved display performance and reliability.
[0016]
In addition, the entire surface of the substrate can be uniformly subjected to an electric field treatment using a relatively short conductor and a relatively small number of conductors, so that it is possible to reduce the weight of the breakdown voltage processing device and simplify the drive system. It becomes.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, with reference to the drawings, a description will be given in detail of a substrate withstand voltage processing method and a withstand voltage processing apparatus according to an embodiment of the present invention.
First, an FED provided with a surface conduction type electron-emitting device will be described as an example of an image display device including a substrate processed by the pressure-resistant processing method and the pressure-resistant device.
[0018]
As shown in FIGS. 1 and 2, the FED includes a front substrate 11 and a rear substrate 12 each made of a rectangular glass plate having a thickness of about 1 to 3 mm as an insulating substrate. They are arranged facing each other with a gap of 2 mm. The front substrate 11 and the rear substrate 12 are joined to each other via a rectangular frame-shaped side wall 13 and have a flat rectangular vacuum envelope whose inside is maintained at a high vacuum of about 10 ⁻⁴ Pa. 10.
[0019]
The side wall 13 functioning as a bonding member is sealed to the peripheral portion of the front substrate 11 and the peripheral portion of the rear substrate 12 by a sealing material 25 such as a low-melting glass or a low-melting metal, for example. are doing.
[0020]
A plurality of spacers 14 are provided inside the vacuum envelope 10 to support an atmospheric pressure load applied to the front substrate 11 and the rear substrate 12. As the spacer 14, a plate-shaped or columnar spacer or the like can be used.
[0021]
In the display area on the inner surface of the front substrate 11, a rectangular phosphor screen 15 having phosphor layers 16 of red, green, and blue and a black light-shielding layer 17 in a matrix is formed as a phosphor screen. On the phosphor screen 15, a rectangular metal back 20 made of an aluminum film or the like is formed, and further, a getter film 22 is formed so as to overlap the metal back. The metal back 20 functions as an anode electrode.
[0022]
On the inner surface of the rear substrate 12, a large number of surface conduction electron-emitting devices 18 each emitting an electron beam are provided as electron sources for exciting the phosphor layer 16 of the phosphor screen 15. These electron-emitting devices 18 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. Each of the electron-emitting devices 18 includes an electron-emitting portion (not shown), a pair of device electrodes for applying a voltage to the electron-emitting portion, and the like. On the inner surface of the back substrate 12, a number of wirings 21 for supplying a potential to the electron-emitting devices 18 are provided in a matrix, and the ends of the wirings 21 are drawn out of the vacuum envelope 10.
[0023]
When an image is displayed in such an FED, an anode voltage is applied to the metal back 20, and the electron beam emitted from the electron-emitting device 18 is accelerated by the anode voltage to collide with the phosphor screen. Thereby, the phosphor layer 16 of the phosphor screen 15 is excited to emit light, and a color image is displayed.
[0024]
Next, a pressure-resistant processing method and a pressure-resistant processing apparatus for performing a pressure-resistant process on the front substrate and the rear substrate of the FED configured as described above will be described, taking the case of the front substrate 11 as an example. As shown in FIGS. 3 and 4, the pressure-resistant processing apparatus includes a vacuum chamber 30 formed of a vacuum processing tank, and an exhaust pump 32 for evacuating the inside of the vacuum chamber is connected to the vacuum chamber.
[0025]
In the vacuum chamber 30, the processing electrode 34, the getter device 36, and the front substrate 11 to be processed are transported between the electric field processing position facing the processing electrode 34 and the getter deposition position 40 facing the getter device 36. A substrate transport mechanism 42 is provided.
[0026]
The processing electrode 34 includes an elongated rectangular support frame 44 and a plurality of conductive wires 46 fixed to the support frame. The support frame 44 has a longer side longer than the shorter side of the front substrate 11 transported to the electric field processing position, and a shorter side shorter than the longer side of the front substrate. The support frame 44 is arranged horizontally and its long side is arranged in parallel with the short side of the front substrate 11. Further, the support frame 44 is arranged such that both ends in the longitudinal direction protrude to both sides beyond the long side of the front substrate 11.
