JP2001203140A - Stage device, aligner and device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an aligner which can realize high throughput and accurate exposure. SOLUTION: Tables TB1 and TB2 can be transferred by transfer systems 80A and 80B. The tables TB1 and TB2 can be supported, so that they can freely be attached/detached to/from the stage main bodies ST1 and ST2 without making contact and the tables can be driven with respect to the stage main bodies in a supported state. While a wafer on the table supported on the stage main body ST1 is exposed via a projection optical system PL, a wafer on the other table is aligned by an alignment system ALG. When exposure is terminated, the table holding the exposed wafer is transferred from the stage main body ST1 by the transfer system. The table holding the wafer after alignment is carried onto the stage main body ST1, and the exposure of the wafer is started immediately. The stage main bodies ST1 and ST2 are installed on different bases, and they do not mutually causes vibrations.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stage apparatus, an exposure apparatus, and a device manufacturing method, and more particularly, to a stage apparatus having a stage in which a table on which an object is placed and a stage body can be separated, and the stage. The present invention relates to an exposure apparatus that includes an apparatus as a substrate driving apparatus and exposes a substrate, and a device manufacturing method using the exposure apparatus.

[0002]

2. Description of the Related Art Conventionally, when a semiconductor element (integrated circuit) or a liquid crystal display element is manufactured by a lithography process,
Various exposure apparatuses are used. In recent years, with the increase in the degree of integration of semiconductor elements, a step-and-repeat type reduction projection exposure apparatus (so-called stepper) or a step-and-scan type scanning projection exposure apparatus (an so-called step-and-scan type) which is an improvement on this stepper has been developed. Sequentially moving projection exposure apparatuses such as a scanning stepper) have become mainstream.

[0003] This type of projection exposure apparatus is mainly used as a mass production machine for semiconductor elements and the like.
It is inevitably required to improve the processing capability, that is, the throughput, of how many wafers can be subjected to exposure processing within a certain time.

[0004] The flow of processing in this type of projection exposure apparatus is roughly as follows. a. First, a wafer loading step of loading a wafer on a wafer table using a wafer loader is performed. b. Next, a search alignment step of roughly detecting the position of the wafer by the search alignment mechanism is performed. This search alignment process is, specifically,
For example, it is performed based on the outer shape of the wafer or by detecting a search alignment mark on the wafer. c. Next, a fine alignment step for accurately determining the position of each shot area on the wafer is performed. In this fine alignment process, an EGA (Enhanced Global Alignment) method is generally used. In this method, a plurality of sample shots in a wafer are selected, and an alignment mark (wafer mark) attached to the sample shot is selected. Are sequentially measured, and based on the measurement result and the design value of the shot array, a statistical operation is performed by a so-called least squares method or the like to obtain all shot array data on the wafer (Japanese Patent Application Laid-Open No. 61-1986). -4
4429), and the coordinate position of each shot area can be obtained with relatively high accuracy at high throughput. d. Next, while sequentially positioning each shot area on the wafer at the exposure position based on the coordinate position of each shot area obtained by the above-described EGA method and the base line amount measured in advance, the reticle is projected through the projection optical system. An exposure step is performed to transfer the pattern image onto the wafer. e. Next, a wafer unloading step of unloading the exposed wafer on the wafer table using a wafer unloader is performed. In the wafer unloading step, the a. At the same time as the wafer loading step. That is, a. And e.
This constitutes a wafer exchange step.

As described above, in the conventional projection exposure apparatus, three major operations such as wafer exchange → alignment (search alignment, fine alignment) → exposure → wafer exchange are repeatedly performed using one wafer stage. Have been.

Accordingly, if a plurality of operations among the above-mentioned three operations, ie, wafer exchange, alignment, and exposure operations, can be processed at the same time even partially even in parallel, compared to a case where these operations are performed sequentially. Throughput can be improved. However, exposure is not performed during wafer exchange and alignment.In order to shorten the process time, that is, to improve throughput, for example, the stage for wafer exchange and alignment and the stage for exposure are simultaneously and independently controlled. There is a way to do it.

In view of the above, a large number of multi-stage techniques have been proposed to improve the throughput by simultaneously preparing a plurality of stages and performing wafer exchange and alignment on the other stage while exposing the wafer on one stage. (For example, JP-A-8-51069,
WO98 / 24115 etc.).

[0008]

On the other hand, in a next-generation exposure apparatus, the use of an F ₂ laser having an oscillation wavelength of 157 nm or a vacuum ultraviolet laser light source having a shorter wavelength than that has been studied as an exposure light source. In an exposure apparatus employing these light sources for exposure, it is highly possible to employ a catadioptric system as the projection optical system. Since the catadioptric system has a large diameter at the bottom, the distance between the exposure unit and the alignment unit or the wafer exchange unit is inevitably longer than that of a conventional exposure apparatus that employs a refraction system. For this reason, if a method similar to the conventional exposure apparatus that sequentially performs each operation of wafer exchange, alignment, and exposure is adopted, from the end of exposure of one wafer to the start of exposure of the next wafer. Time is inevitably increased, and the throughput is significantly reduced. Therefore, the necessity of employing a plurality of stages is higher than before.

However, the conventional exposure apparatus having a plurality of stages employs a method of arranging a plurality of stage movable parts on one stage base, so that the stage base becomes large. And, during alignment on one stage, the alignment accuracy is reduced due to vibration caused by the operation of the other stage during the exposure operation, or conversely, the operation of the other stage on which the alignment is being performed is the exposure operation There is a possibility that the position controllability of one of the two stages will be adversely affected and the exposure accuracy will be reduced.

In order to improve such a situation, it is most effective to separate a plurality of tables holding wafers from each other with respect to vibration. As one such technique,
It is conceivable that the wafer stage is divided into two parts, a wafer table holding a wafer and a stage main body supporting the table, and alignment and exposure are performed at different places. In this way, while the exposure on the wafer on one table is being performed,
Wafer alignment is performed on a wafer on another table in advance. When the exposure of the wafer on the one wafer table is completed, the one wafer table is unloaded from the stage main body, and another wafer table holding the aligned wafer is loaded onto the stage main body. Thus, the exposure can be started immediately.

However, it is not practical to simply separate the stage into two parts. The reason is that, usually, in the stage of the exposure apparatus, it is necessary to adjust the position and orientation of the wafer table in order to make the wafer coincide with the image forming plane of the projection optical system. This is because it becomes difficult to control the position and orientation of the table. Further, when the wafer stage is separated into two parts, a wafer table for holding a wafer and a stage main body for supporting the table, it is necessary to integrate the wafer table with the wafer stage prior to exposure. It is not easy to integrate them in a state where the positional relationship between them is set to a desired positional relationship. Furthermore, at the time of integration,
The wafer on the wafer table may be displaced by the impact.

The present invention has been made under such circumstances, and a first object of the present invention is to provide a novel stage apparatus which contributes to the realization of a next-generation exposure apparatus capable of performing high-throughput and high-accuracy exposure. To provide.

Another object of the present invention is to provide an exposure apparatus capable of improving both throughput and exposure accuracy.

It is a third object of the present invention to provide a device manufacturing method capable of improving the productivity of a highly integrated device.

[0015]

According to a first aspect of the present invention, there is provided a stage device for driving an object, comprising: a movable first stage main body (ST1); A first table (TB1) detachably supported by the first stage main body; a first stator (92A to 92D, 100) provided on the first stage main body; and a first table (TB1) provided on the first table. A driving device (91A) that has first stators (94A to 94D, 106) cooperable with one stator and drives the first table with respect to the first stage body;

Here, "cooperation" means that some physical interaction (including, for example, electromagnetic interaction) for driving the first table with respect to the first stage main body is performed with the first stator and the first stator. This means that it is performed with one mover. In this specification, the term "cooperation" is used as a generic term when any physical interaction such as generating a driving force is performed between the stator and the moving element.

According to this, when the first table holding the object is supported by the first stage main body, the first table can be driven relative to the first stage main body by the driving device. is there. Thus, after the first table is supported by the first stage main body, the positional relationship between the two can be adjusted to a desired positional relationship. Also,
By moving the first table relative to the first stage main body in a predetermined direction by a driving device while moving the first table integrally with the first stage main body, the first table is moved.
The position and orientation of the table can be controlled.

Therefore, the relative positional relationship between the first table and the first stage main body can be adjusted even though the first table and the first stage main body are detachable (separable). For example, the stage apparatus according to the present invention is adopted as a substrate stage of an exposure apparatus, and
By preparing one, for example, it is possible to replace the board together with the table. Thus, for example, while the exposure is being performed on one of the first tables, the substrate is exchanged and aligned on the other table, and the alignment is terminated after the exposure on the substrate on the first table is completed. It is possible to start exposure to the substrate on the other first table. As a result, it is possible to take a step forward in realizing a next-generation exposure apparatus capable of performing high-throughput and high-accuracy exposure.

Here, "the first table is" removably supported "by the first stage body"
It is only necessary that the first table is detachable from the stage body, that is, it is separable, and includes both the case where the first table is supported in contact with the first stage body and the case where it is supported in a non-contact manner.

Therefore, in the stage device according to the first aspect of the present invention, as in the second aspect of the present invention, the driving device supports the first table on the first stage main body in a non-contact manner. It may be something. In such a case, when transferring and supporting the first table with respect to the first stage main body, since there is almost no impact force accompanying the transfer, it is also necessary to prevent the displacement of the object on the first table at that time. Can be.

In the stage apparatus according to each of the first and second aspects of the present invention, as in the third aspect of the present invention,
The driving device may finely drive the first table in a tilt direction with respect to a moving surface of the first stage main body and in a direction orthogonal to the moving surface. That is,
It may have a so-called Z-tilt drive function. In such a case, it is not necessary to separately provide a Z-tilt (leveling) mechanism.

In the stage apparatus according to any one of the first to third aspects of the present invention, as in the fourth aspect of the present invention, the driving device may move the first table in a moving plane of the first stage main body. It may be a device that minutely drives in a predetermined direction. In such a case, even if the first table is supported by the first stage body in a rough positioning state, the position can be adjusted thereafter, so that the first table is required for delivery when the first table is supported by the first stage body. Time can be reduced.

In the stage apparatus according to each of the first to fourth aspects of the present invention, as in the fifth aspect of the present invention, the object (W2) can be held and detachably supported on the first stage main body. And second movers (94E to 94H, which can cooperate with the first stator instead of the first mover).
118) having a second table (TB2);
A transport system (19) for transporting the table and the second table
0) may be further provided. In such a case, for example, when there is no table on the first stage body,
The second table holding the object by the transfer system can be transferred and supported on the first stage main body. Further, when the second table holding the object is supported by the first stage main body, the second table cooperates with the first stator to move the second table relative to the first stage main body. Can be driven. In this case, after the second table is supported by the first stage main body, the positional relationship between the two can be adjusted to a desired positional relationship.
Further, while moving the second table integrally with the first stage main body, the second table is moved relative to the first stage main body in a predetermined direction by cooperation of the second mover and the first stator. By driving, the position and orientation of the second table can be controlled. Therefore, for example, the first table and the second table are alternately supported with respect to the first stage main body by the transport system, and each table is moved integrally with the first stage main body while the table and the second table are moved together. Adjustment of the relative position with respect to the one-stage main body can be performed.

[0024] While the processing is being performed on the object on one of the first table and the second table supported on the first stage main body, the transport system includes:
The other table can be transported to another location, and a predetermined process can be performed on an object placed on the other table. Alternatively, when the object is not placed on the other table, predetermined processing can be performed on the placed object at the stage when the object is placed on the table. In any case, even if different processes are performed simultaneously on the two objects placed on the first and second tables, respectively, it is possible to prevent the operation of one table from adversely affecting the other table. be able to.

Therefore, when the stage apparatus according to the fifth aspect of the present invention is employed in an exposure apparatus, simultaneous parallel processing of exposure and substrate exchange / alignment for an object (eg, substrate) on two tables can be performed on one of the tables. The operation of the table can be executed while eliminating an adverse effect on the object on the other table.

In this case, as in the invention according to claim 6, the transport system can drive the table to be transported at least two-dimensionally in a plane parallel to the moving surface. good. In such a case, as described above, while moving one table integrally with the first stage main body,
The first stage main body is driven relatively in a predetermined direction, and a predetermined process is performed on an object placed on one of the tables. Is transported to another place, and when a predetermined process is performed on the object placed on the other table, the two-dimensional position of the object can be adjusted via the other table. . Therefore, for example, when the object is a substrate, it is possible to execute the alignment operation on the substrate on the other table in parallel with the exposure operation on the substrate on one stage while holding the table in the transport system. It becomes possible.

In the stage apparatus according to each of the fifth and sixth aspects of the present invention, as in the seventh aspect of the present invention,
A second stator (92E to 92H, 120) that can cooperate with the first and second movers, and is movable independently of the first stage body. Further comprising a stage body (ST2), wherein the second stator cooperates with the movable element provided on any of the tables supported by the transfer system to the second stage body, The table provided with the mover may be driven.

In such a case, when any table is transported onto the second stage main body by the transport system, that table is supported on the second stage main body. In this state, the table can be driven with respect to the second stage main body by cooperation of the second stator and the movable member provided on any of the tables. Therefore, as described above, one of the tables is integrated with the first stage main body.
In parallel with performing the predetermined process on the object placed on one of the tables while performing the fine movement relative to the first stage main body in a predetermined direction while performing the three-dimensional movement, When the other table is transported above the second stage main body by the transport system, and the other table is supported on the second stage main body to perform predetermined processing on an object on the other table, the other table is used. The position of the object with respect to the second stage main body can be adjusted via the table.

Therefore, for example, when the object is a substrate, it is possible to execute an alignment operation on the substrate on the other table in parallel with the exposure operation on the substrate on the other table. In this case, since the first stage main body and the second stage main body do not cause any inconvenience even if they are installed on independent stage bases, the size of each stage base can be reduced.

In this case, the first and second tables are each provided with a predetermined reflecting surface, and each of the first and second tables is supported on the first stage main body. A first interferometer system (140A) for receiving reflected light from the reflecting surface of the table and measuring the position of the table; and from the reflecting surface of any of the tables supported on the second stage body. And a second interferometer system (140B) for receiving the reflected light of the above and measuring the position of the table. In such a case, a table supported on the first stage main body by the first interferometer system and the second interferometer system,
And the position of the table supported on the second stage main body can be measured, so that the processing for the object on the first table and the processing for the object on the second table described above can be performed by changing the positions of the tables. Can be performed in parallel while managing.

According to a ninth aspect of the present invention, there is provided an exposure apparatus for exposing a substrate to form a predetermined pattern on the substrate, wherein the substrate is held as the object on the first and second tables, respectively. 9. The stage apparatus according to claim 8, wherein: an exposure optical system (PL) for exposing a substrate on the table supported on the first stage main body;
A mark detection system (ALG) for detecting a mark on the table supported on the stage body.

Here, the "mark on the table" means a mark existing on the table. Therefore, the mark includes, for example, a mark (for example, a reference mark on a reference mark plate) existing at a place other than the substrate on the table, as well as a mark (for example, an alignment mark) formed on the substrate.

According to this, in parallel with the exposure operation on the substrate on the table supported on the first stage body by the exposure optical system, marks on the table supported on the second stage body, for example, on the substrate It is possible to perform mark detection (alignment) by the mark detection system with respect to the mark, and the throughput can be improved by such simultaneous and parallel processing. Further, in this case, only the table on which the substrate for which the mark detection has been completed is placed on the first stage main body existing from the alignment position (the position below the mark detection system) to the exposure position (the position below the exposure optical system). And only the table on which the exposed substrate is placed can be transported from the exposure position to the substrate exchange position and the alignment position, so that the second stage main body moves to the exposure position or the first stage main body moves to the alignment position. Therefore, each stage main body can be installed completely independently. Therefore, in parallel with performing the exposure on the substrate on one table and performing the substrate exchange / alignment on the other table, one stage main body that supports and moves integrally with the one table. Since the operation does not adversely affect the other table supported by the other stage main body and moving integrally, the alignment accuracy and the exposure accuracy can be improved.

In this case, the first chamber containing the first stage main body and at least a part of the optical system for exposure is filled with an inert gas therein. (40A); and a second chamber (40B) accommodating the second stage body and at least a part of the mark detection system and filled with an inert gas therein.

In such a case, since the exposure is performed in the first chamber filled with an inert gas, vacuum ultraviolet light or the like having a short wavelength can be used as the illumination light for exposure. The resolution of the optical system can be improved. In addition, the second alignment filled with an inert gas is also performed.
Since the exposure is performed in a room, the substrate after the alignment can be immediately carried into the first stage main body in the first room and exposure can be started, and the time from the end of alignment to the start of exposure can be shortened. In this case, the first interferometer system measures and manages the position of the table supported on the first stage main body in the first chamber, and performs the exposure using the exposure optical system while performing the exposure. The substrate can be aligned by the mark detection system while measuring and managing the position of the table supported on the second stage main body in the second chamber by the second interferometer system.

According to an eleventh aspect of the present invention, there is provided a device manufacturing method including a lithography step, wherein exposure is performed in the lithography step using the exposure apparatus according to the ninth or tenth aspect.

According to this, since the exposure is carried out in the lithography process using each of the exposure apparatuses according to the ninth and tenth aspects, it is possible to produce a highly integrated device by improving the alignment accuracy and the exposure accuracy and the throughput. Performance can be improved.

[0038]

DESCRIPTION OF THE PREFERRED EMBODIMENTS << First Embodiment >> A first embodiment of the present invention will be described below with reference to FIGS.

FIG. 1 shows a schematic configuration of an exposure apparatus 10 according to the first embodiment. This exposure apparatus 10
This is a so-called step-and-scan type scanning exposure apparatus.

The exposure apparatus 10 includes a light source and an illumination unit ILU (not shown), an illumination system for illuminating a reticle R as a mask from above with exposure illumination light, and a reticle R mainly in a predetermined scanning direction, here Y Axial direction (Fig. 1
A reticle drive system driven in the direction perpendicular to the plane of the drawing, a projection optical system PL disposed below the reticle R as an exposure optical system, and a wafer W1 disposed below the projection optical system PL and serving as a substrate (and an object). , W2 are respectively mounted on wafer tables TB as first and second tables
1, a stage device 12 including TB2, and the like.

Of the above, each of the above parts except for a light source (not shown)
It is installed on the floor of an ultra-clean room, and is housed in an environment control chamber (hereinafter, referred to as “chamber”) 14 in which temperature, humidity, and the like are accurately controlled.

As the light source, a pulse laser light source for outputting pulsed ultraviolet light in a vacuum ultraviolet region, such as an F ₂ laser light source (output wavelength 157 nm) or an ArF excimer laser light source (output wavelength 193 nm), is used. . This light source is installed in a service room with a low cleanness different from the ultra-clean room in which the chamber 14 is installed, or in a utility space below the floor of the ultra-clean room, and provided with an illumination unit in the chamber 14 via a drawing optical system (not shown). Connected to ILU.

The light source determines the repetition frequency (oscillation frequency) and pulse energy of the pulse light emission from the main controller 1.
6 (not shown in FIG. 1, see FIG. 15) under the control of a laser controller 18 (not shown in FIG. 1, see FIG. 15).

As a light source, an ultraviolet light source such as a KrF excimer laser light source (output wavelength: 248 nm) or another vacuum ultraviolet light source such as an Ar ₂ laser light source (output wavelength: 126 nm) may be used.

The illumination unit ILU is housed in an illumination system housing 20 for sealing the inside from the outside air, and is housed in the illumination system housing 20 in a predetermined positional relationship.
An illumination optical system including a secondary light source forming optical system, a beam splitter, a condenser lens system, a reticle blind, and an imaging lens system (all not shown), and the like.
Rectangular (or arc-shaped) illumination area IA on reticle R
R (see FIG. 2) is illuminated with uniform illuminance. Illumination optical systems include, for example, JP-A-4-6951513,
A structure similar to that disclosed in JP-A-320956 or the like is used.

The illumination system housing 20 is filled with clean helium gas (He) or dry nitrogen gas (N ₂ ) having a concentration of air (oxygen) less than several ppm.

The reticle drive system is housed in a reticle chamber 22 shown in FIG. At a connection portion between the reticle chamber 22 and the illumination system housing 20, a light transmission window made of fluorite or the like is formed. In the reticle chamber 22, the concentration of air (oxygen) is several p.
Clean helium gas (He) or dry nitrogen gas (N ₂ ) of about pm is filled.

The reticle drive system includes a reticle stage RST that holds a reticle R on a reticle base board 24 shown in FIG. 1 and is movable in an XY two-dimensional plane, and a linear drive mechanism (not shown) that drives the reticle stage RST. A reticle driving unit 26 including a motor and the like (not shown in FIG.
5), and a reticle interferometer system 28 that manages the position of the reticle stage RST.

More specifically, the reticle stage RST is actually levitated and supported on a reticle base plate 24 via a non-contact bearing (not shown), for example, a vacuum preload type gas static pressure bearing device. A reticle coarse movement stage driven in a predetermined stroke range in the Y-axis direction, which is a scanning direction, by a linear motor, and a driving mechanism including a voice coil motor or the like with respect to the reticle coarse movement stage. a reticle fine movement stage that is finely driven in the θz direction (a rotation direction around the Z axis). A reticle R is suction-held on the reticle fine movement stage via an electrostatic chuck or a vacuum chuck (not shown). Although not shown in the present embodiment, the reaction force generated by the movement of the reticle coarse movement stage drives the reticle coarse movement stage as disclosed in, for example, Japanese Patent Application Laid-Open No. 8-63231. Moving and stator of the linear motor to perform the reticle base board 2
4 by moving them in opposite directions relative to each other.

As described above, reticle stage RST
Is actually composed of two stages, but in the following, for convenience, reticle stage RST is controlled by reticle driving unit 26 (not shown in FIG. 1 and see FIG. 15) in the X-axis and Y-axis directions. The description will be made assuming that the stage is a single stage in which minute driving, minute rotation in the θz direction, and scanning driving in the Y-axis direction are performed. The reticle driving unit 26 is a mechanism using a linear motor, a voice coil motor, or the like as a driving source, but is shown as a simple block in FIG. 15 for convenience of illustration.

On the reticle stage RST, as shown in FIG. 2, a parallel flat plate moving mirror 30 made of the same material (for example, ceramic) as the reticle stage RST is provided at one end in the X-axis direction. The movable mirror 30 has a reflecting surface formed on one surface in the X-axis direction by mirror finishing. The measurement axis BI6X configuring the interferometer system 28 of FIG. 1 is directed toward the reflecting surface of the movable mirror 30.
Are irradiated with an interferometer beam from the interferometer, and the interferometer measures the position of the reticle stage RST by receiving the reflected light and measuring a relative displacement with respect to a reference plane. Here, the interferometer having the measurement axis BI6X actually has two interferometer optical axes that can be measured independently, and measures the position of the reticle stage RST in the X-axis direction and the yaw amount. Measurement is possible.
The interferometer having the measurement axis BI6X performs relative rotation between the reticle and the wafer based on the yawing information and the X position information of the wafer tables TB1 and TB2 from the interferometer 32 having the measurement axis BI1X on the wafer stage, which will be described later. It is used for controlling the rotation of the reticle stage RST in a direction to cancel the rotation error) or for performing X-direction synchronization control (position adjustment).

On the other hand, a pair of corner cube mirrors 36 is provided on one side (front side in FIG. 1) of the reticle stage RST in the Y-axis direction which is the scanning direction (scanning direction).
A, 36B are installed. Then, from a pair of double-pass interferometers (not shown), the length measuring axes BI7Y and BI7Y shown in FIG.
An interferometer beam indicated by 8Y is irradiated and returned from the corner cube mirrors 36A and 36B to a reflection surface (not shown) provided on the reticle base board 24, and the respective reflected lights reflected there return along the same optical path. And the relative displacement of each corner cube mirror 36A, 36B from the reference position (the reflection surface on the reticle base board 24 at the reference position) is measured. The measurement values of these double-pass interferometers are stored in a stage controller 38 (not shown in FIG.
), And the position of the reticle stage RST in the Y-axis direction is measured based on the average value. The information on the position in the Y-axis direction is stored in a wafer-side length measurement axis BI1Y described later.
The relative position between the reticle stage RST and the wafer table TB1 or TB2 is calculated based on the measurement values of the interferometer having the interferometer (see FIG. 2), and the reticle and wafer in the scanning direction (Y-axis direction) at the time of scanning exposure based on the calculation. Used for synchronization control.

That is, in this embodiment, the length measurement axis BI6
A reticle interferometer system 28 is constituted by an interferometer indicated by X and a pair of double-pass interferometers indicated by length measurement axes BI7Y and BI8Y.

The material of the glass substrate forming the reticle R needs to be properly used depending on the light source used.
For example, when a vacuum ultraviolet light source such as an F ₂ laser light source is used as a light source, fluoride crystals such as fluorite, magnesium fluoride, and lithium fluoride, or a hydroxyl group concentration of 1
It is necessary to use synthetic quartz (fluorine-doped quartz) containing not more than 00 ppm and containing fluorine. When using an ArF excimer laser light source or a KrF excimer laser light source, use synthetic quartz in addition to the above substances. Is also possible.

Returning to FIG. 1, the projection optical system PL is joined to the reticle chamber 22 without any gap near the upper end of the lens barrel. Here, as the projection optical system PL, a reduction system with a telephoto reduction of 1/4 (or 1/5) on both the object plane (reticle R) side and the image plane (wafer W) side is used. Therefore, when the reticle R is irradiated with illumination light (ultraviolet pulse light) from the illumination unit ILU, an image forming light beam from a portion of the circuit pattern area on the reticle R illuminated by the ultraviolet pulse light is projected. The partial inverted image of the circuit pattern is formed into a slit or a rectangle (polygon) at the center of the field of view on the image plane side of the projection optical system PL each time each pulse of the ultraviolet pulse light is irradiated. Imaged. As a result, the projected partial inverted image of the circuit pattern is reduced and transferred to the resist layer on the surface of one of the plurality of shot areas on the wafer W arranged on the imaging plane of the projection optical system PL. .

As the projection optical system PL, Ar
When using an F excimer laser light source or a KrF excimer laser light source, a refraction system including only a refraction optical element (lens element) is mainly used. When an F ₂ laser light source, an Ar ₂ laser light source, or the like is used, for example, As disclosed in JP-A-3-282527, a so-called catadioptric system (catadioptric system) combining a refractive optical element and a reflective optical element (concave mirror, beam splitter, or the like), or only a reflective optical element. The reflection optical system is mainly used. However, in the case of using the F ₂ laser light source, it is possible to use a refracting system.

As the catadioptric projection optical system, other than the above, for example, Japanese Patent Application Laid-Open Nos.
For example, a catadioptric system having a beam splitter and a concave mirror can be used as a reflective optical element disclosed in, for example, Japanese Patent Application Publication No. 0195. In addition, a catadioptric system having a concave mirror or the like, which does not use a beam splitter, can be used as a reflective optical element, as disclosed in Japanese Patent Application Laid-Open Nos. 8-334695 and 10-3039.

In addition, US Pat. No. 5,031,976
No. 5,488,229 and 5,717,51
No. 8 discloses a plurality of refractive optical elements and two mirrors (a primary mirror that is a concave mirror, and a sub-mirror that is a back mirror in which a reflective surface is formed on the side opposite to the incident surface of the refractive element or the parallel flat plate). ) May be arranged on the same axis, and a catadioptric system may be used in which an intermediate image of the reticle pattern formed by the plurality of refractive optical elements is re-imaged on the wafer by the primary mirror and the secondary mirror. In this catadioptric system, a primary mirror and a secondary mirror are arranged following a plurality of refractive optical elements, and illumination light is reflected through a part of the primary mirror in the order of a secondary mirror and a primary mirror. Part to reach the wafer.

Further, the material (glass material) of the lens constituting the projection optical system PL needs to be properly used depending on the light source used. In the case of using an ArF excimer laser light source or KrF excimer laser light source may be used both synthetic quartz and fluorite, but when using vacuum ultraviolet light source such as F ₂ laser light source as the light source, all fluorite Must be used.

In this embodiment, the inside of the lens barrel of the projection optical system PL is used.
Has a concentration of air (oxygen) less than several ppm
Clean helium gas (He) or dry nitrogen gas
(N _Two) Is filled.

Next, the stage device 12 and the like will be described with reference to FIG.
19 will be described.

As shown in FIG. 1, the stage device 12 is installed inside a chamber 42 in which a wafer chamber 40 is formed. The vicinity of the lower end of the lens barrel of the projection optical system PL is joined to the upper wall of the chamber 42 without any gap.

The stage device 12 includes a pair of base plates BP installed horizontally in the wafer chamber 40 and supported on the base plate BP at three or four points by a vibration isolating unit 43 substantially parallel to the upper surface of the base plate BP. Stage bases 44A and 44B, these stage bases 4
4A and 44B, are supported by floating through non-contact bearings (not shown) via a vacuum preload type gas static pressure bearing device (not shown), and are in the X-axis direction (the horizontal direction in the plane of FIG. 1) and the Y-axis direction (in FIG. The first and second stage bodies ST1, ST2, which can be moved two-dimensionally independently in the direction perpendicular to the paper surface).
Wafers W1 and W2 are mounted, respectively, and drive wafer tables TB1 and TB2 supported on first and second stage bodies ST1 and ST2, respectively, in a non-contact manner, and first and second stage bodies ST1 and ST2. Stage drive system,
And transport system 1 for transporting wafer tables TB1 and TB2
90 (see FIG. 15) and the like.

The wafer chamber 40 is filled with clean helium gas (He) or dry nitrogen gas (N ₂ ) having a concentration of air (oxygen) of about several ppm. Further, a chamber 42 for forming the wafer chamber 40 is formed.
1 in the X-axis direction (the front side in FIG. 1).
As shown in FIG. 3, a wafer loader chamber 48 that partitions the wafer loader chamber 46 is disposed adjacent to the + X side half (the right half in FIG. 1) of the right side in FIG. .

Inside the wafer loader chamber 46, a wafer loader 50 composed of a horizontal articulated robot (scalar robot) is arranged. Also, the + of the wafer loader chamber 46
An opening 46a is formed at a predetermined height on the side wall on the Y side. The opening 46a is opened and closed by a sliding door 52 that moves in a vertical direction (Z-axis direction).

A connecting portion 54 is provided outside the wafer loader chamber 46 from the opening 46a, and communicates with the wafer inlet / outlet 42a provided on the −Y side wall of the chamber 42 through the connecting portion 54. .

An opening 46b which is opened and closed by a door 56 is formed at a predetermined height on a side wall on the -Y side of the wafer loader chamber 48.
The transfer of the wafer to / from the external transfer system is performed via the interface.

Although not shown, a wafer carrier for storing a plurality of wafers is installed in the wafer loader chamber 46. Then, the wafer loader 50
Thus, the wafer is exchanged between the wafer carrier and wafer tables TB1, TB2 at a predetermined loading position described later.

In this embodiment, the inside of the wafer loader chamber 46 is also filled with helium gas or dry nitrogen gas, but the purity of the helium gas or the like in the wafer loader chamber 46 is set slightly lower than that in the wafer chamber 40. Have been.

FIG. 4 is a schematic perspective view of the stage device 12 housed in the chamber 42. here,
With reference to FIG. 4, the components of the stage device 12 will be described in detail.

As shown in FIG. 4, the drive system of the first stage main body ST1 includes a pair of linear guides 60A and 60B extending in the X-axis direction on both sides of the stage base 44A in the Y-axis direction. , The Y-axis direction of which is the longitudinal direction, and which moves along the linear guides 60A, 60B.
A moving body 62, a stator (not shown) extending in the longitudinal direction of the moving body 62, and a mover integrally provided on the first stage main body ST1 corresponding to the stator. And a shaft linear motor 114A (not shown in FIG. 4; see FIG. 15).

The linear guide 60A is disposed on one side (+ Y side) of the stage base 44A in the Y-axis direction, and a pair of vibration isolating members provided on the base plate BP so as to be substantially parallel to the upper surface of the base plate BP. The vicinity of both ends is supported by the unit 58.

Similarly, the linear guide 60B is disposed on the other side (−Y side) in the Y-axis direction of the stage base 44A.
A pair of anti-vibration units 5 provided on the base plate BP so as to be substantially parallel to the upper surface of the base plate BP.
8 support the vicinity of both ends.

In the inside of the linear guides 60A and 60B,
Armature coils (not shown) are arranged at predetermined intervals along the X-axis direction. In the present embodiment, the linear guide 60
A, 60B, a pair of X-axis linear motors 66A, 6B
6B are respectively configured. Therefore, in the following description, the linear guides 60A and 60B are appropriately referred to as "stators 60A and 60B".

A pair of movers 74A and 74B having a U-shaped cross section are provided at both ends of the first moving body 62 in the Y-axis direction.
Are provided to face the stators 60A and 60B. The movers 74A and 74B are provided with a plurality of field magnets for generating an alternating magnetic field along the X-axis direction, and the movers 74A and 74B and the stators 60A and 60B perform the first movement. A pair of moving magnet type X-axis linear motors 66A and 66B for driving the first stage main body ST1 in the X-axis direction integrally with the body 62 are configured.

