JP2001210752A - High frequency semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high frequency semiconductor device which realizes the multi-chip mounting intended to reduce the number of parts and miniaturize the device and has good high frequency characteristics at a low manufacturing cost. SOLUTION: The high frequency semiconductor device is such that a plurality of mounting parts with electrode wirings 111-113, 121-123 to which electrodes of a plurality of high frequency circuit elements are electrically connected is provided on the upside of a dielectric board 1, high frequency semiconductor circuit elements 41, 42 are mounted on each mounting part to electrically connect their electrodes to the electrode wirings 111-113, 121-123, a dielectric cover 2 having a plurality of recesses 31, 32 corresponding to the mounting parts on the downside and connection wirings 201-203 formed between the recesses 31, 32 is mounted on the dielectric board 1 to house the high frequency semiconductor elements 41, 42 in the recesses 31, 32 every mounting part, and the electrode wirings 111-113, 121-123 between the mounting parts are mutually electrically connected through the connection wirings 201-203.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency semiconductor device comprising a plurality of high-frequency semiconductor circuit elements operating in a high-frequency band, and more particularly to a high-frequency semiconductor device having good high-frequency characteristics and easily replacing individual high-frequency semiconductor circuit elements. The present invention relates to a high-frequency semiconductor device capable of easily improving the non-defective rate of the entire device.

[0002]

2. Description of the Related Art In general, various high-frequency semiconductor circuit elements such as amplifiers, frequency converters, and oscillators are used in high-frequency semiconductor devices constituting a radio section in communication equipment, sensors, and the like. At high frequencies above the microwave band, especially at frequencies above the millimeter wave band, these semiconductor circuits include, for example, II such as gallium arsenide (GaAs).
Monolithic integrated circuit (M
Circuit elements having the form (MIC) are mainly used. Such a high-frequency semiconductor circuit element is used by being sealed in a semiconductor package for the purpose of protecting the circuit itself and facilitating the handling in the manufacturing process of the high-frequency device, or the radio section or the entire device is used. It is used by being mounted on a carrier substrate (external electric circuit substrate) in a sealed state.

Heretofore, in order to reduce the influence of the non-defective rate of a single high-frequency semiconductor circuit element on the non-defective rate of the entire high-frequency semiconductor device, a plurality of semiconductor circuit elements are mounted on a semiconductor package or a carrier substrate, respectively. After inspecting the characteristics of a single circuit element, it is necessary to assemble the entire high-frequency semiconductor device. In this case, if an inferior product is found in the inspection of each semiconductor circuit element, it is removed in the inspection process, so that there is obtained an advantage that only a good high-frequency semiconductor circuit element can be used for assembling the entire high-frequency semiconductor device. .

However, mounting each of the semiconductor circuit elements on a semiconductor package or a carrier substrate for the inspection of a single high-frequency semiconductor circuit element as described above increases the number of components and increases the overall number of high-frequency semiconductor devices. There is a problem that the size is increased.
In connection between semiconductor circuit elements, interconnection between a semiconductor circuit element and a semiconductor package or a carrier substrate, or interconnection between a semiconductor package or a carrier substrate, and a semiconductor package or a carrier substrate and a motherboard or a connection substrate in a device. Since the connection redundancy such as the interconnection between them occurs, there is also a problem that the high-frequency characteristics of the high-frequency semiconductor device are deteriorated.

[0005] For this reason, multi-chip mounting has recently been attempted in which a plurality of high-frequency semiconductor circuit elements are mounted on a single semiconductor package or carrier substrate to reduce the number of components, downsize the device, and improve high-frequency characteristics. Proposed. Such a mounting form is a mounting form which has been conventionally used when configuring a semiconductor device inside an information device such as a computer, but has recently been applied to a high-frequency semiconductor device inside a communication device.

On the other hand, a high-frequency semiconductor device constituting a radio section or the like of a communication device has a semiconductor circuit such as an oscillator and an amplifier as described above as a requirement of the device configuration. Among them, a high-frequency semiconductor device is used for generating a carrier wave. In order to avoid unnecessary high-frequency signal interference, the oscillator and its peripheral circuits are provided with a receiving circuit including a low-noise amplifier, a frequency converter and its peripheral circuits, and a transmission power amplifier, a frequency converter and its peripheral circuits. In many cases, it is configured to be electrically isolated from the transmission system circuit part composed of Therefore, it is desirable that the entire high-frequency semiconductor device has a structure in which the receiving circuit portion, the transmitting circuit portion, and the oscillation circuit portion are housed in independent housing structures.

