JPS53112065A - Removing method of high molecular compound - Google Patents

Removing method of high molecular compound

Info

Publication number
JPS53112065A
JPS53112065A JP2602877A JP2602877A JPS53112065A JP S53112065 A JPS53112065 A JP S53112065A JP 2602877 A JP2602877 A JP 2602877A JP 2602877 A JP2602877 A JP 2602877A JP S53112065 A JPS53112065 A JP S53112065A
Authority
JP
Japan
Prior art keywords
high molecular
molecular compound
removing method
gas containing
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2602877A
Other languages
Japanese (ja)
Other versions
JPS6211493B2 (en
Inventor
Masahiro Shibagaki
Yasuhiro Horiike
Katsuo Sumino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2602877A priority Critical patent/JPS53112065A/en
Publication of JPS53112065A publication Critical patent/JPS53112065A/en
Publication of JPS6211493B2 publication Critical patent/JPS6211493B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To facilitate resist removal in lithography process by performing plasma etching through the use of a mixed gas which is mainly composed of a gas containing oxygen atoms and is then added with a gas containing fluorine atoms.
COPYRIGHT: (C)1978,JPO&Japio
JP2602877A 1977-03-11 1977-03-11 Removing method of high molecular compound Granted JPS53112065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2602877A JPS53112065A (en) 1977-03-11 1977-03-11 Removing method of high molecular compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2602877A JPS53112065A (en) 1977-03-11 1977-03-11 Removing method of high molecular compound

Publications (2)

Publication Number Publication Date
JPS53112065A true JPS53112065A (en) 1978-09-30
JPS6211493B2 JPS6211493B2 (en) 1987-03-12

Family

ID=12182239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2602877A Granted JPS53112065A (en) 1977-03-11 1977-03-11 Removing method of high molecular compound

Country Status (1)

Country Link
JP (1) JPS53112065A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749236A (en) * 1980-07-11 1982-03-23 Philips Nv Method of producing semiconductor device
JPS5752136A (en) * 1980-07-11 1982-03-27 Philips Nv Method of producing semiconductor device
JPS5924846A (en) * 1982-07-26 1984-02-08 エスヴィージー・リトグラフィー・システムズ・インコーポレイテッド Dry development for photoresist
JPS61142744A (en) * 1984-12-17 1986-06-30 Sony Corp Etching gas and etching method using said gas
JPS61214434A (en) * 1985-03-19 1986-09-24 Tokyo Denshi Kagaku Kk Method for removing organic film
JPS61267325A (en) * 1985-05-22 1986-11-26 Tokyo Denshi Kagaku Kk Removal of organic film
JPS62125627A (en) * 1985-11-26 1987-06-06 Tokyo Denshi Kagaku Kk Removing method for organic film
JPS62208636A (en) * 1986-02-14 1987-09-12 Fujitsu Ltd Process of peeling off resist
JPS62281331A (en) * 1986-05-29 1987-12-07 Fujitsu Ltd Etching method
JPS63260032A (en) * 1986-09-19 1988-10-27 Tokyo Ohka Kogyo Co Ltd Removal of organic film
JPH0291936A (en) * 1988-09-29 1990-03-30 Fujitsu Ltd Ashing device and ashing using same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0240280U (en) * 1988-09-13 1990-03-19

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110276A (en) * 1975-03-25 1976-09-29 Tokyo Shibaura Electric Co GASUETSU CHINGUSOCHI

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110276A (en) * 1975-03-25 1976-09-29 Tokyo Shibaura Electric Co GASUETSU CHINGUSOCHI

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0237090B2 (en) * 1980-07-11 1990-08-22 Fuiritsupusu Furuuiranpenfuaburiken Nv
JPS5752136A (en) * 1980-07-11 1982-03-27 Philips Nv Method of producing semiconductor device
JPS5749236A (en) * 1980-07-11 1982-03-23 Philips Nv Method of producing semiconductor device
JPH0237091B2 (en) * 1980-07-11 1990-08-22 Fuiritsupusu Furuuiranpenfuaburiken Nv
JPS5924846A (en) * 1982-07-26 1984-02-08 エスヴィージー・リトグラフィー・システムズ・インコーポレイテッド Dry development for photoresist
JPS61142744A (en) * 1984-12-17 1986-06-30 Sony Corp Etching gas and etching method using said gas
JPS61214434A (en) * 1985-03-19 1986-09-24 Tokyo Denshi Kagaku Kk Method for removing organic film
JPS61267325A (en) * 1985-05-22 1986-11-26 Tokyo Denshi Kagaku Kk Removal of organic film
JPS62125627A (en) * 1985-11-26 1987-06-06 Tokyo Denshi Kagaku Kk Removing method for organic film
JPS62208636A (en) * 1986-02-14 1987-09-12 Fujitsu Ltd Process of peeling off resist
JPS62281331A (en) * 1986-05-29 1987-12-07 Fujitsu Ltd Etching method
JPH057862B2 (en) * 1986-05-29 1993-01-29 Fujitsu Ltd
JPS63260032A (en) * 1986-09-19 1988-10-27 Tokyo Ohka Kogyo Co Ltd Removal of organic film
JPH0291936A (en) * 1988-09-29 1990-03-30 Fujitsu Ltd Ashing device and ashing using same

Also Published As

Publication number Publication date
JPS6211493B2 (en) 1987-03-12

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