JP2007274881A - Moving object apparatus, fine-motion object, and exposure apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress generation of heat in each armature coil that contributes to a drive of fine-motion stage. <P>SOLUTION: Since the resultant of respective driving forces generated through the cooperation of four armature coils 56A to 56D provided at a coarse-motion stage, and the corresponding magnet units 52A to 52D provided at a fine-motion stage WFS1 is allowed to act to the fine-motion stage, electric currents consumed in each armature coil can be suppressed. Thereby, generation of heat in each armature coil can be suppressed. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a moving body device, a fine moving body, and an exposure apparatus, and more specifically, a moving body device including a moving body, a fine moving body supported so as to be capable of being micro-driven to the moving body, and an exposure apparatus including the moving body device. About.

  In recent years, in lithography processes for manufacturing semiconductor devices, liquid crystal display devices, etc., step-and-repeat reduction projection exposure that can form fine patterns on a photosensitive object with high throughput with high throughput due to high integration of semiconductors and the like. Sequentially moving exposure apparatuses such as an apparatus (so-called stepper) and a step-and-scan type scanning projection exposure apparatus (so-called scanning stepper (also called a scanner)) are mainly used.

  In this type of exposure apparatus, as a driving device for driving a photosensitive object such as a wafer or a glass plate (hereinafter referred to as “wafer”), coarse motion driven in a two-dimensional plane by a two-axis linear motor, a planar motor, or the like. 2. Description of the Related Art A wafer stage apparatus having a stage and a fine movement stage that holds a wafer on the coarse movement stage and is finely driven in a Z-axis direction and an inclination direction by a voice coil motor or the like is used.

  However, in the above-described wafer stage device, the driving device such as the linear motor, the planar motor, and the voice coil motor includes an armature unit having a plurality of coils and a magnet unit having a plurality of magnets. If the current is supplied to the coil constituting the coil, the coil may generate heat. Since the heat generated in the coil causes a reduction in exposure accuracy, it is necessary to take some measures.

  The present invention has been made under the circumstances described above. From a first viewpoint, the present invention is provided with a moving body; a fine moving body supported in a non-contact state with respect to the moving body; and provided on the moving body. A drive mechanism having four armature coils and a magnet unit provided in the fine movement body and generating a driving force in cooperation with the four armature coils. is there.

  According to this, since the resultant force of each driving force generated by the cooperation of each of the four armature coils and the magnet unit corresponding thereto can be applied to the fine moving body, Current consumption can be suppressed. Thereby, the heat_generation | fever per armature coil can be suppressed.

  From a second aspect, the present invention is a fine moving body supported so as to be capable of being driven minutely with respect to the moving body, and the fine moving body supported in a non-contact state with respect to the moving body; And a magnet unit that generates a driving force in cooperation with four armature coils provided on the moving body.

  According to this, since the resultant force of each driving force generated by the cooperation of each of the four armature coils and the corresponding magnet unit can be applied to the fine moving body body, Current consumption can be suppressed. Thereby, the heat_generation | fever per armature coil can be suppressed.

  From a third viewpoint, the present invention is a second moving body device comprising: a moving body; and the fine moving body of the present invention supported in a non-contact state with respect to the moving body. According to this, heat generation in one armature coil can be suppressed.

  According to a fourth aspect of the present invention, there is provided an exposure apparatus for forming a pattern on an object, comprising the first or second movable body apparatus of the present invention on which the object is placed on the fine moving body. An exposure apparatus characterized by that.

  According to this, it is possible to suppress a decrease in exposure accuracy due to heat generation.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 schematically shows the overall configuration of an exposure apparatus 10 according to an embodiment. Since the projection optical system PO is used in the exposure apparatus 10 as will be described later, in the following, the optical axis direction of the projection optical system PO is the Z-axis direction, and the plane orthogonal to this is shown in FIG. The description will be made assuming that the left-right direction in the drawing is the Y-axis direction and the direction orthogonal to the drawing is the X-axis direction.

  The exposure apparatus 10 projects a partial image of the circuit pattern formed on the reticle R onto the wafer W1 (or wafer W2) via the projection optical system PO, while the reticle R and the wafer W1 (or W2). Is scanned relative to the projection optical system PO in a one-dimensional direction (here, the Y-axis direction), so that the entire circuit pattern of the reticle R is stepped on each of a plurality of shot areas on the wafer W1 (or W2). The image is transferred by an & scan method.

  The exposure apparatus 10 emits EUV light (light in the soft X-ray region) as illumination light EL, reflects the illumination light EL from the light source apparatus 112, and reflects a predetermined incident angle, for example, about 50 [mrad]. The illumination optical system including the folding mirror M that is bent so as to be incident on the pattern surface of the reticle R (the lower surface in FIG. 1 (the surface on the −Z side)) (note that the bending mirror M is disposed inside the lens barrel of the projection optical system PO). Although present, it is actually a part of the illumination optical system), reticle stage RST that holds reticle R, and illumination light (EUV light) EL reflected by the pattern surface of reticle R on wafer W1 (or W2). ) To be exposed (upper surface in FIG. 1 (+ Z side surface)), projection optical system PO, alignment system ALG, and wafer stage WST1 holding wafer W1 and wafer And a wafer stage apparatus 100 or the like including a wafer stage WST2 for holding the W2. Although not shown in the present embodiment, actually, the reticle stage RST, the projection optical system PO, the wafer stages WST1, WST2, and the like are accommodated in a vacuum chamber (not shown).

  As the light source device 112, for example, a laser excitation plasma light source is used. This laser-excited plasma light source irradiates an EUV light generating substance (target) with high-intensity laser light, whereby the target is excited into a high-temperature plasma state and emitted when the target cools down, ultraviolet light, and ultraviolet light. , Visible light, and light in other wavelength ranges. In the present embodiment, EUV light having a wavelength of 5 to 20 nm, for example, a wavelength of 11 nm is mainly used as the illumination light EL.

  The illumination optical system includes an illumination mirror, a wavelength selection window and the like (all not shown), a bending mirror M, and the like. Illumination light EL that is emitted from the light source device 112 and passes through the illumination optical system (EUV light EL reflected by the bending mirror M) illuminates the pattern surface of the reticle R as arc-slit illumination light.

  The reticle stage RST is arranged on a reticle stage base 132 arranged along the XY plane, and the reticle stage base is generated by a magnetic levitation force generated by, for example, a magnetic levitation type two-dimensional linear actuator constituting the reticle stage driving system 134. It is levitated and supported on 132. Reticle stage RST is driven with a predetermined stroke in the Y-axis direction by the driving force generated by reticle stage drive system 134, and is also driven in a small amount in the X-axis direction and the θz direction (rotation direction about the Z-axis). The reticle stage drive system 134 adjusts the magnetic levitation force generated at a plurality of locations to tilt in the Z-axis direction and the XY plane (the θx direction that is the rotation direction around the X axis and the θy direction that is the rotation direction around the Y axis). In addition, it can be driven by a minute amount.

  An electrostatic chuck (or mechanical chuck) reticle holder (not shown) is provided on the lower surface side of the reticle stage RST, and the reflective reticle R is held by the reticle holder. The reticle R is made of a thin plate such as a silicon wafer, quartz, or low expansion glass. A reflective film that reflects EUV light is formed on a surface (pattern surface) on the −Z side, for example, a film of molybdenum Mo and beryllium Be. A multilayer film is formed in which about 50 pairs are alternately stacked with a period of about 5.5 nm. This multilayer film has a reflectance of about 70% for EUV light having a wavelength of 11 nm. A multilayer film having the same configuration is also formed on the reflecting surfaces of the bending mirror M and other mirrors in the illumination optical system.

  On the multilayer film formed on the pattern surface of the reticle R, for example, nickel Ni or aluminum Al is applied on one surface as an absorption layer, and the absorption layer is patterned to form a circuit pattern.

  The position (including θz rotation) of reticle stage RST (reticle R) in the XY plane is a reticle laser interferometer (hereinafter referred to as “a reticle laser interferometer”) that projects a laser beam onto a reflective surface provided (or formed) on reticle stage RST. 182R) (referred to as “reticle interferometer”), for example, is always detected with a resolution of about 0.5 to 1 nm.

  Note that the position of the reticle R in the Z-axis direction is a reticle focus (not shown) comprising a multipoint focal position detection system disclosed in, for example, Japanese Patent Laid-Open No. 6-283403 (corresponding US Pat. No. 5,448,332). It is measured by a sensor.

  The measurement values of the reticle interferometer 182R and the reticle focus sensor are supplied to a control device (not shown), and the control device drives the reticle stage RST via the reticle stage driving unit 134 based on the measurement values.

  The projection optical system PO has a numerical aperture (NA) of 0.1, for example, and a reflection optical system composed of only a reflection optical element (mirror) is used. Here, the projection magnification is, for example, 1/4. Double ones are used. Accordingly, the EUV light EL that is reflected by the reticle R and includes information on the pattern formed on the reticle R is projected onto the wafer W1 (W2), whereby the pattern on the reticle R is reduced to 1/4 and the wafer is reduced. Transferred to W1 (W2).

  The projection optical system PO includes a lens barrel 117 and, for example, six reflective optical elements (mirrors) disposed inside the lens barrel 117. A rectangular opening 117b penetrating vertically is formed on the upper wall (+ Z side wall) of the lens barrel 117, and an opening 117a is formed on the −Y side wall. Inside the lens barrel 117, a bending mirror M constituting the illumination optical system described above is also arranged.

  As shown in FIG. 1, an off-axis alignment system ALG is provided at a position away from the projection optical system PO by a predetermined distance on the + Y side. As this alignment system ALG, here, broadband light is applied to the alignment mark (or aerial image measuring instrument FM1 (FM2)) on the wafer W1 (W2), the reflected light is received, and mark detection is performed by image processing. An FIA (Field Image Alignment) type alignment sensor is used. In addition, various alignment systems such as LIA (Laser Interferometric Alignment) type alignment sensor, LSA (Laser Step Alignment) type alignment sensor, and scanning probe microscope such as AFM (Atomic Force Microscope) should be used as alignment system ALG. Can do.

  Further, the lens barrel 117 of the projection optical system PO is provided with a holding device, similar to the above-described reticle focus sensor, for example, in Japanese Patent Laid-Open No. 6-283403 (corresponding US Pat. No. 5,448,332). A wafer focus sensor disclosed in detail is integrally attached (both not shown). With this wafer focus sensor, the position and the tilt amount in the Z-axis direction of the surface of the wafer W1 or W2 with respect to the lens barrel 117 of the projection optical system PO are measured.

  The wafer stage apparatus 100 includes a base BS, a wafer stage WST1 which is disposed above the base BS and holds the wafer W1 and moves in the XY plane, a wafer stage WST2 which holds the wafer W2 and moves in the XY plane, and these A drive system for driving the stages WST1 and WST2 and an interferometer system for measuring the positions of the stages WST1 and WST2 are included.

  As shown in FIG. 1 and FIG. 2 showing a state of the wafer stage apparatus 100 as viewed from above, the base BS has two power transmission / waste heat frames 24A and 24B with the Y-axis direction as the longitudinal direction. It is provided with a predetermined interval in the axial direction. These power transmission / waste heat frames 24A and 24B have an inverted U-shape when viewed from the + X direction to the -X direction, and one end and the other end of the base BS are located on the Y axis direction one side and the other end surface. It is fixed to each. The lower surfaces of the portions parallel to the XY plane located above the base BS of the power transmission / waste heat frames 24A, 24B are maintained at a predetermined distance from the uppermost surfaces of the wafer stages WST1, WST2. The specific configurations and functions of the power transmission / waste heat frames 24A and 24B will be described in detail later.

  As shown in FIG. 1, a magnet unit 30 including a plurality of permanent magnets is embedded on the upper surface side of the base BS. This magnet unit 30 constitutes a part of a planar motor described later. As can be seen from the plan view of FIG. 4, for example, a rare earth material is sintered and magnetized in the Z-axis direction (perpendicular magnetization). And) permanent magnets 28N and 28S. The permanent magnet 28N has a + Z side surface as an N magnetic pole surface, and the permanent magnet 28S has a + Z side surface as an S magnetic pole surface. These permanent magnets 28N and 28S are arranged in a matrix at predetermined intervals alternately along the X-axis direction and the Y-axis direction. The permanent magnets 28N and 28S have a substantially square shape in plan view (viewed from above), and each has the same size.

  Further, the magnet unit 30 includes a permanent magnet (interpolated magnet) 32 that is magnetized (horizontally magnetized) in the X-axis direction or the Y-axis direction. The interpolating magnet 32 is provided between the permanent magnet 28N and the permanent magnet 28S. As can be seen from FIG. 5 showing the base BS viewed from the + X side, the surface that contacts the permanent magnet 28N has an N magnetic pole. The surface that is in contact with the permanent magnet 28S is the S magnetic pole surface. The interpolating magnet 32 has a substantially square shape in plan view (viewed from above) and has the same size as the permanent magnets 28N and 28S described above. According to this magnet unit 30, a magnetic circuit is formed in which the magnetic flux sequentially goes around the permanent magnet 28 </ b> N, the permanent magnet 28 </ b> S, and the interpolation magnet 32 (see FIG. 5), and the magnetomotive force can be enhanced by the interpolation magnet 32. ing.

  As shown in FIG. 5 (and FIG. 1), a protection plate 26 made of a non-magnetic material is provided on the upper surface of the base BS so as to cover the magnet unit 30 from above. The protective plate 26 prevents direct contact between the wafer stages WST1 and WST2 and the permanent magnets 28N, 28S, and 32 and prevents damage to the permanent magnets 28N, 28S, and 32.

  As shown in FIG. 2, wafer stage WST1 includes coarse movement stage WRS1 made of a plate-like member having a substantially rectangular shape in plan view (viewed from above), and fine movement mounted on coarse movement stage WRS1. Stage WFS1.

  Wafer stage WST1 of FIG. 3 (A) and FIG. 3 (A) showing a partial cross-sectional view of wafer stage WST1 as viewed from the + X direction on the lower surface (-Z side surface) of coarse movement stage WRS1. As shown in FIG. 3B, an armature unit 130 that constitutes a part of a planar motor that drives the coarse movement stage WRS1 (wafer stage WST1) in the XY two-dimensional plane is provided.

As shown in FIG. 4, the armature unit 130 includes 16 armature coils 34 _{11 to} 34 ₄₄ . Each of these armature coils 34 _{11-34 44,} it is possible to supply current independently. The size of the armature coil 34 _{11-34 44,} as shown in FIG. 4, the length of one side is set so that the total length of the permanent magnets 28N, 28S, 32 a.

In the present embodiment, the armature unit 130 and the magnet unit 30 provided in the base BS described above constitute a planar motor. According to this planar motor, when the armature unit 130 is located at the position shown in FIG. 4, current is supplied to the armature coils 34 ₁₁ , 34 ₁₃ , 34 ₃₁ , and 34 ₃₃ , thereby supplying the armature unit 130 with the current. A driving force in the X-axis direction can be applied. Further, by supplying current to the armature coils 34 _22, 34 _24, 34 _42, 34 _44, it is possible to exert a force in the Y-axis direction to the armature unit 130. Further, by supplying current to the armature coils 34 ₁₂ , 34 ₁₄ , 34 ₃₂ , and 34 ₃₄ , a force in the Z-axis direction can be applied to the armature unit 130.

  In the present embodiment, even when the armature unit 130 is not located at the position shown in FIG. 4, the magnitude and direction of the current to be supplied to each coil are calculated according to the position of the wafer stage WST1, By changing the current according to the calculation result, a driving force in a desired direction can be applied regardless of the position of wafer stage WST1.

  Therefore, in a control device (not shown), each coil is applied to each coil based on the detection result of an interferometer unit (which will be described later) that detects the position of wafer stage WST1, and the moving direction and speed of wafer stage WST1. By controlling the supply current, wafer stage WST1 can be driven in a desired direction.

  In the present embodiment, as shown in FIG. 3A, a magnetic member 96 that generates a magnetic attractive force between the permanent magnets 28N and 28S is attached to the lower end of the armature unit 130. Yes. Due to the balance between the magnetic attractive force between the magnetic member 96 and the permanent magnets 28N and 28S, the own weight of the wafer stage WST1, and the flying force by the planar motor, the distance between the coarse movement stage WFS1 and the upper surface of the base BS is reduced. It is designed to be maintained at about several μm.

  As shown in FIGS. 3A and 3B, the fine movement stage WFS1 includes a table 92A for supporting the wafer W1 from below via a wafer holder (not shown), and a lower surface side of the table 92A. And a plate-like member 92B supported by suspension via a plurality of (for example, three) suspension support members 92C.

  On the upper surface of the table 92A, as shown in FIGS. 1 and 2, measurement of the relative positional relationship between the position on the wafer surface onto which the pattern formed on the reticle R is projected and the alignment system ALG (so-called base line) is performed. An aerial image measuring instrument FM1 is provided for performing (measurement) and the like. This aerial image measuring instrument FM1 corresponds to a reference mark plate of a conventional DUV exposure apparatus. Further, the -Y side surface and the -X side surface of fine movement table 92A are respectively formed with reflection surfaces by mirror finishing.

  Between fine movement stage WFS1 and coarse movement stage WRS1, as shown in FIGS. 3A and 3B, fine movement device 140 that finely drives fine movement stage WFS1 in the XY plane, and self-weight cancellation mechanism 22A1 To 22A3.

  The fine movement device 140 includes a movable element 50 suspended from a table 92A of the fine movement stage WFS1 via a plurality of (for example, three) suspension support members 94, and a support member 58 on the upper surface of the coarse movement stage WRS1. And a provided stator 60. In the state where wafer stage WST1 is assembled (the state shown in FIG. 3A), the movable element 50 and stator 60 are engaged (the stator 60 enters the movable element 50). The support member 58 that supports the stator 60 is inserted into an opening 92Ba (see FIG. 3B) formed in the plate-like member 92B of the fine movement stage WFS1.