In the above-described high-frequency semiconductor device, when a multi-chip mounting is performed for the purpose of reducing the number of components, miniaturizing the device, and improving high-frequency characteristics, a structure in which a plurality of high-frequency semiconductor circuit elements can be mounted. It is necessary to realize a semiconductor package or a carrier substrate having a plurality of housing structures capable of electrically isolating the receiving circuit portion, the transmitting circuit portion, and the oscillation circuit portion as described above. .

As a conventional example of such a structure, a plurality of frames made of an iron-nickel-cobalt alloy or the like are joined on a metal base such as an iron-nickel-cobalt alloy by a silver brazing or the like to form a radio circuit. A notch is provided in a part of the frame in order to realize the connection according to the above, and an input / output connection component having a microstrip line / strip line / microstrip line conversion structure is fitted into the notch. -There is a so-called metal wall package having a structure in which it is bonded.

In such a multi-chip package using a metal wall package, each semiconductor circuit element is individually evaluated individually, and only a semiconductor circuit element that has been confirmed to be a good product is used, and the semiconductor circuit element is made of gold tin or the like. By connecting the electrodes of the semiconductor circuit element to the input / output connection components directly or via the line board with the gold ribbon or gold wire, etc., the electrical connection with the outside of the frame is realized. It has a structure to do.

[0010]

However, the metal wall package as described above has a structure in which an input / output connection component is fitted and adhered to a notch provided in a frame, so that it is airtight. In order to guarantee the performance and to realize good high-frequency characteristics, there is a problem that high working accuracy is required and manufacturing becomes difficult. In addition, there is also a problem that parts which can be used particularly in a high frequency band such as a millimeter wave have a low non-defective product rate in manufacturing, and thus generally increase manufacturing costs.

The present invention has been made in view of the above-mentioned problems in the prior art, and has as its object to realize a desired high-frequency semiconductor while realizing a multi-chip mounting for the purpose of reducing the number of components and miniaturizing the device. It is an object of the present invention to provide a high-frequency semiconductor device that achieves good high-frequency characteristics by electrically isolating circuit elements from each other and that can keep manufacturing costs low.

[0012]

According to the high frequency semiconductor device of the present invention, a plurality of mounting portions are provided on an upper surface of a dielectric substrate, on which electrode wirings for electrically connecting a plurality of high frequency semiconductor circuit elements are formed. Mounting a high-frequency semiconductor circuit element on each mounting portion and electrically connecting its electrode to the electrode wiring,
On the dielectric substrate, a plurality of concave portions corresponding to the mounting portions are provided on the lower surface, and a dielectric lid body in which connection wiring is formed between the concave portions is attached, and each mounting portion is provided in the concave portion. The high-frequency semiconductor circuit element is accommodated, and the electrode wires between the mounting portions are electrically connected to each other by the connection wires.

[0013]

According to the high-frequency semiconductor device of the present invention, the inspection by evaluating the characteristics of each of the high-frequency semiconductor circuit elements according to the above configuration is performed in a state where the high-frequency semiconductor circuit elements are mounted on the dielectric substrate. Of the high-frequency semiconductor device by mounting the dielectric cover on the dielectric substrate after confirming that each mounted high-frequency semiconductor circuit element is non-defective. Can be completed as At this time, an area for connection with a connection wiring provided at an end of an electrode wiring electrically connected to an electrode of each high-frequency semiconductor circuit element housed in a recess formed in the dielectric cover, A connection area for connection with an electrode wiring provided at an end of a connection wiring for electrically connecting between recesses formed on the lower surface of the body lid is electrically connected to the connection wiring with a conductive adhesive or the like. By doing so, an electrical connection between each high-frequency semiconductor circuit element housed in the recess is realized to constitute a high-frequency circuit, and, for example, an oscillation circuit
By housing the receiving system circuit, the transmitting system circuit, and the like in the concave portion for each mounting portion, it becomes possible to electrically isolate them. As a result, the number of parts can be reduced and the size of the device can be reduced compared to the case where a metal wall package that uses a high-frequency band such as a millimeter wave can be used, and the manufacturing cost is high. While realizing multi-chip mounting for the purpose, electrically isolate desired high-frequency semiconductor circuit elements to achieve good high-frequency characteristics,
In addition, a high-frequency semiconductor device that can reduce the manufacturing cost can be provided.

