HK1189427A1 - Semiconductor devices with back surface isolation - Google Patents

Semiconductor devices with back surface isolation

Info

Publication number
HK1189427A1
HK1189427A1 HK14102494.1A HK14102494A HK1189427A1 HK 1189427 A1 HK1189427 A1 HK 1189427A1 HK 14102494 A HK14102494 A HK 14102494A HK 1189427 A1 HK1189427 A1 HK 1189427A1
Authority
HK
Hong Kong
Prior art keywords
back surface
semiconductor devices
surface isolation
isolation
semiconductor
Prior art date
Application number
HK14102494.1A
Other languages
Chinese (zh)
Inventor
亞歷山大．利道
曹建軍
羅伯特．比奇
．斯特賴敦
阿蘭娜．納卡塔
趙廣元
Original Assignee
Efficient Power Conv Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Efficient Power Conv Corp filed Critical Efficient Power Conv Corp
Publication of HK1189427A1 publication Critical patent/HK1189427A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
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    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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HK14102494.1A 2010-12-15 2014-03-12 Semiconductor devices with back surface isolation HK1189427A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42315710P 2010-12-15 2010-12-15
PCT/US2011/064803 WO2012082840A1 (en) 2010-12-15 2011-12-14 Semiconductor devices with back surface isolation

Publications (1)

Publication Number Publication Date
HK1189427A1 true HK1189427A1 (en) 2014-06-06

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HK14102494.1A HK1189427A1 (en) 2010-12-15 2014-03-12 Semiconductor devices with back surface isolation

Country Status (8)

Country Link
US (3) US9607876B2 (en)
JP (1) JP2014504013A (en)
KR (1) KR20130126948A (en)
CN (1) CN103329256B (en)
DE (1) DE112011104408T5 (en)
HK (1) HK1189427A1 (en)
TW (1) TWI572037B (en)
WO (1) WO2012082840A1 (en)

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