JP2001042822A - Active matrix type display device - Google Patents

Active matrix type display device

Info

Publication number
JP2001042822A
JP2001042822A JP11220291A JP22029199A JP2001042822A JP 2001042822 A JP2001042822 A JP 2001042822A JP 11220291 A JP11220291 A JP 11220291A JP 22029199 A JP22029199 A JP 22029199A JP 2001042822 A JP2001042822 A JP 2001042822A
Authority
JP
Japan
Prior art keywords
light
light emitting
display device
light emission
subfield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11220291A
Other languages
Japanese (ja)
Inventor
Shinichi Ishizuka
真一 石塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP11220291A priority Critical patent/JP2001042822A/en
Publication of JP2001042822A publication Critical patent/JP2001042822A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0243—Details of the generation of driving signals
    • G09G2310/0251—Precharge or discharge of pixel before applying new pixel voltage
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2007—Display of intermediate tones
    • G09G3/2018—Display of intermediate tones by time modulation using two or more time intervals
    • G09G3/2022—Display of intermediate tones by time modulation using two or more time intervals using sub-frames

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a display device, in which no dispersion of luminance gradation exists over the entire surface of a display panel, by providing a means to stop the light emitting of light-emitting elements after a prescribed light emitting period has elapsed for every subfield. SOLUTION: A controller 26 controls a light-emitting control driver 31 to supply control signals to make a switching circuit conductive and to make organic electroluminescence(EL) elements of the pixels having the data indicating light-emitting emit light. Moreover the controller 26 supplies a signal, which instructs stopping of light-emitting of the organic EL elements of the driver 31 when a beforehand determined light emitting interval time elapses for a first subfield. The driver 31 supplies control signals to stop light-emitting of the organic EL elements to all the switching circuits of a first row and the elements comes to be in non-light emitting state. Then, the controller 26 repeats similar operations for the case of a first subfield, and corresponding light emitting is conducted from the first subfield to the eighth subfield.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明はアクティブマトリク
ス型表示装置、特に、有機エレクトロルミネセンス素子
等の発光素子を有するアクティブマトリクス型発光パネ
ルを用いた表示装置に関する。[0001] 1. Field of the Invention [0002] The present invention relates to an active matrix type display device, and more particularly to a display device using an active matrix type light emitting panel having a light emitting element such as an organic electroluminescence element.

【０００２】[0002]

【従来の技術】有機エレクトロルミネセンス素子（以
下、有機ＥＬ素子と称する）は発光素子を流れる電流に
よってその発光輝度を制御することができ、このような
発光素子をマトリクス状に配置して構成される発光パネ
ルを用いたマトリクス型ディスプレイの開発が広く進め
られている。かかる有機ＥＬ素子を用いた発光パネルと
して、有機ＥＬ素子を単にマトリクス状に配置した単純
マトリクス型発光パネルと、マトリクス状に配置した有
機ＥＬ素子の各々にトランジスタからなる駆動素子を加
えたアクティブマトリクス型発光パネルがある。アクテ
ィブマトリクス型発光パネルは単純マトリクス型発光パ
ネルに比べて、低消費電力であり、また画素間のクロス
トークが少ないなどの利点を有し、特に大画面ディスプ
レイや高精細度ディスプレイに適している。2. Description of the Related Art An organic electroluminescent element (hereinafter, referred to as an organic EL element) can control the light emission luminance by a current flowing through a light emitting element, and is constituted by arranging such light emitting elements in a matrix. The development of a matrix type display using a light emitting panel has been widely promoted. As a light emitting panel using such an organic EL element, a simple matrix type light emitting panel in which organic EL elements are simply arranged in a matrix, and an active matrix type in which a driving element including a transistor is added to each of the organic EL elements arranged in a matrix are used. There is a light emitting panel. Active matrix light-emitting panels have advantages such as lower power consumption and less crosstalk between pixels than simple matrix light-emitting panels, and are particularly suitable for large-screen displays and high-definition displays.

【０００３】図１は、従来のアクティブマトリクス型発
光パネルの１つの画素１０に対応する回路構成の１例を
示している。かかる回路構成は、例えば、特開平８−２
４１０５７号公報に開示されている。図１において、Ｆ
ＥＴ（Field Effect Transistor)１１（アドレス選択用
トランジスタ）のゲートＧは、アドレス信号が供給され
るアドレス走査電極線（アドレスライン）に接続され、
ＦＥＴ１１のソースＳはデータ信号が供給されるデータ
電極線（データライン）に接続されている。ＦＥＴ１１
のドレインＤはＦＥＴ１２（駆動用トランジスタ）のゲ
ートＧに接続され、キャパシタ１３を通じて接地されて
いる。ＦＥＴ１２のソースＳは接地され、ドレインＤは
有機ＥＬ素子１５の陰極に接続され、有機ＥＬ素子１５
の陽極を通じて電源に接続されている。この回路の発光
制御動作について述べると、先ず、図１においてＦＥＴ
１１のゲートＧにオン電圧が供給されると、ＦＥＴ１１
はソースＳに供給されるデータの電圧に対応した電流を
ソースＳからドレインＤへ流す。ＦＥＴ１１のゲートＧ
がオフ電圧であるとＦＥＴ１１はいわゆるカットオフと
なり、ＦＥＴ１１のドレインＤはオープン状態となる。
従って、ＦＥＴ１１のゲートＧがオン電圧の期間に、ソ
ースＳの電圧がキャパシタ１３に充電され、その電圧が
ＦＥＴ１２のゲートＧに供給されて、ＦＥＴ１２にはそ
のゲート電圧とソース電圧に基づいた電流が有機ＥＬ素
子１５を通じてドレインＤからソースＳへ流れ、有機Ｅ
Ｌ素子１５を発光せしめる。また、ＦＥＴ１１のゲート
Ｇがオフ電圧になると、ＦＥＴ１１はオープン状態とな
り、ＦＥＴ１２はキャパシタ１３に蓄積された電荷によ
りゲートＧの電圧が保持され、次の走査まで駆動電流を
維持し、有機ＥＬ素子１５の発光も維持される。尚、Ｆ
ＥＴ１２のゲートＧとソースＳの間にはゲート入力容量
が存在するのでキャパシタ１３を設けなくとも上記と同
様な動作が可能である。FIG. 1 shows an example of a circuit configuration corresponding to one pixel 10 of a conventional active matrix light emitting panel. Such a circuit configuration is described in, for example,
It is disclosed in Japanese Patent Publication No. 41057. In FIG. 1, F
The gate G of the ET (Field Effect Transistor) 11 (address selection transistor) is connected to an address scan electrode line (address line) to which an address signal is supplied.
The source S of the FET 11 is connected to a data electrode line (data line) to which a data signal is supplied. FET11
Is connected to the gate G of the FET 12 (driving transistor), and is grounded through the capacitor 13. The source S of the FET 12 is grounded, the drain D is connected to the cathode of the organic EL element 15, and the organic EL element 15
Is connected to a power source through the anode. The light emission control operation of this circuit will be described first.
When the ON voltage is supplied to the gate G of the FET 11, the FET 11
Causes a current corresponding to the voltage of the data supplied to the source S to flow from the source S to the drain D. Gate G of FET11
Is an off voltage, the FET 11 is cut off, and the drain D of the FET 11 is in an open state.
Therefore, while the gate G of the FET 11 is in the ON voltage, the voltage of the source S is charged in the capacitor 13, and the voltage is supplied to the gate G of the FET 12, and the FET 12 receives a current based on the gate voltage and the source voltage. It flows from the drain D to the source S through the organic EL element 15, and the organic E
The L element 15 is caused to emit light. When the gate G of the FET 11 is turned off, the FET 11 is in an open state, and the FET 12 holds the voltage of the gate G by the charge accumulated in the capacitor 13, maintains the drive current until the next scan, and operates the organic EL element 15 Is also maintained. Note that F
Since there is a gate input capacitance between the gate G and the source S of the ET 12, the same operation as described above can be performed without providing the capacitor 13.

【０００４】アクティブマトリクス駆動により発光制御
を行う表示パネルの１画素に対応する回路はこのように
構成され、当該画素の有機ＥＬ素子１５が駆動された場
合に当該画素の発光が維持される。上記したアクティブ
マトリクス型発光パネルの各画素の輝度階調の制御は、
ＦＥＴ１２のゲートＧにかかる電圧を振幅変調すること
によって行なわれていた。すなわち、ＦＥＴ１２のソー
ス−ドレイン電流はゲートＧにかかる電圧によって変化
するので、供給される入力映像信号に応じて、ゲートＧ
に印加する電圧の大きさを調整することにより、有機Ｅ
Ｌ素子１５に流れる駆動電流量を調整することができ
る。従って、有機ＥＬ素子１５の駆動電流量を調整する
ことによって有機ＥＬ素子１５の瞬時輝度を調整してい
た。A circuit corresponding to one pixel of a display panel that performs light emission control by active matrix driving is configured as described above, and when the organic EL element 15 of the pixel is driven, light emission of the pixel is maintained. The control of the brightness gradation of each pixel of the active matrix light emitting panel described above is performed by:
This is performed by amplitude-modulating the voltage applied to the gate G of the FET 12. That is, since the source-drain current of the FET 12 changes according to the voltage applied to the gate G, the gate G depends on the supplied input video signal.
By adjusting the magnitude of the voltage applied to the
The amount of drive current flowing through L element 15 can be adjusted. Therefore, the instantaneous luminance of the organic EL element 15 is adjusted by adjusting the amount of drive current of the organic EL element 15.

【０００５】[0005]

【発明が解決しようとする課題】しかしながら、上述し
たような振幅変調によって輝度階調表示を行う表示装置
においては、駆動ＦＥＴのゲートにかかる電圧値とソー
ス−ドレイン間を流れる電流値の関係、すなわち、駆動
ＦＥＴの電流−電圧特性が非線形であるため、表示パネ
ル面内の駆動ＦＥＴ間の特性ばらつきによって輝度階調
にばらつきが生じ、精度の高い多階調表示が困難である
という問題があった。However, in a display device which performs luminance gradation display by amplitude modulation as described above, the relationship between the voltage value applied to the gate of the drive FET and the current value flowing between the source and the drain, that is, In addition, since the current-voltage characteristics of the driving FETs are non-linear, the luminance gradation varies due to the characteristic variation between the driving FETs on the display panel surface, and it is difficult to perform high-precision multi-gradation display. .

【０００６】本発明はかかる点に鑑みてなされたもので
あり、その目的とするところは、表示パネルの全面に亘
って輝度階調のばらつきのない高精度の多階調表示が可
能なアクティブマトリクス型の表示装置を提供すること
にある。SUMMARY OF THE INVENTION The present invention has been made in view of the foregoing, and it is an object of the present invention to provide an active matrix capable of performing high-precision multi-gradation display without variation in luminance gradation over the entire surface of a display panel. It is an object of the present invention to provide a display device of the type.

【０００７】[0007]

【課題を解決するための手段】本発明による表示装置
は、マトリクス状に配置された発光素子と、データ信号
電流を蓄積して保持する保持回路と、該保持された電圧
に応じて発光素子の各々を駆動する駆動素子と、を含む
アクティブマトリクス型の発光パネルを用いた表示装置
であって、入力映像データの同期タイミングに対応する
単位フレーム期間内に、複数のサブフィールド期間を設
定する設定手段と、上記サブフィールド期間毎に発光パ
ネルの各行を順次走査して、上記複数の入力映像データ
に応じて発光素子を発光せしめる表示制御手段と、サブ
フィールド期間の各々に対し、発光制御手段が発光パネ
ルの全ての行の走査に要する期間であるアドレス期間が
所定発光期間よりも長い場合に、発光素子の各々の発光
期間が所定発光期間に達した時に発光素子の各々の発光
を停止せしめる発光停止手段と、を有することを特徴と
している。A display device according to the present invention comprises a light emitting element arranged in a matrix, a holding circuit for accumulating and holding a data signal current, and a light emitting element in accordance with the held voltage. A display device using an active matrix light emitting panel including a driving element for driving each of the driving elements, wherein a setting means for setting a plurality of subfield periods within a unit frame period corresponding to a synchronization timing of input video data Display control means for sequentially scanning each row of the light-emitting panel for each of the sub-field periods and causing the light-emitting elements to emit light in accordance with the plurality of input video data, and emission control means for each of the sub-field periods. When the address period, which is the period required for scanning all the rows of the panel, is longer than the predetermined light emitting period, each light emitting period of the light emitting element is changed to the predetermined light emitting period. It is characterized by having a light emission stop means allowed to stop the light emission of each light emitting element when it reaches.

【０００８】本発明の他の特徴として、上記発光停止手
段は、発光パネルの各行毎に発光素子の発光を停止せし
める。また、本発明の他の特徴として、上記発光停止手
段は、タイマとタイマの出力に応じて駆動素子の各々の
導通を遮断するスイッチ回路と、を有している。更に、
本発明の他の特徴として、上記スイッチ回路は駆動素子
及び保持回路の間に直列に接続されている。As another feature of the present invention, the light emission stopping means stops light emission of the light emitting element for each row of the light emitting panel. Further, as another feature of the present invention, the light emission stopping means includes a timer and a switch circuit for cutting off conduction of each of the driving elements according to the output of the timer. Furthermore,
As another feature of the present invention, the switch circuit is connected in series between the driving element and the holding circuit.

【０００９】本発明の更なる特徴として、上記スイッチ
回路は保持回路に並列に接続されている。また、本発明
の他の特徴として、上記スイッチ回路は発光素子に直列
に接続されている。[0009] As a further feature of the present invention, the switch circuit is connected in parallel to the holding circuit. Further, as another feature of the present invention, the switch circuit is connected in series to the light emitting element.

【００１０】[0010]

【発明の実施の形態】本発明の実施例を図面を参照しつ
つ詳細に説明する。尚、以下に説明する図において、実
質的に同等な部分には同一の参照符を付している。図２
は、本発明の第１の実施例であるアクティブマトリクス
型発光パネルを用いた有機ＥＬ表示装置２０の構成を概
略的に示している。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described in detail with reference to the drawings. In the drawings described below, substantially equivalent parts are denoted by the same reference numerals. FIG.
1 schematically shows a configuration of an organic EL display device 20 using an active matrix light emitting panel according to a first embodiment of the present invention.

【００１１】図２において、アナログ／デジタル（Ａ／
Ｄ）変換器２１は、アナログ映像信号入力を受けてデジ
タル映像信号データに変換する。変換により得られたデ
ジタル映像信号はＡ／Ｄ変換器２１からフレームメモリ
２４へ供給され１フレーム単位のデジタル映像信号デー
タが一旦フレームメモリ２４に記憶される。一方、有機
ＥＬ表示装置２０内の各部の制御をなす表示制御部（以
下、コントローラと称する）２６は、相異なる発光時間
をパラメータとする複数のサブフィールド（以下では８
個のサブフィールドの場合を例に説明する）によって、
上記フレームメモリ２４に記憶されたデジタル映像信号
データを、列アドレスカウンタ２及び行アドレスカウン
タ２３を用いて制御することにより、複数（ここでは８
個）の階調表示データに変換し、それぞれ発光パネル３
０の画素のアドレスに対応する発光・非発光データと共
に順次マルチプレクサ２５に供給する。In FIG. 2, analog / digital (A /
D) The converter 21 receives an analog video signal and converts it into digital video signal data. The digital video signal obtained by the conversion is supplied from the A / D converter 21 to the frame memory 24, and the digital video signal data of one frame unit is temporarily stored in the frame memory 24. On the other hand, a display control unit (hereinafter, referred to as a controller) 26 that controls each unit in the organic EL display device 20 includes a plurality of subfields (hereinafter, referred to as 8) having different emission times as parameters.
Subfields),
By controlling the digital video signal data stored in the frame memory 24 using the column address counter 2 and the row address counter 23, a plurality (here, 8
Of the light-emitting panels 3).
The data is sequentially supplied to the multiplexer 25 together with the emission / non-emission data corresponding to the address of the 0 pixel.

【００１２】また、コントローラ２６は、マルチプレク
サ２５に供給された発光・非発光データの中から各サブ
フィールドに対応する列データを第１行目から順次画素
の配列順に列ドライバ２８が有するデータラッチ回路に
保持させるように制御する。コントローラ２６は、デー
タラッチ回路によって順次保持された各サブフィールド
毎の列データを、１行単位で発光パネル３０に供給する
と共に、行ドライバ２７によって対応する行が有する画
素列において同時に発光させる。また、コントローラ２
６は計時装置（タイマ）を内部に有し（図示しない）、
発光制御ドライバ３１を制御して、各サブフィールド毎
に各画素の発光期間を制御する。この動作は、１フレー
ムのデータ単位で、第１サブフィールドから第８サブフ
ィールドまでのそれぞれの列データに関して行なわれる
（ここでは８回行なわれる）。発光パネル３０の各画素
は、供給される各サブフィールドの各々に対し、後述す
る所定の発光期間だけ発光制御され、１フレーム分の発
光表示を多階調表示によって行うことができる。Further, the controller 26 includes a data latch circuit having a column driver 28 having column data corresponding to each subfield from the light emitting / non-light emitting data supplied to the multiplexer 25 in order of pixel arrangement in order from the first row. Is controlled to be held. The controller 26 supplies the column data for each subfield sequentially held by the data latch circuit to the light-emitting panel 30 on a row-by-row basis, and causes the row driver 27 to simultaneously emit light in the pixel columns of the corresponding row. Controller 2
6 has a clock device (timer) inside (not shown),
The light emission control driver 31 is controlled to control the light emission period of each pixel for each subfield. This operation is performed for each column data from the first subfield to the eighth subfield in one frame data unit (here, eight times). The light emission of each pixel of the light emitting panel 30 is controlled for each of the supplied subfields for a predetermined light emission period described later, and light emission display for one frame can be performed by multi-tone display.

【００１３】なお、図３に示すように、本実施例におい
ては、上記入力映像信号における１フレーム期間を８個
のサブフィールドに分割し、各サブフィールド期間内に
おける輝度の相対比がそれぞれ１／２，１／４，１／
８，１／１６，１／３２，１／６４，１／２５６（すな
わち、順に第１サブフィールド〜第８サブフィール
ド），となるように設定され、それらのサブフィールド
の選択的組合せにより２５６通りの輝度階調表示（すな
わち、サブフィールド２n階調法に基づいた方法による
表示）をなすことができる。As shown in FIG. 3, in this embodiment, one frame period of the input video signal is divided into eight subfields, and the relative ratio of luminance in each subfield period is 1 / 2,1 / 4,1 /
8, 1/16, 1/32, 1/64, 1/256 (that is, from the first subfield to the eighth subfield in order), and 256 patterns are selected by selectively combining these subfields. (That is, display by a method based on the sub-field 2 n gradation method).