  As shown in FIG. 6A, which shows the mover 50 in a perspective view, the mover 50 has a substantially X-shaped (cross-shaped) shape in plan view (viewed from above). Four magnet units 52A, 52B, 52C, and 52D, and four L-shaped holding members 48A, 48B, and 48C that hold these magnet units 52A to 52D in a predetermined positional relationship (as viewed from above). 48D.

  Each of the four magnet units 52A to 52D takes a magnet unit 52A as shown in FIG. 6A and includes a pair of magnetic pole portions 40A and 40B spaced apart by a predetermined interval in the Z-axis direction as representatively shown. I have. One magnetic pole portion 40A is in a state of being sandwiched between a flat plate-like member 42A, perpendicularly magnetized permanent magnets 44N and 44S provided on the lower surface of the plate-like member 42A, and the permanent magnets 44N and 44S. And a horizontally magnetized permanent magnet (interpolation magnet) 46 provided. The permanent magnet 44N has a lower surface (−Z side surface) as an N magnetic pole surface, and the permanent magnet 44S has a lower surface (−Z side surface) as an S magnetic pole surface. Further, in the permanent magnet (interpolation magnet) 46, the surface in contact with the permanent magnet 44N is an N magnetic pole surface, and the surface in contact with the permanent magnet 44S is an S magnetic pole surface. The operation of the interpolation magnet 46 is the same as that of the interpolation magnet 32 of the magnet unit 30 constituting the planar motor described above.

  The other magnetic pole portion 40B has the same configuration as the magnetic pole portion 40A, although it is vertically and horizontally symmetrical. That is, the magnetic pole portion 40B includes a plate-like member 42B and permanent magnets 44N, 44S, 46. The permanent magnet 44N has an upper surface (+ Z side surface) as an N magnetic pole surface, and the permanent magnet 44S has an upper surface ( The surface that contacts the permanent magnet 44N of the permanent magnet (interpolation magnet) 46 is the N magnetic pole surface, and the surface that contacts the permanent magnet 44S is the S magnetic pole surface.

  By configuring the magnet unit 52A as described above, a magnetic circuit as shown by an arrow in FIG. 6A is formed.

  The other magnet units 52B to 52D have the same configuration, but the magnet unit 52B and the magnet unit 52D are arranged such that the magnetic pole portion 40A is on the lower side (−Z side) and the magnetic pole portion 40B is on the upper side (+ Z side). Is different.

  In the mover 50, the direction in which the magnet units 52A and 52C are arranged and the direction in which the magnet units 52B and 52D are arranged are inclined by 45 ° with respect to the X axis and the Y axis (FIG. 7 ( A) to FIG. 7C).

  As shown in FIG. 6B, which shows the stator 60 in a perspective view, the stator 60 includes a housing 54 having an X shape (cross shape) in plan view (viewed from above). , And four armature coils 56 </ b> A to 56 </ b> D provided in the casing 54.

  The armature coils 56A to 56D are inserted between the magnetic pole portions 40A and 40B of the magnet units 52A to 52D, respectively, and a current flowing through each armature coil and a magnetic field generated by each magnet unit. As shown in FIGS. 7A to 7C, a force in a direction inclined by 45 ° with respect to the X axis and the Y axis (direction indicated by a black arrow) is generated by the electromagnetic interaction between them. Is possible.

  According to fine movement device 140 configured in this way, as shown in FIG. 7A, current of a predetermined magnitude in the clockwise direction is applied to armature coils 56A and 56D (in FIG. 7A, the direction of the current is (Indicated by the white arrow) and a current of a predetermined amount in the counterclockwise direction is supplied to the armature coils 56B and 56C, thereby forming the current flowing through each armature coil and each magnet unit. Due to the electromagnetic interaction with the magnetic field, a driving force in the direction indicated by the black arrow is generated. Then, due to the resultant force of these driving forces, a driving force in the direction indicated by the hatched arrow (+ Y direction) acts on the mover 50 (fine movement stage WFS1). Further, by supplying a current in the direction opposite to the above to each coil, a driving force in the −Y direction can be applied to the mover 50 (fine movement stage WFS1).

  Further, as shown in FIG. 7B, when a clockwise current is supplied to the armature coils 56A and 56B and a counterclockwise current is supplied to the armature coils 56C and 56D, a current flowing through each armature coil. And a magnetic field formed by each magnet unit generate a driving force in the direction indicated by the black arrow. Due to the resultant force of these driving forces, a driving force in the direction indicated by the hatched arrow (−X direction) acts on the movable element 50 (fine movement stage WFS1). Further, by supplying a current in the direction opposite to the above to each coil, a driving force in the + X direction can be applied to the mover 50 (fine movement stage WFS1).

  Further, as shown in FIG. 7C, when a counterclockwise current is supplied to the armature coils 56A and 56C and a clockwise current is supplied to the armature coils 56B and 56D, a current flowing through each armature coil. And a magnetic field formed by each magnet unit generate a driving force in the direction indicated by the black arrow. Then, due to the resultant force of these driving forces, the driving force in the direction indicated by the hatched arrow (the rotational direction around the Z axis (clockwise)) acts on the mover 50 (fine movement stage WFS1). It has become. Further, by supplying a current in the direction opposite to the above to each coil, it is possible to apply a driving force in the rotation direction (counterclockwise) about the Z axis to the mover 50 (fine movement stage WFS1). .

  Returning to FIGS. 3A and 3B, the three self-weight canceling mechanisms 22A1 to 22A3 (in FIG. 3A, the self-weight canceling mechanism 22A3 is not shown for convenience of illustration). Fine movement stage WFS1 is supported at three points in a non-contact manner on moving stage WRS1, and each includes a drive mechanism (voice coil motor) and the like. By these drive mechanisms, fine movement stage WFS1 is finely driven in the three-degree-of-freedom directions of Z-axis direction, θx direction (rotation direction around X axis), and θy direction (rotation direction around Y axis). These self-weight canceling mechanisms 22A1 to 22A3 are provided in a state of penetrating through an opening 92Bb formed in the plate-like member 92B of fine movement stage WFS1.

  Here, one of the self-weight canceling mechanisms 22A1 to 22A3 is taken up as a representative, and the configuration and the like will be described with reference to FIG. FIG. 8 shows a longitudinal sectional view of the self-weight canceling mechanism 22A1.

  As can be seen from FIG. 8, the self-weight canceling mechanism 22A1 includes a first member 62 fixed on the upper surface of the coarse movement stage WRS1, a second member 64 provided above the first member 62, and a first member 62. In a state where the third member 66 provided in the second member 64, the lower end surface (the −Z side surface) of the third member 66, and the upper surface (the + Z side surface) of the coarse movement stage WRS1 are connected. And a provided bellows 68.

  The first member 62 is a member having a substantially cylindrical outer shape, and a circular recess 62b having a predetermined depth is formed at the center of the lower end surface thereof, and the center of the inner bottom surface (upper surface) of the circular recess 62b is formed at the center. A circular through hole 62a that penetrates to the upper surface of the first member 62 is formed. That is, a stepped through hole is formed by the circular recess 62b and the through hole 62a.

  The second member 64 is a member having a substantially cylindrical outer shape, and a concave section 64c having a circular cross section having a predetermined depth is formed at the center of the lower end surface thereof. In addition, a chamber 64a having a circular section having the same diameter as that of the recess 64a is formed at a predetermined interval from the recess 64c to the + Z side. The third member 64 is formed with a circular hole 64b that communicates the inner bottom surface (upper surface) of the recess 64c with the inner lower surface of the chamber 64a. A vacuum preload (differential exhaust type) gas hydrostatic bearing 72 is fixed to the upper surface of the second member 64 (that is, the upper surface of the self-weight canceling mechanism 22A1), and the static pressure generated by the vacuum preload gas hydrostatic bearing 72 is generated. Due to the balance between the pressure and the dead weight of fine movement stage WFS1, fine movement stage WFS1 is supported in a non-contact manner by its own weight cancellation mechanism 22A1. In order to maintain a predetermined distance between the second member 64 and the fine movement stage WFS1, a mechanism that generates a magnetic repulsive force may be employed instead of the vacuum preload type static gas bearing 72.

  The third member 66 includes a disk-shaped tip portion 66a having a shape slightly smaller than the chamber 64a of the second member 64, a first shaft portion 66b provided at the center of the lower surface of the tip portion 66a, The first shaft portion 66b has a second shaft portion 66d having a larger diameter than the first shaft portion 66b provided at the lower end of the first shaft portion 66b, and has a Y-shaped cross section (and XZ cross section) as a T shape as a whole. ing.

  In the third member 66, a hinge part 66c is formed slightly above the center in the height direction of the first shaft part 66b, and the upper part of the hinge part 66c can swing with respect to the lower part. ing.