[0027]
The plurality of wires 46 functioning as elongated conductors are fixed to the long sides of the support frame 44 at both ends in the longitudinal direction, and are bridged between these long sides. The wires 46 are arranged in parallel with each other with a predetermined gap therebetween, and face the surface of the front substrate 11 transported to the electric field processing position in parallel with a gap.
[0028]
A moving mechanism that supports the processing electrode 34 and moves the processing electrode relatively to the front substrate 11 transported to the electric field processing position is provided in the vacuum chamber 30. In the present embodiment, the moving mechanism has a pair of guide portions 48 extending along the direction X parallel to the long side of the front substrate 11 transported to the electric field processing position. The support frame 44 of the processing electrode 34 is movably supported at both ends in the longitudinal direction along the guide portion 48. Further, the moving mechanism includes a driving unit 50 that reciprocates the processing electrode 34 along the guide unit 48. Therefore, by operating the driving unit 50, the processing electrode 34 is relatively moved along the direction X parallel to the long side of the front substrate with respect to the front substrate 11 transported to the electric field processing position.
[0029]
On the other hand, as shown in FIGS. 4 and 5, the wire 46 of the processing electrode 34 extends obliquely with respect to the moving direction X of the processing electrode. Assuming that the length of each wire 46 in the longitudinal direction is L and the inclination angle of the wire with respect to the moving direction X of the processing electrode 34 is θ, the interval P between adjacent wires is set to P = Lsinθ. The wires 46 are provided in a number corresponding to the entire surface of the front substrate 11 in the short side direction.
[0030]
The wire 46 and the support frame 44 are connected to the ground potential. When a discharge occurs in one wire 46, the wires may be bound together via a high-resistance element in order to suppress discharge expansion due to a voltage drop in surrounding wires.
[0031]
Further, the pressure-resistant processing apparatus includes a power supply 52 that functions as a voltage application unit that applies a voltage between the processing surface of the substrate transported to the electric field processing position and the wires 46. The method of applying the potential is not limited to this, and it is sufficient that the electric field can be applied between the substrate and the processing electrode.
[0032]
As shown in FIG. 3, the getter device 36 includes a cover 54 opened toward the getter deposition position 40, a getter material 56 provided at the bottom in the cover, and a heating mechanism 58 for heating the getter material. As the heating mechanism 58, a high-frequency heating method or a resistance heating method can be used.
[0033]
Next, a method for processing a substrate by the above-described pressure-resistant processing apparatus will be described. First, the inside of the vacuum chamber 30 is evacuated to a desired degree of vacuum by the exhaust pump 32. Subsequently, the front substrate 11 is carried into the vacuum chamber 30 and set at the electric field processing position. At the electric field processing position, the front substrate 11 is arranged so that the surface on the metal back 20 side faces the processing electrode 34 with a desired gap, for example, a gap of about 2 mm. Further, the front substrate 11 is arranged in a state where its major axis direction coincides with the moving direction X of the processing electrode 34. Furthermore, the processing electrode 34 is moved to one end in the major axis direction of the front substrate 11, for example, to an initial position facing the surface of the left end.
[0034]
Next, the power supply 52 is connected to the processing surface of the front substrate 11, here the metal back 20, and a voltage is applied from the power supply 52 to the metal back. As a result, an electric field is generated between the metal back 20 of the front substrate 11 and each wire 46, and the surface area of the front substrate 11 facing the wires is subjected to the electric field treatment.
[0035]
After the electric field is generated, the driving unit 50 of the moving mechanism is driven, and the processing electrode 34 faces the metal back 20 of the front substrate 11 with a predetermined gap therebetween along the longitudinal direction of the front substrate. Move at a constant speed from the left end to the right end. As described above, the front substrate 11 and the processing electrode 34 are relatively moved, and the surface of the front substrate 11 is scanned by the wires 46 while the surface of the front substrate 11 is subjected to the electric field treatment.