【００１４】本発明における有機ＥＬ表示装置は、この
ように構成され、入力されるアナログ映像信号に対し、
各サブフィールド毎に発光パネルの画面全体のアドレス
走査による発光制御を繰り返すことにより、フレーム単
位の発光表示を多階調表示によって行うことができる。
図４は、本発明の第１の実施例であるアクティブマトリ
クス型発光パネルの１画素に対応する回路構成を示した
ものである。本実施例が図１に示した従来技術の回路構
成と異なるのは、アドレス選択用ＦＥＴ１１のソースＳ
及びキャパシタ１３の接続点と駆動用ＦＥＴ１２のゲー
トＧとの間に、駆動用ＦＥＴ１２の導通を制御して有機
ＥＬ素子１５の発光及び非発光（発光停止）を制御する
スイッチ回路３２が設けられている点である。スイッチ
回路３２は、後述する発光制御ドライバ３１からの発光
制御信号に応じてスイッチングを行う２つのＦＥＴ３
３、３４を有している。スイッチ回路３２において、Ｆ
ＥＴ３３はＦＥＴ１１のソースＳ及びキャパシタ１３の
接続点とＦＥＴ１２のゲートＧとの間に接続され、ＦＥ
Ｔ３４はＦＥＴ１２のゲートＧとグランド（ＧＮＤ）間
に接続されている。従って、ＦＥＴ３３が導通し、ＦＥ
Ｔ３４が非導通となったとき、スイッチ回路３２は有機
ＥＬ素子１５を発光せしめる（ＯＮ）発光制御を行い、
その逆の場合に有機ＥＬ素子１５の発光を停止せしめる
（ＯＦＦ）発光制御を行う。The organic EL display device according to the present invention is configured as described above,
By repeating light emission control by address scanning of the entire screen of the light emitting panel for each subfield, light emission display in frame units can be performed by multi-tone display.
FIG. 4 shows a circuit configuration corresponding to one pixel of the active matrix light emitting panel according to the first embodiment of the present invention. This embodiment is different from the circuit configuration of the prior art shown in FIG.
A switch circuit 32 is provided between the connection point of the capacitor 13 and the gate G of the driving FET 12 to control conduction of the driving FET 12 to control light emission and non-light emission (light emission stop) of the organic EL element 15. It is a point. The switch circuit 32 includes two FETs 3 that perform switching in accordance with a light emission control signal from a light emission control driver 31 described later.
3 and 34. In the switch circuit 32, F
ET33 is connected between the connection point of the source S of FET11 and the capacitor 13 and the gate G of FET12,
T34 is connected between the gate G of the FET 12 and the ground (GND). Therefore, the FET 33 conducts, and the FE
When T34 becomes non-conductive, the switch circuit 32 performs (ON) light emission control for causing the organic EL element 15 to emit light,
In the opposite case, light emission control for stopping light emission of the organic EL element 15 (OFF) is performed.

【００１５】以下に、コントローラ２６が、フレームメ
モリ２４に記憶されたデジタル映像信号データに基づい
て発光パネル３０の発光・非発光を制御して多階調表示
を実現する発光制御動作について、図５及び図６に示す
タイムチャートを参照しつつ詳細に説明する。先ず、コ
ントローラ２６は、デジタル映像信号データがフレーム
メモリ２４に供給されると、１フレーム分のデジタル映
像信号データをフレームメモリ２４に書き込む。次に、
コントローラ２６は、マルチプレクサ２５に対し第１サ
ブフィールド（ＳＦ１）のデータを出力する旨の指令を
出す。次に、コントローラ２６は、行アドレスカウンタ
２３に対して第１行を指定する旨の指令を出すと共に、
列アドレスカウンタ２２に対して第１列を指定する旨の
指令を出す。The light emission control operation in which the controller 26 controls light emission / non-light emission of the light emitting panel 30 based on the digital video signal data stored in the frame memory 24 to realize multi-tone display will be described with reference to FIG. And a time chart shown in FIG. First, when the digital video signal data is supplied to the frame memory 24, the controller 26 writes the digital video signal data for one frame into the frame memory 24. next,
Controller 26 issues a command to multiplexer 25 to output data of the first subfield (SF1). Next, the controller 26 issues a command to the row address counter 23 to designate the first row,
It issues a command to the column address counter 22 to designate the first column.

【００１６】これにより、指定されたアドレス（第１
行、第１列）の１フレーム分のデジタル映像信号データ
が、各サブフィールドに対応する８つの階調表示データ
に変換され、発光パネル３０の画素のアドレスに対応す
る発光・非発光データを含んだデータとして順次マルチ
プレクサ２５に供給される。コントローラ２６は、マル
チプレクサ２５に供給された上記指定されたアドレス
（第１行、第１列）のデータの中から第１サブフィール
ドのデータを列ドライバ２８に出力する。列ドライバ２
８では、列ドライバ２８内に設けられたデータラッチ回
路（図示しない）によってこのデータを保持する。Thus, the designated address (first address)
The digital video signal data for one frame (row, first column) is converted into eight gradation display data corresponding to each subfield, and includes emission / non-emission data corresponding to the address of the pixel of the light emitting panel 30. The data is sequentially supplied to the multiplexer 25 as data. The controller 26 outputs the data of the first subfield from the data of the specified address (first row, first column) supplied to the multiplexer 25 to the column driver 28. Column driver 2
At 8, the data is held by a data latch circuit (not shown) provided in the column driver 28.

【００１７】次に、コントローラ２６は、列アドレスカ
ウンタ２２に対して列を１つ更新する指令を出す。すな
わち、列アドレスカウンタ２２に対して第２列を指定す
る旨の指令を出す。このことにより、アドレス（第１
行、第２列）が指定され、先に述べたアドレス（第１
行、第１列）が指定された場合と同様の動作を繰り返
す。このようにして、コントローラ２６は、第１行の各
列に対し順次、上記した動作を繰り返すことにより、第
１行の全ての列のデータを列ドライバ２８が有するデー
タラッチ回路に保持させる。Next, the controller 26 issues a command to the column address counter 22 to update one column. That is, a command to designate the second column is issued to the column address counter 22. This allows the address (first
Row, second column) is specified and the address (first
(Row, first column) is repeated. In this manner, the controller 26 causes the data latch circuit of the column driver 28 to hold the data of all the columns of the first row by repeating the above-described operation sequentially for each column of the first row.

【００１８】第１行の全ての列データがラッチされた
後、図５に示すように、コントローラ２６は第１行の列
データのそれぞれを、対応する各列の画素に書き込む。
すなわち、各画素に対応するアドレス選択用ＦＥＴ１１
を導通せしめる。これと同時に、コントローラ２６は発
光制御ドライバ３１を制御してスイッチ回路３２を導通
（発光制御ＯＮ）させる制御信号を供給せしめ、発光を
示すデータを有する画素の有機ＥＬ素子を発光せしめ
る。尚、コントローラ２６は、更に、第１サブフィール
ドに対し予め決められた所定の発光期間（ＴL1）が経過
したときに、上記有機ＥＬ素子の発光の停止を指示する
信号を発光制御ドライバ３１に供給する。発光制御ドラ
イバ３１は第１行の全てのスイッチ回路３２に有機ＥＬ
素子の発光を停止せしめる制御信号（発光制御ＯＦＦ）
を供給し、有機ＥＬ素子は非発光となる。After all the column data of the first row is latched, the controller 26 writes each of the column data of the first row to the corresponding pixel of each column, as shown in FIG.
That is, the address selection FET 11 corresponding to each pixel
Is made conductive. At the same time, the controller 26 controls the light emission control driver 31 to supply a control signal for turning on the switch circuit 32 (light emission control ON), thereby causing the organic EL element of the pixel having data indicating light emission to emit light. The controller 26 further sends a signal to the light emission control driver 31 to instruct the organic EL element to stop light emission when a predetermined light emission period (T L1 ) elapses for the first subfield. Supply. The light emission control driver 31 applies an organic EL to all the switch circuits 32 in the first row.
Control signal to stop light emission of device (light emission control OFF)
And the organic EL element does not emit light.

【００１９】コントローラ２６は、第１行の全ての列デ
ータがラッチされた後のステップとして、行アドレスカ
ウンタ２３を第２行に指定する旨の指令を出すと共に、
列アドレスカウンタ２２を第１列に指定する旨の指令を
出す。上記した第１行の場合の動作と同様にして、第２
行の全ての列データのデータラッチを行うように制御を
実行する。第２行の全ての列データのラッチ後、上記し
た第１行の場合と同様にして第２行の各列の画素の発光
制御動作が実行される。The controller 26 issues a command to designate the row address counter 23 to the second row as a step after all the column data of the first row is latched.
An instruction to designate the column address counter 22 as the first column is issued. In the same manner as the operation for the first row described above, the second
Control is performed so as to perform data latch of all column data of the row. After latching all the column data of the second row, the light emission control operation of the pixels of each column of the second row is executed in the same manner as in the case of the first row described above.

【００２０】コントローラ２６は、このような動作を全
ての行（すなわち、第１ライン〜第ｍライン）に亘って
行うことにより、第１サブフィールドのデータに対応さ
せて発光パネル３０の全ての画素の発光制御を行うこと
ができる。次に、コントローラ２６は、マルチプレクサ
２５に対し第２サブフィールドのデータを出力する旨の
指令を発する。以下、コントローラ２６は、先に述べた
第１サブフィールドの場合と同様の動作を繰り返し、第
２サブフィールドのデータに対応した発光がなされる。The controller 26 performs such an operation over all the rows (that is, the first to m-th lines), so that all the pixels of the light emitting panel 30 correspond to the data of the first subfield. Light emission control can be performed. Next, the controller 26 issues a command to the multiplexer 25 to output data of the second subfield. Thereafter, the controller 26 repeats the same operation as in the case of the first subfield described above, and emits light corresponding to the data of the second subfield.

【００２１】このようにして、第１サブフィールドから
第８サブフィールドまでに対応した発光がなされるが、
本発明における特徴として、各サブフィールド毎に所定
の発光期間が経過した後、発光素子の発光を停止せしめ
る手段を有しているので、アドレス期間（ＴA）よりも
短い任意の発光期間をサブフィールドに対し割り当てる
ことが可能である。すなわち、発光停止手段を有しない
場合にアドレス期間よりも短い発光期間をサブフィール
ドに割り当てることができないのは、次のサブフィール
ドのアドレス期間の開始によって画素の発光（又は非発
光）が更新されるまで、発光していた画素の発光を停止
できず、次のサブフィールドは、全ての行の走査に要す
る期間であるアドレス期間が終了するまで開始できない
からである。In this manner, light emission corresponding to the first to eighth subfields is performed.
As a feature of the present invention, since a means for stopping light emission of the light emitting element after a predetermined light emission period elapses for each subfield is provided, an arbitrary light emission period shorter than the address period (T A ) can be set as a sub-field. Can be assigned to fields. That is, when the light emission stop means is not provided, the light emission period shorter than the address period cannot be allocated to the subfield because the light emission (or non-light emission) of the pixel is updated at the start of the address period of the next subfield. Until then, the light emission of the pixel that has been emitting light cannot be stopped, and the next subfield cannot be started until the end of the address period, which is the period required for scanning all the rows.

【００２２】図５は、第ｋサブフィールド（１≦ｋ≦
８）に対し、アドレス期間（ＴA）よりも短い発光期間
で各ラインの発光を制御する場合を示している。コント
ローラ２６による前述したのと同様な制御により、各行
はこのサブフィールドに対して設定された所定の発光期
間（ＴLk）で発光制御される。例えば、１フレームを６
０Ｈｚで表示する場合、１フレームは約１６.７ミリ秒
（ｍｓ）である。ここで、アドレス期間を０．８４ｍｓ
（１フレーム期間の４０％×１／８）、第１サブフィー
ルド（１／２）における発光期間を１フレーム期間の１
／２以下の値、例えば５ｍｓとそれぞれ設定する場合を
例に説明する。このとき、第２サブフィールド以降のサ
ブフィールドにおける発光期間はそれぞれ第１サブフィ
ールドの発光期間の１／２1，１／２2，１／２3，・・
・，１／２7である２．５ｍｓ，１．２５ｍｓ，０．６
２５ｍｓ，・・・，０．０３９ｍｓとなる。従って、こ
の場合、第４サブフィールド以降のサブフィールド（第
４〜第８サブフィールド）における発光期間はアドレス
期間（ＴA＝０．８４ｍｓ）よりも短いが、各サブフィ
ールドに対し所望の発光期間を有するように制御がなさ
れる。FIG. 5 shows the k-th subfield (1 ≦ k ≦
8) shows a case in which light emission of each line is controlled in a light emission period shorter than the address period (T A ). Under the same control as described above by the controller 26, each row is controlled to emit light in a predetermined light emission period (T Lk ) set for this subfield. For example, one frame is 6
When displaying at 0 Hz, one frame is about 16.7 milliseconds (ms). Here, the address period is set to 0.84 ms.
(40% × 1/8 of one frame period), the light emission period in the first subfield (１ ／) is set to 1
An example will be described in which each value is set to be equal to or less than / 2, for example, 5 ms. At this time, the light emission periods in the subfields after the second subfield are respectively 1/2 1 , 1/2 2 , 1/2 3 ,... Of the light emission period of the first subfield.
.. 2.5ms, 1.25ms, 0.6 which is 1/2 7
25 ms,..., 0.039 ms. Therefore, in this case, the light emission period in the subfields after the fourth subfield (the fourth to eighth subfields) is shorter than the address period (T A = 0.84 ms), but the desired light emission period for each subfield is set. Is controlled to have

【００２３】上記したようにして、第１サブフィールド
から第８サブフィールドまでの表示制御が終了した時点
で１フレームの表示が完了する。その後、コントローラ
２６は、フレームメモリ２４に記憶されるデータを次の
フレームに対応するデータに書き替えて、次のフレーム
の表示制御を行う。従って、本発明によれば、上述した
発光停止制御により、各サブフィールドに対しアドレス
期間よりも短い任意の発光期間で発光を制御できるの
で、広範な階調表示が可能である。As described above, the display of one frame is completed when the display control from the first subfield to the eighth subfield is completed. Thereafter, the controller 26 rewrites the data stored in the frame memory 24 to data corresponding to the next frame, and controls the display of the next frame. Therefore, according to the present invention, light emission can be controlled in any light emission period shorter than the address period for each subfield by the above-described light emission stop control, so that a wide range of gradation display is possible.

【００２４】図７は、本発明の第２の実施例であるアク
ティブマトリクス型発光パネルの１画素に対応する回路
構成を示したものである。本実施例が第１の実施例と異
なるのは、スイッチ回路３２がキャパシタ１３に並列に
接続されたＦＥＴ３５を有している点である。すなわ
ち、ＦＥＴ３５のドレインＤはＦＥＴ１１のソースＳ及
びキャパシタ１３の接続点に接続され、ソースＳはグラ
ンドに接地されている。従って、ゲートＧに供給される
制御信号に応じてＦＥＴ３５が導通したときに有機ＥＬ
素子１５の発光は停止される。FIG. 7 shows a circuit configuration corresponding to one pixel of an active matrix type light emitting panel according to a second embodiment of the present invention. This embodiment differs from the first embodiment in that the switch circuit 32 has an FET 35 connected in parallel to the capacitor 13. That is, the drain D of the FET 35 is connected to the connection point between the source S of the FET 11 and the capacitor 13, and the source S is grounded. Therefore, when the FET 35 is turned on in response to the control signal supplied to the gate G, the organic EL
Light emission of the element 15 is stopped.

【００２５】図８は、本発明の第３の実施例である発光
パネルの１画素に対応する回路構成を示したものであ
る。本実施例が前述の実施例と異なるのは、スイッチ回
路３２がキャパシタ１３とＦＥＴ１２のゲートＧとの間
に直列に接続されたＦＥＴ３６を有している点である。
すなわち、ＦＥＴ３６のドレインＤはＦＥＴ１１のソー
スＳ及びキャパシタ１３の接続点に接続され、ソースＳ
はＦＥＴ１２のゲートＧに接続されている。従って、ゲ
ートＧに供給される制御信号に応じてＦＥＴ３６が非導
通となったときに有機ＥＬ素子１５の発光は停止され
る。FIG. 8 shows a circuit configuration corresponding to one pixel of a light emitting panel according to a third embodiment of the present invention. This embodiment is different from the above-described embodiment in that the switch circuit 32 has an FET 36 connected in series between the capacitor 13 and the gate G of the FET 12.
That is, the drain D of the FET 36 is connected to the connection point between the source S of the FET 11 and the capacitor 13, and the source S
Is connected to the gate G of the FET 12. Therefore, when the FET 36 is turned off in response to the control signal supplied to the gate G, the light emission of the organic EL element 15 is stopped.

【００２６】図９ないし１１は、本発明の他の実施例で
ある発光パネルの１画素に対応する回路構成をそれぞれ
示したものである。各実施例が前述の実施例と異なるの
は、スイッチ回路３２が有機ＥＬ素子１５と直列に接続
されたＦＥＴ３７を有している点である。すなわち、Ｆ
ＥＴ３７のゲートＧに供給される制御信号に応じてＦＥ
Ｔ３７が非導通となったときに有機ＥＬ素子１５の発光
は停止される。FIGS. 9 to 11 show a circuit configuration corresponding to one pixel of a light emitting panel according to another embodiment of the present invention. Each embodiment differs from the above-described embodiments in that the switch circuit 32 includes an FET 37 connected in series with the organic EL element 15. That is, F
FE in response to a control signal supplied to the gate G of the ET 37
When T37 becomes nonconductive, light emission of the organic EL element 15 is stopped.

【００２７】上記したように、本発明によれば、上述し
た発光停止制御により、各サブフィールドに対しアドレ
ス期間よりも短い任意の発光期間で発光を制御できるの
で、広範な階調表示が実現できる。尚、上記した実施例
において示した各数値は例であって適宜変更してもよ
い。また、各種のスイッチング回路等は、適宜組み合わ
せて用いることができる。As described above, according to the present invention, light emission can be controlled in an arbitrary light emission period shorter than the address period for each subfield by the above-described light emission stop control, so that a wide range of gradation display can be realized. . Each numerical value shown in the above-described embodiment is an example, and may be changed as appropriate. Various switching circuits and the like can be used in appropriate combination.

【００２８】[0028]

【発明の効果】上記したことから明らかなように、本発
明によれば、各サブフィールドにおける発光期間を任意
に制御できるので、表示パネルの全面に亘って輝度階調
のばらつきのない高精度の多階調表示が可能なアクティ
ブマトリクス型の表示装置を実現できる。As is apparent from the above description, according to the present invention, the light emission period in each subfield can be arbitrarily controlled, so that a high-precision and uniform luminance gradation can be obtained over the entire display panel. An active matrix display device capable of multi-tone display can be realized.

【図面の簡単な説明】[Brief description of the drawings]

【図１】従来のアクティブマトリクス型発光パネルの１
つの画素に対応する回路構成の１例を概略的に示す図で
ある。FIG. 1 shows a conventional active matrix light emitting panel 1
FIG. 3 is a diagram schematically illustrating an example of a circuit configuration corresponding to one pixel.

【図２】本発明の実施例であるアクティブマトリクス型
発光パネルを用いた有機ＥＬ表示装置の構成を概略的に
示す図である。FIG. 2 is a diagram schematically showing a configuration of an organic EL display device using an active matrix light emitting panel according to an embodiment of the present invention.

【図３】デジタル映像信号の１フレーム期間、サブフィ
ールド期間、及びアドレス期間を示す図である。FIG. 3 is a diagram illustrating one frame period, a subfield period, and an address period of a digital video signal.

【図４】本発明の第１の実施例であるアクティブマトリ
クス型発光パネルの１画素に対応する回路構成を示す図
である。FIG. 4 is a diagram showing a circuit configuration corresponding to one pixel of the active matrix light emitting panel according to the first embodiment of the present invention.

【図５】コントローラがサブフィールド毎に実行する発
光制御のタイミングを示すタイムチャートである。FIG. 5 is a time chart showing the timing of light emission control executed by the controller for each subfield.

【図６】コントローラが、アドレス期間よりも短い発光
期間で発光を制御する制御タイミングを示すタイムチャ
ートである。FIG. 6 is a time chart showing a control timing at which a controller controls light emission in a light emission period shorter than an address period.

【図７】本発明の第２の実施例であるアクティブマトリ
クス型発光パネルの１画素に対応する回路構成を示す図
である。FIG. 7 is a diagram illustrating a circuit configuration corresponding to one pixel of an active matrix light emitting panel according to a second embodiment of the present invention.