Here, the mover 74B of the X-axis linear motor 66B is provided at the -Y side end of the moving body 62 and has a surface on the -Y side of a slider 70A having an inverted U-shaped cross section extending in the X-axis direction. It is fixed to. The slider 70A is accurately guided in the X-axis direction by a yaw guide 72A extending along the X-axis direction at the -Y side end of the stage base 44A. This will be described in more detail.
Sliders 70 facing both sides in the Y-axis direction of 2A
On the surface A, a plurality of unshown gas static pressure bearing devices are provided at predetermined intervals along the X-axis direction. Then, the yaw guide 72A is supplied from these gas static pressure bearing devices.
The slider 70A is supported in a non-contact manner with a yaw guide 72A by a static pressure of a pressurized gas (for example, helium or nitrogen gas, etc.) jetted to the yaw guide 72A. In this case, the plurality of gas static pressure bearing devices that eject the pressurized gas to the surface on the + Y side of the yaw guide 72A have respective ejection pressures such that the static pressure of the pressurized gas is substantially the same. Stage control device 38
(See FIG. 15). Similarly, a plurality of gas static pressure bearing devices that eject a pressurized gas to the −Y side surface of the yaw guide 72A have respective ejection pressures such that the static pressure of the pressurized gas is substantially the same. , And is controlled by a stage controller 38 (see FIG. 15).
That is, yawing (θz rotation) of the moving body 62 is prevented from occurring in this manner.

Further, a gas bearing device (not shown) for jetting a pressurized gas (for example, helium or nitrogen gas) toward the upper surface of the stage base 44A is provided at a plurality of predetermined locations on the bottom surface of the moving body 62. The moving body 6 is driven by the static pressure of the pressurized gas ejected from these gas bearing devices.
2 is levitated above the upper surface of the stage base 44A via a predetermined clearance (for example, about several microns). Similarly, on the bottom surface of the first stage main body ST1,
At a plurality of predetermined locations, there are provided gas static pressure bearing devices for ejecting a pressurized gas (for example, helium or nitrogen gas) toward the upper surface of the stage base 44A. The gas static pressure bearing devices are ejected from these gas static pressure bearing devices. Due to the static pressure of the pressurized gas, the first stage main body ST1 is levitated above the upper surface of the stage base 44A via a predetermined clearance (for example, about several microns).

When the first stage main body ST1 is driven in the Y-axis direction by the Y-axis linear motor 114A, a reaction force of the driving force acts on the moving body 62. This reaction force acts on the yaw guide 72A via the slider 70A. However, in the present embodiment, the stage controller 38 controls the Y-guide 72A so that the reaction force is reduced.
The pressure at which the pressurized gas is blown out of the static gas pressure bearing device, which is provided on both sides in the axial direction, is controlled. That is, in this embodiment, a kind of reaction force canceling mechanism is constituted by the static gas pressure bearing device and the stage control device 38. It should be noted that a magnetic guide device may be used instead of the combination of the yaw guide 72A and the slider 70A, thereby forming a reaction force canceling mechanism.

On the other hand, a pair of X-axis linear motors 66A, 6A
When the moving body 62 is driven in the X-axis direction by 6B, the reaction force acts on the stators 60A and 60B. However, since the stators 60A and 60B are supported by the pair of vibration isolating units 58 provided on the base plate BP, the transmission of the reaction force to the base plate BP is effectively suppressed. For this reason, the reaction force is effectively prevented from causing vibration of other components supported on the base plate BP.

As described above, the second stage body ST
The drive system 2 includes a pair of linear guides 60 extending in the X-axis direction on both sides of the stage base 44B in the Y-axis direction.
C, 60D, and a second moving body 64 that moves along the linear guides 60C, 60D with the Y-axis direction as its longitudinal direction.
A Y-axis including a stator (not shown) extending in the longitudinal direction of the moving body 64 and a movable element (not shown) integrally provided on the second stage main body ST2 corresponding to the stator. And a linear motor 114B (not shown in FIG. 4, see FIG. 15).

The linear guide 60C is disposed on one side (+ Y side) of the stage base 44B in the Y-axis direction, and a pair of anti-vibration devices provided on the base plate BP so as to be substantially parallel to the upper surface of the base plate BP. The vicinity of both ends is supported by the unit 58.

Similarly, the linear guide 60D is disposed on the other side (−Y side) in the Y-axis direction of the stage base 44B.
A pair of anti-vibration units 5 provided on the base plate BP so as to be substantially parallel to the upper surface of the base plate BP.
8 support the vicinity of both ends.

The linear guides 60C and 60D are configured in the same manner as the linear guides 60A and 60B described above, and the linear guides 60C and 60D form the stators of a pair of X-axis linear motors. Therefore,
In the following description, the linear guides 60C, 60D
Are appropriately referred to as “stators 60C and 60D”.

A pair of U-shaped (U-shaped) movers 74C and 74D are provided at both ends of the second moving body 64 in the Y-axis direction.
Are provided facing the stators 60C and 60D. The movers 74C and 74D are the same as the movers 74A and 74A described above.
74B, these movers 74C, 74
D and a pair of moving magnet type X-axis linear motors 66C and 66D for driving the second stage body ST2 in the X-axis direction integrally with the second moving body 64 by the stators 60C and 60D. I have.

Mover 74D of X-axis linear motor 66D
Is provided at the end on the −Y side of the movable body 64 and is fixed to the −Y side surface of the slider 70 </ b> B having an inverted U-shaped cross section extending in the X-axis direction. The slider 70B is mounted on the stage base 44B.
Is guided in the X-axis direction accurately by a yaw guide 72B extending along the X-axis direction at the end on the -Y side.

The slider 70B is provided with a plurality of static gas bearings in the same arrangement as the slider 70A, and the stage control device 38 controls the ejection pressure of the pressurized gas from these static gas bearings. By performing the same control as described above, yawing (θz rotation) of the moving body 64 is prevented from occurring.

The effect of the reaction force generated by driving the second stage main body ST2 in the X-axis direction and the Y-axis direction is canceled in the same manner as in the case of the first stage main body ST1. These reaction forces are prevented from causing vibration of other components.

As shown in FIG. 4, the transfer system 190 (see FIG. 15) for the wafer tables TB1 and TB2 includes a frame 76 extending in the X-axis direction at the -Y side end of the upper surface of the base plate BP. A linear guide 78 having a U-shaped cross section and extending in the X-axis direction and fixed to the + Y side surface of the frame 76, and a pair of transport arm mechanisms 80A and 80B moving along the linear guide 78. And

As shown in an enlarged view in FIG. 5, one transfer arm mechanism 80A has a U-shape in a plan view in which an armature unit (not shown) is integrally provided at a base end thereof. Slider portion 82 and a pair of telescoping portions 84 respectively provided at the tips of the protruding portions at both ends in the X-axis direction of the slider portion 82.
A, 84B and the pair of telescopic arms 84A, 84B.
And a transfer arm 86 provided at the same position. An electromagnet is built in the tip of the transfer arm 86.

The linear guide 78 is provided with a magnetic pole unit comprising a plurality of field magnets for generating an alternating magnetic field along the X-axis direction, corresponding to the armature unit of the slider portion 82. That is, a first moving linear motor 88 of a moving coil type that drives the transfer arm mechanism 80A in the X-axis direction by the armature unit of the slider portion 82 and the magnetic pole unit provided on the linear guide 78 (see FIG.
FIG. 5 (not shown in FIG. 5, see FIG. 15).

The other transfer arm mechanism 80B has the same configuration as the above-described transfer arm mechanism 80A. Also,
The armature unit provided on the slider portion 82 and the magnetic pole unit provided on the linear guide 78 constitute the transfer arm mechanism 80B.
Moving linear motor 90 (not shown in FIGS. 4 and 5; FIG. 15)
Reference) is configured.

The expansion and contraction of the transfer arm 86 of the transfer arm mechanisms 80A and 80B, the turning on and off of the electromagnets built in the transfer arm 86, and the driving of the first and second transfer linear motors 88 and 90 are performed as follows. The stage is controlled by a stage controller 38 in response to an instruction from the main controller 16 (see FIG. 15). The transfer operation of the wafer tables TB1 and TB2 by the transfer system configured as described above will be described later in detail.

FIG. 6 shows that the wafer tables TB1 and TB2 are moved by the above-described transfer system to the first and second stage bodies ST.
1 and ST2, respectively, are shown in a state where they are transported and supported respectively. FIG. 7 shows the first stage main body ST1 of FIG. 6 and the wafer table T supported by the first stage main body ST1.
B1 is shown taken out. FIG. 8 shows FIG.
Is shown in an exploded perspective view. Here, the wafer table TB1 and an apparatus for supporting the wafer table TB1 on the first stage main body ST1 will be described with reference to these drawings.

The wafer table TB1 is formed of a nonmagnetic material having a square shape in plan view, for example, ceramics. As shown in FIG. 7, a pair of X movable mirrors 102a and 102b extending in the Y-axis direction are provided on both ends in the X-axis direction on the upper surface of the wafer table TB1, and the X-axis A Y moving mirror 102c extending in the direction is provided. Also, on the upper surface of the wafer table TB1,
The reference mark plate FM1 is fixed. Although not shown, a reference mark for a baseline (hereinafter, referred to as “first reference mark” for convenience) and a pair of reference marks for reticle alignment (hereinafter, referred to as “first reference mark”) are provided on the reference mark plate FM1. Etc.) are formed in a predetermined positional relationship. The wafer W1 is placed on the wafer table TB1 via a wafer holder (not shown).
Are fixed by electrostatic suction or vacuum suction. Further, moving mirrors 102a, 102 of wafer table TB1
An iron plate 96 is fixed to the side surface (side surface on the −Y side) on which neither b nor 102c is provided. This is because when the wafer table TB1 is transferred by the transfer arm mechanisms 80A and 80B described above, the transfer arm 86
The iron plate 96 is magnetically attracted and transported by an electromagnet incorporated therein.

In FIG. 7, wafer table TB1 is
A part of the wafer table TB1 is provided, and the remaining part is provided on the first stage main body ST1 by a support / fine movement system 91A as a driving device. Supported by.

More specifically, as shown in FIG. 8, four electromagnets 9 for generating magnetic attraction in the Z-axis direction are provided at the four corners of the upper surface of the first stage main body ST1.
2A, 92B, 92C and 92D are respectively embedded. These electromagnets 92A, 92B, 92C, 92D
Are respectively opposed to the bottom surface of the wafer table TB1.
Iron pieces 94A, 94B, 9 as rectangular parallelepiped magnetic members
4C and 94D are provided.

In the center of the upper part of the first stage main body ST1, 3 × 3 = 9 armature coils 98 arranged in a matrix in the XY two-dimensional directions are embedded.
Each armature coil 98 has a magnetic member 99 (FIG. 8) installed in the internal space of the first stage main body ST1 in parallel with the XY plane.
, Not shown, see FIG. 12).
In the present embodiment, the armature unit 100 is constituted by the nine armature coils 98 and the magnetic members 99.

The upper surface of the armature unit 100 is covered with a flat member made of a nonmagnetic material such as ceramic, and the upper surface of the flat member serves as a guide surface 102. Openings for embedding the four electromagnets 92A, 92B, 92C, and 92D are formed at the four corners of the flat member.

As shown in FIG. 9, each armature coil 98 has a square bottom surface (a surface parallel to the XY plane) having a side length of 3 L, and has a center parallel to the Z axis. Axis C
It is configured in the shape of a prism having a hollow portion penetrating in the Z direction near X. The cross-sectional shape of this hollow portion has a side length L
It has a square shape. This armature coil 98 has
A current is supplied from a current driver (not shown) through the terminals 104a and 104b. Then, the supplied current flows with a substantially uniform current density (volume density) around the central axis CX. The current value and the current direction of the current flowing through the armature coil 98 are controlled by the stage control device 38 via a current driving device (not shown).

Corresponding to the armature unit 100, a magnetic pole unit 106 composed of a plurality of permanent magnets arranged in XY two-dimensional directions is provided at the center of the bottom surface of the wafer table TB1, as shown in FIG. Have been. A plurality of gas static pressure bearing devices 108 for jetting a pressurized gas (for example, nitrogen or helium) toward the guide surface 102 are arranged between specific adjacent permanent magnets constituting the magnetic pole unit 106. ing. In FIG. 8, the gas static pressure bearing device 108 is shown with dots (•) for identification.

This will be described in more detail.
10 and FIGS. 11 (A) to 11 (B) in the center of the bottom surface of B1.
A magnetic pole unit 106 as shown in (C) is provided. The magnetic pole unit 106 includes permanent magnets 171N, 171S, and 172 so that the whole is mesh-shaped in plan view.
N, 173N, 173S, 174, and 175 are arranged. 10 is a bottom view of the magnetic pole unit, FIG. 11 (A) is a cross-sectional view taken along line AA of FIG. 10, FIG. 11 (B) is a cross-sectional view taken along line BB of FIG. 11 (C) is a sectional view taken along line CC of FIG. However, FIGS. 11A to 11C are shown upside down.

Here, the permanent magnets 171N, 171S, 1
72N, 173N, and 173S are permanent magnets manufactured by, for example, sintering a rare earth material and magnetized in the Z direction (hereinafter, also referred to as "perpendicular magnetization"). Among them, the permanent magnet 17
1N, 172N, and 173N are permanent magnets whose surfaces facing the guide surface 102 are N magnetic pole surfaces, and permanent magnets 171S and 173S are permanent magnets whose surfaces facing the guide surface 102 are S magnetic pole surfaces. It is. In FIG. 10, the permanent magnets 171N, 171S, 172N, 173N, 17
As for 3S, the surfaces facing the guide surface 102 are shown with their polarities. FIGS. 11A and 11C show the polarities of both end surfaces in the Z direction.

The permanent magnets 174 and 175 are permanent magnets manufactured by, for example, sintering a rare earth material and magnetized in the X or Y direction (hereinafter also referred to as “horizontal magnetization”). In FIGS. 11A and 11C, the polarities of both end faces in the X direction or the Y direction are described above those elements.

The sizes and polarities of each permanent magnet are as shown in FIGS. 10 and 11A to 11C.

As a result, FIG. 11 (A) and FIG. 11 (C)
As is apparent from FIG. 7, the perpendicularly magnetized permanent magnets 171N, 171S, 172N,
The magnetic pole faces of the 173N and 173S on the side opposite to the side facing the guide face 102 are permanent magnets 174 and 17 magnetized horizontally.
5 is recessed by a height T from a surface opposite to the side facing the guide surface 102, and recesses are respectively formed. Then, FIGS. 11A and 11C
A magnetic member 177 is inserted into the upper concave portion of the permanent magnets 171N and 171S as shown in FIG.
A magnetic member 178 is inserted into a concave portion above N, and a magnetic member 179 is inserted into a concave portion above permanent magnets 173N and 173S. Such a magnetic member 17
As materials 7 to 179, materials having high magnetic permeability and high saturation magnetic flux density, such as pure iron, are used.

As described above, the magnetic pole unit 106 is configured such that the surface facing the guide surface 102 (the armature unit 100) and the surface on the opposite side are the same. Then, in the magnetic pole unit 106, as shown in FIG. 10, a plurality of spaces surrounded by the permanent magnet 174 or the permanent magnet 174 and the permanent magnet 175 are formed. In such a space, the aforementioned gas static pressure bearing device 1
08 is shown with a dot (•) in FIG.

On the bottom surface of the wafer table TB1, a total of 20 positions corresponding to the space indicated by the dot (•) in FIG.
Are arranged one by one.

The magnetic pole unit 106 configured as described above and the above-described armature unit 100 constitute a planar motor 110A (see FIGS. 8 and 15).

Next, the state of the formation of the magnetic circuit in the planar motor 110A and the distribution of the magnetic flux density corresponding thereto will be briefly described with reference to FIGS. 12 (A) and 12 (B).

In the magnetic pole unit 106, the permanent magnet 171
As shown by a solid arrow in FIG. 12A representatively showing the case where the N, 172S and the permanent magnet 174 are involved, the magnetic member 99 (the armature coil 98 is provided on the upper surface of the magnetic member 99). The permanent magnets 171N, 172N, 173N whose magnetic pole faces facing the N are arranged as N poles
Generates a magnetic flux in the −Z direction (downward on the paper surface), and the permanent magnet 17 whose magnetic pole surface facing the magnetic member 99 is an S pole
1S and 173S generate magnetic flux in the + Z direction (upward on the paper). And these permanent magnets 171N, 172N,
173N, 171S, 173S are permanent magnets 174, 1
75, the magnetic members 177, 178, 179 and the magnetic member 62 form a magnetic circuit. The magnetic circuit includes the perpendicular magnets 171N, 171S, 172N, 1
In the arrangement of 73N and 173S, it is formed for each of the perpendicular magnets adjacent to each other.

The permanent magnet 171N and the permanent magnet 171
In the magnetic circuit involving the permanent magnet 171S in the + X direction of N, as shown in FIG.
→ magnetic member 99 → permanent magnet 171S → permanent magnet 174
(And magnetic member 177 → permanent magnet 174) → permanent magnet 171N (and magnetic member 177 → permanent magnet 171N)
, A magnetic circuit is formed in which the magnetic flux sequentially passes through. The thickness T of the magnetic member 177 (and the magnetic members 178 and 179)
In consideration of the magnetic permeability and the saturation magnetic flux density of the magnetic members 177 to 179, the thickness is set to a minimum thickness at which the leakage magnetic flux above the magnetic pole unit 106 becomes equal to or less than an allowable value.