Hereinafter, a high-frequency semiconductor device of the present invention will be described in detail with reference to the drawings.

FIG. 1 is an exploded perspective view showing a schematic configuration of an embodiment of the high-frequency semiconductor device according to the present invention. In FIG. 1, reference numeral 1 denotes a dielectric substrate, and reference numerals 41 and 42 denote high frequency semiconductor circuit elements mounted and mounted on a mounting portion provided on the upper surface of the dielectric substrate 1. The input / output electrodes (not shown) of each of the plurality of high-frequency semiconductor circuit elements 41 and 42 have the same signal conductor on the lower surface of the element and ground conductors on both sides of the signal conductor on the lower surface of the element so that evaluation by a wafer probe can be performed. It has the form of a coplanar line formed on a plane.

[0016] 101-103.111-113.121-123.131-133
Are electrode wirings formed on the mounting portion on the upper surface of the dielectric substrate 1 and electrically connected to the electrodes of the high-frequency semiconductor circuit elements 41 and 42, respectively. Here, signal electrodes formed as high-frequency line conductors correspond to the electrodes of high-frequency semiconductor circuit elements 41 and 42 in the form of coplanar lines.
101 ・ 111 ・ 121 ・ 131 and grounding electrodes 102 ・ 103 ・ on both sides
112, 113, 122, 123, 132 and 133 are formed. These signal electrodes 101, 111 and 111 formed on the dielectric substrate 1.
121 ・ 131 and ground electrode 102 ・ 103 ・ 112 ・ 113 ・ 122 ・ 1
The characteristic impedance of the coplanar line constituted by 23, 132 and 133 is determined by the thickness and relative permittivity of the dielectric substrate 1, the width of the signal electrode, and the distance between the signal electrode and the ground electrode. Normally, the value is determined so as to match the characteristic impedance of the input / output electrodes of the high-frequency semiconductor circuit elements 41 and 42.

In the mounting portion on the upper surface of the dielectric substrate 1, the high-frequency semiconductor circuit elements 41 and 42 may be mounted on the same surface as the substrate surface, or may be mounted in a recess formed on the upper surface of the substrate. Good. In addition, the high-frequency semiconductor circuit element 41
・ 42 and each electrode wiring 101 ~ 103 ・ 111 ~ 113 ・ 121 ~ 123 ・ 131
The electrical connection with -133 may be made by wire bonding, or by a so-called flip-chip mounting method.

Reference numeral 2 denotes a dielectric cover, and 31 and 32 denote recesses 31 provided on the lower surface of the dielectric cover 2 and having openings on the lower surface.
・ It is 32. The plurality of recesses 31 and 32 are
Each high-frequency semiconductor circuit element 41
In a state where the dielectric lid 2 is mounted on the dielectric substrate 1 after mounting the high frequency semiconductor circuit elements 41 and 42 therein, each mounting portion is formed in a position and a size for accommodating therein. .

Reference numerals 201 to 203 denote recesses 31 on the lower surface of the dielectric cover 2.
This is a connection wiring formed between 32. These connection wiring 201
-203 are mounting parts 31 and 32 whose both ends are respectively at both ends.
Are formed as high-frequency line conductors at positions electrically connected to the respective electrode wirings 111 to 113 and 121 to 123 and electrically connecting the electrode wirings 111 to 113 and 121 to 123 between the mounting portions. I have. Here, the electrode wiring in the form of a coplanar line
A signal electrode 201 as a high-frequency line conductor and ground electrodes 202 and 203 are formed corresponding to 111 to 113 and 121 to 123. As a result, the dielectric cover 2 is
2, the signal electrodes 111 and 121 of the electrode wiring formed on the dielectric substrate 1 and the ground electrodes 112, 122, 113, and 123, as shown in the perspective view of the main part in FIG.
Are the signal electrodes 201 and the ground electrodes 202 and 20 of the connection wiring.
3 are electrically connected by being brought into contact with each other. Each of these contact portions may be used in combination with solder, a conductive adhesive or the like in order to further secure the electrical connection.