【図８】本発明の第３の実施例である発光パネルの１画
素に対応する回路構成を示す図である。FIG. 8 is a diagram showing a circuit configuration corresponding to one pixel of a light emitting panel according to a third embodiment of the present invention.

【図９】本発明の他の実施例である発光パネルの１画素
に対応する回路構成を示す図である。FIG. 9 is a diagram showing a circuit configuration corresponding to one pixel of a light emitting panel according to another embodiment of the present invention.

【図１０】本発明の他の実施例である発光パネルの１画
素に対応する回路構成を示す図である。FIG. 10 is a diagram showing a circuit configuration corresponding to one pixel of a light emitting panel according to another embodiment of the present invention.

【図１１】本発明の他の実施例である発光パネルの１画
素に対応する回路構成を示す図である。FIG. 11 is a diagram illustrating a circuit configuration corresponding to one pixel of a light emitting panel according to another embodiment of the present invention.

【主要部分の符号の説明】[Explanation of Signs of Main Parts]

１０ 画素 １１ アドレス選択用ＦＥＴ １２ 駆動用ＦＥＴ １３ キャパシタ １５ 発光素子 ２０ 表示装置 ２１ Ａ／Ｄ変換器 ２２ 列アドレスカウンタ ２３ 行アドレスカウンタ ２４ フレームメモリ ２５ マルチプレクサ ２６ コントローラ ２７ 行ドライバ ２８ 列ドライバ ３０ 発光パネル ３１ 発光制御ドライバ ３２ スイッチ回路 ３３，３４，３５，３６ ＦＥＴ Reference Signs List 10 pixel 11 address selection FET 12 drive FET 13 capacitor 15 light emitting element 20 display device 21 A / D converter 22 column address counter 23 row address counter 24 frame memory 25 multiplexer 26 controller 27 row driver 28 column driver 30 light emitting panel 31 Light emission control driver 32 Switch circuit 33, 34, 35, 36 FET

Claims (8)

【特許請求の範囲】[Claims] 【請求項１】 マトリクス状に配置された発光素子と、
データ信号電流を蓄積して保持する保持回路と、該保持
された電圧に応じて前記発光素子の各々を駆動する駆動
素子と、を含むアクティブマトリクス型の発光パネルを
用いた表示装置であって、 入力映像データの同期タイミングに対応する単位フレー
ム期間内に、複数のサブフィールド期間を設定する設定
手段と、 前記サブフィールド期間毎に前記発光パネルの各行を順
次走査して、前記入力映像データに応じて前記発光素子
を発光せしめる表示制御手段と、 前記複数のサブフィールド期間の各々に対し、前記発光
素子の各々の発光期間が所定発光期間に達した時に前記
発光素子の各々の発光を停止せしめる発光停止手段と、
を有することを特徴とする表示装置。A light-emitting element arranged in a matrix;
A display device using an active-matrix light-emitting panel including a holding circuit that stores and holds a data signal current, and a driving element that drives each of the light-emitting elements according to the held voltage, Setting means for setting a plurality of subfield periods within a unit frame period corresponding to the synchronization timing of the input video data; and sequentially scanning each row of the light emitting panel for each of the subfield periods, according to the input video data. Display control means for causing the light emitting element to emit light, and for each of the plurality of subfield periods, light emission for stopping light emission of each of the light emitting elements when each light emitting period of the light emitting element reaches a predetermined light emitting period. Means for stopping;
A display device comprising: 【請求項２】 前記発光停止手段は、前記発光パネルの
各行毎に前記発光素子の発光を停止せしめることを特徴
とする請求項１に記載の表示装置。2. The display device according to claim 1, wherein the light emission stopping means stops light emission of the light emitting element for each row of the light emitting panel. 【請求項３】 前記発光停止手段は、タイマと、前記タ
イマの出力に応じて前記駆動素子の各々の導通を遮断す
るスイッチ回路と、を有することを特徴とする請求項１
又は２に記載の表示装置。3. The light emission stopping means includes a timer, and a switch circuit for interrupting conduction of each of the driving elements in accordance with an output of the timer.
Or the display device according to 2. 【請求項４】 前記スイッチ回路は、前記駆動素子及び
前記保持回路の間に直列に接続されていることを特徴と
する請求項３に記載の表示装置。4. The display device according to claim 3, wherein the switch circuit is connected in series between the driving element and the holding circuit. 【請求項５】 前記スイッチ回路は、前記保持回路に並
列に接続されていることを特徴とする請求項３に記載の
表示装置。5. The display device according to claim 3, wherein the switch circuit is connected to the holding circuit in parallel. 【請求項６】 前記スイッチ回路は、前記駆動素子及び
前記保持回路の間に直列に接続された第１のスイッチ素
子及び前記駆動素子に並列に接続された第２のスイッチ
素子を少なくとも有することを特徴とする請求項３に記
載の表示装置。6. The switch circuit includes at least a first switch element connected in series between the drive element and the holding circuit, and a second switch element connected in parallel to the drive element. The display device according to claim 3, wherein: 【請求項７】 前記スイッチ回路は、前記発光素子に直
列に接続されていることを特徴とする請求項３に記載の
表示装置。7. The display device according to claim 3, wherein the switch circuit is connected to the light emitting element in series. 【請求項８】 前記所定発光期間は、サブフィールド２
n階調法に基づいて定められることを特徴とする請求項
１ないし７に記載の表示装置。8. The method according to claim 1, wherein the predetermined light emission period is a subfield 2
The display device according to claim 1, wherein the display device is determined based on an n gradation method.
JP11220291A 1999-08-03 1999-08-03 Active matrix type display device Pending JP2001042822A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11220291A JP2001042822A (en) 1999-08-03 1999-08-03 Active matrix type display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11220291A JP2001042822A (en) 1999-08-03 1999-08-03 Active matrix type display device

Publications (1)

Publication Number Publication Date
JP2001042822A true JP2001042822A (en) 2001-02-16

Family

ID=16748875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11220291A Pending JP2001042822A (en) 1999-08-03 1999-08-03 Active matrix type display device

Country Status (1)

Country Link
JP (1) JP2001042822A (en)