When the magnetic circuit shown in FIG. 12A is formed, the distribution of the magnetic flux density B in the X direction in the vicinity of the magnetic member 99, ie, at the Z position where the armature coil 98 is arranged, is shown in FIG. As shown in FIG. 12 (B), a distribution of the shape is obtained in which a good approximation is performed by a sine function or a trapezoidal function.
In FIG. 12B, when the direction of the magnetic flux is in the + Z direction, the value of the magnetic flux density B is positive, and when the direction of the magnetic flux is in the −Z direction, the value of the magnetic flux density B is negative.

In the above description, the permanent magnet 171N and the permanent magnet 171S in the + X direction of the permanent magnet 171N are provided.
Has explained the magnetic circuit related to
And the permanent magnet 17 in the −X direction of the permanent magnet 171
Similarly, a magnetic circuit is formed for the magnetic circuit related to 1S, the permanent magnet 171N, and the magnetic circuit related to the permanent magnet 171N in the ± Y direction with the permanent magnet 171N.
Further, the permanent magnet 171N (171S) and the permanent magnet 17
Magnetic circuit involving 3S (173N) and permanent magnet 17
A magnetic circuit involving the 2N and the permanent magnet 173S is formed in the same manner as described above.

FIG. 12B shows the distribution of the magnetic flux density B in the X direction, but the distribution of the magnetic flux density B in the Y direction is the same as the distribution in FIG. 12B.

The wafer table TB1 exists on the upper surface of the magnetic pole unit 106.
Is made of a non-magnetic material, so that the wafer table TB1
There is almost no leakage of magnetic flux to the side.

In this embodiment, stainless steel having high electric resistance, high saturation magnetic flux density, low magnetic hysteresis, and low coercive force is used as the material of the magnetic member 99, so that eddy current and hysteresis loss are reduced. And the magnetic resistance can be kept low.
, The magnetic flux having a high magnetic flux density can be continuously generated.

In this embodiment, a total of 20 hydrostatic pressure bearing devices 10 provided on the bottom surface of wafer table TB1 are provided.
The movable body (wafer table TB1 and the movable member) is discharged by the static pressure of the pressurized gas between the guide surface 102 and the bearing surface of each gas static pressure bearing device 108. The mirrors 102a to 102c, the wafer W1, and the magnetic pole unit 106 (static gas pressure bearing device 1)
08) and iron pieces 94A-94B)
Guide surface 1 formed on the upper surface of first stage main body ST1
02, for example, is floated and supported via a clearance of about 5 μm (see FIG. 7).

At this time, the magnetic pole unit 106 provided on the bottom surface of wafer table TB1 and first stage main body ST
1, a magnetic attractive force acts between the magnetic members 99 in the first magnetic member 99, and also a magnetic attractive force between the electromagnets 92A to 92D and the opposing iron pieces 94A to 94D (when zero). Is working). Therefore, an upward force (flying force) corresponding to a downward force, which is the sum of the magnetic attractive force and the own weight of the movable body itself, is generated.

That is, the total weight of the movable body, the magnetic attraction force between the magnetic pole unit 106 and the magnetic member 99, and the magnetic force between the iron pieces 94A to 94D opposed to the electromagnets 92A to 92D, respectively. The balance between the downward force corresponding to the sum of the dynamic suction force and the upward force (so-called gap pressure) due to the pressure of the pressurized gas blown from the static gas bearing device 108 toward the guide surface 102 is obtained. The thickness of the layer of pressurized gas, that is, the bearing clearance, is maintained at a desired value. Thus, in the present embodiment, the magnetic pole unit 106, the magnetic member 99, and the electromagnet 92
A support device 112 for supporting the wafer table TB1 above the first stage main body ST1 in a non-contact manner by the A to 92D, the iron pieces 94A to 94D, and the gas static pressure bearing device 108.
A (see FIG. 15).

The supporting device 1 is formed by the electromagnets 92A to 92D and the opposing iron pieces 94A to 94D.
12A constitutes a Z leveling drive device 116A (see FIG. 15) for slightly driving the wafer table TB1 supported in a non-contact manner on the first stage main body ST1 in the Z direction and the tilt direction (θx, θy direction) with respect to the XY plane. ing. Further, an XY driving device for driving the wafer table TB1 supported in a non-contact manner on the first stage main body ST1 by the support device 112A by the planar motor 110A in the XY plane is configured. The support device 112A, the Z leveling drive device 116A, and the plane motor 110A constitute a support / fine movement system 91A (see FIG. 15). This support and fine movement system 9
1A is controlled by the stage controller 38 in response to an instruction from the main controller 16 (see FIG. 15).

Next, the supporting member constructed as described above is used.
The operation of the fine movement system 91A will be described.

The stage controller 38 controls the four electromagnets 9
The wafer table TB1 can be driven in the Z-axis direction by increasing or decreasing the magnetic attraction generated by 2A to 92D by a fixed amount. Also, the stage control device 38
One set of electromagnets 92B, 92C and one set of electromagnets 92A,
By increasing or decreasing the magnetic attraction generated by at least one of the sets 92D by a fixed amount, the wafer table TB1
Can be rotated by a predetermined angle around the X axis passing through the center of gravity. Also, the stage control device 38 increases or decreases the magnetic attraction generated by at least one of the pair of electromagnets 92A and 92B and the pair of electromagnets 92D and 92C by a fixed amount, thereby shifting the wafer table TB1 to its center of gravity. Can be rotated by a predetermined angle about the Y-axis passing through.

In principle, the wafer table TB1 can be Z-leveling driven by the above-described control operation. However, the actual wafer table TB1
Of the wafer table TB1 is not as simple as described above, and the Z drive, θx drive, θy
It is necessary to drive simultaneously.

Therefore, as in the present embodiment, the position of wafer table TB1 in the directions of three degrees of freedom of Z, θx, and θy
When the attitude control is performed at four locations (electromagnets 92A to 92D), it is necessary to prevent control interference due to the generation of driving force at each location.

Therefore, in the present embodiment, the main controller 16
, Θx, θy of wafer table TB1 given by
Stage control device 3 based on the target values in the three degrees of freedom
8 performs a predetermined calculation including a decoupling calculation, and performs electromagnet 9
The target values of the magnetic attraction force to be generated in each of 2A to 92D are calculated, and the magnetic attraction force generated by electromagnets 92A to 92D is controlled in accordance with the calculation result. -Leveling drive control is performed.

It should be noted that the Z,
The target values in the three degrees of freedom directions of θx and θy are determined by the main controller 16
Is calculated based on the detection result of the relative position shift in the Z, θx, and θy directions with respect to the imaging plane of the projection optical system PL in the exposure area on the surface of the wafer W1 (or the wafer W2).
In order to detect the relative positional deviation, the exposure apparatus 10 of the present embodiment is not shown in FIGS.
Actually, a multi-point focus position which is one of oblique incident light type focus detection systems (focus detection systems) for detecting a position in the Z direction (optical axis AX direction) within the exposure area on the surface of the wafer W1. A detection system AF (see FIG. 15) is provided. The multi-point focus position detection system AF includes an irradiation optical system and a light receiving optical system (not shown). For the detailed configuration and the like of this multi-point focus position detection system AF,
For example, it is disclosed in JP-A-6-283403.

Next, the magnetic pole unit 106 and the magnetic member 9
Drive of wafer table TB1 by the Lorentz electromagnetic force generated by the interaction between the magnetic flux between step 9 and the current flowing through armature coil 98 will be described.

When an electric current is supplied to the armature coil 98 in the environment of the magnetic flux density B having the distribution shown in FIG. 12B, a Lorentz electromagnetic force is generated in the armature coil 98. The reaction force of this Lorentz electromagnetic force is the magnetic pole unit 10
6, the wafer table TB1 and thus the wafer W1
Drive. Incidentally, the magnitude and direction of the Lorentz electromagnetic force generated in the armature coil 98 depends on the armature coil 98.
Depends on the magnitude and direction of the current supplied to the magnetic pole unit 106 and the armature unit 100, but in the present embodiment, when the wafer table TB1 is moved in the X direction, the stage control device 38
Selects a pair of two armature coils 98 that are adjacent in the X direction according to the X position of the magnetic pole unit 106, and determines the positional relationship between the magnetic pole unit 106 and the armature unit 100 for each pair of the armature coils 98. 90 ° phase with each other
The sine wave current of the same amplitude which is different only from the magnetic pole unit 1 by the X component of the resultant force of the Lorentz electromagnetic force.
Control is constant regardless of the X position of 06. When a current is applied to drive the magnetic pole unit 106 in the X direction, a force for driving the magnetic pole unit 106 in the Y direction and a rotational force around the Z axis are generally generated. Therefore, the stage control device 38 adjusts the current flowing through each armature coil 98 so that the force for driving the magnetic pole unit in the Y direction and the rotational force become zero as a whole. In addition, by controlling the amplitude and direction of the sine wave current supplied to each armature coil 98, the magnitude and direction of the force driving the magnetic pole unit 106 are controlled.

When the magnetic pole unit is moved in the Y direction, the magnetic pole unit 106 is driven in the Y direction in the same manner as in the X direction, with a constant driving force regardless of the Y position of the magnetic pole unit 106. It is carried out.

A current is supplied to each armature coil 98 in a pattern in which the current pattern for driving the magnetic pole unit 106 in the X direction and the current pattern for driving in the Y direction are superposed at an appropriate ratio. The magnetic pole unit 1 with an arbitrary driving force in an arbitrary direction along the XY plane.
06 is driven.

Further, by driving the magnetic pole unit 106 without canceling out the rotational force, the magnetic pole unit 106 is driven to rotate in a desired rotational direction and a desired rotational force.

As described above, the exposure apparatus 10 of the present embodiment
In the above, the position of the wafer table TB1 and thus the wafer W1 is controlled by controlling the current supplied to the armature coil 98 in accordance with the XY position and attitude (rotation about the Z axis) θz of the wafer table TB1.

As is clear from the above description, in the present embodiment, the first stator is constituted by the electromagnets 92A to 92D and the armature unit 100 provided on the first stage main body ST1, and the first stator is formed on the wafer table TB1. The electromagnets 92A to 92D and the armature unit 10
0 and iron pieces 94A to 94D which can cooperate as described above.
And the magnetic pole unit 106 constitute a first mover. The first stators (92A to 92A)
D, 100) and the first mover (94A to 94D, 106)
The wafer table TB1 is supported on the first stage main body ST1 in a non-contact manner by the gas static pressure bearing device 108 and the wafer table TB1 is moved to the first stage main body ST1 by X, Y, θz, Z, θx, A support / drive system 91A is configured as a drive device that minutely drives in six degrees of freedom directions of θy.

Returning to FIG. 6, the other wafer table TB2
Above the second stage main body ST2.
It is supported in a non-contact manner via a support / fine movement system 91B (see FIG. 15) configured similarly to fine movement system 91A.

The wafer table TB2 is constructed similarly to the wafer table TB2, and has X movable mirrors 102d and 102e and a Y movable mirror 1 on its upper surface as shown in FIG.
02f is provided. Also, the wafer table T
A wafer W2 is held on B2 by electrostatic suction or vacuum suction via a wafer holder (not shown). Also,
On the upper surface of wafer table TB2, reference mark plate FM1
A reference mark plate FM2 similar to that described above is provided.

As shown in an exploded perspective view of FIG. 13, an iron plate 96 is fixed to a side surface on the −Y side of the wafer table TB2. Further, the wafer table TB2
Iron pieces 94E, 94F, 94
G and 94H are fixed respectively, and a magnetic pole unit 118 configured similarly to the magnetic pole unit 106 is provided at the center of the bottom surface. An aerostatic pressure bearing device 108 is disposed in a space between predetermined adjacent permanent magnets of the magnetic pole unit 118.

The second stage main body ST2 is the same as the first stage main body ST2.
It is configured in the same manner as the stage main body ST1, and on its upper surface,
As shown in FIG. 13, iron pieces 94E, 94F, 94
G, 94H and electromagnets 92E, 92F,
92G and 92H are embedded. In the center of the upper portion of the second stage main body ST2, the armature unit 100 described above includes 3 × 3 = 9 armature coils 98 and magnetic members 99 arranged in a matrix in the XY two-dimensional directions. Armature unit 12 configured similarly to
0 is embedded. The upper surface of the armature unit 120 is covered with a flat member made of a nonmagnetic material such as ceramic, and the upper surface of the flat member serves as a guide surface 122.

The magnetic pole unit 118, the magnetic member 99, the electromagnets 92E to 92H, the iron pieces 94E to 94H, and the gas static pressure bearing device 108 make the wafer table T
A support device 112B (see FIG. 15) configured to support B2 in a non-contact manner above the second stage main body ST2 is configured.
This support device 112B is configured and functions similarly to the above-described support device 112A.

The supporting device 1 is formed by electromagnets 92E to 92H and opposing iron pieces 94E to 94H.
12B constitutes a Z leveling drive device 116B (see FIG. 15) that minutely drives the wafer table TB2 supported in a non-contact manner on the second stage main body ST2 in the Z direction and the tilt direction (θx, θy direction) with respect to the XY plane. ing. This Z-leveling drive device 116B is the same as the Z-level drive described above.
It is configured and functions similarly to the leveling drive 116A.

The magnetic pole unit 118 and the armature unit 120 form a flat motor 110B similar to the flat motor 110A described above (see FIGS. 13 and 15). An XY driving device for driving the wafer table TB2 supported in a non-contact manner on the second stage main body ST2 by the support device 112B by the planar motor 110B in the XY plane is configured. The support device 112B, the Z leveling drive device 116B, and the planar motor 110B constitute a support / fine movement system 91B (see FIG. 15). The support / fine movement system 91B is controlled by the stage controller 38 in accordance with an instruction from the main controller 16 (see FIG. 15).

In the present embodiment, the second stage main body ST2
The second stator similar to the above-described first stator is configured by the electromagnets 92E to 92H and the armature unit 120 provided in the first stator. Also, the iron pieces 94E to 94E provided on the wafer table TB2 and can cooperate with the electromagnets 92E to 92H and the armature unit 120 as described above.
The 4H and the magnetic pole unit 118 constitute a second movable element similar to the first movable element described above. Then, the wafer table TB2 is brought into non-contact on the second stage main body ST2 by the second stators (92E to 92H, 120), the second movers (94E to 94H, 118), and the gas static pressure bearing device 108. And the wafer table TB2 with respect to the second stage main body ST2 by X,
A supporting / driving system 91B that minutely drives in six degrees of freedom directions of Y, θz, Z, θx, and θy is configured.

As described above, in the present embodiment, the first movers (94A to 94D and 106) and the second movers (94E to 94E) are used.
4H, 118) are similarly configured, and the first stator (92
A to 92D, 100) and the second stator (92E to 92H,
120) are similarly configured. Therefore, the first mover can cooperate not only with the first stator but also with the second stator, and similarly, the second mover can cooperate with not only the second stator but also the first stator. Collaboration is possible. Therefore, the first
The wafer table TB2 is supported above the stage body ST1 in a non-contact manner in the same manner as described above, and can be finely driven in six degrees of freedom.
2, the wafer table TB1 is supported in a non-contact manner in the same manner as described above, and can be finely driven in six directions of freedom.

[0143] Wafer table TB1, wafer table T
Each of the movable mirrors 102a to 102 provided on B2
The outer surface side of f is a mirror-finished reflection surface. As shown in FIG. 2, interferometer beams of respective measurement axes constituting first and second interferometer systems described later are projected onto these reflecting surfaces, and the reflected light is received by each interferometer. Thus, the displacement from the reference position of each reflection surface (generally, a fixed mirror is arranged on the side of the projection optical system or the side of the alignment optical system and the reference mirror is used as a reference surface) is measured. Each two-dimensional position of TB2 is measured. Note that the first and second
The configuration of the measurement axis of the interferometer system will be described later in detail.

Returning to FIG. 1, an off-axis type mark detection system is provided at a position that is a predetermined distance away from the optical axis center of the projection optical system PL (coincident with the projection center of the reticle pattern image) on the + X side. The alignment optical system ALG is installed. This alignment optical system ALG is LS
A (Laser Step Alignment) system, FIA (Filed Image)
Alignment) system, LIA (Laser Interferometric Alig)
nment) -based alignment sensor, and can measure the position of the reference mark on the reference mark plate and the alignment mark on the wafer in the X and Y two-dimensional directions.

Here, the LSA system is the most versatile sensor that irradiates a mark with a laser beam and measures the position of the mark by using the diffracted and scattered light. Is done. The FIA system is a sensor that illuminates a mark with broadband (broadband) light such as a halogen lamp and measures the mark position by processing the mark image, and is used effectively for an asymmetric mark on an aluminum layer or a wafer surface. You. In addition, LIA system
A sensor that irradiates a diffraction grating mark with laser light whose frequency is slightly changed from two directions, interferes the two generated diffraction lights, and detects mark position information from its phase. Used effectively for rough wafers.

