EP1825325A1 - Polymeres a faible indice de refraction utilises en tant que sous-couches dans des photoresists contenant du silicium - Google Patents

Polymeres a faible indice de refraction utilises en tant que sous-couches dans des photoresists contenant du silicium

Info

Publication number
EP1825325A1
EP1825325A1 EP05857596A EP05857596A EP1825325A1 EP 1825325 A1 EP1825325 A1 EP 1825325A1 EP 05857596 A EP05857596 A EP 05857596A EP 05857596 A EP05857596 A EP 05857596A EP 1825325 A1 EP1825325 A1 EP 1825325A1
Authority
EP
European Patent Office
Prior art keywords
composition
group
underlayer
polymer
moiety
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05857596A
Other languages
German (de)
English (en)
Other versions
EP1825325A4 (fr
Inventor
Wu-Song Huang
Sean Burns
Mahmoud Khojasteh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/013,971 external-priority patent/US7326523B2/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP1825325A1 publication Critical patent/EP1825325A1/fr
Publication of EP1825325A4 publication Critical patent/EP1825325A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094Multilayer resist systems, e.g. planarising layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Abstract

L’invention décrit une nouvelle composition de sous-couche qui fait preuve d’une résistance élevée à la gravure et de propriétés optiques améliorées. Ladite composition comprend un polymère de vinyle ou d’acrylate, par exemple un polymère méthacrylate, le polymère comprenant au moins un groupement naphtalène ou naphtol substitué ou non substitué, y compris un mélange de ces groupements. Des exemples du polymère de l’invention incluent : formules (I), (II), (III), (IV), dans lesquelles chaque R1 est indépendamment un groupement organique ou un halogène ; chaque A est indépendamment une liaison simple ou un groupement organique ; R2 est l’hydrogène ou un groupe méthyle ; enfin X, Y et Z sont chacun un entier de 0 à 7 et Y + Z est inférieur ou égal à /. Le groupement organique susmentionné peut être un hydrocarbure substitué ou non substitué choisi dans le groupe formé d'un alkyle linéaire ou ramifié, d’un alkyle halogéné linéaire ou ramifié, d’un aryle, d’un aryle halogéné, d’un alkyle cyclique, d’un alkyle cyclique halogéné et d’une quelconque de leurs combinaison. Les compositions sont appropriées pour former la sous-couche d’aplanissement dans un procédé lithographique multicouche, notamment tricouche.
EP05857596A 2004-12-16 2005-11-30 Polymeres a faible indice de refraction utilises en tant que sous-couches dans des photoresists contenant du silicium Withdrawn EP1825325A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/013,971 US7326523B2 (en) 2004-12-16 2004-12-16 Low refractive index polymers as underlayers for silicon-containing photoresists
US11/195,566 US7439302B2 (en) 2004-12-16 2005-08-02 Low refractive index polymers as underlayers for silicon-containing photoresists
PCT/US2005/043210 WO2006096221A1 (fr) 2004-12-16 2005-11-30 Polymeres a faible indice de refraction utilises en tant que sous-couches dans des photoresists contenant du silicium

Publications (2)

Publication Number Publication Date
EP1825325A1 true EP1825325A1 (fr) 2007-08-29
EP1825325A4 EP1825325A4 (fr) 2010-05-26

Family

ID=36953687

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05857596A Withdrawn EP1825325A4 (fr) 2004-12-16 2005-11-30 Polymeres a faible indice de refraction utilises en tant que sous-couches dans des photoresists contenant du silicium

Country Status (2)

Country Link
EP (1) EP1825325A4 (fr)
WO (1) WO2006096221A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9193678B2 (en) 2009-03-02 2015-11-24 Oxford Advanced Surfaces Ltd Chemical agents capable of forming covalent 3-D networks