An air pad mechanism 74 is provided on the upper and lower surfaces of the tip portion 66a. The air pad mechanism 74 is not shown in the figure, but actually, the gas jetting port for jetting the gas and the gas jetted from the gas jetting port in a low vacuum (for example, about 10 ² to 10 ³ Pa). A low vacuum suction port for suction and a high vacuum suction port for suction with a high vacuum (for example, about 10 ⁻² to 10 ⁻³ Pa) are included. In addition, the supply of gas to the air pad mechanism 74 is performed via a pipe line (not shown) formed in the second member 64 and the first member 62 and a gas supply pipe (not shown) connected to the first member 62. This is performed by a gas supply device (not shown). The air pad mechanism 74 forms a predetermined clearance (for example, about several μm) between the distal end portion 66 a of the third member 66 and the upper and lower wall surfaces of the chamber 64 a of the second member 64.

  A plurality of air pad mechanisms 174 similar to the above are also provided on the inner wall surface of the first member 62 facing the second shaft portion 66 d of the third member 66. Thereby, a predetermined clearance (for example, about several μm) is formed between the inner wall surface of the first member 62 and the second shaft portion 66 d of the third member 66.

  A gas supply pipe (not shown) is connected to the bellows 68, gas is supplied from a gas supply device (not shown) via the gas supply pipe, and the inside of the bellows 68 is maintained at a predetermined pressure.

  Further, a voice coil motor 78 is provided between the first member 62 and the second member 64. The voice coil motor 78 includes a stator 76B including an armature coil fixed to the upper surface of the first member 62, and a mover 76A having a permanent magnet fixed to the inner surface of the side wall of the recess 64c of the second member 64. Contains.

  The voice coil motor 78 can change the relative positional relationship in the Z-axis direction between the first member 62 and the second member 64 (and the third member 66).

  An encoder 83 is provided between the third member 66 and the first member 62. The encoder 83 is provided on the inner surface of the side wall of the scale 82B provided at the lower end of the third member 66 and the recess 62b of the first member 62, and is reflected by the irradiation system for irradiating light to the scale 82B and the scale 82B. And a sensor head 82A having a light receiving element for receiving the received light. The encoder 83 can detect the relative positional relationship between the first member 62 and the third member 66 in the Z-axis direction.

  The other self-weight canceling mechanisms 22A2, 22A3 and the self-weight canceling mechanism 22A1 have the same configuration.

  In the self-weight canceling mechanisms 22A1 to 22A3 configured as described above, the fine movement stage WFS1 is supported by the bellows 68 constituting each of the fine movement stage WFS1 at three points with low rigidity via the third member 66, the second member 64, and the air pad mechanism 72. be able to. Here, since the rigidity of the bellows 68 is not completely zero, the voice coil motor 78 can be finely driven so as to cancel the rigidity of the bellows 68 based on the measurement result of the encoder 83. Further, in a control device (not shown), in order to apply a driving force in the Z-axis direction to fine movement stage WFS1, a current for driving in the Z-axis direction is applied to the coil of stator 76B of voice coil motor 78 in the above rigidity. Can be supplied in a combined state with a current for canceling the current.

  Returning to FIG. 2, the power receiving / radiating arm 20 </ b> A is provided at the + Y side end of the upper surface of the coarse movement stage WRS <b> 1. As shown in FIG. 2, the power receiving / dissipating arm 20A has a length (width) in the X-axis direction that is longer (wider) than the interval between the power transmission / waste heat frames 24A, 24B. Therefore, a part of the upper surface is always in a state of facing the lower surface of at least one of the power transmission / waste heat frames 24A, 24B.

  Here, the internal configuration of the power receiving / radiating arm 20A will be described with reference to FIGS. 9, 10 and other drawings together with the configurations of the power transmission / waste heat frames 24A, 24B. FIG. 9 is a diagram showing a state where the power receiving / radiating arm 20A is viewed from the + X side together with the internal configuration, and FIG. 10 is a diagram showing an XZ section of the power transmitting / waste heat arms 24A, 24B together with the power receiving / radiating arm 20A. It is.

  As shown in FIG. 9, a liquid temperature adjustment system 86, a power input system 84, a signal transmission system 88, and a head unit 90 constituting an encoder are provided inside the power receiving / radiating arm 20A. Yes.

  The liquid temperature control system 86 is a heat source of the coarse movement stage WRS1 (for example, the armature coil of the armature unit 130 that constitutes a planar motor, the armature coils 56A to 56D that constitute the fine movement mechanism 140, and the self-weight canceling mechanism 22A1. A feedback part 86A, which is laid near the voice coil motor included in 22A3) and connected to one end of the cooling pipe 202 through which the coolant passes, a circulation pump 86B, and a feedback part 86A of the circulation pump 86B. Temperature control unit 86C provided on the opposite side of the cooling pipe 202 and connected to the other end of the cooling pipe 202, a Peltier element 86D provided in contact with the temperature control unit 86C, and the temperature of the Peltier element 86D And a heat dissipating part 86E provided in contact with the surface opposite to the adjustment part 86C.

  The temperature control unit 86C is a tank that can store a predetermined amount of coolant, and the coolant stored in the temperature control unit 86C is cooled to a predetermined temperature by a Peltier element 86D. The heat radiating portion 86E has an upper surface substantially parallel to the XY plane (parallel to the XY plane when the wafer stage WST is disposed on the base BS), and is opposite to the temperature adjustment portion 86C of the Peltier element 86D. The heat of the side surface is released to the outside by radiation. The heat radiating portion 86E is actually provided over the entire area of the power receiving / radiating arm 20A in the X-axis direction (the direction perpendicular to the paper surface).

  On the other hand, as shown in FIG. 10, a waste heat portion 186 that absorbs heat from the heat radiating portion 86E is provided inside one power transmission / waste heat frame 24A. The waste heat section 186 is provided over the entire Y-axis direction of the power transmission / waste heat frame 24A. Accordingly, in a state where the power receiving / radiating arm 20A and the power transmission / waste heat frame 24A are vertically opposed, a part of the waste heat part 186 and a part of the heat radiating part 86E are always opposed to each other. For example, a refrigerant is supplied to the waste heat unit 186 so that the heat radiated from the heat radiating unit 86E can be efficiently absorbed. A similar waste heat section 286 is also provided in the other waste heat frame 24B.

  Returning to FIG. 9, the power input system 84 includes a receiving unit 84A, a power conversion unit 84B, an A / D conversion / amplification unit 84C, and a connector 84D. The receiving unit 84A is provided with a coil for receiving power wirelessly. This coil is provided over the entire area of the power receiving / radiating arm 20A in the X-axis direction (direction perpendicular to the paper surface).

  In contrast, one power transmission / waste heat frame 24A shown in FIG. 10 incorporates a transmission unit 184 including a power transmission coil. In a state where the power transmission coil in the transmission unit 184 and the power reception coil in the reception unit 84A face each other, power supplied from a power supply device (not shown) is transmitted between the power transmission coil and the power reception coil. Wirelessly transmitted between them. Since this wireless power transmission method is disclosed in Japanese Patent Publication No. 5-59660, Japanese Patent Laid-Open No. 58-115945, and the like, description thereof is omitted. The other power transmission / waste heat frame 24B also includes a transmission unit 284 including a similar power transmission coil. The power transmission coil in the transmission unit 284 and the power reception coil in the reception unit 84A are vertically moved. In an opposed state, wireless power transmission is performed between the power transmission coil and the power reception coil.

As described above, the power supplied from the power transmission / waste heat frame 24A or 24B and received by the receiving unit 84A of the power input system 84 in FIG. 9 is converted into a current by the power converting unit 84B, and then converted into an A / D conversion / Coil of a driving mechanism (for example, coils 34 ₁₁ to 34 ₄₄ constituting the armature unit 130 of the planar motor) that is A / D converted and amplified by the amplifier 84C and drives the coarse movement stage WRS1 via the connector 84D. Or a coil included in the stator of the voice coil motor 78 constituting the self-weight canceling mechanism 22A1 to 22A3, an armature coil 56A to 56D included in the fine movement mechanism 140, and the like. Further, this current is also supplied to the Peltier element 86D and the pump 86B constituting the liquid temperature control system 86 described above. Further, when the wafer holder that holds the wafer W1 on the fine movement stage WFS1 is an electrostatic chuck type wafer holder, this current can be supplied to the wafer holder. In this case, the current supply between the coarse movement stage WRS1 and the fine movement stage WFS1 can be performed by the above-described wireless power transmission method.

  The signal transmission system 88 includes a connector 88A, an A / D conversion / amplification unit 88B, a radio signal generation unit 88C, and a transmission unit 88D.

  On the other hand, as shown in FIG. 10, one power transmission / waste heat frame 24A is provided with a reception unit 188 corresponding to the transmission unit 88D, and the other power transmission / waste heat frame 24B has a reception unit 288. Is provided.

  According to the signal transmission system 88 and the reception unit 188 (or 288), the measurement result measured by a sensor such as the aerial image measuring instrument FM1 provided in a part of the fine movement stage WFS1 is the transmission unit 88D of the signal transmission system 88. To the receiving unit 188 (or 288). In this case, for the exchange of signals between the transmitter 88D and the receiver 188 (or 288), for example, infrared light can be used, and other radio waves, sound waves, and the like can also be used.