In the present embodiment, these three types of alignment sensors are properly used according to the purpose, and so-called search alignment for detecting the positions of three one-dimensional marks on the wafer and measuring the approximate position of the wafer, Fine alignment or the like for performing accurate position measurement of each shot area on the wafer is performed.

Information from each alignment sensor constituting the alignment optical system ALG is A / D converted by an alignment control unit 136 (see FIG. 15), and a digitized waveform signal is subjected to arithmetic processing to detect a mark position. Is done. The result is sent to the main controller 16, and the main controller 16 instructs the stage controller 38 to correct the synchronous position at the time of exposure according to the result.

Further, in the exposure apparatus 10 of the present embodiment,
Although not shown in FIG. 1, a reticle mark (not shown) on the reticle R via the projection optical system PL and a reference above the reticle R are disclosed in, for example, Japanese Patent Application Laid-Open No. 7-176468. TTR using exposure wavelength for simultaneously observing marks on mark plates FM1 and FM2
(Through The Reticle) A pair of reticle alignment microscopes 138A and 138B each including an alignment optical system.
(See FIG. 15). The detection signals of these reticle alignment microscopes 138A and 138B are supplied to main controller 16 via alignment controller 136.

Next, the first and second interferometer systems 140A and 140 for managing the positions of the wafer tables TB1 and TB2.
OB (see FIG. 15) will be described with reference to FIGS. 1, 2, and 14. FIG.

As shown in FIG. 14, the first interferometer system 140A includes an X-axis interferometer 32 arranged at a predetermined distance from the projection optical system PL on the −X side, and a projection optical system PL. And a Y-axis interferometer 33 arranged at a predetermined distance on the + Y side.

The second interferometer system 140B is separated from the X-axis interferometer 34 located at a predetermined distance on the + X side of the alignment optical system ALG and from the + Y side of the alignment optical system ALG by a predetermined distance. And a Y-axis interferometer 35 arranged at the position.

These interferometers 32-35 are actually
Alignment optical system ALG arranged in chamber 42
Are suspended and supported by a support member (not shown) that supports the like.

The first interferometer system 140A includes a first
This is for measuring the positions of the wafer tables TB1 and TB2 supported on the stage main body ST1 as described above and moving in the XY plane integrally with the first stage main body ST1. As shown in FIG. 14, the X-axis interferometer 32 constituting the interferometer system 140A has a length measurement axis in the X-axis direction passing through the projection center of the projection optical system PL (and the detection center of the alignment optical system ALG). BI1X.
Further, the Y-axis interferometer 33 has a length measurement axis B in the Y-axis direction perpendicular to the length measurement axis BI1X at the projection center of the projection optical system PL.
I1Y.

The second interferometer system 140B is supported on the second stage main body ST2 as described above, and moves the wafer tables TB1 and TB2 that move integrally in the XY plane with the second stage main body ST2. It is for measuring. As shown in FIG. 14, the X-axis interferometer 34 constituting the interferometer system 140B has a length measurement axis BI2X in the X-axis direction passing through the detection center of the alignment optical system (and the projection center of the projection optical system PL). have. Further, the Y-axis interferometer 35 has a length measuring axis BI2Y that vertically intersects the length measuring axis BI2X at the detection center of the alignment optical system ALG.

FIG. 2 shows a state where alignment is performed on wafer W2 on wafer table TB2 while exposure is performed on wafer W1 on wafer table TB1. Have been. At this time, the interferometer 32 is attached to the X movable mirror 102a on the wafer table TB1.
Irradiates an interferometer beam passing through the projection center (ie, optical axis AX) of the projection optical system PL indicated by the length measurement axis BI1X, and similarly, the X moving mirror 102 on the wafer table TB2.
In d, the detection center of the alignment optical system ALG indicated by the measurement axis BI2X from the interferometer 34 (that is, the optical axis SX)
Through the interferometer beam. Then, the interferometers 32 and 34 receive these reflected lights,
The relative displacement of each movable mirror from the reference position is measured, and the positions of the wafer tables TB1 and TB2 in the X-axis direction are measured. Here, the interferometers 32 and 34 are actually
As shown in FIG. 2, this is a three-axis interferometer having three optical axes, and is capable of measuring tilt and yawing amount (θz rotation) in addition to measuring the positions of wafer tables TB1 and TB2 in the X-axis direction. It has become. The output value of each optical axis can be measured independently.

In the state of FIG. 2, the wafer table T
The Y measuring mirror 102c on B1 is moved from the interferometer 33 to the measurement axis B
An interferometer beam passing through the projection center (that is, the optical axis AX) of the projection optical system PL indicated by I1Y is irradiated, and the Y moving mirror 102f on the wafer table TB2 is aligned by the interferometer 35 with the alignment measurement axis BI2Y. An interferometer beam passing through the detection center (that is, the optical axis SX) of the optical system ALG is irradiated. Then, the interferometers 33 and 35 receive the reflected light to measure the relative displacement of each movable mirror from the reference position, and to measure the positions of the wafer tables TB1 and TB2 in the Y-axis direction. . It should be noted that the interferometer 3 having the measurement axes BI1Y and BI2Y, respectively.
Reference numerals 3 and 35 denote two-axis interferometers each having two optical axes,
In addition to the measurement of the wafer tables TB1 and TB2 in the Y-axis direction, tilt measurement is possible. The output value of each optical axis can be measured independently.

In the exposure apparatus 10 of the present embodiment, as will be described later, the wafer table TB1 and the wafer table TB
2, the positions of the wafer table TB2 to be exposed are measured by the interferometers 32 and 33 having the measurement axes BI1X and BI1Y, respectively, similarly to the above. The position of the wafer table TB1 on which the alignment is performed is determined by the interferometers 34 and 35 having the measurement axes BI2X and BI2Y, respectively.
Is measured by

Therefore, in the present embodiment, accurate position measurement of the wafer tables TB1 and TB2 is performed without any so-called Abbe error during both exposure and alignment.

The first and second interferometer systems 140A,
The measurement values of the respective measurement axes of the interferometers 32 to 35 constituting 140B are supplied to the stage control device 38 and the main control device 16 via the stage control device 38. According to the wafer table TB
1, TB2 (that is, the movement of the first and second stage bodies ST1 and ST2 supporting these wafer tables) is managed.

FIG. 15 shows an exposure apparatus 1 according to this embodiment.
0 shows the main configuration of the control system. The control system includes a main control device 16 that controls the entire device as a whole, and
The stage controller 3 under the control of the main controller 16
8, the alignment control device 136 and the like are mainly configured.

Here, the operation of the exposure apparatus 10 according to the present embodiment will be described focusing on the operation of each of the components of the control system.
The operation at the time of AND scan exposure will be described.

First, in the stage controller 38, the interferometer 33 having the length measuring axis BI1Y of the first interferometer system 140A and the length measuring axis BI1X in response to a command given from the main controller 16 based on the alignment result. Stage main body ST supporting wafer table TB1 (or TB2) while monitoring the measurement value of interferometer 32 having
The Y-axis linear motor 114A and the X-axis linear motors 66A and 66B constituting the first drive system are controlled to set the wafer table TB1 (or TB2) at the scan start position for exposing the first shot of the wafer W1 (or W2). To move.

Next, in the stage controller 38, the reticle R and the wafer W1 (or W2), that is, the reticle stage RST and the wafer table TB1 (or TB2) in the Y-axis direction in accordance with the instruction of the main controller 16. Scanning is started, and reticle stage RST and wafer table TB1
When (or TB2) reaches the respective target scanning speeds and reaches the constant speed synchronization state, the pattern area of the reticle R starts to be illuminated by the ultraviolet pulse light from the illumination system unit ILU, and scanning exposure is started. The relative scanning is performed by the stage controller 38 using the first interferometer system 14 described above.
0A measuring axis BI1Y and measuring axis BI1X and reticle interferometer system measuring axis BI7Y, BI8Y and measuring axis BI
This is performed by controlling the reticle driving unit 26 and the linear motors 114A, 66A, 66B constituting the driving system of the first stage main body ST1 while monitoring the measurement value of 6X.

Prior to the start of the scanning exposure, reticle stage RST and wafer table TB1 (or TB2)
At the point in time when the respective target scanning speeds are reached, the main controller 16 gives an instruction to the laser controller 18 to start pulse emission, but the stage controller 38 uses a blind drive device (not shown) via a blind drive device. Lighting unit IL
Since the movement of the predetermined blade of the movable reticle blind in the U is controlled in synchronization with the movement of the reticle stage RST, the irradiation of the ultraviolet pulse light to the outside of the pattern area on the reticle R is blocked by the ordinary scanning.・ Same as stepper.

In the stage controller 38, the moving speed Vr of the reticle stage RST in the Y-axis direction and the moving speed Vw of the wafer table TB1 (or TB2) in the Y-axis direction are projected by the projection optical system PL, particularly during the above-described scanning exposure. Magnification (1 /
Reticle driving section 26 and first stage main body ST1 so as to maintain the speed ratio according to (4 times or 1/5 times).
Reticle stage RST and wafer table TB1 (or TB
2) is controlled synchronously.

Then, different regions of the pattern region of the reticle R are sequentially illuminated with the ultraviolet pulse light, and the illumination of the entire pattern region is completed, thereby completing the scanning exposure of the first shot on the wafer W1 (or W2). . Thereby, the pattern of the reticle R is reduced and transferred to the first shot via the projection optical system PL.

In a blind driving device (not shown),
Based on an instruction from the stage control device 38, the predetermined blade of the movable reticle blind is moved by moving the reticle stage RST to block the irradiation of the ultraviolet pulse light to the outside of the pattern area on the reticle R immediately after the end of the scanning exposure. And synchronized control.

When the scanning exposure of the first shot is completed as described above, based on an instruction from main controller 16,
The first stage main body ST1 is controlled by the stage control device 38.
Linear motors 114A, 66A, 6
The wafer table TB1 (or TB2) is step-moved in the X and Y-axis directions via 6B, and moved to a scanning start position for exposure of the second shot. At the time of this stepping, the stage controller 38 controls the X of the wafer table TB1 (or TB2) based on the measured values of the interferometers 33 and 32 having the length measuring axes BI1Y and BI1X of the first interferometer system 140A, respectively. , Y and θz directions are measured in real time. Based on this measurement result,
The stage control device 38 controls the position of the wafer table TB1 (or TB2) so that the XY position displacement of the wafer table TB1 (or TB2) becomes a predetermined state.
In the stage control device 38, the wafer table TB1
The reticle driving unit 26 is controlled based on the information on the displacement in the θz direction (or TB2), and the rotation of the reticle stage RST (reticle fine movement stage) is controlled so as to compensate for the rotational displacement error on the wafer side.

Then, in response to an instruction from main controller 16,
The operation of each unit is controlled by the stage controller 38 and the laser controller 18 in the same manner as described above, and the wafer W1 (or W
2) Scanning exposure similar to the above is performed on the upper second shot.

Thus, wafer W1 (or W2)
The scanning exposure of the upper shot and the stepping operation for the next shot exposure are repeatedly performed, and the pattern of the reticle R is sequentially transferred to all the exposure target shots on the wafer.

During the above-mentioned scanning exposure, main controller 16 determines the values of Z, θx, and θx of wafer table TB1 (or TB2) based on the detection result of multipoint focus position detection system AF.
The target value of θy is calculated and given to the stage controller 38. The stage control device 38 controls the Z-leveling drive mechanism 116A constituting the support / fine movement system 91A to perform Z-leveling control of the wafer table TB1 (or TB2), thereby exposing the wafer W1 (or W2). The region is made to coincide with the imaging plane of the projection optical system PL. That is, focus leveling control is performed in this manner.

The control of the integrated exposure amount to be given to each point on the wafer during the scanning exposure is performed by the main controller 16 via the laser controller 18 or the stage controller 38 to control the light source (not shown). Controlling at least one of an oscillation frequency (pulse repetition frequency), pulse energy per pulse output from a light source, a dimming rate of a dimming unit in an illumination unit, and a scanning speed between a wafer table and a reticle stage. It is performed by

Further, when correcting the movement start position (synchronous position) of the reticle stage and the wafer table at the time of scanning exposure, the main controller 16 instructs the stage controller 38 to adjust the reticle stage and the wafer in accordance with the correction amount. Instructs correction of the position with the table.

Next, referring to FIGS. 14, 16 (A), (B), FIGS. 17 (A), (B), and FIGS. 18 (A), (B), two wafer tables are used. Will be described. As described above, the transfer arm mechanisms 80A and 80B include a slider portion 82 that moves in the X-axis direction, a pair of expansion and contraction portions 84A and 84B that are provided at the tip thereof and extend and contract in the Y-axis direction, And a transfer arm 86 provided at the tip of each of the sections 84A and 84B.
Only the transfer arm 86 can move in the Y two-dimensional direction, but in the following description, it is assumed that the transfer arm mechanisms 80A and 80B move in the two-dimensional direction for convenience. That is, each transfer arm 86
Of the transfer arm mechanism 80A, 8A
The expression that 0B moves in the ± Y direction is used.

FIG. 16A shows wafer table TB1.
The exposure operation is performed on the upper wafer W1 via the projection optical system PL as described above, and in parallel with this, the alignment optical system A is mounted on the wafer W2 on the wafer table TB2.
After performing wafer alignment using LG (this will be further described later), wafer table TB1 is moved to the exposure reference position, and wafer table TB2 is positioned at the alignment reference position. Here, the exposure reference position is a reference mark plate FM1 (or FM2) on the wafer table TB1 (or TB2).
Refers to a position where is positioned at the projection position of the reticle pattern image. The alignment reference position is a reference mark plate FM2 (or FM1) on the wafer table TB2 (or TB1) immediately below the alignment optical system ALG.
This is a position where the upper first reference mark (not shown) comes.

In the state shown in FIG. 16A, the position of wafer table TB1 is adjusted by stage controller 38 to interferometer 32 having length measuring axes BI1X and BI1Y, respectively.
33 based on the measured values of the measurement axes BI1X and BI
1Y (hereinafter, referred to as “stage coordinate system during exposure”). The position of the wafer table TB2 is determined by the stage control device 38 by the interferometers 34, 3 having the measurement axes BI2X and BI2Y, respectively.
5, the measurement axis BI2X and the measurement axis BI2
The coordinate system is controlled on a coordinate system using Y (hereinafter, referred to as “alignment stage coordinate system”).

Next, in response to the instruction from the main controller 16, the stage controller 38 moves the transfer arm mechanism 80B which is waiting at the position shown by the solid line in FIG. Is driven in the + Y direction to hold the wafer table TB1 (adsorb it by the electromagnet). At the same time, the stage control device 38 turns off the electromagnets 92A to 92D on the first stage main body ST1 and turns off each linear motor constituting the drive system of the first stage main body ST1. Thereby, the first stage main body S
T1 remains at the first position corresponding to that position (that is, the above-described exposure reference position).

Next, the stage control device 38 controls the transfer arm mechanism 80B in response to an instruction from the main control device 16.
As shown by an arrow A ′ in FIG. 16A, driving is performed by a predetermined amount in the −Y direction. Thereby, the transfer arm mechanism 80B
The wafer table TB1 holding the exposed wafer W1 is transported to the position shown in FIG.
During this time, the positioning state of wafer table TB2 at the alignment reference position is maintained.

Next, the stage controller 38 controls the transfer arm mechanism 80B according to the instruction from the main controller 16.
Driving is performed in the + X direction as indicated by an arrow B in FIG. As a result, the wafer table TB1 is transported by the transport arm mechanism 80B toward a predetermined loading position (wafer replacement position). At the same time, the stage control device 38 controls the transfer arm mechanism 8
0A is driven in the + X direction.

FIG. 17A shows a state immediately after wafer table TB1 is moved to the loading position. At this time, the transfer arm mechanism 80A has moved to a position shown in FIG. 17A at a predetermined distance in the −Y direction of the wafer table TB2 at the alignment reference position. During this time, the positioning state of wafer table TB2 at the alignment reference position is maintained.

Next, the stage controller 38 moves the transfer arm mechanism 80A to hold the wafer table TB2 in response to an instruction from the main controller 16, as shown by an arrow C in FIG. Drive in + Y direction. At the same time, the stage control device 38 turns off the electromagnets 92E to 92H on the second stage main body ST2 and turns off each linear motor forming the drive system of the second stage main body ST2. Thereby, the second stage body S
T2 remains at the second position corresponding to that position (ie, the above-described alignment reference position).

In FIG. 17B, as described above, the transfer arm mechanism 80A is driven in the + Y direction as shown by the arrow C, and immediately after holding the wafer table TB2 holding the aligned wafer W2. Is shown. At this time, the wafer loader 50 has already started replacing the wafer on the wafer table TB1 at the loading position.