[0036]
Thereafter, when the processing electrode 34 moves beyond the right edge of the front surface of the front substrate 11 and moves outside the front substrate, the processing electrode is stopped and the voltage application to the metal back 20 is stopped. Thus, the entire surface of the front substrate 11 can be subjected to an electric field treatment to remove foreign substances and the like remaining on the metal back 20.
[0037]
Then, after the electric field processing is completed, the front substrate 11 is moved from the electric field processing position to the getter deposition position 40 by the substrate transport mechanism 42. In this embodiment, the processing electrode 34 is configured to scan only one way from the left end to the right end of the surface of the front substrate 11, but the processing electrode 34 is reciprocated by the same method as described above, and the left end of the front substrate 11 is moved. Alternatively, it may be configured to stop after moving to the outside of the front substrate beyond. In this case, the front substrate 11 on which the electric field processing has been completed can be moved to the getter deposition position 40 without passing under the processing electrode 34.
[0038]
At the getter deposition position 40, the front substrate 11 faces the lower opening of the cover 54 of the getter device 36 with the surface on the metal back 20 side facing upward. In this state, the getter material 56 provided on the bottom of the cover 54 is heated and evaporated by the heating mechanism 58 to perform getter flash. Thus, a getter is deposited on the metal back 20 of the front substrate 11 to form a getter film 22.
[0039]
After the getter film 22 is formed, the front substrate 11 is transferred again from the getter deposition position 40 to the electric field processing position by the substrate transfer mechanism 42. Then, the front substrate 11 on which the getter film 22 is formed is subjected to an electric field treatment by the same process as described above.
[0040]
On the other hand, the entire surface of the rear substrate 12 on which the wirings 21 and the electron-emitting devices 18 and the like are formed is subjected to an electric field treatment by the same process as described above except for getter vapor deposition.
Then, the front substrate 11 and the rear substrate 12 that have been subjected to the electric field treatment are transported to a sealing position (not shown) while being maintained in a vacuum atmosphere without being exposed to the air, where they are sealed together to form a vacuum envelope 10. I do. The sealing of the substrate may be performed in the same vacuum chamber as in the above-described electric field treatment, or in another vacuum chamber communicating in a vacuum state.
[0041]
According to the pressure processing method and the pressure processing apparatus configured as described above, foreign substances such as dust adhering to the front substrate 11 and the rear substrate 12 and the front substrate and the rear substrate before being put into the vacuum chamber. Unnecessary protrusions and the like formed can be removed. Further, after these substrates are put into the vacuum chamber, foreign substances generated in the getter vapor deposition step and foreign substances adhering to the substrates such as floating substances in the vacuum chamber can be removed.
[0042]
Further, each wire 46 of the processing electrode 34 is provided to be inclined with respect to the moving direction of the processing electrode, that is, the direction of relative movement between the substrate and the wire. Therefore, electric field processing can be performed on each region of the substrate surface under the same conditions cumulatively using the relatively short length wires and the relatively small number of wires, and the entire surface of the substrate can be uniformly subjected to the electric field processing. In addition, since a foreign substance or the like removed from the substrate surface by the Coulomb force hardly collides with the processing electrode, a strong electric field can be applied without causing discharge, and contamination and deterioration of the opposing surface can be almost eliminated. it can. Furthermore, the weight of the processing electrode and the entire pressure-resistant processing apparatus can be reduced, and the drive system can be simplified with the reduction in the weight of the processing electrode.
[0043]
By the above-described breakdown voltage processing, the trigger of the occurrence of discharge is removed, and an FED with improved breakdown voltage can be obtained. Further, the anode potential can be set high, and an FED with high luminance and high display performance can be obtained.