Cited By (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001242827A (en) * 1999-12-24 2001-09-07 Semiconductor Energy Lab Co Ltd Electronic device
JP2001343911A (en) * 2000-03-27 2001-12-14 Semiconductor Energy Lab Co Ltd Electronic device
JP2001343933A (en) * 1999-11-29 2001-12-14 Semiconductor Energy Lab Co Ltd Light emission device
JP2002014653A (en) * 2000-04-26 2002-01-18 Semiconductor Energy Lab Co Ltd Electronic device and its driving method
JP2002023697A (en) * 2000-04-27 2002-01-23 Semiconductor Energy Lab Co Ltd Light emitting device
JP2002149112A (en) * 1999-11-30 2002-05-24 Semiconductor Energy Lab Co Ltd Electronic device
JP2002333862A (en) * 2001-02-21 2002-11-22 Semiconductor Energy Lab Co Ltd Light emission device and electronic equipment
JP2002358031A (en) * 2001-06-01 2002-12-13 Semiconductor Energy Lab Co Ltd Light emitting device and its driving method
JP2003015605A (en) * 2001-07-03 2003-01-17 Sony Corp Active matrix type display device, active matrix type organic electro-luiminescence display device, and driving method therefor
JP2003058107A (en) * 2001-08-10 2003-02-28 Semiconductor Energy Lab Co Ltd Light emission device and its driving method
WO2003019517A1 (en) * 2001-08-23 2003-03-06 Seiko Epson Corporation Electronic device drive method, electronic device, semiconductor integrated circuit, and electronic apparatus
WO2003027997A1 (en) * 2001-09-21 2003-04-03 Semiconductor Energy Laboratory Co., Ltd. Display apparatus and its driving method
JP2003108073A (en) * 2001-09-28 2003-04-11 Toshiba Corp Luminous display device
WO2003038794A1 (en) * 2001-10-30 2003-05-08 Semiconductor Energy Laboratory Co., Ltd. Signal line drive circuit, light emitting device, and its drive method
WO2003038795A1 (en) * 2001-10-30 2003-05-08 Semiconductor Energy Laboratory Co., Ltd. Signal line drive circuit, light emitting device, and its drive method
WO2003038793A1 (en) * 2001-10-30 2003-05-08 Semiconductor Energy Laboratory Co., Ltd. Signal line drive circuit, light emitting device, and its drive method
US6611108B2 (en) 2000-04-26 2003-08-26 Semiconductor Energy Laboratory Co., Ltd. Electronic device and driving method thereof
WO2003091978A1 (en) * 2002-04-26 2003-11-06 Toshiba Matsushita Display Technology Co., Ltd. El display panel driving method
WO2004013834A1 (en) * 2002-08-02 2004-02-12 Nec Corporation Current drive circuit and image display device
JP2004054238A (en) * 2002-05-31 2004-02-19 Seiko Epson Corp Electronic circuit, optoelectronic device, driving method of the device and electronic equipment
JP2004054239A (en) * 2002-05-31 2004-02-19 Seiko Epson Corp Electronic circuit, electro-optic device, method of driving the device and electronic equipment
JP2004118196A (en) * 2002-09-25 2004-04-15 Samsung Electronics Co Ltd Organic electroluminescence driving element and organic electroluminescence display panel having same
US6730966B2 (en) 1999-11-30 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. EL display using a semiconductor thin film transistor
JP2004138773A (en) * 2002-10-17 2004-05-13 Tohoku Pioneer Corp Active type light emission display device
WO2004057561A1 (en) * 2002-12-19 2004-07-08 Semiconductor Energy Laboratory Co., Ltd. Driving method for light emitting device, and electronic equipment
US6781742B2 (en) 2000-07-11 2004-08-24 Semiconductor Energy Laboratory Co., Ltd. Digital micromirror device and method of driving digital micromirror device
JP2004341312A (en) * 2003-05-16 2004-12-02 Semiconductor Energy Lab Co Ltd Display device and its driving method
JP2004341314A (en) * 2003-05-16 2004-12-02 Semiconductor Energy Lab Co Ltd Display device and its driving method
US6847341B2 (en) 2000-04-19 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method of driving the same
US6903731B2 (en) 2000-04-18 2005-06-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2005173418A (en) * 2003-12-15 2005-06-30 Tohoku Pioneer Corp Driving device of light emitting display panel
JP2005234486A (en) * 2004-02-23 2005-09-02 Tohoku Pioneer Corp Device and method for driving light self-emissive display panel
KR100512927B1 (en) * 2001-05-15 2005-09-07 샤프 가부시키가이샤 Display apparatus and display method
JP2005301174A (en) * 2004-04-16 2005-10-27 Sanyo Electric Co Ltd Display device
US6963336B2 (en) 2001-10-31 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
SG118137A1 (en) * 2001-05-25 2006-01-27 Sony Corp Active matrix type display apparatus active matrixtype organic electroluminescence display apparatu s and driving methods thereof
US6995520B2 (en) 2000-04-27 2006-02-07 Semiconductor Energy Laboratory Co., Ltd. Active matrix light-emitting device and a driving method thereof
US7030847B2 (en) 2000-11-07 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
US7053890B2 (en) 2000-06-22 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US7061451B2 (en) 2001-02-21 2006-06-13 Semiconductor Energy Laboratory Co., Ltd, Light emitting device and electronic device
JP2006284712A (en) * 2005-03-31 2006-10-19 Tohoku Pioneer Corp Driving method and driving device of light emitting display panel
US7170479B2 (en) 2002-05-17 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US7170478B2 (en) 2002-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of driving light-emitting device
US7173586B2 (en) 2003-03-26 2007-02-06 Semiconductor Energy Laboratory Co., Ltd. Element substrate and a light emitting device
US7184034B2 (en) 2002-05-17 2007-02-27 Semiconductor Energy Laboratory Co., Ltd. Display device
US7193619B2 (en) 2001-10-31 2007-03-20 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
JP2007183613A (en) * 2005-12-30 2007-07-19 Lg Phillips Lcd Co Ltd Electroluminescence light emitting display and method of driving thereof
KR100748739B1 (en) 2005-01-28 2007-08-13 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 El display apparatus and method of driving the same
JP2008003623A (en) * 2007-08-10 2008-01-10 Hitachi Ltd Display device
CN101147185A (en) * 2005-01-26 2008-03-19 霍尼韦尔国际公司 Active matrix organic light emitting diode display
CN100403381C (en) * 2002-05-17 2008-07-16 株式会社半导体能源研究所 Display apparatus and driving method thereof
JP2008530604A (en) * 2005-02-10 2008-08-07 トムソン ライセンシング Image display device and method for controlling the same
CN100444217C (en) * 2002-05-17 2008-12-17 株式会社半导体能源研究所 Reflection display element, its manufacture and reflection display device
US7474285B2 (en) 2002-05-17 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. Display apparatus and driving method thereof
US7561147B2 (en) 2003-05-07 2009-07-14 Toshiba Matsushita Display Technology Co., Ltd. Current output type of semiconductor circuit, source driver for display drive, display device, and current output method
WO2009107214A1 (en) * 2008-02-28 2009-09-03 パイオニア株式会社 Driving device and driving method of emission display panel
US7719498B2 (en) 2001-02-21 2010-05-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US7733316B2 (en) 2005-01-31 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Display device, driving method thereof and electronic appliance
US7742019B2 (en) 2002-04-26 2010-06-22 Toshiba Matsushita Display Technology Co., Ltd. Drive method of el display apparatus
US7817149B2 (en) 2002-04-26 2010-10-19 Toshiba Matsushita Display Technology Co., Ltd. Semiconductor circuits for driving current-driven display and display
US7843408B2 (en) 2003-03-19 2010-11-30 Semiconductor Energy Laboratory Co., Ltd. Device substrate, light emitting device and driving method of light emitting device
US7888878B2 (en) 2001-07-12 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device using electron source elements and method of driving same
JP2011039540A (en) * 2010-09-24 2011-02-24 Semiconductor Energy Lab Co Ltd Display device
US7928945B2 (en) 2003-05-16 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP2011090323A (en) * 2003-06-30 2011-05-06 Semiconductor Energy Lab Co Ltd Driving method of light emitting device
US7961160B2 (en) 2003-07-31 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device, a driving method of a display device, and a semiconductor integrated circuit incorporated in a display device
JP2011123507A (en) * 2000-03-27 2011-06-23 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
US7982694B2 (en) 2006-03-14 2011-07-19 Casio Computer Co., Ltd. Display apparatus and drive control method
JP2011145690A (en) * 2011-03-01 2011-07-28 Semiconductor Energy Lab Co Ltd Display device and method for driving display device
US8071982B2 (en) 2001-02-26 2011-12-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic equipment
JP2012078845A (en) * 2011-11-15 2012-04-19 Semiconductor Energy Lab Co Ltd Light-emitting device
JP2013101346A (en) * 2012-11-22 2013-05-23 Semiconductor Energy Lab Co Ltd Display device driving method
JP2013238861A (en) * 2001-11-13 2013-11-28 Semiconductor Energy Lab Co Ltd Display device, module and electronic apparatus
US8633872B2 (en) 2005-10-18 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic equipment each having the same
US8659529B2 (en) 2003-01-17 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Current source circuit, a signal line driver circuit and a driving method thereof and a light emitting device
JP2015018258A (en) * 2002-05-17 2015-01-29 株式会社半導体エネルギー研究所 Display device
JPWO2013021622A1 (en) * 2011-08-09 2015-03-05 パナソニック株式会社 Image display device
JPWO2013021621A1 (en) * 2011-08-09 2015-03-05 パナソニック株式会社 Image display device
CN107256691A (en) * 2017-08-10 2017-10-17 深圳市华星光电半导体显示技术有限公司 The numerical digit driving method and system of OLED display
US9806098B2 (en) 2013-12-10 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP2019215557A (en) * 2001-10-24 2019-12-19 株式会社半導体エネルギー研究所 Electronic apparatus
WO2021130585A1 (en) * 2019-12-25 2021-07-01 株式会社半導体エネルギー研究所 Display apparatus and electronic equipment

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10214060A (en) * 1997-01-28 1998-08-11 Casio Comput Co Ltd Electric field light emission display device and its driving method
WO1998048403A1 (en) * 1997-04-23 1998-10-29 Sarnoff Corporation Active matrix light emitting diode pixel structure and method
JPH10312173A (en) * 1997-05-09 1998-11-24 Pioneer Electron Corp Picture display device
JPH10319908A (en) * 1997-04-14 1998-12-04 Sarnoff Corp Display pixel structure for active matrix organic light emitting diode (amoled), and data load/light emitting circuit therefor
JPH10333641A (en) * 1997-05-29 1998-12-18 Casio Comput Co Ltd Display device and its driving method
EP0905673A1 (en) * 1997-09-29 1999-03-31 Sarnoff Corporation Active matrix display system and a method for driving the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10214060A (en) * 1997-01-28 1998-08-11 Casio Comput Co Ltd Electric field light emission display device and its driving method
JPH10319908A (en) * 1997-04-14 1998-12-04 Sarnoff Corp Display pixel structure for active matrix organic light emitting diode (amoled), and data load/light emitting circuit therefor
WO1998048403A1 (en) * 1997-04-23 1998-10-29 Sarnoff Corporation Active matrix light emitting diode pixel structure and method
JPH10312173A (en) * 1997-05-09 1998-11-24 Pioneer Electron Corp Picture display device
JPH10333641A (en) * 1997-05-29 1998-12-18 Casio Comput Co Ltd Display device and its driving method
EP0905673A1 (en) * 1997-09-29 1999-03-31 Sarnoff Corporation Active matrix display system and a method for driving the same