  The signal transmission system 88 is configured to be able to transmit and receive, and a control signal from a control device (not shown) for wafer stage WST1 is transmitted via signal transmission system 88 and reception unit 188 (or 288). Is also possible.

  The receiving unit 188 (288) does not have to be provided in the entire Y-axis direction of the power transmission / waste heat frame 24A (24B), and the range in which the transmitting unit 88D is located when performing aerial image measurement or the like on the wafer stage WST1. It should be provided in.

  As shown in FIG. 11, the head unit 90 actually detects a plurality of Y-axis direction measurement heads 90y for measuring position information about the Y-axis direction and position information about the X-axis direction. And a plurality of X-axis direction measuring heads 90x.

  The plurality of Y-axis direction measurement heads 90y are provided at predetermined intervals in the X-axis direction, and the X-axis direction measurement heads 90x are provided at predetermined intervals at positions that do not interfere with the head 90y. .

  In contrast, a scale 190 is provided on the bottom surface of one power transmission / waste heat frame 24A, and a scale 290 is provided on the bottom surface of the other power transmission / waste heat frame 24B. These scales 190 and 290 are two-dimensional lattices formed at predetermined intervals in the X direction and the Y direction, provided from the vicinity of the + Y side ends of the power transmission / waste heat frames 24A and 24B to the vicinity of the center.

  According to the head unit 90 and the scales 190 and 290, the X-axis direction position of the wafer stage WST1 is measured at the head 90x facing the scale 190 or 290 among the plurality of X-axis direction measurement heads. The head 90y facing the scale 190 or 290 among the plurality of Y-axis direction measuring heads can measure the Y-axis direction position of the wafer stage WST1. It should be noted that the interval between the adjacent heads 90x and the interval between the adjacent heads 90y are set so as to allow position measurement using the scale 190 (or 290) at the same time. In addition, although the case where a plurality of heads constituting the head unit 90 are provided has been described above, only one head may be provided as long as the measurement range can be covered.

  Returning to FIG. 2, the other wafer stage WST2 has the same configuration as wafer stage WST1 described above. That is, wafer stage WST2 passes through coarse movement stage WRS2 similar to coarse movement stage WRS1, and three self-weight canceling mechanisms 22B1, 22B2, and 22B3 provided at three positions not on a straight line on coarse movement stage WRS2. A fine movement stage WFS2 similar to the fine movement stage WFS1 is provided. An aerial image measuring instrument FM2 is provided on the upper surface of fine movement stage WFS2. Further, a fine movement mechanism similar to the fine movement mechanism 140 described above is provided between the coarse movement stage WRS2 and the fine movement stage WFS2, and in the vicinity of the + Y side end of the coarse movement stage WRS2, the same as the power reception / heat radiation arm 20A described above. Power receiving / radiating arm 20B is provided. Also in the power receiving / radiating arm 20B, in the same manner as the power receiving / radiating arm 20A described above, the heat generated in the wafer stage WST2 is transferred between the power transmitting / waste heat frames 24A, 24B, and the electric power is transmitted wirelessly. Transmission / reception of signals detected by the aerial image measuring instrument FM2 on the wafer stage WST2 and position detection of the wafer stage WST2 in the XY plane can be performed.

  Next, an interferometer system for detecting the positions in the XY plane of wafer stages WST1 and WST2 will be described.

  As shown in FIG. 2, the interferometer system includes an X-axis interferometer 18A that irradiates a measurement beam parallel to the X axis that passes through the projection center of the projection optical system PO, and a Y axis that passes through the projection center. A Y-axis interferometer 16 that irradiates a parallel measurement beam and an X-axis interferometer 18B that irradiates a measurement beam parallel to the X axis that passes through the detection center of the alignment system ALG are included.

  According to the interferometer system configured as described above, when wafer stage WST1 and wafer stage WST2 are at the positions shown in FIG. 2, the length measurement beam from X-axis interferometer 18A constitutes wafer stage WST1. The mirror-processed -X side reflecting surface of fine movement stage WFS1 is irradiated, and the length measurement beam from Y-axis interferometer 16 is irradiated to the mirror-processed -Y side reflecting surface of fine movement stage WFS1. Further, the length measuring beam from X-axis interferometer 18B is irradiated onto the mirror-processed -X side reflecting surface of fine movement stage WFS2 constituting wafer stage WST2. Note that the mirror-processed -Y side reflecting surface of fine movement stage WFS2 is not irradiated with the measurement beam of the interferometer in the state of FIG.

  When the positional relationship between wafer stage WST1 and wafer stage WST2 is opposite to that shown in FIG. 2, the measurement beam of interferometer 18A is irradiated on the -X side reflecting surface of fine movement stage WFS2, and the -Y side The length measurement beam of the interferometer 16 is irradiated on the reflection surface, and the length measurement beam of the interferometer 18B is irradiated on the -X side reflection surface of the fine movement stage WFS1. Here, the interferometers 18A and 18B are multi-axis interferometers having a plurality of measurement axes. In addition to the measurement of positional information of the wafer stages WST1 and WST2 in the X-axis direction, rolling (rotation around the Y axis (θy rotation) )) And yawing (rotation in the θz direction) can be measured. The interferometer 16 is also a multi-axis interferometer, and in addition to measuring position information of the wafer stages WST1 and WST2 in the Y-axis direction, pitching (rotation around the X axis (θx rotation)) and yawing (rotation in the θz direction). Can be measured.

  A control device (not shown) manages the position of the fine movement stage WFS1 (or WFS2) in the XY plane with high accuracy based on the measurement values of the interferometers 18A and 16 at the later-described exposure, and at the later-described alignment (and later) At the time of wafer replacement), the position of the fine movement stage WFS2 (or WFS1) in the XY plane is determined with high accuracy using the measurement value of the interferometer 18B and the Y-axis direction measurement head 90y constituting the head unit 90 described above. It comes to manage.

  By the way, in the present embodiment, when the planar motor for driving the coarse movement stages WRS1 and WRS2 is not used (when the base BS is transported, when the exposure apparatus is assembled, during maintenance, etc.), the upper surface of the base BS is covered. A magnetic flux leakage prevention plate 36 as shown in FIG.

  The magnetic flux leakage prevention plate 36 is a plate made of a non-magnetic member, and prevents the magnetic flux generated from the magnet unit 30 from affecting the outside. As shown in FIG. It has a thickness that can cover the magnetic circuit to be formed.

  By providing the magnetic flux leakage prevention plate 36 in this way, it is possible to prevent the occurrence of a situation in which a tool or the like used by an operator is suddenly attracted to the magnet unit 30 when the planar motor is not used. It is possible to avoid the influence of the magnetic flux on the medical device and the like, and the influence of the magnetic flux on the other apparatus used in the exposure apparatus when transporting the base.

  Next, a series of operations including a parallel processing operation such as an exposure operation for the wafer on one wafer stage and an alignment operation for the wafer on the other wafer stage, which is performed by the exposure apparatus 10 of the present embodiment, This will be described with reference to FIGS. 2 and 12A to 13B.

  FIG. 2 shows a state where the wafer alignment operation is being performed on wafer W2 on wafer stage WST2 in parallel with the exposure operation being performed on wafer W1 on wafer stage WST1. .

  Prior to this FIG. 2, when wafer stage WST2 is in a predetermined loading position, the wafer loader (not shown) unloads the exposed wafer placed on wafer stage WST2 from wafer stage WST2 and A new wafer W2 is loaded onto wafer stage WST2 (ie, wafer exchange).

  The control device (not shown) manages the X position of wafer stage WST2 based on the measurement value of interferometer 18B, and among a plurality of heads 90y for Y-axis direction position measurement provided on wafer stage WST2. , While managing the Y position of wafer stage WST2 based on the measurement value measured using the head facing either scale 190 or 290, using alignment system ALG, a plurality of specific multiples on wafer W2 Position information of an alignment mark (sample mark) attached to the shot area (sample shot area) is detected.

  Next, based on the detection result and the design position coordinates of the specific shot area, the control device performs wafer calculation by statistical calculation using the least square method disclosed in, for example, Japanese Patent Application Laid-Open No. 61-44429. EGA (Enhanced Global Alignment) is performed to obtain the array coordinates of all shot areas on W2. Prior to this EGA, the control device can also perform baseline measurement using the aerial image measuring instrument FM2. Here, the measurement result of the aerial image measuring instrument FM2 is wirelessly transmitted from the transmission unit provided in the power reception / radiation arm 20B to the reception unit 188 or 288 provided in the power transmission / waste heat frame 24A or 24B.

  In the wafer exchange and alignment operations described above, the control device moves the coarse movement stage WRS2 through the above-described planar motor based on the detection result by the interferometer 18B and the head 90y (scale 190 or 290). And the fine movement stage WFS2 is finely driven via the fine movement mechanism and the self-weight cancellation mechanism 22B1 to 22B3.