[0044]
Next, a breakdown voltage processing apparatus according to another embodiment of the present invention will be described. As shown in FIG. 6, according to the second embodiment, the support frame 44 of the processing electrode 34 is provided such that its long side is parallel to the long side of the substrate to be processed. The processing electrode 34 is moved by a moving mechanism along a direction parallel to the short side of the substrate. Each wire 46 of the processing electrode 34 is provided to be inclined with respect to the moving direction of the processing electrode, that is, the direction parallel to the short side of the substrate.
[0045]
As shown in FIG. 7, according to the third embodiment, the support frame 44 of the processing electrode 34 is provided such that its long side is inclined with respect to the side of the substrate to be processed. The processing electrode 34 is moved by a moving mechanism along a direction parallel to one side of the substrate. Each wire 46 of the processing electrode 34 is provided perpendicular to the long side of the support frame 44, and is provided to be inclined with respect to the moving direction of the processing electrode, that is, the direction parallel to one side of the substrate. Have been.
[0046]
As shown in FIG. 8, according to the fourth embodiment, the support frame 44 of the processing electrode 34 is provided such that its long side is parallel to one side of the substrate to be processed. The processing electrode 34 is moved by the moving mechanism in a direction inclined with respect to one side of the substrate. Each wire 46 of the processing electrode 34 is provided perpendicular to the long side of the support frame 44 and is provided to be inclined with respect to the moving direction of the processing electrode.
[0047]
As shown in FIGS. 9 and 10, according to the fifth embodiment, the processing electrode 34 is provided with an elongated rectangular plate electrode 60 having conductivity instead of a wire as an elongated conductor. The plurality of plate electrodes 60 are arranged in parallel with each other with a predetermined gap. Each plate electrode 60 has both ends in the longitudinal direction fixed to the long sides of the support frame 44, and is provided between the long sides of the support frame. Each of the plate electrodes 60 is provided so that its longitudinal direction is inclined with respect to the moving direction of the processing electrode 34, and its width direction extends substantially perpendicular to the surface of the substrate to be processed.
[0048]
In the above-described second to fifth embodiments, the other configuration and the substrate withstand voltage processing method are the same as those in the above-described first embodiment. Detailed description is omitted. Also in the second to fifth embodiments, the entire surface of the substrate can be uniformly subjected to the pressure resistance treatment, and the same operation and effect as those of the first embodiment can be obtained.
[0049]
In addition, the present invention is not limited to the above-described embodiment, and can be variously modified within the scope of the present invention. For example, in the above-described embodiment, the processing electrode is moved with the substrate fixed, but the processing electrode and the substrate are relatively moved by fixing the processing electrode and moving the substrate. It is good also as composition which makes it do.
[0050]
In the above-described embodiment, both the front substrate and the rear substrate are subjected to the electric field treatment in a vacuum atmosphere. However, an image display device with improved withstand voltage can be obtained by subjecting at least one of the substrates to the electric field treatment. . In addition, it is preferable to apply a higher voltage in a vacuum and to perform processing consistent with sealing.However, it is not always necessary to be in a vacuum, and the processing should be performed in the atmosphere. However, we have confirmed that some effect can be expected.
[0051]
【The invention's effect】
As described in detail above, according to the present invention, a substrate can be uniformly subjected to withstand pressure processing while using an elongated electrode on the opposing surface, and a substrate withstand voltage processing method capable of manufacturing an image display device with high withstand voltage And a pressure treatment device.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an example of an FED provided with a substrate to be processed by a breakdown voltage processing method and a breakdown voltage processing apparatus according to an embodiment of the present invention.
FIG. 2 is a sectional view of the FED taken along line AA in FIG. 1;
FIG. 3 is a cross-sectional view schematically showing a substrate withstand voltage processing method and a withstand voltage processing apparatus according to the first embodiment of the present invention.
FIG. 4 is a plan view schematically showing a processing electrode and a moving mechanism of the pressure-resistant processing apparatus.
FIG. 5 is an enlarged plan view showing a part of the processing electrode.
FIG. 6 is a plan view schematically showing a processing electrode and a moving mechanism of a pressure-resistant processing device according to a second embodiment of the present invention.
FIG. 7 is a plan view schematically showing a processing electrode and a moving mechanism of a pressure-resistant processing apparatus according to a third embodiment of the present invention.
FIG. 8 is a plan view schematically showing a processing electrode and a moving mechanism of a pressure-resistant processing apparatus according to a fourth embodiment of the present invention.
FIG. 9 is a plan view schematically showing a processing electrode and a moving mechanism of a pressure-resistant processing apparatus according to a fifth embodiment of the present invention.
FIG. 10 is a perspective view schematically showing a flat electrode of the pressure-resistant processing apparatus according to the fifth embodiment.
[Explanation of symbols]
10: vacuum envelope, 11: front substrate, 12: rear substrate,
15: phosphor screen, 18: electron-emitting device,
20: metal back, 22: getter film, 30: vacuum chamber,
34: processing electrode, 38: getter device, 46: wire,
48: guide unit, 50: drive unit, 60: plate electrode

Claims (13)

In a substrate withstand voltage processing method for performing a withstand voltage process on a substrate used for an image display device,
With the plurality of elongated conductors and the surface of the substrate facing each other with a gap therebetween, the substrate and the plurality of conductors are relatively moved in a direction inclined with respect to the longitudinal direction of each conductor, and the surface of the substrate is The whole is scanned by the plurality of conductors,
During the relative movement, an electric field is applied by applying a potential difference between the substrate and the plurality of conductors, and the substrate is subjected to an electric field treatment. 2. The method according to claim 1, wherein the substrate is subjected to an electric field treatment in a vacuum atmosphere. 3. The withstand voltage processing method according to claim 1, wherein the plurality of elongated conductors are arranged in parallel with each other. 4. The pressure-resistant processing method according to claim 3, wherein scanning is performed with the conductor facing the surface of the substrate in parallel. In a pressure-resistant substrate processing apparatus for processing a substrate used in an image display device,
A plurality of elongated conductors arranged facing each other with a gap between the surface of the substrate,
A moving mechanism that relatively moves in a direction inclined with respect to the longitudinal direction of each conductor and scans the entire surface of the substrate with the plurality of conductors;
A voltage application unit for generating an electric field applied to the substrate,
A pressure-resistant processing apparatus for a substrate, comprising: A support frame supporting both ends in the longitudinal direction of each conductor is provided,
The said movement mechanism is provided with the guide part which guides the said support frame so that movement is possible along the direction of the said relative movement, and the drive part which moves the said support frame, The Claims characterized by the above-mentioned. Pressure treatment equipment for substrates. The guide portion extends along a direction parallel to one side of the substrate, and each of the conductors extends obliquely with respect to a direction parallel to one side of the substrate. A substrate pressure-resistant processing apparatus according to claim 6. 7. The device according to claim 6, wherein the guide portion extends along a direction inclined with respect to one side of the substrate, and each of the conductors extends in a direction whose longitudinal direction is parallel to one side of the substrate. 3. A pressure-resistant processing apparatus for a substrate according to claim 1. When the length along the longitudinal direction of each conductor is L, and the inclination angle of the conductor with respect to the direction of the relative movement is θ, the interval P between adjacent conductors satisfies the relationship of P = Lsinθ. The substrate withstand pressure processing apparatus according to any one of claims 5 to 8, wherein: 10. The apparatus according to claim 5, wherein each of the conductors is formed of a conductive wire. The apparatus according to any one of claims 5 to 9, wherein each of the conductors is formed of a conductive flat plate. 13. The apparatus according to claim 10, wherein the plurality of conductors are arranged in parallel with each other. The pressure-resistant processing apparatus for a substrate according to any one of claims 5 to 12, further comprising a vacuum chamber containing the substrate and a plurality of conductors.

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