Next, in the stage controller 38, the transfer arm mechanism 80A is driven in the -X direction as shown by the arrow D in FIG. 17B. As a result, the wafer stage TB2 is brought to the first position by the transfer mechanism 80A, and stays at the first position.
Is transported upward. During this conveyance, the interferometer beams from the interferometers 34 and 35 indicated by the measurement axis BI2Y come off the movable mirrors 102f and 102d.
Further, when the transport mechanism 80A moves in the −X direction, at some point, the interferometer beam from the interferometer 33 indicated by the length measurement axis BI1Y hits the movable mirror 102f. At this time, the interferometer beam indicated by the measurement axis BI1X from the interferometer 32 has already hit the movable mirror 102e. Therefore, in the stage control device 38, the first interferometer system 1
The interferometers 32 and 33 constituting 40A are reset. Thereafter, when the transport mechanism 80A further moves in the −X direction, the wafer table TB2 moves the first position at the first position.
It is roughly positioned above the stage main body ST1. Then, by operating the support / fine movement system 91A described above, the wafer table TB2 is supported on the first stage main body ST1 in a non-contact manner. Here, the accuracy of the rough positioning is determined by the accuracy of the transport mechanism 80A, and is, for example, approximately several microns.

FIG. 18A shows a state where wafer table TB2 is roughly positioned above first stage main body ST1 as described above. At this time, on the wafer table TB1, as shown in FIG. 18A, the wafer exchange has been completed and the unexposed wafer W3 has been loaded.

Next, in response to an instruction from main controller 16, stage controller 38 turns off the electromagnet of transfer arm mechanism 80A to release the holding of wafer table TB2, and moves transfer arm mechanism 80A to the position shown in FIG. (A) moves in the −Y direction as indicated by an arrow F in FIG. At the same time, the stage control device 38 controls the transfer arm mechanism 80
B to drive the wafer table T for which the wafer exchange has been completed.
The transport of B1 is started in the direction indicated by arrow E in FIG. Thus, wafer table TB1 is transported upward from second stage main body ST2 at the second position corresponding to the alignment reference position.

As described above, the wafer table T
In a state immediately after being supported on the first stage main body ST1, B2 may be displaced within a range of about ± several microns from an intended position. Therefore, the stage control device 38 drives the planar motor 110A constituting the support / fine movement system 91A described above, corrects the positional deviation, and moves the wafer table TB2 to the desired position on the first stage main body ST1 accurately. Position. At this time, the position of the wafer table TB2 is managed on the stage coordinate system at the time of exposure by the stage control device 38 based on the measurement values of the interferometers 32 and 33 constituting the first interferometer system 140A reset earlier. I have. At this time, wafer table TB2 is in a state of being positioned at the exposure reference position.

Therefore, main controller 16 uses a pair of reticle alignment microscopes 138A and 138B (see FIG. 15) to expose a pair of second reference marks on reference mark plate FM2 and a corresponding mark on the reticle using exposure light. The relative position of the projected image on the wafer surface is detected, that is, the image signal of each mark image is captured by a reticle alignment microscope.

Thus, the coordinate positions of the pair of second reference marks on the reference mark plate FM2 in the coordinate system (stage coordinate system at the time of exposure) using the measurement axes BI1X and BI1Y,
The coordinate position of the projected image on the wafer surface of the mark on the reticle R is detected, and the exposure position (the projection center of the projection optical system PL) and the coordinate position of the pair of second reference marks on the reference mark plate FM2 are determined by the difference between the two. Is determined.

At this time, a wafer table TB1 described later is used.
As in the case of the upper wafer W3, the relative positional relationship of each shot on the wafer W2 with respect to the first reference mark on the reference mark plate FM2 is previously determined at the time of alignment. Therefore, main controller 16 determines the relative positional relationship of each shot on wafer W2 with respect to the previously obtained first reference mark on reference mark plate FM2, and the exposure position and a pair of second reference marks on reference mark plate FM2. Finally, the relative positional relationship between the exposure position and each shot is calculated from the relative positional relationship with the coordinate position.

Reference mark plate F on wafer table TB2
While the relative positional relationship between the coordinate positions of the pair of second reference marks on M2 is being detected, the wafer table TB1 is detected.
Is moved toward the second position as described above, and during this movement, the interferometer beams from the interferometers 34 and 35 constituting the second interferometer system 140B are moved by the movable mirrors 102b and 102b.
02c. Therefore, the stage controller 38 responds to an instruction from the main controller 16 and
With both interferometer beams hit, the interferometers 34 and 35 are reset. Then, as shown in FIG. 18B, wafer table TB1 is roughly positioned above second stage body ST2 at the second position. By operating the support / fine movement system 91B described above, the wafer table TB1 is moved to the second stage main body S.
It is supported on T2 in a non-contact manner. Here, the accuracy of the rough positioning is determined by the accuracy of the transport mechanism 80B, and is, for example, approximately several microns.

Thereafter, based on the above calculation result, main controller 16 gives an instruction to stage controller 38 in the same manner as in the case of wafer W1 described above, and performs an exposure for a shot area on wafer W2. Each time the exposure of each shot area is performed, the reticle stage RST and the wafer table TB are positioned while sequentially positioning the wafer table TB2 at the scanning start position.
By performing relative scanning in the scanning direction in synchronism with step 2, scanning exposure is performed.

While the exposure of wafer W2 on wafer table TB2 is being performed in this manner, stage controller 38 responds to the instruction from main controller 16 according to the instruction from main controller 16.
The electromagnet of the transfer arm mechanism 80B is turned off to release the holding of the wafer table TB1, and the transfer arm mechanism 80B is moved to -Y as shown by an arrow G in FIG.
Move in the direction.

By the way, as described above, the wafer table T
Immediately after being supported on the second stage main body ST2, B1 may be displaced within a range of about ± several microns from the intended position. Therefore, the stage control device 38 drives the planar motor 110B constituting the above-described support / fine movement system 91B, corrects the positional deviation, and accurately moves the wafer table TB1 to the intended position of the second stage main body ST2. Position. At this time, the position of wafer table TB1 is controlled by stage control device 38.
It is managed on the stage coordinate system at the time of alignment based on the measurement values of the interferometers 34 and 35 constituting the second interferometer system 140B that has been reset earlier. At this time,
Wafer table TB2 is positioned at a reference position during alignment. The state at this time is shown in FIG.

When wafer table TB2 is positioned at the alignment reference position shown in FIG. 19, under the control of main controller 16, the first reference mark on reference mark plate FM1 is detected. When detecting the first fiducial mark, an image of the first fiducial mark is captured by the FIA sensor of the alignment optical system ALG, and the image signal is sent to the alignment control device 136. The alignment control device 136 performs predetermined processing on the image signal and analyzes the processed signal to detect the position of the first reference mark with respect to the index center of the FIA sensor of the alignment optical system ALG. In the main controller 16, the position of the first fiducial mark and the length measurement axes BI2X, BI2
The coordinate position of the first reference mark on the reference mark plate FM1 in the stage coordinate system at the time of alignment using the measurement axes BI2X and BI2Y is calculated based on the measurement results of the interferometers 34 and 35 each having 2Y. During this time, the exposure operation is continued on the wafer table TB2 side.

Subsequently, search alignment is performed on wafer table TB1 prior to fine alignment described later. The search alignment is a pre-alignment performed again on the wafer table TB2 because a positional error is large only by the pre-alignment performed during the transfer of the wafer W3. Specifically, the positions of three search alignment marks (not shown) formed on the wafer W3 placed on the wafer table TB1 are measured using an LSA system sensor or the like of the alignment optical system ALG, Based on the measurement result, the displacement of the wafer W3 in the X, Y, and θz directions is measured. The operation of each part during this search alignment is performed by the main controller 16
Is controlled by

After completion of the search alignment, fine alignment for obtaining the arrangement of each shot area on wafer W3 using EGA here is performed. Specifically, while managing the position of the wafer table TB1 based on the measurement values of the interferometers 34 and 35 having the measurement axes BI2X and BI2Y, respectively, the shot array data (alignment mark position data) based on the design is used. Then, while sequentially moving the wafer table TB1, the alignment mark position of a predetermined sample shot on the wafer W3 is measured by a FIA sensor or the like of the alignment optical system ALG, and the measurement result and the design coordinate data of the shot array are calculated. All shot array data is calculated by statistical calculation based on the least squares method based on the data. Thereby, the coordinate position of each shot is calculated on the stage coordinate system at the time of the alignment. The operation of each unit during the EGA is controlled by main controller 16, and the above calculations are performed by main controller 16.

Then, main controller 16 calculates the relative positional relationship of each shot with respect to the first reference mark by subtracting the coordinate position of the first reference mark from the coordinate position of each shot.

While the above alignment operation is being performed on wafer table TB1 side, the above-described exposure operation is continued on wafer table TB2 side, as in the case of FIG. While alignment and exposure are being performed on both wafer tables TB1 and TB2, the stage control device 38 moves the transfer arm mechanisms 80A and 80B to the standby positions indicated by solid lines in FIG.

The two wafer tables TB2 and T
The exposure operation (exposure sequence) and the alignment operation (alignment sequence) on B1 are in a waiting state with the previously completed wafer table moved to the respective reference positions, and when both operations are completed, The movement of the wafer table TB2 to the loading position and the movement of the wafer table TB1 to the exposure reference position described above are started. Thereafter, as described above, the two wafer tables TB1 and TB2 are independently moved to two. The parallel processing of the exposure sequence for the wafer on one wafer table and the wafer exchange and alignment sequence for the other wafer is repeatedly performed while moving in the dimensional direction.

In this embodiment, as described above, the interferometer is reset during a series of sequences from the alignment sequence to the exposure sequence. However, when exposing each shot area on the wafer, the reticle pattern And the shot areas on the wafer can be superposed with high accuracy. The reason is that the alignment optical system ALG uses the reference mark plate FM2 (or FM1).
After measuring the above first fiducial mark, by measuring the alignment mark of each shot area on the wafer W2 (or W1 or W3), the distance between the fiducial mark and the virtual position calculated by the measurement of the wafer mark is determined. Since the same sensor is used to calculate the relative positional relationship (relative distance) between the reference mark and the position to be exposed at this time, the correspondence between the exposure position and the reference mark position is determined by a reticle alignment microscope before exposure. If the value is taken, the relative distance is added to the value, so that a high-precision exposure operation can be performed even if the interferometer beam of the interferometer is cut off during the movement of the wafer stage and reset is performed. .

In the exposure apparatus 10 according to the present embodiment, the parallel processing using the wafer table TB1 and the wafer table TB2 described above significantly increases the throughput as compared with the case where the wafer exchange → alignment → exposure → wafer exchange is performed sequentially. Can be improved.

In this case, the stage device 12 constituting the exposure apparatus 10 according to the present embodiment, as described above, generates the other wafer by the reaction force accompanying the movement of the stage body that moves integrally with one wafer table. Since the table is not affected, the operation performed on one wafer table does not adversely affect the operation performed on the other wafer table as a disturbance factor. Therefore, in the present embodiment, the pattern of the reticle can be accurately transferred onto the wafer in any of the wafer tables TB1 and TB2 without being affected by the operation of the other wafer table. Therefore, in this embodiment,
Among the operations to be performed in parallel, it is not necessary to adjust the timing of each operation so that operations that cause disturbance or operations that do not cause disturbance are performed simultaneously.

As described in detail above, according to the stage device 12 of the present embodiment, the first stage main body ST
Wafer table TB1 (or TB
2) can be supported in a non-contact manner by the support / fine movement system 91A, and can be driven (finely driven) relative to the first stage main body ST1 in directions of six degrees of freedom. Thus, after the wafer table TB1 (or TB2) is supported by the first stage main body ST1, the positional relationship between the two can be adjusted to a desired positional relationship. Further, the wafer table TB1 (or TB2) is connected to the first stage main body ST.
By moving the wafer table TB1 (or TB2) relative to the first stage main body ST1 in a predetermined direction by the support and fine movement system 91A while moving integrally with the wafer table TB1 (or TB2). ) Position and orientation control becomes possible.

Therefore, wafer table TB1 (or TB
2) and the first stage body ST1 are detachable (separable)
, The wafer table TB1 (or T
It is possible to adjust the relative positional relationship between B2) and the first stage main body ST1.

Further, according to the stage device 12 of the present embodiment, as described above, alignment and exposure are performed in different places in parallel using the wafer table TB1 and the wafer table TB2. After the exposure on the wafer is completed, the exposure on the other wafer whose alignment has been completed can be started. As a result, it is possible to take a step forward in realizing a next-generation exposure apparatus capable of performing high-throughput and high-accuracy exposure.

Further, according to one of the supporting / fine movement systems 91A constituting the stage device 12, the transfer of the wafer table TB1 (or TB2) to the first stage main body ST1 can be realized in a non-contact manner. There is almost no wafer table TB1 at that time.
(Or TB2) can be prevented from being displaced. This is because the other support / fine movement system 91B
But the same is true.

Also, one support / fine movement system 91A
Can tilt the wafer table TB1 (or TB2) in the directions of inclination (θx, θy directions) with respect to the moving surface of the first stage main body ST1 and the direction (Z direction) perpendicular to the moving surface, so that Z-tilt (leveling) can be performed. There is no need to provide a separate mechanism. In addition, this support / fine movement system 91A
Since the wafer table TB1 (or TB2) can be finely driven in a predetermined direction (X, Y, θz directions) within the movement plane of the first stage main body ST1, the first position of the wafer table TB1 (or TB2) can be adjusted in a rough positioning state. Stage body S
Even if it is supported by T1, the position can be adjusted thereafter.
Therefore, the wafer table TB1 (or TB2) is
It is possible to reduce the time required for delivery when supporting the stage main body ST1. Further, as the transport mechanism for that purpose, a mechanism having rough positioning accuracy such as the above-described transport arm mechanism can be used. These points are the same in the other support / fine movement system 91B.

According to the stage device 12 of the present embodiment, the first movers (94A to 94D, 106) provided on the wafer table TB1 are connected to the first stage main body ST1.
The first stator (92A to 92D, 100) provided in
The second stator (92
E to 92H, 120) and the second mover (9) provided on the wafer table TB2.
4E to 94H, 118) can cooperate with both the first stator and the second stator. For this reason, while one of the wafer tables is two-dimensionally moved integrally with the first stage main body ST1, it is slightly driven relative to the first stage main body in a predetermined direction, and is placed on the one wafer table. In parallel with performing a predetermined process on the placed wafer, the other wafer table is moved by the transfer system 190 to the second wafer table.
When the wafer is conveyed above the stage main body ST2 and the other wafer table is supported on the second stage main body ST2 and a predetermined process is performed on a wafer on the other wafer table, the other wafer table is passed through the other wafer table. It is possible to adjust the position of the wafer with respect to the second stage main body ST2. Therefore, it is possible to perform an alignment operation on the wafer on the other wafer table in parallel with the exposure operation on the wafer on the one wafer table.

In this case, the first stage main body ST1 and the second
Even if the stage main body ST2 is installed on an independent stage base (stage base), no inconvenience occurs.
For this reason, each stage base can be reduced in size, and even if two wafers placed on wafer tables TB1 and TB2 are separately processed at the same time, the operation of one of the wafer tables TB1 and TB2 can be performed. An adverse effect on the other wafer table can be prevented.

Therefore, the two wafer tables TB1, T2
Simultaneous parallel processing of exposure and wafer exchange / alignment on a wafer on B2 can be performed without the adverse effect of operation of one wafer table on objects on the other wafer table.

In the present embodiment, the wafer table T
B1 and TB2 have movable mirrors 102a to 102c and 102, respectively.
d to 102f, respectively, and the first stage body S
A first interferometer system 140A that receives reflected light from a moving mirror of one of the wafer tables supported on T1 and measures the position of the wafer table, and one supported on the second stage body ST2. And a second interferometer system 140B for receiving the reflected light from the moving mirror of the wafer table and measuring the position of the wafer table. Therefore, the first interferometer system 140A and the second
First stage body ST by interferometer system 140B
1 and the wafer table supported on the second stage body ST2, respectively, can be measured with a resolution of, for example, about 0.5 to 1 nm. The processing on the wafer and the processing on the wafer on the wafer table TB2 can be performed in parallel while controlling the positions of the wafer tables with high accuracy.

A transport system 190A (80A, 80B, 88, 90) for transporting wafer tables TB1, TB2, which is different from the drive system of first and second stage bodies ST1, ST2.
And a first and second interferometer system 140
Since the above-described contrivance has been made so that inconvenience does not occur even if the interferometers of the length measuring axes A and 140B are reset, the wafer tables TB1 and TB2 and the first and second stage main bodies ST1 are consequently obtained. , ST2 can be reduced to a size slightly larger than the wafer. This allows
The position controllability of the wafer table can be improved.

The stage device 12 according to the present embodiment
As described above, in each place, a vacuum preload-type gas static pressure bearing device is used. However, as the bearing device, an exhaust groove communicating with a vacuum exhaust path around a pressurized gas outlet on a bearing surface is used. In the case of using the type having the above, since the gas ejected from each bearing device to the guide surface is immediately evacuated and exhausted, it is possible to prevent the gas from leaking to the surroundings. Therefore, as in the present embodiment, the purity of helium or the like must be kept high, and it is suitable for use in a special environment such as an environment where the outflow of gas does not contaminate the surrounding gas or an ultra-high vacuum environment. Also suitable.