Cited By (188)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100140A (en) * 1999-11-29 2011-05-19 Semiconductor Energy Lab Co Ltd Light emitting device
US7113154B1 (en) 1999-11-29 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Electronic device
JP2001343933A (en) * 1999-11-29 2001-12-14 Semiconductor Energy Lab Co Ltd Light emission device
US8890149B2 (en) 1999-11-30 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Electro-luminescence display device
US6730966B2 (en) 1999-11-30 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. EL display using a semiconductor thin film transistor
JP2002149112A (en) * 1999-11-30 2002-05-24 Semiconductor Energy Lab Co Ltd Electronic device
US6982462B2 (en) 1999-11-30 2006-01-03 Semiconductor Energy Laboratory Co., Ltd. Light emitting display device using multi-gate thin film transistor
US7525119B2 (en) 1999-11-30 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting display device using thin film transistors and electro-luminescence element
JP2001242827A (en) * 1999-12-24 2001-09-07 Semiconductor Energy Lab Co Ltd Electronic device
US6756740B2 (en) 1999-12-24 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Electronic device
JP2001343911A (en) * 2000-03-27 2001-12-14 Semiconductor Energy Lab Co Ltd Electronic device
US8541804B2 (en) 2000-03-27 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP2011123507A (en) * 2000-03-27 2011-06-23 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
US8237186B2 (en) 2000-03-27 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6903731B2 (en) 2000-04-18 2005-06-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7567227B2 (en) 2000-04-19 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method of driving the same
US9443461B2 (en) 2000-04-19 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method of driving the same
US6847341B2 (en) 2000-04-19 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method of driving the same
JP2011154376A (en) * 2000-04-26 2011-08-11 Semiconductor Energy Lab Co Ltd Semiconductor device, display device and electronic equipment
US7557780B2 (en) 2000-04-26 2009-07-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device and driving method thereof
JP2002014653A (en) * 2000-04-26 2002-01-18 Semiconductor Energy Lab Co Ltd Electronic device and its driving method
US7113155B2 (en) 2000-04-26 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Electronic device with a source region and a drain region of a reset transistor and driving method thereof
US6611108B2 (en) 2000-04-26 2003-08-26 Semiconductor Energy Laboratory Co., Ltd. Electronic device and driving method thereof
JP2014041354A (en) * 2000-04-26 2014-03-06 Semiconductor Energy Lab Co Ltd Display device and electronic apparatus
US8514151B2 (en) 2000-04-26 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Electronic device and driving method thereof
US6995520B2 (en) 2000-04-27 2006-02-07 Semiconductor Energy Laboratory Co., Ltd. Active matrix light-emitting device and a driving method thereof
JP2002023697A (en) * 2000-04-27 2002-01-23 Semiconductor Energy Lab Co Ltd Light emitting device
US7053890B2 (en) 2000-06-22 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US6781742B2 (en) 2000-07-11 2004-08-24 Semiconductor Energy Laboratory Co., Ltd. Digital micromirror device and method of driving digital micromirror device
US7110161B2 (en) 2000-07-11 2006-09-19 Semiconductor Energy Laboratory Co., Ltd. Digital micromirror device and method of driving digital micromirror device
US6937384B2 (en) 2000-07-11 2005-08-30 Semiconductor Energy Laboratory Co., Ltd. Digital micromirror device and method of driving digital micromirror device
US7248393B2 (en) 2000-07-11 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Digital micromirror device and method of driving digital micromirror device
US8139000B2 (en) 2000-11-07 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
US7817116B2 (en) 2000-11-07 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
US8711065B2 (en) 2000-11-07 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
US7030847B2 (en) 2000-11-07 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
US8344972B2 (en) 2000-11-07 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
US8120557B2 (en) 2001-02-21 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US9431466B2 (en) 2001-02-21 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US9886895B2 (en) 2001-02-21 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US8780018B2 (en) 2001-02-21 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
JP2002333862A (en) * 2001-02-21 2002-11-22 Semiconductor Energy Lab Co Ltd Light emission device and electronic equipment
US7719498B2 (en) 2001-02-21 2010-05-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US7061451B2 (en) 2001-02-21 2006-06-13 Semiconductor Energy Laboratory Co., Ltd, Light emitting device and electronic device
US7612746B2 (en) 2001-02-21 2009-11-03 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
US9040996B2 (en) 2001-02-21 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US8610117B2 (en) 2001-02-26 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic equipment
US8071982B2 (en) 2001-02-26 2011-12-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic equipment
US8314427B2 (en) 2001-02-26 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic equipment
KR100512927B1 (en) * 2001-05-15 2005-09-07 샤프 가부시키가이샤 Display apparatus and display method
SG118137A1 (en) * 2001-05-25 2006-01-27 Sony Corp Active matrix type display apparatus active matrixtype organic electroluminescence display apparatu s and driving methods thereof
CN100533531C (en) * 2001-05-25 2009-08-26 索尼株式会社 Display apparatus, organic electroluminescence display apparatus and driving methods thereof
US7432889B2 (en) 2001-05-25 2008-10-07 Sony Corporation Active matrix type display apparatus, active matrix type organic electroluminescence display apparatus, and driving methods thereof
JP2002358031A (en) * 2001-06-01 2002-12-13 Semiconductor Energy Lab Co Ltd Light emitting device and its driving method
US6809482B2 (en) 2001-06-01 2004-10-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of driving the same
JP2003015605A (en) * 2001-07-03 2003-01-17 Sony Corp Active matrix type display device, active matrix type organic electro-luiminescence display device, and driving method therefor
US8022633B2 (en) 2001-07-12 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Display device using electron source elements and method of driving same
US7888878B2 (en) 2001-07-12 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device using electron source elements and method of driving same
JP2003058107A (en) * 2001-08-10 2003-02-28 Semiconductor Energy Lab Co Ltd Light emission device and its driving method
WO2003019517A1 (en) * 2001-08-23 2003-03-06 Seiko Epson Corporation Electronic device drive method, electronic device, semiconductor integrated circuit, and electronic apparatus
US7227517B2 (en) 2001-08-23 2007-06-05 Seiko Epson Corporation Electronic device driving method, electronic device, semiconductor integrated circuit, and electronic apparatus
US7920107B2 (en) 2001-08-23 2011-04-05 Seiko Epson Corporation Electronic device driving method, electronic device, semiconductor integrated circuit, and electronic apparatus
US7138967B2 (en) 2001-09-21 2006-11-21 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JPWO2003027997A1 (en) * 2001-09-21 2005-01-13 株式会社半導体エネルギー研究所 Display device and driving method thereof
JP2018087983A (en) * 2001-09-21 2018-06-07 株式会社半導体エネルギー研究所 Display device
KR100924739B1 (en) 2001-09-21 2009-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display apparatus and its driving method
JP2017076143A (en) * 2001-09-21 2017-04-20 株式会社半導体エネルギー研究所 Display device
US8599109B2 (en) 2001-09-21 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
WO2003027997A1 (en) * 2001-09-21 2003-04-03 Semiconductor Energy Laboratory Co., Ltd. Display apparatus and its driving method
US7859520B2 (en) 2001-09-21 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP2003108073A (en) * 2001-09-28 2003-04-11 Toshiba Corp Luminous display device
JP2019215557A (en) * 2001-10-24 2019-12-19 株式会社半導体エネルギー研究所 Electronic apparatus
US10679550B2 (en) 2001-10-24 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2020197722A (en) * 2001-10-24 2020-12-10 株式会社半導体エネルギー研究所 Display device
US8314754B2 (en) 2001-10-30 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Signal line driver circuit, light emitting device and driving method thereof
CN100416635C (en) * 2001-10-30 2008-09-03 株式会社半导体能源研究所 Signal line drive circuit, light emitting device, and its drive method
US7742064B2 (en) 2001-10-30 2010-06-22 Semiconductor Energy Laboratory Co., Ltd Signal line driver circuit, light emitting device and driving method thereof
WO2003038793A1 (en) * 2001-10-30 2003-05-08 Semiconductor Energy Laboratory Co., Ltd. Signal line drive circuit, light emitting device, and its drive method
US8624802B2 (en) 2001-10-30 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Signal line driver circuit and light emitting device and driving method therefor
US7961159B2 (en) 2001-10-30 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Signal line driver circuit, light emitting device and driving method thereof
WO2003038795A1 (en) * 2001-10-30 2003-05-08 Semiconductor Energy Laboratory Co., Ltd. Signal line drive circuit, light emitting device, and its drive method
US7180479B2 (en) 2001-10-30 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Signal line drive circuit and light emitting device and driving method therefor
WO2003038794A1 (en) * 2001-10-30 2003-05-08 Semiconductor Energy Laboratory Co., Ltd. Signal line drive circuit, light emitting device, and its drive method
US7576734B2 (en) 2001-10-30 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit, light emitting device, and method for driving the same
US8325165B2 (en) 2001-10-30 2012-12-04 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit, light emitting device, and method for driving the same
US8164548B2 (en) 2001-10-30 2012-04-24 Semiconductor Energy Laboratory Co., Ltd. Signal line driver circuit and light emitting device and driving method therefor
US7791566B2 (en) 2001-10-31 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
US9076385B2 (en) 2001-10-31 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
US8593377B2 (en) 2001-10-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
US6963336B2 (en) 2001-10-31 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
US7948453B2 (en) 2001-10-31 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
US7193619B2 (en) 2001-10-31 2007-03-20 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
US7583257B2 (en) 2001-10-31 2009-09-01 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
US8294640B2 (en) 2001-10-31 2012-10-23 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
US7940235B2 (en) 2001-10-31 2011-05-10 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
JP2013238861A (en) * 2001-11-13 2013-11-28 Semiconductor Energy Lab Co Ltd Display device, module and electronic apparatus
JP2021060608A (en) * 2001-11-13 2021-04-15 株式会社半導体エネルギー研究所 Display device
US10128280B2 (en) 2001-11-13 2018-11-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method for driving the same
US9825068B2 (en) 2001-11-13 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Display device and method for driving the same
US11037964B2 (en) 2001-11-13 2021-06-15 Semiconductor Energy Laboratory Co., Ltd. Display device and method for driving the same
US8593381B2 (en) 2002-03-26 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method of driving light-emitting device
US8274458B2 (en) 2002-03-26 2012-09-25 Semiconductor Energy Laboratory Co., Ltd. Method of driving light-emitting device
US7170478B2 (en) 2002-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of driving light-emitting device
KR100856967B1 (en) * 2002-04-26 2008-09-04 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 El display device
KR100796397B1 (en) * 2002-04-26 2008-01-21 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 El display device
KR100856969B1 (en) * 2002-04-26 2008-09-04 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 El display device
KR100885323B1 (en) 2002-04-26 2009-02-25 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 El display device and inspecting method thereof
US7924248B2 (en) 2002-04-26 2011-04-12 Toshiba Matsushita Display Technology Co., Ltd. Drive method of EL display apparatus
KR100885324B1 (en) 2002-04-26 2009-02-25 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 El display device and driving method thereof
US7932880B2 (en) 2002-04-26 2011-04-26 Toshiba Matsushita Display Technology Co., Ltd. EL display panel driving method
KR100856968B1 (en) * 2002-04-26 2008-09-04 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 El display device
US7817149B2 (en) 2002-04-26 2010-10-19 Toshiba Matsushita Display Technology Co., Ltd. Semiconductor circuits for driving current-driven display and display
US7777698B2 (en) 2002-04-26 2010-08-17 Toshiba Matsushita Display Technology, Co., Ltd. Drive method of EL display panel
US7742019B2 (en) 2002-04-26 2010-06-22 Toshiba Matsushita Display Technology Co., Ltd. Drive method of el display apparatus
US8063855B2 (en) 2002-04-26 2011-11-22 Toshiba Matsushita Display Technology Co., Ltd. Drive method of EL display panel
WO2003091978A1 (en) * 2002-04-26 2003-11-06 Toshiba Matsushita Display Technology Co., Ltd. El display panel driving method
US10527903B2 (en) 2002-05-17 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Display device
US11422423B2 (en) 2002-05-17 2022-08-23 Semiconductor Energy Laboratory Co., Ltd. Display device
US7864143B2 (en) 2002-05-17 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US9366930B2 (en) 2002-05-17 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device with capacitor elements
CN100403381C (en) * 2002-05-17 2008-07-16 株式会社半导体能源研究所 Display apparatus and driving method thereof
US7184034B2 (en) 2002-05-17 2007-02-27 Semiconductor Energy Laboratory Co., Ltd. Display device
US7852297B2 (en) 2002-05-17 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Display device
US7532209B2 (en) 2002-05-17 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Display apparatus and driving method thereof
US7511687B2 (en) 2002-05-17 2009-03-31 Semiconductor Energy Laboratory Co., Ltd. Display device, electronic apparatus and navigation system
CN100444217C (en) * 2002-05-17 2008-12-17 株式会社半导体能源研究所 Reflection display element, its manufacture and reflection display device
US7170479B2 (en) 2002-05-17 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP2015018258A (en) * 2002-05-17 2015-01-29 株式会社半導体エネルギー研究所 Display device
US10133139B2 (en) 2002-05-17 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US7474285B2 (en) 2002-05-17 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. Display apparatus and driving method thereof
JP2004054239A (en) * 2002-05-31 2004-02-19 Seiko Epson Corp Electronic circuit, electro-optic device, method of driving the device and electronic equipment
JP2004054238A (en) * 2002-05-31 2004-02-19 Seiko Epson Corp Electronic circuit, optoelectronic device, driving method of the device and electronic equipment
WO2004013834A1 (en) * 2002-08-02 2004-02-12 Nec Corporation Current drive circuit and image display device
JP2004118196A (en) * 2002-09-25 2004-04-15 Samsung Electronics Co Ltd Organic electroluminescence driving element and organic electroluminescence display panel having same
JP2004138773A (en) * 2002-10-17 2004-05-13 Tohoku Pioneer Corp Active type light emission display device
WO2004057561A1 (en) * 2002-12-19 2004-07-08 Semiconductor Energy Laboratory Co., Ltd. Driving method for light emitting device, and electronic equipment
JP5137294B2 (en) * 2002-12-19 2013-02-06 株式会社半導体エネルギー研究所 Driving method of light emitting device
US7573445B2 (en) 2002-12-19 2009-08-11 Semiconductor Energy Laboratory Co., Ltd. Driving method of light emitting device and electronic apparatus
JPWO2004057561A1 (en) * 2002-12-19 2006-04-27 株式会社半導体エネルギー研究所 Driving method of light emitting device and electronic apparatus
US9626913B2 (en) 2003-01-17 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Current source circuit, a signal line driver circuit and a driving method thereof and a light emitting device
US8659529B2 (en) 2003-01-17 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Current source circuit, a signal line driver circuit and a driving method thereof and a light emitting device
US8242988B2 (en) 2003-03-19 2012-08-14 Semiconductor Energy Laboratory Co., Ltd. Device substrate, light emitting device and driving method of light emitting device
US7843408B2 (en) 2003-03-19 2010-11-30 Semiconductor Energy Laboratory Co., Ltd. Device substrate, light emitting device and driving method of light emitting device
US8570256B2 (en) 2003-03-19 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Device substrate, light emitting device and driving method of light emitting device
US7173586B2 (en) 2003-03-26 2007-02-06 Semiconductor Energy Laboratory Co., Ltd. Element substrate and a light emitting device
US7714818B2 (en) 2003-03-26 2010-05-11 Semiconductor Energy Laboratory Co., Ltd. Element substrate and a light emitting device
US7561147B2 (en) 2003-05-07 2009-07-14 Toshiba Matsushita Display Technology Co., Ltd. Current output type of semiconductor circuit, source driver for display drive, display device, and current output method
JP4583724B2 (en) * 2003-05-16 2010-11-17 株式会社半導体エネルギー研究所 Display device
US8643591B2 (en) 2003-05-16 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP2004341312A (en) * 2003-05-16 2004-12-02 Semiconductor Energy Lab Co Ltd Display device and its driving method
US7928945B2 (en) 2003-05-16 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP2004341314A (en) * 2003-05-16 2004-12-02 Semiconductor Energy Lab Co Ltd Display device and its driving method
JP4618986B2 (en) * 2003-05-16 2011-01-26 株式会社半導体エネルギー研究所 Display device
US8552933B2 (en) 2003-06-30 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and driving method of the same
JP2011090323A (en) * 2003-06-30 2011-05-06 Semiconductor Energy Lab Co Ltd Driving method of light emitting device
US7961160B2 (en) 2003-07-31 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device, a driving method of a display device, and a semiconductor integrated circuit incorporated in a display device
JP2005173418A (en) * 2003-12-15 2005-06-30 Tohoku Pioneer Corp Driving device of light emitting display panel
JP2005234486A (en) * 2004-02-23 2005-09-02 Tohoku Pioneer Corp Device and method for driving light self-emissive display panel
JP2005301174A (en) * 2004-04-16 2005-10-27 Sanyo Electric Co Ltd Display device
CN104778918B (en) * 2005-01-26 2017-07-21 霍尼韦尔国际公司 Active matrix organic light emitting diode display
CN104778918A (en) * 2005-01-26 2015-07-15 霍尼韦尔国际公司 Active matrix organic light emitting diode display
CN101147185A (en) * 2005-01-26 2008-03-19 霍尼韦尔国际公司 Active matrix organic light emitting diode display
US9489886B2 (en) 2005-01-26 2016-11-08 Honeywell International Inc. Active matrix organic light emitting diode display
JP2008529083A (en) * 2005-01-26 2008-07-31 ハネウェル・インターナショナル・インコーポレーテッド Active matrix organic light-emitting diode display
US10089927B2 (en) 2005-01-26 2018-10-02 Honeywell International Inc. Active matrix organic light emitting diode display
KR100748739B1 (en) 2005-01-28 2007-08-13 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 El display apparatus and method of driving the same
US7733316B2 (en) 2005-01-31 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Display device, driving method thereof and electronic appliance
JP2008530604A (en) * 2005-02-10 2008-08-07 トムソン ライセンシング Image display device and method for controlling the same
JP2006284712A (en) * 2005-03-31 2006-10-19 Tohoku Pioneer Corp Driving method and driving device of light emitting display panel
US8633872B2 (en) 2005-10-18 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic equipment each having the same
JP2007183613A (en) * 2005-12-30 2007-07-19 Lg Phillips Lcd Co Ltd Electroluminescence light emitting display and method of driving thereof
US7982694B2 (en) 2006-03-14 2011-07-19 Casio Computer Co., Ltd. Display apparatus and drive control method
JP2008003623A (en) * 2007-08-10 2008-01-10 Hitachi Ltd Display device
WO2009107214A1 (en) * 2008-02-28 2009-09-03 パイオニア株式会社 Driving device and driving method of emission display panel
JP2011039540A (en) * 2010-09-24 2011-02-24 Semiconductor Energy Lab Co Ltd Display device
JP2011145690A (en) * 2011-03-01 2011-07-28 Semiconductor Energy Lab Co Ltd Display device and method for driving display device
JPWO2013021622A1 (en) * 2011-08-09 2015-03-05 パナソニック株式会社 Image display device
JPWO2013021621A1 (en) * 2011-08-09 2015-03-05 パナソニック株式会社 Image display device
US9324258B2 (en) 2011-08-09 2016-04-26 Joled Inc Display apparatus
US9286830B2 (en) 2011-08-09 2016-03-15 Joled Inc Display apparatus
JP2012078845A (en) * 2011-11-15 2012-04-19 Semiconductor Energy Lab Co Ltd Light-emitting device
JP2013101346A (en) * 2012-11-22 2013-05-23 Semiconductor Energy Lab Co Ltd Display device driving method
US9985052B2 (en) 2013-12-10 2018-05-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9806098B2 (en) 2013-12-10 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US10706781B2 (en) 2017-08-10 2020-07-07 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Digital driving method and system of OLED display device
CN107256691B (en) * 2017-08-10 2019-09-27 深圳市华星光电半导体显示技术有限公司 The numerical digit driving method and system of OLED display
CN107256691A (en) * 2017-08-10 2017-10-17 深圳市华星光电半导体显示技术有限公司 The numerical digit driving method and system of OLED display
WO2021130585A1 (en) * 2019-12-25 2021-07-01 株式会社半導体エネルギー研究所 Display apparatus and electronic equipment