In this example, illustration of other connection wirings to which the electrode wirings 101 to 103 and 131 to 133 are electrically connected or connection to an external electric circuit board is omitted.

According to the above configuration, the dielectric cover 2
Before mounting, the electrode wiring formed on each mounting portion on the dielectric substrate 1, that is, the signal electrodes 111 and 1
21, the grounding electrodes 112 and 122, and 113 and 123 are separated from each other, and by connecting a set of these electrodes by a wafer probe, each high-frequency semiconductor circuit element 41. 42 can be evaluated independently for each mounting unit. When the dielectric lid 2 is attached to the dielectric substrate 1 after the high-frequency semiconductor circuit elements 41 and 42 have been evaluated and confirmed to be non-defective,
The connection wires formed on the dielectric cover 2, that is, the signal electrodes 201 and the grounding electrodes 202 and 203 allow the electrode wires between the mounting portions on the dielectric substrate 1, that is, the signal electrodes 111.
, 121, and the grounding electrodes 112, 122, 113, and 123 are electrically connected. At this time, the relative permittivity of the dielectric cover 2, the thickness of portions other than the concave portions 31 and 32, the width of the signal electrode 201, and the distance between the signal electrode 201 and the ground electrodes 202 and 203 are determined by the dielectric cover. 2 is attached to the dielectric substrate 1, the characteristic impedance of the coplanar line constituted by the signal electrodes 111 and 121 and the ground electrodes 112, 122, 113 and 123 formed on the dielectric substrate 1. By determining the respective values so as to match, the high-frequency semiconductor circuit elements 41 and 42 are electrically isolated between the mounting portions, and a good high-frequency transmission characteristic is realized in the interconnection between them. It becomes possible.

In the high-frequency semiconductor device of the present invention, the dielectric substrate 1 can use various dielectric materials conventionally used for semiconductor packages, carrier substrates, and the like. Specific dielectrics include, for example, various ceramics and glass ceramics including aluminum oxide sintered bodies and aluminum nitride sintered bodies, or
Organic resin-based dielectrics such as PTFE, glass epoxy, and polyimide can be used. In particular, when a material that can be hermetically sealed, such as a ceramic such as an aluminum oxide sintered body or an aluminum nitride sintered body, is used, a similar material is used for the lid, so that the high-frequency semiconductor circuit element can be used. And can be airtightly sealed well.

The mounting portion and the electrode wirings 101 to 103
111-113, 121-123, 131-133 may be configured according to the mounting form of the mounted high-frequency semiconductor circuit elements 41, 42. For example, when a high-frequency semiconductor circuit element and an external circuit are connected to each other by using a wire bonding technique, a die-attach pattern is formed on the surface of the dielectric substrate 1 and the high-frequency semiconductor to be mounted is mounted. Circuit element
A signal electrode and a ground electrode may be provided at positions corresponding to the input / output electrodes 41 and 42. If flip-chip technology is used to connect the high-frequency semiconductor circuit elements 41 and 42 and external circuits to each other, the input / output electrodes of the high-frequency semiconductor circuit elements 41 and 42 to be mounted are supported. The signal electrode and the ground electrode may be provided at the positions where the signals are to be formed.

The dielectric cover 2 may be made of a dielectric material or the like that can be manufactured by a lamination method in order to provide a concave portion. As a specific dielectric, similar to the dielectric substrate 1, for example, aluminum oxide is used. Various ceramics and glass ceramics, such as a porous sintered body and an aluminum nitride-based sintered body, or the above-described organic resin-based dielectric material can be used. Above all, when a material capable of hermetically sealing such as ceramics such as an aluminum oxide sintered body or an aluminum nitride sintered body is used, as described above, the high frequency semiconductor circuit element is accommodated and good air sealing is performed. Can be realized. Further, if a dielectric material having a dielectric constant lower than that of the dielectric material used for the dielectric substrate 1 is used, the electrode wiring before and after the dielectric cover 2 is attached to the dielectric substrate 1 is formed. This also has the effect of suppressing the change in impedance at