According to the exposure apparatus 10 of the present embodiment, as described above, the projection optical system PL performs the exposure operation on the wafer on the wafer table TB1 (or TB2) supported on the first stage main body ST1 in parallel with the exposure operation. And a wafer table TB2 supported on the second stage body ST2
It becomes possible to detect (align) the mark on the mark on (or TB1), for example, the mark on the wafer, by the alignment optical system ALG, and it is possible to improve the throughput by such simultaneous and parallel processing.
In this case, only the wafer table on which the wafer for which the mark detection has been completed is placed from the alignment position (the position below the mark detection system) to the exposure position (the position below the exposure optical system). Conveyed on ST2,
Only the wafer table on which the exposed wafer is placed can be transferred from the exposure position to the substrate exchange position and the alignment position. Therefore, there is no need to move the second stage main body ST2 to the exposure position, or to move the first stage main body ST1 to the alignment position. Therefore, each stage main body can be installed completely independently. Therefore, in parallel with performing exposure on a wafer on one wafer table and performing wafer exchange / alignment on the other wafer table, one of the wafer tables supports and moves integrally with the one wafer table. Since the operation of the stage main body does not adversely affect the other wafer table supported by the other stage main body and integrally moving, alignment accuracy and exposure accuracy can be improved.

In this embodiment, since the exposure is performed using the ultraviolet pulse light in the vacuum ultraviolet region as the illumination light for exposure, it is possible to transfer a fine pattern onto the wafer with high resolution.

Further, as can be easily imagined from FIG. 1, since the entire optical path of the exposure illumination light is filled with high-purity helium gas or dry nitrogen gas, the exposure illumination light (ultraviolet pulse light) is used. ) Is prevented as much as possible, and the exposure amount can be controlled with high accuracy.

Further, according to the exposure apparatus 10, since the wafer tables TB1 and TB2 can be exchanged, it is sufficient to prepare one alignment optical system ALG and one wafer loader as a substrate exchange apparatus. (Reduction in the length in the X-axis direction), and the footprint can be reduced accordingly. In addition, since the wafer exchange for the two wafer tables is performed at one location, the opening (opening area) of the chamber 42 can be reduced by that much, thereby reducing the purity of the helium gas in the chamber 42. Can be suppressed.

Further, according to the present embodiment, since the above-described high throughput is obtained, even if the off-axis alignment optical system is installed farther from the projection optical system PL, the influence of the deterioration of the throughput is almost eliminated. Therefore, even if a catadioptric system having a large diameter at the bottom is employed, there is almost no inconvenience. In addition, the high N.C. A. It is possible to design and install an optical system having a (numerical aperture) and a small aberration.

Further, according to the present embodiment, since each optical system has an interferometer beam from an interferometer for measuring substantially the center of each optical axis of the alignment optical system and the projection optical system PL, In both cases of pattern exposure via the projection optical system, the positions of the two wafer tables can be accurately measured without any Abbe error, and the two wafer tables can be independently and accurately measured. It can be moved.

Note that the configuration of the stage device according to the above embodiment is an example, and the configuration of the stage device according to the present invention is not limited to this. That is, in the above-described embodiment, two stage bodies are provided from the viewpoint of improving the throughput by the above-described concurrent processing.
The stage device according to the present invention may have only a single two-dimensional moving stage main body.

In the above embodiment, the supporting / fine movement system as a driving device includes a gas static pressure bearing, an electromagnet, and a flat motor, and supports the wafer table on the stage body in a non-contact manner. Although a device capable of position / posture control was adopted for the above, the present invention is not limited to this. For example, the driving device and the supporting device may be provided completely separately. In this case, as the supporting device, a device that supports the table in contact with the stage body may be used. Further, a driving device that drives the table in the Z, θx, and θy directions may be used. As a combination of a supporting device for contacting and supporting the table and a driving device for driving the table in the Z, θx, and θy directions, for example, a leaf spring is used as the supporting device, and three independently drivable voice coil motors are used as the driving device. Can be adopted.

The transfer system is not limited to the combination of the transfer arm mechanism of the above embodiment and the linear motor for driving the transfer arm mechanism.
For example, a robot arm or a crane that can be used may be employed. In short, any mechanism or device capable of transporting the table separately from the stage body may be used. The number of tables is not limited to two, and may be one or three or more.

In the above embodiment, the three-surface reflection type movable mirror (102a, 102b,
Although 102c) and (102d, 102e, 102f) are installed, a moving mirror of a two-surface reflection type may be installed instead. In this case, each measuring axis of the interferometer system is adjusted accordingly. Just change the placement. Instead of the movable mirror, two or three side surfaces of the wafer table may be mirror-finished to form reflective surfaces, and these reflective surfaces may be used as movable mirrors.

In the above embodiment, the lighting unit I
LU has housing 20, and reticle stage RST
Is stored in the reticle chamber 22, and the stage device 12
Are installed in the chamber 42, and these housings 20,
The case where the chamber 22, the chamber 42, and the column of the projection optical system PL are filled with an inert gas such as helium gas has been described. However, the present invention is not limited to this. It may be stored in the chamber.

In the above embodiment, the projection optical system PL
And a case where one alignment optical system ALG is provided, but the present invention is not limited to this.
Alignment optical systems ALG on both sides in the non-scanning direction
May be arranged. In such a case, it is necessary to adjust the arrangement of the interferometer and the like, but the transfer system and transfer path of the wafer table can be simplified as compared with the above embodiment.

In the above embodiment, while exposing is performed using one reticle pattern on one wafer table, wafer exchange is performed on the other wafer table.
Although the case of performing alignment and the like has been described, the present invention is not limited to this. For example, as disclosed in Japanese Patent Application Laid-Open No. H10-214783, a reticle stage on which two reticles can be mounted is During double exposure using the pattern of one reticle, wafer exchange, alignment, and the like may be performed in parallel on the other wafer table. In this way, high resolution and an effect of improving the DOF (depth of focus) can be obtained by double exposure without significantly lowering the throughput by simultaneous and parallel processing.

<< Second Embodiment >> Next, a second embodiment of the present invention will be described with reference to FIGS. Here, the same reference numerals are used for the same or equivalent components as those of the first embodiment, and the description thereof will be simplified or omitted.

FIG. 20 is a plan view schematically showing the vicinity of a wafer chamber of exposure apparatus 200 according to the second embodiment. As shown in FIG. 20, exposure apparatus 200
Then, the first to third wafer chambers 40A, 40A are used as wafer chambers.
B, 40C. These rooms 40A-40
C is filled with dry nitrogen or helium gas or the like having an oxygen (air) concentration of less than several ppm.

The second wafer chamber 40B as the central second chamber
Is a room dedicated to alignment. The first wafer chamber 40A as the first chamber on both sides of the second wafer chamber 40B and the third wafer chamber 40C as the third chamber are dedicated to exposure.

In each of these three wafer chambers 40A to 40C, a first stage main body ST1, a second stage main body ST2, and a third stage main body ST3 similar to the first stage main body ST1 are stored, respectively. It is driven in the XY two-dimensional directions by a drive system (not shown).

The upper portion of the partition wall of the first wafer chamber 40A is joined without gap to the lower end of the lens barrel of the projection optical system PL as the exposure optical system. Similarly, the upper part of the partition wall of the third wafer chamber 40C is joined without gap to the lower end part of the lens barrel of the projection optical system PL as the exposure optical system. A reticle chamber 22 and an illumination unit ILU are provided above each projection optical system PL in the same manner as in the first embodiment, so that scanning exposure can be performed in the same manner.

In the second wafer chamber 40B, the lower end of an alignment optical system ALG as a mark detection system is housed.

FIG. 20 shows a state where wafer table TB1 as the first table is supported on first stage main body ST1 and moves integrally with first stage main body ST1 to perform exposure. I have. The position of the wafer table TB1 is determined by the interferometers 32, 3 constituting the first interferometer system 140A via the respective reflecting surfaces of the moving mirror M1 including an L-shaped mirror provided on the upper surface of the wafer table TB1.
3 has been measured.

Also, a state is shown in which a wafer table TB2 as a second table is supported on the second stage main body ST2, moves together with the second stage main body ST2, and alignment is performed. The position of the wafer table TB2 is determined by the interferometers 34 constituting the second interferometer system 140B via the respective reflecting surfaces of the movable mirror M2 formed of an L-shaped mirror provided on the upper surface of the wafer table TB2.
35.

Also, in the third wafer chamber 40C, a state is shown in which a wafer table TB3 is supported on a third stage main body ST3, and moves integrally with the third stage main body ST3 to perform exposure. ing. The position of the wafer table TB3 is determined by the interferometer system 1 similar to the first interferometer system 140A via each reflecting surface of a movable mirror M3 formed of an L-shaped mirror provided on the upper surface of the wafer table TB3.
It is measured by the interferometers 32 and 33 constituting 40C.

Further, in the second embodiment, a transfer system storage chamber 204 is provided in which each of the three wafer chambers 40A to 40C is connected via bellows-like connection sections 202A to 202C. . This transfer system storage room 20
4 and the inner spaces of the connection portions 202A to 202C are also filled with dry nitrogen or helium gas having an oxygen (air) concentration of less than several ppm. And the transport system storage room 2
04, any of the wafer chambers 40A to 40C can be freely accessed, and the wafer tables TB1 to TB3 can be freely accessed.
A transfer robot 206 composed of an articulated robot having a transfer arm (a transfer arm similar to the transfer arm 86) capable of transferring any one of them is installed.

Although not shown, a coater / developer (resist coating / developing device) (not shown) has an inline interface (not shown) on the opposite side of the transfer system storage chamber 204 from the connection portion 202. Connected through. The transfer robot 206 has a structure capable of accessing the inside of the inline interface unit.

On the upper surfaces of wafer tables TB1 to TB3, a first reference mark plate WM on which a first reference mark for baseline measurement is formed and a pair of second reference marks on which a second reference mark for reticle alignment is formed, respectively. Two reference mark plates RM1 and RM2 are formed in a predetermined positional relationship.

Next, the exposure processing sequence of the exposure apparatus 200 of the second embodiment configured as described above will be briefly described with reference to the timing chart of FIG. In FIG. 21, numerals 1, 2, and 3 outside parentheses are shown.
Indicates where the wafer tables TB1, TB2, TB3 are. The number in parentheses indicates the number of the wafer.

In the initial state, there is a wafer table TB2 in the wafer chamber 40A, a wafer table TB3 in the wafer chamber 40C, and a wafer table TB1 in the in-line interface section shown by a virtual line in FIG. It is at a predetermined wafer exchange position. In this initial state, it is assumed that no wafer is loaded on any of wafer tables TB1, TB2, and TB3.

In this state, the exposure processing sequence shown in FIG. 21 is started. First, a first wafer W1 is loaded on a wafer table TB1 at a wafer exchange position by a wafer transfer system (not shown). Then, this wafer W1
Is loaded by the transfer robot 206 in the same manner as in the first embodiment.
It is transferred to the second stage main body ST2 waiting at the alignment reference position in 0B. Next, the alignment with respect to the wafer W1 is started in the wafer chamber 40B in the same procedure as in the first embodiment. In parallel with this alignment, the wafer table TB2 is transferred from the inside of the wafer chamber 40A to the wafer exchange position by the transfer robot 206, and the second wafer W2 is loaded on the wafer table TB2 by a wafer transfer system (not shown). .

Next, when the alignment with respect to the wafer W1 in the wafer chamber 40B is completed, the wafer table TB1 on which the wafer W1 is loaded is transferred from the wafer chamber 40B into the wafer chamber 40A by the transfer robot 206, and the exposure reference position is set. Stage main body S waiting at
It is passed to T1 in the same manner as in the first embodiment. And
Exposure of the wafer W1 on the wafer table TB1 is started in the same procedure as in the first embodiment.

Slightly after the start of exposure on wafer W1, wafer table T on which wafer W2 has been loaded is loaded.
B2 is transferred by transfer robot 206 onto second stage main body ST2 waiting at the alignment reference position in wafer chamber 40B. Then, the wafer table T
The alignment for the wafer W2 on B2 is started in the same procedure as described above.

Slightly after the start of the alignment with respect to wafer W2, wafer table TB3 in wafer chamber 40C is transferred to a wafer exchange position by transfer robot 206, and the third wafer is transferred by a wafer transfer system (not shown). W3 is loaded on wafer table TB3.

Next, when the alignment for the wafer W2 in the wafer chamber 40B is completed, the wafer table TB2 on which the wafer W2 is loaded is transferred from the wafer chamber 40B into the wafer chamber 40C by the transfer robot 206, and the exposure reference position is set. Stage main body S waiting at
It is passed to T3 in the same manner as in the first embodiment. And
Exposure of the wafer W2 on the wafer table TB2 is started in the same procedure as in the first embodiment.

Almost simultaneously with the start of exposure of wafer W2, wafer table TB3 loaded with wafer W3 is moved by transfer robot 206 to wafer chamber 4
It is transferred to the second stage main body ST2 waiting at the alignment reference position in 0B. Then, alignment of wafer W3 on wafer table TB3 is started in the same procedure as described above.

At this time, the wafer W1 on the wafer table TB1 is exposed in the wafer chamber 40A, and the wafer W2 on the wafer table TB2 is exposed in the wafer chamber 40C in parallel with the exposure. And the wafer W on the wafer table TB3 in the wafer chamber 40B
3 has been performed.

After a lapse of a predetermined time, the wafer chamber 40B
The alignment with respect to the wafer W3 is completed, and the wafer table TB3 waits at the alignment reference position.

When the exposure of wafer W1 in wafer chamber 40A is completed after the elapse of a predetermined time, wafer table TB1 loaded with the exposed wafer is transferred from wafer chamber 40A to wafer exchange position by transfer robot 206. You. Then, the wafer transfer between the first wafer W1 and the fourth wafer W4 is started on the wafer table TB1 by a wafer transfer system (not shown).

In parallel with this, the wafer table TB3 waiting at the alignment reference position is moved to the transfer robot 2
At 06, the wafer is transferred from the wafer chamber 40B to the wafer chamber 40A and transferred onto the first stage main body ST1 at the exposure reference position. Then, the wafer W on the wafer table TB3
Exposure to 3 starts in the same procedure as described above. At this time, the exposure of the wafer W2 is being continued in the wafer chamber 40C.

After a lapse of a predetermined time from the start of exposure on wafer W3, the above-described wafer exchange is completed. When the wafer exchange is completed, the wafer table TB1 loaded with the wafer W4 is transported from the wafer exchange position into the wafer chamber 40B by the transport robot 206, and the second stage main body ST2 is waiting at the alignment reference position.
Passed to. Then, alignment of wafer W4 on wafer table TB1 is started in the same procedure as described above. At this time, exposure for wafer W3 is being continued in wafer chamber 40A, and exposure for wafer W2 is being continued in wafer chamber 40C.

When a predetermined time has elapsed from the start of the alignment of the wafer W4, the exposure of the wafer W2 in the wafer chamber 40C ends. Then, a wafer table TB2 on which the wafer W2 for which exposure has been completed is loaded.
Is transferred from the wafer chamber 40C to the wafer exchange position by the transfer robot 206. Then, the second wafer W2 and the fifth wafer W are moved by a wafer transfer system (not shown).
5 is started on the wafer table TB2.

After a lapse of a predetermined time from the start of the wafer exchange, the alignment for wafer W4 in wafer chamber 40B is completed. Then, the wafer table TB1 on which the wafer W4 is loaded is transferred from the wafer chamber 40B to the wafer chamber 40C by the transfer robot 206, and is transferred onto the stage main body ST3 at the exposure reference position. Then, exposure of wafer W4 on wafer table TB1 is started in the same procedure as described above. At this time, the wafer exchange is completed almost simultaneously at the wafer exchange position. In the wafer chamber 40A, exposure of the wafer W3 is continued.

Slightly after the start of the exposure of the wafer W4, the wafer table TB2 loaded with the wafer W5 is transferred from the wafer exchange position into the wafer chamber 40B by the transfer robot 206, and is waiting at the alignment reference position. To the second stage body ST2. Then, alignment with wafer W5 on wafer table TB2 is started in the same procedure as above. At this time, exposure on wafer W3 is being continued in wafer chamber 40A, and exposure on wafer W4 is being continued in wafer chamber 40C.

After a lapse of a predetermined time, the wafer chamber 40B
The alignment with respect to the wafer W5 is completed, and the wafer table TB2 waits at the alignment reference position.

With a slight delay, exposure of wafer W3 in wafer chamber 40A ends. Then, the transfer robot 206 moves the wafer table TB3 loaded with the exposed wafer W3 into the wafer chamber 40A.
Is transferred to the wafer exchange position. Then, the wafer exchange between the third wafer W3 and the sixth wafer W6 is started on the wafer table TB3 by a wafer transfer system (not shown).