Similar Documents

Publication Publication Date Title
JP2001042822A (en) Active matrix type display device
JP3353731B2 (en) Organic electroluminescence element driving device
JP3594856B2 (en) Active matrix display device
US7397447B2 (en) Circuit in light emitting display
KR100619609B1 (en) Image display apparatus
CN101884061B (en) LED display with control circuit
EP1094438A1 (en) Active matrix display apparatus and driving method therefor
JPH10312173A (en) Picture display device
US20060103322A1 (en) Apparatus and method for driving organic light-emitting diode
JP2000347622A (en) Display device and its driving method
WO2007074615A1 (en) Display device for video signal and display control method for video signal
JP2012022330A (en) Electro-luminescence display device and driving method thereof
US20050007361A1 (en) Current-driven active matrix display panel for improved pixel programming
JPWO2007010956A1 (en) Active matrix display device
KR20040019208A (en) Aging Circuit For Organic Electroluminescence Device And Method Of Driving The same
JP3953383B2 (en) Driving device and driving method of light emitting display panel
JP4504803B2 (en) Electroluminescence display device
JP2002278497A (en) Display panel and driving method therefor
US7812793B2 (en) Active matrix organic electroluminescent display device
KR20150107995A (en) Display apparatus, and method for driving the display apparatus
JP2001142427A (en) Matrix type display device and its driving method
KR101674606B1 (en) Organic Light Emitting Display Device and Driving Method Thereof
JP2005165320A (en) Light emitting display device and its driving method
JP2003043999A (en) Display pixel circuit and self-luminous display device
KR100645699B1 (en) Light Emitting Display and Driving Method Thereof

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20031226

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20040128