FR2486716B1 - Procede de realisation d'un dispositif semi-conducteur - Google Patents

Procede de realisation d'un dispositif semi-conducteur

Info

Publication number
FR2486716B1
FR2486716B1 FR8113549A FR8113549A FR2486716B1 FR 2486716 B1 FR2486716 B1 FR 2486716B1 FR 8113549 A FR8113549 A FR 8113549A FR 8113549 A FR8113549 A FR 8113549A FR 2486716 B1 FR2486716 B1 FR 2486716B1
Authority
FR
France
Prior art keywords
producing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8113549A
Other languages
English (en)
Other versions
FR2486716A1 (fr
Inventor
Josef Alphons Marie Sanders
Franciscus Hubertus Ma Sanders
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2486716A1 publication Critical patent/FR2486716A1/fr
Application granted granted Critical
Publication of FR2486716B1 publication Critical patent/FR2486716B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR8113549A 1980-07-11 1981-07-09 Procede de realisation d'un dispositif semi-conducteur Expired FR2486716B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8004008A NL8004008A (nl) 1980-07-11 1980-07-11 Werkwijze voor het vervaardigen van een halfgeleider- inrichting.

Publications (2)

Publication Number Publication Date
FR2486716A1 FR2486716A1 (fr) 1982-01-15
FR2486716B1 true FR2486716B1 (fr) 1986-01-24

Family

ID=19835611

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8113549A Expired FR2486716B1 (fr) 1980-07-11 1981-07-09 Procede de realisation d'un dispositif semi-conducteur

Country Status (8)

Country Link
US (1) US4374699A (fr)
JP (2) JPS5752136A (fr)
CA (1) CA1165902A (fr)
DE (1) DE3125052A1 (fr)
FR (1) FR2486716B1 (fr)
GB (1) GB2081161B (fr)
IE (1) IE52045B1 (fr)
NL (1) NL8004008A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163826A (ja) * 1983-03-08 1984-09-14 Toshiba Corp ドライエツチング方法
US4501061A (en) * 1983-05-31 1985-02-26 Advanced Micro Devices, Inc. Fluorine plasma oxidation of residual sulfur species
US4431477A (en) * 1983-07-05 1984-02-14 Matheson Gas Products, Inc. Plasma etching with nitrous oxide and fluoro compound gas mixture
US4544416A (en) * 1983-08-26 1985-10-01 Texas Instruments Incorporated Passivation of silicon oxide during photoresist burnoff
ES2048158T3 (es) * 1986-06-26 1994-03-16 American Telephone & Telegraph Procedimiento para fabricar dispositivos de circuito integrado utilizando una estructura de resist multinivel.
US4836887A (en) * 1987-11-23 1989-06-06 International Business Machines Corporation Chlorofluorocarbon additives for enhancing etch rates in fluorinated halocarbon/oxidant plasmas
US4845053A (en) * 1988-01-25 1989-07-04 John Zajac Flame ashing process for stripping photoresist
US4936772A (en) * 1988-01-25 1990-06-26 John Zajac Flame ashing process and apparatus for stripping photoresist
JP2813703B2 (ja) * 1992-07-20 1998-10-22 株式会社クボタ スパイラルベベルギアの製造装置
US7299805B2 (en) 2002-06-07 2007-11-27 Marctec, Llc Scaffold and method for implanting cells
US20050136666A1 (en) * 2003-12-23 2005-06-23 Tokyo Electron Limited Method and apparatus for etching an organic layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3867216A (en) * 1972-05-12 1975-02-18 Adir Jacob Process and material for manufacturing semiconductor devices
JPS5289540A (en) * 1976-01-21 1977-07-27 Mitsubishi Electric Corp Etching gaseous mixture
JPS5915174B2 (ja) * 1976-07-26 1984-04-07 日本電信電話株式会社 フオトマスクの製造方法
JPS6019139B2 (ja) * 1976-07-26 1985-05-14 三菱電機株式会社 エツチング方法およびプラズマエツチング用混合物ガス
JPS53112065A (en) * 1977-03-11 1978-09-30 Toshiba Corp Removing method of high molecular compound
US4260649A (en) * 1979-05-07 1981-04-07 The Perkin-Elmer Corporation Laser induced dissociative chemical gas phase processing of workpieces
NL8004007A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.

Also Published As

Publication number Publication date
JPH02290021A (ja) 1990-11-29
JPS5752136A (en) 1982-03-27
IE811530L (en) 1982-01-11
IE52045B1 (en) 1987-05-27
FR2486716A1 (fr) 1982-01-15
DE3125052A1 (de) 1982-03-18
US4374699A (en) 1983-02-22
GB2081161B (en) 1984-08-08
GB2081161A (en) 1982-02-17
JPH0359575B2 (fr) 1991-09-11
NL8004008A (nl) 1982-02-01
CA1165902A (fr) 1984-04-17
DE3125052C2 (fr) 1990-06-07
JPH0237091B2 (fr) 1990-08-22

Similar Documents

Publication Publication Date Title
FR2483127B1 (fr) Procede de fabrication d'un dispositif semi-conducteur
FR2524709B1 (fr) Dispositif a semi-conducteur et procede pour sa fabrication
FR2526225B1 (fr) Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu
FR2524201B1 (fr) Procede de fabrication d'un dispositif semi-conducteur du type multicouche
FR2466857B1 (fr) Procede de fabrication d'un dispositif par attaque par plasma
FR2494254B1 (fr) Dispositif et procede pour produire de l'ozone
FR2462023B1 (fr) Procede de fabrication d'un dispositif semi-conducteur
FR2493228B1 (fr) Procede et dispositif de commande d'une imprimante
FR2493229B1 (fr) Procede et dispositif de commande d'une imprimante
FR2351501A1 (fr) Procede pour la fabrication d'un dispositif semi-conducteur, et dispositif semi-conducteur fabrique de la sorte
FR2546912B1 (fr) Procede et dispositif d'elaboration d'un monocristal
FR2530833B1 (fr) Procede de realisation d'un masque photographique
FR2486715B1 (fr) Procede de realisation d'un dispositif semi-conducteur
FR2349955A1 (fr) Procede pour la fabrication d'un dispositif semi-conducteur, et dispositif semi-conducteur fabrique de la sorte
FR2486716B1 (fr) Procede de realisation d'un dispositif semi-conducteur
FR2571542B1 (fr) Procede de realisation d'un dispositif semiconducteur incluant l'action de plasma
FR2536867B1 (fr) Procede d'alignement d'un dispositif optoelectronique
FR2570223B1 (fr) Dispositif piezoelectrique et procede de realisation d'un tel dispositif
BE888735A (fr) Dispositif et procede d'indexage pour machine a etiqueter
FR2511706B1 (fr) Procede et dispositif d'electrodeposition
MA19220A1 (fr) Procede et dispositif de refroidissement de secours d'un reacteur nucleaire .
FR2309977A1 (fr) Procede pour la realisation d'un dispositif semi-conducteur
FR2531662B1 (fr) Plaque de construction, dispositif et procede pour sa formation
FR2625036B1 (fr) Procede de realisation d'un reseau de diffraction sur un materiau semi-conducteur, et dispositif opto-electronique comportant un reseau de diffraction realise selon ce procede
BE875673A (fr) Procede et dispositif de refroidissement d'un fil

Legal Events

Date Code Title Description
ST Notification of lapse