A concave portion formed on the lower surface of the dielectric cover 2
31 and 32 are provided at positions where the high-frequency semiconductor circuit elements 41 and 42 can be accommodated when the dielectric cover 2 is attached to the dielectric substrate 1, and the size is determined by the volume of the high-frequency semiconductor circuit elements 41 and 42 to be accommodated. It is sufficient if it is large, but it should be as small as possible so that unnecessary resonance or the like does not occur in the space formed by the concave portions 31 and 32 of the dielectric cover 2 and the surface of the dielectric substrate 1 after the dielectric cover 2 is attached. It is desirable to set. Further, a through conductor such as a via hole is disposed around the concave portions 31 and 32 in the dielectric cover 2 so as to surround the through conductor at a sufficiently small interval with respect to the guide wavelength corresponding to the operating frequency. A recess that accommodates the high-frequency semiconductor circuit elements 41 and 42 by forming a conductor that is electrically connected to the via hole and also to the ground of the semiconductor device on the surface of the
It is possible to provide 31 and 32 electromagnetic shielding effects.

For forming the recesses 31 and 32, for example, in the case of ceramics, a layer provided with a hollow portion by punching or laser processing at the stage of a so-called green sheet before firing may be laminated. Further, in the case of an organic resin material, the concave portions 31 and 32 can be formed by laminating a layer provided with a hollow portion or by using a chemical process such as etching.

The connection wirings 201 to 203 may have the same line width and the same distance between the electrode wirings as described above. The shorter the wiring length, the better, but the wiring length is the distance between the recesses 31 and 32. Therefore, the length may be reduced as long as the mechanical strength of the dielectric cover 2 does not deteriorate.

[0028]

Next, a specific example of the high-frequency semiconductor device of the present invention will be described.

On the upper surface of a dielectric substrate 1 made of alumina ceramic having a thickness of 0.2 mm and a relative dielectric constant of 8.8, two mounting portions for high-frequency semiconductor circuit elements are provided, each having a width of 0.13 m.
m signal electrodes 111 and 121 are formed, and a ground electrode 112 having a width of 0.2 mm is provided on both sides thereof at an interval of 0.065 mm.
By forming 113, 122 and 123, an electrode wiring in the form of a coplanar line was produced. At this time, the characteristic impedance of the coplanar line was set to about 50 ohms.

A concave portion for accommodating a high-frequency semiconductor circuit element corresponding to the mounting portion of the dielectric substrate 1 is formed on the lower surface of the dielectric cover 2 made of a glass ceramic substrate having a thickness of 1.0 mm and a relative dielectric constant of 4.9. Then, a signal electrode 201 having a width of 0.17 mm is formed between the recesses, and on both sides thereof,
Ground electrodes 202 and 203 having a width of 0.2 mm were formed at intervals of 0.05 mm.

Then, the dielectric cover 2 is attached to the dielectric substrate 1
The concave portion and the mounting portion are attached so as to correspond to each other, and the dielectric cover 2 is mounted.
Signal electrode 201 and ground electrode 202
A portion where each end of 203 and each end of signal electrodes 101/111 and ground electrodes 112/113/122/123 formed on the upper surface of the dielectric substrate 1 are bonded by soldering and mounted. A transmission line structure in the high-frequency semiconductor device of the present invention was formed in which the electrode wirings between the sections were electrically connected by connection wirings.

The transmission characteristics of the high-frequency signal in this transmission line structure were measured using a network analyzer. The results are shown diagrammatically in FIG. In FIG. 3, the horizontal axis represents frequency (unit: GHz), and the vertical axis represents logarithmic values (unit: dB) of the absolute values of the S parameters S11 and S21.
In the characteristic curve, the broken line indicates the frequency characteristic of S11, and the solid line indicates S21.
2 shows the frequency characteristics of FIG. As can be seen from this result, the reflection coefficient S11 is kept low over a wide band, while it has an extremely good transmission characteristic as shown by the characteristic curve of S21 showing the pass characteristic.

Further, regarding the state of electrical isolation between the mounting portions of the structure sealed by the corresponding recesses 31 and 32, the recesses 31 and 32 in which the transmission circuit portion and the oscillation circuit portion are arranged close to each other. Each high-frequency semiconductor circuit element was operated in a state where they were housed in a close proximity to each other.Since each high-frequency semiconductor circuit element operated normally and also functioned normally as a transmitter, the Has been confirmed to be electrically well separated by the concave portions 31 and 32. As a result, it was possible to arrange the mounting portions close to each other on the dielectric substrate 1, and it was confirmed that the high-frequency semiconductor device could be further reduced in size.