  In parallel with this wafer exchange and alignment, on the wafer stage WST1 side, an acceleration start position for exposure of each shot area on the wafer W1 placed on the wafer stage WST1 based on the already performed wafer alignment result. A step formed between the shots in which the wafer stage WST1 is moved and a pattern formed on the reticle R by relatively scanning the reticle R (reticle stage RST) and the wafer W1 (wafer stage WST1) in the Y-axis direction on the wafer W1. A step-and-scan type exposure operation is repeated, in which a scanning exposure operation for transferring to a shot area via the projection optical system PO is repeated.

  During the above-described step-and-scan exposure operation, the control device drives coarse movement stage WRS1 with a long stroke via the above-described planar motor, and fine movement stage WFS1 with fine movement mechanism 140 and self-weight cancellation mechanism 22A1. Relative driving is performed in the X, Y, Z, θx, θy, and θz directions relative to the coarse movement stage WRS1 via 22A3. Of course, when driving in the Z, θx, and θy directions, the measurement result of the wafer focus sensor is taken into consideration.

  Since the procedure of the exposure operation itself is the same as that of a normal scanning stepper, further detailed description is omitted.

  In the wafer alignment operation for wafer W2 on wafer stage WST2 and the exposure operation for wafer W1 on wafer stage WST1, the wafer alignment operation usually ends first. Therefore, the control device drives wafer stage WST2 in the −Y direction and the −X direction via the planar motor after the wafer alignment is completed. Then, wafer stage WST2 is moved to a predetermined standby position (position of wafer stage WST2 shown in FIG. 12A), and waits at that position.

  Thereafter, when the exposure operation for wafer W1 on wafer stage WST1 is completed, the control device moves wafer stage WST1 in the + X direction and the + Y direction via a planar motor. FIG. 12B shows a state immediately before the measurement beam from the interferometers 18A, 16 does not hit the -X side reflection surface and the -Y side reflection surface of wafer stage WST1. In this state, since any one of the heads 90x and any one of the heads 90y are opposed to the scale 290, the control device switches the position measurement of the wafer stage WST1 from the interferometers 18A and 16 to the heads 90x and 90y. deep. Then, at the stage where the length measurement beam from interferometer 16 does not hit the -Y side reflection surface of wafer stage WST1, the length measurement beam from interferometer 16 strikes the -Y side reflection surface of wafer stage WST2. The control device switches the measurement of the position of the wafer stage WST2 in the Y-axis direction to the interferometer 16 at this stage.

  Next, as shown in FIG. 13A, the control device moves wafer stage WST2 through a planar motor based on the measurement result in the Y-axis direction by interferometer 16 and the measurement result in the X-axis direction by head 90x. To move directly below the projection optical system PO. During this movement, the measurement beam from the interferometer 18A is irradiated on the −X side reflection surface of the fine movement stage WFS2, so that the position measurement of the wafer stage WST2 in the X-axis direction is switched from the head 90x to the interferometer 18A. .

  On the other hand, on the wafer stage WST1 side, at the position shown in FIG. 12B, the interferometers 18A and 16 are switched to the measurement by the head 90x for X-axis direction measurement and the head 90y for Y-axis direction measurement. The position of wafer stage WST1 in the X-axis direction is measured using head 90x and scale 290 facing scale 290, and the Y-axis direction of wafer stage WST1 is measured using head 90y and scale 290 facing scale 290. Measure wafer position and move wafer stage WST1 in the + Y direction.

  Then, as shown in FIG. 13 (A), when the measurement beam of the interferometer 18B is irradiated on the -X side reflection surface of the fine movement stage WFS1, the measurement in the Y-axis direction is switched to the interferometer 18B. Wafer stage WST1 is moved to the position (wafer replacement position) shown in FIG.

  Thereafter, on the wafer stage WST2 side, a step-and-scan exposure operation is performed on the wafer W2 in the same manner as the wafer W1 described above, and on the wafer stage WST1 side, as described above, the wafer is processed. Exchange and wafer alignment operations are performed.

  As described above, in the exposure apparatus 10 of this embodiment, the wafer stage WST1 and WST2 are exchanged, the exposure operation for the wafer on one wafer stage, and the wafer exchange and wafer alignment operation on the other wafer stage. Are performed in simultaneous parallel processing.

  In the present embodiment, during the parallel processing, the upper surface of the power receiving / radiating arm 20A of the wafer stage WST1 and the lower surface of at least one of the power transmission / waste heat frames 24A, 24B are maintained facing each other. In the opposed portions, it is possible to supply power to wafer stage WST1, transfer heat generated in wafer stage WST1, and transmit / receive signals.

  Also in wafer stage WST2, as with wafer stage WST1, the upper surface of power receiving / radiating arm 20B and the lower surface of at least one of power transmission / waste heat frames 24A, 24B are opposed to each other. In FIG. 5, it is possible to supply power to wafer stage WST2, transfer heat generated in wafer stage WST2, and transmit / receive signals.

  As described above in detail, according to the present embodiment, the power transmission / waste heat frames 24A and 24B can always absorb the heat radiated from the heat radiating portion 86E of the wafer stage WST1 (WST2), so that the wafer stage WST1. It becomes possible to suppress the influence on the exposure accuracy due to the heat generated in (WST2). In this case, unlike the conventional case, it is not necessary to connect a pipe (tube) for supplying a coolant to wafer stage WST1 (WST2) from the outside, so that a decrease in movement accuracy of wafer stage WST1 (WST2) due to the tension of the pipe is prevented. In this respect, the exposure accuracy can be maintained with high accuracy.

  Further, in the present embodiment, a power input system 84 for wirelessly inputting power to the wafer stages WST1 and WST2 is provided, and the power transmission / waste heat frames 24A and 24B are directed toward the power input system receiver 84A. Since transmitters 184 and 284 that output power wirelessly are provided, wirings for supplying current to wafer stages WST1 and WST2 and a driving mechanism that drives each component are connected to wafer stages WST1 and WST2 from the outside. It is not necessary to prevent the movement accuracy of wafer stages WST1 and WST2 from being lowered due to the tension of the wiring. From this point as well, it is possible to improve the exposure accuracy.

  Further, in the present embodiment, a transmitter 88D that wirelessly transmits signals output from measuring instruments (for example, aerial image measuring instruments FM1 and FM2) provided on the stages to the wafer stages WST1 and WST2, Since the heat frames 24A and 24B are provided with receiving units 188 and 288 that receive signals from the transmitting unit 88D, wiring for extracting signals output from the detectors is connected from outside the wafer stages WST1 and WST2. There is no need. Therefore, in this case as well, it is possible to prevent a decrease in stage movement accuracy due to the tension of the wiring as in the conventional case, and thus it is possible to improve the exposure accuracy.

  In addition, according to the present embodiment, two wafer stages capable of highly accurate positioning are provided as described above, and the two wafer stages WST1 and WST2 are directly below the projection optical system PO (exposure position) and directly below the alignment system ALG. Therefore, the wafer exposure operation and the wafer alignment operation can be performed in parallel. Therefore, high-precision exposure can be performed with high throughput.

  In addition, according to the present embodiment, wafer stage WST1 (WST2) includes coarse movement stage WRS1 (WRS2) and fine movement stage WFS1 (WFS2), and includes a planar motor, fine movement mechanism 140, and self-weight cancellation mechanisms 22A1 to 22A3 ( In all the voice coil motors constituting 22B1 to 22B3), the coil side is provided on the coarse movement stage WRS1 (WRS2) side, so that wiring for supplying a driving current to fine movement stage WFS1 (WFS2) is provided. No need to connect. Therefore, since the wiring is not connected from the coarse movement stage to the fine movement stage that requires high precision positioning accuracy, it is possible to realize more accurate wafer positioning. In addition, since the coil is provided only on the coarse movement stage side, it is only necessary to supply the refrigerant only to the coarse movement stage side. Therefore, it is necessary to provide a refrigerant supply pipe between the coarse movement stage and the fine movement stage. In this respect, it is possible to achieve highly accurate wafer positioning.

  Further, in this embodiment, each of the voice coil motors constituting the fine movement mechanism 140 generates a driving force in a direction intersecting with the X axis and the Y axis by 45 °, and the fine movement stages WFS1 and WFS2 are converted into the X axis by the resultant force of the driving forces. , Driven in the Y-axis direction. Therefore, the current consumed by one voice coil motor can be suppressed as compared with the case of using a voice coil motor that simply generates driving force in the X-axis direction or a voice coil motor that generates driving force in the Y-axis direction. . Accordingly, since heat generation in the motor can be suppressed, it is possible to suppress a decrease in exposure accuracy due to heat generation.

  In this embodiment, since the protective plate 26 is provided on the base BS, the wafer stage falls on the base BS when the current supply to the coils constituting the armature unit 130 of the planar motor is stopped. In this case, the permanent magnet on the base BS can be prevented from being damaged.

  In the above embodiment, the heads 90x and 90y and the scales 190 and 290 are provided, and the measurement of the wafer stages WST1 and WST2 is performed at a place where the measurement beam is not hit by the interferometer. Even when wafer stages WST1 and WST2 move between the projection optical system PO and the alignment system ALG, the arrangement of interferometers as shown in FIG. 2 is sufficient, and the number of interferometers can be reduced. Is possible.

  In the above embodiment, heat is generated from wafer stage WST1 (WST2) in heat radiating portion 86E provided in liquid temperature control system 86 to which cooling pipe 202 that circulates refrigerant in wafer stage WST1 (WST2) is connected. Although the case where heat is radiated has been described, the present invention is not limited to this, and heat radiated directly from wafer stage WST1 (WST2) is not provided without providing cooling pipe 202, heat radiating portion 86E, or the like. May be absorbed.

  In the above embodiment, plate-like members having a narrow width in the X-axis direction are used as the power transmission / waste heat frames 24A and 24B. However, the present invention is not limited to this, and it becomes an obstacle during exposure and alignment. Otherwise, the size (width in the X-axis direction) can be increased. In this case, the area of the heat radiating portion 86E can be reduced (localized), and the power transmission / waste heat frame can be made substantially the same area as the upper surface of the base BS. The power transmission / waste heat frame is not limited to being provided on the ceiling side (above wafer stage WST), but is provided on the floor side (below wafer stage WST), and heat radiating portion 86E is provided on the lower surface side of wafer stage WST. It's also good. Moreover, it is good also as employ | adopting the frame-shaped power transmission / waste heat frame which integrated two power transmission / waste heat frame 24A, 24B in the said embodiment.

  Moreover, although the said embodiment demonstrated the case where a refrigerant | coolant was supplied to the waste heat parts 186 and 286 of power transmission and waste heat frame 24A, 24B and the waste heat parts 186 and 286 were cooled, it is not restricted to this, For example, waste It is good also as providing cooling mechanisms, such as a Peltier device, in a heat part. Further, if only focusing on the fact that the waste heat portions 186, 286 of the power transmission / waste heat frames 24A, 24B absorb the heat radiated from the heat radiating portion, the refrigerant need not be supplied.

  In the above-described embodiment, the case where any one of the power transmission / waste heat frames 24A, 24B is always opposed (opposed) to the waste heat units 186, 286 has been described. As long as the heat radiated from 286 is absorbed by the power transmission / waste heat frames 24A and 24B, there may be a slight deviation from the opposed state. That is, in the above embodiment, the case where the power transmission / waste heat frames 24A and 24B are provided over the entire range of movement of the wafer stage WST in the Y-axis direction has been described. The power transmission / waste heat frames 24A and 24B may be provided over a range smaller than the moving range of the direction. In this case, it is not limited to the case where the radiated heat is always absorbed, and for example, there may be a case where the heat is not absorbed for a short time. Specifically, for example, at least within a range in which the wafer stage WST1 (WST2) moves when performing exposure on the wafer on the wafer stage WST1 (WST2), the discharge / waste heat frame 24A (24B) and the waste heat section 186 (286) can be opposed to each other.

  In the above embodiment, the case where the power transmission / waste heat frames 24A, 24B extend in the Y-axis direction and the power reception / heat radiation arms 20A, 20B extend in the X-axis direction has been described. The waste heat frames 24A and 24B may extend in the X-axis direction, and the power receiving / radiating arms 20A and 20B may extend in the Y-axis direction. In addition to the X and Y axis directions, one of the power transmission / waste heat frames 24A, 24B and the power receiving / radiating arms 20A, 20B extends in a predetermined direction in the XY plane, and the other extends in the predetermined direction in the XY plane. It only has to extend in the direction of crossing.

  In the above-described embodiment, the case where the armature unit of the planar motor is provided on the wafer stage side has been described. However, the present invention is not limited to this. good. Moreover, although the said embodiment demonstrated the case where the coil side was provided in the coarse movement stage WRS1 (WRS2) side in all the voice coil motors which comprise the fine movement mechanism 140 and the self-weight cancellation mechanisms 22A1 to 22A3 (22B1 to 22B3), However, the present invention is not limited to this, and even if wiring is provided between the coarse movement stage and the fine movement stage, if the movement of the fine movement stage is not affected, a coil may be provided on the fine movement stage side.

  In the above embodiment, the power transmission / waste heat frames 24A, 24B and the power receiving / radiating arms 20A, 20B are wirelessly transmitted with power, transferred with heat, transmitted / received detection signals from the detector, and interferometers. However, the present invention is not limited to this, and at least one of the above may be performed.

  In the above embodiment, the case where a thick plate as shown in FIG. 5 is used as the magnetic flux leakage prevention plate 36 has been described. However, the present invention is not limited to this, and a thin plate is used, and the plate is used as a spacer. It is good also as providing above base BS so that the height of the upper surface may become the same height as the upper surface of the magnetic flux leakage prevention plate 36 of FIG.

  In the above embodiment, the interferometer system and the encoder (head unit 90 and scales 190 and 290) are used together to measure the position of wafer stages WST1 and WST2. However, the present invention is not limited to this, and the interferometer system is not limited thereto. By increasing the number of interferometers, the position of wafer stages WST1 and WST2 may be measured using only the interferometer system. Conversely, the position of wafer stages WST1 and WST2 may be measured using only the encoder.

  In the above embodiment, in the mover 50 constituting the fine movement device 140, the direction in which the magnet units 52A and 52C are arranged and the direction in which the magnet units 52B and 52D are arranged are inclined by 45 ° with respect to the X axis and the Y axis. The direction in which the magnet units 52A and 52C are arranged and the direction in which the magnet units 52B and 52D are arranged intersect the X axis and the Y axis in the XY plane. The angle is not limited as long as it is a direction to be performed. In the above embodiment, each voice coil motor constituting the fine movement device 140 generates a driving force in a direction inclined by 45 ° with respect to the X axis and the Y axis in the XY plane. The angle is not limited as long as each driving force is generated in a direction intersecting the X axis and the Y axis in the XY plane.

  In the above embodiment, the protective plate 26 made of a nonmagnetic material is provided on the upper surface of the base BS so as to cover the magnet unit 30 from above. However, the present invention is not limited to this, and the lower surfaces of the wafer stages WST1 and WST2 A protective plate may be provided. This protective plate prevents direct contact between wafer stages WST1 and WST2 and permanent magnets 28N, 28S, and 32 and prevents damage to permanent magnets 28N, 28S, and 32, similarly to protective plate 26 of the above embodiment. It becomes possible to do.

  In the above embodiment, the case where the present invention is applied to a wafer stage apparatus having two wafer stages has been described. However, the present invention is not limited to this, and a wafer stage apparatus having only one wafer stage is used. The present invention can be applied, and the present invention can also be applied to a wafer stage apparatus having three or more wafer stages.

  In the above-described embodiment, the case where only one alignment system ALG is provided has been described. However, the present invention is not limited to this, and a configuration in which two alignment systems ALG are provided corresponding to wafer stages WST1 and WST2 can also be adopted. is there.

  Instead of the wafer focus sensor of the above embodiment, a surface shape detection device may be provided on the body holding the projection optical system PO. As this surface shape detection apparatus, for example, an irradiation system that obliquely enters a linear beam longer than the diameter of the wafer, for example, and a detector that receives reflected light of the beam irradiated by the irradiation system, such as a one-dimensional A light receiving system including a CCD sensor or a line sensor is included. Therefore, based on the same principle as the detection principle of a known multi-point AF system, with a plurality of point-like irradiation areas as measurement points, the wafer Z position at each measurement point (perpendicular to a predetermined plane (XY plane) on which the wafer moves) Position information regarding the Z-axis direction) can be detected. In this case, before the exposure starts, when the wafer passes through the irradiation region of the surface shape detection device, the measurement value (wafer position) by the interferometer system or the head unit 90 and the detection result by the detection device are used. Thus, it is possible to calculate the distribution of the Z position information on the wafer surface and control the position and orientation of the wafer stage in the Z-axis direction based on the calculation result during the exposure operation.

  In the above embodiment, a planar motor is used as a driving device for driving wafer stages WST1 and WST2 with a long stroke. However, the present invention is not limited to this, and a linear motor may be used.

  The wafer stages WST1 and WST2 of the above embodiment are not connected with wiring and piping, but can directly supply power to the wafer stages WST1 and WST2 in an emergency such as failure. Wiring / piping ports can be provided in part of wafer stages WST1, WST2.

  In the above-described embodiment, the case where the fine movement mechanism 140 and the self-weight canceling mechanisms 22A1 to 22A3 and 22B1 to 22B3 are provided on the wafer stages WST1 and WST2 has been described. Instead of the fine movement mechanism and the self-weight cancellation mechanism, a normally used voice coil motor may be provided. As the voice coil motor in this case, either a moving magnet type voice coil motor or a moving coil type voice coil motor can be used. However, as described in the above embodiment, the moving coil type is not used. A magnet type voice coil motor can be employed.

  In the above-described embodiment, the case where the movable body apparatus of the present invention is employed in the wafer stage apparatus has been described. However, the present invention is not limited to this, and the stage apparatus of the present invention can also be employed on the reticle stage RST side.