In parallel with this, the wafer table TB2 waiting at the alignment reference position is moved to the transfer robot 2
At 06, the wafer is transferred from the wafer chamber 40B to the wafer chamber 40A and transferred onto the first stage main body ST1 at the exposure reference position. Then, the wafer W on the wafer table TB2
Exposure to 5 is started in the same procedure as described above. At this time, the exposure of the wafer W4 is being continued in the wafer chamber 40C.

After a lapse of a predetermined time from the start of exposure on wafer W5, the above-described wafer exchange ends. When the wafer exchange is completed, the wafer table TB3 loaded with the wafer W6 is transferred from the wafer exchange position into the wafer chamber 40B by the transfer robot 206, and is transferred to the second stage main body ST2 waiting at the alignment reference position. It is. Then, alignment with wafer W6 on wafer table TB3 is started in the same procedure as described above.
At this time, exposure on wafer W5 is being continued in wafer chamber 40A, and exposure on wafer W4 is being continued in wafer chamber 40C.

Thereafter, the simultaneous and parallel processing using three wafer tables TB1, TB2 and TB3 is performed in the same procedure as described above. Then, for example, the wafer table TB1
The upper seventh wafer W7 is exposed in the wafer chamber 40A, and the eighth wafer W8 on the wafer table TB2 is aligned in the wafer chamber 40B.
During the simultaneous and parallel processing in which the sixth wafer W6 on B3 is exposed in the wafer chamber 40C, the state shown in FIG. 20 is realized.

According to the exposure apparatus 200 of the second embodiment described above, basically the same effects as those of the above-described first embodiment can be obtained. In the second embodiment, a wafer table is placed at a wafer exchange position in an inline interface unit (not shown).
In other words, a method of exchanging wafers by a wafer transfer system and transferring the wafer table after the exchange of wafers into the wafer chamber 40B is used. Therefore, during wafer exchange, the transfer robot 206 can transfer another wafer table on which the aligned wafer is loaded to a wafer chamber for performing exposure. Parallel processing can be realized without waste. As a result, as is clear from the timing chart of FIG. 21, the throughput can be further improved as compared with the first embodiment. Specifically, the throughput can be improved to about three times or more as compared with the conventional single-stage exposure apparatus.

Exposure is performed on the first gas filled with an inert gas.
Since the exposure is performed in the wafer chambers 40A and 40B, vacuum ultraviolet light or the like having a short wavelength can be used as exposure illumination light.
The resolution of the projection optical system PL as an exposure optical system can be improved. In addition, since the alignment is also performed in the second wafer chamber filled with the inert gas, the aligned wafer is immediately transferred to the first stage main body ST1 in the first wafer chamber 40A or to the second wafer chamber in the third wafer chamber 40C. Since exposure can be started by carrying the wafer onto the three-stage main body ST3, the time from the end of alignment to the start of exposure can be reduced.

Further, in the second embodiment, as is apparent from FIG. 20, since the wafer chambers are set so as to be located in a triangular shape, the transfer robot 206 which can access them in common is used. , It is possible to arrange them in a state where space efficiency is improved as much as possible. That is, the footprint is narrowed.

In the exposure apparatus of the second embodiment, a plurality of transfer robots may be provided.

In each of the above embodiments, the case where the stage device according to the present invention is applied to a scanning stepper has been exemplified. However, the scope of the present invention is not limited to this. Such a stage device,
The present invention can also be suitably applied to a stationary type exposure apparatus such as a stepper that performs exposure while a mask and a substrate are stationary.
Even in such a case, the same effect as the above embodiment can be obtained.

The stage apparatus according to the present invention can be suitably applied to a proximity exposure apparatus for transferring a mask pattern onto a substrate by bringing the mask and the substrate into close contact without using a projection optical system.

Of course, the present invention relates to an exposure apparatus for transferring a device pattern onto a glass plate, which is used not only for an exposure apparatus used for manufacturing a semiconductor element but also for a display including a liquid crystal display element and a plasma display. The present invention can also be applied to an exposure apparatus used for manufacturing a thin-film magnetic head, which transfers a device pattern onto a ceramic wafer, and an exposure apparatus used for manufacturing an imaging device (such as a CCD).

In addition to a micro device such as a semiconductor element, a light exposure apparatus, an EUV (Extreme Ultraviole
t) The present invention can be applied to an exposure apparatus that transfers a circuit pattern onto a glass substrate or a silicon wafer in order to manufacture a reticle or a mask used in an exposure apparatus, an X-ray exposure apparatus, an electron beam exposure apparatus, and the like. . Where DUV
In an exposure apparatus that uses (far ultraviolet) light or VUV (vacuum ultraviolet) light, a transmission reticle is generally used. As the reticle substrate, quartz glass, fluorine-doped quartz glass, fluorite, magnesium fluoride, Alternatively, quartz or the like is used. In addition, a transmission type mask (stencil mask, membrane mask) is used in a proximity type X-ray exposure apparatus or an electron beam exposure apparatus, and a reflection type mask is used in an EUV exposure apparatus. A silicon wafer is used as a mask substrate. Is used.

Further, the stage apparatus according to the present invention is not limited to an exposure apparatus, but may be used in other substrate processing apparatuses (for example, a laser repair apparatus, a substrate inspection apparatus, etc.) or a sample positioning apparatus in other precision machines. Widely applicable.

The exposure optical system in the exposure apparatus according to the present invention is not limited to the projection optical system, but may be an X-ray optical system,
A charged particle beam optical system such as an electron optical system can also be used. For example, when an electron optical system is used, the optical system can be configured to include an electron lens and a deflector. As the electron gun, a thermionic emission type lanthanum hexabolite (L) is used.
aB ₆ ) and evening tar (Ta) can be used. It goes without saying that the optical path through which the electron beam passes is in a vacuum state.

When the present invention is applied to an exposure apparatus using an electron optical system, a structure using a mask may be used, or a pattern may be formed on a substrate by direct drawing using an electron beam without using a mask. good. That is,
The present invention provides any one of a pencil beam system, a variable shaped beam system, a cell projection system, a blanking aperture system, and an EBPS, as long as the electron beam exposure apparatus uses an electron optical system as an exposure optical system. Can also be applied.

In the exposure apparatus according to the present invention, EUV light in the soft X-ray region having a wavelength of about 5 to 30 nm is used as the exposure illumination light in addition to the above-described light in the far ultraviolet region and the vacuum ultraviolet region. Is also good. Further, for example, as vacuum ultraviolet light, Ar
An F excimer laser beam, an F ₂ laser beam, or the like is used, but is not limited thereto. A single-wavelength laser beam in the infrared or visible region oscillated from a DFB semiconductor laser or a fiber laser is, for example, erbium (or erbium ( Eb)
And ytterbium (Yb)) may be amplified by a fiber amplifier doped with the same, and a harmonic converted to ultraviolet light using a nonlinear optical crystal may be used.

For example, the oscillation wavelength of a single-wavelength laser is set to 1.
When the wavelength is in the range of 51 to 1.59 μm, the generated wavelength is 18
An eighth harmonic having a wavelength in the range of 9 to 199 nm or a tenth harmonic having a generation wavelength in the range of 151 to 159 nm is output. Especially the oscillation wavelength is 1.544 to 1.553 μm
m, an 8th harmonic having a generation wavelength in the range of 193 to 194 nm, that is, ultraviolet light having substantially the same wavelength as the ArF excimer laser light is obtained, and the oscillation wavelength is set to 1.57.
When it is within the range of 1.58 μm, the generated wavelength is 157 to
The 10th harmonic within the range of 158 nm, that is, ultraviolet light having substantially the same wavelength as the F ₂ laser light is obtained.

Also, the oscillation wavelength is set to 1.03 to 1.12 μm
, A 7th harmonic whose output wavelength is in the range of 147 to 160 nm is output.
When the wavelength is in the range of 099 to 1.106 μm, a 7th harmonic having a generated wavelength in the range of 157 to 158 μm, that is, ultraviolet light having substantially the same wavelength as the F ₂ laser light is obtained. In this case, for example, a ytterbium-doped fiber laser can be used as the single-wavelength oscillation laser.

In the above embodiment, the case where the reduction system is used as the projection optical system has been described. However, the projection optical system may be either a unity magnification system or an enlargement system. Furthermore, the catadioptric projection optical system is not limited to the one described above,
For example, having a circular image field and the object side,
A reduction system may be used in which both the image plane side is telecentric and the projection magnification is 1/4 or 1/5. Further, in the case of a scanning exposure apparatus having this catadioptric projection optical system, the irradiation area of the illumination light is substantially centered on its optical axis within the field of view of the projection optical system, and is substantially in the scanning direction of the reticle or wafer. It may be of a type defined in a rectangular slit shape extending along the orthogonal direction. According to a scanning exposure apparatus provided with such a catadioptric projection optical system, for example, a high accuracy 100 Nml / S pattern about fine patterns using a F ₂ laser beam having a wavelength of 157nm as exposure illumination light on the wafer Can be transferred to

Devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.) are designed according to the functions and performances of the devices (for example,
A step of designing a circuit of a semiconductor device, a step of manufacturing a reticle (mask) having a circuit pattern formed based on the design step, a step of manufacturing a wafer from a material such as silicon, and a step of manufacturing and manufacturing the reticle (mask). ) And a wafer, a wafer processing step of forming an actual circuit or the like on the wafer by lithography technology or the like, and a device assembling step of assembling a device using the processed wafer (dicing step, bonding step, packaging) Process), and an inspection step of performing an inspection such as an operation confirmation test and a durability test of the manufactured device.

For example, in the case of a semiconductor device, the wafer processing step includes, as pre-processing steps for each stage of wafer processing, an oxidation step for oxidizing the surface of the wafer, a CVD step for forming an insulating film on the wafer surface, Includes an electrode forming step of forming electrodes by vapor deposition and an ion implanting step of implanting ions into a wafer. Each step is selected and executed according to a necessary process. Further, as a post-processing step performed after the completion of such a pre-processing step, a resist forming step of applying a photosensitive agent to a wafer, and a circuit pattern of a mask using the exposure apparatus and the exposure method of each of the above embodiments are performed. Exposure step of transferring to the wafer, development step of developing the exposed wafer, etching step of etching away the exposed members other than the area where the resist remains, and resist removing step of removing the unnecessary resist after etching And so on. By repeating these pre-processing and post-processing steps, multiple circuit patterns are formed on the wafer.

According to the device manufacturing method described above,
In the exposure step that constitutes a lithography process together with each step of resist formation and development, exposure is performed by the exposure apparatus and the exposure method of each of the above-described embodiments, so that alignment accuracy and exposure accuracy are improved and throughput is improved, thereby achieving high integration. It is possible to improve the productivity of the device.

[0278]

As described above, the stage apparatus according to the present invention provides a novel stage apparatus that contributes to the realization of a next-generation exposure apparatus capable of performing high-throughput and high-accuracy exposure. Can be.

Further, according to the exposure apparatus of the present invention, there is an effect that both the throughput and the exposure accuracy can be improved.

Further, according to the device manufacturing method of the present invention, there is an effect that the productivity of a highly integrated device can be improved.

[Brief description of the drawings]

FIG. 1 is a view schematically showing a configuration of an exposure apparatus according to a first embodiment.

FIG. 2 is a perspective view showing a positional relationship among two wafer tables, a reticle stage, a projection optical system, and an alignment optical system.

FIG. 3 is a plan view schematically showing a chamber accommodating a stage device and a wafer loader chamber in a wafer loader chamber disposed adjacent to the chamber, with a ceiling portion removed.

FIG. 4 is a schematic perspective view showing a stage device.

FIG. 5 is an enlarged perspective view for explaining a configuration of a transfer arm mechanism of FIG. 4;

FIG. 6 is a schematic perspective view showing the stage device in a state where a wafer table is respectively supported on first and second stage bodies.

7 is an enlarged perspective view showing a first stage main body of FIG. 6 and a wafer table TB1 supported by the first main body.

FIG. 8 is an exploded perspective view of FIG. 7;

FIG. 9 is a diagram showing a schematic configuration of an armature coil.

FIG. 10 is a bottom view showing the configuration of the magnetic pole unit.

FIGS. 11A to 11C are longitudinal sectional views showing the configuration of a magnetic pole unit.

FIGS. 12A and 12B are diagrams for explaining a magnetic circuit relating to a magnetic pole unit; FIGS.

FIG. 13 is an exploded perspective view showing the second stage main body of FIG. 6 and a wafer table TB2 supported by the main body.

FIG. 14 is a plan view illustrating the configuration of first and second interferometer systems on the wafer side.

FIG. 15 is a block diagram schematically showing a configuration of a control system in the exposure apparatus according to the first embodiment.

FIG. 16A and FIG. 16B are diagrams (part 1) illustrating a flow of an operation at the time of parallel processing using two wafer tables.

FIGS. 17A and 17B are diagrams (part 2) illustrating a flow of an operation at the time of parallel processing using two wafer tables.

FIGS. 18A and 18B are diagrams (part 3) illustrating a flow of an operation at the time of parallel processing using two wafer tables.

FIG. 19 is a diagram (part 4) illustrating a flow of an operation at the time of parallel processing using two wafer tables.

FIG. 20 is a schematic plan view showing the vicinity of a wafer chamber of an exposure apparatus according to a second embodiment.

FIG. 21 is a timing chart for explaining an exposure processing sequence in the exposure apparatus of FIG. 20;

[Explanation of symbols]

10 exposure apparatus, 12 stage apparatus, 40A first wafer chamber (first chamber), 40B second wafer chamber (second chamber),
91A: Support / fine movement system (drive device), 92A-9
2D: electromagnet (part of the first stator), 92E to 92H ...
Electromagnets (part of the second stator), 94A to 94D ... iron pieces (part of the first mover), 94E to 94H ... iron pieces (part of the second mover), 100 ... Armature units (first fixed part) Magnetic pole unit (part of the first mover), 106...
118 ... magnetic pole unit (part of the second mover), 120 ...
Armature unit (part of second stator), 140A ... first
Interferometer system, 140B ... second interferometer system, 19
0: transport system, 200: exposure apparatus, W1: wafer (substrate,
Object), W2 wafer (substrate, object), ST1 first stage body, TB1 wafer table (first table), TB2 wafer table (second table), PL
... Projection optical system (exposure optical system), ALG ... Alignment optical system (mark detection system).

 ────────────────────────────────────────────────── ─── Continued on the front page F-term (reference) CC17 CC20

Claims (11)

[Claims] 1. A stage apparatus for driving an object, comprising: a movable first stage main body; a first table holding the object and detachably supported by the first stage main body; A first stator provided on the stage main body, and a first mover provided on the first table and capable of cooperating with the first stator, wherein the first table is provided with respect to the first stage main body. A stage device comprising: a driving device for driving. 2. The stage device according to claim 1, wherein the driving device supports the first table in a non-contact manner on the first stage main body. 3. The device according to claim 1, wherein the driving device minutely drives the first table in an inclined direction with respect to a moving surface of the first stage main body and in a direction perpendicular to the moving surface. Stage equipment. 4. The stage according to claim 1, wherein the driving device slightly drives the first table in a predetermined direction within a moving surface of the first stage main body. apparatus. 5. A second mover which holds the object, is detachably supported on the first stage main body, and is capable of cooperating with the first stator in place of the first mover. The stage apparatus according to claim 1, further comprising: a second table; and a transport system that transports the first table and the second table. 6. The stage apparatus according to claim 5, wherein the transfer system can drive the table to be transferred in at least a two-dimensional direction in a plane parallel to the moving surface. 7. A second stage body having a second stator which can cooperate with the first and second movers alternatively, and which can move independently of the first stage body. The second stator is provided in cooperation with the movable member provided on any of the tables supported by the transfer system to the second stage main body. The stage device according to claim 5, wherein the stage is driven. 8. A predetermined reflection surface is provided on each of the first and second tables, and receives light reflected from the reflection surface of one of the tables supported on the first stage main body. A first interferometer system for measuring the position of any one of the tables;
A second interferometer system configured to receive light reflected from the reflection surface of any of the tables supported on the second stage main body and measure a position of any of the tables. The stage device according to claim 7, wherein: 9. An exposure apparatus for exposing a substrate to form a predetermined pattern on the substrate, wherein the substrate is held as the object on the first and second tables, respectively. Stage equipment;
An exposure optical system for exposing a substrate on any of the tables supported on the first stage main body; and a mark detection for detecting a mark on any of the tables supported on the second stage main body And an exposure system. 10. A first chamber accommodating the first stage main body and at least a part of the exposure optical system and filled with an inert gas therein; the second stage main body and the mark detection system. 10. The exposure apparatus according to claim 9, further comprising: a second chamber accommodating at least a part of the second chamber and having an inert gas filled therein. 11. A device manufacturing method including a lithography step, wherein exposure is performed using the exposure apparatus according to claim 9 in the lithography step.