It should be noted that the above is only an example of the embodiment of the present invention, and the present invention is not limited to the embodiment. Various changes and improvements may be made without departing from the gist of the present invention. No problem. For example, in the above example, an example is shown in which one high-frequency semiconductor circuit element is mounted and mounted in each mounting portion and each recess,
It goes without saying that a plurality of high-frequency semiconductor circuit elements may be mounted, mounted, and accommodated according to the specifications of the high-frequency circuit.

[0035]

As described above, according to the high-frequency semiconductor device of the present invention, a plurality of mounts are formed on the upper surface of the dielectric substrate, in which electrode wirings for electrically connecting the electrodes of the plurality of high-frequency semiconductor circuit elements are formed. The high frequency semiconductor circuit element is mounted on each of the mounting portions, and its electrodes are electrically connected to the electrode wiring. On the dielectric substrate, a plurality of concave portions corresponding to the mounting portion are provided on the lower surface, and A dielectric lid having connection wiring formed between the recesses was attached, the high-frequency semiconductor circuit element was accommodated in the recess for each mounting portion, and the electrode wires between the mounting portions were electrically connected by connection wiring. Therefore, it has the following advantageous effects.

First, an inspection based on the characteristic evaluation of each high-frequency semiconductor circuit element is performed at a stage before the dielectric cover is mounted in a state where the high-frequency semiconductor circuit element is mounted on the dielectric substrate. After confirming that each of the high-frequency semiconductor circuit elements is non-defective, the dielectric cover is mounted on the dielectric substrate to complete the high-frequency semiconductor device.

Further, electrode wirings electrically connected to the electrodes of the respective high-frequency semiconductor circuit elements housed in the recesses formed in the dielectric cover are formed on the lower surface of the dielectric cover between the mounting portions. The electrical connection between the high-frequency semiconductor circuit elements accommodated in the concave portion is realized by electrically connecting the recessed portions to each other by a connection wiring for electrical connection, and a high-frequency circuit is configured, and Thus, it is possible to satisfactorily electrically isolate the mounting portions, that is, the concave portions.

Therefore, as compared with a conventional high-frequency semiconductor device using a multi-chip package or the like, it is possible to realize a multi-chip mounting for the purpose of reducing the number of components and miniaturizing the device, and at the same time, to obtain a desired high-frequency semiconductor circuit element. And a high-frequency semiconductor device capable of realizing good high-frequency characteristics by electrically isolating the semiconductor device and keeping the manufacturing cost low.

In addition, since the sealing of the high-frequency semiconductor circuit elements for each mounting portion and the electrical connection between the high-frequency semiconductor circuits can be performed simultaneously by attaching the dielectric cover, there are advantageous production effects such as reduction in the number of assembly steps. Is also provided.

[Brief description of the drawings]

FIG. 1 is an exploded perspective view showing a schematic configuration of an example of an embodiment of a high-frequency semiconductor device of the present invention.

FIG. 2 is a perspective view of an essential part showing a state where a dielectric cover is attached to a dielectric substrate in the high-frequency semiconductor device shown in FIG. 1;

FIG. 3 is a diagram showing a reflection characteristic and a transmission characteristic of a transmission line structure by an electrode wiring and a connection wiring in the high-frequency semiconductor device of the present invention.

[Explanation of symbols]

1 ... dielectric substrate 101, 111, 121, 131 ... signal electrode (electrode Wiring) 102, 103, 112, 113, 122, 123, 132, 133: ground electrode (electrode wiring) 2 ... dielectric Body lid 31, 32 ... Recess 201 ... For signal Electrodes (connection wiring) 202, 203 ············ Grounding electrodes (connection wiring) 41, 42 ・ ・ ・..... High frequency semiconductor circuit elements

Claims (1)

[Claims] 1. A plurality of mounting portions provided with electrode wirings to which electrodes of a plurality of high-frequency semiconductor circuit elements are electrically connected are provided on an upper surface of a dielectric substrate, and the high-frequency semiconductor circuit devices are mounted on the respective mounting portions. And electrically connecting the electrodes to the electrode wirings, forming a plurality of recesses on the dielectric substrate corresponding to the mounting portion on the lower surface, and forming connection wirings between the recesses. Wherein the high-frequency semiconductor circuit element is accommodated in the recess for each of the mounting portions, and the electrode wires between the mounting portions are electrically connected to each other by the connection wires. apparatus.