  In the above-described embodiment, the case where the present invention is applied to the wafer stage that holds the wafer surface parallel to the horizontal plane (XY plane) has been described. However, the present invention is not limited thereto, and the wafer surface is substantially parallel to the plane orthogonal to the XY plane. It is also possible to employ the present invention for a wafer stage (vertical stage) held in parallel.

  Note that the present invention can also be applied to an immersion exposure apparatus disclosed in International Publication No. 2004/53955 pamphlet. In addition, the exposure apparatus of the above embodiment may include a measurement stage separately from the wafer stage as disclosed in, for example, pamphlet of International Publication No. 2005/074014. In this case, the movable body apparatus of the present invention can be employed in measurement stage MST together with wafer stage WST or instead of wafer stage WST.

  In the above-described embodiment, the case where the present invention is applied to a scanning exposure apparatus such as a step-and-scan method has been described, but it is needless to say that the scope of the present invention is not limited to this. That is, the present invention can be applied to a step-and-repeat projection exposure apparatus, a step-and-stitch exposure apparatus, a proximity exposure apparatus, a mirror projection aligner, and the like.

  The use of the exposure apparatus is not limited to the exposure apparatus for semiconductor manufacturing, but for example, an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern to a square glass plate, an organic EL, a thin film magnetic head, an image sensor (CCD, etc.), micromachines, DNA chips and the like can also be widely applied to exposure apparatuses. Further, in order to manufacture reticles or masks used in not only microdevices such as semiconductor elements but also light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc., glass substrates or silicon wafers, etc. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern.

  In the above embodiment, the case where EUV light having a wavelength of 11 nm is used as exposure light has been described. However, the present invention is not limited thereto, and EUV light having a wavelength of 13 nm may be used as exposure light. In this case, in order to secure a reflectance of about 70% with respect to EUV light having a wavelength of 13 nm, it is necessary to use a multilayer film in which molybdenum Mo and silicon Si are alternately laminated as the reflection film of each mirror.

  In the above embodiment, SOR (Synchrotron Orbital Radiation) is used as an exposure light source. However, the present invention is not limited to this, and any of a laser excitation plasma light source, a betatron light source, a discharged light source, an X-ray laser, and the like is used. Also good.

In the exposure apparatus of the above embodiment, light having a wavelength of 100 nm or less is used as exposure light. However, the present invention is not limited to this, and light having a wavelength of 100 nm or more (ArF excimer laser light (wavelength 193 nm), KrF excimer laser light ( 248 nm), F ₂ laser light (wavelength 157 nm), Ar ₂ laser light (wavelength 126 nm), pulsed laser light such as Kr ₂ laser light (wavelength 146 nm), g-line (wavelength 436 nm) from an ultra-high pressure mercury lamp, It is also possible to use i-line (emission line such as wavelength 365 nm). Further, the projection optical system may be not only a reduction system but also an equal magnification and an enlargement system. Further, the projection optical system is not limited to a reflection type projection optical system composed of only a reflection optical element, but a catadioptric (catadioptric) type projection optical system having a reflection optical element and a refractive optical element, or a refractive optical element. It is also possible to use a refraction type projection optical system having only

  The present invention can also be applied to an exposure apparatus that uses a charged particle beam such as an electron beam or an ion beam.

  In the above embodiment, a light transmissive mask (reticle) in which a predetermined light shielding pattern (or phase pattern / dimming pattern) is formed on a light transmissive substrate is used. Instead of this reticle, for example, As disclosed in US Pat. No. 6,778,257, an electronic mask (or a variable shaping mask, which forms a transmission pattern or a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed, For example, a non-light emitting image display element (including DMD (Digital Micro-mirror Device) which is a kind of spatial light modulator) may be used. In the case of using such a variable shaping mask, in consideration of the detection result of the alignment mark described above, at least one of the plurality of partitioned areas on the wafer that is exposed after the shot area that was exposed when the alignment mark was detected. The relative position control between the wafer and the pattern image may be performed by changing a transmission pattern or a reflection pattern to be formed based on electronic data at the time of exposure of two different shot areas.

  The pattern transfer characteristics of a semiconductor device are adjusted by a step of designing the function / performance of the device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and the adjustment method described above. The exposure apparatus according to the embodiment is manufactured through a lithography step for transferring a pattern formed on a mask onto a photosensitive object, a device assembly step (including a dicing process, a bonding process, and a packaging process), an inspection step, and the like. In this case, since the exposure apparatus of the above embodiment in which the pattern transfer characteristics are adjusted in the lithography step is used, it is possible to improve the productivity of a highly integrated device.

  As described above, the moving body device and fine moving body of the present invention are suitable for use in an exposure apparatus. The exposure apparatus of the present invention is suitable for exposing an object and forming a pattern on the object.

It is the schematic which shows the exposure apparatus which concerns on one Embodiment. It is a top view which shows the wafer stage apparatus of FIG. FIG. 3A is a longitudinal sectional view of wafer stage WST1, and FIG. 3B is a diagram showing a state in which FIG. 3A is disassembled. It is a figure for demonstrating the structure and effect | action of a planar motor. It is a schematic diagram which shows the state which looked at base BS from the + X direction. 6A is a perspective view showing a mover constituting the fine movement mechanism, and FIG. 6B is a perspective view showing a stator constituting the fine movement mechanism. FIG. 7A to FIG. 7C are diagrams for explaining a method of driving the fine movement stage by the fine movement mechanism. It is a longitudinal cross-sectional view of a self-weight cancellation mechanism. It is a figure for demonstrating the internal structure of a receiving / radiating arm. It is a figure for demonstrating the internal structure of a power transmission / waste heat frame. It is a figure which shows the head provided on the wafer stage, and the scale provided in the power transmission and waste heat frame. FIGS. 12A and 12B are views (No. 1) for explaining the parallel processing operation in the exposure apparatus. 13A and 13B are views (No. 2) for explaining the parallel processing operation in the exposure apparatus.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Exposure apparatus, 22A1-22A3, 22B1-22B3 ... Self-weight cancellation mechanism, 30 ... Magnet unit (a part of plane motor), 52A-52D ... Magnet unit (a part of drive mechanism), 56A-56D ... Armature coil (Part of the drive mechanism), 92A ... table (part of the fine movement body), 92B ... plate member (part of the fine movement body), 92C ... suspension support member (part of the fine movement body), 100 ... wafer stage device (moving body device), 130 ... armature unit (part of planar motor), W1, W2 ... wafer (object), WFS1, WRS2 ... fine movement stage (fine movement body), WRS1, WRS2 ... coarse movement stage (Moving body).

Claims (15)

With moving objects;
A fine moving body supported in a non-contact state with respect to the moving body;
A drive mechanism comprising: four armature coils provided on the moving body; and a magnet unit provided on the fine moving body and generating a driving force in cooperation with the four armature coils. Body equipment. The magnet unit includes at least a pair of magnets facing each other through any of the four armature coils,
The mobile device according to claim 1, wherein the opposing portions of the paired magnets have opposite polarities.   The drive mechanism selectively supplies current to the four coils, thereby causing the fine moving body to act on at least one of a translational driving force in a two-dimensional plane and a rotational driving force in the two-dimensional plane. The mobile device according to claim 1 or 2, characterized by the above-mentioned.   The mobile device according to claim 1, further comprising a self-weight canceling mechanism that is provided on the mobile body and supports the self-weight of the fine moving body.   The mobile device according to claim 4, wherein the fine moving body and the dead weight canceling mechanism are in a non-contact state.   5. The self-weight canceling mechanism applies a force that moves in a direction perpendicular to the two-dimensional surface and a force that moves in a direction inclined to the two-dimensional surface to the fine moving body. Or the mobile body apparatus of 5.   The mobile device according to any one of claims 1 to 6, wherein the fine moving body is arranged above the mobile body in a vertical direction.   The moving body device according to any one of claims 1 to 7, further comprising a planar motor that drives the moving body. A fine moving body supported so as to be capable of being driven minutely with respect to the moving body,
A fine moving body main body supported in a non-contact state with respect to the moving body;
A fine moving body comprising: a magnet unit provided in the fine moving body main body and generating a driving force in cooperation with four armature coils provided in the moving body. The magnet unit includes at least a pair of magnets facing each other through any of the four armature coils,
The fine moving body according to claim 9, wherein the opposing portions of the magnets forming the pair have opposite polarities.   11. The fine moving body according to claim 9, wherein the weight of the fine moving body and the magnet unit are supported by a self-weight canceling mechanism provided in the moving body.   The fine moving body according to claim 11, wherein the fine moving body main body and the self-weight canceling mechanism are in a non-contact state.   The self-weight canceling mechanism applies a force that moves in a direction perpendicular to a two-dimensional plane and a force that moves in a direction inclined to the two-dimensional plane to the fine moving body. The fine moving body described in 1. With moving objects;
A moving body device comprising: the fine moving body according to any one of claims 9 to 13 supported in a non-contact state with respect to the moving body. An exposure apparatus for forming a pattern on an object,
An exposure apparatus comprising the moving body device according to claim 1, wherein the object is placed on the fine moving body.

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