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1109066A1 (fr) * 1999-12-16 2001-06-20 Fuji Photo Film Co., Ltd. Composition pour réserve chimiquement amplifiée de type négatif pour des faisceaux d'électrons ou des rayons X
US20020076641A1 (en) * 2000-09-07 2002-06-20 Samsung Electronics Co., Ltd. Photosensitive polymer having fused aromatic ring and photoresist composition containing the same
WO2003058345A2 (fr) * 2002-01-09 2003-07-17 Clariant International Ltd Revetement antireflet de fond photo-imageable de copie au negatif
US20040072420A1 (en) * 2002-10-15 2004-04-15 Brewer Science, Inc Anti-reflective compositions comprising triazine compounds

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0051320B1 (fr) * 1980-11-05 1986-06-04 Nec Corporation Composition de réserve négative sensible aux rayons
JPH06324494A (ja) * 1993-05-12 1994-11-25 Fujitsu Ltd パターン形成材料およびパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1109066A1 (fr) * 1999-12-16 2001-06-20 Fuji Photo Film Co., Ltd. Composition pour réserve chimiquement amplifiée de type négatif pour des faisceaux d'électrons ou des rayons X
US20020076641A1 (en) * 2000-09-07 2002-06-20 Samsung Electronics Co., Ltd. Photosensitive polymer having fused aromatic ring and photoresist composition containing the same
WO2003058345A2 (fr) * 2002-01-09 2003-07-17 Clariant International Ltd Revetement antireflet de fond photo-imageable de copie au negatif
US20040072420A1 (en) * 2002-10-15 2004-04-15 Brewer Science, Inc Anti-reflective compositions comprising triazine compounds

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2006096221A1 *

Also Published As

Publication number Publication date
EP1825325A4 (fr) 2010-05-26
WO2006096221A1 (fr) 2006-09-14

Similar Documents

Publication Publication Date Title
US7439302B2 (en) Low refractive index polymers as underlayers for silicon-containing photoresists
US6927015B2 (en) Underlayer compositions for multilayer lithographic processes
US8263321B2 (en) Polymer having antireflective properties and high carbon content, hardmask composition including the same, and process for forming a patterned material layer
US7276327B2 (en) Silicon-containing compositions for spin-on arc/hardmask materials
US7981594B2 (en) Hardmask composition having antirelective properties and method of patterning material on susbstrate using the same
US7659051B2 (en) Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer
US7655386B2 (en) Polymer having antireflective properties, hardmask composition including the same, process for forming a patterned material layer, and associated device
US8999624B2 (en) Developable bottom antireflective coating composition and pattern forming method using thereof
US20110117501A1 (en) Resist underlayer polymer, resist underlayer composition including the same, and method of patterning using the same
US7375172B2 (en) Underlayer compositions containing heterocyclic aromatic structures
KR20140144658A (ko) 하층막 재료 및 패턴 형성 방법
KR20140144657A (ko) 하층막 재료 및 패턴 형성 방법
JP2013156647A (ja) 反射防止コーティング組成物
TWI411628B (zh) 具有抗反射特性的底層組成物
US7638266B2 (en) Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer
KR100865684B1 (ko) 고 내에칭성 반사방지 하드마스크 조성물, 패턴화된 재료형상의 제조방법 및 그 제조방법으로 제조되는 반도체집적회로 디바이스
WO2006096221A1 (fr) Polymeres a faible indice de refraction utilises en tant que sous-couches dans des photoresists contenant du silicium
KR100836675B1 (ko) 반사방지 하드마스크 조성물, 이를 이용한 패턴화된 재료형상의 제조방법 및 반도체 집적회로 디바이스

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20070626

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

RIN1 Information on inventor provided before grant (corrected)

Inventor name: BURNS, SEAN

Inventor name: KHOJASTEH, MAHMOUD

Inventor name: HUANG, WU-SONG

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20100426

RIC1 Information provided on ipc code assigned before grant

Ipc: G03C 1/76 20060101ALI20100420BHEP

Ipc: G03F 7/09 20060101AFI20100420BHEP

17Q First examination report despatched

Effective date: 20111212

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20121005