DE112015005232A5 - Bauelement und verfahren zur herstellung eines bauelements - Google Patents

Bauelement und verfahren zur herstellung eines bauelements Download PDF

Info

Publication number
DE112015005232A5
DE112015005232A5 DE112015005232.1T DE112015005232T DE112015005232A5 DE 112015005232 A5 DE112015005232 A5 DE 112015005232A5 DE 112015005232 T DE112015005232 T DE 112015005232T DE 112015005232 A5 DE112015005232 A5 DE 112015005232A5
Authority
DE
Germany
Prior art keywords
component
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112015005232.1T
Other languages
English (en)
Inventor
Lutz Hoeppel
Norwin von Malm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112015005232A5 publication Critical patent/DE112015005232A5/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49586—Insulating layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE112015005232.1T 2014-11-19 2015-10-14 Bauelement und verfahren zur herstellung eines bauelements Pending DE112015005232A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014116935.2A DE102014116935A1 (de) 2014-11-19 2014-11-19 Bauelement und Verfahren zur Herstellung eines Bauelements
DE102014116935.2 2014-11-19
PCT/EP2015/073795 WO2016078837A1 (de) 2014-11-19 2015-10-14 Bauelement und verfahren zur herstellung eines bauelements

Publications (1)

Publication Number Publication Date
DE112015005232A5 true DE112015005232A5 (de) 2017-09-28

Family

ID=54325542

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102014116935.2A Withdrawn DE102014116935A1 (de) 2014-11-19 2014-11-19 Bauelement und Verfahren zur Herstellung eines Bauelements
DE112015005232.1T Pending DE112015005232A5 (de) 2014-11-19 2015-10-14 Bauelement und verfahren zur herstellung eines bauelements

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102014116935.2A Withdrawn DE102014116935A1 (de) 2014-11-19 2014-11-19 Bauelement und Verfahren zur Herstellung eines Bauelements

Country Status (6)

Country Link
US (1) US9985151B2 (de)
JP (1) JP6526809B2 (de)
KR (1) KR102373980B1 (de)
CN (1) CN107004746B (de)
DE (2) DE102014116935A1 (de)
WO (1) WO2016078837A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015105509A1 (de) 2015-04-10 2016-10-13 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015109755A1 (de) 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015111558B4 (de) * 2015-07-16 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102015114587A1 (de) * 2015-09-01 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
DE102015115722A1 (de) 2015-09-17 2017-03-23 Osram Opto Semiconductors Gmbh Träger für ein Bauelement, Bauelement und Verfahren zur Herstellung eines Trägers oder eines Bauelements
DE102015117198A1 (de) 2015-10-08 2017-04-13 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102017107198A1 (de) * 2017-04-04 2018-10-04 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchip und optoelektronischer Halbleiterchip
DE102018123930A1 (de) * 2018-09-27 2020-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit erstem und zweitem Kontaktelement und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
DE102018128692A1 (de) * 2018-11-15 2020-05-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit ersten Verbindungsbereichen und optoelektronische Vorrichtung
TW202036933A (zh) * 2019-03-22 2020-10-01 新世紀光電股份有限公司 紅光發光二極體及其製造方法
DE102020104372A1 (de) * 2020-01-15 2021-07-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102020200621A1 (de) 2020-01-21 2021-07-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips
DE102020116871A1 (de) 2020-06-26 2021-12-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer halbleiterchip

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100365834C (zh) * 2004-08-02 2008-01-30 晶元光电股份有限公司 具有热通道黏结层的发光二极管及发光二极管阵列
DE102007019775A1 (de) 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
JP4875185B2 (ja) * 2010-06-07 2012-02-15 株式会社東芝 光半導体装置
DE102010025320B4 (de) * 2010-06-28 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102010027679A1 (de) * 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP5989420B2 (ja) * 2012-06-28 2016-09-07 株式会社東芝 半導体発光装置
DE102012106953A1 (de) 2012-07-30 2014-01-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102012217533A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
KR102191933B1 (ko) 2013-02-19 2020-12-18 루미리즈 홀딩 비.브이. 다층 구조체에 의해 형성되는 발광 다이 컴포넌트
KR102059402B1 (ko) * 2013-04-15 2019-12-26 삼성전자주식회사 전자소자 패키지 및 이에 사용되는 패키지 기판
DE102013109316A1 (de) * 2013-05-29 2014-12-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102014100773A1 (de) * 2014-01-23 2015-07-23 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102014107123A1 (de) * 2014-05-20 2015-11-26 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips sowie optoelektronischer Halbleiterchip

Also Published As

Publication number Publication date
US9985151B2 (en) 2018-05-29
DE102014116935A1 (de) 2016-05-19
KR20170088369A (ko) 2017-08-01
CN107004746B (zh) 2019-12-24
KR102373980B1 (ko) 2022-03-11
WO2016078837A1 (de) 2016-05-26
JP2017535082A (ja) 2017-11-24
JP6526809B2 (ja) 2019-06-05
CN107004746A (zh) 2017-08-01
US20170330981A1 (en) 2017-11-16

Similar Documents

Publication Publication Date Title
DE112016002417A5 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE112015005232A5 (de) Bauelement und verfahren zur herstellung eines bauelements
DE112015005964A5 (de) Bauelement und Verfahren zur Herstellung eines Bauelements
DE112015004073A5 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE112015005495A5 (de) Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE112016004575A5 (de) Halbleiterlaser und Verfahren zur Herstellung eines Halbleiterlasers
DE112015001999A5 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE112016002499A5 (de) Verfahren und Vorrichtung zur Herstellung eines Werkstücks
DE112014005953A5 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE112017002058A5 (de) Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE112015003591A5 (de) Elektronisches Bauelement, optoelektronisches Bauelement, Bauelementeanordnung und Verfahren zur Herstellung eines elektronischen Bauelements
DE112015004631A5 (de) Laserbauelement und Verfahren zu seiner Herstellung
DE112017000332A5 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE112015005127A5 (de) Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102014102565A8 (de) Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE112016001670B8 (de) Bauelement und Verfahren zur Herstellung eines Bauelements
DE112017006309A5 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE112015002255A5 (de) Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zum Herstellen eines oberflächenmontierbaren optoelektronischen Bauelements
DE112014001948A5 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE112015003629A5 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102015216321A8 (de) Verfahren zur Herstellung eines Kolbens
DE112015000535A5 (de) Lichtemittierende Anordnung und Verfahren zur Herstellung einer lichtemittierenden Anordnung
DE112015002211A5 (de) Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zum Herstellen eines oberflächenmontierbaren optoelektronischen Bauelements
DE112015005016A5 (de) Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE112015003463A5 (de) Halbleiterbauelement, Beleuchtungsvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication